Die bonding device, peeling tool, and method for manufacturing semiconductor device

Abstract

To provide a die bonding device capable of reducing cracking and chipping of a die during picking up.SOLUTION: A die bonding device includes a peeling unit for peeling a die D attached to a dicing tape 16 formed of a temperature-sensitive adhesive sheet. In the peeling unit, a peeling jig 101 includes a block 102 that comes into contact with the part to which the die to be peeled is attached in the dicing tape, a dome plate 109 that comes into contact with the part to which the die to be peeled is not attached in the dicing tape, and a heat treatment device 103 for setting the block to a temperature at which the dicing tape peels from the die to be peeled, in a cylindrical dome 108.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present disclosure relates to a die bonding apparatus, and is applicable, for example, to a die bonding apparatus that picks up a die attached to a heated release sheet. [Background technology]

[0002] In a die bonder that mounts a semiconductor chip (hereinafter referred to as a die) on the surface of, for example, a wiring board or a lead frame (hereinafter collectively referred to as a substrate), the following operations (tasks) are repeatedly performed: transporting the die onto the substrate using a suction nozzle such as a collet, applying a pressing force, and heating the bonding material to perform bonding.

[0003] Among the die bonding processes using die bonding devices such as die bonders, there is a peeling process in which divided dies are peeled off from a semiconductor wafer (hereinafter referred to as a wafer) to which an adhesive dicing tape has been attached. In the peeling process, the dies are pushed up from the back surface of the dicing tape by a push-up pin or block, peeled off one by one from the dicing tape held in the die supply unit, and transported onto the substrate using a suction nozzle such as a collet.

[0004] In recent years, in order to promote high-density packaging of semiconductor devices, stacked packages in which multiple dies are mounted three-dimensionally on a wiring board have been put into practical use. When assembling such stacked packages, dies that have been thinned to a thickness of about several tens of μm are used. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2012-4393 A Summary of the Invention [Problem to be solved by the invention]

[0006] However, when a die becomes thin, the rigidity of the die becomes extremely low compared to the adhesive strength of the dicing tape, and therefore, in the process of assembling a package using a thin die, the die is prone to cracking or chipping when it is peeled off the adhesive tape and picked up after being separated by dicing.

[0007] An object of the present disclosure is to provide a die bonding apparatus capable of reducing cracking or chipping of a die during pick-up. [Means for solving the problem]

[0008] A brief summary of representative aspects of this disclosure is as follows. That is, the die bonding apparatus includes a peeling unit that peels off a die attached to a dicing tape formed of a heat-peelable adhesive sheet. The peeling unit includes, within a cylindrical dome, a block that contacts a portion of the dicing tape where the die to be peeled is attached, a dome plate that contacts a portion of the dicing tape where the die to be peeled is not attached, a heating device that heats the block to a temperature at which the dicing tape peels off the die to be peeled, a temperature sensor that measures the temperature of the heating device, and a cooling unit that cools the dome plate. Effect of the Invention

[0009] According to the present disclosure, it is possible to reduce cracking and chipping of the die. [Brief description of the drawings]

[0010] [Figure 1] FIG. 2 is a top view showing an outline of a die bonder in the embodiment. [Diagram 2] 2 is a diagram for explaining the operation of a pickup head and a bonding head as viewed in the direction of arrow A in FIG. 1. [Diagram 3] FIG. 2 is a schematic cross-sectional view showing a main part of the die supply section of FIG. [Figure 4] FIG. 4 is a top view illustrating the peeling jig in FIG. [Diagram 5] 5 is a cross-sectional view of the peeling jig shown in FIG. 4 . [Figure 6] FIG. 4 is a timing diagram showing a peeling sequence. [Figure 7] 4 is a flowchart illustrating a method for manufacturing a semiconductor device using the die bonder of FIG. [Figure 8] FIG. 11 is a cross-sectional view of a peeling jig in a first modified example. [Figure 9] FIG. 11 is a cross-sectional view of a peeling jig in a second modified example. [Figure 10] FIG. 13 is a cross-sectional view of a peeling jig in a third modified example. [Figure 11] 13A to 13C are diagrams illustrating a peeling jig in fourth to seventh modified examples. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, the embodiments will be described with reference to the drawings. However, in the following description, the same components are given the same reference numerals and the repeated description may be omitted. Note that, in order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present invention.

[0012] Fig. 1 is a top view showing an outline of a die bonder in an embodiment of the present invention, Fig. 2 is a diagram for explaining the operation of a pickup head and a bonding head when viewed from the direction of an arrow A in Fig. 1.

[0013] The die bonder 10 broadly comprises a die supply unit 1 which supplies a die D to be mounted on a substrate S, a pickup unit 2, an intermediate stage unit 3, a bonding unit 4, a transport unit 5, a substrate supply unit 6, a substrate unloading unit 7, and a control unit 8 which monitors and controls the operation of each unit. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply unit 1 is disposed on the front side of the die bonder 10, and the bonding unit 4 is disposed on the back side. Here, one or more product areas (hereinafter referred to as package areas P) which will become one final package are printed on the substrate S.

[0014] First, the die supply unit 1 supplies a die D to be mounted in the package area P of the substrate S. The die supply unit 1 has a wafer holder 12 that holds a wafer 11, and a peeling unit 13, shown by a dotted line, that peels the die D from the wafer 11. The die supply unit 1 moves in the X and Y axis directions by a driving means (not shown), and moves the die D to be picked up to the position of the peeling unit 13.

[0015] The pickup unit 2 has a pickup head 21 that picks up the die D, a pickup head Y drive unit 23 that moves the pickup head 21 in the Y-axis direction, and various drive units (not shown) that raise and lower, rotate, and move the collet 22 in the X-axis direction. The pickup head 21 has a collet 22 (see also FIG. 2) that suctions and holds the peeled die D at its tip, picks up the die D from the die supply unit 1, and places it on the intermediate stage 31. The pickup head 21 has various drive units (not shown) that raise and lower, rotate, and move the collet 22 in the X-axis direction.

[0016] The intermediate stage unit 3 has an intermediate stage 31 on which the die D is temporarily placed, and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31.

[0017] The bonding unit 4 picks up a die D from the intermediate stage 31 and bonds it on the package area P of the substrate S being conveyed, or bonds it by stacking it on top of a die already bonded on the package area P of the substrate S. The bonding unit 4 has a bonding head 41 equipped with a collet 42 (see also FIG. 2) that suction-holds the die D at its tip like the pickup head 21, a Y-axis drive unit 43 that moves the bonding head 41 in the Y-axis direction, and a substrate recognition camera 44 that captures an image of a position recognition mark (not shown) in the package area P of the substrate S and recognizes the bonding position. With this configuration, the bonding head 41 corrects the pickup position and posture based on the image data of the stage recognition camera 32, picks up the die D from the intermediate stage 31, and bonds the die D to the substrate based on the image data of the substrate recognition camera 44.

[0018] The transport section 5 has a substrate transport claw 51 that grips and transports the substrate S, and a transport lane 52 along which the substrate S moves. The substrate S moves by driving a nut (not shown) of the substrate transport claw 51 provided on the transport lane 52 by a ball screw (not shown) provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply section 6 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate unloading section 7 and hands the substrate S over to the substrate unloading section 7.

[0019] The control unit 8 includes a memory that stores a program (software) that monitors and controls the operation of each part of the die bonder 10, and a central processing unit (CPU) that executes the program stored in the memory.

[0020] Next, the configuration of the die supply section 1 will be described with reference to Fig. 3. Fig. 3 is a schematic cross-sectional view showing the main part of the die supply section of Fig. 1.

[0021] The die supply unit 1 includes a wafer holder 12 that moves horizontally (in the XY-axis directions) and a peeling unit 13 that moves up and down. The wafer holder 12 has an expand ring 15 that holds a wafer ring 14, and a support ring 17 that horizontally positions a dicing tape 16 that is held by the wafer ring 14 and has multiple dies D attached thereto. The peeling unit 13 is disposed inside the support ring 17.

[0022] When the die D is pushed up, the die supply unit 1 lowers the expand ring 15 holding the wafer ring 14. As a result, the dicing tape 16 held by the wafer ring 14 is stretched, the interval between the dies D is widened, and the peeling unit 13 peels the dies D from the dicing tape 16, improving the pick-up property of the dies D. The adhesive that bonds the dies to the substrate changes from a liquid state to a film state, and a film-like adhesive material called a die attachment film (DAF) 18 is attached between the wafer 11 and the dicing tape 16. In the wafer 11 having the die attachment film 18, dicing is performed on the wafer 11 and the die attachment film 18. Therefore, in the peeling process, the wafer 11 and the die attachment film 18 are peeled off from the dicing tape 16. In the following, the peeling process will be described ignoring the existence of the die attachment film 18.

[0023] As the dicing tape 16, a high-temperature peelable adhesive sheet that loses its adhesive force above a set temperature, or a low-temperature peelable adhesive sheet that loses its adhesive force below a set temperature is used. Here, the high-temperature peelable adhesive sheet and the low-temperature peelable adhesive sheet are called temperature-sensitive adhesive sheets. As the dicing tape 16, for example, a heat-peeling sheet (high-temperature peelable adhesive sheet) that has adhesive force at room temperature and peels off when heated is used. As the heat-peeling sheet, for example, a heat-peeling adhesive sheet (trade name "Riva Alpha" (registered trademark), "Riva Clean"; both manufactured by Nitto Denko Corporation) having a heat-expandable layer containing a foaming agent such as heat-expandable microspheres is used. For example, the 90°C type of "Riva Alpha" is peeled off from a substrate or the like by heating it to 100 to 120°C for 1 minute on a hot plate (heat plate). That is, when heating with a heat plate, in order to make the surface temperature of the high-temperature peelable adhesive sheet (the temperature of the interface with the die attach film 18) the peeling temperature, it is necessary to set the heat plate temperature slightly higher than the peeling temperature. In addition, when using a high-temperature peelable adhesive sheet, it is preferable to use one that peels off at a temperature lower than the curing temperature of the die attachment film 18 (usually 150°C). Furthermore, the curing of the die attachment film 18 is performed by applying a specified temperature for a long time (about 1 hour), and when the heating time of the high-temperature peelable adhesive sheet is short, the peeling temperature of the high-temperature peelable adhesive sheet may be approximately the same as the curing temperature of the die attachment film 18. It is preferable to use a base material for the dicing tape 16 that is thinner than the usual thickness (about 100 μm). The thickness of the dicing tape 16 is, for example, 50 to 80 μm. This can increase the ability to follow the block during adsorption.

[0024] Next, the configuration of the peeling jig will be described with reference to Fig. 4 and Fig. 5. Fig. 4 is a top view of the peeling jig of Fig. 3. Fig. 5 is a cross-sectional view of the peeling jig of Fig. 4 taken along the line AA.

[0025] The peeling unit 13 mainly includes a peeling jig 101 and a driving mechanism (not shown) for raising and lowering the peeling jig 101. As shown in Fig. 4, the peeling jig 101 includes a block 102 for heating the dicing tape 16, a heater 103 for heating the block 102, a temperature sensor 104 for measuring the temperature of the heater 103, a cooling unit 105, a first suction unit 106, a second suction unit 107, a driving unit (not shown) for raising and lowering the block 102, a cylindrical dome 108 for holding them, and a dome plate 109 for covering the dome 108. The peeling jig 101 is, for example, about 83 mm in height and about 32 mm in diameter.

[0026] The block 102 is incorporated in the center of the upper part of the peeling jig 101. The block 102 is rectangular in plan view, and is configured to be approximately the same size as the planar shape of the die D. The block 102 is formed of a material with good thermal conductivity, such as aluminum nitride. The block 102 has a plurality of suction ports 102a penetrating in the vertical direction, and the suction ports 102a communicate with a cavity 106a of a first suction section 106 provided below. The cavity 106a communicates with a pipe 106b and is connected to a vacuum pump as a decompression device (not shown). The inside of each suction port 102a is decompressed by the vacuum pump when the peeling jig 101 is raised and its upper surface is brought into contact with the back surface of the dicing tape 16, and the back surface of the dicing tape 16 at the portion of the die to be picked up is configured to be in close contact with the upper surface of the block 102. The suction port 102a and the first suction section 106 (the cavity 106a and the pipe 106b) form a first vacuum path.

[0027] A heater 103 serving as a heat treatment device is provided in contact with the lower surface of the block 102. A temperature sensor 104 is provided on the heater 103, and the temperature of the heater 103 and therefore the block 102 can be controlled, so that the block 102 can be heated to any desired temperature.

[0028] The dome plate 109 has an opening that allows the block 102 to move up and down, and a plurality of suction ports 109a and a plurality of grooves 109b that connect the plurality of suction ports 109a are provided around the periphery of the dome plate 109. The suction port 109a communicates with a cavity 107a of the second suction section 107 provided below. The cavity 107a is configured in a ring shape around the block 102. The cavity 107a communicates with a pipe 107b and is connected to the vacuum pump. The insides of the suction port 109a and the groove 109b are depressurized by the vacuum pump when the peeling jig 101 is raised and its upper surface is brought into contact with the back surface of the dicing tape 16, and the back surface of the dicing tape 16 in the area other than the die to be picked up is tightly attached to the upper surface of the dome plate 109. The suction port 109a and the second suction section 107 (the cavity 107a and the pipe 107b) form a second vacuum path. The second vacuum path is configured independently of the first vacuum path. That is, the second vacuum path can draw a vacuum at a different timing than the first vacuum path, or at the same timing as the first vacuum path.

[0029] The cooling section 105 is provided below the cavity 107a with a wall therebetween, and is composed of a cavity 105a provided in a ring shape around the block 102, and a pipe 105b communicating with the cavity 105a. The pipe 105b is connected to a cooling gas supply device (not shown). The cooling gas supplied to the cavity 105a is exhausted to the outside of the cooling section 105 from an exhaust hole (not shown) provided in the wall forming the cavity 105a. This makes it possible to prevent the heating of the surrounding dies due to the temperature rise of the dome plate 109 caused by the heat from the block 102. The outer diameter of the pipes 105b, 106b, and 107b is, for example, about 2.5 mm.

[0030] In order to prevent heating of the surrounding dies due to a rise in temperature of the dome plate 109 caused by heat from the block 102, a gap G is provided between the block 102 and the dome plate 109 for air insulation. The width of the gap G is, for example, about 0.5 mm.

[0031] The height of the upper surface of block 102 is configured to be lower than the height of the upper surface of the peripheral portion of the upper surface of peeling jig 101 (dome plate 109) in the initial state (when block 102 is not in operation).

[0032] Next, a method for peeling the die D from the dicing tape 16 using the peeling jig 101 including the block 102 as described above will be described with reference to Fig. 6. Fig. 6 is a timing chart showing a peeling sequence.

[0033] (Step 1) First, the control unit 8 lowers the expand ring 15 of the wafer holder 12, thereby pressing downward the wafer ring 14 adhered to the peripheral portion of the dicing tape 16. In this way, the dicing tape 16 is subjected to a strong tension from the center toward the peripheral portion, and is stretched horizontally without slack, and the interval between the dies D increases.

[0034] (Step 2) 3, the control unit 8 moves the wafer holder 12 so that the center (block 102) of the peeling jig 101 is positioned directly below one die D to be peeled (the die D located in the center of the figure), and moves the collet 22 above this die D. The bottom surface of the collet 22 supported by the pickup head 21 is provided with a suction port (not shown) whose inside is depressurized, and is configured to selectively suction and hold only the one die D to be peeled.

[0035] (Step 3: STP3) Next, the control unit 8 places the top surface of the block 102 slightly lower than the top surface of the dome plate 109 (initial state), raises the peeling jig 101 so that its top surface comes into contact with the back surface of the dicing tape 16, and reduces the pressure inside the suction port 109a and groove 109b of the dome plate 109. As a result, the dicing tape 16 below the other die D adjacent to the die D to be peeled is tightly attached to the dome plate 109. In parallel with this, the control unit 8 gradually lowers the pickup head 21, and stops the descent when the collet 22 reaches a predetermined height above the die D. The control unit 8 also heats the surface temperature of the block 102 to the preheat temperature by the heater 103. The preheat temperature (T p ) is a temperature at which the dicing tape 16 does not peel off from the die D and is higher than the room temperature where no heating is performed, for example, 60° C. Then, the heater 103 heats the surface temperature of the block 102 to a heating target temperature (T h Heating is started so that the target temperature (T h ) is, for example, 120° C. The upper heating limit temperature (T H The upper heating temperature limit (T H ) is, for example, 130°C. H ), heating target temperature (T h ), preheat temperature (T p ) may change depending on the characteristics of the dicing tape.

[0036] (Step 4: STP4) When the surface temperature of block 102 has risen to the heating target temperature after the heating time (th), control unit 8 raises block 102 to the same height as the upper surface of dome plate 109 and reduces the pressure inside suction port 102a of block 102. As a result, dicing tape 16 below die D to be peeled comes into close contact with the upper surface of block 102 and dicing tape 16 is heated. After a predetermined time has elapsed since block 102 has risen to a predetermined height, control unit 8 gradually lowers pickup head 21, and stops the descent when collet 22 reaches the height of die D. Control unit 8 heats block 102 at a predetermined temperature for a predetermined time using heater 103.

[0037] (Step 5: STP5) Thereafter, the control unit 8 stops heating the block 102 by the heater 103, and causes the suction port of the collet 22 to suck the die D and gradually raise the pickup head 21. When the collet 22 rises to a predetermined height above the upper surface of the dome plate 109, the control unit 8 switches the rising speed to a high speed and raises the collet 22.

[0038] (Step 6: STP6) When collet 22 of pickup head 21 reaches a predetermined height (allowed lowering height) from the top surface of dome plate 109, control unit 8 lowers block 102 and stops suction by suction port 102a of block 102 and suction by suction port 109a of dome plate 109.

[0039] Next, a method for manufacturing a semiconductor device using the die bonder according to the embodiment will be described with reference to Fig. 7. Fig. 7 is a flow chart showing a method for manufacturing a semiconductor device using the die bonding of Fig. 1.

[0040] (Wafer / substrate loading process: step S11) The wafer ring 14 holding the dicing tape 16 to which the die D separated from the wafer 11 is affixed is stored in a wafer cassette (not shown) and is carried into the die bonder 10. The control unit 8 supplies the wafer ring 14 from the wafer cassette filled with the wafer ring 14 to the die supply unit 1. In addition, the control unit 8 prepares the substrate S and carries it into the die bonder 10. The control unit 8 attaches the substrate S to the substrate transport claws 51 in the substrate supply unit 6.

[0041] (Pickup process: step S12) The control unit 8 peels off the die D as described above, and picks up the peeled die D from the wafer 11. In this way, the die D peeled off from the dicing tape 16 together with the die attachment film 18 is attracted to and held by the collet 22 and transported to the next process (step S13). Then, when the collet 22 that transported the die D to the next process returns to the die supply unit 1, the next die D is peeled off from the dicing tape 16 according to the above-mentioned procedure, and thereafter, the dies D are peeled off from the dicing tape 16 one by one according to the same procedure.

[0042] (Bonding process: step S13) The control unit 8 mounts the picked-up die on the substrate S or stacks it on top of an already bonded die. The control unit 8 places the die D picked up from the wafer 11 on the intermediate stage 31, and the bonding head 41 picks up the die D again from the intermediate stage 31 and bonds it to the transported substrate S.

[0043] (Substrate removal process: step S14) The control unit 8 causes the substrate unloading unit 7 to take out the substrate S having the bonded die D from the substrate transport claws 51. The substrate S is then unloaded from the die bonder 10.

[0044] As described above, the die D is mounted on the substrate S via the die attachment film 18 and is carried out from the die bonder. Thereafter, in the wire bonding process, the die D is electrically connected to the electrode of the substrate S via the Au wire. Next, the substrate S on which the die D is mounted is carried into the die bonder, and the second die D is stacked on the die D mounted on the substrate S via the die attachment film 18, and after being carried out from the die bonder, is electrically connected to the electrode of the substrate S via the Au wire in the wire bonding process. The second die D is peeled off from the dicing tape 16 by the above-mentioned method, and then carried to the pelleting process and stacked on the die D. After the above process is repeated a predetermined number of times, the substrate S is carried to the molding process, and the multiple dies D and the Au wires are sealed with molding resin (not shown), thereby completing a stacked package.

[0045] According to the embodiment, one or more of the following advantages can be obtained. (1) By heating with a block whose outer shape matches the die size, it is possible to reduce the conduction of heat to the dies (peripheral dies) located around the die to be picked up (die to be peeled) and to the dicing tape under the peripheral dies. This makes it possible to prevent the peripheral dies from peeling off easily and reduce the risk of damage. (2) Cooling the dome plate can further reduce heat conduction to the peripheral die and the dicing tape underneath the peripheral die. (3) By sandwiching the dicing tape and heating from the opposite side of the die, it is possible to prevent excess heat from being transferred to the die surface. (4) The dome plate and the block are driven independently, so that the outer periphery of the die to be peeled can be held without heating the die, enabling accurate alignment of the die to be peeled. (5) Since the block is not pushed up higher than the die plate, it can be picked up with low stress, which reduces cracking and chipping of the die.

[0046] As described above, when assembling a stacked package in which a plurality of dies are three-dimensionally mounted on a substrate, it is required to thin the thickness of the die to 20 μm or less in order to prevent an increase in the thickness of the package. On the other hand, since the thickness of the dicing tape is about 100 μm, the thickness of the dicing tape is 4 to 5 times the thickness of the die. When the die becomes thin, the rigidity of the die becomes extremely low compared to the adhesive strength of the dicing tape. Therefore, for example, in order to pick up a thin die of 20 μm or less, it is necessary to reduce the stress applied to the die (reduce stress). When such a thin die is peeled off from the dicing tape, the deformation of the die following the deformation of the dicing tape is more likely to occur, but the die bonder of this embodiment can reduce damage to the die when picking up the die from the dicing tape.

[0047] <Modification> Below, some representative modified examples of the embodiment are exemplified. In the following description of the modified examples, the same reference numerals as those in the above-mentioned embodiment may be used for parts having the same configuration and function as those described in the above-mentioned embodiment. The description of such parts may be appropriately cited within the scope of technical inconsistency. Furthermore, a part of the above-mentioned embodiment and all or a part of the multiple modified examples may be appropriately applied in a composite manner within the scope of technical inconsistency.

[0048] (First Modification) The peeling jig in the first modified example will be described with reference to Fig. 8. Fig. 8 is a cross-sectional view of the peeling jig in the first modified example.

[0049] The peeling jig 201 in the first modification includes a Peltier element 210 as a semiconductor heating and cooling element that generates a temperature difference by passing an electric current between the block 102 and the dome plate 109 in an annular manner, instead of the heater 103 and the cooling unit 105 in the embodiment. Here, the Peltier element 210 is a heat treatment device and also a cooling unit. The upper surface of the Peltier element 210 as a cooling surface is abutted against the dome plate 109, and the lower surface as a heat dissipation surface is abutted against the block 102. Here, it is preferable to fix the lower surface of the Peltier element 210 on the flat surface of the block 102 located below the cavity 107a of the second suction unit 107, and to configure the block 102 to be raised so that the upper surface of the Peltier element 210 abuts against the lower surface of the wall constituting the cavity 107a of the second suction unit 107. This makes it possible to heat the block 102 before the block 102 abuts against the dicing tape 106.

[0050] With the above configuration, the Peltier element 210 can cool the dome plate 109 and heat the block 102. In addition, a cooling gas supply device or the like is not required, and the heat dissipation of the Peltier element 210 can be used to heat the push-up block, making it possible to achieve a compact size and high energy efficiency.

[0051] If the temperature of block 102 needs to be higher and the heat dissipation of Peltier element 210 is insufficient to heat block 102 to the processing temperature, heater 103 provided in the embodiment may be used in addition to the above to heat block 102 to the processing temperature. Also, when a low-temperature peelable dicing tape is used, cooling of block 102 and heating of dome plate 109 can be similarly achieved by controlling the polarity of the current supplied to wiring 210a, 210b of Peltier element 210 to be reversed.

[0052] (Second Modification) The peeling jig in the second modified example will be described with reference to Fig. 9. Fig. 9 is a cross-sectional view of the peeling jig in the second modified example.

[0053] The peeling jig 301 in the second modified example includes an infrared lamp 320 as a heat treatment device in a block 302, instead of the heater 103 in the embodiment. The peeling jig 301 does not include the cooling unit 105 and the first suction unit 106 in the embodiment. The block 302 has an opening 302a having a shape corresponding to the die D, and the infrared lamp 320 heats the dicing tape 16 directly without passing through the block 302. This makes it possible to selectively heat a portion of the dicing tape 16 located below the die D to be picked up, and to peel the die D from the dicing tape 16 in the same manner as in the embodiment.

[0054] The inner surface of the block 302 in which the infrared lamp 320 is built may be coated with a reflective material 302b by gold plating or aluminum deposition, which has a high reflectivity to infrared rays. This makes it possible to more efficiently guide infrared rays to the portion of the dicing tape 16 below the die to be peeled off.

[0055] Furthermore, a plate 302c made of a material with high infrared transmittance, such as quartz glass, may be provided in the opening 302a of the block 302. This maintains the flatness of the die D, making it easier to pick up the die with the collet 22.

[0056] (Third Modification) The peeling jig in the third modified example will be described with reference to Fig. 10. Fig. 10 is a cross-sectional view of the peeling jig in the third modified example.

[0057] The third modification includes a laser irradiation unit 430 that can change the area and size of irradiation as desired, instead of the infrared lamp of the second modification. The laser irradiation unit 430 as a heat treatment device has a condenser lens unit 430a, and heats the dicing tape 16 directly without the block 402, similar to the infrared lamp 320 in the second modification. Here, the laser irradiation unit 430 is provided inside the block 402, but a laser light source (not shown) is installed outside and introduced to the laser irradiation unit 430 by an optical fiber 430b or the like. This allows the laser light to be selectively irradiated to a portion of the dicing tape 16 located under the die D to be picked up, and the die D can be peeled off from the dicing tape 16 as in the embodiment.

[0058] The above-mentioned laser light source and laser irradiation unit 430 can arbitrarily change the size of the laser light and the irradiation time, so that when the size of the die as a semiconductor product or the processing conditions of the processing temperature are changed, they can be freely changed by program, and it becomes possible to minimize the replacement of the peeling jig. In addition, since the energy of the laser light can be concentrated only on the irradiation area, the temperature rise of the dome plate 109 and the like outside the irradiation area can be minimized.

[0059] Also, as in the second modified example, a plate 402c made of a material having high transmittance to the laser light to be used, such as quartz glass, may be provided in the opening 402a of the block 402. This maintains the flatness of the die D, making it easier to pick up the die with the collet 22.

[0060] (Fourth to Seventh Modifications) In the embodiment, the suction port 102a provided in the block 102 is disposed in the center in a plan view. In the fourth to seventh modified examples, in addition to the center, suction ports are provided in at least the four corners of the rectangle formed by the upper surface of the block 102a, that is, in a region outside a virtual circle or virtual ellipse inscribed in the four sides of the rectangle.

[0061] The peeling jigs in the fourth to seventh modified examples will be described with reference to Fig. 11. Fig. 11 is a diagram for explaining the peeling jigs in the fourth to seventh modified examples. Fig. 11(a) is a top view of a block of the peeling jig in the fourth modified example. Fig. 11(b) is a top view of a block of the peeling jig in the fifth modified example. Fig. 11(c) is a top view of a block of the peeling jig in the sixth modified example. Fig. 11(d) is a top view of a block of the peeling jig in the seventh modified example.

[0062] In the fourth to seventh variants, the block 102 in the embodiment has a number, arrangement or diameter of multiple suction ports 102a that penetrate in the vertical direction, which are changed to more uniformly adsorb the dicing tape 16 on the underside of the die D and heat it more uniformly.

[0063] 11(a), in the fourth modification, four suction ports 102a are provided in the center of the block 102 and one suction port 102a is provided at each of the four corners. Compared to the embodiment in which the suction ports 102a are provided only in the center, the suction port 102a is also expected to have a suction effect on the outer periphery. Here, the diameter of the suction port 102a is, for example, 0.8 mm.

[0064] As shown in FIG. 11(b), in the fifth modified example, the suction ports 102a are disposed on the entire surface of the block 102. By sucking the entire die D evenly, it is possible to heat it uniformly. Here, the pitch (PT) of the suction ports 102a is, for example, 2 mm. The diameter of the suction port 102a on the outermost periphery is, for example, 0.6 to 0.8 mm, and the diameter of the suction port 102a on the inner side is, for example, 0.8 mm. The distance (wall thickness, W) from the suction port 102a on the outermost periphery to the end of the block 102 is, for example, about 0.5 mm.

[0065] 11(c), in the sixth modified example, a plurality of suction ports 102a and a plurality of grooves 102c connecting the plurality of suction ports 102a are provided in the block 102. By providing the grooves 102c, it is possible to fill in the gaps between the suction ports 102a.

[0066] As shown in Fig. 11(d), in the seventh modification, the block 102 is composed of a central portion 102d made of porous metal and a frame portion 102e surrounding the outer periphery of the central portion 102d. Suction is performed through holes 102f formed in the central portion 102d. The frame portion 102e prevents leakage from the sides of the central portion 102d. The entire surface can be adsorbed while securing the bonding area with the die.

[0067] The disclosure made by the present inventors has been specifically described above based on embodiments and modified examples. However, it goes without saying that the present disclosure is not limited to the above-described embodiments and modified examples, and various modifications are possible.

[0068] For example, in the embodiment, the height at which the collet picks up the die is the height of the die surface, but it is also possible to wait at the height of the die surface after the dicing tape is foamed, or to raise the collet in accordance with the rise in die height due to foaming. A sensor may be provided in the pick-up head, and the pressing load may be controlled in real time using the sensor to keep it constant.

[0069] In the embodiment, the block is preheated to a preheat temperature (T p ) was explained, but preheating is not performed and the block is heated to the heating target temperature (T h ) may be left heated.

[0070] In addition, in the embodiment, the temperature of the block is measured by a temperature sensor provided on the heater of the block, but this is not limited to this, and an infrared radiation temperature sensor or the like may be provided to directly measure the die to be heated or the dicing tape formed from a heat-peelable adhesive sheet.

[0071] In the above embodiment, the cooling gas is supplied to the cavity of the cooling unit, but a cooling liquid may be supplied to the cavity. In this case, the cooling liquid is collected by a pipe or the like.

[0072] In the embodiment, an example in which a high-temperature peelable adhesive tape is used as the dicing tape has been described, but a low-temperature peelable adhesive tape may be used. In this case, the heat treatment of the heater 103 and the cooling unit 105 are switched, and the cooling unit is provided below the block 102, and the heating unit is provided below the dome plate.

[0073] In the embodiment, the collet is brought into contact with the die while the block is being heated, but the collet may not be brought into contact with the die while the block is being heated. This makes it possible to prevent heat from being transferred from the die to the collet.

[0074] In the third modified example, an example was described in which the opening 402a of the block 402 is provided with the plate 402c made of a material with high transmittance to laser light, but the opening 402a of the block 402 may be covered with a plate made of a material that generates heat by absorbing laser light, and the dicing tape may be indirectly heated by irradiating the plate with laser light to heat it. In this case, it is preferable to provide a suction port similar to the suction port 102a of the embodiment in the plate, and provide a suction unit similar to the first suction unit 106 of the embodiment below the suction port.

[0075] In the embodiment, the die D on the dicing tape 16 is vacuum (reduced pressure) adsorbed and fixed by the suction port provided in the block 102, but the present invention is not limited to this, and for example, the block may be configured using an electrostatic adsorption chuck with a heater function to adsorb the dicing tape 16 on the underside of the die D. This eliminates the need for suction ports or grooves for vacuum adsorption in the block, allowing for more uniform heating.

[0076] In addition, in the embodiment, an example in which a die attach film is used has been described, but it is also possible to provide a preform portion for applying an adhesive to the substrate and not use a die attach film.

[0077] In addition, in the embodiment, a die bonder has been described in which a die is picked up from a die supply section by a pick-up head and placed on an intermediate stage, and the die placed on the intermediate stage is bonded to a substrate by a bonding head, but the present invention is not limited to this and can be applied to semiconductor manufacturing equipment that picks up a die from a die supply section.

[0078] For example, the present invention can be applied to a die bonder that does not have an intermediate stage and a pickup head, and bonds a die from a die supply unit to a substrate with a bonding head. In this case, when a positional deviation occurs between the collet and the die, an under-vision camera or the like may be used to recognize the positional deviation of the die and perform bonding correction.

[0079] The present invention can also be applied to a flip chip bonder that does not have an intermediate stage, picks up a die from a die supply section, rotates the die pickup head upward, and delivers the die to the bonding head, which then bonds the die to a substrate.

[0080] The present invention can also be applied to a die sorter that does not have an intermediate stage and a bonding head, and in which dies picked up by a pick-up head from a die supply section are placed on a tray or the like. [Explanation of symbols]

[0081] 10: Die bonder 12: Wafer holder 13: Peeling unit 101: Peeling tool 102: Block 103: Heater (heat treatment device) 108: Dome 109: Dome plate 16: Dicing tape 21: Pickup head D: Die

Claims

1. A wafer holder that holds a dicing tape formed of a thermal release sheet; a peeling unit that peels off the die attached to the dicing tape; a head for picking up the die peeled off from the dicing tape; Equipped with The peeling unit includes: A cylindrical dome and a block provided within the cylindrical dome, the block having a suction port and adapted to come into contact with a portion of the dicing tape to which a die to be peeled is attached; a dome plate provided on an upper portion of the cylindrical dome, located on an outer periphery away from the block, and in contact with a portion of the dicing tape on which the die to be peeled is not attached; a heat treatment device provided within the cylindrical dome, in contact with a lower surface of the block, and configured to heat the block to a temperature at which the dicing tape is peeled off from the die to be peeled off; A die bonding apparatus comprising:

2. 2. The die bonding apparatus according to claim 1, Further, a cooling unit that cools the dome plate is provided, the heat treatment device is a heater that heats the block, The cooling unit includes: a cavity below the dome plate; A pipe through which a cooling gas is supplied and which is connected to the cavity; A die bonding apparatus comprising:

3. 2. The die bonding apparatus according to claim 1, Further, a cooling unit having a semiconductor cooling element provided below the dome plate, A die bonding apparatus configured to cool the dome plate with a cooling surface of the semiconductor cooling element.

4. 4. The die bonding apparatus according to claim 3, A die bonding apparatus configured to heat the block by a heat dissipation surface of the semiconductor heating / cooling element.

5. 5. The die bonding apparatus according to claim 1, The peeling unit further comprises: a first vacuum path for reducing the pressure at the suction port of the block; a second vacuum path that is independent of the first vacuum path and that reduces pressure at a suction port of the dome plate; A die bonding apparatus comprising:

6. 5. The die bonding apparatus according to claim 1, Further, a control unit is provided, The control unit is a die bonding apparatus configured to heat the block to a first predetermined temperature using the heat treatment device and to adsorb the dicing tape using a suction port of the dome plate while making the top surface of the block lower than the top surface of the dome plate.

7. 7. The die bonding apparatus according to claim 6, The control unit is a die bonding apparatus configured to heat the block to a second predetermined temperature using the heat treatment device, and to abut an upper surface of the block against the dicing tape and adsorb the dicing tape using a suction port of the block.

8. 8. The die bonding apparatus according to claim 7, The control unit is configured to set the second predetermined temperature to a temperature higher than the first predetermined temperature.

9. 8. The die bonding apparatus according to claim 7, The control unit is configured to set the second predetermined temperature to the same temperature as the first predetermined temperature.

10. 9. The die bonding apparatus according to claim 8, The control unit is configured to pick up the die to be peeled from the heated dicing tape by the head.

11. 2. The die bonding apparatus according to claim 1, A die bonding apparatus in which the shape of the block in a plan view matches the shape of the die in a plan view.

12. 6. The die bonding apparatus according to claim 5, A die bonding apparatus in which the suction ports of the block are provided, in a plan view, in a plurality of ports inside and a plurality of ports outside an imaginary circle or an imaginary ellipse inscribed on the four sides of the block.

13. A peeling tool for peeling off a die attached to a dicing tape formed of a thermal peeling sheet, comprising: A cylindrical dome and a block provided within the cylindrical dome, the block having a suction port and adapted to come into contact with a portion of the dicing tape to which a die to be peeled is attached; a dome plate provided on an upper portion of the cylindrical dome, located on an outer periphery away from the block, and in contact with a portion of the dicing tape on which the die to be peeled is not attached; a heat treatment device provided within the cylindrical dome, in contact with a lower surface of the block, and configured to set the block to a temperature at which the dicing tape is peeled off from the die to be peeled off; A peeling tool comprising:

14. The peeling jig according to claim 13, Further, a cooling unit that cools the dome plate is provided, the heat treatment device is a heater that heats the block, The cooling unit includes: a cavity below the dome plate; A pipe through which a cooling gas is supplied and which is connected to the cavity; A peeling tool comprising:

15. The peeling jig according to claim 14, further comprising: a first vacuum path for reducing the pressure at the suction port of the block; a second vacuum path that is independent of the first vacuum path and that reduces pressure at a suction port of the dome plate; A peeling tool comprising:

16. (a) carrying a wafer ring holding the dicing tape into a die bonding apparatus including a peeling unit for peeling off a die attached to a dicing tape formed of a thermal release sheet, the peeling unit including a cylindrical dome, a block provided within the cylindrical dome, the block having a suction port and contacting a portion of the dicing tape to which the die to be peeled is attached, a dome plate provided on an upper portion of the cylindrical dome, located on the outer periphery away from the block, and contacting a portion of the dicing tape to which the die to be peeled is not attached, and a heat treatment device provided within the cylindrical dome, contacting a lower surface of the block, and heating the block; (b) loading a substrate; (c) peeling the die with the peeling unit and picking up the peeled die; having The method for manufacturing a semiconductor device includes heating the block to a second predetermined temperature at which the dicing tape is peeled off from the die to be peeled off, in the step (c).

17. 17. The method of manufacturing a semiconductor device according to claim 16, The step (c) further comprises cooling the dome plate.

18. 18. The method of manufacturing a semiconductor device according to claim 17, The (c) step is a manufacturing method for a semiconductor device in which the block is heated to a first predetermined temperature and the dicing tape is adsorbed by a suction port of the dome plate while the top surface of the block is lower than the top surface of the dome plate.

19. 20. The method of claim 18, further comprising the steps of: The step (c) comprises heating the block to the second predetermined temperature, bringing an upper surface of the block into contact with the dicing tape, and suctioning the block by a suction port.

20. 20. The method of claim 19, further comprising the steps of: The method for manufacturing a semiconductor device, wherein the first predetermined temperature is set to a temperature lower than the second predetermined temperature.

21. 20. The method of claim 19, further comprising the steps of: The method for manufacturing a semiconductor device, wherein the first predetermined temperature is set to be the same as the second predetermined temperature.

22. 22. The method of manufacturing a semiconductor device according to claim 20, The step (c) is a method for manufacturing a semiconductor device, comprising picking up the die to be peeled from the heated dicing tape.

23. The method of manufacturing a semiconductor device according to claim 22, further comprising: (d) bonding the picked up die onto the substrate or onto an already bonded die.

24. 24. The method of manufacturing a semiconductor device according to claim 23, The step (c) further includes a step of placing the picked-up die on an intermediate stage, The method for manufacturing a semiconductor device, wherein the step (d) further comprises the step of picking up the die from the intermediate stage.

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