Method for processing high dielectric constant materials to reduce leakage current and increase capacitance

Abstract

Embodiments described herein relate to systems and methods for processing high dielectric constant materials for use in forming MIM capacitors, including various high-density plasma nitriding processes or combinations of high-density plasma oxidation processes and high-density plasma nitriding processes.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to metal-insulator-metal (“MIM”) capacitors in integrated circuits. More specifically, embodiments of the present disclosure relate to a method for processing high dielectric constant materials using high density radicals.

Background Art

[0002]

[0002] Capacitors are one component of semiconductor devices that can occupy a significant area on a semiconductor die, depending on the size of the capacitor and / or the number of capacitors on the die. An example of a capacitor used in a semiconductor memory device is a metal-insulator-metal (MIM) capacitor. Conventional MIM capacitors are two-dimensional (2D). A 2D MIM capacitor is planar and has two opposing metal plates that are substantially parallel to each other and to the substrate. One way to increase the capacitance of a MIM capacitor is to increase the size of the metal plates. However, increasing the size of the metal plates consumes more surface area of the substrate. A three-dimensional (3D) MIM capacitor allows the same capacitive surface area but consumes less surface area of the substrate. However, a 3D MIM capacitor may experience performance degradation if leakage current occurs between the two metal plates.

[0003]

[0003] In a capacitor, a dielectric layer disposed between two electrodes is often utilized and formed to store charge when a display device is operating. When using a display device, it is desirable for the capacitor to have a large capacitance. Thus, the capacitor can be formed using a high dielectric constant dielectric material. When the dielectric layer is formed of a material having a high dielectric constant, the capacitance of the formed capacitor also increases. However, certain properties of high dielectric constant dielectric materials, such as oxygen pores, grain boundaries, and impurities, can increase leakage and decrease the dielectric constant.

[0004]

[0004] Therefore, an improved method is needed to suppress leakage current and maintain a high dielectric constant in high dielectric constant materials. [Overview of the project]

[0005]

[0005] The embodiments of the present disclosure generally relate to metal-insulator-metal ("MIM") capacitors in integrated circuits. More specifically, embodiments of the present disclosure relate to methods for processing high dielectric constant materials using high-density radicals.

[0006]

[0006] One or more embodiments of the present disclosure provide a plasma processing method. The method comprises receiving a substrate stack in a processing chamber, the substrate stack comprising a high dielectric layer formed on metal electrodes. The method further comprises introducing a processing gas into a gas injection channel defined between a gas injection insert and a sidewall of a plasma source. The method further comprises generating an inductively coupled plasma in the gas injection channel using an induction coil positioned near the sidewall and overlapping the gas injection channel horizontally. The plasma comprises at least one nitrogen radical species. The method further comprises supplying plasma from the plasma source to a processing chamber connected to the plasma source, the plasma flowing through a separation grid positioned between the plasma source and the substrate stack to be processed. The method further comprises processing the substrate stack in the processing chamber, the processing of the substrate stack comprising bringing a plasma comprising at least one nitrogen radical species into contact with the high dielectric layer facing the separation grid, and heating the substrate stack using a plurality of lamps located on a second side of the substrate stack opposite the separation grid.

[0007]

[0007] The implementation configuration may include one or more of the following. The embodiment may include one or more of the following. After processing the substrate stack with plasma, the method includes introducing an oxygen-containing gas into a gas injection channel of a plasma source, generating an oxygen plasma containing oxygen radicals in the gas injection channel, supplying the oxygen plasma from the plasma source into a processing chamber, and processing the substrate stack using the oxygen plasma in the processing chamber, wherein processing the substrate stack includes bringing the oxygen plasma containing oxygen radicals into contact with a high-dielectric-constant dielectric layer facing a separation grid, and heating the substrate stack using a plurality of lamps positioned on a second side of the substrate stack facing the separation grid. Processing the substrate stack in the processing chamber forms one or more nitrogen-containing diffusion barrier layers within the substrate stack. One of the diffusion barrier layers is formed within the high-dielectric-constant dielectric layer. The diffusion barrier layers of the one or more diffusion barrier layers are formed at the interface between the high-dielectric-constant dielectric layer and the metal electrode. The high-dielectric-constant dielectric layer includes zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide. The metal electrodes include metal nitrides having a metal selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta). The high dielectric constant dielectric layer is formed by an atomic layer deposition (ALD) process.

[0008]

[0008] In one or more embodiments, a plasma processing method is provided. The method comprises receiving a substrate stack in a processing chamber, the substrate stack comprising a high dielectric layer formed on metal electrodes. The method further comprises introducing a processing gas into a gas injection channel defined between a gas injection insert and a side wall of a plasma source. The method further comprises generating an inductively coupled plasma in the gas injection channel using an induction coil positioned near the side wall and overlapping the gas injection channel horizontally, the plasma comprising at least one oxygen radical species. The method further comprises supplying plasma from the plasma source to a processing chamber connected to the plasma source, the plasma flowing through a separation grid positioned between the plasma source and the substrate stack to be processed. The method further comprises processing the substrate stack in the processing chamber, the processing of the substrate stack comprising bringing the plasma comprising at least one oxygen radical species into contact with the high dielectric layer facing the separation grid, and heating the substrate stack using a plurality of lamps located on a second side of the substrate stack opposite the separation grid.

[0009]

[0009] The implementation configuration may include one or more of the following: After processing the substrate stack with plasma, the method involves introducing a nitrogen-containing gas into a gas injection channel of a plasma source, generating nitrogen plasma in the gas injection channel, supplying nitrogen plasma from the plasma source to a processing chamber, and processing the substrate stack with nitrogen plasma in the processing chamber, wherein the nitrogen plasma containing nitrogen radicals is in contact with a high dielectric constant dielectric layer facing a separation grid, and on the second side of the substrate stack of the substrate stack opposite the separation grid. By processing the substrate stack with nitrogen plasma, one or more nitrogen-containing diffusion barrier layers are formed in the substrate stack. One of the diffusion barrier layers is formed in the high dielectric constant dielectric layer. The diffusion barrier layers of one or more diffusion barrier layers are formed at the interface between the high dielectric constant dielectric layer and the metal electrode. The high dielectric constant dielectric layer includes zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide. The metal electrodes include metal nitrides having a metal selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta). The high dielectric constant dielectric layer is formed by an atomic layer deposition (ALD) process.

[0010]

[0010] In one or more embodiments, a plasma processing system is provided. The system includes a processing chamber defining a processing space, a plasma source, a gas injection insert located within the plasma source, a gas injection channel defined between the gas injection insert and the side wall of the plasma source, an induction coil located adjacent to the side wall and horizontally overlapping the gas injection channel, an isolation grid separating the plasma source from the processing space, and a system controller. The system controller includes a memory for storing computer-readable instructions and a processor coupled to the memory, the processor comprising computer-readable instructions that, when executed by the processor, perform a plurality of operations. The plurality of steps include introducing a processing gas into the gas injection channel, generating an inductively coupled plasma in the gas injection channel using the induction coil, the plasma comprising at least one nitrogen radical species, supplying the plasma from the plasma source to the processing space, the plasma flowing through the isolation grid, and processing a substrate stack in the processing space, the substrate stack forming on metal electrodes. Processing the substrate stack involves bringing a plasma containing at least one nitrogen radical species into contact with a high-dielectric-constant dielectric layer facing a separation grid, and heating the substrate stack using a plurality of lamps located on a second side of the substrate stack opposite the separation grid.

[0011]

[0011] The implementation configuration may include one or more of the following: The steps include introducing an oxygen-containing gas into a gas injection channel of a plasma source, generating an oxygen plasma containing oxygen radicals in the gas injection channel, supplying the oxygen plasma from the plasma source to a processing space, and processing the substrate stack with the oxygen plasma in the processing space, wherein processing the substrate stack uses an oxygen plasma containing oxygen radicals and a plurality of lamps positioned on the second side of the substrate stack facing the separation grid. Processing the substrate stack in the processing space forms one or more nitrogen-containing diffusion barrier layers within the substrate stack. The high dielectric constant dielectric layer includes zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide, and the metal electrode includes a metal nitride having a metal selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta).

[0012]

[0012] In another implementation, a non-temporary computer-readable medium stores instructions, which, when executed by a processor, cause a process to perform the operation of the above-described apparatus and / or method.

[0013]

[0013] To enable a detailed understanding of the features of the present disclosure described above, a more specific description of the present disclosure, which has been briefly summarized above, can be obtained by referring to the implementations, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only show illustrative implementations and should not be considered to limit the scope of the present disclosure, and other equally valid implementations are also permitted. [Brief explanation of the drawing]

[0014] [Figure 1] This is a schematic diagram of a system relating to one or more implementation forms described in this specification. [Figure 2] This is a flowchart illustrating a method for processing a high dielectric constant dielectric layer according to one or more implementation configurations described herein. [Figure 3A-3C] This specification shows diagrams illustrating various stages in forming a semiconductor structure, relating to one or more implementation configurations described herein. [Figure 4] This is a flowchart illustrating a method for processing a high dielectric constant dielectric layer according to one or more implementation configurations described herein. [Figures 5A-5C] This specification shows diagrams illustrating various stages in forming a semiconductor structure, relating to one or more implementation configurations described herein. [Modes for carrying out the invention]

[0015]

[0019] To facilitate understanding, the same reference number was used where possible to indicate identical elements common to multiple diagrams. It is assumed that elements and features of one implementation can be usefully incorporated into other implementations without further description.

[0016]

[0020] The implementation described herein relates to a system and method for processing high dielectric constant materials for use in forming MIM capacitors.

[0017]

[0021] During the formation of MIM capacitors, carbon impurities, oxygen vacancies within high-dielectric-constant dielectric materials, and interdiffusion of impurities between materials have been major problems that degrade MIM capacitor characteristics by increasing leakage current and decreasing dielectric constant. In conventional MIM capacitor formation processes, there are currently no special treatment processes to reduce oxygen vacancies trapped in high-dielectric-constant materials and grain boundaries due to crystallization; these are only applied after thermal annealing to increase crystallinity.

[0018]

[0022] To dramatically improve the increase in leakage current and decrease in dielectric constant of MIM capacitors, various high-density plasma nitriding processes or combinations of high-density plasma oxidation and high-density plasma nitriding processes are provided. The described processes help reduce the leakage current and increase the capacitance of MIM capacitors. These processes include the removal of oxygen vacancies in the high-dielectric layer, the prevention of increased interfacial layer thickness by forming a nitrogen layer between the high-dielectric layer and the electrode, the formation of a barrier to prevent interdiffusion of impurities from the high-dielectric layer and the electrode, and the improvement of crystallinity at high dielectric constant without post-deposition annealing.

[0019]

[0023] In one or more implementation configurations that can be combined with other implementation configurations, a plasma treatment process is provided that includes plasma nitriding of a high dielectric material. By applying plasma nitriding to a high dielectric material, (i) the degree of crystallinity in the high dielectric material can be increased through the relatively high temperature using a heater temperature in the range of about 400°C to about 600°C and / or a relatively high temperature plasma gas; and (ii) oxygen vacancies can be further passedivated by high-density nitrogen radicals. In addition, plasma nitriding at relatively high temperatures, for example above 400°C, can sufficiently increase the degree of crystallinity in the high dielectric material, thus eliminating the additional heat treatment steps previously used.

[0020]

[0024] One or more implementation configurations that can be combined with other implementation configurations provide a dual-process plasma process including plasma oxidation followed by plasma nitriding on a high dielectric material. The dual-process of plasma oxidation (PO) followed by plasma nitriding (PN) on a high dielectric material can further increase the degree of crystallinity at high dielectrics and further reduce leakage current compared to plasma nitriding alone. By applying plasma oxidation, (i) carbon impurities can be removed from the high dielectric material by a chemical reaction between carbon and high-density oxygen radicals, and (ii) oxygen vacancies can be passivated by high-density oxygen radicals, which can ultimately increase the k value by increasing the degree of crystallinity in the high dielectric material and reduce leakage current by removing traps. (i) relatively high temperatures (e.g., heater temperatures in the range of about 400°C to about 600°C) and / or relatively high temperatures of plasma gas can improve the crystallinity of high dielectric constant insulating materials; (ii) further passivation of oxygen vacancies by high-density nitrogen radicals; and (iii) formation of a diffusion barrier to the oxidizer by subsequent deposition and / or heat treatment of the high dielectric constant insulating material. This ultimately increases the dielectric constant k value and further suppresses leakage current. However, in order to prevent or reduce oxidation of the lower electrode, the plasma oxidation process is applied at a temperature lower than the high dielectric constant insulating material deposition temperature, for example, in the range of about 150°C to about 350°C, or about 250°C to about 350°C. Subsequent plasma nitriding can (i) improve the crystallinity of high dielectric constant insulating materials with relatively high temperatures (e.g., about 400°C to about 600°C) and / or relatively high-temperature plasma gases, (ii) further passivate oxygen vacancies with high-density nitrogen radicals, and (iii) form a diffusion barrier against the oxidizer by subsequent deposition and / or heat treatment of the high dielectric constant insulating material. This ultimately increases the dielectric constant k value and further suppresses leakage current. In addition, plasma nitriding carried out at relatively high temperatures, e.g., above 350°C, can sufficiently increase the degree of crystallinity in high dielectric constant dielectric materials, thus eliminating the additional heat treatment steps previously used.

[0021]

[0025] In one or more implementation forms that can be combined with other implementation forms, a dual - process plasma process is provided that includes plasma nitridation followed by plasma oxidation on a high - dielectric - constant material. By applying plasma nitridation, (i) the crystallinity in the high - dielectric - constant dielectric material can be increased by relatively high temperatures, for example, using a heater temperature of 400 °C or higher and / or a relatively high - temperature plasma gas, (ii) oxygen vacancies are further passivated by high - density nitrogen radicals, (iii) a diffusion barrier is formed against the oxide coming from subsequent deposition and heat treatment of the high - dielectric - constant dielectric material, resulting in an increase in the final k value and further suppression of leakage current. Furthermore, applying plasma nitridation may cause further nitridation at the interface between the bottom electrode and the bulk high - dielectric - constant dielectric material, which may help to suppress an increase in the reaction layer due to oxidation of the bottom electrode that may occur during subsequent plasma oxidation. Subsequent plasma oxidation can (i) remove carbon impurities from the high - dielectric - constant dielectric material by a chemical reaction between carbon and high - density oxygen radicals, and (ii) passivate oxygen vacancies with high - density oxygen radicals, thereby finally increasing the k value by increasing the crystallinity in the high - dielectric - constant dielectric material and reducing the leakage current by removing traps. However, in order to prevent oxidation of the lower electrode, it is necessary to apply it at a temperature below the high - dielectric - constant deposition temperature in the range of, for example, about 150 °C to about 350 °C, or about 250 °C to about 350 °C.

[0022]

[0026] Figure 1 is a schematic diagram of a plasma processing system according to one or more implementations of the present disclosure. The plasma processing system 100 includes a processing chamber 110 and a plasma source 120 (e.g., a remote plasma source) connected to the processing chamber 110. The processing chamber 110 also includes a substrate support 112 that is operable to hold a substrate 114. The processing chamber 110 defines a processing space 111 between the plasma source 120 and the substrate support 112. The substrate support 112 may be in proximity to one or more heat sources (e.g., a plurality of lamps 176) that supply heat to the substrate during processing of the substrate in the processing chamber 110. The plurality of lamps 176 are arranged between a window 162 and the bottom wall of the processing chamber 110. The substrate support 112 is arranged between a separation grid 116 and the window 162.

[0023]

[0027] The plasma source 120 includes dielectric sidewalls 122. The plasma source 120 includes an upper cover 124. The dielectric sidewalls 122 and upper cover 124, integrated with a gas injection insert 140, define the interior 125 of the plasma source. The dielectric sidewalls 122 may include any suitable dielectric material such as quartz. An induction coil 130 is positioned close to (e.g., adjacent to) the dielectric sidewalls 122 surrounding the plasma source 120. The induction coil 130 is connected to an RF power generator 134 via any suitable matching network 132. A supply gas is introduced into the interior 125 of the plasma source from a gas supply source 150. When the induction coil 130 is excited by RF power from the RF power generator 134, plasma is generated within the plasma source 120. To increase efficiency, the plasma processing system 100 includes a gas injection insert 140 located in the interior 125 of the plasma source. The gas injection insert 140 includes one or more gas injection channels 151. The gas injection channel 151 supplies a processing gas to the inside of the plasma source 125 through the active zone 172, where a reaction occurs between the high-temperature electrons and the supply gas due to enhanced confinement of high-temperature electrons. The induction coil 130 overlaps the gas injection channel 151 at least partially horizontally.

[0024]

[0028] Plasma can be generated within the plasma source 120 (e.g., within the plasma generation region) by the induction coil 130, and the target particles flow from the plasma source 120 to the surface of the substrate 114 through the holes 126 provided in the separation grid 116 that separates the plasma source 120 from the processing chamber 110 (downstream region). The separation grid 116 is configured to separate the processing space 111 from the plasma charged particles (ions and electrons) that recombine on the separation grid 116 so that only neutral plasma species can pass through the separation grid 116 and enter the processing space 111 within the processing chamber 110.

[0025]

[0029] In some implementations, the induction coil 130 is aligned with the active zone 172 such that the upward direction of the induction coil 130 is above the bottom edge 180 or the bottom surface of the gas injection insert 140 and operates substantially within the active zone 172 of the internal space, while the downward direction of the induction coil 130 is below the bottom edge 180 and operates substantially outside the active zone 172. The center of the induction coil 130 is substantially aligned with the bottom edge 180. Within these boundaries, the position of the induction coil 130 can be adjusted for the desired performance.

[0026]

[0030] In some implementations, the bottom edge 180 is aligned with a part of the induction coil 130 (e.g., the coil loop 182) along the axis 184 by forming the plasma source 120 using a gas injection insert 140 of appropriate size (and the upper cover 124 which can be a pre-formed part of the gas injection insert 140). Alternatively, while the remaining part of the gas injection insert 140 is static (e.g., fixed) as part of the plasma source 120, the bottom edge 180 is movable along the vertical direction V1 with respect to the plasma source 120. For example, a mechanism can be connected to any suitable part of the gas injection insert 140 so that the position of the bottom edge 180 can be adjusted, such that a part of the gas injection insert 140 having a first length (L1) is adjusted to a second length (L2).

[0027]

[0031] The substrate 114 may be placed in the processing chamber directly below the separation grid 116, or at a certain distance from the separation grid 116. Neutral particles from the plasma source 120 flow downward through the separation grid 116 toward the substrate 114 in the processing chamber 110, and the neutral particles come into contact with the substrate 114 to perform a contact process, such as a surface treatment process.

[0028]

[0032] The plasma processing system 100 further includes a system controller 190 for controlling the processes performed by the plasma processing system 100. The system controller 190 can be any type of controller used in industrial settings (such as a programmable logic controller (PLC)). The system controller 190 includes a processor 192, memory 194, and input / output (I / O) circuits 196. The system controller 190 may further include one or more of the following components (not shown), such as one or more power supplies, clocks, communication components (e.g., a network interface card), and user interfaces, which are typically found in controllers for semiconductor devices.

[0029]

[0033] Memory 194 may include non-temporary memory. Non-temporary memory may be used to store computer-readable instructions, programs, and settings as described below. Memory 194 may include one or more readily available types of memory, such as read-only memory (ROM) (e.g., electrically erasable programmable read-only memory (EEPROM), flash memory, floppy disks, hard disks, or random access memory (RAM) (e.g., non-volatile random access memory (NVRAM)).

[0030]

[0034] The processor 192 is linked to memory. The processor 192 is composed of computer-readable instructions or programs stored in memory 194, which, when executed by the processor 192, perform multiple operations, for example, multiple operations of method 200 described with reference to Figure 2. During the execution of these instructions or programs, the system controller 190 can communicate with I / O devices via I / O circuit 196. For example, during the execution of these programs and communication via I / O circuit 196, the system controller 190 can control outputs (e.g., the plasma source 120, the RF power generator 134, and the gas supply from the gas supply source 150). Memory 194 may further include various operational settings used to control the plasma processing system 100. For example, the settings may include temperature and pressure settings, as well as settings for controlling the gas supply from the gas sources described herein.

[0031]

[0035] A method is provided for using a plasma treatment system 100 to process a substrate using high-density radicals. In certain embodiments, the substrate includes a high dielectric material, such as a high dielectric material used for capacitor formation. In some embodiments, the high dielectric material of the substrate includes ZrO2 or a combination of ZrO2 and HfO2.

[0032]

[0036] In some implementations, the plasma processing system 100 may be used to perform a plasma nitriding process on a substrate using high-density nitrogen radicals. In some implementations, the plasma nitriding process may increase the crystallinity of the substrate and reduce oxygen vacancies. In some implementations, the plasma nitriding process may form one or more nitrogen layers on the substrate.

[0033]

[0037] In some implementations, the plasma processing system 100 can be used to perform a plasma oxidation process on a substrate using high-density oxygen radicals. In some implementations, the plasma oxidation process can reduce impurities and oxygen vacancies in the substrate.

[0034]

[0038] In some implementations, the plasma processing system 100 can be used to sequentially perform both a plasma nitriding process and a plasma oxidation process on a substrate. In certain implementations, the plasma nitriding process may be performed first, followed by the plasma oxidation process. In other implementations, the plasma oxidation process may be performed first, followed by the plasma nitriding process.

[0035]

[0039] Figure 2 is a flowchart showing a method 200 for processing a high dielectric layer according to one or more implementations of the present disclosure. Figures 3A-3C show diagrams of various steps for forming a semiconductor structure according to one or more implementations described herein. Although Figures 3A-3C are described in relation to method 200, the structures disclosed in Figures 3A-3C are not limited to method 200 and may instead be independent structures independent of method 200. Similarly, although method 200 is described in relation to Figures 3A-3C, method 200 is not limited to the structures disclosed in Figures 3A-3C and may instead be independent of the structures disclosed in Figures 3A-3C. Figures 3A-3C show only partial schematic diagrams of semiconductor device structures 300, and it should be understood that semiconductor device structures 300 may include any number of transistor sections and additional materials having the embodiments shown in the figures. Semiconductor device structures 300 may be MIM capacitors. Furthermore, while the method 200 shown in Figure 2 is described sequentially, it should be noted that other process sequences, including one or more steps that are omitted and / or added and / or rearranged in a different preferred order, are included within the scope of embodiments of the disclosure described herein.

[0036]

[0040] In operation 210, the substrate stack 304 is received. The substrate stack 304 may be positioned on the substrate support 112 of the plasma processing system 100 shown in Figure 1. The substrate stack 304 is the substrate 114 shown in Figure 1, or may include the substrate 114. Referring to Figure 3A, the substrate stack 304 includes a lower electrode 306 and a high dielectric constant dielectric layer 308 formed on the lower electrode 306. The substrate stack 304 may further include a substrate 312 on which the lower electrode 306 is formed, for example, a polysilicon substrate.

[0037]

[0041] The lower electrode 306 is or contains a metal nitride material. The lower electrode 306 can be manufactured from any suitable metal such as titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta). In one or more mounting configurations that can be combined with other mounting configurations, the lower electrode 306 is or contains TiN. The lower electrode 306 can be formed on the substrate 312 by any suitable process. In one or more mounting configurations, the lower electrode 306 is formed by a physical vapor deposition (PVD) process, where the metal is formed and then exposed to a nitrogen plasma to form a metal nitride. The lower electrode 306 may have a thickness in the range of about 50 angstroms to about 5,000 angstroms.

[0038]

[0042] The high dielectric layer 308 is formed on or above the lower electrode 306, as shown in Figure 3A. The high dielectric layer 308 is manufactured from any suitable dielectric material with a k value of 20 or more, such as zirconium oxide (ZrO2), aluminum oxide (Al2O3), titanium dioxide (TiO2), hafnium dioxide (HfO2), or zinc hafnium oxide (HfZO) (a combination of HfO and ZrO2). In some embodiments, the high dielectric layer 308 is a multilayer stack containing at least one layer of high dielectric material. In one embodiment, the high dielectric layer 308 contains a ZrO2 layer and a silicon nitride (SiN) layer. In another embodiment, the high dielectric layer 308 contains a layer of high dielectric material sandwiched between two dielectric layers. The high dielectric layer 308 has a k value in the range of about 20 to about 50. The high dielectric layer 308 may have a thickness of 50 angstroms or more. The high dielectric layer 308 may have a thickness in the range of about 50 angstroms to about 500 angstroms. The high dielectric layer 308 may be formed on or on the substrate 312 by any suitable process. In one or more mounting configurations, the high dielectric layer 308 is formed by an atomic layer deposition (ALD) process. The ALD process can be carried out at a deposition temperature of less than 400°C, for example, in the range of about 150°C to about 350°C, or in the range of about 250°C to about 350°C. The lower electrode 306 may have a thickness in the range of about 50 angstroms to about 5,000 angstroms.

[0039]

[0043] In one or more configurations, precursors used to deposit the high dielectric constant dielectric layer 308 include zirconium-containing precursors and oxygen-containing precursors. Suitable zirconium-containing precursors include zirconium organometallic precursors such as tetrakis(ethylmethylamino)zirconium (TEMAZ) and tris(dimethylamino)cyclopentadienylzirconium (C5H5)Zr[N(CH3)2]3. Suitable oxygen-containing precursors include H2O, O2, O3, H2O2, CO2, NO2O, N2O, etc.

[0040]

[0044] The substrate stack 304 may further include a reaction layer 310 formed at the interface between the lower electrode 306 and the high dielectric constant dielectric layer 308. The reaction layer 310 may be formed by oxidation of the lower electrode 306.

[0041]

[0045] In step 220, the high dielectric constant dielectric layer 308 is exposed to a high-density plasma nitriding process, as shown in Figure 3B. Exposure to the high-density nitriding process may form one or more nitrogen layers or diffusion barrier layers 322, 324 within the substrate stack 304. The diffusion barrier layers 322, 324 reduce or prevent the diffusion of oxidizing agent from the additional high dielectric constant layer and / or subsequent deposition after heat treatment to the high dielectric constant dielectric layer 308 and the electrode 306, thereby suppressing an increase in the size of the reaction layer 310. In one or more mounting configurations, the diffusion barrier layer is formed at the interface between the high dielectric constant dielectric layer 308 and the lower electrode 306, for example, the diffusion barrier layer 324. In one or more mounting configurations, one of the diffusion barrier layers is formed on the top surface or inside the high dielectric constant dielectric layer 308, for example, the diffusion barrier layer 322. The diffusion barrier layers 322, 324 may have thicknesses ranging from about 5 angstroms to about 30 angstroms, for example, about 5 angstroms to about 25 angstroms, about 10 angstroms to about 25 angstroms, about 10 angstroms to about 20 angstroms, or about 10 angstroms to about 20 angstroms. In some embodiments, one or more diffusion barrier layers 322, 324 may be formed by exposing the high dielectric constant dielectric layer 308 to a first radical (e.g., a nitrogen radical).

[0042]

[0046] Referring to Figure 1, using the plasma processing system 100 disclosed herein, a plasma containing a first radical is formed within the active zone 172 inside the plasma source 125. For example, a gas injection insert 140 can form a plasma containing the first radical by introducing a first processing gas containing nitrogen through a gas injection channel 151. The plasma may be an inductively coupled plasma generated in the gas injection channel 151 by an induction coil 130. The first processing gas may be selected from diatomic nitrogen (N2), ammonia (NH3), or a mixture thereof. In some implementations, the first processing gas may be introduced into the active zone 172 inside the plasma source 125 in a first processing gas flow rate range of about 1000 standard cubic centimeters per minute (sccm) to about 10000 sccm. For example, the ranges are approximately 1,000 sccm to 9,500 sccm, 1,500 sccm to 9,500 sccm, 1,500 sccm to 8,500 sccm, 4,000 sccm to 8,500 sccm, or 6,000 sccm to 8,000 sccm. In some implementations, the first radical may be introduced over a period ranging from approximately 10 seconds to approximately 500 seconds (e.g., approximately 60 seconds to 400 seconds, approximately 90 seconds to 300 seconds, or approximately 120 seconds to 300 seconds).

[0043]

[0047] The plasma source 120 is configured to flow a plasma containing a first radical through holes 126 in the separation grid 116 toward the substrate support 112, thereby processing the substrate 114 or the substrate stack 304 placed thereon. The plasma source 120 can generate plasma-charged particles, such as ions and electrons, that recombine on the separation grid 116, so that only mostly or neutral plasma species pass through the separation grid 116, exposing the substrate 114 or substrate stack 304 to a high-density nitrogen plasma. The plasma containing at least one nitrogen radical species contacts the side surface of the high-dielectric constant dielectric layer 308 facing the separation grid 116. The substrate 114 or substrate stack 304 can be heated using a plurality of lamps 176 located on the second side of the substrate stack 304 opposite to the separation grid 116.

[0044]

[0048] In one or more implementations that can be combined with other implementations, the high-density plasma nitriding process of step 220 includes exposing the high-dielectric-constant dielectric layer 308 to additional radicals, such as hydroxide radicals, argon radicals, hydrogen radicals, or combinations thereof. In some implementations, the additional radicals can be formed within the active zone 172 inside the plasma source 125. For example, a gas injection insert 140 can introduce additional gases, including hydrogen, argon, nitrogen, helium, or mixtures thereof, into the active zone 172.

[0045]

[0049] The plasma nitriding process of step 220 may be carried out while maintaining a pressure in the range of about 1 Torr to about 20 Torr, for example, in the range of about 1 Torr to about 10 Torr, in the range of about 1 Torr to about 8 Torr, or in the range of about 1 Torr to about 5 Torr. In some implementations, the plasma nitriding process of step 220 may be carried out while maintaining a temperature in the range of about 400°C to about 700°C, for example, in the range of about 400°C to about 650°C, or in the range of about 550°C to about 650°C. In some implementations, the plasma nitriding process of step 220 may be carried out while operating the plasma source at a power in the range of about 5 kW to about 10 kW, for example, in the range of about 5 kW to about 8 kW, in the range of about 6 kW to about 8 kW, or in the range of about 7 kW to about 8 kW.

[0046]

[0050] During process 220, a carrier gas, such as argon, nitrogen, helium, or a combination thereof, is introduced into the active zone 11172 of the plasma source interior 111172 at a flow rate ranging from about 5,000 sccm to about 10,000 sccm, for example, from about 5,000 sccm to about 9,500 sccm, from about 5,500 sccm to about 8,500 sccm, from about 6,000 sccm to about 8,500 sccm, or from about 7,000 sccm to about 8,000 sccm. In some implementations, the carrier gas may be introduced over a period ranging from about 10 seconds to about 500 seconds (for example, from about 60 seconds to about 400 seconds, from about 90 seconds to about 300 seconds, or from about 120 seconds to about 300 seconds). The carrier gas can facilitate the flow of other process gases.

[0047]

[0051] While not strictly theoretical, exposing high-dielectric-constant dielectric materials to a high-density plasma nitriding process (i) increases the crystallinity of the high-dielectric-constant film through its relatively high temperature (w / heater temperature @ 400-600C and / or relatively high-temperature plasma gas), (ii) further passivates oxygen vacancies by high-density nitrogen radicals, and (iii) forms an oxidant diffusion barrier resulting from subsequent deposition and heat treatment of the high-dielectric-constant layer, ultimately increasing the k value and further suppressing leakage current. In addition, a high-density plasma nitriding process performed at relatively high temperatures, e.g., above 400°C, (iv) sufficiently increases the crystallinity in the high-dielectric-constant dielectric material, eliminating the additional heat treatment steps previously used.

[0048]

[0052] Optionally, in step 230, the high dielectric layer 308 is exposed to a high-density plasma oxidation process, as shown in Figure 3C. Exposure to the high-density oxidation process in step 230 can remove carbon impurities from the high dielectric layer 308 through a chemical reaction between carbon impurities and high-density oxygen radicals, and passivate oxygen vacancies with high-density oxygen radicals, which can ultimately increase the k-value by increasing the crystallinity of the high dielectric layer 308 and reduce leakage current by removing traps. In some embodiments, the high-density plasma oxidation process may be carried out by exposing the high dielectric layer 308 to a second radical (e.g., an oxygen radical).

[0049]

[0053] Referring to Figure 1, using the plasma processing system 100 disclosed herein, a plasma containing a second radical is formed within the active zone 172 inside the plasma source 125. For example, a gas injection insert 140 can introduce a second processing gas containing oxygen to form a plasma containing the second radical. The plasma may be an inductively coupled plasma generated in the gas injection channel 151 by the induction coil 130. The second processing gas may be selected from H2O, O2, O3, H2O2, NO2, N2O, or mixtures thereof. In some implementations, the second processing gas may be introduced into the active zone 172 inside the plasma source 125 in a second processing gas flow rate range of about 1000 standard cubic centimeters per minute (sccm) to about 10000 sccm. For example, the ranges are approximately 1,000 sccm to 9,500 sccm, 1,500 sccm to 9,500 sccm, 1,500 sccm to 8,500 sccm, 4,000 sccm to 8,500 sccm, or 6,000 sccm to 8,000 sccm. In some implementations, the second radical may be introduced over a time range of approximately 10 seconds to 500 seconds (e.g., approximately 60 seconds to 400 seconds, approximately 90 seconds to 300 seconds, or approximately 120 seconds to 300 seconds).

[0050]

[0054] The plasma source 120 is configured to flow a plasma containing a second radical through the holes 126 of the separation grid 116 toward the substrate support 112, thereby processing the substrate 114 or the substrate stack 304 placed thereon. The plasma source 120 can generate plasma-charged particles, such as ions and electrons, that recombine on the separation grid 116, so that only mostly or neutral plasma species pass through the separation grid 116, exposing the substrate 114 or substrate stack 304 to a high-density oxygen plasma. The plasma containing at least one oxygen radical species contacts the side surface of the high-dielectric constant dielectric layer 308 facing the separation grid 116. The substrate 114 or substrate stack 304 can be heated using a plurality of lamps 176 located on the second side of the substrate stack 304 opposite to the separation grid 116.

[0051]

[0055] The high-density oxygen plasma process of step 230 can be formed while maintaining a pressure in the range of about 1 Torr to about 20 Torr, for example, about 1 Torr to about 10 Torr, about 1 Torr to about 8 Torr, or about 1 Torr to about 5 Torr. In some embodiments, the high-density oxygen plasma process of step 230 is carried out at a temperature lower than the deposition temperature of the high-dielectric constant dielectric layer 308 to prevent oxidation of the lower electrode 306. The high-density oxygen plasma process of step 230 can be carried out while maintaining a temperature in the range of 350°C or less, for example, in the range of about 150°C to about 350°C, for example, in the range of about 150°C to about 300°C, or in the range of about 200°C to about 300°C. In some implementations, the high-density oxygen plasma process of step 230 can be carried out while operating the plasma source at a power in the range of about 5 kW to about 10 kW, for example, about 5 kW to about 8 kW, about 6 kW to about 8 kW, or about 7 kW to about 8 kW.

[0052]

[0056] During process 220, a carrier gas, such as argon, nitrogen, helium, or a combination thereof, can be introduced into the plasma source interior 111172 at a flow rate in the range of approximately 5,000 sccm to approximately 10,000 sccm, for example, approximately 5,000 sccm to approximately 9,500 sccm, approximately 5,500 to approximately 9,500 sccm, or approximately 7,000 sccm to approximately 8,000 sccm. In some implementations, the carrier gas can be introduced over a period ranging from approximately 10 seconds to approximately 500 seconds (e.g., approximately 60 seconds to approximately 400 seconds, approximately 90 seconds to approximately 300 seconds, or approximately 120 seconds to approximately 300 seconds). The carrier gas may facilitate the flow of other processing gases.

[0053]

[0057] While not strictly theoretical, exposing high-dielectric-constant dielectric materials to a high-density plasma oxidation process can (i) remove carbon impurities from the high-dielectric-constant dielectric material through a chemical reaction between carbon and high-density oxygen radicals, and (ii) passivate oxygen vacancies with high-density oxygen radicals, ultimately reducing leakage current by increasing the crystallinity within the high-dielectric-constant dielectric material and removing traps. However, to prevent oxidation of the lower electrode, the process should be applied below a high-dielectric-constant deposition temperature, for example, between approximately 150°C and 350°C, or between approximately 250°C and 350°C.

[0054]

[0058] In some implementations where operation 230 is not performed, after operation 220, the semiconductor device structure 300 may be subjected to additional processing to form a MIM capacitor structure. Additional processing may include, for example, the formation of an additional high-dielectric constant dielectric layer, an additional electrode layer, and at least one of the additional processing steps. In some implementations where operation 230 is performed, after operation 230, the semiconductor device structure 300 may be subjected to additional processing to form a MIM capacitor structure.

[0055]

[0059] Figure 4 is a flowchart showing a method 400 for processing a high dielectric layer according to one or more implementations of the present disclosure. Figures 5A-5C show diagrams of various steps in forming a semiconductor structure according to one or more implementations described herein. Although Figures 5A-5C are described in relation to method 400, the structures disclosed in Figures 5A-5C are not limited to method 400 and may instead be independent structures independent of method 400. Similarly, although method 400 is described in relation to Figures 5A-5C, method 400 is not limited to the structures disclosed in Figures 5A-5C and may instead be independent of the structures disclosed in Figures 5A-5C. Figures 5A-5C show only partial schematic diagrams of semiconductor device structures 500, and it should be understood that semiconductor device structures 500 may include any number of transistor sections and additional materials having the embodiments shown in the figures. Semiconductor device structures 500 may be MIM capacitors. Furthermore, while the method 400 shown in Figure 4 is described sequentially, it should be noted that other process sequences, including one or more steps that are omitted and / or added and / or rearranged in a different preferred order, are included within the scope of embodiments of the disclosure described herein.

[0056]

[0060] Method 400 is similar to Method 200, except that a high-density plasma oxidation process is performed before the high-density plasma nitriding process.

[0057]

[0061] In step 410, the substrate stack 304 is received. The substrate stack 304 may be positioned on the substrate support 112 of the plasma processing system 100 shown in Figure 1. In step 420, the high dielectric constant dielectric layer 308 is exposed to a high-density plasma oxidation process, as shown in Figure 5B. Step 420 may be carried out in the same manner as step 230. In step 430, the high dielectric constant dielectric layer 308 is exposed to a high-density plasma nitriding process, as shown in Figure 5C. Step 430 may be carried out in the same manner as step 220.

[0058]

[0062] After step 430, the semiconductor device structure 500 may be subjected to additional processing to form a MIM capacitor structure. The additional processing may include, for example, the formation of an additional high dielectric constant layer, an additional electrode layer, and at least one of the additional processing steps.

[0059]

[0063] While not strictly theoretical, it is believed that a dual treatment of plasma oxidation (PO) followed by plasma nitriding (PN) on a high-dielectric-constant layer can further increase the crystallinity of the high-dielectric-constant layer and further reduce leakage current compared to plasma nitriding alone. By applying plasma oxidation, it is possible to (i) remove carbon impurities from the high-dielectric-constant dielectric layer 308 through a chemical reaction between carbon and high-density oxygen radicals, and (ii) passivate oxygen vacancies with high-density oxygen radicals, which ultimately increases the k value by increasing the crystallinity of the high-dielectric-constant dielectric layer 308 and reduces its leakage current by removing traps. However, in order to prevent oxidation of the lower electrode, it is necessary to apply the plasma oxidation at a temperature below the high-dielectric-constant deposition temperature, for example, in the range of approximately 150°C to approximately 350°C. Subsequent plasma nitriding can (i) increase the crystallinity of the high dielectric layer 308 film through its relatively high temperature (w / heater temperature @ 400-600C and / or relatively high-temperature plasma gas), (ii) further passivate oxygen vacancies with high-density nitrogen radicals, and (iii) form a diffusion barrier against oxides resulting from the deposition of additional high dielectric layers and / or subsequent heat treatments, ultimately increasing the k value and further suppressing leakage current. In addition, plasma nitriding at relatively high temperatures, e.g., above 350°C, can (iv) sufficiently increase the crystallinity of HK and eliminate the additional heat treatment steps previously used.

[0060]

[0064] The aforementioned implementations of this disclosure have many advantages. However, this disclosure does not require that all advantageous features and advantages be incorporated into all implementations of this disclosure. It provides a high-density plasma processing process that reduces leakage current and increases capacitance of MIM capacitors. This process includes the removal of oxygen vacancies in the high dielectric layer, the prevention of increased interface layer thickness by forming a nitrogen layer between the high dielectric layer and the electrode, the formation of a barrier to prevent interdiffusion of impurities from the high dielectric layer and the electrode, and the improvement of crystallinity in the high dielectric layer without using currently practiced post-deposition annealing.

[0061]

[0065] This summary and detailed description, the claims, and the accompanying drawings refer to specific features (including process steps) of the disclosure. The disclosures herein should be understood to include all possible combinations of such specific features. For example, if a particular feature is disclosed in relation to a particular aspect, implementation, or example of the disclosure, or to a particular claim, that feature is available in combination with and / or in the context of other particular aspects and implementations of the disclosure, and throughout the disclosure.

[0062]

[0066] The implementations and all functional operations described in this specification may be implemented in digital electronic circuits, in computer software, firmware, or hardware (including the structural means and their structural equivalents disclosed in this specification), or in combination thereof. The implementations described herein may be implemented as one or more non-temporary computer program products (i.e., one or more computer programs tangibly embodied in a machine-readable storage device) for execution by a data processing device (e.g., a programmable processor, a computer, or a set of processors or computers) or for controlling the operation of such data processing device.

[0063]

[0067] The processes and logic flows described in this specification may be carried out by one or more programmable processors, which execute one or more computer programs to perform functions by operating on input data and generating outputs. The processes and logic flows may also be carried out by special-purpose logic circuits (e.g., field-programmable gate arrays (FPGAs) or application-specific integrated circuits (ASICs)), and the device may further be implemented as such special-purpose logic circuits.

[0064]

[0068] The term “data processing device” encompasses all devices, machines, and apparatus for processing data, including, for example, programmable processors, computers, or multiple processors or computers. In addition to hardware, a device may include code that creates the execution environment for the computer program in question (e.g., processor firmware, protocol stacks, database management systems, operating systems, or code comprising one or more of these). Processors suitable for running computer programs include, for example, both general-purpose and dedicated microprocessors, and any one or more processors in any type of digital computer.

[0065]

[0069] Computer-readable media suitable for storing computer program instructions and data include all forms of non-volatile memory, media and memory devices, including semiconductor memory devices (e.g., EPROM, EEPROM, and flash memory devices), magnetic disks (e.g., internal hard disks or removable disks), magneto-optical disks, and CD-ROM and DVD-ROM disks. Processors and memory can be supplemented by or incorporated into special-purpose logic circuits.

[0066]

[0070] The terms “comprises” and their grammatical equivalents are used herein to mean the optional presence of other components, ingredients, processes, etc. For example, an article “comprises” components A, B, and C may consist of components A, B, and C (i.e., consist only of components A, B, and C), or may include not only components A, B, and C, but also one or more other components. In addition, whenever the transitional phrase “comprising” or its grammatical equivalent precedes a composition, element, or group of elements, It should be understood that the transitional phrases "consisting essentially of," "consisting of," "selected from the group of consisting of," or "is" may precede the description of the same composition, element, or group of elements, and vice versa.

[0067]

[0071] This specification refers to a method comprising two or more defined steps, the defined steps of which may be performed in any order or simultaneously (unless the context excludes such possibility). The method may include one additional step performed before any of the defined steps, between two of the defined steps, or after all of the defined steps.

[0068]

[0072] When describing elements of this disclosure, or exemplary forms or implementations thereof, the articles "a," "an," "the," and "said" are intended to indicate that there is one or more elements.

[0069]

[0073] The expressions "comprising," "including," and "having" are intended to be comprehensive, meaning that there may be additional elements beyond those listed.

[0070]

[0074] The above description applies to the embodiments of this disclosure, but other embodiments and further embodiments of this disclosure may be devised without departing from the basic scope of this disclosure, and the scope of this disclosure is determined by the following claims.

Claims

1. A plasma processing method, The process involves receiving a substrate stack into a processing chamber, wherein the substrate stack includes a high dielectric constant layer formed on a metal electrode. Introducing the processing gas into a gas injection channel defined between the gas injection insert and the side wall of the plasma source, Inductively coupled plasma is generated in the gas injection channel using an induction coil positioned near the side wall and overlapping horizontally with the gas injection channel, wherein the generated plasma contains at least one nitrogen radical species. The plasma is supplied from the plasma source to the processing chamber connected to the plasma source, wherein the plasma flows through a separation grid placed between the plasma source and the substrate stack to be processed. Processing the substrate stack in the processing chamber, Bringing the plasma containing at least one nitrogen radical species into contact with the high dielectric layer facing the separation grid, and Heating the substrate stack using a plurality of lamps located on the second side of the substrate stack opposite to the separation grid. Processing the substrate stack including the above A method that includes this.

2. After processing the substrate stack with the plasma, Introducing an oxygen-containing gas into the gas injection channel of the plasma source, The process involves generating an oxygen plasma within the gas injection channel, wherein the oxygen plasma contains oxygen radicals. The oxygen plasma is supplied from the plasma source to the processing chamber, The process involves processing the substrate stack using the oxygen plasma in the processing chamber, Bringing the oxygen plasma containing the oxygen radicals into contact with the high dielectric layer facing the separation grid, and Heating the substrate stack using the plurality of lamps located on the second side of the substrate stack opposite to the separation grid. Processing the substrate stack including the above The method according to claim 1, further comprising:

3. The method according to claim 1, wherein processing the substrate stack in the processing chamber forms one or more nitrogen-containing diffusion barrier layers within the substrate stack.

4. The method according to claim 3, wherein one of the one or more diffusion barrier layers is formed within the high dielectric constant dielectric layer.

5. The method according to claim 3, wherein one of the one or more diffusion barrier layers is formed at the interface between the high dielectric constant dielectric layer and the metal electrode.

6. The method according to claim 1, wherein the high dielectric constant dielectric layer includes zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide.

7. The method according to claim 6, wherein the metal electrode comprises a metal nitride having a metal selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta).

8. The method according to claim 1, wherein the high dielectric constant dielectric layer is formed by an atomic layer deposition (ALD) process.

9. The process involves receiving a substrate stack containing a high dielectric layer formed on a metal electrode into a processing chamber, Introducing the processing gas into a gas injection channel defined between the gas injection insert and the side wall of the plasma source, A method of generating an inductively coupled plasma in the gas injection channel using an induction coil positioned near the side wall and overlapping horizontally with the gas injection channel, wherein the plasma is an inductively coupled plasma containing at least one oxygen radical species. The plasma is supplied from the plasma source to the processing chamber connected to the plasma source, wherein the plasma flows through a separation grid placed between the plasma source and the substrate stack to be processed. Processing the substrate stack in the processing chamber, Bringing the plasma containing at least one oxygen radical species into contact with the high dielectric layer facing the separation grid, and Heating the substrate stack using a plurality of lamps located on the second side of the substrate stack opposite to the separation grid. Processing the substrate stack including the above A plasma treatment method including [specific details omitted].

10. After processing the substrate stack with the plasma, Introducing a nitrogen-containing gas into the gas injection channel of the plasma source, The process involves generating a nitrogen plasma within the gas injection channel, wherein the nitrogen plasma contains nitrogen radicals. The nitrogen plasma is supplied from the plasma source to the processing chamber, The process involves processing the substrate stack using the nitrogen plasma in the processing chamber, Bringing the nitrogen plasma containing the nitrogen radicals into contact with the high dielectric layer facing the separation grid, and Heating the substrate stack using the plurality of lamps located on the second side of the substrate stack opposite to the separation grid. Processing the substrate stack including the above The method according to claim 9, further comprising:

11. The method according to claim 10, wherein processing the substrate stack using the nitrogen plasma forms one or more nitrogen-containing diffusion barrier layers within the substrate stack.

12. The method according to claim 11, wherein one of the one or more diffusion barrier layers is formed within the high dielectric constant dielectric layer.

13. The method according to claim 11, wherein one of the one or more diffusion barrier layers is formed at the interface between the high dielectric constant dielectric layer and the metal electrode.

14. The method according to claim 9, wherein the high dielectric constant dielectric layer includes zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide.

15. The method according to claim 14, wherein the metal electrode comprises a metal nitride having a metal selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta).

16. The method according to claim 9, wherein the high dielectric constant dielectric layer is formed by an atomic layer deposition (ALD) process.

17. A plasma processing system, A processing chamber that defines the processing space, Plasma source and A gas injection insert placed within the plasma source, A gas injection channel defined between the gas injection insert and the side wall of the plasma source, An induction coil is positioned close to the side wall and overlaps the gas injection channel horizontally, A separation grid that separates the plasma source from the processing space, System controller, Memory for storing computer-readable instructions, and A processor connected to the memory, comprising the computer-readable instructions, wherein the computer-readable instructions, when executed by the processor, Introducing the processing gas into the aforementioned gas injection channel, Using the induction coil, generate an inductively coupled plasma in the gas injection channel, wherein the plasma contains at least one nitrogen radical species. The plasma is supplied from the plasma source to the processing space, wherein the plasma flows through the separation grid. Processing a substrate stack in the processing space, wherein the substrate stack includes a high dielectric constant layer formed on a metal electrode, and processing the substrate stack is Bringing the plasma containing at least one nitrogen radical species into contact with the high dielectric layer facing the separation grid, and Heating the substrate stack using a plurality of lamps located on the second side of the substrate stack opposite to the separation grid. Processing the substrate stack including the above A processor that performs multiple processes, including System controller including A plasma processing system equipped with [the following features].

18. After the substrate stack is treated with the plasma, the plurality of steps are carried out. Introducing an oxygen-containing gas into the gas injection channel of the plasma source, The process involves generating an oxygen plasma within the gas injection channel, wherein the oxygen plasma contains oxygen radicals. Supplying the oxygen plasma from the plasma source to the processing space, The process involves processing the substrate stack using the oxygen plasma within the processing space, Bringing the oxygen plasma containing the oxygen radicals into contact with the high dielectric layer facing the separation grid, and Heating the substrate stack using the plurality of lamps located on the second side of the substrate stack opposite to the separation grid. Processing the substrate stack including the above The system according to claim 17, further comprising the above.

19. The system according to claim 17, wherein processing the substrate stack in the processing space forms one or more nitrogen-containing diffusion barrier layers within the substrate stack.

20. The system according to claim 17, wherein the high dielectric constant dielectric layer comprises zirconium oxide, hafnium oxide, or a combination of zirconium oxide and hafnium oxide, and the metal electrode comprises a metal nitride containing a metal selected from titanium (Ti), molybdenum (Mo), tungsten (W), or tantalum (Ta).

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