Silicon film forming method and processing apparatus

Abstract

To provide a technology that can control the in-plane distribution of film properties of silicon films.SOLUTION: A method for forming a silicon film according to an aspect of the present disclosure includes a plurality of processes for depositing a silicon film by supplying a processing gas containing silicon-containing gas to a substrate, and the plurality of processes includes two or more processes performed under different processing conditions in which the in-plane distribution of film properties when the silicon film is deposited is different.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present disclosure relates to a method and processing apparatus for forming a silicon film. [Background technology]

[0002] A technique is known in which disilane (Si2H6) is supplied from the side of the wafer to form a silicon film on the wafer (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-192528 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of controlling the in-plane distribution of film properties of a silicon film. [Means for solving the problem]

[0005] A method for forming a silicon film according to an embodiment of the present disclosure includes a plurality of steps for depositing a silicon film by supplying a process gas containing a silicon-containing gas to a substrate, the plurality of steps including two or more steps performed under process conditions that cause different in-plane distributions of film properties when the silicon film is deposited. fruit , The processing conditions include the presence or absence of an additive gas added to the silicon-containing gas. . Effect of the Invention

[0006] According to the present disclosure, the in-plane distribution of the film properties of a silicon film can be controlled. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram showing an example of an overall configuration of a processing apparatus according to an embodiment; [Diagram 2]FIG. 2 is a diagram for explaining a processing vessel in the processing apparatus of FIG. [Diagram 3] FIG. 2 is a diagram for explaining a gas supply unit in the processing apparatus of FIG. [Figure 4] 1 is a flowchart showing an example of a method for forming a silicon film according to an embodiment. [Diagram 5] 1 is a cross-sectional view showing a process of an example of a method for forming a silicon film according to an embodiment of the present invention; [Figure 6] FIG. 1 is a diagram for explaining the in-plane distribution of the thickness of a silicon film. [Figure 7] FIG. 13 is a diagram showing the in-plane distribution of the thickness of a silicon film in an embodiment. [Figure 8] FIG. 11 is a diagram showing the relationship between the Si2H6 flow rate and the processing pressure and the thickness distribution of the silicon film. [Figure 9] FIG. 11 is a diagram showing the relationship between the Si2H6 flow rate and the processing pressure and the thickness distribution of the silicon film. [Figure 10] FIG. 11 is a diagram showing the relationship between the Si2H6 flow rate and the processing pressure and the thickness distribution of the silicon film. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all of the accompanying drawings, the same or corresponding members or parts are designated by the same or corresponding reference numerals, and duplicated descriptions will be omitted.

[0009] [Processing Device] An example of a processing apparatus according to an embodiment will be described with reference to Fig. 1 to Fig. 3. Fig. 1 is a schematic diagram showing an example of the overall configuration of a processing apparatus according to an embodiment. Fig. 2 is a diagram for explaining a processing vessel in the processing apparatus of Fig. 1. Fig. 3 is a diagram for explaining a gas supply unit in the processing apparatus of Fig. 1.

[0010] The processing apparatus 1 includes a processing vessel 20, a gas supply unit 40, an exhaust unit 60, a heating unit 80, and a control unit 90.

[0011] The processing vessel 20 accommodates a boat WB. The boat WB holds a plurality of substrates W at a predetermined interval in the height direction. The substrates W may be, for example, semiconductor wafers. The processing vessel 20 has an inner tube 21 and an outer tube 22. The inner tube 21 is formed in a cylindrical shape with a ceiling and an open lower end. The ceiling part of the inner tube 21 is formed, for example, flat. The outer tube 22 is formed in a cylindrical shape with a ceiling and an open lower end covering the outside of the inner tube 21. That is, the upper part of the outer tube 22 is closed. The inner tube 21 and the outer tube 22 are arranged coaxially to form a double tube structure. The inner tube 21 and the outer tube 22 are formed of a heat-resistant material such as quartz.

[0012] A nozzle accommodating section 23 that accommodates a gas nozzle is formed along the longitudinal direction (vertical direction) of one side of the inner tube 21. As shown in Fig. 2, for example, the nozzle accommodating section 23 is formed by forming a convex portion 24 by protruding a part of the side wall of the inner tube 21 outward, and the inside of the convex portion 24 is formed as the nozzle accommodating section 23. A rectangular opening 25 is formed along the longitudinal direction (vertical direction) of the side wall of the inner tube 21 opposite to the nozzle accommodating section 23.

[0013] The opening 25 is a gas exhaust port formed so as to be able to exhaust gas from the inner tube 21. The vertical length of the opening 25 is the same as the vertical length of the boat WB, or is formed so as to extend in the vertical direction longer than the length of the boat WB. That is, the upper end of the opening 25 is located at a height equal to or higher than the position corresponding to the upper end of the boat WB, and the lower end of the opening 25 is located at a height equal to or lower than the position corresponding to the lower end of the boat WB.

[0014] A ring-shaped support 26 is provided on the inner wall of the lower part of the outer tube 22. The support 26 supports the lower end of the inner tube 21. A gas outlet 27 is formed on the side wall of the outer tube 22 above the support 26. A lid 28 is airtightly attached to the opening at the lower end of the outer tube 22 via a seal member 29 such as an O-ring, so as to airtightly close and seal the opening at the lower end of the processing vessel 20. The lid 28 is configured so that the opening can be opened and closed. The lid 28 is made of, for example, stainless steel.

[0015] A rotating shaft 31 is provided penetrating the center of the lid 28 via a magnetic fluid seal 30. The lower part of the rotating shaft 31 is rotatably supported by an arm 32A of an elevating means 32 consisting of a boat elevator.

[0016] A rotating plate 33 is provided at the upper end of the rotating shaft 31. The boat WB is placed on the rotating plate 33 via a heat retention stand 34 made of quartz. Therefore, by raising and lowering the lifting means 32, the lid 28 and the boat WB move up and down as a unit, so that the boat WB can be inserted into and removed from the processing vessel 20.

[0017] The gas supply unit 40 introduces a predetermined gas into the processing vessel 20. The gas supply unit 40 is provided at the bottom of the outer tube 22, and introduces a predetermined gas into the inner tube 21. The gas supply unit 40 has a plurality of (e.g., three) gas nozzles 41, 42, and 43.

[0018] The gas nozzles 41, 42, 43 are formed of, for example, quartz tubes having a circular cross section. The gas nozzles 41, 42, 43 are arranged in a row along the circumferential direction in the nozzle accommodating portion 23 of the inner tube 21. The base ends of the gas nozzles 41, 42, 43 are connected to, for example, the inner wall portion of the outer tube 22, respectively, and the tip ends are closed. The gas nozzles 41, 42, 43 are bent in an L-shape so as to extend inward from the inner wall portion of the outer tube 22 and rise vertically upward along the inner wall of the inner tube 21, and the tip ends rising upward are bent downward in a U-shape and formed to extend vertically. In the illustrated example, the gas nozzles 41, 42, 43 are formed so as to be bent toward the inside of the inner tube 21, but may be formed so as to be bent along the circumferential direction of the inner tube 21, for example. Further, the gas nozzles 41, 42, 43 may be provided so as to rise vertically upward along the inner wall of the inner tube 21 without having their tips bent.

[0019] The gas nozzles 41, 42, and 43 are formed such that the height positions of the bent portions 41B, 42B, and 43B, which are the bent portions, are different from each other. The gas nozzle 41 is bent, for example, above the ceiling portion of the boat WB. The gas nozzle 43 is bent, for example, above the tip of the gas nozzle 41, and is provided so that its tip is located on the lower side of the wafer boat. The gas nozzle 42 is bent, for example, at a height position between the bent portions 41B and 43B of the gas nozzles 41 and 43, and its tip is provided at a height position between the tips of the gas nozzles 41 and 43. The gas nozzles 41, 42, and 43 are formed such that the shapes of the bent portions 41B, 42B, and 43B are aligned with each other. Further, the gas nozzles 41, 42, and 43 are arranged such that the distances between the gas supply pipes downstream of the bent portions 41B, 42B, and 43B, respectively, and the outer edge of the substrate W held in the boat WB are equal, for example.

[0020] Gas nozzles 41, 42, 43 have gas discharge holes 41A, 42A, 43A formed on the tip side of bent portions 41B, 42B, 43B, respectively. Gas discharge holes 41A, 42A, 43A are, for example, circular and of the same size, and are formed, for example, at equal intervals along the length direction of gas nozzles 41, 42, 43. Gas discharge holes 41A, 42A, 43A discharge gas horizontally toward boat WB. That is, gas is supplied from the sides of multiple substrates W mounted on boat WB. In addition, since the height positions of bent portions 41B, 42B, 43B are different, the height positions of gas discharge holes 41A, 42A, 43A are different among gas nozzles 41, 42, 43. In this way, gas discharge holes 41A, 42A, 43A supply gas to each of multiple regions divided in the height direction of processing vessel 20 in which substrates W are arranged. In the illustrated example, the gas discharge hole 41A supplies gas to an upper region of the boat WB, the gas discharge hole 42A supplies gas to a central region of the boat WB, and the gas discharge hole 43A supplies gas to a lower region of the boat WB.

[0021] The predetermined gas includes a process gas such as a film-forming gas, an etching gas, and a cleaning gas. The film-forming gas includes a silicon-containing gas such as monosilane (SiH4) or disilane (Si2H6), and an additive gas such as hydrogen (H2) or nitrogen (N2) added to the silicon-containing gas. The predetermined gas also includes a purge gas for purging the process gas. The predetermined gas is introduced into the process chamber 20 from the gas nozzles 41, 42, and 43 with its flow rate controlled.

[0022] The exhaust unit 60 exhausts gas from within the processing vessel 20. The exhaust unit 60 has an exhaust passage 61 connected to the gas outlet 27. A pressure adjustment valve 62 and a vacuum pump 63 are provided in this order in the exhaust passage 61 so that the inside of the processing vessel 20 can be evacuated to a vacuum. The exhaust unit 60 exhausts gas from within the inner tube 21, which is discharged from the opening 25 via, for example, the space 35 between the inner tube 21 and the outer tube 22.

[0023] The heating part 80 heats the substrate W accommodated in the processing vessel 20. The heating part 80 is formed, for example, on the outer periphery of the outer tube 22 in a cylindrical shape so as to cover the outer tube 22. The heating part 80 has heaters 81A-81F arranged, for example, from the top to the bottom. Since the heating part 80 has a plurality of divided heaters 81A-81F, the temperature can be controlled independently in the vertical direction. However, the heating part 80 may have a single heater that is not divided.

[0024] The control unit 90 controls the operation of the entire apparatus. The control unit 90 has a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU executes a desired heat treatment according to a recipe stored in a storage area such as the RAM. The recipe sets control information for the apparatus with respect to process conditions. The control information may be, for example, a gas flow rate, pressure, temperature, and process time. The recipe and the program used by the control unit 90 may be stored in, for example, a hard disk or a semiconductor memory. The recipe and the like may be set at a predetermined position in a state where they are stored in a portable computer-readable storage medium such as a CD-ROM or DVD, and may be read out. The control unit 90 may be provided separately from the processing apparatus 1.

[0025] [Method of forming silicon film] 4 to 6, the silicon film forming method of the embodiment will be described by taking as an example a case where the method is carried out in the above-mentioned processing apparatus 1. However, the silicon film forming method of the embodiment can also be carried out in an apparatus other than the above-mentioned processing apparatus 1.

[0026] As shown in FIG. 4, the silicon film forming method of the embodiment includes a step S1 of preparing a substrate, a step S2 of forming a silicon film having a convex film thickness distribution, and a step S3 of forming a silicon film having a concave film thickness distribution.

[0027] In the step S1 of preparing a substrate, a substrate is prepared. In this embodiment, as shown in FIG. 5(a), a plurality of substrates W (for example, 50 to 150 substrates) including a base 101 are loaded on a boat WB, and the boat WB is inserted into the processing vessel 20 from below, thereby carrying the plurality of substrates W into the processing vessel 20. Next, the opening at the lower end of the outer tube 22 is closed with the lid 28 to make the processing vessel 20 an enclosed space. In this state, the processing vessel 20 is evacuated to maintain a predetermined reduced pressure atmosphere, and the power supplied to the heaters 81A to 81F of the heating unit 80 is controlled to raise the substrate temperature and maintain it at the process temperature, and the boat WB is rotated. The base 101 may be, for example, a SiO2 film.

[0028] In the step S2 of forming a silicon film having a convex thickness distribution, a silicon (Si) film having a convex thickness distribution is formed on an underlayer as shown in FIG. 6(a). A convex thickness distribution is a distribution in which the film thickness is thicker at the center than at the periphery of the substrate. In this embodiment, a process gas containing Si2H6 and not containing H2 is supplied from gas discharge holes 41A, 42A, and 43A to form a silicon film 102 on each underlayer 101 of a plurality of substrates W mounted on a boat WB. As a result, a silicon film 102 having a convex thickness distribution can be formed on the underlayer 101 as shown in FIG. 5(b).

[0029] In the step S3 of forming a silicon film having a concave thickness distribution, as shown in FIG. 6(b), a silicon (Si) film having a concave thickness distribution is formed on the underlayer. The concave thickness distribution is a distribution in which the thickness is thinner at the center of the substrate than at the periphery. In this embodiment, a process gas containing Si2H6 and H2 (an example of an additive gas) is supplied from the gas discharge holes 41A, 42A, and 43A, and a silicon film 103 is formed on each silicon film 102 of a plurality of substrates W mounted on the boat WB. As a result, as shown in FIG. 5(c), the silicon film 103 is formed with a relatively thinner thickness at the center of the substrate W where the silicon film 102 is thicker, and the silicon film 103 is formed with a relatively thicker thickness at the periphery of the substrate W where the silicon film 102 is thinner. As a result, a silicon film (silicon film 102 and silicon film 103) with high (uniform) in-plane thickness can be formed.

[0030] As described above, according to the embodiment, the silicon film 102 having a convex film thickness distribution is formed on the base 101, and then the silicon film 103 having a concave film thickness distribution is formed on the silicon film 102. As a result, the silicon film 103 is formed to be relatively thinner in thickness at the center where the silicon film 102 is thicker, and the silicon film 103 is formed to be relatively thicker in thickness at the periphery where the silicon film 102 is thinner. As a result, a silicon film (silicon film 102 and silicon film 103) with high in-plane uniformity in film thickness can be formed.

[0031] Furthermore, according to the embodiment, the ratio of the film thickness at the center of the substrate W to the film thickness at the peripheral portion can be adjusted by controlling the ratio of the time for performing step S2 for forming a silicon film having a convex film thickness distribution to the time for performing step S3 for forming a silicon film having a concave film thickness distribution. For example, the relatively longer the time for performing step S2 for forming a silicon film having a convex film thickness distribution, the thicker the film thickness of the silicon film at the center relative to the peripheral portion of the substrate W can be. Also, for example, the relatively longer the time for performing step S3 for forming a silicon film having a concave film thickness distribution, the thinner the film thickness of the silicon film at the center relative to the peripheral portion of the substrate W can be. Thus, according to the embodiment, the in-plane distribution of the film thickness of the silicon film can be controlled.

[0032] In the above embodiment, the step S2 of forming a silicon film having a convex thickness distribution is followed by the step S3 of forming a silicon film having a concave thickness distribution, but the order of steps S2 and S3 is not limited to this. For example, the step S2 of forming a silicon film having a convex thickness distribution may be performed after the step S3 of forming a silicon film having a concave thickness distribution. Also, for example, the step S2 of forming a silicon film having a convex thickness distribution and the step S3 of forming a silicon film having a concave thickness distribution may be performed repeatedly.

[0033] In the above embodiment, the silicon film forming method includes a step S2 of forming a silicon film having a convex film thickness distribution and a step S3 of forming a silicon film having a concave film thickness distribution, but the present disclosure is not limited thereto. The silicon nitride film forming method of the embodiment may include two or more steps performed under different processing conditions for the in-plane distribution of the film thickness when the silicon film is deposited. For example, the silicon film forming method of the embodiment may include two or more steps performed under different processing conditions for the same type of processing gas and different flow rates of the processing gas. For example, the silicon film forming method of the embodiment may include two or more steps performed under different processing conditions for the same type of processing gas and different processing pressures. For example, the silicon film forming method of the embodiment may include two or more steps performed under different processing conditions for two or more of the type of processing gas, the flow rate of the processing gas, and the processing pressure.

[0034] [Example] First, an example in which the in-plane uniformity of the thickness of a silicon film formed by a silicon film forming method having two steps using different types of process gases is evaluated will be described together with a comparative example.

[0035] In Example 1, a silicon wafer with a diameter of 300 mm on which a SiO2 film was formed was prepared. Next, in the above-mentioned processing device 1, a silicon film was formed on the SiO2 film by performing step S2 of forming a silicon film having a convex film thickness distribution and step S3 of forming a silicon film having a concave film thickness distribution in this order. Then, the thickness of the silicon film formed on the SiO2 film was measured at multiple positions on the surface of the silicon wafer, and the in-plane range of the silicon film thickness was calculated based on the measured values. The in-plane range is a value obtained by subtracting the minimum value from the maximum value of multiple thicknesses of the silicon film measured on the surface of the silicon wafer, and the smaller the value, the higher the in-plane uniformity.

[0036] The conditions (first process conditions) for step S2 of forming a silicon film having a convex film thickness distribution are as follows.

[0037] Processing gas: Si2H6 (300 sccm from each of gas nozzles 41, 42, and 43) Processing temperature: 380℃ Processing pressure: 360Pa (2.7Torr) Processing time: 39.6 minutes

[0038] The conditions (second process conditions) for step S3 of forming a silicon film having a concave thickness distribution are as follows.

[0039] Process gas : Si2H6 (300sccm from each of gas nozzles 41, 42, and 43) : H2 (1000 sccm from each of the gas nozzles 41, 42, and 43) Processing temperature: 380℃ Processing pressure: 360Pa (2.7Torr) Processing time: 19.0 minutes

[0040] In Example 2, a silicon wafer with a diameter of 300 mm on which a SiO2 film was formed was prepared. Next, in the above-mentioned processing device 1, a silicon film was formed on the SiO2 film by performing step S3 of forming a silicon film having a concave film thickness distribution and step S2 of forming a silicon film having a convex film thickness distribution in this order. Then, the thickness of the silicon film formed on the SiO2 film was measured at multiple positions in the plane of the silicon wafer, and the in-plane range of the thickness of the silicon film was calculated based on the measured values. Note that the conditions of step S2 of forming a silicon film having a convex film thickness distribution (first processing conditions) and the conditions of step S3 of forming a silicon film having a concave film thickness distribution (second processing conditions) are the same as the first processing conditions and the second processing conditions of Example 1, respectively, except for the processing time. The processing time of step S3 of forming a silicon film having a concave film thickness distribution is 33.0 minutes, and the processing time of step S2 of forming a silicon film having a convex film thickness distribution is 33.5 minutes.

[0041] In Comparative Example 1, a silicon wafer having a diameter of 300 mm and a SiO2 film formed on the surface was prepared. Next, in the above-mentioned processing apparatus 1, a silicon film was formed on the SiO2 film by performing only the step S2 of forming a silicon film having a convex film thickness distribution. Then, the thickness of the silicon film formed on the SiO2 film was measured at multiple positions in the surface of the silicon wafer, and the in-surface range of the thickness of the silicon film was calculated based on the measured values. The conditions (first processing conditions) of the step S2 of forming a silicon film having a convex film thickness distribution were the same as the first processing conditions of Example 1 except for the processing time. The processing time of the step S2 of forming a silicon film having a convex film thickness distribution was 50.0 minutes.

[0042] In Comparative Example 2, a silicon wafer having a diameter of 300 mm and a SiO2 film formed on the surface was prepared. Next, in the above-mentioned processing apparatus 1, a silicon film was formed on the SiO2 film by performing only the step S3 of forming a silicon film having a concave film thickness distribution. Then, the thickness of the silicon film formed on the SiO2 film was measured at multiple positions in the surface of the silicon wafer, and the in-surface range of the thickness of the silicon film was calculated based on the measured values. The conditions (second processing conditions) of the step S3 of forming a silicon film having a concave film thickness distribution were the same as the second processing conditions of Example 1 except for the processing time. The processing time of the step S3 of forming a silicon film having a concave film thickness distribution was 120.0 minutes.

[0043] Fig. 7 is a diagram showing the in-plane distribution of the thickness of the silicon film in the examples, showing the results of Example 1, Example 2, Comparative Example 1, and Comparative Example 2. In Fig. 7, the horizontal axis indicates the position [mm], and the vertical axis indicates the thickness [nm] of the silicon film. Note that the position is 0 mm at the center of the wafer, and -150 mm and 150 mm at the outer edge of the wafer.

[0044] As shown in Fig. 7, Comparative Example 1 has a convex distribution in which the film thickness is thicker at the center of the wafer than at the periphery, and Comparative Example 2 has a concave distribution in which the film thickness is thinner at the center of the wafer than at the periphery. In contrast, in Examples 1 and 2, the film thickness is thinner at the center of the wafer than in Comparative Example 1, and thinner at the periphery of the wafer than in Comparative Example 2. In addition, in Examples 1 and 2, the in-plane ranges were 2.05 Å and 1.64 Å, respectively. Meanwhile, in Comparative Example 1 and Comparative Example 2, the in-plane ranges were 2.85 Å and 2.19 Å, respectively.

[0045] From the above results, it was shown that a silicon film with a small in-plane range can be formed by performing step S2 of forming a silicon film with a convex thickness distribution and step S3 of forming a silicon film with a concave thickness distribution. In other words, it was shown that a silicon film with high in-plane uniformity can be formed by performing step S2 of forming a silicon film with a convex thickness distribution and step S3 of forming a silicon film with a concave thickness distribution.

[0046] Next, the results of evaluating the film thickness distribution of the silicon film when the flow rate of Si2H6 and the processing pressure are changed will be described.

[0047] First, a silicon wafer with a diameter of 300 mm having a SiO2 film formed on its surface was prepared. Next, a silicon film was formed on the SiO2 film of the prepared silicon wafer under a plurality of different processing conditions in the processing apparatus 1 described above. The processing conditions were as follows.

[0048] Processing gas: Si2H6 Si2H6 flow rate: 350sccm, 600sccm, 900sccm Processing temperature: 380℃ Processing pressure: 133Pa (1.0Torr), 200Pa (1.5Torr), 267Pa (2.0Torr)

[0049] The Si2H6 flow rate of 350 sccm means that the flow rate of Si2H6 supplied from each of the gas nozzles 41, 42, and 43 is set to 116 sccm. The Si2H6 flow rate of 600 sccm means that the flow rate of Si2H6 supplied from each of the gas nozzles 41, 42, and 43 is set to 200 sccm. The Si2H6 flow rate of 900 sccm means that the flow rate of Si2H6 supplied from each of the gas nozzles 41, 42, and 43 is set to 300 sccm.

[0050] Figures 8 to 10 are diagrams showing the relationship between the Si2H6 flow rate and the process pressure, and the thickness distribution of the silicon film. Figures 8, 9, and 10 show the process pressure dependence of the film thickness distribution when the Si2H6 flow rate is set to 350 sccm, 600 sccm, and 900 sccm, respectively. In Figures 8 to 10, the horizontal axis indicates the position [mm], and the vertical axis indicates the thickness [nm] of the silicon film. The positions are 0 mm at the center of the wafer, and -150 mm and 150 mm at the outer edges of the wafer.

[0051] As shown in Fig. 8, it is understood that the in-plane distribution of the thickness of the silicon film can be controlled by changing the Si2H6 flow rate and the processing pressure. For example, it is understood that a silicon film having a convex thickness distribution can be formed by increasing the Si2H6 flow rate (e.g., 900 sccm) and increasing the processing pressure (e.g., 2.0 Torr). It is also understood that a silicon film having a concave thickness distribution can be formed, regardless of the processing pressure, by decreasing the Si2H6 flow rate (e.g., 350 sccm).

[0052] This result indicates that the in-plane distribution of the silicon film thickness can be controlled by changing the Si2H6 flow rate and the processing pressure.

[0053] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0054] In the above embodiment, the case of controlling the in-plane distribution of the thickness of the silicon film has been described, but the present disclosure is not limited thereto. For example, the present disclosure can be applied to the case of controlling the in-plane distribution of film characteristics other than the thickness of the silicon film, such as the hydrogen concentration in the film.

[0055] In the above embodiment, the processing apparatus is a batch type apparatus that processes a plurality of substrates at once, but the present disclosure is not limited thereto. For example, the processing apparatus may be a single-wafer type apparatus that processes substrates one by one. Also, for example, the processing apparatus may be a semi-batch type apparatus that processes substrates by rotating a plurality of substrates arranged on a turntable in a processing vessel by the turntable, and passing the substrates through an area where a first gas is supplied and an area where a second gas is supplied in sequence. [Explanation of symbols]

[0056] 1 Processing equipment 20 Processing vessel 40 Gas Supply Section 90 Control section

Claims

1. The method includes a step of supplying a process gas including a silicon-containing gas to a substrate to deposit a silicon film, The plurality of steps include two or more steps performed under processing conditions in which the in-plane distribution of film properties during deposition of the silicon film is different; The process conditions include the presence or absence of an additive gas added to the silicon-containing gas. A method for forming a silicon film.

2. The process gas is supplied from the side of the substrate. The method for forming a silicon film according to claim 1 .

3. The additive gas is H ２ It is a gas, The method for forming a silicon film according to claim 1 or 2.

4. The process conditions include a flow rate of the silicon-containing gas. The method for forming a silicon film according to claim 1 .

5. The substrate is accommodated in a processing chamber; The process conditions include a pressure in the process vessel when the silicon-containing gas is supplied. The method for forming a silicon film according to claim 1 .

6. The film characteristic is film thickness; the processing conditions include a condition under which a film thickness at a center portion of the substrate is greater than a film thickness at a peripheral portion of the substrate, and a condition under which a film thickness at a center portion of the substrate is smaller than a film thickness at a peripheral portion of the substrate, The method for forming a silicon film according to claim 1 .

7. The silicon-containing gas is SiH ４ Gas or Si ２ H ６ It is a gas, The method for forming a silicon film according to claim 1 .

8. Repeating the steps. The method for forming a silicon film according to claim 1 .

9. a processing vessel for accommodating a substrate; a gas supply unit for supplying a processing gas including a silicon-containing gas into the processing vessel; A control unit; Equipped with The control unit is The gas supply unit is configured to control the gas supply unit so as to execute a plurality of steps of supplying the processing gas to the substrate accommodated in the processing vessel to deposit a silicon film; The plurality of steps include two or more steps performed under processing conditions in which the in-plane distribution of film properties during deposition of the silicon film is different; The process conditions include the presence or absence of an additive gas added to the silicon-containing gas. Processing unit.

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