A versatile control algorithm for rapid thermal processing (RTP) substrate temperature.

Abstract

Embodiments disclosed herein include a method of processing a substrate. In one embodiment, the method includes detecting one or more substrate parameters of a substrate in a processing chamber and heating the substrate to a first temperature with an open-loop tuning (OLT) heat process based on the one or more substrate parameters. In one embodiment, the method may further include placing the substrate on an edge ring and heating the substrate to a second temperature with a low-temperature closed-loop controller. In one embodiment, the method further includes heating the substrate to a third temperature with a high-temperature closed-loop controller.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Non-provisional Application No. 17 / 090,696, filed Nov. 05, 2020, the entire contents of which are incorporated herein by reference. Embodiments of the present disclosure relate to the field of semiconductor processing, and in particular to rapid thermal processing (RTP) control algorithms and systems for improving robustness and throughput. [Background technology]

[0002] Description of Related Art Rapid thermal processing (RTP) is a semiconductor processing technique that allows for conformal deposition of films (e.g., oxides, nitrides) over three-dimensional features on semiconductor substrates such as silicon wafers. The ability to form conformal films over three-dimensional features has led to increased use of RTP as semiconductor devices become more complex. Currently, process engineers are faced with the difficult task of selecting from a list of process control settings to provide the desired results (e.g., film thickness, thickness uniformity, film composition, etc.). Process control settings may include, but are not limited to, a list of closed-loop controllers, open-loop options, recipe step options, and end conditions. Depending on the options selected, throughput may also increase or decrease.

[0003] As a result, process engineers are faced with an overwhelming number of options to choose correctly in order to deliver the required device outcomes while maintaining acceptable throughput. Selecting the appropriate process control settings is further complicated by the fact that incoming wafers also vary in substrate properties. For example, wafer-to-wafer non-uniformities can include differences in thermal absorptivity, front surface reflectivity, and dopant concentrations, to name a few.

[0004] In addition to conformal deposition processing, RTP can be used for many other process steps in semiconductor manufacturing process flows. For example, RTP can be used for dopant activation, metal reflow, and / or metal annealing. As with conformal deposition, many different process control settings must be controlled to produce the desired results on the wafer or device. The control settings are typically selected by a process engineer. As such, the desired results on the wafer or device depend on the skill and experience of the process engineer. Similarly, non-uniformity between substrates can result in non-uniform results even when using a single set of process control settings to process each lot of substrates. Summary of the Invention

[0005] Embodiments disclosed herein include a method of processing a substrate. In one embodiment, the method includes detecting one or more substrate parameters of a substrate in a processing chamber and heating the substrate to a first temperature in an open loop tuning (OLT) heat process based on the one or more substrate parameters. In one embodiment, the method may further include placing the substrate on an edge ring and heating the substrate to a second temperature using a low temperature closed loop controller. In one embodiment, the method further includes heating the substrate to a third temperature using a high temperature closed loop controller.

[0006] The embodiments disclosed herein may include a rapid thermal processing (RTP) tool. In one embodiment, the RTP tool comprises a process chamber and an edge ring within the process chamber. The RTP tool may further include lift pins for raising and lowering the substrate to and from the edge ring and a sensor for determining a substrate parameter of the substrate. In one embodiment, a lamp assembly is provided above the process chamber. In one embodiment, the RTP tool further comprises a controller for controlling a temperature of the substrate in the chamber. In one embodiment, the controller is communicatively coupled to the lamp assembly, the sensor, and the lift pin. In one embodiment, the controller includes an algorithm for selecting a temperature controller for different temperature regimes based on the substrate parameter determined by the sensor.

[0007] The embodiments disclosed herein may further include a method for depositing a film on a substrate using a rapid thermal processing (RTP) tool. In an embodiment, the method includes detecting one or more substrate parameters of a substrate in a processing chamber using transmission pyrometry. In an embodiment, the one or more substrate parameters include one or more of thermal absorption, front surface reflectance, and doping concentration. In an embodiment, the method further includes heating the substrate to a first temperature with an open loop tuning (OLT) heat process based on the one or more substrate parameters and placing the substrate on an edge ring. In an embodiment, the method further includes heating the substrate to a second temperature using a low temperature closed loop controller, and in an embodiment, at the second temperature, the substrate is opaque. The method may further include heating the substrate to a third temperature using a high temperature closed loop controller and flowing a process gas into the processing chamber while the substrate is at the third temperature. In an embodiment, the method may further include cooling the substrate to a fourth temperature and lifting the substrate from the edge ring. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a process flow diagram illustrating a rapid thermal processing (RTP) operation performed with the aid of a control algorithm that uses sensed substrate parameters as inputs, according to one embodiment. [Figure 2A] FIG. 1 illustrates a cross-sectional view of an RTP tool with a substrate lifted on lift pins, according to one embodiment. [Figure 2B] 1 illustrates a cross-sectional view of an RTP tool with a substrate supported by an edge ring in a chamber, according to one embodiment. [Diagram 3] 2 is a block diagram of an RTP tool illustrating a control algorithm and some of the features controlled by the control algorithm, according to one embodiment. [Figure 4] FIG. 1 illustrates a block diagram of an exemplary computer system according to one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] A rapid thermal processing (RTP) control algorithm and system for improving robustness and throughput are described herein. In the following description, numerous specific details are presented to provide a thorough understanding of the embodiments of the present disclosure. It will be apparent to one of ordinary skill in the art that the embodiments of the present disclosure may be practiced without these specific details. In other instances, well-known aspects, such as the fabrication of integrated circuits, have not been described in detail in order to not unnecessarily obscure the embodiments of the present disclosure. Furthermore, it should be understood that the various embodiments illustrated in the figures are illustrative representations and are not necessarily drawn to scale.

[0010] As mentioned above, the robustness and throughput of currently existing RTP tools are largely limited by the skill of the process engineers responsible for selecting process control settings. In addition, wafer-to-wafer non-uniformity further increases the complexity of selecting appropriate process control settings. Thus, embodiments disclosed herein include RTP control algorithms and systems that improve the robustness and throughput of a given RTP process.

[0011] In one embodiment, the appropriate process control settings are dictated by one or more substrate parameters determined by the RTP tool. For example, a process such as transmission pyrometry can be used to determine the dopant concentration of the substrate and / or reflectance measurements by the RTP tool. Such measurements can be made quickly (e.g., in about one second or less) and do not significantly slow down throughput. Once the one or more substrate parameters are detected, a control algorithm can select one or more process control settings that provide the desired output with a predictable throughput. In some embodiments, the process engineer may be responsible for minimal inputs to the system, such as soak temperatures and times.

[0012] 1, a process flow diagram 170 is shown illustrating a process for performing an RTP operation on a substrate, according to one embodiment. The flow diagram 170 may begin with operation 171, which includes detecting a substrate parameter. In one embodiment, the substrate parameter may include one or more of thermal absorption, front surface reflectance, and dopant concentration. In one embodiment, detecting the substrate parameter may include using one or more non-destructive analytical methods, such as, but not limited to, transmission pyrometry, reflectance reading, etc. Using such analytical methods, the substrate parameter may be detected quickly. For example, the substrate parameter may be determined in about one second or less. Rapid detection of the substrate parameter may allow each substrate to be analyzed during processing. Alternative embodiments may include analyzing one substrate per lot, or substrate analysis may be performed at any frequency.

[0013] In an exemplary embodiment, operation 171 may include determining a dopant concentration of the substrate. In an embodiment, the dopant concentration is determined using wavelength transmission of electromagnetic waves through the substrate. For example, a nominal voltage (e.g., 10V or less) is applied to a heat lamp in the tool above the substrate to provide a source of electromagnetic radiation. Notably, different dopant concentrations absorb the electromagnetic waves differently from one another. An electromagnetic wave detector (e.g., a photodetector) is on the substrate opposite the heat lamp. The detector may be used to obtain a relative intensity of the electromagnetic waves through the substrate. The detected intensity can be compared to a database containing a relationship between intensity and dopant concentration to provide a dopant concentration for the detected intensity.

[0014] In an embodiment, reflectance measurements may be taken at various locations within the processing tool. In certain embodiments, reflectance measurements may be taken as the substrate passes through a port into the processing chamber. For example, a light source (e.g., laser, diode, etc.) may illuminate the substrate and a light detector (e.g., camera, photodiode, etc.) may detect the reflected light. In an embodiment, the light source may be a single wavelength light source, or the light source may include a broad spectrum. In the case of a single wavelength light source, multiple light sources with different wavelengths may also be used to provide reflectance readings at different wavelengths.

[0015] In one embodiment, the flow diagram 170 may continue with operation 172, which includes heating the substrate with an open loop tuning (OLT) controller that is selected based on the substrate parameters. Open loop tuning generally refers to the process of increasing the temperature of the substrate according to an empirically derived algorithm. In one embodiment, the selection of the OLT controller based on the substrate parameters may be performed by a control algorithm integrated into the RTP tool.

[0016] In the example where a dopant concentration of the substrate is detected in operation 171, the selected OLT controller is optimized to provide controlled heating of the substrate based on the amount of electromagnetic radiation absorbed by the substrate. For example, a substrate with a low dopant concentration will absorb less energy than a substrate with a high dopant concentration. In a particular embodiment, a dopant concentration of 1×10 18 atoms / cm 3 Substrates with doping levels below 1×10 can absorb substantially the same amount of energy. 20 atoms / cm 3 A substrate having a doping level of 1×10 or more can absorb substantially the same amount of energy. Thus, the first OLT controller 18 atoms / cm 3 The second OLT controller can be selected for any substrate with a doping level below 1×10 20 atoms / cm 3 Any substrate having a doping level equal to or greater than 1000 nm may be selected.

[0017] In one embodiment, the first OLT controller may include a substantially non-uniform lamp voltage between different radial zones of the lamps in the tool. For example, a central zone of the lamps may have a higher voltage than an outer zone of the lamps. The non-uniform voltage may provide uniform heating of the substrate. In one embodiment, the second OLT controller may configure a substantially uniform lamp voltage between different radial zones of the lamps in the tool.

[0018] 1×10 18 atoms / cm 3 From the above, 1×10 20 atoms / cm 3 At doping levels between 1×10 and 1×10, the absorption of energy becomes more variable; that is, a small change in dopant concentration can result in a large change in the level of electromagnetic radiation absorbed. 18 atoms / cm 3 From the above, 1×10 20 atoms / cm 3Multiple OLT controllers can be provided for doping levels ranging from 1×10 to 1×10 or higher, where the constant ramp voltage of the OLT recipe is iteratively varied between the setting of a first OLT controller and the setting of a second OLT controller. 18 atoms / cm 3 For doping levels close to 1×10, there is a spread between the voltage in the inner region of the lamp and the voltage in the outer region of the lamp, 20 atoms / cm 3 The spread between the voltage in the inner region of the lamp and the voltage in the outer region of the lamp converges as the 18 atoms / cm 3 From 1×10 20 atoms / cm 3 A number of OLT controllers for doping levels between may be derived empirically or computationally and stored in a database available to the control algorithm integrated with the RTP tool.

[0019] In one embodiment, the control of the substrate temperature by the OLT controller is performed before the substrate is placed on the edge ring. That is, the OLT controller can be used while the substrate is supported on the edge ring by the lift pins. In this manner, the substrate heating initiation process can be performed separately from the edge ring heating. In some embodiments, the end point of the use of the OLT controller can be the end point of a fixed time. The use of a fixed time end point can ensure repeatability of throughput between substrates, even substrates with different substrate parameters. In one embodiment, the substrate can be heated to a first temperature by the use of the OLT controller. The first temperature can be a temperature at which the substrate is still transparent to infrared (IR) electromagnetic radiation. For example, the first temperature can be about 300° C. or less. In some embodiments, the substrate parameters can be measured again during operation 172.

[0020] In one embodiment, flow diagram 170 may continue with processing operation 173, which includes placing the substrate on an edge ring in the processing chamber. The substrate may be placed on the edge ring by lowering the substrate by retracting the lift pins on which the substrate is supported during operations 171 and 172. The edge ring may support the substrate such that the substrate is elevated above a bottom surface of the chamber, such as a reflector plate. The reflector plate allows for heating of the backside of the substrate in addition to the frontside during one or more processing operations.

[0021] In one embodiment, the flow diagram 170 may continue with a process operation 174 that includes increasing the temperature of the substrate to a second temperature by a low temperature closed loop controller. Closed loop control of the substrate temperature generally refers to linearly increasing the substrate temperature. The low temperature closed loop controller may be a controller selected from a group of available low temperature controllers. That is, a control algorithm integrated into the RTP tool may select one of the low temperature closed loop controllers based on substrate parameters determined in a previous process operation. Different low temperature closed loop controllers may provide different ramp rates used to heat the substrate from the first temperature to the second temperature, and the selected low temperature closed loop controller provides the best ramp rate suitable for the given substrate parameters.

[0022] In one embodiment, all of the wafer information and recipe information are integrated to automatically assign a low temperature controller for a process for heating the substrate. A process engineer may have various customized recipes for different product wafers. Thus, the second temperature may vary (e.g., between 450°C and 600°C). If a single low temperature controller is used, the low temperature controller may work well for a second temperature (e.g., 550°C), but may cause a large temperature spread or overshoot when another recipe has a different second temperature (e.g., 450°C). In addition, some applications may require a low thermal budget for the low temperature controller following a fast spike. In other words, one low temperature controller may not fit many different heating requirements. Thus, the selected low temperature controller may depend on one or more substrate parameters and heating requirements selected by the process engineer. The auto-assign low temperature controller helps to change the control parameters and optimize the control algorithm for different second temperatures of various recipes within one second. Therefore, the process engineer does not have to go to the trouble of assigning the wrong controller or testing all the different low temperature controllers.

[0023] In one embodiment, the second temperature may be the temperature at which the substrate transitions from transparent to opaque. For example, for a silicon substrate, the second temperature may be greater than about 550° C. In another embodiment, the second temperature may be between about 550° C. and about 650° C.

[0024] In one embodiment, the flow diagram 170 may continue with operation 175, which includes ramping the temperature of the substrate to a third temperature by the high temperature closed-loop controller. The high temperature closed-loop controller may be recipe dependent. That is, in some embodiments, the selection of the high temperature closed-loop controller may not be dependent on the substrate parameters. However, in some embodiments, the selection of the high temperature closed-loop controller may be informed by the substrate parameters. In one embodiment, the third temperature may be greater than or equal to about 1,000° C. In certain embodiments, the third temperature may be between about 1,000° C. and about 1,200° C.

[0025] In one embodiment, the high temperature closed loop controller may include a saw ramp rate or a spike ramp rate. The saw ramp rate is generally slower than the spike ramp rate. For example, the saw ramp rate may be about 75° C. / sec and the spike ramp rate may be about 200° C. / sec. The selection of the high temperature closed loop controller may be selected by a process engineer. In an embodiment where the selection of the high temperature closed loop controller is informed by substrate parameters, a control algorithm may be used to make the selection. In one embodiment, the high temperature closed loop controller follows a fixed ramp up set point. Such a fixed ramp up set point allows the substrate to be heated in an optimal manner without unnatural lamp power spikes.

[0026] In one embodiment, the flow diagram 170 may continue with operation 176, which includes cooling the substrate with a cooling closed loop controller. The cooling may be performed while the substrate is on the edge ring. In one embodiment, the cooling may be performed until a fourth temperature is reached. For example, the fourth temperature may be about 850° C. or less.

[0027] After the fourth temperature is reached, the flow diagram 170 may continue with operation 177, which includes lifting the substrate off the edge ring by the lift pins. Once off the edge ring, the closed loop controller may continue to cool the substrate to the desired temperature. In one embodiment, a process engineer may select the fourth temperature. In some embodiments, the control algorithm may provide a throughput estimate to the process engineer based on the selected fourth temperature. After the substrate has sufficiently cooled, the substrate may be removed from the RTP chamber.

[0028] In the embodiments disclosed above, heating and cooling of the substrate is disclosed. It should be understood that one or more process gases are flowed into the chamber during one or more of the heating and cooling operations to form a film on the substrate. In certain embodiments, the film is a conformal film. The process gas may be any process gas(es) suitable for forming a layer having a desired composition. For example, in embodiments where the layer is a nitrogen-containing layer, the process gas may comprise, but is not limited to, a nitrogen-containing gas such as nitrogen gas (N2), ammonia (NH), oxide (NO), nitrous oxide (NO), etc. In embodiments where the layer is an oxygen-containing layer, the process gas may comprise, but is not limited to, hydrogen (H2) and oxygen (O2). The process gas may be provided at any suitable flow rate, for example, from about 1 standard liter per minute (slm) to about 5 slm. In some embodiments, the flow rate may be adjusted to control the thickness and / or uniformity of the layer.

[0029] In one embodiment, a system implementing the flowchart 170 has the capability to provide process engineers with accurate substrate processing time information for each lot based on input parameters such as soak time and soak temperature. The total recipe time is based on soak time, soak temperature, and overhead time. The overhead time is the sum of the substrate exchange time and the time required to heat the wafer to the soak temperature and cool it down from the soak temperature. These values ​​can be accurately calculated by simulation. Machine learning algorithms given real data of the processing of substrates may be used to improve the calculated processing time. If the actual value deviates from the calculated value or a reference value (e.g., data from a previous lot of similar substrates), a correction is suggested and sent to the automation software. The automation software can control the processing tools to bring the processing recipe back to the calculated or reference value.

[0030] In one embodiment, the suggested correction from the automation software may include changing the robot speed if the wafer exchange time is different. The correction may also include checking the selected OLT tuner if the time to heat the substrate to the first and second temperatures is different than expected. The correction may also include rechecking the parameters of the low temperature controller (e.g., dopant concentration or reflectivity). Based on context information such as substrate parameters and recipe parameters, the automation software decides to modify the robot instructions or OLT controller to address the suggestion from the system. That is, some lots may have new wafer parameters that do not have the optimized OLT and low temperature control options. In such cases, the lot is flagged with a different heating time and a better OLT controller is found to address the issue. The automation software may also allow for recipe time differences.

[0031] 2A and 2B, cross-sectional views of an RTP tool 200 that may be used to perform the process of flow diagram 170 are shown, according to various embodiments. In FIG. 2A, a substrate 201 is supported above an edge ring 220 by lift pins 210. In FIG. 2B, the lift pins 210 are retracted and the substrate 201 is supported by the edge ring 220.

[0032] As shown in FIGS. 2A and 2B, the RTP tool 200 includes a processing region 215. The processing region 215 is defined by a reflector plate 222, sidewalls 223, and a window 230 below the substrate 201. The substrate 201 can be inserted through a slit valve (not shown) onto the processing region 215 and the lift pins 210. The lift pins 210 may extend through the reflector plate 222. In one embodiment, the lift pins 210 are actuated by a linear actuator mechanism (not shown). The lift pins 210 may be controlled by a control algorithm (not shown) embedded within the RTP tool 200. For example, the control algorithm may dictate when the lift pins 210 should extend and / or retract to position the substrate 201 on the edge ring 220 or to lift the substrate 201 off the edge ring 220.

[0033] In one embodiment, the reflector plate 222 includes a material that reflects energy to uniformly heat the substrate 201. That is, the reflector plate 222 reflects energy to the backside of the substrate 201 to facilitate uniform heating of the substrate 201. In some embodiments, one or more sensors 217 can pass through the reflector plate 222 to measure substrate parameters of the substrate. For example, the one or more sensors 217 can include a transmission pyrometry sensor, or the like.

[0034] In one embodiment, the window 230 provides an interface with the sidewall 223 to seal the processing region 215. The window 230 includes a material transparent to the energy from one or more lamps 236. For example, the window may be a glass window, or the like. In one embodiment, a lamp assembly 235 is provided over the window 230. The lamp assembly 235 includes a plurality of lamps 236. The lamps 236 may be halogen lamps, such as tungsten halogen lamps. The lamps facilitate rapid heating of the substrate 201. In one embodiment, the lamps 236 may be individually controllable or may be controllable in groups. For example, the lamps 236 are grouped in concentric rings, each of which is individually controllable. The lamps 236 may be controlled by a control algorithm to perform an RTP process on the substrate, such as the process described above with respect to FIG. 1.

[0035] In one embodiment, one or more process gases may be flowed into the processing region 215. The process gases may be flowed into the chamber via a cartridge (not shown). For example, the cartridge may be provided through the sidewall 223 of the RTP tool 200. The cartridge may receive gases from one or more gas sources, such as, but not limited to, a nitrogen-containing source gas, a hydrogen-containing source gas, and / or an oxygen-containing source gas.

[0036] 3, a schematic diagram of an RTP tool 300 according to one embodiment is shown. In one embodiment, the RTP tool 300 may include a control algorithm 380. The control algorithm 380 may be a control algorithm suitable for implementing an RTP process, such as the RTP process 170 described above with respect to FIG. 1. In particular, the control algorithm 380 may be communicatively coupled to the lamps 336, the lift pins 310, and a sensor 317. The sensor 317 may be suitable for determining one or more substrate parameters of a substrate processed in the RTP tool 300. For example, the sensor 317 may include a transmission pyrometer. The sensor 317 may be suitable for determining substrate parameters such as, but not limited to, thermal absorption, front surface reflectance, and dopant concentration of the substrate.

[0037] In one embodiment, the control algorithm 380 takes substrate parameters from the sensors 317 as input and outputs a process recipe customized for the given substrate parameters. For example, the process recipe may include a selection of an OLT controller, a low temperature closed-loop controller, and / or a high temperature closed-loop controller that provides a desired process result at an appropriate process throughput. In one embodiment, the various controllers from which the control algorithm makes the selection may be stored in a recipe server 390. The recipe server 390 may be external to the RTP tool 300. However, in other embodiments, the recipe server 390 may be implemented in a memory within the RTP tool 300.

[0038] In one embodiment, the control algorithm 380 is also coupled to the lamps 336 and the lift pins 310. Thus, in addition to controlling the substrate placement within the RTP tool 300 (e.g., on or off the edge ring), the control algorithm 380 can cause the RTP tool 300 to heat and / or cool the substrate.

[0039] The use of the control algorithm 380 has the advantage of simplifying the selections that a process engineer needs to make. For example, the process engineer only needs to select the soak temperature and time. The control algorithm 380 then automatically generates the remainder of the recipe based on the detected substrate parameters. Thus, the complexity of designing an RTP process is reduced.

[0040] FIG. 4 shows a schematic diagram of a machine in the exemplary form of a computer system 400 within which a set of instructions may be executed to cause the machine to perform any one or more of the methods described herein. In alternative embodiments, the machine may be connected (e.g., networked) to other machines in a local area network (LAN), an intranet, an extranet, or the Internet. The machine may function as a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The machine may be a personal computer (PC), a tablet PC, a set-top box (STB), a personal digital assistant (PDA), a mobile phone, a web appliance, a server, a network router, a switch, or a bridge, or any machine capable of executing a set of instructions (sequential or otherwise) that define the operations performed by the machine. Furthermore, although a single machine is shown, the term "machine" should also be construed to include any collection of machines (e.g., computers) that individually or jointly execute a set (or sets) of instructions to perform any one or more of the methods described herein.

[0041] The exemplary computer system 400 includes a processor 402, a main memory 404 (e.g., read only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 406 (e.g., flash memory, static random access memory (SRAM), MRAM, etc.), and a secondary storage device 418 (e.g., a data storage device), which communicate with each other via a bus 430.

[0042] Processor 402 represents one or more general-purpose processing devices, such as a microprocessor, a central processing unit, etc. More specifically, processor 402 may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, a processor implementing other instruction sets, or a processor implementing a combination of instruction sets. Processor 402 may also be one or more special purpose processing devices, such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), a network processor, etc. Processor 402 is configured to execute processing logic 426 for performing the operations described herein.

[0043] Computer system 400 may further include a network interface device 408. Computer system 400 may also include a video display unit 410 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 412 (e.g., a keyboard), a cursor control device 414 (e.g., a mouse), and a signal generating device 416 (e.g., a speaker).

[0044] The secondary storage 418 may include a machine-accessible storage medium (or specifically a computer-readable storage medium) 432 having stored thereon one or more sets of instructions (e.g., software 422) embodying any one or more of the methods or functions described herein. The software 422 may reside, completely or at least partially, within the main memory 404 and / or the processor 402 while it is being executed by the computer system 400, with the main memory 404 and the processor 402 also constituting machine-readable storage media. The software 422 may further be transmitted or received over the network 420 via the network interface device 408.

[0045] While an exemplary embodiment illustrates machine-accessible storage medium 432 as a single medium, the term "machine-readable storage medium" should be interpreted to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) on which one or more sets of instructions are stored. The term "machine-readable storage medium" should also be interpreted to include any medium capable of storing or encoding a set of instructions for execution by a machine that cause the machine to perform any one or more of the methods of the present invention. Thus, the term "machine-readable storage medium" should be interpreted to include, but is not limited to, solid-state memories, optical media, and magnetic media.

[0046] In one embodiment of the present disclosure, a machine-accessible storage medium has instructions stored thereon that cause a data processing system to execute a method for generating and executing a rapid thermal processing (RTP) operation using a control algorithm that detects substrate parameters and selects a controller based on the substrate parameters.

[0047] Thus, a method and apparatus is disclosed for generating and executing a rapid thermal processing (RTP) operation using a control algorithm that senses substrate parameters and selects a controller based on the substrate parameters.

Claims

1. 1. A method for processing a substrate, comprising: detecting a dopant concentration of a substrate in a processing chamber, the detecting the dopant concentration comprising: transmitting an electromagnetic wave through the substrate; detecting an absorption of the wavelength transmission of the electromagnetic wave by the substrate with an electromagnetic wave detector; and comparing the absorption of the wavelength transmission of the electromagnetic wave by the substrate to a database containing a relationship between intensity and the dopant concentration; heating the substrate to a first temperature by an open loop tuning (OLT) heat process based on the detected dopant concentration of the substrate; placing the substrate on an edge ring; heating the substrate to a second temperature with a low temperature closed loop controller selected from a group of available low temperature controllers; heating the substrate to a third temperature with a high temperature closed loop controller, the third temperature being between 1,000° C. and 1,200° C., and the recipe of the high temperature closed loop controller being a soak recipe including a soak ramp rate of 75° C. / sec; cooling the substrate to a fourth temperature of 850° C.; and Lifting the substrate from an edge ring at the fourth temperature; and Including, The method of claim 1, wherein the extent to which the substrate is heated to the first temperature is determined using one of the low temperature closed loop controllers selected based on one or more substrate parameters determined in a previous processing operation.

2. The method of claim 1 , wherein the dopant concentration of the substrate is detected using transmission pyrometry.

3. The method of claim 2 , wherein the transmission pyrometry is performed in less than one second.

4. The method of claim 1 , wherein heating the substrate to the first temperature is performed for a fixed period of time.

5. The method of claim 1 , wherein the second temperature is no greater than 650° C.

6. The method of claim 5 , wherein the substrate is opaque at the second temperature.

7. The method of claim 1 , wherein the processing chamber is a rapid thermal processing (RTP) chamber.

8. The method of claim 1 , wherein the low temperature closed loop controller for heating the substrate to the second temperature is selected based on the one or more substrate parameters.

9. Finding deviations in recipe times for a processing method for the substrate; modifying the recipe time by adding an additional controller to an existing list, the additional controller being based on actual data obtained during the processing method of the substrate; The method of claim 1 further comprising:

10. a processing chamber; an edge ring for the processing chamber; lift pins for raising and lowering the substrate onto and away from the edge ring; a sensor for determining a substrate parameter of the substrate; a lamp assembly above the processing chamber; a controller for controlling a temperature of the substrate in the processing chamber, the controller communicatively coupled to the lamp assemblies, the sensors, and the lift pins, the controller including an algorithm for selecting a temperature regime for different temperature regimes based on the substrate parameters determined by the sensors; Equipped with the temperature controller comprises a first temperature controller for increasing a temperature of the substrate to a first temperature, and a second temperature controller for increasing the temperature from the first temperature to a second temperature; the controller selecting a recipe for increasing the temperature from the second temperature to a third temperature; a process gas is flowed into the process chamber while the substrate is at the third temperature; Rapid Thermal Processing (RTP) Tools.

11. The RTP tool of claim 10 , wherein the substrate parameters include one or more of thermal absorptivity, front surface reflectivity, and doping concentration.

12. The RTP tool of claim 10, wherein the temperature controller is an open loop tuning (OLT) controller.

13. The RTP tool of claim 10, wherein the temperature controller is a closed loop controller.

14. 1. A method for depositing a film on a substrate by a rapid thermal processing (RTP) tool, comprising: Detecting one or more substrate parameters of a substrate in a processing chamber using transmission pyrometry, the one or more substrate parameters including one or more of thermal absorption, front surface reflectance, and doping concentration; heating the substrate to a first temperature by an open loop tuning (OLT) heat process based on the one or more substrate parameters; placing the substrate on an edge ring; heating the substrate by a low temperature closed loop controller to a second temperature, the substrate being opaque at the second temperature; heating the substrate to a third temperature with a high temperature closed loop controller; flowing a process gas into the process chamber while the substrate is at the third temperature; cooling the substrate to a fourth temperature; Lifting the substrate away from the edge ring; A method comprising:

15. 15. The method of claim 14, wherein the second temperature is less than or equal to 650°C.

16. 15. The method of claim 14, wherein the transmission pyrometry is performed in less than one second.

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