Processing device and processing method

Abstract

To provide a technique that can adjust the interplanar uniformity of gas supply to a substrate.SOLUTION: A processing apparatus includes: a processing container having a substantially cylindrical shape; an injector provided to extend in a longitudinal direction along the inner side of an inner wall of the processing container and including a plurality of introduction ports into which a processing gas is introduced and a plurality of gas holes from which the processing gas introduced from the plurality of introduction ports is ejected into the processing container; and a controller configured to change a flow rate ratio of the processing gas to be introduced into the injector from the plurality of introduction ports.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a processing apparatus and a processing method. [Background technology]

[0002] There is known a gas processing apparatus including a processing vessel that houses a boat on which substrates are loaded, and a gas pipe that extends vertically along the inner wall of the processing vessel near the processing vessel and has multiple gas ejection holes in the longitudinal direction (see, for example, Patent Document 1). In Patent Document 1, the gas pipe is provided with two gas inlets, and the gases flowing in from the respective gas inlets collide with each other midway through the flow path in the gas pipe, thereby making the ejection pressure of the gas ejected through the multiple gas ejection holes uniform at each gas ejection hole. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-196839 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can adjust the inter-surface uniformity of gas supply to a substrate. [Means for solving the problem]

[0005] A processing apparatus according to an aspect of the present disclosure includes a processing vessel having a substantially cylindrical shape, an injector extending in a longitudinal direction along an inner side of an inner wall of the processing vessel, the injector having a plurality of introduction ports through which a processing gas is introduced and a plurality of gas holes through which the processing gas introduced from the plurality of introduction ports is discharged into the processing vessel, and a control unit that changes a flow rate ratio of the processing gas introduced from the plurality of introduction ports into the injector. The control unit changes the flow rate ratio during a film forming process for depositing films on a plurality of substrates. . Effect of the Invention

[0006] According to the present disclosure, the inter-surface uniformity of gas supply to a substrate can be adjusted. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic diagram illustrating an example of a processing apparatus according to an embodiment; [Diagram 2] FIG. 2 illustrates an example of an injector for the processing device of FIG. 1. [Diagram 3] FIG. 2 shows a first modified example of the injector of the processing device of FIG. 1. [Figure 4] FIG. 2 shows a second modified example of the injector of the processing device of FIG. 1. [Diagram 5] FIG. 2 shows a third modified example of the injector of the processing device of FIG. 1. [Figure 6] Figure 3 shows the results of an analysis of the mole fraction of SiH2 when the injector in Figure 2 (inner diameter: 13.5 mm) was used. [Figure 7] Figure 3 shows the analysis results of the mass flow rate when the injector in Figure 2 (inner diameter: 13.5 mm) is used. [Figure 8] A diagram showing the results of an analysis of the mole fraction of SiH2 when the injector in Figure 3 is used. [Figure 9] A graph showing the results of mass flow analysis when the injector in Figure 3 is used. [Figure 10] Figure 3 shows the results of an analysis of the mole fraction of SiH2 when the injector in Figure 2 (inner diameter: 5.4 mm) was used. [Figure 11] Figure 3 shows the analysis results of the mass flow rate when the injector in Figure 2 (inner diameter: 5.4 mm) is used. [Figure 12] A diagram showing the results of an analysis of the mole fraction of SiH2 when the injector in Figure 4 is used. [Figure 13] A graph showing the results of mass flow analysis when the injector in Figure 4 is used. [Figure 14] Figure showing the results of an analysis of the mole fraction of SiH2 when N2 is added to Si2H6 [Figure 15] Figure showing the results of an analysis of the mole fraction of SiH2 when N2 is added to Si2H6 [Figure 16] Figure showing the results of analyzing the mole fraction of SiH2 when the total flow rate of Si2H6 is changed. [Figure 17] Figure (1) shows the results of an analysis of the mole fraction of SiH2 when the gas hole diameter is changed. [Figure 18] Figure (2) shows the results of analyzing the mole fraction of SiH2 when the gas hole diameter is changed. [Figure 19] Figure (3) shows the results of an analysis of the mole fraction of SiH2 when the gas hole diameter is changed. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all of the accompanying drawings, the same or corresponding members or parts are designated by the same or corresponding reference numerals, and duplicated descriptions will be omitted.

[0009] [Processing Device] An example of a processing apparatus according to an embodiment will be described with reference to Fig. 1. The processing apparatus according to the embodiment is a batch-type vertical processing apparatus capable of simultaneously forming films on a plurality of substrates. The processing apparatus according to the embodiment is an apparatus for depositing a film on a substrate by, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0010] The processing apparatus 10 has a processing vessel 34 for accommodating a substrate W, and a lid 36 for closing an opening at the bottom end of the processing vessel 34 on the Z2 side. The substrate W is, for example, a semiconductor wafer such as a silicon wafer. The processing apparatus 10 further has a boat 38 that can be accommodated in the processing vessel 34 and holds a plurality of substrates W at predetermined intervals, a gas supply unit 40 that supplies gas into the processing vessel 34, and an exhaust unit 41 that exhausts gas from within the processing vessel 34. A heating unit 42 that heats the inside of the processing vessel 34 is provided outside the processing vessel 34.

[0011] The processing vessel 34 is formed of a substantially cylindrical inner tube 44 whose lower end on the Z2 side is open and has a ceiling portion 44A on the Z1 side, and a substantially cylindrical outer tube 46 whose lower end on the Z2 side is open and has a ceiling on the Z1 side covering the outside of the inner tube 44. The inner tube 44 and the outer tube 46 are formed of a heat-resistant material such as quartz, and are arranged coaxially along the Z1-Z2 direction to form a double tube structure.

[0012] The ceiling portion 44A of the inner pipe 44 is, for example, flat. A nozzle accommodating portion 48 that accommodates an injector 76, which will be described later, is formed inside the inner pipe 44 along the Z1-Z2 direction. A protruding portion 50 that protrudes outward in the X1 direction is formed in a part of the side wall of the inner pipe 44, and the inside of the formed protruding portion 50 may serve as the nozzle accommodating portion 48. A rectangular opening 52 having a predetermined width is formed in the Z1-Z2 direction in the side wall on the X2 side, which is the opposite side of the inner pipe 44 facing the nozzle accommodating portion 48.

[0013] The opening 52 is an exhaust port for exhausting the inside of the inner pipe 44. The length of the opening 52 in the Z1-Z2 direction is the same as or longer than the length of the boat 38. That is, the upper end of the opening 52 on the Z1 side is formed longer on the Z1 side than a position corresponding to the upper end of the boat 38, and the lower end of the opening 52 on the Z2 side is formed longer on the Z2 side than a position corresponding to the lower end of the boat 38.

[0014] The lower end of the processing vessel 34 on the Z2 side is supported by a substantially cylindrical manifold 54 made of, for example, stainless steel. A flange portion 56 is formed on the upper end of the manifold 54 on the Z1 side, and the lower end of the outer pipe 46 on the Z2 side is connected onto the flange portion 56. A seal member 58 such as an O-ring is provided between the flange portion 56 and the outer pipe 46, and the flange portion 56 and the outer pipe 46 are connected via the seal member 58. In this embodiment, the area surrounded by the processing vessel 34, the manifold 54, and the lid 36 inside the processing vessel 34 may be referred to as the inside of the processing vessel.

[0015] An annular support 60 is provided on the inner wall on the Z1 side, which is the upper part of the manifold 54, and the lower end of the inner tube 44 on the Z2 side is placed on the support 60 to support it. A lid 36 is attached to the opening of the lower end on the Z2 side of the manifold 54 via a seal member 62 such as an O-ring, and hermetically closes the opening of the lower end on the Z2 side of the processing vessel 34, i.e., the opening of the manifold 54. The lid 36 is made of, for example, stainless steel.

[0016] A rotating shaft 66 is provided in the center of the lid 36, penetrating through the magnetic fluid seal portion 64. The lower portion of the rotating shaft 66 on the Z2 side is rotatably supported by an arm 68A of an elevation portion 68 made up of a boat elevator.

[0017] A rotating plate 70 is provided at the upper end of the rotating shaft 66 on the Z1 side, and the boat 38 holding the substrates W is placed on the rotating plate 70 via a quartz heat retention stand 72. Therefore, by raising and lowering the arm 68A by the lifting unit 68, the lid body 36 and the boat 38 move vertically as a unit, and the boat 38 can be inserted into and removed from the processing vessel 34.

[0018] The gas supply unit 40 is provided in the manifold 54 and can supply a process gas to the inside of the inner tube 44. The process gas includes, for example, a source gas and an additive gas. The source gas is a gas for depositing a film on the substrate W, and may be, for example, a silicon-containing gas such as monosilane (SiH4) or disilane (Si2H6). The additive gas is a gas for diluting the source gas, and may be, for example, an inert gas such as nitrogen (N2) or argon (Ar). The gas supply unit 40 has one injector 76 made of quartz. However, the gas supply unit 40 may further have another injector.

[0019] The injector 76 has two upright portions 76a, 76b. The two upright portions 76a, 76b are connected by bending their ends in the Z1 direction toward each other, and their ends in the Z2 direction are bent in an L shape toward the X1 side, and penetrate the manifold 54 to be supported.

[0020] A plurality of gas holes 76c are formed at a predetermined interval in one upright portion 76a of the injector 76, and the process gas is discharged from each gas hole 76c in a substantially horizontal direction. The predetermined interval is, for example, the same as the interval between the substrates W supported by the boat 38. The position of each gas hole 76c in the upright portion 76a in the Z1-Z2 direction is located midway between adjacent substrates W in the Z1-Z2 direction, and the process gas can be efficiently supplied to the space between the substrates W. However, the predetermined interval between each gas hole 76c is not limited to the above. A gas hole 76c may be provided for each of a plurality of substrates W.

[0021] The position of each gas hole 76c is not limited to a midpoint between adjacent substrates W, and may be provided at any position, such as at the same height as the substrate W. Furthermore, the direction of each gas hole 76c may be toward the center of the substrate W, toward the outer periphery of the substrate W, or toward the inner tube 44, for example.

[0022] A substantially cylindrical heating unit 42 is provided on the outer periphery of the outer tube 46 so as to surround the periphery of the outer tube 46. The heating unit 42 can heat the substrate W accommodated in the processing vessel 34 and the gas within the upright portions 76a, 76b of the injector 76.

[0023] A process gas supply source GS is connected to one upright portion 76a of the injector 76 via a valve V1, a flow rate controller M1, and a valve V2. A process gas supply source GS is connected to the other upright portion 76b of the injector 76 via a valve V3, a flow rate controller M2, and a valve V4. That is, the upright portions 76a and 76b are connected to the same process gas supply source GS. However, the upright portion 76b may be connected to a process gas supply source different from that of the upright portion 76a.

[0024] In the injector 76, the processing gas from the processing gas supply source GS is introduced into the upright portions 76a, 76b via valves V1 to V4 under the control of flow rate controllers M1, M2, and is discharged into the inside of the inner tube 44 of the processing vessel 34 through multiple gas holes 76c provided in the upright portion 76a.

[0025] An exhaust port 82 is provided on the side wall on the Z1 side that constitutes the upper portion of manifold 54, above support portion 60, and gas inside inner tube 44 is exhausted from opening 52 via space 84 between inner tube 44 and outer tube 46. An exhaust unit 41 is connected to exhaust port 82. In exhaust unit 41, a pressure adjustment valve 88, an exhaust passage 86, and a vacuum pump 90 are provided in this order from exhaust port 82, and the inside of processing vessel 34 can be evacuated to a vacuum.

[0026] In this embodiment, a plurality of substrates W are placed inside the inner tube 44 along the Z1-Z2 direction perpendicular to the wafer surface, which is the substrate surface. Processing gas is discharged between the substrates W from a plurality of gas holes 76c formed in the upright portion 76a of the injector 76. The discharged processing gas passes between the substrates W to process the substrates W, but gas that does not contribute to the processing exits the inner tube 44 from the opening 52 on the X2 side, passes through a space 84 between the inner tube 44 and the outer tube 46, and is exhausted from the exhaust port 82.

[0027] The overall operation of the processing device 10 is controlled by a control unit 95 such as a computer. Furthermore, a computer program for performing the overall operation of the processing device 10 may be stored in a storage medium 96. The storage medium 96 may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0028] In this embodiment, while a predetermined process (e.g., a film formation process) is being performed on the substrate W, the control unit 95 controls the valves V1 to V4 and the flow rate controllers M1, M2 to change the flow rate ratio of the process gas introduced into the upright portion 76a and the process gas introduced into the upright portion 76b.

[0029] Incidentally, when the silicon-containing gas, which is the raw material gas, is introduced into the injector, it is heated by the heating unit while flowing from the upstream to the downstream in the injector. Therefore, the silicon-containing gas discharged from the gas hole located upstream of the gas flow and the silicon-containing gas discharged from the gas hole located downstream are heated for different times in the injector. As a result, the flow rate and the thermal decomposition rate are different between the silicon-containing gas discharged from the gas hole located upstream and the silicon-containing gas discharged from the gas hole located downstream, and the uniformity of the film properties of the silicon film formed between the substrates W varies.

[0030] In this embodiment, the injector 76 has a plurality of introduction ports, and the silicon-containing gas is introduced into the injector 76 through the plurality of introduction ports, so that the positional relationship between the upstream and downstream with respect to the gas hole 76c can be changed. This makes it possible to change the flow rate and distribution of the thermal decomposition rate of the silicon-containing gas discharged toward the substrates W. As a result, it is possible to adjust the distribution of the film properties of the silicon film to be formed among the substrates W.

[0031] [Injector] 2, an injector 200 that is an example of the injector 76 provided in the processing device 10 of FIG. 1 will be described.

[0032] The injector 200 includes a first upright portion 210 and a second upright portion 220. The first upright portion 210 and the second upright portion 220 have the same length and are connected to each other at the top.

[0033] The first upright portion 210 extends along the inside of the inner wall of the processing vessel 34. The upper portion of the first upright portion 210 is bent toward the second upright portion 220 to form a connection portion 211 connected to the second upright portion 220, and the lower portion is open to form an introduction port 212 through which a processing gas is introduced. The first upright portion 210 has the same inner diameter from the bottom to the top.

[0034] The first upright portion 210 includes a plurality of gas holes 213 formed at intervals along the longitudinal direction. The plurality of gas holes 213 are oriented toward the center of the processing vessel 34. As a result, the plurality of gas holes 213 discharge the processing gas introduced from the introduction port 212 of the first upright portion 210 and the introduction port 222 of the second upright portion 220 (described later) in a substantially horizontal direction toward the center of the processing vessel 34. However, the plurality of gas holes 213 may be oriented in a direction different from the center of the processing vessel 34, for example, toward the inner wall of the processing vessel 34.

[0035] The second upright portion 220 extends along the inside of the inner wall of the processing vessel 34. The second upright portion 220 is provided at a position adjacent to the first upright portion 210 in the circumferential direction of the processing vessel 34. However, the second upright portion 220 may be provided at a position adjacent to the first upright portion 210 in the radial direction of the processing vessel 34. The second upright portion 220 has an upper portion bent toward the first upright portion 210 to form a connection portion 221 connected to the first upright portion 210, and a lower portion opened to form an introduction port 222 through which a processing gas is introduced.

[0036] The second upright 220 has the same inner diameter from bottom to top. The inner diameter of the second upright 220 is the same as the inner diameter of the first upright 210.

[0037] In the injector 200, the vertical distribution of the flow rate and the pyrolysis rate of the process gas can be adjusted by changing the flow rate ratio of the process gases introduced into the injector 200 from the introduction ports 212, 222. This makes it possible to adjust the inter-surface uniformity of the gas supply to the substrate W.

[0038] For example, by decreasing the flow rate ratio of the processing gas introduced from the inlet port 212 into the first upright portion 210 to the processing gas introduced from the inlet port 222 into the second upright portion 220, the position where the flow rate is slow can be shifted from the upper part to the lower part of the first upright portion 210. Furthermore, since the residence time of the processing gas becomes longer in the position where the flow rate is slow, the thermal decomposition of the processing gas is promoted. As a result, the position where the thermal decomposition rate is high can be shifted from the upper part to the lower part of the first upright portion 210.

[0039] 3, a description will be given of an injector 300 which is a first modified example of the injector 76 provided in the processing device 10 of FIG 1. The injector 300 differs from the injector 200 in that the inner diameters of the first upright portion 310 and the second upright portion 320 are different.

[0040] The injector 300 includes a first upright portion 310 and a second upright portion 320. The first upright portion 310 and the second upright portion 320 have the same length and are connected to each other at the top.

[0041] The first upright portion 310 extends along the inside of the inner wall of the processing vessel 34. The upper portion of the first upright portion 310 is bent toward the second upright portion 320 to form a connecting portion 311 connected to the second upright portion 320, and the lower portion opens to form an introduction port 312 through which a processing gas is introduced. The inner diameter of the first upright portion 310 is reduced at the connecting portion 311.

[0042] The first upright portion 310 includes a plurality of gas holes 313 formed at intervals along the longitudinal direction. The plurality of gas holes 313 are oriented toward the center of the processing vessel 34. As a result, the plurality of gas holes 313 discharge the processing gas introduced from an introduction port 312 of the first upright portion 310 and an introduction port 322 of the second upright portion 320 (described later) in a substantially horizontal direction toward the center of the processing vessel 34. However, the plurality of gas holes 313 may be oriented in a direction different from the center of the processing vessel 34, for example, toward the inner wall of the processing vessel 34.

[0043] The second upright portion 320 extends along the inside of the inner wall of the processing vessel 34. The second upright portion 320 is provided at a position adjacent to the first upright portion 310 in the circumferential direction of the processing vessel 34. However, the second upright portion 320 may be provided at a position adjacent to the first upright portion 310 in the radial direction of the processing vessel 34. The second upright portion 320 has an upper portion bent toward the first upright portion 310 to form a connection portion 321 connected to the first upright portion 310, and a lower portion opened to form an introduction port 322 through which a processing gas is introduced.

[0044] The second upright portion 320 has the same inner diameter from the bottom to the top. The inner diameter of the second upright portion 320 is the same as the inner diameter of the connection portion 311 of the first upright portion 310. In other words, the inner diameter of the second upright portion 320 is smaller than the inner diameter of the portion of the first upright portion 310 where the multiple gas holes 313 are formed.

[0045] In the injector 300, the vertical distribution of the flow rate and the pyrolysis rate of the process gas can be adjusted by changing the flow rate ratio of the process gases introduced into the injector 300 from the introduction ports 312, 322. This makes it possible to adjust the inter-surface uniformity of the gas supply to the substrate W.

[0046] For example, by decreasing the flow rate ratio of the process gas introduced from the inlet port 312 into the first upright portion 310 to the process gas introduced from the inlet port 322 into the second upright portion 320, the position where the flow rate is slow can be shifted from the upper part to the lower part of the first upright portion 310. Furthermore, since the residence time of the process gas is longer in the position where the flow rate is slow, the thermal decomposition of the process gas is promoted. As a result, the position where the thermal decomposition rate is high can be shifted from the upper part to the lower part of the first upright portion 310.

[0047] 4, a description will be given of an injector 400 which is a second modified example of the injector 76 provided in the processing device 10 of FIG 1. The injector 400 differs from the injector 200 in that a plurality of gas holes 413, 423 are provided in both the first upright portion 410 and the second upright portion 420.

[0048] The injector 400 includes a first upright portion 410 and a second upright portion 420. The first upright portion 410 and the second upright portion 420 have the same length and are connected to each other at the top.

[0049] The first upright portion 410 extends along the inside of the inner wall of the processing vessel 34. The first upright portion 410 has an upper portion bent toward the second upright portion 420 to form a connection portion 411 connected to the second upright portion 420, and a lower portion that opens to form an introduction port 412 through which a processing gas is introduced. The first upright portion 410 has the same inner diameter from the bottom to the top.

[0050] The first upright portion 410 includes a plurality of gas holes 413 formed at intervals along the longitudinal direction. The plurality of gas holes 413 are oriented toward the center of the processing vessel 34. As a result, the plurality of gas holes 413 discharge the processing gas introduced from an introduction port 412 of the first upright portion 410 and an introduction port 422 of a second upright portion 420 (described later) in a substantially horizontal direction toward the center of the processing vessel 34. However, the plurality of gas holes 413 may be oriented in a direction different from the center of the processing vessel 34, for example, toward the inner wall of the processing vessel 34.

[0051] The second upright portion 420 extends along the inside of the inner wall of the processing vessel 34. The second upright portion 420 is provided at a position adjacent to the first upright portion 410 in the circumferential direction of the processing vessel 34. However, the second upright portion 420 may be provided at a position adjacent to the first upright portion 410 in the radial direction of the processing vessel 34. The second upright portion 420 has an upper portion bent toward the first upright portion 410 to form a connection portion 421 connected to the first upright portion 410, and a lower portion opened to form an introduction port 422 through which a processing gas is introduced.

[0052] The second upright portion 420 has the same inner diameter from the bottom to the top. The inner diameter of the second upright portion 420 is the same as the inner diameter of the first upright portion 410. However, the inner diameter of the second upright portion 420 may be different from the inner diameter of the first upright portion 410.

[0053] The second upright portion 420 includes a plurality of gas holes 423 formed at intervals along the longitudinal direction. The plurality of gas holes 423 are oriented on the same side as the plurality of gas holes 413, i.e., toward the center of the processing vessel 34. As a result, the plurality of gas holes 423 discharge the processing gas introduced from the inlet port 412 of the first upright portion 410 and the inlet port 422 of the second upright portion 420 in a substantially horizontal direction toward the center of the processing vessel 34. However, the plurality of gas holes 423 may be oriented in a direction different from the center side of the processing vessel 34, for example, toward the inner wall side of the processing vessel 34. Also, the plurality of gas holes 423 may be oriented in a direction different from the plurality of gas holes 413. Each of the plurality of gas holes 423 is provided at a middle position between two adjacent gas holes 413 in the vertical direction. However, the plurality of gas holes 423 may be provided at the same position as the plurality of gas holes 413 in the vertical direction.

[0054] In the injector 400, the vertical distribution of the flow rate and the pyrolysis rate of the process gas can be adjusted by changing the flow rate ratio of the process gases introduced into the injector 400 from the introduction ports 412, 422. This makes it possible to adjust the inter-surface uniformity of the gas supply to the substrate W.

[0055] 5, a description will be given of an injector 500 which is a third modified example of the injector 76 provided in the processing device 10 of FIG 1. The injector 500 differs from the injector 200 in that it includes a third upright portion 530 connected midway to the first upright portion 510.

[0056] The injector 500 includes a first upright portion 510, a second upright portion 520, and a third upright portion 530. The first upright portion 510 and the second upright portion 520 have the same length and are connected to each other at the upper portion. The third upright portion 530 has a length shorter than the first upright portion 510 and is connected to the middle of the first upright portion 510 at the upper portion.

[0057] The first upright portion 510 extends along the inside of the inner wall of the processing vessel 34. The upper portion of the first upright portion 510 is bent toward the second upright portion 520 to form a connection portion 511 connected to the second upright portion 520, and the lower portion is open to form an introduction port 512 through which a processing gas is introduced. The first upright portion 510 has the same inner diameter from the bottom to the top.

[0058] The first upright portion 510 includes a plurality of gas holes 513 formed at intervals along the longitudinal direction. The plurality of gas holes 513 are oriented toward the center of the processing vessel 34. As a result, the plurality of gas holes 513 discharge the processing gas introduced from the inlet port 512 of the first upright portion 510, the inlet port 522 of the second upright portion 520 (described later), and the inlet port 532 of the third upright portion 530 (described later) in a substantially horizontal direction toward the center of the processing vessel 34. However, the plurality of gas holes 513 may be oriented in a direction different from the center of the processing vessel 34, for example, toward the inner wall side of the processing vessel 34.

[0059] The second upright portion 520 extends along the inside of the inner wall of the processing vessel 34. The second upright portion 520 is provided at a position adjacent to the first upright portion 510 in the circumferential direction of the processing vessel 34. However, the second upright portion 520 may be provided at a position adjacent to the first upright portion 510 in the radial direction of the processing vessel 34. The second upright portion 520 has an upper portion bent toward the first upright portion 510 to form a connection portion 521 connected to the first upright portion 510, and a lower portion opened to form an introduction port 522 through which a processing gas is introduced.

[0060] The second upright portion 520 has the same inner diameter from bottom to top. The inner diameter of the second upright portion 520 is the same as the inner diameter of the first upright portion 510. However, the inner diameter of the second upright portion 520 may be different from the inner diameter of the first upright portion 510.

[0061] The third upright portion 530 extends along the inner side of the inner wall of the processing vessel 34. The third upright portion 530 is provided adjacent to the first upright portion 510 on a side different from the second upright portion 520 in the circumferential direction of the processing vessel 34. In other words, the third upright portion 530, the first upright portion 510, and the second upright portion 520 are provided in this order along the circumferential direction of the processing vessel 34. However, the third upright portion 530 may be provided adjacent to the first upright portion 510 in the radial direction of the processing vessel 34.

[0062] The third upright portion 530 has an upper portion bent toward the first upright portion 510 to form a connection portion 531 connected to the first upright portion 510, and a lower portion opened to form an introduction port 532 through which a process gas is introduced. The third upright portion 530 is connected to a middle position in the up-down direction of the first upright portion 510. However, the third upright portion 530 may be connected to a position above the middle position in the up-down direction of the first upright portion 510 (the connection portion 511 side), or may be connected to a position below the middle position in the up-down direction of the first upright portion 510 (the introduction port 512 side).

[0063] The third upright portion 530 has the same inner diameter from the bottom to the top. The inner diameter of the third upright portion 530 is the same as the inner diameter of the first upright portion 510. However, the inner diameter of the third upright portion 530 may be different from the inner diameter of the first upright portion 510.

[0064] In the injector 500, the vertical distribution of the flow rate and the pyrolysis rate of the process gas can be adjusted by changing the flow rate ratio of the process gas introduced into the injector 500 from the introduction ports 512, 522, and 532. This makes it possible to adjust the inter-surface uniformity of the gas supply to the substrate W.

[0065] For example, by decreasing the flow rate ratio of the process gas introduced from the inlet port 512 into the first upright portion 510 to the process gas introduced from the inlet port 522 into the second upright portion 520, the position where the flow rate is slow can be shifted from the upper part to the lower part of the first upright portion 510. Furthermore, since the residence time of the process gas is longer in the position where the flow rate is slow, the thermal decomposition of the process gas is promoted. As a result, the position where the thermal decomposition rate is high can be shifted from the upper part to the lower part of the first upright portion 510.

[0066] [Analysis results] The results of an analysis by computational fluid dynamics (CFD) (hereinafter referred to as "CFD analysis") conducted to confirm the effect of the injector 76 of the embodiment will be described with reference to FIGS.

[0067] In the CFD analysis, we analyzed how the mole fraction of reactive species (SiH2) and the mass flow rate of the raw material gas change when the flow rate ratio of the raw material gas (Si2H6) introduced into the injector from multiple introduction ports is changed. The reason why we analyzed the mole fraction of reactive species (SiH2) is that we took into consideration that the film thickness of the film deposited on the substrate W is caused by the concentration of reactive species (Si2H6) generated by the thermal decomposition of the raw material gas (Si2H6).

[0068] (Analysis A) First, the mole fraction of SiH2 and the mass flow rate of Si2H6 were analyzed when the flow rate ratio of Si2H6 introduced into the injector 200 from the introduction ports 212 and 222 was changed using the injector 200 of Fig. 2. In this analysis, the inner diameter of the injector 200 was set to 13.5 mm, the hole diameter of the gas hole 313 was set to 0.5 mm, the number of gas holes 313 was set to 61, and the total flow rate of Si2H6 was set to 500 sccm. In addition, the flow rate ratio X / Y between the flow rate X of Si2H6 introduced into the injector 200 from the introduction port 212 and the flow rate Y of Si2H6 introduced into the injector 200 from the introduction port 222 was changed as follows:

[0069] X / Y=450 / 50, 420 / 80, 400 / 100, 300 / 200, 250 / 250, 200 / 300, 100 / 400, 80 / 420, 50 / 450 (All values ​​are in sccm.)

[0070] Fig. 6 is a diagram showing the analysis results of the molar fraction of SiH2 when the injector 200 (inner diameter: 13.5 mm) of Fig. 2 is used. In Fig. 6, the horizontal axis indicates the position of the gas hole 213, and the vertical axis indicates the molar fraction of SiH2. The position of the gas hole 213 indicates the number of the gas hole from the top of the first upright portion 210.

[0071] 6, it can be seen that the peak position of the SiH2 mole fraction shifts when the flow rate ratio X / Y is changed. Specifically, it can be seen that the peak position of the SiH2 mole fraction shifts from the top (TOP) to the bottom (BTM) of the injector 200 as the flow rate ratio X / Y is reduced.

[0072] 6, when the flow rate ratio X / Y is large, the molar fraction of SiH2 at the position above the peak position (TOP side) is higher than the molar fraction of SiH2 at the position below the peak position (BTM side). In other words, when the flow rate ratio X / Y is large, the waveform of the SiH2 molar fraction is not symmetrical.

[0073] Fig. 7 is a diagram showing the analysis results of the mass flow rate when the injector 200 (inner diameter: 13.5 mm) of Fig. 2 is used. In Fig. 7, the horizontal axis indicates the position of the gas hole 213, and the vertical axis indicates the mass flow rate of Si2H6 [arb.unit]. The position of the gas hole 213 indicates the number of the gas hole from the top of the first upright portion 210. The mass flow rate of Si2H6 is shown in an arbitrary unit so that the results do not overlap between different flow rate ratios X / Y.

[0074] As shown in FIG. 7, even if the flow rate ratio X / Y is changed, the mass flow rate of Si2H6 hardly changes, and is approximately constant at all positions in the vertical direction of the injector 200.

[0075] From the results shown in Figures 6 and 7 described above, it was shown that by using the injector 200 (inner diameter: 13.5 mm), the mass flow rate distribution of Si2H6 in the vertical direction can be made approximately constant, and the peak position of the thermal decomposition rate of Si2H6 can be shifted in the vertical direction.

[0076] (Analysis B) Next, the mole fraction of SiH2 and the mass flow rate of Si2H6 were analyzed when the flow rate ratio of Si2H6 introduced into the injector 300 from the introduction ports 312 and 322 was changed using the injector 300 of Fig. 3. In this analysis, the inner diameter of the first upright portion 310 was set to 13.5 mm, the inner diameter of the second upright portion 320 was set to 5.4 mm, the hole diameter of the gas hole 313 was set to 0.5 mm, the number of gas holes 313 was set to 61, and the total flow rate of Si2H6 was set to 500 sccm. In addition, the flow rate ratio X / Y between the flow rate X of Si2H6 introduced into the injector 300 from the introduction port 312 and the flow rate Y of Si2H6 introduced into the injector 300 from the introduction port 322 was changed as follows.

[0077] X / Y=490 / 10, 420 / 80, 250 / 250, 80 / 420, 10 / 490 (All values ​​are in sccm.)

[0078] FIG. 8 is a diagram showing the analysis results of the molar fraction of SiH2 when the injector 300 of FIG. 3 is used. In FIG. 8, the horizontal axis indicates the position of the gas hole 313, and the vertical axis indicates the molar fraction of SiH2. The position of the gas hole 313 indicates the number of the gas hole from the top of the first upright portion 310. For comparison, FIG. 8 also shows the analysis results of the molar fraction of SiH2 when the injector 200 of FIG. 2 (inner diameter: 13.5 mm) is used. In FIG. 8, the results of the injector 300 are shown by a solid line, and the results of the injector 200 (inner diameter: 13.5 mm) are shown by a dashed line.

[0079] 8, it can be seen that the peak position of the SiH2 mole fraction shifts when the flow rate ratio X / Y is changed. Specifically, it can be seen that the peak position of the SiH2 mole fraction shifts from the top (TOP) to the bottom (BTM) of the injector 300 as the flow rate ratio X / Y is reduced.

[0080] Furthermore, as shown in FIG. 8, when injector 300 is used, the molar fraction of SiH2 at the position above the peak position (TOP side) is smaller than when injector 200 is used, and the waveform of the molar fraction of SiH2 is symmetrical.

[0081] Fig. 9 is a diagram showing the analysis results of the mass flow rate when the injector 300 of Fig. 3 is used. In Fig. 9, the horizontal axis indicates the position of the gas hole 313, and the vertical axis indicates the mass flow rate of Si2H6 [arb.unit]. The position of the gas hole 313 indicates the number of the gas hole from the top of the first upright portion 310.

[0082] As shown in FIG. 9, even if the flow rate ratio X / Y is changed, the mass flow rate of Si2H6 hardly changes, and is approximately constant at all positions in the vertical direction of the injector 300.

[0083] From the results shown in Figures 8 and 9 described above, it has been shown that by using the injector 300, the mass flow rate distribution of Si2H6 in the vertical direction can be made approximately constant, and the peak position of the thermal decomposition rate of Si2H6 can be shifted in the vertical direction.

[0084] It was also shown that the waveform of the SiH2 molar fraction can be made symmetrical by making the inner diameter of the upright portion (second upright portion 320) on the side where gas hole 313 is not provided smaller than the inner diameter of the upright portion (first upright portion 310) on the side where gas hole 313 is provided.

[0085] (Analysis C) Next, the mole fraction of SiH2 and the mass flow rate of Si2H6 were analyzed when the flow rate ratio of Si2H6 introduced into the injector 200 from the introduction ports 212 and 222 was changed using the injector 200 of Fig. 2. In this analysis, the inner diameter of the injector 200 was set to 5.4 mm, the hole diameter of the gas hole 313 was set to 0.5 mm, the number of gas holes 313 was set to 61, and the total flow rate of Si2H6 was set to 500 sccm. In addition, the flow rate ratio X / Y between the flow rate X of Si2H6 introduced into the injector 200 from the introduction port 212 and the flow rate Y of Si2H6 introduced into the injector 200 from the introduction port 222 was changed as follows:

[0086] X / Y=490 / 10, 400 / 100, 300 / 200, 250 / 250, 200 / 300, 100 / 400, 10 / 490 (All values ​​are in sccm.)

[0087] FIG. 10 is a diagram showing the analysis results of the molar fraction of SiH2 when the injector 200 (inner diameter: 5.4 mm) of FIG. 2 is used. In FIG. 10, the horizontal axis indicates the position of the gas hole 213, and the vertical axis indicates the molar fraction of SiH2. The position of the gas hole 213 indicates the number of the gas hole from the top of the first upright portion 310. For comparison, FIG. 10 also shows the analysis results of the molar fraction of SiH2 when the injector 200 (inner diameter: 13.5 mm) of FIG. 2 is used. In FIG. 10, the results of the injector 200 (inner diameter: 5.4 mm) are shown by a solid line, and the results of the injector 200 (inner diameter: 13.5 mm) are shown by a dashed line.

[0088] 10, it can be seen that the peak position of the SiH2 mole fraction shifts when the flow rate ratio X / Y is changed. Specifically, it can be seen that the peak position of the SiH2 mole fraction shifts from the top (TOP) to the bottom (BTM) of the injector 200 as the flow rate ratio X / Y is reduced.

[0089] 10, it can be seen that when the injector 200 (inner diameter: 5.4 mm) is used, the molar fraction of SiH2 is generally smaller than when the injector 200 (inner diameter: 13.5 mm) is used. That is, it can be seen that when the injector 200 (inner diameter: 5.4 mm) is used, the thermal decomposition rate of Si2H6 is suppressed to a lower value than when the injector 200 (inner diameter: 13.5 mm) is used.

[0090] Fig. 11 is a diagram showing the analysis results of the mass flow rate when the injector 200 (inner diameter: 5.4 mm) of Fig. 2 is used. In Fig. 11, the horizontal axis indicates the position of the gas hole 213, and the vertical axis indicates the mass flow rate (mass flow rate) [sccm] of Si2H6. The position of the gas hole 213 indicates the number of the gas hole from the top of the first upright portion 210.

[0091] 11, it can be seen that the distribution of the mass flow rate of Si2H6 changes significantly when the flow rate ratio X / Y is changed. Specifically, when the flow rate ratio X / Y is greater than 1, the distribution shows that the mass flow rate of Si2H6 increases from the top (TOP) to the bottom (BTM) of the injector 200. On the other hand, when the flow rate ratio X / Y is less than 1, the distribution shows that the mass flow rate of Si2H6 decreases from the top (TOP) to the bottom (BTM) of the injector 200. Also, when the flow rate ratio X / Y is 1, the distribution shows a concave shape where the mass flow rate of Si2H6 is minimum at the position of the gas hole 213 provided at the center in the vertical direction.

[0092] The results of FIGS. 10 and 11 described above show that by reducing the inner diameter of the injector 200, the thermal decomposition rate of Si2H6 can be kept low and the rate of change in the mass flow rate distribution of Si2H6 in the vertical direction when the flow rate ratio X / Y is changed can be increased.

[0093] (Analysis D) Next, the molar fraction of SiH2 and the mass flow rate of Si2H6 were analyzed when the flow rate ratio of Si2H6 introduced into the injector 400 from the introduction ports 412 and 422 was changed using the injector 400 of FIG. 4. In this analysis, the inner diameter of the injector 400 was set to 5.4 mm, the hole diameter of the gas hole 413 was set to 0.5 mm, and the total flow rate of Si2H6 was set to 500 sccm. In addition, the number of gas holes 413 provided in the first upright portion 410 was set to 31, and the number of gas holes 423 provided in the second upright portion 420 was set to 30. In addition, the flow rate ratio X / Y between the flow rate X of Si2H6 introduced into the injector 400 from the introduction port 412 and the flow rate Y of Si2H6 introduced into the injector 400 from the introduction port 422 was changed as follows.

[0094] X / Y=490 / 10, 250 / 250, 10 / 490 (All values ​​are in sccm.)

[0095] 12 is a diagram showing the results of an analysis of the molar fraction of SiH2 when the injector 400 of FIG. 4 is used. In FIG. 12, the horizontal axis indicates the positions of the gas holes 413 and 423, and the vertical axis indicates the molar fraction of SiH2. The positions of the gas holes 413 and 423 indicate the positions of the gas holes from the top of the first upright portion 410 and the second upright portion 420. For example, the position represented by "1" indicates the position of the gas hole 413 provided at the top of the first upright portion 410, and the position represented by "2" indicates the position of the gas hole 423 provided at the top of the second upright portion 420.

[0096] As shown in Fig. 12, it can be seen that the mole fraction of SiH2 is generally small. In other words, it can be seen that the thermal decomposition rate of Si2H6 is generally kept low. This is thought to be due to the small inner diameter of the injector 400, which is 5.4 mm.

[0097] 13 is a diagram showing the analysis results of the mass flow rate when the injector 400 of FIG. 4 is used. In FIG. 13, the horizontal axis indicates the positions of the gas holes 413 and 423, and the vertical axis indicates the mass flow rate of Si2H6 [arb.unit]. The positions of the gas holes 413 and 423 indicate the positions of the gas holes from the top of the first upright portion 410 and the second upright portion 420. For example, the position represented by "1" indicates the position of the gas hole 413 provided at the top of the first upright portion 410, and the position represented by "2" indicates the position of the gas hole 423 provided at the top of the second upright portion 420.

[0098] As shown in FIG. 13, it can be seen that when the flow rate ratio X / Y is changed, the distribution of the mass flow rate of Si2H6 changes significantly.

[0099] 12 and 13, it has been shown that by using the injector 400, the mass flow rate distribution of Si2H6 in the vertical direction can be changed when the flow rate ratio X / Y is changed.

[0100] (Analysis E) Next, the molar fraction of SiH2 was analyzed when N2 was added to Si2H6 introduced into the injector 300 from the introduction ports 312 and 322, using the injector 300 of Fig. 3. In this analysis, the inner diameter of the first upright portion 310 was set to 13.5 mm, the inner diameter of the second upright portion 320 to 5.4 mm, the hole diameter of the gas hole 313 to 0.5 mm, the number of gas holes 313 to 61, and the total flow rate of Si2H6 to 500 sccm. In addition, the flow rate ratio X / Y between the flow rate X of Si2H6 introduced into the injector 300 from the introduction port 312 and the flow rate Y of Si2H6 introduced into the injector 300 from the introduction port 322 was set as follows:

[0101] X / Y=490 / 10, 10 / 490 (All values ​​are in sccm.)

[0102] In addition, N2 was supplied as an additive gas from the inlet port 312, 322 whichever had the smaller flow rate of Si2H6 out of flow rate X and flow rate Y. The amount of N2 added was as follows.

[0103] N2 = 0.0, 0.1, 0.2, 0.3, 0.4, 0.5 (All values ​​are in sccm.)

[0104] Fig. 14 is a diagram showing the analysis results of the molar fraction of SiH2 when the injector 300 of Fig. 3 is used. Fig. 14 shows the results when the flow rate ratio X / Y is set to 490 / 10 and N2 is supplied from the introduction port 322. In Fig. 14, the horizontal axis indicates the position of the gas hole 313, and the vertical axis indicates the molar fraction of SiH2. The position of the gas hole 313 indicates the number of the gas hole arranged from the top of the first upright portion 310.

[0105] As shown in Fig. 14, when the amount of N2 added is changed, the peak height of the SiH2 molar fraction changes. Specifically, it is found that the peak height of the SiH2 molar fraction decreases as the amount of N2 added increases.

[0106] Fig. 15 is a diagram showing the analysis results of the molar fraction of SiH2 when the injector 300 of Fig. 3 is used. Fig. 15 shows the results when the flow rate ratio X / Y is set to 10 / 490 and N2 is supplied from the introduction port 312. In Fig. 15, the horizontal axis indicates the position of the gas hole 313, and the vertical axis indicates the molar fraction of SiH2. The position of the gas hole 313 indicates the number of the gas hole arranged from the top of the first upright portion 310.

[0107] As shown in Fig. 15, when the amount of N2 added is changed, the peak height of the SiH2 molar fraction changes. Specifically, it is found that the peak height of the SiH2 molar fraction decreases as the amount of N2 added increases.

[0108] 14 and 15, it was shown that when the difference between the flow rate X and the flow rate Y is large, the peak height of the mole fraction of Si2H6 can be suppressed by introducing N2 into the injector 300 from the inlet port 312, 322 with the lower flow rate of Si2H6. In other words, it was shown that when the difference between the flow rate X and the flow rate Y is large, the thermal decomposition rate of Si2H6 can be suppressed from becoming extremely high at the peak position by introducing N2 into the injector 300 from the inlet port 312, 322 with the lower flow rate of Si2H6.

[0109] (Analysis F) Next, the mole fraction of SiH2 was analyzed when the total flow rate of Si2H6 introduced into injector 200 from introduction ports 212 and 222 was changed using injector 200 in Fig. 2. In this analysis, the inner diameter of injector 200 was set to 5.4 mm, the hole diameter of gas hole 213 was set to 0.5 mm, the number of gas holes 213 was set to 61, and the total flow rate of Si2H6 was set to 700 sccm, 300 sccm, and 100 sccm. In addition, the flow rate ratio X / Y of the flow rate X of Si2H6 introduced into injector 200 from introduction port 212 to the flow rate Y of Si2H6 introduced into injector 200 from introduction port 222 was set as follows:

[0110] X / Y=630 / 70, 350 / 350, 70 / 630 (All values ​​are in sccm.) X / Y=270 / 30, 150 / 150, 30 / 270 (All values ​​are in sccm.) X / Y=90 / 10, 50 / 50, 10 / 90 (All values ​​are in sccm.)

[0111] 16 to 18 are diagrams showing the analysis results of the molar fraction of SiH2 when the total flow rate of Si2H6 is changed. Figs. 16, 17, and 18 show the results when the total flow rate of Si2H6 is 700 sccm, 300 sccm, and 100 sccm, respectively. In Figs. 16 to 18, the horizontal axis indicates the position of the gas hole 213, and the vertical axis indicates the molar fraction of SiH2. The position of the gas hole 213 indicates the number of the gas hole from the top of the first upright portion 210.

[0112] 16 to 18, it can be seen that the peak position of the SiH2 molar fraction shifts with the same tendency when the flow rate ratio X / Y is changed, regardless of whether the total flow rate of Si2H6 is 700 sccm, 300 sccm, or 100 sccm. Specifically, it can be seen that the peak position of the SiH2 molar fraction shifts from the top (TOP) to the bottom (BTM) of the injector 200 as the flow rate ratio X / Y is reduced.

[0113] The results of Figs. 16 to 18 described above demonstrate robustness with respect to the total flow rate.

[0114] (Analysis G) Next, the mole fraction of SiH2 was analyzed when the hole diameter of gas hole 213 was changed using injector 200 of Fig. 2. In this analysis, the inner diameter of injector 200 was set to 5.4 mm, the hole diameters of gas hole 213 were set to 0.7 mm and 0.5 mm, the number of gas holes 213 was set to 61, and the total flow rate of Si2H6 was set to 500 sccm. In addition, the flow rate ratio X / Y of the flow rate X of Si2H6 introduced into injector 200 from introduction port 212 to the flow rate Y of Si2H6 introduced into injector 200 from introduction port 222 was set as follows:

[0115] X / Y=450 / 50, 250 / 250, 50 / 450 (All values ​​are in sccm.)

[0116] Fig. 19 is a diagram showing the analysis results of the molar fraction of SiH2 when the hole diameter of the gas hole is changed. In Fig. 19, the horizontal axis indicates the position of the gas hole 213, and the vertical axis indicates the molar fraction of SiH2. The position of the gas hole 213 indicates the number of the gas hole from the top of the first upright portion 210.

[0117] 19, whether the gas hole diameter is 0.7 mm or 0.5 mm, when the flow rate ratio X / Y is changed, the peak position of the SiH2 mole fraction shifts with the same tendency. Specifically, it can be seen that the smaller the flow rate ratio X / Y is, the more the peak position of the SiH2 mole fraction shifts from the top (TOP) to the bottom (BTM) of the injector 200.

[0118] The results shown in FIG. 19 and described above demonstrate robustness against the diameter of the gas holes.

[0119] In the above embodiment, the introduction ports 212, 312, 412, and 512 are an example of a first introduction port, the introduction ports 222, 322, 422, and 522 are an example of a second introduction port, and the introduction port 532 is an example of a third introduction port.

[0120] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0121] 10 Processing equipment 34 Processing vessel 76 Injector 95 Control Unit 200 Injector 212,222 Introduction port 213 Gas hole 300 Injector 312,322 Introduction Port 313 Gas hole 400 Injector 412,422 Introduction port 413,423 Gas hole 500 Injector 512,522,532 Introduction port 513 Gas hole

Claims

1. A processing vessel having a substantially cylindrical shape; an injector extending in a longitudinal direction along the inside of an inner wall of the processing vessel, the injector having a plurality of inlet ports through which a processing gas is introduced and a plurality of gas holes through which the processing gas introduced from the plurality of inlet ports is discharged into the processing vessel; a control unit that changes a flow rate ratio of the process gas introduced into the injector through the plurality of introduction ports; Equipped with The control unit changes the flow rate ratio during a film formation process for depositing films on a plurality of substrates. Processing unit.

2. the injector includes a first upright portion and a second upright portion connected to each other at a top portion; the plurality of introduction ports include a first introduction port provided at a lower portion of the first upright portion and a second introduction port provided at a lower portion of the second upright portion; The processing device of claim 1 .

3. The plurality of gas holes are provided in either the first upright portion or the second upright portion. The processing device according to claim 2 .

4. the plurality of gas holes are provided in the first upright portion, The inner diameter of the second upright portion is smaller than the inner diameter of the first upright portion. The processing device according to claim 2 or 3.

5. the injector includes a third upright portion connected midway to the first upright portion, The plurality of introduction ports include a third introduction port provided at a lower portion of the third upright portion. The processing device according to any one of claims 2 to 4.

6. The plurality of gas holes are provided in the first upright portion and the second upright portion. The processing device according to claim 2 .

7. the processing vessel accommodates a plurality of substrates substantially horizontally at intervals in the longitudinal direction; The processing device according to any one of claims 1 to 6.

8. the multiple inlet ports are connected to the same process gas source; The processing device according to any one of claims 1 to 7.

9. The process gas includes a source gas for depositing a film on a plurality of substrates. The processing device of claim 8.

10. The process gas comprises an inert gas.

10. The processing device according to claim 8 or 9.

11. A processing vessel having a substantially cylindrical shape; an injector extending in a longitudinal direction along the inside of an inner wall of the processing vessel, the injector having a plurality of inlet ports through which a processing gas is introduced and a plurality of gas holes through which the processing gas introduced from the plurality of inlet ports is discharged into the processing vessel; A processing method for processing a plurality of substrates in a processing apparatus comprising: changing a flow rate ratio of the process gases introduced into the injector from the plurality of introduction ports during a film formation process for depositing films on the plurality of substrates; Processing methods.

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