Purge flow adjustment for growth rate and uniformity with epi insulating plates and parallel blocks

Abstract

A substrate processing method and apparatus suitable for use in semiconductor manufacturing includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an insulating plate positioned above the substrate, where flowing the purge gas includes diverting a portion of the purge gas below the insulating plate through a plurality of perforations in the insulating plate. The method also includes flowing one or more process gases over the substrate to deposit material on the substrate, where flowing the one or more process gases over the substrate includes directing the one or more process gases through one or more flow passages defined at least in part by a space between the insulating plate and the substrate.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] This disclosure relates to semiconductor processing chambers, and more particularly to one or more methods and apparatus for introducing a purge gas into a processing chamber. [Background technology]

[0002]

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing substrates involves depositing a material, such as a dielectric or semiconductor material, on the upper surface of the substrate. The material can be deposited in a lateral flow chamber by flowing a process gas parallel to the surface of the substrate positioned on a support and pyrolyzing the process gas to deposit the material from the gas onto the substrate surface. However, the material deposited on the surface of the substrate often has a non-uniform thickness, which can adversely affect the performance of the final device.

[0003]

[0003] Therefore, a need exists for improved process chamber components and processing methods. Summary of the Invention

[0004]

[0004] The present disclosure relates to semiconductor processing chambers, and more particularly to one or more methods for introducing a purge gas into a processing chamber.

[0005] In one or more embodiments, a method for processing a substrate suitable for use in semiconductor manufacturing is provided. The method includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an insulating plate disposed above the substrate, where flowing the purge gas includes diverting a portion of the purge gas below the insulating plate. The method includes flowing one or more process gases over the substrate to deposit material on the substrate, where flowing the one or more process gases over the substrate includes directing the one or more process gases through one or more flow passages defined at least in part by a space between the insulating plate and the substrate.

[0006] In one or more embodiments, a substrate processing method suitable for use in semiconductor manufacturing is provided. The method includes heating a substrate positioned on a substrate support. The method includes flowing a first purge gas over an insulating plate disposed above the substrate. The method includes flowing a second purge gas through one or more perforations in a first parallel block disposed below the insulating plate. The method includes flowing a process gas over the substrate to deposit material on the substrate, where flowing the process gas over the substrate includes directing the process gas through a space between the insulating plate and the substrate.

[0007] In one or more embodiments, a flow guide applicable for use in semiconductor manufacturing is provided. The flow guide includes an insulating plate having a first surface and a second surface opposite the first surface, the insulating plate having one or more perforations extending through the first surface to the second surface. The flow guide includes a first parallel block extending from the second surface, the first parallel block having a first surface generally perpendicular to the second surface of the insulating plate and having one or more perforations extending through the first surface of the first parallel block. The method also includes a second parallel block extending from the second surface, the second parallel block being spaced apart from the first parallel block to define a flow path between the first and second parallel blocks. The second parallel block has a first surface generally perpendicular to the second surface of the insulating plate and having one or more perforations extending through the first surface of the second parallel block.

[0008]

[0008] In order that the above-described features of the present disclosure may be understood in detail, the above-summarized disclosure will be more particularly described by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure, which may also admit of other equally effective embodiments. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a partial schematic cross-sectional side view of a processing chamber according to one or more embodiments. [Figure 2] 1 is a partial schematic cross-sectional side view of a processing chamber according to one or more embodiments. [Figure 3] 1 is a schematic partial perspective view of a flow guide insert according to one or more embodiments. FIG. [Figure 4] 1 is a partial schematic cross-sectional side view of an insulating plate in a processing chamber according to one or more embodiments. [Figure 5] 1 is a partial schematic top cross-sectional view of a processing chamber according to one or more embodiments. [Figure 6]1 is a schematic block diagram of a substrate processing method according to one or more embodiments. [Figure 7A] 1 is a schematic partial perspective view of a liner and parallel block of a flow guide insert according to one or more embodiments. FIG. [Figure 7B] 1 is a schematic partial perspective view of an insulating plate of a flow guide insert according to one or more embodiments. FIG. [Figure 7C] 1 is a schematic partial perspective view of an insulating plate and liner of a flow guide insert according to one or more embodiments. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0018] To facilitate understanding, wherever possible, the same reference numerals have been used to designate identical elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011]

[0019] FIELD OF THE DISCLOSURE The present disclosure relates to semiconductor processing chambers, and more particularly to one or more methods and apparatus for introducing a purge gas into a processing chamber.

[0012]

[0020] 1 is a partial schematic cross-sectional side view of a processing chamber 1000 according to one or more embodiments. The processing chamber 1000 is a deposition chamber. In one or more embodiments, the processing chamber 1000 is an epitaxial deposition chamber. The processing chamber 1000 is used to grow an epitaxial film on a substrate 102. The processing chamber 1000 creates a cross-flow of precursors across the top surface of the substrate 102. The processing chamber 1000 is illustrated at the processing conditions in FIG.

[0013]

[0021] The processing chamber 1000 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed within the chamber body are a substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), multiple upper heat sources 141, and multiple lower heat sources 143. As shown, a controller 120 is in communication with the processing chamber 100 and is used to control processes and methods, such as steps of the methods described herein. The present disclosure contemplates that each heat source described herein may include one or more of lamp(s), resistive heater(s), light-emitting diode (LED)(s), and / or laser(s). The present disclosure contemplates that other heat sources may be used.

[0014]

[0022] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 that supports the substrate 102. The plurality of upper heat sources 141 are disposed between the upper window and the lid 154. The plurality of upper heat sources 141 form part of an upper heat source module 155. The lid 154 may include a plurality of sensors (not shown) disposed therein or thereon to measure the temperature within the processing chamber 100. The plurality of lower heat sources 143 are disposed between the lower window 110 and the floor 152. The plurality of lower heat sources 143 form part of the lower heat source module 145. In one or more embodiments, the upper window 108 is an upper dome and is formed of an energy-transmitting material such as quartz. In one or more embodiments, the lower window 110 is a lower dome and is formed of an energy-transmitting material such as quartz. A preheat ring 302 is disposed outside the substrate support 106. The preheat ring 302 is supported on a ledge of the lower liner 311. The stopper 304 includes a plurality of arms 305 a, 305 b, each including a lift pin stopper 122 against which at least one of the lift pins 132 may rest when the substrate support 106 is lowered (e.g., from a process position to a transfer position).

[0015]

[0023] Disposed within the interior region is a substrate support 106. The substrate support 106 includes an upper surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that move and / or adjust the shaft 118 and / or the substrate support 106.

[0016]

[0024] The substrate support 106 may include lift pin bores 107 disposed therein. The lift pin bores 107 are sized to accommodate lift pins 132 for lifting the substrate 102 from the substrate support 106 either before or after a deposition process is performed.

[0017]

[0025] The flow guide insert 1010 includes an insulating plate 321 having a first surface 1012 and a second surface 1013 opposite the first surface 1012. The second surface 1013 faces the substrate support 106. The flow guide insert 1010 includes an upper liner 1020. The upper liner 1020 includes an annular section 1021. The upper liner 1020 includes one or more inlet openings 1023 that extend to an inner surface 1024 of the annular section 1021 on a first side of the upper liner 1020 and one or more outlet openings 1025 that extend to the inner surface 1024 of the annular section 1021 on a second side of the upper liner 1020.

[0018]

[0026] The one or more inlet openings 1023 extend from the outer surface 1026 to the inner surface 1024 of the annular section 1021 of the upper liner 1020. The one or more outlet openings 1025 extend from the lower surface 1029 of the upper liner 1020 to the inner surface 1024. The upper liner 1020 includes a first extension 1027 and a second extension 1028 disposed outside the lower surface 1029 of the upper liner 1020. At least a portion of the annular section 1021 of the upper liner 1020 is aligned with the first extension 1027 and the second extension 1028. In the embodiment shown in FIG. 1 , the bottom edge of the insulating plate 321 is aligned above the bottom edge of the upper liner 1020. 1, the bottom edge of insulating plate 321 is part of second surface 1013, and the bottom edge of upper liner 1020 is part of first extension 1027 and / or second extension 1028. The present disclosure contemplates that the bottom edge of upper liner 1020 may be part of lower surface 1029.

[0019]

[0027] Insulating plate 321 is disk-shaped and annular section 1021 is ring-shaped. However, it is contemplated that insulating plate 321 and / or annular section 1021 may be rectangular or other geometric shapes. Insulating plate 321 at least partially fluidly separates upper portion 136b from lower portion 136a.

[0020]

[0028] The flow module 112 (which may define at least a portion of one or more sidewalls of the processing chamber 1000) includes one or more first inlet openings 1014 fluidly connected to the lower portion 136a of the processing region 136. The flow module 112 includes one or more second inlet openings 1015 fluidly connected to the upper portion 136b of the processing region 136. The one or more first inlet openings 1014 are fluidly connected to one or more flow gaps between the upper liner 1020 and the lower liner 311. The one or more second inlet openings 1015 are fluidly connected to one or more inlet openings 1023 in the upper liner 1020. The gas inlet(s) 1014 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlet(s) 164 are fluidly connected to one or more purge gas sources 162. One or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases supplied using the one or more process gas sources 151 can include one or more reactive gases (such as one or more of a silicon-containing gas, a phosphorus-containing gas, and / or a germanium-containing gas, and / or one or more carrier gases (such as one or more of nitrogen (N) and / or hydrogen (H)). The one or more purge gases supplied using the one or more purge gas sources 162 can include one or more inert gases (such as one or more of argon (Ar), helium (He), and / or nitrogen (N)). The one or more cleaning gases supplied using the one or more cleaning gas sources 153 can include one or more of hydrogen and / or chlorine. In one embodiment, which can be combined with other embodiments, the one or more process gases include silicon phosphide (SiP) and / or phosphine (PH), and the one or more cleaning gases include hydrochloric acid (HCl).

[0021]

[0029] The one or more gas exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects the one or more gas exhaust outlets 116 to an exhaust pump 157. The exhaust system 178 can assist in controlled deposition of a layer on the substrate 102. The exhaust system 178 is located on an opposite side of the processing chamber 100 from the flow module 112.

[0022]

[0030] In one or more embodiments, the one or more inlet openings 1023 are oriented in a horizontal direction and the one or more outlet openings 1025 are oriented in an oblique direction, as shown in Figure 1. The present disclosure contemplates that the one or more inlet openings and / or outlet openings 1023, 1025 may be oriented in a horizontal direction, may be oriented in an oblique direction (non-parallel to the horizontal), and / or may include one or more redirections (such as the redirections shown for the one or more first inlet openings 1014 and one or more gas exhaust outlets 116).

[0023]

[0031] During a deposition process (e.g., an epitaxial growth process), one or more process gases P1 flow through one or more first inlet openings 1014, through one or more gaps, into the lower portion 136a of the processing region 136, and over the substrate 102. During the deposition process, one or more purge gases P2 flow through one or more second inlet openings 1015, through one or more inlet openings 1023 in the upper liner 1020, and into the upper portion 136b of the processing region 136. The one or more purge gases P2 flow simultaneously with the flow of the one or more process gases P1. The flow of the one or more purge gases P2 through the upper portion 136b helps reduce or prevent the flow of one or more process gases P1 into the upper portion 136b, which would otherwise contaminate the upper portion 136b. The one or more process gases P1 pass through the gap between the upper liner 1020 and the lower liner 311 and are exhausted through one or more gas exhaust outlets 116. The one or more purge gases P2 are exhausted through one or more outlet openings 1025, through the same gap between the upper liner 1020 and the lower liner 311 as the one or more process gases P1, and through the same one or more gas exhaust outlets 116. The present disclosure contemplates that the one or more purge gases P2 may be separately exhausted through one or more second gas exhaust outlets separate from the one or more gas exhaust outlets 116.

[0024]

[0032] The present disclosure also contemplates that one or more purge gases may be supplied to and exhausted from purge region 138 (through multiple purge gas inlets 164) during the deposition process.

[0025]

[0033] 2 is a partial schematic cross-sectional side view of a processing chamber 2000 according to one or more embodiments. Processing chamber 2000 is similar to processing chamber 1000 shown in FIG. 1, including one or more of its aspects, features, components, characteristics, and / or operations. Processing chamber 2000 is illustrated at processing conditions in FIG. 2.

[0026]

[0034] The processing chamber 2000 includes a window 2008 that at least partially defines the processing region 136. The window 2008 includes a concave or flat first surface 2011 (in the embodiment shown in FIG. 2, the first surface 2011 is flat). The window 2008 includes a convex second surface 2012. The second surface 2012 faces the substrate support 106.

[0027]

[0035] The processing chamber 2000 includes a liner 2020. The liner 2020 is similar to the upper liner 1020 shown in FIG. 1 , including one or more aspects, features, components, characteristics, and / or operation thereof. The processing chamber 2000 includes a flow guide insert 310 (shown in FIG. 3 ) including a first parallel block 331, a second parallel block 332, and an insulating plate 321. The parallel block 331 is positioned below the insulating plate 321 and above the substrate support 106. The parallel block 331 aids in the flow of the process gas P1 over the substrate 102, promoting improved deposition uniformity. In one or more embodiments, the flow guide insert 310 is supported by and / or coupled to the upper liner 2020 and / or the preheat ring 302. In one or more embodiments, the flow guide insert 310 rests on the upper liner 2020 and / or the preheat ring 302.

[0028]

[0036] The window 2008 includes an inner section 2013 and an outer section 2014. The first face 2011 and the second face 2012 are at least a portion of the inner section 2013. The inner section 2013 is transparent, and the outer section 2014 is opaque. The outer section 2014 is at least partially received in one or more sidewalls of the processing chamber 2000 (such as the flow module 112 and / or the upper body 156).

[0029]

[0037] 3 is a schematic partial perspective view of a flow guide insert 310 according to one or more embodiments. The flow guide insert 310 includes an insulating plate 321, a first parallel block 331, and a second parallel block 332. The first parallel block 331 and the second parallel block 332 are disposed opposite each other. The flow guide insert 310 has a circular shape, although other geometric configurations are also contemplated.

[0030]

[0038] The insulating plate 321 includes a first side 322 and a second side 323 opposite the first side 322 along a first direction D1. The first side 322 and the second side 323 are each arc-shaped. In one or more embodiments, the direction D1 is parallel to the gas flow direction in the process chambers 1000, 2000 of FIGS. 1 and 2 to guide the process gas P1 into a rectangular flow opening 350 defined between a flat inner surface 333 of the first parallel block 331 and a flat inner surface 334 of the second parallel block 332.

[0031]

[0039] The first parallel block 331 extends outward from and is connected to the third side 324 of the insulating plate 321, and the second parallel block 332 extends outward from and is connected to the fourth side 325 of the insulating plate 321. The third side 324 is opposite the fourth side 325 along direction D2, which is perpendicular to direction D1. The third side 324 and the fourth side 325 are linear, as are the surfaces of the first parallel block 331 and the second parallel block 332 that fit into the third side 324 and the fourth side 325 of the insulating plate 321.

[0032]

[0040] It is contemplated that the first parallel block 331 and the second parallel block 332 (as shown in FIG. 1) may be omitted from the flow guide insert 310. In one or more embodiments in which the parallel blocks 331 and 332 are omitted, the insulating plate 321 may be supported by the upper liner 1020 and / or the insulating plate 321 may be secured to the interior of the processing chamber via another mounting mechanism.

[0033]

[0041] In embodiments having first and second parallel blocks 331, 332, it is contemplated that the size of the parallel blocks can be changed to enlarge or reduce the lower portion 136a of the processing region 136. It is also contemplated that the first and second parallel blocks 331, 332 can include actuating supports configured to mechanically raise and lower the insulating plate 321.

[0034]

[0042] During processing, one or more process gases (such as process gas P1 in FIGS. 1 and 2 ) flow through the rectangular flow openings 350 as they flow through the lower portion 136a and over the substrate 102. The rectangular flow openings 350 facilitate tunability of process, purge, and / or cleaning gases (e.g., pressure and flow rate) and promote process and deposition uniformity while providing a path for cleaning gases to the upper portion 136b. In one example, the rectangular flow openings 350 facilitate the use of high pressures and low flow rates for process and cleaning gases. The rectangular flow openings 350 also help mitigate the effects of substrate 102 rotation during deposition on process and film thickness uniformity. In one example, the rectangular flow openings 350 mitigate or eliminate the effects of gas vortices.

[0035]

[0043] In FIG. 3 , the insulating plate 321 includes a plurality of perforations 360 formed therethrough. The perforations 360 are sized, spaced (e.g., hole density), and angled to allow gas (e.g., purge gas P2 in FIGS. 1 and 2 ) to flow from its upper side to its lower side during processing. It is contemplated that the perforations 360 may be concentrated at the edge or center of the insulating plate 321, or the perforations may be evenly distributed, or the perforations 360 may have a size or density that increases along the direction D1 or D2. The perforations 360 may be uniform in size or may be non-uniform in size. In one or more embodiments, the spacing between the perforations 360 may be uniform. In one or more embodiments, the perforations 360 may be clustered in a particular area of ​​the insulating plate 321. In one or more embodiments, the insulating plate 321 may have many small perforations 360 covering the entire plate to keep the insulating plate 321 clean, or the insulating plate 321 may have several large perforations 360 strategically placed to improve deposition uniformity on the substrate 102.

[0036]

[0044] 3, the perforations 360 may be circular facing the top of the insulating plate 321. It is also contemplated that the perforations 360 may be slits or any other regular or irregular shape, such as in the shape of an elongated slot. Within the insulating plate 321, the perforations 360 may form a right cylinder, an oblique cylinder, a cone, or any other regular or irregular three-dimensional shape relative to the plane of the insulating plate 321. It is contemplated that the perforations 360 form a right angle with the outer surface 345 of the insulating plate 321. It is also contemplated that the perforations 360 may be inclined toward the flow direction of the process gas P1.

[0037]

[0045] During processing, purge gas P2 flows from the upper processing region 136b to the lower processing region 136a through the perforations in the insulating plate 321 (see FIGS. 1 and 2). The purge gas P2 forms a relatively thin gas curtain along the bottom surface of the insulating plate (e.g., the surface facing the substrate 102). The gas curtain reduces material deposition on the insulating plate 321 and extends the time between cleaning steps. Additionally, the gas curtain allows the substrate to be positioned closer to the insulating plate 321 during processing, thereby reducing the processing area and the amount of processing gas used.

[0038]

[0046] The parallel blocks 331, 332 also include a plurality of perforations 362. In one or more embodiments, the perforations 362 may cover the entire inner surfaces 333, 334 of the parallel blocks 331, 332. In one or more embodiments, the perforations 362 may be concentrated at the edges or centers of the inner surfaces 333, 334 of the parallel blocks 331, 332. The perforations 362 may be uniform in size, or may be non-uniform in size. In one or more embodiments, the spacing between the perforations 362 may be uniform. In one or more embodiments, the perforations 362 may be clustered in specific areas of the parallel blocks 331, 332.

[0039]

[0047] Although the perforations 362 are circular, it is contemplated that the perforations 362 may be slits or other regular or irregular shapes. Within the parallel blocks 331, 332, the perforations 362 may form a right cylinder, an oblique cylinder, a cone, or other regular or irregular three-dimensional shape. The perforations 362 form a right angle with the inner surfaces 333, 334 of the parallel blocks 331, 332. Other orientations (e.g., non-orthogonal) are also contemplated. It is also contemplated that the perforations 362 may be angled toward the process gas exhaust outlet 116 or the process gas inlet 1014. The perforations 362 are operatively and fluidly coupled to a gas source for supplying gas. For example, the perforations 362 may receive purge gas from the purge gas source 162. Gas supplied through the perforations 362 in direction D2 facilitates improved gas flow along direction D1. In one or more embodiments, gas supplied through perforations 362 focuses the gas flow of process gas P1 (see FIGS. 1 and 2) flowing in direction D1, thus promoting improved deposition uniformity on the substrate. In one or more embodiments, gas supplied through perforations 362 facilitates flow of process gas P1 closer to substrate 102 (see FIGS. 1 and 2), reduces or eliminates bypass of process gas P1, and reduces or eliminates upward flow of process gas P1 toward upper portion 136b.

[0040]

[0048] In FIG. 3, both the insulating plate 321 and the parallel blocks 331, 332 have perforations 360, 362, however, it is envisioned that the perforations 360, 362 may be used in only the insulating plate, only the first parallel block 331, only the second parallel block 332, or any combination thereof.

[0041]

[0049] It is contemplated that the placement, size, shape, and other qualities of the perforations 360, 362 may be determined based on modeling and / or experimentation. Additionally, for clarity, the openings 362 are illustrated only in the second parallel block 362 in FIG. 3 , but it should be noted that openings 362 are also formed in the first parallel block 331. It is further contemplated that one or more embodiments may not include the perforations 360, 362.

[0042]

[0050] FIG. 4 is a partial schematic cross-sectional side view of an insulating plate 321 in a processing chamber 1000, 2000 according to one or more embodiments. Gas inlets 1014(s) allow the flow of one or more process gases P1 into the process chamber. One or more second inlet openings 1015 allow the flow of purge gas P2 into the upper portion 136b of the process chamber. Perforations (shown in FIG. 3) in the insulating plate 321 allow at least a portion of the purge gas P2 to flow from the upper portion 136b into the lower portion 136a of the process chamber. The flow of process gas P1 directs the flow of purge gas P2 as flow P3 toward the exhaust port of the process chamber. Flow P3 travels along the underside of the insulating plate 321, reducing or preventing the deposition of material from the process gas P1 on the insulating plate 321. The flow rate of flow P3 is determined in part by the flow rate of the purge gas P2 and the location, number, size, and shape of the perforations 360 in the insulating plate 321.

[0043]

[0051] Without being limited by theory, the flow of flow P3 reduces the likelihood of deposition on insulating plate 321 by forming a gas curtain and / or by diluting the concentration of process gas P1 immediately adjacent insulating plate 321. The flow of flow P3 also pushes the flow of process gas P1 toward the substrate surface, increasing the gas velocity delta between the peak velocity and the velocity at the substrate surface.

[0044]

[0052] 5 is a partial schematic top cross-sectional view of a processing chamber 1000, 2000 according to one or more embodiments. A side purge gas flow P4 is illustrated in FIG. 5. The side purge gas flow P4 embodiment can be used in combination with the purge gas flow P3 embodiment shown in FIG.

[0045]

[0053] In Figure 5, parallel blocks 331, 332 are utilized in processing chamber 1000 or 2000. As shown in Figure 3, parallel blocks 331, 332 have perforations 362 for supplying side purge gas flow P4 into lower portion 136a of processing region 136 (see Figures 1 and 2). Parallel blocks 331, 332 are connected to side purge gas inlets 510, which may be connected to purge gas source 162. It is contemplated that one or more embodiments may include only one parallel block 331, 332 with perforations 362, while the other parallel block 331, 332 may not be perforated.

[0046]

[0054] Process gas P1 flows through first inlet opening 1014 into lower portion 136a of processing region 136 and over substrate 102. Side purge gas flow P4 combines with process gas P1 in lower portion 136a of processing region 136. Side purge gas flow P4 is introduced into lower portion 136a perpendicular to the flow of process gas P1. Side purge gas flow P4 focuses the flow of process gas P1 over substrate 102, thus promoting improved deposition uniformity on substrate 102 and reduced deposition of material on the interior surfaces of processing chamber 100. The combined flow of process gas P1 and side purge gas flow P4 exits through gas exhaust outlet 116.

[0047]

[0055] The flow rate of the side purge gas flow P4 can be determined based on modeling and / or experimental studies. It is contemplated that the side purge gas flow P4 can range from 1 L / sec to 20 L / sec.

[0048]

[0056] FIG. 6 is a schematic block diagram of a method 600 for processing a substrate 102 according to one or more embodiments.

[0049]

[0057] Step 610 includes heating a substrate positioned on a substrate support. In one or more embodiments, the substrate is heated using a heat source and the substrate support is a pedestal, such as a susceptor, that absorbs radiation from the heat source and transfers thermal energy to the substrate. In one or more embodiments, the substrate support includes one or more ring segments.

[0050]

[0058] Step 620 includes flowing one or more process gases over the substrate to form one or more layers on the substrate. Flowing the one or more process gases over the substrate includes directing the one or more process gases through rectangular flow openings in a flow guide insert. In one or more embodiments, the one or more process gases are supplied at a pressure of 300 Torr or greater, e.g., in the range of 300 Torr to 600 Torr or greater. In one or more embodiments, the one or more process gases are supplied at a flow rate of less than 5000 standard cubic centimeters per minute (SCCM). In one or more embodiments, the substrate is rotated at a rotational speed of less than 8 revolutions per minute (RPM) while flowing the one or more process gases over the substrate. In one or more embodiments, the rotational speed is 1 RPM. One or more purge gases can be flowed into the processing chamber before, during, and / or after one or more of steps 610, 630, 640, and / or 650.

[0051]

[0059] Step 630 includes flowing one or more purge gases into the processing chamber. The one or more purge gases can be flowed into the processing chamber before, during, and / or after one or more of steps 610, 620, 640, and / or 650. The one or more purge gases can be flowed through perforations in the insulating plates or perforations in the parallel blocks, as described above. In one or more embodiments, step 630 includes simultaneously flowing purge gas from the insulating plates and the parallel blocks throughout step 630. In one or more embodiments, step 630 includes introducing purge gas into the lower part of the processing zone only through the insulating plates or the parallel blocks. In one or more embodiments, step 630 includes flowing purge gas from the insulating plates and the parallel blocks during part of step 630.

[0052]

[0060] During flow of one or more process gases in step 620 and one or more purge gases in step 630, the one or more process gases are thermally decomposed to form an epitaxial layer on the top surface of the substrate.

[0053]

[0061] Step 640 includes evacuating one or more process gases. Step 640 can occur before, during, and / or after one or more of steps 620, 630, and / or 650.

[0054]

[0062] Step 650 includes venting one or more purge gases. Step 650 can occur before, during, and / or after one or more of steps 610, 620, 630, and / or 640.

[0055]

[0063] 7A-7B are schematic, partial perspective views of elements of a flow guide insert 700 according to one or more embodiments.

[0056]

[0064] 7A is a schematic partial perspective view of the liner 2020 and parallel blocks 331, 332 of the flow guide insert 700 according to one or more embodiments. In one or more embodiments, the parallel blocks 331, 332 and the liner 2020 may be manufactured together as a single, integral part of the processing chamber 2000, such that the parallel blocks 331, 332 and the liner 2020 are part of the same opaque body. In one or more embodiments, the parallel blocks 331, 332 are manufactured separately from the liner 2020, and the parallel blocks 331, 332 are fused to the liner 2020 in a fusion process. In one or more embodiments, the parallel blocks 331, 332 are welded to the liner 2020.

[0057]

[0065] 7A, in one or more embodiments, parallel blocks 331, 332 include optional slots 720. It is contemplated that slots 720 may be omitted from parallel blocks 331, 332.

[0058]

[0066] 7B is a schematic, partial perspective view of the insulating plate 321 of the flow guide insert 700 according to one or more embodiments. In one or more embodiments, the insulating plate 321 includes a notch 730. It is contemplated that the notch 730 may be omitted from the insulating plate 321. In one or more embodiments, the notch 730 in the insulating plate 321 and the slot 720 in the parallel blocks 331, 332 are used to position the insulating plate 321 on the parallel blocks 331, 332 and one or more inner ledges 1022 of the liner 2020. For example, a transfer device (such as the head of a lift pin) may extend through the notch 730 and into the slot 720 when the insulating plate 321 is lowered onto the liner 1020.

[0059]

[0067] 7C is a schematic partial perspective view of insulating plate 321 and liner 2020 of flow guide insert 700 according to one or more embodiments. In one or more embodiments, when insulating plate 321 is positioned on parallel blocks 331, 332 and / or one or more inner ledges 1022 and / or when insulating plate 321 is fused to parallel blocks 331, 332 and / or one or more inner ledges 1022, notch 730 is aligned perpendicular to slot 720.

[0060]

[0068] In one or more embodiments, insulating plate 321 is fused to parallel blocks 331, 332 and / or one or more inner ledges 1022. In one or more embodiments, parallel blocks 331, 332 are manufactured separately from insulating plate 321, and parallel blocks 331, 332 (and / or one or more inner ledges 1022) are fused to insulating plate 321 in a fusion process. In one or more embodiments, parallel blocks 331, 332 and / or one or more inner ledges 1022 are welded to insulating plate 321.

[0061]

[0069] The welding process (e.g., fusion bonding) can include using a welding rod made of the same type of material (e.g., an opaque material) as the liner 2020 (e.g., one or more inner ledges 1022), the parallel blocks 331, 332, and / or the insulating plate 321. In one or more embodiments, the welding rod has a diameter of less than 5.0 mm, for example, in the range of 2.0 mm to 3.0 mm. In one or more embodiments, the insulating plate 321 is made of a transparent material (e.g., clear quartz), and the liner 2020 and the parallel blocks 331, 332 are made of an opaque material (e.g., white quartz, black quartz, silicon carbide (SiC), quartz with impregnated particles such as SiC or Si, and / or graphite coated with SiC). The welding rod material can include an opaque material such that it is the same type of material as the parallel blocks 331, 332 and the liner 2020. The welding rod can be positioned adjacent to the insulating plate 321 in an arc-shaped pattern (e.g., a circular pattern). In one or more embodiments, a hydrogen-oxygen (HO) torch may be used in the welding process to melt the welding rod. The welding may be performed at a temperature in the range of 1900° C. to 2000° C. In one or more embodiments, the resulting weld may be polished, acid cleaned, and / or flame polished to remove lumps or knots and produce a smoother weld seam.

[0062]

[0070] Advantages of the present disclosure include reduced process gas bypass, improved deposition thickness; improved deposition uniformity; reduced coating of chamber components (such as insulating plate 321); reduced cleaning; increased throughput and efficiency; and reduced chamber downtime.

[0063]

[0071] It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations, and / or characteristics of processing chamber 1000, processing chamber 2000, flow guide insert 310, method 600, and / or flow guide insert 700 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the advantages described above.

[0064]

[0072] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof as determined by the following claims.

Claims

1. 1. A method of processing a substrate suitable for use in semiconductor manufacturing, comprising: heating a substrate positioned on a substrate support; flowing a purge gas over an insulating plate disposed above the substrate, the flow including diverting a portion of the purge gas below the insulating plate through a plurality of perforations in the insulating plate; flowing one or more process gases over the substrate to deposit material on the substrate, the flow including directing the one or more process gases through one or more flow passages defined at least in part by a space between the insulating plate and the substrate; A method comprising:

2. 10. The method of claim 1, further comprising flowing a second purge gas through one or more perforations in a pair of parallel blocks disposed below the insulating plate, the pair of parallel blocks at least partially defining the space.

3. The method of claim 2 , wherein flowing the second purge gas occurs simultaneously with diverting a portion of the purge gas beneath the insulating plate.

4. The method of claim 1 , wherein the plurality of perforations are uniformly distributed on the insulating plate.

5. 10. The method of claim 1, wherein the plurality of perforations includes a first plurality of perforations having a first diameter and a second plurality of perforations having a second diameter, the first diameter being smaller than the second diameter.

6. The method of claim 5 , wherein the first plurality of perforations and the second plurality of perforations are uniformly distributed on the insulating plate.

7. 10. The method of claim 1, wherein diverting the portion of the purge gas beneath the insulating plate forms a gas curtain adjacent the insulating plate between the insulating plate and the one or more process gases.

8. The method of claim 1 , wherein the purge gas flowing over the insulating plate is directed parallel to the one or more process gases.

9. 1. A method of processing a substrate suitable for use in semiconductor manufacturing, comprising: heating a substrate positioned on a substrate support; flowing a first purge gas onto an insulating plate disposed above the substrate; flowing a second purge gas through one or more perforations in a first parallel block disposed below the insulating plate; flowing a process gas over the substrate to deposit material on the substrate, the flow including directing the process gas through a space between the insulating plate and the substrate; A method comprising:

10. The method of claim 9 , wherein the insulating plate includes a plurality of perforations configured to divert a portion of the first purge gas beneath the insulating plate.

11. The method of claim 9 , wherein the one or more perforations are uniformly distributed on the first parallel block.

12. The method of claim 9 , further comprising flowing a third purge gas through one or more perforations in a second parallel block disposed below the insulating plate.

13. The method of claim 12 , wherein flowing the third purge gas occurs simultaneously with at least a portion of flowing the second purge gas.

14. The method of claim 12 , wherein flowing the third purge gas occurs simultaneously with flowing the second purge gas.

15. 13. The method of claim 12, wherein flowing the first purge gas comprises a first flow rate, flowing the second purge gas comprises a second flow rate, and flowing the third purge gas comprises a third flow rate, and wherein the first flow rate is greater than the second flow rate and the third flow rate.

16. 1. A flow guide applicable for use in semiconductor manufacturing, comprising: an insulating plate having a first surface and a second surface opposite the first surface, the insulating plate having one or more perforations extending through the first surface to the second surface; a first parallel block extending from the second surface, the first parallel block having a first surface substantially perpendicular to the second surface of the insulating plate and having one or more perforations extending through the first surface of the first parallel block; a second parallel block extending from the second surface, the second parallel block being spaced apart from the first parallel block to define a flow path between the first parallel block and the second parallel block, the second parallel block having a first surface substantially perpendicular to the second surface of the insulating plate, and the second parallel block having one or more perforations extending through the first surface; A flow guide comprising:

17. 17. The flow guide of claim 16, wherein the one or more perforations on the insulating plate are uniformly distributed on the insulating plate.

18. 17. The flow guide of claim 16, wherein the one or more perforations on the insulating plate include a first plurality of perforations having a first diameter and a second plurality of perforations having a second diameter, the first diameter being smaller than the second diameter.

19. 20. The flow guide of claim 18, wherein the first parallel block and the second parallel block are fused to the insulating plate.

20. 20. The flow guide of claim 19, wherein the first parallel block and the second parallel block are integrally formed with a liner.

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