Substrate cleaning apparatus, substrate processing apparatus, break-in apparatus, method for estimating number of particles adhering to substrate, method for determining contamination level of substrate cleaning member, and method for determining break-in processing

Abstract

To provide a substrate cleaning device monitoring a contamination degree of a cleaning member, a substrate processing device and a method for determining a contamination degree of a substrate cleaning member, and to provide a substrate cleaning device capable of estimating the number of particles attached to a substrate, a substrate processing device and a method for estimating the number of particles attached to a substrate.SOLUTION: A substrate cleaning device is provided, comprising: a substrate holding portion holding a substrate; a substrate cleaning member coming in slidable contact with the held substrate to clean the substrate by using first cleaning fluid supplied from a first nozzle; a self-cleaning member coming in slidable contact with the substrate cleaning member at a retreat position separate from the substrate holding portion to perform self-cleaning of the substrate cleaning member by using second cleaning fluid supplied from a second nozzle; measurement means measuring a physical property value of drainage of the second cleaning fluid used for the self-cleaning of the substrate cleaning member; and control portion estimating the number of particles attached to the cleaned substrate on the basis of the physical property value of the drainage.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a substrate cleaning apparatus, a substrate processing apparatus, a break-in apparatus, a method for estimating the number of particles adhering to a substrate, a method for determining the contamination level of a substrate cleaning member, and a method for determining break-in processing. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus that sequentially performs polishing, cleaning, and drying processes on a substrate. In the polishing process, the front surface of the substrate is polished using a suspension (slurry) containing abrasive grains and a polishing aid. In the subsequent cleaning process, the slurry that has adhered to the front and back surfaces of the substrate by the polishing process is removed using a cleaning member. In the subsequent drying process, liquid droplets that have adhered to the front and back surfaces of the substrate by the cleaning process are removed.

[0003] If the cleaning process is not appropriate, defects may occur in the structure of the element formed on the substrate, which may result in poor characteristics of the element. Therefore, it is necessary to select a cleaning method that can reliably remove the slurry in a short time without destroying or corroding the element. In this context, scrubbing with a cleaning member made of PVA sponge is used in the cleaning process, and various cleaning solutions are used in addition to it as a supplementary role (for example, Patent Document 2).

[0004] In scrubbing, a cleaning member is brought into contact with the substrate. Therefore, the cleanliness of the cleaning member itself affects the cleaning effect. In other words, if the cleaning member itself is clean, the substrate can be properly cleaned. However, if the cleaning member becomes contaminated, while it removes contaminants from the substrate, the contaminants deposited on the cleaning member may re-adhere to the substrate (reverse contamination), which may result in the cleaning effect being lost.

[0005] As one of the means for preventing this reverse contamination, a method called self-cleaning, in which the cleaning member itself is cleaned at regular intervals or after a certain number of processed sheets, is known (for example, Patent Document 3). In addition, a break-in process (conditioning of a new cleaning member before starting to use it) is performed on new cleaning members. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2019-161107 A [Patent Document 2] Patent No. 5866227 [Patent Document 3] Patent No. 3447869 [Patent Document 4] Japanese Patent Application Publication No. 10-163143 [Patent Document 5] Special Publication No. 2020-522126 Summary of the Invention [Problem to be solved by the invention]

[0007] It is an object of the present invention to provide a substrate cleaning apparatus and substrate processing apparatus that monitor the degree of contamination of a cleaning member, and a method for determining the degree of contamination of a substrate cleaning member. It is another object of the present invention to provide a substrate cleaning apparatus and substrate processing apparatus that can estimate the number of particles adhering to a substrate, and a method for estimating the number of particles adhering to a substrate. [Means for solving the problem]

[0008] According to one aspect of the present invention, a substrate holder for holding a substrate; a substrate cleaning member that comes into sliding contact with the held substrate and cleans the substrate using a first cleaning liquid supplied from a first nozzle; a self-cleaning member that is in sliding contact with the substrate cleaning member at a retracted position separated from the substrate holding portion and that self-cleans the substrate cleaning member using a second cleaning liquid supplied from a second nozzle; a measuring means for measuring a physical property value of the second cleaning liquid used in the self-cleaning of the substrate cleaning member; and a control unit that estimates the number of particles adhering to the cleaned substrate based on a physical property value of the waste liquid.

[0009] The physical property values ​​may include one or more of a particle count, a pH value, an electrical conductivity, and a total organic carbon concentration.

[0010] According to one aspect of the present invention, a substrate holder for holding a substrate; a substrate cleaning member that comes into sliding contact with the held substrate and cleans the substrate using a first cleaning liquid supplied from a first nozzle; a self-cleaning member that is in sliding contact with the substrate cleaning member at a retracted position separated from the substrate holding portion and that self-cleans the substrate cleaning member using a second cleaning liquid supplied from a second nozzle; a measuring means for measuring a physical property value of the second cleaning liquid used in the self-cleaning of the substrate cleaning member; a control unit that determines a degree of contamination of the substrate cleaning member based on a physical property value of the waste liquid, An apparatus for cleaning a substrate is provided, wherein the physical property value includes a total organic carbon concentration.

[0011] The control unit may estimate the number of particles adhering to the cleaned substrate based on a physical property value of the waste liquid.

[0012] The control unit may determine operating conditions for self-cleaning based on physical property values ​​of the waste liquid.

[0013] The control unit may determine operating conditions for cleaning the substrate based on a physical property value of the waste liquid.

[0014] The control unit may determine a replacement time for the substrate cleaning member based on a physical property value of the waste liquid.

[0015] The substrate cleaning apparatus includes a first pipe that guides a discharged liquid of the second cleaning liquid used for self-cleaning of the substrate cleaning member to the measuring means; A three-way valve provided in the first pipe; The apparatus may further include a second pipe for supplying flushing water to the measuring means via the three-way valve.

[0016] According to one aspect of the present invention, there is provided a substrate polishing apparatus for polishing a substrate using a suspension; There is provided a substrate processing apparatus including the substrate cleaning apparatus.

[0017] According to one aspect of the present invention, a self-cleaning member that slides against a substrate cleaning member before substrate cleaning and performs a break-in process on the substrate cleaning member using a cleaning liquid supplied from a nozzle; a measuring means for measuring a physical property value of the discharged cleaning liquid used in the break-in process; A control unit that determines whether the break-in process is appropriate based on the physical property values ​​of the waste liquid.

[0018] According to one aspect of the present invention, a substrate is held by a substrate holder, a substrate cleaning member is brought into sliding contact with the held substrate, and the substrate is cleaned using a first cleaning liquid supplied from a first nozzle; a self-cleaning member is brought into sliding contact with the substrate cleaning member at a retracted position separated from the substrate holding portion, and the substrate cleaning member is self-cleaned using a second cleaning liquid supplied from a second nozzle; measuring a physical property value of the second cleaning liquid used in the self-cleaning of the substrate cleaning member; There is provided a method for estimating the number of particles adhering to a substrate, which estimates the number of particles adhering to the cleaned substrate based on the physical property values ​​of the waste liquid.

[0019] According to one aspect of the present invention, a substrate is held by a substrate holder, a substrate cleaning member is brought into sliding contact with the held substrate, and the substrate is cleaned using a first cleaning liquid supplied from a first nozzle; a self-cleaning member is brought into sliding contact with the substrate cleaning member at a retracted position separated from the substrate holding portion, and the substrate cleaning member is self-cleaned using a second cleaning liquid supplied from a second nozzle; measuring a total organic carbon concentration in a wastewater of the second cleaning liquid used in the self-cleaning of the substrate cleaning member; There is provided a method for determining a contamination level of a substrate cleaning member, which determines a contamination level of the substrate cleaning member based on a total organic carbon concentration of the wastewater.

[0020] According to another aspect of the present invention, a self-cleaning member is brought into sliding contact with a substrate cleaning member before substrate cleaning, and a break-in process of the substrate cleaning member is performed using a cleaning liquid supplied from a nozzle; measuring physical properties of the cleaning liquid used in the break-in process; There is provided a method for determining whether or not the break-in process is appropriate based on the physical property values ​​of the waste liquid. Effect of the Invention

[0021] The degree of contamination of the cleaning member can be monitored, and the number of particles adhering to the substrate can be estimated. [Brief description of the drawings]

[0022] [Figure 1] 1 is a plan view showing an overall configuration of a substrate processing apparatus including a substrate cleaning apparatus according to an embodiment; [Diagram 2] FIG. 2 is a perspective view showing the entire first cleaning unit 4. [Diagram 3] 4 is a schematic diagram showing the configuration of a self-cleaning section 45 in the first cleaning unit 4. FIG. [Figure 4] FIG. 13 is a schematic diagram showing the configuration of a self-cleaning waste liquid detection unit 454. [Figure 5A] 13 is a graph showing a schematic output of a physical property value measured by a self-cleaning waste liquid detection unit 454. [Figure 5B] 13 is a graph showing a schematic output of a physical property value measured by a self-cleaning waste liquid detection unit 454. [Figure 6] 4 is a flowchart showing an example of a processing operation by a control unit 11. [Figure 7] 10 is a flowchart showing another example of the processing operation by the control unit 11. [Figure 8] FIG. 2 is a perspective view showing the entire second cleaning unit 5. [Figure 9] 4 is a perspective view showing the configuration of a self-cleaning section 55 in the second cleaning unit 5. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] Hereinafter, an embodiment of the present invention will be specifically described with reference to the drawings.

[0024] 1 is a plan view showing an overall configuration of a substrate processing apparatus including a substrate cleaning apparatus according to an embodiment of the present invention, which processes substrates such as semiconductor substrates and can be used in the manufacturing process of memory elements, logic elements, image sensors such as CMOS or CCD, and flat panel displays.

[0025] The substrate processing apparatus includes a rectangular housing 1 and a load port 2 on which a substrate cassette is placed, the load port 2 being disposed adjacent to the housing 1. The substrate processing apparatus also includes polishing units 3a-3d (substrate polishing apparatuses), a first cleaning unit 4 (substrate cleaning apparatus), a second cleaning unit 5 (substrate cleaning apparatus), and a drying unit 6, which are provided inside the housing 1, and a control unit 11 that controls the operation of each unit and device.

[0026] The housing 1 is divided into an area 1A close to the load port 2 and an area 1B in which the polishing units 3a to 3d, the first cleaning unit 4, the second cleaning unit 5 and the drying unit 6 are provided.

[0027] The polishing units 3a to 3d polish and flatten the main surface of the substrate. The polishing units 3a to 3d polish the main surface of the substrate using a suspension (slurry) containing abrasive grains and a polishing aid. Therefore, the suspension and polishing debris adhere to the front and back surfaces of the substrate after polishing as contaminants.

[0028] The first cleaning unit 4 performs primary cleaning of the polished substrate, and the second cleaning unit 5 performs finish cleaning of the substrate after the primary cleaning. In detail, the first cleaning unit 4 and the second cleaning unit 5 scrub the substrate using a substrate cleaning member while supplying a cleaning liquid to the substrate, thereby removing contaminants that have adhered to the substrate during the polishing process.

[0029] The drying unit 6 dries the substrate after the finish cleaning. In detail, the drying unit 6 removes droplets of the cleaning liquid that have adhered to the substrate during the cleaning process.

[0030] The polishing units 3a to 3d are arranged along the longitudinal direction of the substrate processing apparatus in the housing 1. The first cleaning unit 4, the second cleaning unit 5 and the drying unit 6 are also arranged along the longitudinal direction of the substrate processing apparatus.

[0031] A first substrate transport robot 7 is disposed in an area 1B surrounded by the load port 2, the polishing unit 3a, and the drying unit 6. A substrate transport unit 8 is also disposed extending parallel to the arrangement of the polishing units 3a to 3d. A second substrate transport robot 9 is disposed between the first cleaning unit 4 and the second cleaning unit 5. A third substrate transport robot 10 is also disposed between the second cleaning unit 5 and the drying unit 6.

[0032] The first substrate transport robot 7 receives the unpolished substrate from the load port 2 and passes it to the substrate transport unit 8 , and further receives the dried substrate from the drying unit 6 and returns it to the load port 2 .

[0033] The substrate transport unit 8 transports the substrate received from the first substrate transport robot 7, and delivers the substrate to and from the polishing units 3a to 3d. That is, the polishing transport unit 8 receives the polished substrate from the polishing units 3a to 3d.

[0034] The second substrate transport robot 9 receives the polished substrate from the substrate transport unit 8 and passes it to the first cleaning unit 4 , and receives the primarily cleaned substrate from the first cleaning unit 4 and passes it to the second cleaning unit 5 .

[0035] The third substrate transport robot 10 receives the substrate after the finish cleaning from the second cleaning unit 5 and transfers it to the drying unit 6 .

[0036] 2 is a perspective view showing the entire first cleaning unit 4. The first cleaning unit 4 has a spin chuck 41 (substrate holding unit), a cleaning roller 42, a cleaning liquid nozzle 43, a support column 44, and a self-cleaning unit 45.

[0037] The spin chuck 41 horizontally holds and rotates the substrate W with its main surface facing upward (upper surface). In detail, the spin chuck 41 has a fixed spindle 41a and a top 41b rotatably disposed on the spindle 41a and holding the outer periphery of the substrate W. The rotational force of the top 41b is transmitted to the outer periphery of the substrate W, causing the substrate W to rotate within a horizontal plane.

[0038] The cleaning roller 42 is cylindrical and rotates around an axis parallel to the surface of the substrate W. A roll-shaped cleaning member 42a (substrate cleaning member) is wound around the cleaning roller 42. The cleaning member 42a is made of a material such as PVA sponge. Other possible materials for the cleaning member 42a include polyurethane sponge and silicone rubber sponge, but a highly hydrophilic resin is preferable. Although FIG. 2 shows one cleaning roller 42 that contacts the upper surface of the substrate W, the first cleaning unit 4 may further include an additional cleaning roller that contacts the lower surface of the substrate W.

[0039] The cleaning liquid nozzle 43 supplies a cleaning liquid to the upper surface of the substrate W held by the spin chuck 41. The cleaning liquid is, for example, a chemical liquid or pure water. Although FIG. 2 shows one cleaning liquid nozzle 43 that supplies cleaning liquid to the upper surface of the substrate W, the first cleaning unit 4 may further include an additional cleaning liquid nozzle that supplies cleaning liquid to the lower surface of the substrate W. Also, there may be two or more cleaning liquid nozzles 43 that supply cleaning liquid to the upper surface. In that case, one can be used for the chemical liquid and the other for the pure water.

[0040] The support pillars 44 support the cleaning roller 42 and move the cleaning roller 42 in the X direction (a direction perpendicular to the longitudinal direction of the cleaning roller 42) and the Z direction (vertical direction) in the figure. As the support pillars 44 move in the X direction, the cleaning roller 42 moves between a position where the spin chuck 41 is provided (cleaning position) and a position where the self-cleaning unit 45 is provided (retracted position). Furthermore, as the support pillars 44 move in the Z direction at the cleaning position, the cleaning roller 42 comes into contact with and separates from the substrate W. Furthermore, as the support pillars 44 move in the Z direction at the retracted position, the cleaning roller 42 comes into contact with and separates from a quartz plate 451 (described later) of the self-cleaning unit 45.

[0041] The self-cleaning unit 45 self-clean the cleaning member 42a at a retracted position away from the spin chuck 41. Details of the self-cleaning unit 45 will be described later with reference to FIG.

[0042] The first cleaning unit 4 configured as above operates as follows under the control of the control unit 11. Before the substrate cleaning is performed, the cleaning roller 42 waits at the retreated position.

[0043] First, the substrate W that has been polished in any one of the polishing units 3a to 3d in Fig. 1 is transported onto the spin chuck 41 by the second substrate transport robot 9. Contaminants are attached to this substrate W. The substrate W transported onto the spin chuck 41 is rotated by the piece 41b of the spin chuck 41, and a cleaning liquid is supplied from the cleaning liquid nozzle 43 toward the center of the substrate W. Then, the cleaning roller 42 moves from the self-cleaning portion 45 (retracted position) to above the substrate W (cleaning position) by the operation of the support column 44, and descends while rotating.

[0044] Scrubbing starts as the cleaning member 42a slides against the top surface of the substrate W and moves relative to it. This scrubbing removes contaminants adhering to the top surface of the substrate W. Some of the contaminants removed from the top surface of the substrate W remain on the cleaning member 42a. Also, the cleaning liquid used to clean the substrate and contaminated it may remain on the cleaning member 42a as contaminants. After a predetermined time has elapsed, the support columns 44 rise and the cleaning member 42a moves away from the substrate W, thereby completing the scrubbing.

[0045] After cleaning of one substrate is completed, the cleaning roller 42 moves from above the substrate W to the self-cleaning unit 45 by the operation of the support pillars 44. Then, the self-cleaning unit 45 self-cleans the cleaning member 42a as described below, and removes contaminants remaining on the cleaning member 42a.

[0046] It should be noted that the first cleaning unit 4 holds and rotates the substrate W in a horizontal direction; however, it is sufficient that the self-cleaning section 45 is provided in a retracted position spaced apart from the substrate holding section, and the type of the substrate holding section is not limited to being horizontal, but may also be vertical.

[0047] FIG. 3 is a schematic diagram showing the configuration of the self-cleaning section 45 in the first cleaning unit 4. As shown in FIG.

[0048] The self-cleaning unit 45 has a quartz plate 451 (self-cleaning member) supported on a pedestal 451a, and a self-cleaning liquid nozzle 452 that supplies a cleaning liquid (eg, a chemical solution or pure water) to the upper surface of the quartz plate 451.

[0049] As a self-cleaning component, instead of a quartz plate, a resin plate such as PFA (Poly Tetra Fluoro Etylene), PVDF (Poly Vinylidene DiFluoride), or PET (Polyethyleneterephthalate) can be considered; however, it is preferable that the material be hard enough to resist scratches on the surface, resistant to deformation, and chemically stable (no elution of metals or organic matter, resistant to thermal degradation).

[0050] The self-cleaning liquid nozzle 452 has a cylindrical nozzle support 452a and a conduit 452b embedded inside the nozzle support 452a. Examples of the types of the self-cleaning liquid nozzle 452 include a single-tube nozzle, a line nozzle, a cone nozzle, and a bar nozzle.

[0051] As described above, when cleaning of one substrate is completed, the cleaning roller 42 is moved to the self-cleaning section 45. Then, the cleaning roller 42 is lowered while rotating by the operation of the support column 44 (FIG. 2). The cleaning member 42a is brought into sliding contact with the upper surface of the quartz plate 451, whereby the cleaning member 42a is self-cleaned using the cleaning liquid from the self-cleaning liquid nozzle 452. This self-cleaning removes contaminants remaining on the cleaning member 42a and discharges them together with the cleaning liquid. After a predetermined time has elapsed, the support column 44 rises and the cleaning member 42a separates from the quartz plate 451, thereby completing the self-cleaning. Note that after the substrate cleaning is completed, the self-cleaning process may be started while the cleaning member 42a is still wet.

[0052] The self-cleaning unit 45 also has a self-cleaning liquid drainage pipe 453 and a self-cleaning liquid drainage detection unit 454.

[0053] The self-cleaning liquid drainage pipe 453 is provided below the quartz plate 451, and drains the drainage liquid (cleaning liquid containing contaminants) flowing out from the upper surface of the quartz plate 451 to the outside of the first cleaning unit 4. The self-cleaning liquid drainage detection unit 454 measures the physical property value (water quality) of the drainage liquid flowing to the self-cleaning liquid drainage pipe 453.

[0054] In detail, the self-cleaning liquid drainage pipe 453 has a drainage receiver 453a, a main pipe 453b, and branch pipes 453c and 453d branched from the main pipe 453b. A self-cleaning liquid drainage detector 454 is provided between the branch pipes 453c and 453d.

[0055] The drainage receiver 453a has a bottom surface where the main pipe 453b is connected to the drainage groove 453e on the lower surface, and a side wall extending upward from the outer periphery of the bottom surface. A pedestal 451a is placed on the bottom surface. It is preferable that the bottom surface is inclined downward toward the main pipe 453b so that the drainage liquid can easily flow into the main pipe 453b. It is also preferable that the side wall extends to a position higher than the quartz plate 451 to prevent the drainage liquid from scattering.

[0056] Main pipe 453b extends vertically downward from drainage receiving portion 453a, bends downward, and extends horizontally. Branch pipe 453c branches off from an upstream portion (horizontally extending portion) of main pipe 453b, and is connected to a liquid inlet of self-cleaning drainage detection portion 454. Branch pipe 453d branches off from a downstream portion of main pipe 453b, and is connected to a liquid outlet of self-cleaning drainage detection portion 454.

[0057] When the waste liquid flows through the main pipe 453b, at least a part of it flows into the branch pipe 453c, and further flows into the self-cleaning waste liquid detection unit 454. The waste liquid whose physical property value has been measured by the self-cleaning waste liquid detection unit 454 flows through the branch pipe 453d and merges with the main pipe 453b.

[0058] 4 is a schematic diagram showing the configuration of the self-cleaning drainage detection unit 454. The self-cleaning drainage detection unit 454 has a flow rate regulator 4541, a sensor 4542, a measurement controller 4543, a flushing water supply pipe 4544, and a three-way valve 4545. The control unit 11 and the measurement controller 4543 are connected via a communication cable 455a, and the measurement controller 4543 and the sensor 4542 are connected via a measurement control cable 455b.

[0059] The flow rate regulator 4541 regulates the amount of drainage inflow from the branch pipe 453c to the sensor 4542. As an example, the flow rate regulator 4541 is composed of a flow rate measurement sensor, a valve, and a controller with a CLC function that receives a signal from the flow rate measurement sensor and regulates the opening of the valve. The flow rate regulator 4541 also functions as a bellows pump (a pump that alternately sucks and pushes), and drainage from the sensor 4542 is returned to the main pipe 453b via the branch pipe 453d.

[0060] The sensor 4542 measures the physical property value of the wastewater flowing in from the branch pipe 453c. The sensor 4542 may digitize the degree of contamination (amount of contamination) of the wastewater at a predetermined time corresponding to the measurement from the measured physical property value. Specific examples of the physical property value will be described later.

[0061] The measurement controller 4543 controls the measurement conditions in the sensor 4542 via the measurement control cable 455b, and outputs the physical property values ​​measured by the sensor 4542 and the measurement times as logging data to the control unit 11 via the communication cable 455a. The output signal may include a signal indicating that the measurement operation is ready (contact point) and an alarm indicating an abnormality in the sensor such as a liquid leak. In addition, a signal indicating the start and stop of the measurement operation is input from the control unit 11 to the measurement controller 4543 via the communication cable 455a.

[0062] The control unit 11 determines the degree of contamination (amount of contamination) of the cleaning member 42a based on the measured physical property value. Here, the degree of contamination means how far the measured physical property value deviates from a target value (ideal value) previously set by the user. As a specific example, if the physical property value is within a predetermined normal range, the control unit 11 may determine that the degree of contamination of the cleaning member 42a is within an acceptable range. Also, if the physical property value is not within the predetermined normal range, the control unit 11 may determine that the degree of contamination of the cleaning member 42a is not within an acceptable range.

[0063] Since the normal range depends on the process type (Cu, STI, etc.) and the design rules of the semiconductor element, the normal range is set by creating a set of empirical values.

[0064] Furthermore, the control unit 11 applies a predetermined cleaning state estimation algorithm based on the measured physical property values ​​to estimate the cleaning quality of the substrate W. As a specific example of the cleaning quality, the control unit 11 may estimate what kind of defects (e.g., the number of defects, the size of the defects, the locations of the defects, and the components of the defects (contamination) (abrasive grains, organic matter, residual chemical solution, etc.)) have occurred on the substrate W due to the substrate W being cleaned using the cleaning member 42a. In the following, as an example, the cleaning quality is assumed to be the number of particles (defects) adhering to the substrate W.

[0065] The cleaning state estimation algorithm may be one that previously stores a database of correlations between defects that have occurred in the past (which can be measured by a defect inspection device) and physical property values, and estimates defects from the physical property values ​​using the database. Alternatively, the cleaning state estimation algorithm may be one that previously performs machine learning on correlations between defects that have occurred in the past and physical property values, and estimates defects, their sizes, defect locations, and components of defects (contamination) (abrasive grains, organic matter, residual chemicals, etc.) from the physical property values ​​using artificial intelligence.

[0066] As a simple example, if the measured physical property value is within a predetermined normal range, the control unit 11 determines that the cleaning quality is good (specifically, the number of defects on the surface of the substrate after the cleaning process is small). If the measured physical property value is not within the predetermined normal range, the control unit 11 determines that the cleaning quality is not good. Alternatively, the control unit 11 may estimate the number of defects that will occur on the cleaned substrate depending on how far the measured physical property value is outside the predetermined normal range.

[0067] Furthermore, the control unit 11 may apply a predetermined self-cleaning operation condition determination algorithm based on the measured physical property values ​​to determine the operation conditions for self-cleaning the cleaning member 42a. The operation conditions include, for example, the pressing load and rotation speed of the cleaning roller 42, the pressing load and rotation speed of the cleaning tool 52, the flow rate and temperature of the cleaning liquid supplied from the self-cleaning liquid nozzle 452, the selection of water or chemical liquid, the set time for self-cleaning, and the like.

[0068] The self-cleaning operation condition determination algorithm may be one that previously stores a database of correlations between physical property values ​​and appropriate operation conditions, and estimates appropriate operation conditions according to the physical property values ​​using the database. Alternatively, the self-cleaning operation condition determination algorithm may be one that previously learns the correlations between physical property values ​​and appropriate operation conditions by machine learning, and estimates appropriate operation conditions according to the physical property values ​​using artificial intelligence.

[0069] Furthermore, the control unit 11 may determine the operating conditions for substrate cleaning by applying a predetermined algorithm for determining operating conditions for substrate cleaning based on the measured physical property values. The operating conditions include, for example, the pressing load and rotation speed of the cleaning roller 42, the pressing load and rotation speed of the cleaning tool 52, the rotation speed of the spin chuck 41, the flow rate and temperature of the cleaning liquid supplied from the cleaning liquid nozzle 43, the selection of water or chemical liquid, the scrub cleaning time, the chemical liquid rinsing time, the water rinsing time, etc.

[0070] The algorithm for determining operating conditions for substrate cleaning may be a database of correlations between physical property values ​​and appropriate operating conditions, and may estimate appropriate operating conditions according to the physical property values ​​using the database. Alternatively, the algorithm for determining operating conditions for substrate cleaning may be a machine learning algorithm of correlations between physical property values ​​and appropriate operating conditions, and may estimate appropriate operating conditions according to the physical property values ​​using artificial intelligence.

[0071] Furthermore, the control unit 11 may determine the replacement time of the cleaning member 42a by applying a predetermined replacement time determination algorithm based on the measured physical property values.

[0072] The replacement time determination algorithm may be one in which the correlation between the physical property values ​​and the replacement times is stored in a database in advance, and the replacement time is estimated from the physical property values ​​using the database. Alternatively, the replacement time determination algorithm may be one in which the correlation between the physical property values ​​and the replacement times is machine-learned in advance, and the replacement time is estimated from the physical property values ​​using artificial intelligence. Here, examples of physical property values ​​measured by the sensor 4542 are given.

[0073] The sensor 4542 may include a liquid-borne particle counter, and the physical property value may be the number of particles in the discharged liquid. When there is not much polishing debris remaining on the cleaning member 42a (i.e., when the degree of contamination of the cleaning member 42a is low), the number of particles measured by the liquid-borne particle counter is small. On the other hand, when a lot of polishing debris remains on the cleaning member 42a (i.e., when the degree of contamination of the cleaning member 42a is high), the number of particles measured by the liquid-borne particle counter is large. Therefore, the degree of contamination of the cleaning member 42a can be grasped based on the number of particles in the discharged liquid.

[0074] Moreover, the sensor 4542 may include a pH meter, and the physical property value may be the pH value of the waste liquid. Suppose the suspension used for polishing is alkaline. When there is not much suspension remaining in the cleaning member 42a (i.e., when the degree of contamination of the cleaning member 42a is low), the pH value measured by the pH meter is only slightly higher than 7. On the other hand, when there is a lot of suspension remaining in the cleaning member 42a (i.e., when the degree of contamination of the cleaning member 42a is high), the pH value measured by the pH meter is higher than 7 by a predetermined amount. Therefore, the degree of contamination of the cleaning member 42a can be grasped based on the pH value of the waste liquid.

[0075] The same is true when the cleaning agent used to clean the substrate is alkaline: when there is not much cleaning liquid remaining in the cleaning member 42a, the pH value measured by the pH meter is close to 7, and when there is a lot of cleaning liquid remaining, the pH value measured by the pH meter is higher.

[0076] Moreover, the sensor 4542 may include an electrical conductivity meter, and the physical property value may be the electrical conductivity of the waste liquid. It is assumed that the suspension used in polishing contains ions (cations, anions). When there is not much suspension remaining in the cleaning member 42a (i.e., when the degree of contamination of the cleaning member 42a is low), the electrical conductivity indicates a low numerical value. Conversely, when a large amount of suspension remains, the electrical conductivity indicates a high numerical value. The same applies if the cleaning liquid also contains ions. Therefore, the degree of contamination of the cleaning member 42a can be grasped based on the electrical conductivity of the waste liquid.

[0077] Moreover, the sensor 4542 may include a carbon concentration meter, and the physical property value may be the total organic carbon concentration of the wastewater. It is assumed that the suspension used for polishing contains organic compounds (water-soluble polymers, rust inhibitors, surfactants). If there is not much suspension remaining in the cleaning member 42a (i.e., if the degree of contamination of the cleaning member 42a is low), the total organic carbon concentration indicates a low value. Conversely, if a lot of suspension remains, the total organic carbon concentration indicates a high value. The same applies if the cleaning liquid also contains organic compounds. Therefore, the degree of contamination of the cleaning member 42a can be grasped based on the total organic carbon concentration of the wastewater.

[0078] Furthermore, the physical property value may be another physical property value correlated with the degree of contamination of the cleaning member 42a, or may be a combination of two or more physical property values.

[0079] However, when the wastewater is constantly measured, contaminants in the wastewater may accumulate on the sensor 4542 over time, resulting in an error in the measurement value. In order to prevent this measurement error, it is desirable to clean the sensor 4542 by supplying flushing water (e.g., pure water) from the flushing water supply pipe 4544 via a valve (three-way valve) 4545 at regular intervals.

[0080] As an example, when flushing is performed at the timing of replacing the substrate cleaning member 42a and the sensor 4542 detects the number of particles, the number of particles before and after flushing is as shown in FIG. 5A.

[0081] Fig. 5B is a graph showing a schematic output of a physical property value measured by self-cleaning discharge liquid detection unit 454. In Fig. 5B, as an example, sensor 4542 is a liquid-borne particle counter KS-18F manufactured by Rion Co., Ltd., measurement controller 4543 is a KE-40B1 manufactured by the same company, and flow rate regulator 4541 is a bellows sampler K9904A manufactured by the same company.

[0082] The horizontal axis of the graph indicates the time of measurement, and the vertical axis indicates the number of particles in the liquid per unit volume of the effluent (hereinafter simply referred to as the "particle count"). A higher particle count value indicates a higher degree of contamination of the effluent (a larger amount of contamination).

[0083] In this embodiment, the cleaning roller 42 alternates between scrubbing the substrate W and self-cleaning in the self-cleaning section 45. In detail, self-cleaning is performed in periods T1, T3, and T5, and scrubbing the substrates Wa, Wb, and Wc in periods T2, T4, and T6, respectively. Each of Wa to Wc may refer to one substrate or multiple substrates.

[0084] During self-cleaning in period T1, immediately after the start of self-cleaning from time t1 to t2, contaminants adhering to the cleaning member 42a flow out into the wastewater, causing a temporary large increase in the number of particles, exceeding the normal range.

[0085] However, after time t2, as the cleaning member 42a is cleaned over time during self-cleaning, the number of particles in the wastewater gradually decreases, eventually reaching the normal range at time t3. Then, self-cleaning is completed at time t4. Then, with the number of particles within the normal range, scrubbing cleaning of the substrate Wa is started. At this time, based on the number of particles at time t4, the control unit 11 can determine that cleaning of the substrate Wa has been performed with the degree of contamination of the cleaning member 42a within the allowable range.

[0086] During the time period from time t4 to t5 (period T2) when the substrate Wa is being scrubbed, no contaminants are brought into the self-cleaning portion 45 from the cleaning member 42a, and therefore the number of particles converges to a constant value.

[0087] From time t5 to t6 (period T3), self-cleaning of the cleaning member 42a is performed in the same manner as in period T1. In the example of Fig. 5B, self-cleaning is completed (time t6) with the number of particles still within the normal range in period T3, and scrub cleaning of the substrate Wb is performed in period T4. At this time, based on the number of particles at time t6, the control unit 11 can determine that cleaning of the substrate Wb has been performed with the degree of contamination of the cleaning member 42a within the allowable range.

[0088] From time t7 to t8 (period T5), self-cleaning of the cleaning member 42a is performed in the same manner as in period T1. However, in the example of FIG. 5B, the number of particles does not decrease to the normal range in period T5. This means that the degree of contamination of the cleaning member 42a is large and not within the acceptable range. Then, the self-cleaning is completed with the number of particles exceeding the normal range (time t9), and cleaning of the substrate Wc is performed in period T6. At this time, based on the number of particles at time t9, the control unit 11 can determine that cleaning of the substrate We was performed in a state where the degree of contamination of the cleaning member 42a was not within the acceptable range.

[0089] The completion of the self-cleaning is based on the cleaning process recipe. That is, when a certain time has elapsed since the start of the self-cleaning, the self-cleaning is completed when the time is up in order to start the cleaning process of the next substrate.

[0090] Thus, the example of Fig. 5B shows that the number of particles did not reach the normal range in the self-cleaning (period T5) performed immediately before the cleaning (period T6) of the substrate Wec. That is, the self-cleaning of the cleaning member 42a was insufficient, and the cleaning process of the substrate Wec was started with a large amount of contaminants remaining on the cleaning member 42a. Therefore, there is a high risk of reverse contamination of the substrate Wec. The control unit 11 detects this state of high risk of reverse contamination as an abnormality. Then, the control unit 11 performs control processing such as issuing an alarm as necessary depending on the level of the abnormality.

[0091] For example, if the degree of abnormality is Level 1 (mild abnormality, isolated to one board), a warning may be issued that there is a possibility that the number of defects is greater than for other boards. When the degree of abnormality is level 2 (mild abnormality, two or more wafers in succession), an instruction may be given to control unit 11 to change the operating conditions for self-cleaning or substrate cleaning. If the degree of the abnormality is level 3 (severe abnormality, isolated to one board), a command may be issued to carry out a defect inspection, to carry out a re-cleaning process, or to exclude the product as a defective product. If the degree of abnormality is level 4 (severe abnormality, two or more wafers in succession), the polishing / cleaning process in the substrate processing apparatus may be stopped, and further an instruction may be given to the control unit 11 to replace the cleaning member 42a.

[0092] Although Fig. 5B shows an example in which the physical property value is the number of particles, the behavior is similar when the physical property value is the pH value, electrical conductivity, or total organic carbon concentration. When the physical property value is the pH value, the pH value converges to approximately 7 (neutral) during the period T2 when self-cleaning is not performed.

[0093] Fig. 6 is a flow chart showing an example of a processing operation by the control unit 11. Fig. 6 shows an operation sequence in a complete standby state (a state in Fig. 1 in which a cassette containing a substrate is not placed on the load port 2 of the substrate processing apparatus and the substrate is not polished, cleaned or dried; before time t1 in Fig. 5B). Note that although the control unit 11 is included in the substrate processing apparatus, it can also be said that the first cleaning unit 4 includes the control unit 11 in that it controls each part of the first cleaning unit 4.

[0094] With the cleaning roller 42 placed in the self-cleaning unit 45, the control unit 11 starts measuring the physical property values ​​of the drainage liquid using the sensor 4542 of the self-cleaning drainage liquid detection unit 454. Then, the output of the sensor 4542 is output via the measurement controller 4543, and is read by the control unit 11 (step S1).

[0095] If the read physical property value is within the normal range (YES in step S2), the cleaning member 42a is sufficiently cleaned to perform an appropriate cleaning process on the substrate, and the control unit 11 determines that the substrate is ready for substrate processing including cleaning (step S3).

[0096] On the other hand, if the read physical property value is not within the normal range (NO in step S2), contaminants have accumulated on the cleaning member 42a and cleaning is insufficient. Therefore, the control unit 11 makes a further determination based on the self-cleaning status.

[0097] That is, if the duration from the start of self-cleaning is shorter than the predetermined upper limit time (YES in step S4), the control unit 11 continues self-cleaning of the cleaning member 42a (step S5) and returns to the process of reading the physical property value (step S1). The cleaning duration of the cleaning member 42a is known by the control unit 11. The duration from the start of self-cleaning is the total cleaning time (accumulated time) since the cleaning member 42a was replaced with a new one, and is not reset even if one self-cleaning task is completed (that is, it is reset when the cleaning member 42a is replaced with a new one).

[0098] On the other hand, if the duration from the start of self-cleaning exceeds the predetermined upper limit time (NO in step S4), it is highly likely that the cleanliness of the cleaning member 42a will not improve even if the self-cleaning is continued. Therefore, the control unit 11 stops the self-cleaning and determines that the cleaning roller 42 needs to be replaced (step S6). As a specific example, the control unit 11 outputs a message or alert indicating that the cleaning roller 42 should be replaced, and instructs the user to replace the cleaning roller 42 with a new one.

[0099] The above series of processes is continued until the physical property value reaches the normal range.

[0100] Fig. 7 is a flowchart showing another example of the processing operation by the control unit 11. Fig. 7 shows an operation sequence in a processing state (in Fig. 1, a cassette containing a substrate is placed on the load port 2 of the substrate processing apparatus, and a substrate is present in any one of the polishing units 3a to 3d, the first cleaning unit 4, the second cleaning unit 5, the drying unit 6, the substrate transport robots 22, 26, 28, and the substrate transport unit 8).

[0101] As in the above-described complete standby state (FIG. 6), with the cleaning roller 42 disposed in the self-cleaning unit 45, the control unit 11 starts measuring the physical property values ​​of the drainage liquid by the sensor 4542 of the self-cleaning drainage liquid detection unit 454. Then, the output of the sensor 4542 is output via the measurement controller 4543, and is read by the control unit 11 (step S11).

[0102] If the read physical property value is within the normal range (YES in step S12), the control unit 11 estimates the quality of the substrate cleaning based on a database showing the correlation between the physical property value and the defect (step S13). As a specific example, the control unit 11 estimates the number of defects in the processed substrate.

[0103] On the other hand, if the read physical property value is not within the normal range (NO in step S12), contaminants have accumulated on the cleaning member 42a and cleaning is insufficient. Therefore, the control unit 11 makes a further determination based on the operating status of the cleaning member 42a.

[0104] That is, when the cleaning member 42a is in contact with the upper surface of the substrate (YES in step S14), in other words, when the cleaning member 42a is at the cleaning position and cleaning the substrate (for example, during any of periods T2, T4, or T6 in FIG. 5B), the control unit 11 determines that there is a high risk of back-contamination of the substrate from the cleaning member 42a, and outputs an alarm for a substrate process abnormality (step S15). Furthermore, the control unit 11 estimates the quality of substrate cleaning based on a database showing the correlation between physical property values ​​and defects (step S13).

[0105] On the other hand, if the cleaning member 42a is not in contact with the upper surface of the substrate (NO in step S14), in other words, if the cleaning member 42a is in the retracted position and performing self-cleaning (for example, during any of periods T1, T3, or T5 in FIG. 5B), the control unit 11 determines that the risk of reverse contamination has been avoided and continues self-cleaning of the cleaning member 42a and reading of its physical properties (step S11).

[0106] Since the control unit 11 controls the first cleaning unit 4, the control unit 11 can know whether the cleaning member 42a is in the cleaning position or in the retracted position in step S14. The above-mentioned series of processes is carried out for all the substrates fed.

[0107] As described above, according to the present embodiment, the physical properties of the waste liquid when the cleaning member 42a is self-cleaned are measured. Therefore, the degree of contamination of the cleaning member 42a can be monitored in-line based on the physical properties. Furthermore, the quality of substrate cleaning can be estimated based on the physical properties (or the degree of contamination of the cleaning member 42a).

[0108] The above is about monitoring the degree of contamination of the roll-type cleaning member 42a and estimating the quality of substrate cleaning in the self-cleaning section 45 in the first cleaning unit 4 in Fig. 1. On the other hand, the same can be done for the second cleaning unit 5 or for a cleaning member that is not a roll type. In the following, the second cleaning unit 5 will be described as using a pencil-type cleaning member.

[0109] 8 is a perspective view showing the entire second cleaning unit 5. The second cleaning unit 5 has a spin chuck 51 (substrate holding part), a cleaning tool 52, a cleaning liquid nozzle 53, a swing arm 54, and a self-cleaning part 55.

[0110] The spin chuck 51 horizontally holds the substrate W with its main surface facing upward (upper surface), and rotates the substrate W horizontally at a predetermined rotation speed.

[0111] The cleaning tool 52 has a pencil-shaped cleaning member 52a (substrate cleaning member) attached to the tip thereof, and the cleaning member 52a is rotated. The cleaning member 52a is made of a material such as PVA sponge.

[0112] The cleaning liquid nozzle 53 supplies a cleaning liquid to the upper surface of the substrate W held by the spin chuck 51. The cleaning liquid is, for example, a chemical liquid or pure water.

[0113] The swing arm 54 has the cleaning tool 52 attached to its tip via a support shaft 52b, and swings and raises and lowers the cleaning tool 52. That is, the self-cleaning unit 55 is disposed on a swing trajectory drawn by the cleaning tool 52 by the swing of the swing arm 54, and as the swing arm 54 swings, the cleaning member 52a moves between a position (cleaning position) where the spin chuck 51 is provided and a position (cleaning position) where the self-cleaning unit 55 is provided. Also, as the swing arm 54 rises and falls at the cleaning position, the cleaning member 52a comes into contact with and separates from the substrate W. Furthermore, as the swing arm 54 rises and falls at the retracted position, the cleaning member 52a comes into contact with and separates from a quartz plate 551 (described later) of the self-cleaning unit 55.

[0114] The second cleaning unit 5 configured as above operates as follows under the control of the control unit 11. Before the substrate cleaning is performed, the cleaning member 52a waits at the retreated position.

[0115] 1 is transferred onto the spin chuck 51 by the second substrate transfer robot 9. Contaminants are attached to this substrate. The substrate W transferred onto the spin chuck 51 is rotated at a predetermined rotation speed by the spin chuck 51, and a cleaning liquid is supplied from a cleaning liquid nozzle 53 toward the center of the substrate W.

[0116] Then, the swing arm 54 rises to take the cleaning tool 52 out of the self-cleaning unit 55, and then swings toward the cleaning position to move the cleaning tool 52 above the center of the substrate W. When the cleaning tool 52 is moved from the self-cleaning unit 55 to the cleaning position, it is desirable that the rotation of the cleaning tool 52 be stopped.

[0117] Next, the swing arm 54 descends to bring the lower surface of the cleaning member 52a into contact with the upper surface of the substrate W. The cleaning tool 52 starts rotating at a predetermined rotation speed around the support shaft 52b immediately before coming into contact with the substrate W. With the cleaning member 52a in contact with the upper surface of the substrate W and rotating, the swing arm 54 presses the cleaning member 52a against the substrate W with a predetermined pressure and swings it between the outer periphery and center of the substrate W at a predetermined speed.

[0118] In this manner, the cleaning member 52a slides against the upper surface of the substrate W and moves relative to it, thereby performing scrubbing. This scrubbing removes contaminants adhering to the upper surface of the substrate W. Some of the contaminants removed from the upper surface of the substrate W remain on the cleaning member 52a. Also, the cleaning liquid used to clean the substrate and contaminate it may remain on the cleaning member 52a as contaminants. After a predetermined time has elapsed, the swing arm 54 stops, then rises to separate the cleaning member 52a from the substrate W, thereby completing the scrubbing.

[0119] After cleaning of one substrate is completed, the supply of cleaning liquid from the cleaning liquid nozzle 53 is stopped, and the swing arm 54 swings to move the cleaning tool 52 to the self-cleaning unit 55. Then, the swing arm 54 descends, and the self-cleaning unit 55 self-cleans the cleaning member 52a as described below, thereby removing any contaminants remaining on the cleaning member 52a.

[0120] 9 is a perspective view showing the configuration of the self-cleaning part 55 in the second cleaning unit 5. The self-cleaning part 55 has a quartz plate 551 (self-cleaning member) supported on a pedestal 551a, and a self-cleaning liquid nozzle 552 that supplies a cleaning liquid (e.g., a chemical liquid or pure water) to the upper surface of the quartz plate 551.

[0121] As a self-cleaning component, instead of a quartz plate, a resin plate such as PFA (Poly Tetra Fluoro Etylene), PVDF (Poly Vinylidene DiFluoride), or PET (Polyethyleneterephthalate) can be considered; however, it is preferable that the material be hard enough to resist scratches on the surface, resistant to deformation, and chemically stable (no elution of metals or organic matter, resistant to thermal degradation).

[0122] The self-cleaning liquid nozzle 552 has a cylindrical nozzle support 552a and a conduit 552b embedded inside it.

[0123] As described above, when cleaning of one substrate is completed, the cleaning tool 52 is moved to the self-cleaning section 55 by the swing arm 54 (FIG. 8). Then, the cleaning tool 52 is lowered while rotating by the operation of the swing arm 54. The cleaning member 52a is brought into sliding contact with the upper surface of the quartz plate 551, whereby the cleaning member 52a is self-cleaned using the cleaning liquid from the self-cleaning liquid nozzle 552. This self-cleaning removes contaminants remaining on the cleaning member 52a and discharges them together with the cleaning liquid. After a predetermined time has elapsed, the swing arm 54 rises and the cleaning member 52a is separated from the quartz plate 551, thereby completing the self-cleaning.

[0124] The self-cleaning unit 55 also has a self-cleaning liquid drainage pipe 553 and a self-cleaning liquid drainage detection unit 554. The self-cleaning liquid drainage pipe 553 has a drainage receiving unit 553a with a drainage groove 553e provided on the lower surface, a main pipe 553b, and branch pipes 553c and 553d branched from the main pipe 553b. These are the same as those in Figs. 3 and 4, so detailed description will be omitted.

[0125] 6 and 7 are performed on the second cleaning unit 5 by the control unit 11. The second cleaning unit 5 may have the same configuration as the first cleaning unit 4.

[0126] The above-mentioned embodiments can also be applied to break-in processing (conditioning before starting to use a new substrate cleaning member). Conventionally, a new dummy substrate is cleaned after break-in, and the number of contaminant particles attached to the dummy substrate is measured to determine whether break-in is appropriate. However, according to the above-mentioned embodiments, it is possible to determine whether break-in is appropriate without using a new dummy substrate.

[0127] Specifically, the quartz plate 451, 551 is brought into sliding contact with the cleaning member 42a, 52a before substrate cleaning, and the break-in process of the cleaning member 42a, 52a is performed using the cleaning liquid supplied from the self-cleaning liquid nozzle 452, 552. Then, the sensor 4542 measures the physical property value of the waste cleaning liquid used in the break-in process. Furthermore, the control unit 11 judges whether the break-in process is appropriate or not based on the physical property value of the waste liquid. As an example of the judgment method, if the physical property value of the waste liquid is within a preset normal range, it can be judged as appropriate, and if it exceeds the normal range, it can be judged as inappropriate. Also, the physical property value may be the number of fine particles, pH value, electrical conductivity, total organic carbon concentration, etc. The self-cleaning unit 45, 55 and the control unit 11 can be considered as a break-in device.

[0128] The above-described embodiments have been described for the purpose of enabling a person having ordinary skill in the art to practice the present invention. Various modifications of the above-described embodiments are naturally possible for a person skilled in the art, and the technical idea of ​​the present invention can be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but should be accorded the broadest scope in accordance with the technical idea defined by the claims. [Explanation of symbols]

[0129] 1. Housing 2 Loading port 3a~3d Polishing units 4. First cleaning unit 41 Spin Chuck 41a Spindle 41b Piece 42 Cleaning roller 42a Cleaning material 43 Cleaning fluid nozzle 44 Support column 45 Self-cleaning unit 451 Quartz plate 451a Pedestal 452 Self-cleaning fluid nozzle 452a Nozzle support 452b Conduit 453 Self-cleaning fluid drainage piping 453a Drainage receiving part 453b Main Pipe 453c, 453d Branch piping 453e Drainage groove 454 Self-cleaning drainage detector 4541 Flow regulator 4542 Sensor 4543 Measurement Controller 4544 Flushing water supply piping 4545 Three-way valve 455a Communication Cable 455b Measurement and Control Cable 5 Second cleaning unit 51 Spin Chuck 52 Cleaning equipment 52a Cleaning material 52b Support shaft 53 Cleaning fluid nozzle 54 Swing Arm 55 Self-cleaning unit 551 Quartz plate 552 Self-cleaning fluid nozzle 553 Self-cleaning fluid drainage piping 553a Drainage receiving part 553b Main piping 553c, 553d Branch piping 554 Self-cleaning drainage detector 6 Drying Unit 7. First substrate transfer robot 8. Board transport unit 9. Second substrate transfer robot 10. Third substrate transfer robot 11 Control section

Claims

1. A substrate holder for holding a substrate; a substrate cleaning member that comes into sliding contact with the held substrate and cleans the substrate with a first cleaning liquid supplied from a first nozzle; a self-cleaning member that is in sliding contact with the substrate cleaning member at a retracted position separated from the substrate holding portion and that self-cleans the substrate cleaning member using a second cleaning liquid supplied from a second nozzle; a measuring means for measuring a physical property value of the second cleaning liquid used in the self-cleaning of the substrate cleaning member; a control unit that estimates the number of particles adhering to the cleaned substrate based on a physical property value of the waste liquid; a first pipe for leading a discharged liquid of the second cleaning liquid used for self-cleaning of the substrate cleaning member to the measuring means; A three-way valve provided in the first pipe; a second pipe for supplying flushing water to the measuring means through the three-way valve.

2. The substrate cleaning apparatus according to claim 1 , wherein the physical property value includes at least one of a particle count, a pH value, an electrical conductivity, and a total organic carbon concentration.

3. A substrate holder for holding a substrate; a substrate cleaning member that comes into sliding contact with the held substrate and cleans the substrate with a first cleaning liquid supplied from a first nozzle; a self-cleaning member that is in sliding contact with the substrate cleaning member at a retracted position separated from the substrate holding portion and that self-cleans the substrate cleaning member using a second cleaning liquid supplied from a second nozzle; a measuring means for measuring a physical property value of the second cleaning liquid used in the self-cleaning of the substrate cleaning member; a control unit that determines a degree of contamination of the substrate cleaning member based on a physical property value of the waste liquid; a first pipe for leading a discharged liquid of the second cleaning liquid used for self-cleaning of the substrate cleaning member to the measuring means; A three-way valve provided in the first pipe; a second pipe for supplying flushing water to the measuring means via the three-way valve; The physical property value includes a total organic carbon concentration.

4. The substrate cleaning apparatus according to claim 3 , wherein the control unit estimates a number of particles adhering to the cleaned substrate based on a physical property value of the waste liquid.

5. 5. The substrate cleaning apparatus according to claim 1, wherein the control unit determines operating conditions for self-cleaning based on a physical property value of the waste liquid.

6. The substrate cleaning apparatus according to claim 1 , wherein the control unit determines operating conditions for cleaning the substrate based on a physical property value of the waste liquid.

7. The substrate cleaning apparatus according to claim 1 , wherein the control unit determines a replacement time for the substrate cleaning member based on a physical property value of the waste liquid.

8. a substrate polishing apparatus for polishing a substrate using a suspension; A substrate processing apparatus comprising: the substrate cleaning apparatus according to claim 1 .

9. a self-cleaning member that is in sliding contact with a substrate cleaning member before substrate cleaning and performs a break-in process on the substrate cleaning member using a cleaning liquid supplied from a nozzle; a measuring means for measuring a physical property value of the discharged cleaning liquid used in the break-in process; a control unit that determines whether the break-in process is appropriate based on a physical property value of the drainage liquid; a first pipe for leading a drainage of the cleaning liquid used for self-cleaning of the substrate cleaning member to the measuring means; A three-way valve provided in the first pipe; and a second pipe that supplies flushing water to the measuring means via the three-way valve.

10. The substrate is held by the substrate holder; a substrate cleaning member is brought into sliding contact with the held substrate, and the substrate is cleaned using a first cleaning liquid supplied from a first nozzle; a self-cleaning member is brought into sliding contact with the substrate cleaning member at a retracted position separated from the substrate holding portion, and the substrate cleaning member is self-cleaned using a second cleaning liquid supplied from a second nozzle; measuring a physical property value of the second cleaning liquid used in the self-cleaning of the substrate cleaning member by a measuring means; estimating the number of particles adhering to the cleaned substrate based on the physical property value of the waste liquid; a drainage of the second cleaning liquid used for self-cleaning of the substrate cleaning member is guided to the measuring means through a pipe; The method for estimating the number of particles adhering to a substrate includes supplying flushing water to the measuring means via a three-way valve provided in the piping.

11. The substrate is held by the substrate holder; a substrate cleaning member is brought into sliding contact with the held substrate, and the substrate is cleaned using a first cleaning liquid supplied from a first nozzle; a self-cleaning member is brought into sliding contact with the substrate cleaning member at a retracted position separated from the substrate holding portion, and the substrate cleaning member is self-cleaned using a second cleaning liquid supplied from a second nozzle; measuring a total organic carbon concentration of the second cleaning liquid used in the self-cleaning of the substrate cleaning member by a measuring means; determining a degree of contamination of the substrate cleaning member based on a total organic carbon concentration of the wastewater; a drainage of the second cleaning liquid used for self-cleaning of the substrate cleaning member is guided to the measuring means through a pipe; The method for determining a contamination level of a substrate cleaning member includes supplying flushing water to the measuring means through a three-way valve provided in the piping.

12. a self-cleaning member is brought into sliding contact with a substrate cleaning member before substrate cleaning, and a break-in process is performed on the substrate cleaning member using a cleaning liquid supplied from a nozzle; measuring a physical property value of the waste liquid of the cleaning liquid used in the break-in process by a measuring means; determining whether or not the break-in process is appropriate based on the physical property values ​​of the drainage liquid; a drainage liquid of the cleaning liquid used for self-cleaning of the substrate cleaning member is guided to the measuring means through a pipe; The method for determining break-in processing further comprises supplying flushing water to the measuring means via a three-way valve provided in the piping.

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