Equipment and method for obtaining nitrogen-doped silicon melt, and system for producing nitrogen-doped single crystal silicon

Abstract

The present invention provides a nitrogen-doped silicon melt producing system and method, and a nitrogen-doped single-crystalline silicon manufacturing system, which includes a granulator for preparing a plurality of uniformly sized polycrystalline silicon particles from a polycrystalline silicon raw material block, a reactor for chemically reacting the polycrystalline silicon particles with nitrogen gas to produce a corresponding plurality of reacted particles, the reactor producing silicon nitride on the surface of each polycrystalline silicon particle through the chemical reaction, so that each reacted particle includes a polycrystalline silicon core and a silicon nitride coating layer coating the polycrystalline silicon core, and a melter for melting the reacted particles to produce the nitrogen-doped silicon melt containing silicon atoms and nitrogen atoms.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to Chinese Patent Application No. 202111115707.3 filed in China on September 23, 2021, the entire contents of which are incorporated herein by reference.

[0002] The present application relates to the field of semiconductor silicon wafer manufacturing, and in particular to an apparatus and method for obtaining nitrogen-doped silicon melt and a system for manufacturing nitrogen-doped single crystal silicon. [Background technology]

[0003] Silicon wafers for manufacturing semiconductor electronic components such as integrated circuits are mainly produced by slicing single crystal silicon rods drawn by the Czochralski method. The Czochralski method involves melting polycrystalline silicon in a quartz crucible to obtain a silicon melt, immersing a single crystal seed crystal in the silicon melt, and then continuously lifting the seed crystal away from the silicon melt surface, so that a single crystal silicon rod grows at the phase interface during the movement.

[0004] In the above manufacturing process, it is very advantageous to provide a silicon wafer having a denuded zone (DZ) extending from the front side into the body and a region adjacent to the DZ and further extending into the body, which contains bulk microdefects (BMD). The front side here refers to the surface of the silicon wafer on which electronic components are formed. The above DZ is important because, in order to form electronic components on a silicon wafer, it is required that the electronic component formation region is free of crystalline defects, otherwise it will cause failures such as circuit breaks, and by forming the electronic components in the DZ, the influence of crystalline defects can be avoided. The role of the above BMD is to have an intrinsic gettering (IG) effect on metal impurities, and to keep the metal impurities in the silicon wafer away from the DZ, thereby avoiding adverse effects such as an increase in leakage current due to metal impurities and deterioration of the film quality of the gate oxide film.

[0005] In the process of manufacturing the silicon wafer having the above-mentioned BMD region, it is very advantageous that the silicon wafer is doped with nitrogen, for example, the formation of nitrogen-nucleated BMDs is promoted, the BMDs reach a certain density, the BMDs function effectively as a gettering source for metals, and there is a favorable effect on the density distribution of the BMDs, such as making the density of the BMDs more uniform in the radial direction of the silicon wafer and making the density of the BMDs higher in the region adjacent to the DZ and gradually decreasing as it approaches the body of the silicon wafer.

[0006] As a method for doping silicon wafers with nitrogen, a silicon melt in a quartz crucible can be doped with nitrogen, and a single crystal silicon rod drawn from the molten silicon melt and a silicon wafer cut from the single crystal silicon rod can be doped with nitrogen.

[0007] Referring to FIG. 1, a current implementation of doping silicon melt with nitrogen is shown. As shown in FIG. 1, polycrystalline silicon raw material chunks B1 are accommodated in, for example, a quartz crucible (QC) together with silicon nitride chunks B2. Here, the polycrystalline silicon raw material chunks B1 are shown in a schematic diagram by a region with a large area surrounded by a line frame, and the silicon nitride chunks B2 are shown in a schematic diagram by a region with a small area filled in black. Here, the silicon nitride chunks B2 are first loaded into the quartz crucible QC so as to be located at the bottom of the quartz crucible QC. Thereafter, the polycrystalline silicon raw material chunks B1 are loaded into the quartz crucible QC so as to be located above the silicon nitride chunks B2 and at the top of the quartz crucible QC. When the quartz crucible QC is heated and the polycrystalline silicon raw material chunk B1 and the silicon nitride chunk B2 contained in the quartz crucible QC melt, a melt containing silicon atoms and nitrogen atoms is obtained, i.e., nitrogen-doped silicon melt M. However, in the above implementation method, the nitrogen atoms from the silicon nitride chunks B2 cannot sufficiently dissolve throughout the melt, but can only dissolve in specific ranges around each silicon nitride chunk B2, so that the distribution of the doped nitrogen is not uniform throughout the melt. Specifically, the obtained melt can be broadly divided into three regions depending on the nitrogen concentration or nitrogen content: a first melt region M1 with a low nitrogen content, which is shown diagrammatically in FIG. 1 by low-density point packing and is the region where the polycrystalline silicon raw material block B1 is located in the quartz crucible QC; a second melt region M2 with a medium nitrogen content, which is shown diagrammatically in FIG. 1 by medium-density point packing and is located at the junction of the polycrystalline silicon raw material block B1 and the silicon nitride block B2 in the quartz crucible QC; and a third melt region M3 with a high nitrogen content, which is shown diagrammatically in FIG. 1 by high-density point packing and is the region where the silicon nitride block B2 is located in the quartz crucible QC.

[0008] In order to improve the uniformity of the distribution of the doped nitrogen in the entire melt, FIG. 2 shows another current realization method of doping nitrogen into the silicon melt. The difference from the method shown in FIG. 1 is that in FIG. 2, the distribution of the silicon nitride chunks B2 is more uniform than that of the polycrystalline silicon raw material chunks B1 in the polycrystalline silicon raw material chunks B1 and silicon nitride chunks B2 contained in the quartz crucible QC. This may be realized, for example, by alternately putting the polycrystalline silicon raw material chunks B1 and the silicon nitride chunks B2 into the quartz crucible QC in batches, or may be realized, for example, by stirring the polycrystalline silicon raw material chunks B1 and the silicon nitride chunks B2 contained in the quartz crucible QC shown in FIG. 1. Compared with FIG. 1, it can be seen that the uniformity of the nitrogen distribution in the melt obtained in FIG. 2 is superior. However, the method shown in FIG. 2 still has the problem of "local non-uniformity" of the nitrogen concentration. Specifically, referring to FIG. 2, the obtained melt can still be roughly divided into three regions according to differences in nitrogen concentration or nitrogen content: a first melt region M1 having a low nitrogen content, which is shown diagrammatically in FIG. 2 by low density point packing and located far from the geometric center of the silicon nitride mass B2 within the quartz crucible QC; a second melt region M2 having a medium nitrogen content, which is shown diagrammatically in FIG. 2 by medium density point packing and located moderately far from the geometric center of the silicon nitride mass B2 within the quartz crucible QC; and a third melt region M3 having a high nitrogen content, which is shown diagrammatically in FIG. 2 by high density point packing and located closer to the geometric center of the silicon nitride mass B2 within the quartz crucible QC.

[0009] The nitrogen doping methods in the above related art all have the problem of non-uniform distribution of the doped nitrogen throughout the melt to various degrees. As a result, the nitrogen concentration in the single crystal silicon rod extracted from such a melt and the silicon wafer cut from the single crystal silicon rod is also non-uniform, so that the desired BMD density distribution cannot be obtained or it is difficult to effectively control the BMD density distribution, which affects the gettering effect, which is an advantageous factor. Summary of the Invention [Problem to be solved by the invention]

[0010] In order to solve the above technical problems, the embodiments of the present application are expected to provide equipment and a method for obtaining a nitrogen-doped silicon melt, which solves the problem that the nitrogen concentration in the nitrogen-doped silicon melt is not uniform, and effectively controls the density distribution of BMDs in a silicon wafer to exhibit a good gettering effect, and a system for producing nitrogen-doped single crystal silicon. [Means for solving the problem]

[0011] The technical means of the present application is realized as follows.

[0012] As a first aspect, an embodiment of the present application provides an acquisition facility for acquiring a nitrogen-doped silicon melt, the acquisition facility including a granulation device for preparing a plurality of polycrystalline silicon particles having a uniform particle size from a polycrystalline silicon raw material lump, a reaction device for chemically reacting the plurality of polycrystalline silicon particles with nitrogen gas to acquire a plurality of corresponding reaction particles, the reaction device generating silicon nitride on the surface layer of each polycrystalline silicon particle by the chemical reaction, so that each reaction particle includes a polycrystalline silicon core and a silicon nitride coating layer coating the polycrystalline silicon core, and a melting device for melting the plurality of reaction particles to acquire the nitrogen-doped silicon melt including silicon atoms and nitrogen atoms.

[0013] As a second aspect, an embodiment of the present application provides a method for obtaining a nitrogen-doped silicon melt, which is realized by applying the obtaining equipment described in the first aspect. The method includes preparing a plurality of polycrystalline silicon particles having a uniform particle size from a polycrystalline silicon raw material lump, chemically reacting the plurality of polycrystalline silicon particles with nitrogen gas to obtain a plurality of corresponding reaction particles, in which silicon nitride is generated on the surface layer of each polycrystalline silicon particle by the chemical reaction, so that each reaction particle includes a polycrystalline silicon core and a silicon nitride coating layer coating the polycrystalline silicon core, and melting the plurality of reaction particles to obtain the nitrogen-doped silicon melt containing silicon atoms and nitrogen atoms.

[0014] In a third aspect, an embodiment of the present application provides a system for producing nitrogen-doped single crystal silicon, the system including the acquisition equipment according to the first aspect and a crystal pulling equipment for pulling a single crystal silicon rod using the nitrogen-doped silicon melt by the Czochralski method. Effect of the Invention

[0015] The embodiments of the present application provide an apparatus and method for obtaining a nitrogen-doped silicon melt and a system for producing nitrogen-doped single crystal silicon. Although the nitrogen atoms from the silicon nitride coating layer can also only dissolve within a certain range around the silicon nitride coating layer, the silicon nitride coating layer is uniformly formed outside the polycrystalline silicon core, so that when a large amount of reaction particles are stacked and melted, the nitrogen atoms from the silicon nitride coating layer of all reaction particles are more uniformly dissolved throughout the melt than in the related art. Furthermore, after configuring the appropriate size of the polycrystalline silicon core and the thickness of the silicon nitride coating layer according to the size at which the nitrogen atoms from the silicon nitride coating layer can dissolve within a certain range around the silicon nitride coating layer, it is realized that the nitrogen atoms are completely and uniformly dissolved throughout the melt. As a result, in the obtained nitrogen-doped silicon melt, the distribution of doped nitrogen throughout the melt is more uniform, or the consistency of the nitrogen concentration in different regions of the melt is better. [Brief description of the drawings]

[0016] [Figure 1] FIG. 1 is a schematic diagram of one implementation of doping a silicon melt with nitrogen in the related art. [Diagram 2] FIG. 2 is a schematic diagram of another implementation of doping a silicon melt with nitrogen in the related art. [Diagram 3] FIG. 3 is a schematic diagram of components of a harvesting facility for harvesting a nitrogen-doped silicon melt according to an embodiment of the present application. [Figure 4]FIG. 4 is a schematic diagram of a conversion process of converting polycrystalline silicon raw chunks into polycrystalline silicon particles, converting the polycrystalline silicon particles into reactant particles, and converting the reactant particles into a melt according to an embodiment of the present application. [Diagram 5] FIG. 5 is a schematic diagram of containing reactive particles in a quartz crucible to carry out a melting process according to an embodiment of the present application. [Figure 6] FIG. 6 is a schematic diagram of reactor components according to an embodiment of the present application. [Figure 7] FIG. 7 is a schematic diagram of components of a container according to an embodiment of the present application. [Figure 8] FIG. 8 is a schematic diagram of components of a container according to another embodiment of the present application. [Figure 9] FIG. 9 is a schematic diagram of some components of a capture facility for capturing a nitrogen-doped silicon melt according to another embodiment of the present application. [Figure 10] FIG. 10 is a schematic diagram of a method for obtaining a nitrogen-doped silicon melt according to an embodiment of the present application. [Figure 11] FIG. 11 is a schematic diagram of components of a system for producing nitrogen-doped single crystal silicon according to an embodiment of the present application. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the technical solutions in the embodiments of the present application will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present application.

[0018] 3 and 4, an embodiment of the present application provides an acquisition equipment 10 for acquiring a nitrogen-doped silicon melt M. The acquisition equipment 10 includes a granulation device 100, a reaction device 200, and a melting device 300. The granulation device 100 is for preparing a plurality of polycrystalline silicon particles G having a uniform particle size from a polycrystalline silicon raw material lump B1. Such a granulation device 100 is known in the related art, and includes, for example, a granulation device of a crushing granulator and a screening machine. Here, the crushing granulator can crush the polycrystalline silicon raw material lump B1 and crush the polycrystalline silicon raw material lump B1 having a large volume to obtain polycrystalline silicon particles having a small volume. The screening machine can select particles having a desired particle size from the polycrystalline silicon particles having a small volume. The reaction device 200 is for chemically reacting the plurality of polycrystalline silicon particles G with nitrogen gas (N2) to obtain a corresponding plurality of reaction particles RG. Here, silicon nitride (Si3N4) is generated on the surface layer of each polycrystalline silicon grain G by the chemical reaction, and each reaction grain RG includes a polycrystalline silicon core C and a silicon nitride coating layer L covering the polycrystalline silicon core C, as shown in detail by an enlarged view of a single reaction grain RG within a dotted rectangular frame in FIG. 4. In addition, an embodiment of specific components of the reaction apparatus 200 will be described in detail below. The melting apparatus 300 is for melting the plurality of reaction grains RG to obtain the nitrogen-doped silicon melt M containing silicon atoms and nitrogen atoms. The melting apparatus 300 here may be an apparatus constituted of, for example, a quartz crucible, a heater, etc., in a conventional crystal pulling furnace, and related parts for melting a polycrystalline silicon raw material lump, or may be an independent apparatus not belonging to a crystal pulling furnace. Referring to FIG. 5, a schematic diagram is shown in which the plurality of reaction grains (RG: Reaction Grain) are accommodated in a quartz crucible QC in a crystal pulling furnace (not shown) to perform the above melting.

[0019] In the acquisition equipment 10 according to the present application, the nitrogen atoms from the silicon nitride coating layer L can be dissolved only within a specific range around the silicon nitride coating layer L, but since the silicon nitride coating layer L is formed uniformly on the outside of the polycrystalline silicon core C, as shown in FIG. 5, when the quartz crucible QC is heated and all the reaction particles RG contained in the quartz crucible QC are melted, the nitrogen atoms from the silicon nitride coating layer L of all the reaction particles RG are dissolved more uniformly throughout the melt than in the related art. Furthermore, after configuring the appropriate size of the polycrystalline silicon core C and the thickness of the silicon nitride coating layer L according to the size at which the nitrogen atoms from the silicon nitride coating layer L can be dissolved within a specific range around the silicon nitride coating layer L, it is realized that the nitrogen atoms are completely and uniformly dissolved throughout the melt. As a result, in the obtained nitrogen-doped silicon melt M, the distribution of the doped nitrogen throughout the melt is more uniform, or the consistency of the nitrogen concentration in different regions of the melt is better.

[0020] It can be seen that the uniform particle size of the plurality of polycrystalline silicon particles G is important, and the smaller the particle size, the easier it is to uniformly distribute the nitrogen atoms in the nitrogen-doped silicon melt M. However, if the particle size is too small, when the plurality of polycrystalline silicon particles G are stacked and react with nitrogen gas, the polycrystalline silicon particles G in the stack cannot sufficiently contact with the nitrogen gas, which affects the generation of silicon nitride, or silicon nitride cannot be uniformly generated on the surface of the plurality of polycrystalline silicon particles G. In this way, even if the plurality of polycrystalline silicon particles G are melted, it is still not possible to obtain a melt with a uniform distribution of nitrogen atoms. On the other hand, the smaller the particle size, the higher the process control requirements for the actual growth of single crystal silicon, and the larger the particle size, the higher the cost. In view of this, in any embodiment of the present application, the granulation device 100 is configured to prepare particles of a uniform size having a particle size between 5 mm and 20 mm. Or, in any embodiment of the present application, the uniform particle size of the plurality of polycrystalline silicon particles G is between 5 mm and 20 mm. Therefore, not only can each polycrystalline silicon particle G be fully contacted with nitrogen gas, but also the distribution of nitrogen atoms in the resulting melt can be uniform, reducing control requirements and costs. It is understood that the polycrystalline silicon particles G are not necessarily spherical, and that the size of a single polycrystalline silicon particle G in different directions may differ. Therefore, the above "grain size" refers to the maximum size of each polycrystalline silicon particle G in any direction.

[0021] In addition, the control of the total amount of doped nitrogen can be achieved by variables such as reaction temperature, nitrogen introduction amount, and reaction time, and it can be understood that the smaller the uniform particle size, the greater the total amount of doped nitrogen obtained when the above variables are the same. The nitrogen doping amount that has a favorable effect on the density of BMD can be 20g to 200g of silicon nitride doped for 410kg of polycrystalline silicon raw material. In order to know the nitrogen doping amount, the above reaction apparatus 200 can be equipped with a weighing machine for obtaining the weight of the plurality of polycrystalline silicon particles G and monitoring the total weight of the plurality of reaction particles RG in real time. Thereby, the mass of the generated silicon nitride and the nitrogen doping amount can be obtained, and the above chemical reaction can be interrupted when the nitrogen doping amount meets the requirements.

[0022] Hereinafter, the reaction apparatus 200 according to the embodiment of the present application will be described in detail. Referring to FIG. 6, the reaction apparatus 200 includes a container 210, a nitrogen gas supplier 220, and a heater 230. The container 210 has a cavity 211 for accommodating the plurality of polycrystalline silicon particles G. The nitrogen gas supplier 220 is for supplying nitrogen gas into the cavity 211, and is shown, for example, by an arrow in FIG. 6. The heater 230 is for heating the container 210 to provide a high temperature, for example, between 800° C. and 1100° C., in the cavity 211, and reacting the polycrystalline silicon with the nitrogen gas to form silicon nitride. The heater 230 may be, for example, a thermal resistance wire wound around the container 210 to provide a uniform high temperature throughout the cavity 211, as shown in FIG. 6, or may be a microwave heater not shown in detail in the drawing.

[0023] When the polycrystalline silicon particles G are stacked, in order to realize that silicon nitride is generated on the surface of each polycrystalline silicon particle G, referring to FIG. 7, the cavity 211 is in the shape of an elongated tube. The container 210 has an inlet 212 and an outlet 213 provided at both ends of the longitudinal direction of the cavity 211, respectively. Furthermore, the nitrogen gas supplier 220 shown in FIG. 6 is configured so that nitrogen gas is continuously supplied to the cavity 211 via the inlet 212 as shown generally by a hollow arrow at the inlet 212 in FIG. 7, the nitrogen gas flows through the cavity 211 as shown generally by a solid arrow inside the cavity 211 in FIG. 7, and is discharged via the outlet 213 as shown generally by a hollow arrow at the outlet 213 in FIG. 7. In this way, each polycrystalline silicon particle G is located in the flow path of the nitrogen gas, so that each polycrystalline silicon particle G can sufficiently come into contact with the nitrogen gas and react. Optionally, the flow rate of the nitrogen gas supplied to the cavity 211 is between 1 L / min and 200 L / min.

[0024] In any embodiment of the present application, the vessel 210 is made of quartz, which can withstand the high temperature environment of the above chemical reactions.

[0025] In order to avoid the inclusion of impurities during the above chemical reactions, in any embodiment of the present application, the nitrogen gas supplier 220 shown in FIG. 6 can supply nitrogen gas with a purity of 99.99% or higher.

[0026] Referring to Fig. 8, in any embodiment of the present application, the container 210 has a movable baffle 212 for opening the bottom. In this way, when the container 210 is installed, for example, above the quartz crucible QC of a crystal pulling furnace with the bottom facing down, when the movable baffle 212 moves to the left in the direction of the arrow shown in Fig. 8, the bottom of the container 210 is opened, and the polycrystalline silicon particles G contained in the cavity 211 automatically fall into the quartz crucible QC under the action of gravity, realizing the rapid release of the polycrystalline silicon particles G, and avoiding the contamination of the crucible chamber caused by the container 210 staying above the quartz crucible QC for a long time. When the movable baffle 212 moves to the right in the direction of the arrow shown in Fig. 8, the container 210 can be closed so as to hold the polycrystalline silicon particles G in the cavity 211.

[0027] In any embodiment of the present application, referring to FIG. 9, the acquisition facility 10 may further include a purge device 400 for purging the plurality of polycrystalline silicon particles G with a protective gas, such as argon gas, before the occurrence of the chemical reaction, in order to remove residual moisture and / or residual chemical impurities from the surface of each polycrystalline silicon particle G. FIG. 9 shows an alternative embodiment of the purge device 400. That is, the purge device 400 purges the polycrystalline silicon particles G through the inlet 212 when the polycrystalline silicon particles G are accommodated in the cavity 211 of the container 210 shown in FIG. 7. Here, in FIG. 7, the flow direction of the protective gas is indicated by a solid arrow. In this way, the chemical reaction can be performed immediately after the purge is completed, avoiding the excess transportation of the polycrystalline silicon particles G and avoiding the polycrystalline silicon particles G from being contaminated to the greatest extent.

[0028] 10, an embodiment of the present application further provides a method for obtaining a nitrogen-doped silicon melt M. The method includes the following steps: S101: A plurality of polycrystalline silicon particles G having a uniform particle size are prepared from a polycrystalline silicon raw material lump B1. S102: The plurality of polycrystalline silicon particles G are chemically reacted with nitrogen gas to obtain a plurality of corresponding reaction particles RG, where the chemical reaction produces silicon nitride on the surface layer of each polycrystalline silicon particle G, and each reaction particle RG includes a polycrystalline silicon core C and a silicon nitride coating layer L coating the polycrystalline silicon core C. S103: The plurality of reactive particles RG are melted to obtain the nitrogen-doped silicon melt M containing silicon atoms and nitrogen atoms.

[0029] 11, an embodiment of the present application further provides a system 1 for producing nitrogen-doped single crystal silicon, which includes an acquisition equipment 10 according to the present application and a crystal pulling equipment 20 for pulling a single crystal silicon rod using the nitrogen-doped silicon melt M by using the Czochralski method.

[0030] The crystal pulling equipment 20 is an equipment composed of the devices in the crystal pulling furnace, such as a draft tube and a pulling mechanism, and related elements for pulling the single crystal silicon rod. When the melting device 300 of the acquisition equipment 10 is an equipment composed of the devices in the crystal pulling furnace, such as a quartz crucible and a heater, and related elements for melting the polycrystalline silicon raw material lump, the melting device 300 and the crystal pulling equipment 20 of the present application can be realized by the same conventional crystal pulling furnace.

[0031] The technical means described in the embodiments of the present application can be combined in any manner as long as there is no contradiction.

[0032] The above are only specific embodiments of the present application, but the scope of protection of the present application is not limited thereto, and any changes or replacements that a person skilled in the art can easily think of within the technical scope disclosed in the present application should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A granulator for preparing a plurality of polycrystalline silicon particles having a uniform particle size from a polycrystalline silicon raw material lump; a reaction device for chemically reacting the plurality of polycrystalline silicon particles with nitrogen gas to obtain a corresponding plurality of reaction particles, the reaction device being configured to generate silicon nitride on a surface layer of each polycrystalline silicon particle through the chemical reaction, such that each reaction particle includes a polycrystalline silicon core and a silicon nitride coating layer coating the polycrystalline silicon core; a melting device for melting the plurality of reactive particles to obtain a nitrogen-doped silicon melt containing silicon atoms and nitrogen atoms; Including, The nitrogen-doped silicon melt is obtained by obtaining the nitrogen-doped silicon melt, and the uniform grain size of the plurality of polycrystalline silicon grains is between 5 mm and 20 mm.

2. The reaction apparatus comprises: a container having a cavity for containing the plurality of polycrystalline silicon particles; a nitrogen gas supplier for supplying nitrogen gas into the cavity; A heater for heating the container; The acquisition facility of claim 1 .

3. the cavity is in the shape of an elongated tube; The container further has an inlet and an outlet provided at both ends of the cavity in a longitudinal direction, 3. The acquisition facility of claim 2, wherein the nitrogen gas supplier is configured to continuously supply nitrogen gas to the cavity via the inlet, and such that the nitrogen gas flows through the cavity and is then discharged via the outlet.

4. The capture facility of claim 2 , wherein the vessel is made of quartz.

5. The acquisition equipment described in claim 3, wherein the container is made of quartz.

6. The acquisition facility according to claim 2 , wherein the nitrogen gas supplier supplies nitrogen gas with a purity of 99.99% or higher.

7. The capture facility of claim 2 , wherein the vessel has a movable baffle for opening the bottom.

8. 2. The acquisition facility of claim 1, further comprising a purge device for purging the plurality of polycrystalline silicon particles with a protective gas prior to occurrence of the chemical reaction to remove residual moisture and / or residual chemical impurities from a surface of each polycrystalline silicon particle.

9. A method for obtaining a nitrogen-doped silicon melt, which is realized by applying the obtaining facility according to any one of claims 1 to 8, comprising: preparing a plurality of polycrystalline silicon particles having a uniform particle size from a polycrystalline silicon raw material lump; chemically reacting the plurality of polycrystalline silicon particles with nitrogen gas to obtain a corresponding plurality of reacted particles, in which the chemical reaction produces silicon nitride on a surface layer of each polycrystalline silicon particle, such that each reacted particle includes a polycrystalline silicon core and a silicon nitride coating layer coating the polycrystalline silicon core; Melting the plurality of reactive particles to obtain the nitrogen-doped silicon melt containing silicon atoms and nitrogen atoms.

2. A method for obtaining a nitrogen-doped silicon melt, comprising:

10. An acquisition facility according to any one of claims 1 to 8; A crystal pulling facility for pulling a single crystal silicon rod using the nitrogen-doped silicon melt by the Czochralski method; 1. A system for producing nitrogen-doped single crystal silicon, comprising:

Images