SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To provide a technology that can suppress adhesion of a film onto the inside of a vacuum pump.SOLUTION: A substrate treatment apparatus is an apparatus for performing deposition on a substrate arranged in a treatment vessel, and includes: a treatment gas feeding unit for feeding, into the treatment vessel, treatment gas containing raw material gas and carrier gas for conveying the raw material gas; a vacuum pump for exhausting the inside of the treatment vessel; and a purge gas feeding unit for feeding purge gas into the vacuum pump. The purge gas contains first gas which is the same gas as the carrier gas.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] In order to prevent corrosion and deposition of films inside a turbomolecular pump, a technique is known in which an inert gas is introduced into the exhaust system while the pump is in operation (see, for example, Patent Document 1). 12 A technique for forming a Ru film by supplying a gas into a processing chamber is known (see, for example, Patent Document 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Utility Model Application Publication No. 4-59393 [Patent Document 2] JP 2008-244298 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can suppress adhesion of a film to the inside of a vacuum pump. [Means for solving the problem]

[0005] A substrate processing apparatus according to an aspect of the present disclosure is an apparatus for forming a film on a substrate disposed in a processing vessel, the apparatus including: a processing gas supply unit that supplies a processing gas containing a source gas and a carrier gas that transports the source gas into the processing vessel; a vacuum pump that evacuates the processing vessel; and a purge gas supply unit that supplies a purge gas into the vacuum pump, the purge gas containing a first gas that is the same as the carrier gas. The raw material gas is Ru 3 (CO) 12 gas, and the carrier gas and the first gas are CO gas. . Effect of the Invention

[0006] According to the present disclosure, adhesion of film to the inside of a vacuum pump can be suppressed. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic diagram illustrating an example of a substrate processing apparatus according to an embodiment; [Diagram 2] FIG. 1 is a schematic cross-sectional view showing an example of a turbomolecular pump according to an embodiment. [Diagram 3] FIG. 1 is a diagram showing an example of a substrate processing method according to an embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all of the accompanying drawings, the same or corresponding members or parts are designated by the same or corresponding reference numerals, and duplicated descriptions will be omitted.

[0009] [Substrate Processing Apparatus] An example of a substrate processing apparatus according to an embodiment will be described with reference to Fig. 1. In the following, a film forming apparatus that forms a ruthenium (Ru) film by a chemical vapor deposition (CVD) method will be described as an example of the substrate processing apparatus.

[0010] The film forming apparatus 1 includes a processing section 10, a processing gas supply section 20, an exhaust section 30, and a control section 90.

[0011] The processing section 10 performs a film formation process to form a Ru film on a substrate W. The substrate W may be, for example, a semiconductor wafer. The processing section 10 includes a processing vessel 11 and a mounting table 12. The inside of the processing vessel 11 is depressurized by an exhaust section 30. The mounting table 12 is provided in the processing vessel 11. The mounting table 12 holds the substrate in the processing vessel 11.

[0012] The process gas supply unit 20 supplies Ru3(CO), which is an example of a source gas. 12The processing gas supply unit 20 supplies a gas to the processing unit 10. The processing gas supply unit 20 includes a source container 21, a gas introduction line 22, a bubbling gas line 23, and a flow rate controller 24. The source container 21 contains Ru3(CO) 12 The bubbling gas line 23 supplies carbon monoxide (CO) gas, the flow rate of which is controlled by a flow rate controller 24, to the source material container 21. As a result, Ru3(CO) 12 is vaporized, Ru3(CO) 12 A gas is supplied into the processing chamber 11 through a gas introduction line 22. The processing gas supply unit 20 also includes a carrier gas line 25 and a flow rate controller 26. The carrier gas line 25 supplies CO gas, which is an example of a carrier gas whose flow rate is controlled by the flow rate controller 26, to the gas introduction line 22, and supplies Ru3(CO) 12 The processing gas supply unit 20 transports the gas into the processing vessel 11. The processing gas supply unit 20 also includes a purge line 27 and a flow rate controller 28. The purge line 27 supplies an inert gas, such as argon (Ar), whose flow rate is controlled by the flow rate controller 28, into the processing vessel 11 via the gas introduction line 22.

[0013] The exhaust unit 30 exhausts the inside of the processing vessel 11. The exhaust unit 30 includes an exhaust line 31, a pressure control valve 32, a turbo molecular pump 33, a valve 34, and a dry pump 35. The pressure control valve 32, the turbo molecular pump 33, the valve 34, and the dry pump 35 are disposed in the exhaust line 31 in this order from the processing vessel 11 side. The exhaust unit 30 also includes a bypass line 36 that connects between the processing vessel 11 and the pressure control valve 32 in the exhaust line 31 and between the valve 34 and the dry pump 35 in the exhaust line 31 and bypasses the turbo molecular pump 33. The bypass line 36 is used when the inside of the processing vessel 11 is roughly evacuated by the dry pump 35. A valve 37 is disposed in the bypass line 36. The exhaust unit 30 also includes a purge gas supply unit 38. The purge gas supply unit 38 supplies a purge gas into the turbo molecular pump 33. The purge gas supply unit 38 includes a CO gas line 38a and an N2 gas line 38b. The CO gas line 38a supplies CO gas into the turbo molecular pump 33. The N2 gas line 38b supplies N2 gas into the turbo molecular pump 33. Valves 38c and 38d are respectively provided in the CO gas line 38a and the N2 gas line. By opening the valve 38c and closing the valve 38d, CO gas is supplied from the CO gas line 38a to the turbo molecular pump 33. On the other hand, by closing the valve 38c and opening the valve 38d, N2 gas is supplied from the N2 gas line 38b to the turbo molecular pump 33.

[0014] The control unit 90 executes a substrate processing method of an embodiment described below by controlling the processing unit 10, the processing gas supply unit 20, and the exhaust unit 30. The control unit 90 may be, for example, a computer.

[0015] [Turbo molecular pump] An example of a turbo molecular pump (TMP) according to an embodiment will be described with reference to Fig. 2. A turbo molecular pump 100 described below can be applied as the turbo molecular pump 33 of the film forming apparatus 1 described above.

[0016] The turbomolecular pump 100 includes a casing 101, a base 102, a motor housing 103, bearings 104 and 105, a shaft 106, a rotor 107, a pump mechanism 108, an oil tank 109, an intake flange 110, an exhaust flange 111, and a purge gas supply unit 120.

[0017] The casing 101 is a cylindrical body and houses a motor housing 103 and the like.

[0018] The base 102 supports the casing 101 .

[0019] The motor housing 103 is provided in the casing 101, and is fixed onto the base 102. The motor housing 103 accommodates a motor M that drives a shaft 106 to rotate.

[0020] The bearings 104 and 105 are provided in the motor housing 103 and the base 102, respectively. The bearings 104 and 105 form a pair. The bearings 104 and 105 may be, for example, ball bearings or magnetic bearings.

[0021] The shaft 106 is supported near both ends by bearings 104 and 105 .

[0022] The rotor 107 is fixed to the shaft 106 so as to be rotatable together with the shaft 106, and accommodates the motor housing 103 inside an inner periphery 107a.

[0023] The pump mechanism 108 includes a turbine 108a and a screw rotor portion 108b. The turbine 108a and the screw rotor portion 108b are provided between an outer periphery 107b of the rotor 107 and an inner periphery 101a of the casing 101. The turbine 108a is formed by alternately arranging rotor blades 107c protruding from the rotor 107 and fixed blades 101b protruding from the inner periphery 101a of the casing 101. The screw rotor portion 108b is formed by inserting the blades 101c protruding from the inner periphery 101a of the casing 101 into a spiral groove 107d formed on the outer periphery of the lower end of the rotor 107 in a non-contact and close contact manner.

[0024] The oil tank 109 is attached to the bottom of the base 102 .

[0025] The intake flange 110 is fixed to the upper end of the casing 101. The intake flange 110 includes an intake port 110a for drawing in gas.

[0026] The exhaust flange 111 is fixed to the bottom of the base 102. The exhaust flange 111 includes an exhaust port 111a that exhausts gas drawn in from the intake port 110a.

[0027] The purge gas supply unit 120 supplies purge gas into the motor housing 103. In one embodiment, the purge gas supply unit 120 supplies purge gas from below to above along the outer circumference of the shaft 106 (see arrow F in FIG. 2). The purge gas supply unit 120 includes a CO gas supply unit 121 and an N2 gas supply unit 122.

[0028] The CO gas supply unit 121 includes a CO gas supply source 121a, a gas line 121b, a flow rate controller 121c, a valve 121d, etc. The CO gas supply unit 121 supplies CO gas from the CO gas supply source 121a into the motor housing 103 by controlling the flow rate using the flow rate controller 121c.

[0029] The N2 gas supply unit 122 includes an N2 gas supply source 122a, a gas line 122b, a flow rate controller 122c, a valve 122d, etc. The N2 gas supply unit 122 supplies N2 gas from the N2 gas supply source 122a into the motor housing 103 by controlling the flow rate by the flow rate controller 122c.

[0030] The purge gas supply unit 120 switches the purge gas to be supplied into the motor housing 103 between CO gas and N 2 gas by controlling the opening and closing of valves 121d and 122d.

[0031] The turbo molecular pump 100 described above compresses gas sucked in through the intake port 110a by the pump mechanism 108 and forcibly exhausts the gas toward the exhaust port 111a.

[0032] 2, the purge gas supply unit 120 supplies the purge gas into the motor housing 103, but the present invention is not limited to this. The purge gas supply unit 120 may supply the purge gas to another location in the turbo molecular pump 100.

[0033] [Substrate Processing Method] An example of the substrate processing method of the embodiment will be described with reference to Fig. 3. In the following, an example will be described in which a Ru film is formed on a substrate W in the above-mentioned film forming apparatus 1. It should be noted that, at the start of the substrate processing method described below, the valve 38c is closed and the valve 38d is open. In other words, at the start of the substrate processing method, N2 gas is supplied as a purge gas into the turbo molecular pump 33.

[0034] In step S1, the control unit 90 controls each part of the film forming apparatus 1 to load the substrate W into the processing chamber 11 and place the substrate W on the mounting table 12.

[0035] Step S2 is performed after step S1. However, step S2 may be performed before step S1 or simultaneously with step S1. In step S2, the control unit 90 switches the purge gas supplied to the turbomolecular pump 33 from N2 gas to CO gas. In one embodiment, the control unit 90 closes the valve 38d to stop the supply of N2 gas into the turbomolecular pump 33, and opens the valve 38c to start the supply of CO gas into the turbomolecular pump 33.

[0036] Step S3 is performed after step S2. However, step S3 may be performed simultaneously with step S2. In step S3, the control unit 90 controls each unit of the film formation apparatus 1 to perform a film formation process on the substrate W placed on the mounting table 12 in the processing chamber 11. In one embodiment, the control unit 90 controls the processing gas supply unit 20 to supply Ru3(CO) 12 By supplying the gas together with the CO gas, a Ru film is deposited on the substrate W. In addition, the Ru3(CO) gas supplied into the processing vessel 11 is 12 A part of the gas is not used in the film formation process and is exhausted by the turbo molecular pump 33. At this time, since CO gas is supplied as a purge gas into the turbo molecular pump 33, Ru3(CO) 12 The gas is exhausted together with the CO gas.

[0037] Step S4 is performed after step S3. In step S4, the control unit 90 determines whether the film formation process has been completed. If it is determined in step S4 that the film formation process has been completed, the control unit 90 advances the process to step S5. On the other hand, if it is determined in step S4 that the film formation process has not been completed, the control unit 90 performs step S4 again.

[0038] Step S5 is performed after step S4. In step S5, the control unit 90 switches the purge gas supplied into the turbomolecular pump 33 from CO gas to N2 gas. In one embodiment, the control unit 90 closes the valve 38c to stop the supply of CO gas into the turbomolecular pump 33, and opens the valve 38d to start the supply of N2 gas into the turbomolecular pump 33. In this way, by switching the purge gas from CO gas to N2 gas after the film formation process is completed, the consumption of CO gas can be reduced, thereby reducing costs.

[0039] Step S6 is performed after step S5. However, step S6 may be performed simultaneously with step S5, or may be performed before step S5. In step S6, the control unit 90 controls each part of the film forming apparatus 1 to unload the substrate W, which is placed on the mounting table 12 and has been subjected to the film forming process, from the processing vessel 11. Thereafter, the control unit 90 ends the process.

[0040] By the way, Ru3(CO) 12 The compound decomposes according to the reaction shown in the following formula (A) to cause deposition of metallic Ru.

[0041] Ru3(CO) 12 →3Ru+12CO (A)

[0042] The reaction represented by formula (A) proceeds more rapidly as the partial pressure of CO in the atmosphere decreases. Therefore, during the film formation process, Ru3(CO) 12 When a part of the gas is exhausted by the exhaust unit 30 without reacting in the processing vessel 11, it may decompose in the turbo molecular pump 33 and downstream piping, etc., and deposit as a Ru film. This is considered to be because the CO concentration in the atmosphere is reduced by the N2 gas supplied as a purge gas into the turbo molecular pump 33.

[0043] In contrast, according to the substrate processing method of the embodiment, the purge gas supplied to the turbo molecular pump 33 is switched from N2 gas to CO gas before the start of the film formation process. 12Even if a part of the gas is exhausted by the exhaust unit 30 without reacting in the processing vessel 11, it is possible to suppress a decrease in the CO concentration in the atmosphere in the turbo molecular pump 33 and downstream piping. Therefore, the Ru3(CO) 12 This suppresses the decomposition reaction of Ru, and thus makes it possible to suppress the deposition of a Ru film in the turbo molecular pump 33 and on the piping downstream thereof.

[0044] In addition, during the film formation process, Ru3(CO) 12 It is preferable to supply CO gas into the turbo molecular pump 33 so that the partial pressure ratio of the gas to the CO gas is 1:49 or more. This makes it possible to particularly suppress the deposition of a Ru film in the turbo molecular pump 33 and on the piping downstream thereof, and to prevent the generation of particles.

[0045] In the above embodiment, the CO gas is an example of the first gas, and the N2 gas is an example of the second gas. The turbo molecular pumps 33 and 100 are examples of the vacuum pump, and the valves 38c, 38d, 121d, and 122d are examples of the gas switching unit. The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0046] In the above embodiment, a case has been described in which CO gas and N2 gas are supplied into the turbo molecular pump 33, but the present disclosure is not limited to this. For example, another inert gas such as Ar gas may be used instead of N2 gas. [Explanation of symbols]

[0047] 1 Film deposition equipment 10 Processing section 11 Processing vessel 20 Processing gas supply section 30 Exhaust section 33,100 Turbomolecular pump 38,120 Purge gas supply unit W substrate

Claims

1. An apparatus for forming a film on a substrate placed in a processing chamber, comprising: a process gas supply unit that supplies a process gas containing a source gas and a carrier gas that carries the source gas into the process vessel; a vacuum pump for evacuating the processing chamber; a purge gas supply unit that supplies a purge gas into the vacuum pump; having the purge gas includes a first gas that is the same gas as the carrier gas; The raw material gas is Ru 3 (CO) 12 gas, The carrier gas and the first gas are CO gas. Substrate processing equipment.

2. The purge gas includes a second gas different from the first gas. The substrate processing apparatus according to claim 1 .

3. the purge gas supply unit includes a gas switching unit that switches between a state in which the first gas is supplied into the vacuum pump and a state in which the second gas is supplied into the vacuum pump. The substrate processing apparatus according to claim 2 .

4. The control unit further includes: the control unit is configured to control the purge gas supply unit to supply the first gas into the vacuum pump when the processing gas is supplied from the processing gas supply unit into the processing vessel. The substrate processing apparatus according to claim 2 or 3.

5. The control unit further includes: the control unit is configured to control the purge gas supply unit to supply the second gas into the vacuum pump when the processing gas is not supplied from the processing gas supply unit into the processing vessel. The substrate processing apparatus according to claim 2 .

6. The second gas is an inert gas. The substrate processing apparatus according to claim 2 .

7. the vacuum pump is a turbomolecular pump, The purge gas supply unit supplies the purge gas along a shaft of the turbomolecular pump. The substrate processing apparatus according to claim 1 .

8. the purge gas supply unit supplies the purge gas into the vacuum pump so that a partial pressure ratio of the source gas to the first gas is 1:49 or more. The substrate processing apparatus according to claim 1 .

9. A method for forming a film on a substrate placed in a processing chamber, comprising the steps of: supplying a process gas including a source gas and a carrier gas for carrying the source gas into the process vessel while evacuating the inside of the process vessel with a vacuum pump; In the step of supplying the process gas, a purge gas containing a first gas, which is the same gas as the carrier gas, is supplied into the vacuum pump; The raw material gas is Ru 3 (CO) 12 gas, The carrier gas and the first gas are CO gas. A method for processing a substrate.

Images