Power Conversion Equipment

Abstract

In the present invention, an electric power converter comprises a housing, and first and second three-phase block semiconductor units of identical structure within the housing, wherein: each of the first and second three-phase block semiconductor units has a cooler, a semiconductor, a gate driver substrate, a first AC terminal, a second AC terminal, and a third AC terminal; the first AC terminals, the second AC terminals, and the third AC terminals are positioned facing each other within the housing so that the coolers are arranged on the outer side within the housing and so that the semiconductors, the gate driver substrates, the first AC terminals, the second AC terminals, and the third AC terminals are arranged on the inner side within the housing; the first three-phase block semiconductor unit is configured so that, due to a signal distribution substrate provided to the electric power converter, a U-phase signal is transmitted to the first AC terminal, a V-phase signal is transmitted to the second AC terminal, and a W-phase signal is transmitted to the third AC terminal; and the second three-phase block semiconductor unit is configured so that, due to the signal distribution substrate provided to the electric power converter, wiring is switched so that a U phase and a W phase are reversed, a W-phase signal being transmitted to the first AC terminal, a V-phase signal being transmitted to the second AC terminal, and a U-phase signal being transmitted to the third AC terminal.

Description

[Technical field]

[0001] The present invention relates to a power conversion device. [Background technology]

[0002] 2. Description of the Related Art Conventionally, in a power conversion device (PCS: Power Conditioning System), one three-phase integrated semiconductor unit is arranged for one board (housing) (see, for example, Patent Document 1).

[0003] However, in recent years, for example, in power conversion devices for photovoltaic power generation or storage batteries, the number of semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors) has been increasing with the expansion of inverter capacity. For this reason, in recent years, multiple three-phase integrated semiconductor units are sometimes arranged on a single panel in power conversion devices.

[0004] Incidentally, when a plurality of three-phase packaged semiconductor units are arranged on a board, it is preferable that the three-phase packaged semiconductor units have the same structure from the viewpoint of manufacturability, etc. For example, in a conventional model in which a plurality of three-phase packaged semiconductor units are arranged on a board, a plurality of three-phase packaged semiconductor units having the same structure are stacked in multiple layers on the board like a server rack (for example, see Patent Document 2). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2017-204901 [Patent Document 2] International Publication No. 2019 / 207723 Summary of the Invention [Problem to be solved by the invention]

[0006] However, with the increase in capacity of power conversion devices (inverters) in recent years, the number of semiconductor elements used tends to increase further, and with the increase in inverter capacity, the amount of heat generated per semiconductor element also tends to increase. This increases the load on the cooler, and the size of the cooler also tends to increase. Therefore, the size of the three-phase integrated semiconductor unit also tends to be larger than before, and when considering cooling efficiency and replaceability, it is becoming difficult to stack multiple three-phase integrated semiconductor units on a board as in the past.

[0007] In addition, a three-phase integrated semiconductor unit is mainly composed of a cooler, semiconductors, and a control board, and the semiconductors and control board need to be isolated as much as possible from outside air, which poses the risk of contamination. However, in a layout in which multiple three-phase integrated semiconductor units are stacked on a panel, if you try to isolate the semiconductors and control board from the outside air as much as possible, the cooling flow path becomes complex and pressure loss increases. Alternatively, if you try to cool multiple three-phase integrated semiconductor units evenly, you will need to use a large number of fans.

[0008] Therefore, the present disclosure aims to reduce the amount of conductor used, simplify conductor connections, and optimize the operation when multiple three-phase integrated semiconductor units are arranged in the housing of a power conversion device, while improving environmental resistance, ensuring cooling performance, simplifying cooling flow paths, and improving replaceability compared to conventional methods. [Means for solving the problem]

[0009] A power conversion device according to one embodiment includes a housing, and a first three-phase lumped semiconductor unit and a second three-phase lumped semiconductor unit, each of which has the same structure, arranged within the housing. The first three-phase lumped semiconductor unit and the second three-phase lumped semiconductor unit each have a cooler, a semiconductor, a gate driver board, a first AC terminal, a second AC terminal, and a third AC terminal. The first AC terminal and the second AC terminal are arranged within the housing such that the cooler is arranged on the outside of the housing, and the semiconductor, the gate driver board, the first AC terminal, the second AC terminal, and the third AC terminal are arranged inside the housing. The first three-phase semiconductor unit has a first AC terminal and a third AC terminal arranged opposite each other, and the first three-phase semiconductor unit is configured such that a U-phase signal is transmitted to the first AC terminal, a V-phase signal is transmitted to the second AC terminal, and a W-phase signal is transmitted to the third AC terminal by a signal distribution board included in the power conversion device, and the second three-phase semiconductor unit is configured such that the wiring is swapped so that the U and W phases are inverted by the signal distribution board included in the power conversion device, and a W-phase signal is transmitted to the first AC terminal, a V-phase signal is transmitted to the second AC terminal, and a U-phase signal is transmitted to the third AC terminal. Effect of the Invention

[0010] According to the present disclosure, when multiple three-phase integrated semiconductor units are arranged in the housing of a power conversion device, it is possible to reduce the amount of conductor used, simplify and optimize conductor connections, while improving environmental resistance, ensuring cooling performance, simplifying the cooling flow path, and improving replaceability compared to conventional methods. [Brief description of the drawings]

[0011] [Figure 1] 1 is a diagram illustrating an example of a configuration of a power conversion device according to a first embodiment. [Diagram 2] 2 is a diagram illustrating an example of the configuration of an IGBT unit illustrated in FIG. 1. [Diagram 3] 2 is a diagram showing an example of an arrangement structure of components inside a housing of the power conversion device shown in FIG. 1. [Figure 4]4 is a side view showing an example of division into a semiconductor cooling area and an electronic component area in the layout structure inside the housing of the power converter shown in FIG. 3. FIG. [Diagram 5] 4 is a rear view showing an example of division into a semiconductor cooling area and an electronic component area in the layout structure inside the housing of the power conversion device shown in FIG. 3. FIG. [Figure 6] FIG. 6 is a diagram illustrating an example of a control configuration of the power conversion device illustrated in FIGS. 1 to 5. [Figure 7] FIG. 6 is a diagram illustrating an example of a control configuration of the power conversion device illustrated in FIGS. 1 to 5. [Figure 8] 1 is a diagram showing an example of an arrangement structure of IGBT units in a power conversion device and a control configuration of a conventional signal distribution board. [Figure 9] 2 is a diagram showing an example of an arrangement structure of IGBT units and a control configuration of a signal distribution board in the power conversion device according to the first embodiment. FIG. [Figure 10] 13 is a diagram showing an example of an arrangement structure of each component in a power conversion device according to a second embodiment and division of a semiconductor cooling area and an electronic component area. FIG. [Figure 11] FIG. 11 is a diagram showing an example of an arrangement structure of IGBT units in a power conversion device according to a third embodiment. [Figure 12] 4 is a diagram showing an example of an arrangement structure of IGBT units in a power conversion device according to a first comparative example. FIG. [Figure 13] FIG. 11 is a diagram showing an example of an arrangement structure of IGBT units in a power conversion device according to a second comparative example. [Figure 14] FIG. 11 is a diagram showing an example of an arrangement structure of IGBT units in a power conversion device according to a third comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an arrangement structure of a three-phase integrated semiconductor unit, a three-phase integrated semiconductor unit, and a power conversion device according to embodiments of the present disclosure will be described with reference to the drawings.

[0013] First Embodiment Fig. 1 is a diagram showing an example of the configuration of a power conversion device 10 according to the first embodiment. In this embodiment, a solar power generation system 1 in which a DC power source is a solar panel 2 will be described as an example of a power conversion system in which the power conversion device 10 is used. However, the present invention is not limited to this, and the power conversion system in which the power conversion device 10 of this embodiment is used may be one in which the DC power source is, for example, a storage battery, or a combination of a solar cell and a storage battery.

[0014] 1, the solar power generation system 1 has a solar panel 2, a transformer 3, an AC power system 4, a power conversion device 10, a DC bus 5, and an AC circuit 6. The power conversion device 10 is connected to the solar panel 2 via the DC bus 5 at a DC end (input end) on the left side in FIG. 1, and is connected to the AC power system 4 via the AC circuit 6 and the transformer 3 at an AC end (output end) on the right side in FIG. 1. In the solar power generation system 1, DC power generated by the solar panel 2 is converted into AC power via the power conversion device 10, and the converted AC power is supplied to the AC power system 4 via the transformer 3.

[0015] The solar panel (solar cell panel) 2 is connected to a DC end of the power conversion device 10 via a DC bus 5. The solar panel 2 generates power from sunlight, and the generated DC power is supplied to the power conversion device 10 via the DC bus 5. Hereinafter, in this specification, the solar panel 2 is also referred to as a "PV (Photovoltaics) panel 2." Note that the PV panel 2 is an example of a "DC power source," and the "DC power source" may be, for example, a "storage battery (ESS: Energy Storage System)."

[0016] One end of the transformer 3 is connected to an AC end (output end) of the power conversion device 10 via an AC circuit 6, and the other end is connected to an AC power system 4. The transformer 3 transforms the AC power output from the power conversion device 10 to a predetermined voltage level and outputs it to the AC power system 4.

[0017] The AC power system (system) 4 is connected to the transformer 3 and is a system that integrates power generation, power transformation, power transmission, and power distribution in order to supply AC power transformed by the transformer 3 to power receiving equipment of consumers, and is connected to, for example, unspecified loads. Hereinafter, in this specification, the AC power system 4 is also referred to as "system 4."

[0018] One end of the DC bus 5 is connected to the solar panel 2, and the other end is connected to a DC end (input end) of a three-phase integrated semiconductor unit 30 described later. The DC bus 5 supplies DC power generated by the solar panel 2 to the three-phase integrated semiconductor unit 30.

[0019] One end of the AC circuit 6 is connected to an AC end (output end) of a three-phase integrated semiconductor unit 30 described below, and the other end is connected to the system 4 via a transformer 3. The AC circuit 6 is, for example, a three-phase three-wire three-phase AC circuit that uses three wires, cables, and conductors to supply three-phase AC power obtained by combining three systems of single-phase AC in which the phases of current or voltage are shifted from one another. The AC circuit 6 supplies the AC power converted by the three-phase integrated semiconductor unit 30 to the system 4.

[0020] The power conversion device (PCS: Power Conditioning System) 10 is, for example, a power conversion device for photovoltaics (PV: Photovoltaics) (PV-PCS: Photovoltaics-Power Conditioning System). The power conversion device (PCS) 10 converts DC power supplied from a solar panel 2 into AC power, and outputs the converted AC power to a grid 4 side via a transformer 3. Hereinafter, in this specification, the power conversion device 10 is also referred to as "PCS 10." Note that the PCS 10 may be a power conversion device for an energy storage system (ESS) (ESS-PCS: Energy Storage System-Power Conditioning System).

[0021] The PCS 10 has a housing (board) 11, and has therein a DC switch 21, a three-phase integrated semiconductor unit 30, an AC filter 24, an AC switch 25, and a control device 40.

[0022] In the PCS 10, a DC switch 21 and a three-phase integrated semiconductor unit 30 are arranged in this order from the solar panel 2 side toward the three-phase integrated semiconductor unit 30 on a DC bus 5 connected to the solar panel 2. Various sensors are arranged between the solar panel 2 and the three-phase integrated semiconductor unit 30.

[0023] In the PCS 10, in an AC circuit 6 connected to a system 4 via a transformer 3, a three-phase integrated semiconductor unit 30, an AC filter 24, and an AC switch 25 are arranged in this order from the three-phase integrated semiconductor unit 30 toward the transformer 3 (system 4) side. Various sensors are arranged between the AC filter 24 and the transformer 3.

[0024] The specific layout structure inside the housing 11 of the PCS 10 will be described later (see FIGS. 3 to 5, etc.).

[0025] The DC switch (DC circuit breaker) 21 is provided in series between the solar panel 2 and the three-phase integrated semiconductor unit 30 in the DC bus 5. Hereinafter in this specification, the DC switch 21 is also referred to as a "DC circuit breaker 21" or a "DC (Direct Current) switch 21."

[0026] The AC filter 24 is also referred to as an AC (Alternating Current) filter, and is configured as an LC filter circuit (filter circuit) in which, for example, an AC reactor 24a and an AC capacitor 24b are connected in an L-shape. Hereinafter, in this specification, the AC filter 24 is also referred to as the "AC filter 24," the AC reactor 24a is also referred to as the "AC reactor 24a," and the AC capacitor 24b is also referred to as the "AC capacitor 24b."

[0027] The AC switch (AC circuit breaker) 25 is provided in series between the AC filter 24 and the transformer 3 in the AC circuit 6. Hereinafter in this specification, the AC switch 25 is also referred to as an "AC circuit breaker 25" or an "AC switch 25".

[0028] The three-phase integrated semiconductor unit 30 has a DC capacitor 22, which will be described later, a cooler 31, a semiconductor 32, and a gate driver board 33. One end side of the three-phase integrated semiconductor unit 30, which is a DC end, is connected to the DC switch 21 via a DC bus 5, and the other end side, which is an AC end, is connected to the AC filter 24 via an AC circuit 6.

[0029] The three-phase integrated semiconductor unit 30 has a plurality of switching elements (semiconductor elements 32) such as IGBTs (Insulated Gate Bipolar Transistors). The three-phase integrated semiconductor unit 30 acquires DC power supplied from the solar panel 2 from a DC end, converts the acquired DC power into AC power in accordance with control by a pulse width modulation signal (gate signal), and outputs the AC power from an AC end to supply it to the AC circuit 6. Hereinafter, in this specification, the three-phase integrated semiconductor unit 30 is also referred to as an "IGBT unit 30."

[0030] The DC capacitor 22 is provided between the DC switch 21 and the semiconductor 32, and is charged by DC power from the solar panel 2 to increase its voltage, and when the DC switch 21 is open, it is discharged by, for example, a discharge circuit or a discharge resistor (not shown) to decrease its voltage. Hereinafter, in this specification, the DC capacitor 22 is also referred to as the "DC capacitor 22."

[0031] Other specific configurations and arrangements of the three-phase integrated semiconductor unit (IGBT unit) 30 will be described later (see FIG. 2, etc.).

[0032] The control device 40 has, for example, a control board 41 described below, and although some wiring etc. are omitted in the figure, it is electrically connected to each element of the PCS 10, including the IGBT unit 30, via wires or wirelessly (see Figure 6, etc.).

[0033] The control device 40 has, for example, a processor (not shown) such as a CPU (Central Processing Unit) that operates by executing a program, and a memory (not shown). The control device 40 generally controls the operation of the PCS 10 by operating the processor (not shown) by executing, for example, a predetermined program stored in the memory (not shown). The control device 40 may control the operation of the PCS 10 according to instructions received from a higher-level device (not shown) or instructions received from an operator (not shown) via an operation unit (not shown).

[0034] The control device 40 generates a pulse width modulation (PWM) signal, which is a gate drive signal (gate signal) for a switching element (semiconductor element 32), based on, for example, a three-phase output voltage command signal and a triangular wave carrier signal. The control device 40 controls the switching element (semiconductor element 32) of the IGBT unit 30 by the generated gate signal, and comprehensively controls the operation of the IGBT unit 30. Hereinafter, in this specification, the pulse width modulation signal is also referred to as a "PWM signal," and the control based on the pulse width modulation signal is also referred to as "PWM control."

[0035] Fig. 2 is a diagram showing an example of the configuration of the IGBT unit 30 shown in Fig. 1. Fig. 2(a) is a side view showing an example of the configuration of a portion of the IGBT unit 30. Fig. 2(b) is a perspective view showing an example of the configuration of a portion of the IGBT unit 30. Fig. 2(c) is a side view showing an example of the overall configuration of the IGBT unit 30. Fig. 2(d) is a perspective view showing an example of the overall configuration of the IGBT unit 30.

[0036] As shown in FIGS. 2( a ) and 2 ( b ), the IGBT unit 30 includes a plurality of DC capacitors 22 , a cooler 31 , and a plurality of semiconductors 32 .

[0037] 2(a) and 2(b), the cooler 31 has a plurality of semiconductors 32 arranged in contact with its upper surface, and a plurality of DC capacitors 22 arranged adjacent to its front surface. The cooler 31 has, for example, a plurality of fins arranged in the flow of the refrigerant and a fan for circulating the refrigerant, and cools the plurality of semiconductor elements 32 in contact with it and other elements in the IGBT unit 30 by transferring heat radiated from the plurality of semiconductor elements 32 to the refrigerant.

[0038] The multiple semiconductors (semiconductor elements) 32 are arranged so as to abut against one surface of the cooler 31. The multiple semiconductors 32 are, for example, multiple switching elements such as IGBTs, and convert DC power into AC power according to control by a gate signal from a control device 40 (control board 41) via a gate driver board 33 described later.

[0039] As shown in FIGS. 2( c ) and 2 ( d ), the IGBT unit 30 further includes a gate driver substrate 33 , a main circuit conductor 34 , a support member 35 , a DC terminal 36 , and an AC terminal 37 .

[0040] 2(c) and 2(d), the gate driver board 33 is disposed on the upper part of a support member 35 that is disposed on the upper surface of the multiple semiconductors 32. The gate driver board 33 transmits gate signals output from a control device 40 (control board 41) to the gates of the multiple semiconductors (semiconductor elements) 32 to control the semiconductors 32.

[0041] 2(c) and 2(d), the main circuit conductor 34 (laminated bus bar) is disposed above the DC capacitor 22 and the semiconductor 32, with a DC terminal 36 provided on the cooler 31 side and an AC terminal 37 provided on the DC capacitor 22 side. The main circuit conductor 34 is, for example, a laminated bus bar in which a plurality of conductive layers and insulating layers are laminated in a predetermined arrangement from the DC terminal 36 to the AC terminal 37.

[0042] The support member 35 is supported by the cooler 31 in FIGS. 2(c) and 2(d) and disposed above the main circuit conductors 34, and the gate driver board 33 is disposed above the support member 35.

[0043] The DC terminal 36 is provided on the cooler 31 side of the main circuit conductor 34 in FIGS. 2(c) and 2(d), and is connected to the DC bus 5 outside the IGBT unit 30 (see FIG. 1, etc.).

[0044] 2(c) and 2(d), the AC terminal 37 is provided on the DC capacitor 22 side of the main circuit conductor 34 and is connected to the AC circuit 6 outside the IGBT unit 30 (see FIG. 1, etc.). As described below, the AC terminal 37 has three terminals, namely, AC terminal 37a, AC terminal 37b, and AC terminal 37c (see FIG. 9, etc.). The AC terminal 37a is an example of a "first AC terminal", the AC terminal 37b is an example of a "second AC terminal", and the AC terminal 37c is an example of a "third AC terminal".

[0045] FIG. 3 is a diagram showing an example of the arrangement of each component inside the housing 11 of the power conversion device 10 shown in FIG. 1. FIG. 3(a) is a front view showing an example of the arrangement of each component inside the housing 11 of the power conversion device 10 shown in FIG. 1. FIG. 3(b) is a side view showing an example of the arrangement of each component inside the housing 11 of the power conversion device 10 shown in FIG. 1. FIG. 3(c) is a rear view showing an example of the arrangement of each component inside the housing 11 of the power conversion device 10 shown in FIG. 1. FIG. 3(b) is a right side view of FIG. 3(a).

[0046] As shown in FIG. 3(a), when viewed from the front, the power conversion device 10 has, inside the housing 11, an air intake 12 at the upper level, a DC circuit breaker 21 at the middle left level, an AC circuit breaker 25 at the middle right level, a DC input unit 5a at the lower left level, and a control board 41, etc. at the lower right level.

[0047] 3(b), the power conversion device 10 has an AC circuit breaker 25 in the middle of the front side in a side view, and a control board 41 and the like in a lower front side in a side view. The power conversion device 10 has an air intake 12 in the upper center part in a side view, an IGBT unit 30 in the middle center part in a side view, and an AC reactor 24a in the lower center part in a side view. The power conversion device 10 also has a fan 13 in the lower rear side in a side view.

[0048] 3(c), the power conversion device 10 has an intake port 12 in an upper stage, IGBT units 30 on both the left and right sides of a middle stage, and fans 13 on both the left and right sides of a lower stage, in a rear view. The two IGBT units 30 arranged on both the left and right sides have the same structure from the viewpoint of manufacturability, etc.

[0049] In addition, in Figs. 3(a) to (c), the control board 41 etc. mounts a main control board 42 and a signal distribution board 43, which will be described later (see Fig. 6 etc.).

[0050] Fig. 4 is a side view showing an example of division between a semiconductor cooling area A and an electronic component area B in the layout structure inside the housing 11 of the power conversion device 10 shown in Fig. 3. Fig. 4(a) is a side view showing an example of the semiconductor cooling area A in the layout structure inside the housing 11 of the power conversion device 10 shown in Fig. 3. Fig. 4(b) is a side view showing an example of the electronic component area B in the layout structure inside the housing 11 of the power conversion device 10 shown in Fig. 3. Figs. 4(a) and (b) are right side views of Fig. 3(a) like Fig. 3(b).

[0051] In FIG. 4(a), the semiconductor cooling area A is, for example, the area on the outer left and right sides of the IGBT unit 30 and the AC reactor 24a when viewed from the front and back, and outside air is taken in through the air intake 12 and expelled from the fan 13 (see FIG. 5, etc.).

[0052] The air intake 12 is made of, for example, a punched metal sheet or the like, and actively takes in outside air to cool the semiconductor 32 (for the cooler 31 that cools the semiconductor 32). The semiconductor cooling area A is an area where improving cooling performance is more important than reducing the risk of contamination by outside air. The cooler 31, which is one of the IGBT units 30 and for which improving cooling performance is more important than reducing the risk of contamination by outside air, is placed in the semiconductor cooling area A (see FIG. 5, etc.). The air intake 12 is an example of a "first air intake".

[0053] Fan (cooling fan) 13 is provided on the rear side of the lower part of housing 11. As shown by the arrows indicating the flow of air in Fig. 4(a), outside air is taken in through intake port 12, passes through semiconductor cooling area A, and is exhausted from fan (cooling fan) 13.

[0054] 4(b), the electronic component area B is, for example, an inner area when viewed from the front and rear (see FIG. 5, etc.), and air is taken in through an air intake 14 dedicated to the electronic component area B provided on the front side of the housing 11. Although the electronic component area B has a smaller air volume than the semiconductor cooling area A, cleaner air is taken in than the semiconductor cooling area A.

[0055] The air intake 14 has, for example, an air filter 14a, and takes in clean air through the air filter 14a. The electronic component area B is an area where minimizing the risk of contamination by outside air is more important than improving cooling performance. In the electronic component area B, the semiconductor 32 and the gate driver board 33 of the IGBT unit 30, which need to be isolated from the outside air that may be contaminated, are arranged facing each other (see FIG. 5, etc.). The air intake 14 is an example of a "second air intake".

[0056] 2, the IGBT unit 30 is designed in advance so that the areas are physically separated by, for example, a partition wall or sheet metal of the cooler 31 so that the semiconductor 32 and the gate driver board 33 are not exposed to the outside air. Also, the semiconductor cooling area A and the electronic component area B are designed so that the intake parts are different, that is, intake port 12 and intake port 14, and are structurally separated inside the housing 11.

[0057] 4(b), as shown by the arrows indicating the flow of air, clean air taken in from air intake 14 passes through electronic component area B and is exhausted from fan (cooling fan) 13. That is, in this embodiment, the exhaust portion is common to semiconductor cooling area A and electronic component area B, and the outside air that has flowed through semiconductor cooling area A and the clean air that has flowed through electronic component area B join together and are exhausted from the same fan 13. However, this is not limited to this, and the outside air that has flowed through semiconductor cooling area A and the clean air that has flowed through electronic component area B may be exhausted separately without joining together.

[0058] FIG. 5 is a rear view showing an example of division into a semiconductor cooling area A and an electronic component area B in the layout structure inside the housing 11 of the power conversion device 10 shown in FIG.

[0059] 5, as explained in FIG 3(c), the housing (panel) 11 of the power conversion device 10 has an air intake 12 in the upper section when viewed from the rear, IGBT units 30 on both the left and right sides of the middle section, and fans (cooling fans) 13 on both the left and right sides of the lower section. As shown in FIG 5, the outer left and right sides are semiconductor cooling areas A, and the inner side is electronic component area B. As explained in FIG 3(c), the two IGBT units 30 on both the left and right sides have the same structure from the viewpoint of manufacturability, etc.

[0060] 4(a), the semiconductor cooling area A is an area where outside air is actively taken in from the intake port 12, and the cooler 31 and the AC reactor 24a, which are parts of the IGBT unit 30 that do not need to be isolated from the outside air that may be contaminated, are arranged therein. As a result, the coolers 31 are arranged on the outside of the left and right sides of the IGBT unit 30.

[0061] On the other hand, as explained in FIG. 4(b), clean air is taken into the electronic component area B through an air intake 14 dedicated to the electronic component area B having an air filter 14a provided on the front side of the housing 11. The electronic component area B has a smaller air volume than the semiconductor cooling area A, but is an area that takes in cleaner air than the semiconductor cooling area A. The semiconductor 32 and gate driver board 33 of the IGBT unit 30 that need to be isolated from the outside air that may be contaminated are arranged in the electronic component area B. As a result, the semiconductor 32 and gate driver board 33 are arranged facing each other inside the IGBT unit 30.

[0062] As shown by the arrows indicating the flow of air in Fig. 5, outside air taken in through intake port 12 passes through semiconductor cooling area A and is exhausted from fan (cooling fan) 13. In addition, although not shown in Fig. 5, clean air taken in through intake port 14 passes through electronic component area B, merges with the outside air, and is exhausted from fan (cooling fan) 13 (see Fig. 4(b) etc.).

[0063] According to the above configuration, the outside of the IGBT unit 30 and AC reactor 24a in the power conversion device 10 (housing 11) can be divided into a semiconductor cooling area A and the inside into an electronic component area B. This improves environmental resistance by arranging the semiconductor 32 and the gate driver board 33, which are at risk of being contaminated and need to be isolated from the outside air, facing each other in the electronic component area B. Furthermore, according to the above configuration, the cooling flow path for the IGBT unit 30 is simplified, enabling a layout with less pressure loss.

[0064] 6 and 7 are diagrams illustrating an example of a control configuration of the power conversion device 10 illustrated in FIGS.

[0065] 6 and 7, inside the housing 11 of the power conversion device 10, the control board 41 in the control device 40 has a main control board 42 and a signal distribution board 43. In addition, each of the IGBT units 30 arranged on the left and right sides in the front and rear views of the housing 11 of the power conversion device 10 has a gate driver board 33.

[0066] The main control board 42 is a board that actually performs control, and generates and outputs a gate signal that turns on and off the gate of the semiconductor (semiconductor element) 32 of the IGBT unit 30.

[0067] The signal distribution board 43 is a board that switches (distributes) wiring in order to transmit the signal output from the main control board 42 to each gate driver board 33. The signal distribution board 43 divides (distributes) the signal output from the main control board 42 and outputs it to each gate driver board 33.

[0068] The gate driver board 33 is a board that transmits electrical signals output from the control board 41 to the gates of multiple semiconductors (semiconductor elements) 32 after isolating them using, for example, a photocoupler, thereby controlling the semiconductors 32 (see FIG. 2, etc.).

[0069] Based on the gate signal output from the main control board 42 and distributed by the signal distribution board 43 to each gate driver board 33, the IGBT unit 30 converts the DC power supplied from the DC terminal 36 into AC power and outputs it from the AC terminal 37. At this time, as shown in Fig. 7, the DC power is branched into two and supplied to the two IGBT units 30, and the AC powers converted and output by the two IGBT units 30 are output from the two IGBT units 30 and then merged into one.

[0070] Fig. 8 is a diagram showing an example of an arrangement structure of the IGBT units 30 in the power conversion device 10 and a control structure of a conventional signal distribution board 43'. Fig. 8(a) is a diagram showing an example of an arrangement structure of the IGBT units 30 in the power conversion device 10. Fig. 8(b) is a diagram showing an example of a control structure of the conventional signal distribution board 43' in the power conversion device 10.

[0071] 1 to 5, in this embodiment, when two IGBT units 30 are arranged in the housing 11, the semiconductor 32 and the gate driver board 33 are arranged facing each other in the electronic component area B (see FIG. 5, etc.). As described above, the two IGBT units 30 on both the left and right sides have the same structure from the viewpoint of manufacturability, etc. For this reason, as described in FIGS. 6 and 7, in order to combine the AC powers output from the two IGBT units 30 into one, the U phases must be connected to each other, the V phases must be connected to each other, and the W phases must be connected to each other.

[0072] 8(a), when two IGBT units 30 having the same structure are simply arranged opposite each other, the U-phase AC terminal 37a and the W-phase AC terminal 37c are arranged opposite each other. Therefore, when connecting U phases, V phases, and W phases, the AC terminal 37a and the AC terminal 37c must be connected, and the connections of the U phase, V phase, and W phase are crossed (intersecting).

[0073] 8(b), conventionally, when the signal distribution board 43' distributes a signal to two IGBT units 30, the same signal is sent to each of the AC terminals 37a to 37c of the two IGBT units 30. That is, the signal distribution board 43' sends a U-phase signal to each of the AC terminals 37a of the two IGBT units 30, sends a V-phase signal to each of the AC terminals 37b, and sends a V-phase signal to each of the AC terminals 37a to 37c of the two IGBT units 30 via the gate driver board 33. c To W Sends phase signals.

[0074] 8(b), when the U phases are connected to each other, the V phases are connected to each other, and the W phases are connected to each other, AC terminal 37a and AC terminal 37c must be connected, which causes a problem of crossing the connections of the U phases, V phases, and W phases. When the connections of the U phases, V phases, and W phases are crossed, the connection distance of each conductor becomes longer, and more conductors are used than when the connections are made over the shortest distance.

[0075] Fig. 9 is a diagram showing an example of an arrangement structure of the IGBT units 30 and a control configuration of the signal distribution board 43 in the power conversion device 10 according to the first embodiment. Fig. 9(a) is a diagram showing an example of an arrangement structure of the IGBT units 30 in the power conversion device 10 according to the first embodiment. Fig. 9(b) is a diagram showing an example of a control configuration of the signal distribution board 43 in the power conversion device 10 according to the first embodiment.

[0076] As shown in FIG. 9(a), in this embodiment, the AC terminals 37a, 37b, and 37c of one IGBT unit 30 are U-phase, V-phase, and W-phase, respectively, and the AC terminals 37a, 37b, and 37c of the other IGBT unit 30 are W-phase, V-phase, and U-phase, respectively. Therefore, as shown in FIG. 9(a), even when two IGBT units 30 having the same structure are arranged facing each other from the viewpoint of manufacturability, etc., the U-phase AC terminal 37a and the U-phase AC terminal 37c are arranged facing each other. Similarly, the V-phase AC terminal 37b and the V-phase AC terminal 37b are arranged facing each other, and similarly, the W-phase AC terminal 37c and the W-phase AC terminal 37a are arranged facing each other. As a result, when the U-phases, the V-phases, and the W-phases are connected to each other, the connections do not cross (intersect), and the U-phases, the V-phases, and the W-phases are connected to each other at the shortest distance.

[0077] 9(b), when the signal distribution board 43 according to this embodiment distributes signals to two IGBT units 30, it sends U-phase, V-phase, and W-phase signals to AC terminals 37a, 37b, and 37c in that order to one IGBT unit 30. On the other hand, the signal distribution board 43 switches the wiring to the other IGBT unit 30 so that the U-phase and W-phase signals are inverted, and sends W-phase, V-phase, and U-phase signals to AC terminals 37a, 37b, and 37c in that order.

[0078] 9(b), when U-phases are connected to each other, the U-phase AC terminal 37a and the U-phase AC terminal 37c arranged in front of the U-phase AC terminal 37a are connected face-to-face at the shortest distance without crossing. Similarly, when V-phases are connected to each other, the V-phase AC terminal 37b and the V-phase AC terminal 37b arranged in front of the V-phase AC terminal 37b are connected face-to-face at the shortest distance without crossing. Similarly, when W-phases are connected to each other, the W-phase AC terminal 37c and the W-phase AC terminal 37a arranged in front of the W-phase AC terminal 37c are connected face-to-face at the shortest distance without crossing.

[0079] Therefore, according to this embodiment, the connections of the U phase, V phase, and W phase do not become intertwined, and the connection distance of each conductor does not become long. Furthermore, since the U phases, V phases, and W phases are connected at the shortest distance, the amount of conductors used can be reduced compared to the conventional art, and the conductor connections can be simplified and optimized. One IGBT unit 30 is an example of a "first three-phase integrated semiconductor unit," and the other IGBT unit 30 is an example of a "second three-phase integrated semiconductor unit."

[0080] <Effects of the First Embodiment> 1 to 7 and 9, the outside of the power conversion device 10 (housing 11) is divided into a semiconductor cooling area A and the inside is divided into an electronic component area B, and the IGBT units 30 are arranged facing each other. As a result, according to this embodiment, even when two (multiple) IGBT units 30 are arranged inside the housing 11, the cooling flow path becomes simple, and a layout with less pressure loss can be achieved.

[0081] 1 to 7 and 9, the cooler 31 of the IGBT unit 30 is disposed in the semiconductor cooling area A where outside air is actively taken in and where improvement of cooling performance is prioritized over suppression of the risk of contamination by outside air. As a result, according to this embodiment, even when two (multiple) IGBT units 30 are disposed in the housing 11, the cooling performance of the semiconductor 32 is guaranteed.

[0082] 1 to 7 and 9, of the two (plural) IGBT units 30, the semiconductor 32 and the gate driver board 33 that need to be isolated from the outside air that may be contaminated are arranged facing each other in the electronic component area B. As a result, the semiconductor 32 and the gate driver board 33 that need to be isolated from the outside air that may be contaminated are arranged in the electronic component area B, which takes in clean air, although the air volume is smaller than that in the semiconductor cooling area A. Therefore, according to this embodiment, it is possible to improve environmental resistance.

[0083] According to the first embodiment shown in FIG. 1 to FIG. 7 and FIG. 9, when the signal distribution board 43 distributes signals to two (plural) IGBT units 30, it sends U-phase, V-phase, and W-phase signals to the AC terminals 37a, 37b, and 37c in that order to one IGBT unit 30. On the other hand, the signal distribution board 43 sends W-phase, V-phase, and U-phase signals to the AC terminals 37a, 37b, and 37c in that order to the other IGBT unit 30 by switching the wiring so that the U-phase and W-phase signals are inverted. As a result, according to this embodiment, even if two (plural) IGBT units 30 are arranged in the housing 11, the connections of the U-phase, V-phase, and W-phase do not cross (intersect) and become complicated, and the connection distance of each conductor is prevented from becoming long. Therefore, according to this embodiment, the U-phases, the V-phases, and the W-phases face each other, and the conductors are connected at the shortest distance, so that the amount of conductors used can be reduced compared to the conventional art, and the connection of the conductors can be simplified and optimized.

[0084] 1 to 7 and 9, the control configuration of the signal distribution board 43 is changed, and the wiring of one of the opposing IGBT units 30 is not swapped, but the wiring of only the other IGBT unit 30 is swapped so that the U-phase and W-phase signals are inverted. As a result, according to this embodiment, even when two (a plurality of) IGBT units 30 are arranged in the housing 11, the two IGBT units 30 can have the same structure, thereby improving manufacturability and replaceability.

[0085] <Second embodiment> FIG. 10 is a diagram showing an example of the arrangement of each component in the power conversion device 10A according to the second embodiment and the division between the semiconductor cooling area A and the electronic component area B. FIG. 10(a) is a side view showing an example of the arrangement of each component in the power conversion device 10A according to the second embodiment and the division between the semiconductor cooling area A and the electronic component area B. FIG. 10(b) is a rear view showing an example of the arrangement of each component in the power conversion device 10A according to the second embodiment and the division between the semiconductor cooling area A and the electronic component area B. In FIG. 10, the same reference numerals are used for the same or similar components as those in the first embodiment shown in FIGS. 1 to 7 and 9, and detailed description thereof will be omitted or simplified.

[0086] 1 to 7 and 9, the power converter 10 according to the first embodiment has an air intake 14 having an air filter 14a provided on the front side of the housing 11 for exclusive use with the electronic component area B (see FIG. 4, etc.). In the power converter 10 according to the first embodiment, clean air taken in from the air intake 14 via the air filter 14a passes through the electronic component area B, then merges with the outside air of the semiconductor cooling area A, and is exhausted from the shared fan 13.

[0087] On the other hand, as shown in FIG. 10, in the power conversion device 10A according to the second embodiment, a heat exchanger 15 is provided on the front side of the housing 11A instead of the air filter 14a, and, for example, a partition wall 16 is arranged between the electronic component area B and the fan 13.

[0088] The heat exchanger 15 absorbs heat from the clean air (internal air) that has been heated by heat radiation from the semiconductors 32 and the like in the electronic component area B, thereby cooling it.

[0089] Partition 16 is, for example, a metal plate or the like, and blocks the exhaust portion on the electronic component area B side inside housing (panel) 11A (between electronic component area B and fan 13). Note that what blocks the exhaust portion on the electronic component area B side is not limited to partition 16. For example, power conversion device 10A (housing 11) may originally have a structure in which the exhaust portion on the electronic component area B side is blocked.

[0090] 10(a), as shown by the arrows indicating the flow of air, the clean air (internal air) heated in the electronic component area B is cooled by the heat exchanger 15. Then, because the exhaust portion on the side of the electronic component area B inside the housing (panel) 11A is blocked by the partition wall 16, the internal air in the electronic component area B does not merge with the external air in the semiconductor cooling area A, and is separated from the external air exhausted from the fan 13. As a result, in the power conversion device 10A according to the second embodiment, the internal air and the external air are completely separated, and only the cooling wind of the internal air that has been cooled by absorbing heat by the heat exchanger 15 circulates and flows in the electronic component area B. Then, only the external air is exhausted from the fan 13.

[0091] <Effects of the Second Embodiment> As described above, the second embodiment shown in FIG. 10 has the same effects as the first embodiment shown in FIGS.

[0092] Moreover, according to the second embodiment shown in FIG. 10, the inside and outside air can be completely separated, so that the electronic component area B can be kept cleaner than in the first embodiment, and environmental resistance can be further improved.

[0093] 10, since the inside and outside air can be completely separated, it is possible to take in outside air more actively into the semiconductor cooling area A without worrying about the risk of contamination, as compared to the first embodiment. As a result, according to this embodiment, it is possible to improve the cooling performance and ensure the cooling performance more than the first embodiment.

[0094] <Third embodiment> Fig. 11 is a diagram showing an example of an arrangement structure of the IGBT unit 30 in a power conversion device 10B according to the third embodiment. In Fig. 11, the same or similar configurations as those of the first embodiment shown in Figs. 1 to 7 and 9 are denoted by the same reference numerals, and detailed description thereof will be omitted or simplified.

[0095] As shown in Fig. 11, in a power conversion device 10B according to the third embodiment, four IGBT units 30 are arranged inside a housing 11B. As in the first embodiment shown in Figs. 1 to 7 and 9, the IGBT units 30 are arranged facing each other, and pairs of two IGBT units 30 arranged facing each other are arranged above and below. As in the first embodiment, the U phases, V phases, and W phases of the pairs of IGBT units 30 arranged facing each other are connected at the shortest distance on the opposing front sides, and further the upper and lower U phases, V phases, and W phases are connected in the vertical direction, respectively.

[0096] That is, in the third embodiment, the signal distribution board 43 has the same configuration as in the first embodiment, and therefore the control configuration of the signal distribution board 43 is changed. In other words, the wiring of one IGBT unit 30 arranged facing each other is not switched by the signal distribution board 43, and the wiring of the other IGBT unit 30 is switched by the signal distribution board 43 so that the U-phase and W-phase signals are inverted by the signal distribution board 43. For this reason, in the third embodiment, the U-phases, V-phases, and W-phases of the IGBT units 30 arranged facing each other are connected at the shortest distance on the opposing front sides, and further the upper and lower U-phases, V-phases, and W-phases can be connected in the vertical direction, respectively.

[0097] The number of IGBT units 30 in the third embodiment is not limited to four, and may be any even number, such as six. In this case, pairs of two IGBT units 30 arranged facing each other are arranged two by two in the vertical direction. The conductors of the U-phase, V-phase, and W-phase of the IGBT units 30 arranged in the vertical direction are connected face-to-face in the horizontal direction, and are further connected in the vertical direction.

[0098] <Effects of the Third Embodiment> As described above, in the third embodiment shown in FIG. 11, even when an even number of four or more IGBT units 30 are arranged in the housing 11B, the same effects as those of the first embodiment shown in FIGS. 1 to 7 and 9 can be obtained.

[0099] In addition, in the third embodiment shown in FIG. 11, similarly to the case where two IGBT units 30 are arranged, by reversing the U phase and W phase of one IGBT unit 30, it becomes easy to connect the conductors of each phase facing each other, and also to connect the conductors of each phase above and below.

[0100] <First Comparative Example> Fig. 12 is a diagram showing an example of an arrangement structure of the IGBT unit 130 in the power conversion device 110 according to the first comparative example. Fig. 12(a) is a perspective view showing an example of an arrangement structure of the IGBT unit 130 in the power conversion device 110 according to the first comparative example. Fig. 12(b) is a side view showing an example of an arrangement structure of the IGBT unit 130 in the power conversion device 110 according to the first comparative example.

[0101] The power conversion device 110 according to the first comparative example is, for example, an outdoor unit of a side-by-side panel type, and as shown in Figs. 12(a) and (b), one IGBT unit 130 is arranged for one panel (housing) 111, and a fan 113 is arranged below the IGBT unit 130. In recent years, for example, in the power conversion device 110 for photovoltaic power generation or storage battery, the number of semiconductor elements such as IGBTs tends to increase with the increase in inverter capacity, and it has become necessary to arrange multiple IGBT units 130 for one panel 111. However, in the structure of the first comparative example shown in Fig. 12, multiple IGBT units 130 cannot be arranged for one panel 111.

[0102] On the other hand, according to the first to third embodiments shown in Figures 1 to 7 and 9 to 11, it is possible to arrange a plurality of IGBT units 30. Moreover, according to the first to third embodiments shown in Figures 1 to 7 and 9 to 11, it is possible to reduce the amount of conductors used and simplify and optimize conductor connections while improving environmental resistance, ensuring cooling performance, simplifying the cooling flow paths, and improving replaceability compared to the first comparative example.

[0103] <Second Comparative Example> Fig. 13 is a diagram showing an example of an arrangement structure of the IGBT unit 230 in the power conversion device 210 according to the second comparative example. Fig. 13(a) is a perspective view showing an example of an arrangement structure of the IGBT unit 230 in the power conversion device 210 according to the second comparative example. Fig. 13(b) is a side view showing an example of an arrangement structure of the IGBT unit 230 in the power conversion device 210 according to the second comparative example.

[0104] As shown in Figs. 13(a) and 13(b), the power converter 210 is, for example, an indoor unit, and a plurality of IGBT units 230 are arranged in a multi-layered manner on a single board (housing) 211, like a server rack. In this case, a plurality of fans 213 must be arranged in a single board 211 in a horizontal direction with the IGBT units 230 according to the number of the IGBT units 230. This is because, for example, when the fan 213 is arranged at the bottom as in the first comparative example shown in Fig. 12, the upper IGBT units 230 and the lower IGBT units 230 stacked in a multi-layered manner as in a server rack cannot be uniformly cooled. For this reason, in the structure of the second comparative example shown in Fig. 13, when attempting to uniformly cool a plurality of IGBT units 230, a large number of fans 213 are used.

[0105] On the other hand, according to the first to third embodiments shown in Figures 1 to 7 and 9 to 11, even when a plurality of IGBT units 30 are arranged, it is possible to reduce the number of fans 13 used compared to the second comparative example shown in Figure 13. Furthermore, according to the first to third embodiments shown in Figures 1 to 7 and 9 to 11, it is possible to reduce the amount of conductors used and simplify and optimize conductor connections while improving environmental resistance, ensuring cooling performance, simplifying the cooling flow paths, and improving replaceability compared to the second comparative example.

[0106] <Third Comparative Example> FIG. 14 is a diagram showing an example of an arrangement structure of IGBT units 330 in a power conversion device 310 according to a third comparative example.

[0107] 14, in a power conversion device 310, a plurality of IGBT units 330 are arranged in multiple layers on a board (housing) 311 like a server rack, as in the second comparative example shown in Fig. 13. In Fig. 14, above the IGBT units 330 is an electronic component area B in which, for example, semiconductors 32, gate driver boards 33, etc. are arranged, and below is a semiconductor cooling area A in which, for example, coolers 31, etc. are arranged.

[0108] For example, in the structure of the third comparative example shown in FIG. 14, when the area is divided, the electronic component area B has less contamination from outside air and a smaller air volume than the semiconductor cooling area A, so a structure as simple as possible is advantageous in terms of cooling with less pressure loss. However, when the IGBT units 330 are stacked in multiple stages in a vertical line as in the third comparative example, if the area is divided (separated into inside and outside air), the electronic component area B will have a complex structure because precision machinery such as the gate driver board 33 is mounted therein. In addition, in the first place, in the arrangement structure in which the IGBT units 330 are stacked in multiple stages in a vertical line as in the third comparative example, it is difficult to divide the electronic component area B, where the gate driver board 33 and the like that need to be protected from contamination from outside air are arranged within the IGBT unit 330, from the semiconductor cooling area A.

[0109] On the other hand, according to the first to third embodiments shown in Figures 1 to 7 and 9 to 11, the IGBT units 30 are arranged facing each other, so the structure of the electronic component area B is simpler than that of the third comparative example shown in Figure 14, and pressure loss is small, allowing for efficient cooling. And, according to the first to third embodiments shown in Figures 1 to 7 and 9 to 11, while improving environmental resistance, ensuring cooling performance, simplifying the cooling flow path, and improving replaceability compared to the third comparative example, it is possible to reduce the amount of conductors used, and simplify and optimize conductor connections.

[0110] <Supplementary information for the embodiment> As described above, according to the first to third embodiments shown in Figures 1 to 7 and 9 to 11, the first embodiment shown in Figures 1 to 7 and 9, the second embodiment shown in Figure 10, and the third embodiment shown in Figure 11 are separated, but these embodiments may be combined in series or in parallel. The combined embodiments can also achieve the same effects as the respective embodiments before being combined.

[0111] The features and advantages of the embodiments will be apparent from the above detailed description. It is intended that the claims cover the features and advantages of the embodiments as described above without departing from the spirit and scope of the claims. In addition, any improvements and modifications can be easily made by a person having ordinary skill in the art. Therefore, it is not intended to limit the scope of the inventive embodiments to the above, and appropriate improvements and equivalents within the scope of the embodiments disclosed can be used. [Explanation of symbols]

[0112] 1...Photovoltaic power generation system (power conversion system); 2...Solar panel; 3...Transformer; 4...AC power system (system); 5...DC busbar; 5a...DC input section; 6...AC circuit; 10, 10A, 10B...Power conversion device (PCS); 11, 11A, 11B...Housing (panel); 12...Air intake (first air intake); 13...Fan (cooling fan); 14...Air intake (second air intake); 14a...Air filter; 15...Heat exchanger; 16...Partition (sheet metal); 21...DC switch (DC circuit breaker, DC switch); 22...DC capacitor (DC capacitor); 24...AC filter (AC filter); 24a...AC reactor (AC reactor); 24b...AC capacitor (AC capacitor); 25...AC switch (AC circuit breaker, AC switch); 30...Three-phase integrated semiconductor unit (IGBT unit, first three-phase integrated semiconductor unit, second three-phase integrated semiconductor unit); 31...Cooling device; 32...semiconductor (semiconductor element, IGBT); 33...gate driver board; 34...main circuit conductor (laminated bus bar); 35...support member; 36...DC terminal; 37...AC terminal; 37a...AC terminal (first AC terminal); 37b...AC terminal (second AC terminal); 37c...AC terminal (third AC terminal); 40...control device; 41...control board; 42...main control board; 43, 43'...signal distribution board; 110...power conversion device (PCS); 111...casing (panel); 113...fan (cooling fan); 130...three-phase integrated semiconductor unit (IGBT unit); 210...power conversion device (PCS); 211...casing (panel); 213...fan (cooling fan); 230...three-phase integrated semiconductor unit (IGBT unit); 310...power conversion device (PCS); 311...casing (panel); 330...three-phase integrated semiconductor unit (IGBT unit); A...semiconductor cooling area; B...electronic component area

Claims

1. A power conversion device comprising: a housing; and a first three-phase integrated semiconductor unit and a second three-phase integrated semiconductor unit, each having the same structure, disposed within the housing; The first three-phase integrated semiconductor unit and the second three-phase integrated semiconductor unit are Each of the gate drivers includes a cooler, a semiconductor, a gate driver substrate, a first AC terminal, a second AC terminal, and a third AC terminal; the cooler is disposed on the outside of the housing, and the semiconductor, the gate driver board, the first AC terminal, the second AC terminal, and the third AC terminal are disposed on the inside of the housing, and the first AC terminal, the second AC terminal, and the third AC terminal are disposed opposite each other within the housing; The first three-phase integrated semiconductor unit is configured such that a U-phase signal is transmitted to the first AC terminal, a V-phase signal is transmitted to the second AC terminal, and a W-phase signal is transmitted to the third AC terminal by a signal distribution board included in the power conversion device, The second three-phase integrated semiconductor unit is configured such that wiring is switched by the signal distribution board included in the power conversion device so that a U-phase and a W-phase are inverted, a W-phase signal is transmitted to the first AC terminal, a V-phase signal is transmitted to the second AC terminal, and a U-phase signal is transmitted to the third AC terminal. A power conversion device comprising:

2. 2. The power conversion device according to claim 1, The first AC terminal of the first three-phase integrated semiconductor unit and the third AC terminal of the second three-phase integrated semiconductor unit, to which the U-phase signal is respectively transmitted by the signal distribution board, are connected to each other on the front side facing each other inside the housing, The second AC terminal of the first three-phase integrated semiconductor unit and the second AC terminal of the second three-phase integrated semiconductor unit, to which the V-phase signal is respectively transmitted by the signal distribution board, are connected to each other on the front side facing each other inside the housing, The third AC terminal of the first three-phase integrated semiconductor unit and the first AC terminal of the second three-phase integrated semiconductor unit, to which the W-phase signal is respectively transmitted by the signal distribution board, are connected face to face inside the housing. A power conversion device comprising:

3. 2. The power conversion device according to claim 1, The housing includes: A first intake port that takes in outside air to cool a semiconductor cooling area on the outside of the housing; a second intake port that takes in clean air through an air filter to cool an electronic component area inside the housing; A cooling fan, Equipped with the semiconductor cooling area and the electronic component area are separated within the housing so that only the outside air taken in from the first air intake port flows into the semiconductor cooling area, and only the clean air taken in from the second air intake port via the air filter flows into the electronic component area; The cooling fan is configured to exhaust the outside air and the clean air that flow separately inside the housing and then merge. A power conversion device comprising:

4. 2. The power conversion device according to claim 1, The housing includes: A first intake port that takes in outside air to cool a semiconductor cooling area on the outside of the housing; a heat exchanger that absorbs heat from the internal air that cools the electronic component area inside the housing; A cooling fan, Equipped with the semiconductor cooling area and the electronic component area are separated within the housing so that only the outside air taken in from the first air intake port flows into the semiconductor cooling area, and only the inside air that has been cooled by absorbing heat through the heat exchanger circulates and flows into the electronic component area, The cooling fan is configured to exhaust only the outside air. A power conversion device comprising:

5. 3. The power conversion device according to claim 2, A plurality of sets of the first three-phase packaged semiconductor unit and the second three-phase packaged semiconductor unit are arranged in a vertical direction within the housing, The first AC terminals of the first three-phase integrated semiconductor units and the third AC terminals of the second three-phase integrated semiconductor units, which are connected to each other in a front-to-front manner inside the housing, are further connected in a vertical direction, The second AC terminals of the first three-phase integrated semiconductor units and the second AC terminals of the second three-phase integrated semiconductor units, which are connected to each other face-to-face inside the housing, are further connected in a vertical direction, The third AC terminals of the first three-phase integrated semiconductor units and the first AC terminals of the second three-phase integrated semiconductor units, which are connected to each other in a front-to-front manner inside the housing, are further connected in a vertical direction. A power conversion device comprising:

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