Semiconductor element and semiconductor device

Abstract

To provide a semiconductor element capable of preventing a bonding layer from intruding into en electrode, and a semiconductor device including the semiconductor element.SOLUTION: A semiconductor element A10 comprises an element body 10 having a surface 10A facing in a thickness direction z and side faces 10C that face a direction perpendicular to the thickness direction z and join the surface 10A, a surface protection film 20 that has notches 21 recessed in a direction perpendicular to the thickness direction z and that is disposed on the surface 10A, and an electrode (first electrode 311) that is conducted with the element body 10. In the first cross section including the thickness direction z in an in-plane direction, the electrode is disposed on the surface 10A and surrounded by the notch 21. The element body 10 is provided with banks 111 which protrude from side faces 10C in a direction perpendicular to the thickness direction z. When viewed from the thickness direction z, the banks 111 are located near openings of the notices 21.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a semiconductor element and a semiconductor device on which the semiconductor element is mounted. [Background technology]

[0002] Conventionally, semiconductor elements using polyimide, which has excellent heat resistance, mechanical strength, chemical stability, and electrical insulation properties, as a constituent material of a surface protective film have been widely known. Patent Document 1 discloses an example of such a semiconductor element. The semiconductor element includes a plurality of electrodes (bonding pads in Patent Document 1) and a surface protective film (polyimide film in Patent Document 1) having openings for exposing the plurality of electrodes.

[0003] The semiconductor element is generally bonded to a die pad or the like via a bonding layer (called a die bonding material in Patent Document 1) made of silver paste. In the semiconductor device, minute voids are formed in the surface protection film made of polyimide. When moisture penetrates into the voids, silver contained in the bonding layer is taken into the voids by ion migration. This causes a problem of a decrease in the electrical insulation of the surface protection film, causing a short circuit of multiple electrodes.

[0004] In view of this, a possible measure is to remove a portion of the surface protection film located between the opening and the periphery of the semiconductor element in the opening located near the periphery of the semiconductor element when viewed in the thickness direction. By taking such a measure, it is expected that ion migration of silver contained in the bonding layer can be suppressed. However, if a portion of the surface protection film is removed, the bonding layer may reach the electrode due to capillary action, which may cause a wire connection failure at the electrode. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2011-71381 A Summary of the Invention [Problem to be solved by the invention]

[0006] In view of the above circumstances, an object of the present invention is to provide a semiconductor element capable of preventing a bonding layer from reaching an electrode, and a semiconductor device having the semiconductor element mounted thereon. [Means for solving the problem]

[0007] According to a first aspect of the present invention, there is provided a semiconductor element comprising: an element body having a surface facing a thickness direction and a side facing a direction perpendicular to the thickness direction and connected to the surface; a surface protective film having a notch recessed inward from the periphery when viewed in the thickness direction and arranged on the surface; and an electrode arranged on the surface, surrounded by the notch, and conductive to the element body, wherein the element body is provided with a dam portion protruding from the side surface in a direction perpendicular to the thickness direction, and when viewed in the thickness direction, the dam portion is located in the vicinity of an opening of the notch.

[0008] In carrying out the present invention, the material constituting the surface protection film preferably contains polyimide.

[0009] In the practice of the present invention, the material constituting the electrodes preferably includes gold.

[0010] In the implementation of the present invention, preferably, the element body includes a semiconductor substrate, a semiconductor layer having the surface and laminated on the semiconductor substrate, the semiconductor layer being electrically connected to the electrode, and a passivation film disposed on the semiconductor layer, and the surface protection film is a passivation film formed on the passivation film. The dam portion is in contact with the insulation film and is provided on the semiconductor substrate.

[0011] In implementing the present invention, preferably, the semiconductor substrate has a back surface facing opposite to the front surface, and the dam portion has a top surface facing the side in the thickness direction toward which the front surface faces, and a bottom surface facing opposite to the top surface, and the bottom surface is flush with the back surface.

[0012] In the practice of the present invention, the top surface is preferably a concave curved surface.

[0013] In implementing the present invention, preferably, the semiconductor substrate has a back surface facing opposite the front surface, and the dam portion has a top surface facing the side in the thickness direction to which the front surface faces, and a bottom surface facing opposite the top surface, and in the thickness direction, the bottom surface is spaced away from the back surface toward the front surface.

[0014] In the practice of the present invention, the top surface is preferably a concave curved surface.

[0015] In carrying out the present invention, the bottom surface is preferably a concave curved surface.

[0016] In carrying out the present invention, it is preferable that, as viewed in the thickness direction, the dam portion extends along one direction perpendicular to the thickness direction.

[0017] In carrying out the present invention, it is preferable that the dam portion is positioned around the entire periphery of the element body when viewed in the thickness direction.

[0018] In carrying out the present invention, preferably, the element body includes a wiring layer that is electrically connected to both the semiconductor layer and the electrode, and the wiring layer is in contact with the passivation film.

[0019] In carrying out the present invention, preferably, the semiconductor device further comprises a barrier film interposed between the wiring layer and the electrode in the thickness direction, and the composition of the barrier film contains titanium.

[0020] According to a second aspect of the present invention, there is provided a semiconductor device comprising: a semiconductor element including a semiconductor substrate having a back surface; a die pad on which the semiconductor element is mounted; and a bonding layer including a portion interposed between the die pad and the back surface, wherein the bonding layer contains silver particles.

[0021] In a preferred embodiment of the present invention, the semiconductor device further comprises a terminal disposed away from the die pad, and a wire connected to the terminal and the electrode.

[0022] In carrying out the present invention, preferably, a sealing resin is further provided to cover the semiconductor element and the wires. Effect of the Invention

[0023] According to the semiconductor element of the present invention, it is possible to prevent the bonding layer from reaching the electrode of a semiconductor device in which the semiconductor element is mounted.

[0024] Other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0025] [Figure 1] 1 is a plan view of a semiconductor element according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is a cross-sectional view taken along line II-II in FIG. [Diagram 3] FIG. 2 is a cross-sectional view taken along line III-III in FIG. [Figure 4] FIG. 2 is a cross-sectional view taken along line IV-IV in FIG. [Diagram 5] FIG. 4 is a partial enlarged view of FIG. 2 and FIG. [Figure 6] FIG. 4 is a partial enlarged view of FIG. 2 and FIG. [Figure 7] 2A to 2C are cross-sectional views illustrating a manufacturing process of the semiconductor element shown in FIG. [Figure 8] 2A to 2C are cross-sectional views illustrating a manufacturing process of the semiconductor element shown in FIG. [Figure 9] 2A to 2C are cross-sectional views illustrating a manufacturing process of the semiconductor element shown in FIG. [Figure 10] FIG. 4 is a plan view of a semiconductor element according to a modified example of the first embodiment of the present invention. [Figure 11] 11 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] 12 is a cross-sectional view taken along line XII-XII in FIG. 10. [Figure 13] 1 is a perspective view of a semiconductor device according to a first embodiment of the present invention. [Figure 14] 14 is a plan view (through a sealing resin) of the semiconductor device shown in FIG. 13. [Figure 15] FIG. 14 is a front view of the semiconductor device shown in FIG. [Figure 16] 14 is a right side view of the semiconductor device shown in FIG. 13. [Figure 17] FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. [Figure 18] 15 is a cross-sectional view taken along line XVIII-XVIII in FIG. 14. [Figure 19] FIG. 18 is a partially enlarged view of FIG. [Figure 20] FIG. 4 is a plan view of a semiconductor element according to a second embodiment of the present invention. [Figure 21] FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 20. [Figure 22] FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 20. [Diagram 23] FIG. 22 is a partially enlarged view of FIG. [Figure 24] 21A to 21C are cross-sectional views illustrating a manufacturing process of the semiconductor element shown in FIG. 20. [Diagram 25] 21A to 21C are cross-sectional views illustrating a manufacturing process of the semiconductor element shown in FIG. 20. [Figure 26] 21A to 21C are cross-sectional views illustrating a manufacturing process of the semiconductor element shown in FIG. 20. [Figure 27] 11 is a plan view (through a sealing resin) of a semiconductor device according to a second embodiment of the present invention. FIG. [Figure 28] 28 is a cross-sectional view taken along line XXVIII-XXVIII in FIG. 27. [Figure 29] 28 is a cross-sectional view taken along line XXIX-XXIX in FIG. 27. [Diagram 30] FIG. 29 is a partially enlarged view of FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the accompanying drawings.

[0027] [First embodiment] A semiconductor element A10 according to a first embodiment of the present invention and a semiconductor device B10 including the semiconductor element A10 will be described with reference to FIGS.

[0028] <Semiconductor element A10> The semiconductor element A10 will be described with reference to Figures 1 to 6. The semiconductor element A10 shown in these figures comprises an element body 10, a surface protection film 20, a plurality of first electrodes 311, a plurality of second electrodes 312 and a plurality of barrier films 32.

[0029] In the description of the semiconductor element A10, for convenience, the normal direction of a surface 10A of the element body 10 described later is referred to as the "thickness direction z." The direction perpendicular to the thickness direction z is referred to as the "first direction x." The direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y."

[0030] As shown in FIG. 1, the element body 10 has a rectangular shape when viewed in the thickness direction z. The element body 10 has a front surface 10A, a back surface 10B, and a side surface 10C. The front surface 10A faces the thickness direction z. The back surface 10B faces the opposite side to the front surface 10A. The side surface 10C faces a direction perpendicular to the thickness direction z and is connected to the front surface 10A. In the semiconductor element A10, the side surface 10C includes a pair of first regions 101C facing the first direction x and a pair of second regions 102C facing the second direction y. As shown in FIGS. 2 to 5, the element body 10 includes a semiconductor substrate 11, a semiconductor layer 12, an interlayer insulating film 13, a wiring layer 14, and a passivation film 15.

[0031] 2 to 4, the semiconductor substrate 11 supports a semiconductor layer 12. The constituent material of the semiconductor substrate 11 is, for example, undoped silicon (Si). The semiconductor substrate 11 has a back surface 10B.

[0032] 2 to 4, the semiconductor layer 12 is laminated on a semiconductor substrate 11. In the semiconductor layer 12, a circuit including a plurality of transistors and the like is configured using p-type and n-type semiconductors. The semiconductor layer 12 is formed by epitaxial growth. The semiconductor layer 12 has a surface 10A.

[0033] 5, the interlayer insulating film 13 covers the surface 10A of the semiconductor layer 12. The interlayer insulating film 13 is made of at least one of a silicon oxide (SiO2) film and a silicon nitride (Si3N4) film. The interlayer insulating film 13 is formed by plasma CVD (Chemical Vapor Deposition) or the like.

[0034] As shown in FIG. 5, the wiring layer 14 is disposed in contact with the surface 10A of the semiconductor layer 12. The wiring layer 14 is electrically connected to the semiconductor layer 12. The wiring layer 14 is made of one or more metals selected from a group of metal materials including, for example, aluminum (Al), copper (Cu), titanium (Ti), tungsten (W), and tantalum (Ta). The wiring layer 14 includes a first wiring layer 141 and a second wiring layer 142. The first wiring layer 141 is in contact with both the surface 10A and the interlayer insulating film 13. The second wiring layer 142 is stacked on the first wiring layer 141.

[0035] As shown in FIG. 5, the passivation film 15 is laminated on the interlayer insulating film 13. Therefore, the passivation film 15 is disposed on the semiconductor layer 12. The passivation film 15 has electrical insulation properties. The passivation film 15 includes a first film 151 and a second film 152. The constituent material of the first film 151 and the second film 152 is, for example, silicon nitride. Of these, the constituent material of the first film 151 may be silicon oxide instead of silicon nitride. The first film 151 is in contact with both the interlayer insulating film 13 and the second wiring layer 142 of the wiring layer 14. The second film 152 is laminated on the first film 151. The second film 152 is in contact with both the multiple first electrodes 311 and the multiple second electrodes 312. The passivation film 15 is provided with multiple openings 15A penetrating the first film 151 and the second wiring layer 142 in the thickness direction z. From each of the multiple openings 15A, either the first electrode 311 or the second electrode 312 is exposed.

[0036] As shown in Figs. 2 to 5, the surface protective film 20 is disposed in contact with the passivation film 15. Therefore, the surface protective film 20 is disposed on the surface 10A of the element body 10 (semiconductor layer 12). The surface protective film 20 has electrical insulation properties. The constituent material of the surface protective film 20 includes polyimide. The surface protective film 20 has a plurality of cutouts 21 and a plurality of openings 22.

[0037] As shown in FIGS. 1, 2, and 4, the multiple cutouts 21 are regions recessed inward from the periphery of the surface protective film 20 as viewed in the thickness direction z. Therefore, as viewed in the thickness direction z, each of the multiple cutouts 21 opens toward the outside of the semiconductor element A10. In the semiconductor element A10, at least a portion of the multiple cutouts 21 opens in both the first direction x and the second direction y as viewed in the thickness direction z. As shown in FIGS. 1 and 3, the multiple openings 22 penetrate the surface protective film 20 in the thickness direction z. Each of the multiple openings 22 is surrounded by the surface protective film 20 over its entire periphery.

[0038] As shown in FIG. 5, the first electrodes 311 and the second electrodes 312 are disposed on the wiring layer 14 of the element body 10. Therefore, the first electrodes 311 and the second electrodes 312 are disposed on the surface 10A of the element body 10 (semiconductor layer 12). The first electrodes 311 and the second electrodes 312 are made of a material containing gold (Au). The first electrodes 311 and the second electrodes 312 are electrically connected to the wiring layer 14 via the barrier films 32. Therefore, the first electrodes 311 and the second electrodes 312 are electrically connected to the semiconductor layer 12 of the element body 10. In addition, the wiring layer 14 is electrically connected to both the semiconductor layer 12 and the first electrodes 311 and the second electrodes 312.

[0039] 1, 2, and 4, each of the multiple first electrodes 311 is surrounded by a cutout portion 21 of the surface protective film 20. As shown in FIGS. 1 and 3, each of the multiple first electrodes 311 is housed in an opening portion 22 of the surface protective film 20 as viewed in the thickness direction z. Therefore, each of the multiple first electrodes 311 communicates with the outside of the semiconductor element A10 through the opening of the cutout portion 21 as viewed in the thickness direction z. Any of the multiple first electrodes 311 corresponds to an "electrode" as defined in the claims of the present invention.

[0040] As shown in Fig. 5, each of the multiple barrier films 32 is interposed between the wiring layer 14 of the element body 10 and any one of the multiple first electrodes 311 and the multiple second electrodes 312 in the thickness direction z. The multiple barrier films 32 are in contact with both the second wiring layer 142 of the wiring layer 14 and the passivation film 15 of the element body 10. The barrier film 32 is conductive. The constituent material of the barrier film 32 is titanium nitride (TiN). Therefore, the composition of the barrier film 32 contains titanium.

[0041] As shown in FIGS. 1 to 6 (except for FIG. 5), the semiconductor substrate 11 of the element body 10 is provided with dam portions 111 protruding from the side surfaces 10C in a direction perpendicular to the thickness direction z. As viewed in the thickness direction z, the dam portions 111 are located near the openings of the cutout portions 21 of the surface protective film 20. In the semiconductor element A10, the dam portions 111 are provided in both the pair of first regions 101C of the side surfaces 10C and the pair of second regions 102C of the side surfaces 10C. Therefore, as viewed in the thickness direction z, the dam portions 111 are frame-shaped and located around the entire periphery of the element body 10.

[0042] As shown in FIGS. 2 to 6 (except for FIG. 5), the dam portion 111 has a top surface 111A and a bottom surface 111B. The top surface 111A faces the side in the thickness direction z where the front surface 10A of the element body 10 faces. The top surface 111A is a concave curved surface. The bottom surface 111B faces the opposite side to the top surface 111A. In the semiconductor element A10, the bottom surface 111B is flush with the back surface 10B of the element body 10 (semiconductor substrate 11). The minimum height h1 of the dam portion 111 from the bottom surface 111B to the outer edge of the top surface 111A (the minimum dimension of the dam portion 111 in the thickness direction z) is preferably 50 μm or more.

[0043] Next, a method for forming the dam portion 111 of the semiconductor element A10 will be described with reference to FIGS.

[0044] 7, a semiconductor layer 12 is laminated on a semiconductor substrate 11, and then a passivation film 15, a surface protective film 20, and a plurality of first electrodes 311 are disposed on a surface 10A of the semiconductor layer 12. In this process, a plurality of cutout portions 21 are formed in the surface protective film 20.

[0045] 8, a first blade 81 having a width b1 is used to remove a portion of each of the semiconductor substrate 11, the semiconductor layer 12, and the passivation film 15 to form a plurality of grooves 83. The plurality of grooves 83 are formed from the side in the thickness direction z toward the front surface 10A of the semiconductor layer 12 toward the rear surface 10B of the semiconductor substrate 11. The plurality of grooves 83 are formed in a checkerboard pattern along both the first direction x and the second direction y.

[0046] 9, the semiconductor substrate 11 is cut by a second blade 82 having a width b2. The width b2 is smaller than the width b1 of the first blade 81. In cutting, the second blade 82 is passed through each of the multiple grooves 83, and then the second blade 82 is moved in the thickness direction z. This process results in a semiconductor element A10 in which a dam portion 111 is formed.

[0047] <Modifications of Semiconductor Element A10> A semiconductor element A11, which is a modification of the semiconductor element A10, will be described with reference to Figures 10 to 12. The semiconductor element A11 differs from the previously described semiconductor element A10 in the configurations of the surface protection film 20 and the dam portion 111.

[0048] As shown in FIG. 10, all of the multiple cutouts 21 of the surface protection film 20 are open in the second direction y when viewed in the thickness direction z.

[0049] 10 to 12, in the semiconductor element A11, the dam portions 111 are provided in a pair of second regions 102C of the side surface 10C. Therefore, as viewed in the thickness direction z, the dam portions 111 extend along the first direction x. In other words, as viewed in the thickness direction z, the dam portions 111 extend along a direction perpendicular to the thickness direction z.

[0050] <Semiconductor device B10> The semiconductor device B10 will be described with reference to Figs. 13 to 19. The semiconductor device B10 shown in these figures includes a die pad 41, a plurality of terminals 42, a bonding layer 50, a plurality of wires 60, and a sealing resin 70. The semiconductor device B10 is, for example, an operational amplifier. The semiconductor device B10 is used in various circuits such as an amplifier circuit, a comparator, an integrator circuit, and an oscillator circuit. As shown in Fig. 13, in the example shown by the semiconductor device B10, the structural form of the device is an SOP (Single Outline Package). Note that the structural form of the semiconductor device B10 is not limited to an SOP. Note that Fig. 13 shows the sealing resin 70 through the semiconductor device 70 for ease of understanding. The sealing resin 70 through the semiconductor device 70 in Fig. 13 is shown by an imaginary line (two-dot chain line).

[0051] As shown in Fig. 14, Fig. 17, and Fig. 18, the die pad 41 is a conductive member on which a semiconductor element A10 is mounted. The die pad 41 is composed of the same lead frame together with a plurality of terminals 42. The constituent material of the lead frame is, for example, copper or a copper alloy. As shown in Fig. 14 and Fig. 18, the die pad 41 has a main body portion 411 and a pair of hanging portions 412.

[0052] 14, the main body 411 has a rectangular shape when viewed in the thickness direction z. The semiconductor element A10 is mounted on the main body 411. The surface of the main body 411 is plated with, for example, silver (Ag).

[0053] As shown in FIG. 14 and FIG. 18, the pair of hanging parts 412 are connected to both sides of the main body part 411 in the first direction x. The pair of hanging parts 412 are strip-shaped extending in the first direction x. The pair of hanging parts 412 are support members of the main body part 411 with respect to the lead frame. As shown in FIG. 16, each of the pair of hanging parts 412 has an end face 412A facing the first direction x. The pair of end faces 412A are exposed from the sealing resin 70. The die pad 41 is covered with the sealing resin 70 except for the pair of end faces 412A.

[0054] 14, the multiple terminals 42 are conductive members arranged away from the die pad 41. In the example shown in the semiconductor device B10, four terminals 42 are arranged on each of one side and the other side of the die pad 41 in the second direction y. These terminals 42 are arranged along the first direction x. Each of the multiple terminals 42 has a pad portion 421 and an exposed portion 422.

[0055] As shown in Figs. 14 and 17, the pad portion 421 is covered with the sealing resin 70. The surface of the pad portion 421 is plated with, for example, silver. As shown in Figs. 14 to 17, the exposed portion 422 is exposed from the sealing resin 70. When viewed in the thickness direction z, the exposed portion 422 extends in the first direction x from the pad portion 421. As shown in Figs. 16 and 17, the exposed portion 422 is bent in a crank shape when viewed in the second direction y. The exposed portion 422 is used when mounting the semiconductor device B10 on a wiring board. The surface of the exposed portion 422 is plated with, for example, tin (Sn).

[0056] As shown in Figs. 17 to 19, the bonding layer 50 includes a portion interposed between the body portion 411 of the die pad 41 and the back surface 10B of the element body 10 of the semiconductor element A10. The bonding layer 50 contains silver particles. The constituent material of the bonding layer 50 is, for example, an epoxy resin containing silver particles. A portion of the bonding layer 50 adheres to the dam portion 111 of the semiconductor element A10.

[0057] 14 and 17, the wires 60 are individually connected to the first electrodes 311 and the second electrodes 312 of the semiconductor element A10 and to the pad portions 421 of the terminals 42. As a result, the first electrodes 311 and the second electrodes 312 are electrically connected to the terminals 42. The wires 60 are made of a material such as gold.

[0058] 17 and 18, the sealing resin 70 covers the semiconductor element A10, the bonding layer 50, the wires 60, and parts of the die pad 41 and the terminals 42. The sealing resin 70 is made of, for example, a black epoxy resin. The sealing resin 70 has a main surface 71, a back surface 72, a pair of first side surfaces 731, and a pair of second side surfaces 732.

[0059] 17 and 18, the main surface 71 faces the side in the thickness direction z where the front surface 10A of the element body 10 faces. As shown in Fig. 17 and 18, the back surface 72 faces the opposite side to the main surface 71. When the semiconductor device B10 is mounted on a wiring board, the back surface 72 faces the wiring board.

[0060] 14 to 17, the pair of first side surfaces 731 are spaced apart from each other in the second direction y. Each of the pair of first side surfaces 731 is connected to the main surface 71 and the back surface 72 on both sides in the thickness direction z. From each of the pair of first side surfaces 731, the exposed portions 422 of the multiple terminals 42 are exposed.

[0061] 14 to 18 (except for FIG. 17), the pair of second side surfaces 732 are spaced apart from each other in the first direction x. Each of the pair of second side surfaces 732 is connected to the main surface 71 and the back surface 72 on both sides in the thickness direction z. Each of the pair of second side surfaces 732 is connected to the pair of first side surfaces 731 on both sides in the second direction y. End surfaces 412A of the pair of hanging portions 412 of the die pad 41 are exposed from the pair of second side surfaces 732.

[0062] Next, the effects of the semiconductor element A10 and the semiconductor device B10 will be described.

[0063] The semiconductor element A10 includes an element body 10 having a surface 10A and a side surface 10C, and a surface protective film 20 disposed on the surface 10A. The surface protective film 20 has a notch 21 recessed inward from the periphery as viewed in the thickness direction z. The first electrode 311 of the semiconductor element A10, which is electrically connected to the element body 10, is surrounded by the notch 21. The element body 10 is provided with a dam portion 111 protruding from the side surface 10C in a direction perpendicular to the thickness direction z. As viewed in the thickness direction z, the dam portion 111 is located near the opening of the notch 21. As a result, as shown in FIG. 19, the dam portion 111 can prevent the bonding layer 50 from creeping up the side surface 10C due to capillary action in the semiconductor device B10. Therefore, according to the semiconductor element A10, it is possible to prevent the bonding layer 50 from reaching the first electrode 311 in the semiconductor device B10.

[0064] Providing the dam portion 111 on the element body 10 increases the surface area of ​​the element body 10. This increases the adhesion area of ​​the bonding layer 50 to the element body 10 in the semiconductor device B10, thereby increasing the bonding strength of the semiconductor element A10 to the die pad 41.

[0065] The constituent material of the surface protection film 20 includes polyimide. Even in such a case, since the surface protection film 20 has the cutout portion 21, it is possible to prevent a short circuit of the first electrode 311 due to ion migration of silver contained in the bonding layer 50 in the semiconductor device B10.

[0066] The constituent material of the first electrode 311 contains gold. This increases the bonding strength of the wire 60 to the first electrode 311 in the semiconductor device B10. This makes it possible to improve the reliability of the semiconductor device B10.

[0067] The dam portion 111 has a top surface 111A facing the side in the thickness direction z toward the front surface 10A. The top surface 111A is a curved surface. This is a trace of a groove 83 formed by a first blade 81 in the manufacturing process of the semiconductor device A10 shown in FIG.

[0068] When viewed in the thickness direction z, the dam portion 111 is positioned around the entire periphery of the element body 10. This makes it possible to more effectively prevent the bonding layer 50 from creeping up the side surface 10C due to capillary action in the semiconductor device B10.

[0069] The semiconductor element A10 further includes a barrier film 32 interposed between the wiring layer 14 and the first electrode 311 in the thickness direction z. The barrier film 32 contains titanium. This allows the first electrode 311 to make ohmic contact with the wiring layer 14. In addition, the metal component contained in the first electrode 311 can be prevented from diffusing into the element body 10.

[0070] Second Embodiment A semiconductor element A20 according to a second embodiment of the present invention and a semiconductor device B20 including the semiconductor element A20 will be described with reference to Figures 20 to 30. In these figures, elements that are the same as or similar to the semiconductor element A10 and semiconductor device B10 described above are given the same reference numerals and redundant description will be omitted.

[0071] <Semiconductor element A20> The semiconductor element A20 will be described with reference to Figures 20 to 23. In the semiconductor element A20, the configuration of the dam portion 111 is different from that of the semiconductor element A10 described above.

[0072] 21 to 23, in the thickness direction z, the bottom surface 111B of the dam portion 111 is spaced from the back surface 10B of the element body 10 (semiconductor substrate 11) toward the front surface 10A of the element body 10 (semiconductor layer 12). Note that, as shown in FIG. 20, the shape of the semiconductor element A20 viewed in the thickness direction z is the same as the shape of the semiconductor element A10. The bottom surface 111B is a concave curved surface. The minimum height h2 of the dam portion 111 from the inner edge of the bottom surface 111B to the outer edge of the top surface 111A (the minimum dimension of the dam portion 111 in the thickness direction z) is preferably 50 μm or more.

[0073] In the semiconductor element A20, similarly to the semiconductor element A11 described above, the dam portions 111 may be configured to extend along one direction perpendicular to the thickness direction z when viewed in the thickness direction z.

[0074] Next, as shown in FIGS. 24 to 26, a method for forming the dam portion 111 of the semiconductor element A20 will be described.

[0075] First, as shown in Fig. 24, a first blade 81 having a width b1 is used to remove a portion of each of the semiconductor substrate 11, the semiconductor layer 12, and the passivation film 15 from the semiconductor substrate 11 and the semiconductor layer 12 shown in Fig. 7, thereby forming a plurality of first grooves 831. The plurality of first grooves 831 are formed from the side in the thickness direction z toward the front surface 10A of the semiconductor layer 12 toward the rear surface 10B of the semiconductor substrate 11. The plurality of first grooves 831 are formed in a checkerboard pattern along both the first direction x and the second direction y.

[0076] 25, a first blade 81 is used to remove a portion of the semiconductor substrate 11 to form a plurality of second grooves 832. The plurality of second grooves 832 are formed from the side of the semiconductor substrate 11 facing the back surface 10B in the thickness direction z toward the front surface 10A of the semiconductor layer 12. The plurality of second grooves 832 are also formed to form a checkerboard pattern corresponding to the plurality of second grooves 832.

[0077] 26, the semiconductor substrate 11 is cut by a second blade 82 having a width b2. The width b2 is smaller than the width b1 of the first blade 81. In cutting, the second blade 82 is caused to pass through each of the multiple first grooves 831, and then the second blade 82 is moved in the thickness direction z to reach the second groove 832 corresponding to the first groove 831. By this process, a semiconductor element A20 in which a dam portion 111 is formed is obtained.

[0078] <Semiconductor device B20> The semiconductor device B20 will be described with reference to Fig. 27 to Fig. 30. In the semiconductor device B20, the configuration of the semiconductor element A20 is different from that of the semiconductor device B10 described above. As shown in Fig. 27, the mounting position of the semiconductor element A20 with respect to the die pad 41 is the same as the mounting position of the semiconductor element A10 in the semiconductor device B10.

[0079] 28 and 29, a part of the bonding layer 50 is attached to the dam portion 111 of the semiconductor element A20. As shown in FIG.

[0080] Next, the effects of the semiconductor element A20 and the semiconductor device B20 will be described.

[0081] The semiconductor element A20 includes an element body 10 having a surface 10A and a side surface 10C, and a surface protective film 20 disposed on the surface 10A. The surface protective film 20 has a notch 21 recessed inward from the periphery as viewed in the thickness direction z. The first electrode 311 of the semiconductor element A20, which is electrically connected to the element body 10, is surrounded by the notch 21. The element body 10 is provided with a dam portion 111 protruding from the side surface 10C in a direction perpendicular to the thickness direction z. As viewed in the thickness direction z, the dam portion 111 is located near the opening of the notch 21. As a result, as shown in FIG. 30, the dam portion 111 can prevent the bonding layer 50 from creeping up the side surface 10C due to capillary action in the semiconductor device B20. Therefore, the semiconductor element A20 can also prevent the bonding layer 50 from reaching the first electrode 311 in the semiconductor device B20.

[0082] The bottom surface 111B of the dam portion 111 of the semiconductor element A20 is spaced from the back surface 10B of the element body 10 (semiconductor substrate 11) toward the front surface 10A of the element body 10 (semiconductor layer 12). This provides an anchor effect in the portion of the bonding layer 50 in contact with the bottom surface 111B in the semiconductor device B20, thereby increasing the bonding strength of the semiconductor element A20 to the die pad 41.

[0083] Top surface 111A of dam portion 111 is curved. This is a trace of first groove 831 formed by first blade 81 in the manufacturing process of semiconductor device A20 shown in Fig. 24. Bottom surface 111B of dam portion 111 is curved. This is a trace of second groove 832 formed by first blade 81 in the manufacturing process of semiconductor device A20 shown in Fig. 25.

[0084] The present invention is not limited to the above-described embodiment, and the specific configuration of each part of the present invention can be freely designed in various ways. [Explanation of symbols]

[0085] A10, A11, A20: Semiconductor elements B10, B20: Semiconductor device 10: Element body 10A: Surface 10B: Back side 10C: Side 101C, 102C: 1st area, 2nd area 11: Semiconductor substrate 111: Weir 111A:Top surface 111B: Bottom 12: Semiconductor layer 13: Interlayer insulating film 14: Wiring layer 141,142: 1st wiring layer, 2nd wiring layer 15: Passivation film 15A:Aperture 151,152: 1st film, 2nd film 20: Surface protective film 21: Notch 22: Opening 311,312: 1st electrode, 2nd electrode 32: Barrier membrane 41: Die pad 411: Main body 412: Hanging part 412A: End face 42: Terminal 421: Pad section 422:Exposed part 50: Bonding layer 60: Wire 70: Sealing resin 71: Main surface 72: Back side 731,732: 1st side, 2nd side 81, 82: 1st blade, 2nd blade 83: Groove 831,832: 1st groove, 2nd groove z: thickness direction x: 1st direction y: second direction

Claims

1. An element body having a surface facing a thickness direction and a side surface facing a direction perpendicular to the thickness direction and connected to the surface; a surface protection film disposed on the surface and having a notch recessed in a direction perpendicular to the thickness direction; an electrode disposed on the surface in a first cross section including the thickness direction as an in-plane direction, surrounded by the notch, and electrically connected to the element body; The element body is provided with a dam portion protruding from the side surface in a direction perpendicular to the thickness direction, When viewed in the thickness direction, the dam portion is located near an opening of the notch portion, A semiconductor element, wherein in the first cross section, the electrode is away from the side surface, on the opposite side to the side on which the dam portion is located, with the side surface as a reference.

2. The semiconductor device according to claim 1 , wherein the surface protection film is made of a material containing polyimide.

3. The semiconductor device according to claim 2 , wherein the electrodes are made of a material containing gold.

4. the element body includes a semiconductor substrate, a semiconductor layer having the surface and stacked on the semiconductor substrate, the semiconductor layer being electrically connected to the electrode, and a passivation film disposed on the semiconductor layer; the surface protection film is in contact with the passivation film, The semiconductor element according to claim 3 , wherein the dam portion is provided on the semiconductor substrate.

5. the semiconductor substrate has a back surface facing opposite the front surface, The dam portion has a top surface facing the side to which the front surface faces in the thickness direction, and a bottom surface facing the opposite side to the top surface, The semiconductor device of claim 4 , wherein the bottom surface is flush with the back surface.

6. The semiconductor device of claim 5 , wherein the top surface is a concave curved surface.

7. the semiconductor substrate has a back surface facing opposite the front surface, The dam portion has a top surface facing the side to which the front surface faces in the thickness direction, and a bottom surface facing the opposite side to the top surface, The semiconductor element according to claim 4 , wherein the bottom surface is spaced from the back surface toward the front surface in the thickness direction.

8. The semiconductor device of claim 7 , wherein the top surface is a concave curved surface.

9. The semiconductor device according to claim 8 , wherein the bottom surface is a concave curved surface.

10. The semiconductor element according to claim 5 , wherein the dam portion extends along a direction perpendicular to the thickness direction when viewed in the thickness direction.

11. The semiconductor element according to claim 5 , wherein the dam portion is positioned along the entire periphery of the element body when viewed in the thickness direction.

12. the element body includes a wiring layer that is electrically connected to both the semiconductor layer and the electrode, The semiconductor element according to claim 10 , wherein the wiring layer is in contact with the passivation film.

13. a barrier film interposed between the wiring layer and the electrode in the thickness direction; The semiconductor device according to claim 12 , wherein the composition of the barrier film includes titanium.

14. A semiconductor element according to any one of claims 5 to 13, a die pad on which the semiconductor element is mounted; a bonding layer including a portion interposed between the die pad and the back surface, The semiconductor device, wherein the bonding layer contains silver particles.

15. a terminal disposed apart from the die pad; The semiconductor device according to claim 14 , further comprising a wire connected to the terminal and the electrode.

16. The semiconductor device according to claim 15 , further comprising a sealing resin that covers the semiconductor element and the wires.

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