Elastic wave devices

Abstract

The present invention provides an elastic wave device with improved heat dissipation, superior adhesion between the sealing portion and the wiring board, and controlled amount of sealing resin that penetrates between the wiring board and the device chip. [Solution] The elastic wave device comprises a wiring board 3, a device chip 5 having a resonator and flip-chip bonded to the wiring board 3 via a plurality of bumps, a metal pattern 7 formed on the outer edge portion of the wiring board 3, a plurality of bump pads 9 formed on the wiring board 3 including an antenna pad ANT, a transmit pad Tx, a receive pad Rx, and a ground pad GND, a solder resist layer 10 formed to bond to both the metal pattern 7 and the wiring board 3, and a sealing portion made of a sealing resin formed by a thermosetting process that penetrates between the wiring board 3 and the device chip 5 to hermetically seal the device chip 5, wherein the solder resist layer 10 and the sealing portion are bonded.

Description

Technical Field

[0001] The present invention relates to an elastic wave device.

Background Art

[0002] In smartphones and the like, typified by mobile communication terminals, it is required to support communication in a plurality of high-frequency bands. For this reason, a front-end module equipped with a plurality of band-pass filters that pass communication in a high-frequency band is used.

[0003] In addition, in the front-end module, elastic wave devices such as band-pass filters, duplexers, and quadruplexers are used.

[0004] Patent Document 1 discloses an example of technology related to an elastic wave device.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] The main problems to be solved by the present invention will be described.

[0007] In elastic wave devices such as band-pass filters and duplexers, a device chip such as a SAW filter is flip-chip bonded to a wiring board.

[0008] The resonator that constitutes the SAW filter forms a hollow region for mechanical vibration and is sealed with synthetic resin, metal, or the like.

[0009] The resonator of an elastic wave device generates heat due to mechanical vibrations, so a package structure with good heat dissipation is desirable.

[0010] Furthermore, in order to suppress the intrusion of moisture into the sealed hollow region, it is desirable that the sealing portion and the wiring board have high adhesion.

[0011] Furthermore, if the metal pattern formed on the outer edge of the wiring board is a jagged pattern facing towards the center, the sealing resin is more likely to penetrate between the wiring board and the device chip.

[0012] Furthermore, it is desirable that the metal patterns through which electrical signals of the desired frequency band pass and the metal patterns through which electrical signals of the desired frequency band do not pass be designed to prevent coupling phenomena from occurring.

[0013] Poor heat dissipation can lead to performance degradation and reduced power handling life. Furthermore, poor adhesion between the encapsulation and the wiring board can easily cause rust on the internal metal, resulting in performance degradation and reduced lifespan. Coupling phenomena can also degrade performance. Additionally, if a large amount of encapsulation resin penetrates between the wiring board and the device chip, there is a higher risk of the resin coming into contact with the resonator.

[0014] The present invention has been made in view of the above problems, and aims to provide an elastic wave device that has better heat dissipation, excellent adhesion between the sealing part and the wiring board, and excellent properties that make it difficult for coupling to occur between metal patterns through which electrical signals of a desired frequency band pass and metal patterns through which electrical signals of a desired frequency band do not pass, while controlling the amount of sealing resin that penetrates between the wiring board and the device chip. [Means for solving the problem]

[0015] In order to achieve the above objectives, the present invention provides, Wiring board and A device chip comprising a resonator is flip-chip bonded to the aforementioned wiring board via a plurality of bumps, A metal pattern formed on the outer edge portion of the aforementioned wiring board, A plurality of bump pads are formed on the aforementioned wiring board, including an antenna pad, a transmit pad, a receive pad, and a ground pad, A solder resist layer formed to bond to both the metal pattern and the wiring substrate, A sealing portion made of a sealing resin formed by a thermosetting process, which can penetrate between the wiring board and the device chip, hermetically seals the device chip. Equipped with, The solder resist layer and the sealing portion are joined together to form an elastic wave device.

[0016] In one embodiment of the present invention, the solder resist layer has a thermal conductivity of 1.0 W / mK or higher.

[0017] In one embodiment of the present invention, the metal pattern has an uneven or jagged shape.

[0018] In one embodiment of the present invention, at least a portion of the metal pattern does not have the solder resist layer formed on it.

[0019] In one embodiment of the present invention, at least a portion of the solder resist layer is roughened.

[0020] One embodiment of the present invention is that the direction of the tip of the uneven or jagged portion of the metal pattern near the device chip having the resonator includes a region formed so as to be toward the outer edge of the wiring substrate and a region formed so as to be toward the center of the wiring substrate.

[0021] In one embodiment of the present invention, the tip direction of the uneven or jagged portion of the metal pattern formed in the peripheral area of ​​the antenna pad, the transmitting pad, or the receiving pad is formed to be toward the center of the wiring board.

[0022] The wiring board is substantially rectangular with a long side and a short side, and in the region between two of the bump pads arranged along at least one of the short sides, the length of the region formed such that the tip direction of the concavo-convex portion or zigzag portion of the metal pattern near the device chip having the resonator faces the outer edge of the wiring board is longer than the length of the region formed such that the tip direction of the concavo-convex portion or zigzag portion of the metal pattern faces the center of the wiring board, which is one aspect of the present invention.

[0023] The wiring board is substantially rectangular with a long side and a short side, and three or more of the bump pads are arranged along at least one of the long sides. The regions between two or more of the bump pads formed by arranging the three or more bump pads include a region between bump pads where the length of the region formed such that the tip direction of the concavo-convex portion or zigzag portion of the metal pattern near the device chip having the resonator faces the outer edge of the wiring board is longer than the length of the region formed such that the tip direction of the concavo-convex portion or zigzag portion of the metal pattern faces the center of the wiring board, and a region between bump pads where the length of the region formed such that the tip direction of the concavo-convex portion or zigzag portion of the metal pattern near the device chip having the resonator faces the outer edge of the wiring board is shorter than the length of the region formed such that the tip direction of the concavo-convex portion or zigzag portion of the metal pattern faces the center of the wiring board, which is one aspect of the present invention.

[0024] The wiring board is substantially rectangular with a long side and a short side, and three or more of the bump pads are arranged along at least one of the long sides. The regions between two or more of the bump pads formed by arranging the three or more bump pads are such that the length of the region formed so that the tip direction of the concavo-convex portion or zigzag portion of the metal pattern near the device chip including the resonator faces the outer edge of the wiring board is longer than the length of the region formed so that the tip direction of the concavo-convex portion or zigzag portion of the metal pattern faces the center of the wiring board. Two consecutive regions between the bump pads are provided, and the bump pad formed in the middle of the two consecutive regions is a ground pad, which is one aspect of the present invention.

[0025] A module including the elastic wave device is one aspect of the present invention.

Effects of the Invention

[0026] According to the present invention, it is possible to provide an elastic wave device with excellent heat dissipation, excellent adhesion between the sealing portion and the wiring board, excellent characteristics in which coupling between a metal pattern through which an electrical signal in a desired frequency band passes and a metal pattern through which an electrical signal in a desired frequency band does not pass is unlikely to occur, and the amount of the sealing resin that penetrates between the wiring board and the device chip is controlled.

Brief Description of the Drawings

[0027] [Figure 1] FIG. 1 is a cross-sectional view of the elastic wave device 1 according to the present embodiment. [Figure 2] FIG. 2 is a diagram showing a configuration example of the metal pattern 7 formed on the wiring board 3. [Figure 3] FIG. 3 is a diagram showing a configuration example of the solder resist layer 10 formed on the wiring board 3. [Figure 4] FIG. 4 is a diagram showing another configuration example of the solder resist layer 10. [Figure 5] FIG. 5 is a diagram for explaining the configuration of the device chip 5. [Figure 6] Figure 6 is a plan view showing an example where the elastic wave element 52 is a surface acoustic wave resonator. [Figure 7] Figure 7 is a cross-sectional view showing an example where the elastic wave element 52 is a piezoelectric thin-film resonator. [Figure 8] Figure 8 is a cross-sectional view of module 100 according to Embodiment 2 of the present invention. [Figure 9] Figure 9 shows a schematic diagram of the circuit configuration of module 100. [Modes for carrying out the invention]

[0028] The present invention will be clarified below by describing specific embodiments of the present invention with reference to the drawings.

[0029] Figure 1 is a cross-sectional view of the elastic wave device 1 according to this embodiment.

[0030] As shown in Figure 1, the elastic wave device 1 according to this embodiment comprises a wiring board 3 and two device chips 5 mounted on the wiring board 3.

[0031] In this embodiment, an example of an elastic wave device that is a duplexer with two device chips 5 mounted is shown. However, naturally, the present invention may also be applied to an elastic wave device that is a bandpass filter with one device chip 5, or to a quattroplexer with four device chips 5 mounted. Furthermore, it is possible to form a functional element that realizes a duplexer on a single device chip.

[0032] The wiring board 3 may be, for example, a multilayer substrate made of resin, or a low-temperature co-fired ceramics (LTCC) multilayer substrate made of multiple dielectric layers. The wiring board 3 also has multiple external connection terminals 31.

[0033] The device chip 5 can use a substrate made of, for example, a piezoelectric single crystal such as lithium tantalate, lithium niobate, or quartz, or a piezoelectric ceramic.

[0034] Furthermore, the device chip 5 may use a substrate in which a piezoelectric substrate and a support substrate are bonded together. The support substrate can be, for example, a sapphire substrate, an alumina substrate, a spinel substrate, or a silicon substrate.

[0035] A metal pattern 7 and a number of bump pads 9 are formed on the wiring board 3. The metal pattern 7 is formed on the outer edge portion of the wiring board 3. The bump pads 9 are formed inside the metal pattern 7. The metal pattern 7 and bump pads 9 can be made of, for example, copper or a copper-containing alloy. The metal pattern 7 and bump pads 9 can also have a thickness of, for example, 10 μm to 35 μm.

[0036] A solder resist layer 10 is formed on the metal pattern 7 and the wiring substrate 3. The solder resist layer 10 is made of, for example, a thermosetting epoxy resin. The thickness of the solder resist layer 10 can be, for example, 10 μm to 35 μm. The solder resist layer 10 is formed to bond to both the metal pattern 7 and the wiring substrate 3.

[0037] A sealing portion 17 is formed to cover the device chip 5. The sealing portion 17 is formed of an insulator such as a synthetic resin. The synthetic resin can be, for example, epoxy resin or polyimide, but is not limited to these. Preferably, epoxy resin is used and the sealing portion 17 is formed using a low-temperature curing process. In the thermosetting process, which is the process of forming the sealing portion 17, the sealing resin can penetrate between the wiring substrate 3 and the device chip 5. Here, the metal pattern 7 and the sealing portion 17 are metal and resin, respectively, and the bonding strength is weak, so there is a risk that the sealing portion 17 will peel off from the wiring substrate 3. Therefore, in wiring substrates without a solder resist layer, the area of ​​the metal pattern 7 was considerably limited in order to ensure sufficient bonding strength. The solder resist layer 10 is a resin, but it has high adhesion to the metal pattern 7, which is metal. Also, because the solder resist layer 10 is a resin, it has high adhesion to the wiring substrate 3 and the sealing portion 17. The solder resist layer 10 has high adhesion to the metal pattern 7. Therefore, by providing the solder resist layer 10, the constraints on the area of ​​the metal pattern 7 are eased, the constraints on the peel strength between the wiring board 3 and the sealing portion 17 are reduced, and a more flexible design becomes possible.

[0038] The device chip 5 is mounted on the wiring board 3 via the bump 15 by flip-chip bonding.

[0039] Bump 15 can be made of, for example, gold. The height of bump 15 is, for example, 20 μm to 50 μm.

[0040] The bump pad 9 is electrically connected to the device chip 5 via the bump 15. Depending on the thickness of the solder resist layer 10 and the height of the bump 15, there is a risk that the device chip 5 and the solder resist layer 10 may come into contact during the flip-chip bonding process of the device chip 5. Therefore, as shown in Figure 1, it is desirable to ensure a distance A between the solder resist layer 10 and the device chip 5 of approximately 50 μm to 100 μm.

[0041] Figure 2 shows an example of the configuration of a metal pattern 7 formed on a wiring board 3.

[0042] As shown in Figure 2, a metal pattern 7 is formed on the outer edge of the wiring board 3. The metal pattern 7 has uneven or jagged portions. The metal pattern 7 also includes an OUTER region where the tips of the uneven or jagged portions are directed toward the outer edge of the wiring board 3. The metal pattern 7 also includes a CENTER region where the tips of the uneven or jagged portions are directed toward the center of the wiring board 3.

[0043] Furthermore, the metal pattern 7 does not necessarily have to be a continuous metal pattern; intermittent sections may be formed.

[0044] The area 17, enclosed by the solid line indicating the outer edge of the wiring board 3 and the solid line indicating the outer edge of the device chip 5, represents the area to which the sealing portion 17 is joined. The area 17 to which the sealing portion 17 is joined includes an area that is joined to the wiring board 3 and an area that is joined to the metal pattern 7 formed on the wiring board 3. In other words, the sealing portion 17 (not shown in Figure 2) is joined to both the wiring board 3 and the metal pattern 7.

[0045] The metal pattern 7 enhances thermal conductivity between the wiring substrate 3 and the sealing portion 17, improving heat dissipation of the elastic wave device. Furthermore, the boundary between the area where the solder resist layer 10 (not shown in Figure 2) is joined to the wiring substrate 3 and the area where the sealing portion 17 is joined to the metal pattern 7 has an uneven or jagged shape, which lengthens the boundary line. In the case of an uneven shape, the solder resist layer 10 fits into the recessed parts of the metal pattern 7, and in the case of a jagged shape, it fits into the valleys of the metal pattern 7. This provides an anchoring effect, improving the adhesion between the solder resist layer 10 and the wiring substrate 3.

[0046] Furthermore, as shown in Figure 2, multiple bump pads 9 are formed on the wiring board 3. These multiple bump pads 9 include an antenna pad ANT, a transmit pad Tx, a receive pad Rx, and a ground pad GND9. In addition, some of the bump pads, such as the ground pad GND97, are electrically connected to the metal pattern 7 and are formed as a bump pad GND9 that is at ground potential. This allows for ground reinforcement.

[0047] Furthermore, as shown in Figure 2, it is desirable that the metal pattern 7 formed in the peripheral area of ​​the antenna pad ANT, transmit pad Tx, or receive pad Rx be formed such that the tip direction of the uneven or jagged portion of the metal pattern 7 is toward the center of the wiring board. This makes it possible to limit the parasitic capacitance between the antenna pad ANT, transmit pad Tx, or receive pad Rx and the metal pattern 7, and to sufficiently suppress the occurrence of coupling phenomena.

[0048] Furthermore, as shown in Figure 2, the wiring board 3 is a roughly rectangular shape with a long side and a short side. The region R1 between the two bump pads arranged along the short side is such that the length of the region formed so that the tip direction of the uneven or jagged portion of the metal pattern 7 is toward the outer edge of the wiring board 3 is longer than the length of the region formed so that the tip direction of the uneven or jagged portion of the metal pattern 7 is toward the center of the wiring board 3.

[0049] Here, in the process of forming the sealing portion 17, there is a problem that the sealing resin penetrates between the wiring board 3 and the device chip 5 and comes into contact with the functional elements formed on the device chip 5. In the CENTER region, where the tip direction of the uneven or jagged portion is formed toward the center of the wiring board 3, the thickness of the metal pattern 7 is considerable, for example, 10 μm to 35 μm. Therefore, due to the pressure applied when forming the sealing portion 17, the metal pattern 7 acts as a barrier, making it easy for the sealing resin to penetrate between the wiring board 3 and the device chip 5.

[0050] In the short-side direction of the wiring board 3, functional elements are often formed in areas relatively close to the outer edge of the device chip 5. Therefore, in region R1, it is desirable to make the length OUTERLENGTH as long as possible.

[0051] For resonators on a device chip 5 located near a region CENTER, where the tip direction of the uneven or jagged portion is directed toward the center of the wiring board 3, it is desirable to form them as far away from the outer edge of the device chip 5 as possible. Furthermore, for resonators on a device chip 5 located near a region OUTER, where the tip direction of the uneven or jagged portion is directed toward the outer edge of the wiring board 3, even if they are formed close to the outer edge of the device chip 5, the possibility of the sealing resin penetrating and making contact is low. Therefore, from the viewpoint of space efficiency, it is desirable to form them close to the outer edge of the device chip 5.

[0052] Furthermore, as shown in Figure 2, four bump pads are arranged along the long side of the wiring board 3. This creates three regions R2, R3, and R4 between the bump pads. Region R2 is a region between bump pads where the length of the region formed so that the tip direction of the uneven or jagged portion of the metal pattern 7 is toward the outer edge of the wiring board 3 is shorter than the length of the region formed so that the tip direction of the uneven or jagged portion of the metal pattern 7 is toward the center of the wiring board 3.

[0053] Regions R3 and R4 are regions between bump pads where the length of the region formed so that the tip direction of the uneven or jagged portion of the metal pattern 7 is toward the outer edge of the wiring board 3 is longer than the length of the region formed so that the tip direction of the uneven or jagged portion of the metal pattern 7 is toward the center of the wiring board 3.

[0054] Regions R3 and R4 are adjacent, and there are two consecutive regions between bump pads where the length of the region formed so that the tip direction of the uneven or jagged portion of the metal pattern 7 is toward the outer edge of the wiring board 3 is longer than the length of the region formed so that the tip direction of the uneven or jagged portion of the metal pattern 7 is toward the center of the wiring board 3. The bump pad formed in the middle of regions R3 and R4 is the ground pad GND97. As mentioned above, the ground pad GND97 is electrically connected to the metal pattern 7.

[0055] Figure 3 shows an example of the configuration of a solder resist layer 10 formed on a wiring substrate 3. Figure 3 shows the solder resist layer 10 placed on the example of the metal pattern 7 shown in Figure 2. The portion of the metal pattern 7 that overlaps with the solder resist layer 10 is shown by a dotted line. As shown in Figure 3, the solder resist layer 10 is formed on the outer edge portion of the wiring substrate 3. The solder resist layer 10 includes a region formed directly on the wiring substrate 3 and a region formed on the metal pattern 7.

[0056] It is desirable to use a solder resist with excellent heat dissipation properties for the solder resist layer 10. A solder resist with excellent heat dissipation properties has, for example, a thermal conductivity of 1.0 W / m·K or higher. For example, the PSR (registered trademark (manufactured by Taiyo Holdings Co., Ltd.))-4000HS series can be used. More preferably, a solder resist with a thermal conductivity of 3 W / m·K or higher can be used. Conventional solder resists have a thermal conductivity of about 0.2 to 0.5 W / m·K.

[0057] It is desirable to use a solder resist that exhibits low dielectric properties in the high-frequency (GHz band) region for the solder resist layer 10. A solder resist that exhibits low dielectric properties in the high-frequency (GHz band) region has a dielectric constant of 2.0 to 3.0 DK at 10 GHz, for example. For example, a solder resist from the PSR (registered trademark (manufactured by Taiyo Holdings Co., Ltd.))-4000 series for high-frequency component substrates can be used. Conventional solder resists have dielectric properties of approximately 4.1 to 4.3 DK in the high-frequency (GHz band) region.

[0058] Figure 4 shows another example of the configuration of the solder resist layer 10. As shown in Figure 4, it is desirable to roughen the solder resist layer 10. This further improves the adhesion with the sealing portion 17. Mechanical or chemical methods can be used as appropriate for the roughening treatment.

[0059] Figure 5 is a diagram illustrating the configuration of device chip 5.

[0060] As shown in Figure 5, an elastic wave element 52 and a wiring pattern 54 are formed on the device chip 5.

[0061] An insulator 56 is formed on the wiring pattern 54. The insulator 56 can be made of, for example, polyimide. The insulator 56 is formed with a film thickness of, for example, 1000 nm.

[0062] A wiring pattern 54 is also formed on the insulator 56, and the wiring is formed so as to intersect three-dimensionally via the insulator 56.

[0063] The elastic wave element 52 and the wiring pattern 54 are made of suitable metals or alloys such as silver, aluminum, copper, titanium, and palladium. These metal patterns may also be formed by stacking multiple metal layers to create a multilayer metal film. The thickness of the elastic wave element 52 and the wiring pattern 54 can be, for example, 150 nm to 400 nm.

[0064] The wiring pattern 54 includes wiring that constitutes the input pad In, the output pad Out, and the ground pad GND. The wiring pattern 54 is also electrically connected to the elastic wave element 52.

[0065] As shown in Figure 5, by forming multiple elastic wave elements 52, a bandpass filter can be constructed, for example. The bandpass filter is designed to pass only electrical signals within a desired frequency band from the electrical signals input from the input pad In.

[0066] The electrical signal input from the input pad In passes through a bandpass filter, and the electrical signal in the desired frequency band is output to the output pad Out.

[0067] The electrical signal output to the output pad Out is output from the external connection terminal 31 of the wiring board 3 via the bump 15 and bump pad 9.

[0068] Figure 6 is a plan view showing an example where the elastic wave element 52 is a surface acoustic wave resonator.

[0069] As shown in Figure 6, an IDT (Interdigital Transducer) 52a for exciting surface acoustic waves and a reflector 52b are formed on the device chip 5. The IDT 52a has a pair of comb-shaped electrodes 52c facing each other.

[0070] The comb-shaped electrode 52c has multiple electrode fingers 52d and a busbar 52e connecting the multiple electrode fingers 52d. The reflector 52b is provided on both sides of the IDT 52a.

[0071] The IDT52a and reflector 52b are made of, for example, an aluminum-copper alloy. The IDT52a and reflector 52b are thin films with a thickness of, for example, 150 nm to 400 nm.

[0072] The IDT 52a and reflector 52b may contain other metals, such as titanium, palladium, silver, or other suitable metals or alloys thereof, or may be formed from such alloys. Alternatively, the IDT 52a and reflector 52b may be formed from a laminated metal film obtained by stacking multiple metal layers.

[0073] Figure 7 is a cross-sectional view showing an example where the elastic wave element 52 is a piezoelectric thin-film resonator.

[0074] As shown in Figure 7, a piezoelectric film 62 is provided on a chip substrate 60. A lower electrode 64 and an upper electrode 66 are provided so as to sandwich the piezoelectric film 62. A gap 68 is formed between the lower electrode 64 and the chip substrate 60. The lower electrode 64 and the upper electrode 66 excite elastic waves in the thickness longitudinal vibration mode within the piezoelectric film 62.

[0075] The chip substrate 60 can be, for example, a semiconductor substrate such as silicon, or an insulating substrate such as sapphire, alumina, spinel, or glass. The piezoelectric film 62 can be, for example, aluminum nitride.

[0076] The lower electrode 64 and the upper electrode 66 can be made of a metal such as ruthenium.

[0077] The elastic wave element 52 can be used in a multi-mode filter or ladder filter as appropriate to obtain the desired bandpass filter characteristics.

[0078] According to the embodiment of the present invention described above, it is possible to provide an elastic wave device that has better heat dissipation, excellent adhesion between the sealing portion and the wiring substrate, and excellent properties that make it difficult for coupling to occur between metal patterns through which electrical signals of a desired frequency band pass and metal patterns through which electrical signals of a desired frequency band do not pass, while controlling the amount of sealing resin that penetrates between the wiring substrate and the device chip.

[0079] (Example 2) Next, Example 2, which is another embodiment of the present invention, will be described.

[0080] Figure 8 is a cross-sectional view of module 100 according to Embodiment 2 of the present invention.

[0081] As shown in Figure 8, the elastic wave device 1 is mounted on the main surface of the wiring board 130. The elastic wave device 1 can be a dual filter consisting of, for example, a first bandpass filter BPF1 and a second bandpass filter BPF2, although this is not shown in the figure.

[0082] The wiring board 130 has a plurality of external connection terminals 131. The plurality of external connection terminals 131 are configured to be mounted on the motherboard of a predetermined mobile communication terminal.

[0083] A first inductor 111 and a second inductor 112 are mounted on the main surface of the wiring board 130 for impedance matching. The module 100 is sealed by a sealing section 117 for sealing multiple electronic components, including the elastic wave device 1.

[0084] Integrated circuit components (ICs) are mounted inside the wiring board 130. The integrated circuit components (ICs), although not shown in the diagram, include a switching circuit SW, a first low-noise amplifier LNA1, and a second low-noise amplifier LNA2.

[0085] Figure 9 shows a schematic diagram of the circuit configuration of module 100.

[0086] As shown in Figure 9, the common input terminal 101 (external connection terminal 131) of module 100 is connected to the antenna terminal ANT. The first output terminal 103 and the second output terminal 105 (external connection terminal 131) are connected to a signal processing circuit, although they are not shown in the figure.

[0087] From the common input terminal 101, a switching circuit SW separates the signal that passes through the first bandpass filter BPF1 from the signal that passes through the second bandpass filter BPF2.

[0088] The signal that has passed through the first bandpass filter BPF1 is impedance-matched by the first inductor 111, amplified by the first low-noise amplifier LNA1, and output from the first output terminal 103. Alternatively, if the first bandpass filter BPF1 is a transmission filter, the first output terminal 103 functions as an input terminal, and a signal that has been amplified by the first low-noise amplifier LNA1 and impedance-matched by the first inductor 111 passes through the first bandpass filter BPF1 and is transmitted from the antenna terminal.

[0089] The signal that has passed through the second bandpass filter BPF2 is impedance-matched by the second inductor 112, amplified by the second low-noise amplifier LNA2, and output from the second output terminal 105. Alternatively, if the second bandpass filter BPF2 is a transmission filter, the second output terminal 105 functions as an input terminal, and a signal that has been amplified by the second low-noise amplifier LNA2 and impedance-matched by the second inductor 112 passes through the second bandpass filter BPF2 and is transmitted from the antenna terminal.

[0090] Other components are omitted as they overlap with those described in Example 1.

[0091] According to the embodiments of the present invention described above, it is possible to provide a module having an elastic wave device with excellent characteristics, such as better heat dissipation, superior adhesion between the sealing portion and the wiring board, and reduced coupling between a metal pattern through which electrical signals of a desired frequency band pass and a metal pattern through which electrical signals of a desired frequency band do not pass.

[0092] Naturally, the present invention is not limited to the embodiments described above, but includes all embodiments that can achieve the objectives of the present invention.

[0093] Furthermore, while several aspects of at least one embodiment have been described above, it should be understood that various modifications, alterations, and improvements will be readily conceivable to those skilled in the art.

[0094] Such modifications, alterations, and improvements are intended to be part of this disclosure and within the scope of the invention. It should be understood that the embodiments of the methods and apparatus described herein are not limited to their application to the structural and arrangement details of the components described above or illustrated in the accompanying drawings. The methods and apparatus can be implemented in other embodiments and carried out or performed in various ways. Specific implementation examples are given herein for illustrative purposes only and are not intended to limit the scope of the invention.

[0095] Furthermore, the expressions and terminology used herein are for illustrative purposes only and should not be considered limiting. The use herein of “includes,” “equips,” “possesses,” “contains,” and variations thereof means the inclusion of the items and their equivalents and additional items listed below. The reference to “or” can be interpreted as any term written using “or” referring to one, more than one, or all of the terms written. References to front, back, left, right, top, bottom, up, down, and left and right are all intended for the convenience of description and do not imply that the components of the present invention are limited to any one positional or spatial orientation. Accordingly, the above description and drawings are illustrative only. [Explanation of Symbols]

[0096] 1. Elastic wave device 3 130 Wiring board 5 device chips 7 Metal Pattern 9 GND9 Bump Pad 10 Solder Resist Layers 11 Roughening part 15 Bump 17 117 Sealing section 31 131 External connection terminal 52 Elastic wave element 54 Wiring Patterns 56 Insulator 60 chip substrates 62 Piezoelectric film 64 Lower electrode 66 Upper electrode 68 void 100 modules 101 Common input terminal 103 First Output Terminal 105 Second output terminal 111 First Inductor 112 Second Inductor ANT antenna terminal SW switching circuit BPF1 First bandpass filter BPF2 Second Bandpass Filter LNA1 First Low-Noise Amplifier LNA2 Second Low-Noise Amplifier IC Integrated Circuit Components

Claims

1. Wiring board and A device chip comprising a resonator is flip-chip bonded to the aforementioned wiring board via a plurality of bumps, A metal pattern formed on the outer edge portion of the aforementioned wiring board, A plurality of bump pads are formed on the aforementioned wiring board, including an antenna pad, a transmit pad, a receive pad, and a ground pad, A solder resist layer formed to bond to both the metal pattern and the wiring substrate, A sealing portion made of a sealing resin formed by a thermosetting process, which can penetrate between the wiring board and the device chip, hermetically seals the device chip. Equipped with, The solder resist layer and the sealing portion are joined together in this elastic wave device.

2. The elastic wave device according to claim 1, wherein the solder resist layer has a thermal conductivity of 1.0 W / mK or more.

3. The elastic wave device according to claim 1, wherein the metal pattern has an uneven or jagged shape.

4. The acoustic wave device according to claim 1, wherein at least a portion of the metal pattern does not have the solder resist layer formed on it.

5. The elastic wave device according to claim 1, wherein at least a portion of the solder resist layer is roughened.

6. The elastic wave device according to claim 3, wherein the direction of the tip of the uneven or jagged portion of the metal pattern near the device chip having the resonator includes a region formed so as to be toward the outer edge of the wiring substrate and a region formed so as to be toward the center of the wiring substrate.

7. The elastic wave device according to claim 3, wherein the tip direction of the uneven or jagged portion of the metal pattern formed in the peripheral region of the antenna pad, the transmitting pad, or the receiving pad is formed toward the center of the wiring board.

8. The elastic wave device according to claim 3, wherein the wiring board is substantially rectangular having a long side and a short side, and in the region between two bump pads arranged along at least one of the short sides, the length of the region formed such that the direction of the leading edge of the uneven or jagged portion of the metal pattern near the device chip comprising the resonator is toward the outer edge of the wiring board is longer than the length of the region formed such that the direction of the leading edge of the uneven or jagged portion of the metal pattern is toward the center of the wiring board.

9. The wiring board is substantially rectangular having a long side and a short side, and three or more bump pads are arranged along at least one of the long sides, and the region between two or more bump pads formed by the arrangement of the three or more bump pads is such that the length of the region formed so that the tip direction of the uneven or jagged portion of the metal pattern near the device chip having the resonator is toward the outer edge of the wiring board is longer than the length of the region formed so that the tip direction of the uneven or jagged portion of the metal pattern is toward the center of the wiring board, The elastic wave device according to claim 3, wherein the length of the region formed near the device chip having the resonator such that the tip direction of the uneven or jagged portion of the metal pattern is toward the outer edge of the wiring substrate is shorter than the length of the region formed such that the tip direction of the uneven or jagged portion of the metal pattern is toward the center of the wiring substrate.

10. The elastic wave device according to claim 3, wherein the wiring board is substantially rectangular having a long side and a short side, and three or more bump pads are arranged along at least one of the long sides, and the regions between two or more bump pads formed by the arrangement of the three or more bump pads are such that the length of the region formed so that the direction of the tip of the uneven or jagged portion of the metal pattern near the device chip comprising the resonator is toward the outer edge of the wiring board is longer than the length of the region formed so that the direction of the tip of the uneven or jagged portion of the metal pattern is toward the center of the wiring board, and the bump pad formed in the middle of the two consecutive regions is a ground pad.

11. A module comprising an elastic wave device according to any one of claims 1 to 10.

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