SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To provide a technique that can more appropriately replace deionized water with IPA solution on multiple substrates.SOLUTION: A substrate processing apparatus 10 is a substrate processing apparatus that performs batch processing for a plurality of substrates W. The substrate processing apparatus 10 comprises a processing tank 2, a liquid supply pipe 311, a first liquid drain pipe 321, and a discharge pipe 61. The processing tank 2 stores an IPA solution, which is an isopropyl alcohol solution, and a carrier C containing the plurality of substrates W is immersed in the IPA solution. The liquid supply pipe 311 supplies the IPA solution to the processing tank 2. The first liquid drain pipe 321 discharges the IPA solution from the processing tank 2. The discharge pipe 61 is located above the processing tank 2 and discharges IPA vapor, which is isopropyl alcohol vapor.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Conventionally, batch-type substrate processing apparatuses that process a plurality of substrates at once have been proposed (for example, Patent Documents 1 and 2). The substrate processing apparatus of Patent Document 1 includes a processing tank, a first discharge nozzle, a second discharge nozzle, and a discharge section. The first discharge nozzle supplies a processing liquid to the processing tank. As a result, the processing liquid is stored in the processing tank. The processing liquid is, for example, pure water. A carrier that contains a plurality of substrates is carried into the processing tank. As a result, the plurality of substrates are immersed in the processing liquid, and processing according to the processing liquid is performed on the plurality of substrates at once.

[0003] The second discharge nozzle is disposed vertically above the processing tank and discharges vapor of an organic solvent. The vapor of the organic solvent comes into contact with the liquid surface of the processing liquid stored in the processing tank and liquefies, forming a liquid film of the organic solvent on the liquid surface. The organic solvent is a liquid that is more volatile than the processing liquid, and is, for example, an isopropyl alcohol liquid (IPA liquid).

[0004] The discharge unit discharges the processing liquid from the processing tank. As a result, the liquid level of the processing liquid (liquid film of organic solvent) in the processing tank drops over time. At this time, the liquid film of organic solvent comes into contact with the substrates successively from above. As a result, the processing liquid on the surfaces of the substrates is replaced with the organic solvent successively from above. The substrate processing apparatus then supplies high-temperature gas for drying toward the multiple substrates to dry the carrier and the substrates.

[0005] The substrate processing apparatus of Patent Document 2 includes an IPA tank. IPA liquid is stored in the IPA tank. A cassette containing multiple substrates is immersed in the IPA liquid. This immersion allows the pure water adhering to the substrates to be replaced with the IPA liquid. The cassette stored in the IPA tank is then transported to a centrifugal dryer. The centrifugal dryer dries the cassette and the multiple substrates. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2019-160954 A [Patent Document 2] Japanese Patent Application Publication No. 5-206096 Summary of the Invention [Problem to be solved by the invention]

[0007] In recent years, substrates that are difficult to dry have appeared. For example, MEMS (microelectromechanical systems) devices are becoming more miniaturized, layered, and three-dimensional as their performance improves. A three-dimensional structure is formed on the surface of the substrate during the manufacture of the device, and a space may be formed inside the three-dimensional structure. If pure water gets into the internal space of such a three-dimensional structure, it is difficult to dry the substrate. This is because the pure water is difficult to discharge from the internal space, and it is difficult to replace the pure water with IPA liquid.

[0008] Such substrates cannot be adequately processed by the substrate processing apparatuses of Patent Documents 1 and 2. In other words, the pure water adhering to the substrate cannot be adequately replaced with the IPA liquid.

[0009] Therefore, an object of the present application is to provide a technique that can more appropriately replace the pure water on multiple substrates with IPA liquid. [Means for solving the problem]

[0010] A first aspect of the substrate processing apparatus is a substrate processing apparatus for processing a plurality of substrates collectively, the substrate processing apparatus comprising: a processing tank for storing an IPA liquid, which is an isopropyl alcohol liquid, and in which a carrier accommodating the plurality of substrates is immersed in the IPA liquid; a liquid supply pipe for supplying the IPA liquid to the processing tank; a first liquid drain pipe for discharging the IPA liquid from the processing tank; and a discharge pipe provided above the processing tank for discharging IPA vapor, which is isopropyl alcohol vapor. a circulation pipe connected to the processing tank and circulating the IPA liquid; and a dispersion plate provided between a downstream port of the circulation pipe connected to a bottom of the processing tank and the carrier carried into the processing tank. Equipped with The dispersion plate is smaller than a lower opening provided at the lower part of the carrier. .

[0014] Substrate processing equipment 2 The embodiment is 1 of The substrate processing apparatus according to this embodiment further includes a storage tank that stores the IPA liquid recovered from the processing tank through the first drain pipe, and an upstream end of the liquid supply pipe is connected to the storage tank.

[0015] Substrate processing equipment 3 The embodiment is 2 The substrate processing apparatus according to this aspect further includes a sensor for measuring a moisture concentration in the storage tank, a second drainage pipe for discharging the IPA liquid in the storage tank, and a new liquid pipe for supplying new IPA liquid to the storage tank.

[0016] Substrate processing equipment 4 The aspects are as follows: 3 The substrate processing apparatus according to any one of the above aspects further comprises a rocking mechanism that rocks the carrier in the processing tank.

[0017] Substrate processing equipment 5 The aspects are as follows: 4 The substrate processing apparatus according to any one of the above aspects further comprises a push-up mechanism provided inside the processing tank for supporting the plurality of substrates in a state in which the substrates are lifted from the carrier.

[0018] A first aspect of a substrate processing method includes: 1. A substrate processing apparatus comprising a chamber having a housing in which a processing tank is disposed and a lid capable of closing / opening an opening of the housing, A substrate processing method for collectively processing a plurality of substrates, comprising the steps of: an IPA liquid supplying step of supplying an IPA liquid, which is an isopropyl alcohol liquid, to the processing tank while the opening is closed with the lid; and after the IPA liquid supplying step is completed, A carrier containing the plurality of substrates Carry it into the treatment tank , The carrier is In the treatment tank, The above A step of immersing in an IPA liquid, and after the step of immersing, The IPA liquid is discharged from the processing tank while the opening is closed with the lid, an exposing step of exposing the carrier and the plurality of substrates from the IPA liquid; With the opening closed by the lid, Discharge pipe RaiA post-IPA vapor supply process supplies IPA vapor, which is isopropyl alcohol vapor. an inert gas supplying step of supplying an inert gas into the chamber while the opening is closed by the lid after the post-IPA vapor supplying step; and a carrying-out step of carrying the carrier out of the chamber while the opening is opened by the lid after the inert gas supplying step. Equipped with.

[0019] A second aspect of the substrate processing method is the substrate processing method according to the first aspect, further comprising a piping heating step of discharging an inert gas heated by a heater from the discharge pipe before the post-IPA vapor supply step.

[0021] The first method for processing a substrate 3 The first aspect is or No. 2 In the substrate processing method according to the aspect, the immersion step includes a circulation step of circulating the IPA liquid through a circulation pipe connected to the processing tank while the carrier is immersed in the IPA liquid in the processing tank.

[0022] The first method for processing a substrate 4 The embodiment is 3 The substrate processing method according to the aspect of the present invention further comprises a pre-circulation step of circulating the IPA liquid through the circulation pipe before the carrier is carried into the processing bath.

[0023] The first method for processing a substrate 5 The embodiment is 3 Or 4 In the substrate processing method according to the aspect of the present invention, the immersion step is performed in parallel with the circulation step, and further includes an IPA vapor supply step of discharging the IPA vapor from the discharge pipe.

[0024] The first method for processing a substrate 6 The aspects are as follows: 5 The substrate processing method according to any one of the above aspects further includes a measuring step of measuring a moisture concentration in a storage tank that stores the IPA liquid recovered from the processing tank, a discharging step of discharging the IPA liquid in the storage tank when the moisture concentration is equal to or higher than a tolerance value, and a new IPA liquid supplying step of supplying new IPA liquid to the storage tank after the discharging step. A sixth aspect of the substrate processing apparatus is a substrate processing apparatus for processing a plurality of substrates simultaneously, comprising: a processing tank for storing an IPA liquid which is an isopropyl alcohol liquid, and in which a carrier containing the plurality of substrates is immersed in the IPA liquid; a chamber having a housing in which the processing tank is disposed and a lid which can close / open an opening of the housing; a supply pipe for supplying the IPA liquid to the processing tank; a first drain pipe for discharging the IPA liquid from the processing tank; a discharge pipe provided above the processing tank for discharging IPA vapor which is isopropyl alcohol vapor; and a control unit, wherein the control unit controls the substrate processing method according to any one of the first to sixth aspects to be performed. A seventh aspect of the substrate processing method is a substrate processing method for processing a plurality of substrates collectively, comprising: an immersion process for immersing a carrier containing the plurality of substrates in an IPA liquid, which is an isopropyl alcohol liquid, in a processing tank; an exposure process for lowering a liquid level of the IPA liquid relative to the carrier and the plurality of substrates after the immersion process, thereby exposing the carrier and the plurality of substrates from the IPA liquid; a post-IPA vapor supply process for supplying IPA vapor, which is isopropyl alcohol vapor, from a discharge pipe to the carrier and the plurality of substrates exposed from the IPA liquid; and a piping heating process for discharging an inert gas heated by a heater from the discharge pipe before the post-IPA vapor supply process. Effect of the Invention

[0025] According to the first aspect of the substrate processing apparatus, a large amount of IPA liquid can be applied to the carrier and the substrates by immersing the substrates in the IPA liquid. Thus, the pure water adhering to the carrier and the substrates can be effectively replaced with the IPA liquid. In addition, the carrier and the substrates can be exposed from the IPA liquid by, for example, discharging the IPA liquid from the processing tank through the first drain pipe. In this state, the pure water remaining on the substrates after immersion in the IPA liquid can be replaced with the IPA liquid by supplying the IPA vapor to the carrier and the substrates. In other words, the two-stage process of immersing the substrates in the IPA liquid and supplying the IPA vapor can more appropriately replace the pure water adhering to the carrier and the substrates with the IPA liquid.

[0027] Moreover, The flow of IPA liquid supplied from the downstream port of the circulation pipe can be spread by the dispersion plate, allowing the IPA liquid to flow more evenly over multiple substrates.

[0028] Moreover, The IPA liquid supplied from the downstream port of the circulation pipe flows from the periphery of the dispersion plate into the lower opening of the carrier. This allows the IPA liquid to flow over a wider area over the multiple substrates housed in the carrier. This allows the IPA liquid to flow more uniformly over the multiple substrates.

[0029] Substrate processing equipment 2 According to this aspect, the IPA liquid can be supplied from the storage tank to the processing tank, and the IPA liquid can be recovered from the processing tank to the storage tank, thereby making it possible to reuse the IPA liquid.

[0030] Substrate processing equipment 3 According to the aspect, when a carrier housing a plurality of substrates with pure water attached thereto is immersed in the IPA liquid in the processing tank, the moisture concentration in the processing tank increases. Since the liquid in the processing tank is collected in the storage tank, the moisture concentration in the storage tank increases every time the carrier is processed.

[0031] The second drain pipe can drain the old liquid in the reservoir tank, and the new liquid pipe can supply new IPA liquid to the reservoir tank, that is, a liquid exchange process can be performed on the reservoir tank.

[0032] Moreover, since the sensor measures the moisture concentration in the storage tank, it is possible to monitor the moisture concentration in the storage tank and perform liquid exchange. Specifically, when the measured moisture concentration becomes high, the liquid in the storage tank can be exchanged. This allows IPA liquid with a low moisture concentration to be supplied from the storage tank to the processing tank.

[0033] Substrate processing equipment 4 According to this aspect, the processing efficiency for a plurality of substrates can be improved.

[0034] Substrate processing equipment 5 According to this aspect, the gap between the side surface of each substrate and the inner surface of the carrier can be widened, so that the IPA liquid can easily flow through the gap. Therefore, the replacement of the pure water with the IPA liquid can be promoted even in the gap.

[0035] First aspect of the substrate processing method and a sixth aspect of the substrate processing apparatus According to the method, a large amount of IPA liquid can be applied to the carrier and the multiple substrates in the immersion process. Therefore, the pure water adhering to the carrier and the multiple substrates can be effectively replaced with IPA liquid. Furthermore, the post-IPA vapor supply process can replace the pure water remaining on the substrates even after the immersion process with IPA liquid. In other words, the two-stage process of immersion in IPA liquid and supply of IPA vapor can more appropriately replace the pure water adhering to the carrier and the multiple substrates with IPA liquid.

[0036] According to the second aspect of the substrate processing method, the discharge pipe can be heated before the IPA vapor is supplied, so that condensation of the IPA vapor can be suppressed.

[0038] The first method for processing a substrate 3rd and 7thAccording to this aspect, a liquid flow can be formed in the processing tank, making it easier for the IPA liquid to act on the surfaces of a plurality of substrates, and further facilitating the replacement of pure water with the IPA liquid.

[0039] The first method for processing a substrate 4 According to this aspect, the gas in the circulation piping can be discharged before the immersion step.

[0040] The first method for processing a substrate 5 According to this embodiment, a decrease in the amount of circulating IPA liquid can be suppressed.

[0041] The first method for processing a substrate 6 According to this embodiment, the IPA liquid having a low water concentration can be supplied from the storage tank to the processing tank. [Brief description of the drawings]

[0042] [Figure 1] FIG. 1 is a diagram illustrating an example of a configuration of a substrate processing apparatus according to a first embodiment. [Diagram 2] 2 is a diagram illustrating an example of an internal configuration of a control unit. FIG. [Diagram 3] 10 is a flowchart showing an example of an operation of the substrate processing apparatus. [Figure 4] 10 is a flowchart showing a specific example of an immersion step. [Diagram 5] FIG. 2 is a diagram illustrating an example of a substrate processing apparatus. [Figure 6] FIG. 2 is a diagram illustrating an example of a substrate processing apparatus. [Figure 7] FIG. 2 is a diagram illustrating an example of a substrate processing apparatus. [Figure 8] FIG. 2 is a diagram illustrating an example of a substrate processing apparatus. [Figure 9] 11 is a timing chart showing an example of a circulation step, an exposure step, an IPA vapor supply step, and a post-IPA vapor supply step. [Figure 10] 10 is a flowchart showing an example of a liquid exchange process. [Figure 11]FIG. 11 is a diagram illustrating an example of a configuration of a substrate processing apparatus according to a second embodiment. [Figure 12] FIG. 2 is a perspective view illustrating an example of a treatment tank, a dispersion plate, and a circulation pipe. [Figure 13] 10 is a plan view for illustrating an example of the size relationship between a lower opening of a carrier, a dispersion plate, and a downstream opening of a circulation pipe. FIG. [Figure 14] FIG. 13 is a diagram illustrating an example of a configuration of a substrate processing apparatus according to a third embodiment. [Figure 15] 10A and 10B are diagrams illustrating an example of a state in which a carrier swings. [Figure 16] FIG. 13 is a diagram illustrating an example of a configuration of a substrate processing apparatus according to a fourth embodiment. [Figure 17] 11 is a diagram for explaining an example of the positional relationship between a push-up mechanism, a carrier, and a substrate. FIG. [Figure 18] 11A and 11B are diagrams for explaining an example of a positional relationship between a push-up mechanism, a carrier, and a substrate according to a comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0043] Hereinafter, the embodiments will be described with reference to the attached drawings. The drawings are shown in a schematic manner, and for the convenience of explanation, the configurations are omitted and simplified as appropriate. The size and positional relationship of the configurations shown in the drawings are not necessarily described accurately, and may be changed as appropriate. In each drawing, in order to clarify the positional relationship of the components, an XYZ orthogonal coordinate system is appropriately attached, with the Z axis direction being the vertical direction and the XY plane being the horizontal plane. Hereinafter, one side in the Z axis direction (here, the vertical upper side) is called the +Z side, and the other side in the Z axis direction (here, the vertical lower side) is also called the -Z side. The same applies to the X axis and the Y axis.

[0044] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

[0045] In addition, in the description below, even if ordinal numbers such as "first" or "second" are used, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not limited to the ordering that may result from these ordinal numbers.

[0046] Expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) not only strictly indicate the positional relationship, but also indicate a state in which the two are relatively displaced in terms of angle or distance within a range in which a tolerance or similar function is obtained, unless otherwise specified. Expressions indicating an equal state (e.g., "same," "equal," "homogeneous," etc.) not only strictly indicate a state in which the two are quantitatively equal, but also indicate a state in which there is a difference in which a tolerance or similar function is obtained, unless otherwise specified. Expressions indicating a shape (e.g., "square shape" or "cylindrical shape," etc.) not only strictly indicate the shape geometrically, but also indicate a shape having, for example, irregularities or chamfers, within a range in which a similar effect is obtained, unless otherwise specified. The expressions "comprise," "include," "have," "includes," "includes," or "has" a component are not exclusive expressions that exclude the presence of other components. The expression "at least one of A, B, and C" includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0047] <First embodiment> 1 is a diagram illustrating an example of a configuration of a substrate processing apparatus 10 according to a first embodiment. The substrate processing apparatus 10 is a batch-type processing apparatus that processes a plurality of substrates W collectively.

[0048] The substrate W to be processed has a flat plate shape, and in the example of FIG. 1, has a substantially circular shape when viewed along the thickness direction of the substrate W. The diameter of the substrate W is, for example, about 200 mm, and the thickness is, for example, about several hundred μm. The substrate W is, for example, a semiconductor substrate. As the semiconductor substrate, for example, a silicon substrate or a silicon carbide substrate can be used. Various three-dimensional structures can be formed on the main surface of the substrate W. The substrate W is, for example, a substrate in the middle of manufacturing a MEMS device. A space into which a liquid can enter can be formed inside this three-dimensional structure.

[0049] A plurality of substrates W are transported into the substrate processing apparatus 10 while being accommodated in a carrier C. The carrier C has an internal space that opens at least to the +Z side and the -Z side, and the plurality of substrates W are accommodated in this internal space. Hereinafter, the opening on the +Z side of the carrier C is referred to as an upper opening C1, and the opening on the -Z side of the carrier C is referred to as a lower opening C2. The carrier C is formed of a fluorine-based resin such as PFA (perfluoroalkoxyalkane).

[0050] The multiple substrates W are stored in an upright position in the internal space of the carrier C, lined up along the normal direction of the main surface of the substrate W (i.e., the thickness direction of the substrate W: here, the Y-axis direction). The upright position is a position in which the normal direction (thickness direction) of the main surface of the substrate W is along the horizontal direction. The number of substrates W stored in the carrier C is not particularly limited, but is, for example, about several tens of substrates (e.g., 25 substrates). Outside the substrate processing apparatus 10, the multiple substrates W are inserted into the carrier C through an upper opening C1 of the carrier C, and are removed from the carrier C through the upper opening C1.

[0051] Here, the multiple substrates W accommodated in the carrier C have been processed in a pre-processing step before being carried into the substrate processing apparatus 10, and pure water is attached to the carrier C and the multiple substrates W. The carrier C is carried into the substrate processing apparatus 10 with the pure water attached. The substrate processing apparatus 10 replaces the pure water (cleaning liquid) attached to the carrier C and the multiple substrates W with an isopropyl alcohol liquid (hereinafter referred to as an IPA liquid: an organic solvent) that has a lower latent heat of vaporization, and then dries the carrier C and the multiple substrates W. Therefore, the substrate processing apparatus 10 can also be said to be a drying apparatus.

[0052] The substrate processing apparatus 10 includes a chamber 1 , a processing tank 2 , an IPA liquid unit 3 , and a gas supply unit 5 .

[0053] <Chamber> The chamber 1 includes a housing 11 and a lid 12. The housing 11 has a box-like shape that opens on the +Z side. The lid 12 is attached to the end (upper end) of the housing 11 on the +Z side so as to be openable and closable. The opening and closing of the lid 12 is controlled by a control unit 90, and when the lid 12 is closed, the opening on the +Z side of the chamber 1 is closed.

[0054] <Treatment tank> A processing tank 2 is disposed inside the chamber 1. The processing tank 2 has an opening on the +Z side, and a carrier C is carried into the processing tank 2 through this opening. In the example of Fig. 1, the processing tank 2 is fixed to the housing 11 via a fixing member (not shown) in a state separated from the bottom of the housing 11.

[0055] A plurality of substrates W are conveyed into the chamber 1 by a conveying mechanism (not shown) while being accommodated in a carrier C. Specifically, the carrier C passes through the opening of the housing 11 when the lid 12 is open and is carried into the inside of the processing tank 2. In the example of FIG. 1, the substrate processing apparatus 10 is provided with a mounting portion 20. The mounting portion 20 includes a mounting table 21, and the mounting table 21 is provided inside the processing tank 2 and the carrier C is mounted thereon. In the example of FIG. 1, the mounting table 21 is connected to the chamber 1 in a state of being suspended by a connecting member 22. The mounting table 21 is configured such that liquid can pass in the Z-axis direction and may be configured, for example, in a mesh shape.

[0056] <Outline of IPA Liquid Unit> The IPA liquid unit 3 includes an IPA liquid supply portion 31 and an IPA liquid discharge portion 32.

[0057] As will be described in detail later, the IPA liquid supply portion 31 supplies IPA liquid to the processing tank 2. As a result, IPA liquid is stored in the processing tank 2. The IPA liquid supply portion 31 supplies IPA liquid to the processing tank 2 in an amount sufficient for at least the carrier C to be immersed in the IPA liquid. When the carrier C is immersed in the IPA liquid, the carrier C and the plurality of substrates W can be rinsed collectively. In other words, the pure water adhering to the carrier C and the plurality of substrates W can be collectively replaced with IPA liquid. Since the entire plurality of substrates W are immersed in the IPA liquid, even when a three-dimensional structure such as MEMS is provided on the surface of the substrate W, the IPA liquid easily enters the internal space of the three-dimensional structure. Therefore, the replacement of pure water with IPA liquid in the internal space can be promoted.

[0058] In the example of FIG. 1, the IPA liquid unit 3 further includes an IPA liquid circulation portion 33. As will be described in detail later, the IPA liquid circulation portion 33 circulates IPA liquid with the processing tank 2 as a part of the circulation path. As a result, inside the processing tank 2, a flow of IPA liquid from the upstream side to the downstream side of the circulation path is generated, making it easier for the IPA liquid to act on the plurality of substrates W. Therefore, the replacement of pure water adhering to the substrate W with IPA liquid can be further promoted.

[0059] The IPA liquid discharge section 32 discharges the IPA liquid stored in the treatment tank 2 to the outside of the treatment tank 2, as will be described in detail later. For example, the IPA liquid discharge section 32 discharges the IPA liquid in the treatment tank 2 after immersing the carrier C in the IPA liquid for a predetermined time. Hereinafter, detailed examples of each part of the IPA liquid unit 3 will be described.

[0060] <IPA liquid supply section> In the example of FIG. 1, the IPA liquid supply section 31 includes a liquid supply pipe 311, a pump 312, a valve 314, and a valve 315. The liquid supply pipe 311 is a pipe for supplying IPA liquid to the treatment tank 2. In the example of FIG. 1, it is composed of pipes 42, 43, and 44 connected in series to each other.

[0061] The upstream end of the pipe 42 is connected to the storage tank 41. IPA liquid is supplied from a liquid exchange section 8, which will be described later, to the storage tank 41 and stored therein. The upstream end of the pipe 42 corresponds to the upstream end of the liquid supply pipe 311 and corresponds to a suction port for sucking IPA liquid from the storage tank 41. The downstream end of the pipe 42 is connected to the upstream end of the pipe 43, the downstream end of the pipe 43 is connected to the upstream end of the pipe 44, and the downstream end of the pipe 44 is connected to the treatment tank 2. The downstream end of the pipe 44 corresponds to the downstream end of the liquid supply pipe 311 and can function as a liquid supply port for supplying IPA liquid to the treatment tank 2. In the example of FIG. 1, the downstream end (liquid supply port) of the pipe 44 opens at the bottom of the treatment tank 2. In this way, the liquid supply pipe 311 connects the treatment tank 2 and the storage tank 41 to each other.

[0062] The pump 312 is provided in the liquid supply pipe 311. In the example of FIG. 1, the pump 312 is provided in the pipe 43.

[0063] In the example of FIG. 1, a filter 313 is provided in the liquid supply pipe 311. As a more specific example, the filter 313 is provided in the pipe 43. The filter 313 captures at least one of particles and metal ions in the IPA liquid flowing through the liquid supply pipe 311. As the filter 313, for example, Protego (registered trademark) Plus can be adopted.

[0064] Valves 314 and 315 are provided in the liquid supply pipe 311. In the example of FIG. 1, valve 314 is provided in pipe 42, and valve 315 is provided in pipe 43. When both valves 314 and 315 are opened and pump 312 operates, the IPA liquid in the storage tank 41 is supplied to the processing tank 2 through the liquid supply pipe 311.

[0065] <IPA liquid discharge section> In the example of FIG. 1, the IPA liquid discharge section 32 includes a first drain pipe 321, a valve 322, and a valve 323. The first drain pipe 321 is a pipe for discharging the IPA liquid in the processing tank 2 to the outside of the processing tank 2. In the example of FIG. 1, it is composed of pipes 44, 45, 46, and 47 connected in series with each other. Since pipe 44 also functions as a part of the liquid supply pipe 311, pipe 44 is shared by the liquid supply pipe 311 and the first drain pipe 321. Therefore, the connection end of pipe 44 to the processing tank 2 functions not only as a liquid supply port but also as a drain port. The connection point between pipe 44 and pipe 43 is connected to the upstream end of pipe 45, the downstream end of pipe 45 is connected to the upstream end of pipe 46, the downstream end of pipe 46 is connected to the upstream end of pipe 47, and the downstream end of pipe 47 is connected to the storage tank 41. The downstream end of pipe 47 corresponds to the downstream end of the first drain pipe 321 and corresponds to the discharge port for discharging the IPA liquid to the storage tank 41. In this way, the first drain pipe 321 connects the processing tank 2 and the storage tank 41 to each other.

[0066] Valves 322 and 323 are provided in the first drain pipe 321. In the example of FIG. 1, valve 322 is provided in pipe 45, and valve 323 is provided in pipe 47. When both valves 322 and 323 are opened, the IPA liquid stored in the processing tank 2 is recovered into the storage tank 41 through the first drain pipe 321. The storage tank 41 stores the recovered IPA liquid. Thereby, the recovered IPA liquid can be reused for the next treatment of the carrier C. In the example of FIG. 1, since the IPA liquid discharge section 32 recovers the IPA liquid in the processing tank 2 into the storage tank 41, it can be said that the IPA liquid discharge section 32 is an IPA liquid recovery section, the first drain pipe 321 can be said to be a recovery pipe, and the storage tank 41 can be said to be a recovery tank.

[0067] <IPA Liquid Circulation Section> The IPA liquid circulation section 33 circulates the IPA liquid with the treatment tank 2 as part of the circulation path. Here, while allowing the IPA liquid to overflow from the treatment tank 2, the IPA is circulated. The IPA liquid that overflows from the +Z side end of the treatment tank 2 accumulates at the bottom of the chamber 1 along the outer peripheral surface of the treatment tank 2. The IPA liquid circulation section 33 sucks the IPA liquid from the chamber 1 and returns it to the treatment tank 2 again to circulate the IPA liquid.

[0068] In the example of FIG. 1, the IPA liquid circulation section 33 includes a circulation pipe 331, a pump 312, a valve 332, a valve 333, a valve 334, and a valve 315.

[0069] The circulation pipe 331 is a pipe for circulating the IPA liquid. In the example of FIG. 1, it is composed of pipes 49, 46, 48, 43, and 44 that are connected in series with each other. The upstream end of the pipe 49 opens at the bottom of the chamber 1. The upstream end of the pipe 49 corresponds to the upstream end of the circulation pipe 331 and corresponds to the upstream port into which the IPA liquid accumulated at the bottom of the chamber 1 flows. The downstream end of the pipe 49 is connected to the upstream end of the pipe 46. Since the pipe 46 also functions as part of the first drain pipe 321, the pipe 46 is shared by the first drain pipe 321 and the circulation pipe 331. The downstream end of the pipe 46 is connected to the upstream end of the pipe 48, and the downstream end of the pipe 48 is connected to the upstream end of the pipe 43. Since the pipe 43 also functions as part of the liquid supply pipe 311, the pipe 43 is shared by the liquid supply pipe 311 and the circulation pipe 331. Since the pipe 44 also functions as part of the liquid supply pipe 311 and part of the first drain pipe 321, the pipe 44 is shared by the liquid supply pipe 311, the first drain pipe 321, and the circulation pipe 331. The connection end of the pipe 44 connected to the treatment tank 2 also corresponds to the downstream end of the circulation pipe 331 and can function as the downstream port for discharging the IPA liquid to the treatment tank 2. In this way, the circulation pipe 331 connects the chamber 1 and the treatment tank 2 to each other.

[0070] The pump 312 is provided in the pipe 43 that constitutes a part of the circulation pipe 331, and therefore can also be said to be provided in the circulation pipe 331. That is, the pump 312 is used by both the IPA liquid supply unit 31 and the IPA liquid circulation unit 33. Similarly, the filter 313 and the valve 315 can also be said to be provided in the circulation pipe 331. That is, the filter 313 and the valve 315 are also used by both the IPA liquid supply unit 31 and the IPA liquid circulation unit 33.

[0071] Valve 332 is provided in pipe 49, and valves 333 and 334 are provided in pipe 48. Valve 333 is provided in the upstream portion of pipe 48, and valve 334 is provided in the downstream portion of pipe 48.

[0072] In such an IPA liquid circulation unit 33, the valves 332, 333, 334, and 315 are opened and the pump 312 is operated, whereby the IPA liquid accumulated in the chamber 1 flows into the upstream port of the circulation pipe 331 and is supplied again from the downstream port into the processing tank 2 through the circulation pipe 331. The IPA liquid flows from the -Z side to the +Z side inside the processing tank 2, overflows from the end of the +Z side of the processing tank 2, flows toward the bottom of the chamber 1, and flows into the upstream port of the circulation pipe 331 again.

[0073] By such circulation, the IPA liquid flows into the inside of the carrier C from the lower opening C2 of the carrier C inside the processing tank 2, flows to the +Z side between the multiple substrates W, and flows out from the upper opening C1. This makes it easier for the IPA liquid to act on the surfaces of the multiple substrates W, and promotes the replacement of pure water on the surfaces of the substrates W with the IPA liquid.

[0074] In the example of FIG. 1, valves 333 and 334 are provided in the pipe 48. For example, when the IPA liquid is supplied by the IPA liquid supply unit 31, at least the valve 334 is closed. Thereby, the IPA liquid flowing from the liquid supply pipe 311 into the pipe 48 can be blocked by the valve 334 provided at a position close to the liquid supply pipe 311. Therefore, the inflow into the pipe 48 can be more reliably suppressed. Further, when the IPA liquid is discharged by the IPA liquid discharge unit 32, at least the valve 333 is closed. Thereby, the IPA liquid flowing from the first drain pipe 321 into the pipe 48 can be blocked by the valve 333 provided at a position close to the first drain pipe 321. Thereby, the inflow of the IPA liquid into the pipe 48 can be more reliably suppressed.

[0075] <Pipe configuration> Note that the pipe configuration of the IPA liquid unit 3 is not necessarily limited to the embodiment of FIG. 1 and can be changed as appropriate. For example, although a part of the liquid supply pipe 311, the first drain pipe 321, and the circulation pipe 331 are common, they may be configured by separate pipes from each other.

[0076] <Gas supply unit> The gas supply unit 5 supplies gas to the internal space of the chamber 1. The gas supply unit 5 includes an IPA vapor supply unit 51 and an inert gas supply unit 52.

[0077] <IPA vapor supply unit> The IPA vapor supply unit 51 supplies isopropyl alcohol vapor (hereinafter referred to as IPA vapor) to the space on the +Z side (that is, the upper space) of the processing tank 2. The IPA vapor can also be called IPA gas.

[0078] The IPA vapor supply unit 51 includes a discharge pipe 61. The discharge pipe 61 is provided in the upper space of the processing tank 2 in the chamber 1 and has a discharge port 61a that opens in the chamber 1. The IPA vapor supply unit 51 discharges IPA vapor from the discharge port 61a.

[0079] 1, a pair of discharge pipes 61 are provided as the discharge pipe 61. The pair of discharge pipes 61 are provided at an interval from each other in the X-axis direction. The height positions of the pair of discharge pipes 61 may be the same or different from each other.

[0080] The discharge pipe 61 has an elongated shape extending along, for example, the Y-axis direction. The discharge pipe 61 may be provided with a plurality of discharge ports 61a. The plurality of discharge ports 61a are arranged at intervals along the Y-axis direction. In the example of FIG. 1, the discharge ports 61a open toward the inside of the processing tank 2. As a specific example, the discharge direction of the discharge port 61a of the discharge pipe 61 on the -X side is a diagonal direction toward the +X side and the -Z side, and the discharge direction of the discharge port 61a of the discharge pipe 61 on the +X side is a diagonal direction toward the -X side and the -Z side.

[0081] The IPA vapor supply unit 51 further includes a vapor supply pipe 511 and a valve 512. The vapor supply pipe 511 is a pipe for supplying IPA vapor to the discharge pipe 61, and in the example of FIG. 1, is composed of a pipe 62 and a pipe 63 connected in series to each other. The pipe 62 branches midway, and each downstream end is connected to each of the pair of discharge pipes 61. The upstream end of the pipe 62 is connected to the downstream end of the pipe 63, and the upstream end of the pipe 63 is connected to an IPA vapor supply source 513. The IPA vapor supply source 513 supplies IPA vapor to the upstream end of the pipe 63. In this manner, the vapor supply pipe 511 connects the discharge pipe 61 and the IPA vapor supply source 513 to each other.

[0082] 1, the valve 512 is provided on the pipe 63. When the valve 512 is opened, IPA vapor is supplied from the IPA vapor supply source 513 through the vapor supply pipe 511 to the discharge pipe 61, and is discharged from the discharge port 61a of the discharge pipe 61. When the valve 512 is closed, the discharge of the IPA vapor stops.

[0083] 1, a heater 65 is provided in the vapor supply pipe 511. In the example of Fig. 1, the heater 65 is provided in the pipe 62. The heater 65 heats the IPA vapor flowing through the pipe 62. The heater 65 may be, for example, an electric resistance heater including a heating wire. The heater 65 heats the IPA vapor, thereby making it possible to suppress condensation of the IPA vapor.

[0084] The IPA vapor supply source 513 may supply not only the IPA vapor but also a carrier gas. The carrier gas is an inert gas, and includes at least one of a rare gas such as argon gas and nitrogen gas. In this case, a mixture of the IPA vapor and the carrier gas is discharged from the discharge port 61a of the discharge pipe 61.

[0085] In the example of FIG. 1, the IPA vapor supply source 513 includes a storage tank 53 and a heater 54. The IPA liquid is stored in the storage tank 53. The storage tank 53 is, for example, a sealed storage tank. The heater 54 heats the IPA liquid stored in the storage tank 53. The heater 54 may be, for example, an electric resistance heater including a heating wire. In the example of FIG. 1, the heater 54 is provided on the lower surface of the bottom of the storage tank 53. The IPA liquid in the storage tank 53 is heated by the heater 54 and evaporated. Therefore, the space on the +Z side of the liquid level of the IPA liquid in the storage tank 53 is filled with IPA vapor.

[0086] The upstream end (upstream opening) of the vapor supply pipe 511 opens on the +Z side of the liquid level of the IPA liquid in the storage tank 53, and the IPA vapor in the storage tank 53 flows into the inside of the vapor supply pipe 511 from the upstream opening of the vapor supply pipe 511.

[0087] 1, the storage tank 53 is connected to an inert gas supply source 523 via a carrier gas supply pipe 55. The inert gas supply source 523 supplies an inert gas as a carrier gas to the upstream end of the carrier gas supply pipe 55. The downstream end of the carrier gas supply pipe 55 opens on the +Z side of the liquid level of the IPA liquid in the storage tank 53.

[0088] A valve 56 is provided on the carrier gas supply pipe 55. When the valve 56 is opened, the carrier gas from the inert gas supply source 523 is supplied into the storage tank 53 through the carrier gas supply pipe 55, and flows into the upstream opening of the vapor supply pipe 511 together with the IPA vapor in the storage tank 53. The carrier gas flows through the vapor supply pipe 511 together with the IPA vapor, and is discharged from the discharge port 61a of the discharge pipe 61.

[0089] As described above, the IPA vapor supply unit 51 can supply IPA vapor and carrier gas to the upper space in the chamber 1. As will be described in detail later, the IPA vapor supply unit 51 supplies IPA vapor after the IPA liquid discharge unit 32 has discharged the IPA liquid from the processing tank 2. The IPA vapor flows toward the carrier C and the multiple substrates W, and acts on the surface of the carrier C and the surfaces of the multiple substrates W. This allows the pure water remaining on the surface of the carrier C and the surfaces of the substrates W to be replaced with the IPA liquid.

[0090] <Inert gas supply section> The inert gas supply unit 52 supplies an inert gas for drying to the space above the processing tank 2. The inert gas supply unit 52 supplies the inert gas for drying toward the carrier C and the plurality of substrates W, thereby accelerating the evaporation of the IPA liquid adhering to the carrier C and the plurality of substrates W. This allows the carrier C and the plurality of substrates W to be dried quickly.

[0091] 1, the inert gas supply unit 52 includes an inert gas supply pipe 521 and a valve 522. The inert gas supply pipe 521 is a pipe for supplying an inert gas to the discharge pipe 61, and in the example of FIG. 1, is composed of a pipe 62 and a pipe 64 connected in series to each other. Since the pipe 62 also functions as a part of the steam supply pipe 511, the pipe 62 is shared by the steam supply pipe 511 and the inert gas supply pipe 521. The upstream end of the pipe 62 is also connected to the downstream end of the pipe 64, and the upstream end of the pipe 64 is connected to an inert gas supply source 523. The inert gas supply source 523 supplies the inert gas to the upstream end of the pipe 64.

[0092] 1, the valve 522 is provided in the piping 64. When the valve 522 is opened, the inert gas is supplied from the inert gas supply source 523 through the inert gas supply pipe 521 to the discharge pipe 61, and is discharged from the discharge port 61a of the discharge pipe 61. When the valve 522 is closed, the discharge of the inert gas stops.

[0093] 1, the heater 65 is provided in the pipe 62, and therefore, it can be said that the heater 65 is provided in the inert gas supply pipe 521. In other words, the heater 65 is shared by the IPA vapor supply unit 51 and the inert gas supply unit 52. The heater 65 can heat the inert gas flowing through the pipe 62. This allows the high-temperature inert gas to be supplied to the carrier C and the multiple substrates W. Therefore, the carrier C and the multiple substrates W can be quickly dried.

[0094] <Piping configuration> The piping configuration of the gas supply unit 5 is not necessarily limited to that shown in Fig. 1 and can be changed as appropriate. For example, in the example shown in Fig. 1, the discharge pipe 61 is shared by the IPA vapor supply unit 51 and the inert gas supply unit 52, but the discharge pipe 61 for the IPA vapor supply unit 51 and the discharge pipe 61 for the inert gas supply unit 52 may be provided separately.

[0095] <Gas exhaust section> In the example of FIG. 1, the substrate processing apparatus 10 further includes a gas exhaust unit 7. The gas exhaust unit 7 exhausts gas within the chamber 1 to the outside of the chamber 1. The gas exhaust unit 7 includes an exhaust pipe 71 and a valve 72. The upstream end of the exhaust pipe 71 opens within the chamber 1. In the example of FIG. 1, the upstream end of the exhaust pipe 71 is connected to a side wall of the chamber 1. The downstream end of the exhaust pipe 71 is connected to a predetermined exhaust unit outside the chamber 1. The valve 72 is provided in the exhaust pipe 71. When the valve 72 is opened, the gas within the chamber 1 is exhausted to the outside through the exhaust pipe 71. When the valve 72 is closed, the exhaust of the gas stops.

[0096] <Liquid exchange part> In the example of FIG. 1, the substrate processing apparatus 10 further includes a liquid exchanging section 8, which will be described in detail later.

[0097] <Control Unit> Various components within the substrate processing apparatus 10 are controlled by a control unit 90. Specifically, the control unit 90 controls various components such as opening and closing of the lid 12 of the chamber 1, various valves, various pumps, and various heaters.

[0098] FIG. 2 is a functional block diagram showing an example of the internal configuration of the control unit 90. The control unit 90 is an electronic circuit, and has, for example, a data processing unit 91 and a storage medium 92. In the specific example of FIG. 2, the data processing unit 91 and the storage medium 92 are connected to each other via a bus 93. The data processing unit 91 may be, for example, an arithmetic processing device such as a CPU (Central Processor Unit). The storage medium 92 may have a non-transient storage medium (for example, a ROM (Read Only Memory) or a hard disk) 921 and a temporary storage medium (for example, a RAM (Random Access Memory)) 922. The non-transient storage medium 921 may store, for example, a program that specifies the processing to be executed by the control unit 90. The data processing unit 91 executes this program, so that the control unit 90 can execute the processing specified in the program. Of course, some or all of the functions of the control unit 90 may be realized by a hardware circuit.

[0099] <Operation example of substrate processing apparatus> 3 and 4 are flowcharts showing an example of the operation of the substrate processing apparatus 10. Initially, the carrier C has not been loaded into the chamber 1, and no IPA liquid is stored in the processing bath 2. Figures 5 to 8 are diagrams that diagrammatically show an example of the state of the substrate processing apparatus 10 at each step.

[0100] In the example of FIG. 3, first, the inert gas supply unit 52 supplies high-temperature inert gas into the chamber 1 (step S1: piping heating step). FIG. 5(a) shows an example of the state of the substrate processing apparatus 10 in step S1. In step S1, the control unit 90 opens the valve 522 and causes the heater 65 to perform a heating operation. As a result, the inert gas from the inert gas supply source 523 is supplied to the discharge pipe 61 through the inert gas supply pipe 521. Since the inert gas is heated by the heater 65, the high-temperature inert gas is supplied to the discharge pipe 61 and discharged from the discharge port 61a of the discharge pipe 61 into the chamber 1.

[0101] This allows the high-temperature inert gas to preheat the piping downstream of the heater 65. When the piping is sufficiently heated, the inert gas supply unit 52 stops the supply of the inert gas. For example, when a first predetermined time has elapsed since the start of step S1, the control unit 90 closes the valve 522 and causes the heater 65 to stop the heating operation.

[0102] Next, an IPA liquid is supplied into the processing tank 2, and the carrier C is immersed in the IPA liquid in the processing tank 2 (step S2: immersion step). Fig. 4 is a flow chart showing an example of a specific operation of the immersion step (step S2).

[0103] In the example of FIG. 4, first, the IPA liquid supply unit 31 supplies the IPA liquid to the processing tank 2 (step S21: IPA liquid supplying step). FIG. 5(b) shows an example of the state of the substrate processing apparatus 10 in step S21. In step S21, the control unit 90 opens the valves 314 and 315 and operates the pump 312. As a result, the IPA liquid in the storage tank 41 is supplied into the processing tank 2 through the liquid supply pipe 311. In the example of FIG. 5(b), the liquid supply pipe 311 is provided with a filter 313, so that impurities including at least one of particles and metal ions in the IPA liquid are captured by the filter 313, and the IPA liquid with fewer impurities is supplied to the processing tank 2.

[0104] As the IPA liquid is supplied to the processing tank 2, the liquid level of the IPA liquid in the processing tank 2 rises over time, and eventually the IPA liquid overflows from the end of the processing tank 2 on the +Z side. The IPA liquid overflowing from the end of the processing tank 2 on the +Z side accumulates at the bottom of the chamber 1.

[0105] When a sufficient amount of IPA liquid is stored in the processing tank 2 and the chamber 1, the IPA liquid supply unit 31 stops supplying the IPA liquid. For example, when a second predetermined time has elapsed since the start of step S21, the control unit 90 closes the valves 314 and 315 and stops the pump 312.

[0106] Next, the IPA liquid circulation unit 33 circulates the IPA liquid (step S22: pre-circulation step). FIG. 6(a) shows an example of the state of the substrate processing apparatus 10 in step S22. In step S22, the control unit 90 opens the valves 332, 333, 334, and 315, and operates the pump 312. As a result, the IPA liquid accumulated at the bottom of the chamber 1 is supplied to the processing tank 2 through the circulation pipe 331. The IPA liquid flows in the processing tank 2 to the +Z side, overflows from the end of the processing tank 2 on the +Z side, and flows back to the bottom of the chamber 1.

[0107] In this manner, the IPA liquid circulates through the processing tank 2, the chamber 1, and the circulation pipe 331, so that gas (e.g., air) initially present inside the circulation pipe 331 is pushed out by the IPA liquid into the processing tank 2, rises in the IPA liquid in the processing tank 2, and is discharged into the chamber 1. That is, the gas in the circulation pipe 331 can be removed by step S22.

[0108] Furthermore, since the filter 313 is provided in the circulation pipe 331, the filter 313 captures impurities in the IPA liquid while the IPA liquid is circulating, thereby making it possible to circulate a cleaner IPA liquid.

[0109] In addition, since the valve 315 is opened and the pump 312 is operated in both steps S21 and S22, it is not necessary to close the valve 315 once and to stop the operation of the pump 312 once when transitioning from step S21 to step S22.

[0110] When the IPA liquid has circulated sufficiently, the IPA liquid circulating unit 33 stops circulating the IPA. For example, when a third predetermined time has elapsed since the start of step S22, the control unit 90 closes the valves 332, 333, 334, and 315, and stops the pump 312.

[0111] Next, the carrier C accommodating the plurality of substrates W is loaded into the chamber 1 (step S23: loading step). FIG. 6(b) shows an example of the state of the substrate processing apparatus 10 in step S23. In step S23, the control unit 90 opens the lid 12, and the transfer mechanism (not shown) loads the carrier C into the chamber 1 through an opening on the +Z side of the housing 11. The transfer mechanism moves the carrier C to the -Z side, thereby loading the carrier C into the processing tank 2 through the opening on the +Z side of the processing tank 2. As a result, the carrier C is immersed in the IPA liquid in the processing tank 2 and placed on the mounting table 21. When loading of the carrier C is completed, the control unit 90 closes the lid 12.

[0112] Next, the IPA liquid circulation unit 33 circulates the IPA liquid (step S24: circulation step). Fig. 7(a) shows an example of the state of the substrate processing apparatus 10 in step S24 and step S25 described later. In step S24, the control unit 90 opens the valves 332, 333, 334, and 315, and operates the pump 312. As a result, the IPA liquid circulates through the processing tank 2, the chamber 1, and the circulation pipe 331.

[0113] In this circulation path, the IPA liquid flows from the -Z side to the +Z side within the processing tank 2. Thus, part of the IPA liquid flows into the inside of the carrier C from the lower opening C2 of the carrier C, flows between the multiple substrates W to the +Z side, and flows out from the upper opening C1 of the carrier C. Since the IPA liquid flows between the multiple substrates W in this manner, the IPA liquid is more likely to act on the surfaces of the substrates W and to enter the internal space of the three-dimensional structure of the surfaces of the substrates W. This can further promote the replacement of pure water in the internal space of the substrates W with IPA liquid.

[0114] 4, in parallel with step S24, the IPA vapor supply unit 51 supplies IPA vapor to the space above the processing tank 2 (step S25: IPA vapor supply step). In step S25, the control unit 90 opens the valve 512 and causes the heater 65 to perform a heating operation. As a result, IPA vapor from the IPA vapor supply source 513 is supplied to the discharge pipe 61 through the vapor supply pipe 511. Since the heater 65 heats the IPA vapor, condensation of the IPA vapor can be suppressed. The control unit 90 may also open the valve 56 to supply not only the IPA vapor but also a carrier gas.

[0115] Supplying the IPA vapor into the chamber 1 can suppress evaporation of the IPA liquid circulating in the chamber 1, and suppress a decrease in the amount of the IPA liquid circulating. For example, the IPA vapor may condense on the surface of the IPA liquid in the processing tank 2 and become liquefied.

[0116] When the IPA liquid is sufficiently circulated, the IPA liquid circulation unit 33 stops the circulation of the IPA liquid. For example, when a fourth predetermined time has elapsed since the start of step S24, the control unit 90 closes the valves 332, 333, 334 and 315, and stops the pump 312.

[0117] Note that even by this step S24, the pure water adhering to the carrier C and the multiple substrates W is not necessarily completely replaced with the IPA liquid, and the pure water may remain on the carrier C and the multiple substrates W. For example, the pure water adhering to the carrier C and the multiple substrates W may flow together with the IPA liquid and adhere to the carrier C or the substrates W again.

[0118] Next, the liquid level of the IPA liquid is lowered relative to the carrier C and the substrates W to expose the carrier C and the substrates W from the IPA liquid (step S3: exposure step). As a specific example, the IPA liquid discharge unit 32 discharges the IPA liquid in the processing tank 2 and the chamber 1 to the outside of the chamber 1 (discharge step). FIG. 7(b) shows an example of the state of the substrate processing apparatus 10 in step S3. In step S3, the control unit 90 opens the valves 322, 323, and 332. As a result, the IPA liquid in the processing tank 2 is collected into the storage tank 41 through the first drain pipe 321, and the IPA liquid in the chamber 1 is collected into the storage tank 41 through the pipe 49 and the first drain pipe 321. The IPA liquid collected in the storage tank 41 is reused for the next processing of the substrates W.

[0119] It is not necessary to drain the IPA liquid from the chamber 1, and the valve 332 may be closed.

[0120] As the IPA liquid in the processing bath 2 is discharged, the liquid level of the IPA liquid drops over time, so that the +Z side portions of the carrier C and the plurality of substrates W are gradually exposed above the liquid level of the IPA liquid.

[0121] In parallel with step S3, step S25 may be continued. In this case, while the IPA liquid is being discharged, the IPA vapor acts on the carrier C and the exposed portions of the substrates W. As a result, the pure water remaining on the carrier C and the exposed portions of the substrates W is replaced with the IPA liquid.

[0122] When the IPA liquid has been sufficiently discharged, the IPA liquid discharge unit 32 stops discharging the IPA liquid. For example, when a fifth predetermined time has elapsed since the start of step S3, the control unit 90 closes the valves 322, 323, and 332.

[0123] Next, a post-IPA vapor supply step (step S4) is performed. The content of the post-IPA vapor supply step is the same as that of the IPA vapor supply step (step S25). That is, the IPA vapor supply unit 51 supplies IPA vapor to the chamber 1. FIG. 8(a) shows an example of the state of the substrate processing apparatus 10 in step S4. In step S4, the IPA liquid in the processing bath 2 has already been discharged, so that the carrier C and the substrates W are entirely exposed in the chamber 1. Therefore, the IPA vapor supplied by the IPA vapor supply unit 51 acts on the carrier C and the substrates W entirely, and the pure water remaining on the carrier C and the substrates W is replaced with the IPA liquid.

[0124] Fig. 9 is a timing chart showing an example of the circulation step (step S24), the IPA vapor supply step (step S25), the exposure step (step S3), and the post-IPA vapor supply step (step S4). In the example of Fig. 9, the IPA vapor supply step is performed in parallel with the circulation step and the exposure step, and the post-IPA vapor supply step is performed consecutively to the exposure step. In other words, the IPA vapor supply unit 51 supplies IPA vapor in the circulation step and the exposure step (step S25), and also supplies IPA vapor after the exposure step (step S4).

[0125] When the IPA liquid has been sufficiently replaced from the pure water by the IPA vapor, the IPA vapor supply unit 51 stops the supply of IPA vapor. For example, when a sixth predetermined time has elapsed from the start of step S4, the control unit 90 closes the valve 512 and causes the heater 65 to stop the heating operation. The sixth predetermined time is, for example, about several minutes. Furthermore, when the IPA vapor supply unit 51 supplies not only IPA vapor but also carrier gas, the control unit 90 also closes the valve 56.

[0126] Next, the inert gas supply unit 52 supplies high-temperature inert gas (step S5: drying process). FIG. 8(b) shows an example of the state of the substrate processing apparatus 10 in step S5. In step S5, the control unit 90 opens the valve 522 and causes the heater 65 to perform a heating operation. As a result, the inert gas from the inert gas supply source 523 is supplied to the discharge pipe 61 through the inert gas supply pipe 521. The heater 65 heats the inert gas, so that the high-temperature inert gas is discharged from the discharge pipe 61 into the chamber 1.

[0127] The high-temperature inert gas flows toward the carrier C and the multiple substrates W and acts on the carrier C and the multiple substrates W. This can promote evaporation of the IPA liquid attached to the carrier C and the multiple substrates W. Therefore, the carrier C and the multiple substrates W can be dried more quickly.

[0128] Since the heater 65 performs the heating operation in both steps S4 and S5, it is not necessary to temporarily stop the heating operation of the heater 65 at the time of transition between steps S4 and S5.

[0129] When the carrier C and the substrate W are sufficiently dried, the inert gas supply unit 52 stops supplying the inert gas. For example, when a seventh predetermined time has elapsed from the start of step S5, the control unit 90 closes the valve 522 and causes the heater 65 to stop the heating operation. The seventh predetermined time is, for example, about 10 minutes.

[0130] Next, the dried carrier C is carried out (step S6: carrying out step). Specifically, the control unit 90 opens the lid 12, and the transfer mechanism carries the carrier C out of the chamber 1. When the carrier C is carried out, the control unit 90 closes the lid 12.

[0131] <Effects of substrate processing equipment> As described above, according to the substrate processing apparatus 10, the carrier C and the substrates W are immersed in the IPA liquid in the processing tank 2 (step S2: immersion step). Therefore, a larger amount of IPA liquid acts on the carrier C and the substrates W, and the pure water adhering to the carrier C and the substrates W can be replaced with the IPA liquid. This can also promote the replacement of the pure water in the internal space of the three-dimensional structure of the substrates W with the IPA liquid.

[0132] Moreover, after the immersion step (step S2), IPA vapor is applied to the carrier C and the substrates W (e.g., step S4: post-IPA vapor supply step). Therefore, the pure water remaining on the surfaces of the carrier C and the substrates W, which was not replaced by the immersion in the IPA liquid, can be replaced with the IPA liquid by the IPA vapor.

[0133] That is, in the substrate processing apparatus 10, the pure water adhering to the carrier C and the substrates W is replaced with the IPA liquid by a two-stage process of immersion in the IPA liquid and supply of the IPA vapor. Therefore, even if the substrates W have a three-dimensional structure, the pure water adhering to the substrates W can be more appropriately replaced with the IPA liquid.

[0134] Particularly in the above example, the IPA liquid discharge unit 32 recovers the IPA liquid in the processing tank 2 and the chamber 1 into the storage tank 41, so that the IPA liquid containing pure water is recovered into the storage tank 41. In the above example, the piping system of the IPA liquid unit 3 is not provided with a moisture removal mechanism for separating the IPA liquid from the pure water, so that in the processing of the next carrier C, the IPA liquid containing pure water is supplied from the storage tank 41 to the processing tank 2. In this case, there is a high possibility that a small amount of pure water will remain on the carrier C and the substrate W even after the immersion process (step S2).

[0135] In this embodiment, as described above, the pure water adhering to the carrier C and the substrates W can be replaced with the IPA liquid not only by immersion in the IPA liquid but also by IPA vapor. Since this IPA vapor contains almost no moisture, the pure water remaining in the carrier C and the substrates W can be more appropriately replaced with the IPA liquid. In other words, even if the IPA liquid containing moisture in the processing tank 2 is supplied by reusing the IPA liquid, the two-stage process of immersion in the IPA liquid and supply of the IPA vapor can more appropriately replace the pure water in the carrier C and the multiple substrates W with the IPA liquid.

[0136] In addition, the moisture removal mechanism distills the IPA liquid from a liquid that contains the IPA liquid and the pure water to remove the pure water, so a space is required to heat the liquid with a heater and a space is required to cool the IPA vapor and return it to the IPA liquid. In other words, a complex structure is required. In contrast, in the above example, the moisture removal mechanism can be omitted, so the structure of the piping system can be simplified.

[0137] In the above example, the IPA liquid is circulated while the carrier C and the multiple substrates W are immersed in the IPA liquid in the processing tank 2 (step S24: circulation step). This allows a liquid flow to be formed in the processing tank 2 in which the IPA liquid flows between the multiple substrates W. This makes it easier for the IPA liquid to act on the multiple substrates W. In other words, the IPA liquid can easily enter the internal space of the three-dimensional structure of the substrates W, further facilitating the replacement of pure water with the IPA liquid in the internal space.

[0138] Incidentally, the IPA liquid may contain more impurities such as particles and metal ions than the IPA vapor. Furthermore, by immersing the carrier C in the IPA liquid, the impurities attached to the carrier C and the substrate W may flow into the IPA liquid in the processing tank 2. This increases the impurity concentration of the IPA liquid in the processing tank 2. If the IPA liquid contains impurities in this way, there is a possibility that the impurities will re-adhere to the substrate W from the IPA liquid in the processing tank 2.

[0139] In contrast, in the above example, the liquid supply pipe 311 and the circulation pipe 331 are provided with the filter 313. This can reduce impurities in the IPA liquid. This can prevent impurities from adhering to the carrier C and the substrates W.

[0140] In the above example, a pipe heating step (step S1) is performed. That is, the pipes can be heated before the IPA vapor is supplied (for example, step S25: IPA vapor supply step). This reduces the possibility that the IPA vapor is cooled in the pipes when the IPA vapor is supplied. This makes it possible to suppress condensation of the IPA vapor.

[0141] In the above example, the pipe heating step (step S1) is performed before the supply of the IPA liquid (step S21: IPA liquid supply step). This can suppress the evaporation of the IPA liquid supplied to the processing tank 2. In other words, if high-temperature inert gas is supplied into the chamber 1 while the IPA liquid is stored in the processing tank 2, the evaporation of the IPA liquid in the processing tank 2 is promoted. In particular, since the latent heat of evaporation of the IPA liquid is small, the IPA liquid is easily evaporated by the high-temperature inert gas. In this case, the consumption of the IPA liquid increases. In contrast, in the above example, the high-temperature inert gas is supplied before the supply of the IPA liquid, and the high-temperature inert gas is not supplied in the IPA liquid supply step (step S21). This can suppress the evaporation of the IPA liquid supplied to the processing tank 2, and suppress the consumption of the IPA liquid.

[0142] Also, in the above example, the pre-circulation step (step S22) is performed before the loading step (step S23). This allows gas (e.g., air) present in the circulation pipe 331 to be discharged before the carrier C is loaded. Therefore, even when the carrier C is loaded, the gas acting on the carrier C and the multiple substrates W can be reduced or avoided. When the gas acts on the carrier C and the multiple substrates W, impurities in the gas may adhere to the carrier C and the multiple substrates W, but the adhesion of such impurities can be suppressed or avoided.

[0143] Also, in the above example, since the filter 313 is provided in the circulation pipe 331, in the pre-circulation step (step S22), the concentration of impurities in the circulating IPA liquid can be reduced over time. As a result, a cleaner IPA liquid can be circulated, and in the loading step (step S23), the carrier C and the plurality of substrates W can be immersed in a cleaner IPA liquid.

[0144] Also, in the above example, in the circulation step (step S24), IPA vapor is supplied into the chamber 1 (step S25: IPA vapor supply step). According to this, a decrease in the circulation amount of the IPA liquid can be suppressed.

[0145] Also, in the above example, in the exposure step (step S3) as well, IPA vapor is supplied into the chamber 1 (step S25: IPA vapor supply step). In the exposure step, the carrier C and the plurality of substrates W are gradually exposed from their +Z-side portions from the IPA liquid, and IPA vapor can be promptly applied to the exposed portions. That is, IPA vapor can be applied to the carrier C and the plurality of substrates W at an earlier timing.

[0146] <Replacement of IPA Liquid> As described above, in the substrate processing apparatus 10, since the carrier C and the plurality of substrates W with pure water attached are immersed in the IPA liquid in the processing tank 2, pure water is mixed into the IPA liquid in the processing tank 2. In the above example, since the IPA liquid is recovered in the storage tank 41, the moisture concentration in the storage tank 41 increases each time processing is performed on the plurality of substrates W. In particular, in the above example, since no moisture removal mechanism is provided in the piping system of the IPA liquid unit 3, the moisture concentration in the storage tank 41 tends to be high.

[0147] Therefore, when the moisture concentration in the storage tank 41 becomes higher than the allowable value, it is advisable to replace the IPA liquid in the storage tank 41 with a new IPA liquid.

[0148] In the example of FIG. 1, a liquid exchange unit 8 is provided. The liquid exchange unit 8 includes a new liquid supply unit 81 and an old liquid discharge unit 82. The old liquid discharge unit 82 discharges old liquid (a mixture of IPA liquid and pure water) in the storage tank 41 to the outside. The discharged liquid is, for example, discarded. In the example of FIG. 1, the old liquid discharge unit 82 includes a second drain pipe 821 and a valve 822. The upstream end of the second drain pipe 821 is connected to, for example, the bottom of the storage tank 41. The valve 822 is provided in the second drain pipe 821. When the valve 822 is opened, the liquid in the storage tank 41 is discharged to the outside through the second drain pipe 821. When the valve 822 is closed, the discharge of the liquid in the storage tank 41 stops.

[0149] The new liquid supply unit 81 supplies new IPA liquid (hereinafter also referred to as new IPA liquid) to the storage tank 41. The new IPA liquid has a lower concentration of impurities than the old IPA liquid in the storage tank 41, and contains almost no pure water. In the example of FIG. 1, the new liquid supply unit 81 includes a new liquid pipe 811, a valve 812, and a valve 813. The new liquid pipe 811 is a pipe for supplying new IPA liquid to the storage tank 41, and in the example of FIG. 1, it is composed of a pipe 84 and a pipe 85 connected in series to each other. The downstream end of the pipe 84 is connected to the storage tank 41, the upstream end of the pipe 84 is connected to the downstream end of the pipe 85, and the upstream end of the pipe 85 is connected to an IPA liquid supply source 87. The IPA liquid supply source 87 supplies new IPA liquid to the upstream end of the pipe 85. In this way, the new liquid pipe 811 connects the storage tank 41 and the IPA liquid supply source 87 to each other.

[0150] 1, the valve 812 is provided in the pipe 84, and the valve 813 is provided in the pipe 85. When the valves 812 and 813 are opened, new IPA liquid is supplied from the IPA liquid supply source 87 to the storage tank 41 through the new liquid pipe 811. When the valves 812 and 813 are closed, the supply of the new IPA liquid stops.

[0151] 1, a sensor 80 is provided that detects the moisture concentration of the liquid stored in the storage tank 41. The sensor 80 is a so-called moisture meter. The sensor 80 may be, for example, an electrical resistance type moisture meter that measures the electrical resistance value of the liquid in the storage tank 41 as the moisture concentration. The sensor 80 outputs an electrical signal indicative of the measured moisture concentration to the control unit 90.

[0152] The control unit 90 determines whether or not liquid replacement is necessary based on the moisture concentration measured by the sensor 80. For example, the control unit 90 determines that liquid replacement is necessary when the moisture concentration is equal to or higher than a permissible value.

[0153] 10 is a flow chart showing an example of the liquid exchange process. This liquid exchange process is performed, for example, when the carrier C has not been carried into the substrate processing apparatus 10 (so-called standby state). First, the sensor 80 measures the water concentration of the liquid in the storage tank 41 (step S11: measurement process). Next, the control unit 90 judges whether liquid exchange is necessary or not based on the water concentration measured by the sensor 80 (step S12: judgment process). For example, the control unit 90 judges whether the water concentration is equal to or higher than the allowable value, and judges that liquid exchange is necessary when the water concentration is equal to or higher than the allowable value. On the other hand, the control unit 90 judges that liquid exchange is not necessary when the water concentration is lower than the allowable value. When liquid exchange is not necessary, step S11 is executed again.

[0154] When liquid replacement is necessary, the old liquid discharge unit 82 discharges the liquid in the storage tank 41 to the outside (step S13: discharge step). Specifically, the control unit 90 opens the valve 822. This causes the liquid in the storage tank 41 to be discharged to the outside through the second drain pipe 821. When the liquid in the storage tank 41 has been sufficiently discharged, the control unit 90 closes the valve 822. For example, when an eighth predetermined time has elapsed since the start of step S13, the control unit 90 closes the valve 822.

[0155] Next, the fresh liquid supply unit 81 supplies fresh IPA liquid to the storage tank 41 (step S14: fresh IPA liquid supply process). Specifically, the control unit 90 opens the valve 812 and the valve 813. As a result, the fresh IPA liquid from the IPA liquid supply source 87 is supplied into the storage tank 41 through the fresh liquid pipe 811. When the fresh IPA liquid is sufficiently stored in the storage tank 41, the fresh liquid supply unit 81 stops the supply of the fresh IPA liquid. For example, when the ninth predetermined time has elapsed since the start of step S14, the control unit 90 closes the valve 812 and the valve 813.

[0156] As described above, when the moisture concentration in the storage tank 41 increases, the liquid in the storage tank 41 is exchanged. As a result, an IPA liquid with a low moisture concentration can be stored in the storage tank 41, and the IPA liquid with a low moisture concentration can be supplied from the storage tank 41 to the treatment tank 2.

[0157] <Supplementary of IPA Liquid in IPA Vapor Supply Source> In the example of FIG. 1, an IPA liquid replenishment unit 83 is also provided. The IPA liquid replenishment unit 83 supplies fresh IPA liquid to the storage tank 53 of the IPA vapor supply source 513. The IPA liquid replenishment unit 83 includes a replenishment pipe 831, a valve 832, and a valve 813. The replenishment pipe 831 is a pipe for supplying fresh IPA liquid to the storage tank 53. In the example of FIG. 1, the replenishment pipe 831 is composed of pipes 86 and 85 connected in series with each other. The downstream end of the pipe 86 is connected to the storage tank 53, and the upstream end of the pipe 86 is connected to the downstream end of the pipe 85. Since the pipe 85 functions as a part of the fresh liquid pipe 811, the pipe 85 is shared by the fresh liquid pipe 811 and the replenishment pipe 831.

[0158] The valve 832 is provided in the pipe 86. When the valve 832 and the valve 813 are opened, fresh IPA liquid is supplied from the IPA liquid supply source 87 to the storage tank 53 through the replenishment pipe 831. As a result, when the amount of IPA liquid in the storage tank 53 decreases, the IPA liquid in the storage tank 53 can be replenished. When the valve 832 and the valve 813 are closed, the supply of fresh IPA liquid to the storage tank 53 stops.

[0159] <Second Embodiment> Fig. 11 is a diagram illustrating an example of the configuration of a substrate processing apparatus 10A according to the second embodiment. The substrate processing apparatus 10A has the same configuration as the substrate processing apparatus 10, except for the presence or absence of a dispersion plate 23. In the example of Fig. 11, various configurations outside the chamber 1 are appropriately omitted for ease of illustration. The same configurations are also appropriately omitted in other drawings referred to below.

[0160] The distribution plate 23 is provided inside the treatment tank 2 at a position facing the downstream port of the circulation pipe 331. Specifically, the distribution plate 23 is provided between the mounting table 21 and the downstream port of the circulation pipe 331, and the carrier C, the mounting table 21, the distribution plate 23, and the downstream port of the circulation pipe 331 are arranged side by side in the Z-axis direction.

[0161] FIG. 12 is a perspective view showing an example of the configuration of the treatment tank 2, the dispersion plate 23, and the circulation pipe 331. In the example of FIG. 12, the dispersion plate 23 has a disk shape and is provided with its thickness direction along the Z-axis direction. In the examples of FIG. 11 and FIG. 12, the dispersion plate 23 is fixed to the bottom of the treatment tank 2 via a plurality of connecting members 24. The multiple connecting members 24 are, for example, equally spaced from each other and protrude from the periphery of the dispersion plate 23, and extend to the -Z side. The -Z side end of the connecting member 24 is connected to the bottom of the treatment tank 2. A space is formed between the multiple connecting members 24.

[0162] 13 is a plan view for diagrammatically showing the size relationship between the lower opening C2 of the carrier C, the distribution plate 23, and the downstream opening of the circulation pipe 331. The distribution plate 23 has a size sufficient to cover the downstream opening of the circulation pipe 331 in plan view. That is, in plan view, the circular outline of the downstream opening of the circulation pipe 331 is included within the circular outline of the distribution plate 23, and the downstream opening of the circulation pipe 331 does not extend beyond the distribution plate 23 in plan view. In other words, the diameter of the downstream opening of the circulation pipe 331 is smaller than the diameter of the distribution plate 23.

[0163] On the other hand, the dispersion plate 23 is smaller in plan view than the lower opening C2 of the carrier C. That is, in plan view, the circular outline of the dispersion plate 23 is included inside the rectangular outline of the lower opening C2 of the carrier C, and the dispersion plate 23 does not extend outward beyond the lower opening C2 in plan view.

[0164] An example of the operation of the substrate processing apparatus 10A according to the second embodiment is similar to that of the first embodiment. However, in the second embodiment, the circulation step (step S24) is essential. In the circulation step, the IPA liquid flowing into the processing tank 2 from the downstream port of the circulation pipe 331 collides with the main surface (=lower surface) on the -Z side of the distribution plate 23, flows along the lower surface of the distribution plate 23, and passes between the multiple connecting members 24 (see also the dashed arrows in FIG. 1). Then, the IPA liquid flows from the periphery of the distribution plate 23 toward the lower opening C2 of the carrier C, and flows between the multiple substrates W toward the +Z side.

[0165] According to this, the flow of the IPA liquid can be expanded in a plan view by the dispersion plate 23. Therefore, the IPA liquid flows from the -Z side to the +Z side throughout the entire internal space of the carrier C. In other words, the flow velocity distribution of the IPA liquid in the carrier C in a plan view can be made more uniform. Therefore, the process of replacing the pure water with IPA can be performed more uniformly for each substrate W.

[0166] <Third embodiment> 14 is a diagram illustrating an example of a configuration of a substrate processing apparatus 10B according to the third embodiment. The substrate processing apparatus 10B has a similar configuration to the substrate processing apparatus 10, except for the presence or absence of a swing mechanism 20B.

[0167] The rocking mechanism 20B reciprocates (rocks) the carrier C carried into the chamber 1 within a predetermined movement range. For example, the rocking mechanism 20B rocks the mounting table 21, thereby rocking the carrier C mounted on the mounting table 21. This can improve the processing efficiency for a plurality of substrates W, as described in detail below.

[0168] 14, the rocking mechanism 20B includes a mounting unit 20 and a drive unit 25. In addition, in the example of Fig. 14, the connecting member 22 that connects the mounting table 21 of the mounting unit 20 to the chamber 1 includes a pair of pillar members 221 and a pair of shafts 222.

[0169] A pair of pillar members 221 are erected on both sides of the mounting table 21 in the X-axis direction. That is, one pillar member 221 is connected to the end of the mounting table 21 on the -X side, and the other pillar member 221 is connected to the end of the mounting table 21 on the +X side. The pair of pillar members 221 extend from the mounting table 21 to the +Z side, and the end of the +Z side is located on the +Z side of the end of the processing tank 2 on the +Z side. The end of each pillar member 221 on the +Z side is connected to a shaft 222. The pair of shafts 222 are provided coaxially with respect to the rotation axis Q1. The shaft 222 on the -X side extends from the pillar member 221 on the -X side to the -X side, and is supported rotatably around the rotation axis Q1 with respect to the side wall of the chamber 1 on the -X side. The shaft 222 on the +X side extends from the pillar member 221 on the +X side to the +X side, and is supported rotatably around the rotation axis Q1 with respect to the side wall of the chamber 1 on the +X side. The rotation axis Q1 is parallel to the horizontal direction, for example, and as a specific example, parallel to the X-axis direction.

[0170] The driving unit 25 rotates the shaft 222 around the rotation axis Q1. The driving unit 25 may have, for example, a motor. Alternatively, the driving unit 25 may include, for example, an air cylinder and a link mechanism that converts the linear driving force of the air cylinder into a rotational force and transmits the rotational force to the shaft 222.

[0171] The driving unit 25 rotates the shaft 222 around the rotation axis Q1 within a predetermined angular range, so that the mounting table 21 moves back and forth within a predetermined movement range along the circumferential direction centered on the rotation axis Q1. As a result, the carrier C mounted on the mounting table 21 also moves back and forth (i.e., swings).

[0172] An example of the operation of the substrate processing apparatus 10B according to the third embodiment is similar to that of the first embodiment, except that the rocking mechanism 20B rocks the carrier C in the drying step (step S5).

[0173] Fig. 15 is a diagram showing an example of a state in which the carrier C is swinging. Fig. 15(a) shows an example of a state in the substrate processing apparatus 10B when the carrier C is moving to the -Y side, and Fig. 15(b) shows an example of a state in the substrate processing apparatus 10B when the carrier C is moving to the +Y side. However, in Fig. 15, for ease of illustration, only the configuration inside the chamber 1 is shown typically.

[0174] When the rocking mechanism 20B rocks the carrier C in the drying process, the carrier C rocks while high-temperature inert gas is being supplied from the discharge port 61a of the discharge pipe 61. This rocking causes the carrier C and the multiple substrates W to move relative to the discharge pipe 61. Therefore, the high-temperature inert gas discharged from the discharge pipe 61 acts on the carrier C and the multiple substrates W more uniformly.

[0175] For comparison, a case where the carrier C does not oscillate will be described. First, the flow velocity distribution of the inert gas discharged from the discharge pipe 61 will be described. Since the discharge pipe 61 has a plurality of discharge ports 61a arranged along the Y-axis direction, the flow velocity distribution of the inert gas varies in the Y-axis direction. Specifically, the flow velocity is high directly below each discharge port 61a and low between the discharge ports 61a. Therefore, when the carrier C does not oscillate, the substrates W include a substrate W on which the inert gas acts at a high flow velocity and a substrate W on which the inert gas acts at a low flow velocity. This causes the substrates W to dry more non-uniformly, and the time required to dry all the substrates W becomes slightly longer.

[0176] In contrast, when the rocking mechanism 20B rocks the carrier C, the time average value of the flow velocity of the inert gas supplied to each substrate W can be made more uniform. In particular, when the rocking direction includes a Y-axis direction component, the time average value can be made more uniform. This allows the substrates W to be dried more uniformly, and multiple substrates W can be dried in a shorter time.

[0177] In particular, when the rocking mechanism 20B moves the carrier C in the circumferential direction centered on the shaft 222, the main surface of the substrate W is tilted according to the position of the carrier C. For example, in FIG. 15(a), the main surface of the substrate W on the -Y side is tilted to face the +Z side, and in FIG. 15(b), the main surface of the substrate W on the +Y side is tilted to face the +Z side. In the example of FIG. 15(a), the inert gas hits the main surface of the substrate W on the -Y side with a larger wind pressure, and in the example of FIG. 15(b), the inert gas hits the main surface of the substrate W on the +Y side with a larger wind pressure. Thus, the inert gas can be hit against both main surfaces of the substrate W with a larger wind pressure. This makes it easier for the high-temperature inert gas to heat both main surfaces of the substrate W, and the substrate W can be dried in a shorter time.

[0178] It is not necessary for the rocking mechanism 20B to rock the carrier C in the drying step (step S5). For example, the rocking mechanism 20B may rock the carrier C while the carrier C is immersed in the IPA liquid in the processing bath 2 (for example, step S24: circulation step). This causes the carrier C and the multiple substrates W to move relative to the rinsing liquid, which can further promote the replacement of the pure water attached to the surfaces of the carrier C and the substrates W with the rinsing liquid. In particular, when the rocking direction includes a Y-axis direction component, the substrate W moves relative to the rinsing liquid along its thickness direction. This presses the substrate W against the rinsing liquid over a larger area, which makes it easier for the rinsing liquid to act perpendicularly to the surface of the substrate W. This can further promote the replacement of the pure water with the rinsing liquid.

[0179] Furthermore, the rocking mechanism 20B may rock the carrier C in the IPA vapor supplying step (step S25) and the post-IPA vapor supplying step (step S4). This allows the IPA vapor discharged from the discharge pipe 61 to act more uniformly on the carrier C and the multiple substrates W. This allows the replacement of the pure water with the rinsing liquid in the carrier C and the multiple substrates W to be performed more uniformly.

[0180] <Fourth embodiment> 16 is a diagram illustrating an example of a configuration of a substrate processing apparatus 10C according to the fourth embodiment. The substrate processing apparatus 10C has a similar configuration to that of the substrate processing apparatus 10, except for the internal configuration of the placement unit 20.

[0181] In the substrate processing apparatus 10C, the mounting part 20 further includes a push-up mechanism 26. Fig. 17 is a view for explaining the positional relationship between the push-up mechanism 26, the carrier C, and the substrate W. Fig. 17 shows an XZ cross section at a position passing through one substrate W.

[0182] The push-up mechanism 26 is provided on the mounting table 21, and when the carrier C is placed on the mounting table 21, it lifts and supports the multiple substrates W from the carrier C. In the example of FIG. 16 and FIG. 17, the push-up mechanism 26 includes a protrusion support part 261. The protrusion support part 261 is erected on the mounting table 21 and protrudes from the mounting table 21 to the +Z side. The protrusion support part 261 may be formed of, for example, quartz or resin. When the carrier C is placed on the mounting table 21, the protrusion support part 261 is located in the lower opening C2 of the carrier C. The tip (end part on the +Z side) of the protrusion support part 261 abuts on the -Z side part of the side surface of the multiple substrates W, and supports the multiple substrates W in a state where they are floating with respect to the carrier C. In other words, when the multiple substrates W are supported by the protrusion support part 261, the side surface of the substrate W is separated from the carrier C, and the carrier C no longer supports the multiple substrates W in the Z axis direction. However, the carrier C supports the substrate W in its thickness direction so that the substrate W can be maintained in an upright position.

[0183] In the example of FIG. 16 and FIG. 17, two protrusion supports 261a and 261b are provided as the protrusion support 261. The protrusion support 261a and the protrusion support 261b are provided at positions sandwiching the center of the substrate W in the X-axis direction. The protrusion support 261a is provided on the -X side of the center, and the protrusion support 261b is provided on the +X side of the center. Therefore, the tip of the protrusion support 261a abuts against the side surfaces of the substrates W at a position shifted toward the -X side from the center of the substrate W, and the tip of the protrusion support 261b abuts against the side surfaces of the substrates W at a position shifted toward the +X side from the center of the substrate W. This allows the protrusion support 261a and the protrusion support 261b to support the substrate W in the X-axis direction and the Z-axis direction.

[0184] An example of the operation of the substrate processing apparatus 10C according to the fourth embodiment is similar to that of the first embodiment. In the substrate processing apparatus 10C, the push-up mechanism 26 supports the substrates W in a state in which the substrates W are lifted from the carrier C. Therefore, for example, when the carrier C is immersed in the IPA liquid in the processing bath 2, the IPA liquid easily flows into the gap between the side surface of each substrate W and the inner surface of the carrier C.

[0185] For comparison, a case where the push-up mechanism 26 is not provided will be considered. In the example of Fig. 17, the substrate W when the push-up mechanism 26 is not provided is shown by virtual lines. In this case, each substrate W is supported by the carrier C by a part of the side surface of each substrate W contacting a part of the inner surface of the carrier C. When the side surface of the substrate W contacts the inner surface of the carrier C in this manner, the IPA liquid does not easily act on the substrate W and the carrier C at the contact point P, and it is difficult to replace the pure water with the IPA liquid at the contact point P.

[0186] In contrast, when the push-up mechanism 26 is provided, the side surface of each substrate W can be separated from the inner surface of the carrier C. Therefore, the IPA liquid can easily flow through the gap between the side surface of each substrate W and the inner surface of the carrier C, and replacement of the pure water with the IPA liquid can be promoted even in the gap. In particular, when the circulation step (step S24) is performed, part of the IPA liquid can easily pass through the gap between the side surface of each substrate W and the inner surface of the carrier C from the -Z side to the +Z side, so that replacement of the pure water with the IPA liquid can be further promoted even in the gap.

[0187] Moreover, in the fourth embodiment, the exposing step (step S3: discharging step) is performed in a state in which the plurality of substrates W are supported by the push-up mechanism 26. According to this, while the IPA liquid in the processing bath 2 is being discharged, a portion of the IPA liquid can easily flow from the +Z side to the -Z side through the gap between each substrate W and the inner surface of the carrier C.

[0188] For comparison, consider a case where the push-up mechanism 26 is not provided. In this case, in step S3, the IPA liquid in the processing bath 2 is discharged in a state where part of the side surface of each substrate W contacts part of the inner surface of the carrier C. When the side surface of each substrate W contacts the inner surface of the carrier C in this manner, the IPA liquid is likely to remain at the contact point P.

[0189] In contrast, when a push-up mechanism 26 is provided, as described above, the IPA liquid can easily flow through the gap between each substrate W and the inner surface of the carrier C, thereby reducing the amount of IPA liquid remaining after the IPA liquid is drained.

[0190] Moreover, in the fourth embodiment, the post-IPA vapor supply step (step S4) is performed in a state in which the push-up mechanism 26 supports a plurality of substrates W. Therefore, in the post-IPA vapor supply step, a portion of the IPA vapor can easily flow through the gaps between each substrate W and the inner surface of the carrier C. This can further promote the replacement of the deionized water with the IPA liquid in those gaps as well.

[0191] Moreover, in the fourth embodiment, the drying step (step S5) is performed in a state where the push-up mechanism 26 supports multiple substrates W. Therefore, in the drying step, a part of the high-temperature inert gas can easily flow through the gap between each substrate W and the inner surface of the carrier C. Therefore, drying can be promoted even in the gap. In other words, the multiple substrates W and the carrier C can be dried in a shorter time.

[0192] <Shape of protrusion support part> 16 and 17, the protrusion support portion 261 has a tapered shape that tapers toward the +Z side. This makes it possible to reduce the contact area between the protrusion support portion 261 and the side surface of the substrate W, and therefore the amount of residual processing liquid at this contact point can also be reduced. From this perspective, it is desirable for the protrusion support portion 261 to contact the substrate W by point contact in the ZX plane. It is also desirable for the protrusion support portion 261 to extend uniformly along the Y-axis direction. This makes it possible to reduce the contact area between each protrusion support portion 261 and the side surface of all the substrates W.

[0193] Hereinafter, the -X side surface and the +X side surface forming the tip of the protrusion support portion 261a are referred to as tip surfaces 262 and 263, respectively, and the -X side surface and the +X side surface forming the tip of the protrusion support portion 261b are referred to as tip surfaces 264 and 265, respectively. The tip surfaces 262 and 263 are, for example, flat surfaces, and are connected to each other at their +Z side ends to form the tapered shape of the protrusion support portion 261a. The tip surfaces 263 and 264 are, for example, flat surfaces, and are connected to each other at their +Z side ends to form the tapered shape of the protrusion support portion 261b.

[0194] 17, in the protrusion support portion 261a on the -X side, the tip surface 262 on the -X side is aligned with the Z-axis direction more than the tip surface 263 on the +X side. In other words, in the protrusion support portion 261a, the inclination of the tip surface 263 is gentler than the inclination of the tip surface 262. As a more specific example, the tip of the protrusion support portion 261a has a shape similar to that of a cutter blade in the ZX plane. In other words, the tip surface 262 is parallel to the Z-axis direction, and the tip surface 263 is inclined with respect to the Z-axis direction.

[0195] In the +X side protrusion support portion 261b, the +X side tip surface 265 is aligned with the Z axis direction more than the -X side tip surface 264. In other words, in the protrusion support portion 261b, the inclination of the tip surface 264 is gentler than the inclination of the tip surface 265. As a more specific example, the tip of the protrusion support portion 261b has a shape similar to that of a cutter blade in the ZX plane. In other words, the tip surface 265 is parallel to the Z axis direction, and the tip surface 264 is inclined with respect to the Z axis direction.

[0196] Such a shape of the protrusion support portion 261 is particularly suitable for the step of discharging the IPA liquid (step S3: exposure step), which will be described in detail below.

[0197] In the discharging step, a part of the IPA liquid in the processing tank 2 flows through the gap between each substrate W and the carrier C from the -Z side to the +Z side. Since the inner surface of the carrier C is inclined in the -Z side area, the IPA liquid flows obliquely along the inner surface of the carrier C toward the lower opening C2. For example, the IPA liquid flowing through the gap between the -X side side of each substrate W and the -X side inner surface of the carrier C flows obliquely toward the lower opening C2 from the +X side to the -Z side. This IPA liquid hits the tip surface 262 on the -X side of the protrusion support portion 261a. Since the tip surface 262 is aligned along the Z axis direction, the IPA liquid that hits the tip surface 262 flows along the tip surface 262 to the -Z side.

[0198] FIG. 18 is a diagram illustrating an example of the push-up mechanism 26 according to the comparative example. In the example of FIG. 18, the tip surface 263 on the +X side of the protrusion support portion 261a is parallel to the Z-axis direction, and the tip surface 262 on the -X side is inclined. That is, the protrusion support portion 261a in FIG. 18 has a shape symmetrical to the protrusion support portion 261a in FIG. 17. In this structure, the IPA liquid flowing out from between the -X side surface of each substrate W and the -X side inner surface of the carrier C flows into between the tip surface 262 and the substrate W. Since the space between the tip surface 262 and the substrate W is recessed, the IPA liquid flowing into between the tip surface 262 and the substrate W tends to remain in the depth of the space (i.e., the contact point between the tip of the protrusion support portion 261a and the substrate W).

[0199] 17, since the tip surface 262 is parallel to the Z-axis direction, the IPA liquid that hits the tip surface 262 flows directly to the -Z side. This makes it easier to drain the IPA liquid, and makes it possible to prevent the IPA liquid from remaining at the contact point between the protrusion support portion 261a and the substrate W. The same applies to the protrusion support portion 261b.

[0200] <Number of protrusion support parts> In the above example, two protrusion support portions 261a and 261b are provided, but three or more protrusion support portions 261 may be provided side by side in the X-axis direction.

[0201] As described above, the substrate processing apparatus 10, 10A-10C and the substrate processing method have been described in detail, but the above description is merely an example in all respects, and the substrate processing apparatus 10, 10A-10C and the substrate processing method are not limited thereto. It is understood that countless modified examples not illustrated can be imagined without departing from the scope of this disclosure. The configurations described in the above embodiments and modified examples can be appropriately combined or omitted as long as they are not mutually contradictory.

[0202] For example, in the above example, the IPA vapor supply unit 51 and the inert gas supply unit 52 discharge IPA vapor and the inert gas, respectively, from a common discharge pipe 61. However, a pair of discharge pipes 61 for IPA vapor and a pair of discharge pipes 61 for the inert gas may be provided.

[0203] 1, the direction in which the gas is discharged from the discharge ports 61a of the pair of discharge pipes 61 is inclined from the horizontal direction toward the -Z side, but this is not necessarily limited to this. The discharge direction may be parallel to the horizontal direction or inclined toward the +Z side.

[0204] In the above example, in the exposing step (step S3), the IPA liquid discharge unit 32 discharges the IPA liquid in the processing bath 2, thereby exposing the carrier C and the multiple substrates W from the IPA liquid. However, this is not necessarily limited to this. For example, a lifting unit that lifts and lowers the carrier C may be provided, and the carrier C and the multiple substrates W may be exposed from the IPA liquid by raising the carrier C to a space above the processing bath 2.

[0205] In the above example, the sensor 80 measured the moisture concentration in the storage tank 41, and performed a liquid exchange process on the storage tank 41 based on the measured moisture concentration. However, the liquid exchange may be performed, for example, when the time elapsed since the previous liquid exchange is equal to or greater than a predetermined time, or when the number of processed carriers C since the previous liquid exchange is equal to or greater than a predetermined number.

[0206] In the above example, a heater is not provided in the piping system of the IPA liquid unit 3, but a heater may be provided. The heater heats the IPA liquid, so that high-temperature IPA liquid can be circulated. This can shorten the time required for the subsequent drying process. [Explanation of symbols]

[0207] 10, 10A to 10C Substrate processing equipment 2 Treatment tank 20B Swing mechanism 23 Dispersion plate 26 Push-up mechanism 311 Liquid supply pipe 313 Filters 321 First drain 331 Circulation piping 41 Reservoir 61 Discharge pipe 80 Sensors 811 New liquid pipe 821 Second drain C Career C2 bottom opening S1 Pipe heating process (step) S2 Immersion process (step) S21 IPA liquid supply process S22 Pre-circulation process (step) S23 Carry-in process (step) S24 Circulation process (step) S25 IPA steam supply process (step) S3 Exposure process (step) S4 Post-IPA steam supply process (step) W substrate

Claims

1. A substrate processing apparatus that performs processing on a plurality of substrates at once, a processing tank that stores an IPA liquid, which is an isopropyl alcohol liquid, and in which the carrier housing the plurality of substrates is immersed in the IPA liquid; a liquid supply pipe for supplying the IPA liquid to the processing tank; a first drain pipe for draining the IPA liquid from the processing tank; a discharge pipe provided above the treatment tank and configured to discharge IPA vapor, which is isopropyl alcohol vapor; a circulation pipe connected to the processing tank and configured to circulate the IPA liquid; a dispersion plate provided between a downstream port of the circulation pipe connected to a bottom of the treatment tank and the carrier carried into the treatment tank; Equipped with The dispersion plate is smaller than a lower opening provided in a lower portion of the carrier.

2. The substrate processing apparatus according to claim 1 , a storage tank configured to store the IPA liquid collected from the processing tank through the first drain pipe, In the substrate processing apparatus, an upstream end of the liquid supply pipe is connected to the storage tank.

3. The substrate processing apparatus according to claim 2, A sensor for measuring a water concentration in the storage tank; a second drain pipe for draining the IPA liquid from the storage tank; a new liquid pipe for supplying new IPA liquid to the storage tank; The substrate processing apparatus further comprises:

4. 4. The substrate processing apparatus according to claim 1, The substrate processing apparatus further comprises a swinging mechanism for swinging the carrier in the processing tank.

5. 5. The substrate processing apparatus according to claim 1, The substrate processing apparatus further comprises a push-up mechanism provided inside the processing tank for supporting the plurality of substrates in a state in which the substrates are lifted from the carrier.

6. A substrate processing method for processing a plurality of substrates collectively in a substrate processing apparatus having a housing in which a processing tank is disposed and a chamber having a lid capable of closing / opening an opening of the housing, comprising: an IPA liquid supplying step of supplying an IPA liquid, which is an isopropyl alcohol liquid, to the processing tank in a state in which the opening is closed with the lid; an immersion step of carrying a carrier housing the plurality of substrates into the processing tank after the IPA liquid supply step is completed with the opening open by the lid, and immersing the carrier in the IPA liquid in the processing tank; an exposure step of exposing the carrier and the plurality of substrates from the IPA liquid by discharging the IPA liquid from the processing tank while closing the opening with the lid after the immersion step; a post-IPA vapor supply process for supplying IPA vapor, which is isopropyl alcohol vapor, from a discharge pipe to the carrier and the plurality of substrates exposed from the IPA liquid while the opening is closed with the lid; an inert gas supplying step of supplying an inert gas into the chamber while the opening is closed with the lid after the post-IPA vapor supplying step; a carrying-out step of carrying the carrier out of the chamber while the opening is kept open by the lid after the inert gas supplying step; A substrate processing method comprising:

7. 7. The substrate processing method according to claim 6, further comprising the steps of: The substrate processing method further comprises, before the post-IPA vapor supplying step, a pipe heating step of discharging the inert gas heated by a heater from the discharge pipe.

8. 8. The substrate processing method according to claim 6, further comprising the steps of: The immersion step includes a circulation step of circulating the IPA liquid through a circulation pipe connected to the processing tank while the carrier is immersed in the IPA liquid in the processing tank.

9. 9. The substrate processing method according to claim 8, further comprising the steps of: The substrate processing method further comprises a pre-circulation step of circulating the IPA liquid through the circulation pipe before the carrier is carried into the processing bath.

10. 10. The substrate processing method according to claim 8, further comprising the steps of: The immersion step includes: The substrate processing method further includes an IPA vapor supplying step, which is performed in parallel with the circulating step, of discharging the IPA vapor from the discharge pipe.

11. A substrate processing method according to any one of claims 6 to 10, comprising: a measuring step of measuring a water concentration in a storage tank that stores the IPA liquid recovered from the processing tank; a discharge step of discharging the IPA liquid in the storage tank when the moisture concentration is equal to or higher than a permissible value; a new IPA liquid supply step of supplying new IPA liquid to the storage tank after the discharge step; The substrate processing method further comprises:

12. A substrate processing apparatus for processing a plurality of substrates collectively, comprising: a processing tank that stores an IPA liquid, which is an isopropyl alcohol liquid, and in which the carrier housing the plurality of substrates is immersed in the IPA liquid; a chamber having a housing in which the treatment tank is disposed and a lid capable of closing / opening an opening of the housing; a liquid supply pipe for supplying the IPA liquid to the processing tank; a first drain pipe for draining the IPA liquid from the processing tank; a discharge pipe provided above the treatment tank and configured to discharge IPA vapor, which is isopropyl alcohol vapor; Control unit and Equipped with The substrate processing apparatus, wherein the control unit performs control so as to execute the substrate processing method according to any one of claims 6 to 11.

13. A substrate processing method for collectively processing a plurality of substrates, comprising: an immersion step of immersing the carrier housing the plurality of substrates in an IPA liquid, which is an isopropyl alcohol liquid, in a processing tank; an exposure step of lowering a liquid level of the IPA liquid relative to the carrier and the plurality of substrates after the immersion step, thereby exposing the carrier and the plurality of substrates from the IPA liquid; a post-IPA vapor supply process of supplying IPA vapor, which is isopropyl alcohol vapor, from a discharge pipe to the carrier and the plurality of substrates exposed from the IPA liquid; a pipe heating step of discharging the inert gas heated by a heater from the discharge pipe before the post-IPA vapor supply step; A substrate processing method comprising:

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