Substrate support carrier having multiple ceramic discs

Abstract

The substrate support carrier includes an electrostatic chuck (ESC) assembly including an upper ceramic disk having a recess formed in a lower surface of the upper ceramic disk, a lower ceramic disk having a hole extending through the lower ceramic disk, an upper bonding layer interposed between the lower surface of the upper ceramic disk and the upper surface of the bottom ceramic disk, and a porous plug within at least one of the recess of the upper ceramic disk and the hole in the bottom ceramic disk; a temperature control base; and a lower bonding layer interposed between the lower surface of the bottom ceramic disk and the upper surface of the temperature control base.

Description

[Technical Field]

[0001] TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate generally to substrate support carriers having porous features embedded therein for use in substrate processing chambers, and more particularly to substrate support carriers having a plurality of ceramic discs. [Background technology]

[0002] Electrostatic chucks are utilized in a variety of manufacturing and processing steps. In semiconductor manufacturing, electrostatic chucks are used to support substrates in processing chambers. Currently, electrostatic chucks use a single ceramic disk with an embedded clamping electrode and resistive heater. Some electrostatic chucks also incorporate a press-fit or adhesively bonded porous plug within the ceramic disk. This design utilizes mechanical means to secure the porous plug within the single ceramic disk, for example, by holding the porous plug within a dielectric sleeve with a press-fit or interference fit. Providing such a fit requires careful machining. Further complications arise to prevent undesirable cracking of the ceramic disk during manufacturing or operation of the electrostatic chuck.

[0003]

[0003] Therefore, there is a need for an electrostatic chuck that can be manufactured and operated with reduced complexity. Summary of the Invention

[0004] An embodiment of the present disclosure provides a substrate support carrier for use in a processing chamber, the substrate support carrier including an electrostatic chuck (ESC) assembly including an upper ceramic disk having a recess formed in a lower surface of the upper ceramic disk, a lower ceramic disk having a hole extending through the lower ceramic disk, an upper bonding layer interposed between the lower surface of the upper ceramic disk and the upper surface of the bottom ceramic disk, and a porous plug within at least one of the recess of the upper ceramic disk and the hole in the bottom ceramic disk, a temperature control base, and a lower bonding layer interposed between the lower surface of the bottom ceramic disk and the upper surface of the temperature control base.

[0005]

[0005] Embodiments of the present disclosure also provide a substrate support carrier for use in a processing chamber, the substrate support carrier including an electrostatic chuck (ESC) assembly including an upper ceramic disk, a bottom ceramic disk, and an upper bonding layer interposed between a lower surface of the upper ceramic disk and an upper surface of the bottom ceramic disk, a temperature control base, a lower bonding layer interposed between a lower surface of the bottom ceramic disk and an upper surface of the temperature control base, and bonding edge protection features disposed on an edge of at least one of the upper and lower bonding layers.

[0006]

[0006] Embodiments of the present disclosure further provide an electrostatic chuck (ESC) assembly including a top ceramic disk having a clamping electrode embedded therein, a bottom ceramic disk having a plurality of resistive heaters embedded therein, a bonding layer interposed between a lower surface of the top ceramic disk and an upper surface of the bottom ceramic disk, a first electrical feedthrough connected to the clamping electrode, a plurality of second electrical feedthroughs each connected to one of the plurality of resistive heaters and routed within the bottom ceramic disk to the lower surface of the bottom ceramic disk, and a plurality of electrical terminals brazed to the lower surface of the bottom ceramic disk.

[0007]

[0007] In order that the features of the present disclosure as described above may be realized and understood in detail, the present disclosure summarized above will be more particularly described with reference to embodiments thereof as illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings are merely illustrative of embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure, which may also admit of other equally effective embodiments. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view of an exemplary substrate support carrier for use in a processing chamber. [Figure 2] 1A, 1B, and 1C are cross-sectional views of a porous plug with an in-situ sleeve according to one or more embodiments. [Figure 3A-E] FIG. 1 is a cross-sectional view of a portion of an electrostatic chuck (ESC) assembly according to one or more embodiments. [Figure 3F-H] FIG. 1 is a cross-sectional view of a portion of an electrostatic chuck (ESC) assembly according to one or more embodiments. [Figure 3I-N] FIG. 1 is a cross-sectional view of a portion of an electrostatic chuck (ESC) assembly according to one or more embodiments. [Figure 3O-Y] FIG. 1 is a cross-sectional view of a portion of an electrostatic chuck (ESC) assembly according to one or more embodiments. [Figure 4A-I] 1 is a cross-sectional view of a portion of a substrate support carrier according to one or more embodiments. [Figure 4J-M] 1 is a cross-sectional view of a portion of a substrate support carrier according to one or more embodiments. [Figure 4N-P] 1 is a cross-sectional view of a portion of a substrate support carrier according to one or more embodiments. [Figure 4Q-T] 1 is a cross-sectional view of a portion of a substrate support carrier according to one or more embodiments. [Figure 4U] 1 is a cross-sectional view of a portion of a substrate support carrier according to one or more embodiments. [Figure 5A-B]1 is a cross-sectional view of a portion of a substrate support carrier according to one or more embodiments. [Figure 5C-E] 1 is a cross-sectional view of a portion of a substrate support carrier according to one or more embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0013] To facilitate understanding, wherever possible, the same reference numbers have been used to designate identical elements common to the figures.

[0010]

[0014]

[0003] Embodiments described herein provide a substrate support carrier having multiple ceramic disks with a bonding layer interposed between the ceramic disks. One of the ceramic disks has a clamping electrode embedded therein. The other ceramic disk has a resistive heater embedded therein.

[0004] Embodiments described herein provide an assembly of porous plugs extending through the multiple ceramic disks and the bonding layer, a structure to protect the bonding layer from erosion, and electrical wiring to connect the clamping electrode and the resistive heater to a power source.

[0011]

[0015] 1 is a schematic cross-sectional view of an exemplary substrate support carrier 100 for use in a processing chamber. The substrate support carrier 100 includes an electrostatic chuck (ESC) assembly 102 and a temperature control base 104. The ESC assembly 102 includes a top ceramic disk 106 and a bottom ceramic disk 108. The top ceramic disk 106 and the bottom ceramic disk 108 are each formed of a ceramic material such as alumina, aluminum nitride, sapphire, or zirconia. The top ceramic disk 106 and the bottom ceramic disk 108 may have different functionality (e.g., the top ceramic disk 106 includes a clamping electrode embedded therein, and the bottom ceramic disk 108 includes a resistive heater embedded therein, as described below) and may be formed of different ceramic materials appropriate for those functionality. A bonding layer (hereinafter referred to as the "top bonding layer") 110 is interposed between the lower surface 106A of the top ceramic disk 106 and the upper surface 108A of the bottom ceramic disk 108 facing the top ceramic disk 106. The top bonding layer 110 secures and thermally bonds the top ceramic disk 106 to the bottom ceramic disk 108. The temperature control base 104 is formed of a metal such as aluminum. The temperature control base 104 is secured to cylindrical support posts (not shown) that extend through the wall of the processing chamber to support the substrate support carrier 100 thereon. The substrate support carrier 100 may have a generally circular shape, although other shapes capable of supporting a substrate W, such as a rectangular or oval, are also available.

[0012]

[0016] The upper ceramic disk 106 includes a top surface 112 for supporting a substrate W thereon. Clamping electrodes 114 (one shown in FIG. 1 ) are embedded within the upper ceramic disk 106. The clamping electrodes 114 are each connected to a power supply 116 through an electrical feedthrough (not shown in FIG. 1 ) that passes through the ESC assembly 102 and is wired to an electrical terminal (e.g., a Kovar pin, a pogo pin) 118 in an insulating joint 120 on the lower surface 108B of the bottom ceramic disk 108. The insulating joint 120 may be disposed within the temperature control base 104. The power supply 116 applies a voltage to the clamping electrodes 114, creating an electromagnetic field at the joint between the upper surface 112 of the upper ceramic disk 106 and the substrate W. The electromagnetic field interacts with the substrate W to chuck the substrate W to the upper surface 112 of the upper ceramic disk 106. The clamping electrodes 114 may be biased to provide either a monopolar or bipolar chuck.

[0013]

[0017] A resistive heater 122 is embedded within the bottom ceramic disc 108. The resistive heater 122 is connected to a power supply 124 through an electrical feedthrough (not shown in FIG. 1 ) that is wired within the bottom ceramic disc 108 and connected to an electrical terminal (e.g., a Kovar pin) 118 in an insulating joint 120 on the underside 108B of the bottom ceramic disc 108.

[0014]

[0018] It should be noted that the specific exemplary embodiments described herein are merely some possible examples of an ESC assembly having multiple ceramic disks according to the present disclosure and are not intended to limit the possible configurations, specifications, etc. of an ESC assembly according to the present disclosure. For example, an ESC assembly may include three ceramic disks with a resistive heater and radio frequency (RF) electrode embedded within an additional ceramic disk, an RF electrode embedded within, and a gas distribution channel embedded within. The additional ceramic disk may be disposed between the bottom ceramic disk 108 and the temperature control base 104 or between the top ceramic disk 106 and the bottom ceramic disk 108. In another example, the resistive heater and / or RF electrode may be embedded in the top ceramic disk 106 or the bottom ceramic disk 108.

[0015]

[0019] The temperature control base 104 includes channels 126 disposed therein for circulating a fluid through the temperature control base 104. The fluid, typically a liquid such as GALDEN®, flows through the channels 126 from a temperature control unit (not shown) and back to the temperature control unit. In certain processes, the fluid is used to cool the temperature control base 104 to reduce the temperature of the ESC assembly 102 and a substrate W disposed thereon. Conversely, the fluid can be used to increase the temperature of the temperature control base 104 and heat the ESC assembly 102 and a substrate W disposed thereon. In some cases, heat from the resistive heater 122 is used in combination with heat transfer from the temperature control base 104 to the fluid to maintain the ESC assembly 102 or the substrate W at a set temperature.

[0016]

[0020] A bonding layer (hereinafter referred to as the "lower bonding layer") 128 is interposed between the lower surface 108B of the bottom ceramic disc 108 and the upper surface 104A of the temperature-controlled base 104 facing the bottom ceramic disc 108. The upper surface 104A of the temperature-controlled base 104 is opposite the lower surface 104B of the temperature-controlled base 104, which is bonded to the cylindrical support post. The lower bonding layer 128 secures and thermally bonds the bottom ceramic disc 108 to the temperature-controlled base 104.

[0017]

[0021] The upper bond layer 110 and the lower bond layer 128 may be formed of a metallic bond material such as aluminum, manganese molybdenum, platinum, nickel, platinum-nickel composite, or combinations thereof, aluminum silicon carbide (AlSiC), molybdenum (Mo), or aluminum oxide (alumina, Al2O3), or an organic bond material such as a silicone resin or an acrylic resin.

[0018]

[0022] The ESC assembly 102 may further include gas channels 130 embedded in the top ceramic disk 106. In some embodiments, the gas channels (not shown) are embedded in the temperature control base 104. A backside gas (e.g., helium, nitrogen, or argon) is supplied by a gas source (not shown) through flow apertures 132 and the gas channels 130 to aid in temperature control across the substrate W when it is held by the ESC assembly 102. The gas channels 130 may have a diameter of from about 1 μm to about 5 mm.

[0019]

[0023] The flow apertures 132 are disposed within the substrate support carrier 100. As shown in FIG. 1 , the flow apertures 132 extend from the lower surface 104B of the temperature control base 104 to the gas channels 130. The flow apertures 132 include first openings 134 formed through the ESC assembly 102 and the lower bonding layer 128, and second openings 136 formed through the temperature control base 104. The second openings 136 are aligned with the first openings 134 such that the second openings 136 and the first openings 134 overlap by at least 10%. The gas is maintained at a pressure sufficient for the gas to act as a heat transfer path between the substrate W and the ESC assembly 102. The first openings 134 and second openings 136 of the flow apertures 132 may have a height of about 1 μm to about 20 mm and a width of about 10 μm to about 10 mm.

[0020]

[0024] During processing, some of the gases are known to degrade the upper and lower bonding layers 110, 128, which are exposed to the gases at the flow apertures 132 and / or exposed portions at the periphery of the substrate support carrier 100. To insulate the upper and lower bonding layers 110, 128 from the process gases, seals 138 are disposed around the peripheries of the upper and lower bonding layers 110, 128, and O-rings 140 are disposed within the first openings 134 of the flow apertures 132 formed in the lower bonding layer 128. In some embodiments, the seals 138 are disposed around the peripheries of the upper and lower bonding layers 110, 128. The seals 138 and O-rings 140 are formed of materials that are resistant to degradation due to exposure to the process gases. In this embodiment, the seal 138 and O-ring 140 each contact and compress between the temperature control base 104 and the bottom ceramic disc 108 to prevent the flow of process gases, thereby insulating the lower bonding layer 128 .

[0021]

[0025] A porous plug 142 is optionally disposed in the first opening 134 of the flow aperture 132 in the ESC assembly 102. The porous plug 142 is formed of a porous metal material, such as a metal nitride (e.g., aluminum nitride (AlN)), a metal carbide, a metal silicide, a metal oxide (e.g., aluminum oxide (Al2O3)), or a combination thereof, or a porous semiconductor material, which may be a nitride, carbide, silicide, oxide, or a combination thereof. The porous plug 142 has a porosity, such as pores having a size of about 10 nm to about 100 μm and a porosity ranging from about 5% to about 95%. The porosity may be in the form of features, such as periodically or non-periodically arranged holes or channels, within the porous plug 142, which allow the passage of gas from a region of the first opening 134 adjacent the second opening 136 through the porous plug 142 and into fluid communication with the gas channel 130. The porous plug 142 also prevents ionized particles or gases from passing from the processing region within the processing chamber to the insulating portion of the region defined by the openings 134, 136 when the substrate W is not placed on the upper ceramic disk 106. The porous plug 142 may have a diameter of about 0.5 μm to about 5 mm, for example about 1 mm. The porous plug 142 may be cylindrical or mushroom-shaped with a wider portion at the end of the porous plug 142.

[0022]

[0026] In some embodiments, the porous plug 142 includes an in-situ sleeve 202 that at least partially encapsulates the porous plug 142, as shown in FIGS. 2A, 2B, and 2C. The in-situ sleeve 202 can be formed during the fabrication of the porous plug 142. The in-situ sleeve 202 can have a thickness of about 0.1 μm to about 3 mm. The in-situ porous plug can be fabricated from a metal oxide or metal nitride ceramic material, such as aluminum oxide (Al2O3), aluminum nitride (AlN), titanium oxide (TiO), titanium nitride (TiN), yttrium oxide (YO3), mixtures thereof, and combinations thereof. The in-situ sleeve 202 can have the same length as the porous plug 142 and completely encapsulate the porous plug 142 of FIG. 2A. The in-situ sleeve 202 can have a shorter length than the porous plug 142 and partially encapsulate the porous plug 142 of FIG. 2B. The in situ sleeve 202 partially encapsulates the porous plug 142 and may extend beyond the porous plug 142 in FIG. 2C.

[0023] Porous plug assembly in ESC assembly

[0027] 1 , porous plugs 142 extend through ESC assembly 102, including top ceramic disc 106, bottom ceramic disc 108, and top bonding layer 110 interposed between top ceramic disc 106 and bottom ceramic disc 108. Porous plugs 142 may extend through top ceramic disc 106, bottom ceramic disc 108, or through both top ceramic disc 106 and bottom ceramic disc 108. Methods of forming porous plugs 142 extending through ESC assembly 102, as shown in FIG. 1 , are described herein.

[0024]

[0028] First, the top ceramic disk 106 and the bottom ceramic disk 108 are patterned, as shown in FIG. 3A . In some embodiments, the top ceramic disk 106 and the bottom ceramic disk 108 are sintered ceramic bodies formed of a ceramic material such as alumina, aluminum nitride, sapphire, or zirconia by any suitable ceramic forming method, such as hot isostatic pressing (HIP) or tape casting. The patterning may involve micromachining, such as drilling or laser ablation, to form recesses 302 through the lower surface 106A of the top ceramic disk 106, vanes 304 formed from the recesses 302 in the top ceramic disk 106, and holes 306 extending through the bottom ceramic disk 108. The recesses 302 and holes 306 may be different sizes or the same size. The recesses 302 and holes 306 are aligned to have at least a 10% overlap between the lower surface 106A of the top ceramic disk 106 and the upper surface 108A of the bottom ceramic disk 108.

[0025] 1. Single porous plug design

[0029] In some embodiments, the porous plug 142 is formed from a single porous plug that covers a majority of both the top ceramic disc 106 and the bottom ceramic disc 108. As shown in FIGS. 3B and 3C, the single porous plug 142 is disposed within a recess 302 in the top ceramic disc 106. The porous plug 142 may include an in-situ sleeve 202 that encapsulates the porous plug 142, as shown in FIG. 3C. The porous plug 142 may have a length that is greater than the depth of the recess 302 and thus extend into the hole 306 in the bottom ceramic disc 108. The porous plug 142 (and the in-situ sleeve 202, if included) may be press-fit within the recess 302 of the top ceramic disc 106. The porous plug 142 (and the in-situ sleeve 202, if included) may be adhered to the inner surface of the recess 302 of the top ceramic disc 106 using an adhesive.

[0026]

[0030] Following or prior to the deposition of the single porous plug 142, a top bonding layer 110 is interposed between the lower surface 106A of the top ceramic disk 106 and the upper surface 108A of the bottom ceramic disk 108 to bond the top ceramic disk 106 and the bottom ceramic disk 108, as shown in FIGS. 3D, 3E, and 3F. In some embodiments, the top ceramic disk 106 and the bottom ceramic disk 108 are bonded simultaneously with bonding the bottom ceramic disk 108 to the temperature-controlled base 104. The top bonding layer 110 may terminate without contacting the porous plug 142 (and the in-situ sleeve 202, if included), as shown in FIGS. 3C and 3D. The top bonding layer 110 may at least partially contact the porous plug 142, as shown in FIG. 3F. In some embodiments, the upper bonding layer 110 is a metallic bonding layer formed from aluminum, manganese molybdenum, platinum, nickel, platinum-nickel composites, or combinations thereof, aluminum silicon carbide (AlSiC), molybdenum (Mo), aluminum oxide (alumina, Al2O3), or other suitable metallic bonding material, and the bonding process is carried out at a temperature of about 300° C. to about 1500° C. In some embodiments, the upper bonding layer 110 is an organic bonding layer formed from a silicone resin, an acrylic resin, or other suitable organic bonding material, and the bonding process is carried out at a temperature of about 20° C. to about 300° C. The temperature range of the bonding process is selected so that the adhesive in the bonding material does not burn at high temperatures but does not remain at low temperatures.

[0027]

[0031] As shown in FIGS. 3G and 3H , an outer sleeve 308 may further be disposed around the porous plug 142 (and in-situ sleeve 202, if included). In the example shown in FIGS. 3G and 3H , the outer sleeve 308 does not extend into the top ceramic disc 106. However, in some other embodiments, the recess 302 (shown in FIG. 3A ) in the top ceramic disc 106 may be wider than the hole 306 (shown in FIG. 3A ) in the bottom ceramic disc 108 so that the outer sleeve 308 can extend into the recess 302 of the top ceramic disc 106, leaving a small gap (e.g., 10 μm to 1 mm) between the outer sleeve 308 and the inner surface of the recess 302 of the top ceramic disc 106. The outer sleeve 308 may be formed from an insulating plastic such as polyetheretherketone (PEEK), Ultem® (polyetherimide), or a dielectric such as alumina or alumina nitride. The outer sleeve 308 can also help prevent particle generation due to interaction between the plasma and the adhesive material. The outer sleeve 308 can further prevent arcing from the wafer to the adhesive material if a metallic adhesive material is incorporated. The gap 310 between the top bonding layer 110 and the outer sleeve 308 is filled with a dielectric material (e.g., air or a polymer) to reduce particle generation and prevent arcing from the wafer to the adhesive material.

[0028]

[0032] In some embodiments, the porous plug 142 is formed as a single porous plug that covers a majority of either the top ceramic disc 106 or the bottom ceramic disc 108. As shown in Figures 3I and 3J, the porous plug 142 covers a majority of the hole 306 (shown in Figure 3A) in the bottom ceramic disc 108 and does not extend into the recess 302 (shown in Figure 3A) in the top ceramic disc 106. The porous plug 142 may extend beyond the hole 306 in the bottom ceramic disc 108 to the lower surface 106A (shown in Figure 3A) of the top ceramic disc 106, as shown in Figure 3I, or partially to the lower surface 106A of the top ceramic disc 106, as shown in Figure 3J. As shown in Figures 3K, 3L, 3M, and 3N, the porous plug 142 covers a majority of the recess 302 in the top ceramic disc 106 and does not extend into the hole 306 in the bottom ceramic disc 108. As shown in Figure 3L, the porous plug 142 may extend partially to the top surface 108A (shown in Figure 3A) of the bottom ceramic disc 108. As shown in Figures 3I, 3J, 3K, and 3L, the top bonding layer 110 may terminate without contacting the porous plug 142. The top bonding layer 110 may contact the porous plug 142, as shown in Figures 3M and 3N, in which case the top bonding layer 110 includes through holes 312 that at least partially overlap the porous features of the porous plug 142. The porous plug 142 in the recess 302 (shown in Figure 3A) of the top ceramic disc 106 may have a length that is shorter than the depth of the top ceramic disc 106, as shown in Figure 3N, with the top bonding layer 110 protruding into the remainder of the recess 302 of the top ceramic disc 106.

[0029] 2. Multiple porous plug design

[0033] In some embodiments, the porous plug 142 is formed of an upper porous plug 142A that covers most of the top ceramic disc 106 and a lower porous plug 142B that covers most of the bottom ceramic disc 108, as shown in Figures 3O, 3P, 3Q, 3R, 3S, 3T, 3U, 3V, 3W, 3X, and 3Y. The upper porous plug 142A may be press-fit into the recess 302 (shown in Figure 3A) of the top ceramic disc 106 or may be bonded to the inner surface of the recess 302 of the top ceramic disc 106 using an adhesive. The bottom porous plug 142B may be press-fit into the hole 306 (shown in Figure 3A) of the bottom ceramic disc 108 or may be bonded to the inner surface of the hole 306 (shown in Figure 3A) of the bottom ceramic disc 108. In some embodiments, the top porous plug 142A is integrally fabricated as part of the top ceramic disc 106 and the bottom porous plug 142B is integrally fabricated as part of the bottom ceramic disc 108.

[0030]

[0034] The top bonding layer 110 may terminate without contacting the top porous plug 142A or the bottom porous plug 142B, as shown in Figures 3O, 3P, 3Q, 3R, and 3S. The top bonding layer 110 may contact the top porous plug 142A and / or the bottom porous plug 142B, as shown in Figure 3U, in which case the top bonding layer 110 includes through-holes 312 that at least partially overlap the porous features of the top porous plug 142A and the bottom porous plug 142B.

[0031]

[0035] As shown in Figures 3P and 3S, the top porous plug 142A and the bottom porous plug 142B may be at least partially in contact with each other. As shown in Figures 3O, 3Q, and 3R, the top porous plug 142A and the bottom porous plug 142B may not be in contact with each other and have a gap therebetween. As shown in Figures 3O, 3P, 3Q, 3S, 3T, 3U, 3V, and 3W, the top porous plug 142A has a length equal to the depth of the recess 302 (shown in Figure 3A) in the top ceramic disk 106 and covers the entire recess 302. As shown in Figures 3R, 3X, and 3Y, the top porous plug 142A may have a length shorter than the depth of the recess 302 (shown in Figure 3A) in the top ceramic disk 106, leaving a gap between the top ceramic disk 106 and the top porous plug 142A. As shown in Figures 3S and 3T, the top porous plug 142A and the bottom porous plug 142B are not aligned with each other, but may overlap. As shown in Figure 3T, the dielectric sleeve 314 is formed of a metal oxide or metal nitride ceramic material, such as aluminum oxide (Al2O3), aluminum nitride (AlN), titanium oxide (TiO), titanium nitride (TiN), yttrium oxide (Y2O3), mixtures thereof, and combinations thereof. The dielectric sleeve may comprise a plastic such as polyetheretherketone (PEEK) or Ultem® (polyetherimide) and may be disposed between the top porous plug 142A and the bottom porous plug 142B. The dielectric sleeve 314 may act as an insulator to prevent particle formation during interaction of the plasma with the adhesive material. If the adhesive material is substantially conductive, the dielectric sleeve 314 may help suppress light-up in the gas holes and arcing from the wafer to the cooling plate.

[0032]

[0036] As shown in Figures 3V, 3W, 3X, and 3Y, the porous plug 142 may include a central porous plug 142C between the top porous plug 142A and the bottom porous plug 142B. The central porous plug 142C may be disposed within an opening in the top bonding layer 110, as shown in Figure 3V. The central porous plug 142C may protrude into the top ceramic disk 106 and the bottom ceramic disk 108, as shown in Figures 3W, 3X, and 3Y. The top bonding layer 110 may contact the central porous plug 142C, as shown in Figures 3V, 3W, and 3X. The top bonding layer 110 may terminate without contacting the central porous plug 142C, as shown in Figure 3Y. The central porous plug 142C may contact the bottom porous plug 142B, as shown in Figures 3V, 3W, 3X, and 3Y. As shown in FIG. 3Y, the center porous plug 142C and the bottom porous plug 142B may not contact each other but have a gap therebetween.

[0033] ESC assembly bond edge protection

[0037] The substrate support carrier 100, including the ESC assemblies 102, is exposed to process gases and process reaction by-products of the substrate processing performed in the processing chamber. If some of these gases and by-products find their way into the top bonding layer 110 interposed between the top ceramic disk 106 and the bottom ceramic disk 108 in the ESC assembly 102, they can degrade and erode the top bonding layer 110. Embodiments of the ESC assemblies 102 are described herein in which bond edge protection features are located around the periphery of the top bonding layer 110 and / or in the first openings 134 (shown in FIG. 1 ) in the top bonding layer 110.

[0034] 1. Bonded edge protection with interleaved features around the periphery

[0038] In some embodiments, the bond edge protection features at the periphery of the top bonding layer 110 are interleaved features, such as steps 402 and protrusions 404, that extend from the top ceramic disk 106 through the top bonding layer 110 and into the bottom ceramic disk 108, as shown in FIGS. 4A, 4B, and 4C. Similar interleaved features can also be applied to the bottom ceramic disk 108 and the temperature control base 104 (not shown). The top surface 104A of the temperature control base 104 may be covered with a thin layer of insulating material (not shown). These interleaved features on the periphery of the ESC assembly 102 form one or more labyrinths that effectively reduce the path of process gases and process reaction by-products, substantially preventing these gases and by-products from reaching the top bonding layer 110 and thus reducing undesired contamination.

[0035] 2. Bonding edge protection by O-ring or encapsulation layer

[0039] In some embodiments, the bond edge protection feature at the periphery of the top bond layer 110 is a seal formed of a material that is resistant to degradation due to exposure to process gases. The seal can also protect the lower bond layer 128. The seal can be two O-rings 406, one at the periphery of the top bond layer 110 and one at the periphery of the lower bond layer 128, as shown in FIG. 4D. The seal can be a single O-ring 408 that covers both the periphery of the top bond layer 110 and the periphery of the lower bond layer 128, as shown in FIG. 4E. The seal can be a conformal deposit layer 410 of a plasma-resistant material, such as Rhodorsil® or PTFE, that encapsulates the top bond layer 110, bottom ceramic disk 108, and lower bond layer 128, as shown in FIG. 4F.

[0036] 3. Spray coating to protect bond edges

[0040] In some embodiments, the bond edge protection feature at the periphery of the upper bond layer 110 is a spray coating material 412. The spray coating material 412 can also protect the lower bond layer 128. Methods for forming such a spray coating material 412 at the periphery of the upper bond layer 110 are described herein.

[0037]

[0041] First, as shown in FIG. 4G, a pocket 414 is formed between the top ceramic disk 106 and the bottom ceramic disk 108. The pocket 414 may have a height of about 0.1 mm to about 20 mm and a width of about 0.1 mm to about 10 mm. Next, as shown in FIG. 4H, the pocket 414 is filled with a spray-coated material 412. As shown in FIG. 4I, any unwanted portions of the spray-coated material 412 (e.g., overfilled spray-coated material) are removed by machining. The pocket 414 can be filled with a single-layer or multi-layer dielectric, including alumina, rare earth oxides, or a combination thereof, using atomic layer deposition. Any unwanted portions of the deposited material 412 can be removed by machining.

[0038] 4. Bonding edge protection with dissimilar bonding materials

[0042] In some embodiments, the first opening 134 (shown in FIG. 1 ) in the top bonding layer 110 and / or the bonding edge protection feature at the periphery of the top bonding layer 110 is a dissimilar bonding material 416 that is different from the top bonding layer 110. The dissimilar bonding material 416 can be disposed adjacent to the edge of the top bonding layer 110 within the first opening 134 (shown in FIG. 1 ), as shown in FIG. 4J. The dissimilar bonding material 416 can be disposed adjacent to the periphery of the bottom bonding layer 128 within the first opening 134, as shown in FIG. 4K. The dissimilar bonding material 416 can be disposed adjacent the periphery of the upper bonding layer 110 within the first opening 134 with an O-ring 140 within the upper bonding layer 110 as shown in Figure 4L, with an O-ring 140 within the upper bonding layer 110 and the lower bonding layer 128 as shown in Figure 4M, with an O-ring 140 within the lower bonding layer 128 as shown in Figure 4N, or without an O-ring as shown in Figure 4O. The dissimilar bonding material 416 can be disposed adjacent the periphery of the upper bonding layer 110 within a seal, such as an O-ring 140, as shown in Figure 4P. A dissimilar bonding material 416 may be disposed adjacent to the periphery of the upper bonding layer 110 and the periphery of the lower bonding layer 128 with O-rings 140 on the exterior of the upper bonding layer 110 and the lower bonding layer 128 as shown in FIG. 4Q, with O-rings 140 on the exterior of the lower bonding layer 128 as shown in FIG. 4R, with O-rings 140 on the exterior of the upper bonding layer 110, or without O-rings as shown in FIG. 4T. The dissimilar bonding material 416 may have a convex or concave meniscus and may be formed of a material that is resistant to halogen plasma corrosion. In some embodiments, a plasma-resistant polymeric material 418 is disposed adjacent to the edge of the upper bonding layer 110 and / or the edge of the lower bonding layer 128 as shown in FIG. 4U without an O-ring. The polymeric material 418 may be dissimilar to the upper bonding layer 110 and the lower bonding layer 128.

[0039] Electrical connections inside the ESC assembly

[0043] As shown in FIG. 1 , the clamp electrode 114 is embedded in the top ceramic disc 106, and the resistive heater 122 is embedded in the bottom ceramic disc 108. Referring to FIGS. 5A-5D , the resistive heater 122 is connected to an electrical feedthrough 502 that passes through the bottom ceramic disc 108 and to the underside 108B of the bottom ceramic disc 108, where electrical terminals 118 are brazed. The electrical terminals 118 may have different dimensions. The electrical terminals 118 are brazed to pads (not shown) on the underside 108B of the bottom ceramic disc 108, and each may have features to ensure connection to the pads. The clamp electrode 114 is connected to an electrical feedthrough 504 that passes through the ESC assembly 102, including the top ceramic disc 106, the top bonding layer 110, and the bottom ceramic disc 108, and to the underside 108B of the bottom ceramic disc 108. Embodiments of the above electrical connections of the clamp electrodes 114 in the ESC assembly 102 are described herein.

[0040]

[0044] In some embodiments, an electrical feedthrough 504 connected to a clamp electrode 114 embedded in the top ceramic disk 106 is routed through a metal bump 506 disposed within an opening in the top bonding layer 110, as shown in FIGS. 5A and 5B. The opening in the top bonding layer 110 around the metal bump 506 may be filled with a dielectric material (e.g., air, epoxy, ceramic, or a plastic sleeve). The electrical feedthrough 504 extends from the clamp electrode 114 to the underside 108B of the bottom ceramic disk 108, where the electrical feedthrough 504 contacts an electrical terminal 118, as shown in FIGS. 5A and 5B. The electrical feedthrough 504 may be disposed at the center of the ESC assembly 102 and connected to the electrical terminal 118 at the center of the ESC assembly 102, as shown in FIG. 5A. The electrical feedthrough 504 may be spaced apart from the center of the ESC assembly 102 and connected to the electrical terminal 118 spaced apart from the center of the ESC assembly 102, as shown in FIG. 5B.

[0041]

[0045] In some embodiments, an electrical feedthrough 504 connected to the clamp electrode 114 embedded in the top ceramic disk 106 is routed within the top ceramic disk 106 and terminates at the underside of the top ceramic disk 106 where the electrical feedthrough 504 contacts an electrical terminal 118 that extends through an opening in the top bonding layer 110 and the bottom ceramic disk 108, as shown in FIGS. 5C and 5D . The opening in the top bonding layer 110 around the electrical terminal 118 may be filled with a dielectric material (e.g., air, epoxy, ceramic, or a plastic sleeve). The electrical feedthrough 504 may be located at the center of the ESC assembly 102 and connected to the electrical terminal 118 at the center of the ESC assembly 102, as shown in FIG. 5C . The electrical feedthrough 504 may be located at the periphery of the ESC assembly 102 and connected to the electrical terminal 118 at the periphery of the ESC assembly 102, as shown in FIG. 5D . The electrical feedthrough 504 may be spaced from the center of the ESC assembly 102 and connected to an electrical terminal 118 that is spaced from the center of the ESC assembly 102, as shown in FIG. 5E.

[0042]

[0046] It should be noted that while one clamp electrode 114 is illustrated in FIGS. 5A and 5C and two clamp electrodes 114 are illustrated in FIGS. 5B, 5D, and 5E, there may be many more clamp electrodes 114 and corresponding electrical feedthroughs 504 embedded within the ESC assembly 102.

[0043]

[0047] Embodiments described herein provide a substrate support carrier having a top ceramic disk, a bottom ceramic disk, and a bonding layer interposed between the top and bottom ceramic disks. A clamping electrode is embedded in the top ceramic disk and connected to a power source via an electrical feedthrough that runs through the top ceramic disk, the bonding layer, and the bottom ceramic disk. A resistive electrode is embedded in the bottom ceramic disk and connected to a power source via an electrical feedthrough that runs through the bottom ceramic disk. A porous plug, either a single porous plug or an assembly of multiple porous plugs, may be inserted through the top and bottom ceramic disks. Bond edge protection embodiments of the bonding layer are also described.

[0044]

[0048] While the foregoing is directed to the embodiments described herein, other and further embodiments may be devised without departing from the basic scope thereof as determined by the following claims.

Claims

1. 1. A substrate support carrier for use in a processing chamber, comprising:

1. An electrostatic chuck (ESC) assembly comprising: an upper ceramic disc having a recess formed in a lower surface of the upper ceramic disc; a bottom ceramic disc having a hole therethrough; a top bonding layer interposed between the lower surface of the top ceramic disc and the upper surface of the bottom ceramic disc; a porous plug located within at least one of the recess of the top ceramic disk and the hole of the bottom ceramic disk; an ESC assembly including: A temperature control base; a lower bonding layer interposed between the lower surface of the bottom ceramic disc and the upper surface of the temperature control base; A substrate support carrier comprising:

2. The substrate support carrier of claim 1 , wherein the porous plug comprises an in-situ sleeve at least partially encapsulating the porous plug.

3. The substrate support carrier of claim 1 , wherein the porous plug extends into the hole in the bottom ceramic disk and does not extend into the recess in the top ceramic disk.

4. The substrate support carrier of claim 1 , wherein the porous plug extends into the recess in the top ceramic disk and does not extend into the hole in the bottom ceramic disk.

5. The substrate support carrier of claim 1 , wherein the porous plugs include a top porous plug extending into the recess of the top ceramic disk and a bottom porous plug extending into the hole of the bottom ceramic disk.

6. The substrate support carrier of claim 5 , wherein said top porous plug is integrally fabricated as part of said top ceramic disk and said bottom porous plug is integrally fabricated as part of said bottom ceramic disk.

7. The substrate support carrier of claim 5 , wherein the porous plugs further include a central porous plug between the top porous plug and the bottom porous plug and extending into the opening in the top bonding layer.

8. 1. A substrate support carrier for use in a processing chamber, comprising:

1. An electrostatic chuck (ESC) assembly comprising: An upper ceramic disc; a bottom ceramic disc; a top bonding layer interposed between the lower surface of the top ceramic disc and the upper surface of the bottom ceramic disc; an ESC assembly including: A temperature control base; a lower bonding layer interposed between the lower surface of the bottom ceramic disc and the upper surface of the temperature control base; a bonding edge protection feature disposed on an edge of at least one of the upper bonding layer and the lower bonding layer; A substrate support carrier comprising:

9. 9. The substrate support carrier of claim 8, wherein the bonding edge protection feature comprises one or more protrusions spaced apart from the center of the substrate support carrier, extending from the top ceramic disk through an opening in the top bonding layer and into the bottom ceramic disk.

10. The substrate support carrier of claim 8 , wherein the bonding edge protection features include a first O-ring at a periphery of the upper bonding layer and a second O-ring at a periphery of the lower bonding layer.

11. The substrate support carrier of claim 8 , wherein the bonding edge protection feature comprises an O-ring covering both a periphery of the upper bonding layer and a periphery of the lower bonding layer.

12. The substrate support carrier of claim 8 , wherein the bond edge protection feature comprises a layer of plasma resistant material encapsulating the top bond layer, the bottom ceramic disk, and the bottom bond layer.

13. The substrate support carrier of claim 8 , wherein the bonding edge protection feature comprises a spray coating material on a periphery of the top bonding layer.

14. The substrate support carrier of claim 8 , wherein the bonding edge protection feature comprises a dissimilar bonding material disposed on an edge of at least one of the upper bonding layer and the lower bonding layer.

15. The substrate support carrier of claim 8 , wherein the bonding edge protection feature comprises a plasma resistant polymeric material disposed on an edge of the top bonding layer.

16. 1. An electrostatic chuck (ESC) assembly comprising: an upper ceramic disc having a clamping electrode embedded therein; a bottom ceramic disk having a plurality of resistive heaters embedded therein; a bonding layer interposed between the lower surface of the top ceramic disc and the upper surface of the bottom ceramic disc; a first electrical feedthrough connected to the clamp electrode; a plurality of second electrical feedthroughs each connected to one of the plurality of resistive heaters and routed within the bottom ceramic disc to the lower surface of the bottom ceramic disc; a plurality of electrical terminals brazed to the lower surface of the bottom ceramic disc; An ESC assembly comprising:

17. a metal bump at the center of the ESC assembly within the opening in the bonding layer; 17. The ESC assembly of claim 16, wherein the first electrical feedthrough is routed through the metal bump and connected to one of the plurality of electrical terminals at the center of the ESC assembly on the underside of the bottom ceramic disk.

18. a metal bump disposed within the opening in the bonding layer and spaced from the center of the ESC assembly; 17. The ESC assembly of claim 16, wherein the first electrical feedthrough is routed through the metal bump to the underside of the bottom ceramic disk at a distance from the center of the ESC assembly.

19. 17. The ESC assembly of claim 16, wherein the first electrical feedthrough is routed within the top ceramic disc and connected to one of a plurality of electrical terminals that extend through an opening in the bonding layer at the center of the ESC assembly and through the bottom ceramic disc.

20. 17. The ESC assembly of claim 16, wherein the first electrical feedthrough is routed within the top ceramic disc and connected to one of the plurality of electrical terminals spaced apart from the center of the ESC assembly that extend through an opening in the bonding layer and through the bottom ceramic disc.

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