Mounting method

Abstract

To provide a mounting method capable of easily managing particles without greatly changing a mounting process from a cutting process to a bonding process.SOLUTION: A preparing step S1 of preparing a laminated body 10 in which the first protection component 12 is laminated as an outermost layer, a dicing step S2 of dicing the laminated body 10 into a chip 14, a first removing step S3 of removing the first protection component 12 from the chip 14, an arranging step S3 of arranging the chip 14 after the first removing step S6 so that the second protection component 13 side faces a bonding head 320, a heating step S7 of heating at least a part of the second protection component 13, a holding step S8 of holding the chip 14 by the bonding head 320 via the heated second protection component 13, and a bonding step S9 of bonding the chip 14 to the base substrate 200 by the bonding head 320.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a packaging method. [Background technology]

[0002] In conventional semiconductor packaging processes, the height of bumps is allowed for by inserting an encapsulating material between the chip and wafer. However, in recent years, demand for higher density packaging has increased, creating a demand for direct bonding methods that use die-to-wafer (D2W) stacking to directly bond device chips together without using bumps. Direct bonding methods use plasma or other methods to activate the chip surface that will be the bonding surface, exposing functional groups that then bond with each other. Therefore, direct bonding methods do not require the height of bumps, making it possible to mount bonded objects more firmly, without gaps, and at a higher density.

[0003] The direct bonding method requires the activated surface to have extremely high flatness and high cleanliness. In the D2W process, chips are stacked one by one multiple times, so they must be held and bonded with a bonding tool. The D2W process inevitably involves contact with the chip surface, whether held with a bonding tool or by other methods. Therefore, even with increased cleanliness in the working atmosphere, it is difficult to avoid particle adhesion to the chip surface. Furthermore, although the chip surface is not an activated surface, it is the base for the next layering, and particles, especially inorganic ones, cannot be easily removed with water or chemicals. Mechanical cleaning is another cleaning method, but it is not suitable due to the risk of chip cracking or peeling.

[0004] The following Patent Document 1 discloses a processing method for coating the exposed surface of a chip with a water-soluble protective film in order to prevent adhesion of particles in direct bonding technology. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent Publication No. 2021-190557 Summary of the Invention [Problem to be solved by the invention]

[0006] The processing method of Patent Document 1 involves applying a liquid material to the exposed surface of the chip and forming a water-soluble protective film using a spinner table. As a result, the processing method of Patent Document 1 requires a separate process for forming a water-soluble protective film in the mounting process from the dicing process to the bonding process, which significantly changes the process.

[0007] Furthermore, because the processing method of Patent Document 1 uses a liquid material, it is difficult to form a water-soluble protective film with a uniform thickness, which can lead to pick-up errors with the bonding tool.In addition, the processing method of Patent Document 1 requires a heat history in a curing process or the like to form a film after applying the liquid material, which increases the number of processes.

[0008] Furthermore, the processing method of Patent Document 1 forms a water-soluble protective film only on the exposed surfaces of the chips, and does not take into consideration the adhesion of particles to the non-exposed surfaces of the chips. Therefore, with the processing method of Patent Document 1, if the surface on which the water-soluble protective film is not formed is used as the bonding surface with other chips during multi-layer stacking, the processing method of Patent Document 1 may be affected by particles and may not be able to bond properly.

[0009] The present invention has been made in consideration of the above-mentioned problems, and specifically, an object of the present invention is to provide a mounting method that makes it easy to manage particles without significantly changing the mounting process from the cutting step to the bonding step. [Means for solving the problem]

[0010] The above object can be achieved by any one of the following means (1) to (12).

[0011] (1) A mounting method carried out by a mounting device having at least a bonding head, the mounting method including: a preparation step of preparing a laminate including at least a base material, a first protective member, and a second protective member, stacked so that the first protective member is the outermost layer; a cutting step of cutting the laminate into chips; a first removal step of removing the first protective member from the chips; a heating step of heating at least a portion of the second protective member via the bonding head or from near the bonding head; a holding step of the bonding head holding the chip via the second protective member after heating; and a bonding step of bonding the chip to a base substrate by the bonding head.

[0012] (2) The mounting method according to (1) above, further comprising a second removal step of removing the second protective member from the chip after the bonding step.

[0013] (3) The mounting method according to (1) or (2) above, wherein the heating step heats at least a part of the second protection member by either laser heating or lamp heating.

[0014] (4) The mounting method according to any one of (1) to (3) above, wherein the holding surface of the bonding head is a smooth surface.

[0015] (5) A mounting method described in any one of (1) to (4) above, wherein the first protective member is a water-soluble sheet material, and the first removal step removes the first protective member from the chip by washing with water.

[0016] (6) The mounting method described in (2) above, wherein the second protective member is a sheet material that becomes water-soluble when irradiated with active energy rays, and further includes an irradiation step of irradiating the second protective member with the active energy rays to change the second protective member to be water-soluble, and the second removal step is to remove the second protective member from the chip by washing with water after the irradiation step.

[0017] (7) The mounting method according to any one of (1) to (6) above, wherein the second protective member generates bending stress when irradiated with active energy rays.

[0018] (8) The mounting method described in (2) above, wherein the first protective member is removable with water at a first temperature, the second protective member is removable with water at a second temperature higher than the first temperature, the first removal step is removing the first protective member from the surface of the chip with water at the first temperature, and the second removal step is removing the second protective member from the chip with water at the second temperature after the bonding step.

[0019] (9) The mounting method according to any one of (1) to (8) above, wherein the base material is a semiconductor chip or a wafer that will become a substrate.

[0020] (10) The mounting method described in any one of (1) to (9) above, further comprising an arrangement step of arranging the chip after the first removal step so that the second protective member side faces the bonding head.

[0021] (11) A mounting method according to any one of (1) to (10) above, wherein the first protective member is disposed on a first surface that is the upper surface of the substrate, and the second protective member is disposed on a second surface that is the lower surface of the substrate.

[0022] (12) A mounting method described in any one of (1) to (10) above, wherein the second protective member is placed on a first surface that is the upper surface of the base material, and the first protective member is placed stacked on the second protective member. [Effects of the Invention]

[0023] According to the present invention, particle management becomes easy without making major changes to the mounting process from the cutting step to the bonding step. [Brief explanation of the drawings]

[0024] [Figure 1]1 is a flowchart of a mounting method (mounting method A) according to a first embodiment of the present invention. [Figure 2A] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 2B] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 2C] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 2D] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 2E] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 2F] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 2G] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 2H] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 2I] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 2J] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 2K] 1A to 1C are cross-sectional schematic diagrams showing the steps of mounting method A. [Figure 3] 10 is a flowchart of a mounting method (mounting method B) according to a second embodiment of the present invention. [Figure 4A] 10A to 10C are cross-sectional views showing the steps of mounting method B in order. [Figure 4B] 10A to 10C are cross-sectional views showing the steps of mounting method B in order. [Figure 4C] 10A to 10C are cross-sectional views showing the steps of mounting method B in order. [Figure 4D] 10A to 10C are cross-sectional views showing the steps of mounting method B in order. [Figure 4E] 10A to 10C are cross-sectional views showing the steps of mounting method B in order. [Figure 4F] 10A to 10C are cross-sectional views showing the steps of mounting method B in order. [Figure 4G] 10A to 10C are cross-sectional views showing the steps of mounting method B in order. [Figure 4H]10A to 10C are cross-sectional views showing the steps of mounting method B in order. [Figure 4I] 10A to 10C are cross-sectional views showing the steps of mounting method B in order. [Figure 4J] 10A to 10C are cross-sectional views showing the steps of mounting method B in order. [Figure 5] 10 is a flowchart of a mounting method (mounting method C) according to a third embodiment of the present invention. [Figure 6A] 10A to 10C are cross-sectional views illustrating the steps of a mounting method C. [Figure 6B] 10A to 10C are cross-sectional views illustrating the steps of a mounting method C. [Figure 6C] 10A to 10C are cross-sectional views illustrating the steps of a mounting method C. [Figure 6D] 10A to 10C are cross-sectional views illustrating the steps of a mounting method C. [Figure 6E] 10A to 10C are cross-sectional views illustrating the steps of a mounting method C. [Figure 6F] 10A to 10C are cross-sectional views illustrating the steps of a mounting method C. [Figure 6G] 10A to 10C are cross-sectional views illustrating the steps of a mounting method C. [Figure 6H] 10A to 10C are cross-sectional views illustrating the steps of a mounting method C. [Figure 6I] 10A to 10C are cross-sectional views illustrating the steps of a mounting method C. [Figure 6J] 10A to 10C are cross-sectional views illustrating the steps of a mounting method C. [Figure 7A] 10A and 10B are schematic cross-sectional views showing a modified example of the mounting method according to the present invention. [Figure 7B] 10A and 10B are schematic cross-sectional views showing a modified example of the mounting method according to the present invention. [Figure 7C] 10A and 10B are schematic cross-sectional views showing a modified example of the mounting method according to the present invention. [Figure 7D] 10A and 10B are schematic cross-sectional views showing a modified example of the mounting method according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0025] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience. Meanwhile, the embodiments described below are merely examples, and various modifications are possible from such embodiments.

[0026] Hereinafter, the terms "upper" and "above" may include not only what is directly above in contact with something, but also what is above without contact. Similarly, the terms "lower" and "below" may include not only what is directly below in contact with something, but also what is below without contact.

[0027] The singular expression includes the plural expression unless the context clearly dictates otherwise. Furthermore, when a part "includes," "comprises," or "has" a certain element, it does not mean that it excludes other elements, but that it may further include other elements, unless otherwise specified to the contrary.

[0028] Unless explicitly stated or stated to the contrary, steps constituting a method may be performed in any suitable order, and are not necessarily limited to the order of the steps described. The use of any examples or exemplary terms is merely for the purpose of illustrating the technical idea, and the scope of the invention is not limited by the examples or exemplary terms, except as limited by the scope of the claims.

[0029] In the following description, when ordinal numbers such as "first" and "second" are used, unless otherwise specified, they are used for convenience and do not stipulate any particular order.

[0030] A mounting method according to a first embodiment of the present invention will be described. The mounting method according to the first embodiment (hereinafter referred to as "mounting method A") is a method applied to a mounting apparatus 300 that cuts a substrate 11 such as a wafer to be processed into device components such as semiconductor chips and substrates into chips, mounts each chip 14 on another base substrate 200, and stacks the chips 14 in multiple layers.

[0031] As shown in any one of FIGS. 2B to 2H , the mounting apparatus 300 used in mounting method A includes a pickup tool 310 that picks up the chip 14 from the dicing tape 100, a bonding head 320 having a holding surface 321 that holds the chip 14 picked up by the pickup tool 310, a cutting unit 330 that cuts the laminate 10, a cleaning unit 340 that cleans the laminate 10 and the chip 14, an irradiation unit 350 that irradiates the laminate 10 with active energy rays, a surface activation unit 360 that activates the first surface 14a of the chip 14, and a heating unit 370 that heats at least a portion of the second protective member 13 of the chip 14. The mounting apparatus 300 may include all of these components, or some of the components may be separate from the mounting apparatus. The mounting apparatus 300 may also include a bonding stage (not shown), and the base substrate 200 may be held on the bonding stage.

[0032] 1, the mounting method A of the first embodiment includes a preparation step S1, a cutting step S2, a first removal step S3, an irradiation step S4, a first surface activation step S5, a placement step S6, a heating step S7, a holding step S8, a bonding step S9, a second removal step S10, and a second surface activation step S11. Note that the mounting method A may include other steps. Furthermore, in the mounting method A, the first surface activation step S5, the second removal step S10, and the second surface activation step S11 are optional.

[0033] In the preparation step S1, as shown in FIG. 2A, a laminate 10 is prepared which has a laminate structure including at least a substrate 11, a first protective member 12, and a second protective member 13, with the first protective member 12 being the outermost layer.

[0034] As shown in Fig. 2A, the laminate 10 has a first protective member 12 disposed on one surface of a base material 11 and a second protective member 13 disposed on the other surface. In the laminate 10, the first protective member 12 is located as the outermost layer. In Fig. 1, the first protective member 12 is disposed on a first surface 11a which is the upper surface of the base material 11, and the second protective member 13 is disposed on a second surface 11b which is the lower surface of the base material 11. The laminate 10 is attached and fixed to a dicing tape 100 which is fixed to a dicing frame 110.

[0035] The substrate 11 is a wafer that will become a semiconductor chip or substrate. The constituent material of the wafer is not particularly limited as long as it is a known device material that can be used in semiconductor devices, such as metal or resin. The substrate 11 is cut and then expanded in the cutting step S2, and divided into a plurality of chips 14.

[0036] The first protective member 12 protects the first surface 11a of the substrate 11 in the cutting step S2. The first protective member 12 is removed in the first removal step S3. The first protective member 12 is made of a material that can be removed with a cleaning agent such as water or alcohol. Considering the ease of handling the cleaning agent and the effect on the chip 14, the first protective member 12 is preferably made of a water-soluble material that can be washed with water. Considering the ease of handling, such as placement on the substrate 11, the first protective member 12 is preferably a sheet-shaped member. However, the first protective member 12 may also be made of a film member formed by applying a liquid material to the substrate 11 and curing it. When plasma dicing is performed in the cutting step S2, the first protective member 12 preferably has a thickness of 50 μm or more to ensure a selectivity for plasma activation.

[0037] The second protective member 13 protects the second surface 11b of the substrate 11. The second protective member 13 is a member that becomes water-soluble when irradiated with active energy rays. Considering ease of handling, it is preferable to use a sheet-shaped member for the second protective member 13. The active energy rays irradiated to the second protective member 13 include not only visible light and electromagnetic waves with wavelengths in the invisible range, such as ultraviolet rays and X-rays, but also radiation, which collectively refers to particle rays such as electron beams and alpha rays. The second protective member 13 is not particularly limited as long as it is a sheet material formed from a material that becomes water-soluble when irradiated with active energy rays. For example, the surface protection sheet disclosed in International Publication No. 2023 / 195445 can be suitably used as the second protective member 13. It is preferable to attach the second protective member 13 to the dicing tape 100 beforehand when forming the laminate 10.

[0038] The laminate 10 can be formed by adhering a first protective member 12 to a base material 11, and then adhering this to a second protective member 13 placed on a dicing tape 100.

[0039] In the cutting step S2, as shown in FIG. 2B, a cutting unit 330 is driven to cut the laminate 10 into chips 14 of a predetermined size. In the cutting step S2, a cutting method can be appropriately determined depending on the substrate 11 to be cut. As the cutting method, a blade dicing method, a laser ablation method, a plasma dicing method, or the like can be appropriately selected. In the case of the plasma dicing method, dicing is performed by irradiating plasma in a state where a mask or the like is removed by laser grooving.

[0040] As shown in FIG. 2C, in the first removal step S3, the cleaning unit 340 is driven to remove the first protective member 12 disposed on the first surface 10a of the substrate 11 cut in the cutting step S2. In the first removal step S3, if the first protective member 12 is made of a water-soluble material, washing with water is performed. This removes the first protective member 12 from the first surface 10a of the substrate 11 and particles adhering to the surrounding area. After the first removal step S3 is completed, the dicing tape 100 of the laminate 10 is expanded, and the substrate 11 is divided into individual chips 14.

[0041] 2D, in the irradiation step S4, the irradiation unit 350 is driven to irradiate the dicing tape 100 and the second protective member 13 with active energy rays. The adhesive strength of the dicing tape 100 is reduced by the irradiation of the active energy rays, so that the individual chips 14 can be easily peeled off. Furthermore, in the irradiation step S4, the second protective member 13 is also irradiated with active energy rays, so that the second protective member 13 becomes water-soluble.

[0042] As shown in FIG. 2E, the first surface activation step S5 involves driving the surface activation unit 360 to activate at least a portion of the surface of the first surface 14a of the chip 14 (surface activation process). In the first surface activation step S5, the surface activation process is preferably performed on the entire first surface 14a of the chip 14 to ensure proper bonding with the base substrate 200 or the second surface 14b of the chip 14 to be laminated. Examples of surface activation processes include plasma treatment, corona treatment, and ultraviolet treatment. These may be used alone or in combination of two or more. Among these, plasma treatment is preferred. The plasma treatment may include a process in which ions and electrons released by electrical discharge sever chemical bonds between molecules on the first surface 14a of the chip 14 to generate hydrophilic functional groups such as OH (hydroxyl groups).

[0043] 2F, in the placement step S6, chips 14 picked up from dicing tape 100 by pickup tool 310 are placed so that the second protective member 13 faces the bonding head 320. Each chip 14 is picked up from dicing tape 100 by pickup tool 310 in a non-contact manner, rotated 180°, and placed in a position facing holding surface 321 of bonding head 320.

[0044] 2G, in the heating step S7, the heating unit 370 is driven to heat at least a portion of the second protective member 13 via the bonding head 320 or in a state where the second protective member 13 is picked up by the pickup tool 310 from near the bonding head 320. In the heating step S7, the second protective member 13 is heated to increase its adhesiveness, thereby improving the holding ability of the second protective member 13 to the holding surface 321 of the bonding head 320.

[0045] The heating unit 370 heats at least a portion of the second protective member 13. The heating unit 370 may be provided directly on the bonding head 320 or may be located near the bonding head 320. Any device capable of heating the second protective member 13 may be used, and examples thereof include a heating device such as a lamp or laser irradiator. If the heating unit 370 is configured as a laser irradiator, the heating area of ​​the second protective member 13 can be limited, thereby allowing for appropriate control of the adhesiveness and adhesive area of ​​the second protective member 13. If the heating unit 370 heats only the outer periphery of the chip 14, excessive adhesiveness is not developed, allowing for appropriate adhesion to the bonding head 320. Therefore, the chip 14 does not peel off until the bonding step S9 and can be easily peeled off from the bonding head 320 for bonding.

[0046] In the holding step S8, as shown in FIG. 2H, the heated chip 14 is attached and held on the holding surface 321 of the bonding head 320. The adhesiveness of the second protective member 13, which serves as the held portion, has been increased by the heating step S7, so that the chip 14 is held without peeling off from the holding surface 321. The holding surface 321 is preferably a smooth surface so that no suction marks or the like are left on the first surface 14a, which serves as the held surface of the chip 14 relative to the bonding head 320. Note that the holding step S8 and the heating step S7 may be performed in either order, or they may be performed simultaneously. However, from the viewpoint of preventing peeling off from the holding surface 321, it is preferable that the heating step S7 be performed before the holding step S8.

[0047] In the bonding step S9, as shown in FIG. 2I, the chip 14 held by the bonding head 320 is bonded to the base substrate 200. Since the first surface 14a of the chip 14 has been activated in the first surface activation step S5 described above, the chip 14 is firmly bonded to the base substrate 200. After bonding, the first surface 14a of the chip 14 faces the base substrate 200, and the second surface 14b faces the opposite side.

[0048] 2J, in the second removal step S10, the cleaning unit 340 is driven to clean the chip 14 bonded to the base substrate 200. Since the second protective member 13 has been rendered water-soluble in the above-described irradiation step S4, particles adhering to the second protective member 13 and its surroundings can be removed by washing with water.

[0049] 2K, the second surface activation step S11 activates the second surface 14b of the chip 14 from which the second protective member 13 has been removed by driving the surface activation unit 360. This allows the second surface 14b of the chip 14 to be well bonded to the first surface 14a of the chip 14 to be stacked in the next stacking cycle.

[0050] Thereafter, the mounting apparatus 300 sequentially repeats the placement step S6 to the second surface activation step S11 shown in FIGS. 2F to 2K to stack a predetermined number of chips 14 and perform the mounting process. That is, the mounting apparatus 300 determines whether or not there are chips 14 to be stacked in the next stacking cycle (S12). If there are chips 14 to be stacked in the next stacking cycle (S12-Yes), the mounting apparatus 300 returns to S6 again. On the other hand, if there are no chips 14 to be stacked in the next stacking cycle (ST12-No), the processing ends.

[0051] Next, a mounting method according to a second embodiment of the present invention will be described. In the mounting method according to the second embodiment described below, the same components as those in the above-described embodiment will be assigned the same reference numerals, and their description will be omitted. Furthermore, the components not specifically mentioned can be configured in the same way as those in the above-described embodiment.

[0052] A mounting method according to a second embodiment of the present invention (hereinafter referred to as "mounting method B") differs from the above-described embodiments in that face-down bonding is performed.

[0053] 3, the mounting method B of the second embodiment includes a preparation step S21, a cutting step S22, a first removal step S23, an irradiation step S24, a heating step S25, a holding step S26, a first surface activation step S27, a bonding step S28, a second removal step S29, and a second surface activation step S30. Note that the mounting method B may include other steps. In the mounting method B, the first surface activation step S27, the second removal step S29, and the second surface activation step S30 are optional.

[0054] The mounting apparatus 300A that performs the mounting process by the mounting method B does not perform the placement step S6 of the mounting method A, and therefore does not require the pickup tool 310.

[0055] In the preparation step S21, as shown in FIG. 4A, a laminate 10 is prepared, which has a laminate structure including at least a substrate 11, a first protective member 12, and a second protective member 13, with the first protective member 12 being the outermost layer.

[0056] As shown in FIG. 4A, the laminate 10 prepared in the preparation step S21 has a first protective member 12 and a second protective member 13 arranged on one surface of the base material 11, with the first protective member 12 being the outermost layer. In FIG. 4A, the second protective member 13 is arranged on a first surface 11a, which is the upper surface of the base material 11, and the first protective member 12 is arranged by being laminated on the second protective member 13. The laminate 10 is attached and fixed to a dicing tape 100. The laminate 10 can be formed by attaching the first protective member 12 and the second protective member 13, attaching this to the base material 11, and then placing it on the dicing tape 100.

[0057] In the cutting step S22, as shown in FIG. 4B, the cutting unit 330 is driven to cut the laminate 10 into chips 14 of a predetermined size.

[0058] 4C, in the first removing step S23, the cleaning unit 340 is driven to remove the first protective member 12 arranged on the outermost layer of the base material 11 cut in the cutting step S22. After the first removing step S23 is completed, the dicing tape 100 of the laminate 10 is expanded, and the base material 11 is divided into individual chips 14.

[0059] 4D, the irradiation step S24 involves driving the irradiation unit 350 to irradiate the dicing tape 100 and the second protective member 13 with active energy rays. The irradiation unit 350 irradiates both the dicing tape 100 and the second protective member 13 with active energy rays.

[0060] In the heating step S25, the heating unit 370 is driven to heat at least a portion of the second protection member 13, as shown in FIG. 4E.

[0061] In the holding step S26, the heated chip 14 is attached to and held on the holding surface 321 of the bonding head 320, as shown in FIG. 4F.

[0062] In the first surface activation step S27, as shown in FIG. 4G, the surface activation unit 360 is driven to perform a process (surface activation process) for activating at least a part of the surface of the first face 14a of the chip 14.

[0063] In the bonding step S28, as shown in FIG. 4H, the first surface 14a of the chip 14 held by the bonding head 320 is bonded to the base substrate 200 as a joining surface.

[0064] 4I, in the second removal step S29, the cleaning unit 340 is driven to clean the chip 14 bonded to the base substrate 200. As a result, particles adhering to the second protective member 13 and the periphery of the chip 14 are removed.

[0065] In the second surface activation step S30, as shown in FIG. 4J, the surface activation unit 360 is driven to activate the second surface 14b of the chip 14 from which the second protective member 13 has been removed.

[0066] Thereafter, the mounting apparatus 300A sequentially repeats the heating step S25 to the second surface activation step S30 shown in FIGS. 4E to 4J to stack a predetermined number of chips 14 and perform the mounting process. That is, the mounting apparatus 300A determines whether or not there are chips 14 to be stacked in the next stacking cycle (S31). If there are chips 14 to be stacked in the next stacking cycle (S31-Yes), the mounting apparatus 300A returns to S25 again. On the other hand, if there are no chips 14 to be stacked in the next stacking cycle (ST31-No), the processing ends.

[0067] Next, a mounting method according to a third embodiment of the present invention will be described. In the mounting method according to the third embodiment described below, the same components as those in the above-described embodiment will be assigned the same reference numerals, and their description will be omitted. Furthermore, the components not specifically mentioned can be configured in the same way as those in the above-described embodiment.

[0068] The mounting method according to the third embodiment of the present invention (hereinafter referred to as "mounting method C") differs from the above-described embodiments in the characteristics of the first protective member 12 and the second protective member 13 and the method of removing the first protective member 12 and the second protective member 13.

[0069] 5, the mounting method C of the third embodiment includes a preparation step S41, a cutting step S42, a first removal step S43, a first surface activation step S44, a placement step S45, a heating step S46, a holding step S47, a bonding step S48, a second removal step S49, and a second surface activation step S50. Note that the mounting method C may include other steps. In addition, in the mounting method B, the first surface activation step S44, the second removal step S49, and the second surface activation step S50 are optional.

[0070] In the mounting apparatus 300B that performs the mounting process by the mounting method C, the cleaning section 340 that performs the first removal step S43 and the second removal step S49 has a function of adjusting the water temperature during cleaning.

[0071] The first protective member 12 and the second protective member 13 used in mounting method C are each water-soluble and dissolve at a predetermined dissolution temperature. In this embodiment, the first protective member 12 can be formed of a material that dissolves at, for example, 50°C or less, and the second protective member 13 can be formed of a material that dissolves at, for example, 50°C or more. Therefore, in mounting method C, in the first removal step S43, only the first protective member 12 is removed using water at, for example, 50°C or less, and in the second removal step S49, the second protective member 13 is removed using water at, for example, 50°C or more.

[0072] In mounting method C, it is sufficient that only first protective member 12 is dissolved and removed in first removal step S43, and second protective member 13 is dissolved and removed in second removal step S49. Therefore, the dissolving temperature of first protective member 12, the dissolving temperature of second protective member 13, the temperature of the water used in first removal step S43, and the temperature of the water used in second removal step S49 are not particularly limited as long as they are temperatures at which the above-mentioned removal treatment can be performed.

[0073] As shown in FIG. 6A, the preparation step S41 involves preparing a laminate 10 having a laminate structure including at least a substrate 11, a first protective member 12, and a second protective member 13, with the first protective member 12 being the outermost layer.

[0074] 6A, the laminate 10 is formed by placing the second protective member 13 on a first surface 11a, which is the upper surface of the base material 11, and placing the first protective member 12 on a second surface 11b of the base material 11. The laminate 10 can be formed by placing it on a dicing tape 100.

[0075] In the cutting step S42, as shown in FIG. 6B, the cutting unit 330 is driven to cut the laminate 10 into chips 14 of a predetermined size.

[0076] 6C, in the first removal step S43, the cleaning unit 340 is driven to remove the first protective member 12 arranged on the outermost layer of the base material 11 cut in the cutting step S22. The first removal step S43 uses water (W1) at 50°C or less, which is capable of removing only the first protective member 12. This removes only the first protective member 12 on the chips 14. When the first removal step S43 is completed, the dicing tape 100 of the laminate 10 is expanded, and the base material 11 is divided into individual chips 14.

[0077] In the first surface activation step S44, as shown in FIG. 6D, the surface activation unit 360 is driven to perform a process (surface activation process) for activating at least a part of the surface of the first face 14a of the chip 14.

[0078] In the placement step S45, the chip 14 picked up from the dicing tape 100 by the pickup tool 310 is placed so that the second protection member 13 side faces the bonding head 320, as shown in FIG. 6E.

[0079] In the heating step S46, the heating unit 370 is driven to heat at least a portion of the second protection member 13, as shown in FIG. 6F.

[0080] In the holding step S47, the heated chip 14 is attached to and held on the holding surface 321 of the bonding head 320, as shown in FIG. 6G.

[0081] In the bonding step S48, as shown in FIG. 6H, the first surface 14a of the chip 14 held by the bonding head 320 is bonded to the base substrate 200 as a joining surface.

[0082] 6I, the second removal step S49 involves driving the cleaning unit 340 to clean the chip 14 bonded to the base substrate 200. The second removal step S49 uses water (W2) at 50°C or higher, which is capable of removing the second protective member 13. As a result, the second protective member 13 on the chip 14 is removed.

[0083] In the second surface activation step S50, as shown in FIG. 6J, the surface activation unit 360 is driven to activate the second surface 14b of the chip 14 from which the second protective member 13 has been removed.

[0084] Thereafter, the mounting device 300B sequentially repeats the placement step S45 to the second surface activation step S50 shown in FIGS. 6E to 6J to stack a predetermined number of chips 14 and perform the mounting process. That is, the mounting device 300B determines whether or not there are chips 14 to be stacked in the next stacking cycle (S51). If there are chips 14 to be stacked in the next stacking cycle (S51-Yes), the mounting device 300B returns to S45 again. On the other hand, if there are no chips 14 to be stacked in the next stacking cycle (ST51-No), the processing ends.

[0085] Next, a modified example of the mounting method according to this embodiment will be described. The following modified example will be described using the mounting method A using the above-described mounting device 300 as an example, but it can also be implemented by appropriately incorporating it into mounting method B or mounting method C.

[0086] As a modified example of the mounting method, second protective member 13 can be configured to not only become water-soluble when irradiated with active energy rays, but also to generate bending stress that bends the entire chip 14 in a predetermined direction when it expands and contracts.

[0087] As shown in FIG. 7A, the second protective member 30 of the modified example has a bending stress that bends the entire chip 14 so that the first surface 14a of the chip 14 is concave and the second surface 14b is convex. The dashed arrow in FIG. 7A indicates the direction of the bending stress that bends the chip 14. The second protective member 30 can be configured so that bending stress is generated by irradiation with active energy rays. For example, the second protective member 13 does not generate bending stress that deforms the chip 14 during the preparation step S1 of mounting method A, but generates bending stress after the irradiation step S4. Note that the second protective member 30 may previously generate bending stress that bends the chip 14 in a predetermined direction.

[0088] As shown in FIG. 7A, after the irradiation step S4, the second protective member 13 is placed on the dicing tape 100, and therefore the bending stress is suppressed by the adhesive force of the dicing tape 100. Therefore, the chip 14 does not bend and maintains a flat shape. When the chip 14 is picked up by the pickup tool 310, the second protective member 13 is released from the adhesive force of the dicing tape 100. As a result, the chip 14 is entirely curved and deformed by the bending stress of the second protective member 30 so that the first surface 14a becomes concave and the second surface 14b becomes convex.

[0089] 7B, the holding surface 321 of the bonding head 320 has a convex shape that follows the curved shape of the chip 14. Therefore, when the bonding head 320 is transferred from the pickup tool 310 to the bonding head 320, the bonding head 320 can hold the chip 14 along the shape of the chip 14 in the holding step S8, so there is no need to worry about the chip 14 falling off.

[0090] As shown in FIG. 7C , when the chip 14 is bonded to the base substrate 200 in the bonding step S9, the bending stress of the second protective member 13 acts to press the first surface 14a of the chip 14 against the base substrate 200. At this time, the bending stress of the second protective member 30 presses the chip 14 against the base substrate 200 from the center of the first surface 14a toward the outer periphery. In addition to the pressing force from the bonding head 320, the bending stress of the second protective member 30 also causes the chip 14 to spontaneously bond to the base substrate 200 in the bonding step S9. This allows the mounting method of the modified example to effectively prevent bonding failure of the chip 14 in the bonding step S9. As shown in FIG. 7D , the chip 14 is bonded to the base substrate 200 after the bonding process by the bonding head 320.

[0091] Furthermore, in the mounting method of the modified example, the bending stress of the second protective member 13 causes the chip 14 to bend and deform so as to be convex toward the first surface 14a, which is the bonding surface with the base substrate 200. Therefore, the chip 14 is gradually bonded to the base substrate 200 from the center toward the outer periphery. This reduces the occurrence of voids between the chip 14 and the base substrate 200.

[0092] After the bonding process, second protective member 13 is removed in a second removal step S10. This removes the bending stress from second protective member 13 from chip 14. After this, chip 14 is no longer subjected to the bending stress of second protective member 30 and maintains its normal flat plate shape.

[0093] As other modified examples, the above-described mounting methods A to C can also be imparted with the following functions. First protective member 12 can be configured to have the function of imparting heat dissipation properties to chip 14. First protective member 12 can be configured to have the function of imparting hydrophilicity or water repellency to chip 14. By imparting the above-described functions such as heat dissipation properties, hydrophilicity, and water repellency to mounting methods A to C, it is expected that the effects of reducing thermal damage to chip 14 through reflow before peeling and improving reliability can be achieved by matching the stacked chip 14 and sealant to each other.

[0094] Furthermore, in the above-described mounting methods A to C, the first protective member 12 is formed on the outermost layer of the laminate 10. However, in the mounting methods A to C, the laminate 10 may not be configured with the first protective member 12 on the outermost layer. In this case, the first removing step S3 after the cutting step S2 can be omitted.

[0095] As described above, the mounting method of this embodiment includes a preparation step S1 of preparing a laminate 10 including at least a substrate 11, a first protective member 12, and a second protective member 13, stacked so that the first protective member 12 is the outermost layer; a cutting step S2 of cutting the laminate 10 to process it into chips 14; a first removal step S3 of removing the first protective member 12 from the chips 14; an arrangement step S6 of arranging the chips 14 after the first removal step S3 so that the second protective member 13 side faces the bonding head 320; a heating step S7 of heating at least a portion of the second protective member 13 via the bonding head 320 or from near the bonding head 320; a holding step S8 of the bonding head 320 holding the chips 14 via the heated second protective member 13; and a bonding step S9 of bonding the chips 14 to the base substrate 200 by the bonding head 320.

[0096] The above-described mounting method does not significantly change the mounting process from the cutting step to the bonding step, and can prevent particles from adhering to the first surface 14a and the second surface 14b of the chip 14 when dicing the substrate 11 or picking up the chip 14. In addition, since the mounting method includes a heating step of heating the second protective member 13, it is possible to improve the chip holding ability of the bonding head 320 during pick-up. [Explanation of symbols]

[0097] 10 laminate, 11 base material, 11a: a first surface of the substrate; 11b a second surface of the substrate; 12 first protective member, 13 second protective member, 14 chips, 14a first side of the chip, 14b second side of chip, 100 dicing tape, 110 dicing frame, 200 base board, 300, 300A, 300B mounting equipment, 310 Pickup Tool, 320 bonding head, 330 cutting section, 340 Cleaning section, 350 irradiation unit, 360 surface activation part, 370 Heating section.

Claims

1. A mounting method carried out by a mounting apparatus including at least a bonding head, a preparation step of preparing a laminate including at least a substrate, a first protective member, and a second protective member, the first protective member being stacked as an outermost layer; a cutting step of cutting the laminate into chips; a first removal step of removing the first protective member from the chip; a heating step of heating at least a portion of the second protective member via the bonding head or from the vicinity of the bonding head; a holding step in which the bonding head holds the chip via the second protective member after heating; a bonding step of bonding the chip to a base substrate by the bonding head; and how to implement it.

2. The mounting method according to claim 1 , further comprising a second removing step of removing the second protective member from the chip after the bonding step.

3. The mounting method according to claim 1 , wherein the heating step heats at least a portion of the second protection member by either laser heating or lamp heating.

4. 2. The mounting method according to claim 1, wherein the holding surface of the bonding head is a smooth surface.

5. the first protective member is a water-soluble sheet material, 2. The mounting method according to claim 1, wherein the first removing step removes the first protective member from the chip by washing with water.

6. the second protective member is a sheet material that becomes water-soluble when irradiated with active energy rays, The method further includes an irradiation step of irradiating the second protective member with the active energy rays to change the second protective member to a water-soluble state, 3. The mounting method according to claim 2, wherein the second removing step removes the second protective member from the chip by washing with water after the irradiating step.

7. The mounting method according to claim 6 , wherein the second protective member generates bending stress when irradiated with the active energy rays.

8. the first protective member is removable with water at a first temperature; the second protective member is removable with water at a second temperature higher than the first temperature; the first removing step includes removing the first protective member from the surface of the chip using water at the first temperature; 3. The mounting method according to claim 2, wherein the second removing step removes the second protective member from the chip with water at the second temperature after the bonding step.

9. The mounting method according to claim 1 , wherein the base material is a semiconductor chip or a wafer that serves as a substrate.

10. 2. The mounting method according to claim 1, further comprising a positioning step of positioning the chip after the first removing step so that the second protective member side faces the bonding head.

11. The mounting method according to claim 1 , wherein the first protective member is disposed on a first surface that is an upper surface of the base material, and the second protective member is disposed on a second surface that is a lower surface of the base material.

12. The mounting method according to claim 1 , wherein the second protective member is disposed on a first surface that is an upper surface of the base material, and the first protective member is disposed by being stacked on the second protective member.

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