Processing Equipment

Abstract

To provide a technique to properly clean a transparent window provided in a chamber.SOLUTION: A processing unit related to a technique disclosed in the present specification includes: a chamber having at least one transparent window; a plasma production part for producing a plasma and introducing gas containing active species due to the plasma into the chamber; and an exhaust part for exhausting the gas in the chamber. The plasma production part and the exhaust part are arranged at positions where the transparent window are sandwiched therebetween in plan view of the transparent window.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The technology disclosed herein relates to processing in a chamber having a transparent window. [Background technology]

[0002] In an apparatus for performing processing in a chamber such as a vacuum chamber, a transparent window (transparent window) may be provided in a wall of the chamber for the purpose of checking the inside of the chamber from outside the chamber or for the purpose of performing optical processing on an object inside the chamber from outside the chamber (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 3195508 Summary of the Invention [Problem to be solved by the invention]

[0004] The transparent window may become dirty due to processing performed inside the chamber. The dirt on the transparent window may cause problems when the inside of the chamber is checked from outside the chamber or when optical processing is performed on an object inside the chamber from outside the chamber. Therefore, it is desirable to properly clean the transparent window.

[0005] The technology disclosed in this specification has been made in consideration of the problems described above, and is a technology for appropriately cleaning a transparent window provided in a chamber. [Means for solving the problem]

[0006] A processing apparatus according to a first aspect of the technology disclosed in the present specification includes a chamber having at least one transparent window, a plasma generating unit for generating plasma and introducing a gas containing activated species produced by the plasma into the chamber, and an exhaust unit for exhausting the gas from within the chamber, the plasma generating unit and the exhaust unit being disposed at positions sandwiching the transparent window in a plan view of the transparent window. The plasma generating unit is provided in the chamber, and the plasma generating unit includes a rod-shaped hollow conductive member and a cylindrical insulating member that encases the conductive member. A cooling medium is filled in the conductive member, and a voltage is applied intermittently to the conductive member. .

[0007] A processing apparatus according to a second aspect of the technology disclosed in the present specification is related to the processing apparatus according to the first aspect, and the plasma generating section and the exhaust section are both disposed adjacent to the transparent window.

[0011] The first aspect of the technology disclosed in this specification 3 The processing device according to the embodiment includes: OR 2 The present invention relates to a processing apparatus of the above aspect, further comprising a partition section provided within the chamber for dividing the space within the chamber to form a closed space, and the closed space is faced by an inlet of the plasma generation section for introducing the gas into the chamber, an exhaust port of the exhaust section for exhausting the gas within the chamber to the outside of the chamber, and the transparent window.

[0012] The first aspect of the technology disclosed in this specification 4 The processing device according to the embodiment includes first to 3 In the present invention, the activated species includes oxygen radicals.

[0013] The first aspect of the technology disclosed in this specification 5 The processing device according to the embodiment includes first to 4 In the processing apparatus according to any one of the above aspects, the inside of the chamber is in a vacuum or reduced pressure atmosphere.

[0014] The first aspect of the technology disclosed in this specification 6 The processing device according to the embodiment includes first to 5In the processing apparatus according to any one of the above aspects, a plurality of the transparent windows are provided, and the plasma generating section and the exhaust section are disposed with the plurality of transparent windows interposed therebetween.

[0015] The first aspect of the technology disclosed in this specification 7 The processing device according to the embodiment of the present invention comprises: 6 In the processing apparatus according to the aspect of the present invention, the plasma generating unit and the exhaust unit are arranged with a plurality of the transparent windows arranged in a direction connecting the plasma generating unit and the exhaust unit therebetween.

[0016] The first aspect of the technology disclosed in this specification 8 The processing device according to the embodiment of the present invention comprises: 6 In the processing apparatus according to the aspect of the present invention, the plasma generating unit and the exhaust unit are arranged with a plurality of the transparent windows arranged in a direction intersecting a direction connecting the plasma generating unit and the exhaust unit.

[0017] The first aspect of the technology disclosed in this specification 9 The processing device according to the embodiment includes first to 8 The present invention relates to a processing apparatus according to any one of the above aspects, further comprising an irradiation unit that irradiates light into the chamber through the transparent window. Effect of the Invention

[0018] According to at least the first aspect of the technology disclosed in the present specification, the plasma generating unit and the exhaust unit are disposed at positions sandwiching the transparent window, so that the gas containing the activated species generated by the plasma can easily pass through the transparent window and be exhausted from the exhaust unit. This makes it easier for the activated species in the gas to reach the transparent window, so that the transparent window can be effectively cleaned.

[0019] Furthermore, objects, features, aspects and advantages associated with the technology disclosed herein will become more apparent from the detailed description set forth below and the accompanying drawings. [Brief description of the drawings]

[0020] [Figure 1]1 is a perspective view showing an example of the configuration of a vacuum processing apparatus according to an embodiment; [Diagram 2] 1 is a cross-sectional view showing an example of an internal configuration and a peripheral configuration of a vacuum chamber of a vacuum processing apparatus according to an embodiment. [Diagram 3] 3 is an enlarged cross-sectional view showing the periphery of the transparent window in FIG. 2. [Figure 4] 11 is a cross-sectional view showing a modified example of the internal configuration and peripheral configuration of the vacuum chamber of the vacuum processing apparatus according to the embodiment. [Diagram 5] 5 is a plan view showing a configuration of a periphery of a plurality of transparent windows in FIG. 4. [Figure 6] 13 is a plan view showing a modified example of the configuration of the periphery of a plurality of transparent windows. FIG. [Figure 7] 11A and 11B are cross-sectional views showing modified examples of the configuration of the periphery of the transparent window. [Figure 8] 11 is a cross-sectional view showing a modified example of the internal configuration and peripheral configuration of the vacuum chamber of the vacuum processing apparatus according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Hereinafter, the embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features are shown for the purpose of explaining the technology, but they are merely examples and are not necessarily all essential features for enabling the embodiments to be implemented.

[0022] The drawings are schematic, and for the sake of convenience, configurations may be omitted or simplified as appropriate. The size and positional relationship of the configurations shown in different drawings are not necessarily described accurately, and may be changed as appropriate. Hatching may be used in drawings such as plan views that are not cross-sectional views to facilitate understanding of the contents of the embodiments.

[0023] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

[0024] Furthermore, in the description in this specification, when a certain component is described as "comprising," "including," or "having," unless otherwise specified, this is not an exclusive expression that excludes the presence of other components.

[0025] In addition, even if ordinal numbers such as "first" or "second" are used in the description of this specification, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not limited to the ordering that may result from these ordinal numbers.

[0026] In addition, in the descriptions in this specification, expressions indicating an equal state, such as "same," "equal," "uniform," or "homogeneous," unless otherwise specified, are intended to include cases indicating a strictly equal state, as well as cases where differences occur within a tolerance or range in which similar functionality is obtained.

[0027] Furthermore, in the descriptions in this specification, terms indicating specific positions or directions, such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back," may be used, but these terms are used for convenience to facilitate understanding of the contents of the embodiments and have no relation to the positions or directions in which they are actually implemented.

[0028] In addition, in the description of the present specification, when "the upper surface of ..." or "the lower surface of ..." is stated, it is intended to include not only the upper surface or lower surface of the target component itself, but also a state in which another component is formed on the upper surface or lower surface of the target component. In other words, for example, when it is stated that "B is provided on the upper surface of A," it does not prevent another component "C" from being interposed between A and B.

[0029] <Embodiment Mode> The processing apparatus according to the present embodiment will be described below. In the following embodiment, a vacuum processing apparatus in which the inside of a chamber is kept under a vacuum or reduced pressure is described as an example of the processing apparatus, but the present invention is also applicable to a processing apparatus in which the inside of a chamber is not kept under a vacuum.

[0030] <Configuration of vacuum processing equipment> Fig. 1 is a perspective view showing a schematic example of the configuration of a vacuum processing apparatus 1 according to the present embodiment. For convenience, a chamber frame supporting a vacuum chamber 12 or wiring actually connected thereto is omitted in Fig. 1. Note that, although a "vacuum" in the present embodiment is preferably a high vacuum (for example, 0.00001 Pa) to prevent deterioration of the characteristics of the substrate W, it also includes a vacuum level below this high vacuum.

[0031] As shown in FIG. 1, the vacuum processing device 1 includes a vacuum chamber 12, an external fixed part 14 such as a stone surface plate, a bellows 16A which is an elastic member formed of, for example, stainless steel and connects the vacuum chamber 12 and the external fixed part 14, an irradiation part 18 which irradiates light into the vacuum chamber 12 through a transparent window (not shown here) made of quartz or the like, a vacuum pump 20 which reduces the pressure inside the vacuum chamber 12 to create a vacuum state, and a control part 22 which controls each of the driving parts of the vacuum processing device 1. In the above, a bellows made of stainless steel or the like is shown as an example of the elastic member, but an elastic member made of a metal other than stainless steel may be adopted, or an elastic member made of a resin or the like may be adopted depending on the required specifications. In addition, the shape of the elastic member does not have to be a bellows shape like the above bellows 16A.

[0032] The vacuum chamber 12 has a space therein for accommodating a substrate W. Here, examples of the substrate W include a semiconductor wafer, a glass substrate for a liquid crystal display device, a substrate for a flat panel display (FPD) such as an organic electroluminescence (EL) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a glass substrate for a photomask, a ceramic substrate, a substrate for a field emission display (i.e., FED), or a substrate for a solar cell. The substrate W is accommodated in the vacuum chamber 12 with a thin film formed on the upper surface, for example.

[0033] An opening 12A is formed on the side of the vacuum chamber 12, through which the substrate W passes when the substrate W is loaded and unloaded. The opening 12A is appropriately closed when the vacuum chamber 12 is in a vacuum state. At least one transparent window (not shown here) is provided on the wall surface (including the top surface, bottom surface, and side surface) of the vacuum chamber 12, through which the inside of the vacuum chamber 12 can be confirmed from outside the vacuum chamber 12 and through which optical processing (e.g., irradiation of laser light) can be performed on an object (e.g., substrate W) in the vacuum chamber 12 from outside the vacuum chamber 12. Other components accommodated inside the vacuum chamber 12 will be described later.

[0034] The irradiation unit 18 irradiates light toward the upper surface of the substrate W accommodated in the vacuum chamber 12. The irradiation unit 18 irradiates, for example, laser light. The irradiation unit 18 may irradiate light such as electron beams depending on the purpose of processing. The irradiation unit 18 irradiates light from an irradiation port 18A provided opposite the transparent window to the upper surface of the substrate W accommodated in the vacuum chamber 12 through the transparent window. The light scans the upper surface of the substrate W by moving the substrate W in the vacuum chamber 12 relative to the irradiation port 18A or by controlling the optical system in the irradiation unit 18. The irradiation unit 18 is mostly disposed on the upper surface of a stand 24 fixed to the external fixed unit 14, and the irradiation port 18A is disposed protruding from the stand 24.

[0035] Outside the vacuum chamber 12, at a position adjacent to the irradiation port 18A of the irradiation unit 18 in the X-axis direction, the plasma generating unit 62 and the exhaust unit 64 are provided to sandwich the irradiation port 18A. More specifically, at a position adjacent to the irradiation port 18A of the irradiation unit 18 in the X-axis direction, the inlet 62A of the plasma generating unit 62 and the exhaust port 64A of the exhaust unit 64 are provided to sandwich the irradiation port 18A. Note that the irradiation unit 18, the plasma generating unit 62, and the exhaust unit 64 do not have to be adjacent to each other.

[0036] The plasma generating unit 62 outside the vacuum chamber 12 has an inductively coupled or capacitively coupled plasma generating mechanism using a coil or the like, and introduces a gas containing active species by the generated plasma into the vacuum chamber 12 through an inlet 62A, which is an opening formed in the wall of the vacuum chamber 12.

[0037] An exhaust unit 64 outside the vacuum chamber 12 exhausts gas from within the vacuum chamber 12 through an exhaust port 64A, which is an opening formed in the wall surface of the vacuum chamber 12, thereby reducing the pressure inside the vacuum chamber 12. The exhaust unit 64 may also serve as the vacuum pump 20.

[0038] The positions of the plasma generating unit 62 and the exhaust unit 64 may be reversed in the X-axis direction (i.e., the exhaust port 64A of the exhaust unit 64 is located on the X-axis positive side of the irradiation port 18A, and the inlet 62A of the plasma generating unit 62 is located on the X-axis negative side of the irradiation port 18A), or the exhaust port 64A of the exhaust unit 64 and the inlet 62A of the plasma generating unit 62 may be located at positions sandwiching the irradiation port 18A in a direction different from the X-axis direction along the main surface of the transparent window (for example, the Y-axis direction in FIG. 1). In addition, the plasma generating unit 62 and the exhaust unit 64 may be located on the upper surface of the vacuum chamber 12, or may be located on the floor surface via a pipe or the like. Here, the positive X-axis direction indicates the direction indicated by the X-axis arrow, and the negative X-axis direction indicates the opposite direction to the direction indicated by the X-axis arrow.

[0039] The control unit 22 may include a storage device including a memory (storage medium) including, for example, a hard disk drive (HDD), a random access memory (RAM), a read only memory (ROM), a flash memory, a volatile or non-volatile semiconductor memory, a magnetic disk, a flexible disk, an optical disk, a compact disk, a mini disk, or a DVD, a processing circuit such as a central processing unit (CPU) that executes a program stored in the storage device, an external CD-ROM, an external DVD-ROM, or an external flash memory, an input device capable of inputting information such as a mouse, a keyboard, a touch panel, or various switches, and an output device capable of outputting information such as a display, a liquid crystal display device, or a lamp.

[0040] The control unit 22 controls the output of the light source and the irradiation area in the irradiation unit 18, controls the applied voltage in the plasma generation unit 62, or controls the output of the vacuum pump 20 and the exhaust unit 64, and further controls the drive of each of the drive units described below (for example, the drive unit of the linear motor mechanism or the drive unit of the lift pin mechanism).

[0041] 2 is a cross-sectional view showing an example of the internal configuration and peripheral configuration of the vacuum chamber 12 of the vacuum processing apparatus 1 according to the present embodiment. As shown in the example in FIG. 2, inside the vacuum chamber 12, there are provided a stage 42 on whose upper surface the substrate W is placed, a slider 44 movable in the Y-axis direction and supporting the stage 42 from below, a base 46 fixed to the external fixed part 14 independent of the vacuum chamber 12, a linear guide 48 fixed to the base 46 and extending in the Y-axis direction, a linear motor mechanism 50 for moving the slider 44 along the linear guide 48 in the Y-axis direction, and a lift pin mechanism 52 having lift pins 52A that penetrate through holes (not shown here) formed in the stage 42 and support the substrate W.

[0042] A transparent window 72 is formed on the upper surface of the vacuum chamber 12, and the plasma generating unit 62 and the exhaust unit 64 are provided at positions sandwiching the transparent window 72 in a plan view of the transparent window 72. Note that the case where "the plasma generating unit 62 and the exhaust unit 64 sandwich the transparent window 72 in a plan view of the transparent window 72" is not limited to the case where the transparent window 72, the plasma generating unit 62, and the exhaust unit 64 are all provided on the same wall surface of the vacuum chamber 12 (the upper surface of the vacuum chamber 12 in FIG. 2) as shown in FIG. 2 as an example, but also includes the case where, for example, only the exhaust unit 64 among the above is provided on a different wall surface of the vacuum chamber 12 (for example, a side surface) or the case where only the plasma generating unit 62 among the above is provided on a different wall surface of the vacuum chamber 12 (for example, a bottom surface).

[0043] The stage 42 holds the substrate W approximately horizontally with the processing surface of the substrate W facing upward. A slider 44 supporting the stage 42 is moved in the Y-axis direction by a linear motor mechanism 50, and the light irradiated from the irradiation port 18A is scanned in the X-axis direction, so that the entire surface of the processing region of the substrate W can be scanned by the light in a plan view. The lift pin mechanism 52 is fixed to a base 46.

[0044] The linear motor mechanism 50 is fixed to the external fixed part 14 located on the side of the vacuum chamber 12 through an opening 12B formed on the side of the vacuum chamber 12. Specifically, the linear motor mechanism 50 is fixed to an end of a hollow columnar member 14A passing through a bellows 16A welded to the opening 12B. At this time, wiring and the like connected to the linear motor mechanism 50 are led out of the vacuum chamber 12 through the inside of the columnar member 14A. The columnar member 14A included in the external fixed part 14 is fixed to an external member 14B included in the external fixed part 14. The columnar member 14A does not come into contact with the bellows 16A connected to the side of the vacuum chamber 12.

[0045] The base 46 is fixed to the external fixed part 14 located below the vacuum chamber 12 through an opening 12C formed in the bottom surface of the vacuum chamber 12. Specifically, the base 46 is fixed to an end of a columnar member 14C passing through a bellows 16B welded to the opening 12C. The columnar member 14C included in the external fixed part 14 is fixed to an external member 14B included in the external fixed part 14. The columnar member 14C does not contact the bellows 16B connected to the bottom surface of the vacuum chamber 12.

[0046] 2, the external fixed parts 14 are disposed across the sides and below the vacuum chamber 12, but it is not essential that the external fixed parts 14 are continuous at these positions, and they may be provided dispersedly at these positions, or may be provided only at one of the positions. The vacuum chamber 12 is supported and fixed from below in the vertical direction by a chamber frame (not shown) separate from the bellows 16B, but the chamber frame is provided independently of the external fixed parts 14.

[0047] The transparent window 72 is a transparent plate fitted into an opening 12D formed in a wall surface (the upper surface in FIG. 2) of the vacuum chamber 12. The transparent window 72 is made of, for example, quartz. The transparent window 72 may be provided in other wall surfaces (including the upper surface, bottom surface, and side surfaces) of the vacuum chamber 12. Furthermore, a plurality of transparent windows 72 may be provided in the wall surface of the vacuum chamber 12.

[0048] The inlet 62A of the plasma generating unit 62 is formed on the positive side of the X-axis with respect to the transparent window 72. By making the inlet 62A of the plasma generating unit 62 openable and closable, the inlet 62A can be closed during processes other than the process of cleaning the transparent window 72 (for example, a process in which the substrate W is irradiated with light that has linearity and high energy density in the vacuum chamber 12, thereby generating plasma and releasing constituent materials on the surface of the substrate, or a process of forming a film on the upper surface of the substrate W, etc.), thereby narrowing the area requiring reduced pressure for the above processes.

[0049] The exhaust port 64A of the exhaust unit 64 is formed on the negative side of the X-axis with respect to the transparent window 72. The exhaust unit 64 may also serve as an exhaust unit for exhausting the entire interior of the vacuum chamber 12, or may be configured to exhaust air during a cleaning step of the transparent window 72, provided separately from an exhaust unit (not shown) for exhausting the entire interior of the vacuum chamber 12. By making the exhaust port 64A openable and closable, the exhaust unit 64 can close the exhaust port 64A during steps other than the cleaning step of the transparent window 72 (for example, a step of performing laser ablation on the substrate W in the vacuum chamber 12, or a step of forming a film on the upper surface of the substrate W, etc.), thereby narrowing the area requiring decompression for the above-mentioned processing.

[0050] Fig. 3 is an enlarged cross-sectional view showing the peripheral portion of the transparent window 72 in Fig. 2. As shown in Fig. 3, the transparent window 72 is located between the inlet 62A of the plasma generating part 62 and the exhaust outlet 64A of the exhaust part 64 in the X-axis direction.

[0051] In the process of cleaning the transparent window 72, plasma is generated by the plasma generating unit 62, and further, gas 162A containing active species generated by the plasma is introduced into the vacuum chamber 12 via the inlet 62A. Meanwhile, gas 162B containing active species introduced in this manner into the vacuum chamber 12 near the inlet 62A flows toward the exhaust port 64A according to the flow of gas in the vacuum chamber 12 exhausted by the exhaust unit 64 (arrow 164 in FIG. 3).

[0052] At this time, the path through which the gas 162B flows, that is, the path connecting the inlet 62A and the exhaust port 64A, passes through the transparent window 72 in a plan view of the transparent window 72. Therefore, the gas 162B flowing in the vacuum chamber 12 is more likely to flow through the vicinity of the transparent window 72. When the gas 162B passes through the vicinity of the transparent window 72, the active species contained in the gas 162B acts on organic matter adhering to the transparent window 72 to remove (for example, decompose) it. The active species includes ions having a charge, or radicals that are electrically neutral. The gas used includes argon, oxygen, fluorine, etc., but for example, when the gas contains oxygen, oxygen radicals, which are a type of active species, are generated by the action of the plasma in the plasma generating unit 62.

[0053] In addition, in the process of cleaning the transparent window 72, it is desirable that the exhaust unit 64 continuously exhausts the gas inside the vacuum chamber 12. On the other hand, in the process of cleaning the transparent window 72, it is desirable that the plasma generating unit 62 intermittently generates plasma.

[0054] Fig. 4 is a cross-sectional view showing a modified example of the internal configuration and peripheral configuration of vacuum chamber 120 of the vacuum processing apparatus according to the present embodiment. As shown in Fig. 4, a stage 42, a slider 44, a base 46, a linear guide 48, a linear motor mechanism 50, and a lift pin mechanism 52 are provided inside vacuum chamber 120. In addition, a plurality of transparent windows 72B, 72C, and 72D are formed on the upper surface of vacuum chamber 120, and a plasma generating unit 62 and an exhaust unit 64 are provided at positions sandwiching these transparent windows in a plan view.

[0055] The transparent windows 72B, 72C, and 72D are transparent plates fitted into openings formed in a wall surface (upper surface in FIG. 4) of the vacuum chamber 120. The transparent windows 72B, 72C, and 72D are made of, for example, quartz. Of the three transparent windows, the transparent window 72B is located furthest in the positive direction of the X-axis, and the transparent window 72D is located furthest in the negative direction of the X-axis. In FIG. 4, the transparent windows 72B, 72C, and 72D are formed side by side in the X-axis direction.

[0056] The irradiation port 18B, the irradiation port 18C, and the irradiation port 18D provided in the irradiation unit are arranged corresponding to the transparent window 72B, the transparent window 72C, and the transparent window 72D, respectively. That is, the irradiation port 18B is arranged opposite the transparent window 72B, and the light irradiated from the irradiation port 18B passes through the transparent window 72B and reaches the upper surface of the substrate W accommodated in the vacuum chamber 120. Similarly, the irradiation port 18C is arranged opposite the transparent window 72C, and the light irradiated from the irradiation port 18C passes through the transparent window 72C and reaches the inside of the vacuum chamber 120. Similarly, the irradiation port 18D is arranged opposite the transparent window 72D, and the light irradiated from the irradiation port 18D passes through the transparent window 72D and reaches the inside of the vacuum chamber 120.

[0057] The inlet 62A of the plasma generating unit 62 is formed on the positive side of the X-axis with respect to the transparent window 72B. The exhaust port 64A of the exhaust unit 64 is formed on the negative side of the X-axis with respect to the transparent window 72D. That is, the inlet 62A and the exhaust port 64A are disposed on either side of the transparent windows 72B, 72C, and 72D, which are aligned in the direction connecting the inlet 62A and the exhaust port 64A (the X-axis direction in FIG. 4).

[0058] Fig. 5 is a plan view showing a configuration of the periphery of the multiple transparent windows in Fig. 4. As shown in Fig. 5, the transparent windows 72B, 72C, and 72D are formed aligned in the X-axis direction on the upper surface of the vacuum chamber 120. The inlet 62A and the exhaust outlet 64A are disposed on either side of the transparent windows 72B, 72C, and 72D aligned in the direction connecting the inlet 62A and the exhaust outlet 64A (the X-axis direction in Fig. 5).

[0059] Plasma is generated by the plasma generating unit 62, and gas containing active species generated by the plasma is introduced into the vacuum chamber 120 through the inlet 62A. Meanwhile, the gas 162C containing active species thus introduced into the vacuum chamber 120 near the inlet 62A flows toward the exhaust port 64A in accordance with the flow of gas in the vacuum chamber 120 exhausted by the exhaust unit 64 (arrow 164C in FIG. 5).

[0060] At this time, the path through which the gas 162C flows, i.e., the path connecting the inlet 62A and the exhaust outlet 64A, passes through the transparent windows 72B, 72C, and 72D in this order in a plan view of the upper surface of the vacuum chamber 120. Therefore, the gas 162C flowing inside the vacuum chamber 120 is more likely to flow by passing through the vicinity of the transparent windows 72B, 72C, and 72D in this order.

[0061] 5, a plurality of transparent windows 72B, 72C, and 72D can be cleaned collectively by a gas 162C containing active species introduced from a single inlet 62A. Thus, a large number of transparent windows can be efficiently cleaned with a small number of plasma sources.

[0062] Fig. 6 is a plan view showing a modified example of the configuration of the peripheral parts of the multiple transparent windows. As shown in Fig. 6, the transparent windows 72B, 72C, and 72D are formed in line in the X-axis direction on the upper surface of the vacuum chamber 220. The inlet 262A of the plasma generating part 262 and the exhaust port 264A of the exhaust part 264 are arranged on either side of the transparent windows 72B, 72C, and 72D, which are arranged in a direction intersecting (the X-axis direction, which is a direction perpendicular to) the direction connecting the inlet 262A and the exhaust port 264A (the Y-axis direction in Fig. 6).

[0063] Here, the inlet 262A and the exhaust port 264A are both openings formed to extend in the X-axis direction. It is desirable that the formation width of the inlet 262A and the exhaust port 264A in the X-axis direction extends from the end of the transparent window 72B on the positive side of the X-axis to the end of the transparent window 72D on the negative side of the X-axis. Also, the inlet 262A may be supplied with gas containing active species from a plurality of plasma generating units. Also, the inlet 262A may be a collection of openings in which inlets corresponding to a plurality of plasma generating units are arranged along the X-axis direction.

[0064] Plasma is generated by the plasma generating unit 262, and gas containing active species generated by the plasma is introduced into the vacuum chamber 220 via the inlet 262A. Meanwhile, the gas 162D containing active species thus introduced into the vacuum chamber 220 near the inlet 262A flows toward the exhaust port 264A according to the flow of gas in the vacuum chamber 220 exhausted by the exhaust unit 264 (arrow 164D in FIG. 6).

[0065] At this time, the path through which the gas 162D flows, i.e., the path connecting the inlet 262A and the exhaust outlet 264A, passes through the transparent windows 72B, 72C, and 72D almost simultaneously in a plan view of the upper surface of the vacuum chamber 220. Therefore, the gas 162D flowing inside the vacuum chamber 220 tends to flow through the vicinity of the transparent windows 72B, 72C, and 72D almost simultaneously.

[0066] As shown in FIG. 6, the plurality of transparent windows 72B, 72C, and 72D can be cleaned together in a short time by the gas 162D containing active species introduced at the same time from the inlet 262A, which is an opening formed extending in the X-axis direction (or a collection of a plurality of openings arranged in the X-axis direction). Therefore, even if the time until the radicals contained in the gas 162D are deactivated is short, the plurality of transparent windows can be efficiently cleaned within the time until the radicals are deactivated. In addition, since cleaning can be performed using the gas 162D introduced at the same time from the inlet 262A, the difference in time until the radicals are deactivated between the plurality of transparent windows can be reduced. Therefore, the plurality of transparent windows 72B, 72C, and 72D can be cleaned evenly.

[0067] Fig. 7 is a cross-sectional view showing a modified example of the configuration of the periphery of the transparent window 72. As shown in the example in Fig. 7, inside the vacuum chamber 320, above the stage 42, a partition 92 for partitioning the space within the vacuum chamber 320 is provided.

[0068] The partition 92 includes a fixed portion 92A extending from and fixed to the wall surface of the vacuum chamber 320, and a sliding portion 92B that is slidable relative to the fixed portion 92A. The fixed portion 92A is disposed above the stage 42 (the Z-axis positive direction side in FIG. 7). The sliding portion 92B can partition a part of the vacuum chamber 320 to form a closed space by sliding to close an opening 92C formed in the fixed portion 92A. Note that the partition 92 is not limited to being located above the stage 42 as long as it can partition a part of the vacuum chamber 320 to form a closed space. In addition, the closed space formed by closing the opening 92C with the sliding portion 92B does not need to be a strictly closed space, and it is sufficient that the gas 162B including the active species is prevented from flowing out to the outside of the closed space to a certain extent.

[0069] When optical processing (e.g., irradiation of laser light) is performed from outside the vacuum chamber 320 through the transparent window 72, the partition 92 slides the slide portion 92B from the opening 92C, thereby enabling optical processing of the substrate placed on the upper surface of the stage 42. On the other hand, in the cleaning process of the transparent window 72, the partition 92 slides the slide portion 92B to close the opening 92C, thereby partitioning the space within the vacuum chamber 320 to form a closed space.

[0070] The closed space is provided with an inlet 62A, an exhaust port 64A, and a transparent window 72 facing the closed space. However, the inlet 62A, the exhaust port 64A, and the transparent window 72 are not limited to being provided at the boundary of the closed space as shown in Fig. 7, and may be located, for example, inside the boundary of the closed space. Therefore, the gas 162B containing active species introduced near the inlet 62A in the vacuum chamber 320 flows toward the exhaust port 64A according to the gas flow in the closed space (arrow 164 in Fig. 7).

[0071] At this time, the gas 162B is prevented from flowing out of the closed space by the partition 92, so that the gas 162B is more likely to flow through the vicinity of the transparent window 72.

[0072] Although FIG. 7 shows a case where one transparent window 72 is provided, a plurality of transparent windows 72 may be provided.

[0073] Fig. 8 is a cross-sectional view showing a modified example of the internal configuration and peripheral configuration of a vacuum chamber 420 of a vacuum processing apparatus according to this embodiment. As shown in Fig. 8, a stage 42, a slider 44, a base 46, a linear guide 48, a linear motor mechanism 50, and a lift pin mechanism 52 are provided inside the vacuum chamber 420. A transparent window 72 is formed on the upper surface of the vacuum chamber 420, and a plasma generating unit 63 and an exhaust unit 64 are provided at positions sandwiching the transparent window 72 in a plan view.

[0074] The plasma generating unit 63 is provided with a portion thereof inserted into the vacuum chamber 420. The plasma generating unit 63 includes an AC power supply 63A, a conductive member 63B which is a hollow conductive member through which a high-frequency current applied by the AC power supply 63A flows, and a cylindrical insulating member 63C which encases the conductive member 63B.

[0075] Rod-shaped conductive member 63B is inserted into vacuum chamber 420 from outside vacuum chamber 420 with both ends protruding outside vacuum chamber 420, and both ends protruding outside vacuum chamber 420 are connected to AC power source 63A. Conductive member 63B is made of, for example, copper or nickel.

[0076] A cooling medium such as cooling water can be circulated inside the hollow conductive member 63B. The cooling medium filled in the conductive member 63B flows inside the conductive member 63B, thereby cooling the heat generated in the conductive member 63B due to the flow of the high-frequency current.

[0077] The cylindrical insulating member 63C is provided to enclose the conductive member 63B in the vacuum chamber 420. By providing the insulating member 63C, low-temperature plasma can be generated in the vacuum chamber 420.

[0078] The conductive member 63B of the plasma generating unit 63 and the insulating member 63C that encases the conductive member 63B are provided on the X-axis positive side with respect to the transparent window 72. When the AC power supply 63A of the plasma generating unit 63 is turned on, a high-frequency current flows through the conductive member 63B, and plasma is generated along the insulating member 63C that encases the conductive member 63B. Then, the plasma generated along the insulating member 63C that encases the conductive member 63B introduces a gas containing active species into the vacuum chamber 420. That is, in the plasma generating unit 63, the conductive member 63B and the insulating member 63C function as an inlet that introduces a gas containing active species into the vacuum chamber 420.

[0079] In addition, by controlling the switching between the on state (a state in which a voltage is applied periodically) and the off state (a state in which no voltage is applied) of the AC power supply 63A to apply a voltage intermittently (by appropriately controlling the ratio of the on state), it is possible to control the intensity of the plasma generated and the amount of heat generated by the plasma generation.

[0080] Furthermore, the direction in which the conductive member 63B extends within the vacuum chamber 420 is not limited to the X-axis direction as shown in FIG.

[0081] Furthermore, the plasma generating unit provided in the vacuum chamber 420 as described above may have a configuration different from that of the plasma generating unit 63, and may be, for example, a plasma generating unit having an inductively coupled plasma generating mechanism or a capacitively coupled plasma generating mechanism.

[0082] <Effects of the above-described embodiment> Next, examples of effects produced by the above-described embodiments are shown. In the following description, the effects are described based on the specific configurations shown as examples in the above-described embodiments, but they may be replaced with other specific configurations shown as examples in the present specification as long as the same effects are produced. In other words, for convenience, only one of the corresponding specific configurations may be described as a representative below, but the representatively described specific configuration may be replaced with another corresponding specific configuration.

[0083] According to the embodiment described above, the processing apparatus includes a chamber, a plasma generating unit 62 (or a plasma generating unit 63 or a plasma generating unit 262), and an exhaust unit 64 (or an exhaust unit 264). Here, the chamber corresponds to at least one of the vacuum chamber 12, the vacuum chamber 120, the vacuum chamber 220, the vacuum chamber 320, and the vacuum chamber 420, for example. The vacuum chamber 12 has at least one transparent window 72 (or a transparent window 72B, a transparent window 72C, or a transparent window 72D). The plasma generating unit 62 generates plasma. The plasma generating unit 62 also introduces a gas 162B (or a gas 162C or a gas 162D) containing activated species due to plasma into the vacuum chamber 12. The exhaust unit 64 exhausts the gas 162B from the vacuum chamber 12. The plasma generating unit 62 and the exhaust unit 64 are disposed at positions sandwiching the transparent window 72 in a plan view of the transparent window 72.

[0084] According to such a configuration, the plasma generating unit 62 and the exhaust unit 64 are disposed at positions sandwiching the transparent window 72, so that the gas 162B containing activated species generated by the plasma passes through the transparent window 72 and is easily exhausted from the exhaust unit 64. This makes it easier for the activated species in the gas 162B to reach the transparent window 72, so that the transparent window 72 can be effectively cleaned.

[0085] Furthermore, the same effect can be achieved even if other configurations, examples of which are shown in this specification, are appropriately added to the above configuration, i.e., even if other configurations in this specification that were not mentioned as the above configuration are appropriately added.

[0086] Moreover, according to the embodiment described above, both the plasma generating unit 62 and the exhaust unit 64 are disposed adjacent to the transparent window 72. With such a configuration, the gas 162B containing active species generated by the plasma is directly supplied to the adjacent transparent window 72, so that the active species in the gas 162B can easily reach the transparent window 72 while maintaining their activity. Furthermore, the exhaust unit 64 adjacent to the transparent window 72 effectively exhausts the gas 162B containing active species in the vicinity of the transparent window 72, so that the gas 162B containing active species is less likely to take a path other than the path via the transparent window 72. As a result, the cleaning effect of the transparent window 72 is improved.

[0087] Furthermore, according to the embodiment described above, the plasma generating unit 62 (or the plasma generating unit 262) is provided outside the vacuum chamber 12 (or the vacuum chamber 120, the vacuum chamber 220, or the vacuum chamber 320). With this configuration, even if the plasma generating unit 62 that generates heat by generating plasma is used, it is possible to suppress a temperature rise inside the vacuum chamber 12.

[0088] According to the embodiment described above, the plasma generating unit 63 is provided in the vacuum chamber 420. The plasma generating unit 63 includes a rod-shaped hollow conductive member 63B and a cylindrical insulating member 63C that encases the conductive member 63B. A cooling medium is filled in the conductive member 63B. According to this configuration, even if the plasma generating unit 63 that generates heat by generating plasma is provided in the vacuum chamber 420, the heat that may be generated from the conductive member 63B can be reduced by the cooling medium filled in the conductive member 63B, and the temperature rise in the vacuum chamber 420 can be suppressed. Therefore, it is not necessary to use components in the vacuum chamber 420 that are highly heat resistant, it is not necessary to separately provide a mechanism for cooling the inside of the vacuum chamber 420, and it is not necessary to wait until the inside of the vacuum chamber 420 is cooled in order to perform the next processing step in the vacuum chamber 420.

[0089] Moreover, according to the embodiment described above, a voltage is applied intermittently to the conductive member 63B. With this configuration, even if the plasma generating unit 63 that generates heat by generating plasma is provided in the vacuum chamber 420, the heat that may be generated from the conductive member 63B can be adjusted by controlling the voltage drive, and the temperature rise in the vacuum chamber 420 can be suppressed. Therefore, it is not necessary to use components in the vacuum chamber 420 that are highly heat resistant, it is not necessary to separately provide a mechanism for cooling the inside of the vacuum chamber 420, and it is not necessary to wait until the inside of the vacuum chamber 420 is cooled in order to perform the next processing step in the vacuum chamber 420.

[0090] According to the embodiment described above, the processing apparatus is provided in the vacuum chamber 320 and includes a partition unit 92 for partitioning the space in the vacuum chamber 320 to form a closed space. The closed space faces the inlet 62A of the plasma generating unit 62 for introducing the gas 162B into the vacuum chamber 320, the exhaust port 64A of the exhaust unit 64 for exhausting the gas 162B in the vacuum chamber 320 to the outside of the vacuum chamber 320, and the transparent window 72. According to this configuration, the gas 162B including the active species introduced from the inlet 62A can be efficiently kept in the vicinity of the transparent window 72, thereby improving the cleaning effect of the transparent window 72.

[0091] Moreover, according to the embodiment described above, the active species includes oxygen radicals. With such a configuration, the active species includes oxygen radicals that take a relatively long time to be deactivated, and therefore the active species can be supplied to the vicinity of the transparent window 72 while still maintaining its activity. This improves the cleaning effect of the transparent window 72.

[0092] According to the embodiment described above, the inside of the vacuum chamber 12 is under a vacuum or reduced pressure atmosphere. With such a configuration, it takes a longer time for radicals in the gas containing active species to be deactivated, so that these active species can be supplied to the vicinity of the transparent window 72 while still maintaining their activity. This improves the cleaning effect of the transparent window 72.

[0093] According to the embodiment described above, a plurality of transparent windows are provided. The plasma generating unit 62 (or the plasma generating unit 262) and the exhaust unit 64 (or the exhaust unit 264) are disposed with a plurality of transparent windows 72B, 72C, and 72D therebetween. According to this configuration, the plurality of transparent windows 72B, 72C, and 72D can be cleaned collectively.

[0094] Furthermore, according to the embodiment described above, the plasma generating unit 62 (or the plasma generating unit 63) and the exhaust unit 64 are arranged with a plurality of transparent windows 72B, 72C, and 72D arranged in a direction connecting the plasma generating unit 62 (or the plasma generating unit 63) and the exhaust unit 64 in between. With this configuration, the plurality of transparent windows 72B, 72C, and 72D can be cleaned collectively by the gas 162C containing active species introduced from a single inlet 62A. Therefore, many transparent windows can be efficiently cleaned with a small number of plasma sources.

[0095] According to the embodiment described above, the plasma generating unit 262 and the exhaust unit 264 are arranged with a plurality of transparent windows 72B, 72C, and 72D arranged in a direction intersecting the direction connecting the plasma generating unit 262 and the exhaust unit 264 between them. According to such a configuration, the plurality of transparent windows 72B, 72C, and 72D can be cleaned together in a short time by the gas 162D containing active species introduced at the same time from the inlet 262A, which is an opening (or a set of a plurality of openings arranged in the X-axis direction) formed extending in the X-axis direction. Therefore, even if the time until the radicals contained in the gas 162D are deactivated is short, the plurality of transparent windows can be efficiently cleaned within the time until the radicals are deactivated. Moreover, since cleaning can be performed using the gas 162D introduced at the same time from the inlet 262A, the difference in time until the radicals are deactivated between the plurality of transparent windows can be reduced. Therefore, the plurality of transparent windows 72B, 72C, and 72D can be cleaned evenly.

[0096] Moreover, according to the embodiment described above, the processing apparatus includes the irradiation unit 18 that irradiates light into the vacuum chamber 12 through the transparent window 72. With such a configuration, the transparent window 72 to be cleaned is an irradiation window used when irradiating the processing target (substrate W) in the vacuum chamber 12 with laser light from outside the vacuum chamber 12, so it is particularly useful to maintain a high degree of cleanliness in order to reduce effects on the intensity or direction of the laser light used for processing.

[0097] <Modifications of the above-described embodiments> In the embodiments described above, the material, composition, dimensions, shape, relative positional relationship, or implementation conditions of each component may be described, but these are merely examples in all respects and are not limiting.

[0098] Thus, numerous variations and equivalents not shown are contemplated within the scope of the technology disclosed herein, including, for example, modifying, adding, or omitting at least one component.

[0099] In addition, in the embodiments described above, when a material name is mentioned without being specifically specified, it is understood that the material may contain other additives, such as an alloy, unless a contradiction arises. [Explanation of symbols]

[0100] 1 Vacuum processing equipment 12,120,220,320,420 Vacuum chamber 12A,12B,12C,12D,92C opening 14 External fixing part 14B External parts 14A, 14C Column members 16A, 16B Bellows 18 Irradiation unit 18A,18B,18C,18D Irradiation port 20 Vacuum Pump 22 Control section 24 Mount 42 Stages 44 Slider 46 Base 48 Linear Guide 50 Linear motor mechanism 52 Lift pin mechanism 52A Lift Pin 62, 63, 262 Plasma generating unit 62A, 262A inlet 63A AC power supply 63B Conductive materials 63C Insulating materials 64,264 Exhaust section 64A,264A Exhaust port 72, 72B, 72C, 72D Transparent window 92 Partition 92A Fixed part 92B Slide section 162A, 162B, 162C, 162D Gas 164,164C,164D Arrow

Claims

1. a chamber having at least one transparent window; a plasma generating unit for generating plasma and introducing a gas containing activated species generated by the plasma into the chamber; an exhaust unit for exhausting the gas in the chamber, the plasma generating unit and the exhaust unit are disposed at positions sandwiching the transparent window in a plan view of the transparent window, The plasma generating unit is provided in the chamber, The plasma generating unit includes a rod-shaped hollow conductive member and a cylindrical insulating member that encases the conductive member, A cooling medium is filled in the conductive member, A voltage is applied to the conductive member intermittently. Processing unit.

2. The processing device according to claim 1 , The plasma generating unit and the exhaust unit are both disposed adjacent to the transparent window. Processing unit.

3. The processing device according to claim 1 or 2, Further comprising a partition portion provided in the chamber and partitioning a space in the chamber to form a closed space, The closed space includes an inlet of the plasma generating unit through which the gas is introduced into the chamber, an exhaust port of the exhaust unit through which the gas in the chamber is exhausted to the outside of the chamber, and a transparent window facing the inlet of the plasma generating unit. Processing unit.

4. A processing device according to any one of claims 1 to 3, The active species includes oxygen radicals. Processing unit.

5. A processing device according to any one of claims 1 to 4, The inside of the chamber is under a vacuum or reduced pressure atmosphere. Processing unit.

6. A processing device according to any one of claims 1 to 5, A plurality of the transparent windows are provided, The plasma generating unit and the exhaust unit are disposed with a plurality of the transparent windows therebetween. Processing unit.

7. The processing device according to claim 6, The plasma generating unit and the exhaust unit are arranged with a plurality of transparent windows arranged in a direction connecting the plasma generating unit and the exhaust unit therebetween. Processing unit.

8. The processing device according to claim 6, The plasma generating unit and the exhaust unit are arranged with a plurality of transparent windows arranged in a direction intersecting a direction connecting the plasma generating unit and the exhaust unit. Processing unit.

9. A processing device according to any one of claims 1 to 8, Further comprising an irradiation unit that irradiates light into the chamber through the transparent window. Processing unit.

Images