Process for forming a handle substrate for a composite structure intended for RF applications

JP7634009B2Active Publication Date: 2025-02-20SOITEC SA
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Patent Information

Application Number
JP2022528160
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2019-12-05
Filing Date
2020-11-25
Publication Date
2025-02-20
Estimated Expiration
2040-11-25

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Abstract

The present invention provides a handle substrate (100) for a composite structure, comprising: a base substrate (12) consisting of an epitaxial silicon layer (2) on a single crystal silicon wafer (1) obtained by the Czochralski pulling method and having a resistivity of 10 to 500 Ω·cm, wherein the epitaxial silicon layer (2) exhibits a resistivity greater than 2000 Ω·cm and a thickness ranging from 2 to 100 micrometers; a passivation layer (3) on the epitaxial silicon layer (2) and in contact with the epitaxial silicon layer (2), the passivation layer (3) being amorphous or polycrystalline; a charge trapping layer (4) on and in contact with the passivation layer (3); The present invention relates to a handle substrate (100) comprising:
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Citation Information

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