Substrate Processing Equipment

Abstract

To provide a substrate processing apparatus and a substrate processing method that can suppress the growth of air bubbles supplied to the processing solution.SOLUTION: A substrate processing apparatus 100 processes a substrate W by immersing the substrate W in the stored processing solution L1, which is the processing solution L stored in the inner tank 112. The substrate processing apparatus 100 has a bubble supply section 130 and a circulation section 160. The bubble supply section 130 supplies air bubbles KA to the stored processing solution L1. The circulation section 160 generates a first solution flow R1 of the stored processing solution L1 to the bubble supply section 130.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus. Place Regarding. [Background technology]

[0002] It is known that substrates used in electronic components such as semiconductor devices and liquid crystal display devices are processed by substrate processing apparatuses that process the substrates by immersing them in a processing solution in a processing bath (see, for example, Patent Document 1).

[0003] The substrate processing apparatus of Patent Document 1 includes a bubble generator having a discharge port. When processing a substrate with an aqueous phosphoric acid solution, the substrate processing apparatus of Patent Document 1 blows a mixed gas from the discharge port of the bubble generator into the aqueous phosphoric acid solution to generate bubbles, thereby aerating and agitating the aqueous phosphoric acid solution. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2018-56258 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, in the substrate processing apparatus of Patent Document 1, air bubbles are sometimes supplied into the phosphoric acid aqueous solution after they have grown to a certain size due to the influence of the surface tension of the discharge port. There has also been a demand for smaller air bubbles generated in the phosphoric acid aqueous solution. The reason is that smaller air bubbles increase the degree of agitation of the phosphoric acid aqueous solution (processing liquid) near the substrate surface, so that the phosphoric acid aqueous solution in contact with the substrate surface can be effectively replaced with fresh phosphoric acid aqueous solution.

[0006] The present invention relates to a substrate processing apparatus capable of suppressing the growth of bubbles supplied to a processing liquid. Place The purpose is to provide. [Means for solving the problem]

[0007] According to the present invention, a substrate processing apparatus processes a substrate by immersing the substrate in a stored processing liquid, which is a processing liquid stored in a storage section. The substrate processing apparatus includes a pipe section and a liquid flow generating section. The pipe section supplies air bubbles to the stored processing liquid. The liquid flow generating section generates a liquid flow of the stored processing liquid with respect to the pipe section. The pipe section includes polyether ether ketone. The inner diameter of the pipe section is 2 mm or more and 10 mm or less. In one embodiment, the pipe portion includes an air bubble outlet that supplies air bubbles that come into contact with the surface of the substrate when rising in the stored processing liquid. In one embodiment, the liquid flow generating unit is configured to generate a liquid flow of the stored treatment liquid around the bubble discharge port, and to apply a shear force to shear the protruding portion of the gas flowing through the tube section, which protrudes from the bubble discharge port into the stored treatment liquid, from the gas flowing through the tube section.

[0008] One embodiment The outer diameter of the tube portion is 6 mm or more and 12 mm or less.

[0009] One embodiment In the method, the stored treatment liquid is an aqueous solution of phosphoric acid. In one embodiment, the bubble outlet is open in a lateral direction. The lateral direction may be parallel to the horizontal direction. Effect of the Invention

[0023] The substrate processing apparatus of the present invention Place This makes it possible to prevent the air bubbles supplied to the treatment liquid from becoming large. [Brief description of the drawings]

[0024] [Figure 1] 1 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is a flow chart showing a substrate processing method according to the present embodiment. [Diagram 3] 1A is a diagram illustrating a state of a substrate before being immersed in a stored treatment liquid, and FIG. 1B is a diagram illustrating a state of the substrate immersed in the stored treatment liquid. [Figure 4] FIG. 1 is a view of the pipe group as seen from the Z-axis direction. [Diagram 5] 4 is a diagram showing a first example of the positional relationship between an air bubble discharge port and a treatment liquid discharge port. FIG. [Figure 6]1A is a first schematic diagram showing the principle of how bubbles are released from a bubble release port, and FIG. 1B is a second schematic diagram showing the principle of how bubbles are released from a bubble release port. [Figure 7] 13 is a third schematic diagram showing the principle of how bubbles are released from a bubble release port. FIG. [Figure 8] 13 is a diagram showing a second example of the positional relationship between the air bubble discharge port and the treatment liquid discharge port. FIG. [Figure 9] 13 is a diagram showing a third example of the positional relationship between an air bubble discharge port and a treatment liquid discharge port. FIG. [Figure 10] 13 is a diagram showing a fourth example of the positional relationship between the air bubble discharge port and the treatment liquid discharge port. FIG. [Figure 11] 13 is a diagram showing a fifth example of the positional relationship between an air bubble discharge port and a treatment liquid discharge port. FIG. [Figure 12] FIG. 13 is a schematic diagram showing an example of a configuration for applying a shear force to a raised portion of a gas. [Figure 13] 13A is a fourth schematic diagram showing the principle of how bubbles are released from a bubble release port, and FIG. 13B is a fifth schematic diagram showing the principle of how bubbles are released from a bubble release port. [Figure 14] FIG. 13 is a diagram showing a first modified example of a bubble discharge port. [Figure 15] FIG. 13 is a diagram showing a second modified example of the air bubble discharge port. [Figure 16] FIG. 13 is a diagram showing a modified example of the gas supply pipe. [Figure 17] 1 is a table showing the results of a comparison between PEEK, PFA, and PTFE. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] An embodiment of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference symbols and the description will not be repeated. In this specification, to facilitate understanding of the invention, an X-axis, a Y-axis, and a Z-axis that are perpendicular to each other may be described. Typically, the X-axis and the Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0026] [First embodiment] A substrate processing apparatus 100 according to a first embodiment of the present invention will be described with reference to Fig. 1. Fig. 1 is a schematic diagram of the substrate processing apparatus 100 according to the first embodiment of the present invention. The substrate processing apparatus 100 processes a plurality of substrates W collectively. For example, the substrate processing apparatus 100 etches the plurality of substrates W collectively.

[0027] The substrate W is in the form of a thin plate. Typically, the substrate W is in the form of a thin, approximately circular plate. The substrate W includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, and a substrate for a solar cell.

[0028] The substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes a plurality of substrates W at once using a processing liquid L. The processing liquid L performs at least one of etching, surface treatment, imparting properties, forming a processing film, removing at least a portion of a film, and cleaning on the substrate W.

[0029] The substrate processing apparatus 100 includes a processing bath 110, a substrate holding unit 120, a bubble supply unit 130, and a control unit 140. The processing bath 110 stores a processing liquid L therein.

[0030] The processing tank 110 includes an inner tank 112, an outer tank 114, and a restricting portion 112a. The processing tank 110 has a double tank structure composed of the inner tank 112 and the outer tank 114. The inner tank 112 and the outer tank 114 each have an opening that opens upward. The inner tank 112 is configured to store a processing liquid L and to be able to accommodate a plurality of substrates W. The outer tank 114 is provided outside the opening of the inner tank 112. The height of the upper edge of the outer tank 114 is higher than the height of the upper edge of the inner tank 112.

[0031] The inner tank 112 is an example of a storage unit of the present invention. Hereinafter, the processing liquid L stored in the inner tank 112 may be referred to as a stored processing liquid L1.

[0032] The inner bath 112 is provided with restricting portions 112a. The restricting portions 112a are provided at both ends in the X direction of the substrate W when the substrate W is processed so as to face both main surfaces of the substrate W. The restricting portions 112a restrict the position of the substrate W. Therefore, the substrate W is processed uniformly at a predetermined position.

[0033] The treatment tank 110 has a lid 116. The lid 116 can be opened and closed relative to the opening of the inner tank 112. When the lid 116 is closed, the lid 116 can close the opening of the inner tank 112.

[0034] The lid 116 has an opening portion 116a and an opening portion 116b. The opening portion 116a is located on the -X direction side of the opening of the inner tank 112. The opening portion 116a is arranged near the upper edge of the inner tank 112 and can be opened and closed relative to the opening of the inner tank 112. The opening portion 116b is located on the +X direction side of the opening of the inner tank 112. The opening portion 116b is arranged near the upper edge of the inner tank 112 and can be opened and closed relative to the opening of the inner tank 112. The opening portion 116a and the opening portion 116b are closed to cover the opening of the inner tank 112, thereby blocking the inner tank 112 of the treatment tank 110.

[0035] A drainage pipe 118a is connected to the bottom wall of the inner tank 112. A valve 118b is disposed in the drainage pipe 118a. The valve 118b is opened and closed by the control unit 140. When the valve 118b is opened, the stored treatment liquid L1 is discharged to the outside of the inner tank 112 through the drainage pipe 118a, and then sent to a waste liquid treatment device (not shown) for treatment.

[0036] The substrate holding part 120 holds a substrate W. The substrate holding part 120 includes a lifter. The substrate holding part 120 holds a plurality of substrates W collectively and immerses them in the stored processing liquid L1. Note that the substrate holding part 120 may hold only one substrate W and immerse it in the stored processing liquid L1.

[0037] The substrate holding part 120 includes a main body plate 122 and holding rods 124. The main body plate 122 is a plate extending in the vertical direction (Z direction). The holding rods 124 extend in the horizontal direction (Y direction) from one main surface of the main body plate 122. In the first embodiment, three holding rods 124 extend in the Y direction from one main surface of the main body plate 122. With the multiple substrates W arranged in the depth direction of the page, the lower edges of the substrates W are held in an upright position (vertical position) by the multiple holding rods 124.

[0038] The substrate holding part 120 may further include a lifting unit 126. The lifting unit 126 raises and lowers the main body plate 122 between a processing position (position shown in FIG. 10) where the substrate W held by the substrate holding part 120 is located in the inner bath 112 and a retracted position (not shown) where the substrate W held by the substrate holding part 120 is located above the inner bath 112. Therefore, when the main body plate 122 is moved to the processing position by the lifting unit 126, the multiple substrates W held by the holding rods 124 are immersed in the stored processing liquid L1. As a result, the substrates W are subjected to an etching process.

[0039] The air bubble supplying unit 130 supplies air bubbles to the stored treatment liquid L1.

[0040] The bubble supply unit 130 includes a gas supply pipe 131. The gas supply pipe 131 is a tubular member. The gas supply pipe 131 is made of, for example, quartz. The gas supply pipe 131 is disposed in the inner tank 112. The gas supply pipe 131 is immersed in the stored treatment liquid L1. The stored treatment liquid L1 exists outside the bubble supply unit 130.

[0041] A gas flows inside the gas supply pipe 131. The gas is, for example, an inert gas. The gas includes, for example, nitrogen gas. The gas may be air.

[0042] An air bubble discharge port M is formed in the gas supply pipe 131. The air bubble discharge port M is a hole that communicates between the inside and the outside of the gas supply pipe 131. The air bubble discharge port M is immersed in the stored treatment liquid L1, and thereby disposed in the stored treatment liquid L1.

[0043] The gas flowing inside the gas supply pipe 131 is discharged into the stored treatment liquid L1 through the air bubble discharge port M. The gas flowing inside the gas supply pipe 131 becomes air bubbles when it is discharged from the air bubble discharge port M. As a result, air bubbles are discharged from the air bubble discharge port M into the stored treatment liquid L1.

[0044] The gas supply pipe 131 is an example of a first pipe portion of the present invention.

[0045] The air bubbles supplied from the air bubble discharge port M into the stored treatment liquid L1 rise in the stored treatment liquid L1 and reach the upper surface of the stored treatment liquid L1.

[0046] When the air bubbles rise in the stored processing liquid L1, the air bubbles come into contact with the surface of the substrate W. In this case, the air bubbles move upward on the surface of the substrate W while pushing out the portion of the stored processing liquid L1 that is in contact with the substrate W. After the air bubbles have passed, fresh processing liquid L that was present around the air bubbles enters the area where the air bubbles were present and comes into contact with the surface of the substrate W. Therefore, the processing liquid L around the surface of the substrate W can be agitated by the air bubbles, so that the processing liquid L that is in contact with the surface of the substrate W can be replaced with fresh processing liquid L. As a result, the processing speed of the substrate W can be improved.

[0047] The control unit 140 is configured using, for example, a microcomputer. The control unit 140 has a processor such as a CPU (Central Processing Unit) and a storage device such as a fixed memory device or a hard disk drive. The storage device stores a program to be executed by the processor. The processor of the control unit 140 executes the program stored in the storage device to control each element of the substrate processing apparatus 100.

[0048] The processor of the control unit 140 controls the air bubble supply unit 130, thereby controlling the supply of air bubbles by the air bubble supply unit 130. The processor of the control unit 140 controls the start and stop of the supply of air bubbles by the air bubble supply unit 130.

[0049] The substrate processing apparatus 100 further includes a gas transfer unit 150 and a circulation unit 160 .

[0050] The gas transport unit 150 transports the gas into the inside of the gas supply pipe 131 .

[0051] Gas conveying unit 150 includes pipe 152, valve 154, and adjustment valve 156. Valve 154 and adjustment valve 156 are disposed in pipe 152. Pipe 152 is connected to gas supply pipe 131. Pipe 152 introduces gas into gas supply pipe 131. Valve 154 opens and closes pipe 152. The adjustment valve 156 adjusts the opening of pipe 152 to adjust the flow rate of gas conveyed into gas supply pipe 131.

[0052] The circulation unit 160 circulates the stored treatment liquid L1 to generate a liquid flow of the stored treatment liquid L1. The circulation unit 160 is an example of a liquid flow generating unit of the present invention.

[0053] The circulation section 160 includes a pipe 161 , a pump 162 , a filter 163 , a heater 164 , an adjustment valve 165 , a valve 166 , and a processing liquid supply pipe 167 .

[0054] The pipe 161 guides the processing liquid L discharged from the outer bath 114 to the inner bath 112. A processing liquid supply pipe 167 is connected to the downstream end of the pipe 161.

[0055] The pump 162 sends the processing liquid L from the pipe 161 to the inside of the processing liquid supply pipe 167. The filter 163 filters the processing liquid L flowing through the pipe 161. The heater 164 heats the processing liquid L flowing through the pipe 161. The heater 164 adjusts the temperature of the processing liquid L.

[0056] The adjustment valve 165 adjusts the flow rate of the processing liquid L supplied into the processing liquid supply pipe 167 by adjusting the opening degree of the pipe 161. The adjustment valve 165 adjusts the flow rate of the processing liquid L. The adjustment valve 165 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position. The same applies to the other adjustment valves. The valve 166 opens and closes the pipe 161.

[0057] The processing liquid supply pipe 167 is a tubular member. The processing liquid supply pipe 167 is disposed in the inner bath 112 of the processing bath 110. The processing liquid supply pipe 167 is immersed in the stored processing liquid L1. Outside the processing liquid supply pipe 167, the stored processing liquid L1 exists.

[0058] A processing liquid discharge port N is formed in the processing liquid supply pipe 167. The processing liquid discharge port N is a hole that communicates the inside and outside of the processing liquid supply pipe 167. The processing liquid discharge port N is immersed in the stored processing liquid L1, and is thereby disposed in the stored processing liquid L1.

[0059] The processing liquid L flowing inside the processing liquid supply pipe 167 is discharged to the outside of the processing liquid supply pipe 167 through the processing liquid discharge port N. As a result, the processing liquid L flowing inside the processing liquid supply pipe 167 is discharged from the processing liquid discharge port N into the stored processing liquid L1.

[0060] The processing liquid supply pipe 167 is an example of the second pipe section of the present invention.

[0061] The adjusting valve 165 may be omitted. In this case, the flow rate of the processing liquid L supplied to the processing liquid supply pipe 167 is adjusted by controlling the pump 162.

[0062] The substrate processing apparatus 100 further includes a processing liquid supply unit 170 and a water supply unit 180 .

[0063] The processing liquid supply unit 170 further includes a nozzle 172, a pipe 174, and a valve 176. The nozzle 172 ejects the processing liquid L into the inner tank 112. The nozzle 172 is connected to the pipe 174. The processing liquid L is supplied to the pipe 174 from a processing liquid supply source. A valve 176 is disposed in the pipe 174.

[0064] When the control unit 140 opens the valve 176, the processing liquid L discharged from the nozzle 172 is supplied into the inner tank 112. Then, when the processing liquid L overflows from the upper edge of the inner tank 112, the overflowing processing liquid L is received and collected by the outer tank 114.

[0065] The water supply unit 180 supplies water to the outer tank 114. The water supply unit 180 includes a nozzle 182, a pipe 184, and a valve 186. The nozzle 182 ejects water into the outer tank 114. The nozzle 182 is connected to the pipe 184. The water supplied to the pipe 184 may be any one of DIW (deionized water), carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm). Water is supplied to the pipe 184 from a water supply source. A valve 186 is disposed in the pipe 184. When the control unit 140 opens the valve 186, the water ejected from the nozzle 182 is supplied into the outer tank 114.

[0066] For example, the substrate processing apparatus 100 performs an etching process for a silicon oxide film (oxide film) and a silicon nitride film (nitride film) on the surface of a substrate W made of a silicon substrate on which a pattern is to be formed. In such an etching process, the oxide film and the nitride film are selectively removed from the surface of the substrate W. The processing liquid L is, for example, a liquid containing phosphoric acid. The processing liquid L may be a liquid containing a mixed acid.

[0067] Next, a method for processing a substrate W by the substrate processing apparatus 100 will be described with reference to Fig. 1 to Fig. 3(b). Fig. 2 is a flow diagram showing the method for processing a substrate W in this embodiment. Fig. 3(a) is a diagram showing a state before the substrate W is immersed in the stored processing liquid L1. Fig. 3(b) is a diagram showing a state after the substrate W is immersed in the stored processing liquid L1.

[0068] 1 and 2, in S101, the circulation unit 160 starts circulating the processing liquid L. The control unit 140 opens the valve 166, so that the processing liquid L flows through the inner bath 112, the outer bath 114, the piping 161, and the processing liquid supply pipe 167 in that order. The processing liquid L supplied from the piping 161 to the inside of the processing liquid supply pipe 167 is discharged from the processing liquid discharge port N into the stored processing liquid L1. As a result, the processing liquid L circulates.

[0069] As shown in Figures 2, 3(a) and 3(b), in S102, the lifting unit 126 lowers the substrate W while holding it with the main body plate 122 and the holding rod 124, thereby immersing the substrate W in the stored processing liquid L1.

[0070] 1 and 2, in S103, the air bubble supplying unit 130 starts a process of supplying air bubbles into the stored treatment liquid L1. The control unit 140 opens the valve 154, whereby air bubbles are discharged from the air bubble discharge port M of the gas supply pipe 131 into the stored treatment liquid L1.

[0071] In S104, the control unit 140 closes the valve 154 to terminate the bubble supply process by the bubble supply unit .

[0072] In S105, the lifting unit 126 lifts the substrate W while holding it with the main body plate 122 and the holding rods 124, thereby lifting the substrate W out of the stored processing liquid L1. As a result, the processing of the substrate W is completed.

[0073] Next, the gas supply pipe 131 and the processing liquid supply pipe 167 will be described with reference to FIGS.

[0074] As shown in Fig. 1, the substrate processing apparatus 100 includes a pipe group G1. The pipe group G1 is composed of a gas supply pipe 131 and a pair of processing liquid supply pipes 167. In the first embodiment, a plurality of pipe groups G1 are provided. Specifically, two pipe groups G1 are provided. The two pipe groups G1 are disposed symmetrically with respect to a virtual center line CL. The virtual center line CL is a virtual line that passes through the center of the inner tank 112 and is parallel to the Z-axis.

[0075] FIG. 4 is a view of the pipe group G1 as viewed from the Z-axis direction.

[0076] 1 and 4, the gas supply pipe 131 and the processing liquid supply pipe 167 are disposed in the bottom 12a (see FIG. 5) of the inner tank 112. The gas supply pipe 131 and the processing liquid supply pipe 167 are located below the substrate W immersed in the stored processing liquid L1. Each of the gas supply pipe 131 and the processing liquid supply pipe 167 extends along the Y-axis direction.

[0077] A plurality of air bubble discharge ports M are formed in the gas supply pipe 131. The plurality of air bubble discharge ports M are aligned along the Y-axis direction. The inner diameter of the gas supply pipe 131 is, for example, about 1 mm or less. The inner diameter of the air bubble discharge port M is, for example, about 5 mm or less.

[0078] A plurality of processing liquid discharge ports N are formed in the processing liquid supply pipe 167. The plurality of processing liquid discharge ports N are aligned along the Y-axis direction. The inner diameter of the processing liquid supply pipe 167 is, for example, about 30 mm or less. The inner diameter of the processing liquid discharge port N is, for example, about 2 mm or less.

[0079] In the piping group G1, the gas supply pipe 131 and the pair of processing liquid supply pipes 167 are arranged parallel to each other. In the piping group G1, the gas supply pipe 131 and the pair of processing liquid supply pipes 167 are aligned along the X-axis direction. In the piping group G1, the gas supply pipe 131 is arranged between the pair of processing liquid supply pipes 167. The pair of processing liquid supply pipes 167 are arranged to sandwich the gas supply pipe 131 therebetween.

[0080] Next, a first example of the positional relationship between the air bubble discharge port M and the treatment liquid discharge port N will be described with reference to Fig. 4 and Fig. 5. Fig. 5 is a diagram showing a first example of the positional relationship between the air bubble discharge port M and the treatment liquid discharge port N.

[0081] In the following, the description will be focused on the pipe group G11, which is one of the two pipe groups G1, and the description will be focused on the air bubble discharge port M1, which is one of the plurality of air bubble discharge ports M, and the processing liquid discharge port N1, which is one of the plurality of processing liquid discharge ports N.

[0082] 4 and 5, in the pipe group G11, a processing liquid discharge port N1 is formed in each of a pair of processing liquid supply pipes 167. The processing liquid discharge port N1 is disposed on the side of the processing liquid supply pipe 167 where the air bubble discharge port M1 is located.

[0083] In the piping group G11, an air bubble discharge port M1 is formed in the gas supply pipe 131. The air bubble discharge port M1 is disposed at the upper end of the gas supply pipe 131.

[0084] The pair of processing liquid discharge ports N1 are disposed with a gap between them. The air bubble discharge port M1 is disposed between the pair of processing liquid discharge ports N1. When viewed from the Z-axis direction (viewed from above), the air bubble discharge port M1 is disposed to the side of the processing liquid discharge port N1.

[0085] Each of the pair of processing liquid discharge ports N1 opens toward a first direction D1. The first direction D1 is a direction from a center T1 of the processing liquid supply pipe 167 toward the gas supply pipe 131. In detail, the first direction D1 is a direction from the center T1 of the processing liquid supply pipe 167 toward the bubble discharge port M1 of the gas supply pipe 131. The center T1 of the processing liquid supply pipe 167 is the center of a cross section of the processing liquid supply pipe 167 formed when a place of the processing liquid supply pipe 167 where the processing liquid discharge port N1 is located is cut in a direction perpendicular to the extension direction of the processing liquid supply pipe 167 (Y-axis direction).

[0086] Next, the principle of how a bubble KA is released from the bubble release port M1 of the gas supply pipe 131 will be described with reference to Figs. 6(a) is a first schematic diagram showing the principle of how a bubble KA is released from the bubble release port M1. Fig. 6(b) is a second schematic diagram showing the principle of how a bubble KA is released from the bubble release port M1. Fig. 7 is a third schematic diagram showing the principle of how a bubble KA is released from the bubble release port M1.

[0087] 5 and 6(a), each of the pair of treatment liquid discharge ports N1 opens toward the first direction D1 and discharges the treatment liquid L in the first direction D1. As a result, a first liquid flow R1 of the stored treatment liquid L1 is generated so as to flow from each of the pair of treatment liquid discharge ports N1 toward the first direction D1.

[0088] The first liquid flow R1 is generated in the first direction D1, and flows toward the air bubble discharge port M1, and then flows around the air bubble discharge port M1.

[0089] As shown in Fig. 5 and Fig. 6(b), a raised portion KI of the gas K is generated in the stored treatment liquid L1. The raised portion KI is a portion of the gas K supplied to the gas supply pipe 131 that rises from the bubble discharge port M1 into the stored treatment liquid L1. A first liquid flow R1 flows around the raised portion KI. In the first embodiment, the raised portion KI is located between a pair of first liquid flows R1.

[0090] The raised portion KI receives the pressure of the first liquid flow R1 flowing around the air bubble discharge port M1. As a result, the raised portion KI is easily sheared (separated) from the gas K present inside the gas supply pipe 131.

[0091] The pressure due to the flow of the first liquid flow R1 is a first example of a shear force of the present invention.

[0092] 5 and 7, when the raised portion KI is sheared, it becomes an air bubble KA. The air bubble KA rises in the stored treatment liquid L1.

[0093] 1 to 7, the circulation unit 160 generates a first liquid flow R1 of the stored processing liquid L1 to the bubble supply unit 130 by discharging the processing liquid L from the processing liquid discharge port N1 of the processing liquid supply pipe 167. Therefore, as shown in Fig. 6(b), the pressure of the first liquid flow R1 can be applied to the growing raised portion KI. As a result, the growing raised portion KI can be sheared early, and the size of the bubble KA can be suppressed.

[0094] Furthermore, by shearing the raised portion KI at an early stage, the number of bubbles KA generated per unit time can be increased, and as a result, the substrate W can be processed quickly using a large number of small bubbles KA.

[0095] [Second embodiment] A substrate processing apparatus 100 according to a second embodiment of the present invention will be described with reference to Fig. 8. Fig. 8 is a diagram showing a second example of the positional relationship between the bubble discharge port M and the processing liquid discharge port N.

[0096] The second embodiment differs from the first embodiment in the direction in which the treatment liquid discharge port N1 opens. The following mainly describes the differences from the first embodiment. The following description focuses on the pipe group G11.

[0097] As shown in FIG. 8, when viewed from the Z-axis direction, the air bubble discharge port M1 is disposed to the side of the treatment liquid discharge port N1.

[0098] Each of the pair of processing liquid discharge ports N1 is disposed on the lower end side of the processing liquid supply pipe 167. Each of the pair of processing liquid discharge ports N1 opens toward a second direction D2. The second direction D2 is a direction from the center T1 of the processing liquid supply pipe 167 toward the bottom 12a of the inner tank 112, reflected by the bottom 12a of the inner tank 112, and then toward the gas supply pipe 131.

[0099] Each of the pair of treatment liquid discharge ports N1 opens toward the second direction D2 and discharges the treatment liquid L in the second direction D2. As a result, a second liquid flow R2 of the stored treatment liquid L1 is generated so as to flow from each of the pair of treatment liquid discharge ports N1 toward the second direction D2.

[0100] The second liquid flow R2 is generated in the second direction D2, and flows toward the bottom 12a of the inner tank 112, and after being reflected at the bottom 12a of the inner tank 112, flows toward the gas supply pipe 131. The second liquid flow R2 that reaches the gas supply pipe 131 flows along the outer periphery of the gas supply pipe 131. Then, the second liquid flow R2 flows around the bubble discharge port M1, and then passes through the gas supply pipe 131.

[0101] The second liquid flow R2 flowing around the bubble discharge port M1 applies pressure to the raised portion KI (see FIG. 6(b)) of the gas K. Therefore, the pressure of the second liquid flow R2 can shear the growing raised portion KI early. As a result, the bubble KA can be prevented from becoming large.

[0102] The pressure due to the flow of the second liquid flow R2 is a second example of a shear force of the present invention.

[0103] [Third embodiment] A substrate processing apparatus 100 according to a third embodiment of the present invention will be described with reference to Fig. 9. Fig. 9 is a diagram showing a third example of the positional relationship between the bubble discharge port M and the processing liquid discharge port N.

[0104] The third embodiment differs from the first embodiment in the position of the processing liquid supply pipe 167 relative to the gas supply pipe 131. The following mainly describes the differences from the first embodiment. The following description focuses on the pipe group G11.

[0105] 9, in the third embodiment, the pipe group G1 is made up of one gas supply pipe 131 and one processing liquid supply pipe 167. The processing liquid supply pipe 167 is disposed below the gas supply pipe 131.

[0106] The processing liquid discharge port N1 is disposed below the air bubble discharge port M1. The processing liquid discharge port N1 is disposed on the upper end side of the processing liquid supply pipe 167. The processing liquid discharge port N1 opens toward a third direction D3. The third direction D3 is a direction from the center T1 of the processing liquid supply pipe 167 toward the gas supply pipe 131. In the third embodiment, the third direction D3 is an upward direction.

[0107] The treatment liquid discharge port N1 opens toward the third direction D3 and discharges the treatment liquid L in the third direction D3. As a result, a third liquid flow R3 of the stored treatment liquid L1 is generated so as to flow from the treatment liquid discharge port N1 toward the third direction D3.

[0108] The third liquid flow R3 is generated in the third direction D3 and flows toward the gas supply pipe 131. The third liquid flow R3 that reaches the gas supply pipe 131 flows along the outer periphery of the gas supply pipe 131. The third liquid flow R3 flows around the bubble release port M1, and then passes through the gas supply pipe 131. When the third liquid flow R3 reaches the gas supply pipe 131, it is separated into a pair of third liquid flows R3, and the pair of third liquid flows R3 flow along the outer periphery of the gas supply pipe 131 so as to sandwich the gas supply pipe 131 therebetween.

[0109] The third liquid flow R3 flowing around the bubble discharge port M1 applies pressure to the raised portion KI (see FIG. 6(b)) of the gas K. Therefore, the pressure of the third liquid flow R3 can shear the growing raised portion KI early. As a result, the bubble KA can be prevented from becoming large.

[0110] The pressure due to the flow of the third liquid flow R3 is a third example of a shear force of the present invention.

[0111] [Fourth embodiment] A substrate processing apparatus 100 according to a fourth embodiment of the present invention will be described with reference to Fig. 10. Fig. 10 is a diagram showing a fourth example of the positional relationship between the bubble discharge port M and the processing liquid discharge port N.

[0112] The fourth embodiment differs from the first embodiment in the position of the processing liquid supply pipe 167 relative to the gas supply pipe 131. The following mainly describes the differences from the first embodiment. The following description focuses on the pipe group G11.

[0113] As shown in FIG. 10, the pair of processing liquid supply pipes 167 are disposed below the gas supply pipe 131 with a gap between them.

[0114] When viewed from the Z-axis direction, the air bubble discharge port M1 is disposed to the side of the treatment liquid discharge port N1.

[0115] Each of the pair of processing liquid discharge ports N1 is disposed on the upper end side of the processing liquid supply pipe 167. The processing liquid discharge port N1 opens toward a fourth direction D4. The fourth direction D4 is a direction from the center T1 of the processing liquid supply pipe 167 toward the gas supply pipe 131. In the fourth embodiment, the fourth direction D4 is an obliquely upward direction.

[0116] Each of the pair of treatment liquid discharge ports N1 opens toward the fourth direction D4 and discharges the treatment liquid L in the fourth direction D4. As a result, a fourth liquid flow R4 of the stored treatment liquid L1 is generated so as to flow from each of the pair of treatment liquid discharge ports N1 toward the fourth direction D4.

[0117] The fourth liquid flow R4 is generated in the fourth direction D4, and flows toward the gas supply pipe 131. The fourth liquid flow R4 that reaches the gas supply pipe 131 flows along the outer periphery of the gas supply pipe 131. Then, the fourth liquid flow R4 passes through the gas supply pipe 131 after flowing around the bubble discharge port M1.

[0118] The fourth liquid flow R4 flowing around the bubble discharge port M1 applies pressure to the raised portion KI (see FIG. 6(b)) of the gas K. Therefore, the pressure of the fourth liquid flow R4 can shear the growing raised portion KI early. As a result, the bubble KA can be prevented from becoming large.

[0119] The pressure due to the flow of the fourth liquid flow R4 is a fourth example of a shear force of the present invention.

[0120] [Fifth embodiment] A substrate processing apparatus 100 according to a fifth embodiment of the present invention will be described with reference to Fig. 11. Fig. 11 is a diagram showing a fifth example of the positional relationship between the bubble discharge port M and the processing liquid discharge port N.

[0121] The fifth embodiment differs from the first embodiment in that the processing liquid L is discharged in multiple directions from the processing liquid supply pipe 167. The following mainly describes the differences from the first embodiment, and also focuses on the pipe group G11.

[0122] 11, a plurality of processing liquid outlets N are formed in each of the pair of processing liquid supply pipes 167. In the third embodiment, three processing liquid outlets N are formed in each of the pair of processing liquid supply pipes 167. The three processing liquid outlets N are composed of a processing liquid outlet N1, a processing liquid outlet N2, and a processing liquid outlet N3.

[0123] 5, and opens toward a first direction D1. As a result, a first liquid flow R1 is generated by the treatment liquid discharge port N1, thereby achieving the same effect as in the first embodiment.

[0124] The treatment liquid discharge port N2 opens toward a sixth direction D6 different from the first direction D1, thereby generating a liquid flow of the stored treatment liquid L1 from the treatment liquid discharge port N2 toward the sixth direction D6. The treatment liquid discharge port N3 opens toward a seventh direction D7 different from the first direction D1 and the sixth direction D6, thereby generating a liquid flow of the stored treatment liquid L1 from the treatment liquid discharge port N3 toward the seventh direction D7. The seventh direction D7 is a direction symmetrical to the first direction D1 with respect to the sixth direction D6. By generating a liquid flow of the stored treatment liquid L1 in addition to the first liquid flow R1, the stored treatment liquid L1 can be effectively agitated.

[0125] [Sixth embodiment] A substrate processing apparatus 100 according to a sixth embodiment of the present invention will be described with reference to Figures 12 to 13(b). Figure 12 is a schematic diagram showing an example of a configuration for applying a shear force to a raised portion KI of a gas K.

[0126] The sixth embodiment differs from the first embodiment in that a liquid flow of the stored treatment liquid L1 is not used, but a shear force is applied to the raised portion KI of the gas K by moving the bubble discharge port M. The following mainly describes the differences from the first embodiment.

[0127] As shown in FIG. 12, the substrate processing apparatus 100 further includes a moving unit 190 .

[0128] The moving unit 190 moves the gas supply pipe 131 relative to the inner tank 112 (see FIG. 1). The moving unit 190 includes, for example, a motor. The moving unit 190 vibrates the gas supply pipe 131. The moving unit 190 is controlled by the control unit 140.

[0129] Next, the principle of how a bubble KA is released from the bubble release port M1 of the gas supply pipe 131 will be described with reference to Figures 12 to 13(b). Figure 13(a) is a fourth schematic diagram showing the principle of how a bubble KA is released from the bubble release port M1. Figure 13(b) is a fifth schematic diagram showing the principle of how a bubble KA is released from the bubble release port M1.

[0130] 12 and 13(a), the moving part 190 vibrates the gas supply pipe 131, thereby vibrating the raised portion KI of the gas K. As a result, the raised portion KI is easily sheared from the gas K present inside the gas supply pipe 131.

[0131] The vibration applied to the gas supply pipe 131 is a fifth example of the shear force of the present invention.

[0132] 12 and 13(b), when the raised portion KI is sheared, it becomes an air bubble KA. The air bubble KA rises in the stored treatment liquid L1.

[0133] As described above with reference to Fig. 12 to Fig. 13(b), the moving part 190 vibrates the gas supply pipe 131. Therefore, it is possible to apply vibration to the growing raised portion KI. As a result, it is possible to shear the growing raised portion KI early, and it is possible to suppress the growth of the air bubble KA.

[0134] The moving unit 190 may vibrate the gas supply pipe 131 by applying ultrasonic waves to the gas supply pipe 131 .

[0135] Furthermore, the moving unit 190 may translate the gas supply pipe 131. When the gas supply pipe 131 translates, the raised portion KI protrudes from the gas supply pipe 131 into the stored treatment liquid L1, and therefore receives pressure from the stored treatment liquid L1 in the direction opposite to the movement direction of the gas supply pipe 131. As a result, the growing raised portion KI can be sheared early by the pressure from the stored treatment liquid L1, and therefore the size of the gas bubble KA can be suppressed.

[0136] The pressure that the raised portion KI receives from the stored treatment liquid L1 when the gas supply pipe 131 translates is a sixth example of the shear force of the present invention. Note that the direction in which the gas supply pipe 131 translates is not particularly limited.

[0137] Furthermore, the moving unit 190 may rotate the gas supply pipe 131 around the axis of the gas supply pipe 131. When the gas supply pipe 131 rotates, the raised portion KI protrudes from the gas supply pipe 131 into the stored treatment liquid L1, and therefore receives pressure from the stored treatment liquid L1 in the direction opposite to the rotation direction of the gas supply pipe 131. As a result, the growing raised portion KI can be sheared early by the pressure from the stored treatment liquid L1, and therefore the size of the gas bubble KA can be suppressed.

[0138] The pressure that the raised portion KI receives from the stored treatment liquid L1 when the gas supply pipe 131 rotates is a seventh example of a shear force of the present invention.

[0139] The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 13(b)). However, the present invention is not limited to the above embodiments, and can be implemented in various forms without departing from the gist of the present invention (for example, (1) to (6)). In addition, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be deleted from all components shown in the embodiments. The drawings are mainly schematic illustrations of each component for ease of understanding, and the number of each component shown may differ from the actual number due to the convenience of drawing. In addition, each component shown in the above embodiments is an example, is not particularly limited, and various modifications are possible without substantially departing from the effects of the present invention.

[0140] (1) In the first to fifth embodiments, the control unit 140 controls the magnitude of each of the pressures of the first to fourth liquid flows R1 to R4 imparted to the gas supply pipe 131 by adjusting the opening degree of the pipe 161 using the adjustment valve 165.

[0141] The control unit 140 may keep the magnitude of each of the pressures of the first liquid flow R1 to the fourth liquid flow R4 constant by keeping the opening of the pipe 161 constant. Furthermore, the control unit 140 may periodically change the magnitude of each of the pressures of the first liquid flow R1 to the fourth liquid flow R4 by changing the opening of the pipe 161 at predetermined time intervals. In other words, the control unit 140 may vary the magnitude of each of the pressures of the first liquid flow R1 to the fourth liquid flow R4.

[0142] (2) In the first to sixth embodiments, the portion of the gas supply pipe 131 (see FIG. 4) where the bubble discharge port M is formed may be subjected to a hydrophobic treatment, for example, by fluorine coating. As a result, the bubbles KA can be easily broken down, and the size of the bubbles KA can be effectively prevented from increasing. The hydrophobic treatment may be applied not only to the portion of the gas supply pipe 131 where the bubble discharge port M is formed, but also to the entire gas supply pipe 131.

[0143] (3) In the first to sixth embodiments, the air bubble discharge port M opens upward. However, the present invention is not limited to this.

[0144] A first modified example of the air bubble discharge port M will be described with reference to Fig. 14. Fig. 14 is a diagram showing the first modified example of the air bubble discharge port M.

[0145] 14, in the first modified example, the air bubble discharge port M opens sideways. The sideways direction is a direction parallel to the horizontal direction (X-axis direction). Therefore, when the raised portion KI of the gas K tries to rise from the air bubble discharge port M, it comes into contact with the upper end of the air bubble discharge port M, so that the raised portion KI can be effectively sheared by the upper end of the air bubble discharge port M. As a result, it is possible to suppress the size of the air bubble KA from increasing.

[0146] (4) A second modified example of the air bubble discharge port M will be described with reference to Fig. 15. Fig. 15 is a diagram showing the second modified example of the air bubble discharge port M.

[0147] 15, in the second modified example, the opening area of ​​the bubble discharge port M becomes smaller toward the outside of the gas supply pipe 131. The second modified example of the bubble discharge port M will be described in detail below.

[0148] The gas supply pipe 131 has an inner surface 131b and an outer surface 131c. The inner surface 131b faces the interior 131a of the gas supply pipe 131. The outer surface 131c faces the interior of the gas supply pipe 131.

[0149] The bubble discharge port M has an outer opening Ma and an inner opening Mb. The outer opening Ma is formed on the outer surface 131c. The inner opening Mb is formed on the inner surface 131b. The inner opening Mb communicates with the outer opening Ma.

[0150] The opening area V1 of the outer opening Ma is smaller than the opening area V2 of the inner opening Mb (V1 < V2). As a result, as the bubbles flow from the inner opening Mb towards the outer opening Ma, the opening area of the bubble discharge port M decreases, so that the growth of the bubbles KA can be effectively suppressed. The opening area is the cross-sectional area of the bubble discharge port M perpendicular to the direction from the inner opening Mb towards the outer opening Ma.

[0151] Incidentally, as the bubbles flow from the inner opening Mb towards the outer opening Ma, the opening area of the bubble discharge port M may gradually decrease. Also, as the bubbles flow from the inner opening Mb towards the outer opening Ma, the opening area of the bubble discharge port M may decrease stepwise.

[0152] (5) With reference to FIG. 16, a modified example of the gas supply pipe 131 will be described. FIG. 16 is a diagram showing a modified example of the gas supply pipe 131.

[0153] The modified example of the gas supply pipe 131 shown in FIG. 16 has a double-pipe structure. Hereinafter, the modified example of the gas supply pipe 131 will be described in detail.

[0154] The gas supply pipe 131 has an outer pipe 131d and an inner pipe 131e. Each of the outer pipe 131d and the inner pipe 131e is a tubular member. The outer diameter of the outer pipe 131d is larger than the outer diameter of the inner pipe 131e. The inner pipe 131e is disposed inside the outer pipe 131d. Gas K flows through the interior 131f of the inner pipe 131e.

[0155] The bubble discharge port M has a first opening MA and a second opening MB. The first opening MA is formed in the outer pipe 131d and communicates the inside and outside of the outer pipe 131d. The second opening MB is formed in the inner pipe 131e and communicates the inside 131f of the inner pipe 131e and the outside. The first opening MA and the second opening MB are opened in the same direction. The opening area V3 of the first opening MA is approximately the same as the opening area V4 of the second opening MB (V3 ≒ V4). As a result, the first opening MA and the second opening MB can apply pressure doubly to the raised portion KI (see FIG. 6(b)), so that the growth of the raised portion KI can be suppressed. The opening area V3 of the first opening MA may be smaller than the opening area V4 of the second opening MB (V3 <V4)。

[0156] (6) In the first to sixth embodiments, the gas supply pipe 131, which is the bubble supply unit 130, contains quartz. However, the present invention is not limited to this. In the first to sixth embodiments, the gas supply pipe 131 may contain PEEK (polyether ether ketone). That is, in the first to sixth embodiments, the gas supply pipe 131 made of PEEK may be used.

[0157] The reason why the gas supply pipe 131 made of PEEK is used in the substrate processing apparatus 100 will be described below with reference to FIGS.

[0158] 1 and 4, when the substrate W is processed by the substrate processing apparatus 100, the gas supply pipe 131 is immersed in a high-temperature (e.g., about 160° C.) processing liquid L (phosphoric acid solution) (see FIG. 1). However, when the gas supply pipe 131 is made of quartz, if the gas supply pipe 131 is used for a long period of time (e.g., six months to one year), the diameter of the bubble discharge port M may increase due to the gas supply pipe 131 being immersed in the high-temperature processing liquid L for a long period of time. In this case, bubbles KA are discharged from the bubble discharge port M with an enlarged diameter among the multiple bubble discharge ports M, which may cause variations in the discharge of bubbles KA from the multiple bubble discharge ports M, and the processing capacity of the substrate W by the substrate processing apparatus 100 may decrease. Therefore, the gas supply pipe 131 made of quartz has been replaced about every six months to one year.

[0159] In order to prevent the diameter of the bubble discharge port M from expanding and to extend the replacement life of the gas supply pipe 131, the inventors of the present application decided to use a resin that can withstand immersion in the processing liquid L for a long period of time rather than quartz as the material for the gas supply pipe 131. The inventors of the present application also chose PEEK, PFA (tetrafluoroethylene-perfluoroalkylvinylether copolymer), and PTFE (polytetrafluoroethylene) as candidates for the resin material for the gas supply pipe 131. The inventors of the present application then verified which of PEEK, PFA, and PTFE was the most suitable material for the gas supply pipe 131.

[0160] In the gas supply pipe 131 used in the verification, the inner diameter of the bubble discharge port M is 0.2 mm. In addition, the outer diameter of the gas supply pipe 131 used in the verification is 8 mm, and the inner diameter is 4 mm. In addition, the length of the gas supply pipe 131 used in the verification is 400 mm. Note that the dimensions of the gas supply pipe 131 are not limited to these, and for example, the outer diameter of the gas supply pipe 131 may be 6 mm or more and 12 mm or less, and the inner diameter may be 2 mm or more and 10 mm or less.

[0161] Further, in the processing liquid supply pipe 167, the inner diameter of the processing liquid discharge port N is, for example, 1 mm. From the processing liquid discharge port N, the processing liquid L is discharged, not the air bubbles KA. Therefore, the processing liquid supply pipe 167 does not have a problem caused by the variation of the air bubbles KA, as in the gas supply pipe 131, and the replacement life of the processing liquid supply pipe 167 (about several years) is longer than the replacement life of the gas supply pipe 131 (about six months to one year). Therefore, since the gas supply pipe 131 is replaced more frequently than the processing liquid supply pipe 167, the present inventors set it as an object to extend the replacement life of the gas supply pipe 131. And, in order to solve the object, the present inventors devised a material for the gas supply pipe 131.

[0162] Below, the results of the comparison between PEEK, PFA, and PTFE will be described with reference to Fig. 17. Fig. 17 is Table H showing the results of the comparison between PEEK, PFA, and PTFE. Note that Table H in Fig. 17 also lists information about quartz for reference.

[0163] As shown in Table H of Fig. 17, the heat-resistant temperature of PEEK, PFA, and PTFE is approximately the same. Therefore, there is no difference in the heat-resistant temperature between the various gas supply pipes (the PEEK gas supply pipe 131, the PFA gas supply pipe 131, and the PTFE gas supply pipe 131).

[0164] As shown in Table H, PEEK has the lowest linear expansion coefficient among various resin materials (PEEK, PFA, and PTFE). Therefore, among various gas supply pipes, the gas supply pipe 131 made of PEEK is the least susceptible to thermal expansion, and is therefore advantageous in that it is the least susceptible to positional displacement due to thermal expansion within the inner tank 112.

[0165] As shown in Table H, PEEK is the hardest among various resin materials in terms of hardness. Therefore, among various gas supply pipes, the gas supply pipe 131 made of PEEK is advantageous in that it is the least likely to deform even when pressure is applied from the outside.

[0166] As shown in Table H, among various resin materials, PEEK has the highest thermal deformation temperature. Therefore, among various gas supply pipes, the gas supply pipe 131 made of PEEK is advantageous in that it is the least susceptible to thermal deformation.

[0167] Table H lists information on the thermal deformation of PEEK when it is heated to 152° C. under a pressure of 1.8 MPa. However, when the substrate W is processed by the substrate processing apparatus 100, a processing liquid L at about 160° C. is used, but a high pressure of 1.8 MPa is not usually applied to the gas supply pipe 131. As a result, when the substrate W is processed by the substrate processing apparatus 100, even if a processing liquid L at about 160° C. is used, the gas supply pipe 131 made of PEEK is prevented from being thermally deformed.

[0168] The inventors of the present application also discovered that the breakage of the bubbles KA discharged from the bubble discharge port M is affected by the wettability (contact angle) of the surface of the gas supply pipe 131. Specifically, the inventors of the present application discovered that the smaller the wettability of the surface of the gas supply pipe 131 (the larger the contact angle), the better the breakage of the bubbles KA, and small bubbles KA can be discharged from the bubble discharge port M. The inventors of the present application also discovered that, among various gas supply pipes, the PEEK gas supply pipe 131 has the smallest surface wettability, and therefore small bubbles KA can be effectively discharged from the bubble discharge port M of the PEEK gas supply pipe 131.

[0169] The inventors of the present application have confirmed that, by comprehensively considering the above-mentioned linear expansion coefficient, hardness, heat distortion temperature, and wettability, it is most advantageous to use the PEEK gas supply pipe 131 among various gas supply pipes. As a result, the PEEK gas supply pipe 131 is used in the substrate processing apparatus 100.

[0170] As described above, by using the gas supply pipe 131 made of PEEK in the substrate processing apparatus 100, the durability of the gas supply pipe 131 against the processing liquid L can be improved, and the replacement life of the gas supply pipe 131 can be extended. Examples of features that can be extracted from this specification and the accompanying drawings are listed below. 1. A substrate processing apparatus for processing a substrate by immersing the substrate in a stored processing liquid, the stored processing liquid being a processing liquid stored in a storage section, an air bubble supplying unit for supplying air bubbles to the stored treatment liquid; a liquid flow generating unit for generating a liquid flow of the stored treatment liquid with respect to the air bubble supply unit; Equipped with The bubble supply unit has a first pipe portion through which a gas flows, The first pipe portion is formed with a bubble discharge port disposed in the stored treatment liquid, the bubble outlet releases bubbles of the gas into the stored treatment liquid; the gas bubbles come into contact with the surface of the substrate when rising through the stored processing liquid; the liquid flow generating unit has a pair of second pipes through which the treatment liquid flows, The pair of second pipe parts are disposed in the stored treatment liquid at positions sandwiching the first pipe part, Each of the pair of second pipe portions is formed with a treatment liquid outlet that is disposed within the stored treatment liquid, the pair of treatment liquid discharge ports generate a pair of the liquid flows by discharging the treatment liquid flowing through the second pipe portion into the stored treatment liquid, The pair of liquid flows along an outer periphery of the first pipe portion so as to sandwich the first pipe portion. 2. The substrate processing apparatus according to item 1, wherein the pair of second pipe sections are disposed below the first pipe section with a gap between them. 3. The substrate processing apparatus according to claim 1 or 2, wherein a hydrophobic treatment is performed on a portion of the first pipe section where the bubble discharge port is formed. 4. The substrate processing apparatus according to any one of items 1 to 3, wherein the processing liquid discharge port is disposed to the side of the air bubble discharge port when viewed from above. 5. A substrate processing apparatus according to any one of items 1 to 4, wherein the processing liquid outlet is directed toward the bottom of the storage section, is reflected at the bottom, and then is directed toward the bubble outlet. 6. A substrate processing apparatus for processing a substrate by immersing the substrate in a stored processing liquid, which is a processing liquid stored in a storage section, an air bubble supplying unit for supplying air bubbles to the stored treatment liquid; a liquid flow generating unit for generating a liquid flow of the stored treatment liquid with respect to the air bubble supply unit; Equipped with The bubble supply unit has a first pipe portion through which a gas flows, The first pipe portion is formed with a bubble discharge port disposed in the stored treatment liquid, the bubble outlet releases bubbles of the gas into the stored treatment liquid; the gas bubbles come into contact with the surface of the substrate when rising through the stored processing liquid; the liquid flow generating unit has a second pipe portion through which the treatment liquid flows, the second pipe portion is located below the first pipe portion within the stored treatment liquid, the second pipe portion is formed with a treatment liquid outlet port disposed within the stored treatment liquid, The processing liquid discharge port is disposed directly below the bubble discharge port, and by discharging the processing liquid flowing through the second pipe portion into the stored processing liquid, a pair of liquid flows is generated that flow along the outer periphery of the first pipe portion while sandwiching the first pipe portion. 7. The first tube portion is An inner surface facing the inside of the first pipe portion; an outer surface facing the outside of the first pipe portion; having The bubble outlet is an outer opening formed in the outer surface; an inner opening formed on the inner surface and communicating with the outer opening; having 7. The substrate processing apparatus according to any one of items 1 to 6, wherein an opening area of ​​the outer opening is smaller than an opening area of ​​the inner opening. 8. The substrate processing apparatus according to item 7, wherein the bubble discharge port opens upward. 9. The first pipe portion has an outer pipe and an inner pipe disposed inside the outer pipe, The bubble outlet is a first opening formed in the outer pipe and communicating between an inside and an outside of the outer pipe; a second opening formed in the inner pipe and communicating the inside and the outside of the inner pipe; having 7. The substrate processing apparatus according to claim 1, wherein the first opening and the second opening face in the same direction. 10. A substrate processing apparatus for processing a substrate by immersing the substrate in a stored processing liquid, which is a processing liquid stored in a storage section, an air bubble supplying unit for supplying air bubbles to the stored treatment liquid; a moving unit that moves the air bubble supply unit relative to the storage unit; Equipped with The bubble supply unit has a pipe through which a gas flows, the pipe portion is formed with a bubble discharge port disposed in the stored treatment liquid, the bubble outlet releases bubbles of the gas into the stored treatment liquid; the gas bubbles come into contact with the surface of the substrate when rising through the stored processing liquid; The moving unit translates the pipe portion within the stored processing liquid. 11. A substrate processing apparatus for processing a substrate by immersing the substrate in a stored processing liquid, the stored processing liquid being a processing liquid stored in a storage section, an air bubble supplying unit for supplying air bubbles to the stored treatment liquid; a moving unit that moves the air bubble supply unit relative to the storage unit; Equipped with The bubble supply unit has a pipe through which a gas flows, the pipe portion is formed with a bubble discharge port disposed in the stored treatment liquid, the bubble outlet releases bubbles of the gas into the stored treatment liquid; the gas bubbles come into contact with the surface of the substrate when rising through the stored processing liquid; The moving unit rotates the pipe unit about an axis of the pipe unit. 12. The substrate processing apparatus according to any one of claims 1 to 11, wherein the bubble supplying unit contains polyether ether ketone. 13. A substrate processing method for processing a substrate by immersing the substrate in a stored processing liquid, which is a processing liquid stored in a storage section, comprising: A step of disposing an air bubble discharge port formed in a first pipe portion in the stored treatment liquid; flowing a gas through the first pipe section; a step of discharging the treatment liquid from treatment liquid discharge ports formed in a pair of second pipes arranged at positions sandwiching the first pipe in the stored treatment liquid, thereby generating a pair of liquid flows that flow along an outer periphery of the first pipe so as to sandwich the first pipe; applying a shearing force to shear a protruding portion of the gas protruding from the air bubble discharge port into the stored treatment liquid from the gas present inside the first pipe portion, thereby discharging bubbles of the gas into the stored treatment liquid; Equipped with The shear force is applied by the pair of liquid streams, The gas bubbles come into contact with the surface of the substrate when rising in the stored processing liquid. 14. A substrate processing method for processing a substrate by immersing the substrate in a stored processing liquid, which is a processing liquid stored in a storage section, comprising: A step of disposing an air bubble discharge port formed in a first pipe portion in the stored treatment liquid; flowing a gas through the first pipe section; discharging the treatment liquid from a treatment liquid discharge port formed in a second pipe section disposed below the first pipe section in the stored treatment liquid to generate a pair of liquid flows that flow along an outer periphery of the first pipe section so as to sandwich the first pipe section; applying a shearing force to shear a protruding portion of the gas protruding from the air bubble discharge port into the stored treatment liquid from the gas present inside the first pipe portion, thereby discharging bubbles of the gas into the stored treatment liquid; Equipped with the treatment liquid outlet is disposed directly below the air bubble outlet, The shear force is applied by the pair of liquid streams, The gas bubbles come into contact with the surface of the substrate when rising in the stored processing liquid. 15. A substrate processing method for processing a substrate by immersing the substrate in a stored processing liquid, which is a processing liquid stored in a storage section, comprising: A step of disposing an air bubble discharge port formed in a pipe portion in the stored treatment liquid; flowing a gas through the tube; applying a shearing force to shear a protruding portion of the gas protruding from the bubble discharge port into the stored treatment liquid from the gas present inside the tubular portion, thereby discharging bubbles of the gas into the stored treatment liquid; Equipped with In the step of releasing the gas bubbles, the shear force is applied by translating the pipe part in the stored treatment liquid; The gas bubbles come into contact with the surface of the substrate when rising in the stored processing liquid. 16. A substrate processing method for processing a substrate by immersing the substrate in a stored processing liquid, which is a processing liquid stored in a storage section, comprising: A step of disposing an air bubble discharge port formed in a pipe portion in the stored treatment liquid; flowing a gas through the tube; applying a shearing force to shear a protruding portion of the gas protruding from the bubble discharge port into the stored treatment liquid from the gas present inside the tubular portion, thereby discharging bubbles of the gas into the stored treatment liquid; Equipped with In the step of releasing the gas bubbles, the shear force is applied by rotating the tube portion about an axis of the tube portion; The gas bubbles come into contact with the surface of the substrate when rising in the stored processing liquid. [Industrial Applicability]

[0171] The present invention can be used in the field of substrate processing apparatuses and substrate processing methods. [Explanation of symbols]

[0172] 100 Substrate processing apparatus 112 Inner tank (storage section) 130 Air bubble supply section 160 Circulation section (liquid flow generation section) KA Bubbles L Processing liquid L1 Retention treatment liquid R1 1st liquid flow (liquid flow) R2 2nd liquid flow (liquid flow) R3 3rd liquid flow (liquid flow) R4 4th liquid flow (liquid flow) W substrate

Claims

1. A substrate processing apparatus for processing a substrate by immersing the substrate in a stored processing liquid, the stored processing liquid being a processing liquid stored in a storage portion, A pipe portion for supplying air bubbles to the stored treatment liquid; a liquid flow generating unit for generating a liquid flow of the stored treatment liquid in the pipe portion; Equipped with the tube portion includes polyetheretherketone, The inner diameter of the tube portion is 2 mm or more and 10 mm or less, the pipe portion includes an air bubble outlet for supplying air bubbles that come into contact with the surface of the substrate when rising in the stored processing liquid, The liquid flow generating unit is configured to generate a liquid flow of the stored processing liquid around the bubble discharge port, and to apply a shear force to shear a protruding portion of the gas flowing through the pipe portion, the protruding portion of the gas flowing through the pipe portion, the protruding portion of the gas flowing through the pipe portion, the protruding portion of the gas flowing through the pipe portion.

2. The substrate processing apparatus according to claim 1 , wherein the outer diameter of the tubular portion is not less than 6 mm and not more than 12 mm.

3. 3. The substrate processing apparatus according to claim 1, wherein the stored processing liquid is an aqueous phosphoric acid solution.

4. The bubble outlet opens sideways, The substrate processing apparatus according to claim 1 , wherein the lateral direction is a direction parallel to a horizontal direction.

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