Method for removing polishing pad and polishing apparatus

Abstract

To provide a method for peeling a polishing pad and a polishing device, capable of easily peeling off a polishing pad from a platen so that a polishing pad can be replaced, even if a polishing pad arranged in a polishing device is not transparent.SOLUTION: There is provided a method for peeling a polishing pad 26 to peel off, from a platen 24, the polishing pad 26 used in a polishing device 1 that polishes a wafer with the polishing pad 26, the polishing device including polishing means 2 in which the platen 24 with the polishing pad 26 bonded thereto is attached to the tip of a spindle 20 and the polishing pad 26 is rotated to polish a wafer held on a holding surface 302 of a chuck table 30. The platen 24 is formed of a transparent member, and the polishing pad 26 is bonded to the platen 24 using an adhesive 25 which cures by adsorbing ultraviolet rays and weakens its adhesive strength. In the method for peeling the polishing pad 26, when the polishing pad 26 is replaced, ultraviolet rays are allowed to pass through the platen 24 and radiate the adhesive 25, thereby weakening the adhesive strength of the adhesive 25 so that the polishing pad 26 is peeled off from the platen 24.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a polishing pad removing method for removing a polishing pad from a platen of a polishing apparatus that polishes a wafer, and to a polishing apparatus. [Background technology]

[0002] For example, as disclosed in the following Patent Document 1, a CMP (Chemical Mechanical Polishing) polishing apparatus that polishes a wafer while supplying a polishing liquid (slurry) has a polishing pad attached to a platen, and by periodically replacing the used polishing pad, it is possible to perform uniform and stable polishing processing on the wafer. Note that, for example, the CMP polishing apparatus shown in Patent Document 1 bonds the platen and the transparent polishing pad with an ultraviolet-curing adhesive. When replacing the polishing pad, ultraviolet light is irradiated onto the adhesive from the transparent polishing pad side to reduce the adhesive strength of the adhesive. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2005-347473 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in CMP polishing equipment and dry polishing equipment, there are cases where a transparent polishing pad cannot be used depending on the processing conditions. Conventionally, when replacing a polishing pad, an operator inserts a squeegee with a sharp tip between the polishing pad and the platen, and then grasps the polishing pad that has peeled off from the platen and peels it off from the platen by hand. In particular, if the polishing pad is not transparent and it is not possible to reduce the adhesive strength of the adhesive by irradiating ultraviolet rays onto the adhesive from the polishing pad side, a strong force is required to peel the polishing pad off from the platen. Also, if the polishing pad is a hard type, a strong force is required to peel it off because the polishing pad does not bend. Therefore, in a polishing apparatus, even if the polishing pad used is not transparent, there is a problem in that it is necessary to make it possible to easily peel the polishing pad from the platen when replacing the polishing pad. [Means for solving the problem]

[0005] In order to solve the above problems, the present invention provides a chuck table that holds a wafer on a holding surface, and a platen to which a polishing pad is attached, which is attached to the tip of a spindle. Through the mount placed on a polishing means for rotating the polishing pad by rotating the spindle, thereby polishing the wafer held on the holding surface; a slurry flow passage that passes through the center of the spindle and the mount, connects one end to a slurry supply source, and supplies a slurry to the polishing pad from the other end; Polishing with 1. An apparatus comprising: The platen is formed of a transparent material, The polishing pad comprises: The platen is attached using an adhesive that hardens and weakens when it absorbs ultraviolet light. Being And, An ultraviolet irradiation lamp is disposed on one end side of the slurry flow path and irradiates the adhesive with ultraviolet light, and the ultraviolet light irradiated from the ultraviolet irradiation lamp passes through the slurry flow path and enters a transparent The adhesive is passed through the platen. Irradiate to polishing Device It is.

[0006] Further, the present invention for solving the above problems is A method for removing the polishing pad used in the above polishing apparatus from the platen, the method comprising: transmitting ultraviolet light that has passed through the slurry flow path through the platen and irradiating the adhesive with the ultraviolet light to weaken the adhesive force of the adhesive, thereby removing the polishing pad from the platen. is 。 Effect of the Invention

[0007] In the method for removing a polishing pad according to the present invention, the platen is made of a transparent material, and the polishing pad is adhered to the platen using an adhesive that hardens and weakens its adhesive strength when it absorbs ultraviolet light. When replacing the polishing pad, even if the polishing pad is not made of a transparent material, ultraviolet light can be passed through the platen to irradiate the adhesive, weakening the adhesive strength of the adhesive. This makes it possible to easily peel the polishing pad from the platen even if the polishing pad is a hard type that does not bend.

[0008] In the polishing apparatus of the present invention, the platen is formed from a transparent material, and the polishing pad is adhered to the platen using an adhesive that hardens and weakens its adhesive strength when it absorbs ultraviolet light. The polishing means is equipped with an ultraviolet irradiation means that irradiates ultraviolet light from the tip of the spindle onto the transparent platen located below, so that the ultraviolet light can be transmitted through the platen and irradiated onto the adhesive, weakening the adhesive strength of the adhesive. This makes it possible to easily peel the polishing pad from the platen even if it is a hard type that does not bend. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view showing an example of a polishing apparatus. [Diagram 2] FIG. 2 is a perspective view showing an example of a polishing means. [Diagram 3] FIG. 2 is an explanatory diagram of the polishing means as viewed from the side. [Figure 4] 13 is an explanatory side view showing a case where a new polishing pad is bonded to a platen. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] 1 is an apparatus for polishing a wafer 90 held by suction on a chuck table 30 by a polishing means 2 while supplying, for example, a slurry, and a column 11 on which the polishing means 2 is disposed is erected in a central back area (-X direction side) on an apparatus base 10 having a Y-axis direction as a longitudinal direction of the polishing apparatus 1. The polishing apparatus 1 may be a polishing apparatus that dry-polishes the wafer 90 without supplying slurry to the wafer 90. Alternatively, the polishing apparatus 1 may be a polishing apparatus that supplies water instead of slurry to the wafer 90 and polishes the wafer 90 with a polishing pad containing an abrasive. The wafer 90 shown in FIG. 1 is, for example, a circular semiconductor wafer made of a silicon base material or the like, but is not limited to this and may be made of gallium arsenide, sapphire, ceramics, resin, gallium nitride, silicon carbide, or the like.

[0011] The chuck table 30, which has a circular outer shape when viewed from above, has an upper surface made of, for example, a porous material as a holding surface 302, and the holding surface 302 is connected to a suction source (not shown), such as an ejector mechanism or a vacuum generator, to transmit the suction force generated by the suction source. The chuck table 30 is surrounded by a cover 39 that guides used slurry to a predetermined drainage location and is rotatable about a rotation axis whose axial direction is the Z-axis direction (vertical direction). The chuck table 30 can be moved back and forth in the Y-axis direction on the device base 10 by horizontal movement means 13 disposed below the cover 39 and a bellows cover 390 that is connected to the cover 39 and expands and contracts in the Y-axis direction.

[0012] The horizontal movement means 13 comprises a ball screw 130 having an axis in the Y-axis direction, a pair of guide rails 131 arranged parallel to the ball screw 130, a motor 132 connected to one end of the ball screw 130 and rotating the ball screw 130, and a movable plate 133 having an internal nut that screws into the ball screw 130 and a bottom that slides against the guide rail 131. As the motor 132 rotates the ball screw 130, the movable plate 133 is guided by the guide rail 131 and moves linearly in the Y-axis direction, thereby allowing the chuck table 30, which is arranged on the movable plate 133 via a table base 35, to move back and forth in the Y-axis direction.

[0013] For example, the polishing apparatus 1 may include three load sensors 27 shown in Fig. 3 that measure the load (pressing load applied to the wafer 90 by the polishing means 2) received by the polishing means 2 when the polishing pad 26 is pressed against the wafer 90 held on the holding surface 302 of the chuck table 30. The three load sensors 27 (only two are shown) are disposed on a holder 28 that is fixed to the lift plate 173 of the polishing feed means 17 shown in Fig. 1 and supports the polishing pad 26 together with the housing 21. In this example, the three load sensors 27 are disposed between the lower end surface of the side plate of the substantially bottomed cylindrical holder 28 and the upper surface of the bottom plate of the holder 28 connected to the housing 21 at intervals of 120 degrees in the circumferential direction of the polishing pad 26, that is, at the vertices of an imaginary equilateral triangle in a horizontal plane, sandwiched from both sides in the Z-axis direction. The load sensor 27 is configured, for example, by a thin force sensor manufactured by Kistler using a piezoelectric element such as lead zirconate titanate (PZT). The sum of the measured values ​​of the three load sensors 27 is equal to the value of the pressing load applied by the polishing means 2 to the wafer 90 side.

[0014] For example, the three load sensors 27 may be arranged between the holder 28 of the polishing means 2 and the housing 21 supported by the holder 28, spaced 120 degrees apart around the periphery of the polishing pad 26, i.e., positioned at the vertices of an equilateral triangle and sandwiched from both sides in the Z-axis direction. Note that the apparatus may also include three load sensors 27 (not shown) for measuring, for example, the load received by the chuck table 30 when the polishing pad 26 is pressed against the wafer 90 held on the holding surface 302 of the chuck table 30. In this case, the three load sensors 27 are sandwiched between the table base 35 supporting the chuck table 30 shown in FIG. 1 and the movable plate 133 on both sides in the Z-axis direction, and are positioned at intervals of 120 degrees in the circumferential direction of the chuck table 30, i.e., at the vertices of an imaginary equilateral triangle in the horizontal plane.

[0015] 1, there is disposed a polishing feed means 17 for polishing and feeding the polishing means 2 in the Z-axis direction (vertical direction) away from or toward the chuck table 30. The polishing feed means 17 includes a ball screw 170 whose axial direction is the Z-axis direction, a pair of guide rails 171 disposed parallel to the ball screw 170, a lifting motor 172 connected to the upper end of the ball screw 170 for rotating the ball screw 170, and a lifting plate 173 whose internal nut is screwed into the ball screw 170 and whose side is in sliding contact with the guide rail 171. As the lifting motor 172 rotates the ball screw 170, the lifting plate 173 is guided by the guide rail 171 to reciprocate in the Z-axis direction, and the polishing means 2 fixed to the lifting plate 173 is polished and fed in the Z-axis direction.

[0016] The polishing means 2, which performs, for example, CMP polishing on a wafer 90 held by suction on the chuck table 30, comprises a spindle 20 whose axial direction is the Z-axis direction, a housing 21 that rotatably supports the spindle 20, a motor 22 that rotates and drives the spindle 20, a circular plate-shaped mount 23 connected to the lower end of the spindle 20, a circular plate-shaped platen 24 that is removably attached to the lower surface of the mount 23, a polishing pad 26 that is adhered to the adhesive surface (lower surface) 240 of the platen 24 with an adhesive 25 (shown only in Figures 2 to 4), and a holder 28 that supports the housing 21 and has its side fixed to the lifting plate 173 of the polishing feed means 17.

[0017] 1, the polishing means 2 may include a rotation stop mechanism 80 that fixes the spindle 20 and the mount 23 so that they do not rotate when, for example, replacing the polishing pad 26. The housing 21 includes an air bearing mechanism that rotatably supports the spindle 20 without contact. The air bearing mechanism forms an air layer made of high-pressure air in a small gap between, for example, the inner surface of the substantially cylindrical housing 21 and the outer surface of the spindle 20, and supports the spindle 20 rotatably without contact and without frictional resistance by the pressure of this air layer.

[0018] For example, an air supply source 82 such as a compressor is connected to the housing 21 via an air supply pipe 81, and an opening / closing valve 83 such as a solenoid valve is provided in the air supply pipe 81. The rotation stopping mechanism 80, for example, controls the supply of electricity to the opening / closing valve 83 to control the opening and closing operation of the opening / closing valve 83, and closes the opening / closing valve 83 when the polishing pad 26 is peeled off from the platen 24, thereby stopping the supply of air into the housing 21 and seating the spindle 20 on a seating surface in the housing 21, so that the spindle 20 and the like will not rotate even if force is applied to the spindle 20, the mount 23, etc. The polishing apparatus 1 does not necessarily have to include the rotation stopping mechanism 80. Instead of the rotation stopping mechanism 80, a clamp chuck or the like may be provided in the polishing means 2 to directly clamp the spindle 20, which is rotatably supported by an air bearing formed in the housing 21, to prevent it from rotating.

[0019] The platen 24 shown in Figures 1 and 2 is made of a predetermined transparent material (e.g., quartz glass, UV-transmitting plastic, etc.) that is rigid and does not easily absorb UV light but easily transmits it, and is formed into a circular plate. The platen 24 has a substantially flat bonding surface 240 for bonding the polishing pad 26, and an upper surface 241 that is attached to the tip of the spindle 20 opposite the bonding surface 240. The platen 24 has, for example, approximately the same diameter as the mount 23, and a through-hole (not shown) that serves as a flow path for slurry (abrasive liquid containing, for example, SiO2 or Al2O3 as loose abrasive grains) is formed in the center thereof, penetrating in the thickness direction. For example, the platen 24 is removably attached to the mount 23 using a fixing bolt (not shown) or the like, with the through-hole of the mount 23, through which the slurry passes, aligned with the through-hole of the platen 24.

[0020] The polishing pad 26, which is a circular plate in plan view, is made of, for example, nonwoven fabric such as felt, and has a nozzle (not shown) formed in the center through which the slurry is passed and which corresponds to the through-hole of the platen 24. The diameter of the polishing pad 26 is, for example, approximately the same as the diameter of the platen 24, and is larger than the diameter of the wafer 90. The upper and lower surfaces of the polishing pad 26 are flat. For example, the lower surface of the polishing pad 26 may have a lattice-shaped groove formed thereon to spread the slurry over the entire lower surface. The polishing pad 26 is not limited to the nonwoven fabric type, and may be, for example, a porous type made of polyurethane foam, or a suede type made of thermoplastic resin.

[0021] The adhesive 25 that bonds the polishing pad 26 and platen 24 shown in Figures 2 and 3 is mainly composed of, for example, polyvinyl chloride, which hardens and weakens its adhesive strength when exposed to ultraviolet light, but is not limited to this and may be an acrylic adhesive polymer, etc.

[0022] 1, a slurry flow passage 205 extending in the Z-axis direction is formed so as to coincide with the axis of the spindle 20, and a slurry supply source 290 constituted by a pump or the like is connected to the slurry flow passage 205 via a joint and a resin tube 291 or the like. During polishing, the slurry supplied from the slurry supply source 290 passes through the slurry flow passage 205, the through hole of the mount 23, the through hole of the platen 24, and the ejection port of the polishing pad 26, and reaches the contact portion between the polishing surface of the polishing pad 26 and the wafer 90. Thus, in this embodiment, the slurry supply source 290, the slurry flow passage 205 inside the spindle 20, and the flow passage from the mount 23 to the polishing pad 26 form a slurry supply unit 29 that supplies slurry to the wafer 90 held on the holding surface 302 of the chuck table 30. The slurry supplying section 29 may be configured to inject the slurry onto the polishing pad 26 from a slurry injection nozzle or the like disposed outside the polishing means 2 .

[0023] 1 and 3, the polishing means 2 includes an ultraviolet ray irradiation means 5 that irradiates ultraviolet rays downward from the tip (lower end) of the spindle 20. The ultraviolet ray irradiation means 5 includes, for example, a slurry flow path 205 inside the spindle 20, a through hole in the mount 23, and an ultraviolet ray irradiation lamp 50 such as an LED, a mercury lamp, or a metal halide lamp that is arranged at the rear end (upper end) of the spindle 20.

[0024] 1, the operation of each component of the polishing apparatus 1 when performing CMP polishing on a wafer 90 held on the chuck table 30 will be described below. First, the wafer 90 is suction-held on the chuck table 30 with their centers substantially aligned.

[0025] 1 is moved in the Y-axis direction by the horizontal moving means 13 to below the polishing means 2, and the polishing pad 26 is aligned with the wafer 90. In this embodiment, the chuck table 30 is positioned at a predetermined position so that the polishing pad 26 always comes into contact with the entire upper surface of the wafer 90, i.e., so that the polishing pad 26 covers the entire upper surface of the wafer 90, during polishing processing.

[0026] Next, as the spindle 20 is rotated by the motor 22, the polishing pad 26 rotates at a predetermined rotation speed. Also, the polishing means 2 is lowered in the -Z direction by the polishing feed means 17, and the polishing surface of the polishing pad 26 comes into contact with the upper surface of the wafer 90, thereby performing the polishing process. Furthermore, during the polishing process, as the chuck table 30 rotates, the wafer 90 held on the holding surface 302 also rotates, and the polishing pad 26 polishes the entire upper surface of the wafer 90. Also, during the polishing process, slurry is supplied from the slurry supply unit 29 through the inside of the polishing means 2 to the contact area between the polishing surface of the polishing pad 26 and the upper surface of the wafer 90.

[0027] After the upper surface of the wafer 90 has been polished for a predetermined time, the polishing means 2 is raised in the +Z direction by the polishing feed means 17 to separate the polishing pad 26 from the wafer 90. The wafer 90 may be moved back and forth in the Y-axis direction relative to the polishing means 2 during polishing. This may result in stripes being formed on the upper surface of the wafer 90 during polishing, which may reduce the flexural strength of the wafer 90. Therefore, for example, the polishing pad 26 may be made to slide relatively in the Y-axis direction on the upper surface of the wafer 90 during polishing to prevent the flexural strength of the wafer 90 from decreasing.

[0028] When multiple wafers 90 are polished using the polishing pad 26 in succession as described above, the polishing surface of the polishing pad 26 wears out, and the worker replaces the used polishing pad 26 with a new polishing pad 26 when an appropriate number of wafers 90 have been polished or when the polishing apparatus 1 is idling.

[0029] Specifically, after the polishing apparatus 1 is stopped, an operator first releases the mount 23 and the platen 24 shown in FIG. 2 from the fastening by a fixing bolt (not shown), and then the platen 24 and the polishing pad 26 bonded to the platen 24 by the adhesive 25 are carried out, for example, to the outside of the polishing apparatus 1. Then, using an ultraviolet ray irradiation lamp such as a mercury lamp, an LED, or a metal halide lamp, ultraviolet rays of a predetermined wavelength (for example, 250 nm to 450 nm) are irradiated from the platen 24 side formed of a transparent member toward the adhesive 25, so that the adhesive 25 absorbs the energy of the ultraviolet rays and hardens, thereby weakening the adhesive force. This allows an operator to easily peel off the polishing pad 26 from the platen 24 with or without using a squeegee, even if the polishing pad 26 is, for example, a hard type that does not bend.

[0030] Thereafter, the platen 24 from which the polishing pad 26 has been peeled off is wiped off with a suitable cleaning agent such as ethanol to thoroughly remove dirt and moisture such as the slurry and the remaining adhesive 25, so that there will be no insufficient adhesive strength when the polishing pad 26 is reattached using the adhesive 25. The polishing pad 26 is then attached again to the adhesive surface 240 using the adhesive 25 with their centers approximately aligned. The adhesive 25 may be liquid and applied to the adhesive surface 240 of the platen 24 or the upper surface of the polishing pad 26, or a double-sided adhesive sheet in which the adhesive 25 has been formed in a circular sheet shape may be attached to the adhesive surface 240 of the platen 24 or the upper surface of the polishing pad 26. Then, the operator again bolts the mount 23 to the platen 24 to which the new polishing pad 26 has been attached.

[0031] As described above, in the polishing pad peeling method of the present invention, the platen 24 is made of a transparent material, and the polishing pad 26 is adhered to the platen 24 using the adhesive 25 that hardens and weakens its adhesive strength when it absorbs ultraviolet light. When replacing the polishing pad 26, even if the polishing pad 26 is not made of a transparent material, ultraviolet light can be passed through the platen 24 to irradiate the adhesive 25, thereby weakening the adhesive strength of the adhesive 25. Even if the polishing pad 26 is not made of a transparent material and is a hard type that does not bend, the used polishing pad 26 can be easily peeled off from the platen 24.

[0032] 1 according to the present invention, a used polishing pad 26 can be peeled off from a platen 24 and a new polishing pad 26 can be attached to the platen 24 within the polishing apparatus 1. First, in peeling off a used polishing pad 26 from the platen 24, for example, the rotation of the spindle 20 by the motor 22 is stopped, and further, the open / close valve 83 of the rotation stop mechanism 80 shown in FIG. 1 is closed to stop the supply of air into the housing 21, so that the spindle 20 and the mount 23 are not rotated even if a small force is applied by an operator to peel off the polishing pad 26. Note that the polishing pad 26 may be peeled off without suppressing the rotation of the spindle 20 by the rotation stop mechanism 80.

[0033] The ultraviolet irradiation lamp 50 of the ultraviolet irradiation means 5 shown in FIG. 1 and FIG. 3 emits ultraviolet light of a predetermined wavelength (for example, 250 nm to 450 nm), passes the ultraviolet light through the slurry flow path 205 inside the spindle 20, irradiates the ultraviolet light downward from the tip (lower end) of the spindle 20, passes through the through hole of the mount 23, and transmits the ultraviolet light through the platen 24 formed of a transparent member to irradiate the adhesive 25. The adhesive 25 absorbs the energy of the ultraviolet light, hardens, and weakens its adhesive force, so that even if the polishing pad 26 is, for example, a hard type that does not bend, an operator can easily peel off the polishing pad 26 from the platen 24 with or without using a squeegee. The used polishing pad 26 is peeled off from the platen 24 by, for example, an operator, and then the adhesive surface 240 of the platen 24 and the like are cleaned.

[0034] Next, a new polishing pad 26 is bonded to the platen 24. For example, as shown in Fig. 4, an operator places the new polishing pad 26 on the holding surface 302 of the chuck table 30 with the adhesive surface facing upward. The adhesive 25 is applied in advance to a uniform thickness over substantially the entire upper adhesive surface of the new polishing pad 26. In this embodiment, the polishing pad 26 is not placed directly on the holding surface 302, but is placed via a polishing pad placement jig 38.

[0035] The polishing pad mounting jig 38 includes, for example, a plate 380 having a circular outer shape and a diameter larger than that of the polishing pad 26. An outer peripheral contact portion 382 is formed on the outer peripheral region of the lower surface of the plate 380, and hangs down in the -Z direction. The cylindrical outer peripheral contact portion 382 has, for example, a stepped surface with a single step on its lower surface, and engages with the outer peripheral portion of the frame supporting the porous member of the chuck table 30 so as not to damage the holding surface 302. The polishing pad 26 is placed on the upper surface of the plate 380 with its center approximately coinciding with the center of the holding surface 302 of the chuck table 30. For example, on the outer periphery of the plate 380, three or more regulating pins may be arranged at equal intervals in the circumferential direction to keep the polishing pad 26 centered on the upper surface of the plate 380, i.e., to regulate deviation in the horizontal direction.

[0036] In addition, without using the polishing pad placing jig 38, a new polishing pad 26 may be placed directly on the holding surface 302 of the chuck table 30 with the adhesive surface facing upward, and the polishing pad 26 may be held by suction on the holding surface 302.

[0037] The chuck table 30 shown in Figure 4 is moved in the Y-axis direction by the horizontal movement means 13, and the chuck table 30 is positioned directly below the polishing means 2 so that the center of the platen 24 (the axis of the spindle 20) and the center of the polishing pad 26 placed on the plate 380 approximately coincide with each other.

[0038] The polishing means 2 is lowered in the -Z direction by the polishing feed means 17, and the adhesive surface 240 of the platen 24 is adhered to the adhesive 25. At this time, the three load sensors 27 shown in FIG. 4 generate, for example, a positive voltage when subjected to a load. This voltage signal indicates the load, and a control unit (not shown) of the polishing apparatus 1 can recognize the load (the total value of the detection values ​​of the three load sensors 27) applied from the platen 24 to the polishing pad 26. The control unit stores in advance an appropriate pressing load for adhering the polishing pad 26 to the platen 24, and the polishing feed means 17 may be controlled so that the load value measured by the load sensor 27 matches the appropriate pressing load value.

[0039] As described above, in the polishing apparatus 1 of the present invention, the platen 24 is formed from a transparent material, and the polishing pad 26 is adhered to the platen 24 using an adhesive 25 that hardens and weakens its adhesive strength when it absorbs ultraviolet light. The polishing means 2 is equipped with an ultraviolet light irradiation means 5 that transmits ultraviolet light from the tip of the spindle 20 through the transparent platen 24 and irradiates the adhesive 25. By transmitting ultraviolet light through the platen 24 and irradiating it onto the adhesive 25, the adhesive strength of the adhesive 25 can be weakened, and the polishing pad 26 can be easily peeled off from the platen 24 even if the polishing pad 26 is a hard type that does not bend.

[0040] The method of peeling off the polishing pad from the platen according to the present invention is not limited to the above embodiment, and the configurations of the polishing apparatus 1 according to the present invention shown in the attached drawings are not limited to these and can be modified as appropriate within the scope in which the effects of the present invention can be achieved. [Explanation of symbols]

[0041] 90: Wafer 1: Polishing device 10: Device base 30: Chuck table 302: Holding surface 39: Cover 390: Bellows cover 13: Horizontal movement means 130: Ball screw 132: Motor 133: Movable plate 35: Table base 17: Polishing feed means 170: Ball screw 172: Lifting motor 2: polishing means 20: spindle 21: housing 22: motor 23: mount 24: Platen 240: Adhesive surface 25: Adhesive 26: Polishing pad 27: Load sensor 29: Slurry supply section 205: Slurry flow path 290: Slurry supply source 291: Resin tube 80: Rotation stop mechanism 81: Air supply pipe 82: Air supply source 83: Opening and closing valve 5: Ultraviolet irradiation means 50: Ultraviolet irradiation lamp 38: Polishing pad mounting jig 380: Plate 382: Outer periphery contact part

Claims

1. A polishing apparatus comprising: a chuck table for holding a wafer on a holding surface; a polishing means for rotating the polishing pad by attaching a platen having a polishing pad attached thereto via a mount disposed at the tip of a spindle and rotating the spindle, thereby polishing the wafer held on the holding surface; and a slurry flow path that passes through the center of the spindle and the mount, connects one end to a slurry supply source, and supplies slurry to the polishing pad from the other end, The platen is formed of a transparent material, The polishing pad is attached to the platen using an adhesive that hardens and weakens when it absorbs ultraviolet light; an ultraviolet irradiation lamp that is disposed on one end side of the slurry flow path and irradiates the adhesive with ultraviolet light; The polishing apparatus has an ultraviolet ray irradiated from the ultraviolet ray irradiation lamp, which passes through the slurry flow path, the transparent platen, and irradiates the adhesive.

2. A method for removing a polishing pad used in the polishing apparatus according to claim 1 from a platen, comprising: The method for removing a polishing pad comprises transmitting ultraviolet light that has passed through the slurry flow path through the platen and irradiating the adhesive with the ultraviolet light, thereby weakening the adhesive strength of the adhesive and removing the polishing pad from the platen.

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