Abrasive composition and method of use thereof

Abstract

This disclosure relates to an abrasive composition comprising an abrasive; at least one Si-containing compound comprising an acidic group, an ester thereof, or a salt thereof; and water. This disclosure also features a method of using the abrasive composition for polishing a substrate.

Description

[Technical Field]

[0001] Cross-reference of related applications This application claims priority to U.S. Provisional Patent Application No. 63 / 493,542, filed March 31, 2023, which is incorporated herein by reference in its entirety. [Background technology]

[0002] The semiconductor industry continues to strive for improved chip performance through further miniaturization and weight reduction of devices driven by process and integration innovations. Chemical mechanical polishing / planarization (CMP) is a powerful technology because it enables many complex integration schemes at the transistor level, thereby increasing chip density.

[0003] CMP (Chemical Polishing) is a process used to flatten / level a wafer surface by removing material through a physical process of abrasion, in addition to chemical reactions occurring on the surface. Generally, the CMP process involves applying a CMP slurry (e.g., an aqueous chemical formulation) to the wafer surface while bringing the wafer surface into contact with a polishing pad and moving the polishing pad across the wafer. The slurry typically contains polishing components and dissolved chemical components, which can vary greatly depending on the materials present on the wafer that interact with the slurry and polishing pad during the CMP process (e.g., metals, metal oxides, metal nitrides, dielectric materials such as silicon oxide and silicon nitride, etc.).

[0004] Many of the CMP slurries currently available are specifically designed to remove materials that are more common in older chip designs. However, chip designs and architectures are constantly changing, and certain components in these older CMP slurries may cause a significant and / or unacceptable number of defects. [Overview of the project]

[0005] This summary is provided as an introduction to a set of concepts further described below in a mode for carrying out the invention. This summary is not intended to reveal any important or essential features of the claimed subject matter, nor is it intended to be used as an aid in limiting the scope of the claimed subject matter.

[0006] In this specification, unless otherwise specified, all percentages expressed should be understood as weight percentages relative to the total weight of the chemical mechanical abrasive composition.

[0007] In one embodiment, the present disclosure features an abrasive composition comprising at least one abrasive; at least one first Si-containing compound comprising an acidic group, an ester thereof, or a salt thereof; and water, wherein the at least one first Si-containing compound is not covalently bonded to the at least one abrasive.

[0008] In another embodiment, the present disclosure features a method for polishing a substrate, the method comprising: applying a polishing composition described herein to the surface of the substrate; and bringing a pad into contact with the surface of the substrate and moving the pad relative to the substrate.

[0009] In another embodiment, the present disclosure is characterized by a method for stabilizing an abrasive composition, the method comprising mixing the abrasive composition with at least one Si-containing compound, the abrasive composition comprising an abrasive, and the at least one Si-containing compound comprising an acidic group, an ester thereof, or a salt thereof.

[0010] Other aspects and advantages of the claimed subject matter will be apparent from the following description and the attached claims. [Modes for carrying out the invention]

[0011] The embodiments disclosed herein generally relate to compositions for polishing semiconductor substrates (e.g., wafers) which may contain at least a copper portion, and more specifically, at least a silicon oxide portion and a copper portion, as well as methods for using said compositions. In some embodiments, it is desirable to remove copper at a removal rate greater than half the silicon oxide removal rate. Surprisingly, the inventors have found that the compositions disclosed herein can effectively reduce residue on the polished substrate surface while still effectively maintaining the desired removal rate ratio between copper and silicon oxide. For example, the compositions disclosed herein may be particularly useful for polishing tip node films containing copper, ruthenium liners, barriers (e.g., Ta, TaN), and dielectric materials (e.g., TEOS, low-k, ultra-low-k, etc.).

[0012] In one or more embodiments, the abrasive compositions described herein comprise at least one abrasive, at least one first Si-containing compound, and water, wherein at least a portion (e.g., substantially all) of the at least one first Si-containing compound is not covalently bonded to the at least one abrasive. In one or more embodiments, the abrasive compositions according to this disclosure may comprise about 0.1% to about 50% by weight of an abrasive, about 0.0001% to about 20% by weight of a first Si-containing compound, and the remaining weight percent (e.g., about 30% to about 99.9% by weight) of a solvent (e.g., deionized water). If desired, the polishing compositions described herein may include at least one organic acid in an amount of about 0.02% to about 4% by weight relative to the composition, at least one low-k removal rate inhibitor in an amount of about 0.005% to about 5% by weight relative to the composition, at least one azole-containing rust inhibitor in an amount of about 0.0001% to about 1% by weight relative to the composition, and / or at least one pH adjuster in an amount of about 0.05% to about 10% by weight relative to the composition.

[0013] In one or more embodiments, the Disclosure provides a concentrated polishing composition that can be diluted with water up to 2:1, 4:1, 6:1, 8:1, or 10:1 before use. In other embodiments, the Disclosure provides a use-point (POU) polishing composition for use on a substrate (e.g., a substrate containing copper and silicon oxide), comprising the above polishing composition, water, and optionally an oxidizing agent.

[0014] In one or more embodiments, the POU abrasive composition may comprise about 0.1% to about 12% by weight of an abrasive, optionally about 0.02% to about 1% by weight of an organic acid, about 0.0001% to about 10% by weight of a first Si-containing compound, optionally about 0.1% to about 5% by weight of an oxidizing agent, and about 84% to about 99% by weight of a solvent (e.g., deionized water). Furthermore, the abrasive compositions described herein may optionally comprise at least one low-k removal rate inhibitor in an amount of about 0.005% to about 1% by weight relative to the composition, at least one azole-containing rust inhibitor in an amount of about 0.0001% to about 0.5% by weight relative to the composition, and / or at least one pH adjuster in an amount of about 0.05% to about 5% by weight relative to the composition.

[0015] In one or more embodiments, the concentrated polishing composition may comprise about 1% to about 50% by weight of an abrasive, optionally about 0.2% to about 4% by weight of an organic acid, about 0.001% to about 20% by weight of a first Si-containing compound, and the remaining weight percent (e.g., about 26% to about 99% by weight) of a solvent (e.g., deionized water). Optionally, the polishing compositions described herein may comprise at least one low-k removal rate inhibitor in an amount of about 0.05% to about 5% by weight relative to the composition, at least one azole-containing rust inhibitor in an amount of about 0.001% to about 1% by weight relative to the composition, and / or at least one pH adjuster in an amount of about 0.5% to about 10% by weight relative to the composition.

[0016] In one or more embodiments, the polishing compositions described herein may comprise at least one (e.g., two or three) abrasives. In some embodiments, the at least one abrasive is selected from the group consisting of cationic abrasives, substantially neutral abrasives, and anionic abrasives. In one or more embodiments, the at least one abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products thereof (i.e., co-formed products of alumina, silica, titania, ceria, or zirconia), coated abrasives, surface-modifying abrasives, and mixtures thereof. In some embodiments, the at least one abrasive does not comprise abrasives surface-modified with ceria or Si-containing compounds. In some embodiments, the at least one abrasive is of high purity and may contain less than about 100 ppm of alcohol, less than about 100 ppm of ammonia, and less than about 100 ppb of alkaline cations such as sodium cations. The abrasive may be present in an amount of about 0.1% to about 12% (e.g., about 0.5% to about 10%) or any sub-range thereof, based on the total weight of the POU abrasive composition.

[0017] In some embodiments, at least one abrasive is present in an amount of about 0.1% by weight or more (e.g., about 0.5% by weight or more, about 1% by weight or more, about 2% by weight or more, about 4% by weight or more, about 5% by weight or more, about 10% by weight or more, about 12% by weight or more, about 15% by weight or more, or about 20% by weight or more) to about 50% by weight or less (e.g., about 45% by weight or less, about 40% by weight or less, about 35% by weight or less, about 30% by weight or less, about 25% by weight or less, about 20% by weight or less, about 15% by weight or less, about 12% by weight or less, about 10% by weight or less, or about 5% by weight or less) relative to the abrasive composition described herein.

[0018] In one or more embodiments, at least one abrasive may have an average particle size of about 1 nm or more (e.g., about 5 nm or more, about 10 nm or more, about 20 nm or more, about 40 nm or more, about 50 nm or more, about 60 nm or more, about 80 nm, or about 100 nm or more) to about 1000 nm or less (e.g., about 800 nm or less, about 600 nm or less, about 500 nm or less, about 400 nm or less, about 200 nm or less, about 150 nm, or about 100 nm or less). As used herein, the average particle size (MPS) is determined by dynamic light scattering.

[0019] In one or more embodiments, the polishing composition described herein may include at least one (e.g., two or three) first Si-containing compounds. In one or more embodiments, at least one first Si-containing compound includes at least one acidic group, its ester, or its salt. In one or more embodiments, the acidic groups on the Si-containing compound are chemically different. In one or more embodiments, the first Si-containing compound includes a carboxylic acid group, its ester, or its salt (e.g., carboxylate group); a sulfonic acid group, its ester, or its salt (e.g., sulfonate group); or a phosphonic acid group, its ester, or its salt (e.g., phosphonate group). In one or more embodiments, at least one first Si-containing material is selected from the group consisting of 3-(trihydroxysilyl)propylmethylphosphonate, 3-(trihydroxysilyl)-1-propanesulfonic acid, carboxyethylsilanetriol, (2-diethylphosphatoethyl)triethoxysilane, [3-(trihydroxysilyl)propyl](methyl)phosphate, 3-(trimethylsilyl)-1-propanesulfonic acid, 3-{[dimethyl(3-trimethoxysilyl)propyl]ammonio}-propane-1-sulfonate, their salts, or combinations thereof. Generally, at least a portion (e.g., substantially all) of at least one Si-containing compound is not covalently bonded to at least one abrasive. In some non-limiting embodiments, at least one first Si-containing compound includes (1) at least one acidic group, its ester, or its salt (e.g., any of those described herein) and (2) at least one alkoxy group (e.g., -OR, where R is a linear or branched alkyl that may be substituted or unsubstituted and may be cyclic or acyclic), an alkyl group (e.g., -R, where R is a linear or branched alkyl that may be substituted or unsubstituted and may be cyclic or acyclic), a hydroxyl group (e.g., -OH or its salt), hydrogen (e.g., -H), a halo group (e.g., -X, where X is fluoro, chloro, bromo, or iodo), or any combination thereof.

[0020] In one or more embodiments, at least one first Si-containing compound is present in the polishing composition in an amount from about 0.0001 wt% to 20 wt%. For example, at least one first Si-containing compound can be present in the polishing composition described herein in an amount of about 0.0001 wt% or more (e.g., about 0.0005 wt% or more, about 0.001 wt% or more, about 0.005 wt% or more, about 0.01 wt% or more, about 0.05 wt% or more, about 0.1 wt% or more, about 0.5 wt% or more, about 1 wt% or more, about 2.5 wt% or more, or about 3 wt% or more) to about 20 wt% or less (e.g., about 15 wt% or less, about 12.5 wt% or less, about 10 wt% or less, about 7.5 wt% or less, about 5 wt% or less, about 2.5 wt% or less, or about 1 wt% or less).

[0021] Without being bound by theory, the inventors have surprisingly discovered that the first Si-containing compound can (1) stabilize the abrasive in the polishing composition, thereby extending the shelf life of the polishing composition, and / or (2) reduce the number of defects on the polished surface.

[0022] In one or more embodiments, the polishing compositions described herein may optionally further include at least one (e.g., two or three) second Si-containing compounds different from the first Si-containing compound. In some embodiments, the second Si-containing compound does not contain an acidic group, its ester, or its salt. In one or more embodiments, the second Si-containing compound may be a tetraalkyl orthosilicate. In some embodiments, the second Si-containing compound may be selected from the group consisting of tetramethyl orthosilicate (TMOS), tetraethyl orthosilicate (TEOS), potassium methyl siliconate, (3-glycidyloxypropyl)trimethoxysilane, triethoxysilylpropoxy(polyethyleneoxy)dodecanoate, (3-triethoxysilyl)propyl succinic anhydride, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, ureidopropyltriethoxysilane, trimethylmethoxysilane, N-trimethoxysilylpropyl-N,N,N-trimethylammonium chloride, dimethyldimethoxysilane, vinyltrimethoxysilane, and potassium silicate.

[0023] In one or more embodiments, at least one second Si-containing compound may be present in an amount of about 0.0001% by weight or more (e.g., about 0.0005% by weight or more, about 0.001% by weight or more, about 0.005% by weight or more, about 0.01% by weight or more, about 0.05% by weight or more, about 0.1% by weight or more, about 0.5% by weight or more, about 1% by weight or more, about 2.5% by weight or more, or about 3% by weight or more) to about 10% by weight or less (e.g., about 8% by weight or less, about 6% by weight or less, about 5% by weight or less, about 4% by weight or less, about 2% by weight or less, or about 1% by weight or less) relative to the polishing composition described herein.

[0024] While not bound by theory, the inventors have surprisingly discovered that when a substrate is polished with the polishing composition described herein, a second Si-containing compound can reduce the corrosion of certain materials (e.g., Cu) in the semiconductor substrate.

[0025] Generally, the first and second Si-containing compounds are not dissolved or solubilized in the polishing compositions described herein, but rather dispersed or suspended in the polishing compositions (e.g., in the form of particles or droplets).

[0026] In one or more embodiments, the abrasive compositions described herein may optionally include at least one (e.g., two or three) pH adjusters. In one or more embodiments, the at least one pH adjuster is selected from inorganic bases, organic bases, and mixtures thereof. In some embodiments, the inorganic base may be selected from the group consisting of ammonium hydroxide, sodium hydroxide, potassium hydroxide, cesium hydroxide, rubidium hydroxide, and any combination thereof. In one or more embodiments, the organic base is a quaternary ammonium hydroxide (e.g., alkylammonium hydroxides such as tetraalkylammonium hydroxide) or a quaternary phosphonium hydroxide (e.g., alkylphosphonium hydroxides such as tetraalkylphosphonium hydroxide). In one or more embodiments, the quaternary ammonium hydroxide is selected from the group consisting of tetrabutylammonium hydroxide, ethyltrimethylammonium hydroxide, tetrapropylammonium hydroxide, tetraethylammonium hydroxide, tetramethylammonium hydroxide, diethyldimethylammonium hydroxide, dimethyldipropylammonium hydroxide, benzyltrimethylammonium hydroxide, and any combination thereof. In one or more embodiments, the quaternary phosphonium hydroxide is selected from the group consisting of tetramethylphosphonium hydroxide, tetraethylphosphonium hydroxide, tetrapropylphosphonium hydroxide, tetrabutylphosphonium hydroxide, tetrapentylphosphonium hydroxide, triethylmethylphosphonium hydroxide, tetrakis(hydroxymethyl)phosphonium hydroxide, tetraphenylphosphonium hydroxide, and any combination thereof. In one or more embodiments, the quaternary ammonium hydroxide or quaternary phosphonium hydroxide does not contain a covalently bonded hydroxyl group (e.g., does not contain choline hydroxide or tris(2-hydroxyethyl)methylammonium hydroxide).

[0027] In one or more embodiments, the abrasive composition optionally comprises an organic base that does not contain a quaternary ammonium hydroxide or a quaternary phosphonium hydroxide. In one or more embodiments, the organic base that does not contain a quaternary ammonium hydroxide or a quaternary phosphonium hydroxide is selected from the group consisting of alkylamines, amino alcohols, guanidines, cyclic amines, and mixtures thereof. In one or more embodiments, the organic bases that do not contain quaternary ammonium hydroxides or quaternary phosphonium hydroxides are monomethylamine, dimethylamine, trimethylamine, monoethylamine, diethylamine, (triethyl)amine, monopropylamine, dipropylamine, tri-n-propylamine, monobutylamine, dibutylamine, tributylamine, isopropylamine, ethanolamine, diethanolamine, triethanolamine, 2-amino-2-methyl-1-propanol, 2-amino-2-methyl-1,3-propanediol, 2-dimethylamino-2-methylpropanol, tris(hydroxymethyl)aminomethane, 2-amino-2-ethyl-1,3-propanediol, 3-amino-4-octano Selected from the group consisting of ethanol, aminopropyldiethanolamine, 2-[(3-aminopropyl)methylamino]ethanol, 2-(2-aminoethoxy)ethanol, 2-(3-aminopropylamino)ethanol, 2-dimethylaminoethanol, cysteamine, 1,3-diphenylguanidine, 1,1,3,3-tetramethylguanidine, 1,2,3-triphenylguanidine, 1-(tert-butoxycarbonyl)guanidine, creatinol phosphate, N-tosyl-L-arginine, 1,3-di-o-tolylguanidine, 1,8-diazabicyclo[2.2.2]octane, 1,8-diazabicyclo[4.3.0]nona-5-ene, 1,8-diazabicyclo[5.4.0]unde-7-ene, and mixtures thereof.

[0028] In one or more embodiments, the amount of pH adjuster (e.g., at least one inorganic base and at least one organic base (e.g., including a second organic base used as desired)) is about 0.05% by weight or more (e.g., about 0.1% by weight or more, about 0.2% by weight or more, about 0.4% by weight or more, about 0.5% by weight or more, about 0.8% by weight or more, about 1% by weight or more, about 2% by weight or more, about 5% by weight or more, or about 7% by weight or more) to about 10% by weight or less (e.g., about 9% by weight or less, about 8% by weight or less, about 7% by weight or less, about 6% by weight or less, about 5% by weight or less, about 4% by weight or less, about 3% by weight or less, about 2% by weight or less, about 1% by weight or less, about 0.5% by weight or less, about 0.2% by weight or less, or about 0.1% by weight or less) relative to the polishing composition described herein.

[0029] In one or more embodiments, the pH value of the abrasive composition may be within the range of about 2 or higher (e.g., about 2.5 or higher, about 3 or higher, about 3.5 or higher, about 4 or higher, about 4.5 or higher, about 5 or higher, about 5.5 or higher, about 6 or higher, about 6.5 or higher, about 7 or higher, about 7.5 or higher, about 8 or higher, about 8.5 or higher, about 9 or higher, about 9.5 or higher, about 10 or higher, about 10.5 or higher, about 11 or higher, about 11.5, or about 12 or higher) to about 14 or lower (e.g., about 13.5 or lower, about 13 or lower, about 12.5 or lower, about 12 or lower, about 11.5 or lower, about 11 or lower, about 10.5 or higher, about 10 or lower, about 9.5 or lower, about 9 or lower, about 8.5 or lower, about 8 or lower, about 7.5 or lower, about 7 or lower, about 6.5 or lower, about 6 or lower, about 5.5 or lower, about 5, or about 4.5 or lower). In one or more embodiments, the pH value of the abrasive composition may be alkaline (i.e., greater than 7). Although not theoretically bound, abrasive compositions with a pH lower than 2 are thought to significantly increase corrosion and particulate residue, and abrasive compositions with a pH higher than 14 may affect the stability of the abrasive suspension, significantly increasing the roughness of the film polished with such a composition and degrading the overall quality. To obtain a desired pH, the relative concentrations of the components in the abrasive compositions described herein may be adjusted.

[0030] In one or more embodiments, the abrasive compositions described herein may optionally contain at least one (e.g., two or three) organic acids or salts thereof. In some embodiments, the at least one organic acid is selected from carboxylic acids, amino acids, sulfonic acids, phosphoric acids, or phosphonic acids, or salts thereof. In some embodiments, the organic acid or salt thereof is gluconic acid, lactic acid, citric acid, tartaric acid, malic acid, glycolic acid, malonic acid, formic acid, oxalic acid, acetic acid, propionic acid, peracetic acid, succinic acid, potassium acetate, potassium citrate, aminoacetic acid, phenoxyacetic acid, bicine, diglycolic acid, glyceric acid, tricine, alanine, histidine, valine, phenylalanine, proline, glutamine, aspartic acid, glutamic acid, arginine, lysine, tyrosine Benzoic acid, 1,2-ethanedisulfonic acid, 4-amino-3-hydroxy-1-naphthalenesulfonic acid, 8-hydroxyquinoline-5-sulfonic acid, aminomethanesulfonic acid, benzenesulfonic acid, hydroxylamine-O-sulfonic acid, methanesulfonic acid, m-xylene-4-sulfonic acid, poly(4-styrenesulfonic acid), polyanetholesulfonic acid, p-toluenesulfonic acid, trifluoromethanesulfonic acid, ethyl phosphate, cyanoethyl phosphate Selected from the group consisting of acids, phenyl phosphoric acid, vinyl phosphoric acid, vinylphosphonic acid, poly(vinylphosphonic acid), 1-hydroxyethane-1,1-diphosphonic acid, nitrilotri(methylphosphonic acid), diethylenetriaminepentakis(methylphosphonic acid), N,N,N',N'-ethylenediaminetetrakis(methylenephosphonic acid), n-hexylphosphonic acid, benzylphosphonic acid, phenylphosphonic acid, ethylenediaminetetraacetic acid, iminodiacetic acid, N-hydroxyethyl-ethylenediaminetriacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, triethylenetetraaminehexaacetic acid, diaminocyclohexanetetraacetic acid, nitrilotrimethylphosphonic acid, ethylenediaminetetra(methylenephosphonic acid), 1-hydroxyethylidene-1,1-diphosphonic acid, diethylenetriaminepenta(methylenephosphonic acid), salts thereof, and mixtures thereof.

[0031] In one or more embodiments, at least one organic acid is present in an amount of about 0.02% by weight or more (e.g., about 0.05% by weight or more, about 0.1% by weight or more, about 0.2% by weight or more, about 0.4% by weight or more, about 0.5% by weight or more, about 0.6% by weight or more, about 0.8% by weight or more, about 1% by weight or more, about 1.5% by weight or more, or about 2% by weight or more) to about 4% by weight or less (e.g., about 3.5% by weight or less, about 3% by weight or less, about 2.5% by weight or less, about 2% by weight or less, about 1.5% by weight or less, or about 1% by weight or less) relative to the abrasive composition described herein.

[0032] In one or more embodiments, the abrasive compositions described herein may optionally include at least one (e.g., two or three) low-k removal rate inhibitors. In some embodiments, the at least one low-k removal rate inhibitor is a nonionic surfactant. In some embodiments, the nonionic surfactant is the only low-k removal rate inhibitor in the abrasive composition. In one or more embodiments, the nonionic surfactant is selected from the group consisting of alcohol alkoxylates, alkylphenol alkoxylates, tristyrylphenol alkoxylates, sorbitan ester alkoxylates, polyalkoxylates, polyalkylene oxide block copolymers, alkoxylated diamines, and mixtures thereof. In one or more embodiments, the nonionic surfactant is a polymer having a number-average molecular weight of about 1000 g / mol or more (e.g., about 2500 g / mol or more, about 5000 g / mol or more, about 7500 g / mol or more, or about 10,000 g / mol or more). In one or more embodiments, the nonionic surfactant is a polymer having a number-average molecular weight of about 1,000,000 g / mol or less (e.g., about 750,000 g / mol or less, about 500,000 g / mol or less, about 250,000 g / mol or less, or about 100,000 g / mol or less). In one or more embodiments, the alkoxylate group of the alkoxylated nonionic surfactant is an ethoxylate group, a propoxylate group, or a combination of an ethoxylate group and a propoxylate group. Although not bound by theory, it is surprising that nonionic surfactants (e.g., those described above) can be used as low-k removal rate inhibitors in the polishing compositions described herein to reduce or minimize the removal rate of low-k films (e.g., carbon-doped silicon oxide films or silicon oxycarbide films) in semiconductor substrates. In some embodiments, the polishing compositions described herein do not contain alkylphenol alkoxylates.

[0033] In some embodiments, at least one low-k removal rate inhibitor is present in an amount of about 0.005% by weight or more (e.g., about 0.01% by weight or more, about 0.05% by weight or more, about 0.1% by weight or more, about 0.5% by weight or more, about 1% by weight or more, about 1.5% by weight or more, about 2% by weight or more, or about 3% by weight or more) to about 5% by weight or less (e.g., about 4.5% by weight or less, about 4% by weight or less, about 3.5% by weight or less, about 3% by weight or less, about 2.5% by weight or less, about 2% by weight or less, about 1.5% by weight or less, about 1% by weight or less, about 0.5% by weight or less, or about 0.1% by weight or less) relative to the abrasive composition described herein.

[0034] In one or more embodiments, the abrasive compositions described herein may optionally include at least one (e.g., two or three) azole-containing rust inhibitors. In some embodiments, the at least one azole-containing rust inhibitor is selected from the group consisting of substituted or unsubstituted triazoles, substituted or unsubstituted tetrazoles, substituted or unsubstituted benzotriazoles, substituted or unsubstituted pyrazoles, substituted or unsubstituted imidazoles, substituted or unsubstituted benzimidazoles, substituted or unsubstituted thiadiazoles, substituted or unsubstituted thiabendazoles, substituted or unsubstituted adenines, substituted or unsubstituted xanthines, and substituted or unsubstituted guanines.In one or more embodiments, the azole-containing rust inhibitor is 1,2,4-triazole, 1,2,3-triazole, tetrazole, benzotriazole, tolyltriazole, methylbenzotriazole (e.g., 1-methylbenzotriazole, 4-methylbenzotriazole, or 5-methylbenzotriazole), ethylbenzotriazole (e.g., 1-ethylbenzotriazole), propylbenzotriazole (e.g., 1-propylbenzotriazole), butylbenzotriazole (e.g., 1-butylbenzotriazole or 5-butylbenzotriazole), pentylbenzotriazole (e.g., 1-pentylbenzotriazole), hexylbenzotriazole (e.g., 1-hexylbenzotriazole or 5-hexylbenzotriazole), dimethylbenzotriazole (e.g., 5,6-dimethylbenzotriazole), or chlorobenzotriazole. The following can be selected from the group consisting of (e.g., 5-chlorobenzotriazole), dichlorobenzotriazole (e.g., 5,6-dichlorobenzotriazole), chloromethylbenzotriazole (e.g., 1-(chloromethyl)-1-H-benzotriazole), chloroethylbenzotriazole, phenylbenzotriazole, benzylbenzotriazole, aminotriazole, aminobenzimidazole, aminotetrazole, pyrazole, imidazole, adenine, xanthine, guanine, benzimidazole, thiabendazole, 1-hydroxybenzotriazole, 2-methylbenzothiazole, 2-aminobenzimidazole, 2-amino-5-ethyl-1,3,4-thiadiazole, 3,5-diamino-1,2,4-triazole, 3-amino-5-methylpyrazole, 4-amino-4H-1,2,4-triazole, and mixtures thereof. While not bound by theory, it is believed that azole-containing rust inhibitors (e.g., those mentioned above) can significantly reduce or minimize the corrosion and removal rate of metals (e.g., copper) in semiconductor substrates.

[0035] In some embodiments, at least one azole-containing rust inhibitor is present in an amount of about 0.0001% by weight or more (e.g., about 0.0002% by weight or more, about 0.0005% by weight or more, about 0.001% by weight or more, about 0.002% by weight or more, about 0.005% by weight or more, about 0.01% by weight or more, about 0.02% by weight or more, about 0.05% by weight or more, about 0.1% by weight or more, about 0.2% by weight or more, or about 0.5% by weight or more) to about 1% by weight or less (e.g., about 0.8% by weight or less, about 0.6% by weight or less, about 0.5% by weight or less, about 0.4% by weight or less, about 0.2% by weight or less, about 0.1% by weight or less, about 0.05% by weight or less, about 0.02% by weight or less, about 0.01% by weight or less, or about 0.005% by weight or less) relative to the abrasive composition described herein.

[0036] In one or more embodiments, the abrasive compositions described herein may optionally contain at least one (e.g., two or three) oxidizing agents. In some embodiments, the oxidizing agent may be added when diluting a concentrated slurry to form a POU slurry. The oxidizing agent may be selected from the group consisting of hydrogen peroxide, ammonium persulfate, silver nitrate (AgNO3), ferric nitrate or ferric chloride, peracids or salts, ozonated water, potassium ferricyanide, potassium dichromate, potassium iodate, potassium bromate, potassium periodate, periodic acid, vanadium trioxide, hypochlorous acid, sodium hypochlorite, potassium hypochlorite, calcium hypochlorite, magnesium hypochlorite, ferric nitrate, potassium permanganate, other inorganic or organic peroxides, and mixtures thereof. In some embodiments, the oxidizing agent is hydrogen peroxide.

[0037] In some embodiments, the amount of the oxidizing agent is about 0.05% by weight or more (e.g., about 0.1% by weight or more, about 0.2% by weight or more, about 0.4% by weight or more, about 0.5% by weight or more, about 1% by weight or more, about 1.5% by weight or more, about 2% by weight or more, about 2.5% by weight or more, about 3% by weight or more, about 3.5% by weight or more, about 4% by weight or more, or about 4.5% by weight or more) to about 5% by weight or less (e.g., about 4.5% by weight or less, about 4% by weight or less, about 3.5% by weight or less, about 3% by weight or less, about 2.5% by weight or less, about 2% by weight or less, about 1.5% by weight or less, about 1% by weight or less, about 0.5% by weight or less, or about 0.1% by weight or less) relative to the polishing composition described herein. In some embodiments, although not theoretically bound, the oxidizing agent is thought to be able to assist in the removal of metal films by forming a metal complex with a chelating agent so that the metal can be removed during the CMP process. In some embodiments, though not theoretically bound, it is believed that the metal complex formed between the metal film and the oxidizing agent can form a passivation layer that can protect the metal from corrosion. In some embodiments, the oxidizing agent may reduce the shelf life of the polishing composition. In such embodiments, the oxidizing agent may be added to the polishing composition at the point of use, immediately before polishing.

[0038] In one or more embodiments, the polishing compositions described herein may optionally include at least one (e.g., two or three) nitride removal rate reducing agents. In some embodiments, the nitride removal rate reducing agents are C4-C 40 The compound comprises a hydrophobic moiety containing a hydrocarbon group (e.g., an alkyl group and / or an alkenyl group) and a hydrophilic moiety containing at least one group selected from the group consisting of sulfinite, sulfate, sulfonate, carboxylate, phosphate, and phosphonate groups. In one or more embodiments, the hydrophobic moiety and the hydrophilic moiety each contain 0 to 10 (e.g., 1, 2, 3, 4, 5, 6, 7, 8, or 9) alkylene oxide groups (e.g., -(CH2) nIt is separated by an O-group, where n can be 1, 2, 3, or 4. In one or more embodiments, the nitride removal rate reducing agent does not have an alkylene oxide group that separates a hydrophobic portion and a hydrophilic portion. Without being bound by theory, the presence of an alkylene oxide group in the nitride removal rate reducing agent may cause problems with slurry stability and may increase the rate of silicon nitride removal, so it is considered unfavorable in some embodiments.

[0039] In one or more embodiments, the nitride removal rate reducing agent has 4 or more carbon atoms (C4) (e.g., 6 or more carbon atoms (C6), 8 or more carbon atoms (C8), 10 or more carbon atoms (C 10 ), 12 or more carbon atoms (C 12 ), 14 or more carbon atoms (C 14 ), 16 or more carbon atoms (C 16 ), 18 or more carbon atoms (C 18 ), 20 or more carbon atoms (C 20 ), or 22 or more carbon atoms (C 22 )) and / or 40 or fewer carbon atoms (C 40 ) (e.g., 38 or fewer carbon atoms (C 38 ), 36 or fewer carbon atoms (C 36 ), 34 or fewer carbon atoms (C 34 ), 32 or fewer carbon atoms (C 32 ), 30 or fewer carbon atoms (C 30 ), 28 or fewer carbon atoms (C 28 ), 26 or fewer carbon atoms (C 26 ), 24 or fewer carbon atoms (C 24 ), or 22 or fewer carbon atoms (C 22The hydrocarbon group has a hydrophobic portion containing a hydrocarbon group. The hydrocarbon group as referred to herein means a group containing only carbon and hydrogen atoms and may include both saturated groups (e.g., linear, branched, or cyclic alkyl groups) and unsaturated groups (e.g., linear, branched, or cyclic alkenyl groups; linear, branched, or cyclic alkynyl groups; or aromatic groups (e.g., phenyl or naphthyl)). In one or more embodiments, the hydrophilic portion of the nitride removal rate reducer contains at least one group selected from phosphate groups and phosphonate groups. It should be noted that the term "phosphonate group" is explicitly intended to include phosphonic acid groups.

[0040] In one or more embodiments, the nitride removal rate reducing agent is selected from the group consisting of naphthalene sulfonic acid-formalin condensate, lauryl phosphate, myristyl phosphate, stearyl phosphate, octadecylphosphonic acid, oleyl phosphate, behenyl phosphate, octadecyl sulfate, rasseryl phosphate, oleth-3-phosphate, and oleth-10-phosphate, and combinations thereof.

[0041] In one or more embodiments, a nitride removal rate reducing agent may be included in the polishing composition described herein in an amount of about 0.1 ppm or more (e.g., about 0.5 ppm or more, about 1 ppm or more, about 5 ppm or more, about 10 ppm or more, about 25 ppm or more, about 50 ppm or more, about 75 ppm or more, or about 100 ppm or more) to about 1000 ppm or less (e.g., about 900 ppm or less, about 800 ppm or less, about 700 ppm or less, about 600 ppm or less, about 500 ppm or less, or about 250 ppm or less) based on the total weight of the composition.

[0042] In some embodiments, the abrasive compositions described herein may include a solvent such as water (e.g., the main solvent). In some embodiments, the amount of solvent (e.g., water) relative to the abrasive composition described herein is about 20% by weight or more (e.g., about 25% by weight or more, about 30% by weight or more, about 35% by weight or more, about 40% by weight or more, about 45% by weight or more, about 50% by weight or more, about 55% by weight or more, about 60% by weight or more, about 65% by weight or more, about 70% by weight or more, about 75% by weight or more, about 80% by weight or more, about 85% by weight or more, about 90% by weight or more, about 92% by weight or more, about 94% by weight or more, about 95% by weight or more, or about 97% by weight or more) to about 99% by weight or less (e.g., about 98% by weight or less, about 96% by weight or less, about 94% by weight or less, about 92% by weight or less, about 90% by weight or less, about 85% by weight or less, about 80% by weight or less, about 75% by weight or less, about 70% by weight or less, or about 65% by weight or less).

[0043] In one or more embodiments, a secondary solvent (e.g., organic solvent) may be optionally included in the abrasive composition of the Disclosure (e.g., POU or concentrated abrasive composition) that can assist in the dissolution of one or more components (e.g., azole-containing rust inhibitors) in the abrasive composition. In one or more embodiments, the secondary solvent may be one or more alcohols, alkylene glycols, or alkylene glycol ethers. In one or more embodiments, the secondary solvent may include one or more solvents selected from the group consisting of ethanol, 1-propanol, 2-propanol, n-butanol, propylene glycol, 2-methoxyethanol, 2-ethoxyethanol, propylene glycol propyl ether, and ethylene glycol.

[0044] In some embodiments, the amount of the secondary solvent is about 0.0025% by weight or more (e.g., about 0.005% by weight or more, about 0.01% by weight or more, about 0.02% by weight or more, about 0.05% by weight or more, about 0.1% by weight or more, about 0.2% by weight or more, about 0.4% by weight or more, about 0.6% by weight or more, about 0.8% by weight or more, or about 1% by weight or more) to about 2% by weight or less (e.g., about 1.8% by weight or less, about 1.6% by weight or less, about 1.5% by weight or less, about 1.4% by weight or less, about 1.2% by weight or less, about 1% by weight or less, about 0.8% by weight or less, about 0.6% by weight or less, about 0.5% by weight or less, or about 0.1% by weight or less) relative to the polishing composition described herein.

[0045] In one or more embodiments, the polishing compositions described herein include an organic solvent, a pH adjuster, a quaternary ammonium compound (e.g., salts such as tetraalkylammonium salts and hydroxides such as tetraalkylammonium hydroxide), an alkaline base (e.g., alkali hydroxide), a fluorine-containing compound (e.g., fluoride compounds or fluorinated compounds (fluorinated polymers / surfactants, etc.)), a silicon-containing compound such as silane (e.g., alkoxysilanes including TEOS and TMOS, in which case the alkoxysilane may contain a compound lacking at least one acidic group, an ester thereof, or a salt thereof (e.g., any of those described herein), or the alkoxysilane may contain (1) at least one alkyl group (e.g., -R, where R may be substituted or unsubstituted, cyclic or acyclic, linear or branched alkyl) and (2) alkoxy Compounds may include a group (e.g., -OR, where R is a linear or branched alkyl group which may be substituted or unsubstituted, and which may be cyclic or acyclic), an alkyl group (e.g., -R, where R is a linear or branched alkyl group which may be substituted or unsubstituted, and which may be cyclic or acyclic), a hydroxyl group (e.g., -OH or a salt thereof), hydrogen (e.g., -H), a halo group (e.g., -X, where X is fluoro, chloro, bromo, or iodine), or a further group selected from the group consisting of any combination thereof; and aminosilanes including aminopropyltriethoxysilane, in which case the aminosilane may include a compound lacking at least one acidic group, an ester thereof, or a salt thereof (e.g., any of those described herein), or the aminosilane may include (1) at least one amino group (e.g., -NR N1 R N2 or -NR N1 - and in the formula, R N1 and R N2Each of these may independently be H, or a linear or branched alkyl group which may be substituted or unsubstituted, and which may be cyclic or acyclic) and (2) an alkoxy group (e.g., -OR, where R is a linear or branched alkyl group which may be substituted or unsubstituted, and which may be cyclic or acyclic), an alkyl group (e.g., -R, where R is a linear or branched alkyl group which may be substituted or unsubstituted, and which may be cyclic or acyclic), a hydroxyl group (e.g., -OH or a salt thereof), hydrogen (e.g., -H), a halo group (e.g., -X, where X is fluoro, chloro, bromo, or iodine), or a further group selected from the group consisting of any combination thereof), nitrogen-containing compounds (e.g., amino acids, amines, imines (e.g., 1,8-diazabicyclo[5.4.0]-7-undecene (DBU) and 1,5-diazabicyclo[4 .3.0] The material may not substantially contain one or more of the following specific components: amidines (such as nona-5-ene (DBN)), amides, or imides, polyols, salts (e.g., halide salts or metal salts), polymers (e.g., nonionic polymers, cationic polymers, anionic polymers, or water-soluble polymers), inorganic acids (e.g., hydrochloric acid, sulfuric acid, phosphoric acid, or nitric acid), surfactants (e.g., cationic surfactants, anionic surfactants, nonpolymeric surfactants, or nonionic surfactants), zwitterionic compounds, plasticizers, oxidizing agents (e.g., hydrogen peroxide and / or periodic acid), rust inhibitors (e.g., azole or nonazole rust inhibitors), electrolytes (e.g., polymeric electrolytes), dienoic acid (e.g., sorbic acid), and / or certain abrasives (e.g., polymeric abrasives, fumed silica, ceria abrasives, nonionic abrasives, surface-modifying abrasives, negative / positive charged abrasives, or ceramic abrasive composites). Examples of halide salts that may be excluded from the abrasive composition include alkali metal halides (e.g., sodium halide or potassium halide) or ammonium halides (e.g., ammonium chloride), which may be fluorides, chlorides, bromides, or iodides. As used herein, "substantially absent" components of the abrasive composition mean components that are not intentionally added to the abrasive composition.In some embodiments, the abrasive compositions described herein may contain one or more of the above components that are substantially absent from the abrasive composition in amounts of about 1000 ppm or less (e.g., about 500 ppm or less, about 250 ppm or less, about 100 ppm or less, about 50 ppm or less, about 10 ppm or less, or about 1 ppm or less). In some embodiments, the abrasive compositions described herein may not contain one or more of the above components at all.

[0046] In one or more embodiments, the abrasive compositions described herein may have a ratio of the removal rate of Cu to the removal rate of silicon dioxide (e.g., TEOS) of about 0.5:1 or greater (e.g., about 0.6:1 or greater, about 0.7:1 or greater, or about 0.8:1 or greater) to about 2:1 or less (e.g., about 1.8:1 or less, about 1.6:1 or less, about 1.4:1 or less, about 1.2:1 or less, or about 1:1 or less) (i.e., removal rate selectivity). It should be noted that the term “silicon dioxide” as described herein is explicitly intended to include both undoped and doped silicon dioxide. In some embodiments, silicon dioxide may be doped with at least one dopant selected from carbon, nitrogen, oxygen, hydrogen, or any other dopant known for silicon dioxide. Some examples of silicon oxide films on semiconductor substrates include TEOS (tetraethyl orthosilicate), SiOC, SiOCn, SiCH, SiOH, and SiON. In one or more embodiments, the above-described ratios and / or removal rates may be applicable when measuring the removal rate when polishing either a blanket wafer or a patterned wafer (e.g., a wafer containing a conductive layer, a barrier layer, and / or a dielectric layer).

[0047] In one or more embodiments, the total number of defects on a 12-inch diameter (i.e., approximately 300 mm diameter) wafer (e.g., on the copper surface of the wafer) is 800 or less (e.g., 700 or less, 600 or less, 500 or less, 400 or less, 300 or less, 250 or less, 200 or less, 150 or less, 100 or less, or 50 or less) after polishing the wafer with the polishing composition according to the Disclosure. In one or more embodiments, defects may be due to scratches, organic residues, particulate contaminants (e.g., abrasives), and combinations thereof. Generally, defects can be analyzed and classified by counting using a laser scattering inspection system (e.g., KLA XUV Advanced Inspection Tool) and then examining images of the polished wafer taken using a scanning electron microscope (SEM). In one or more embodiments, the defects to be counted are defects with a size of approximately 100 nm or larger.

[0048] This disclosure also intends to describe methods of using any of the above-described abrasive compositions (e.g., concentrates or POU slurries). When using concentrates, the method may include the steps of diluting the concentrate to form a POU slurry (e.g., at least twice), and subsequently bringing a substrate surface containing at least partially copper into contact with the POU slurry. In some embodiments, an oxidizing agent may be added to the slurry before or after dilution. When using POU slurries, the method may include the steps of bringing a substrate surface containing at least partially copper into contact with the abrasive composition.

[0049] In one or more embodiments, the Disclosure features a polishing method which may include: applying a polishing composition according to the Disclosure to the surface of a substrate (e.g., a wafer having at least copper and silicon oxide on its surface); and bringing a pad into contact with the surface of the substrate and moving the pad relative to the substrate. Furthermore, in some embodiments, after polishing the substrate with the polishing composition described herein, the polished substrate may undergo a rinse polishing process, in which a composition comprising all components of the polishing composition described herein except the abrasive is applied to the polished substrate in a polishing tool, and a pad of the polishing tool is brought into contact with the substrate and moved relative to the substrate to produce a rinse polished substrate. In some embodiments, after the polishing process and / or rinse polishing process, the substrate may be removed from the polishing tool and subjected to post-CMP cleaning in a cleaning tool (e.g., a brush scrubber or a spin rinse dryer).

[0050] In some embodiments, the methods of using the polishing compositions described herein may further include manufacturing a semiconductor device from a substrate treated with the polishing composition through one or more steps. For example, a semiconductor device can be manufactured from a substrate treated with the polishing composition described herein using photolithography, ion implantation, dry / wet etching, plasma ashing, deposition (e.g., PVD, CVD, ALD, ECD), wafer mounting, dicing, packaging, and testing.

[0051] In one or more embodiments, the Disclosure features a method for stabilizing an abrasive composition. In some embodiments, the method may include mixing the abrasive composition (e.g., a conventional abrasive composition containing an abrasive) with at least one Si-containing compound having an acidic group, an ester thereof, or a salt thereof, such as the first Si-containing compound described herein.

[0052] The following specific examples should be interpreted as illustrative only and should not be construed as limiting the remainder of this disclosure. Those skilled in the art will likely be able to make the most of the present invention based on the descriptions herein without further detail. [Examples]

[0053] In these embodiments, polishing was performed on a 200 mm wafer using an AMAT Mirra CMP polisher, Fujibo H804 pads, a downforce pressure of 1 psi, a platen head speed of 71 / 63 rpm, and a slurry flow rate of 175 mL / min to 225 mL / min.

[0054] The overall compositions used in the examples are shown in Table 1 below. Specific details regarding the differences between the tested compositions will be explained in more detail when discussing each example. [Table 1]

[0055] Example 1 Table 2 below shows the average particle size (MPS) of silica particle solutions at different pH values ​​after aging at 60°C for 10 days. This test simulates the aging of the abrasive composition and demonstrates its stability over time. At each pH value, a solution without organosilane compounds was compared to solutions containing 1×organosilane compounds and 3×organosilane compounds. [Table 2]

[0056] The results surprisingly show that the inclusion of an organosilane compound significantly stabilized the silica solution, particularly at pH values ​​of 2-4, where the zeta potential of the silica particles is close to zero and significant particle aggregation generally occurs over time. This result suggests that, unexpectedly, including an organosilane compound in the abrasive composition can result in an abrasive composition with a long and stable shelf life, which is an important consideration for end-users of abrasive compositions.

[0057] Example 2 Table 3 below shows (1) the removal rates on Cu and TEOS blanket wafers when polished with polishing compositions 1 to 5, and (2) the total number of defects (TDC) on the blanket wafers after polishing. The total number of defects was measured using the KLA XUV Advanced Inspection Tool. Compositions 1 to 5 were identical except that compound 1 did not contain an organosilane compound, compositions 2 and 3 contained an organosilane compound containing an acid group, its ester, or its salt, composition 4 contained an alkoxysilane compound, and composition 5 contained an aminosilane compound.

[0058] These results indicate that the inclusion of organosilane compounds containing acidic groups, their esters, or salts (i.e., compositions 2 and 3) did not adversely affect the polishing performance of the compositions. In fact, the removal rates of the TEOS and Cu films remained relatively unchanged. Surprisingly, the inclusion of organosilane compounds containing acidic groups, their esters, or salts also significantly reduced the TDC on the polished TEOS wafer; compared to composition 1, composition 2 showed a reduction of approximately 11% in TDC, and composition 3 showed a reduction of approximately 58% in TDC. Compositions 4 and 5 contained alkoxysilane and aminosilane compounds, respectively, and their use showed a significant increase in TDC observed on Cu compared to compositions 1-3. The alkoxysilane and aminosilane compounds used in compositions 4 and 5 were compounds that did not contain acidic groups, their esters, or salts. [Table 3]

[0059] Although only a few examples of embodiments have been described in detail above, those skilled in the art will readily understand that many modifications are possible in these examples of embodiments without substantially departing from the present invention. Accordingly, all such modifications are intended to fall within the scope of this disclosure as defined in the following claims.

Claims

1. At least one type of abrasive; At least one first Si-containing compound comprising an acidic group, an ester thereof, or a salt thereof; and water, An abrasive composition comprising, wherein the at least one first Si-containing compound is not covalently bonded to the at least one abrasive.

2. The polishing composition according to claim 1, wherein the abrasive is selected from the group consisting of a co-molded article of alumina, silica, titania, ceria, or zirconia, alumina, silica, titania, ceria, zirconia, coating abrasive, surface modifying abrasive, and mixtures thereof.

3. The polishing composition according to claim 1 or claim 2, wherein the amount of the abrasive is about 0.1% by weight to about 50% by weight relative to the composition.

4. The polishing composition according to any one of claims 1 to 3, wherein the at least one first Si-containing substance is selected from the group consisting of 3-(trihydroxysilyl)propyl methylphosphonate, 3-(trihydroxysilyl)-1-propanesulfonic acid, carboxyethylsilanetriol, (2-diethylphosphatoethyl)triethoxysilane, [3-(trihydroxysilyl)propyl](methyl)phosphate, 3-(trimethylsilyl)-1-propanesulfonic acid, 3-{[dimethyl(3-trimethoxysilyl)propyl]ammonio}-propane-1-sulfonate, and combinations thereof.

5. The polishing composition according to any one of claims 1 to 4, wherein the amount of at least one first Si-containing compound is about 0.0001% by weight to about 20% by weight relative to the composition.

6. Furthermore, the polishing composition according to any one of claims 1 to 4, comprising at least one second Si-containing compound different from the at least one first Si-containing compound.

7. The polishing composition according to claim 6, wherein the at least one second Si-containing compound is selected from the group consisting of tetramethyl orthosilicate, tetraethyl orthosilicate, potassium methyl siliconate, (3-glycidyloxypropyl)trimethoxysilane, triethoxysilylpropoxy(polyethyleneoxy)dodecanoate, (3-triethoxysilyl)propyl succinic anhydride, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, ureidopropyltriethoxysilane, trimethylmethoxysilane, N-trimethoxysilylpropyl-N,N,N-trimethylammonium chloride, dimethyldimethoxysilane, vinyltrimethoxysilane, and potassium silicate.

8. The polishing composition according to claim 6 or claim 7, wherein the amount of the at least one second Si-containing compound is about 0.0001% by weight to about 10% by weight relative to the composition.

9. Furthermore, the polishing composition according to any one of claims 1 to 8, comprising at least one organic acid or a salt thereof.

10. The aforementioned at least one organic acid or salt thereof is gluconic acid, lactic acid, citric acid, tartaric acid, malic acid, glycolic acid, malonic acid, formic acid, oxalic acid, acetic acid, propionic acid, peracetic acid, succinic acid, potassium acetate, potassium citrate, aminoacetic acid, phenoxyacetic acid, bicine, diglycolic acid, glyceric acid, tricine, alanine, histidine, valine, phenylalanine, proline, glutamine, aspartic acid, glutamic acid, arginine, lysine, tyrosine, benzoic acid Acids, 1,2-ethanedisulfonic acid, 4-amino-3-hydroxy-1-naphthalenesulfonic acid, 8-hydroxyquinoline-5-sulfonic acid, aminomethanesulfonic acid, benzenesulfonic acid, hydroxylamine-O-sulfonic acid, methanesulfonic acid, m-xylene-4-sulfonic acid, poly(4-styrenesulfonic acid), polyanetholsulfonic acid, p-toluenesulfonic acid, trifluoromethanesulfonic acid, ethyl phosphate, cyanoethyl phosphate, phenyl The polishing composition according to claim 9, selected from the group consisting of nitric acid, vinyl phosphoric acid, vinylphosphonic acid, poly(vinylphosphonic acid), 1-hydroxyethane-1,1-diphosphonic acid, nitrilotri(methylphosphonic acid), diethylenetriaminepentakis(methylphosphonic acid), N,N,N',N'-ethylenediaminetetrakis(methylenephosphonic acid), n-hexylphosphonic acid, benzylphosphonic acid, phenylphosphonic acid, ethylenediaminetetraacetic acid, iminodiacetic acid, N-hydroxyethyl-ethylenediaminetriacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, hydroxyethylethylenediaminetriacetic acid, triethylenetetraaminehexaacetic acid, diaminocyclohexanetetraacetic acid, nitrilotrimethylphosphonic acid, ethylenediaminetetra(methylenephosphonic acid), 1-hydroxyethylidene-1,1-diphosphonic acid, diethylenetriaminepenta(methylenephosphonic acid), salts thereof, and mixtures thereof.

11. The polishing composition according to claim 9 or claim 10, wherein the amount of at least one organic acid or a salt thereof is about 0.02% to about 4% by weight relative to the composition.

12. At least one low-k removal rate inhibitor, and At least one azole-containing rust inhibitor, The abrasive composition according to any one of claims 1 to 11, further comprising:

13. The polishing composition according to claim 12, wherein the at least one low-k removal rate inhibitor comprises a nonionic surfactant.

14. The polishing composition according to claim 13, wherein the nonionic surfactant is selected from the group consisting of alcohol alkoxylate, alkylphenol alkoxylate, tristyrylphenol alkoxylate, sorbitan ester alkoxylate, polyalkoxylate, polyalkylene oxide block copolymer, and alkoxylated diamine.

15. The polishing composition according to any one of claims 12 to 14, wherein the amount of the at least one low-k removal rate inhibitor is about 0.005% by weight to about 5% by weight relative to the composition.

16. The polishing composition according to any one of claims 12 to 15, wherein the at least one azole-containing rust inhibitor is selected from the group consisting of triazole, tetrazol, benzotriazole, tolyltriazole, methylbenzotriazole, ethylbenzotriazole, propylbenzotriazole, butylbenzotriazole, pentylbenzotriazole, hexylbenzotriazole, dimethylbenzotriazole, chlorobenzotriazole, dichlorobenzotriazole, chloromethylbenzotriazole, chloroethylbenzotriazole, phenylbenzotriazole, benzylbenzotriazole, aminotriazole, aminobenzimidazole, pyrazole, imidazole, aminotetrazol, and mixtures thereof.

17. The polishing composition according to any one of claims 12 to 16, wherein the amount of at least one azole-containing rust inhibitor is about 0.0001% by weight to about 1% by weight relative to the composition.

18. Furthermore, the composition according to any one of claims 1 to 17, comprising at least one pH adjusting agent.

19. The composition according to claim 18, wherein the at least one pH adjusting agent is selected from the group consisting of inorganic bases, organic bases, and mixtures thereof.

20. The composition according to claim 18 or 19, wherein the at least one pH adjusting agent is selected from the group consisting of ammonium hydroxide, sodium hydroxide, potassium hydroxide, cesium hydroxide, rubidium hydroxide, quaternary ammonium hydroxide, quaternary phosphonium hydroxide, and mixtures thereof.

21. The composition according to claim 20, wherein the quaternary ammonium hydroxide or quaternary phosphonium hydroxide is selected from the group consisting of tetrabutylammonium hydroxide, ethyltrimethylammonium hydroxide, tetrapropylammonium hydroxide, tetraethylammonium hydroxide, tetramethylammonium hydroxide, diethyldimethylammonium hydroxide, dimethyldipropylammonium hydroxide, benzyltrimethylammonium hydroxide, tetramethylphosphonium hydroxide, tetraethylphosphonium hydroxide, tetrapropylphosphonium hydroxide, tetrabutylphosphonium hydroxide, tetrapentylphosphonium hydroxide, triethylmethylphosphonium hydroxide, tetrakis(hydroxymethyl)phosphonium hydroxide, tetraphenylphosphonium hydroxide, and any combination thereof.

22. The polishing composition according to any one of claims 18 to 21, wherein the amount of at least one pH adjusting agent is about 0.05% to about 10% by weight relative to the composition.

23. An abrasive composition according to any one of claims 1 to 22, having a pH of approximately 2 to approximately 14.

24. A step of applying the polishing composition according to any one of claims 1 to 23 to the surface of a substrate; A step of bringing the pad into contact with the surface of the substrate and moving the pad relative to the substrate, A method for polishing a circuit board, including [specific details omitted].

25. A method for stabilizing an abrasive composition, comprising mixing the abrasive composition with at least one Si-containing compound, The method wherein the abrasive composition comprises an abrasive, and the at least one Si-containing compound comprises an acidic group, an ester thereof, or a salt thereof.

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