Plating method and plating apparatus

Abstract

A plating method according to one embodiment of the present disclosure comprises a preparation step, a plating liquid formation step, and a plating step. In the preparation step, a substrate is prepared. In the plating liquid formation step, a plating liquid (M) is formed by mixing a first chemical liquid (L1) that contains metal ions, a reducing agent and a complexing agent with a second chemical liquid (L2) that is mainly composed of a pH regulator. In the plating step, the substrate is subjected to electroless plating with use of the thus-formed plating liquid (M) immediately after the plating liquid formation step.

Description

[Technical field]

[0001] The present disclosure relates to a plating method and a plating apparatus. [Background technology]

[0002] Conventionally, a method for forming multilayer wiring on a semiconductor wafer (hereinafter referred to as a wafer) serving as a substrate is known in which electroless plating is performed using the metal wiring exposed at the bottom of a via as a catalyst, thereby filling the inside of the via with metal (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2019 / 163531 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of suppressing deterioration of a plating solution used in an electroless plating process. [Means for solving the problem]

[0005] A plating method according to one embodiment of the present disclosure includes a preparation step, a plating solution generation step, and a plating step. The preparation step is to prepare a substrate. The plating solution generation step is to generate a plating solution by mixing a first chemical solution containing metal ions, a reducing agent, and a complexing agent with a second chemical solution mainly containing a pH adjuster. The plating step is to perform an electroless plating process on the substrate using the generated plating solution immediately after the plating solution generation step. Effect of the Invention

[0006] According to the present disclosure, deterioration of a plating solution used in an electroless plating process can be suppressed. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic plan view showing the configuration of a substrate processing system according to an embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view showing the configuration of a plating unit according to an embodiment. [Diagram 3] FIG. 3 is a schematic cross-sectional view showing the configuration of a heat treatment unit according to the embodiment. [Figure 4] FIG. 4 is an enlarged cross-sectional view showing the state of the wafer surface before plating according to the embodiment. [Diagram 5] FIG. 5 is a diagram for explaining the plating method according to the embodiment. [Figure 6] FIG. 6 is an enlarged cross-sectional view showing the state of the wafer surface after plating according to the embodiment. [Figure 7] FIG. 7 is a diagram for explaining a plating method according to the first modified example of the embodiment. [Figure 8] FIG. 8 is a diagram for explaining a plating method according to the first modification of the embodiment. [Figure 9] FIG. 9 is a diagram for explaining a plating method according to the second modification of the embodiment. [Figure 10] FIG. 10 is a flowchart showing a processing procedure in the plating process according to the embodiment. [Figure 11] FIG. 11 is a flowchart showing another procedure of the plating process according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, with reference to the attached drawings, an embodiment of the plating method and plating apparatus disclosed in the present application will be described in detail. Note that the present disclosure is not limited to the following embodiment. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from the reality. Furthermore, the drawings may include parts with different dimensional relationships and ratios.

[0009] Conventionally, a method for forming multilayer wiring on a semiconductor wafer (hereinafter referred to as a wafer) serving as a substrate is known in which electroless plating is performed using the metal wiring exposed at the bottom of a via as a catalyst to fill the inside of the via with metal.

[0010] Furthermore, with the recent trend toward finer multilayer wiring, the area of ​​metal wiring exposed at the bottom of the via is gradually shrinking, making it necessary to increase the activity of the plating solution in order to effectively fill the inside of the via with electroless plating.

[0011] On the other hand, if the activity of the plating solution is increased, the reaction between the metal ions and the reducing agent in the stored plating solution will continue even during standby, which may cause the plating solution to deteriorate before the electroless plating process is performed.

[0012] Therefore, there is a need for a technology that can overcome the above-mentioned problems and suppress the deterioration of the plating solution used in the electroless plating process.

[0013] <Outline of the substrate processing system> First, a schematic configuration of a substrate processing system 1 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic plan view showing the configuration of the substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a plating processing apparatus.

[0014] In the following, in order to clarify the positional relationships, an X-axis, a Y-axis, and a Z-axis that are perpendicular to each other are defined, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0015] 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0016] The carry-in / out station 2 includes a carrier placement section 11 and a transport section 12. A plurality of carriers C, each of which horizontally accommodates a plurality of semiconductor wafers W (hereinafter referred to as wafers W), are placed on the carrier placement section 11. The wafers W are an example of a substrate.

[0017] The transfer section 12 is provided adjacent to the carrier placement section 11, and includes therein a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism.

[0018] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15, a plurality of plating processing units 16, and a plurality of heat treatment units 17.

[0019] The plurality of plating units 16 and the plurality of heat treatment units 17 are arranged side by side on both sides of the transport section 15. Note that the arrangement and the number of the plating units 16 and the heat treatment units 17 shown in FIG. 1 are merely an example and are not limited to those shown in the figure.

[0020] The transfer section 15 includes therein a substrate transfer device 18. The substrate transfer device 18 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 18 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14, the plating processing unit 16, and the heat treatment unit 17 using the wafer holding mechanism.

[0021] The plating unit 16 performs a given electroless plating process on the wafer W transferred by the substrate transfer device 18. An example of the configuration of the plating unit 16 will be described later.

[0022] The heat treatment unit 17 performs a given heat treatment on the wafer W transferred by the substrate transfer device 18. An example of the configuration of the heat treatment unit 17 will be described later.

[0023] The substrate processing system 1 further includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 5 and a storage unit 6.

[0024] The control unit 5 includes a microcomputer having a central processing unit (CPU), a read only memory (ROM), a random access memory (RAM), input / output ports, and various other circuits.

[0025] The CPU of the microcomputer reads out and executes programs stored in the ROM to realize control of the transport unit 12, the transport unit 15, the plating unit 16, the heat treatment unit 17, and the like.

[0026] Such a program may be recorded in a computer-readable storage medium and installed from that storage medium into the storage unit 6 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

[0027] The storage unit 6 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

[0028] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 removes the wafer W from the carrier C placed on the carrier placement section 11, and places the removed wafer W on the transfer section 14. The wafer W placed on the transfer section 14 is then removed from the transfer section 14 by the substrate transfer device 18 in the processing station 3, and carried into the plating processing unit 16.

[0029] The wafer W carried into the plating unit 16 is subjected to a given electroless plating process by the plating unit 16, and then carried out of the plating unit 16 by the substrate transfer device 18 and carried into the heat treatment unit 17.

[0030] The wafer W carried into the heat treatment unit 17 is subjected to a given heat treatment by the heat treatment unit 17, and then carried out of the heat treatment unit 17 by the substrate transfer device 18 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C of the carrier placement section 11 by the substrate transfer device 13.

[0031] <Overview of Plating Unit> Next, a schematic configuration of the plating unit 16 will be described with reference to Fig. 2. Fig. 2 is a schematic cross-sectional view showing the configuration of the plating unit 16 according to an embodiment. The plating unit 16 is configured as, for example, a single-wafer processing unit that processes wafers W one by one.

[0032] As shown in FIG. 2, the plating unit 16 includes a housing 30, a substrate holder 31, a chemical supply unit 32, a cup 33, and liquid discharge units 34 and 35.

[0033] The substrate holding unit 31 rotates and holds the wafer W inside the housing 30. The substrate holding unit 31 has a rotation shaft 31a, a turntable 31b, a wafer chuck 31c, and a rotation mechanism (not shown).

[0034] The rotating shaft 31a is hollow and cylindrical, and extends vertically within the housing 30. The turntable 31b is attached to the upper end of the rotating shaft 31a. The wafer chuck 31c is provided on the outer periphery of the upper surface of the turntable 31b, and supports the wafer W.

[0035] The substrate holding unit 31 is controlled by the control unit 5 of the control device 4, and the rotation shaft 31a is rotated by the rotation mechanism, thereby rotating the wafer W supported by the wafer chuck 31c.

[0036] The chemical liquid supply unit 32 supplies a given chemical liquid to the surface of the wafer W held by the substrate holding unit 31. The chemical liquid supply unit 32 includes a first supply unit 32a1 that supplies a first chemical liquid L1 (see FIG. 5) to the surface of the wafer W, and a second supply unit 32a2 that supplies a second chemical liquid L2 (see FIG. 5) to the surface of the wafer W.

[0037] The first chemical solution L1 according to the embodiment contains metal ions, a reducing agent, and a complexing agent. The metal ions contained in the first chemical solution L1 include, for example, cobalt (Co) ions, nickel (Ni) ions, tungsten (W) ions, copper (Cu) ions, palladium (Pd) ions, and gold (Au) ions.

[0038] The reducing agent contained in the first chemical solution L1 is, for example, hydrazine, glyoxylic acid, EDTA (ethylenediaminetetraacetic acid), dimethylamine borane, etc. The complexing agent contained in the first chemical solution L1 may be any agent capable of forming a complex with a metal ion, and may be, for example, citric acid or sodium citrate when the metal ion is a cobalt ion.

[0039] The second chemical liquid L2 according to the embodiment is a chemical liquid mainly composed of a pH adjuster. In this disclosure, "mainly composed of a pH adjuster" means that the pH adjuster is contained in an amount of 80% or more by volume.

[0040] The pH adjuster according to the embodiment is a chemical liquid that adjusts the pH of the first chemical liquid L1 so that the pH is increased, and is, for example, a highly alkaline aqueous solution of TMAH (TetraMethylAmmonium Hydroxide) or sodium hydroxide.

[0041] The first supply section 32a1 is provided with a heater 32b1 that heats the first chemical liquid L1 supplied to the wafer W to a given temperature, and the second supply section 32a2 is provided with a heater 32b2 that heats the second chemical liquid L2 supplied to the wafer W to a given temperature.

[0042] Further, the chemical liquid supply unit 32 has a nozzle head 32c, to which a first nozzle 32d1 and a second nozzle 32d2 are attached. The first nozzle 32d1 is a nozzle corresponding to the first supply unit 32a1, and the second nozzle 32d2 is a nozzle corresponding to the second supply unit 32a2.

[0043] The nozzle head 32c is attached to the tip of an arm 32e. The arm 32e is movable in the vertical direction and is fixed to a support shaft 32f that is rotated by a rotation mechanism (not shown) so as to be rotatable.

[0044] With this configuration, the chemical liquid supply unit 32 can discharge the first chemical liquid L1 and the second chemical liquid L2 from a desired height to any location on the surface of the wafer W via the first nozzle 32d1 and the second nozzle 32d2.

[0045] Although not shown in FIG. 2, the chemical liquid supply unit 32 may be provided with a separate cleaning liquid supply unit that supplies a given cleaning liquid to the wafer W.

[0046] Cup 33 receives the processing liquid splashed from wafer W. Cup 33 has two discharge ports 33a and 33b and is configured to be movable up and down by a lifting mechanism (not shown). The two discharge ports 33a and 33b are connected to liquid discharge units 34 and 35, respectively.

[0047] The liquid discharge units 34 and 35 discharge the treatment liquid collected in the discharge ports 33a and 33b, respectively. The liquid discharge unit 34 has a recovery flow path 34b and a waste flow path 34c that are switched by a flow path switch 34a. The recovery flow path 34b is, for example, a flow path for recovering and reusing the chemical liquid, and the waste flow path 34c is a flow path for disposing of the chemical liquid.

[0048] Furthermore, when the recovered chemical liquid is a plating liquid M (see FIG. 5), a cooling buffer 34d is provided on the outlet side of the recovery flow path 34b for cooling the plating liquid M. Note that the liquid discharge section 35 is provided with only a waste flow path 35a.

[0049] <Overview of the heat treatment unit> Next, a schematic configuration of the heat treatment unit 17 will be described with reference to Fig. 3. Fig. 3 is a schematic cross-sectional view showing the configuration of the heat treatment unit 17 according to the embodiment. The heat treatment unit 17 is configured as, for example, a single-wafer processing unit that processes wafers W one by one.

[0050] 3, the heat treatment unit 17 includes a sealable housing 17a and a hot plate 17b disposed inside the housing 17a. The housing 17a is provided with a transfer port (not shown) for loading and unloading the wafer W, a gas supply port 17c for supplying a given atmospheric gas into the housing 17a, and a gas exhaust port 17d for exhausting the atmospheric gas from the housing 17a.

[0051] Then, the wafer W is loaded through the transfer port and placed on the hot plate 17b, and the given heat treatment can be performed on the wafer W by raising the temperature of the hot plate 17b to a given temperature while supplying an atmospheric gas corresponding to each heat treatment.

[0052] <Embodiment> Next, details of the plating process according to the embodiment will be described with reference to Fig. 4 to Fig. 6. Fig. 4 is an enlarged cross-sectional view showing the state of the surface of the wafer W before the plating process according to the embodiment.

[0053] 4, elements (not shown) have already been formed. In the wiring formation process (so-called BEOL (Back End of Line)) after the element formation, various processes for filling the vias 70 formed in the insulating film 60 on the wiring 50 with metal wiring will be described below.

[0054] 4, metal wiring 50 is formed on the wafer W, and an insulating film 60 is provided on the wiring 50. In the embodiment, for example, the entire insulating film 60 is made of an oxide film.

[0055] The wiring 50 according to the embodiment is made of an element that does not diffuse inside the insulating film 60, which is an oxide film. The wiring 50 is made of a conductive material containing, for example, Co, Ni, or Ru.

[0056] Furthermore, in the wafer W, a via 70 is formed at a given position in the insulating film 60. The via 70 is formed so as to penetrate from the upper surface 61 of the insulating film 60 to the wiring 50. The via 70 includes a bottom surface 71 where the wiring 50 is exposed, and a side surface 72.

[0057] Here, a method of forming the vias 70 in the insulating film 60 of the wafer W can be appropriately adopted from conventionally known methods. Specifically, for example, a general-purpose technique using a fluorine-based or chlorine-based gas can be applied as a dry etching technique.

[0058] In particular, as a method for forming a via 70 with a large aspect ratio (ratio of depth to diameter), an ICP-RIE (Inductively Coupled Plasma Reactive Ion Etching) technique capable of high-speed deep etching can be adopted.

[0059] For example, the so-called Bosch process, in which an etching step using sulfur hexafluoride (SF6) and a protection step using a gas such as C4F8 are repeatedly performed, can be suitably adopted.

[0060] As shown in FIG. 4, the wafer W in which the vias 70 are formed in the insulating film 60 on the wiring 50 is carried into the above-mentioned plating unit 16, where a given electroless plating process is performed.

[0061] Fig. 5 is a diagram for explaining a plating method according to an embodiment. As shown in Fig. 5, in the plating method according to the embodiment, the control unit 5 (see Fig. 1) controls the chemical liquid supply unit 32 to discharge a first chemical liquid L1 from a first nozzle 32d1 onto the surface of the wafer W, and to discharge a second chemical liquid L2 from a second nozzle 32d2.

[0062] As a result, the control unit 5 mixes the first chemical liquid L1 and the second chemical liquid L2 on the surface of the wafer W to generate a plating liquid M. Then, immediately after the plating liquid M is generated, the control unit 5 uses the plating liquid M to perform an electroless plating process on the vias 70 (see FIG. 4).

[0063] In this disclosure, the phrase "immediately after the plating solution M is produced" refers to any period from the production of the plating solution M until the deterioration of the plating solution M progresses.

[0064] 6, this electroless plating process uses the wiring 50 exposed at the bottom surface 71 of the via 70 as a catalyst to form an electroless plating film 80 from the bottom up from the bottom surface 71 of the via 70, and the inside of the via 70 is filled with the electroless plating film 80. Fig. 6 is an enlarged cross-sectional view showing the state of the surface of the wafer W after the plating process according to the embodiment.

[0065] In this manner, in the embodiment, the wiring 50 exposed at the bottom surface 71 is used as a catalyst to form the electroless plating film 80 from the bottom surface 71 in a bottom-up manner, and the inside of the via 70 is filled with the electroless plating film 80. This makes it possible to form good metal wiring that does not include voids or seams inside the via 70, which has a large aspect ratio and is difficult to form metal wiring in.

[0066] In this embodiment, the first chemical liquid L1, which is a raw material of the plating solution M, does not contain a pH adjuster, and therefore the pH in the first chemical liquid L1 is controlled to suppress the reaction between the metal ions and the reducing agent (i.e., low activity). The first chemical liquid L1 according to the embodiment has a pH of, for example, about 11 to 12.

[0067] In the embodiment, the second chemical liquid L2, which contains a pH adjuster as a main component, is mixed with the first chemical liquid L1 to adjust the pH of the first chemical liquid L1 so that the pH of the first chemical liquid L1 is increased. This promotes the reaction between the metal ions and the reducing agent in the plating solution M produced by mixing the first chemical liquid L1 and the second chemical liquid L2.

[0068] In this manner, in the embodiment, the reaction between the metal ions and the reducing agent in the stored first chemical liquid L1 can be prevented from progressing even during standby, and the activity of the plating liquid M can be increased during plating processing of the wafer W.

[0069] That is, in the embodiment, by mixing the first chemical liquid L1 and the second chemical liquid L2 to generate the plating solution M immediately before the plating process, deterioration of the plating solution M used in the electroless plating process can be suppressed.

[0070] In the embodiment, the metal ions and the reducing agent are mixed in advance in the first chemical liquid L1, which makes it possible to increase the activity of the generated plating solution M compared to a case where the metal ions and the reducing agent are mixed to generate the plating solution M immediately before the electroless plating process.

[0071] Therefore, according to the embodiment, even if the vias 70 are miniaturized, the insides of the vias 70 can be satisfactorily filled by electroless plating.

[0072] The present disclosure is not limited to the case where the first chemical liquid L1 in which metal ions and a reducing agent are mixed in advance is stored in the substrate processing system 1 and used.

[0073] For example, in the present disclosure, a third chemical liquid (not shown) containing metal ions and a fourth chemical liquid (not shown) containing a reducing agent may be mixed in a first supply section 32a1 (see FIG. 2) upstream of the first nozzle 32d1 to generate the first chemical liquid L1.

[0074] This makes it possible to suppress the reaction between the metal ions and the reducing agent in the first chemical liquid L1, thereby increasing the activity of the plating solution M produced using the first chemical liquid L1.

[0075] In the embodiment, the second chemical liquid L2 mainly composed of a highly alkaline aqueous solution may be used to adjust the pH of the first chemical liquid L1 to be higher. This makes it easier to manage the first chemical liquid L1 compared to the case where the second chemical liquid L2 mainly composed of an acidic aqueous solution is used to adjust the pH of the first chemical liquid L1, which has a very high pH, ​​to be lower.

[0076] Therefore, according to the embodiment, the electroless plating process can be easily carried out.

[0077] In the embodiment, the second chemical liquid L2 mainly containing a pH adjuster may be composed of a highly alkaline aqueous solution and unavoidable impurities, which makes it easier to manage the second chemical liquid L2 and facilitates the electroless plating process.

[0078] In addition, the present disclosure is not limited to the case where the second chemical liquid L2 is composed of a highly alkaline aqueous solution and unavoidable impurities, and for example, the highly alkaline aqueous solution, which is the main component, may contain metal ions, a reducing agent, a complexing agent, etc.

[0079] In the embodiment, the first nozzle 32d1 and the second nozzle 32d2 simultaneously discharge the first chemical liquid L1 and the second chemical liquid L2 onto the wafer W to generate the plating liquid M on the surface of the wafer W. This allows the electroless plating process of the wafer W to be performed immediately after the plating liquid M is generated.

[0080] Therefore, according to the embodiment, since the electroless plating process can be performed before the plating solution M deteriorates, even if the via 70 is miniaturized, the inside of the via 70 can be filled well with the electroless plating process.

[0081] In addition, in an embodiment, the plating solution M may be generated after raising the temperature of at least one of the first chemical liquid L1 and the second chemical liquid L2 to a temperature higher than room temperature (for example, 40 (°C) to 70 (°C)).

[0082] This allows the electroless plating process to be performed using plating solution M at a temperature higher than room temperature, so that even if the vias 70 are miniaturized, the insides of the vias 70 can be filled more effectively with the electroless plating process.

[0083] After the electroless plating process described above is completed, the wafer W on which the electroless plating film 80 is formed is subjected to a given cleaning process in the plating process unit 16. This cleaning process is performed, for example, by discharging a given cleaning solution onto the wafer W while spinning the wafer W. This removes the plating solution M and the like adhering to the surface of the wafer W.

[0084] Then, the wafer W after the cleaning process is carried into the above-mentioned heat treatment unit 17, where a given heat treatment is performed. For example, the heat treatment is performed by heating the hot plate 17b on which the wafer W is placed in a forming gas atmosphere in which nitrogen gas and hydrogen gas are mixed at a given ratio, thereby raising the temperature of the wafer W to a given temperature (for example, 400° C.).

[0085] In this way, by performing heat treatment on electroless plating film 80, electroless plating film 80 can be crystallized, thereby reducing the electrical resistance of the metal wiring formed inside via 70.

[0086] By carrying out the various processes described above, in this embodiment, the interior of the via 70 having a large aspect ratio can be filled with good quality metal wiring.

[0087] In the embodiment described above, an example has been shown in which the first chemical liquid L1 and the second chemical liquid L2 are mixed on the surface of the wafer W to generate the plating liquid M. However, the present disclosure is not limited to such an example, and for example, the plating liquid M may be generated by mixing the first chemical liquid L1 and the second chemical liquid L2 above the wafer W (i.e., before the discharged first chemical liquid L1 and second chemical liquid L2 reach the wafer W).

[0088] <Variation 1> Next, various modified examples of the embodiment will be described with reference to Fig. 7 to Fig. 9. Fig. 7 and Fig. 8 are diagrams for explaining a plating method according to Modification 1 of the embodiment.

[0089] 7, in Modification 1, the control unit 5 (see FIG. 1) controls the chemical liquid supply unit 32 to discharge the second chemical liquid L2 from the second nozzle 32d2. As a result, the control unit 5 forms a liquid film of the second chemical liquid L2 on the surface of the wafer W.

[0090] 8, the control unit 5 (see FIG. 1) controls the chemical liquid supply unit 32 to discharge the first chemical liquid L1 from the first nozzle 32d1. As a result, the control unit 5 mixes the discharged first chemical liquid L1 with the liquid film of the second chemical liquid L2 on the surface of the wafer W to generate a plating liquid M.

[0091] Then, the control unit 5 performs an electroless plating process on the vias 70 (see FIG. 4) using the generated plating solution M. As a result, an electroless plating film 80 (see FIG. 6) is formed in the vias 70.

[0092] In the variant example 1 described so far, as in the above-mentioned embodiment, the reaction between the metal ions and the reducing agent in the stored first chemical liquid L1 can be prevented from progressing even during standby, and the activity of the plating liquid M can be increased during plating processing of the wafer W.

[0093] Therefore, according to the first modification, deterioration of the plating solution M used in the electroless plating process can be suppressed.

[0094] Furthermore, in variant example 1, since the electroless plating process can be performed before the highly active plating solution M deteriorates, even if the vias 70 are miniaturized, the insides of the vias 70 can be satisfactorily filled with the electroless plating process.

[0095] In the examples of Figures 7 and 8, an example is shown in which the first chemical liquid L1 is ejected onto a wafer W on which a liquid film of the second chemical liquid L2 has been formed, but the present disclosure is not limited to such an example, and for example, the second chemical liquid L2 may be ejected onto a wafer W on which a liquid film of the first chemical liquid L1 has been formed.

[0096] <Variation 2> 9 is a diagram for explaining a plating method according to Modification 2 of the embodiment. In Modification 2 shown in FIG. 9, the configuration of a chemical solution supply unit 32 is different from that of the embodiment and Modification 1 described above.

[0097] Specifically, the chemical liquid supply unit 32 according to the second modification has a mixing nozzle 32d3 instead of the first nozzle 32d1 and the second nozzle 32d2. A first supply unit 32a1 that supplies a first chemical liquid L1 (see FIG. 5) and a second supply unit 32a2 that supplies a second chemical liquid L2 (see FIG. 5) are connected to the mixing nozzle 32d3.

[0098] In the second modification, the control unit 5 (see FIG. 1) controls the chemical liquid supply unit 32 to mix the first chemical liquid L1 and the second chemical liquid L2 in the mixing nozzle 32d3 to generate the plating liquid M. The control unit 5 also discharges the plating liquid M generated in the mixing nozzle 32d3 onto the surface of the wafer W.

[0099] In this variant example 2, as in the above-described embodiment, the reaction between the metal ions and the reducing agent in the stored first chemical liquid L1 can be prevented from progressing even during standby, and the activity of the plating liquid M can be increased during plating processing of the wafer W.

[0100] Therefore, according to the second modification, deterioration of the plating solution M used in the electroless plating process can be suppressed.

[0101] Furthermore, in variant example 2, since the electroless plating process can be performed before the highly active plating solution M deteriorates, even if the vias 70 are miniaturized, the insides of the vias 70 can be satisfactorily filled with the electroless plating process.

[0102] The plating processing apparatus (substrate processing system 1) according to the embodiment includes a substrate holding unit 31 that holds a substrate (wafer W), a chemical solution supply unit 32 that supplies a chemical solution to the substrate (wafer W), and a control unit 5 that controls each unit. The control unit 5 holds the substrate (wafer W) with the substrate holding unit 31. The control unit 5 controls the chemical solution supply unit 32 to mix a first chemical solution L1 containing metal ions, a reducing agent, and a complexing agent with a second chemical solution L2 containing a pH adjuster as a main component to generate a plating solution M. The control unit 5 performs plating processing on the substrate (wafer W) using the generated plating solution M immediately after generating the plating solution M. This makes it possible to suppress deterioration of the plating solution M used in the electroless plating processing.

[0103] <Plating process details> Next, the plating process performed by the substrate processing system 1 according to the embodiment will be described in detail with reference to Figures 10 and 11. Figure 10 is a flowchart showing the procedure of the plating process according to the embodiment.

[0104] First, the control unit 5 controls the substrate transfer devices 13 and 18 to transfer the wafer W from the carrier C into the plating unit 16, and prepares the wafer W by holding the wafer W on the substrate holding unit 31 (step S101).

[0105] Next, the control unit 5 controls the chemical liquid supply unit 32 to simultaneously eject the first chemical liquid L1 and the second chemical liquid L2 onto the surface of the wafer W, thereby mixing the first chemical liquid L1 and the second chemical liquid L2 and generating a plating liquid M (step S102).

[0106] Then, immediately after the plating solution M is produced, the control unit 5 performs an electroless plating process on the vias 70 using the plating solution M (step S103). Furthermore, the control unit 5 controls the chemical solution supply unit 32 to perform a given cleaning process on the wafer W that has been subjected to the electroless plating process (step S104).

[0107] Next, the control unit 5 controls the substrate transfer device 18 to transfer the wafer W that has been subjected to the electroless plating process from the plating unit 16 to the heat treatment unit 17, and the wafer W is subjected to a given heat treatment in the heat treatment unit 17 (step S105). This completes the series of processes.

[0108] 11 is a flowchart showing another procedure of the plating process according to the embodiment. First, the control unit 5 controls the substrate transfer devices 13 and 18 to transfer the wafer W from the carrier C to the inside of the plating process unit 16, and prepares the wafer W by holding the wafer W on the substrate holding unit 31 (step S201).

[0109] Next, the control unit 5 controls the chemical liquid supply unit 32 to mix the third chemical liquid containing metal ions and the fourth chemical liquid containing a reducing agent in the first supply unit 32a1 upstream of the first nozzle 32d1 to generate the first chemical liquid L1 (step S202).

[0110] Next, the control unit 5 controls the chemical liquid supply unit 32 to simultaneously eject the first chemical liquid L1 and the second chemical liquid L2 generated in the processing of step S202 onto the surface of the wafer W, thereby mixing the first chemical liquid L1 and the second chemical liquid L2 and generating a plating liquid M (step S203).

[0111] Then, immediately after the plating solution M is produced, the control unit 5 performs an electroless plating process on the vias 70 using the plating solution M (step S204). Furthermore, the control unit 5 controls the chemical solution supply unit 32 to perform a given cleaning process on the wafer W that has been subjected to the electroless plating process (step S205).

[0112] Next, the control unit 5 controls the substrate transfer device 18 to transfer the wafer W that has been subjected to the electroless plating process from the plating unit 16 to the heat treatment unit 17, and the wafer W is subjected to a given heat treatment in the heat treatment unit 17 (step S206). This completes the series of processes.

[0113] The plating method according to the embodiment includes a preparation step (steps S101, S201), a plating solution generation step (steps S102, S203), and a plating step (steps S103, S204). In the preparation step (steps S101, S201), a substrate (wafer W) is prepared. In the plating solution generation step (steps S102, S203), a first chemical solution L1 containing metal ions, a reducing agent, and a complexing agent is mixed with a second chemical solution L2 containing a pH adjuster as a main component to generate a plating solution M. In the plating step (steps S103, S204), immediately after the plating solution generation step (steps S102, S203), an electroless plating process is performed on the substrate (wafer W) using the generated plating solution M. This makes it possible to suppress deterioration of the plating solution M used in the electroless plating process.

[0114] In the plating method according to the embodiment, the plating solution generating step (steps S102, S203) discharges the first chemical liquid L1 onto the substrate (wafer W) from the first nozzle 32d1. The plating solution generating step (steps S102, S203) is also performed by discharging the second chemical liquid L2 onto the substrate (wafer W) from the second nozzle 32d2 and mixing the first chemical liquid L1 and the second chemical liquid L2 on the substrate (wafer W). This allows the interior of the via 70 to be satisfactorily filled by electroless plating even if the via 70 is miniaturized.

[0115] In the plating method according to the embodiment, the plating solution generating step (steps S102, S203) is performed by discharging the first chemical liquid L1 onto the substrate (wafer W) on which a liquid film of the second chemical liquid L2 has been formed. This allows the interior of the via 70 to be satisfactorily filled by electroless plating even if the via 70 is miniaturized.

[0116] In the plating method according to the embodiment, the plating solution generating step (steps S102, S203) is performed by mixing the first chemical liquid L1 and the second chemical liquid L2 in the mixing nozzle 32d3. This allows the interior of the via 70 to be satisfactorily filled by the electroless plating process even if the via 70 is miniaturized.

[0117] In the plating method according to the embodiment, the pH of the second chemical liquid L2 is adjusted so as to increase the pH of the first chemical liquid L1, thereby making it possible to easily carry out the electroless plating process.

[0118] In the plating method according to the embodiment, the second chemical liquid L2 contains a highly alkaline aqueous solution and unavoidable impurities, which makes it possible to easily carry out the electroless plating process.

[0119] In the plating method according to the embodiment, the plating solution generating step (steps S102 and S203) is performed after heating at least one of the first chemical liquid L1 and the second chemical liquid L2 to a temperature higher than room temperature. This allows the interior of the via 70 to be filled more satisfactorily by the electroless plating process even if the via 70 is miniaturized.

[0120] The plating method according to the embodiment further includes a first chemical solution generating step (step S202) which is performed before the plating solution generating step (steps S102 and S203) and which generates the first chemical solution L1 by mixing a third chemical solution containing metal ions with a fourth chemical solution containing a reducing agent. This makes it possible to increase the activity of the plating solution M generated using the first chemical solution L1.

[0121] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present disclosure.

[0122] The disclosed embodiments should be considered to be illustrative and not restrictive in all respects. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0123] 1. Substrate processing system (an example of a plating processing device) 5. Control section 16 Plating processing unit 31 Board holding part 32 Chemical supply section 32d1 No. 1 nozzle 32d2 Second nozzle 32d3 Mixing nozzle L1 First chemical solution L2 Second liquid medicine M Plating Solution W wafer (example of substrate)

Claims

1. A preparation step of preparing a substrate; a plating solution generating step of mixing a first chemical solution containing metal ions, a reducing agent, and a complexing agent with a second chemical solution containing 80% by volume or more of an alkaline aqueous solution, which is an aqueous solution having alkaline properties, to generate a plating solution; a plating process step of performing an electroless plating process on the substrate using the plating solution generated in the plating solution generation step immediately after the plating solution is generated; A plating method comprising the steps of:

2. The plating solution generating step is performed by discharging the first chemical solution onto the substrate from a first nozzle and discharging the second chemical solution onto the substrate from a second nozzle, thereby mixing the first chemical solution and the second chemical solution on the substrate. The plating method according to claim 1 .

3. The plating solution generating step is performed by discharging the first chemical onto the substrate on which the liquid film of the second chemical has been formed. The plating method according to claim 1 .

4. The plating solution generating step is performed by mixing the first chemical solution and the second chemical solution in a mixing nozzle. The plating method according to claim 1 .

5. The second chemical liquid adjusts the pH so that the pH of the first chemical liquid becomes higher. The plating method according to any one of claims 1 to 4.

6. The second chemical solution is composed of the alkaline aqueous solution and unavoidable impurities. The plating method according to claim 5.

7. The plating solution generating step is performed after heating at least one of the first chemical solution and the second chemical solution to a temperature higher than room temperature. The plating method according to any one of claims 1 to 6.

8. The method further includes a first chemical solution generating step, which is performed before the plating solution generating step, of mixing a third chemical solution containing the metal ions with a fourth chemical solution containing the reducing agent to generate the first chemical solution. The plating method according to any one of claims 1 to 7.

9. A substrate holder for holding a substrate; A chemical supply unit that supplies a chemical to the substrate; A control unit for controlling each unit; Equipped with The control unit is The substrate is held by the substrate holder; The chemical supply unit is controlled to mix a first chemical solution containing metal ions, a reducing agent, and a complexing agent with a second chemical solution containing 80% by volume or more of an alkaline aqueous solution, which is an aqueous solution having alkaline properties, to generate a plating solution; Immediately after the plating solution is produced, electroless plating is performed on the substrate using the produced plating solution. Plating processing equipment.

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