Chamber, method and apparatus for generating atomic radicals using UV light

Abstract

The present disclosure relates to a chamber, method, apparatus, and related components for processing a substrate. In one or more implementations, atomic radicals are generated using ultraviolet light, and the atomic radicals are used to process a substrate. In one implementation, a chamber applicable for use in semiconductor manufacturing includes an interior space at least partially defined by one or more sidewalls, one or more substrate supports disposed within the interior space, one or more transfer openings, a gas line fluidly connecting the interior space from outside the interior space, and an ultraviolet (UV) unit. The UV unit includes one or more UV light sources configured to generate UV light having a wavelength within a range of 170 nm to 254 nm.

Description

[Technical Field]

[0001]

[0001] Embodiments of the present disclosure generally relate to chambers, methods, apparatus, and related components for processing substrates. In one or more implementations, atomic radicals are generated using ultraviolet light, and the atomic radicals are used to process the substrate. [Background technology]

[0002]

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated circuit devices and microdevices. Substrates may undergo various processing operations during which they may encounter defects. For example, prior to an epitaxial deposition process, the substrate may be cleaned to remove a native oxide layer, which may otherwise interfere with the epitaxial deposition process. Cleaning may generate particles on the substrate, which may interfere with other processing operations or device performance. Efforts to address these issues may be complex, expensive, and involve increased space usage.

[0003]

[0003] Therefore, there is a need for chambers, apparatus, and methods that facilitate reduced particle generation and improved device performance in a cost-effective, modular, and simple manner. Summary of the Invention

[0004]

[0004] Embodiments of the present disclosure generally relate to chambers, methods, apparatus, and related components for processing substrates. In one or more implementations, atomic radicals are generated using ultraviolet light, and the atomic radicals are used to process the substrate.

[0005] In one implementation, a chamber applicable for use in semiconductor manufacturing includes one or more sidewalls, an interior space at least partially defined by the one or more sidewalls, one or more substrate supports disposed within the interior space, one or more transfer openings formed in the one or more sidewalls, a gas line fluidly connecting the interior space from outside the interior space to the interior space, and an ultraviolet (UV) unit, wherein the UV unit includes one or more UV light sources configured to generate UV light having a wavelength in a range of 170 nm to 254 nm.

[0006] In one implementation, an apparatus applicable for use in semiconductor manufacturing includes a gas line at least partially formed from a UV-transmitting material, the gas line having a flow space, and an ultraviolet (UV) unit including a line opening, the UV unit configured to be at least partially disposed around the gas line such that the gas line extends through the UV unit. The UV unit includes one or more arc-shaped light bulbs configured to be at least partially disposed around the gas line, and one or more UV light sources disposed within the one or more light bulbs. The one or more UV light sources generate UV light having a wavelength in a range of 170 nm to 400 nm.

[0007] In one implementation, a method for processing a substrate includes flowing an inert gas toward an interior volume of a chamber and generating ultraviolet (UV) light toward the inert gas. The UV light has a wavelength within a range of 170 nm to 400 nm. The method also includes generating atomic radicals of the inert gas and treating a surface of the substrate with the atomic radicals while the substrate is positioned within the interior volume of the chamber.

[0008]

[0008] So that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly summarized above may be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered as limiting the scope of the present disclosure, which may also admit of other equally effective embodiments. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic top plan view of a processing system according to one implementation. [Figure 2] FIG. 1 is a schematic cross-sectional side view of a load lock chamber according to one implementation. [Figure 3] FIG. 1 is a schematic top view of a UV unit positioned above a substrate, according to one embodiment. [Figure 4] FIG. 1 is a schematic cross-sectional side view of a load lock chamber according to one implementation. [Figure 5] FIG. 1 is a schematic cross-sectional side view of a load lock chamber according to one implementation. [Figure 6] FIG. 1 is a schematic cross-sectional side view of a load lock chamber according to one implementation. [Figure 7] 7 is a schematic cross-sectional view of the UV unit shown in FIG. 6 taken along cross section 7-7 shown in FIG. 6 according to one implementation. [Figure 8] 1 is a schematic cross-sectional side view of a processing chamber according to one implementation. [Figure 9] 1 is a schematic block diagram of a method for processing a substrate according to one implementation. [Figure 10] FIG. 1 is a schematic cross-sectional side view of a load lock chamber according to one implementation. Modes for carrying out the invention

[0010]

[0019] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011]

[0020] FIELD OF THE DISCLOSURE Embodiments of the present disclosure generally relate to chambers, methods, apparatus, and related components for processing substrates. In one or more implementations, atomic radicals are generated using ultraviolet light, and the atomic radicals are used to process the substrate.

[0012]

[0021] It is contemplated that the present disclosure contemplates that terms such as "couple," "connection," "connection," and "coupled" may include, but are not limited to, welding, fusion, melt bonding, interference fit, and / or fastening (e.g., using bolts, threaded connections, pins, and / or screws). It is contemplated that the present disclosure contemplates that terms such as "couple," "connection," "connection," and "coupled" may include, but are not limited to, integral formation. It is contemplated that the present disclosure contemplates that terms such as "couple," "connection," "connection," and "coupled" may include, but are not limited to, direct connection and / or indirect connection (e.g., indirect connection via components such as links, blocks, and / or frames).

[0013]

[0022] 1 is a schematic top plan view of a processing system 100 according to one implementation. The processing system 100 includes one or more substrate load lock chambers 122, a vacuum-tight processing platform 104, a factory interface 102, and a controller 144. The substrate load lock chambers 122 may be a load lock chamber. In one embodiment, the processing chamber 100 may be a CENTRA® integrated processing system commercially available from Applied Materials, Inc., Santa Clara, California. It is contemplated that other processing systems (including those from other manufacturers) may be adapted to benefit from the present disclosure.

[0014]

[0023] The platform 104 includes multiple processing chambers 110, 112, 128, 120, 132 and one or more substrate load lock chambers 122 coupled to a vacuum substrate transfer chamber 136. Two substrate load lock chambers 122 are shown in Figure 1. The factory interface 102 is connected to the transfer chamber 136 by the substrate load lock chambers 122.

[0015]

[0024] In one embodiment, the factory interface 102 includes at least one docking station 108 and at least one factory interface robot 114 to facilitate substrate transfer. The docking station 108 is configured to receive one or more front-opening unified pods (FOUPs). Two FOUPS 106A, 106B are shown in the implementation of FIG. 1 . The factory interface robot 114, having a blade 116 located at one end of the robot 114, is configured to transfer one or more substrates from the FOUPs 106A, 106B through a substrate load lock chamber 122 to the processing platform 104 for processing. The transferred substrates can be at least temporarily stored in the substrate load lock chamber 122.

[0016]

[0025] Each of the substrate load lock chambers 122 has a first port that connects to the factory interface 102 and a second port that connects to the transfer chamber 136. The substrate load lock chambers 122 are coupled to a pressure control system (not shown) that depressurizes and vents the substrate load lock chambers 122 to facilitate passage of substrates between the vacuum environment of the transfer chamber 136 and the substantially ambient (e.g., atmospheric) environment of the factory interface 102.

[0017]

[0026] The transfer chamber 136 has a vacuum robot 130 disposed therein. The vacuum robot 130 has a blade 134 capable of transferring substrates 124 between the substrate load lock chamber 122 and the processing chambers 110, 112, 132, 128, 120.

[0018]

[0027] A controller 144 is coupled to the processing system 100. The controller 144 controls the operation of the system 100 using direct control of the processing chambers 110, 112, 132, 128, 120 of the system 100, or alternatively, by controlling a computer (or controller) associated with the processing chambers 110, 112, 132, 128, 120 and the system 100. In operation, the controller 144 enables data collection and feedback from each chamber and the controller 144 to optimize the performance of the system 100.

[0019]

[0028] The controller 144 is used to control the operation of processes and methods, such as those described herein (e.g., the operation of method 900 described below). The controller 144 includes a central processing unit (CPU) 138, a memory 140 containing instructions, and support circuits 142 for the CPU. The controller 144 controls various items directly or via other computers and / or controllers. In one or more embodiments, the controller 144 is communicatively coupled to a dedicated controller, with the controller 144 functioning as a central controller.

[0020]

[0029] The controller 144 is any form of general-purpose computer processor used in industrial settings to control various substrate processing chambers and equipment, as well as sub-processors thereon or therein. The memory 140, or non-transitory computer-readable medium, is one or more of readily available memory (e.g., random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage. The support circuits 142 of the controller 144 are coupled to the CPU 138 (processor) for supporting the CPU 138. The support circuits 142 may include cache, power supplies, clock circuits, input / output circuits, , and subsystems, etc. Operating parameters (e.g., UV light power, inert gas temperature, inert gas pressure, native oxide content, particle concentration, and / or atomic particle concentration) and operations are stored in memory 140 as one or more software routines that are executed or invoked to transform controller 144 into a special-purpose controller and control the operation of the various systems / chambers / units / modules described herein. When executed by CPU 138, one or more software routines transform CPU 138 into a special-purpose computer. The software routines may also be stored and / or executed by a second controller (not shown) located remotely from system 100.

[0021]

[0030] The controller 144 is configured to perform any of the operations described herein. When executed, the instructions stored in the memory cause one or more of the operations of the method 900 to be performed.

[0022]

[0031] The various operations described herein may be performed automatically using the controller 144, or certain operations may be performed automatically and / or manually by a user.

[0023]

[0032] The controller 144 is configured to adjust outputs to the control unit of the system 100 based on sensor readings, a system model, and stored readings and calculations. By way of example, one or more operational parameters can be measured by one or more sensors positioned along the system 100. The controller 144 includes embedded software and correction algorithms for calibrating the measurements. The controller 144 can include one or more machine learning and / or artificial intelligence algorithms that estimate optimized parameters for one or more deposition operations, cleaning operations, etching operations, and / or one or more atomic radical treatment operations. The one or more machine learning and / or artificial intelligence algorithms can use, for example, regression models (e.g., linear regression models) or clustering techniques to estimate the optimized parameters. The algorithms can be unsupervised or supervised.

[0024]

[0033] One or more machine learning and / or artificial intelligence algorithms may optimize the operational parameters used in connection with the operations described herein.

[0025]

[0034] FIG. 2 is a schematic cross-sectional side view of one of the substrate load lock chambers 122 shown in FIG. 1 , according to one implementation. The substrate load lock chamber 122 includes a chamber body 202, a first carrier holder 204B, a second carrier holder 204A, and a temperature control pedestal 240. The first carrier holder 204B and the second carrier holder 204A each include a substrate 124 supported by a carrier 206. The chamber body 202 may be made from a single material, such as aluminum. The chamber body 202 includes a first sidewall 208, a second sidewall 210, side walls 242 (only one shown in FIG. 2 ), a top 214, and a bottom 216 that define a chamber volume 218. A window (not shown) may be provided in the top 214 of the chamber body and may be formed at least partially from quartz or one or more UV-transmitting materials, such as UV-transparent glass (for fused silica glass).

[0026]

[0035] The pressure in the chamber volume 218 can be controlled to allow the substrate load lock chamber 122 to be evacuated to substantially match the environment of the transfer chamber 136 and vented to substantially match the environment of the factory interface 102. The chamber body 202 includes one or more vent passages 230 and pump passages 232. Due to the location of the vent passages 230 and pump passages 232, flow within the load lock chamber 122 during venting and evacuation is substantially laminar and configured to minimize particulate contamination.

[0027]

[0036] The pump passage 232 is coupled to a vacuum pump 236. The vacuum pump 236 has low vibration, thereby minimizing disturbance to the substrates 124 positioned on the holders 204B, 204A within the substrate load lock chamber 122, while reducing or minimizing the fluid path between the substrate load lock chamber 122 and the pump 236 to generally less than 3 feet, thereby promoting pump-down efficiency and time.

[0028]

[0037] A first loading port 238 is disposed in the first sidewall 208 of the chamber body 202 to allow the substrate 124 to be transferred between the substrate load lock chamber 122 and another device (e.g., the factory interface 102). A first slit valve 244 selectively seals the first loading port 238 to isolate the substrate load lock chamber 122 from the factory interface 102. A second loading port 239 is disposed in the second sidewall 210 of the chamber body 202 to allow the substrate 124 to be transferred between the load lock chamber 122 and another device (e.g., the transfer chamber 136). A second slit valve 246, substantially similar to the first slit valve 244, selectively seals the second loading port 239 to isolate the load lock chamber 122 from the vacuum environment of the transfer chamber 136.

[0029]

[0038] The first carrier holder 204B is concentrically coupled to (e.g., stacked on top of) the second carrier holder 204A, which is disposed above the chamber bottom 216. The carrier holders 204B, 204A are generally mounted on supports 220 coupled to a shaft 282 that extends through the bottom 216 of the chamber body 202. Typically, each carrier holder 204B, 204A is configured to hold one substrate positioned on a respective carrier 206. The shaft 282 is coupled to a lift mechanism 296 disposed outside the load lock chamber 122. The lift mechanism 296 controls the elevation of the carrier holders 204B and 204A within the chamber body 202. The bellows 284 is connected between the support 220 and the bottom 216 of the chamber body 202 and is disposed around the shaft 282 to provide a flexible seal between the second carrier holder 204A and the bottom 216, thereby preventing leakage from or into the chamber body 202 and facilitating the raising and lowering of the carrier holders 204B, 204A without compromising the pressure within the load lock chamber 122.

[0030]

[0039] In one or more embodiments, the first carrier holder 204B is utilized to hold unprocessed substrates on the first carrier 206 from the factory interface 102, while the second carrier holder 204A is utilized to hold processed substrates (e.g., etched substrates) on the second carrier 206 returning from the transfer chamber 136. It is contemplated in the present disclosure that each carrier holder and carrier pair can be considered to be at least part of a substrate support. The present disclosure contemplates the use of other substrate supports within the load lock chamber 122.

[0031]

[0040] An ultraviolet light (UV) unit 270 coupled to the load lock chamber 122 is positioned on the upper portion 214 of the chamber body 202. The UV unit 270 includes a unit housing 271, one or more light bulbs 299 disposed within the unit housing 271, and one or more UV light sources 298 disposed within the one or more light bulbs 299. A pair of end caps 297 are coupled to the respective ends of the light bulbs 299 and the UV light sources 298. The end caps 297 may be electrically connected to one or more power sources to provide power to the UV light sources 298. The end caps 297 are coupled to the unit housing 271 and support the light bulbs 299 and the UV light sources 298.

[0032]

[0041] A gas line 289 is fluidly connected to the interior space 218 from outside the interior space 218. The gas line is fluidly connected to an inert gas source 290. In one or more embodiments, the gas line 289 is at least partially formed from a ceramic and / or metallic material. In one or more embodiments, the gas line 289 is at least partially formed from aluminum, stainless steel, and / or aluminum oxide (e.g., Al2O3). In one or more embodiments, one or more sections (e.g., some or all) of the gas line 289 through which atomic radicals are not flowing are formed from one or more metallic materials (e.g., aluminum and / or stainless steel). In one or more embodiments, one or more sections (e.g., some or all) of the gas line 289 through which atomic radicals are not flowing are formed from one or more ceramic materials (e.g., Al2O3). In the implementation shown in FIG. 2, atomic radicals are not flowing through the gas line 289. The gas line 289 may include, for example, one or more conduits (e.g., pipes), one or more hoses (e.g., flexible hoses), and / or one or more flanges. One or more flow valves may be disposed along the gas line 289.

[0033]

[0042] A gas line 289 supplies an inert gas G1 (supplied from an inert gas supply 290) to the UV unit 270. Optionally, a heater 291 is disposed along the gas line 289 to heat the inert gas G1 before it flows into the interior space 218. In one or more embodiments, the heater 291 can heat the inert gas G1 to anneal one or more substrates 124 within the interior space 218. The gas line 289 is fluidly coupled to the interior space 218 via the UV unit 270 in the implementation shown in FIG. 2 .

[0034]

[0043] In the UV unit 270, one or more UV light sources 298 direct UV light toward the inert gas G1 while the inert gas G1 flows through one or more light bulbs 299. The UV energy intensity interacts with the inert gas G1, breaking bonds in the inert gas G1 molecules and generating atomic radicals R1 of the inert gas G1. The atomic radicals R1 may be generated within the unit housing 271 and / or the interior space 218. The atomic radicals R1 then interact with one or more surfaces of one or more substrates 124 to process the one or more surfaces of the one or more substrates 124. The atomic radicals R1 can be embedded into one or more layers of the one or more substrates 124, thereby improving subsequent processing effectiveness and reducing particle contamination of the one or more substrates 124. As an example, the incorporated atomic radicals R1 can promote effective etching to remove a native oxide layer in one of the multiple processing chambers 110, 112, 132, 128, 120 (e.g., an etching chamber). The UV unit 270 facilitates reliable, effective, inexpensive, and efficient generation of atomic radicals R1 of an inert gas G1. In one or more embodiments, the inert gas G1 includes hydrogen (H2), and the atomic radicals are atomic hydrogen radicals (H * ). The present disclosure contemplates the use of other gases (e.g., nitrogen (N), nitric oxide (NO), ammonia gas (NH), water vapor (HO), and / or oxygen (O)) to generate other atomic radicals (e.g., atomic nitrogen radicals and / or atomic oxygen radicals). The present disclosure contemplates that multiple gases may be used in place of inert gas G1 and / or that gases other than inert gases (e.g., reactive gases) may be used in place of inert gas G1.

[0035]

[0044] Once the substrate has moved into the second loading port 239 and into the transfer chamber 136, the substrate 124 may be transferred to one of the multiple processing chambers 110, 112, 132, 128, 120 for processing.

[0036]

[0045] 2, atomic radical R1 can flow through one or more flow openings 287 in flow wall 288 and into interior space 218. Flow wall 288 can be removed such that interior unit space 295 defined by unit housing 271 is open to interior space 218.

[0037]

[0046] 2 shows the inert gas G1 entering the interior space 218 through the ceiling of the interior space. It is envisioned in this disclosure that the inert gas G1 can enter the interior space 218 through the sides of the interior space 218.

[0038]

[0047] 3 is a schematic top view of the UV unit 270 shown in FIG. 2 positioned above the substrate 124, according to one implementation. One or more UV light sources 298 (shown) are configured to generate UV light having a wavelength in the range of 170 nm to 400 nm, e.g., in the range of 170 nm to 340 nm. In one or more embodiments, one or more bulbs 299 (shown) are transparent to at least 95% of the UV light. In one or more embodiments, one or more bulbs 299 are formed from quartz. In one or more embodiments, the wavelength is in the range of 170 nm to 254 nm. In one or more embodiments, the UV light has an intensity of 10 mW / cm 2 ~10W / cm 2In one or more embodiments, the wavelength is in the range of 170 nm to 254 nm. In one or more embodiments, the wavelength is greater than 170 nm and less than 400 nm. In one or more embodiments, the wavelength is greater than 170 nm and less than 254 nm. In one or more embodiments, the wavelength is in the range of 172 nm to 254 nm. In one or more embodiments, the wavelength is less than 254 nm. The UV unit 270 may include, for example, an excimer lamp (see, for example, FIG. 3), a low-pressure mercury lamp (see, for example, FIG. 5), a UV laser (see, for example, FIG. 10), and / or other suitable UV light generator. The UV light source 298 may include, for example, a filament (e.g., a coiled filament). The bulb 299 may be filled with one or more gases, such as one or more noble gases.

[0039]

[0048] The bulbs 299 are spaced apart from one another by a distance D1. In one or more embodiments, the distance D1 is at least 5 mm. In one or more embodiments, the distance D1 is within a range of 5 mm to 5 cm. The distance D1 can be predetermined. The distance D1 allows the gas G1 to flow between the bulbs 299, facilitating the gas G1 to be exposed to UV light and generate atomic radicals R1. As shown in FIG. 3, one or more substrates 124 are positioned below the bulbs 299. FIG. 3 shows seven bulbs 299 arranged in a single column (having seven rows). The present disclosure contemplates that other configurations can be used. For example, multiple columns of bulbs can be used. As another example, the number of rows can be different from the seven shown. In one or more embodiments, one or more UV reflectors 253 are used to reflect the UV light toward the substrate 124. The one or more UV reflectors 253 can include a mirror, such as a mirror-like coating. The one or more UV reflectors 253 may be coated or otherwise disposed or formed on one or more interior surfaces of the unit housing 271 (e.g., the upper interior surface 251 and / or the side surfaces 252 of the unit housing 271 shown in FIG. 2). For example, the one or more UV reflectors 253 may be smoothed interior surfaces or surfaces of the unit housing 271. The one or more UV reflectors 253 may be positioned above, below, and / or around the UV light source 298 to reflect UV light toward the surface of the substrate 124.

[0040]

[0049] 4 is a schematic cross-sectional view of a load lock chamber according to one implementation. The load lock chamber 422 is similar to the load lock chamber 122 shown in FIG. 2, including one or more aspects, features, components, operations, and / or characteristics thereof. The load lock chamber 422 can be used in place of one or more of the load lock chambers 122 shown in FIG. 1.

[0041]

[0050] 4 , the UV unit 270 includes one or more unit connectors 471 that extend inwardly into the interior space 218 relative to the upper portion 214. The UV unit 270 is positioned within the interior space 218, with the UV unit 270 suspended from the upper portion 214 using the one or more unit connectors 471. The one or more unit connectors 471 are coupled to the end cap 297. The one or more unit connectors 471 may be part of a unit housing that at least partially (e.g., entirely) surrounds the bulb 299.

[0042]

[0051] 4, the majority of the radicals R1 are generated in the interior space 218 (e.g., between the bulbs 299 and / or between the bulbs 299 and the top substrate 124). The UV light generated using the UV light source 298 may be directed at least partially toward the top substrate 124. In one or more embodiments, the distance D2 between the bulbs 299 and the top substrate 124 is in the range of 1 mm to 10 cm during generation of the radicals R1 and during treatment of one or more substrates 124 with the radicals R1. It is contemplated in the present disclosure that the distance D2 may vary depending on process parameters. The distance D2 can be changed by moving the top substrate 124 upward toward or away from the UV unit 270 (e.g., by raising or lowering the carrier 206), by moving the UV unit 270 toward or away from the top substrate 124, or by both moving the top substrate 124 and the UV unit 270. As shown in Figure 4, one or more UV reflectors 253 can be positioned (e.g., on an inner surface of 214) to reflect UV light toward the top surface of the top substrate 124. The UV reflectors 253 can be positioned on one or more inner surfaces of one or more unit connectors 471.

[0043]

[0052] 5 is a schematic cross-sectional view of a load lock chamber 522 according to one implementation. The load lock chamber 522 is similar to the load lock chamber 122 shown in FIG. 2, including one or more aspects, features, components, operations, and / or characteristics thereof. The load lock chamber 522 can be used in place of one or more of the load lock chambers 122 shown in FIG. 1.

[0044]

[0053] 5, one or more UV light sources 598 (shown) are disposed within one or more bulbs 599 (shown) that are coupled to the unit housing 271 using one or more unit connectors 597 (shown). A plate 501 (e.g., a window) is disposed between the unit interior space 295 and the interior space 218. The plate 501 is UV transparent to allow UV light to pass into the interior space 218 and may be formed of UV transparent glass (e.g., quartz). In one or more embodiments, the plate 501 is transparent to at least 95% of the UV light. An outer ledge 502 of the plate 501 is supported by the top 214 and / or the unit housing 271.

[0045]

[0054] The gas line 289 is fluidly connected to the first sidewall 208 and supplies the inert gas G1 through the first sidewall 208 to the interior space 218. The inert gas G1 interacts with the UV light in the interior space 218, forming radicals R1 in the interior space 218. The radicals R1 then treat the one or more substrates 124.

[0046]

[0055] As discussed below in connection with the subject matter combinations of this specification, the present disclosure contemplates that UV light source 598, bulb 599, and unit connector 597 may be substituted for UV light source 298, bulb 299, and end cap 297 shown in FIG. 2.

[0047]

[0056] 5 shows the inert gas G1 entering the interior space 218 through the side of the interior space. In this disclosure, it is assumed that the inert gas G1 can enter the interior space 218 through the ceiling of the interior space 218.

[0048]

[0057] 6 is a schematic cross-sectional side view of a load lock chamber 622 according to one implementation. The load lock chamber 622 is similar to the load lock chamber 122 shown in FIG. 2, including one or more aspects, features, components, operations, and / or characteristics thereof. The load lock chamber 622 can be used in place of one or more of the load lock chambers 122 shown in FIG. 1.

[0049]

[0058] Gas line 289 includes a UV-transmitting section 610 disposed inside UV unit 270 (e.g., inside unit housing 671) and a second section 611. In the illustrated implementation, second section 611 is the downstream section. In one or more embodiments, UV-transmitting section 610 is formed from UV-transmitting glass (e.g., quartz or fused silica glass). Second section 611 includes a material that is metallic or ceramic (e.g., one or more of the metallic or ceramic materials described above (e.g., aluminum, stainless steel, and / or aluminum oxide (e.g., Al2O3))). Second section 611 can be formed from a material that is metallic or ceramic, or can have an inner coating that is metallic or ceramic.

[0050]

[0059] 6, the interior unit space 295 is a portion of the line opening of the UV unit 270. The UV unit 270 is at least partially disposed around the gas line 289, which extends through the UV unit 270 (e.g., through the unit housing 671 and through one or more arc-shaped bulbs 699 of the UV unit 270).

[0051]

[0060] One or more arc-shaped bulbs 699 are disposed at least partially around the gas line 289, and one or more UV light sources 698 are disposed within the one or more arc-shaped bulbs 699. In the implementation shown in Figure 6, the one or more arc-shaped bulbs 699 are one or more tubes that spiral around the gas line 289 (e.g., the first section 611 of the gas line 289) in a spiral pattern.

[0052]

[0061] The radicals R1 are generated in the flow space 608 (eg, the interior space) of the first section 611 of the gas line 289, which delivers the radicals R1 to the interior space 218.

[0053]

[0062] Figure 7 is a schematic cross-sectional view of the UV unit 270 shown in Figure 6, taken along section 7-7 shown in Figure 6, according to one implementation. The cross-sectional view shown in Figure 7 is perpendicular to the cross-sectional view shown in Figure 6.

[0054]

[0063] 6 and 7, the one or more arc-shaped bulbs 699 include multiple spiral portions that surround the periphery (e.g., perimeter) of the gas line 289. The one or more arc-shaped bulbs 699 may be a single arc-shaped bulb (as shown in FIG. 6) or multiple arc-shaped bulbs. The one or more UV light sources 698 may be a single UV light source (as shown in FIG. 6) or multiple UV light sources.

[0055]

[0064] The radial distance D3 between the one or more arc-shaped bulbs 699 and the first section 610 is in the range of 1 mm to 15 mm. In one or more embodiments, the multiple arc-shaped bulbs 699 (eight shown in FIG. 7 ) and the multiple UV light sources (eight shown in FIG. 7 ) each spiral around the gas line 289 in a helical pattern (as shown for the single arc-shaped bulb 699 in FIG. 6 ). Although eight arc-shaped bulbs 699 are shown in FIG. 7 , fewer or more may be used. As shown in FIG. 6 , each of the arc-shaped bulbs 699 spirals around the UV-transmitting first section 610 of the gas line 289. In the implementation shown in FIG. 7 , each arc-shaped bulb 699 is a spiral tube. The diameter ID1 of each arc-shaped bulb 699 is in the range of 5 mm to 30 mm. The pitch P1 (shown in FIG. 6) between the peaks of each arc-shaped bulb 699 is within the range of 5 mm to 100 mm.

[0056]

[0065] 6 , the unit housing 671 encloses (e.g., surrounds) the first section 611 and the one or more arc-shaped bulbs 699. The unit housing 671 is removably coupled to the upper portion 214 and / or the gas line 289. The unit housing 671 may be removably coupled to other components of the processing system. In the implementation shown in FIG. 6 , the unit housing 671 is removably coupled to the upper portion 214 using one or more legs 672 (e.g., brackets, such as L-shaped brackets). Fasteners may fasten the one or more legs 672 to the upper portion 214 and / or the one or more legs 672 may rest on the upper portion 214. Other configurations are also contemplated.

[0057]

[0066] 8 is a schematic cross-sectional side view of a processing chamber 800 according to one implementation. In one or more embodiments, the processing chamber 800 is configured to perform a pre-clean process.

[0058]

[0067] In one or more embodiments, the processing chamber 800 uses hydrogen fluoride (HF) and water (HO) to etch away native oxide (e.g., interfacial oxygen) from the substrate. The processing chamber 800 can, for example, selectively etch silicon oxide (e.g., SiO) relative to silicon nitride (SiN).

[0059]

[0068] The processing chamber 800 may be a pre-clean chamber available from Applied Materials, Inc., Santa Clara, California. The processing chamber 800 includes a chamber body 802, a lid assembly 804, and a substrate support assembly 806. The lid assembly 804 is disposed on top of the chamber body 802, and the substrate support assembly 806 is disposed at least partially within the chamber body 802. A vacuum system is used to remove gases from the processing chamber 800. The vacuum system includes a vacuum pump 808 coupled to a vacuum port 810 disposed within the chamber body 802. A pumping ring 822 is disposed within the chamber body 802. The pumping ring 822 has a plurality of exhaust ports 826 that provide fluid communication between the interior of the processing chamber 800 and the vacuum port 810 for gas exhaust.

[0060]

[0069] The lid assembly 804 includes multiple stacked components configured to supply gas to a processing region 812 within the chamber 800. The lid assembly 804 is fluidly connected to a UV unit 270 and / or a second gas source 816 (shown according to the implementation shown in FIGS. 6 and 7 ). One or more gases from an inert gas supply 290 are introduced into the lid assembly 804 through a top port 818. One or more gases from the second gas source 816 are introduced into the lid assembly 804 through a side port 820. The inert gas supply 290 is fluidly connected to the top port 818 through a gas line 289. The gas line 289 includes a spiral tube 610 that emits UV light. The UV unit 270 is used to generate radicals R1, which are supplied to the processing region 812 through the top port 818 and the lid assembly 804.

[0061]

[0070] In one or more embodiments, the third gas source can provide at least a first portion of the process gas (e.g., a reactive gas). In one or more embodiments, the second gas source 816 can provide a second portion of the process gas (e.g., a vapor). In one or more embodiments, one or more purge gases and / or carrier gases can be further provided to the processing region 812 from the gas source 290, the second gas source 816, or another gas source.

[0062]

[0071] The lid assembly 804 includes a showerhead 824 positioned above the processing region 812 through which gases are introduced into the processing region 812. The showerhead 824 may include one or more additional plates (e.g., a blocker plate or face plate) positioned above the plates shown in FIG. 8. Each plate of the showerhead 824 may have a plurality of apertures therethrough. These apertures connect the gas regions above and below the plate. In one or more embodiments, the showerhead 824 may be heated. In one or more embodiments, gases may be mixed within or above the showerhead 824 during heating. In one or more embodiments, the showerhead 824 may be heated to approximately 190°C, while the substrate being processed is at approximately 10°C.

[0063]

[0072] 8 , the showerhead 824 is a dual-channel showerhead having a first set of channels 828 and a second set of channels 830. The first set of channels 828 provide fluid communication above and below the plane of the showerhead 824 for gases from a top port 818 to enter the processing region 812. The second set of channels 830 provides fluid communication with a side port 820 for gases from a second gas source 816 to enter the processing region 812. A dual-channel showerhead can be advantageous for improving mixing of various gases coming from the inert gas source 290, the second gas source 816, and / or a third gas source.

[0064]

[0073] The substrate support assembly 806 (also called a "pedestal") includes a support 832 (also called a "puck") for supporting the substrate 801 thereon during processing, and a stem 836 coupled to the support 832.

[0065]

[0074] The support 832 includes an upper surface having a flat or substantially flat substrate support surface 833 (also referred to as a "substrate support region" or "substrate contact surface" of the support 832). In one or more embodiments, the substrate support surface 833 may extend a radial distance R1 from a center C1 of the support 832.

[0066]

[0075] 8, the support 832 includes two independent temperature control zones (referred to as "dual zones") that control the substrate temperature for center-to-edge process uniformity and regulation. In the implementation shown in FIG. 8, the support 832 has an inner zone 832i and an outer zone 832o that surrounds the inner zone 832i. In one or more embodiments, the support 832 can have more than two independent temperature control zones (referred to as "multi-zones").

[0067]

[0076] The support 832 is coupled to an actuator 834 by a stem 836 that extends through a centrally located opening formed in the bottom of the chamber body 802. The actuator 834 is flexibly sealed to the chamber body 802 by a bellows 838 that prevents vacuum leakage around the stem 836. The actuator 834 enables the substrate support 832 to move vertically within the chamber body 802 between a processing position and a loading position. The loading position is slightly below a substrate opening 840 formed in a sidewall of the chamber body 802.

[0068]

[0077] The processing chamber 800 further includes a cryogenic temperature kit 842 for lowering the temperature of the substrate being processed, which can improve oxide removal (e.g., native oxide removal) selectivity compared to other materials, such as low-k dielectric materials and silicon nitride (e.g., SiN), among others. In one or more embodiments, the temperature of the substrate being processed and / or the temperature of the support 832 may be lowered by about −30° C. to about 10° C. The cryogenic temperature kit 842 provides a continuous flow of cryogenic coolant to the support 832, thereby cooling the support 832 to a desired temperature. In one or more embodiments, the cryogenic coolant may include a perfluorinated inert polyether fluid. In the implementation shown in FIG. 8 , the cryogenic coolant is supplied to the inner zone 832i and the outer zone 832o of the support 832 through inner coolant channels 844i and outer coolant channels 844o, respectively. The coolant channels are depicted schematically in FIG. 8 and may have different arrangements than those shown. For example, each coolant channel may be in the form of a loop. The controller 144 is connected to the processing chamber 800 (also shown in FIG. 1).

[0069]

[0078] FIG. 9 is a schematic block diagram of a method for processing a substrate according to one implementation.

[0070]

[0079] Operation 901 involves flowing an inert gas toward the interior volume of the chamber (eg, through gas line 289).

[0071]

[0080] In one or more embodiments, the inert gas is hydrogen. In one or more embodiments, the inert gas is oxygen or nitrogen. In one or more embodiments, the inert gas includes a combination of hydrogen, nitrogen, oxygen, and / or one or more other gases.

[0072]

[0081] Operation 903 includes generating ultraviolet (UV) light toward the inert gas. In one or more embodiments, the UV light has a wavelength as described above.

[0073]

[0082] Operation 905 includes generating atomic radicals of the inert gas. The UV light interacts with the inert gas to break bonds between atoms and generate atomic radicals. In one or more embodiments, the UV light source has a power in a range of 100 watts (W) to 600 W. In one or more embodiments, the power is in a range of 200 W to 500 W. In one or more embodiments, the output of the UV light is 200 W. In one or more embodiments, the output of the UV light is 500 W. The intensity of the light exposed to the inert gas can be controlled in two ways. The first method is to control the voltage power, which affects the output of the light. The second method is the distance of light transmission and / or light reflection (which can be affected by distance D2 and / or distance D3 described above). In one or more embodiments, the inert gas flows at a temperature equal to or greater than ambient temperature (e.g., room temperature). In one or more embodiments, the inert gas flows at a temperature in a range of 95 degrees Celsius to 105 degrees Celsius. In one or more embodiments, the temperature is about 100 degrees Celsius. Other temperature values ​​are contemplated. The substrate may be at a substrate temperature of, for example, 300 degrees Celsius or less. Other temperature values ​​are contemplated.

[0074]

[0083] Operation 907 includes treating a surface of the substrate with atomic radicals while the substrate is positioned within the interior volume of the chamber. The hydrogen radicals contact the surface of the substrate and are embedded in the substrate. The hydrogen radicals treat the surface of the substrate.

[0075]

[0084] 10 is a schematic cross-sectional view of a load lock chamber 1022 according to one implementation. The load lock chamber 1022 is similar to the load lock chamber 522 shown in FIG. 5, including one or more aspects, features, components, operations, and / or characteristics thereof. The load lock chamber 1022 can be used in place of one or more of the load lock chambers 122 shown in FIG. 1.

[0076]

[0085] In the implementation shown in FIG. 10 , the one or more UV light sources include one or more UV lasers 1099 (several shown) disposed within one or more UV laser modules 1098 (several shown). The UV laser modules 1098 are coupled to the upper portion 214. An optical element 1001 (e.g., a lens or beam expander) is disposed between each UV laser module 1098 and the interior space 218. The one or more optical elements 1001 may be disposed within an opening formed in the upper portion 214. The UV laser modules 1098 may each include a module housing removably coupled to the one or more optical elements 1001 and / or the upper portion 214. The one or more optical elements 1001 are UV-transmissive, allowing UV light to enter the interior space 218, and may be formed of glass (e.g., quartz or fused silica glass). In one or more embodiments, the one or more optical elements 1001 transmit at least 95% of the UV light.

[0077]

[0086] The UV laser 1099, UV laser module 1098, and optical element 1001 may be located inside or outside the load lock chamber 1022. For example, the UV laser 1099, UV laser module 1098, and one or more optical elements 1001 may be located outside of the interior space 218 (as shown in FIG. 10 ) or within the interior space 218. It is contemplated in the present disclosure that the optical element 1001 may be positioned within and / or attached to a window (e.g., plate 501 shown in FIG. 5 ).

[0078]

[0087] The gas line 289 is fluidly connected to the first sidewall 208 and supplies the inert gas G1 through the first sidewall 208 to the interior space 218. The inert gas G1 interacts with the UV light provided by the UV laser 1099 in the interior space 218 to form radicals R1 within the interior space 218. The radicals R1 then process the one or more substrates 124.

[0079]

[0088] As discussed below in connection with the subject matter combinations of this specification, the present disclosure contemplates that the UV laser module 1098 and UV laser 1099 may be used in addition to, in place of, or in lieu of the UV light source 298, the bulb 299, the end cap 297, the unit connector 597, the UV light source 598, and / or one or more bulbs 599.

[0080]

[0089] The implementation shown in FIG. 10 illustrates the inert gas G1 entering the interior space 218 through the side of the interior space. It is assumed in the present disclosure that the inert gas G1 can enter the interior space 218 through the ceiling of the interior space 218. Advantages of the present disclosure include minimizing the space required for processing because substrates can be processed for particle contamination within existing chambers in a processing system; cost savings; modularity and ease in re-installing various chambers performing various operations (e.g., various processing operations); reduced contamination; and reduced particle generation. For example, the present disclosure can save the cost of acquiring additional chambers for processing. As another example, due to the modularity of the implementation, implementations of the present disclosure can be installed in various chambers used in manufacturing without significant modifications to one or more chambers. As a further example, the present disclosure is simple, can reduce exposure to contaminants, and does not necessarily require a corrosive plasma to generate radicals. The present disclosure is also versatile due to its functionality for high-pressure and low-pressure chambers. As a further example, the UV units described herein (e.g., UV units positioned outside the chamber, such as the implementation of UV unit 270 shown in FIG. 6) are modular and can be used to retrofit various chambers at the operating site, such that modifications to the chamber are reduced.

[0081]

[0090] The use of UV light in the wavelength range of 170 nm to 254 nm promotes exemplary advantages. For example, this wavelength range reliably, effectively, inexpensively, and efficiently promotes molecular bond breaking to generate radicals while reducing impacts on substrates and other components (e.g., particle generation, unintended etching and / or melting, contamination, and interference with device performance). This range also reduces interference with other processing operations (e.g., cleaning, etching, or deposition).

[0082]

[0091] While this disclosure describes UV units used in connection with load lock chambers and processing (e.g., pre-clean) chambers, it is contemplated that the UV units described herein can be used in connection with a variety of other chambers (e.g., epitaxial deposition chambers and / or plasma chambers).

[0083]

[0092] It is contemplated that one or more aspects disclosed herein may be combined. By way of example, one or more aspects, features, components, operations, and characteristics of the processing system 100, the load lock chamber 122, the inert gas source 290, the heater 291, the gas line 289, the various implementations of the UV unit 270, the load lock chamber 422, the load lock chamber 522, the plate 501, the load lock chamber 622, the processing chamber 800, and / or the method 900 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the advantages described above.

[0084]

[0093] While the above description is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A chamber applicable for use in semiconductor manufacturing, comprising: one or more side walls; an interior space at least partially defined by said one or more sidewalls; one or more substrate supports disposed within the interior space; one or more transfer openings formed in said one or more side walls; a gas line fluidly connecting the interior space from outside the interior space; and an ultraviolet (UV) unit comprising one or more UV light sources configured to generate UV light having a wavelength in the range of 170 nm to 254 nm; A chamber comprising:

2. 10. The chamber of claim 1, wherein the UV unit is positioned outside the interior space and facing the gas line, and the one or more UV light sources are configured to generate the UV light toward a flow space of the gas line.

3. The chamber of claim 2 , wherein the gas line extends through the UV unit such that gas in the flow space is exposed to the UV light before entering the interior space.

4. 4. The chamber of claim 3, wherein the gas line comprises a UV-transparent section disposed within the UV unit and a downstream section between the UV-transparent section and the interior space, the downstream section comprising a material that is metal or ceramic.

5. The chamber of claim 2 , further comprising a UV-transmitting plate between the UV unit and the interior space, the UV-transmitting plate at least partially defining a ceiling of the interior space.

6. 10. The chamber of claim 1, further comprising a heater disposed along the gas line to heat gas in the gas line before entering the interior space.

7. 10. The chamber of claim 1, wherein the one or more UV light sources are arranged in cylindrical bulbs oriented parallel to one another, the bulbs spaced apart a distance to allow gas to flow through spaces between the bulbs.

8. 10. The chamber of claim 1, wherein the one or more UV light sources are disposed within one or more light bulbs, and the one or more light bulbs of the UV unit are arc-shaped and disposed at least partially around the gas line.

9. 9. The chamber of claim 8, wherein the one or more bulbs are spirally arranged around the gas line in a helical pattern.

10. 10. The chamber of claim 1, wherein the one or more UV light sources comprise one or more UV lasers.

11. 1. An apparatus applicable for use in semiconductor manufacturing, comprising: a gas line formed at least partially from a UV-transmitting material, the gas line comprising a flow space; an ultraviolet (UV) unit with a line opening configured to be positioned at least partially around the gas line such that the gas line extends through the UV unit, the UV unit including one or more arc-shaped bulbs configured to be positioned at least partially around the gas line; and one or more UV light sources disposed within the one or more arc-shaped bulbs and configured to generate UV light, the UV light having a wavelength in a range of 170 nm to 400 nm; A device comprising:

12. 12. The apparatus of claim 11, wherein the gas line comprises a UV-transparent section disposed within the UV unit and a second section, the second section comprising a material that is metal or ceramic.

13. 12. The apparatus of claim 11, wherein the one or more arc-shaped bulbs are spirally arranged around the gas line in a helical pattern.

14. The apparatus of claim 11 , wherein the one or more arc-shaped bulbs include a plurality of spiral sections that surround a circumference of the gas line.

15. 1. A method of processing a substrate, comprising: flowing an inert gas toward an interior space of the chamber; generating ultraviolet (UV) light toward the inert gas, the UV light having a wavelength in a range of 170 nm to 400 nm; generating atomic radicals of the inert gas; treating a surface of the substrate with atomic radicals while the substrate is positioned within the interior space of the chamber; A method comprising:

16. The method of claim 15 , wherein the UV light is directed radially toward the inert gas.

17. 16. The method of claim 15, wherein the inert gas flows through a ceiling or a side of the interior space and the inert gas is exposed to the UV light within the interior space.

18. 16. The method of claim 15, wherein the inert gas is exposed to the UV light in a gas line outside the interior space and the atomic radicals flow through a ceiling or side of the interior space.

19. The inert gas is hydrogen (H ２ ) and the atomic radical is an atomic hydrogen radical (H ＊ 16. The method of claim 15, wherein

20. the wavelength is greater than 170 nm and less than 254 nm; the UV light has a power output in the range of 100 watts to 600 watts; 16. The method of claim 15, wherein the inert gas flows at a temperature above room temperature.

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