Method for producing raw material solution, method for film formation, and product lot

Abstract

The present invention relates to: a method for producing a source solution that is used for the formation of a film by a mist CVD process, in which the temperature at which a solute containing a metal element is mixed with a solvent and the resultant product is agitated is 30°C or higher; and a method for forming a film by mist CVD using a source solution produced by the method for producing a source solution. Accordingly, provided are: a method for producing a source solution which is used for the formation of a film by a mist CVD process and enables the formation of a film with an excellent film formation speed and with excellent reproducibility of the chemical composition in the film even when a solid solution of at least two elements is formed into the film; and a method for forming a film by mist CVD with an excellent film formation speed and with excellent reproducibility of the chemical composition in the film even when a solid solution of at least two elements is formed into the film.

Description

[Technical field]

[0001] The present invention relates to a method for producing a raw material solution for film formation by a mist CVD method, a film formation method by the mist CVD method, and a product lot of a crystalline oxide film. [Background technology]

[0002] Previously, high vacuum deposition equipment capable of realizing non-equilibrium conditions, such as pulsed laser deposition (PLD), molecular beam epitaxy (MBE), and sputtering, have been developed, making it possible to produce oxide semiconductors that could not be produced by conventional melt methods. In addition, the mist chemical vapor deposition (Mist CVD) method, which uses atomized mist-like raw materials to grow crystals on a substrate, has been developed, making it possible to produce gallium oxide (α-Ga2O3) with a corundum structure. As a semiconductor with a large band gap, α-Ga2O3 is expected to be applied to next-generation switching elements that can achieve high voltage resistance, low loss, and high heat resistance.

[0003] Regarding the mist CVD method, Patent Document 1 describes a tubular furnace type mist CVD apparatus. Patent Document 2 describes a fine channel type mist CVD apparatus. Patent Document 3 describes a linear source type mist CVD apparatus. Patent Document 4 describes a tubular furnace mist CVD apparatus, which differs from the mist CVD apparatus described in Patent Document 1 in that a carrier gas is introduced into the mist generator. Patent Document 5 describes a mist CVD apparatus in which a substrate is placed above a mist generator, and further a susceptor is a rotating stage mounted on a hot plate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 1-257337 [Patent Document 2] JP 2005-307238 A [Patent Document 3] JP 2012-46772 A [Patent Document 4] Patent No. 5397794 [Patent Document 5] JP 2014-63973 A Summary of the Invention [Problem to be solved by the invention]

[0005] Unlike other CVD methods, the mist CVD method does not require high temperatures and can produce metastable crystal structures such as the corundum structure of α-Ga2O3. However, this method has the problem of low film formation speed. In addition, when forming a solid solution of two or more elements, such as a solid solution with aluminum oxide or indium oxide, the reproducibility of the composition in the film is poor.

[0006] The present invention has been made to solve the above problems, and has an object to provide a method for producing a raw material solution for film formation by a mist CVD method, which has an excellent film formation speed and enables film formation with excellent reproducibility of the composition in the film even when a solid solution of two or more elements is formed, and a product lot of a crystalline oxide film that has very good reproducibility when used as a semiconductor device and is industrially useful. [Means for solving the problem]

[0007] The present invention has been made to achieve the above-mentioned object, and provides a method for producing a raw material solution for film formation by a mist CVD method, in which a solute containing a metal element is mixed with a solvent and stirred at a temperature of 30°C or higher.

[0008] According to such a method for producing a raw material solution, it is possible to produce a raw material solution that can increase the film formation rate when forming a film by the mist CVD method, and further, can improve the reproducibility of the composition in the film even when forming a film of a solid solution of two or more elements.

[0009] At this time, the method for producing the raw material solution may be such that the stirring temperature is 35° C. or higher.

[0010] This makes it possible to stably produce a raw material solution that can further improve the film formation speed and further improve the reproducibility of the composition in the film.

[0011] In this case, the method for producing the raw material solution may be such that the stirring time is 60 hours or less.

[0012] This stabilizes the composition in the film and improves process reproducibility, and also enables the production of a raw material solution in a short period of time that enables film formation at a high film formation rate, making it possible to develop a highly productive and industrially effective process.

[0013] In this case, the method for producing the raw material solution may use, as the solute, one containing at least one of the metallic elements gallium and aluminum and a halogen.

[0014] This makes it possible to produce a raw material solution capable of forming a film of gallium oxide or a solid solution containing gallium oxide, or aluminum oxide or a solid solution containing aluminum oxide, stably and at a higher film formation rate.

[0015] In this case, the solute may contain at least one of the metal elements gallium and aluminum, and the raw material solution may be produced by adding acetylacetone to the solvent containing the solute and stirring the mixture.

[0016] This makes it possible to produce a raw material solution that enables film formation with improved reproducibility of the composition in the film of gallium oxide or a solid solution containing gallium oxide, or aluminum oxide or a solid solution containing aluminum oxide.

[0017] At this time, the method for producing the raw material solution may be such that the stirring temperature is 95° C. or lower.

[0018] Within such a range, evaporation of the solvent is suppressed and the solute concentration is stabilized, so that the raw material solution can be produced more stably.

[0019] In this case, the method for producing the raw material solution may be such that the stirring time is 1 minute or longer.

[0020] This stabilizes the composition in the film and improves process reproducibility, and also enables the production of a raw material solution in a short period of time that enables film formation at a high film formation rate, making it possible to develop a highly productive and industrially effective process.

[0021] In this case, the film formation method by the mist CVD method includes a mist generating process of generating mist by converting a raw material solution into a mist in a mist-forming section, a carrier gas supply process of supplying a carrier gas for transporting the mist to the mist-forming section, a transport process of transporting the mist from the mist-forming section to the film formation chamber by the carrier gas via a supply pipe connecting the mist-forming section and the film formation chamber, and a film formation process of heat-treating the transported mist to form a film on a substrate, and the raw material solution can be produced by the above-mentioned method for producing a raw material solution.

[0022] This makes it possible to achieve a high film formation speed, and further, when forming a film of a solid solution of two or more elements, it is possible to perform film formation with high reproducibility of the composition in the film.

[0023] The present invention also provides a product lot including two or more crystalline oxide films containing two or more metal elements produced from the same raw material solution lot, wherein the variation between the crystalline oxide films in the composition of the metal element having the maximum metal component composition in the crystalline oxide film is within 5.0%.

[0024] This provides very good reproducibility when used in semiconductor devices, making it industrially useful.

[0025] In this case, the metal element may include at least one of gallium and aluminum.

[0026] This makes it more suitable as a semiconductor device. Effect of the Invention

[0027] As described above, according to the method for producing a raw material solution of the present invention, the solute in the raw material solution is dispersed and homogenized, which greatly improves the film formation speed and enables the production of a raw material solution that enables film formation by the mist CVD method with excellent reproducibility of the composition in the film even when a solid solution of two or more elements is formed. Furthermore, the product lot of the present invention has very good reproducibility when used as a semiconductor device, making it industrially useful. [Brief description of the drawings]

[0028] [Figure 1] FIG. 1 is a schematic diagram showing an example of a film forming apparatus used in the present invention. [Diagram 2] FIG. 2 is a diagram illustrating an example of a mist generating unit used in the present invention. [Diagram 3] FIG. 1 is a diagram showing the results of an experiment conducted to investigate the time required for conversion of aluminum to acetylacetonate. [Figure 4] FIG. 1 is a graph showing the time required for aluminum acetylacetonate production to reach saturation. [Diagram 5] FIG. 13 is a graph showing the relationship between the raw material stirring temperature and the film formation rate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] The present invention will be described in detail below, but the present invention is not limited thereto.

[0030] As described above, there has been a demand for a method for producing a raw material solution for film formation by a mist CVD method, which has an excellent film formation speed and enables film formation with excellent reproducibility of the composition in the film even when a solid solution of two or more elements is formed, and for a product lot of a crystalline oxide film that has very good reproducibility when used in a semiconductor device and is industrially useful.

[0031] The present inventors have conducted intensive research into the above-mentioned problems, and have found that a method for producing a raw material solution for film formation by a mist CVD method, in which a solute containing a metal element is mixed in a solvent and stirred at a temperature of 30° C. or higher, can produce a raw material solution that allows film formation by the mist CVD method with excellent film formation speed and excellent reproducibility of the composition in the film even when a solid solution of two or more elements is formed, and have completed the present invention. The present inventors have also found that a product lot containing two or more crystalline oxide films containing two or more metal elements produced from the same raw material solution lot, in which the variation between the crystalline oxide films in the composition of the metal element with the maximum composition of the metal component in the crystalline oxide film is within 5.0%, when used as a semiconductor device, has very good reproducibility and is industrially useful, and have completed the present invention.

[0032] The following description will be given with reference to the drawings.

[0033] Here, the term "mist" as used in the present invention refers to a general term for fine particles of liquid dispersed in a gas, and includes what are called fog, droplets, and the like.

[0034] (Film forming equipment) First, a film forming apparatus suitable for use in the film forming method according to the present invention will be described. An example of a film forming apparatus 101 is shown in Fig. 1. The film forming apparatus 101 has at least a mist generating section 120 that generates mist by turning a raw material solution 104a into mist, a carrier gas supply section 130 that supplies a carrier gas that transports the mist, a supply pipe 109 that connects the mist generating section 120 to a film forming chamber 107 and transports the mist by the carrier gas, and the film forming chamber 107 that heat-treats the mist supplied from the supply pipe 109 together with the carrier gas to form a film on a substrate 110.

[0035] (Mist generating section) In the mist generating section 120, the raw solution 104a is turned into mist to generate mist. The mist generating means is not particularly limited as long as it can turn the raw solution 104a into mist, and any known mist generating means may be used, but it is preferable to use a mist generating means that uses ultrasonic vibrations, as this allows for more stable mist generation.

[0036] An example of such a mist generating unit 120 is shown in FIG. 2. The mist generating unit 120 may include a mist generating source 104 in which the raw solution 104a is contained, a medium capable of transmitting ultrasonic vibration, for example, a container 105 in which water 105a is contained, and an ultrasonic vibrator 106 attached to the bottom surface of the container 105. In detail, the mist generating source 104 consisting of a container in which the raw solution 104a is contained can be stored in the container 105 in which the water 105a is contained, using a support (not shown). Furthermore, the ultrasonic vibrator 106 may be connected to an oscillator 116. Then, when the oscillator 116 is operated, the ultrasonic vibrator 106 vibrates, and ultrasonic waves are propagated into the mist generating source 104 through the water 105a, so that the raw solution 104a can be misted. Such a mist generating unit can constitute the mist generating unit in the film forming system according to the present invention described later.

[0037] (Carrier gas supply unit) 1, the carrier gas supply unit 130 has a carrier gas source 102a for supplying a carrier gas. In this case, a flow rate control valve 103a for adjusting the flow rate of the carrier gas sent from the carrier gas source 102a may be provided. In addition, a dilution carrier gas source 102b for supplying a dilution carrier gas as required, and a flow rate control valve 103b for adjusting the flow rate of the dilution carrier gas sent from the dilution carrier gas source 102b may also be provided.

[0038] The type of carrier gas is not particularly limited and can be appropriately selected depending on the film to be formed. For example, oxygen, ozone, inert gas such as nitrogen or argon, or reducing gas such as hydrogen gas or forming gas can be used. The type of carrier gas may be one or more. For example, as the second carrier gas, a dilution gas obtained by diluting the same gas as the first carrier gas with another gas (for example, diluted 10 times) may be further used, or air may be used. The flow rate of the carrier gas is not particularly limited. For example, when forming a film on a 30 mm square substrate, the flow rate of the carrier gas is preferably 0.01 to 20 L / min, more preferably 1 to 10 L / min.

[0039] (supply pipe) The film forming apparatus 101 has a supply pipe 109 that connects the mist generating section 120 and the film forming chamber 107. In this case, the mist is transported by a carrier gas from the mist generating source 104 of the mist generating section 120 via the supply pipe 109 and supplied into the film forming chamber 107. The supply pipe 109 may be, for example, a quartz tube, a glass tube, or a resin tube. A mechanism for transporting the mist, including such a supply pipe, can constitute a transport section in the film forming system according to the present invention, which will be described later.

[0040] (Film forming chamber) A substrate 110 is installed in the film formation chamber 107, and a heater 108 for heating the substrate 110 may be provided. The heater 108 may be provided inside the film formation chamber 107 as shown in FIG. 1, or may be provided outside the film formation chamber 107. In addition, the film formation chamber 107 may be provided with an exhaust gas outlet 112 at a position that does not affect the supply of mist to the substrate 110. In addition, the substrate 110 may be placed face-down on the upper surface of the film formation chamber 107, or may be placed face-up on the bottom surface of the film formation chamber 107. A mechanism for performing film formation including such a film formation chamber can constitute a film formation unit in a film formation system according to the present invention described later.

[0041] (substrate) The substrate 110 is not particularly limited as long as it can form a film and can support the film. A known substrate can be used, and it may be an organic compound or an inorganic compound. Examples of the substrate include, but are not limited to, polysulfone, polyethersulfone, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, metals such as iron, aluminum, stainless steel, and gold, silicon, sapphire, quartz, glass, lithium tantalate, potassium tantalate, lithium niobate, and gallium oxide. The thickness of the substrate is not particularly limited, but is preferably 10 to 2000 μm, and more preferably 50 to 800 μm. The size of the substrate 110 is not particularly limited. If the substrate area is 10 mm 2 More preferably, 100 mm 2 The above may be used, or a substrate having a diameter of 2 to 8 inches (50 to 200 mm) or more may be used.

[0042] (Raw material solution) In the present invention, the raw material solution 104a is a solution of a mixture in which a solute containing at least a metal element is mixed in a solvent. As long as the solute can be misted, the material of the solute contained in the solution is not particularly limited, and may be an inorganic material or an organic material. A metal or a metal compound is preferably used, and for example, a solution containing one or more metals selected from gallium, iron, indium, aluminum, vanadium, titanium, chromium, rhodium, nickel, and cobalt may be used. As such a raw material solution, a solution in which a metal is mixed in the form of a complex or salt in a solvent, for example, an organic solvent or water, and dissolved or dispersed therein, can be preferably used. Examples of the salt form include halide salts such as metal chloride salts, metal bromide salts, and metal iodide salts. In addition, a solution in which the above metals are dissolved in a solvent such as hydrohalide acid, hydrochloric acid, and hydroiodic acid can also be used as a salt solution. Examples of the complex form include acetylacetonate complexes, carbonyl complexes, ammine complexes, and hydride complexes. The acetylacetonate complex can also be formed by adding acetylacetone to the above-mentioned salt solution and mixing it. When the raw material solution is prepared in the above manner, the raw material solution contains either halogen or acetylacetone or both. The metal concentration in the raw material solution 104a is not particularly limited and can be 0.005 to 1 mol / L, for example.

[0043] The same effect as that of adding acetylacetone can be obtained by adding an ammonium salt of acetylacetone, which is prepared by mixing acetylacetone with aqueous ammonia in advance. This is preferable because it allows the reaction to proceed more quickly.

[0044] The raw material solution may be mixed with additives such as hydrohalogenated acid and oxidizing agents. Examples of hydrohalogenated acid include hydrobromic acid, hydrochloric acid, and hydroiodic acid, with hydrobromic acid and hydroiodic acid being preferred. Examples of oxidizing agents include peroxides such as hydrogen peroxide (H2O2), sodium peroxide (Na2O2), barium peroxide (BaO2), and benzoyl peroxide (C6H5CO)2O2, hypochlorous acid (HClO), perchloric acid, nitric acid, ozone water, and organic peroxides such as peracetic acid and nitrobenzene.

[0045] The raw material solution may contain a dopant. The dopant is not particularly limited. For example, n-type dopants such as tin, germanium, silicon, titanium, zirconium, vanadium, or niobium, or p-type dopants such as copper, silver, cobalt, iridium, rhodium, magnesium, or nickel may be used.

[0046] (Method of producing raw material solution) Next, the method for producing the raw solution according to the present invention will be described. In the method for producing the raw solution according to the present invention, the temperature at which the solute containing the metal element is mixed with the solvent and stirred is set to 30° C. or higher. This makes it possible to produce a raw solution capable of increasing the film formation rate when forming a film by the mist CVD method. In addition, even when forming a solid solution of two or more elements, it is possible to produce a raw solution capable of improving the reproducibility of the composition in the film. If the stirring temperature is set to 35° C. or higher, it is possible to produce a raw solution that can more stably improve the film formation rate and the reproducibility of the composition in the film, which is preferable. The upper limit of the temperature during stirring is preferably 95° C. or lower. This is because such a stirring temperature suppresses the evaporation of the solvent and stabilizes the solute concentration. The stirring time is preferably 60 hours or less, and more preferably 1 minute or more. This makes it possible to produce a raw solution that stabilizes the composition in the film and improves the process reproducibility, and enables film formation at a high film formation rate, so that it is possible to construct a process that is very effective industrially. In addition, it is possible to suppress a decrease in productivity. A mechanism for producing such a raw solution can constitute a raw solution producing section in a film formation system according to the present invention described later.

[0047] The stirring method and means are not particularly limited. A stirrer with a heating mechanism can be suitably used, but industrially, it can be realized by using a container equipped with a heating and heat-retaining mechanism and a stirrer. In addition, stirring may be performed by rotating a propeller or blades installed in the container to perform stirring, or by blowing in a gas (inert gas, high-pressure steam, etc.) that does not alter the raw material solution. In addition, stirring can be performed by externally circulating the solution with a pump and spraying it into the container as a jet flow to create a circulating flow in the tank. Depending on the amount of raw material solution and the stirring time, an operator may perform stirring using a stirring rod or the like. In addition, it is also possible to use the stirring methods and means exemplified above in combination. Such a stirring means can constitute the stirring means in the film-forming system according to the present invention described below.

[0048] Figure 3 shows the formation of aluminum acetylacetonate when acetylacetone is mixed with an aqueous aluminum chloride solution and stirred at various temperatures, as shown at a wavenumber of 1540 cm. -1 The results are from an experiment in which the change in the amount of infrared light absorbed near the liquid temperature was evaluated. At a mixing temperature of 50°C, aluminum acetylacetonate was produced and saturated in a few minutes, whereas at 23°C, saturation was reached in about 30 hours. Figure 4 shows the time required to reach saturation, plotted against the mixing temperature, taken from Figure 3. The higher the liquid temperature, the more rapidly the required time decreases, and it can be seen that if the mixing temperature is 30°C or higher, the reaction is sufficiently stable and completes within approximately 15 hours. In this case, considering productivity and process stability, it is best to keep the mixing time to 60 hours or less. By using the raw material solution after the reaction has completed in the mist CVD method, stable film formation with excellent reproducibility can be achieved.

[0049] Furthermore, when the stirring temperature is below 30°C, the amount of mist generated is reduced due to the solute flocculating. By increasing the stirring temperature to 30°C or higher, the dispersibility of the solute is improved. As a result, the amount of mist generated increases, which is thought to improve the film formation speed.

[0050] In particular, it is preferable to use a solute containing at least one of the metal elements gallium or aluminum and a halogen, which makes it possible to produce a raw material solution capable of forming a film of gallium oxide or a solid solution containing gallium oxide, or aluminum oxide or a solid solution containing aluminum oxide, stably and at a higher film formation rate.

[0051] It is also preferable to use a solute containing at least one of the metal elements gallium and aluminum, and further to add acetylacetone to the solvent containing the solute and stir it. This makes it possible to produce a raw material solution capable of forming a film with improved reproducibility of the composition in the film, particularly, gallium oxide or a solid solution containing gallium oxide, or aluminum oxide or a solid solution containing aluminum oxide.

[0052] (Film forming method) Next, an example of a film forming method according to the present invention will be described below with reference to Fig. 1. A raw material solution 104a produced by the above-mentioned method for producing a raw material solution is contained in a mist generating source 104, a substrate 110 is placed in a film forming chamber 107, and a heater 108 is operated. Next, flow rate control valves 103a and 103b are opened to supply carrier gas from carrier gas sources 102a and 102b into the film forming chamber 107, and the atmosphere in the film forming chamber 107 is sufficiently replaced with the carrier gas, and then the flow rates of the carrier gas and the dilution carrier gas are adjusted, respectively.

[0053] Next, in the mist generating step, the ultrasonic vibrator 106 is vibrated and the vibration is propagated to the raw material solution 104a through the water 105a, thereby turning the raw material solution 104a into mist and generating the mist.

[0054] Next, in the carrier gas supplying step, a carrier gas for transporting the mist is supplied to the mist generating section 120.

[0055] Next, in a transport step, the mist is transported from the mist-producing section 120 to the film-forming chamber 107 by a carrier gas through the supply pipe 109 that connects the mist-producing section 120 and the film-forming chamber 107.

[0056] Next, in the film formation process, the mist transported to the film formation chamber 107 is heated to cause a thermal reaction, and a film is formed on a part or the whole surface of the substrate 110. The heat treatment is not particularly limited as long as the mist reacts due to heating. The reaction conditions can be appropriately set according to the raw material and the film to be formed. For example, the heating temperature can be in the range of 120 to 600°C, preferably in the range of 200°C to 600°C, and more preferably in the range of 300°C to 550°C.

[0057] The heat treatment for film formation may be performed under any of the following atmospheres: vacuum, non-oxygen atmosphere, reducing gas atmosphere, air atmosphere, and oxygen atmosphere, and may be appropriately set according to the film to be formed. The reaction pressure may be under any of atmospheric pressure, pressurized pressure, and reduced pressure, but film formation under atmospheric pressure is preferred because the device configuration can be simplified.

[0058] (Buffer layer) In forming the film, a buffer layer may be provided between the substrate and the film. As the material of the buffer layer, Al2O3, Ga2O3, Cr2O3, Fe2O3, In2O3, Rh2O3, V2O3, Ti2O3, Ir2O3, etc. are preferably used. The method of forming the buffer layer is not particularly limited, and the film can be formed by a known method such as a sputtering method or a vapor deposition method, but when using the mist CVD method as described above, the buffer layer can be formed simply by appropriately changing the raw material solution. Specifically, one or more metals selected from aluminum, gallium, chromium, iron, indium, rhodium, vanadium, titanium, and iridium are dissolved or dispersed in water in the form of a complex or salt, and the raw material aqueous solution can be preferably used. Examples of the form of the complex include an acetylacetonate complex, a carbonyl complex, an ammine complex, and a hydride complex. Examples of the form of the salt include a metal chloride salt, a metal bromide salt, and a metal iodide salt. Moreover, the above metals may be dissolved in hydrobromic acid, hydrochloric acid, hydroiodic acid, or the like to be used as the aqueous salt solution. In this case, the solute concentration is preferably 0.005 to 1 mol / L, and the stirring temperature during dissolution is 30°C or higher. The buffer layer can be formed by keeping other conditions the same as above. After the buffer layer is formed to a predetermined thickness, the film is formed by the film forming method according to the present invention. The thickness of the buffer layer is preferably 0.1 μm to 2 μm.

[0059] (Heat treatment after film formation) The film obtained by the film forming method according to the present invention may be heat-treated at, for example, 200 to 600°C. This removes unreacted species in the film, and a higher quality film can be obtained. The heat treatment may be performed in air or an oxygen atmosphere, or in an inert gas atmosphere such as nitrogen or argon. The heat treatment time is appropriately determined, and may be, for example, 5 to 240 minutes.

[0060] When a film is formed on a substrate, a laminate including the substrate and the film is obtained, but it is also possible to remove the substrate from this laminate using a known method to obtain a free-standing film.

[0061] The composition of the above metal components can be determined by known methods such as atomic emission spectrometry, mass spectrometry, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and energy dispersive X-ray fluorescence spectrometry.

[0062] The variation in the composition of the metal components can be evaluated by the following method. That is, for each film obtained by performing film formation two or more times under the same conditions, the composition of the metal components is determined by a known method, and the maximum and minimum values ​​are used for the composition of the metal component to be evaluated for variation, and the value obtained by (maximum value - minimum value) ÷ (maximum value + minimum value) × 100 (%) is regarded as the variation. Here, "the same conditions" refers to the set values ​​of things that can be actively changed, such as gas flow rate and film formation temperature, and if these are the same, they are included in the "same conditions" even if uncontrollable things such as outside temperature and weather change. Substrates and raw materials can be considered to be "the same conditions" if they are from the same production lot.

[0063] By using the above-mentioned film forming method, a product lot containing a plurality of crystalline oxide films and having small variation in the metal elements contained in the crystalline oxide films can be manufactured. Specifically, the product lot contains two or more crystalline oxide films obtained using a raw material solution lot obtained by the raw material solution manufacturing method according to the present invention. More specifically, the product lot contains two or more crystalline oxide films containing two or more metal elements manufactured from the same raw material solution lot, and the variation between the crystalline oxide films in the composition of the metal element having the maximum composition of the metal component in the crystalline oxide film is within 5.0%. The metal element preferably contains at least one of gallium and aluminum.

[0064] Such a product lot of the crystalline oxide film can be used, for example, as a semiconductor device. It can also be used as a buffer layer when forming a semiconductor film. When used for such purposes, the reproducibility is very good and it is industrially useful.

[0065] The thickness of the crystalline oxide film according to the present invention is not particularly limited, and may be, for example, 0.05 to 100 μm, preferably 0.1 to 50 μm, and more preferably 0.5 to 20 μm.

[0066] The size (area) of the crystalline oxide film that can be produced is not particularly limited, and depends on the size of the film-forming surface of the substrate. 2 More preferably, 100 mm 2 The above crystalline oxide film can be obtained.

[0067] (Film forming system) A film forming system according to the present invention will be described. The film forming system according to the present invention is a film forming system including a raw solution producing section for producing the above-mentioned raw solution, and a film forming device. That is, the film forming system for a crystalline oxide film according to the present invention is a film forming system including a raw solution producing section for producing a raw solution containing a solute containing a metal element and a solvent, a mist producing section for atomizing or dropletizing the produced raw solution to generate a mist, a transport section for transporting the mist to a film forming section by a carrier gas, and a film forming section for supplying the mist from the nozzle onto a substrate and performing heat treatment on the substrate to form a film. The raw solution producing section includes a stirring means for stirring at a temperature of 30° C. or higher when the solute containing a metal element is mixed with the solvent and stirred. In the film forming system according to the present invention, the raw solution producing section may be controlled by a control section to produce a raw solution by stirring at a temperature of 30° C. or higher when the solute containing a metal element is mixed with the solvent and stirred. Similarly, the film forming apparatus may be configured to form a crystalline oxide film by controlling each unit of the film forming apparatus, such as a mist generating unit, a transport unit, and a film forming unit, by the control unit. With such a control unit, the film forming system can be configured to perform the processes described in the above-mentioned method for producing a raw material solution and the film forming method.

[0068] The stirring means may be one that sets the stirring temperature to 35° C. or more and 95° C. or less. The stirring means may also be one that sets the stirring time to 60 hours or less. Furthermore, the stirring time may be one minute or more.

[0069] The raw material solution produced in the raw material solution producing section may contain at least one metal element of gallium or aluminum and a halogen as a solute. The raw material solution may contain at least one metal element of gallium or aluminum as a solute, and the stirring means may add acetylacetone to a solvent mixed with the solute and stir the mixture. EXAMPLES

[0070] The present invention will be specifically described below with reference to examples, but the present invention is not limited thereto.

[0071] [Example 1] The film forming apparatus 101 used in this embodiment will be described with reference to Fig. 1. The film forming apparatus 101 includes a carrier gas source 102a for supplying a carrier gas, a flow rate control valve 103a for controlling the flow rate of the carrier gas sent from the carrier gas source 102a, a dilution carrier gas source 102b for supplying a dilution carrier gas, a flow rate control valve 103b for controlling the flow rate of the dilution carrier gas sent from the dilution carrier gas source 102b, a mist generating source 104 containing a raw material solution 104a, a container 105 containing water 105a, an ultrasonic vibrator 106 attached to the bottom surface of the container 105, a film forming chamber 107 equipped with a heater 108, and a quartz supply pipe 109 connecting the mist generating source 104 to the film forming chamber 107.

[0072] (Raw material solution) The raw material solution was prepared as follows: Ultrapure water was used as the solvent and gallium bromide was used as the solute, which were mixed and stirred for 10 minutes while being heated with a heater to maintain the liquid temperature at 52° C. The gallium concentration was set to 0.1 mol / L, and this was used as raw material solution 104a.

[0073] (substrate) A square c-plane sapphire substrate cut to 3 cm on a side was placed as substrate 110 in film formation chamber 107, and heater 108 was operated to raise the temperature to 500°C.

[0074] (film formation) The raw material solution 104a produced as described above was placed in the mist generating source 104. Next, the flow rate control valves 103a and 103b were opened to supply carrier gas from the carrier gas sources 102a and 102b into the film forming chamber 107, and the atmosphere in the film forming chamber 107 was sufficiently replaced with the carrier gas, after which the flow rate of the carrier gas was adjusted to 2 L / min and the flow rate of the dilution carrier gas was adjusted to 6 L / min. Nitrogen was used as the carrier gas.

[0075] Next, the ultrasonic vibrator 106 was vibrated at 2.4 MHz, and the vibration was propagated to the raw material solution 104a through the water 105a, thereby misting the raw material solution 104a to generate mist. This mist was introduced into the film formation chamber 107 through the supply pipe 109 by the carrier gas. Then, the mist was thermally reacted in the film formation chamber 107 under atmospheric pressure and at 500° C. to form a thin film of gallium oxide on the substrate 110. The film formation time was 30 minutes.

[0076] (evaluation) It was confirmed by X-ray diffraction that the thin film formed on the substrate 110 was α-Ga2O3. The film thickness was then measured using an optical interference film thickness meter F-50 manufactured by FILMETRICS. The measurement points were nine points on the surface of the substrate 110, and the average film thickness was calculated. As a result, the average film thickness was 1.2 μm, and the film formation speed was 2.4 μm / hour.

[0077] [Examples 2 to 6] The stirring temperatures when the solute was mixed with the solvent and stirred were set to 35, 42, 65, 80, and 90° C., respectively, and other than this, film formation and evaluation were performed in the same manner as in Example 1. As a result, the average film thicknesses were 1.2, 1.2, 1.3, 1.2, and 1.2 μm, respectively, and the film formation rates were 2.4, 2.3, 2.5, 2.5, and 2.4 μm / hour, respectively.

[0078] [Comparative Examples 1 to 3] The stirring temperatures were set to 10, 18, and 28° C., respectively, and other than this, film formation and evaluation were performed in the same manner as in Example 1. As a result, the average film thicknesses were 0.1, 0.6, and 1.0 μm, respectively, and the film formation rates were 0.3, 1.1, and 2.0 μm / hour, respectively.

[0079] A graph showing the film formation rates of Examples 1 to 6 and Comparative Examples 1 to 3 is shown in Figure 5. It can be seen that when the stirring temperature is 30°C or higher, the film formation rate is roughly constant regardless of the stirring temperature, and is stable and sufficiently high. This is thought to be because the reaction of the solute proceeds more easily, and the concentration of the solute after the reaction is stable. On the other hand, when the stirring temperature is low, aggregates and the like are formed in the solution, and the amount of mist generated is reduced.

[0080] [Example 7] Gallium chloride and aluminum chloride were weighed out to a molar ratio of 3:7 and mixed with ultrapure water. The total concentration of the solute was 0.02 mol / L. In addition, 0.06 mol / L of acetylacetone was mixed with this. The resulting mixture was stirred at 50°C for 10 minutes to prepare a raw material solution. Other than this, film formation was performed in the same manner as in Example 1. By ω-2θ scanning with an X-ray diffractometer, a peak appeared between the α-Ga2O3 peak position and the α-Al2O3 peak position, indicating that a solid solution of Ga2O3 and Al2O3 was obtained. When the same experiment was performed again, the X-ray diffraction peak appeared in the same place as the first time, indicating that the reproducibility of the film composition was good.

[0081] [Example 8] Film formation was repeated five times under the same conditions as in Example 7 to produce a product lot containing five crystalline oxide films. The composition of the (AlGa)2O3 film of the obtained product lot was determined by energy dispersive X-ray fluorescence analysis using a JEOL scanning electron microscope (JSM-IT200). As a result, the Ga composition was 82, 80, 80, 81, and 79%, respectively. The variation in the Ga composition was 1.9%, and the reproducibility was very good.

[0082] [Example 9] In Example 7, except that the molar ratio of gallium chloride and aluminum chloride was 1:9, film formation was repeated five times under the same conditions as in Example 7 to manufacture a product lot. The composition of the (AlGa)2O3 film of the obtained product lot was determined by the same method as in Example 8. As a result, the Ga composition was 54, 53, 49, 49, and 50%, respectively. The variation in the Ga composition was 4.9%, and the reproducibility was very good.

[0083] [Comparative Example 4] In Example 9, film formation was repeated five times under the same conditions as in Example 9, except that the temperature during stirring was set to 28°C, to manufacture a product lot. The composition of the (AlGa)2O3 film of the obtained product lot was determined by the same method as in Example 8. As a result, the Ga composition was 53, 59, 48, 57, and 52%, respectively. The variation in the Ga composition was 10.3%, and the reproducibility was deteriorated.

[0084] As described above, according to the embodiments of the present invention, a raw material solution having an excellent film formation speed can be produced, and further, even when a solid solution of two or more elements is formed, a raw material solution enabling film formation with excellent reproducibility of the film composition can be produced.

[0085] The present invention is not limited to the above-described embodiment. The above-described embodiment is merely an example, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits similar effects is included in the technical scope of the present invention.

Claims

1. A method for producing a raw material solution for forming a film by a mist CVD method, comprising the steps of: A method for producing a raw material solution, comprising mixing a solute containing a metal element with a solvent and stirring the mixture at a temperature of 30° C. or higher.

2. 2. The method for producing a raw material solution according to claim 1, wherein the stirring temperature is 35° C. or higher.

3. 3. The method for producing a raw material solution according to claim 1, wherein the stirring time is 60 hours or less.

4. 4. The method for producing a raw material solution according to claim 1, wherein the solute contains at least one of the metal elements gallium and aluminum and a halogen.

5. As the solute, one containing at least one of the metal elements gallium and aluminum is used, 5. The method for producing a raw material solution according to claim 1, further comprising the step of adding acetylacetone to the solvent in which the solute has been mixed, followed by stirring.

6. 6. The method for producing a raw material solution according to claim 1, wherein the stirring temperature is set to 95° C. or lower.

7. 7. The method for producing a raw material solution according to claim 1, wherein the stirring time is 1 minute or more.

8. A film forming method by a mist CVD method, comprising the steps of: a mist generating step of generating mist by misting the raw material solution in a mist generating section; A carrier gas supplying step of supplying a carrier gas for transporting the mist to the mist generating section; a transport step of transporting the mist from the mist generating unit to the film forming chamber by the carrier gas through a supply pipe connecting the mist generating unit and the film forming chamber; and a film forming process for forming a film on a substrate by heat-treating the transported mist, A film forming method, comprising producing the raw material solution by the method for producing a raw material solution according to claim 1 .

9. A product lot including two or more crystalline oxide films each containing two or more metal elements, the product lot being manufactured from the same raw material solution lot, the variation in the composition of the metal element having the maximum composition of the metal component in the crystalline oxide film is within 5.0% among the crystalline oxide films; The product lot is characterized in that the variation is a value obtained by using the maximum and minimum values ​​of the composition of the metal elements and calculating (maximum value - minimum value) / (maximum value + minimum value) x 100 (%).

10. 10. The product lot according to claim 9, wherein the metal element contains at least one of gallium and aluminum.

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