transistor

Abstract

To provide a semiconductor device that suppresses the effects of variations in transistor characteristics. [Solution] In a semiconductor device, the circuit 100 includes a transistor 101, a first wiring 21, a second wiring 22, a first switch 11, a second switch 12, a third switch 13, a first capacitive element 102, and a second capacitive element 103. The first switch selects conduction or non-conductivity between the first wiring and the first electrode of the first capacitive element, the first electrode of the first capacitive element is electrically connected to the first electrode of the second capacitive element, the second electrode of the first capacitive element is electrically connected to the gate of the transistor, and the second electrode of the second capacitive element is connected to either the source or the drain of the transistor. The second switch selects conduction or non-conductivity between the second wiring and the gate of the transistor, and the third switch selects conduction or non-conductivity between the first electrode of the first capacitive element and either the source or the drain of the transistor.

Description

[Technical Field]

[0001] This invention relates to a semiconductor device, a light-emitting device, or a display device, or a method for driving them. or relating to methods for manufacturing them. Examples of semiconductor devices include transistors. Examples of semiconductor devices having active elements, etc. Examples of light-emitting devices include electroluminescent devices. Examples include light-emitting devices having light-emitting elements such as luminescent elements (hereinafter referred to as EL elements). As a display device, for example, a display device having a light-emitting element such as an EL element or a display element. Examples include the placement of semiconductors. In particular, the present invention reduces the influence of variations in transistor characteristics. The present invention relates to a conductor device, a light-emitting device, a display device, or a method for driving them. [Background technology]

[0002] Display devices using light-emitting elements offer high visibility and are ideal for thin designs, but they also have limitations in terms of viewing angle. Because it lacks a display, it replaces CRT (cathode ray tube) and liquid crystal display devices. It is attracting attention as a device. Active matrix type display devices using light-emitting elements are The proposed configurations vary by manufacturer, but typically include at least a light-emitting element, A transistor (switching transistor) that controls the input of the video signal to the pixel, A transistor (driving transistor) that controls the current value supplied to the light-emitting element is located at each corner. It is provided as a basic feature.

[0003] For example, by making all the transistors provided in the pixel the same conductivity type, In the manufacturing process, steps such as adding impurity elements to impart conductivity to the semiconductor film are performed. Parts can be omitted. Patent Document 1 below describes a pixel using only n-channel transistors. This document describes the display device that is configured as such. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2003-195810 [Overview of the project] [Problems that the invention aims to solve]

[0005] By the way, in semiconductor devices such as light-emitting devices and display devices, the drain current of a transistor causes light to be emitted. Because it is supplied to the element, if variations occur in the characteristics of the transistors between pixels, This variation is also reflected in the brightness of display elements such as light-emitting elements. Therefore, for example, threshold By anticipating variations in voltage values, the current value of the transistor's drain current can be corrected. Proposing a new pixel configuration is an important challenge in improving the quality of semiconductor devices.

[0006] In view of the above-mentioned problems, one aspect of the present invention suppresses the influence of variations in transistor characteristics. One of the objectives is to provide semiconductor devices, light-emitting devices, or display devices. One aspect of the present invention relates to a semiconductor device in which the effects of degradation of transistor characteristics are suppressed, One objective is to provide an optical device or display device. Or, one aspect of the present invention. This suppresses variations in brightness due to variations in the threshold voltage of transistors, and is used in semiconductor devices. One of the objectives of this invention is to provide a light-emitting device or a display device. The embodiment is a semiconductor device in which variations in brightness due to variations in transistor mobility are suppressed. One of the objectives is to provide a light-emitting device or a display device. One aspect aims to provide a semiconductor device, a light-emitting device, or a display device that operates normally even when the transistor is a normally-off type. Or one aspect of the present invention aims to provide a semiconductor device, a light-emitting device, or a display device that can obtain the threshold voltage of the transistor even when the transistor is a normally-off type. Or one aspect of the present invention aims to provide a semiconductor device, a light-emitting device, or a display device that performs high-quality display. Or one aspect of the present invention aims to provide a semiconductor device, a light-emitting device, or a display device that performs display with less unevenness. Or one aspect of the present invention aims to provide a semiconductor device, a light-emitting device, or a display device that can realize a desired circuit with a small number of transistors. Or one aspect of the present invention aims to provide a semiconductor device, a light-emitting device, or a display device that can realize a desired circuit with a small number of wirings. Or one aspect of the present invention aims to provide a semiconductor device, a light-emitting device, or a display device in which the influence of deterioration of a light-emitting element is suppressed. Or one aspect of the present invention aims to provide a semiconductor device, a light-emitting device, or a display device that is manufactured with a small number of processes. Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention is not required to solve all of these problems. Note that other problems will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other problems from the description in the specification, drawings, claims, etc. [Means for Solving the Problems]

[0007] ​

[0008] One embodiment of the semiconductor device of the present invention includes a transistor, a first wiring, a second wiring, and a first A switch, a second switch, a third switch, a first capacitive element, and a second capacitive element The first switch has at least the first wiring and the pair of electrodes of the first capacitive element. It has the function of selecting between conduction and non-conductivity with one of the two. A pair of first capacitive elements One of the electrodes is electrically connected to one of the pair of electrodes of the second capacitive element. The other electrode of the pair of electrodes of the first capacitive element is electrically connected to the gate of the transistor. The other electrode of the pair of electrodes of the second capacitive element is the source and drain of the transistor. It is electrically connected to one side. The second switch is connected to the second wiring and the gate of the transistor. The third switch has the function of selecting conduction or non-conductivity between the first capacitive element. The electrical connection between one of the pair of electrodes and one of the source and drain of the transistor. Alternatively, it has a function to select non-conductivity.

[0009] In the semiconductor device with the above configuration, a transistor (hereinafter referred to as the driving transistor) is used to account for variations in the threshold voltage. The voltage applied between the source and gate of a transistor (sometimes called a transistor) can be corrected. Yes, it's possible. This way, the drain current of the transistor can be corrected.

[0010] One aspect of the semiconductor device of the present invention comprises a transistor, a load, a first wiring, a second wiring, and , a first switch, a second switch, a third switch, a first capacitive element, and a second The first switch has at least a capacitive element and a first wiring and a first capacitive element. It has the function of selecting conductivity or non-conductivity between one of the paired electrodes. One of the pair of electrodes of this child is electrically connected to one of the pair of electrodes of the second capacitive element. The process continues. One of the pair of electrodes of the first capacitive element is electrically connected to the gate of the transistor. It is connected to the load and the transistor's socket. It is electrically connected to either the outlet or the drain. The second switch is connected to the second wiring, It has the function of selecting conduction or non-conductivity between the transistor gate and the third switch. Chi is connected to one of the pair of electrodes of the first capacitive element and to the source and drain of the transistor. It has the function of selecting whether to conduct or not conduct with one of the two.

[0011] In the semiconductor device with the above configuration, a transistor (hereinafter referred to as the driving transistor) is used to account for variations in the threshold voltage. The voltage applied between the source and gate of a transistor (sometimes called a transistor) can be corrected. Yes, it is possible. In this way, the drain current of the transistor can be corrected. The drain current can be supplied to the load.

[0012] The load can be any element or circuit. For example, the load can be an EL element or other light-emitting element. It can be a child. Light-emitting elements such as EL elements have a current flowing between the anode and cathode of the light-emitting element. It emits light with a brightness proportional to the current value.

[0013] When using a light-emitting element as a load, one example is the following (Type A) or (Type B) ) can be configured as follows.

[0014] (Type A) In the semiconductor device according to one aspect of the present invention described above, the soaring of the transistor (driving transistor) One of the drains and the other can be electrically connected to the anode of the light-emitting element. In this case, the transistor is an n-channel type transistor. A semiconductor device according to one embodiment includes means having a function for controlling the potential of a first wiring (for example, The means (drive circuit) has a drive circuit, and the potential of the first wiring is the cathode of the light-emitting element The potential of the first wiring is controlled so that there is a period of time during which the potential is below a certain level.

[0015] (Type B) In the semiconductor device according to one aspect of the present invention described above, the soaring of the transistor (driving transistor) One of the drains and the other can be electrically connected to the cathode of the light-emitting element. In this case, the transistor is a p-channel type transistor. A semiconductor device according to one embodiment includes means having a function for controlling the potential of a first wiring (for example, The means (drive circuit) has a drive circuit, and the potential of the first wiring is the anode of the light-emitting element The potential of the first wiring is controlled so that there is a period of time during which the potential is above a certain level.

[0016] Each of the first to third switches can be constructed using a transistor. The transistor in question shall be of the same conductivity type as the driving transistor. It is possible.

[0017] The semiconductor device according to one aspect of the present invention described above includes a channel formation region containing an oxide semiconductor. It can be constructed using a zista. Alternatively, the channel formation region may contain single-crystal silicon. It can be constructed using transistors. Alternatively, polycrystalline silicon can be used in the channel formation region. It can be constructed using a transistor that includes a capacitor. Alternatively, a non- It can be constructed using transistors containing crystalline silicon.

[0018] In other words, transistors with various structures can be used. There are no restrictions on the type of transistor used. One example of a transistor is a single-crystal silicon transistor. A transistor having a crystalline silicon, or amorphous silicon, polycrystalline silicon, microcrystalline silicon. Non-crystalline materials (also called crystals, nanocrystals, or semi-amorphous materials) such as silicon Thin-film transistors (TFTs) having single-crystal semiconductor films can be used.

[0019] For example, a transistor is a compound semiconductor (e.g., SiGe, GaAs). , or oxide semiconductors (e.g., ZnO, InGaZnO, indium zinc oxide, ITO) (Indium tin oxide), SnO, TiO, AlZnSnO(AZTO), InSnZn A transistor having such as O, or a thin film of these compound semiconductors or oxide semiconductors Thin-film transistors and the like can be used. This allows for lower manufacturing temperatures. Therefore, for example, it becomes possible to manufacture transistors at room temperature. Transistors are formed directly on low-profile substrates, such as plastic or film substrates. This can be done. Furthermore, these compound semiconductors or oxide semiconductors can be used as the channels of transistors. It can be used not only in the part but also in other applications. For example, these chemical Compound semiconductors or oxide semiconductors are used for wiring, resistive elements, pixel electrodes, or light-transmitting electrodes, etc. They can be used as such. It is possible to deposit or form them simultaneously with transistors. Therefore, costs can be reduced.

[0020] As an example of a transistor, there are transistors that have organic semiconductors or carbon nanotubes. A device such as a ZISTA can be used.

[0021] One example of a transistor is a multi-gate transistor with two or more gate electrodes. A zistor can be used. With a multi-gate structure, the channel formation regions are connected in series. Because they are connected in series, the structure consists of multiple transistors connected in series. Therefore, multi-gauge The T structure reduces off-current and improves the transistor's breakdown voltage (improving reliability). Yes, it is possible. Alternatively, a multi-gate structure can be used when operating in the saturation region, with drain and source. Even if the voltage between them changes, the current between the drain and source does not change much, and the slope is A voltage-current characteristic with a flat slope can be obtained. By using this, it is possible to realize an ideal current source circuit or an active load with a very high resistance value. This makes it possible to realize differential circuits or current mirror circuits with good characteristics. It is possible.

[0022] One example of a transistor is a structure in which gate electrodes are arranged above and below the channel. A transistor can be applied. The gate electrode is positioned above and below the channel. This results in a circuit configuration where multiple transistors are connected in parallel. Therefore, the channel area increases, allowing for an increase in the current value. Alternatively, the channel By arranging the gate electrodes at the top and bottom, a depletion layer is more likely to form. This allows for improvement of the S value.

[0023] As an example of a transistor, the gate electrode is located on top of the channel formation region. Structures such as a gate electrode positioned below the channel-forming region, positive staggered structure, and inverted staggered structure. A hoop structure, a structure in which the channel-forming region is divided into multiple regions, and a structure in which the channel-forming regions are connected in parallel. Using transistors with a structure such as the one described above, or a structure in which the channel formation regions are connected in series. It is possible.

[0024] As an example of a transistor, a structure with an LDD region can be applied. LDD region By providing this feature, the off-current is reduced, or the transistor's breakdown voltage is improved (reliability is improved). This can be achieved. Alternatively, by providing an LDD region, when operating in the saturation region, Even if the voltage between the drain and source changes, the drain current does not change much, and the slope is It is possible to obtain rat-like voltage and current characteristics.

[0025] Furthermore, any content not specified in the drawings or text within the specification will be excluded. An invention can be constructed that defines the following: or, for a certain value, an upper limit and a lower limit. If a numerical range is specified, such as indicated by the following, you can narrow that range arbitrarily, or By excluding one point within that range, the invention can be defined with a portion of that range excluded. These measures, for example, define that prior art does not fall within the technical scope of the present invention. It is possible.

[0026] As a concrete example, consider a circuit diagram that uses the first to fifth transistors in a certain circuit. Let's assume it's described. In that case, the circuit does not have a sixth transistor. It is possible to define this as an invention. Or, the circuit does not have a capacitive element. It is possible to define that the circuit has a certain connection structure. The invention can be defined as not having a sixth transistor. The circuit is defined as not having a capacitive element with a certain connection structure. A light can be formed. For example, the gate is connected to the gate of a third transistor. It is possible to define the invention as not having a sixth transistor. Or, For example, a capacitive element having a first electrode connected to the gate of a third transistor. It is possible to define an invention as "not having one."

[0027] Another concrete example is, for a certain value, for example, "a certain voltage is between 3V and 10V." It is stated that "it is preferable to do so." In that case, for example, if a certain voltage is -2V It is possible to define the invention as "except in the case where the voltage is greater than or equal to 1V or less." Or, for example, It is possible to define the invention as "except when a certain voltage is 13V or higher." For example, the invention can also be defined as having a voltage of 5V or more and 8V or less. For example, the invention can also be defined as having a voltage of approximately 9V. The invention is defined as having a voltage that is between 3V and 10V, except when it is 9V. It is also possible.

[0028] Another concrete example would be, for a certain value, "It is preferable that a certain voltage be 10V." Let's assume it is stated that "it is." In that case, for example, a certain voltage is -2V or more and 1V or less. It is possible to define the invention as except in the case of, or, for example, if a certain voltage is It is possible to define the invention as "except in cases where the voltage is 13V or higher."

[0029] Another concrete example is describing the properties of a certain substance, for example, "a certain film is an insulating film." Assume it is described. In that case, except, for example, when the insulating film is an organic insulating film. It is possible to define the invention as follows: Or, for example, if the insulating film is an inorganic insulating film. It is possible to define the invention as "except in the case of..."

[0030] Another concrete example is a layered structure, for instance, "a film is provided between A and B." Let's say it is stated that "it is made of four or more layers". In that case, for example, the film is a laminated film of four or more layers. It is possible to define the invention as "except in the case of A and its film and The invention can be defined as "except in cases where a conductive film is provided between them." [Effects of the Invention]

[0031] In one aspect of the present invention, a threshold voltage is applied between the source and gate of the drive transistor in accordance with the threshold voltage of the drive transistor. The voltage can be set. In this way, the effects of variations in transistor characteristics are suppressed. It is possible to provide semiconductor devices, light-emitting devices, or display devices that can be used. A semiconductor device, light-emitting device, or display device that minimizes the effects of degradation of the characteristics of a transistor. This can provide: or variations in brightness due to variations in the threshold voltage of transistors. This invention provides a semiconductor device, light-emitting device, or display device in which adhesion is suppressed. Alternatively, semiconductor equipment that can suppress variations in brightness due to variations in transistor mobility. A device, light-emitting device, or display device can be provided. Alternatively, one aspect of the present invention is: Even if the transistor is of the normally-off type, it will still function normally in semiconductor devices, light-emitting devices, and This can provide a display device. Alternatively, one aspect of the present invention is that the transistor is A semiconductor device, light-emitting device, that can acquire the threshold voltage of a transistor even if it is a Mario-F type. A device or display device can be provided. Alternatively, a semiconductor device that provides a high-quality display. It can provide a light-emitting device or a display device. Alternatively, it can provide a display with less unevenness. A semiconductor device, light-emitting device, or display device can be provided. Or, a small number of A semiconductor device, light-emitting device, or display that can realize a desired circuit using a specific number of transistors. We can provide a device that can realize the desired circuit with a small number of wires. A semiconductor device, a light-emitting device, or a display device can be provided. It is possible to provide a semiconductor device, light-emitting device, or display device in which the effects of degradation are suppressed. It is possible. Or, it is possible to provide semiconductor devices, light-emitting devices, or display devices that are manufactured with a small number of processes. It can be provided. [Brief explanation of the drawing]

[0032] [Figure 1] A diagram showing the configuration of a semiconductor device. [Figure 2] A diagram showing the configuration of a semiconductor device. [Figure 3] A diagram showing the configuration of a semiconductor device. [Figure 4] A diagram showing the configuration of a semiconductor device. [Figure 5] A diagram showing the timing chart and the operation of a semiconductor device. [Figure 6] A diagram illustrating the operation of a semiconductor device. [Figure 7] A diagram illustrating the operation of a semiconductor device. [Figure 8] A diagram showing the configuration of a semiconductor device. [Figure 9] A diagram showing the configuration of a semiconductor device. [Figure 10]A diagram showing the configuration of a semiconductor device. [Figure 11] A diagram showing the configuration of a semiconductor device. [Figure 12] A diagram showing the configuration of a semiconductor device. [Figure 13] A diagram showing the configuration of a semiconductor device. [Figure 14] A diagram showing the configuration of a semiconductor device. [Figure 15] A diagram showing the configuration of a semiconductor device. [Figure 16] A diagram showing the configuration of a semiconductor device. [Figure 17] A diagram showing the timing chart and the operation of a semiconductor device. [Figure 18] A diagram illustrating the operation of a semiconductor device. [Figure 19] A diagram illustrating the operation of a semiconductor device. [Figure 20] A diagram showing the timing chart and the operation of a semiconductor device. [Figure 21] A diagram showing the configuration of a semiconductor device. [Figure 22] A diagram showing the configuration of a semiconductor device. [Figure 23] A diagram showing the configuration of a semiconductor device. [Figure 24] A diagram showing the configuration of a semiconductor device. [Figure 25] A diagram showing the configuration of a semiconductor device. [Figure 26] A diagram showing the configuration of a semiconductor device. [Figure 27] A diagram showing the configuration of a semiconductor device. [Figure 28] A diagram showing the configuration of a semiconductor device. [Figure 29] A diagram showing the configuration of a semiconductor device. [Figure 30] A diagram showing the configuration of a semiconductor device. [Figure 31] A diagram showing the configuration of a semiconductor device. [Figure 32] A diagram showing the configuration of a semiconductor device. [Figure 33] A diagram showing the configuration of a semiconductor device. [Figure 34] A diagram showing the configuration of a semiconductor device. [Figure 35]A diagram illustrating the operation of a semiconductor device. [Figure 36] A diagram illustrating the operation of a semiconductor device. [Figure 37] A diagram showing the configuration of a semiconductor device. [Figure 38] A diagram showing the configuration of a semiconductor device. [Figure 39] A diagram showing the configuration of a semiconductor device. [Figure 40] A diagram showing the configuration of a semiconductor device. [Figure 41] A diagram showing the configuration of a semiconductor device. [Figure 42] A diagram showing the configuration of a semiconductor device. [Figure 43] A diagram showing the configuration of a semiconductor device. [Figure 44] A diagram showing the configuration of a semiconductor device. [Figure 45] A diagram showing the configuration of a semiconductor device. [Figure 46] A diagram showing the configuration of a semiconductor device. [Figure 47] A diagram showing the configuration of a semiconductor device. [Figure 48] A diagram showing the configuration of a semiconductor device. [Figure 49] A diagram showing the configuration of a semiconductor device. [Figure 50] A diagram showing the configuration of a semiconductor device. [Figure 51] A diagram showing the configuration of a semiconductor device. [Figure 52] A diagram showing the configuration of a semiconductor device. [Figure 53] A diagram showing the configuration of a semiconductor device. [Figure 54] A diagram showing the configuration of a semiconductor device. [Figure 55] A diagram showing the configuration of a semiconductor device. [Figure 56] A diagram showing the configuration of a semiconductor device. [Figure 57] A diagram showing the configuration of a semiconductor device. [Figure 58] A diagram showing the configuration of a semiconductor device. [Figure 59] A diagram showing the configuration of a semiconductor device. [Figure 60] A diagram showing the configuration of a semiconductor device. [Figure 61] A diagram showing the configuration of a semiconductor device. [Figure 62] A diagram showing the configuration of a semiconductor device. [Figure 63] A diagram showing the configuration of a semiconductor device. [Figure 64] A diagram showing the configuration of a semiconductor device. [Figure 65] A diagram showing the configuration of a semiconductor device. [Figure 66] A diagram showing the configuration of a semiconductor device. [Figure 67] A diagram showing the configuration of a semiconductor device. [Figure 68] A diagram showing the configuration of a semiconductor device. [Figure 69] A diagram showing the configuration of a semiconductor device. [Figure 70] A diagram showing the configuration of a semiconductor device. [Figure 71] A diagram showing the configuration of a semiconductor device. [Figure 72] A diagram illustrating the operation of a semiconductor device. [Figure 73] A diagram showing the configuration of a semiconductor device. [Figure 74] A diagram showing the configuration of a semiconductor device. [Figure 75] A diagram showing the configuration of a semiconductor device. [Figure 76] A diagram showing the configuration of a semiconductor device. [Figure 77] A diagram showing the configuration of a semiconductor device. [Figure 78] A diagram showing the configuration of a semiconductor device. [Figure 79] A diagram showing the configuration of a semiconductor device. [Figure 80] A diagram showing the configuration of a semiconductor device. [Figure 81] A diagram showing the configuration of a semiconductor device. [Figure 82] A diagram showing the configuration of a semiconductor device. [Figure 83] A diagram showing the configuration of a semiconductor device. [Figure 84] A diagram showing the configuration of a semiconductor device. [Figure 85] A diagram of an electronic device. [Figure 86] A diagram showing the configuration of a semiconductor device. [Figure 87] A diagram showing the configuration of a semiconductor device. [Figure 88] A diagram and timing chart showing the configuration of a semiconductor device. [Figure 89] A diagram showing the results of the simulation. [Figure 90] A diagram showing the results of the simulation. [Figure 91] A diagram of an electronic device. [Modes for carrying out the invention]

[0033] The embodiments of the present invention will be described in detail below with reference to the drawings. However, the present invention is... Not limited to the following description, the present invention may have forms and characteristics that do not depart from the spirit and scope of the invention. Those skilled in the art will readily understand that the details can be modified in various ways. Therefore, the present invention This shall not be interpreted as being limited to the descriptions of the embodiments shown below. In the configuration described, the same reference numeral is used for parts that are identical or have similar functions. Explanations of repetitions of elements used commonly across different drawings will be omitted.

[0034] Furthermore, the content described in one embodiment (even a part of it) may vary depending on the form of its implementation. Other content (even partial content) described in the voice, and / or one or more other facts Regarding the content described in the form of implementation (even if only a part of it is included), apply, combine, or place Replacements and other modifications can be made.

[0035] Note that the configuration of a figure (or even just a part of it) described in one embodiment may differ from that of another figure. The configuration of the part, the configuration of another figure (which may be a part) described in the embodiment thereof, and / or This is combined with the configuration of the figures (or even just a part of them) described in one or more other embodiments. They can be combined.

[0036] Note that in the figures, the size, thickness, or area may be exaggerated for clarity. Yes. Therefore, one embodiment of the present invention is not necessarily limited to its scale. Furthermore, the figure schematically illustrates an ideal example. Therefore, it represents one embodiment of the present invention. The term "variation" is not limited to the shapes shown in the diagram. For example, variations in shape and errors due to manufacturing techniques. It is possible to include variations in shape caused by [unspecified factor].

[0037] Note that if it is explicitly stated that X and Y are connected, it means that X and Y are electrically connected. When X and Y are functionally connected, and when X and Y are directly connected This includes cases where X and Y are objects (e.g., devices, elements, circuits). (This refers to wiring, electrodes, terminals, conductive films, layers, display elements, light-emitting elements, loads, etc.) Therefore, the connection relationships are not limited to those shown in the diagram or text, but are also applicable to those shown in the diagram. This includes relationships other than those explicitly stated in the text.

[0038] One example of a case where X and Y are electrically connected is the ability to make an electrical connection between X and Y possible. Elements such as switches, transistors, capacitive elements, inductors, resistive elements, and dies. One or more devices (such as diodes, display elements, light-emitting elements, and loads) are connected between X and Y. Yes, it is possible. Furthermore, a switch has the function of being controlled to be on or off. In other words, a switch The switch can be in a conductive (on) or non-conductive (off) state, allowing current to flow. It has a function to control whether or not current flows. Alternatively, the switch selects the path through which current flows. It has a function to switch between modes.

[0039] One example of a functional connection between X and Y is enabling a functional connection between X and Y. Circuits that perform this function (for example, logic circuits (inverters, NAND gates, NOR gates, etc.), signal transformers) Conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (electric (Source circuits (boost circuits, buck circuits, etc.), level shifter circuits that change the potential level of a signal, etc.) Voltage source, current source, switching circuit, amplification circuit (which can increase signal amplitude or current amount, etc.) Circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc., signal generation One or more circuits (such as memory circuits and control circuits) can be connected between X and Y. For example, even if another circuit is placed between X and Y, the signal output from X If the signal is transmitted to Y, then X and Y are assumed to be functionally connected.

[0040] Note that if it is explicitly stated that X and Y are connected, it means that X and Y are electrically connected. When X and Y are functionally connected, and when X and Y are directly connected This includes cases where they are electrically connected. In other words, it explicitly states that they are electrically connected. In this case, it is the same as if it were simply explicitly stated that it is connected. .

[0041] Note that, in circuit diagrams, independent components are shown as being electrically connected to each other. Even in such cases, one component may possess the functions of multiple components. For example, if part of the wiring also functions as an electrode, one conductive film will perform the function of the wiring, and It possesses both functions of an electrode. Therefore, electrically connected as described herein. This means that even when a single conductive film possesses the functions of multiple components, Include it in the category.

[0042] Note that active elements (transistors, diodes, etc.) and passive elements (capacitors, resistors, etc.) are distinct categories. For all terminals such as those mentioned above, a person skilled in the art can, without specifying the destination of the connection, It may be possible to constitute one aspect of the invention. In other words, even without specifying the connection destination, In cases where one aspect of the specification is clear and can be determined to be described herein, etc. In particular, if there are multiple possible destinations for the terminal, the destination of that terminal should be specified. It is not necessary to limit it to specific locations. Therefore, active elements (transistors, diodes, etc.), Only for some terminals of passive elements (capacitive elements, resistive elements, etc.), the connection destination In some cases, it may be possible to constitute one aspect of the invention by specifying [a certain element].

[0043] Furthermore, regarding a certain circuit, if at least the connection destination is specified, a person skilled in the art can identify the invention. In some cases, it may be possible to do so. Or, if you can at least identify the function of a particular circuit... A person skilled in the art may be able to specify the invention. In other words, if the function is specified, If one aspect of the invention is clear and can be determined to be described in this specification, etc. Therefore, for a given circuit, even without specifying its function, if you specify the connection destination, This is disclosed as one aspect of the invention, and it is possible to constitute one aspect of the invention. Alternatively, regarding a certain circuit, even without specifying the connection destination, if the function is specified, one can identify the invention. This is disclosed as an embodiment and can constitute one aspect of the invention.

[0044] Furthermore, one embodiment of the present invention can be implemented by various people. However, Furthermore, the implementation may involve multiple people. For example, a transmission / reception system. In this case, Company A manufactures and sells the transmitter, and Company B manufactures and sells the receiver. There are cases where this is the case. Another example is in the case of a light-emitting device having a TFT and a light-emitting element, The semiconductor device on which the TFT is formed is manufactured and sold by Company A. And Company B is the semiconductor Purchase a semiconductor device, deposit a light-emitting film onto it, and complete it as a light-emitting device. There are cases like that.

[0045] In such a case, the invention would allow for a patent infringement claim against either Company A or Company B. This constitutes one aspect of the patent infringement. Therefore, a claim of patent infringement can be made against Company A or Company B. One aspect of the invention that can be made is clear and is deemed to be described in this specification, etc. Yes, it is possible. For example, in the case of a transmission and reception system, the transmitter alone constitutes one aspect of the invention. It is possible to constitute one aspect of the invention with only a receiver, and such aspects of the invention are It is clear and can be determined to be described herein, etc. Another example is, In the case of a light-emitting device having a TFT and a light-emitting element, the semiconductor device on which the TFT is formed One aspect of the invention can be constituted by only a light-emitting device having a TFT and a light-emitting element. This can constitute one aspect of the invention, and such aspects of the invention are clearly defined in this specification. It can be concluded that this is stated in the relevant documents.

[0046] (Embodiment 1) One aspect of the present invention can be used not only as a pixel having an light-emitting element, but also as various circuits. It can be used, for example, as an analog circuit or as a circuit that functions as a current source. It is possible to do so. Therefore, in this embodiment, the basic principle of the circuit disclosed in this invention Let me give you an example.

[0047] A semiconductor device according to one aspect of the present invention includes, for example, a transistor and the transistor Then, with the gate potential fixed, the charge held between the gate and source is discharged. A semiconductor device according to one aspect of the present invention has at least the above configuration This design compensates for variations in drain current caused by the transistor's threshold voltage, mobility, etc. It can be corrected.

[0048] The circuit 100 shown in Figure 1(A) is a semiconductor device according to one aspect of the present invention. Switch 11, Switch 12, Switch 13, Transistor 101, Capacitive element 102, It has a capacitive element 103. Note that in Figure 1(A), the transistor 101 is an n-channel type. This is an example of one particular case.

[0049] Specifically, in Figure 1(A), the switch 11 connects the wiring 21 to one electrode of the capacitive element 102. It has a function to control the conductivity state between the (terminal) or one electrode (terminal) of the capacitive element 103. The switch 12 connects the wiring 22 and the other electrode (terminal) of the capacitive element 102 to the transistor. It has the function of controlling the conductivity state between the gate of the terminal 101. Switch 13 is a transistor Either the source or drain electrode of the zista 101, or the other electrode (terminal) of the capacitive element 103. ) and between one electrode of the capacitive element 102, or one electrode (terminal) of the capacitive element 103 It has the function of controlling the conduction state of the source or drain of transistor 101. It is connected to wiring 23. Either the source or drain of transistor 101, or The other electrode (terminal) of the capacitive element 103 is connected to the wiring 24.

[0050] Furthermore, the source (source terminal, source region, or source electrode) of the transistor and Dre The drain terminal (drain region or drain electrode) is the polarity and sole of the transistor. The name changes depending on the potential applied to the drain and the casing. Generally, In an n-channel transistor, the lower potential of the source and drain is the source. The channel to which a higher potential is applied is called the drain. Also, p-channel type transformer In an inverter, of the source and drain, the one to which the lower potential is applied is called the drain. The side to which the higher potential is applied is called the source. For convenience, in this specification, source and drain are referred to as source and drain. Sometimes, the connection relationships of transistors are explained by assuming that the two components are fixed, In reality, the terms source and drain are reversed according to the potential relationship described above. The part that functions as a source and the part that functions as a drain are called the source or drain. There are cases where this is not possible. In such cases, for example, one of the source and drain terminals may be connected to the first terminal and the first terminal. The electrode, or first region, is referred to as the source, and the other of the drain is referred to as the second terminal, second electrode, or It is sometimes referred to as the second area.

[0051] The switch has the function of switching between a conductive state and a non-conductive state between terminals. It is an element that has the function of controlling whether or not to allow current to flow. Or, a switch. It has the function of selecting and switching the path through which the current flows, for example, to flow current through path 1. You can choose to either enable this or allow current to flow through path 2 and switch between the two. It has the function of enabling this. For example, by using an electrical switch or a mechanical switch. This can be done. Specifically, transistors, diodes, digital micromirror devices. (DMD) uses MEMS (Micro-Electro-Mechanical Systems) technology. It can be constructed using switches, etc. Also, a switch is a combination of transistors. A simple circuit is also acceptable. When using a transistor as a switch, the polarity of the transistor is particularly important. It is not limited to this. However, it is preferable to use a transistor with a small off-current, and the input It is desirable to use the appropriate polarity of the transistor depending on the potential.

[0052] Furthermore, transistors with low off-current include transistors with an LDD region, and A transistor having a tigate structure, or a transistor containing an oxide semiconductor in the channel formation region. There are transistors, etc. Also, when combining transistors to operate as a switch, A complementary switch using both n-channel and p-channel types may also be used. By switching it on, even if the potential input to the switch changes relatively compared to the output potential... It can be made to work properly.

[0053] When using a transistor as a switch, the switch is connected to the input terminal (source or (One side of the drain), an output terminal (the other side of the source or drain), and a terminal that controls conductivity. It may have a (gate). On the other hand, when a diode is used as a switch, A switch may not have terminals to control conductivity. Therefore, a transistor... Using a diode as a switch reduces the amount of wiring required to control the terminals. It is possible.

[0054] As an example of a transistor, the gate is located above and below the channel formation region. A transistor structure can be applied by placing the gate above and below the semiconductor film. Therefore, the circuit configuration becomes like having multiple transistors connected in parallel. Because the formation area increases, the current value can be increased. Alternatively, the channel formation area By arranging the gates at the top and bottom, a depletion layer is more likely to form, S The value can be improved.

[0055] As an example of a transistor, the source power is located in the channel formation region (or a part thereof). Transistors with a structure in which the electrodes and drain electrodes overlap can be used. Channel type By creating a structure in which the source electrode and drain electrode overlap the formed region (or a part thereof), This prevents unstable operation caused by the accumulation of charge in a part of the channel formation region. It is possible.

[0056] The capacitive element 102 or capacitive element 103 may be, for example, wiring, a semiconductor film, or an electrode. This can be achieved by sandwiching an insulating film or an organic film between the layers.

[0057] Note that the circuit 100 shown in Figure 1(A) has a load 104 as shown in Figure 1(B). It is also acceptable. In the circuit 100 shown in Figure 1(B), the load 104 is the soaring of the transistor 101. A connection is made between one of the electrodes of the drain or the other electrode of the capacitive element 103 and the wiring 24. It continues.

[0058] In this specification, "load" refers to, for example, a load that has rectifying properties or a load that has capacitive properties. These include resistive circuits, switches, pixel circuits, and current source circuits. For example, a device with rectifying properties will have different resistance values ​​depending on the direction of the applied bias, and will exhibit current-voltage characteristics. It is assumed to possess the property of having an electrical characteristic in which current flows almost entirely in one direction. Specifically, as load 104, display elements (liquid crystal elements, EL elements, etc.), light-emitting elements (EL(E) Electroluminescent (EL) elements (including organic and inorganic EL elements, organic EL elements, inorganic) EL elements, LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.), transistors A transistor (which emits light in response to current), an electron-emitting element, or a display element or light-emitting element. Examples include parts of the element (for instance, pixel electrodes, anodes, cathodes, etc.).

[0059] Figure 1(C) shows the configuration of circuit 100 when a light-emitting element 104a is used as the load 104. This is shown in Figure 1(C), where the anode of the light-emitting element 104a is the source of the transistor 101. Alternatively, it is connected to one of the drains or to the other electrode of the capacitive element 103, and the light-emitting element This shows an example where the cathode of child 104a is connected to wiring 24.

[0060] Furthermore, Figure 1(D) shows the circuit 100 when a light-emitting element 104b is used as the load 104. The configuration is shown. In Figure 1(D), the cathode of the light-emitting element 104b is connected to the transistor 101. It is connected to either the source or the drain, or to the other electrode of the capacitive element 103. This diagram shows an example where the anode of the light-emitting element 104b is connected to the wiring 24. Figure 1(D) shows an example where transistor 101 is a p-channel type. They are doing it.

[0061] Furthermore, a semiconductor device according to one aspect of the present invention is shown, for example, in Figures 1(A) to 1(D). In addition to circuit 100, a circuit having the function of supplying various constant voltages and signals to circuit 100 is provided. They may also have additional possessions.

[0062] The semiconductor device shown in Figures 2(A) to 2(D) is the same as the circuit shown in Figures 1(A) to 1(D). In addition to 00, there is a circuit 201 that has the function of supplying a constant voltage or signal to wiring 21, and wiring 2 Circuit 202 has the function of supplying a constant voltage or signal to 2, and wiring 23 has the function of supplying a constant voltage or signal A circuit 203 that has a supply function and a wiring 24 that has a function to supply a constant voltage or signal It has circuit 204 and other circuits.

[0063] Specifically, circuit 201 has the function of supplying potential Vi1 or potential Vsig to wiring 21. It possesses. An example of circuit 201 is a source driver (signal line driving circuit). Therefore, the wiring 21 is capable of transmitting potential Vi1 and / or potential Vsig. It has the ability to or supply the function. Alternatively, wiring 21 is a video signal line It has the function of being an initialization wire. Alternatively, wiring 21 has the function of being an initialization wire. ru.

[0064] The potential Vi1 is the potential used to initialize the potential of each node in circuit 100. Alternatively, The potential Vi1 is, for example, the potential used to supply charge to the capacitive element 102. For example, the potential Vi1 is the potential required to turn on transistor 101. Furthermore, it is desirable that the potential Vi1 be a constant potential, but this is one embodiment of the present invention. The characteristics are not limited to this, and may fluctuate like a pulse signal.

[0065] For example, before supplying the potential Vsig to circuit 100, the potential Vi1 rotates It will be supplied to road 100.

[0066] The potential Vsig is the potential used to control the magnitude of the drain current of transistor 101. In the case of the semiconductor device shown in Figure 2(B), the drain current is supplied to the load 104. In the case of the semiconductor device shown in Figure 2(C), the drain current is supplied to the light-emitting element 104a. It is supplied. In the case of the semiconductor device shown in Figure 2(D), the drain current is supplied to the light-emitting element 104 It is supplied to b. For example, if the drain current of transistor 101 is kept constant, The height of position Vsig is kept constant. Also, for example, the drain current of transistor 101 is kept constant. If a constant value is not used, the height of the potential Vsig is changed over time. One example is... Vsig is a video signal and / or an analog signal. However, in embodiments of the present invention One embodiment is not limited to this, and the potential Vsig may be a constant potential.

[0067] Furthermore, circuit 202 has the function of supplying potential Vi2 to wiring 22. Example of circuit 204 Examples include power supply circuits. Therefore, wiring 22 can transmit the potential Vi2. It has the ability to perform or supply functions. Alternatively, wiring 22 is initially It functions as wiring for periodic changes. Furthermore, the potential of wiring 22 is constant. While this is preferable, one embodiment of the present invention is not limited thereto, and changes such as pulse signals You may move it.

[0068] The potential Vi2 is the initial potential of each node in circuit 100 (especially the gate of transistor 101). This is the potential for periodization. In the case of Figure 2(C), the potential Vi2 is the potential of wiring 24. It is preferable that the current is the same as or lower than that. This allows the light-emitting element 104a to receive current. This can reduce the flow of current. In Figure 2(D), the potential Vi2 is the current of wiring 24. It is preferable that the position is the same as or higher than that. This allows the light-emitting element 104b to The flow of current can be reduced. However, the potential Vi2 is not limited to these. It is desirable that the potential Vi2 be a constant potential, but this is one embodiment of the present invention. The characteristics are not limited to this, and may fluctuate like a pulse signal.

[0069] Note that wiring 22 can be connected to other wiring or to wiring of another circuit 100. Yes, it is possible. This will reduce the number of wires.

[0070] Furthermore, circuit 203 has a power supply potential (high power supply potential or low power supply potential) connected to wiring 23, for example, It has the function of supplying potential VDD or potential VSS. Alternatively, circuit 203 is wired 23 has the function of supplying signals. Examples of circuit 203 include power supply circuits and pulse output circuits. There are circuits, gate driver circuits, etc. Therefore, wiring 23 is connected to the power supply potential or signal. It has the ability to transmit or supply information. Line 23 has the function of supplying current to transistor 101. The wiring 23 has the function of being able to supply current to the load 104. Alternatively, Line 23 functions as a power line. Alternatively, wiring 23 functions as a current supply line. It has the function. It is desirable that the potential of wiring 23 be a constant potential, however this generation One embodiment of the Mei embodiment is not limited thereto, and may fluctuate like a pulse signal. For example If the potential of wiring 23 is such that the load 104 is subjected to not only a forward bias voltage but also a reverse bias voltage, It can be an electrical potential that allows for a certain degree of electrical potential.

[0071] Furthermore, circuit 204 has a power supply potential (low power supply potential or high power supply potential) connected to the wiring 24, for example, It has the function of supplying potential Vcat. An example of circuit 204 is a power supply circuit. Therefore, the wiring 24 has the function of being able to transmit or supply power potential. It has the capability to do so. Alternatively, wiring 24 can supply current to load 104. It has the function of supplying current to transistor 101. It has the capability to do so. Alternatively, wiring 24 has the function of a common line. Wiring 24 functions as a cathode wire. Alternatively, wiring 24 functions as an anode wire. It has the function of being such. Furthermore, it is desirable that the potential of wiring 24 be a constant potential. However, one embodiment of the present invention is not limited thereto, and may vary like a pulse signal. For example, the potential of wiring 24 is such that the load 104 has a forward bias voltage as well as a reverse bias voltage. It could also be a potential that applies pressure.

[0072] The potential difference between potential VDD and potential Vcat determines the drain current in transistor 101. The direction is determined. For example, if the potential VDD is higher than the potential Vcat, then the wires from wire 23 to wire 24... Current flows through it. When the potential of wiring 23 is lower than the potential Vcat when the potential is VSS, the wiring Current flows from wire 24 to wiring 23.

[0073] In addition to circuit 100, the semiconductor device in Figures 2(A) to 2(D) is circuit 201. The example shown is one in which circuits 202, 203, and 204 are included. A semiconductor device according to one aspect of the invention does not necessarily include circuits 201, 202, 203, and It is not necessary to have all of the circuits 204; having only one or more of them is sufficient. stomach.

[0074] For example, transistor 101 has at least the function of a current source. Therefore, for example, transistor 101 has both ends (source and It has the function of supplying a generally constant current even if the magnitude of the voltage applied (between the drains) changes. Alternatively, for example, transistor 101 does not react negatively even if the potential of load 104 changes. It has the function of supplying a roughly constant current to load 104. Or, for example, a transistor. 101 has the function of supplying a generally constant current even when the potential of the wiring 23 changes.

[0075] However, one embodiment of the present invention is not limited thereto, and the transistor 101 is a current source It is also possible that it does not have the function of a switch. For example, transistor 101 is a switch It is possible to have the function.

[0076] In addition to current sources, there are also voltage sources. A voltage source supplies current to the circuit connected to it. It has the function of supplying a constant voltage even when the current changes. Therefore, the voltage source is also A current source also has the function of supplying voltage and current, but no matter what changes, it will supply something constant. They have different functions in that they either have the function of supplying power or not. It has the function of supplying a constant current even if the voltage across its terminals changes, and the voltage source has the function of supplying a constant current even if the current changes However, it has the function of supplying a constant voltage.

[0077] Note that Figure 1 and other diagrams show only one example of a circuit configuration; additional transistors can be added. This is possible. Conversely, at each node in Figure 1, it is possible to add transistors, switches, etc. It is also possible to omit passive elements, etc. For example, the terminals of each switch are The connected node, the node to which each terminal of the transistor is connected, or / and the load At each node to which terminals are connected, the directly connected transistors are not to be further set. It is possible to prevent this from happening. Therefore, for example, load 104 and transistor 101 In a node where the capacitive element 103 and the switch 13 are connected, they are directly connected. The only transistor present is transistor 101, and the other transistors are at their nodes. It is possible to create a configuration where the devices are not directly connected.

[0078] Therefore, if you do not add transistors, you can construct the circuit with a small number of transistors. This becomes possible.

[0079] Note that the circuit 100 shown in Figures 1 and 2 consists of switches 11, 12, and 13 A transistor can be used for this.

[0080] In the circuit 100 shown in Figures 1(A) to 1(D), the switch 11 is a transistor Transistor 12t as switch 12, and transistor 13 as switch 13 The configuration of circuit 100 when using Ta13t is shown in Figures 3(A) to 3(D). In FIGS. 3(A) to 3(C), as an example, the case where all of the transistors 11t, 12t, and 13t are n-channel type is shown. Further, in FIG. 3(D), as an example, the case where all of the transistors 11t, 12t, and 13t are p-channel type is shown. By making all of the transistors 11t, 12t, and 13t transistors of the same polarity, these transistors can be manufactured with a smaller number of processes. However, one aspect of the embodiment of the present invention is not limited thereto, and it is also possible to use transistors of different polarities.

[0081] Note that in FIGS. 3(A) to 3(D), the gate of the transistor 11t is connected to the wiring 31. According to the potential supplied to the wiring 31, the transistor 11t becomes conductive or non-conductive. The gate of the transistor 12t is connected to the wiring 32. According to the potential supplied to the wiring 32, the transistor 12t becomes conductive or non-conductive. The gate of the transistor 13t is connected to the wiring 33. According to the potential supplied to the wiring 33, the transistor 13t becomes conductive or non-conductive. Therefore, it is desirable that the potentials of the wirings 31 to 33 are pulsed and not constant, but one aspect of the embodiment of the present invention is not limited thereto. Alternatively, the wirings 31 to 33 have a function as a gate signal line (gate line), a selection signal line, or a scan line (scan line).

[0082] Note that in the wirings 31 to 33, at least two of them can be connected to each other. Alternatively, at least one of the wirings 31 to 33 is another circuit 1​ It is possible to connect to at least one of the wirings 31 to 33 of 00.

[0083] Furthermore, a semiconductor device according to one aspect of the present invention is the circuit 10 shown in Figures 3(A) to 3(D) In addition to 0, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is further It's okay to have it.

[0084] The semiconductor device shown in Figures 4(A) to 4(D) is the same as the circuit shown in Figures 3(A) to 3(D) In addition to 00, there is a circuit 205 that has the function of supplying a constant voltage or signal to wiring 31, and wiring 3 Circuit 206 has the function of supplying a constant voltage or signal to 2, and wiring 33 has the function of supplying a constant voltage or signal Circuits 205, 206, and 207 each have a supply function. Examples of 207 include gate drivers (scan line driving circuits).

[0085] Note that circuits 201, 202, 203, 204, 205, 206, The path 207 may be a single identical circuit or it may be a set of separate circuits.

[0086] In addition to circuit 100, the semiconductor device also includes circuit 205 in Figures 4(A) to 4(D). The example shown includes a case where the circuit has circuits 206 and 207, but this is one aspect of the present invention. The semiconductor device relating to this does not necessarily have to have all of circuits 205, 206, and 207. It is not necessary; it is acceptable to have only one or more of them.

[0087] Furthermore, in the circuit 100 shown in Figure 3(C), transistors 101 and 11t , and in the case where transistor 13t is an n-channel type and transistor 12t is a p-channel type The configuration of the combined circuit 100 is shown in Figure 37(A). Also, in the circuit 100 shown in Figure 3(D) Transistors 101, 11t, and 13t are p-channel type. Figure 37(B) shows the configuration of circuit 100 when transistor 12t is of the n-channel type. Thus, transistors with various polarities can be used.

[0088] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 37(A) and 37(B). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0089] The semiconductor device shown in Figures 37(C) and 37(D) is the same as the one shown in Figures 37(A) and 37(B). In addition to circuit 100, there is circuit 205 which has the function of supplying a constant voltage or signal to wiring 31. A circuit 206 that has the function of supplying a constant voltage or signal to wiring 32, and a circuit 206 that has the function of supplying a constant voltage to wiring 33 Each also has a circuit 207 that has the function of supplying signals.

[0090] In addition to circuit 100, the semiconductor device also includes circuit 2 in Figures 37(C) and 37(D). While the case of having circuit 05, circuit 206, and circuit 207 is shown as an example, the present invention is one The semiconductor device according to this embodiment does not necessarily have all of circuits 205, 206, and 207. It is not necessary to have all of them; having only one or more of them is sufficient.

[0091] Note that transistor 101 often operates in the saturation region when current is flowing through it. In Figures 3, 4, and 37, the channel length or gate of transistor 101 is shown. The length is determined by transistor 11t, transistor 12t, and / or transistor 13t. It is desirable to increase the length. By increasing the channel length or gate length, the characteristics in the saturation region become flat, and the kink effect can be reduced. Preferably, it is 5 times or more, more preferably 10 times or more. As an example, the channel length or gate length of transistor 101 is 10 μm or more, more preferably 20 μm or more. Alternatively, by making the channel width or gate width of transistor 101 longer than that of transistor 11t, transistor 12t, and / or transistor 13t, transistor 101 can conduct a large amount of current even in the saturation region. Preferably, it is 5 times or more, more preferably 10 times or more. The channel width or gate width of transistor 101 is 20 μm or more, more preferably 30 μm or more. However, one aspect of the embodiment of the present invention is not limited to these. Next, taking the circuit 100 shown in FIG. 1(C) as an example, the operation of the semiconductor device according to one aspect of the present invention will be described. The operation of the circuit 100 shown in FIG. 1(C) can be mainly divided into a first operation, a second operation, a third operation, a fourth operation, and a fifth operation. However, it is not limited to this, and new operations can be added or some operations can be deleted. An example of a timing chart showing the operations of switches 11, 12, and 13 in the circuit 100 shown in FIG. 1(C), the potential of wiring 21, and the gate-source voltage (Vgs101 ) of transistor 101 is illustrated in FIG. 5(A).

[0092]

[0093]

[0094]

[0095] ​​​​​​​​​​​​First, we will explain the first operation that takes place during period T11. During period T11, Figure 5 As shown in (A), switches 11, 12, and 13 are in a conductive state. Furthermore, potential Vi1 is supplied to wiring 21. Therefore, during period T11, Figure 5(B) As shown, the voltage Vi2-Vi1 is supplied to the capacitive element 102, and the ano of the light-emitting element 104a The voltage becomes Vi1, and the gate-source voltage (Vgs101) of transistor 101 is , the voltage becomes Vi2-Vi1. In other words, transistor 101 and capacitive element 102, This means it's being initialized.

[0096] In the circuit 100 shown in Figure 1(C), the potential Vi2 is at the potential Vi1, and the transistor 10 It is desirable that the potential is higher than the potential obtained by adding the threshold voltage Vth of 1. That is, the potential Vi2 and The potential Vi1 should ideally be such that transistor 101 is turned ON. Furthermore, the threshold voltage Vthe of the light-emitting element 104a is at potential Vi1 (when the light-emitting element 104a emits light). The potential obtained by adding the starting voltage should preferably be lower than the potential Vcat. For example, potential V Ideally, i1 should be at the same potential as or lower than potential Vcat. If i1 is lower than the potential Vcat, the light-emitting element 104a will be in a reverse bias state. Therefore, it is possible to reduce the degradation of the light-emitting element 104a or repair short circuits. Yes. Also, the potential obtained by subtracting the threshold voltage Vthe of the light-emitting element 104a from the potential Vi2 is, It is desirable that the potential is lower than Vcat. For example, the threshold voltage Vthe is 0 Let's assume that this is the case.

[0097] The second operation that takes place during period T12 will be described. During period T12, Figure 5(A) As shown, switch 11 is in a non-conductive state, and switches 12 and 13 are in a conductive state. Yes. When switch 11 becomes non-conductive, the charge stored in capacitive element 102 It is emitted through transistor 101, and the potential of the source of transistor 101 rises. Then, when transistor 101 is turned off, the discharge of charge from capacitive element 102 stops. In conclusion, the threshold voltage Vth of transistor 101 is ultimately held by the capacitive element 102. Therefore, during period T12, as shown in Figure 5(C), a threshold voltage Vth is applied to the capacitive element 102. This is maintained, and the anode of the light-emitting element 104a becomes potential Vi2-Vth, and transistor 1 The gate-source voltage of 01 (Vgs101) becomes the threshold voltage Vth. The threshold voltage Vth of the ZISTRA 101 can be obtained.

[0098] Note that it takes time for Vgs101 to become equal to the threshold voltage Vth of transistor 101. This can sometimes require a very long time. Therefore, Vgs101 is the threshold voltage. In many cases, it is operated without completely reducing the Vth. In other words, Vgs101 is In some cases, the period T12 ends with the voltage Vth being slightly greater than the specified value. That's a lot. In other words, at the end of period T12, Vgs101 is corresponding to the threshold voltage. It can also be said that the voltage is equal to the magnitude of the voltage.

[0099] Furthermore, in the second operation, whether the threshold voltage Vth of transistor 101 is positive or negative is... It can be operated regardless of the condition. This is because transistor 101 is in the off state. This is because the source potential of transistor 101 can be raised until that point. When the source potential of transistor 101 is higher than the gate potential of transistor 101 Finally, transistor 101 turns off, and Vgs101 becomes Vth. This is because it is capable. Therefore, transistor 101 is enhancement type (normally Whether it is an off-type or a depletion-type (normal-on-type), it will operate normally. It is possible.

[0100] Furthermore, when the potential of the anode of the light-emitting element 104a increases, current flows to the light-emitting element 104a. It is desirable to prevent current from flowing. To achieve this, current must not flow through the light-emitting element 104a. Therefore, it is preferable to set the potential Vi2 to a low value. However, this is one embodiment of the invention. The details are not limited to this. Furthermore, a switch is provided in series with the light-emitting element 104a, and By turning it off, it is possible to prevent current from flowing to the light-emitting element 104a. If available, the potential Vi2 can be a high value.

[0101] The third operation that takes place during period T13 will be described. During period T13, Figure 5(A) As shown, when switches 11 and 13 are in a conductive state and switch 12 is in a non-conductive state Yes. Also, as an example, potential Vi1 is supplied to wiring 21. Therefore, period T13 Then, as shown in Figure 6(A), a threshold voltage Vth (or depending on Vth) is applied to the capacitive element 102. A voltage of a certain magnitude is maintained, and the anode of the light-emitting element 104a becomes potential Vi1, The gate potential of ZISTA101 is the potential Vi1 + Vth (or a voltage of a magnitude corresponding to Vth). ) and the gate-source voltage of transistor 101 (Vgs101) is the threshold voltage Vt This results in a voltage of h (or a voltage of a magnitude corresponding to Vth). As a result, the ano of the light-emitting element 104a The potential of the circuit board, or the potential of the source of transistor 101, can be initialized.

[0102] Note that the third action described above is not necessarily required; the fourth action described below can be performed after the second action. You may make it perform the action.

[0103] Furthermore, the potential of wiring 21 during period T13 is not limited to potential Vi1, but may be of a different magnitude. It is also possible to set it to a position (for example, potential Vi3). However, wiring 21 in period T13 By setting the potential to potential Vi1, the configuration of circuit 201 can be simplified. Alternatively, if multiple circuits 100 are connected to the wiring 21, the power of the wiring 21 By setting the potential to Vi1, a certain circuit 100 is made to operate as a period T11, and a different In circuit 100, it can be operated as period T13, thus efficiently controlling the operating period. It can be used.

[0104] The fourth operation, which takes place during period T14, will be described. During period T14, Figure 5(A) As shown, switch 11 is in a conductive state, and switches 12 and 13 are in a non-conductive state. Yes. Also, potential Vsig is supplied to wiring 21. Therefore, during period T14, Figure 6( As shown in B), a threshold voltage Vth (or an electric current of a magnitude corresponding to Vth) is applied to the capacitive element 102. A voltage (which is a pressure) is maintained, and the capacitive element 103 maintains the voltage Vsig-Vi1-Vα, and light is emitted. The anode of element 104a has a potential of Vi1 + Vα, which is the potential of the gate of transistor 101. The potential becomes Vsig + Vth, and the gate-source voltage of transistor 101 (Vgs10) 1) is the voltage Vsig + Vth - Vi1 - Vα. Therefore, the potential Vsig is the capacitance element. It can be input to child 103. Alternatively, the voltage of capacitive element 102 and the voltage of capacitive element 103 can be input. The sum of the voltage and the other voltage can be made to equal the gate-source voltage of transistor 101.

[0105] In the fourth operation, the potential Vα is such that the anode of the light-emitting element 104a is in an electrically floating state (f This is the potential that fluctuates when the device enters a loading state. The potential Vα is the potential of transistor 101 If it is off, the capacitance of the light-emitting element 104a and the capacitance elements 102 and 10 The value is determined by the ratio of capacitances 3. However, depending on the height of the potential Vsig, Since transistor 101 is turned on, the light-emitting element 104a is activated via transistor 101. Charge flows into the node. Therefore, the potential Vα is determined solely by the ratio of the capacitances mentioned above. Furthermore, its value also changes depending on the charge flowing into the anode of the light-emitting element 104a.

[0106] Here, the gate-source voltage Vgs is set to an ideal value, i.e., the voltage Vsig + Vth - Vi To approach 1, it is preferable to design the system so that the potential Vα is small. Specifically, The capacitance of the light-emitting element 104a is greater than the capacitance of the capacitive elements 102 and 103. If the value is large enough, the gate-source voltage Vgs can be brought closer to the ideal value.

[0107] Therefore, the capacitance value of the capacitive element 103 is equal to the parasitic capacitance of the load 104 (light-emitting element 104a). It is desirable that the volume be smaller than the capacity value, preferably 1 / 2 or less, and more preferably 1 / 5. It is preferable that it be less than or equal to the double. Alternatively, the area of ​​the electrode of the capacitive element 103 is such that the load 104 (light-emitting element 1 It is desirable that the electrode area be smaller than that of 04a), preferably half the size or less, and more preferably More preferably, it is 1 / 5 or less. However, one embodiment of the present invention is not limited to these. It will not be done.

[0108] Furthermore, in order to bring the gate-source voltage (Vgs101) closer to the ideal value, the light-emitting element 10 It is desirable to reduce the amount of charge Q flowing into the anode of 4a. Therefore, the above charge amount To minimize Q, the period T14 should be as short as possible. Furthermore, as mentioned above, If a potential Vsig is supplied to wiring 21 during period T13, then during period T14, When switch 11 is in a conductive state, the potential of the gate of transistor 101 is set to potential Vsig It can quickly approach +Vth. Therefore, the period T14 can be shortened, and thus the charge amount This is desirable in terms of reducing Q.

[0109] Therefore, the length of period T14 is equal to the length of period T11, period T12, and / or period T13. It is preferable that it be smaller than the length, preferably 2 / 3 times or less, and more preferably 1 / 2 times. The following are preferred. However, embodiments of the present invention are not limited to these.

[0110] Furthermore, as mentioned above, a smaller charge Q is preferable, but the mobility of transistor 101 If the variation is large, the charge quantity Q can be expected to have the effect of suppressing the variation in mobility. The reason for this will be explained below.

[0111] The charge Q flows from the drain to the source of transistor 101 during period T14. This corresponds to the amount of electric charge. Therefore, the amount of charge Q increases as the mobility of transistor 101 increases. It becomes larger. And when the charge amount Q becomes larger, the trajectory during light emission of the light-emitting element 104a The gate-source voltage (Vgs101) of the charger 101 decreases. The greater the mobility of transistor 101, the more energy is supplied to light-emitting element 104a, depending on the quantity Q. A correction is applied to reduce the current value, and the smaller the mobility of transistor 101, the lower the current value. However, a correction is applied to ensure that the current value supplied to the light-emitting element 104a does not become too small. Therefore, the variation in mobility can be suppressed by the amount of charge Q.

[0112] Furthermore, the capacitance value of the capacitive element 102 is less than the capacitance value of the parasitic capacitance of the gate of transistor 101. It is desirable for it to be large, preferably more than twice as large, and more preferably more than five times as large. Alternatively, the area of ​​the electrodes of the capacitive element 102 is larger than the area of ​​the channel of the transistor 101. Larger is desirable, preferably more than twice as large, and more preferably more than five times as large. Alternatively, the area of ​​the electrodes of the capacitive element 102 is larger than the area of ​​the electrode of the transistor 101. It is desirable that it be high, preferably more than twice as high, and more preferably more than five times as high. As a result, a potential Vsig is input, and the capacitance element 102 and the gate capacitance of the transistor... When the voltage is divided by capacitance, the decrease in the voltage across the capacitive element 102 can be reduced. However, the embodiments of the present invention are not limited thereto.

[0113] Furthermore, the capacitance value of capacitive element 102 is approximately the same as that of capacitive element 103. Or, preferably, a larger value. The capacitance value of capacitive element 102 is the same as that of capacitive element 103. Preferably, the difference between the volume value and the actual volume value is ±20% or less, and more preferably ±10% or less. Yes. Or, the area of ​​the electrodes of capacitive element 102 is about the same as the area of ​​the electrodes of capacitive element 103. It is desirable that the size be a certain degree or larger. Therefore, the same layout Within the area, optimal operation can be performed. However, one embodiment of the present invention is This is not limited to this.

[0114] The fifth operation, which takes place during period T15, will be described. During period T15, Figure 5(A) As shown, switches 11, 12, and 13 are in a non-conductive state. During period T15, as shown in Figure 6(C), the threshold voltage Vth is maintained in the capacitive element 102. The voltage Vsig-Vi1-Vα is maintained in the capacitive element 103, and the light-emitting element 104a The node has a potential of Vel, and the gate potential of transistor 101 is Vsig + Vth. -Vi1-Vα+Vel, and the gate-source voltage of transistor 101 (Vgs10) 1) is the voltage Vsig + Vth - Vi1 - Vα. Therefore, depending on the potential Vsig A current of a certain magnitude can be passed through the light-emitting element 104a, and the light-emitting element emits light with brightness corresponding to the potential Vsig. Sub-unit 104a can be made to emit light.

[0115] The potential Vel is determined when current is passed through the transistor 101 to the light-emitting element 104a. This is the resulting potential. Specifically, it is the potential between potential VDD and potential Vcat.

[0116] In the fifth operation described above, the gate-source voltage (Vgs101) of transistor 101 is controlled by the electric current. Let the voltage Vsig + Vth - Vi1 - Vα, and take into account the threshold voltage Vth of transistor 101. It can be set to a value. Therefore, with the above configuration, the threshold voltage of transistor 101 This prevents variations in Vth from affecting the current value supplied to the light-emitting element 104a. Yes, it is possible. Alternatively, even if transistor 101 degrades and the threshold voltage Vth changes, the above changes This prevents the current supplied to the light-emitting element 104a from being affected. Therefore, It can reduce display inconsistencies and provide high-quality displays.

[0117] Similarly, the gate-source voltage (Vgs101) of transistor 101 is given by the voltage Vsig+ Vth-Vi1-Vα can be set to values ​​independent of Vel. Therefore, variations in the voltage-current characteristics of the light-emitting element 104a affect the current supplied to the light-emitting element 104a. This can prevent the value from being affected. Alternatively, if the light-emitting element 104a deteriorates, the light-emitting element Even if the voltage-current characteristics of sub 104a change and Vel changes, the above change does not affect the light-emitting element 104 This prevents affecting the current value supplied to a. Therefore, display unevenness can be reduced. This allows for high-quality labeling.

[0118] Furthermore, during a portion of the fifth operation, transistor 101 is forcibly turned off. In this way, it is also possible to create a situation in which the light-emitting element 104a does not emit light. It is also possible to provide a non-illumination period. For example, by turning on switch 12 It is possible to turn off transistor 101.

[0119] In addition, in the semiconductor device according to one aspect of the present invention, in the second operation, transistor 101 The gate is kept at potential Vi2. Due to the above operation, transistor 101 is normally on. However, even if the threshold voltage Vth has a negative value, transistor 101 In this state, the capacitance element 102 accumulates until the source potential becomes higher than the gate potential Vi2. It can release the charge that has been discharged. Therefore, in a semiconductor device according to one aspect of the present invention, Even if transistor 101 is normally on, in the fifth operation described above, The gate-source distance of transistor 101 is adjusted so that the value includes the threshold voltage Vth of transistor 101. The voltage (Vgs101) can be set.

[0120] Furthermore, schematic diagrams of circuit 100 during periods T11 to T15 are shown in Figures 7(A) to 7. (E) is shown below. A semiconductor device according to one aspect of the present invention has a circuit 100 which is set in each of the above periods. It is sufficient if the structure shown in Figures 7(A) to 7(E) is adopted in between. A semiconductor device according to one aspect of the invention is not limited to a circuit 100 having the configuration shown in Figures 1 to 4. It is not done. A semiconductor device according to one aspect of the present invention, in circuit 100, Figure 7( The arrangement and number of switches, and the supply of various potentials, can be configured to take the structure shown in A) to Figure 7(E). The number of wires used for this process can be changed as needed.

[0121] Furthermore, in the circuit 100 shown in Figure 1(B), the semiconductor device according to one aspect of the present invention has a negative The present invention may further include a capacitive element 105 connected to the load 104. Similarly, one The semiconductor device according to this embodiment has a light-emitting element 104a and in the circuit 100 shown in Figure 1(C) It may further have connected capacitive elements 105. Similarly, according to one aspect of the present invention The semiconductor device is connected to the light-emitting element 104b in the circuit 100 shown in Figure 1(D). It may also have a capacitive element 105.

[0122] The semiconductor device shown in Figure 8(A) is configured in the circuit 100 shown in Figure 1(B) with load 104 and It further has connected capacitive elements 105. Specifically, one of the capacitive elements 105 The electrodes are the other electrode of the capacitive element 103 and the source or drain of the transistor 101. One side is connected. The other electrode of the capacitive element 105 is connected to the wiring 26. Figure 8(A) shows an example where circuit 100 has a load 104. However, in Figure 8(A), instead of load 104, light-emitting element 104a or light-emitting element 104 It is also acceptable to use b.

[0123] Furthermore, wiring 26 can be connected to various other wirings. For example, wiring 22, wiring 23, wiring 24, or wiring of another circuit 100, scan lines, gate lines, transistor gates It can be connected to wiring connected to the jack, etc. This reduces the number of wires. It is possible.

[0124] The semiconductor device shown in Figure 8(B) has wiring 26 arranged in the circuit 100 shown in Figure 8(A). An example of connecting to line 24 is shown. Note that in Figure 8(B), circuit 100 is connected to load 104. While one example is shown, in Figure 8(B), light emission is used instead of load 104. Element 104a or light-emitting element 104b may be used. Connect in this manner. This allows for a reduction in the number of wires (26).

[0125] The semiconductor device shown in Figure 8(C) has wiring 26 arranged in the circuit 100 shown in Figure 8(A). An example of connecting to line 23 is shown. Note that in Figure 8(C), circuit 100 is connected to load 104. While one example is shown, in Figure 8(C), light emission is used instead of load 104. Element 104a or light-emitting element 104b may be used. Connect in this manner. This allows for a reduction in the number of wires (26).

[0126] The semiconductor device shown in Figure 8(D) has wiring 26 arranged in the circuit 100 shown in Figure 8(A). An example of connecting to line 22 is shown. Note that in Figure 8(D), circuit 100 is connected to load 104. While one example is shown, in Figure 8(D), light emission is used instead of load 104. Element 104a or light-emitting element 104b may be used. Connect in this manner. This allows for a reduction in the number of wires (26).

[0127] The capacitive element 105 connected to the load 104, the light-emitting element 104a or the light-emitting element 104b By adding to circuit 100, the third and fourth operations described in this embodiment can be performed. This suppresses the charge fluctuation in either the source or drain of transistor 101. Therefore, the voltage Vα can be reduced. Thus, the gate-source voltage Vg s can be brought closer to the ideal value, i.e., the voltage Vsig + Vth - Vi1, and the load 1 04. The current supplied to the light-emitting element 104a or light-emitting element 104b is precisely controlled by the voltage Vsig. The value can be brought closer to the value reflected in the calculation.

[0128] Alternatively, by appropriately adjusting the capacitance value of the capacitive element 105, the amount of charge during period T14 can be determined. The amount of change in potential due to Q can be adjusted. This reduces the variation in mobility. This allows for more appropriate execution.

[0129] Furthermore, the electrode area of ​​the capacitive element 105 is greater than the electrode area of ​​the load 104 (light-emitting element 104a). It is desirable for the difference to be small, preferably 1 / 2 times or less, and more preferably 1 / 3 times or less. It is suitable. Alternatively, the capacitance value of the capacitive element 105 is the capacitance of the load 104 (light-emitting element 104a). It is desirable for the value to be smaller than the given value, preferably 1 / 2 times or less, and more preferably 1 / 3 times or less. This is preferable. This allows for optimal operation within the same layout area. It will come. However, one embodiment of the present invention is not limited thereto.

[0130] Furthermore, the area of ​​the electrodes of the capacitive element 105 and the area of ​​the electrodes of the load 104 (light-emitting element 104a) The total area should preferably be larger than the electrode area of ​​the capacitive element 103, preferably more than twice as large. More preferably, it is preferable that it be 5 times or more. Alternatively, the capacitance value of the capacitive element 105 and the load 10 The sum of the capacitance values ​​of 4 (light-emitting element 104a) is greater than the capacitance value of the capacitive element 103. Preferably, more preferably, it should be 2 times or more, and more preferably, 5 times or more. The voltage between the capacitive element 103, the capacitive element 105, and the load 104 (light-emitting element 104a) is When the voltage is divided, it is possible to apply a larger voltage to the capacitive element 103. However, the embodiments of the present invention are not limited thereto.

[0131] Note that the electrode area of ​​the capacitive element 105 is the surface area of ​​the electrode of the capacitive element 102 or the capacitive element 103. It is desirable that the product be smaller than the product, preferably 1 / 2 times or less, and more preferably 1 / 3 times or less. This is preferable. Alternatively, the capacitance value of the capacitive element 105 is the capacitance value of the capacitive element 102 or the capacitance element 10 It is desirable that the capacity value be smaller than 3, preferably 1 / 2 times or less, and more preferably 1 / A ratio of 3 times or less is preferable. This allows for optimal operation within the same layout area. This is possible. However, one embodiment of the present invention is not limited thereto.

[0132] Furthermore, a semiconductor device according to one aspect of the present invention is the circuit 10 shown in Figures 8(A) to 8(D) In addition to 0, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is further It's okay to have it.

[0133] The semiconductor device shown in Figures 9(A) to 9(D) is the same as the circuit shown in Figures 8(A) to 8(D) 1 In addition to 00, there is a circuit 201 that has the function of supplying a constant voltage or signal to wiring 21, and wiring 2 Circuit 202 has the function of supplying a constant voltage or signal to 2, and wiring 23 has the function of supplying a constant voltage or signal A circuit 203 that has a supply function and a wiring 24 that has a function to supply a constant voltage or signal It has circuits 204 and each of them. Furthermore, the circuit 100 shown in Figure 9(A) has wiring 26 It has a circuit 208 that has the function of supplying a constant voltage or signal. An example of circuit 208 is: There are power supply circuits, etc. Therefore, wiring 26 has the function of transmitting a predetermined potential. , or has the function to supply. Alternatively, wiring 26 is a capacity wiring and It has the function of being such. Furthermore, it is desirable that the potential of wiring 26 be a constant potential. However, one embodiment of the present invention is not limited thereto, and may vary like a pulse signal. .

[0134] Furthermore, any of the circuits 100 in Figures 1(B) to 1(D) or 8(B) to 8(D) They may also be used as pixels in a display device. And pixels corresponding to multiple hues are displayed. If provided in the display device, the transistor 101 of the pixel is determined by the corresponding hue. The ratio of channel width to channel length may be different. Similarly, the capacitance element of a pixel The capacity value of sub-unit 105 may also differ depending on the corresponding hue.

[0135] Figure 10(A) shows the case where the circuit 100 shown in Figure 1(B) is used as a pixel of a display device. This is shown as an example. In Figure 10(A), circuit 100(R) corresponds to the red (R) pixel. This corresponds to the pixel corresponding to green (G) in circuit 100(G), and the pixel corresponding to blue in circuit 100(B). This corresponds to the pixel corresponding to (B). In one aspect of the present invention, the circuit 100(R) has a trace Transistor 101(R), transistor 101(G) of circuit 100(G), and circuit In at least one of the transistors 100(B) and 101(B), the channel The ratio of the channel width to the channel length may differ from others. With the above configuration, circuit 100(R) The load 104(R) that the circuit 100(G) has, the load 104(G) that the circuit 100( The current supplied to each of the loads 104(B) in B) can be set to different values. Yes, it is possible. For example, the channel width and channel of transistor 101 corresponding to the second color. The ratio of the lengths is preferably 1.2 times or more than that of transistor 101 corresponding to the first color. Preferably, it is 1.5 times or more. And the third color corresponding to the tiger The ratio of channel width to channel length of transistor 101 corresponds to the first color of transistor 10 Preferably, it is 1.5 times or more than 1, and more preferably 2 times or more. However, the embodiments of the present invention are not limited thereto.

[0136] Furthermore, in Figure 10(B), the circuit 100 shown in Figure 8(A) is used as a pixel of the display device. This is shown as an example. In the case of Figure 10(B), similar to Figure 10(A), circuit 100 (R) has transistor 101(R) and circuit 100(G) has transistor 1 01(G) and at least one of the transistors 101(B) in circuit 100(B) However, the ratio of channel width to channel length may differ from others. With the above configuration, the circuit The load 104(R) on 100(R), the load 104(G) on circuit 100(G), The current supplied to each of the loads 104(B) of circuit 100(B) is set to a different value. It can be determined.

[0137] Furthermore, in the case of Figure 10(B), the capacitive element 105(R) of circuit 100(R) and circuit 1 Capacitive element 105(G) of 00(G) and capacitive element 105 of circuit 100(B) In at least one of (B), the capacity value may differ from the others. The capacitance value of the capacitive element 105 corresponding to the second color is equal to the capacitance value of the capacitive element 105 corresponding to the first color. Preferably, it is 1.2 times or more, and more preferably 1.5 times or more. And the capacitance value of the capacitance element 105 corresponding to the third color is the capacitance value of the capacitance element corresponding to the first color. It is preferable that the amount be 1.5 times or more, and more preferably 2 times or more, than that of child 105. However, the embodiments of the present invention are not limited thereto.

[0138] Note that in Figures 10(A) and 10(B), circuit 100(R) has load 104(R). Circuit 100(G) has a load 104(G), and circuit 100(B) has a load 104(B) The example shown is one case where there is a load, but in Figure 10(A) or Figure 10(B), Instead of 104(R), load 104(G), or load 104(B), use the corresponding color for each hue. A light-emitting element 104a or light-emitting element 104b may also be used.

[0139] Furthermore, in Figure 10(B), the circuit 100 shown in Figure 8(A) is used as a pixel of the display device. The example shown is one case, but the circuit 100 shown in Figures 8(B) to 8(D) is shown in the table. It may also be used as a pixel in a display device.

[0140] Next, the circuit 100 shown in Figure 11(A) is a semiconductor device according to one embodiment of the present invention. Path 100 consists of switch 11, switch 12, switch 13, switch 14, and transistor. It has 101, a capacitive element 102, and a capacitive element 103. Note that in Figure 11(A), the transient This shows an example where STA101 is an n-channel type. Figure 11(A) is shown in Figure 1( This corresponds to the configuration in A) with switch 14 added. Therefore, as described in Figure 1(A), etc. This can also be applied to Figure 11(A), etc.

[0141] Specifically, in Figure 11(A), the switch 11 connects the wiring 21 and one of the capacitive elements 102. It has the function of controlling the conductivity state between the electrode or one electrode of the capacitive element 103. Chi 12 is connected to the wiring 22 and the other electrode of the capacitive element 102, or the gate of the transistor 101. It has the function of controlling the conductivity state between the transistor 101 and the switch 13. One electrode of the drain or the other electrode of the capacitive element 103, and one electrode of the capacitive element 102 It has the function of controlling the conductivity between one electrode or one electrode of the capacitive element 103. Switch 14 either connects the source or drain of transistor 101, or a capacitive element It has the function of controlling the conductivity between the other electrode of 103 and the wiring 25. Transis The source or drain of transistor 101 is connected to wiring 23. Transistor 1 One of the source or drain electrodes of 01 and the other electrode of the capacitive element 103 are connected to the wiring 24. It is being done.

[0142] Furthermore, the circuit 100 shown in Figure 11(A) has a load 104 as shown in Figure 11(B). It is also acceptable. In the circuit 100 shown in Figure 11(B), the load 104 is connected to the transistor 101 Between one of the source or drain electrodes of the capacitive element 103, or the other electrode of the capacitive element 103, and the wiring 24 Connected.

[0143] Figure 11(C) shows the configuration of circuit 100 when a light-emitting element 104a is used as the load 104. Figure 11(C) shows the result. In Figure 11(C), the anode of the light-emitting element 104a is the socket of the transistor 101. It is connected to one of the drain or socket and the other electrode of the capacitive element 103, and is a light-emitting element. This example shows the case where the cathode of 104a is connected to wiring 24.

[0144] Furthermore, Figure 11(D) shows the circuit 10 when a light-emitting element 104b is used as the load 104. The configuration of 0 is shown. In Figure 11(D), the cathode of the light-emitting element 104b is connected to the transistor 10 It is connected to either the source or drain of 1, or to the other electrode of the capacitive element 103. As an example, the case where the anode of the light-emitting element 104b is connected to the wiring 24 is shown. In addition, Figure 11(D) shows an example where transistor 101 is a p-channel type. This is what is being shown.

[0145] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagrams in Figures 11(A) to 11(D). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0146] The semiconductor devices shown in Figures 12(A) to 12(D) are the same as those shown in Figures 11(A) to 11(D). In addition to circuit 100, there is circuit 220 which has the function of supplying a constant voltage or signal to wiring 21. The circuit 221 has the function of supplying a constant voltage or signal to the wiring 22, and the circuit 221 has the function of supplying a constant voltage to the wiring 23. Circuit 222 has the function of supplying signals, and wiring 24 has the function of supplying a constant voltage or signal. Circuit 223 having a function to supply a constant voltage or signal to wiring 25, and Circuit 224 having a function to supply a constant voltage or signal to wiring 25 They each possess the following characteristics.

[0147] Specifically, circuit 220 has the function of supplying potential Vsig to wiring 21. An example of 0 is a source driver (signal line driving circuit). Therefore, wiring 21 It has the function of being able to transmit or supply electric potential Vsig. Alternatively, wiring 21 functions as a video signal line.

[0148] Furthermore, circuit 221 has the function of supplying potential Vi2 to wiring 22. Example of circuit 221 Examples include power supply circuits. Therefore, wiring 22 can transmit the potential Vi2. It has the ability to perform or supply functions. Alternatively, wiring 22 is initially It functions as wiring for periodic changes. Furthermore, the potential of wiring 22 is constant. While this is preferable, one embodiment of the present invention is not limited thereto, and changes such as pulse signals You may move it.

[0149] Furthermore, circuit 222 has a power supply potential (high power supply potential or low power supply potential) connected to wiring 23, for example, It has the function of supplying potential VDD or potential VSS. An example of circuit 222 is... There are power source circuits, etc. Therefore, wiring 23 has the function of transmitting the power potential, It has the function of being able to supply. Alternatively, wiring 23 is transistor 101 It has the function of being able to supply current to the load 104. Alternatively, the wiring 23 can supply current to the load 104. It has the function of supplying current. Alternatively, wiring 23 functions as a power line. It has. Alternatively, wiring 23 has the function of a current supply line. While it is desirable that the potential of 23 be constant, in one embodiment of the present invention, this It is not limited to this, and may fluctuate like a pulse signal. For example, the potential of wiring 23 is load 1 The potential at 04 may be such that not only a forward bias voltage but also a reverse bias voltage is applied. .

[0150] Furthermore, circuit 223 has a power supply potential (low power supply potential or high power supply potential) connected to wiring 24, for example, It has the function of supplying potential Vcat. An example of circuit 223 is a power supply circuit. Therefore, the wiring 24 has the function of being able to transmit or supply power potential. It has the capability to do so. Alternatively, wiring 24 can supply current to load 104. It has the function of supplying current to transistor 101. It has the capability to do so. Alternatively, wiring 24 has the function of a common line. Wiring 24 functions as a cathode wire. Alternatively, wiring 24 functions as an anode wire. It has the function of being such. Furthermore, it is desirable that the potential of wiring 24 be a constant potential. However, one embodiment of the present invention is not limited thereto, and may vary like a pulse signal. For example, the potential of wiring 24 is such that the load 104 has a forward bias voltage as well as a reverse bias voltage. It could also be a potential that applies pressure.

[0151] Furthermore, circuit 224 has the function of supplying potential Vi1 to wiring 25. Example of circuit 224 Examples include power supply circuits. Therefore, wiring 25 can transmit the potential Vi1. It has the ability to perform or supply functions. Alternatively, wiring 25 is initially It functions as wiring for periodic installation. Furthermore, the potential of wiring 25 is constant. While this is preferable, one embodiment of the present invention is not limited thereto, and changes such as pulse signals You may move it.

[0152] In addition to circuit 100, the semiconductor device also includes circuit 2 in Figures 12(A) to 12(D). 20, a case having circuits 221, 222, 223, and 224 is one example. As shown, the semiconductor device according to one aspect of the present invention does not necessarily have circuit 220, circuit 221, It is not necessary to have all three circuits, 222, 223, and 224; any one of them is sufficient. It is acceptable to have only multiple instances of something.

[0153] Note that the circuit 100 shown in Figures 11 and 12 is, as an example, a switch 11, a switch 1 2. Transistors can be used for switches 13 and 14.

[0154] In the circuit 100 shown in Figures 11(A) to 11(D), the switch 11 is a transistor Transistor 12 as switch 12, transistor 13 as switch 13 Configuration of circuit 100 when transistor 14t is used as the 13t switch and the 14t switch. This is shown in Figures 13(A) to 13(D). Note that in Figures 13(A) to 13(D), Transistor 11t, transistor 12t, transistor 13t, and transistor 14 This example shows the case where all t are n-channel type. Transistor 11t, Transistor The 12-turn transistor, 13-turn transistor, and 14-turn transistor are all of the same polarity. By doing so, these transistors can be manufactured with fewer manufacturing steps. However, this invention One embodiment is not limited thereto, and transistors with different polarities may also be used. It is Noh.

[0155] In Figures 13(A) to 13(D), transistor 11t has a gate connected to wiring 3. It is connected to 1. According to the potential supplied to the wiring 31, transistor 11t is conductive. It enters a conductive or non-conductive state. Transistor 12t has its gate connected to wiring 32. Depending on the potential supplied to the wiring 32, transistor 12t will be in a conducting or non-conducting state. This is the result. Transistor 13t has its gate connected to wiring 33. The power supplied to wiring 33 is Depending on the potential, transistor 13t will be in a conducting or non-conducting state. The gate of the 14t is connected to wiring 34. According to the potential supplied to wiring 34, Transistor 14t will be in a conductive or non-conductive state. Therefore, wiring 31 to wiring The potential of 34 is preferably pulsed and not constant, but in one embodiment of the present invention The embodiments are not limited thereto. Alternatively, wiring 31 to 34 may be gate signal lines, select signal lines. It functions as a line or scan line.

[0156] Furthermore, in wiring 31 to 34, at least two of the wirings are connected to each other. It is possible to connect them. Alternatively, at least one of the wires 31 to 34 can be connected to another circuit 1. It is possible to connect to at least one of the wirings 31 to 34 of 00.

[0157] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 13(A) to 13(D). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0158] The semiconductor device shown in Figures 14(A) to 14(D) is shown in Figures 13(A) to 13(D). In addition to circuit 100, there is circuit 230 which has the function of supplying a constant voltage or signal to wiring 31. The circuit 231 has the function of supplying a constant voltage or signal to the wiring 32, and the circuit 231 has the function of supplying a constant voltage to the wiring 33. Circuit 232 has the function of supplying signals, and wiring 34 has the function of supplying a constant voltage or signal. Circuits 230, 231, 232, and 230 each have a circuit 233 that has a circuit 230, 231, 232, and 230. Examples of 233 include gate drivers (scan line driving circuits).

[0159] In addition to circuit 100, the semiconductor device also includes circuit 2 in Figures 14(A) to 14(D). The example shown is one case where circuit 231, circuit 232, and circuit 233 are present. A semiconductor device according to one aspect of the present invention does not necessarily include circuits 230, 231, 232, And it is not necessary to have all of the circuits 233; having only one or more of them is sufficient. That's good too.

[0160] Note that circuits 220, 221, 222, 223, 224, 230, Path 231, circuit 232, and circuit 233 may be the same circuit, or they may be separate circuits. It's okay to have it.

[0161] Furthermore, in the circuit 100 shown in Figure 13(C), transistor 101 and transistor 14t is an n-channel type, transistor 11t, transistor 12t, and transistor 1 Figure 38(A) shows the configuration of circuit 100 when 3t is a p-channel type. Also, Figure 13 In the circuit 100 shown in (D), transistor 101 and transistor 14t are p-type Channel type, transistor 11t, transistor 12t, and transistor 13t are n channel Figure 38(B) shows the configuration of circuit 100 when it is a Nell type.

[0162] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 38(A) and 38(B). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0163] The semiconductor device shown in Figures 38(C) and 38(D) is shown in Figures 38(A) and 38(B). In addition to circuit 100, there is circuit 230 which has the function of supplying a constant voltage or signal to wiring 31. The circuit 231 has the function of supplying a constant voltage or signal to the wiring 32, and the circuit 231 has the function of supplying a constant voltage to the wiring 33. Circuit 232 has the function of supplying signals, and wiring 34 has the function of supplying a constant voltage or signal. Each has a circuit 233 which has the following:

[0164] Note that in Figures 38(C) and 38(D), the semiconductor device includes circuit 2 in addition to circuit 100. The example shown is one case where circuit 231, circuit 232, and circuit 233 are present. A semiconductor device according to one aspect of the present invention does not necessarily include circuits 230, 231, 232, And it is not necessary to have all of the circuits 233; having only one or more of them is sufficient. That's good too.

[0165] Note that transistor 101 often operates in the saturation region when current is flowing through it. In Figures 13, 14, and 38, the channel length or gate of transistor 101 is shown. The length of transistor 11t, transistor 12t, transistor 13t, and / or It is desirable that it be longer than transistor 14t. Preferably, 5 times or more, more preferably Ideally, it should be 10 times or more. For example, the channel of transistor 101 The channel length or gate length is 10 μm or more, more preferably 20 μm or more. By increasing the length or gate length, the characteristics in the saturation region become flatter, and the kink effect is reduced. The effect can be reduced. Alternatively, the channel width or gate width of transistor 101 can be changed. , transistor 11t, transistor 12t, transistor 13t, and / or, By making transistor 101 longer than transistor 14t, transistor 101 can also in the saturation region. This allows a large current to flow. Preferably, 5 times or more, more preferably 10 times or more. It is desirable that the channel width or gate width of transistor 101 be 20 μm or larger. , more preferably 30 μm or more. However, in one embodiment of the present invention, this is... Not limited.

[0166] Furthermore, the semiconductor equipment shown in Figures 13(A) to 13(D) and Figures 38(A) and 38(B) In this configuration, transistor 12t and transistor 13t both have one gate. It may also be connected to Figure 15(A) to Figure 15(D), and Figure 13(A) to Figure 13( In the semiconductor device shown in D), the gates of transistor 12t and transistor 13t are As an example, the case where it is connected to wiring 32 is shown. According to the potential supplied to wiring 32 Transistors 12t and 13t will then be either conducting or not conducting.

[0167] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 15(A) to 15(D). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0168] The semiconductor device shown in Figures 16(A) to 16(D) is the same as the one shown in Figures 15(A) to 15(D). In addition to circuit 100, there is circuit 230 which has the function of supplying a constant voltage or signal to wiring 31. The circuit 231 has the function of supplying a constant voltage or signal to the wiring 32, and the circuit 231 has the function of supplying a constant voltage to the wiring 34. It also has a circuit 233 that has the function of supplying signals.

[0169] In addition to circuit 100, the semiconductor device also includes circuit 2 in Figures 16(A) to 16(D). While the case with circuit 30, circuit 231, and circuit 233 is shown as an example, the present invention is one The semiconductor device according to this embodiment does not necessarily have all of circuits 230, 231, and 233. It is not necessary to have all of them; having only one or more of them is sufficient.

[0170] Furthermore, in the circuit 100 shown in Figure 16(C), transistor 101, transistor 11 t, and transistor 14t are n-channel type, transistor 12t, and transistor 1 Figure 42(A) shows the configuration of circuit 100 when 3t is a p-channel type. Also, Figure 16 In the circuit 100 shown in (D), transistor 101, transistor 11t, and transistor Transistor 14t is p-channel type, transistors 12t and 13t are n-channel type. The configuration of circuit 100 in the case of a Nell type is shown in Figure 42(B).

[0171] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 42(A) and 42(B). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0172] The semiconductor device shown in Figures 42(C) and 42(D) is shown in Figures 42(A) and 42(B). In addition to circuit 100, there is circuit 230 which has the function of supplying a constant voltage or signal to wiring 31. The circuit 231 has the function of supplying a constant voltage or signal to the wiring 32, and the circuit 231 has the function of supplying a constant voltage to the wiring 34. Circuits 230 and 233 each have the function of supplying signals. 1. An example of circuit 233 is a gate driver (scan line driving circuit).

[0173] Note that in Figures 42(C) and 42(D), the semiconductor device includes circuit 2 in addition to circuit 100. While the case with circuit 30, circuit 231, and circuit 233 is shown as an example, the present invention is one The semiconductor device according to this embodiment does not necessarily have all of circuits 230, 231, and 233. It is not necessary to have all of them; having only one or more of them is sufficient.

[0174] Furthermore, in the semiconductor device shown in Figures 13(A) to 13(D), between adjacent circuits 100 And the gate of one transistor may be connected to the gate of another transistor. For example, the gates of transistor 11t and transistor 14t may be connected. (Figure 3) 9. The gate of transistor 11t in circuit 100(i,j) in column i, row j, and column i. The gate of transistor 14t in circuit 100(i, j+1) in row j+1 is This example shows the case where the eye wiring 31(j) is connected.

[0175] Furthermore, in the semiconductor device shown in Figures 15(A) to 15(D), between adjacent circuits 100 And the gate of one transistor may be connected to the gate of another transistor. For example, the gates of transistor 11t and transistor 14t may be connected. (Figure 4) 0, the gate of transistor 11t in circuit 100(i,j) in column i and row j, and column i The gate of transistor 14t in circuit 100(i, j+1) in row j+1 is This example shows the case where the eye wiring 31(j) is connected.

[0176] Note that in Figures 39 and 40, the gate of transistor 11t in circuit 100 in row j is shown. And the gate of transistor 14t in circuit 100 on line j+1 is connected to wiring 3 on line j. The case where it is connected to 1(j) is shown as an example. However, one aspect of the present invention is The configuration is not limited to, for example, Figures 14(A) to 14(D), Figure 38(C) and Figure 38( In the semiconductor device shown in D), circuit 230 is connected to the j-th row wiring 31(j) and the j+1-th row It is also possible to supply potential to the wiring 34(j+1).

[0177] Figure 41 shows how the circuit 230 supplies potential to wires 31 and 34. Specifically, in Figure 41, the output from the j-th output terminal out(j) of circuit 230 is The potential is applied to the j-th row wiring 31(j) and the j+1-th row wiring 34(j+1). In other words, this means, for example, that different rows of wiring are used between the scan line driving circuit and the pixel area. This is equivalent to connecting something.

[0178] Next, using the circuit 100 shown in Figure 11(C) as an example, the operation of one embodiment of the semiconductor device of the present invention will be explained. I will explain this.

[0179] The operation of circuit 100 shown in Figure 11(C) mainly consists of the first operation, the second operation, the third operation, and the It can be divided into 4 operations. However, one embodiment of the present invention is not limited thereto. Furthermore, it is possible to add new actions or delete some of the existing ones.

[0180] Note that in Figure 11(C), a switch 14 has been added to the circuit in Figure 1(C). Therefore, it is possible to delete the third operation (period T13) shown in Figure 6(A).

[0181] In the circuit 100 shown in Figure 11(C), switches 11, 12, and 13, The operation of switch 14, the potential of wiring 21, and the gate-source voltage of transistor 101 An example of a timing chart showing pressure (Vgs101) is illustrated in Figure 17(A).

[0182] First, we will explain the first operation that takes place during period T11. During period T11, Figure 1 As shown in 7(A), switch 11 is in a non-conductive state, switch 12, switch 13, and Switch 14 is in a conductive state. Therefore, during period T11, as shown in Figure 17(B), A voltage Vi2-Vi1 is supplied to the capacitive element 102, and the anode of the light-emitting element 104a is at potential V i1 is obtained, and the gate-source voltage of transistor 101 (Vgs101) is the voltage Vi2 -Vi1. In other words, transistor 101 and capacitive element 102 are initialized. This will happen.

[0183] Furthermore, if the potential of the wiring 21 does not have an adverse effect, the switch 11 will remain in a conductive state. This is also acceptable. In that case, switch 14 may be in a non-conductive state.

[0184] Note that switch 13 may be in a non-conductive state.

[0185] The second operation that takes place during period T12 will be described. During period T12, Figure 17(A As shown in (), switches 11 and 14 are in a non-conductive state, and switches 12 and 14 are in a non-conductive state. Switch 13 is in a conductive state. Switches 11 and 14 become non-conductive, The charge accumulated in the element 102 is released through the transistor 101, and the transistor The potential of the source of transistor 101 rises. Then, when transistor 101 turns off, The discharge of charge from the capacitive element 102 stops. Ultimately, the threshold voltage of transistor 101 is reached. Vth is held in the capacitive element 102. Therefore, during period T12, as shown in Figure 17(C) Therefore, the threshold voltage Vth is maintained in the capacitive element 102, and the anode of the light-emitting element 104a is at a potential Vi2 becomes Vth, and the gate-source voltage of transistor 101 (Vgs101) is, This is the threshold voltage Vth. In other words, the threshold voltage Vth of transistor 101 can be obtained. It is possible.

[0186] Note that it takes time for Vgs101 to become equal to the threshold voltage Vth of transistor 101. This can sometimes require a very long time. Therefore, Vgs101 is the threshold voltage. In many cases, it is operated without completely reducing the Vth. In other words, Vgs101 is In some cases, the period T12 ends with the voltage Vth being slightly greater than the specified value. That's a lot. In other words, at the end of period T12, Vgs101 is corresponding to the threshold voltage. It can also be said that the voltage is equal to the magnitude of the voltage.

[0187] Furthermore, in the second operation, whether the threshold voltage Vth of transistor 101 is positive or negative is... It can be operated regardless of the condition. This is because transistor 101 is in the off state. This is because the source potential of transistor 101 can be raised until that point. When the source potential of transistor 101 is higher than the gate potential of transistor 101 Finally, transistor 101 turns off, and Vgs101 becomes Vth. This is because it is capable. Therefore, transistor 101 is enhancement type (normally Whether it is an off-type or a depletion-type (normal-on-type), it will operate normally. It is possible.

[0188] Furthermore, when the potential of the anode of the light-emitting element 104a increases, current flows to the light-emitting element 104a. It is desirable to prevent current from flowing. To achieve this, current must not flow through the light-emitting element 104a. Therefore, it is preferable to set the potential Vi2 to a low value. However, one embodiment of the present invention The embodiment is not limited thereto. Furthermore, a switch may be provided in series with the light-emitting element 104a. By turning it off, it is possible to prevent current from flowing to the light-emitting element 104a. In that case, the potential Vi2 can be a high value.

[0189] The third operation that takes place during period T13 will be described. During period T13, Figure 17(A As shown in the image, switches 11 and 14 are in a conductive state, and switches 12 and 14 are in a conductive state. 13 is in a non-conductive state. Also, potential Vsig is supplied to wiring 21. Therefore, during the period In T13, as shown in Figure 18(A), a threshold voltage Vth (or Vt) is applied to the capacitive element 102. A voltage (which is of a magnitude corresponding to h) is maintained, and the voltage Vsig-Vi1 is applied to the capacitive element 103. The light-emitting element 104a is held, and the anode of the light-emitting element 104a is at potential Vi1, and the gate of transistor 101 The potential of the gate is Vsig + Vth, and the gate-source voltage of transistor 101 is (V gs101) is a voltage Vsig + Vth - Vi1. Therefore, the potential Vsig is a capacitance. It can be input to element 103. Alternatively, the voltage of capacitive element 102 and the voltage of capacitive element 103 The sum of the voltages can be made to equal the gate-source voltage of transistor 101. .

[0190] It is also possible to set switch 14 to a non-conductive state at this time.

[0191] The fourth operation, which takes place during period T14, will be described. During period T14, Figure 17(A As shown in (), switches 11, 12, 13, and 14 are non-conductive. The state is normal. Therefore, during period T14, as shown in Figure 18(B), the capacitance element 102 The threshold voltage Vth is maintained, the voltage Vsig-Vi1 is maintained in the capacitive element 103, and the light-emitting element The anode of child 104a is at potential Vel, and the gate of transistor 101 is at potential V sig + Vth + Vel, and the gate-source voltage of transistor 101 (Vgs 10) 1) is the voltage Vsig + Vth - Vi1. Therefore, the magnitude corresponds to the potential Vsig. The current can be passed through the light-emitting element 104a, and the light-emitting element 10 will have a brightness corresponding to the potential Vsig. It is possible to make 4a emit light.

[0192] In the fourth operation described above, the gate-source voltage (Vgs101) of transistor 101 is set to V Set sig + Vth - Vi1 to a value that takes into account the threshold voltage Vth of transistor 101. This is possible. Therefore, with the above configuration, the threshold voltage Vth of transistor 101 can be increased. This prevents the vibration from affecting the current value supplied to the light-emitting element 104a. Alternatively, even if transistor 101 deteriorates and the threshold voltage Vth changes, the above change will affect the light-emitting element. This prevents the current value supplied to child 104a from being affected. Therefore, display unevenness can be prevented. It can reduce noise and enable high-quality display.

[0193] Similarly, the gate-source voltage (Vgs101) of transistor 101 is given by the voltage Vsig+ Vth-Vi1 can be set to a value independent of Vel. With the above configuration, Variations in the voltage-current characteristics of the light-emitting element 104a affect the current value supplied to the light-emitting element 104a. It can prevent the light-emitting element 104a from deteriorating, Even if the voltage-current characteristics of 4a change and Vel changes, the above change is supplied to the light-emitting element 104a. This prevents the supplied current value from being affected. Therefore, display unevenness can be reduced, and the quality can be improved. It can display information effectively.

[0194] Furthermore, during a portion of the fourth operation, transistor 101 is forcibly turned off. This also prevents current from flowing through the light-emitting element 104a, so that the light-emitting element 104a does not emit light. It is also possible to create such a situation. In other words, it is possible to introduce a period of non-luminescence. Example For example, by turning on switch 12, transistor 101 is turned off. This is possible. Alternatively, by turning on switch 14, current can be supplied to the light-emitting element 104a. It is possible to prevent it from flowing.

[0195] In addition, in the semiconductor device according to one aspect of the present invention, in the second operation, transistor 101 The gate is kept at potential Vi2. Due to the above operation, transistor 101 is normally on. However, even if the threshold voltage Vth has a negative value, transistor 101 In this state, the capacitance element 102 accumulates until the source potential becomes higher than the gate potential Vi2. It can release the charge that has been discharged. Therefore, in a semiconductor device according to one aspect of the present invention, Even if transistor 101 is normally on, in the fourth operation described above, The gate-source distance of transistor 101 is adjusted so that the value includes the threshold voltage Vth of transistor 101. The voltage (Vgs101) can be set.

[0196] Note that the capacitance value of the capacitive element 103 is the capacitance value of the parasitic capacitance of the load 104 (light-emitting element 104a). It is preferable that it be smaller than, preferably 1 / 2 times or less, and more preferably 1 / 5 times or less. This is preferable. Alternatively, the area of ​​the electrode of the capacitive element 103 is such that the load 104 (light-emitting element 104a It is desirable that the area of ​​the electrode is smaller than the area of ​​the electrode, preferably 1 / 2 times or less, and more preferably A ratio of 1 / 5 or less is preferable. However, one embodiment of the present invention is not limited to these. stomach.

[0197] Furthermore, the capacitance value of the capacitive element 102 is less than the capacitance value of the parasitic capacitance of the gate of transistor 101. It is desirable for it to be large, preferably more than twice as large, and more preferably more than five times as large. Alternatively, the area of ​​the electrodes of the capacitive element 102 is larger than the area of ​​the channel of the transistor 101. Larger is desirable, preferably more than twice as large, and more preferably more than five times as large. Alternatively, the area of ​​the electrodes of the capacitive element 102 is larger than the area of ​​the electrode of the transistor 101. It is desirable that it be high, preferably more than twice as high, and more preferably more than five times as high. As a result, a potential Vsig is input, and the capacitance element 102 and the gate capacitance of the transistor... When the voltage is divided by capacitance, the decrease in the voltage across the capacitive element 102 can be reduced. However, the embodiments of the present invention are not limited thereto.

[0198] Furthermore, the capacitance value of capacitive element 102 is approximately the same as that of capacitive element 103. Or, preferably, a larger value. The capacitance value of capacitive element 102 is the same as that of capacitive element 103. Preferably, the difference between the volume value and the actual volume value is ±20% or less, and more preferably ±10% or less. Yes. Or, the area of ​​the electrodes of capacitive element 102 is about the same as the area of ​​the electrodes of capacitive element 103. It is desirable that the size be a certain degree or larger. Therefore, the same layout Within the area, optimal operation can be performed. However, one embodiment of the present invention is This is not limited to this.

[0199] Furthermore, schematic diagrams of circuit 100 during periods T11 to T14 are shown in Figures 19(A) to Figure 19(A) These are shown in 19(D), respectively. A semiconductor device according to one aspect of the present invention has a circuit 100 which is described above It is sufficient if the structure shown in Figures 19(A) to 19(D) is adopted during each period. According to one aspect of the present invention, a semiconductor device has the circuit configuration shown in Figures 11 to 16. It is not limited to 100. A semiconductor device according to one aspect of the present invention has a circuit 100. The arrangement and number of switches can be arranged so that the structure shown in Figures 19(A) to 19(D) can be adopted. Furthermore, the number of wires supplying various potentials can be changed as needed.

[0200] Furthermore, after the period T13 in which the third operation described above is performed, the period T14 in which the fourth operation described above is performed Before that, a period T16 may be provided during which the sixth operation is performed.

[0201] In the circuit 100 shown in Figure 11(C), when a period T16 is provided, switch 11, The operation of switch 12, switch 13, and switch 14, the potential of wiring 21, and the transistor Here is an example of a timing chart showing the gate-source voltage (Vgs101) of TA101. This is illustrated in Figure 20(A).

[0202] The timing chart shown in Figure 20(A) shows that between period T13 and period T14, period T16 This differs from the timing chart shown in Figure 17(A) in that it includes [a specific feature / feature].

[0203] The sixth operation, which takes place during period T16, will be described. During period T16, Figure 20(A As shown in the image, switch 12 is in a conductive state, switch 11, switch 13, and switch 14 is in a non-conductive state. Therefore, during period T16, as shown in Figure 20(B), The gate-source voltage (Vgs101) of Zistor 101 is given by: Vsig + Vth - Vi1 -Vα

[0204] In the sixth operation, the potential Vα is such that the anode of the light-emitting element 104a is electrically floating. This is the potential that fluctuates when the transistor is in the "off" state. The potential Vα is when transistor 101 is off. Therefore, the capacitance value of the light-emitting element 104a and the capacitance of the capacitive elements 102 and 103 The value is determined according to the ratio of the values. However, depending on the height of the potential Vsig, the transient Since transistor 101 is turned on, power is supplied to the anode of light-emitting element 104a via transistor 101. Load flows in. Therefore, the potential Vα is not determined solely by the ratio of capacitances mentioned above, The value also changes depending on the charge flowing into the anode of the optical element 104a.

[0205] The above charge quantity Q is expected to have the effect of suppressing variations in mobility. The reason for this is explained below. I will explain.

[0206] The amount of charge Q flows from the drain to the source of transistor 101 during period T16. This corresponds to the amount of electric charge. Therefore, the amount of charge Q increases as the mobility of transistor 101 increases. It becomes larger. And when the charge amount Q becomes larger, the trajectory during light emission of the light-emitting element 104a The gate-source voltage (Vgs101) of the charger 101 decreases. The greater the mobility of transistor 101, the more energy is supplied to light-emitting element 104a, depending on the quantity Q. A correction is applied to reduce the current value, and the smaller the mobility of transistor 101, the lower the current value. However, a correction is applied to ensure that the current value supplied to the light-emitting element 104a does not become too small. Therefore, the variation in mobility can be suppressed by the amount of charge Q.

[0207] After period T16, in period T14, the gate-source voltage (Vgs1) of transistor 101 was 01) is the voltage Vsig + Vth - Vi1 - Vα. Therefore, the threshold of transistor 101 The gate-source voltage can be set to a value that takes into account the voltage Vth and mobility.

[0208] Furthermore, a semiconductor device according to one aspect of the present invention, similar to Figure 8, has the same circuit as shown in Figure 11(B) In 00, there may be an additional capacitive element 105 connected to the load 104. As such, in the circuit 100 shown in Figure 11(C), The device may further have a capacitive element 105 connected to the light-emitting element 104a. Similarly, A semiconductor device according to one aspect of the invention, in the circuit 100 shown in Figure 11(D), has a light-emitting element. It may also have a capacitive element 105 connected to 104b.

[0209] The semiconductor device shown in Figure 21(A) is configured in the circuit 100 shown in Figure 11(B) with a load of 10 It further has a capacitive element 105 connected to 4. Specifically, one of the capacitive elements 105 One electrode is connected to the other electrode of the capacitive element 103, and to the source or drain of the transistor 101. One side of the input is connected. The other electrode of the capacitive element 105 is connected to the wiring 26. In addition, Figure 21(A) shows an example where circuit 100 has a load 104. However, in Figure 21(A), instead of the load 104, the light-emitting element 104a or light-emitting element Child 104b may also be used.

[0210] Furthermore, wiring 26 can be connected to various other wirings. For example, wiring 22, wiring 23, wiring 24, wiring 25, or wiring, scan lines, gate lines, transistors of another circuit 100 It can be connected to the gate of the ZISTA and the wiring connected to it. This allows for the number of wires It can be reduced.

[0211] The semiconductor device shown in Figure 21(B) has wiring 26 in the circuit 100 shown in Figure 21(A). An example of connecting to wiring 24 is shown. Note that in Figure 21(B), circuit 100 is load 1 Although the case with 04 is shown as an example, in Figure 21(B), instead of load 104 A light-emitting element 104a or light-emitting element 104b may also be used. Connect in this manner. This reduces the number of wires (26).

[0212] The semiconductor device shown in Figure 21(C) has wiring 26 in the circuit 100 shown in Figure 21(A). An example of connecting to wiring 23 is shown. Note that in Figure 21(C), circuit 100 is load 1 Although the case with 04 is shown as an example, in Figure 21(C), instead of load 104 A light-emitting element 104a or light-emitting element 104b may also be used. Connect in this manner. This reduces the number of wires (26).

[0213] The semiconductor device shown in Figure 21(D) has wiring 26 in the circuit 100 shown in Figure 21(A). An example of connecting to wiring 22 is shown. Note that in Figure 21(D), circuit 100 is load 1 Although the case with 04 is shown as an example, in Figure 21(D), instead of load 104 A light-emitting element 104a or light-emitting element 104b may also be used. Connect in this manner. This reduces the number of wires (26).

[0214] The semiconductor device shown in Figure 21(E) has wiring 26 in the circuit 100 shown in Figure 21(A). An example of connecting to wiring 25 is shown. Note that in Figure 21(E), circuit 100 is load 1 The case with 04 is shown as an example, but in Figure 21(E), instead of load 104 A light-emitting element 104a or light-emitting element 104b may also be used. Connect in this manner. This reduces the number of wires (26).

[0215] Capacitive element 1 is connected in parallel to the load 104 and the light-emitting element 104a or light-emitting element 104b. By adding 05 to the circuit 100, the sixth operation and the fourth operation described in the above embodiment can be performed. During operation, the charge fluctuation at either the source or drain of transistor 101 Because it can be suppressed, the voltage Vα can be reduced. Therefore, between gate and source It is possible to bring the voltage Vgs closer to the ideal value, i.e., the voltage Vsig + Vth - Vi1. The current supplied to the load 104, the light-emitting element 104a or the light-emitting element 104b is controlled by the voltage Vsi This allows us to get closer to a value that accurately reflects g.

[0216] Alternatively, by appropriately adjusting the capacitance value of the capacitive element 105, the amount of charge during period T16 can be determined. The amount of change in potential due to Q can be adjusted. This reduces the variation in mobility. This allows for more appropriate execution.

[0217] Furthermore, the electrode area of ​​the capacitive element 105 is greater than the electrode area of ​​the load 104 (light-emitting element 104a). It is desirable for the difference to be small, preferably 1 / 2 times or less, and more preferably 1 / 3 times or less. It is suitable. Alternatively, the capacitance value of the capacitive element 105 is the capacitance of the load 104 (light-emitting element 104a). It is desirable for the value to be smaller than the given value, preferably 1 / 2 times or less, and more preferably 1 / 3 times or less. This is preferable. This allows for optimal operation within the same layout area. It will come. However, one embodiment of the present invention is not limited thereto.

[0218] Furthermore, the area of ​​the electrodes of the capacitive element 105 and the area of ​​the electrodes of the load 104 (light-emitting element 104a) The total area should preferably be larger than the electrode area of ​​the capacitive element 103, preferably more than twice as large. More preferably, it is preferable that it be 5 times or more. Alternatively, the capacitance value of the capacitive element 105 and the load 10 The sum of the capacitance values ​​of 4 (light-emitting element 104a) is greater than the capacitance value of the capacitive element 103. Preferably, more preferably, it should be 2 times or more, and more preferably, 5 times or more. The voltage between the capacitive element 103, the capacitive element 105, and the load 104 (light-emitting element 104a) is When the voltage is divided, it is possible to apply a larger voltage to the capacitive element 103. However, the embodiments of the present invention are not limited thereto.

[0219] Note that the electrode area of ​​the capacitive element 105 is the surface area of ​​the electrode of the capacitive element 102 or the capacitive element 103. It is desirable that the product be smaller than the product, preferably 1 / 2 times or less, and more preferably 1 / 3 times or less. This is preferable. Alternatively, the capacitance value of the capacitive element 105 is the capacitance value of the capacitive element 102 or the capacitance element 10 It is desirable that the capacity value be smaller than 3, preferably 1 / 2 times or less, and more preferably 1 / A ratio of 3 times or less is preferable. This allows for optimal operation within the same layout area. This is possible. However, one embodiment of the present invention is not limited thereto.

[0220] Furthermore, wiring 25 can be connected to various other wirings. For example, wiring 22, wiring 24, wiring 26, or wiring of another circuit 100, scan lines, gate lines, transistor gates It can be connected to wiring connected to the jack, etc. This reduces the number of wires. It is possible.

[0221] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 21(A) to 21(D). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0222] The semiconductor device shown in Figures 22(A) to 22(D) is the same as the one shown in Figures 21(A) to 21(D). In addition to circuit 100, there is circuit 220 which has the function of supplying a constant voltage or signal to wiring 21. The circuit 221 has the function of supplying a constant voltage or signal to the wiring 22, and the circuit 221 has the function of supplying a constant voltage to the wiring 23. Circuit 222 has the function of supplying signals, and wiring 24 has the function of supplying a constant voltage or signal. Circuit 223 having a function to supply a constant voltage or signal to wiring 25, and Circuit 224 having a function to supply a constant voltage or signal to wiring 25 Each of these has. Furthermore, the circuit 100 shown in Figure 22(A) has a constant voltage applied to the wiring 26 and It has a circuit 225 that has the function of supplying signals.

[0223] Also, any of the circuits in Figures 11(B) to 11(D) or Figures 21(B) to 21(D) 100 may be used as the pixel of the display device. And each of the multiple hues corresponds to When pixels are provided in a display device, the transients of the pixels are determined by the corresponding hue. The ratio of channel width to channel length of TA101 may be different. Similarly, the pixels have The capacitance value of the capacitance element 105 may also differ depending on the corresponding hue.

[0224] Figure 23(A) shows the case where the circuit 100 shown in Figure 11(B) is used as a pixel of the display device. This is shown as an example. In Figure 23(A), circuit 100(R) corresponds to the red (R) color. It corresponds to the element, and circuit 100(G) corresponds to the pixel corresponding to green (G), and circuit 100(B) is This corresponds to the pixel corresponding to blue (B). In one aspect of the present invention, the circuit 100(R) has The transistor 101(R) and the transistor 101(G) of the circuit 100(G) and the rotation In at least one of the transistors 101(B) that the path 100(B) has, The ratio of channel width to channel length may differ from others. With the above configuration, circuit 100(R ) has load 104(R), circuit 100(G) has load 104(G), circuit 100 Set the current supplied to each of the loads 104(B) of (B) to different values. It is possible.

[0225] Furthermore, Figure 23(B) shows the circuit 100 shown in Figure 21(A) used as a pixel of the display device. This is shown as an example. In the case of Figure 23(B), the same applies as in Figure 23(A), circuit 10 The transistor 101(R) in 0(R) and the transistor in circuit 100(G) 101(G) and at least one transistor 101(B) in circuit 100(B) However, the ratio of channel width to channel length may differ from others. With the above configuration, Load 104(R) on path 100(R), load 104(G) on circuit 100(G) The current supplied to each of the loads 104(B) of the circuit 100(B) is set to different values. It can be configured.

[0226] Furthermore, in the case of Figure 23(B), the capacitive element 105(R) of circuit 100(R) and circuit 1 Capacitive element 105(G) of 00(G) and capacitive element 105 of circuit 100(B) In at least one of (B), the capacity value may differ from the others.

[0227] Note that in Figures 23(A) and 23(B), circuit 100(R) has load 104(R). Circuit 100(G) has a load 104(G), and circuit 100(B) has a load 104(B) The example shown is one case where the load is present, but in Figure 23(A) or Figure 23(B), Instead of 104(R), load 104(G), or load 104(B), use the corresponding color for each hue. A light-emitting element 104a or light-emitting element 104b may also be used.

[0228] Furthermore, in Figure 23(B), the circuit 100 shown in Figure 21(A) is used as a pixel of the display device. This is shown as an example, but the circuit 100 shown in Figures 21(B) to 21(E) These may also be used as pixels in a display device.

[0229] In this embodiment, variations in the threshold voltage of transistor 101 are corrected. Although such actions were performed, the embodiments of the present invention are not limited thereto. For example, Without performing any operation to compensate for variations in threshold voltage, current is supplied to the load 104. It is also possible to operate it in a separate manner.

[0230] This embodiment describes an example of the basic principle. Therefore, this embodiment You may freely combine some or all of this with some or all of other embodiments. It can be applied or replaced and implemented.

[0231] (Embodiment 2) In this embodiment, an example of the configuration of circuit 100, which is a semiconductor device according to one aspect of the present invention, is described below. Let me explain. In this embodiment, a switch is added to the circuit shown in Embodiment 1. This section describes the configuration and cases where some of the driving methods have been changed. Therefore, the embodiments The points mentioned in section 1 can also be applied to this embodiment.

[0232] Figures 24(A) to 24(D) show examples of the configuration of circuit 100. The circuit 100 shown in Figure 24(D) is a combination of the circuit 100 shown in Figures 1(A) to 1(D). These correspond to the configuration with the addition of switch 914. And the above switch 914 is Controls the conductivity between the source or drain of the transistor 101 and the wiring 23. It has the function of controlling the conductivity between wiring 23 and wiring 24. Alternatively, the switch 914 has a function to prevent current from flowing through the capacitive element 103. Alternatively, the switch 914 has the function of preventing current from flowing through the capacitive element 102. Alternatively, switch 914 has the function of preventing current from flowing to load 104.

[0233] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 24(A) to 24(D). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0234] The semiconductor device shown in Figures 25(A) to 25(D) is the same as the one shown in Figures 24(A) to 24(D). In addition to circuit 100, there is circuit 201 which has the function of supplying a constant voltage or signal to wiring 21. , a circuit 202 which has the function of supplying a constant voltage or signal to wiring 22, and a circuit 202 which has the function of supplying a constant voltage to wiring 23 Circuit 203 has the function of supplying signals, and wiring 24 has the function of supplying a constant voltage or signal. Each has a circuit 204 which has the following:

[0235] Note that the circuit 100 shown in Figures 24 and 25 consists of switch 11, switch 12, and switch 1 3. A transistor can be used in switch 914.

[0236] For example, as shown in Figure 86, if the switch 914 is a transistor 914t... In addition, the gate of transistor 914t is connected to wiring 932, and wiring 93 Circuit 2 can be connected to circuit 9206, which has the function of supplying a constant voltage or signal. Examples of the 9206 circuit include gate drivers (scan line driving circuits). .

[0237] Furthermore, in wiring 31 to 33 and wiring 932, at least two of the wirings are It is possible to connect them to each other. Alternatively, fewer than the number of wires 31 to 33 and wire 932 At least one wire is connected to at least one of the wires 31 to 33 and 932 of another circuit 100. It is possible to connect them.

[0238] The circuit 100 shown in Figures 24 and 25 performs the same operation as the circuit 100 shown in Figures 1 and 2. It is possible to do so. However, as an example, in the circuit 100 shown in Figures 24 and 25, Figure 5 During periods T11 to T13 and T15 shown in Figure 6, switch 914 is guided It is preferable that the switch 914 is in a non-conductive state during period T14. As a result, during period T14, the light-emitting element 104a is transmitted via transistor 101. This prevents electric charge from leaking in such places. However, one embodiment of the present invention is This is not limited to this.

[0239] Alternatively, during period T13, switch 914 can be kept in a non-conductive state. As a result, no current flows through transistor 101, so the gate and socket of transistor 101 are not affected. This makes it easier to control the potential at each node within circuit 100, such as the -.

[0240] Alternatively, during period T11, switch 914 can be kept in a non-conductive state. As a result, no current flows through transistor 101, so the gate and socket of transistor 101 are not affected. This makes it easier to control the potential at each node within circuit 100, such as the -.

[0241] Alternatively, the switch 914 may be kept in a non-conductive state for a portion of the period T15. This prevents current from flowing to the light-emitting element 104a, etc., thereby providing a non-light-emitting period. Yes, it's possible.

[0242] Note that the circuit 100 shown in Figures 24(B) and 25(B) is the same as that shown in Figures 8, 9, and 10(B). Similarly, it may further have a capacitive element 105 connected to the load 104. The circuit 100 shown in Figures 24(C) and 25(C) is connected to the light-emitting element 104a and a capacitor. Element 105 may also be further present. Similarly, as shown in Figures 24(D) and 25(D) The circuit 100 may further include a capacitive element 105 connected to the light-emitting element 104b. Specifically, one electrode of the capacitive element 105 is connected to the other electrode of the capacitive element 103, and the trap It is connected to either the source or drain of the converter 101. The other side of the capacitive element 105 The electrodes are connected to separately provided wiring 26, wiring 24, wiring 23, or wiring 22.

[0243] Furthermore, the circuit 100 shown in Figures 24(B) to 24(D), and Figures 25(B) to 25 Either of the circuits obtained by adding the above-mentioned capacitive element 105 to the circuit 100 shown in (D) is used as a display device. It may also be used as a pixel. And, pixels corresponding to multiple hues are set on the display device. If selected, the channel of the transistor 101 in the pixel depends on the corresponding hue. The ratio of channel width to channel length may differ.

[0244] It is also possible to install switch 914 in a location other than those shown in Figures 24 and 25. Specifically, as an example, it is possible to control the conductivity between wire 23 and wire 24. It can be installed in a location where it is possible. For example, in Figures 26(A) to 26(D), Circuit 1 Examples of the configuration of 00 are shown below. The circuit 100 shown in Figures 26(A) to 26(D) is shown in Figure 1 (A) to Figure 1(D) shows a configuration in which a switch 914 is added to the circuit 100, It corresponds to the source or drain of transistor 101. It has the function of controlling the conductivity between one electrode and the other electrode of the capacitive element 103. If switch 13 is in a conductive state, then switch 914 is connected to transistor 101 One of the source or drain of the capacitor, one electrode of the capacitor element 102, and one of the electrodes of the capacitor element 103. It has the function of controlling the conductivity state between the electrodes.

[0245] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 26(A) to 26(D). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is further It is acceptable to have it.

[0246] The semiconductor device shown in Figures 27(A) to 27(D) is shown in Figures 26(A) to 26(D). In addition to circuit 100, there is circuit 201 which has the function of supplying a constant voltage or signal to wiring 21. , a circuit 202 which has the function of supplying a constant voltage or signal to wiring 22, and a circuit 202 which has the function of supplying a constant voltage to wiring 23 Circuit 203 has the function of supplying signals, and wiring 24 has the function of supplying a constant voltage or signal. Each has a circuit 204 which has the following:

[0247] Note that the circuit 100 shown in Figures 26 and 27 consists of switch 11, switch 12, and switch 1 3. A transistor can be used in switch 914.

[0248] The circuit 100 shown in Figures 26 and 27 is the same as the circuit shown in Figures 1, 2, 24, or 25. It can perform the same operations as 100.

[0249] Note that the circuit 100 shown in Figures 26(B) and 27(B) is the same as that shown in Figures 8, 9, and 10(B). Similarly, it may further have a capacitive element 105 connected to the load 104. The circuit 100 shown in Figures 26(C) and 27(C) is connected to a capacitor with a light-emitting element 104a. Element 105 may be further included. Similarly, as shown in Figures 26(D) and 27(D) The circuit 100 may further include a capacitive element 105 connected to the light-emitting element 104b. Specifically, one electrode of the capacitive element 105 is connected to the other electrode of the capacitive element 103. Furthermore, the switch 914 connects one electrode of the capacitive element 105 to the transistor 101 Controls the conductivity between the source or drain of the capacitive element 105. The pole is connected to separately provided wiring 26, wiring 24, wiring 23, or wiring 22.

[0250] Furthermore, the circuit 100 shown in Figures 26(B) to 26(D), and Figures 27(B) to 27 Either of the circuits obtained by adding the above-mentioned capacitive element 105 to the circuit 100 shown in (D) is used as a display device. It may also be used as a pixel. And, pixels corresponding to multiple hues are set on the display device. If selected, the channel of the transistor 101 in the pixel depends on the corresponding hue. The ratio of channel width to channel length may differ.

[0251] In addition, switch 914 can be installed in a location other than those shown in Figures 24, 25, 26, and 27. It is possible. For example, Figures 28(A) to 28(D) show examples of the configuration of circuit 100, respectively. The circuit 100 shown in Figures 28(A) to 28(D) is shown in Figures 1(A) to 1(D). These correspond to the configuration in which switch 914 is added to the circuit 100 shown. Switch 914 connects either the source or drain of transistor 101 to capacitive element 10 It has the function of controlling the conductivity state between the other electrode of 3. Furthermore, switch 13 conducts If this condition is met, the above switch 914 will connect one electrode of the capacitive element 102 and the capacitive element 1 It has the function of controlling the conductivity between one electrode of 03 and the other electrode of the capacitive element 103. do.

[0252] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 28(A) to 28(D). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0253] The semiconductor device shown in Figures 29(A) to 29(D) is the same as the one shown in Figures 28(A) to 28(D). In addition to circuit 100, there is circuit 201 which has the function of supplying a constant voltage or signal to wiring 21. , a circuit 202 which has the function of supplying a constant voltage or signal to wiring 22, and a circuit 202 which has the function of supplying a constant voltage to wiring 23 Circuit 203 has the function of supplying signals, and wiring 24 has the function of supplying a constant voltage or signal. Each has a circuit 204 which has the following:

[0254] Note that the circuit 100 shown in Figures 28 and 29 consists of switch 11, switch 12, and switch 1 3. A transistor can be used in switch 914.

[0255] The circuit 100 shown in Figures 28 and 29 is shown in Figures 1, 2, 24, 25, 26, and 27. The same operation as shown in circuit 100 can be performed. However, as an example, Figures 28 and 28 In the circuit 100 shown in 29, periods T11 to T13 and period T1 are shown in Figures 5 and 6. In step 5, switch 914 is in a conductive state, and in period T14, switch 914 is in a non-conductive state. It is preferable that the transistor 1 is in a conductive state. Therefore, during period T14, It is possible to prevent charge leakage to the light-emitting element 104a, etc., via 01. However, However, the embodiments of the present invention are not limited thereto.

[0256] Alternatively, during period T11, switch 914 can be kept in a non-conductive state. As a result, no current flows through transistor 101, making it easier to control the potential.

[0257] Alternatively, the switch 914 may be kept in a non-conductive state for a portion of the period T15. This prevents current from flowing to the light-emitting element 104a, etc., thereby providing a non-light-emitting period. Yes, it's possible.

[0258] Furthermore, during period T12, it is also possible to keep switch 914 in a non-conductive state. In T12, by setting switch 914 to a non-conductive state, the light-emitting element in period T12 The anode of child 104a can be kept at potential Vi1. Therefore, without setting a period T13 That is, without performing the third action, after the second action in period T12 is completed, period T The fourth action in 14 can be performed.

[0259] Note that the circuit 100 shown in Figures 28(B) and 29(B) is the same as the circuit shown in Figures 8, 9, and 10(B). Similarly, it may further have a capacitive element 105 connected to the load 104. The circuit 100 shown in Figures 28(C) and 29(C) is connected to the light-emitting element 104a. Capacitive elements 105 may be further included. Similarly, as shown in Figures 28(D) and 29(D) The circuit 100 shown further includes a capacitive element 105 connected to the light-emitting element 104b. This is also good. Specifically, one electrode of the capacitive element 105 is connected to the other electrode of the capacitive element 103. Furthermore, the switch 914 connects one electrode of the capacitive element 105 to the transistor 1 Controls the conduction state between either the source or drain of 01. The other side of the capacitive element 105. The electrodes are connected to separately provided wiring 26, wiring 24, wiring 23, or wiring 22. .

[0260] Furthermore, the circuit 100 shown in Figures 28(B) to 28(D), and Figures 29(B) to 29 Either of the circuits obtained by adding the above-mentioned capacitive element 105 to the circuit 100 shown in (D) is used as a display device. It may also be used as a pixel. And, pixels corresponding to multiple hues are set on the display device. If selected, the channel of the transistor 101 in the pixel depends on the corresponding hue. The ratio of channel width to channel length may differ.

[0261] It is also possible to install switch 914 in a location other than those shown in Figures 24 to 29. For example, Figures 30(A) to 30(D) show examples of the configuration of circuit 100. The circuit 100 shown in Figures A to 30(D) is the same as the circuit 10 shown in Figures 1(A) to 1(D). These correspond to the configuration in which switch 914 is added to 0. And in Figure 30(A) The above switch 914 controls either the source or drain of transistor 101 and the capacitance element It has the function of controlling the conductivity between the other electrode of sub-electrode 103 and the wiring 24. (Figure 30) In B), the switch 914 controls either the source or the drain of the transistor 101. It also has the function of controlling the conductivity between the other electrode of the capacitive element 103 and the load 104. In Figure 30(C), the switch 914 controls the source or source of transistor 101. Between one electrode of the rain and the other electrode of the capacitive element 103 and the anode of the light-emitting element 104a It has a function to control the conduction state. In Figure 30(D), the switch 914 is a transistor The source or drain electrode of the zista 101 and the other electrode of the capacitive element 103, and the light-emitting element It has the function of controlling the conductivity state between child 104b and the cathode.

[0262] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagrams in Figures 30(A) to 30(D). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0263] The semiconductor device shown in Figures 31(A) to 31(D) is shown in Figures 30(A) to 30(D). In addition to circuit 100, there is circuit 201 which has the function of supplying a constant voltage or signal to wiring 21. , a circuit 202 which has the function of supplying a constant voltage or signal to wiring 22, and a circuit 202 which has the function of supplying a constant voltage to wiring 23 Circuit 203 has the function of supplying signals, and wiring 24 has the function of supplying a constant voltage or signal. Each has a circuit 204 which has the following:

[0264] Note that the circuit 100 shown in Figures 30 and 31 consists of switch 11, switch 12, and switch 1 3. A transistor can be used in switch 914.

[0265] The circuit 100 shown in Figures 30 and 31 is the same as in Figures 1, 2, 24, 25, 26, and 27. It can perform the same operation as the circuit 100 shown in Figures 28 and 29. However, this is just an example. In the circuit 100 shown in Figures 30 and 31, the periods T11 and T shown in Figures 5 and 6 are... During periods 13 through T15, switch 914 is in a conductive state, and during period T12, It is preferable that switch 914 is in a non-conductive state. However, in one embodiment of the present invention This is not limited to the above. As a result, during period T12, the switch 914 is made non-conductive. By doing so, the anode of the light-emitting element 104a is kept at potential Vi1 during period T12. Therefore, without setting a period T13, that is, without performing the third operation, period T1 After the second operation in step 2 is completed, the fourth operation in period T14 can be performed. However, the embodiments of the present invention are not limited thereto.

[0266] Alternatively, during period T11, switch 914 can be kept in a non-conductive state. As a result, no current flows through the light-emitting element 104a, etc., so the potential Vi2 of the wiring 22 is high. A value is also acceptable.

[0267] Alternatively, during period T12, switch 914 can be kept in a non-conductive state. As a result, no current flows through the light-emitting element 104a, etc., so the potential Vi2 of the wiring 22 is high. A value is also acceptable.

[0268] Alternatively, the switch 914 may be kept in a non-conductive state for a portion of the period T15. This prevents current from flowing to the light-emitting element 104a, etc., thereby providing a non-light-emitting period. Yes, it's possible.

[0269] Note that the circuit 100 shown in Figures 30(B) and 31(B) is the same as in Figures 8, 9, and 10(B). Similar to Figures 21 and 22, a capacitive element 105 connected to the load 104 is further provided. It may be there. Similarly, the circuit 100 shown in Figures 30(C) and 31(C) is a light-emitting element 10 A capacitive element 105 connected to 4a may also be further included. Similarly, Figure 30(D) and The circuit 100 shown in Figure 31(D) has a capacitive element 105 connected to the light-emitting element 104b, It may also have more. Specifically, one electrode of the capacitive element 105 is of the capacitive element 103. It is connected to the other electrode and to either the source or drain of transistor 101. The other electrode of the measuring element 105 is connected to separately provided wiring 26, wiring 24, wiring 23, or It is connected to line 22.

[0270] Furthermore, the circuit 100 shown in Figures 30(B) to 30(D), and Figures 31(B) to 31 Either of the circuits obtained by adding the above-mentioned capacitive element 105 to the circuit 100 shown in (D) is used as a display device. It may also be used as a pixel. And, pixels corresponding to multiple hues are set on the display device. If selected, the channel of the transistor 101 in the pixel depends on the corresponding hue. The ratio of channel width to channel length may differ.

[0271] In addition, in Figures 24 to 31, a switch 914 is added to the circuit shown in Figure 1, etc. Although the above configuration has been described, circuits that add switch 914 are not limited to those shown in Figure 1, etc. It cannot be done. In the circuits shown in the other drawings besides Figure 1, the switch is the same as in Figures 24 to 31. A configuration can be used that adds component 914. For example, as shown in the circuit in Figure 11, the switch In the configuration in which Chi 14 is added, switch 914 is added in the same manner as in Figures 24 to 31. A circuit can be constructed. An example of this is shown in Figure 87.

[0272] Next, regarding the circuits shown in Figures 1 and 11, the driving method shown in Figures 5 and 17 is different. An example of using a different drive method is shown. Note that when using such a drive method... It is preferable to connect the wiring 23 between pixels in the row direction rather than between pixels in the column direction. Therefore, Figures 34(A) to 34(D) show the circuit 10 shown in Figures 1(A) to 1(D). Examples of the arrangement of 0 are shown below. In Figures 34(A) to 34(D), different wiring 21 are shown. As an example, we show a case where multiple circuits 100 connected to a common wiring 23 are connected to the same wiring. In other words, wiring 23 is provided intersecting with wiring 21.

[0273] An example of the operation of one embodiment of the semiconductor device of the present invention, using the circuit 100 shown in Figure 34(C) as an example. This will be explained. In this operation, the first operation in Figure 5(B) and Figure 17(B) Then, the voltage Vi2-Vi1 is supplied to the capacitive element 102, and the gate saw of transistor 101 When the voltage between the switches (Vgs101) becomes the voltage Vi2-Vi1, the wiring 21 and switch 14 The potential Vi1 is supplied not through the wire 23, but through the wiring 23. The contents described in Figures 5 and 17 can be applied to one embodiment of the semiconductor device of the present invention. That is the case.

[0274] The operation of circuit 100 shown in Figure 34(C) mainly consists of the first operation, the second operation, the third operation, and the It can be divided into four actions and a fifth action. However, it is not limited to this, and new actions may be added. It is also possible to add or remove some functions.

[0275] First, let's explain the first operation that takes place during period T11. During period T11, Figure 3 As shown in 5(A), switch 11 is in a non-conductive state, and switches 12 and 13 are in a conductive state. The circuit is open. Also, potential Vi1 is supplied to wiring 23. Therefore, during period T11, The anode of the light-emitting element 104a is at potential Vi1, and the gate-source of transistor 101 The voltage (Vgs101) is equal to the voltage Vi2 - Vi1. That is, transistor 101, and This means that the capacitive element 102 is being initialized.

[0276] The second operation that takes place during period T12 will be described. During period T12, Figure 35(B As shown in the diagram, switch 11 is in a non-conductive state, and switches 12 and 13 are in a conductive state. Furthermore, a potential VDD is supplied to wiring 23. As a result, the charge stored in the capacitive element 102 is released through the transistor 101. The potential of the source of transistor 101 rises. Then, transistor 101 turns off. In this state, the discharge of charge from the capacitive element 102 stops. Ultimately, transistor 10 A threshold voltage Vth of 1 is held in the capacitive element 102. Therefore, during period T12, the capacitive element The threshold voltage Vth is maintained at 102, and the anode of the light-emitting element 104a is at potential Vi2-Vth Therefore, the gate-source voltage (Vgs101) of transistor 101 is equal to the threshold voltage Vth This means that the threshold voltage Vth of transistor 101 can be obtained.

[0277] Thus, the first and second operations can be performed without using wiring 21, And the duration of the second operation can be extended. Therefore, more precisely, Since the threshold voltage of the ZISTA 101 can be obtained, a clean table with less display unevenness can be produced. It is possible to perform a demonstration.

[0278] The third operation performed during period T13 will be described. During period T13, Figure 35(C As shown in the diagram, switches 11 and 13 are in a conductive state, and switch 12 is in a non-conductive state. The wiring 23 only needs to be supplied with any potential, for example, the potential VDD or Potential Vi1 is supplied. Additionally, potential Vi3 is supplied to wiring 21. Potential Vi3 is, It can be at the same height as potential Vcat, or at the same height as potential Vi2, or at the same height as potential Vi1. The same height is also acceptable. Therefore, during period T13, the threshold voltage Vth is maintained in the capacitive element 102. The anode of the light-emitting element 104a is at potential Vi3, and the gate of transistor 101 is at potential Vi3. The potential becomes Vi3 + Vth, and the gate-source voltage of transistor 101 (Vgs101) ) becomes the threshold voltage Vth.

[0279] The fourth operation, which takes place during period T14, will be described. During period T14, Figure 35(D As shown in the diagram, switch 11 is in a conductive state, and switches 12 and 13 are in a non-conductive state. This is the result. Also, potential Vsig is supplied to wiring 21. Therefore, during period T14, the capacitance The threshold voltage Vth is held in element 102, and the voltage Vsig-Vi3-Vα is applied to the capacitive element 103. This is maintained, and the anode of the light-emitting element 104a becomes potential Vi3+Vα, and transistor 10 The gate potential of transistor 1 is Vsig + Vth, and the gate-source distance of transistor 101 is The voltage (Vgs101) is Vsig + Vth - Vi3 - Vα.

[0280] The fifth operation, which takes place during period T15, will be described. During period T15, as shown in Figure 36, Therefore, switches 11, 12, and 13 are in a non-conductive state. During period T15, the threshold voltage Vth is maintained in the capacitive element 102, and the voltage V is maintained in the capacitive element 103. sig-Vi3-Vα is maintained, and the anode of the light-emitting element 104a becomes potential Vel. The gate potential of transistor 101 is Vsig + Vth - Vi3 - Vα + Vel. The gate-source voltage (Vgs101) of transistor 101 is the voltage Vsig + Vth- Vi3-Vα. Therefore, a current of a magnitude corresponding to the potential Vsig is applied to the light-emitting element 104. It is possible to flow through a and cause the light-emitting element 104a to emit light with a brightness corresponding to the potential Vsig. can.

[0281] The potential Vel is determined when current is passed through the transistor 101 to the light-emitting element 104a. This is the resulting potential. Specifically, it is the potential between potential VDD and potential Vcat.

[0282] In the fifth operation described above, the gate-source voltage (Vgs101) of transistor 101 is controlled by the electric current. Let the voltage Vsig + Vth - Vi3 - Vα, and take into account the threshold voltage Vth of transistor 101. It can be set to a value. Therefore, with the above configuration, the threshold voltage of transistor 101 This prevents variations in Vth from affecting the current value supplied to the light-emitting element 104a. Yes, it is possible. Alternatively, even if transistor 101 degrades and the threshold voltage Vth changes, the above changes This prevents the current supplied to the light-emitting element 104a from being affected. Therefore, It can reduce display inconsistencies and provide high-quality displays.

[0283] Furthermore, even during a portion of period T15, by controlling the potential of wiring 23, light emission can be controlled. By preventing current from flowing through elements such as element 104a, a non-emitting period can be created. For example If the potential of wiring 23 is equal to the potential of wiring 24, then current should not flow. It is possible.

[0284] Note that while Figures 34 and 35 do not show the switch 14, the diagram is not limited to these figures. A switch 14 can be provided, similar to Figures 11 to 23.

[0285] Note that while Figures 34 and 35 do not show the switch 914, the design is not limited to these figures. As in Figures 24 to 87, a switch 914 can be provided.

[0286] Note that in Figures 34 and 35, the operation was performed by changing the potential of wiring 23, but multiple wirings can be used. It is also possible to control the electric potential. An example of this is shown below. Therefore, Figure 34, Figure The contents described in Figures 35, 5, and 17 can be applied to one embodiment of the semiconductor device of the present invention. It is possible. Figures 32(A) to 32(D) show examples of the configuration of circuit 100. The circuit 100 shown in Figures 32(A) to 32(D) is the same as Figures 1(A) to 1(D), or Add switches 814 and 15 to the circuit 100 shown in Figures 34 to 36, and rewire. These correspond to configurations in which wiring 23a and wiring 23b are provided instead of 23. In Figures 32(A) to 32(D), the switch 814 is a signal of transistor 101. It has the function of controlling the conductivity between the other of the drain or the other and the wiring 23a. Furthermore, the above switch 15 is connected to the source or drain of transistor 101, and to the other side of wiring 2 It has the function of controlling the conductivity state with respect to 3b.

[0287] Note that wiring 23a and / or wiring 23b can be installed intersecting with wiring 21. However, it is also possible to install it parallel to the wiring 21 without crossing it.

[0288] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagrams in Figures 32(A) to 32(D). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0289] The semiconductor device shown in Figures 33(A) to 33(D) is the same as the one shown in Figures 32(A) to 32(D). In addition to circuit 100, there is circuit 201 which has the function of supplying a constant voltage or signal to wiring 21. , a circuit 202 which has the function of supplying a constant voltage or signal to wiring 22, and a circuit 202 which has the function of supplying a constant voltage or signal to wiring 23a Circuit 203a has the function of supplying pressure and signals, and supplies a constant voltage and signals to wiring 23b Circuit 203b has the function of supplying a constant voltage or signal to the wiring 24. 204 and each have the following. Specifically, circuit 203a supplies potential Vi1 to wiring 23a. It has the function of supplying power. In addition, circuit 203b has the power supply potential (high power supply potential or It has the function of supplying a low power supply potential, for example, potential VDD or potential VSS. Examples of circuits 203a and 203b include power supply circuits.

[0290] Therefore, wiring 23a has the function of being able to transmit or supply the potential Vi1. It has the ability to do so. Alternatively, wiring 23a has the function of an initialization wiring. It is desirable that the potential of wiring 23a be constant, but in the present invention The application method is not limited to this, and may also fluctuate like a pulse signal.

[0291] Therefore, wiring 23b has the function of being able to transmit or supply power potential. It has the function to do so. Alternatively, wiring 23b supplies current to transistor 101. It has the function of being able to do so. Alternatively, wiring 23b supplies current to load 104. It has the function of being able to do so. Alternatively, wiring 23b has the function of a power line. Alternatively, wiring 23b functions as a current supply line. While it is desirable for the potential to be constant, one embodiment of the present invention is not limited thereto. It may not be fixed and may fluctuate like a pulse signal. For example, the potential of wiring 23b is the same as that of load 104. Furthermore, the potential may be such that not only a forward bias voltage but also a reverse bias voltage is applied.

[0292] In addition to circuit 100, the semiconductor device also includes circuit 2 in Figures 33(A) to 33(D). One example is a case where circuit 01, circuit 202, circuit 203a, circuit 203b, and circuit 204 are included. As shown, the semiconductor device according to one aspect of the present invention does not necessarily have circuit 201, circuit 20 2. It is not necessary to have all of circuits 203a, 203b, and 204, and any of them It may have only one or more of them.

[0293] Note that the circuit 100 shown in Figures 32 and 33 consists of switch 11, switch 12, and switch 1 3. Transistors can be used in switches 814 and 15.

[0294] The circuit 100 shown in Figures 32 and 33 operates similarly to the circuit 100 shown in Figures 34 to 36. This can be done. However, in the circuit 100 shown in Figures 32 and 33, during period T11 Then, switch 814 is set to a conductive state and switch 15 is set to a non-conductive state. Also, during period T12 During period T15, switch 814 is in a non-conductive state and switch 15 is in a conductive state.

[0295] Note that the circuit 100 shown in Figures 32(B) and 33(B) is the same as in Figures 8, 9, 21, and 22. Similarly, it may further have a capacitive element 105 connected to the load 104. The circuit 100 shown in Figures 32(C) and 33(C) is connected to the light-emitting element 104a. Capacitive elements 105 may be further included. Similarly, as shown in Figures 32(D) and 33(D) The circuit 100 shown further includes a capacitive element 105 connected to the light-emitting element 104b. That is also good. Specifically, one electrode of the capacitive element 105 is connected to the other electrode of the capacitive element 103, and It is connected to either the source or drain of transistor 101. The electrode is connected to separately provided wiring 26, wiring 24, wiring 23, or wiring 22. ru.

[0296] Furthermore, the circuit 100 shown in Figures 32(B) to 32(D), and Figures 33(B) to 33 Either of the circuits obtained by adding the above-mentioned capacitive element 105 to the circuit 100 shown in (D) is used as a display device. It may also be used as a pixel. And, pixels corresponding to multiple hues are set on the display device. If selected, the channel of the transistor 101 in the pixel depends on the corresponding hue. The ratio of channel width to channel length may differ.

[0297] Note that Figures 32 and 33 do not show the switch 14, but are not limited to these figures. A switch 14 can be provided, similar to Figures 11 to 23.

[0298] Note that while Figures 32 and 33 do not show the switch 914, the design is not limited to these figures. As in Figures 24 to 87, a switch 914 can be provided.

[0299] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment Applicable to all or part of other embodiments, in any way. It can be done, or replaced and implemented.

[0300] (Embodiment 3) In this embodiment, an example of the configuration of circuit 100, which is a semiconductor device according to one aspect of the present invention, is described below. Let me explain. In this embodiment, a switch and Adding wiring, changing some connections, connecting one wire to another, and rewiring This section describes the configuration for stopping the system and changes to the drive method. Therefore, practical The details described in Embodiments 1 and 2 can also be applied to this embodiment.

[0301] The circuit 100 shown in Figure 43(A) is the same as the circuit 100 shown in Figure 11(C), and the switch 14 Configurations with different positions, or configurations in which a switch 14 is added to the circuit 100 shown in Figure 1(C). This corresponds to the configuration. In the circuit 100 shown in Figure 43(A), the switch 14 is the capacitive element 102 Controlling the conductivity between one electrode, or one electrode of the capacitive element 103, and the wiring 25. It has the function of doing so.

[0302] The operation is the same as in Figures 17 to 20. However, in Figure 18(A), the fourth operation is shown. In this case, switch 14 was in a conductive state, but in the case of Figure 43(A), the fourth operation In this case, it is preferable that the switch 14 is in a non-conductive state. However, in the embodiment of the present invention This is not the only possible aspect of this.

[0303] In addition, in Figure 43(A), a switch 914 is provided as shown in Figures 24 to 31. It is also possible. Note that in Figure 43(A), as in Figures 32 and 33, the switch It is also possible to install switch 15, part 814. Note that in Figure 43(A), Figure 3 As shown in 4, it is also possible to control the potential of the wiring 23. For example, see Figure 43(A Figure 43(F) shows the case where a switch 914 is provided as shown in Figure 30.

[0304] Also, similar to Figures 8, 9, 21, and 22, the circuit 100 shown in Figure 43(A) is configured as follows: Capacitive element 105 can be added. As an example, circuit 10 shown in Figure 43(B) 0 corresponds to a configuration in which a capacitive element 105 is added to the circuit 100 shown in Figure 43(A). Then, one electrode of the capacitive element 105 is connected to the other electrode of the capacitive element 103. The other electrode of the capacitive element 105 is connected to the wiring 26.

[0305] Furthermore, wiring 26 can be connected to various other wires, as shown in Figures 8 and 21. Yes. For example, the circuit 100 shown in Figure 43(C) is the same as the circuit 100 shown in Figure 43(B). And, as an example, we show an example where wiring 26 is connected to wiring 25. Wiring 26 is In addition to wire 25, there are also wires 24, 22, 23, gate signal wire, and 100 other circuit wires. It can be connected to various types of wiring, such as those mentioned above.

[0306] Furthermore, wiring 25 can be connected to various other wirings. For example, Figure 43(D The circuit 100 shown in Figure 43(A) is the same as the circuit 100 shown in Figure 43(A), where wiring 25 is wiring 24 An example of a connection is shown.

[0307] Furthermore, the circuit 100 shown in Figure 43(E) is the same as the circuit 100 shown in Figure 43(D), but with a capacitive element. This corresponds to a configuration with 105 added. And one electrode of the above capacitive element 105 is a capacitive element The other electrode of the sub-electrode 103 is connected, and the other electrode of the capacitive element 105 is connected to the wiring 26. It is being done.

[0308] Furthermore, the semiconductor device shown in Figure 44, in addition to the circuit 100 shown in Figure 43, has a constant current in the wiring 21. Circuit 220 having the function of supplying pressure or signals, function of supplying a constant voltage or signal to wiring 22 Circuit 221 having a function to supply a constant voltage or signal to wiring 23, circuit 222 having a function to supply a constant voltage or signal to wiring 23, Circuit 223 has the function of supplying a constant voltage or signal to line 24, and wiring 25 has the function of supplying a constant voltage or signal Circuit 224 has the function of supplying a constant voltage or signal to wiring 26. Each of the circuits 225 has multiple circuits.

[0309] Figures 43 and 44 show the configuration of circuit 100 when light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 43 and 44. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0310] Also, as with Figure 43(D), in Figure 11 and other figures, wiring 25 is connected to various other wires. It is possible to do so. For example, the circuit 100 shown in Figure 45(A) is shown in Figure 11(C) In the circuit 100, wire 25 is connected to wire 24.

[0311] Furthermore, for the circuit 100 shown in Figure 45(A), as shown in Figures 8, 9, 21, 22, etc. Similarly, it is possible to add capacitive elements 105 or connect wiring. For example, The circuit 100 shown in Figure 45(B) is the same as the circuit 100 shown in Figure 45(A), but with a capacitive element 105 This corresponds to a configuration with the addition of the above capacitive element 105. The other electrode of the capacitive element 105 is connected to the other electrode of 3, and the other electrode of the capacitive element 105 is connected to the wiring 26. Yes. Note that wiring 25 can also be connected to wiring 26 instead of wiring 24. Furthermore, both wire 26 and wire 25 can also be connected to wire 24.

[0312] Furthermore, the semiconductor devices shown in Figures 45(C) and 45(D) are also shown in Figures 45(A) and 45(B) In addition to the circuit 100 shown in (), there is a circuit 2 which has the function of supplying a constant voltage or signal to the wiring 21. 20. Circuit 221 having the function of supplying a constant voltage or signal to wiring 22, and wiring 23 with a constant voltage Circuit 222 has the function of supplying pressure or signals, and wiring 24 has the function of supplying a constant voltage or signal. Circuit 223 has a function of supplying a constant voltage or signal to the wiring 26, and circuit 225 has a function of supplying a constant voltage or signal to the wiring 26. Each has multiple circuits.

[0313] Note that Figure 45 shows the configuration of circuit 100 when light-emitting element 104a is used, A semiconductor device according to one aspect of the present invention is a circuit 100 shown in Figure 45, in which a light-emitting element 10 Configuration without 4a, or load 104 or light-emitting element 104 instead of light-emitting element 104a It may also have a configuration that includes b.

[0314] In the circuit shown in Figure 1, etc., either or both of switch 14 and switch 914 Additionally, it is possible to install both switch 14 and switch 914. In other words, add switch 914 to Figures 11, 32, 34, 43, 45, etc. For example, add switch 14 to Figures 24, 26, 28, 30, 32, 34, etc. This is possible. For example, the circuit 100 shown in Figure 46(A) is the same as the circuit shown in Figure 11(C). A configuration in which switch 914 is added to path 100, or the circuit 100 shown in Figure 28(C) This corresponds to a configuration in which switch 14 is added. In the circuit 100 shown in Figure 46(A), the switch Chi 914 connects to either the source or drain of transistor 101 and to the other side of capacitive element 103. It has the function of controlling the conductivity between the electrode or the anode of the light-emitting element 104a.

[0315] Note that in Figure 46(A), as in Figures 44(D) and 45, wiring 25 is connected to other wiring. It is possible to connect to it. For example, in the circuit 100 shown in Figure 46(A), wiring An example of connecting 25 to wiring 24 is shown in Figure 46(B).

[0316] Furthermore, the location where switch 14 is installed is not limited to Figure 46(A), but can be in other locations as in Figure 43. It can also be installed in the location. The circuit 100 shown in Figure 46(C) is compared to Figure 46(A). This is an example where a switch 14 is provided, similar to Figure 43(A), and the switch 14 is a capacitive element The conductivity between one electrode of sub-element 102 and one electrode of capacitive element 103 and the wiring 25 is It has a control function.

[0317] Furthermore, it is possible to have not just one but multiple switches corresponding to switch 14. For example, the circuit 100 shown in Figure 46(D) uses a capacitive element 10 instead of a switch 14. A device that controls the conductivity between the other electrode of 3 and the anode of the light-emitting element 104a and the wiring 24. A switch 14a having a function, and one electrode of the capacitive element 102 and one electrode of the capacitive element 103 The point is that it has an electrode and a switch 14b that has the function of controlling the conductivity between the electrode and the wiring 25. In this case, the configuration differs from that of circuit 100 shown in Figure 46(A). That is, Figure 46(D) is, It can be said that two switches, each labeled "Switch 14," have been added.

[0318] Furthermore, the semiconductor device shown in Figure 47, in addition to the circuit 100 shown in Figure 46, has a constant current in the wiring 21. Circuit 220 having the function of supplying pressure or signals, function of supplying a constant voltage or signal to wiring 22 Circuit 221 having a function to supply a constant voltage or signal to wiring 23, circuit 222 having a function to supply a constant voltage or signal to wiring 23, Circuit 223 has the function of supplying a constant voltage or signal to line 24, and wiring 25 has the function of supplying a constant voltage or signal The circuit 224 has multiple circuits, each having the function of supplying [something].

[0319] Figures 46 and 47 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 46 and 47. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0320] Furthermore, the configuration that includes switches 14 and 914 is not limited to Figures 46 and 87, Various configurations are possible. In this case, the driving method is shown in Figures 5, 6, 17, and 18. This can be done in the same way as in Figures 20, 35, and 36. The circuit 100 shown in Figure 48(A) is This corresponds to the circuit 100 shown in Figure 46(A) with a different configuration where the position of the switch 14 is different. Figure 4 In the circuit 100 shown in 8(A), switch 14 controls the source or source of transistor 101. It has the function of controlling the conductivity between one side of the rain and the wiring 25.

[0321] Also, in Figure 48(A), as in Figures 44(D) and 45, wiring 25 is connected to another wiring. It is possible that, for example, the circuit 100 shown in Figure 48(B) is the same as the circuit shown in Figure 46(A). An example is shown where wiring 25 is connected to wiring 24 in path 100.

[0322] Furthermore, the semiconductor devices shown in Figures 48(C) and 48(D) are also shown in Figures 48(A) and 48(B) In addition to the circuit 100 shown in (), there is a circuit 2 which has the function of supplying a constant voltage or signal to the wiring 21. 20. Circuit 221 having the function of supplying a constant voltage or signal to wiring 22, and wiring 23 with a constant voltage Circuit 222 has the function of supplying pressure or signals, and wiring 24 has the function of supplying a constant voltage or signal. Circuit 223 has the function of supplying a constant voltage or signal to the wiring 25, and circuit 224 has the function of supplying a constant voltage or signal to the wiring 25. Each has multiple circuits.

[0323] Note that Figure 48 shows the configuration of circuit 100 when light-emitting element 104a is used, A semiconductor device according to one aspect of the present invention, in the circuit 100 shown in Figure 48, has a light-emitting element 10 Configuration without 4a, or load 104 or light-emitting element 104 instead of light-emitting element 104a It may also have a configuration that includes b.

[0324] The circuit 100 shown in Figure 49(A) is a different case when switches 14 and 914 are provided. This is an example, and is a configuration in which a switch 914 is added to the circuit 100 shown in Figure 11(C), and This corresponds to the circuit 100 shown in Figure 30(C) with the addition of switch 14. Figure 49 In the circuit 100 shown in (A), the switch 914 controls the source or source of transistor 101. Conduction between one electrode of the rain and the other electrode of the capacitive element 103 and the anode of the light-emitting element 104a It has a function to control the state.

[0325] The driving method in this case is the same as in Figures 5, 6, 17, 18, 20, 35, and 36. It is possible to do so. An example of a driving method is shown below.

[0326] First, let's explain the first operation that takes place during period T11. During period T11, the following operation is performed: Switch 11, switch 914 are in a non-conductive state, switch 12, switch 13, and switch 1 4 is in a conducting state. Therefore, during period T11, the voltage Vi2-Vi1 across the capacitive element 102 is When supplied, the anode of the light-emitting element 104a becomes potential Vi1, and the gate of transistor 101 The source-to-source voltage (Vgs101) is equal to the voltage Vi2 - Vi1. In other words, the transistor This means that element 101 and the capacitive element 102 are being initialized.

[0327] Furthermore, the switch 11 controls the potential of the wiring 21 to the potential of the transistor 101 and the capacitive element 102. If it does not adversely affect the initialization, it may be in a conductive state. In that case, switch 1 Point 4 may be in a non-conductive state.

[0328] Note that switch 13 may be in a non-conductive state.

[0329] Note that switch 914 may be in a conductive state.

[0330] The second operation that takes place during period T12 will be described. During period T12, switch 1 1. Switches 14 and 914 are in a non-conductive state, while switches 12 and 13 are conductive. This is the state in which switches 11, 914, and 14 become non-conductive. The charge stored in the capacitive element 102 is released through the transistor 101, The potential of the source of transistor 101 rises. And when transistor 101 turns off... Then, the discharge of charge from the capacitive element 102 stops. Ultimately, the threshold voltage of transistor 101 is reduced. The pressure Vth is held in the capacitive element 102. Therefore, during period T12, the threshold pressure is maintained in the capacitive element 102. The voltage value Vth is maintained, and the anode of the light-emitting element 104a becomes potential Vi2-Vth. The gate-source voltage (Vgs101) of transistor 101 is equal to the threshold voltage Vth (or V The voltage will be a voltage of a magnitude corresponding to th. In other words, the threshold voltage Vth of transistor 101. (Or a voltage of a magnitude corresponding to Vth) can be obtained.

[0331] Furthermore, in the second operation, whether the threshold voltage Vth of transistor 101 is positive or negative is... It can be operated regardless of the condition. This is because transistor 101 is in the off state. This is because the source potential of transistor 101 can be raised until that point. When the source potential of transistor 101 is higher than the gate potential of transistor 101 Finally, transistor 101 turns off, and Vgs101 becomes Vth. This is because it is capable. Therefore, transistor 101 is enhancement type (normally Whether it is an off-type or a depletion-type (normal-on-type), it will operate normally. It is possible.

[0332] Furthermore, when the potential of the anode of the light-emitting element 104a increases, current flows to the light-emitting element 104a. It is desirable to prevent current from flowing. Therefore, it is preferable to set the potential Vi2 to a low value. However, the switch 914 is not conductive. By setting it to this state, it is possible to prevent current from flowing to the light-emitting element 104a. Therefore, the potential Vi2 can be a high value.

[0333] Note that switch 914 may be in a conductive state.

[0334] The third operation that takes place during period T13 will be described. During period T13, switch 1 Switch 1 and switch 14 are in a conductive state, and switches 12, 13, and 914 are not conductive. This is the state. Also, potential Vsig is supplied to wiring 21. Therefore, during period T13, A threshold voltage Vth (or a voltage of a magnitude corresponding to Vth) is held in the capacitive element 102. The voltage Vsig-Vi1 is maintained in the element 103, and the anode of the light-emitting element 104a is at potential V i1 is obtained, and the gate potential of transistor 101 becomes potential Vsig + Vth, The gate-source voltage (Vgs101) of ZISTRA 101 is Vsig + Vth - Vi1 Therefore, the potential Vsig can be input to the capacitive element 103. Alternatively, The sum of the voltage of the capacitance element 102 and the voltage of the capacitance element 103 is the gate saw of transistor 101. It is possible to make it so that it becomes a voltage between the two points.

[0335] It is also possible to set switch 14 to a non-conductive state at this time.

[0336] Note that switch 914 may be in a conductive state.

[0337] The fourth operation, which takes place during period T14, will be described. During period T14, switch 1 1. Switches 12, 13, and 14 are in a non-conductive state, and switch 91 4 is in a conductive state. Therefore, during period T14, the threshold voltage Vth is maintained in the capacitive element 102. The voltage Vsig-Vi1 is maintained in the capacitive element 103, and the anode of the light-emitting element 104a The potential is Vel, and the gate potential of transistor 101 is Vsig + Vth + Ve The voltage becomes l, and the gate-source voltage of transistor 101 (Vgs101) is the voltage Vsig+ Vth-Vi1. Therefore, a current of a magnitude corresponding to the potential Vsig is applied to the light-emitting element 10. It can be supplied to 4a, causing the light-emitting element 104a to emit light with a brightness corresponding to the potential Vsig. It is possible.

[0338] Furthermore, during a portion of the fourth operation, transistor 101 is forcibly turned off. This also prevents current from flowing through the light-emitting element 104a, so that the light-emitting element 104a does not emit light. It is also possible to create such a situation. In other words, it is possible to introduce a period of non-luminescence. Example For example, by turning on switch 12, transistor 101 is turned off. This is possible. Alternatively, by turning on switch 14, current can be supplied to the light-emitting element 104a. It is possible to prevent the flow from occurring. Alternatively, by turning off switch 914... Therefore, it is possible to prevent current from flowing to the light-emitting element 104a.

[0339] Furthermore, after the period T13 in which the third operation described above is performed, the period T14 in which the fourth operation described above is performed Before that, a period T16 may be provided during which the sixth operation is performed.

[0340] The sixth operation, which takes place during period T16, will be described. During period T16, switch 1 Switch 2 is in a conductive state, and switches 11, 13, 914, and 14 are not conductive. This is the state. Therefore, during period T16, the gate-source voltage (Vg) of transistor 101 is... s101) is the voltage Vsig + Vth - Vi1 - Vα.

[0341] In the sixth operation, the potential Vα is such that the anode of the light-emitting element 104a is electrically floating. This is the potential that fluctuates when the transistor is in the "off" state. The potential Vα is when transistor 101 is off. Therefore, the capacitance value of the light-emitting element 104a and the capacitance of the capacitive elements 102 and 103 The value is determined according to the ratio of the values. However, depending on the height of the potential Vsig, the transient Since transistor 101 is turned on, power is supplied to the anode of light-emitting element 104a via transistor 101. Load flows in. Therefore, the potential Vα is not determined solely by the ratio of capacitances mentioned above, The value also changes depending on the charge flowing into the anode of the optical element 104a.

[0342] Furthermore, switches 12 and 13 are controlled to be turned on and off at the same time. This is possible. Therefore, switch 12 and switch 13 use transistors of the same polarity. When configured in this way, it is possible to connect the gates of the transistors to each other, similar to Figure 15. That is the case.

[0343] Furthermore, wiring 22 and wiring 25 can be connected to various other wires. For example, The circuit 100 shown in Figure 49(B) is the same as the circuit 100 shown in Figure 49(A), but with wiring 25 This shows the case where it is connected to wiring 24.

[0344] Furthermore, as in Figures 8, 9, 21, and 22, a capacitive element 105 is added. It is also possible that, for example, the circuit 100 shown in Figure 49(C) is the same as the circuit 1 shown in Figure 49(A). This corresponds to a configuration in which a capacitive element 105 is added to 00. And one of the capacitive elements 105 The electrode of is connected to the other electrode of the capacitive element 103, and the other electrode of the capacitive element 105 is It is connected to wiring 26.

[0345] Furthermore, as an example of a case where the capacitive element 105 is provided in a different arrangement than in Figure 49(C), see Figure 49( The circuit 100 shown in D) is obtained by adding a capacitive element 105 to the circuit 100 shown in Figure 49(A). This corresponds to the configuration described above. And one electrode of the capacitive element 105 is the positive electrode of the light-emitting element 104a. The other electrode of the capacitive element 105 is connected to the wiring 26.

[0346] Furthermore, the semiconductor device shown in Figure 50, in addition to the circuit 100 shown in Figure 49, has a constant current in the wiring 21. Circuit 220 having the function of supplying pressure or signals, function of supplying a constant voltage or signal to wiring 22 Circuit 221 having a function to supply a constant voltage or signal to wiring 23, circuit 222 having a function to supply a constant voltage or signal to wiring 23, Circuit 223 has the function of supplying a constant voltage or signal to line 24, and wiring 25 has the function of supplying a constant voltage or signal Circuit 224 has the function of supplying a constant voltage or signal to wiring 26. Each of the circuits 225 has multiple circuits.

[0347] Figures 49 and 50 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 49 and 50. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0348] Furthermore, in Figures 49(C) and 49(D), Figures 8, 21, 43, 45, and 4 Similar to 6, wires 22, 23, 24, 25, and 26 are connected to each other. It is possible to continue.

[0349] Note that Figure 49 shows the case where one capacitive element 105 is added, but the embodiment of the present invention The embodiment is not limited thereto. In the circuit 100 to which the capacitive element 105 is added, further It is possible to add many capacitive elements. For example, the circuit 100 shown in Figure 51(A) Capacitive elements 105a and 105b are added to the circuit 100 shown in Figure 49(A). This corresponds to the configuration described above. And one electrode of the capacitive element 105a is the same as that of the capacitive element 103. One electrode is connected to the other electrode of the capacitive element 105a, and the other electrode is connected to the wiring 26. One electrode of the above-mentioned capacitive element 105b is connected to the anode of the light-emitting element 104a, and the above-mentioned capacitance The other electrode of element 105b is connected to wiring 27.

[0350] Furthermore, wiring 25 can be connected to other wiring, as shown in Figure 51(B), for example. Circuit 100 is shown in Figure 50(C) and connects wiring 25 to wiring 24. This corresponds to the configuration described above.

[0351] Furthermore, the circuit 100 shown in Figure 51(C) is the same as the circuit 100 shown in Figure 50(D), This corresponds to a configuration in which wire 25 is connected to wiring 24.

[0352] Furthermore, the circuit 100 shown in Figure 51(D) is the same as the circuit 100 shown in Figure 51(A), This corresponds to a configuration in which wire 25 is connected to wiring 24.

[0353] Furthermore, the semiconductor device shown in Figure 52, in addition to the circuit 100 shown in Figure 51, has a constant current in the wiring 21. Circuit 220 having the function of supplying pressure or signals, function of supplying a constant voltage or signal to wiring 22 Circuit 221 having a function to supply a constant voltage or signal to wiring 23, circuit 222 having a function to supply a constant voltage or signal to wiring 23, Circuit 223 has the function of supplying a constant voltage or signal to line 24, and wiring 25 has the function of supplying a constant voltage or signal Circuit 224 has the function of supplying a constant voltage or signal to wiring 26. Multiple circuits 226 that have the function of supplying a constant voltage or signal to circuit 225 and wiring 27. Each has its own circuit.

[0354] An example of circuit 226 is a power supply circuit. Therefore, the wiring 27 is at a predetermined potential. It has the ability to communicate or supply information. Wiring 27 functions as a capacitance wiring. The potential of wiring 27 is constant. While it is desirable that the position be such, one embodiment of the present invention is not limited thereto, and the pulse signal The number may vary as shown. Note that wiring 27 can be connected to other wiring. For example, wiring 25, wiring 24, wiring 22, wiring 26, wiring 23, gate signal wire, other wires It can be connected to various types of wiring, such as the wiring for road 100.

[0355] Figures 51 and 52 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 51 and 52. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0356] Furthermore, in the various circuits described so far, wiring 22 can be connected to other wiring. It is possible. As a result, it becomes possible to reduce the number of wires. For example, wire 22 can be wired Wire 21, Wire 23, Wire 23a, Wire 23b, Wire 24, Wire 25, Wire 26, Wire 27 It is possible to connect to the following: Alternatively, the wiring 22 can be connected to the scan line, gate line, and transient It can be connected to the gate of the sta and the wiring connected to it. See Figure 5 for an example. The circuit 100 shown in 3(A) is the same as the circuit 100 shown in Figure 11(C), with the wiring 22 arranged The configuration connected to line 21 is shown.

[0357] Similarly, the circuit 100 shown in Figure 53(B) is the same as the circuit 100 shown in Figure 1(C), This shows a configuration in which wire 22 is connected to wiring 21.

[0358] Furthermore, as shown in Figures 8, 9, 21, and 22, it is also possible to add a capacitive element 105. For example, the circuit 100 shown in Figure 53(C) is the same as the circuit 100 shown in Figure 53(A). or a configuration in which a capacitive element 105 is added, or in the circuit 100 shown in Figure 21(A) This corresponds to a configuration in which wire 22 is connected to wiring 21.

[0359] Similarly, as shown in Figure 43, it is also possible to connect wiring 22 to wiring 21. For example, the circuit 100 shown in Figure 53(D) is the same as the circuit 100 shown in Figure 43(B). The configuration involves connecting wiring 22 to wiring 21.

[0360] Furthermore, the semiconductor device shown in Figure 54, in addition to the circuit 100 shown in Figure 53, has a constant current in the wiring 21. Circuit 220 has the function of supplying pressure or signals, and wiring 23 has the function of supplying a constant voltage or signal. Circuit 222 having a function to supply a constant voltage or signal to wiring 24, wiring 223 having a function to supply a constant voltage or signal to wiring 24 Circuit 224 has the function of supplying a constant voltage or signal to line 25, and wiring 26 has the function of supplying a constant voltage or signal The circuit 225 has multiple circuits, each having the function of supplying [something].

[0361] Figures 53 and 54 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 53 and 54. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0362] Furthermore, if a certain wire is connected to the first wire, then the second wire is also connected to the first wire. It is possible to connect to a third wire. For example, if wire 22 is one wire If connected to one wire, then wire 25 can also be connected to another wire. For example For example, the circuit 100 shown in Figure 55(A) is the same as the circuit 100 shown in Figure 11(C), in terms of wiring. In the configuration shown in Figure 54(A), wire 22 is connected to wire 21 and wire 25 is connected to wire 24. In the circuit 100 shown, the wiring 25 is connected to the wiring 24, or in Figure 45. (A) shows a circuit 100 in which wiring 22 is connected to wiring 21.

[0363] Furthermore, as shown in Figures 8, 9, 21, and 22, it is also possible to add a capacitive element 105. For example, the circuit 100 shown in Figure 55(B) is the same as the circuit 100 shown in Figure 55(A). , a configuration in which a capacitive element 105 is added, or in the circuit 100 shown in Figure 45(B) This corresponds to a configuration in which wire 22 is connected to wiring 21.

[0364] Furthermore, this method can also be applied when the position of switch 14 is changed, as shown in Figure 55(C). The circuit 100 shown is the same as the circuit 100 shown in Figure 43(E), but with wiring 22 connected to wiring 21. This shows the connected configuration.

[0365] Furthermore, the semiconductor device shown in Figure 56, in addition to the circuit 100 shown in Figure 55, has a constant current in the wiring 21. Circuit 220 has the function of supplying pressure or signals, and wiring 23 has the function of supplying a constant voltage or signal. Circuit 222 having a function to supply a constant voltage or signal to wiring 24, wiring 223 having a function to supply a constant voltage or signal to wiring 24 Multiple circuits among the circuits 225 that have the function of supplying a constant voltage or signal to line 26 are each To possess

[0366] Figures 55 and 56 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 55 and 56. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0367] Furthermore, the circuit 100 shown in Figure 57(A) is the same as the circuit 100 shown in Figure 46(A), This shows an example where wire 22 is connected to wiring 21.

[0368] Furthermore, the circuit 100 shown in Figure 57(B) is the same as the circuit 100 shown in Figure 28(C), This shows an example where wire 22 is connected to wiring 21.

[0369] Additionally, as shown in Figures 8, 9, 21, and 22, it is also possible to add switch 914. For example, the circuit 100 shown in Figure 57(C) is the same as the circuit 100 shown in Figure 53(C). This is equivalent to a configuration with the addition of switch 914.

[0370] Furthermore, the circuit 100 shown in Figure 57(D) is the same as the circuit 100 shown in Figure 53(D), but with a switch. Configuration with the addition of 914, or configuration with the arrangement of switch 14 changed in Figure 57(C) It corresponds to "achievement".

[0371] Furthermore, the semiconductor device shown in Figure 58, in addition to the circuit 100 shown in Figure 57, has a constant current in the wiring 21. Circuit 220 has the function of supplying pressure or signals, and wiring 23 has the function of supplying a constant voltage or signal. Circuit 222 having a function to supply a constant voltage or signal to wiring 24, wiring 223 having a function to supply a constant voltage or signal to wiring 24 Circuit 224 has the function of supplying a constant voltage or signal to line 25, and wiring 26 has the function of supplying a constant voltage or signal The circuit 225 has multiple circuits, each having the function of supplying [something].

[0372] Figures 57 and 58 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 57 and 58. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0373] Furthermore, the circuit 100 shown in Figure 59(A) is the same as the circuit 100 shown in Figure 57(A), The configuration when wire 25 is connected to wiring 24 is shown.

[0374] Furthermore, the circuit 100 shown in Figure 59(B) is the same as the circuit 100 shown in Figure 57(C), The configuration when wire 25 is connected to wiring 24 is shown.

[0375] Furthermore, the circuit 100 shown in Figure 59(C) is the same as the circuit 100 shown in Figure 57(D), The configuration when wire 25 is connected to wiring 24 is shown.

[0376] Furthermore, the semiconductor device shown in Figure 60, in addition to the circuit 100 shown in Figure 59, has a constant current in the wiring 21. Circuit 220 has the function of supplying pressure or signals, and wiring 23 has the function of supplying a constant voltage or signal. Circuit 222 having a function to supply a constant voltage or signal to wiring 24, wiring 223 having a function to supply a constant voltage or signal to wiring 24 Multiple circuits among the circuits 225 that have the function of supplying a constant voltage or signal to line 26 are each To possess

[0377] Figures 59 and 60 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 59 and 60. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0378] Note that wiring 22 can be connected to wiring other than wiring 21. For example, wiring 22 It can also be connected to wiring 24. For example, the circuit 100 shown in Figure 61(A) is In the circuit 100 shown in Figure 11(C), wiring 22 is connected to wiring 24. .

[0379] Furthermore, the circuit 100 shown in Figure 61(B) is the same as the circuit 100 shown in Figure 1(C), in terms of wiring. This shows the configuration in which 22 is connected to wiring 24.

[0380] Furthermore, the circuit 100 shown in Figure 61(C) is the same as the circuit 100 shown in Figure 21(A), This shows a configuration in which wire 22 is connected to wiring 24.

[0381] Furthermore, the circuit 100 shown in Figure 61(D) is the same as the circuit 100 shown in Figure 43(A), This shows a configuration in which wire 22 is connected to wiring 24.

[0382] Furthermore, the semiconductor device shown in Figure 62, in addition to the circuit 100 shown in Figure 61, has a constant current in the wiring 21. Circuit 220 has the function of supplying pressure or signals, and wiring 23 has the function of supplying a constant voltage or signal. Circuit 222 having a function to supply a constant voltage or signal to wiring 24, wiring 223 having a function to supply a constant voltage or signal to wiring 24 Circuit 224 has the function of supplying a constant voltage or signal to line 25, and wiring 26 has the function of supplying a constant voltage or signal The circuit 225 has multiple circuits, each having the function of supplying [something].

[0383] Figures 61 and 62 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 61 and 62. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0384] Furthermore, as shown in Figures 8, 9, 21, and 22, it is also possible to add a capacitive element 105. For example, the circuit 100 shown in Figure 63(A) is the same as the circuit 100 shown in Figure 61(B). In a configuration with the addition of a capacitive element 105, or in the circuit 100 shown in Figure 8(A), This corresponds to a configuration in which wire 22 is connected to wiring 24.

[0385] Furthermore, the circuit 100 shown in Figure 63(B) is the same as the circuit 100 shown in Figure 46(A), This corresponds to a configuration in which wire 22 is connected to wiring 24.

[0386] Furthermore, the circuit 100 shown in Figure 63(C) is the same as the circuit 100 shown in Figure 28(C), This corresponds to a configuration in which wire 22 is connected to wiring 24.

[0387] Furthermore, the circuit 100 shown in Figure 63(D) is the same as the circuit 100 shown in Figure 63(C). In the configuration shown in Figures 8, 9, 21, and 22, a capacitive element 105 is added to 100. It corresponds to.

[0388] Furthermore, the semiconductor device shown in Figure 64, in addition to the circuit 100 shown in Figure 63, has a constant current in the wiring 21. Circuit 220 has the function of supplying pressure or signals, and wiring 23 has the function of supplying a constant voltage or signal. Circuit 222 having a function to supply a constant voltage or signal to wiring 24, wiring 223 having a function to supply a constant voltage or signal to wiring 24 Circuit 224 has the function of supplying a constant voltage or signal to line 25, and wiring 26 has the function of supplying a constant voltage or signal The circuit 225 has multiple circuits, each having the function of supplying [something].

[0389] Figures 63 and 64 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 63 and 64. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0390] Furthermore, the circuit 100 shown in Figure 65(A) is the same as the circuit 100 shown in Figure 61(D), but with a switch. This corresponds to a configuration with the addition of 914. In the circuit 100 shown in Figure 65(A), switch 914 However, one of the source or drain electrodes of transistor 101 and the other electrode of capacitive element 103 It also has a function to control the conductivity state between the anode and the light-emitting element 104a.

[0391] Furthermore, the circuit 100 shown in Figure 65(B) is the same as the circuit 100 shown in Figure 61(A), This shows an example where wire 25 is connected to wiring 24.

[0392] Furthermore, the circuit 100 shown in Figure 65(C) is the same as the circuit 100 shown in Figure 61(C), This shows an example where wire 25 is connected to wiring 24.

[0393] Furthermore, the circuit 100 shown in Figure 65(D) is the same as the circuit 100 shown in Figure 61(D), This shows an example where wire 25 is connected to wiring 24.

[0394] Furthermore, the semiconductor device shown in Figure 66, in addition to the circuit 100 shown in Figure 65, has a constant current in the wiring 21. Circuit 220 has the function of supplying pressure or signals, and wiring 23 has the function of supplying a constant voltage or signal. Circuit 222 having a function to supply a constant voltage or signal to wiring 24, wiring 223 having a function to supply a constant voltage or signal to wiring 24 Circuit 224 has the function of supplying a constant voltage or signal to line 25, and wiring 26 has the function of supplying a constant voltage or signal The circuit 225 has multiple circuits, each having the function of supplying [something].

[0395] Figures 65 and 66 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 65 and 66. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0396] Furthermore, the circuit 100 shown in Figure 67(A) is the same as the circuit 100 shown in Figure 65(A). 8. This corresponds to a configuration in which a capacitive element 105 is added, similar to Figures 9, 21, and 22.

[0397] Furthermore, the circuit 100 shown in Figure 67(B) is the same as the circuit 100 shown in Figure 65(D). 8. This corresponds to a configuration in which a capacitive element 105 is added, similar to Figures 9, 21, and 22.

[0398] Furthermore, the circuit 100 shown in Figure 67(C) is the same as the circuit 100 shown in Figure 63(C). 8. This corresponds to a configuration in which a capacitive element 105 is added, similar to Figures 9, 21, and 22.

[0399] Furthermore, the semiconductor device shown in Figure 68, in addition to the circuit 100 shown in Figure 67, has a constant current in the wiring 21. Circuit 220 has the function of supplying pressure or signals, and wiring 23 has the function of supplying a constant voltage or signal. Circuit 222 having a function to supply a constant voltage or signal to wiring 24, wiring 223 having a function to supply a constant voltage or signal to wiring 24 Circuit 224 has the function of supplying a constant voltage or signal to line 25, and wiring 26 has the function of supplying a constant voltage or signal The circuit 225 has multiple circuits, each having the function of supplying [something].

[0400] Figures 67 and 68 show the configuration of circuit 100 when the light-emitting element 104a is used. However, a semiconductor device according to one aspect of the present invention has the circuit 100 shown in Figures 67 and 68. In this configuration, there is no light-emitting element 104a, or instead of the light-emitting element 104a, there is a load 104 Alternatively, the configuration may include a light-emitting element 104b.

[0401] In addition, in the circuit 100 shown in Figure 32, the switch 14 is also the same as in the figures described above. It is possible to add switches 914, capacitive elements 105, etc. Alternatively, as shown in Figure 32. In circuit 100, various wires are connected to other various wires to reduce the number of wires. It is possible to do so. For example, the circuit 100 shown in Figures 69(A) to 69(D) is shown in Figure 1 Similar to step 1, add a switch 14 to the circuit 100 shown in Figures 32(A) to 32(D). These correspond to the respective configurations.

[0402] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 69(A) to 69(D). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is provided. It is also acceptable to have them.

[0403] The semiconductor device shown in Figures 70(A) to 70(D) is shown in Figures 69(A) to 69(D). In addition to circuit 100, there is circuit 220 which has the function of supplying a constant voltage or signal to wiring 21. The circuit 221 has the function of supplying a constant voltage or signal to the wiring 22, and the circuit 221 has the function of supplying a constant voltage or signal to the wiring 23a Circuit 222a has the function of supplying pressure and signals, and supplies a constant voltage and signals to wiring 23b Circuit 222b has the function of supplying a constant voltage or signal to the wiring 24. Circuit 223 and circuit 224, which has the function of supplying a constant voltage or signal to wiring 25, are respectively To possess.

[0404] In addition to circuit 100, the semiconductor device also includes circuit 2 in Figures 70(A) to 70(D). 20, having circuits 221, 222a, 222b, 223, and 224 Although this is shown as an example, the semiconductor device according to one aspect of the present invention does not necessarily have circuit 10 In addition to 0, circuits 220, 221, 222a, 222b, 223, and It is not necessary to have all of the circuits 224; having only one or more of them is sufficient. stomach.

[0405] Furthermore, the circuit 100 shown in Figure 73(A) is the same as the circuit 100 shown in Figure 32(C), but with the addition of switch 9 This corresponds to a configuration with 14 added. And switch 914 is the saw of transistor 101. The other electrode of the capacitive element 103 and the anode of the light-emitting element 104a are connected to either the drain or the other electrode of the capacitive element 103. It has the function of controlling the conductivity between them.

[0406] Furthermore, the circuit 100 shown in Figure 73(B) is the same as the circuit 100 shown in Figure 69(C), but with a switch. This corresponds to a configuration with the addition of 914. Switch 914 is a switch for transistor 101. The electrode on one side of the drain or socket, the other electrode of the capacitive element 103, and the anode of the light-emitting element 104a. It has a function to control the conductivity state between them.

[0407] Furthermore, a semiconductor device according to one aspect of the present invention is shown in the circuit diagram in Figures 73(A) and 73(B). In addition to 100, a circuit that has the function of supplying various constant voltages and signals to circuit 100 is further It is acceptable to have it.

[0408] The semiconductor device shown in Figures 73(C) and 73(D) is shown in Figures 73(A) and 73(B). In addition to circuit 100, there is circuit 220 which has the function of supplying a constant voltage or signal to wiring 21. The circuit 221 has the function of supplying a constant voltage or signal to the wiring 22, and the circuit 221 has the function of supplying a constant voltage or signal to the wiring 23a Circuit 222a has the function of supplying pressure and signals, and supplies a constant voltage and signals to wiring 23b Circuit 222b has the function of supplying a constant voltage or signal to the wiring 24. Circuit 223 and circuit 224, which has the function of supplying a constant voltage or signal to wiring 25, are respectively To possess.

[0409] Note that in Figures 73(C) and 73(D), the semiconductor device includes circuit 2 in addition to circuit 100. 20, having circuits 221, 222a, 222b, 223, and 224 Although this is shown as an example, the semiconductor device according to one aspect of the present invention does not necessarily have circuit 10 In addition to 0, circuits 220, 221, 222a, 222b, 223, and It is not necessary to have all of the circuits 224; having only one or more of them is sufficient. stomach.

[0410] In addition, in the circuit 100 shown in Figure 34, as in the figures described above, switch 14 It is possible to add switches 914, capacitive elements 105, etc. Alternatively, as shown in Figure 34. In circuit 100, various wires are connected to other various wires to reduce the number of wires. It is possible to do so. For example, in Figures 71(A) to 71(D), and in Figures 34(A) to 3 The following are examples of the layout of circuit 100 shown in 4(D).

[0411] Using the circuit 100 shown in Figure 71(C) as an example, the operation of a semiconductor device according to one aspect of the present invention Let me give you an example.

[0412] The operation of circuit 100 shown in Figure 71(C) mainly consists of the first operation, the second operation, the third operation, and the It can be divided into 4 actions. However, it is not limited to this, and new actions may be added, or It is also possible to remove some of the functions.

[0413] First, we will explain the first operation that takes place during period T11. During period T11, Figure 7 As shown in 2(A), switches 11, 13, and 14 are in a non-conductive state. Switch 12 is in a conductive state. Also, potential Vi1 is supplied to wiring 23. Therefore, During period T11, the anode of the light-emitting element 104a becomes potential Vi1, and transistor 101 The gate-source voltage (Vgs101) is equal to the voltage Vi2 - Vi1.

[0414] Note that Figure 72(A) shows an example where switch 11 is in a non-conductive state, Switch 11 may be in a conductive state. Also, in Figure 72(A), switch 14 is in a non-conductive state. The case of a conductive state is shown as an example, but switch 14 may also be in a conductive state. In this case, the potential Vi3 is supplied to the wiring 25. And the light-emitting element 104a The node is at potential Vi3, and the gate-source voltage of transistor 101 (Vgs101) The voltage becomes Vi2-Vi3. Also, switch 13 may be in a conductive state.

[0415] The second operation performed during period T12 will be described. During period T12, Figure 72(B As shown in (), switches 11 and 14 are in a non-conductive state, and switches 12 and 14 are in a non-conductive state. The terminal 13 becomes conductive. Also, the wiring 23 has a potential VDD, or a potential higher than Vi1. A potential is supplied. When the potential VDD is supplied to the wiring 23, it accumulates in the capacitive element 102. The charged charge is released, and ultimately the threshold voltage Vth of transistor 101 is equal to the capacitance element. It is held in the sub-element 102. Therefore, during period T12, the threshold voltage Vth is maintained in the capacitive element 102. The anode of the light-emitting element 104a is at potential Vi2-Vth, and transistor 101 The gate-source voltage (Vgs101) becomes the threshold voltage Vth.

[0416] The third operation performed during period T13 will be described. During period T13, Figure 72(C As shown in the image, switches 11 and 14 are in a conductive state, and switches 12 and 14 are in a conductive state. 13 becomes non-conductive. Also, potential Vsig is supplied to wiring 21, and power is supplied to wiring 23. A potential VDD is supplied, and a potential Vi3 is supplied to wiring 25. Therefore, during period T13, The threshold voltage Vth is held in the capacitive element 102, and the voltage Vsig-Vi3 is held in the capacitive element 103. The light-emitting element 104a is held, and the anode of the light-emitting element 104a is at potential Vi3, and the gate of transistor 101 The potential of the gate is Vsig + Vth, and the gate-source voltage of transistor 101 is (V gs101) has a voltage of Vsig + Vth - Vi3. Also, switch 14 is in a non-conductive state. That's fine.

[0417] The fourth operation, which takes place during period T14, will be described. During period T14, Figure 72(D As shown in (), switches 11, 12, 13, and 14 are non-conductive. The circuit becomes open. Also, the potential VDD is supplied to wiring 23. Therefore, during period T14, The threshold voltage Vth is held in the capacitive element 102, and the voltage Vsig-Vi3 is held in the capacitive element 103. The light-emitting element 104a is held, and the anode of the light-emitting element 104a is at potential Vel, and the gate of transistor 101 The potential of the gate is Vsig + Vth - Vi3 + Vel, and the gate of transistor 101 The source-to-source voltage (Vgs101) is Vsig + Vth - Vi3.

[0418] The potential Vel is determined when current is passed through the transistor 101 to the light-emitting element 104a. This is the potential that is set. Specifically, it is set to a potential between potential VDD and potential Vcat. This will happen.

[0419] In the fourth operation described above, the gate-source voltage (Vgs101) of transistor 101 is controlled by the electric current. The voltage Vsig + Vth - Vi3 is used, and the value is obtained by taking into account the threshold voltage Vth of transistor 101. It can be set. Therefore, with the above configuration, the threshold voltage Vth of transistor 101 This prevents variations from affecting the current value supplied to the light-emitting element 104a. Alternatively, even if transistor 101 deteriorates and the threshold voltage Vth changes, the above changes will occur. This prevents the current value supplied to the optical element 104a from being affected. Therefore, the display This can reduce noise and enable high-quality labeling.

[0420] In addition, in the semiconductor device according to one aspect of the present invention, in the second operation, transistor 101 The gate is kept at potential Vi2. Due to the above operation, transistor 101 is normally on. However, even if the threshold voltage Vth has a negative value, transistor 101 In this state, the capacitance element 102 accumulates until the source potential becomes higher than the gate potential Vi2. It can release the charge that has been discharged. Therefore, in a semiconductor device according to one aspect of the present invention, Even if transistor 101 is normally on, in the fourth operation described above, The gate-source distance of transistor 101 is adjusted so that the value includes the threshold voltage Vth of transistor 101. The voltage (Vgs101) can be set.

[0421] This embodiment involves connecting one wire to various other wires, for example, wire 21, wire 22, wire 23 Wiring 24, Wiring 25, Wiring 26, Wiring 27, or wiring of another circuit 100, scan lines, This shows the case where it is connected to the gate wire, the wiring connected to the gate of a transistor, etc. This reduces the number of wires. Alternatively, one circuit 100 can be connected to another switch. Switches and other elements, for example, switch 914, switch 814, switch 14, capacitive element 10 The configuration with additions such as 5 is shown. In other words, this embodiment is part of other embodiments. Or change, add, modify, delete, apply, broaden, or broaden all of them. This corresponds to the same thing. Therefore, with respect to all or part of this embodiment, other forms of implementation may be used. It is possible to freely combine, apply, or replace parts or all of the state in the implementation. can.

[0422] (Embodiment 4) Figures 74 to 76 show examples of the arrangement of various wirings in a semiconductor device according to one aspect of the present invention. vinegar.

[0423] In Figure 74(A), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are (i, j+1) shares wiring 21 and wiring 23. Also, column i+1, row j. The eye circuit 100(i+1, j) and the circuit 100(i+1, j+1) in column i+1 and row j+1. However, they share one wiring 21 and one wiring 23.

[0424] In Figure 74(B), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) share one wiring 21. Also, circuit 100 in column i+1, row j ( Circuit 100(i+1, j+1) at i+1 column and j+1 row is a single wiring 21 They share the same. Also, circuit 100(i,j) in column i, row j and circuit 1 in column i+1, row j. 00(i+1, j) shares wiring 23. Also, circuit 10 in column i, row j+1. Circuit 100(i+1, j+1) at 0(i, j+1) and column i+1, row j+1 is a single wiring They share 23.

[0425] In Figure 74(C), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) share one wiring 21. Also, circuit 100 in column i+1, row j ( Circuit 100(i+1, j+1) at i+1 column and j+1 row is a single wiring 21 They share the same. Also, circuit 100(i,j) in column i, row j and circuit 1 in column i+1, row j. 00(i+1, j) shares wiring 23. Also, circuit 10 in column i, row j+1. Circuit 100(i+1, j+1) at 0(i, j+1) and column i+1, row j+1 is a single wiring 23 is shared. Also, circuit 100(i,j) in column i, row j and the circuit in column i, row j+1 The path 100 (i, j+1) shares wiring 23. Also, the circuit in column i+1, row j. Circuit 100(i+1, j) and circuit 100(i+1, j+1) in column i+1 and row j+1 are one They share wiring 23, and these wirings 23 are connected to each other.

[0426] In Figure 74(D), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) share one wiring 21. Also, circuit 100 in column i+1, row j ( Circuit 100(i+1, j+1) at i+1 column and j+1 row is a single wiring 21 They share the same. Also, circuit 100(i,j) in column i, row j, and circuit 10 in column i, row j+1. Circuit 100(i+1, j) at column i+1 and row j, and column i+1 and row j+1. The eye circuit 100 (i+1, j+1) shares wiring 23. It is positioned alongside wiring 21.

[0427] In Figure 74(E), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) share one wiring 21. Also, circuit 100 in column i+1, row j ( Circuit 100(i+1, j+1) at i+1 column and j+1 row is a single wiring 21 They share the same. Also, circuit 100(i,j) in column i, row j, and circuit 10 in column i, row j+1. Circuit 100(i+1, j) at column i+1 and row j, and column i+1 and row j+1. The eye circuit 100 (i+1, j+1) shares wiring 23. It is positioned so as to intersect with wiring 21.

[0428] In Figure 74(F), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) share one wiring 21. Also, circuit 100 in column i+1, row j ( Circuit 100(i+1, j+1) at i+1 column and j+1 row is a single wiring 21 They share the same. Also, circuit 100(i,j) in column i, row j, and circuit 10 in column i, row j+1. Circuit 100(i+1, j) at column i+1 and row j, and column i+1 and row j+1. The eye circuit 100 (i+1, j+1) shares two wires 23. And the above 2 The two wires 23 are arranged to cross each other and are connected to one another.

[0429] In Figure 75(A), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are (i, j+1) shares wiring 21, wiring 22, and wiring 23. Furthermore, the circuit 100(i+1, j) in column i+1 and row j+1 and the circuit 100( i+1, j+1) share one wiring 21, one wiring 22, and one wiring 23.

[0430] In Figure 75(B), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) shares wiring 21 and wiring 22. Also, column i+1, row j. The eye circuit 100(i+1, j) and the circuit 100(i+1, j+1) in column i+1 and row j+1. However, wiring 21 and wiring 22 are shared. Also, circuit 100(i) in column i, row j Circuit 100(i+1, j) in column i+1 and row j share one wiring 23. Also, circuit 100(i, j+1) in column i, row j+1 and circuit 10 in column i+1, row j+1. 0(i+1, j+1) shares the same wiring 23.

[0431] In Figure 75(C), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) shares wiring 21 and wiring 23. Also, column i+1, row j. The eye circuit 100(i+1, j) and the circuit 100(i+1, j+1) in column i+1 and row j+1. However, wiring 21 and wiring 23 are shared. Also, circuit 100(i) in column i, row j Circuit 100(i+1, j) in column i+1 and row j share one wiring 22. Also, circuit 100(i, j+1) in column i, row j+1 and circuit 10 in column i+1, row j+1. 0(i+1, j+1) shares wiring 22.

[0432] In Figure 75(D), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) share one wiring 21. Also, circuit 100 in column i+1, row j ( Circuit 100(i+1, j+1) at i+1 column and j+1 row is a single wiring 21 They share the same. Also, circuit 100(i,j) in column i, row j and circuit 1 in column i+1, row j. 00(i+1, j) shares wiring 22 and wiring 23. Also, column i j+ Circuit 100(i, j+1) in the first row and circuit 100(i+1, j+1) in column i+1 and row j+1 1) One wiring 22 and one wiring 23 are shared.

[0433] In Figure 75(E), circuit 100(i,j) in column i, row j and circuit 100 in column i, row j+1. (i, j+1) shares wiring 21 and wiring 23. Also, column i+1, row j. The eye circuit 100(i+1, j) and the circuit 100(i+1, j+1) in column i+1 and row j+1. However, wiring 21 and wiring 23 are shared. Also, circuit 100(i) in column i, row j Circuit 100(i+1, j) in column i+1 and row j is one wiring 22 and one wiring 2 3 is shared. Also, the circuit 100(i, j+1) in column i, row j+1 and column i+1, j+ The circuit 100 (i+1, j+1) in the first row shares one wire 22 and one wire 23. These wires 23 are connected to each other.

[0434] In Figure 76(A), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are (i, j+1) shares wiring 21 and wiring 22. Also, column i+1, row j. The eye circuit 100(i+1, j) and the circuit 100(i+1, j+1) in column i+1 and row j+1. However, wiring 21 and wiring 22 are shared. Also, circuit 100(i) in column i, row j , j), circuit 100(i, j+1) in column i and row j, circuit 100(i Circuit 100(i+1, j+1) in column i+1 and row j+1 is one wiring 23 They share the same space. Wiring 23 is positioned alongside wiring 21 and wiring 22.

[0435] In Figure 76(B), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) shares wiring 21 and wiring 23. Also, column i+1, row j. The eye circuit 100(i+1, j) and the circuit 100(i+1, j+1) in column i+1 and row j+1. However, wiring 21 and wiring 23 are shared. Also, circuit 100(i) in column i, row j , j), circuit 100(i, j+1) in column i and row j, circuit 100(i Circuit 100(i+1, j+1) in column i+1 and row j+1 is one wiring 22 They share the same space. Wiring 22 is positioned alongside wiring 21 and wiring 23.

[0436] In Figure 76(C), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) share one wiring 21. Also, circuit 100 in column i+1, row j ( Circuit 100(i+1, j+1) at i+1 column and j+1 row is a single wiring 21 They share the same. Also, circuit 100(i,j) in column i, row j, and circuit 10 in column i, row j+1. Circuit 100(i+1, j) at column i+1 and row j, and column i+1 and row j+1. The eye circuit 100 (i+1, j+1) shares wiring 22 and wiring 23. Wiring 22 and wiring 23 are arranged alongside wiring 21.

[0437] In Figure 76(D), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) share one wiring 21. Also, circuit 100 in column i+1, row j ( Circuit 100(i+1, j+1) at i+1 column and j+1 row is a single wiring 21 They share the same. Also, circuit 100(i,j) in column i, row j, and circuit 10 in column i, row j+1. Circuit 100(i+1, j) at column i+1 and row j, and column i+1 and row j+1. The eye circuit 100 (i+1, j+1) shares wiring 22 and wiring 23. Furthermore, wiring 22 and wiring 23 are arranged to intersect with wiring 21.

[0438] In Figure 76(E), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) share one wiring 21. Also, circuit 100 in column i+1, row j ( Circuit 100(i+1, j+1) at i+1 column and j+1 row is a single wiring 21 They share the same. Also, circuit 100(i,j) in column i, row j, and circuit 10 in column i, row j+1. Circuit 100(i+1, j) at column i+1 and row j, and column i+1 and row j+1. The eye circuit 100 (i+1, j+1) shares wiring 22 and wiring 23. Furthermore, wiring 22 is positioned to intersect with wiring 21. Also, wiring 23 is It is positioned alongside line 21.

[0439] In Figure 76(F), circuit 100(i,j) in column i, row j and circuit 10 in column i, row j+1. 0(i, j+1) shares the same wiring 21. Also, circuit 100 in column i+1, row j. Circuit 100(i+1, j+1) at (i+1, j) and column i+1, row j+1 is one wiring 2 They share 1. Also, circuit 100(i, j) in column i, row j, and circuit 1 in column i, row j+1. Circuit 00(i, j+1), i+1 column, row j, 100(i+1, j), and i+1 column, j+1 The circuit 100 (i+1, j+1) in the first row shares one wire 22 and one wire 23. Furthermore, wiring 23 is positioned to intersect with wiring 21. Also, wiring 22 is It is positioned next to wiring 21.

[0440] In Figure 76(G), the circuit 100(i,j) in column i and row j and the circuit 100 in column i and row j+1 are shown. (i, j+1) shares wiring 21 and wiring 22. Also, column i+1, row j. The eye circuit 100(i+1, j) and the circuit 100(i+1, j+1) in column i+1 and row j+1. However, wiring 21 and wiring 22 are shared. Also, circuit 100(i) in column i, row j , j), circuit 100(i, j+1) in column i and row j, circuit 100(i Circuit 100(i+1, j+1) in column i+1 and row j+1 is two wires 2 They share 3. And the two wires 23 above are arranged to cross each other, and It is connected.

[0441] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment Applicable to all or part of other embodiments, in any way. It can be done, or replaced and implemented.

[0442] (Embodiment 5) A top view of the circuit 100 shown in Figure 13(A) is shown in Figure 77 as an example.

[0443] In Figure 77, the semiconductor film 300 is the active layer of the transistor 11t and one of the capacitive elements 102. One electrode, one electrode of the capacitive element 103, the active layer of transistor 13t, transistor 1 The 4t active layer functions as the active layer of transistor 101. The semiconductor film 301 is the transistor It functions as the active layer of the converter 12t. The conductive film 302 is the other electrode of the capacitive element 102. It functions as follows. The conductive film 303 functions as the other electrode of the capacitive element 103. Conductive film 304 functions as the gate of transistor 13t.

[0444] The conductive film 305 is in contact with the wiring 22 and either the source or the drain of the transistor 12t. The conductive film 306 is connected to the source or drain of transistor 12t, It is connected to conductive film 302. Conductive film 307 is connected to conductive film 304 and wiring 33. The conductive film 308 is connected to the conductive film 303 and the source or drain of the transistor 101. One side of the input, and one side of the source or drain of transistor 13t, and transistor 14 It is connected to either the source or drain of transistor 1. The conductive film 309 is connected to transistor 1. It is connected to the other end of the 4t source or drain and to wiring 25.

[0445] In the case of Figure 13(B), the load 104 should be provided so that it is connected to the conductive film 308. Also, in the case of Figure 13(C), the light-emitting element 104a is connected to the conductive film 308. A positive electrode should be provided. Also, in the case of Figure 13(D), the electrode should be connected to the conductive film 308. The cathode of the optical element 104b should be provided.

[0446] Next, a top view of the circuit 100 shown in Figure 13(A) is shown in Figure 78 as an example.

[0447] In Figure 78, the semiconductor film 320 functions as the active layer of transistor 11t. The body film 321 functions as the active layer of transistor 12t. The semiconductor film 322 is the transistor It functions as the active layer of transistor 13t. The semiconductor film 323 is the active layer of transistor 14t. It functions as such. The semiconductor film 333 functions as the active layer of the transistor 101.

[0448] The conductive film 324 serves as the other electrode of the capacitive element 102 and as the gate of the transistor 101. It functions. Conductive film 325 functions as the other electrode of the capacitive element 103. Conductive film 326 This functions as the gate of transistor 13t.

[0449] The conductive film 327 serves as one electrode of the capacitive element 102 and one electrode of the capacitive element 103. It functions and is connected to either the source or drain of transistor 11t. Conductive film 3 28 is connected to the wiring 22 and to either the source or drain of transistor 12t. The conductive film 329 is located on the source or drain of transistor 12t, and the conductive film 3 It is connected to 24. The conductive film 330 is connected to the conductive film 326 and the wiring 33. The conductive film 331 is connected to the conductive film 325 and to the source or drain of the transistor 101. On one side, the source or drain of transistor 13t, and the source of transistor 14t It is connected to either the socket or the drain. The conductive film 332 is connected to the socket of transistor 14t. The other end of the drain or outlet is connected to the wiring 25.

[0450] In the case of Figure 13(B), the load 104 should be provided so that it is connected to the conductive film 331. Also, in the case of Figure 13(C), the light-emitting element 104a is connected to the conductive film 331. A positive electrode should be provided. Also, in the case of Figure 13(D), the electrode should be connected to the conductive film 331. The cathode of the optical element 104b should be provided.

[0451] Furthermore, an example of a cross-sectional view along the dashed line A1-A2 in Figure 78 is shown in Figure 80(A). An example of a cross-sectional view along the dashed line B1-B2 is shown in Figure 80(B). In Figure 80, the substrate 800 An insulating film 801 is formed on top of the insulating film 801, and wiring 31, conductive film 324, and conductive An electrical film 325 is formed. Also, on the wiring 31, conductive film 324, and conductive film 325 An insulating film 802 is formed.

[0452] A conductive film 327 is formed on the insulating film 802 at a position overlapping with the conductive film 325. The portion where the conductive film 325, the insulating film 802, and the conductive film 327 overlap is the capacitive element 103. It functions in this way. A conductive film 327 is formed on the insulating film 802 at a position overlapping with the conductive film 324. The portion where the conductive film 324, the insulating film 802, and the conductive film 327 overlap is a capacitance element. It functions as child 102. On the insulating film 802, at a position overlapping with the conductive film 324, semiconductor A film 333 is formed. Wiring 23 and a conductive film 331 are formed on the semiconductor film 333. It is.

[0453] Then, there is the insulating film 802, the conductive film 327 located thereon, the semiconductor film 333, the wiring 23, An insulating film 803 is formed to cover the conductive film 331.

[0454] Next, a top view of the circuit 100 shown in Figure 13(A) is shown in Figure 79 as an example. Figure 79 This refers to the shape of the portion of the wiring 23 that overlaps with the semiconductor film 333, and the semiconductor portion of the conductive film 331. The shape of the portion overlapping with the body membrane 333 differs from that shown in the top view in Figure 78. Specifically, Figure 7 In 8, the portion of the wiring 23 that overlaps with the semiconductor film 333 has a U-shape. The portion of the conductive film 331 that overlaps with the semiconductor film 333 is partially surrounded by the wiring 23. As shown, it is located inside the U-shaped curve of the wiring 23. In Figure 79, of the conductive film 331 The portion overlapping with the semiconductor film 333 has a U-shape. And the semiconductor part of the wiring 23 The portion that overlaps with film 333 is partially surrounded by conductive film 331. It is located on the inside of the U-shaped curve.

[0455] The conductive film or wiring in contact with the source or drain of transistor 101 has a U-shape. In this case, even if the area of ​​the semiconductor film 333 is small, a large channel width can be secured. Therefore, the on-current can be increased while keeping the area of ​​the semiconductor film 333 small.

[0456] Furthermore, transistors can be formed using various substrates. The type of substrate is specific. It is not limited to those. An example of such a substrate is a semiconductor substrate (for example, a single crystal substrate). Plate or silicon substrate), SOI substrate, glass substrate, quartz substrate, plastic substrate, metal substrate Plate, stainless steel substrate, substrate having stainless steel foil, tungsten Substrate, substrate having tungsten foil, flexible substrate, laminated film, fibrous Examples include paper containing the material, or a base film. An example of a glass substrate is barium borax. Examples include silicate glass, aluminoborosilicate glass, or soda-lime glass. Flexible Examples of substrates include polyethylene terephthalate (PET) and polyethylene naphthalate. Plastics such as PEN and polyethersulfone (PES), or acrylics Examples include flexible synthetic resins such as lyl. An example of a laminated film is poly Examples include propylene, polyester, vinyl, polyvinyl fluoride, or polyvinyl chloride. Examples of material films include polyester, polyamide, polyimide, and inorganic vapor-deposited films. or paper products, etc. In particular, semiconductor substrates, single crystal substrates, or SOI substrates are used. By manufacturing transistors, variations in characteristics, size, or shape are minimized. It is possible to manufacture transistors with high current capacity and small size. By constructing circuits using transistors, it is possible to reduce the power consumption of the circuit or increase the integration of the circuit. It is possible.

[0457] Furthermore, a transistor is formed using one substrate, and then the transistor is transferred to another substrate. Alternatively, the transistor may be placed on a different substrate. An example of a substrate on which the transistor is relocated. In addition to the substrates on which the aforementioned transistors can be formed, paper substrates, cellophane Substrates: stone substrates, wood substrates, fabric substrates (natural fibers (silk, cotton, linen), synthetic fibers (nylon, Polyurethane, polyester) or regenerated fibers (acetate, cupro, rayon, recycled) These include raw polyester, leather substrates, or rubber substrates. This allows for the formation of transistors with good characteristics and low power consumption. This allows for the manufacture of more durable devices, improved heat resistance, weight reduction, and thinner designs.

[0458] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment Applicable to all or part of other embodiments, in any way. It can be done, or replaced and implemented.

[0459] (Embodiment 6) In this embodiment, a transistor used in a semiconductor device according to one aspect of the present invention is Let's explain an example of its specific configuration.

[0460] The transistor shown in Figure 81(A) consists of a semiconductor film 501 and an insulating film 50 on the semiconductor film 501. 2 and a gate provided in a position that overlaps with the semiconductor film 501 with an insulating film 502 in between. It has an electrode 503 that functions by being connected to a semiconductor film 501, and conductive films 504 and 505 that are in contact with the semiconductor film 501. The semiconductor film 501 then has a first region 506 that functions as a channel-forming region and , having a second region 507 and a second region 508 which function as a source or drain. The second region 507 and the second region 508 are separated by the first region 506. Oh, in Figure 81(A), the semiconductor film 501 is divided into a first region 506 and a second region 507 and Between region 2 508 and region 3 5, there is a third region 509 and a third region 5 which function as LDD regions. This example shows the case where you have 10.

[0461] Figure 81(A) shows a transistor having a thin semiconductor film 501 as an example. However, in one aspect of the present invention, a channel formation region is formed on a bulk semiconductor substrate. A DISTA may also be used. Examples of thin-film semiconductor films include amorphous semiconductors and polycrystalline semiconductors. Conductors, single-crystal semiconductors, etc., can be used. Furthermore, the semiconductor film 501 can be silicon, gelatin, etc. Various semiconductors can be used, such as luminium, silicon germanium, and oxide semiconductors. Cut.

[0462] The transistor shown in Figure 81(B) has a first oxide insulating film 520a and a second oxide insulating film 52 It is provided on an insulating film 520 having 0b and a third oxide insulating film 520c.

[0463] The first oxide insulating film 520a and the third oxide insulating film 520c are partially dehydrated by heating. It is formed using an oxide insulating film that releases some oxygen upon heating. It is preferable to use an insulating film that contains more oxygen than satisfactorily satisfactorily. As the first oxide insulating film 520a and the third oxide insulating film 520c, silicon oxide, oxide Silicon nitride, silicon oxide nitride, gallium oxide, hafnium oxide, yttrium oxide, etc. You can use it.

[0464] The second oxide insulating film 520b is formed of an oxide insulating film that prevents the diffusion of oxygen. Examples of film 520b include aluminum oxide and aluminum oxide nitride. Aluminum oxide is aluminum oxide containing oxygen that satisfies the stoichiometric composition, or chemical Aluminum oxide (AlO) contains more oxygen than satisfactorily satisfactorily satisfactorily. x x is 3 / It is preferable that the ratio be 2 or more. Furthermore, the aluminum oxide nitride satisfies the stoichiometric composition. Some of the oxygen in the oxygen-containing aluminum oxide is replaced by nitrogen.

[0465] The transistor consists of a semiconductor film 521, an insulating film 522 on the semiconductor film 521, and an insulating film. A gate is provided in a position that overlaps with the semiconductor film 521, with film 522 sandwiched in between, and functions as a gate. It has an electrode 523 and conductive films 524 and 525 that are in contact with the semiconductor film 521. The body membrane 521 overlaps with the electrode 523, and at least a portion of it functions as a channel-forming region. A first region 526 and a second region that acts as a source or drain, flanking the first region 526. It has a region 550 and a second region 551.

[0466] For the semiconductor film 521, for example, amorphous semiconductors, polycrystalline semiconductors, single-crystal semiconductors, etc., can be used. It is possible to do so. In addition, the semiconductor film 521 contains silicon, germanium, and silicon germanium. Various semiconductors can be used, such as um and oxide semiconductors.

[0467] The transistor has a sidewall 527 having an insulating film on the side of the electrode 523. Furthermore, an insulating film 528 is provided on the upper part of the electrode 523. And the conductive film 524 and A portion of the conductive film 525 is in contact with the sidewall 527. The film 525 does not necessarily need to be in contact with the sidewall 527, but the sidewall By forming conductive films 524 and 525 so as to be in contact with 527, conductive films 524 and Even if the conductive film 525 is formed with a slight misalignment, conductive film 524 and conductive film 525 The contact area between the conductive film 5 and the semiconductor film 521 can be prevented from fluctuating. This prevents fluctuations in the transistor's on-current due to misalignment of 24 and the conductive film 525. It is possible.

[0468] Note that the insulating film 528 located above the electrode 523 is not necessarily required, By providing 528, the conductive films 524 and 525 are formed with a shifted position, and electrode 5 Even if it covers the top of 23, it prevents conductive films 524 and 525 from making electrical contact with electrode 523. It is possible to do so.

[0469] In insulating film 520, the first oxide insulating film 5 is placed on the third oxide insulating film 520c located in the lower layer. 20a and the second oxide insulating film 520b are arranged to be stacked in sequence. The first oxide insulating film 520a and the second oxide insulating film 520b are provided with openings 529. Furthermore, the semiconductor film 521 of the transistor is provided in the opening 529. Then, the first oxide insulating film 520a is in contact with the edge of the semiconductor film 521, It is provided around 521. Furthermore, the second oxide insulating film 520b is located around the first oxide insulating film. The third oxide insulating film 520 is provided around the semiconductor film 521 with 520a in between. c is located at the bottom of the semiconductor film 521.

[0470] Furthermore, if the semiconductor film 521 is an oxide semiconductor, the insulating film 520 with the above configuration is used. As a result, the oxygen released from the first oxide insulating film 520a by heating is released into the second oxide insulating film. Since it is possible to suppress the passage of 520b, the above oxygen is in the first region 526. It is efficiently supplied to the edges of the semiconductor film 521. Also, it is discharged from the third oxide insulating film 520c. The released oxygen is supplied to the bottom of the semiconductor film 521. The transistor in the region is used to etch the semiconductor film 521 into a desired shape. The semiconductor film 521 is subjected to a chipping process, exposure of its edges in a reduced pressure atmosphere, etc. At the end of 1, oxygen deficiency is likely to form due to oxygen desorption. And the oxygen deficiency is Since this becomes the migration path for the rear, if an oxygen vacancy is formed at the edge of the semiconductor film 521, parasitic chat A current is generated, which increases the off-current of the transistor. However, with the above configuration, This prevents oxygen vacancies from forming at the edges of the semiconductor film 521 in region 526, and off-electric It can reduce the flow.

[0471] Furthermore, the statement "some oxygen is removed by heating" refers to TDS (Thermal Desulfate). Analysis using thermal desorption gas spectroscopy (Heat-induced desorption gas spectroscopy) to convert oxygen atoms The calculated amount of oxygen released is 1.0 × 10 18atoms / cm 3 Above, preferably 3.0× 10 20 atoms / cm 3 It is said that it is above.

[0472] Hereinafter, the method for measuring the amount of oxygen desorption in terms of oxygen atoms by TDS analysis will be described. .

[0473] The amount of gas desorbed during TDS analysis is proportional to the integral value of the spectrum. Therefore, the amount of gas released can be calculated from the integral value of the spectrum of the insulating film and the ratio to the reference value of the standard sample. The reference value of the standard sample is the ratio of the atomic density to the integral value of the spectrum of a sample containing a predetermined atom.

[0474] For example, from the TDS analysis results of a silicon wafer containing hydrogen with a predetermined density as a standard sample and the TDS analysis results of the insulating film, the amount of desorbed oxygen molecules (N O2 ) of the insulating film can be obtained by the following formula 1. Although there is CH3OH with a mass number of 32, the possibility of its existence in the insulating film is low. Therefore, all the spectra detected with a mass number of 32 obtained by TDS analysis are assumed to be derived from oxygen molecules. Also, for oxygen molecules containing oxygen atoms with a mass number of 17 and oxygen atoms with a mass number of 18, which are isotopes of oxygen atoms, since their abundance ratios in nature are extremely small values, they are assumed not to exist.

[0475] N O2 =N H2 / S H2 ×S O2 ×α (Formula 1)

[0476] N H2 is the value obtained by converting the hydrogen molecules desorbed from the standard sample into density. S H2 is the standard sample This is the integral value of the spectrum obtained when the sample is analyzed using TDS. The reference value for the standard sample is N H2 / S H2 Let's assume that. S O2 α is the integral value of the spectrum obtained when the insulating film is analyzed by TDS. This is a coefficient that affects the spectral intensity in TDS analysis. For details of Equation 1, see Special Refer to Publication No. 6-275697. The amount of oxygen desorption in the above insulating film is determined by Electronic Science Co., Ltd. Using the EMD-WA1000S / W thermostatic desorption analyzer manufactured by [Company Name], a 1×1 standard sample was used. 0 16 atoms / cm 2 The measurement is performed using a silicon wafer containing hydrogen atoms.

[0477] Furthermore, in TDS analysis, some oxygen is detected as oxygen atoms. Oxygen molecules and oxygen atoms The ratio of these can be calculated from the ionization rate of oxygen molecules. Note that α above represents the oxygen component. Because it includes the ionization rate of the oxygen atom, by evaluating the amount of oxygen molecule released, the amount of oxygen atom desorbed can be determined. Even if they are present, it can still be estimated.

[0478] Note N O2 This is the amount of oxygen molecules that are released. In insulating films, when converted to oxygen atoms, The amount of oxygen released is twice the amount of oxygen molecules released.

[0479] In the above configuration, the insulating film that releases oxygen upon heating is silicon oxide (S) with excess oxygen. iO X (X>2)) is also acceptable. Silicon oxide (SiO2) has an excess of oxygen. X (X>2)) This refers to a material that contains more than twice the number of oxygen atoms per unit volume compared to the number of silicon atoms. The number of silicon atoms and oxygen atoms per unit volume was measured using the Rutherford backscattering method. It is a value.

[0480] The transistor shown in Figure 81(C) has a first oxide insulating film 530a and a second oxide insulating film 5 It is provided on an insulating film 530 having 30b.

[0481] The first oxide insulating film 530a is formed using an oxide insulating film from which some oxygen is removed by heating. As an oxide insulating film in which some oxygen is removed by heating, an acid that satisfies the stoichiometric composition is used. It is preferable to use an insulating film that contains more oxygen than the element. The first oxide insulating film 530a and Then, silicon oxide, silicon oxide nitride, silicon oxide nitride, gallium oxide, hafni oxide Materials such as yttrium oxide can be used.

[0482] The second oxide insulating film 530b is formed of an oxide insulating film that prevents the diffusion of oxygen. Examples of film 530b include aluminum oxide and aluminum oxide nitride. Aluminum oxide is aluminum oxide containing oxygen that satisfies the stoichiometric composition, or chemical Aluminum oxide (AlO) contains more oxygen than satisfactorily satisfactorily satisfactorily. x x is 3 / It is preferable that the ratio be 2 or more. Furthermore, the aluminum oxide nitride satisfies the stoichiometric composition. Some of the oxygen in the oxygen-containing aluminum oxide is replaced by nitrogen.

[0483] The transistor consists of a semiconductor film 531 located on an insulating film 530 and an insulating film on the semiconductor film 531. A film 532 and a gate are provided in a position that overlaps with the semiconductor film 531 with the insulating film 532 in between. Electrode 533 that functions as a terminal, and conductive film 534 and conductive film 5 connected to semiconductor film 531 It has 35. The semiconductor film 531 overlaps with the electrode 533 and at least a portion of it is channel-shaped. A first region 536 that functions as a constituent region, and a first region that functions as a source or drain It has a second region 537 and a second region 538 flanking region 536.

[0484] For the semiconductor film 531, for example, amorphous semiconductors, polycrystalline semiconductors, single-crystal semiconductors, etc., can be used. It is possible to do so. In addition, the semiconductor film 531 contains silicon, germanium, and silicon germanium. Various semiconductors can be used, such as um and oxide semiconductors.

[0485] Furthermore, the transistor has a sidewall 539 having an insulating film on the side of the electrode 533. An insulating film 540 is provided on the upper part of the electrode 533. And a conductive film 534 and the conductive film 535 are partially in contact with the sidewall 539. Conductive film 53 4 and the conductive film 535 do not necessarily need to be in contact with the sidewall 539, but side By forming conductive films 534 and 535 in contact with wall 539, the conductive film Even if the positions of 534 and the conductive film 535 are formed with some misalignment, the conductive film 534 and the conductive film This prevents fluctuations in the contact area between the film 535 and the semiconductor film 531. Therefore, Changes in the on-current of the transistor due to misalignment of conductive films 534 and 535. It can prevent movement.

[0486] Note that the insulating film 540 located above the electrode 533 is not necessarily required, By providing 540, the conductive films 534 and 535 are formed with a shifted position, and electrode 5 Even if it covers the top of 33, it prevents the conductive films 534 and 535 from making electrical contact with the electrode 533. It is possible to do so.

[0487] Then, the insulating film 530 has a second oxide insulating film 530b surrounding the first oxide insulating film 530a. A first acid is provided. The semiconductor film 531 is in the first region 536. In contact with the insulating film 530a, the first oxidation insulating film is in contact with the second region 537 and the second region 538. It is in contact with the edge film 530a and the second oxide insulating film 530b.

[0488] Furthermore, if the semiconductor film 531 is an oxide semiconductor, the above configuration allows heating to produce the first acid This suppresses the passage of oxygen released from the oxide insulating film 530a through the second oxide insulating film 530b. Therefore, the oxygen can be effective at the edge of the semiconductor film 531 in the first region 536. It is supplied efficiently. Furthermore, transistors having an oxide semiconductor in the channel formation region are semi- Etching process for etching the conductive film 531 into a desired shape, edge of the semiconductor film 531 Exposure to a reduced-pressure atmosphere in the area may cause oxygen desorption at the edges of the semiconductor film 531. Oxygen vacancies are easily formed. And since oxygen vacancies become carrier transport pathways, semiconductors When an oxygen deficiency is formed at the end of membrane 531, a parasitic channel is created, thereby transient The off-current of the first region increases. However, in one aspect of the present invention, the above configuration allows the first region 53 This prevents oxygen vacancies from forming at the edges of the semiconductor film 531 in 6, thereby reducing the off-current. It is possible.

[0489] Furthermore, impurities such as water or hydrogen, which act as electron donors, are reduced, and acid Purified oxide semiconductors (purified Oxi) are achieved by reducing elemental defects. A de Semiconductor is an i-type (intrinsic semiconductor) or very close to an i-type. Therefore, transistors using the above-mentioned oxide semiconductor have the characteristic of having a remarkably low off-current. It has the following characteristics. Furthermore, the band gap of the oxide semiconductor is 2 eV or more, preferably 2.5 eV. More preferably, the voltage is 3 eV or higher. The concentration of impurities such as water or hydrogen is sufficiently reduced. Furthermore, by reducing oxygen deficiency, a highly purified oxide semiconductor film is used. This allows the transistor's off-current to be reduced.

[0490] Specifically, a transistor using a highly purified oxide semiconductor film in the channel formation region The low current can be proven through various experiments. For example, if the channel width is 1 × 10⁻⁶ 6 Even with a μm element and a channel length of 10 μm, the voltage between the source electrode and the drain electrode ( When the drain voltage is in the range of 1V to 10V, the off-current is measured by the semiconductor parameter analyzer. Below Isa's measurement limit, i.e., 1 × 10⁻⁶ -13 This allows us to obtain the characteristic of being A or less. In this case, the off-current normalized by the transistor's channel width is 100 Hz A / μm or less. It can be seen that by connecting a capacitive element and a transistor, current flows into the capacitive element or capacitance. The off-current is measured using a circuit that controls the charge flowing out of a quantitative element with the transistor. The measurement was performed. In this measurement, the highly purified oxide semiconductor film was used as the channel shape of the transistor. Used in the region, the off-power of the transistor can be determined from the change in the amount of charge per unit time of the capacitive element. The current was measured. As a result, the voltage between the source and drain electrodes of the transistor was 3V. In addition, it was found that an even lower off-current of several tens of yA / μm could be obtained. Therefore, In transistors using a highly purified oxide semiconductor film in the channel formation region, the off-current is This is significantly lower compared to transistors using crystalline silicon.

[0491] Furthermore, as the oxide semiconductor, it is preferable to use an oxide containing In or Zn. More preferably, an oxide containing In and Ga, or an oxide containing In and Zn. It is preferable to use oxides. To make the oxide semiconductor film type i (intrinsic), dehydration is performed as described later. Alternatively, dehydrogenation is effective. Also, the electrical properties of transistors using oxide semiconductors are improved. In addition to those, it also contains gallium (Ga) as a stabilizer to reduce rattle. It is preferable that the stabilizer contains tin (Sn). It is preferable to include hafnium (Hf) as a stabilizer. It is preferable to include aluminum (Al) as a stabilizer. It is preferable that it contains conium (Zr).

[0492] Also, other stabilizers include lanthanides such as lanthanum (La) and cerium ( Ce, praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), hol Mium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Lu It may contain one or more types of tecium (Lu).

[0493] For example, oxide semiconductors include indium oxide, tin oxide, zinc oxide, and the oxide of binary metals. These are In-Zn oxides, Sn-Zn oxides, Al-Zn oxides, and Zn-Mg oxides. Oxides, Sn-Mg oxides, In-Mg oxides, In-Ga oxides, ternary metals In-Ga-Zn oxides (also written as IGZO), In-Al-Zn oxides Oxides, In-Sn-Zn oxides, Sn-Ga-Zn oxides, Al-Ga-Zn acids oxides, Sn-Al-Zn oxides, In-Hf-Zn oxides, In-La-Zn oxides Materials, In-Ce-Zn oxides, In-Pr-Zn oxides, In-Nd-Zn oxides In-Sm-Zn oxides, In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides, In-Dy-Zn oxides, In-Ho-Zn oxides, I n-Er-Zn oxides, In-Tm-Zn oxides, In-Yb-Zn oxides, In -Lu-Zn ​​oxides, In-Sn-Ga-Zn oxides which are oxides of quaternary metals, I n-Hf-Ga-Zn oxides, In-Al-Ga-Zn oxides, In-Sn-Al- Using Zn-based oxides, In-Sn-Hf-Zn-based oxides, and In-Hf-Al-Zn-based oxides It is possible for it to be present. Furthermore, the oxide semiconductor described above may also contain silicon.

[0494] For example, an In-Ga-Zn oxide is an oxide containing In, Ga, and Zn. This is about taste, and the ratio of In, Ga, and Zn is not important. Also, metal elements other than In, Ga, and Zn are not considered. It may contain. In-Ga-Zn oxides have sufficiently high resistance in the absence of an electric field and are off-electric. It is possible to significantly reduce the flow rate, and it also has high mobility.

[0495] Oxide semiconductor films can exist in various states, such as single crystal, polycrystalline (also called polycrystalline), or amorphous. The oxide semiconductor film is CAAC-OS (C Axis Aligned Crystals A talline oxide semiconductor film is preferred.

[0496] CAAC-OS films are neither perfectly single crystals nor perfectly amorphous. This refers to oxide semiconductors with a crystalline-amorphous multiphase structure having crystalline portions ranging from several nanometers to tens of nanometers in size within an amorphous phase. It is a body membrane. Amorphous and crystalline regions in the CAAC-OS film as seen by a ron Microscope. The boundaries are not clear. Also, the CAAC-OS film has grain boundaries (also known as grain boundaries). (This cannot be confirmed.) Because the CAAC-OS film does not have grain boundaries, electron transfer caused by grain boundaries cannot be confirmed. A decrease in mobility is less likely to occur.

[0497] The crystalline portion contained in the CAAC-OS film has a c-axis that is the normal vector to the surface on which the CAAC-OS film is formed. Aligned in a direction parallel to the normal vector of the plane or surface, and triangular when viewed from a direction perpendicular to the ab plane. Having a shape or hexagonal atomic arrangement, the metal atoms are layered or when viewed from a direction perpendicular to the c-axis. Metal atoms and oxygen atoms are arranged in layers. The crystalline regions are separated by the a-axis. The orientation of the b-axis may be different. In this specification, when it is simply described as vertical, 85 The range of ° to 95° is also included. Furthermore, when simply described as parallel, -5° is used. This also includes the range of 5° or less.

[0498] Furthermore, the proportion of amorphous and crystalline portions within the CAAC-OS film does not need to be uniform. For example, when growing crystals from the surface side of a CAAC-OS film, the surface of the CAAC-OS film The proportion of crystalline material is higher in the vicinity of the surface being formed, while the proportion of amorphous material is higher in the vicinity of the surface being formed. This can happen. Also, by adding impurities to the CAAC-OS film, the impurities can be added. In the added region, the crystalline parts may become amorphous.

[0499] The c-axis of the crystalline portion contained in the CAAC-OS film is the normal vector to the surface on which the CAAC-OS film is formed. Because it aligns in a direction parallel to the normal vector of the surface or the material, the shape of the CAAC-OS film (formed The direction of the c-axis between crystalline parts differs depending on the cross-sectional shape of the face or surface. There is. Note that the direction of the c-axis of the crystalline portion is the direction of the surface on which the CAAC-OS film was formed. The direction is parallel to the normal vector or the surface normal vector. The crystalline portion is formed during film formation or It is formed by performing crystallization treatments such as heat treatment after the film is made.

[0500] By using CAAC-OS film, the electrical characteristics of transistors when irradiated with visible light or ultraviolet light can be controlled. Because the variation in performance is reduced, a highly reliable transistor can be obtained.

[0501] CAAC-OS films are used, for example, for polycrystalline oxide semiconductor sputtering targets. The film is deposited using a sputtering method. Ions are directed onto the sputtering target. Upon collision, the crystalline region contained in the sputtering target cleaves from the ab plane, and a -The sputtering particles are exfoliated as flat or pellet-shaped sputtering particles having a surface parallel to the -b surface. In this case, the flat sputtering particles maintain their crystalline state and form a base By reaching the plate, the CAAC-OS film can be deposited.

[0502] Furthermore, it is preferable to apply the following conditions for forming the CAAC-OS film.

[0503] By reducing the inclusion of impurities during film formation, it is possible to suppress the disruption of the crystalline state due to impurities. For example, the concentration of impurities present in the processing room (such as hydrogen, water, carbon dioxide, and nitrogen) It would be good to reduce it. Also, it would be good to reduce the impurity concentration in the film formation gas. Specifically, the dew point is A film-forming gas with a temperature of -80°C or lower, preferably -100°C or lower, is used.

[0504] Furthermore, by increasing the substrate heating temperature during film deposition, the sputtering particles can be prevented from migrating after reaching the substrate. A reaction occurs. Specifically, the substrate heating temperature is preferably between 100°C and 740°C. The film is deposited at a temperature between 200°C and 500°C. By increasing the substrate heating temperature during film deposition, the flat When plate-shaped sputtering particles reach the substrate, migration occurs on the substrate. The flat surface of the sputtered particles adheres to the substrate.

[0505] Furthermore, by increasing the oxygen content in the deposition gas and optimizing the power, plasma damage during film deposition can be reduced. It is preferable to reduce this. The oxygen content in the film-forming gas is 30% by volume or more, preferably 100% by volume. Let the product be %.

[0506] As an example of a target for sputtering, an In-Ga-Zn-O compound target is used. The following is an example.

[0507] InO X powder, GaO Y Powder and ZnO Z The powder is mixed in a predetermined number of moles and then subjected to pressure treatment. By heat treatment at temperatures between 1000°C and 1500°C, polycrystalline In-Ga -Zn-O compounds are used as the target. X, Y, and Z are arbitrary positive numbers. The given molar ratio is, for example, InO X powder, GaO Y Powder and ZnO Z The powder is 2 The ratios are 2:1, 8:4:3, 3:1:1, 1:1:1, 4:2:3, or 3:1:2. The type of powder and the molar ratio in which they are mixed will be determined by the sputtering target being prepared. You can adjust it as needed depending on the situation.

[0508] For example, oxide semiconductor films include In (indium), Ga (gallium), and Zn ( It can be formed by sputtering using a target containing zinc. When depositing a Zn-based oxide semiconductor film by sputtering, preferably, the atomic ratio is In :Ga:Zn=1:1:1, 4:2:3, 3:1:2, 1:1:2, 2:1:3, or A target of an In-Ga-Zn oxide system, represented by the atomic ratio 3:1:4, is used. To deposit an oxide semiconductor film using an In-Ga-Zn-based oxide target having the following properties. This makes it easier for polycrystalline or CAAC-OS to form. Also, In, Ga, and Zn The relative density of the included target is 90% or more and 100% or less, preferably 95% or more and 100% or less. It is complete. By using a target with a high relative density, the deposited oxide semiconductor film is dense. It forms a dense membrane.

[0509] Furthermore, when using an In-Zn-based oxide material as the oxide semiconductor, the target used is The atomic ratio of the metal elements is In:Zn = 50:1 to 1:2 (converted to a mole ratio of In2 O3:ZnO = 25:1 to 1:4), preferably In:Zn = 20:1 to 1:1 (number of moles) Converted to a ratio, In2O3:ZnO = 10:1 to 1:2), and more preferably In:Zn =15:1~1.5:1 (Converted to a mole ratio of In2O3:ZnO = 15:2~3:4) ) For example, a target used in the formation of an oxide semiconductor film which is an In-Zn oxide. When the atomic ratio is In:Zn:O=X:Y:Z, assume Z>1.5X+Y. By keeping the rate within the above range, it is possible to improve mobility.

[0510] Specifically, the oxide semiconductor film is processed by holding the substrate in a processing chamber that is kept under reduced pressure, and then processing... While removing residual moisture in the laboratory, sputtered gas from which hydrogen and moisture have been removed is introduced, and the above-mentioned It can be formed using a film-forming agent. During film formation, the substrate temperature should be between 100°C and 600°C. Alternatively, the temperature can be between 200°C and 400°C. By depositing the film while heating the substrate... This allows for a reduction in the impurity concentration contained in the deposited oxide semiconductor film. Damage caused by tarring is reduced. To remove residual moisture in the processing chamber, an adsorption type It is preferable to use a vacuum pump. For example, a cryopump, ion pump, or titanium pump. It is preferable to use a breech pump. Furthermore, a turbopump is preferred as the exhaust means. A cold trap may be added to the system. The treatment chamber is evacuated using a cryopump. Then, for example, hydrogen atoms, water (H2O) and other compounds containing hydrogen atoms (more preferably carbon Because compounds containing elementary atoms are also exhausted, the oxide semiconductor film deposited in the processing chamber contains The concentration of impurities can be reduced.

[0511] Furthermore, in oxide semiconductor films formed by sputtering, etc., there may be water or hydrogen as an impurity. It may contain a large amount of (hydroxyl groups). Water or hydrogen forms donor levels. Because it is easily oxidized, it is an impurity for oxide semiconductors. Therefore, in one aspect of the present invention, To reduce impurities such as water or hydrogen in a semiconductor film (dehydration or dehydrogenation) For oxide semiconductor films, under reduced pressure, under an inert gas atmosphere such as nitrogen or a rare gas, acid Under a gas atmosphere or in ultra-dry air (CRDS (cavity ring-down laser spectroscopy) The moisture content measured using a dew point meter of the ) type is 20 ppm or less (equivalent to a dew point of -55°C). The heat treatment is performed in an atmosphere (preferably 1 ppm or less, preferably 10 ppb or less of air) To administer.

[0512] By applying heat treatment to the oxide semiconductor film, water or hydrogen is removed from the oxide semiconductor film. This is possible. Specifically, a substrate at 250°C to 750°C, preferably 400°C or higher. The heat treatment should be performed at a temperature below the strain point. For example, 500°C for 3 to 6 minutes. It should be done to a certain extent. If the RTA method is used for heat treatment, dehydration or dehydrogenation can be performed in a short time. Therefore, processing can be performed even at temperatures exceeding the strain point of the glass substrate.

[0513] Furthermore, the above heat treatment causes oxygen to be removed from the oxide semiconductor film, and oxygen remains in the oxide semiconductor film. Defects may be formed. Therefore, in one aspect of the present invention, the g An insulating film containing oxygen is used as the insulating film, such as a galvanic insulating film. After forming the film, heat treatment is applied to supply oxygen from the insulating film to the oxide semiconductor film. This configuration reduces the oxygen vacancies that serve as donors and is contained in the oxide semiconductor film. The oxide semiconductor can satisfy the stoichiometric composition. It is preferable that the oxygen content exceeds a certain amount. As a result, the oxide semiconductor film is i-type This allows for closer contact, reducing variations in the electrical characteristics of transistors due to oxygen deficiency, and reducing electrical This allows for improved performance.

[0514] Furthermore, the heat treatment to supply oxygen to the oxide semiconductor film is performed using nitrogen, ultra-dry air, or dilute air. In a gaseous atmosphere (such as argon or helium), preferably at a temperature of 200°C to 400°C. The following steps should be performed at a temperature (for example, between 250°C and 350°C). The gas used should have a water content of 20 ppm. The following is preferably 1 ppm or less, and more preferably 10 ppb or less.

[0515] The transistor shown in Figure 82(A) is a bottom-gate type with a channel etch structure.

[0516] The transistor shown in Figure 82(A) has a gate electrode 602 formed on an insulating surface. The gate insulating film 603 on the gate electrode 602, and the gate insulating film 603 A semiconductor film 604 overlapping the electrode 602, and a conductive film 60 formed on the semiconductor film 604. 5. It has a conductive film 606. Furthermore, the transistor has a semiconductor film 604 and a conductive film 605. The insulating film 607 formed on the conductive film 606 may also be included as a component.

[0517] Note that the transistor shown in Figure 82(A) is insulated at the position where it overlaps with the semiconductor film 604. The film 607 may further have a back gate electrode formed on it.

[0518] The transistor shown in Figure 82(B) is a bottom-gate type with a channel protection structure.

[0519] The transistor shown in Figure 82(B) has a gate electrode 612 formed on an insulating surface. And, the gate insulating film 613 on the gate electrode ...

Claims

[Claim 1] A first conductive film having a region disposed on an insulating surface and functioning as either a source electrode or a drain electrode, A second conductive film having a region disposed on the insulating surface and functioning as the other of a source electrode or a drain electrode, An oxide semiconductor film having a region disposed on the first conductive film, a region disposed on the second conductive film, and a transistor channel formation region, A first insulating film having a region disposed on the first conductive film, a region disposed on the second conductive film, and a region disposed on the oxide semiconductor film, A third conductive film having a region disposed on the first conductive film via the first insulating film, a region disposed on the second conductive film via the first insulating film, and a region disposed on the oxide semiconductor film via the first insulating film, and having a function as the gate electrode of the transistor, A second insulating film having a region disposed on the third conductive film and a region in contact with the upper surface of the first insulating film, Transistor.

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