Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method that suppress a decrease in the temperature of the processing liquid supplied to the lower surface of the substrate. [Solution] The substrate processing apparatus 1 includes a rotating holding unit 10 for holding and rotating a substrate W, an upper processing liquid supply unit 20, a lower discharge nozzle 32 for discharging processing liquid L toward the lower surface of the substrate W, a lower supply pipe 33 connected to the lower discharge nozzle, a lower processing liquid supply unit 30 having a heating unit for heating the processing liquid L supplied to the lower supply pipe and a flow rate adjustment unit for adjusting the flow rate of the processing liquid discharged from the lower discharge nozzle, and a control device 40 for controlling the flow rate adjustment unit. The control device includes a temperature-raising control unit 41 that controls the flow rate adjustment unit to discharge processing liquid to a height that does not reach the lower surface b of the substrate while the rotating holding unit is holding the substrate, and raises the temperature of the lower supply pipe, and a processing control unit 42 that controls the flow rate adjustment unit to discharge processing liquid to a height that reaches the lower surface of the substrate after the temperature of the lower supply pipe has been raised, and processes the substrate.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] In a substrate processing apparatus that processes a substrate such as a semiconductor wafer with a processing liquid such as a chemical solution or a cleaning liquid, a single wafer type apparatus that processes each substrate one by one is widely adopted from the viewpoint of the uniformity and reproducibility of the processing for each substrate. In a single wafer type substrate processing apparatus, by rotating a rotating body holding the substrate, while rotating the substrate, the processing liquid is discharged toward the vicinity of the center of the upper surface of the substrate, and the processing liquid is spread over the entire upper surface of the substrate by centrifugal force to process the upper surface.

[0003] Generally, the higher the temperature of the processing liquid, the higher the processing rate. Therefore, the processing liquid is heated to a preset temperature. Then, the substrate processing apparatus discharges the processing liquid heated to the set temperature toward the upper surface of the substrate.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The substrate processing apparatus may discharge the processing liquid toward the lower surface of the substrate to process the lower surface of the substrate. The heated processing liquid flows through a supply pipe connected to a discharge nozzle and is discharged from the discharge nozzle toward the lower surface of the substrate. However, there is a risk that the temperature of the heated processing liquid may decrease while flowing through the supply pipe.

[0006] Embodiments of the present invention have been proposed to solve the above-mentioned problems, and their objective is to provide a substrate processing apparatus and a substrate processing method that suppress a decrease in the temperature of the processing liquid supplied to the lower surface of the substrate. [Means for solving the problem]

[0007] A substrate processing apparatus according to an embodiment of the present invention comprises: a rotating holding unit for holding and rotating a substrate; a bottom discharge nozzle for discharging a processing liquid toward the bottom surface of the substrate; a bottom supply pipe connected to the bottom discharge nozzle; a heating unit for heating the processing liquid supplied to the bottom supply pipe; a flow rate adjustment unit for adjusting the flow rate of the processing liquid discharged from the bottom discharge nozzle; and a control device for controlling the flow rate adjustment unit, wherein the control device comprises: a temperature rise control unit that controls the flow rate adjustment unit to discharge the processing liquid to a height that does not reach the bottom surface of the substrate while the rotating holding unit is holding the substrate, and raises the temperature of the bottom supply pipe; and a processing control unit that, after raising the temperature of the bottom supply pipe, controls the flow rate adjustment unit to discharge the processing liquid to a height that reaches the bottom surface of the substrate, and processes the substrate.

[0008] Furthermore, the substrate processing apparatus according to an embodiment of the present invention comprises: a rotating holding unit for holding and rotating a substrate; a nozzle head having a recess provided so as to face the lower surface of the substrate held by the rotating holding unit and a drainage hole opening into the recess; a lower discharge nozzle provided on the nozzle head for discharging processing liquid toward the lower surface of the substrate; a lower supply pipe connected to the lower discharge nozzle; a heating unit for heating the processing liquid supplied to the lower supply pipe; a flow rate adjustment unit for adjusting the flow rate of the processing liquid discharged from the lower discharge nozzle; and a control device for controlling the flow rate adjustment unit, wherein the control device comprises: a temperature rise control unit for controlling the flow rate adjustment unit so that the processing liquid discharged from the lower discharge nozzle lands in the recess and raises the temperature of the lower supply pipe; and a processing control unit for controlling the flow rate adjustment unit so that, after raising the temperature of the lower supply pipe, the lower discharge nozzle discharges the processing liquid to a height where it reaches the lower surface of the substrate while the rotating holding unit is holding the substrate, and performs processing on the substrate.

[0009] A substrate processing method according to an embodiment of the present invention includes: a holding step of holding a substrate; a rotating step of rotating the substrate; a heating step, which occurs after the holding step, of adjusting the flow rate of the heated processing liquid discharged from a lower discharge nozzle connected to a lower supply pipe to a height that does not reach the lower surface of the substrate, and heating the lower supply pipe; and a processing step, which occurs after the heating step, of adjusting the flow rate of the processing liquid discharged from the lower discharge nozzle to a height that reaches the lower surface of the substrate, and processing the substrate.

[0010] Furthermore, the substrate processing method according to an embodiment of the present invention includes a heating step of heating the lower supply pipe by discharging a heated processing liquid from a lower discharge nozzle connected to a lower supply pipe, a holding step of holding the substrate, a rotating step of rotating the substrate, and a processing step of processing the substrate by adjusting the flow rate of the processing liquid discharged from the lower discharge nozzle so that the processing liquid is discharged from the lower discharge nozzle to a height that reaches the lower surface of the substrate, wherein in the heating step, a drain hole is opened and the flow rate of the processing liquid discharged from the lower discharge nozzle is adjusted so that the processing liquid discharged from the lower discharge nozzle lands in a recess facing the lower surface of the substrate. [Effects of the Invention]

[0011] According to embodiments of the present invention, it is possible to suppress a decrease in the temperature of the processing liquid supplied to the lower surface of the substrate. [Brief explanation of the drawing]

[0012] [Figure 1] This is a schematic side view showing the overall configuration of the substrate processing apparatus according to the first embodiment. [Figure 2] This is a schematic diagram showing the discharge state of the processing liquid during processing control in the first embodiment. [Figure 3] This is a plan view of the nozzle head in the first embodiment. [Figure 4]This is a schematic diagram showing the state in which the processing liquid is not being discharged in the first embodiment. [Figure 5] This is a schematic diagram showing the discharge state of the processing liquid during temperature control in the first embodiment. [Figure 6] This is a flowchart showing the processing method in the first embodiment. [Figure 7] This is a diagram showing the processing method in the second embodiment. [Figure 8] This is a schematic diagram showing the discharge state of the processing liquid during temperature control in the second embodiment. [Figure 9] This is a schematic diagram showing the piping configuration in a modified example. [Modes for carrying out the invention]

[0013] [First Embodiment] A first embodiment of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the embodiments described below.

[0014] [Summary] As shown in Figure 1, the substrate processing apparatus 1 is a device that holds and rotates a substrate W using a rotating holding unit 10 while discharging a processing liquid L onto the substrate W. The substrate processing apparatus 1 discharges the processing liquid L onto the upper surface t and lower surface b of the substrate W, and processes both the upper surface t and lower surface b of the substrate W. The processing liquid L discharged onto the upper surface t and lower surface b of the substrate W is an etching solution, for example, an aqueous solution containing phosphoric acid.

[0015] Before processing the bottom surface b of the substrate W, the substrate processing apparatus 1 discharges processing liquid L from the bottom discharge nozzle 32 to a height that does not reach the bottom surface b of the substrate W, thereby raising the temperature of the bottom supply pipe 33 connected to the bottom discharge nozzle 32. After raising the temperature of the bottom supply pipe 33, the processing liquid L is discharged to a height that reaches the bottom surface b of the substrate W, and the bottom surface b of the substrate W is processed.

[0016] As shown in Fig. 1, the substrate processing apparatus 1 includes a rotation holding unit 10, an upper surface processing liquid supply unit 20, a lower surface processing liquid supply unit 30, and a control device 40.

[0017] [Rotation holding unit] The rotation holding unit 10 holds and rotates the substrate W. The rotation holding unit 10 includes a rotating body 11, a holding member 12, and a drive mechanism 13. The rotating body 11 is a cylindrical member, for example, a rotating table. One end of the rotating body 11 is blocked by an opposing surface 11a. The opposing surface 11a is a circular surface with a diameter larger than that of the substrate W, and faces the substrate W to be processed with a gap therebetween. A through hole serving as a space is formed in the central portion of the rotating body 11. A holding cylinder 131 is inserted into the through hole of the rotating body 11. The holding cylinder 131 is a hollow annular member and forms a flow path provided along the rotation axis of the rotating body 11. This flow path constitutes a drainage path 313. The holding cylinder 131 is supported by a pedestal (not shown). Therefore, the holding cylinder 131 does not rotate in conjunction with the rotating body 11.

[0018] The holding member 12 is a fixture that holds the substrate W with a gap from the opposing surface 11a of the rotating body 11. The holding member 12 is provided so as to protrude from the opposing surface 11a of the rotating body 11. A plurality of holding members 12 are provided at equal intervals along the position corresponding to the outer peripheral edge of the substrate W. Further, the holding member 12 is movably provided between a closed position where it contacts the outer peripheral edge of the substrate W to hold the substrate W and an open position where it moves away from the outer peripheral edge of the substrate W to release the substrate W by an opening / closing mechanism (not shown).

[0019] The drive mechanism 13 is a drive source (motor) that rotates the rotating body 11. By rotating the rotating body 11, the drive mechanism 13 rotates the substrate W held by the holding member 12 about an axis extending in a direction orthogonal to the upper surface t (lower surface b) passing through the center of the substrate W with the axis as the rotation axis. The drive source is a hollow motor, and the holding cylinder 131 is inserted therethrough so as to be non-contact with the inside thereof. Therefore, the holding cylinder 131 does not rotate.

[0020] [Upper surface processing liquid supply unit] The top surface treatment liquid supply unit 20 supplies treatment liquid L to the top surface t of the substrate W. The top surface treatment liquid supply unit 20 includes a top surface discharge nozzle 21, an arm 22, and a moving mechanism 23.

[0021] The top discharge nozzle 21 is positioned above the center of the top surface t of the substrate W at the supply position described later. The top discharge nozzle 21 discharges the processing liquid L towards the center of the top surface t of the substrate W. The top discharge nozzle 21 is connected to a top supply pipe (not shown). The top supply pipe is connected to a processing liquid supply source (not shown), and the top discharge nozzle 21 discharges the processing liquid L supplied from the processing liquid supply source via the top supply pipe. The processing liquid L is heated to a predetermined temperature, such as 160°C, before being discharged.

[0022] The arm 22 holds the top surface discharge nozzle 21 at its tip. The moving mechanism 23 moves the arm 22 in a direction parallel to the top surface t of the substrate W, thereby moving the top surface discharge nozzle 21 in a direction parallel to the top surface t of the substrate W. The moving mechanism 23 moves the top surface discharge nozzle 21 between a supply position, which is above the center of the substrate W, and a retracted position, which is moved away from above the substrate W, by moving the arm 22.

[0023] The top surface treatment liquid supply unit 20 has a cleaning liquid discharge nozzle (not shown) for discharging cleaning liquid toward the top surface t of the substrate W. The cleaning liquid discharge nozzle is connected to a cleaning liquid supply source (not shown) via a cleaning liquid supply pipe (not shown). Carbonated water or pure water can be used as the cleaning liquid.

[0024] [Bottom treatment liquid supply unit] The bottom treatment liquid supply unit 30 supplies treatment liquid L to the bottom surface b of the substrate W. The bottom treatment liquid supply unit 30 includes a nozzle head 31, a bottom discharge nozzle 32, a bottom supply pipe 33, a treatment liquid supply source 34, a heating unit 35, piping 36, a pump 36a, three on / off valves 37a, 37b, and 37c, a flow rate adjustment unit 38, and a cleaning liquid discharge nozzle 39.

[0025] The nozzle head 31 is located inside the rotating body 11 and is attached to the upper part of the retaining cylinder 131. Therefore, the nozzle head 31 does not rotate even when the rotating body 11 rotates. The nozzle head 31 has a recess 311 and a drain hole 312.

[0026] The recess 311 is provided so as to face the lower surface b of the substrate W held by the rotating holding part 10. The recess 311 is a recess in the upper surface of the nozzle head 31. The recess 311 has an inverted conical shape with an open upper surface. That is, the recess 311 has an inclined surface and gradually narrows from top to bottom. The central axis of the recess 311 is arranged to be coaxial with the rotation axis of the substrate W. The recess 311 receives the processing liquid L discharged from the lower surface discharge nozzle 32 and falling. A drain hole 312 is formed at the lowest end of the inclined surface of the recess 311. That is, the drain hole 312 opens into the recess 311 and communicates with the recess 311. The drain hole 312 is also connected to the upper end of the drain passage 313 of the holding cylinder 131. As a result, the processing liquid L received in the recess 311 is discharged through the drain hole 312 and the drain passage 313.

[0027] The bottom discharge nozzle 32 discharges the processing liquid L toward the center of the bottom surface b of the substrate W. The bottom discharge nozzle 32 is positioned below the bottom surface b of the substrate W held by the rotating holding unit 10. In a plan view, the bottom discharge nozzle 32 is positioned offset from the center of the substrate W. Therefore, the bottom discharge nozzle 32 is positioned diagonally with respect to the rotation axis of the rotating body 11 so that the processing liquid L can be discharged toward the center of the bottom surface b of the substrate W. The bottom discharge nozzle 32 is provided in the recess 311 of the nozzle head 31.

[0028] The bottom supply pipe 33 is a passage through which the processing liquid L flows, and is piping for supplying the processing liquid L to the bottom discharge nozzle 32. One end of the bottom supply pipe 33 is connected to the bottom of the bottom discharge nozzle 32. The bottom supply pipe 33 is provided to penetrate the thickened portion of the retaining cylinder 131 and extend to the outside of the rotating body 11. The other end of the bottom supply pipe 33 is connected to the on / off valve 37a. When the on / off valve 37a is opened, the processing liquid L is supplied to the bottom supply pipe 33. Then, it is supplied from the bottom supply pipe 33 to the bottom discharge nozzle 32, and the processing liquid L is discharged from the bottom discharge nozzle 32.

[0029] The processing liquid supply source 34 is a tank or the like that stores the processing liquid L. A pipe 36 is connected to the processing liquid supply source 34. The processing liquid supply source 34 has an outlet 341, which is an opening for the processing liquid L to flow out into the pipe 36, and an inlet 342, which is an opening for the processing liquid L to flow in from the pipe 36. The processing liquid supply source 34 sends the processing liquid L to the pipe 36 via the outlet 341. The processing liquid supply source 34 also receives the inflow of processing liquid L from the pipe 36 via the inlet 342.

[0030] The heating unit 35 heats the processing liquid L supplied from the processing liquid supply source 34 to a predetermined temperature, which is a preset temperature. The predetermined temperature is the same as the temperature supplied to the upper surface t of the substrate W, for example, 160°C.

[0031] The piping 36 is a passage through which the processing liquid L flows. The piping 36 circulates the processing liquid L stored in the processing liquid supply source 34 and supplies the processing liquid L heated by the heating unit 35 to the lower supply pipe 33. The piping 36 includes a discharge pipe 361, a circulation pipe 362, a branch pipe 363, and a flow rate adjustment pipe 364.

[0032] The discharge pipe 361 is the pipe through which the processed liquid L flows from the processed liquid supply source 34. One end of the discharge pipe 361 is connected to the outlet 341 of the processed liquid supply source 34. The other end of the discharge pipe 361 is branched, and the circulation pipe 362 and the branch pipe 363 are connected to it. The discharge pipe 361 is also connected to the flow rate adjustment pipe 364. A pump 36a and a heating unit 35 are provided in the middle of the discharge pipe 361. The heating unit 35 is located downstream of the pump 36a in the discharge pipe 361. The pump 36a sends the processed liquid L stored in the processed liquid supply source 34 to the discharge pipe 361. The processed liquid L flowing through the discharge pipe 361 due to the drive of the pump 36a is heated to a predetermined temperature by the heating unit 35.

[0033] The circulation piping 362 is for returning the processed liquid L supplied from the processed liquid supply source 34 back to the processed liquid supply source 34. One end of the circulation piping 362 is connected to the discharge piping 361. The other end of the circulation piping 362 is connected to the inlet 342 of the processed liquid supply source 34. As a result, the processed liquid L supplied from the processed liquid supply source 34 flows through the discharge piping 361 and the circulation piping 362, making it circulatory. An on / off valve 37b is provided in the middle of the circulation piping 362. When the processed liquid L is not being discharged from the bottom discharge nozzle 32, the on / off valve 37b is opened, and the processed liquid L is circulated through the circulation piping 362. Even when the processed liquid L is not being discharged from the bottom discharge nozzle 32, the processed liquid L is heated by the heating unit 35 while being circulated, maintaining a predetermined temperature. On the other hand, when the processed liquid L is being discharged from the bottom discharge nozzle 32, the on / off valve 37b is closed.

[0034] The branch pipe 363 is a pipe that supplies the processing liquid L to the bottom supply pipe 33. One end of the branch pipe 363 is connected to the discharge pipe 361. The other end of the branch pipe 363 is connected to the on / off valve 37a. This allows the processing liquid L supplied from the processing liquid supply source 34 to flow through the discharge pipe 361 and the branch pipe 363, and to be supplied to the bottom supply pipe 33 via the on / off valve 37a. The supply and cessation of the processing liquid L from the branch pipe 363 to the bottom supply pipe 33 are controlled by opening and closing the on / off valve 37a.

[0035] The flow rate adjustment pipe 364 is a pipe for adjusting the flow rate of the processed liquid L supplied from the branch pipe 363 to the bottom supply pipe 33. One end of the flow rate adjustment pipe 364 is connected to the discharge pipe 361 downstream of the heating section 35. The other end of the flow rate adjustment pipe 364 is connected to the circulation pipe 362 downstream of the on / off valve 37b. The flow rate adjustment pipe 364 is the flow path through which the processed liquid L flows when the processed liquid L is discharged from the bottom discharge nozzle 32. The flow rate adjustment pipe 364 is provided with an on / off valve 37c and a flow rate adjustment section 38. In the flow rate adjustment pipe 364, the flow rate adjustment section 38 is provided downstream of the on / off valve 37c. The on / off valve 37c is in an open state when the processed liquid L is discharged from the bottom discharge nozzle 32 and in a closed state when it is not discharged.

[0036] The flow rate adjustment unit 38 is, for example, a needle valve, which adjusts the flow rate of the processing liquid L discharged from the lower discharge nozzle 32. Specifically, by opening the on / off valves 37a and 37c, the flow rate of the processing liquid L flowing through the flow rate adjustment pipe 364 is adjusted, thereby adjusting the flow rate of the processing liquid L that flows through the branch pipe 363 and the lower supply pipe 33 and is discharged from the lower discharge nozzle 32. The discharge height of the processing liquid L is determined by the flow rate of the processing liquid L discharged from the lower discharge nozzle 32. The discharge height of the processing liquid L is the highest point in the trajectory of the processing liquid L discharged upward (diagonally upward in this embodiment) from the lower discharge nozzle 32.

[0037] Furthermore, in this embodiment, the on / off valve 37a is located on the outside of the rotating body 11. As a result, the heating unit 35 for heating the processing liquid L and the piping 36 for supplying the heated processing liquid L to the lower supply pipe 33 are also located on the outside of the rotating body 11. That is, the processing liquid L, after being heated in the heating unit 35, passes through the lower supply pipe 33, which has a length at least equal to or greater than the length in the rotation axis direction of the rotating body 11, and is discharged from the lower discharge nozzle 32.

[0038] The cleaning liquid discharge nozzle 39 discharges cleaning liquid toward the lower surface b of the substrate W. The cleaning liquid discharge nozzle 39 is connected to a cleaning liquid supply source (not shown) via a cleaning liquid supply pipe (not shown). Carbonated water or pure water can be used as the cleaning liquid. The cleaning liquid discharge nozzle 39 is positioned offset from the center of the substrate W in a plan view. Therefore, the cleaning liquid discharge nozzle 39 is positioned diagonally with respect to the rotation axis of the rotating body 11 so that the cleaning liquid can be discharged near the center of the lower surface b of the substrate W. The cleaning liquid discharge nozzle 39 is provided in the recess 311 of the nozzle head 31. Furthermore, as shown in Figure 3, the cleaning liquid discharge nozzle 39 is provided in a position in the recess 311 that does not face the lower surface discharge nozzle 32. That is, in a plan view, the cleaning liquid discharge nozzle 39 is provided in a position that is off the straight line passing through the lower surface discharge nozzle 32 and the center of the recess 311 (drain hole 312).

[0039] (Control device) The control device 40 controls various parts of the substrate processing apparatus 1. The control device 40 has a processor that executes programs to realize various functions of the substrate processing apparatus 1, a memory that stores various information such as programs and operating conditions, and drive circuits that drive each element. In other words, the control device 40 controls the rotation holding unit 10, the upper surface processing liquid supply unit 20, the lower surface processing liquid supply unit 30, and so on.

[0040] The control device 40 controls the on / off valves 37a, 37b, 37c and the flow rate adjustment unit 38 of the bottom processing liquid supply unit 30 to control the discharge / stopping of the processing liquid L from the bottom discharge nozzle 32 and the discharge height of the processing liquid L. When the processing liquid L is not to be discharged from the bottom discharge nozzle 32, the control device 40 controls the on / off valves 37a and 37c to the closed state and the on / off valve 37b to the open state. As a result, as shown in Figure 4, the processing liquid L circulates through the delivery pipe 361 and the circulation pipe 362. Therefore, the processing liquid L circulating in the pipe 36 (delivery pipe 361 and circulation pipe 362) is heated by the heating unit 35 and maintained at a predetermined temperature.

[0041] On the other hand, when discharging the processing liquid L from the lower discharge nozzle 32, the control device 40 controls the on / off valve 37b to the closed state and the on / off valves 37a and 37c to the open state. By controlling the on / off valves 37a, 37b and 37c in this way, the processing liquid L flows from the branch pipe 363 to the lower supply pipe 33, and the processing liquid L is discharged from the lower discharge nozzle 32.

[0042] The control device 40 comprises a temperature rise control unit 41 and a processing control unit 42. The temperature rise control unit 41 performs temperature rise control, and the processing control unit 42 performs processing control. Both temperature rise control and processing control control involve discharging the processing liquid L from the lower discharge nozzle 32, but the discharge height of the processing liquid L differs.

[0043] The temperature rise control is a control mechanism that raises the temperature of the lower supply pipe 33 to approximately the same temperature as the processing liquid L discharged during processing control. As shown in Figure 5, the temperature rise control discharges the processing liquid L to a height that does not reach the lower surface b of the substrate W. Therefore, the temperature rise control unit 41 controls the flow rate adjustment unit 38 so that the discharge height of the processing liquid L does not reach the lower surface b of the substrate W. In the state of temperature rise control, the processing liquid L does not reach the lower surface b of the substrate W, so processing of the lower surface b of the substrate W is not started. Furthermore, in temperature rise control, it is preferable that the temperature rise control unit 41 controls the flow rate by the flow rate adjustment unit 38 so that the processing liquid L discharged from the lower discharge nozzle 32 lands in the recess 311 of the nozzle head 31. By controlling in this way, it is possible to prevent the processing liquid L from splashing onto the rotating body 11, etc.

[0044] As shown in Figure 2, the processing control is a control that discharges the processing liquid L to a height where it reaches the lower surface b of the substrate W, and processes the lower surface b of the substrate W. The processing control unit 42 increases the flow rate compared to when temperature rise control is being performed and controls the flow rate adjustment unit 38 so that the discharge height of the processing liquid L reaches the lower surface b of the substrate W.

[0045] [Processing method] The operation of the substrate processing apparatus 1 of this embodiment, as described above, will be explained with reference to the flowchart in Figure 6, in addition to Figures 1 to 5 above. Note that a substrate processing method that processes the substrate W according to the following procedure is also one aspect of this embodiment.

[0046] As shown in Figure 4, the control device 40 controls the on / off valves 37a and 37c to be in the closed state and the on / off valve 37b to be in the open state in advance, so that the processing liquid L circulates within the piping 36. That is, the processing liquid L passes through the heating section 35 and is maintained at a predetermined temperature in advance.

[0047] The substrate W to be processed is a substrate on which a film such as a silicon nitride film or a silicon oxide film is formed. In this embodiment, both the upper surface t and the lower surface b of the substrate W are etched. First, the holding member 12 opens, the substrate W mounted on the hand of the transport robot is loaded, and the holding member 12 closes, so that the outer edge of the substrate W is held by the holding member 12 (step S01). Then, the rotating body 11 rotates, and the substrate W rotates (step S02).

[0048] Subsequently, the process is divided into steps S03 to S08, which process the upper surface t of the substrate W, and steps S09 to S16, which process the lower surface b of the substrate W. In this embodiment, as shown in Figure 1, the processing of the upper surface t and the lower surface b of the substrate W is performed simultaneously, so steps S03 to S08 and steps S09 to S16 are performed in parallel.

[0049] First, the processing flow for the upper surface t of the substrate W will be explained. A pre-rinse treatment is performed on the upper surface t of the substrate W (step S03). This pre-rinse treatment is a preparatory step for the etching treatment of the substrate W. The upper surface treatment liquid supply unit 20 discharges cleaning liquid from the cleaning liquid discharge nozzle toward the upper surface t of the substrate W and starts the pre-rinse treatment of the upper surface t of the substrate W. This pre-rinse treatment is performed until a predetermined time has elapsed (step S04 No). The predetermined time is, for example, 30 seconds.

[0050] Once a predetermined time has elapsed (Step S04 Yes), etching is performed on the upper surface t of the substrate W (Step S05). The upper surface treatment liquid supply unit 20 discharges the treatment liquid L from the upper surface discharge nozzle 21 toward the upper surface t of the substrate W and starts etching the upper surface t of the substrate W. This etching is performed until a predetermined time has elapsed (Step S06 No). Once the predetermined time has elapsed (Step S06 Yes), the discharge of the treatment liquid L from the upper surface discharge nozzle 21 is stopped and the etching is completed.

[0051] Finally, cleaning fluid is discharged onto the upper surface t of the substrate W, and rinsing is performed (step S07). That is, cleaning fluid is discharged from the cleaning fluid discharge nozzle toward the upper surface t of the substrate W, and rinsing of the upper surface t of the substrate W is started. The rinsing is performed until a predetermined time has elapsed (step S08 No). Once the predetermined time has elapsed (step S08 Yes), the rinsing is finished, and the processing of the upper surface t of the substrate W is completed.

[0052] Meanwhile, the processing of the lower surface b of the substrate W is carried out in parallel with the processing of the upper surface t of the substrate W. When the rotation of the substrate W begins (step S02), the processing of the lower surface b of the substrate W proceeds to step S09. In the processing of the lower surface b of the substrate W, the pre-rinsing process and temperature control are performed in parallel with the preparation process (pre-rinsing process) of the upper surface t of the substrate W.

[0053] First, a cleaning solution is supplied to the lower surface b of the substrate W to perform a pre-rinse treatment on the lower surface b of the substrate W (step S09). The cleaning solution discharge nozzle 39 of the lower surface treatment solution supply unit 30 discharges the cleaning solution to the lower surface b of the substrate W to perform a pre-rinse treatment on the lower surface b of the substrate W. At this time, as shown in Figure 4, the control device 40 controls the on / off valves 37a and 37c to be in the closed state and the on / off valve 37b to be in the open state, so that the treatment solution L circulates in the delivery pipe 361 and the circulation pipe 362. That is, the treatment solution L passes through the heating unit 35 and is maintained at a predetermined temperature. The pre-rinse treatment is performed until a predetermined time has elapsed (step S10 No). The predetermined time is, for example, 15 seconds.

[0054] Once a predetermined time has elapsed (step S10 Yes), the temperature rise control unit 41 executes temperature rise control (step S11). Specifically, as shown in Figure 5, the temperature rise control unit 41 controls the on / off valves 37a and 37c to the open state and the on / off valve 37b to the closed state. The temperature rise control unit 41 also controls the flow rate adjustment unit 38 so that the discharge height of the processing liquid L does not reach the lower surface b of the substrate W.

[0055] The processing liquid L, heated by the heating unit 35 to a predetermined temperature, passes through the lower supply pipe 33 and heads toward the lower discharge nozzle 32. The lower supply pipe 33 is heated by heat conduction from the heated processing liquid L as it flows through it. In the temperature control, the processing liquid L is discharged only to a height that does not reach the lower surface b of the substrate W, so etching of the lower surface b of the substrate W is not performed.

[0056] The temperature rise control is performed until a predetermined time has elapsed until the temperature of the lower supply pipe 33 is approximately the same as the temperature of the processing liquid L discharged during processing control (Step S12 No). The predetermined time is, for example, 15 seconds. After the temperature rise control has been performed for the predetermined time (Step S12 Yes), the temperature of the lower supply pipe 33 has risen to approximately the same temperature as the processing liquid L circulating in the piping 36. That is, even when the processing liquid L heated to the predetermined temperature passes through the lower supply pipe 33, the temperature of the processing liquid L does not decrease.

[0057] The pre-rinsing process (step S09) and temperature control (step S11) on the lower surface b of the substrate W are performed in parallel with the pre-rinsing process (step S03) on the upper surface t of the substrate W. In other words, the sum of the processing times for the pre-rinsing process (step S09) and temperature control (step S11) on the lower surface b of the substrate W is equal to the processing time for the pre-rinsing process (step S03) on the upper surface t of the substrate W.

[0058] In the above example, the pre-rinsing process (step S09) and temperature control (step S11) in the processing of the lower surface b were performed for 15 seconds each, and the combined time of the pre-rinsing process and temperature control was made the same as the preparation process (pre-rinsing process) of the upper surface t. However, the time is not limited to this, as long as the temperature of the lower surface supply pipe 33 can be raised to approximately the same temperature as the processing liquid L discharged during processing control. For example, the pre-rinsing process (step S09) could be 10 seconds and the temperature control (step S11) 20 seconds. Also, although the total preparation time was set to 30 seconds, the preparation time can be shorter or longer.

[0059] After performing temperature control for a predetermined time, the processing control unit 42 executes processing control (step S13). The bottom processing liquid supply unit 30 discharges processing liquid L from the bottom discharge nozzle 32 onto the bottom surface b of the substrate W, performing etching on the bottom surface b of the substrate W. As shown in Figure 2, the processing control unit 42 opens the on / off valves 37a and 37c and closes the on / off valve 37b, and controls the flow rate adjustment unit 38 so that the discharge height of the processing liquid L reaches the bottom surface b of the substrate W.

[0060] The processing control is performed continuously from the temperature rise control. Performing it continuously means that the transition from temperature rise control to processing control is made without stopping the discharge of the processing liquid L from the bottom discharge nozzle 32. In other words, there is no time when the processing liquid L is not flowing through the bottom supply pipe 33 during the transition from temperature rise control to processing control. The temperature rise control unit 41 does not close the on / off valve 37a even after the temperature rise control is completed, and the processing control unit 42 controls the flow rate adjustment unit 38 while the on / off valve 37a remains open. Therefore, when transitioning from temperature rise control to processing control, the temperature of the bottom supply pipe 33, which was heated by the temperature rise control, is suppressed from dropping.

[0061] The process control (etching process) is performed until a predetermined time has elapsed (Step S14 No). Once the predetermined time has elapsed (Step S14 Yes), the discharge of the processing liquid L from the bottom discharge nozzle 32 is stopped. The process control unit 42 closes the on / off valves 37a and 37c and opens the on / off valve 37b, thereby stopping the discharge of the processing liquid L from the bottom discharge nozzle 32, and the processing liquid L circulates within the piping 36. This completes the etching process on the bottom surface b of the substrate W. Note that the etching process on the bottom surface b of the substrate W (Step S13) is performed in parallel with the etching process on the top surface t of the substrate W (Step S05).

[0062] Finally, cleaning solution is discharged onto the lower surface b of the substrate W, and rinsing is performed (step S15). That is, cleaning solution is discharged from the cleaning solution discharge nozzle 39 of the lower surface treatment solution supply unit 30 onto the lower surface b of the substrate W, and rinsing of the lower surface b of the substrate W is started. The rinsing is performed until a predetermined time has elapsed (step S16 No). Once the predetermined time has elapsed (step S16 Yes), the rinsing is finished, and the treatment of the lower surface b of the substrate W is completed.

[0063] When the rinsing of the upper surface t and the lower surface b of the substrate W is completed (step S08 Yes, step S16 Yes), the rotating body 11 stops rotating, and the rotation of the substrate W stops (step S17). When the rotation of the substrate W stops, the hand of the transport robot is inserted below the substrate W, the holding member 12 opens, the substrate W is released, the substrate W is placed on the hand of the transport robot, and the substrate W is transported out of the substrate processing apparatus 1 (step S18).

[0064] [effect] (1) As described above, the substrate processing apparatus 1 of this embodiment includes a rotating holding unit 10 for holding and rotating a substrate W, a bottom discharge nozzle 32 for discharging a processing liquid L toward the bottom surface b of the substrate W, a bottom supply pipe 33 connected to the bottom discharge nozzle 32, a heating unit 35 for heating the processing liquid L supplied to the bottom supply pipe 33, a flow rate adjustment unit 38 for adjusting the flow rate of the processing liquid L discharged from the bottom discharge nozzle 32, and a control device 40 for controlling the flow rate adjustment unit 38. The control device 40 includes a temperature rise control unit 41 that controls the flow rate adjustment unit 38 to discharge the processing liquid L to a height that does not reach the bottom surface b of the substrate W while the rotating holding unit 10 is holding the substrate W, and raises the temperature of the bottom supply pipe 33, and a processing control unit 42 that controls the flow rate adjustment unit 38 to discharge the processing liquid L to a height that reaches the bottom surface b of the substrate W after the temperature of the bottom supply pipe 33 has been raised, and processes the substrate W.

[0065] Furthermore, the substrate processing method of this embodiment includes a holding step of holding the substrate W, a rotating step of rotating the substrate W, a heating step of adjusting the flow rate of the heated processing liquid L discharged from the lower discharge nozzle 32 connected to the lower supply pipe 33 to a height that does not reach the lower surface b of the substrate W, after the holding step, and heating the lower supply pipe 33, and a processing step of processing the substrate W, adjusting the flow rate of the processing liquid L discharged from the lower discharge nozzle 32 to a height that reaches the lower surface b of the substrate W, after the heating step.

[0066] In this way, the lower supply pipe 33 can be heated by the temperature control unit 41 in the preliminary stage before processing the substrate W. Furthermore, in the temperature control, the discharge height of the processing liquid L discharged from the lower discharge nozzle 32 is such that it does not reach the lower surface b of the substrate W, so the processing liquid L is not supplied to the substrate W. Therefore, the processing of the lower surface b of the substrate W does not proceed due to the processing liquid L, thus preventing the substrate W from being processed at a low processing rate.

[0067] Then, the lower surface b of the substrate W is processed by the processing control unit 42. At this time, the lower surface supply pipe 33 is heated by the temperature rise control, so a decrease in the temperature of the processing liquid L supplied to the lower surface b of the substrate W can be suppressed during processing control. Therefore, a high processing rate can be maintained during the processing of the lower surface b of the substrate W.

[0068] Furthermore, since the temperature rise control is performed while the substrate W is held, the process can be immediately switched to processing control after the temperature rise control is complete. Therefore, it is possible to suppress the decrease in the temperature of the heated lower supply pipe 33 when transitioning from temperature rise control to processing control.

[0069] (2) The nozzle head 31 further comprises a recess 311 provided facing the lower surface b of the substrate W, and a drain hole 312 opening into the recess 311. The lower discharge nozzle 32 is provided on the nozzle head 31, and the temperature rise control unit 41 controls the flow rate adjustment unit 38 so that the processing liquid L discharged from the lower discharge nozzle 32 lands in the recess 311. This prevents the processing liquid L from splashing onto each component of the substrate processing apparatus 1, such as the rotating body 11, and prevents the processing liquid from adhering to the substrate W from each component.

[0070] (3) After the temperature rise control unit 41 controls the flow rate adjustment unit 38, the processing control unit 42 controls the flow rate adjustment unit 38 without stopping the discharge of the processing liquid L to process the substrate W. That is, the processing liquid L continues to flow through the bottom supply pipe 33 even while transitioning from temperature rise control to processing control. This prevents the temperature of the heated bottom supply pipe 33 from dropping during the transition from temperature rise control to processing control. Therefore, the decrease in the temperature of the processing liquid L during processing control can be suppressed more effectively.

[0071] (4) The processing solution L is an etching solution. This suppresses a decrease in the temperature of the etching solution when controlling the processing of the lower surface b of the substrate W. Therefore, it is possible to maintain a high etching rate while processing on the lower surface b of the substrate W.

[0072] (5) The substrate W is further equipped with an upper discharge nozzle 21 that discharges processing liquid L toward the upper surface t, and the processing control unit 42 discharges processing liquid L from the upper discharge nozzle 21. In this way, processing is performed on both the upper surface t and the lower surface b of the substrate W in parallel. If the temperature of the processing liquid L supplied to the lower surface b of the substrate W is lower than the temperature of the processing liquid L supplied to the upper surface t, there is a risk that the temperature of the processing liquid L supplied to the upper surface t will decrease due to heat conduction to the processing liquid L supplied to the lower surface b, corresponding to the area on the lower surface b that has received discharge of processing liquid L. If the temperature of the processing liquid L on the upper surface t decreases, the temperature distribution of the processing liquid L supplied to the upper surface t will become uneven, and the processing rate within the plane of the upper surface t will become uneven.

[0073] On the other hand, in this embodiment, the lower supply pipe 33 is heated by temperature rise control, which suppresses a decrease in the temperature of the processing liquid L discharged onto the lower surface b of the substrate W during processing control. Therefore, the temperature of the processing liquid L discharged onto the upper surface t of the substrate W is suppressed by the processing liquid L discharged onto the lower surface b of the substrate W. As a result, the temperature distribution of the processing liquid L discharged onto the upper surface t of the substrate W becomes uniform, and the processing rate within the plane of the upper surface t is maintained.

[0074] (6) The temperature of the processing liquid L supplied to the lower supply pipe 33 by the temperature rise control unit 41 controlling the flow rate adjustment unit 38 is equal to or greater than the temperature of the processing liquid L supplied to the lower supply pipe 33 by the processing control unit 42 controlling the flow rate adjustment unit 38. In this embodiment, the temperature of the processing liquid L supplied to the lower supply pipe 33 by temperature rise control and the temperature of the processing liquid L supplied to the lower supply pipe 33 by processing control are the same predetermined temperature. Therefore, the temperature of the lower supply pipe 33 can be raised quickly, improving the efficiency of temperature rise control. In addition, the temperature of the lower supply pipe 33 can be raised to approximately the same level as the temperature of the processing liquid L discharged during processing control, and a decrease in the temperature of the processing liquid L passing through the lower supply pipe 33 can be suppressed.

[0075] (7) The temperature rise control unit 41 controls the flow rate adjustment unit 38 until the temperature of the lower supply pipe 33 or the temperature of the processing liquid L flowing through the lower supply pipe 33 is equal to or higher than a preset temperature. In this embodiment, temperature rise control is performed for a predetermined time until the temperature of the lower supply pipe 33 is approximately the same as the temperature of the processing liquid L discharged during processing control. This makes it possible to raise the temperature of the lower supply pipe 33 to approximately the same as the temperature of the processing liquid L discharged during processing control, and to suppress a decrease in the temperature of the processing liquid L passing through the lower supply pipe 33.

[0076] [Second Embodiment] The substrate processing apparatus 1 of the second embodiment will be described with reference to the drawings. Note that components and functions identical to those of the first embodiment are denoted by the same reference numerals, and detailed descriptions are omitted. In the first embodiment, temperature control was performed while the substrate W was loaded, held, and rotated; however, in the second embodiment, temperature control is performed before loading the substrate W.

[0077] Specifically, as shown in Figure 7, the substrate processing apparatus 1 first performs temperature control using the temperature rise control unit 41 of the control device 40 (step 20). That is, the temperature of the lower supply pipe 33 is raised while the holding member 12 is not holding the substrate W. As shown in Figure 8, the temperature rise control unit 41 may also control the flow rate adjustment unit 38 to discharge the processing liquid L to a height that reaches the lower surface b of the substrate W when the substrate W is held. Even if the control device 40 controls the flow rate adjustment unit 38 in this way, the substrate W is not held by the holding member 12, so processing of the substrate W will not start. Note that in Figure 8, there is no actual substrate W, but the substrate W is shown with a dotted line to illustrate the discharge height of the processing liquid L.

[0078] However, the temperature rise control unit 41 controls the flow rate adjustment unit 38 so that the discharged processing liquid L lands in the recess 311 of the nozzle head 31. That is, during temperature rise control, the processing liquid L discharged from the lower discharge nozzle 32 is received by the recess 311 and discharged through the drain hole 312 and the drain passage 313. The flow rate control of the flow rate adjustment unit 38 can be performed based on the angle of the lower discharge nozzle 32 and the size of the recess 311.

[0079] The temperature rise control is performed until a predetermined time has elapsed (Step S21 No). Once the predetermined time has elapsed (Step S21 Yes), the substrate W is loaded, the outer edge of the substrate W is held by the holding member 12 (Step S01), the rotating body 11 rotates, and the substrate W rotates (Step S02). Then, as in the first embodiment, etching is performed on both the upper surface t and the lower surface b of the substrate W. In the processing of the lower surface b of the substrate W, since the temperature rise control has already been performed, after the substrate pre-rinsing process (Step S09) is performed, processing control, i.e., etching (Step S13), is performed immediately. Once the processing of both the upper surface t and the lower surface b of the substrate W is completed, the rotation of the substrate W is stopped (Step S17), the substrate is released, and it is transported out of the substrate processing apparatus 1 (Step S18).

[0080] As described above, the substrate processing apparatus 1 of this embodiment includes a rotating holding unit 10 for holding and rotating a substrate W, a nozzle head 31 having a recess 311 provided so as to face the lower surface b of the substrate W held by the rotating holding unit 10, and a drain hole 312 opening into the recess 311, a lower discharge nozzle 32 for discharging processing liquid L toward the lower surface b of the substrate W, a lower supply pipe 33 connected to the lower discharge nozzle 32, a heating unit 35 for heating the processing liquid L supplied to the lower supply pipe 33, and the flow rate of the processing liquid L discharged from the lower discharge nozzle 32. The system includes a flow rate adjustment unit 38 for adjusting the flow rate, and a control device 40 for controlling the flow rate adjustment unit 38. The control device 40 includes a temperature control unit 41 that controls the flow rate adjustment unit 38 so that the processing liquid L discharged from the lower discharge nozzle 32 lands in the recess 311 and raises the temperature of the lower supply pipe 33, and a processing control unit 42 that, after raising the temperature of the lower supply pipe 33, controls the flow rate adjustment unit 38 so that the processing liquid L is discharged to a height where the lower discharge nozzle 32 reaches the lower surface b of the substrate W while the rotating holding unit 10 holds the substrate W, and processes the substrate W.

[0081] Furthermore, the substrate processing method of this embodiment includes a heating step of heating the lower supply pipe 33 by discharging heated processing liquid L from a lower discharge nozzle 32 connected to the lower supply pipe 33, a holding step of holding the substrate W, a rotation step of rotating the substrate W, and a processing step of processing the substrate W by adjusting the flow rate of the processing liquid L discharged from the lower discharge nozzle 32 so that the processing liquid L is discharged from the lower discharge nozzle 32 to a height that reaches the lower surface b of the substrate W. In the heating step, a drain hole 312 is opened, and the flow rate of the processing liquid L discharged from the lower discharge nozzle 32 is adjusted so that the processing liquid L discharged from the lower discharge nozzle 32 lands in a recess 311 facing the lower surface b of the substrate W.

[0082] This allows the lower supply pipe 33 to be heated during temperature rise control, thereby suppressing a decrease in the temperature of the processing liquid L during processing control. Furthermore, during temperature rise control, the flow rate of the processing liquid L discharged from the lower discharge nozzle 32 is adjusted so that it lands in the recess 311 of the nozzle head 31. As a result, it is possible to prevent the processing liquid L from splashing onto components such as the rotating body 11, thereby preventing contamination of the components of the substrate processing apparatus 1.

[0083] [Differentiation] (1) The bottom processing liquid supply unit 30 may have a flow rate detection unit that detects the flow rate of the processing liquid L discharged from the bottom discharge nozzle 32. The flow rate detection unit may be provided in the bottom supply pipe 33. The temperature rise control unit 41 controls the flow rate adjustment unit 38 based on the flow rate of the processing liquid L detected by the flow rate detection unit. As a result, if the flow rate of the processing liquid L is greater than a predetermined value, the temperature rise control unit 41 can control the flow rate of the processing liquid L discharged from the bottom discharge nozzle 32 by using the flow rate adjustment unit 38 to reduce it. Also, if the flow rate of the processing liquid L is less than a predetermined value, the temperature rise control unit 41 can control the flow rate of the processing liquid L discharged from the bottom discharge nozzle 32 by using the flow rate adjustment unit 38 to increase it. Therefore, in temperature rise control, the bottom supply pipe 33 can be heated efficiently while the discharge height of the processing liquid L can be controlled more accurately to a height that does not reach the bottom surface b of the substrate W or a height that lands in the recess 311 of the nozzle head 31.

[0084] Furthermore, not only the temperature rise control unit 41 but also the processing control unit 42 may control the flow rate adjustment unit 38 based on the detection result of the flow rate detection unit. This allows for more accurate control of the flow rate of the processing liquid L even during processing control. As a result, the flow rate of the processing liquid L supplied to the lower surface b of the substrate W can be accurately controlled, and the substrate W can be processed.

[0085] (2) The bottom treatment liquid supply unit 30 may have a temperature detection unit that detects the temperature of the treatment liquid L or the bottom supply pipe 33. The temperature detection unit may be provided in the bottom supply pipe 33. The temperature rise control unit 41 terminates the temperature rise control when the temperature detected by the temperature detection unit reaches a predetermined temperature (the same temperature as the treatment liquid L heated by the heating unit 35 and flowing through the pipe 36). This allows for efficient temperature rise control, thereby improving processing efficiency.

[0086] (3) The flow rate adjustment unit 38 is not limited to a needle valve. The flow rate adjustment unit 38 can be any device capable of adjusting the flow rate, for example, a mass flow controller. In this case, as shown in Figure 9, the piping 36 does not need to have a flow rate adjustment pipe 364. In this case, the circulation piping 362 is provided with a flow rate adjustment unit 38 instead of an on / off valve 37b. Therefore, the piping 36 can be made smaller and simpler.

[0087] (4) The processing control unit 42 has controlled the on / off valves 37a and 37c to be in the open state and the on / off valve 37b to be in the closed state during processing control, but it may also control the on / off valve 37a to be in the open state and the on / off valves 37b and 37c to be in the closed state. In other words, the on / off valve 37c may function as a flow rate adjustment unit 38 that adjusts the flow rate of the processing liquid L discharged from the bottom discharge nozzle 32. For example, the inner diameter of the flow rate adjustment pipe 364 can be adjusted so that when the on / off valves 37a and 37c are in the open state and the on / off valve 37b is in the closed state, the discharge height of the processing liquid L does not reach the bottom surface b of the substrate W. In this case, when the on / off valve 37a is in the open state and the on / off valves 37b and 37c are in the closed state, the discharge height of the processing liquid L will reach the bottom surface b of the substrate W.

[0088] (5) In the first embodiment described above, after temperature rise control, processing control was performed continuously without stopping the discharge of the processing liquid L. However, the temperature rise control unit 41 may stop the discharge of the processing liquid L once after temperature rise control, and then the processing control unit 42 may take over the processing control.

[0089] (6) In the first embodiment described above, the temperature rise control (step S11) is performed after the pre-rinsing process (step S09), but the pre-rinsing process (step S09) and the temperature rise control (step S11) may be performed in parallel. That is, the cleaning liquid may be discharged from the cleaning liquid discharge nozzle 39 toward the lower surface b of the substrate W, while the processing liquid L may be discharged from the lower surface discharge nozzle 32 to a height that does not reach the lower surface b of the substrate W. Here, as described above, the cleaning liquid discharge nozzle 39 is provided in a position in the recess 311 that does not face the lower surface discharge nozzle 32 (see Figure 3). Therefore, the cleaning liquid discharged from the cleaning liquid discharge nozzle 39 and the processing liquid L discharged from the lower surface discharge nozzle 32 do not interfere with each other, and the pre-rinsing process (step S09) and the temperature rise control (step S11) can be performed in parallel.

[0090] (7) When processing multiple substrates W, the time of the temperature rise control for the N+1 substrate W to be processed may be changed based on the elapsed time since the processing control of the Nth substrate W. That is, if the elapsed time since the processing control of the Nth substrate W is short, the time of the temperature rise control in the N+1th time is shortened, and if the elapsed time since the processing control of the Nth substrate W is long, the time of the temperature rise control in the N+1th time is lengthened. This allows the temperature rise control to be performed based on the temperature of the lower supply pipe 33, which decreases in temperature with the elapsed time since processing control, so the lower supply pipe 33 can be heated efficiently.

[0091] (8) In the above embodiment, the processing liquid L discharged by the temperature rise control and processing control was an etching solution, but it does not have to be an etching solution. Also, the processing liquid L discharged by the temperature rise control and the processing liquid L discharged by the processing control may be different.

[0092] (9) The substrate processing apparatus 1 is not limited to etching using an etching solution. Any substrate processing apparatus 1 that processes the lower surface b of the substrate W using a processing solution L that requires preheating is applicable.

[0093] (10) The temperature of the processing liquid L supplied to the bottom supply pipe 33 by the temperature rise control does not have to be the same as the temperature of the processing liquid L supplied to the bottom supply pipe 33 by the processing control. For example, the temperature of the processing liquid L supplied to the bottom supply pipe 33 by the temperature rise control may be higher than the temperature of the processing liquid L supplied to the bottom supply pipe 33 by the processing control. This allows the temperature of the bottom supply pipe 33 to rise quickly, improving the efficiency of the temperature rise control. In this case, the processing liquid L supplied to the bottom supply pipe 33 by the temperature rise control may be a different processing liquid L from the processing liquid L supplied to the bottom supply pipe 33 by the processing control. Furthermore, the temperature of the bottom supply pipe 33 can be set higher than the temperature of the processing liquid L discharged by the processing control, so the decrease in the temperature of the processing liquid L discharged from the bottom discharge nozzle 32 during processing control can be suppressed more effectively.

[0094] (11) The temperature rise control unit 41 may raise the temperature of the lower supply pipe 33 until the temperature of the processing liquid L flowing through the lower supply pipe 33 is approximately the same as the temperature of the processing liquid L discharged during processing control. In the above embodiment, the temperature rise control unit 41 performed temperature rise control on the lower supply pipe 33 until the temperature of the lower supply pipe 33 was approximately the same as the temperature of the processing liquid L discharged during processing control, but the temperature rise control may be performed until the temperature of the lower supply pipe 33 is higher than the temperature of the processing liquid L discharged during processing control. If temperature rise control and processing control are not performed continuously, there is a risk that the temperature of the heated lower supply pipe 33 will decrease during the time between temperature rise control and processing control. For this reason, the temperature of the lower supply pipe 33 is raised by temperature rise control while taking this temperature decrease into consideration. This makes it possible to suppress the temperature of the processing liquid L discharged during processing control from falling below a predetermined temperature.

[0095] (10) In the above embodiment, processing was performed on both the upper surface t and the lower surface b of the substrate W in parallel, but processing may be performed only on the lower surface b of the substrate W. Alternatively, processing may be performed on the upper surface t of the substrate W, and then on the lower surface b of the substrate W. In this case, processing efficiency is improved because the processing of the lower surface b of the substrate W can be performed without inverting the substrate W after the processing of the upper surface t of the substrate W is completed.

[0096] [Other embodiments] While embodiments of the present invention have been described herein, these embodiments are presented as examples and are not intended to limit the scope of the invention. The above embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the scope of the invention. Embodiments and their variations are included in the scope and essence of the invention, as well as in the claims and their equivalents. [Explanation of Symbols]

[0097] 1. Substrate processing device 10 Rotating holding part 11. Solids of revolution 11a Opposite surface 12 Retaining member 13 Drive unit 131 Holding tube 20 Top surface treatment liquid supply unit 21 Top discharge nozzle 22 Arms 23 Moving mechanism 30 Bottom treatment liquid supply unit 31 Nozzle head 311 Recess 312 Drainage hole 313 Drainage channel 32 Bottom discharge nozzle 33 Bottom supply pipe 34. Source of treatment liquid 341 Outlet 342 Inlet 35 Heating section 36 Piping 361 Delivery piping 362 Circulation piping 363 Branch piping 364 Flow rate adjustment piping 36a Pump 37a, 37b, 37c On / Off Valves 38 Flow rate adjustment section 39 Cleaning solution dispensing nozzle 40 Control device 41 Temperature Control Unit 42 Processing Control Unit

Claims

1. A rotating holding unit that holds and rotates the substrate, A bottom discharge nozzle that discharges processing liquid toward the lower surface of the substrate, A lower supply pipe connected to the lower discharge nozzle, A heating unit for heating the processing liquid supplied to the lower supply pipe, A flow rate adjustment unit that adjusts the flow rate of the processing liquid discharged from the lower discharge nozzle, A control device for controlling the flow rate adjustment unit, Equipped with, The control device is With the rotating holding unit holding the substrate, the flow rate adjustment unit controls the discharge of the processing liquid to a height that does not reach the lower surface of the substrate, and the temperature rise control unit raises the temperature of the lower supply pipe, After raising the temperature of the lower supply pipe, the flow rate adjustment unit controls the discharge of the processing liquid to a height that reaches the lower surface of the substrate, and the processing control unit performs the processing on the substrate. A substrate processing apparatus characterized by comprising:

2. A rotating holding unit that holds and rotates the substrate, A nozzle head having a recess provided so as to face the lower surface of the substrate held by the rotating holding part, and a drainage hole opening into the recess, A lower discharge nozzle is provided on the nozzle head for discharging processing liquid toward the lower surface of the substrate, A lower supply pipe connected to the lower discharge nozzle, A heating unit for heating the processing liquid supplied to the lower supply pipe, A flow rate adjustment unit that adjusts the flow rate of the processing liquid discharged from the lower discharge nozzle, A control device for controlling the flow rate adjustment unit, Equipped with, The control device is The flow rate adjustment unit controls the processing liquid discharged from the lower discharge nozzle so that it lands in the recess, and the temperature control unit raises the temperature of the lower supply pipe. After the lower supply pipe is heated, the rotation holding unit holds the substrate, and the flow rate adjustment unit controls the discharge of the processing liquid so that the lower discharge nozzle reaches a height where it reaches the lower surface of the substrate, and the processing control unit processes the substrate. A substrate processing apparatus characterized by comprising:

3. A nozzle head having a recess provided so as to face the lower surface of the substrate, and a drainage hole opening into the recess, Furthermore, The aforementioned lower discharge nozzle is provided on the nozzle head, The substrate processing apparatus according to claim 1, characterized in that the temperature rise control unit controls the flow rate adjustment unit so that the processing liquid discharged from the lower discharge nozzle lands in the recess.

4. The lower supply pipe is further provided with a flow rate detection unit for detecting the flow rate of the processing liquid, The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the temperature rise control unit controls the flow rate adjustment unit based on the flow rate detected by the flow rate detection unit.

5. The system further includes a temperature detection unit for detecting the temperature of the lower supply pipe or the temperature of the processing liquid flowing through the lower supply pipe. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the temperature rise control unit controls the flow rate adjustment unit based on the temperature detected by the temperature detection unit and terminates the temperature rise of the lower supply pipe.

6. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the processing control unit controls the flow rate adjustment unit without stopping the discharge of the processing liquid after the temperature rise control unit controls the flow rate adjustment unit to process the substrate.

7. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the processing solution is an etching solution.

8. The substrate is further equipped with an upper discharge nozzle that discharges the processing liquid toward the upper surface of the substrate, The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the processing control unit discharges the processing liquid from the upper discharge nozzle.

9. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the temperature of the processing liquid supplied to the lower supply pipe by the temperature rise control unit controlling the flow rate adjustment unit is equal to or greater than the temperature of the processing liquid supplied to the lower supply pipe by the temperature rise control unit controlling the flow rate adjustment unit.

10. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the temperature rise control unit controls the flow rate adjustment unit until the temperature of the lower supply pipe or the temperature of the processing liquid flowing through the lower supply pipe reaches or exceeds a preset temperature.

11. A holding process for holding the substrate, A rotation step of rotating the substrate, A heating step is performed after the holding step, in which the flow rate of the heated processing liquid discharged from the lower discharge nozzle connected to the lower supply pipe is adjusted so that the heated processing liquid is discharged from the lower discharge nozzle to a height that does not reach the lower surface of the substrate, and the lower supply pipe is heated. A processing step in which, after the heating step, the flow rate of the processing liquid discharged from the lower discharge nozzle is adjusted so that the processing liquid is discharged from the lower discharge nozzle to a height that reaches the lower surface of the substrate, and the substrate is processed, A substrate processing method characterized by including the following.

12. A heating step is performed to raise the temperature of the lower supply pipe by discharging heated processing liquid from a lower discharge nozzle connected to the lower supply pipe, A holding process for holding the substrate, A rotation step of rotating the substrate, A processing step of processing the substrate by adjusting the flow rate of the processing liquid discharged from the lower discharge nozzle so that the processing liquid is discharged from the lower discharge nozzle to a height that reaches the lower surface of the substrate, Includes, A substrate processing method characterized in that, in the heating step, a drainage hole is opened, and the flow rate of the processing liquid discharged from the bottom discharge nozzle is adjusted so that the processing liquid discharged from the bottom discharge nozzle lands in a recess facing the bottom surface of the substrate.

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