Laser device and method for manufacturing electronic device

Abstract

A laser apparatus according to one aspect of the present disclosure comprises an oscillator that outputs pulsed laser light in burst form, a wavelength monitor that measures the center wavelength of the pulsed laser light, and a processor. The oscillator comprises: a chamber having a discharge electrode that applies voltage to laser gas inside the chamber; an optical element that is disposed in the optical path of the pulsed laser light; a drive mechanism that drives a rotating stage on which the optical element is placed; a grating to which pulsed laser light transmitted or reflected by the optical element is made incident; and an output coupling mirror that emits pulsed laser light. The processor periodically changes the target value for the center wavelength between a first target value and a second target value and outputs a drive command to the drive mechanism to change the angle of incidence on the grating, and thereby controls the center wavelength. The processor corrects the drive command value of the drive mechanism when outputting the pulsed laser light for a subsequent cycle having the same target value on the basis of the deviation between a measured value for the center wavelength and the target value. .

Description

[Technical field]

[0001] The present disclosure relates to a method for manufacturing a laser apparatus and an electronic device. [Background technology]

[0002] In recent years, in semiconductor exposure devices, there is a demand for improved resolution as semiconductor integrated circuits become finer and more highly integrated. For this reason, the wavelength of light emitted from exposure light sources is becoming shorter. For example, as gas laser devices for exposure, KrF excimer laser devices that output laser light with a wavelength of about 248 nm and ArF excimer laser devices that output laser light with a wavelength of about 193 nm are used.

[0003] The spectral line width of the spontaneous oscillation light of the KrF excimer laser device and the ArF excimer laser device is as wide as 350 to 400 pm. Therefore, if a projection lens is made of a material that transmits ultraviolet light such as KrF and ArF laser light, chromatic aberration may occur. As a result, the resolution may decrease. Therefore, it is necessary to narrow the spectral line width of the laser light output from the gas laser device to a level where the chromatic aberration can be ignored. Therefore, in order to narrow the spectral line width, a line narrow module (LNM) including a line narrowing element (such as an etalon or grating) may be provided in the laser resonator of the gas laser device. Hereinafter, a gas laser device in which the spectral line width is narrowed is referred to as a line narrowing gas laser device. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Summary of U.S. Patent Application Publication No. 2016 / 0299441

[0005] a wavelength monitor configured to measure a central wavelength of the pulsed laser beam output from the oscillator; and a processor. The oscillator includes a chamber having a discharge electrode configured to apply a voltage to a laser gas inside the chamber, an optical element arranged in an optical path of the pulsed laser beam, a rotating stage on which the optical element is mounted, a driving mechanism configured to drive the rotating stage to rotate the optical element, a grating onto which the pulsed laser beam transmitted through or reflected by the optical element is incident, and an output coupling mirror configured to output the pulsed laser beam. The processor periodically changes a target value of the central wavelength of the pulsed laser beam between a first target value and a second target value different from the first target value, and controls the central wavelength by outputting a drive command to the driving mechanism to change the angle of incidence of the pulsed laser beam on the grating based on the target value and a measurement value of the central wavelength measured by the wavelength monitor. The processor corrects a drive command value of the driving mechanism when outputting a pulsed laser beam of a subsequent period having the same target value based on a deviation between the measurement value of the central wavelength and the target value.

[0006] A manufacturing method for an electronic device according to another aspect of the present disclosure includes an oscillator that outputs a burst-like pulsed laser beam, a wavelength monitor that measures a central wavelength of the pulsed laser beam output from the oscillator, and a processor, wherein the oscillator includes a chamber having a discharge electrode that applies a voltage to a laser gas inside, an optical element arranged in an optical path of the pulsed laser beam, a rotating stage on which the optical element is placed, a drive mechanism that drives the rotating stage to rotate the optical element, a grating on which the pulsed laser beam transmitted through or reflected by the optical element is incident, and an output coupling mirror that emits the pulsed laser beam, and the processor measures the central wavelength of the pulsed laser beam. The method includes: periodically changing the target value between a first target value and a second target value different from the first target value; outputting a drive command to a drive mechanism to change the angle of incidence of the pulsed laser light on the grating based on the target value and a measurement value of the central wavelength measured by a wavelength monitor, thereby controlling the central wavelength; and correcting a drive command value for the drive mechanism when outputting pulsed laser light of a subsequent period having the same target value based on a deviation between the measurement value of the central wavelength and the target value; generating laser light by a laser device, outputting the laser light to an exposure device, and exposing the laser light onto a photosensitive substrate in the exposure device to manufacture an electronic device. [Brief description of the drawings]

[0007] Some embodiments of the present disclosure will now be described, by way of example only, with reference to the accompanying drawings. [Figure 1] FIG. 1 shows a schematic diagram of an exemplary laser device configuration. [Diagram 2] FIG. 2 is a graph showing an example of a periodically changed wavelength command and an actual wavelength of a pulsed laser beam output by wavelength control according to a comparative example. [Diagram 3] FIG. 3 is a graph showing an example of a target output spectrum and an actually output spectrum. [Figure 4] FIG. 4 is a timing chart showing an example of the operation of the laser device according to the first embodiment. [Diagram 5]FIG. 5 is a flowchart showing an example of control in the laser device according to the first embodiment. [Figure 6] FIG. 6 is a control block diagram of the laser device according to the first embodiment. [Figure 7] FIG. 7 is a timing chart showing an example of the operation of the laser device according to the second embodiment. [Figure 8] FIG. 8 is a flowchart showing an example of control in the laser device according to the second embodiment. [Figure 9] FIG. 9 shows a schematic configuration of an exposure apparatus. Embodiment

[0008] -table of contents- 1. Overview of the laser device 1.1 Configuration 1.2 Operation 2. Challenges 3. Embodiment 1 3.1 Configuration 3.2 Operation 3.3 Explanation of the flow chart showing the control example 3.4 Explanation of the control block diagram 3.5 Actions and Effects 4. Embodiment 2 4.1 Configuration 4.2 Operation 4.3 Explanation of the flow chart showing the control example 4.4 Actions and Effects 5. Manufacturing methods for electronic devices 6.Other Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below show some examples of the present disclosure, and do not limit the contents of the present disclosure. Furthermore, not all of the configurations and operations described in each embodiment are necessarily essential as the configurations and operations of the present disclosure. Note that the same components are given the same reference symbols, and duplicated explanations will be omitted.

[0009] 1. Overview of the laser device 1.1 Configuration 1 shows a schematic configuration of an exemplary laser device 11. The laser device 11 is an excimer laser device equipped with a laser chamber 12 in which a laser gas serving as a laser medium is sealed. A front window 17 and a rear window 19 that transmit a pulsed laser beam 21 are disposed at both ends of the laser chamber 12 via holders (not shown).

[0010] A pair of discharge electrodes 14, 15 are disposed inside the laser chamber 12, facing each other in a direction perpendicular to the plane of the paper in Fig. 1. A high voltage is applied between the discharge electrodes 14, 15 from a high-voltage power supply 23 to generate a pulsed discharge to excite the laser gas, thereby generating a pulsed laser beam 21 with a frequency of, for example, several kHz to several tens of kHz.

[0011] The generated pulsed laser beam 21 travels, for example, toward the rear of the laser chamber 12 (to the left in FIG. 1) and enters a line narrowing unit 30 that narrows the line of the pulsed laser beam 21. The line narrowing unit 30 is surrounded by a line narrowing box 31, and includes therein, as optical elements, prisms 32, 32, a wavelength selection mirror 34, a grating 33, and the like.

[0012] A purge gas supply port 35 is provided on the wall of the line narrowing box 31. A purge gas 45 having low reactivity, such as high purity nitrogen or a dry rare gas, is introduced into the line narrowing box 31 from the purge gas supply port 35.

[0013] The pulsed laser light 21 incident on the line narrowing unit 30 is expanded by the prisms 32, 32, reflected by the wavelength selection mirror 34, and incident on the grating 33, which is a line narrowing optical element. The grating 33 reflects only the pulsed laser light 21 having a center wavelength λc determined by the incident angle φ due to diffraction. That is, the grating 33 is arranged in a Littrow arrangement so that the diffracted light having the center wavelength λc corresponding to the incident angle φ of the incident pulsed laser light 21 returns to the laser chamber 12.

[0014] The wavelength selection mirror 34 is mounted on a movable holder 36 that is rotatable within a horizontal plane (within a plane parallel to the paper surface in FIG. 1). The wavelength selection mirror 34 is disposed in the optical path between the prism 32 and the grating 33, and by rotating the movable holder 36 to rotate the wavelength selection mirror 34, the incidence angle φ of the pulsed laser light 21 incident on the grating 33 changes. This changes the central wavelength λc of the pulsed laser light 21 diffracted by the grating 33. In FIG. 1, reference numeral 20 denotes the laser optical axis of the pulsed laser light 21.

[0015] The narrowed-band pulsed laser beam 21 is amplified by the discharge between the discharge electrodes 14, 15 while traveling back and forth several times between the grating 33 in the narrowed-band unit 30 and the output coupling mirror 16, which partially reflects the pulsed laser beam 21. The pulsed laser beam 21 then partially passes through the output coupling mirror 16 and is emitted forward (to the right in FIG. 1) as pulsed laser beam 21, and enters the exposure device 25. A portion of the emitted pulsed laser beam 21 is extracted downward in FIG. 1 by the beam splitter 22, and its central wavelength λc is monitored by the wavelength monitor 37.

[0016] The movable holder 36 includes a rectangular mirror holder 38 to which the wavelength selection mirror 34 is fixed. The mirror holder 38 is attracted to the line narrowing box 31 by the biasing forces of a tension spring and a leaf spring (not shown).

[0017] Among the four corners of the mirror holder 38, the first and second corners are pressed from the band narrowing box 31 by a manual micrometer and a support member, not shown, respectively. A piezoelectric element unit 41 is attached to the third corner of the mirror holder 38. The tip of the piezoelectric element unit 41 contacts a ball screw unit, not shown, by the biasing force of a tension spring and a leaf spring, not shown, and presses the stepping motor unit 40. The piezoelectric element unit 41 is a fine movement drive mechanism including a piezoelectric element. The stepping motor unit 40 is a coarse movement drive mechanism including a stepping motor. Hereinafter, the piezoelectric element may be simply referred to as "piezo" or "PZT".

[0018] The stepping motor unit 40 and the piezoelectric element unit 41 are both electrically connected to the processor 29. The processor 29 functions as a laser controller that controls the entire laser device 11. The processor 29 in the present disclosure is a processing device including a storage device in which a control program is stored and a CPU (Central Processing Unit) that executes the control program. The processor 29 is specially configured or programmed to execute various processes included in the present disclosure.

[0019] The stepping motor unit 40 rotates the motor shaft by a predetermined amount according to the number of pulses of the pulse signal received from the processor 29. The rear end of a ball screw unit with a precisely machined screw thread is attached to the tip of the motor shaft via a coupling. The ball screw unit performs smooth linear motion in the forward and backward directions while rotating, due to a guide.

[0020] The tip of the ball screw unit is precisely machined into a flat surface perpendicular to its longitudinal direction, and the tip of the piezoelectric element unit 41, precisely machined into a spherical surface, abuts against this flat surface. Therefore, when the ball screw unit moves back and forth while rotating, the piezoelectric element unit 41 moves back and forth without rotating. The rear end of the piezoelectric element unit 41 is fixed to an ultraviolet light cover (not shown) that is fixed to the mirror holder 38.

[0021] The wiring of the piezoelectric element unit 41 passes through the inside of the ultraviolet ray cover, reaches the outside of the line narrowing box 31 through an introduction hole (not shown), and is connected to the processor 29. The piezoelectric element unit 41 expands and contracts in the front-rear direction by a length according to the magnitude of the voltage V applied through the wiring.

[0022] The neutral position is a position that is approximately half the full stroke of the piezoelectric element unit 41. The voltage V that extends the piezoelectric element unit 41 to the neutral position is called the neutral voltage V0. The processor 29 constantly applies the neutral voltage V0 to the piezoelectric element unit 41. This keeps the piezoelectric element unit 41 in the neutral position as its initial position.

[0023] The processor 29 outputs a command to the movable holder 36 to extend or retract the stepping motor unit 40 or the piezoelectric element unit 41, thereby pushing or pulling the third corner of the mirror holder 38 via the ultraviolet ray cover. This causes the wavelength selection mirror 34 to rotate, changing the incidence angle φ and changing the central wavelength λc of the pulsed laser light 21.

[0024] At this time, the processor 29 performs wavelength control based on the central wavelength λc monitored by the wavelength monitor 37 so that the wavelength deviation, which is the difference between the central wavelength λc and the target wavelength, falls within a predetermined allowable range.

[0025] The processor 29 also controls the pulse energy of the pulsed laser light 21 by outputting a command to the high voltage power supply 23. Furthermore, the processor 29 communicates with the exposure device 25, and performs laser oscillation based on an oscillation command signal from the exposure device 25. The processor 29 may also output an oscillation command signal based on its own judgment and perform laser oscillation.

[0026] An oscillator that outputs pulsed laser light 21 is configured including a laser chamber 12 having discharge electrodes 14 and 15, a line narrowing unit 30, a piezoelectric element unit 41, and an output coupling mirror 16.

[0027] 1.2 Operation It is known that exposure is performed with a plurality of wavelengths in order to increase the focal depth when the resist film is irradiated with the pulsed laser light 21 by the exposure device 25. By increasing the focal depth, it is possible to maintain the imaging performance in the thickness direction of the resist film even when a resist film with a large thickness is exposed.

[0028] As a means for exposing at multiple wavelengths, it is known to periodically switch the central wavelength of the pulsed laser light 21 generated by the laser device 11 between two wavelengths, for example, a long wavelength and a short wavelength (see FIG. 2). An example of the operation when wavelengths λ1 and λ2 are set as target wavelengths (target values ​​of the central wavelengths) and these two wavelengths are periodically switched is as follows.

[0029] [Step 1] Processor 29 receives two target wavelengths λ1 and λ2 and a period T for controlling the wavelengths from exposure tool 25. Period T is represented by the number of pulses N for one period. The number of pulses N representing period T may be the number of pulses irradiated to the same location of the resist film on the wafer, that is, the number of N slit pulses.

[0030] [Step 2] The processor 29 drives the piezoelectric element unit 41 or the stepping motor unit 40 to rotate the wavelength selection mirror 34 and change the incidence angle φ of the pulsed laser light 21 incident on the grating 33 so as to achieve the received target wavelength λ1.

[0031] [Step 3] A portion of the band-narrowed pulsed laser light 21 is extracted by the beam splitter 22, and the wavelength is measured by the wavelength monitor 37.

[0032] [Step 4] If the measured wavelength (center wavelength λc) deviates from the target wavelength λ1, the processor 29 drives the piezoelectric element unit 41, which has excellent high-speed response, to adjust the attitude of the wavelength selection mirror 34 so that the center wavelength λc approaches the target wavelength λ1. The feedback control in step 4 is performed for each pulse.

[0033] [Step 5] When it is time to switch the wavelength, the processor 29 drives the piezoelectric element unit 41 to rotate the wavelength selection mirror 34 and change the incidence angle φ of the pulsed laser light 21 incident on the grating 33 so that the central wavelength λc of the pulsed laser light 21 becomes the target wavelength λ2.

[0034] [Step 6] A portion of the pulsed laser light 21 generated by the operation in step 5 is extracted by the beam splitter 22, and the wavelength is measured by the wavelength monitor 37.

[0035] [Step 7] If the measured wavelength deviates from the target wavelength λ2, the processor 29 drives the piezoelectric element unit 41 to adjust the attitude of the wavelength selection mirror 34 so that the central wavelength λc approaches the target wavelength λ2. The feedback control in step 7 is also performed for each pulse.

[0036] [Step 8] When the time comes to switch the wavelength, the processor 29 drives the piezoelectric element unit 41 to rotate the wavelength selection mirror 34 and change the incidence angle φ of the pulsed laser light 21 incident on the grating 33 so as to achieve the target wavelength λ1.

[0037] 1, an example in which the wavelength selection mirror 34 is rotated has been described, but the wavelength selection mirror 34 may be eliminated and at least one of the prisms 32, 32 may be rotated to change the incidence angle φ of the pulsed laser light 21 incident on the grating 33.

[0038] 2. Challenges 2 is a graph showing an example of a periodically changed wavelength command and an actual wavelength of a pulsed laser beam 21 output by wavelength control according to a comparative example. The horizontal axis represents time, and the vertical axis represents wavelength. The comparative example of the present disclosure is a form that the applicant recognizes as being known only by the applicant, and is not a publicly known example that the applicant recognizes.

[0039] In Fig. 2, white circles indicate target wavelengths corresponding to wavelength command values, and black circles indicate actual measured wavelength values. Fig. 3 is a graph showing an example of the spectrum (solid line) of actual pulsed laser light 21 generated based on the wavelength commands for each of the two wavelengths λ1 and λ2 shown in Fig. 2. The horizontal axis represents wavelength, and the vertical axis represents light intensity. The spectral waveform shown by the dashed line shows an example of the spectrum when pulsed laser light 21 is output according to the wavelength command value.

[0040] As shown in Figure 2, when the wavelength command is changed periodically, wavelength deviation occurs due to the hysteresis characteristics, inherent vibration, and thermal characteristic fluctuation of the piezoelectric element, but when the wavelength command is switched at high speed, the wavelength control of the comparative example, which includes delay, cannot keep up and deviation remains. As a result, it is difficult to control the peak interval of the two wavelengths according to the wavelength command (see Figure 3).

[0041] 3. Embodiment 1 3.1 Configuration The configuration of the laser device 11 according to the first embodiment may be similar to that shown in FIG.

[0042] 3.2 Operation The laser device 11 according to the first embodiment differs from the comparative example in operation including the control executed by the processor 29. Hereinafter, the operation of the laser device 11 according to the first embodiment that differs from the comparative example will be described.

[0043] Fig. 4 is a timing chart showing an example of the operation of the laser device 11 according to the first embodiment. The horizontal axis represents time. The top row of Fig. 4 shows an example of burst-like pulse oscillation by burst operation, and the second row shows the waveform of a wavelength command that commands a target wavelength. The third row from the top shows the waveform of a piezoelectric command that is a drive command given to a piezoelectric element, and the bottom row shows the difference between the wavelength command and the wavelength that is actually measured. The deviation of the measured wavelength value from the wavelength command value is called the "wavelength deviation."

[0044] The waveform of the wavelength command switches between a command for a relatively long wavelength λ1 and a command for a relatively short wavelength λ2 within a period T during the burst period. In FIG. 4, the waveform of the wavelength command is shown as a square wave, but the actual wavelength command is a discrete graph that commands a target wavelength for each pulse. That is, the processor 29 changes the wavelength command of a plurality of successive pulses whose target wavelength is the long wavelength λ1 and the wavelength command of a plurality of successive pulses whose target wavelength is the short wavelength λ2 into a square wave. FIG. 4 illustrates a waveform of a wavelength command in the shape of a square wave, in which two pulses each of a long wavelength command and a short wavelength command are successive.

[0045] The target wavelength that is periodically changed between wavelength λ1 and wavelength λ2 is an example of a "target value" in this disclosure. Wavelength λ1 is an example of a "first target value" in this disclosure, and wavelength λ2 is an example of a "second target value" in this disclosure. The period T for changing the wavelength command is an example of a "wavelength change period" in this disclosure. In this specification, the period T may be referred to as a "rectangular period."

[0046] The waveform of the piezoelectric command is such that the piezoelectric command value changes periodically in accordance with switching between the commands for the wavelength λ1 and the wavelength λ2.

[0047] The processor 29 accumulates in memory the wavelength deviation for each pulse in each wavelength command, or the average value of the wavelength deviation (the average value of two consecutive pulses in the case of FIG. 4), for the rectangular period. Then, the processor 29 adjusts the piezo command value for the next rectangular period based on the accumulated wavelength deviation or the average value of the wavelength deviation. The term "adjust" includes the concept of "correct." The "next rectangular period" is an example of a "subsequent period" in this disclosure.

[0048] In order to maintain stability of wavelength control, the adjustment amount (correction amount) of the piezoelectric command value based on the wavelength deviation or the average value of the wavelength deviation is preferably a value obtained by multiplying the wavelength deviation or the average value of the wavelength deviation by a coefficient smaller than 1. This coefficient is a learning control coefficient, and is preferably in the range of 0.01 to 0.5, and more preferably in the range of 0.05 to 0.5. The adjustment amount of the piezoelectric command value calculated using the learning control coefficient is called the "piezo command correction amount."

[0049] The black dots shown in the graph showing the waveform of the wavelength deviation shown at the bottom of Fig. 4 indicate the wavelength deviation measured for each pulse, and are graphed as the average value of the wavelength deviation of two consecutive pulses corresponding to the wavelength commands for the long wavelength and short wavelength within a period T. By repeating the correction control of the piezo command values ​​for the long wavelength and short wavelength for each period T of the wavelength command, the wavelength deviation gradually becomes smaller.

[0050] Although an example has been shown here in which two consecutive pulses of pulsed laser light 21 are output according to a wavelength command with a long wavelength, and two consecutive pulses of pulsed laser light 21 are output according to a wavelength command with a short wavelength, two or more consecutive pulses of pulsed laser light 21 may be output for each wavelength command. Two consecutive pulses according to a wavelength command with a long wavelength are an example of a "first pulse number" in the present disclosure, and two consecutive pulses according to a wavelength command with a short wavelength are an example of a "second pulse number" in the present disclosure.

[0051] A piezo command correction amount for each target wavelength calculated in a preceding first period of the rectangular period is used to correct a piezo command value for the same target wavelength in a following second period. When n is an integer equal to or greater than 1, a piezo command value for the nth pulse in the second period is corrected based on the wavelength deviation of the nth pulse in the first period.

[0052] 3.3 Explanation of the flow chart showing the control example Fig. 5 is a flowchart showing an example of control in the laser device 11 according to embodiment 1. When the flowchart of Fig. 5 starts, in step S101, the processor 29 calculates the wavelength deviation of the current wavelength position or the average value of the wavelength deviation.

[0053] In step S102, the processor 29 calculates a piezoelectric command correction amount for the wavelength position of the next rectangular wave from the calculated wavelength deviation or the average value of the wavelength deviation.

[0054] In step S103, the processor 29 calculates the next piezo command value from the wavelength command.

[0055] In step S104, the processor 29 adds the piezoelectric command correction amount calculated at the previous wavelength position of the rectangular wave to the piezoelectric command value determined in step S103.

[0056] In step S105, the processor 29 drives the piezoelectric element with the piezoelectric command value determined in step S104.

[0057] After step S105, processor 29 ends the flowchart of Fig. 5. Processor 29 repeatedly executes the flowchart of Fig. 5 during the burst period of burst operation.

[0058] 3.4 Explanation of the control block diagram FIG. 6 is a control block diagram of the wavelength control executed by the processor 29. The control system of the wavelength control executed by the processor 29 includes a feedback control compensator (C FB ) 110 and a feedforward control compensator (C FF ) 120, a wavelength-specific average value calculation unit 130, and a learning controller 132. The learning controller 132 includes a learning control coefficient multiplication unit 133 that multiplies by a learning control coefficient (K), and a memory 134.

[0059] The processor 29 calculates the wavelength deviation from the difference between the wavelength measured by the wavelength monitor 37 and the wavelength command value, and performs feedback control using a feedback control compensator 110. For example, a compensator that performs PID (Proportional-Integral-Differential) control may be used as the feedback control compensator 110. The feedback control compensator 110 calculates a control value of the piezoelectric command value (hereinafter referred to as "feedback control command value") based on the input wavelength deviation. Note that "MM" in FIG. 6 represents a monitor module including the wavelength monitor 37.

[0060] The feedforward control compensator 120 calculates a feedforward control command value as a piezoelectric command value from the wavelength command value, for example, by using a gain coefficient for the generated wavelength command. The processor 29 adds the feedforward control command value calculated by the feedforward control compensator 120 to the feedback control command value to perform feedforward control.

[0061] The wavelength-specific average value calculation unit 130 calculates the average value of the wavelength deviation during each wavelength command period when the rectangular period is a long wavelength command and when the short wavelength command is issued. The learning control by the learning controller 132 is executed separately for the long wavelength command and the short wavelength command.

[0062] Processor 29 calculates the average value of the wavelength deviation for each wavelength calculated by feedback control, and further calculates a value obtained by multiplying this wavelength average value by K. The calculated value is added to the value previously stored in memory 134 (in the preceding period) as the learning control command value, thereby updating the learning control command value.

[0063] A learning control command value for a long wavelength command and a learning control command value for a short wavelength command are stored in memory 134. These learning control command values ​​stored in memory 134 correspond to the piezoelectric command correction amount for each target wavelength in the next cycle. The learning control command output controls the wavelength by adding the learning control command value stored in memory 134 to the feedforward control command value at the timing when the command transitions from a short wavelength to a long wavelength or from a long wavelength to a short wavelength.

[0064] When the number of pulses during a long wavelength command or a short wavelength command is "1", the wavelength-specific average value calculation is not performed, and the wavelength deviation of each pulse is used as is.

[0065] In this way, the processor 29 determines a piezoelectric command value by adding the output of the feedback control compensator 110 to the outputs of the feedforward control compensator 120 and the learning controller 132. The processor 29 outputs the determined piezoelectric command value to the piezoelectric driver 140, and drives the piezoelectric element 141 via the piezoelectric driver 140.

[0066] Driving the piezoelectric element 141 changes the wavelength of the pulsed laser light 21 output from the laser device 11. The wavelength of the pulsed laser light 21 is measured by the wavelength monitor 37, and the measured value is fed back to the processor 29. The processor 29 obtains the difference (wavelength deviation) between the measured wavelength value and the wavelength command value, and inputs the wavelength deviation to the feedback control compensator 110 and the wavelength-specific average value calculation unit 130.

[0067] 3.5 Actions and Effects According to the first embodiment, by repeatedly controlling for each rectangular period, it is possible to suppress the wavelength deviation and the interval error between the two-wavelength peaks caused by the hysteresis characteristic, inherent vibration, and thermal characteristic fluctuation of the piezoelectric element 141.

[0068] When the response of the piezoelectric element 141 sufficiently tracks the rectangular period, it is desirable to learn and control the wavelength deviation for each wavelength command for each pulse. However, according to the first embodiment, even when the response of the piezoelectric element 141 cannot track the rectangular period, the N-slit averaged two-wavelength spacing can be controlled in accordance with the wavelength command by using the average value of the wavelength deviation for each wavelength.

[0069] The laser chamber 12 is an example of a "chamber" in this disclosure. The wavelength selection mirror 34 is an example of an "optical element" and a "mirror" in this disclosure. The movable holder 36 that rotates the mirror holder 38 is an example of a "rotary stage" in this disclosure. The piezoelectric element unit 41 including the piezoelectric element 141 is an example of a "driving mechanism" in this disclosure. The piezoelectric command is an example of a "driving command" in this disclosure, and the piezoelectric command value is an example of a "driving command value" in this disclosure.

[0070] 4. Embodiment 2 4.1 Configuration The configuration of a laser device 11 according to the second embodiment may be similar to that shown in FIG.

[0071] 4.2 Operation The laser device 11 according to the second embodiment differs from the first embodiment in operation including the control executed by the processor 29. The following describes the operation of the laser device 11 according to the second embodiment that differs from the first embodiment. In the second embodiment, in addition to the wavelength control for each rectangular period described in the first embodiment, wavelength control is further performed in the burst period TBu.

[0072] FIG. 7 is a timing chart showing an example of the operation of the laser device 11 according to the second embodiment.

[0073] At the start of burst oscillation, a wavelength deviation different from the rectangular period occurs. Therefore, the wavelength deviation in each wavelength command or the average value of the wavelength deviation is stored in the memory 134 for the burst period TBu.

[0074] The processor 29 adjusts the piezo command value for the next burst period based on the accumulated wavelength deviation for each wavelength or the average value of the wavelength deviation.

[0075] In order to perform repeated learning control for each burst period TBu, learning control is executed in advance for each rectangular period so that only the wavelength deviation for each burst period TBu is detected while the wavelength command error for the rectangular period is suppressed.

[0076] In this case, since the wavelength deviation for each burst period TBu becomes large only at the start of driving (when the burst oscillation starts), it is desirable to apply the wavelength control by learning control for each burst period TBu only to a predetermined number Nf of pulses from the beginning of the burst. The predetermined number Nf of pulses may be, for example, 1 pulse or more and 20 pulses or less.

[0077] In addition, it is desirable to set the learning control coefficient for each burst period TBu smaller than the learning control coefficient for each rectangular period so that the learning control for each burst period TBu does not interfere with the learning control for each rectangular period. The learning control coefficient for each rectangular period is an example of a "first coefficient" in this disclosure, and the learning control coefficient for each burst period TBu is an example of a "second coefficient" in this disclosure. The piezo command correction amount calculated by the learning control for each rectangular period is called the rectangular period learning correction amount, and the piezo command correction amount calculated by the learning control for each burst period TBu is called the burst period learning correction amount.

[0078] 4.3 Explanation of the flow chart showing the control example Fig. 8 is a flowchart showing an example of control in the laser device 11 according to embodiment 2. When the flowchart of Fig. 8 starts, in step S201, the processor 29 determines whether or not it is within Nf pulses from the beginning of the burst.

[0079] If the determination result in step S201 is Yes, the processor 29 proceeds to step S202, and calculates the wavelength deviation of the current wavelength position or the average value of the wavelength deviation.

[0080] Next, in step S203, the processor 29 calculates a piezo command correction amount for the wavelength position of the next burst from the calculated wavelength deviation or the average value of the wavelength deviation.

[0081] After step S203, or if the determination result of step S201 is No, processor 29 proceeds to step S204.

[0082] In step S204, the processor 29 calculates a piezoelectric command correction amount for the wavelength position of the next rectangular wave from the calculated wavelength deviation or the average value of the wavelength deviation.

[0083] Then, in step S205, the processor 29 calculates the next piezo command value from the wavelength command.

[0084] In step S206, processor 29 determines whether or not it is within Nf pulses from the beginning of the burst. If the determination result in step S206 is Yes, processor 29 proceeds to step S207. In step S207, processor 29 adds the piezoelectric command correction amount (burst period learning correction amount) calculated at the wavelength position of the previous burst to the piezoelectric command value. After step S207, processor 29 proceeds to step S208.

[0085] On the other hand, if the determination result in step S206 is No, the processor 29 skips step S207 and proceeds to step S208.

[0086] In step S208, the processor 29 adds the piezoelectric command correction amount (rectangular period learning correction amount) calculated at the previous wavelength position of the rectangular wave to the piezoelectric command value.

[0087] After that, in step S209, the processor 29 drives the piezoelectric element 141 with the determined piezoelectric command value.

[0088] After step S209, the processor 29 ends the flowchart of Fig. 8. The processor 29 repeatedly executes the flowchart of Fig. 8 during the burst operation period.

[0089] Thus, the processor 29 performs wavelength control for each rectangular period to correct the piezo command value of the subsequent period having the same target wavelength, and further performs wavelength control for each burst period TBu to correct the piezo command value of the subsequent second burst period based on the wavelength deviation in the preceding first burst period. The wavelength control for correcting the piezo command value using the rectangular period learning correction amount for each rectangular period is an example of the "first wavelength control" in the present disclosure. The wavelength control for correcting the piezo command value using the burst period learning correction amount for each burst period TBu is an example of the "second wavelength control" in the present disclosure.

[0090] 4.4 Actions and Effects According to the second embodiment, by repeatedly controlling for each burst period in addition to controlling for each rectangular period, it is possible to suppress the wavelength deviation and the interval error between the two-wavelength peaks that occur when the burst oscillation of the pulsed laser light 21 starts.

[0091] 5. Manufacturing methods for electronic devices 9 shows a schematic configuration example of the exposure apparatus 25. The exposure apparatus 25 includes an illumination optical system 254 and a projection optical system 256. The illumination optical system 254 illuminates a reticle pattern of a reticle (not shown) arranged on a reticle stage RT with laser light incident from the laser device 11. The projection optical system 256 reduces and projects the laser light transmitted through the reticle to form an image on a workpiece (not shown) arranged on a workpiece table WT. The workpiece is a photosensitive substrate such as a semiconductor wafer coated with photoresist.

[0092] The exposure device 25 exposes the workpiece with laser light reflecting the reticle pattern by synchronously translating the reticle stage RT and the workpiece table WT. After the reticle pattern is transferred to the semiconductor wafer by the exposure process described above, a semiconductor device can be manufactured through multiple processes. A semiconductor device is an example of an "electronic device" in this disclosure.

[0093] 6.Other The above description is intended to be illustrative rather than restrictive. Thus, it will be apparent to one skilled in the art that modifications may be made to the disclosed embodiments without departing from the scope of the claims. It will also be apparent to one skilled in the art that the disclosed embodiments may be used in combination.

[0094] Terms used throughout the present specification and claims should be construed as "open ended" terms unless otherwise specified. For example, terms such as "include," "have," "comprise," and "include" should be construed as "not excluding the presence of elements other than those listed." In addition, the modifier "a" should be construed as meaning "at least one" or "one or more." In addition, the term "at least one of A, B, and C" should be construed as "A," "B," "C," "A+B," "A+C," "B+C," or "A+B+C." Furthermore, it should be construed to include combinations thereof with elements other than "A," "B," and "C."

Claims

1. 1. A laser device comprising: an oscillator that outputs a burst-like pulsed laser beam; a wavelength monitor that measures a central wavelength of the pulsed laser light output from the oscillator; a processor; The oscillator includes: a chamber having a discharge electrode for applying a voltage to a laser gas therein; an optical element disposed in an optical path of the pulsed laser light; a rotation stage on which the optical element is placed; a drive mechanism that drives the rotary stage to rotate the optical element; a grating onto which the pulsed laser light transmitted through or reflected by the optical element is incident; an output coupling mirror that outputs the pulsed laser light, The processor, a processor that periodically changes a target value of the central wavelength of the pulsed laser beam between a first target value and a second target value different from the first target value, and outputs a drive command to the drive mechanism to change an incident angle of the pulsed laser beam to the grating based on the target value and a measurement value of the central wavelength measured by the wavelength monitor, thereby controlling the central wavelength, and corrects a drive command value of the drive mechanism when outputting the pulsed laser beam in a subsequent period having the same target value based on a deviation between the measurement value of the central wavelength and the target value. Laser device.

2. 2. The laser device according to claim 1, the pulsed laser light having the first target value and the pulsed laser light having the second target value are each outputted in succession in a plurality of pulses, a first pulse number of the pulsed laser light of the first target value is equal to a second pulse number of the pulsed laser light of the second target value; Laser device.

3. 2. The laser device according to claim 1, The processor, When n is an integer of 1 or more, correcting the drive command value for the n-th pulse in a subsequent second period based on the measurement value of the center wavelength of the n-th pulse in a first period of a wavelength change period in which the target value is periodically changed; Laser device.

4. 2. The laser device according to claim 1, the pulsed laser light having the first target value and the pulsed laser light having the second target value are each outputted in succession in a plurality of pulses, The processor, correcting the drive command value of the pulse of the first target value in a subsequent second period based on an average value of the deviation of a first pulse number in which the first target value in a first period of a wavelength change period in which the target value is changed periodically; correcting the drive command value of the pulse of the second target value in the subsequent second period based on an average value of the deviation of the number of consecutive second pulses of the second target value in the first period; Laser device.

5. 2. The laser device according to claim 1, The processor, correcting the drive command value by an amount corresponding to a value obtained by multiplying the deviation or an average value of the deviation by a coefficient smaller than 1; Laser device.

6. 6. The laser device according to claim 5, The coefficient is equal to or greater than 0.01 and equal to or less than 0.

5. Laser device.

7. 2. The laser device according to claim 1, The processor, performing a first wavelength control for each wavelength change period in which the target value is periodically changed, in which the drive command value in a subsequent second period is corrected based on the deviation in a first period; moreover, performing a second wavelength control for each burst period, the second wavelength control correcting the drive command value for a subsequent second burst period based on the deviation in the first burst period; Laser device.

8. 8. The laser device according to claim 7, The second wavelength control is applied only to a predetermined number of pulses from the beginning of a burst in the burst period. Laser device.

9. 9. The laser device according to claim 8, The predetermined number of pulses is 20 pulses or less. Laser device.

10. 8. The laser device according to claim 7, the first wavelength control includes correcting the drive command value by an amount corresponding to a value obtained by multiplying the deviation or an average value of the deviation by a first coefficient smaller than 1; the second wavelength control includes correcting the drive command value by an amount corresponding to a value obtained by multiplying the deviation or an average value of the deviation by a second coefficient smaller than the first coefficient. Laser device.

11. 2. The laser device according to claim 1, The optical element is a mirror. Laser device.

12. 2. The laser device according to claim 1, The optical element is a prism. Laser device.

13. 2. The laser device according to claim 1, The driving mechanism includes a piezoelectric element. Laser device.

14. 2. The laser device according to claim 1, The processor, a feedback control compensator that calculates a feedback control command value based on the deviation between the measured value and the target value of the center wavelength; a feedforward control compensator that calculates a feedforward control command value as the drive command value based on the target value and adds the feedforward control command value to the feedback control command value; a learning controller that updates the learning control command value by multiplying the deviation or an average value of the deviations of the target value for each wavelength by a coefficient smaller than 1 for each wavelength change period, and adding the resultant value to a value stored in a memory in a previous period as a learning control command value; Including, adding the learning control command value for each wavelength stored in the memory to the feedforward control command value at a timing when the target value is changed; Laser device.

15. 1. A method for manufacturing an electronic device, comprising: an oscillator that outputs a burst-like pulsed laser beam; a wavelength monitor that measures a central wavelength of the pulsed laser light output from the oscillator; a processor; The oscillator includes: a chamber having a discharge electrode for applying a voltage to a laser gas therein; an optical element disposed in an optical path of the pulsed laser light; a rotation stage on which the optical element is placed; a drive mechanism that drives the rotary stage to rotate the optical element; a grating onto which the pulsed laser light transmitted through or reflected by the optical element is incident; an output coupling mirror that outputs the pulsed laser light, The processor, a processor that controls the central wavelength by periodically changing a target value of the central wavelength of the pulsed laser beam between a first target value and a second target value different from the first target value, and outputting a drive command to the drive mechanism to change an incident angle of the pulsed laser beam to the grating based on the target value and a measurement value of the central wavelength measured by the wavelength monitor, and corrects a drive command value of the drive mechanism when outputting the pulsed laser beam in a subsequent period having the same target value based on a deviation between the measurement value of the central wavelength and the target value; outputting the laser light to an exposure device; exposing the laser light onto a photosensitive substrate in the exposure apparatus to manufacture an electronic device. A method for manufacturing an electronic device.

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