Channeled Lift Pins

Abstract

To provide, generally, a semiconductor processing or reactor system, and particularly a semiconductor reactor system, and components included therein, which prevent material deposition on undesirable locations of, for example, the reactor system and / or a substrate.SOLUTION: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space included in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.SELECTED DRAWING: Figure 2A

Description

[Technical field]

[0001] The present disclosure relates generally to semiconductor processing or reactor systems, and particularly to semiconductor reactor systems, and components contained therein, for example, to preventing material deposition in undesired locations on the reactor system and / or substrate. [Background technology]

[0002] The reaction chamber may be used to deposit various layers of materials onto a semiconductor substrate. The semiconductor may be placed on a susceptor within the reaction chamber. Both the substrate and the susceptor may be heated to a desired substrate temperature set point. In an exemplary substrate treatment process, one or more reactive gases may be passed over the heated substrate, causing the deposition of thin films of materials on the substrate surface. Through subsequent deposition, doping, lithography, etching and other processes, these layers become integrated circuits.

[0003] The reaction chamber is usually manufactured in a single chamber or a dual chamber. In a dual chamber arrangement, the two chambers may be oriented vertically, one above the second chamber, and the second chamber may be separated, for example, by a susceptor. During operation of a reactor system with a dual chamber, undesirable contaminants may accumulate and / or coat the underside of the substrate (i.e., the surface of the substrate adjacent to the susceptor) and / or the substrate may bend during the deposition process, causing material to accumulate at the substrate edge. Thus, an apparatus and method are desirable to prevent deposition on the underside of the substrate and the accumulation of undesirable materials at the substrate edge. Summary of the Invention [Means for solving the problem]

[0004] This Summary is provided to introduce a selection of concepts in a simplified form that are described in further detail below in the Detailed Description of Exemplary Embodiments of this Disclosure. This Summary is not intended to identify key features or essential features of the claimed subject matter or to be used to limit the scope of the claimed subject matter.

[0005] In some embodiments, a reactor system is provided. The reactor system disclosed herein may enable seating and / or planarization of a substrate on a susceptor to reduce or prevent undesirable material deposition and / or deposition patterns on the substrate.

[0006] In various embodiments, the reactor system may include a reaction chamber surrounded by a chamber sidewall and a susceptor disposed within the reaction chamber between the reaction space and a lower chamber space contained within the reaction chamber. The susceptor may include a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed within the pin hole. The lift pin may include a pin body including a pin channel defined by a pin channel surface disposed within the pin body such that when the lift pin is disposed within the pin hole, the reaction space is in fluid communication with the lower chamber space. The pin channel may be disposed along a length of the pin body. In various embodiments, the pin channel may extend linearly and parallel to an axis along which the pin body extends.

[0007] In various embodiments, the lift pin may be positioned such that an outer pin surface of the pin body is positioned adjacent to a pin hole surface that defines the pin hole. In various embodiments, the outer pin surface may define a cross-sectional shape that includes a missing geometric shape, and the pin channel is the missing portion. In various embodiments, the pin body may include a cylindrical shape with a cutout that includes the pin channel, and the pin body further includes a circular cross-section with a cutout that includes the pin channel, and the pin channel includes a sector channel within the circular cross-section of the pin body. In various embodiments, the pin channel may be positioned within the pin body such that the pin channel surface forms an enclosed shape. In various embodiments, the lift pin may include a pin head at an upper end of the pin body, and the pin channel may extend through the pin head. The pin head may be at least partially positioned in the pin hole of the susceptor. The pin head may form at least a partial seal with the susceptor. In various embodiments, the lift pin may include an upper end of a pin body, and the lift pin and susceptor may be configured to move relative to one another such that the upper end of the lift pin body can protrude from the substrate support surface of the susceptor.

[0008] In various embodiments, the reactor system may further comprise a vacuum source in fluid communication with the lower chamber space, and the vacuum source may be in fluid communication with the reaction space of the reaction chamber through the pin channel of the lift pin. In various embodiments, the chamber sidewall may be disposed proximate to the susceptor outer surface of the susceptor. In various embodiments, the reactor system may further comprise a space disposed between the chamber sidewall and the susceptor outer surface such that the reaction space and the lower chamber space of the reaction chamber may be in fluid communication through the space. In various embodiments, the flow of fluid may be restricted between the chamber sidewall and the outer surface of the susceptor.

[0009] In various embodiments, the method may include generating a pressure differential in a reaction chamber of a reactor between a reaction space of the reaction chamber and a lower chamber space of the reaction chamber, the reaction space and the lower chamber space being separated by a susceptor disposed in the reaction chamber, forming a pressure differential such that the lower chamber space pressure is lower than the reaction space pressure, and / or in response to generating the pressure differential, a fluid flows to the lower chamber space through a pin hole disposed in the susceptor and extending between the reaction space and the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may include a pin body, and the pin body may include a pin channel disposed in the pin body such that when the lift pin is disposed in the pin hole, the reaction space is in fluid communication with the lower chamber space via the pin channel.

[0010] In various embodiments, the substrate may be disposed on a substrate support surface of the susceptor, the substrate support surface facing the reaction space, and the pin holes disposed through the substrate support surface. The method may further include generating a suction force on the substrate toward the substrate support surface in response to generating a pressure differential, flowing a fluid through the pin holes into the lower chamber space, and / or resting the substrate flat on the susceptor support surface in response to generating a suction force on the substrate. In various embodiments, generating a pressure differential may be accomplished by a vacuum source fluidly coupled to the lower chamber space. In various embodiments, the pin channel may be disposed within and completely surrounded by the pin body. In various embodiments, the pin body may comprise a cross-sectional shape with a missing portion, and the pin channel may be the missing portion.

[0011] For the purpose of summarizing the present disclosure and the advantages achieved over the prior art, some specific objects and advantages of the present disclosure are described hereinabove. Of course, it should be understood that not all such objects or advantages may be achieved by any particular embodiment of the present disclosure. Thus, for example, one skilled in the art will recognize that the embodiments disclosed herein may be implemented in a manner that achieves or optimizes one advantage or a group of advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0012] All of these embodiments are intended to be within the scope of the present disclosure. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments, taken in conjunction with the accompanying drawings, and the present disclosure is not limited to any particular embodiments discussed.

[0013] While this specification concludes with claims particularly pointing out and distinctly claiming what are regarded as embodiments of the present disclosure, the advantages of the embodiments of the present disclosure may be more readily apparent from the description of certain specific examples of embodiments of the present disclosure when read in conjunction with the accompanying drawings, in which elements with like element numbering throughout the drawings are intended to be identical. [Brief description of the drawings]

[0014] [Figure 1] FIG. 1 is a schematic diagram of an exemplary reactor system, according to various embodiments. [Figure 2A] FIG. 2A is a schematic diagram of an exemplary reaction chamber with a lowered susceptor, according to various embodiments. [Figure 2B] FIG. 2B is a schematic diagram of an exemplary reaction chamber with the susceptor in a raised position, according to various embodiments. [Diagram 3] FIG. 3 illustrates a perspective view of a lift pin with a channel disposed within a susceptor, according to various embodiments. [Figure 4] FIG. 4 illustrates a top perspective view of a channel lift pin according to various embodiments. [Diagram 5] FIG. 5 illustrates a bottom perspective view of a channel lift pin according to various embodiments. [Figure 6] FIG. 6 illustrates a front view of a channel lift pin, according to various embodiments. [Figure 7] FIG. 7 illustrates a back view of a channel lift pin, according to various embodiments. [Figure 8] FIG. 8 illustrates a right side view of a channel lift pin according to various embodiments. [Figure 9] FIG. 9 illustrates a left side view of a channel lift pin according to various embodiments. [Figure 10] FIG. 10 illustrates a top view of a channel lift pin, according to various embodiments. [Figure 11] FIG. 11 illustrates a bottom view of a channel lift pin, according to various embodiments. [Figure 12] FIG. 12 illustrates a method for treating a substrate in a reactor system, according to various embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Certain specific embodiments and examples are disclosed below, but it will be understood by those skilled in the art that the disclosure extends beyond the specifically disclosed embodiments and / or applications of the present disclosure, as well as obvious modifications and equivalents thereof. Thus, it is not intended that the scope of the present disclosure should be limited by the specific embodiments described herein.

[0016] The figures shown herein are not meant to be actual diagrams of any particular materials, apparatus, structures or devices, but merely representations used to describe embodiments of the present disclosure.

[0017] As used herein, the term "substrate" may refer to any underlying material or materials that may be used or upon which a device, circuit or film may be formed.

[0018] The term "atomic layer deposition" (ALD) as used herein can refer to a vapor deposition process in which a deposition cycle, preferably multiple consecutive deposition cycles, are performed in a process chamber. Typically, during each cycle, a precursor chemisorbs to the deposition surface (e.g., the surface of a substrate or a surface of a previously deposited underlayer, such as a material deposited using a previous ALD cycle) to form a monolayer or submonolayer that does not readily react with additional precursors (i.e., a self-limiting reaction). If necessary, a reactant (e.g., another precursor or reactant gas) can then be subsequently introduced into the process chamber for use in converting the chemisorbed precursor to the desired material on the deposition surface. Typically, this reactant can further react with the precursor. Additionally, a purge step can be utilized during each cycle to remove excess precursor from the process chamber after conversion of the chemisorbed precursor and / or to remove excess reactants and / or reaction by-products from the process chamber. Additionally, the term "atomic layer deposition" as used herein is also meant to include processes indicated by related terms, such as, for example, "chemical vapor deposition atomic layer deposition," "atomic layer epitaxy" (ALE), molecular beam epitaxy (MBE), gas source MBE, or metalorganic MBE, as well as chemical beam epitaxy when performed with alternating pulses of precursor compositions, reactive gases, and purge (e.g., inert carrier) gases.

[0019] As used herein, the term "chemical vapor deposition" (CVD) can refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce a desired deposit.

[0020] The terms "film" and "thin film" as used herein can refer to any continuous or non-continuous structures and materials deposited by the methods disclosed herein. "Films" and "thin films" can include, for example, 2D materials, nanorods, nanotubes, or nanoparticles, or planar partial or complete molecular layers, or partial or complete atomic layers, or clusters of atoms and / or molecules. "Films" and "thin films" can include materials or layers that have pinholes, but are still at least partially continuous.

[0021] As used herein, the term "contaminants" may refer to any undesirable material disposed within the reaction chamber that may affect the purity of the substrate disposed within the reaction chamber. The term "contaminants" may refer to, but is not limited to, undesirable deposits, metallic and non-metallic particles, impurities, and waste materials disposed within the reaction chamber.

[0022] Reactor systems used for ALD, CVD, and / or the like may be used for a variety of applications, including deposition and etching of materials onto a substrate surface. In various embodiments, reactor system 50 may include a reaction chamber 4, a susceptor 6 for holding substrate 30 during processing, a fluid distribution system 8 (e.g., a showerhead) for distributing one or more reactants to the surface of substrate 30, one or more reactant sources 10, 12, and / or a carrier and / or purge gas source 14 fluidly coupled to reaction chamber 4 via lines 16-20 and valves or controllers 22-26. System 50 may also include a vacuum source 28 fluidly coupled to reaction chamber 4.

[0023] 2A and 2B, embodiments of the present disclosure may include reactor systems and methods that may be utilized to process a substrate in a reactor 100. In various embodiments, the reactor 100 may comprise a reaction chamber 110 for processing a substrate. In various embodiments, the reaction chamber 110 may comprise a reaction space 112 (i.e., an upper chamber) that may be configured to process one or more substrates, and / or a lower chamber space 114 (i.e., a lower chamber). The lower chamber space 114 may be configured for loading and unloading a substrate from the reaction chamber and / or to provide a pressure differential between the lower chamber space 114 and the reaction space 112.

[0024] In various embodiments, the reaction space 112 and the lower chamber space 114 may be separated by a susceptor 130 disposed within the reaction chamber 110. In various embodiments, the reaction space 112 and the lower chamber space 114 may be substantially fluidly separated or isolated from one another. For example, the susceptor 130 may fluidly separate the reaction space 112 and the lower chamber space 114 by forming at least a partial seal (i.e., at least restricting the flow of fluid) between the susceptor 130 and a chamber sidewall 111 of the reaction chamber 110 disposed proximate to the susceptor outer surface 132 of the susceptor 130. That is, the space 108 between the susceptor 130 and the chamber sidewall 111 may be minimized or eliminated such that there is little or no fluid movement between the susceptor 130 and the chamber sidewall 111.

[0025] In various embodiments, to prevent or reduce fluid flow between the susceptor 130 and the chamber sidewall 111, one or more seal members (e.g., seal member 129) may extend from the susceptor 130 (e.g., from the susceptor outer surface 132) and / or from the chamber sidewall 111 of the reaction chamber 110 to the other, forming at least a partial seal (i.e., restricting or preventing fluid flow) between the susceptor 130 and the chamber sidewall 111. At least a partial seal of the reaction space 112 from the lower chamber volume 114 may be desirable to prevent or reduce precursor gases and / or other fluids utilized in processing the substrate 150 from entering and / or contacting the lower chamber volume 114 of the reaction chamber 110. For example, precursor gases utilized to treat a substrate within the reaction space may contain corrosive deposition precursors that may contact the lower chamber space 114 to generate undesirable deposits / contaminants / particles that may then be reintroduced into the reaction space 112, thereby providing a source of contamination to a substrate disposed within the reaction space.

[0026] In various embodiments, although the seal member 129 extending between the susceptor 130 and the chamber sidewall 111 of the reaction chamber 110, and / or at least a partial seal formed by direct contact between the susceptor 130 and the chamber sidewall 111 of the reaction chamber 110, may limit or substantially prevent fluid communication between the reaction space 112 and the lower chamber space 114 through the space 108, a small amount of precursor gas may still enter the lower chamber space 114 by diffusion, which may result in corrosion, undesirable deposition, and contaminants within the lower chamber of the reaction chamber of the reactor system.

[0027] In various embodiments, the susceptor 130 may include one or more pin holes 137. Each pin hole 137 may extend through the susceptor 130 from a top surface of the susceptor 130 (e.g., a substrate support surface 135 on which a substrate 150 may be placed for processing) to a bottom surface 136 of the susceptor 130. The susceptor top surface (e.g., a substrate support surface 135) may be a surface of the susceptor 130 adjacent to the reaction space 112 of the reaction chamber 110. The susceptor bottom surface 136 may be a surface of the susceptor 130 adjacent to the lower chamber space 114 of the reaction chamber 110. In the absence of lift pins disposed in the pin holes 137, the reaction space 112 and the lower chamber space 114 may be in fluid communication with each other through the pin holes 137. That is, the pin holes 137 may be in fluid communication with the reaction space 112 and the lower chamber space 114.

[0028] A lift pin 200 (or other similar object) may be disposed within each pin hole 137. With further reference to FIGS. 3-11, the lift pin 300 (an example of the lift pin 200 shown in FIGS. 2A and 2B) may include a lift pin body 350 that is configured to extend into at least a portion of the pin hole 337 (an example of the pin hole 137 in FIGS. 2A and 2B) when disposed within the pin hole 337. The pin body 350 may include a cross-sectional shape (in a cross section taken perpendicular to the length of the pin body 350) that is complementary to the cross-sectional shape of the pin hole 337. The pin body 350 may be defined by a pin outer surface 370. At least a portion of the pin outer surface 370 is disposed adjacent a pin hole surface 339 that defines the pin hole 337 when the lift pin 300 is disposed within the pin hole 337. In various embodiments, the pin outer surface 370 may form at least a partial seal with the pin hole surface 339 such that little or no fluid (e.g., liquid or gas) passes between the pin outer surface 370 and the contacting pin hole surface 339.

[0029] In various embodiments, the lift pin 300 may include a pin top end 310 opposed to a pin bottom end 390 with a pin body 350 (and pin length) extending therebetween. The pin top end 310 of the lift pin 300 may include a pin head 320. The pin head 320 may be of any suitable shape compared to the pin body 350. In various embodiments, the pin head 320 may include a cross-sectional shape (in a cross-section taken perpendicular to the length of the pin body 350) that is the same as the cross-sectional shape of the pin body 350. In various embodiments, the pin head 320 may include a cross-sectional shape (in a cross-section taken perpendicular to the length of the pin body 350) that includes a larger or smaller surface area than the cross-sectional shape of the pin body 350.

[0030] In embodiments in which the pin head 320 includes a larger surface area than the cross-sectional shape of the pin body 350, the pin hole 337 in which the lift pin 300 is disposed may include a pin head hole 338 having a cross-sectional shape complementary to the cross-sectional shape of the pin head 320. The pin head 320 may be defined by a pin head outer surface 322. The pin head outer surface 322 may be disposed adjacent a pin hole surface 339 that defines the pin head hole 338 when the lift pin 300 is disposed within the pin hole 337. In various embodiments, the pin head outer surface 322 may form at least a partial seal with the pin hole surface 339 of the pin head hole 338 (i.e., restricting the flow of fluid between the pin head 320 and the pin hole surface 339 of the pin head hole 338) and / or the overhang 326 of the pin head 320 may form at least a partial seal with a complementary portion of the pin hole surface 339, thereby allowing little or no fluid (e.g., liquid or gas) to pass between the pin head 320 and the pin head hole 338 of the pin hole 337.

[0031] In various embodiments, the lift pin 300 may comprise a pin top surface 315 at the pin top end 310. The pin top surface 315 may be part of the pin head 320. The pin top surface 315 may comprise any suitable shape. For example, the pin top surface 315 may comprise a flat, concave, or convex surface. In various embodiments, the pin top surface 315 may be configured to contact the substrate 150 and move the substrate 150 relative to the susceptor 130. For example, the lift pin 300 may move the substrate 150 up or down relative to the susceptor 130 (i.e., increase or decrease the space between the substrate 150 and the susceptor 130).

[0032] In various embodiments, the lift pin 300 may include a pin recess 331 at the cross-sectional area change differential between the pin head 320 and the remainder of the pin body 350. In various embodiments, there may be no space or recess between such dimensions.

[0033] As discussed, the substrate 150 and the susceptor 130 may be movable relative to one another. For example, in various embodiments, one or more lift pins 300 (or lift pins 200 shown in FIGS. 2A and 2B) may be configured to separate the substrate 150 from the susceptor 130 and to place the substrate 150 in contact with (i.e., supported by) the susceptor 130. In various embodiments, the susceptor 130 may be moved up and down, e.g., via the susceptor elevator 104, such that the susceptor 130 moves relative to the substrate 150. In various embodiments, the lift pins 200 (or 300 in FIGS. 3-11) may be moved up and down, e.g., via the lift pin elevator / platform 202, such that the substrate 150 moves relative to the susceptor 130. In various embodiments, the susceptor 130 and / or the lift pins 200 (or 300 in FIGS. 3-11) may be stationary while the other moves. In various embodiments, the susceptor 130 and / or the lift pins 200 may be configured to move relative to the other.

[0034] In various embodiments, the reactor system may include a susceptor (e.g., susceptor 130) including three pin holes (e.g., pin holes 137) (or any suitable number of pin holes), with a corresponding lift pin (e.g., lift pin 300) disposed in each pin hole. The pin holes may be spaced in any suitable pattern on or across the substrate support surface 135 (e.g., equidistant around the circumference of the substrate support surface 135, in a pattern across the substrate support surface 135, and / or the like). The lift pins may move together up and down relative to the susceptor (e.g., relative to the substrate support surface) to raise and lower a substrate (e.g., substrate 150). The substrate may be raised, for example, to a processing position (i.e., raised position) (e.g., processing position 106 shown in FIG. 2B) and / or lowered to a loading position (i.e., lowered position) (e.g., loading position 103 shown in FIG. 2A) within the reaction space (e.g., reaction space 112). In various embodiments, the lift pins can move while the susceptor is stationary, or the lift pins can be stationary while the susceptor is moving to raise or lower the substrate relative to the susceptor. In various embodiments, the lift pins and susceptor may move to raise or lower the substrate relative to the susceptor.

[0035] In various embodiments, the lift pins 200 (or 300 in FIGS. 3-11 ) can facilitate removal of the substrate 150 from the reaction chamber 110 that may be stuck to the susceptor 130, for example, due to static friction between the substrate 150 and the susceptor 130. The lift pins 200 (or 300 in FIGS. 3-11 ) can facilitate separation of the substrate 150 from the susceptor 130 by the lift pins 200 and / or the susceptor 130 moving relative to one another.

[0036] In various embodiments, the substrate 150 may be placed directly on the susceptor 130 (e.g., on the substrate support surface 135 of the susceptor 130) for processing. In various embodiments, the top surface of the susceptor 130 may be placed in the same plane as the substrate support surface 135. In various embodiments, the substrate support surface 135 may be recessed into the susceptor 130 such that a recess exists in the top surface of the susceptor 130. The recess that includes the substrate support surface 135 may have a height such that at least a portion of the height of the substrate 150 is disposed within the recess. The recess may have a height such that when the substrate 150 is disposed on the substrate support surface 135 and within the recess, the top surface of the substrate 150 is flush with the top surface of the susceptor 130.

[0037] In various embodiments, to load and / or remove the substrate 150 from the reaction chamber 110, the substrate may be placed on the lift pins 200 (or 300 in FIGS. 3-11 ) (e.g., on the pin top surfaces 315). Placing the substrate 130 on the lift pins 200 (or 300 in FIGS. 3-11 ) may facilitate loading or removing the substrate 150 from the reaction chamber 110, for example, through the opening 98 in the chamber sidewall 111.

[0038] In various embodiments, once the substrate 150 is placed on the lift pins 200, the substrate 130 may move from the loading position 103 to the processing position 106 and receive the substrate 150 during such movement. In such embodiments, the pin tops and / or pin heads (e.g., pin heads 320) of the lift pins 200 may be received by the pin holes 137 (pin holes 337 in FIG. 3 ) such that the substrate 150 may directly contact the susceptor 130. In various embodiments, the pin heads of the lift pins 200 may be supported by a portion of the pin holes 337 and / or pin head holes 338 that are complementary to the overhangs 326 of the pin heads 320. Thus, the lift pins 200 can be moved to the processing position 106 together with the susceptor 130, and the lift pins 200 are positioned within the pin holes 137 such that the pin upper ends (e.g., the pin upper ends 310 of the lift pins 300) are flush with and / or below the substrate support surface 135.

[0039] In various embodiments, once the substrate 150 is placed on the lift pins 200, the lift pins 200 may move downwardly into the susceptor 130 such that the substrate 150 is received by the susceptor 130 (i.e., the substrate 150 rests on the substrate support surface 135). Accordingly, the pin tops (e.g., the pin tops 310 of the lift pins 300) may be flush with and / or below the substrate support surface 135. The substrate 150 may then be processed in a reaction chamber.

[0040] In various embodiments, one or more lift pins may include a channel (i.e., a void portion) disposed in the pin body along the length of the lift pin. The pin channel may extend the length of the lift pin such that when the lift pin is disposed within the respective pin hole of the susceptor, both the reaction space and the lower chamber space of the reaction chamber may be in fluid communication with the pin channel. Thus, the pin channel may enable fluid communication between the reaction space and the lower chamber space when the lift pin is disposed within the respective pin hole. In various embodiments, the pin channel may extend linearly and parallel to the axis along which the pin body extends. In various embodiments, the pin channel may extend between the pin top end and the pin bottom end in any suitable configuration (e.g., non-linear, a path that is non-parallel to the spanning of the pin body, serpentine, spiral, or any other desired configuration). In various embodiments, the pin channels may extend sufficiently from the pin top end toward the pin bottom end such that when the lift pins are placed in the respective pin holes of the susceptor and a substrate is placed on and in contact with the susceptor, the reaction space and the lower chamber space are in fluid communication through the pin channels. In various embodiments, the pin channels may extend from the pin top end (e.g., pin top end 310) to the pin bottom end (e.g., pin bottom end 390) or anywhere between the pin top end and the pin bottom end.

[0041] In embodiments in which the lift pins include a pin head, the pin channel 340 extends through the pin head 320 to the pin upper end 310, as shown in Figures 3-11.

[0042] The pin channel may have any suitable configuration. For example, lift pin 300 may include a pin channel 340 defined by a pin channel surface 342. In embodiments in which the pin channel is not completely enclosed within the pin body of the lift pin, such as when pin channel 340 is not completely enclosed within pin body 350, the pin channel surface (e.g., pin channel surface 342) may not form an enclosed shape.

[0043] In various embodiments, the pin outer surface 350 may define an enclosed cross-sectional shape of the pin body 350, regardless of whether the pin outer surface 370 actually forms an enclosed cross-sectional shape. For example, as shown in FIGS. 3-11, the pin body 350 defines a circular cross-sectional shape, but the pin outer surface 370 does not actually form an enclosed circular cross-sectional shape due to the pin channel 340. However, by extrapolating the pin outer surface 370 into the void within the pin body 350 (i.e., the pin channel 340), one can readily determine that the cross-sectional shape of the pin body 350 defined by the pin outer surface 370 is circular. Thus, in embodiments where a pin channel is not enclosed within the pin body of the lift pin, such as where the pin channel 342 is not completely enclosed within the pin body 350, the pin outer surface (pin outer surface 370) may define the cross-sectional shape (e.g., geometric shape) of the pin body such that the pin channel (e.g., pin channel 342) is part of the missing shape. 3-11, the pin body 350 may be cylindrical with a cutout (pin channel 340), may have a circular cross-sectional shape (extrapolated from the path of the pin exterior surface 370) and a cutout (pin channel 340), or the pin channel 340 may be sector-shaped. The pin body may have any suitable cross-sectional shape, and the pin channel may have any suitable cross-sectional shape (e.g., rectangular, square, triangular, circular, oval, and / or the like).

[0044] In various embodiments, the pin channel may be completely enclosed within the pin body. In such embodiments, the channel exterior surface forms an enclosed shape. In such embodiments, the pin channel may comprise any suitable cross-sectional shape (e.g., rectangular, square, triangular, circular, oval, and / or the like).

[0045] In various embodiments, the pin channel may comprise any suitable portion of the pin body. For example, as shown in FIGS. 3-11, the pin channel 340 may comprise a quarter of the pin body 350 (or a quarter of the cross-sectional shape of the pin body 350). In various embodiments, the pin channel may be configured as a third, a fifth, a sixth, an eighth, a tenth, or a half of the pin body, or a sixth, an eighth, or between a tenth and a half. In various embodiments, the pin body may comprise multiple pin channels such that the reaction space and the lower chamber space are in fluid communication when the lift pins are positioned in the respective pin holes of the susceptor. In various embodiments, the pin channel may comprise a shape surrounded by the pin body that comprises a cross-sectional shape concentric with the cross-sectional shape of the pin body. In various embodiments, the pin channel may comprise a shape surrounded by the pin body positioned at any suitable location within the pin body.

[0046] The lift pins 300 may be constructed from any suitable material, such as steel, aluminum, an aluminum alloy, a ceramic material (eg, silicon carbide), and / or the like.

[0047] During substrate processing (e.g., during atomic layer deposition, chemical vapor deposition (CVD), and / or the like), the substrate may bow upward (i.e., the outer edge of the substrate may move away from the substrate support surface of the susceptor relative to the central region of the substrate). This may cause more material deposition at the substrate edge compared to the center of the substrate, for example, because the substrate edge may be closer to a fluid distribution system (e.g., a showerhead). However, a uniform material distribution across the substrate surface may be desired. The substrate bowing may also cause undesired material deposition on the underside of the substrate below the raised substrate edge.

[0048] To avoid undesired build-up of more material at the substrate edge and underside deposition caused by substrate curvature, the systems and methods discussed herein may be desirable to place the substrate on the substrate support surface of the susceptor for substrate processing in a manner that offsets the substrate curvature. That is, the systems and methods herein may cause the substrate to be placed substantially flat on the substrate support surface of the susceptor such that the substrate edges do not curve upward proximate the chemical delivery system and such that the underside of the substrate is not exposed to the reaction space (i.e., the underside of the substrate, including the substrate edge, rests on the substrate support surface of the susceptor).

[0049] 12, a method 1200 for processing a substrate in a reaction chamber is shown according to various embodiments. It should also be understood that embodiments of the present disclosure may be utilized in a reaction chamber configured for a number of deposition processes, including, but not limited to, ALD, CVD, metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and physical vapor deposition (PVD). Embodiments of the present disclosure may also be utilized in a reaction chamber configured to process a substrate with reactive precursors, which may also include etching processes such as reactive ion etching (RIE), inductively coupled plasma etching (ICP), and electron cyclotron resonance etching (ECR).

[0050] In various embodiments, and with reference to FIGS. 2A-11, the substrate 150 may be placed in the reaction chamber 110 (step 1202). In various embodiments, the substrate 150 may be placed directly on the substrate support surface 135 of the susceptor 130. In various embodiments, the substrate 150 may be placed on a lift pin 200 (or 300 in FIGS. 3-11) that protrudes from the substrate support surface 135 of the susceptor 130. In such embodiments, the lift pin 200 and / or the susceptor 130 may be moved relative to the other such that the pin upper end 310 is flush with the substrate support surface 135 of the susceptor 130 or lower than the substrate support surface 135 (i.e., the pin upper end 310 is placed within the susceptor 130) such that the substrate 150 is placed directly on and in contact with the substrate support surface 135. In various embodiments, the lift pins 200 may receive the substrate 150, and the susceptor 130 may move upward while the lift pins 200 remain stationary such that the lift pins 200 recess into the susceptor 130 and pin holes 137, and the susceptor 130 receives the substrate 150 on the substrate support surface 135 and positions the susceptor 130 at a processing position 106 within the reaction space 112.

[0051] In various embodiments, the substrate 150 may curve during processing such that an outer edge of the substrate 150 (i.e., the portion of the substrate 150 closer to the chamber sidewall 111 when the substrate 150 is positioned on the susceptor 130) is closer to a chemical delivery system (e.g., showerhead 180) through which material may be applied to the substrate 150. Without being bound by theory, the curvature may be caused by compounds in a layer deposited on the substrate 150 contracting, thereby pulling the sides of the substrate 150 upward (toward the showerhead 180). Thus, it may be desirable to mount (e.g., planarize) the substrate 150 on the substrate support surface 135 of the susceptor 130 to planarize the substrate 150 before and / or during subsequent processing (e.g., deposition of an additional chemical layer).

[0052] In various embodiments, a pressure differential may be created between the reaction space 112 and the lower chamber space 114 (step 1204). A vacuum source (e.g., vacuum source 92 and / or auxiliary pump 94, which may be an example of vacuum pump 28 of FIG. 1) may be in fluid communication with the lower chamber space 114. The vacuum source may cause fluid flow from the lower chamber space 114 and the reaction chamber 110, reducing the pressure therein. The pressure in the reaction space 112 may remain the same or may reduce at a slower rate than the pressure in the lower chamber space 114 while the vacuum source causes fluid flow from the lower chamber space 114.

[0053] The susceptor 130 may include at least one pin hole 137 that traverses the substrate 130 from the substrate support surface 135 to the susceptor bottom surface 136 (or at least a portion therebetween), each hole having a lift pin 200 / 300 disposed therein. One or more of the lift pins may include at least one pin channel 340 that extends the length of the pin body 350. As discussed herein, the pin channel 340 may extend any suitable length of the pin body 350 such that when the lift pin 300 is disposed within the pin hole 137 of the susceptor 130 and the pin top end 310 is flush with or below the substrate support surface 135, the reaction space 112 and the lower chamber space 114 may be in fluid communication through the pin hole 137 and the pin channel 340. For example, the pin channel 340 may extend from the pin top end 310 to the pin bottom end 390. As another example, the pin channel 340 can extend from the pin top end 310 to the length of the pin body 350 such that the length of the pin body 350, including the pin channel 340, is thicker than the thickness of the susceptor 130 (and any other components of the reactor 100) between the reaction space 112 and the lower chamber space 114. As another example, the pin channel 340 can extend from the pin top end 310 to the length of the pin body 350 such that the length of the pin body 350, including the pin channel 340, is longer than the length of the pin body 350 disposed on the susceptor 130 (and any other components of the reactor 100) between the reaction space 112 and the lower chamber space 114 when the lift pins 300 are resting in their respective pin holes 337.

[0054] In response to creating a pressure difference between the reaction space 112 and the lower chamber space 114 (i.e., the reaction space 112 having a higher pressure than the lower chamber space 114), fluid can flow from the reaction space 112 to the lower chamber space 114, for example, through the pin holes of the susceptor 130 and through the pin channels of the lift pins disposed in the pin holes (step 1206). For example, fluid can flow from the reaction space 112 to the lower chamber space 114 through the pin holes 137 and the pin channels 340. The substrate 150 can be disposed on the substrate support surface 135 and on the pin holes 137, so that the fluid flowing from the reaction space 112 through the pin holes 137 and the pin channels 340 to the lower chamber space 114 can apply a suction force to the substrate 150 proximate the location of the pin holes 137. Such a suction force can be directed toward the substrate support surface 135 and the lower chamber space 114. Thus, the suction force applied to the substrate 150 may flatten or seat the substrate 150 on the substrate support surface 135 of the susceptor 130 (step 1208). In various embodiments, the pin holes 137 are positioned proximate the outer edges of the substrate 150 (those edges that may be prone to curvature) to allow the outer edges of the substrate 150 to be pulled down flat onto the substrate support surface 135 of the susceptor 130. Thus, the underside of the substrate 150 may not be exposed to unwanted deposition of material applied via, for example, the showerhead 180, and the outer edges of the substrate 150 may not be exposed to greater material deposition due to their proximity to the showerhead 180 compared to a central portion of the substrate 150.

[0055] In various embodiments, the suction force through the pin hole 137 causes the pressure therein (including, for example, in the portion of the pin hole 337 above the pin top end 310 when the pin is resting in the pin hole 337) and below the substrate 150 to be lower than the pressure in the reaction space 112. Thus, by resting or flattening the substrate 150 on the substrate support surface 135, at least a partial seal can be created over the pin hole 137 and between the substrate 150 and the substrate support surface 135, such that materials applied during a deposition cycle do not easily move under the substrate 150 (i.e., between the substrate 150 and the substrate support surface 135), limiting or preventing undesired contamination of the underside of the substrate 150 and the lower chamber space 114. Such a (partial) seal also prevents movement of the substrate 150 on the substrate support surface 135.

[0056] In various embodiments, the steps of method 1200 for mounting or planarizing substrate 150 on substrate support surface 135 (e.g., steps 1204-1208) may be applied throughout substrate processing and / or at any suitable time and in any suitable manner. For example, the steps for mounting substrate 150 on substrate support surface 135 may be performed continuously before, during, and / or between deposition cycles. As another example, the steps of mounting substrate 150 on substrate support surface 135 may be performed before and / or during each deposition cycle (i.e., before and / or throughout each application of material by showerhead 180 to form a resulting layer on substrate 150, with interruptions between deposition cycles during drying / baking).

[0057] In various embodiments, deposition cycles may be performed on the substrate 150 until a desired layer of the desired chemistry is disposed on the substrate 150 at a desired thickness. Accordingly, the substrate 150 may be removed from the reaction chamber 110. To that end, the susceptor 130 and / or the lift pins 200 may move relative to each other. For example, the susceptor 130 may move downwards in the reaction chamber 110 relative to the lift pins 200, and / or the lift pins 200 may move upwards in the reaction chamber 110 relative to the susceptor 130. Thus, the substrate 150 may be raised by the lift pins 200 away from the substrate support surface 135 of the susceptor 130, which may facilitate removing the substrate 150 from the reaction chamber 110.

[0058] Although exemplary embodiments of the present disclosure are described herein, it should be understood that the present disclosure is not limited thereto. For example, while the reactor system is described in connection with various specific configurations, the present disclosure is not necessarily limited to these examples. Various changes, modifications, and improvements of the systems and methods described herein can be made without departing from the spirit and scope of the present disclosure.

[0059] The subject matter of the present disclosure includes all novel and non-obvious combinations and subcombinations of the various systems, components, and configurations, as well as other features, functions, operations, and / or properties disclosed herein, and any and all equivalents thereof. [Explanation of symbols]

[0060] 4. Reaction Chamber 6 Susceptor 8 Fluid Distribution Systems 10, 12 Reactant Source 14 Purge gas source 16~20 lines 22~26 Valve or controller 28 Vacuum source 30 Base material 50 Reactor System 100 Reactor 104 Susceptor Elevator 108 Space 110 Reaction Chamber 111 Chamber side wall 112 Reaction Space 114 Lower chamber space 129 Sealing material 130 Susceptor 132 Susceptor outer surface 135 Base material support surface 136 Bottom surface of susceptor 137 Pin Hole 150 Base material 180 shower head 200 Lift Pin 202 Lift Pin Elevator / Platform 300 Lift Pin 310 Pin top end 315 Pin top 320 Pinhead 322 Pinhead outer surface 326 Overhang 337 Pin Hole 338 Pinhead hole 339 Pin hole surface 340 pin channel 342 Pin Channel Surface 350 Lift pin body 370 Pin outer surface 390 Pin bottom end

Claims

1. 1. A reactor system comprising: a reaction chamber surrounded by a chamber sidewall; a susceptor disposed within the reaction chamber, the susceptor being disposed between a reaction space and a lower chamber space contained within the reaction chamber; a susceptor comprising a pin hole disposed through said susceptor such that said pin hole is in fluid communication with said reaction space and said lower chamber space, and said reaction space is in fluid communication with said lower chamber space; a lift pin disposed within the pin hole, the lift pin comprising a pin body and a pin head provided at an upper end of the pin body, the lift pin comprising a pin channel defined by a pin channel surface disposed on an outer peripheral surface of the pin body and an outer peripheral surface of the pin head and extending along a length of the pin body and the pin head, such that when the lift pin is disposed within the pin hole, the reaction space is fluidly connected to the lower chamber space.

2. 10. The reactor system of claim 1, wherein the lift pins are positioned such that an outer pin surface of the pin body is positioned adjacent a pin hole surface defining the pin hole.

3. 2. The reactor system of claim 1, wherein the pin body comprises a cylindrical shape having a cutout that contains the pin channel, the pin body further comprises a circular cross-section having the cutout that contains the pin channel, the pin channel comprising a sector channel within the circular cross-section of the pin body.

4. 10. The reactor system of claim 1, further comprising a vacuum source in fluid communication with the lower chamber volume, the vacuum source in fluid communication with the reaction volume of the reaction chamber through the pin channels of the lift pins.

5. A reactor system as described in claim 1, wherein the pin head is at least partially disposed in the pin hole of the susceptor, and the pin head forms at least a partial seal with the susceptor.

6. The reactor system of claim 1 , wherein the chamber sidewall is disposed proximate an outer susceptor surface of the susceptor.

7. 7. The reactor system of claim 6, further comprising a space disposed between the chamber sidewall and the susceptor outer surface such that the reaction space and the lower chamber space of the reaction chamber are in fluid communication through the space.

8. The reactor system of claim 6 , wherein fluid flow is restricted between the chamber sidewall and the outer surface of the susceptor.

9. 2. The reactor system of claim 1, wherein the lift pins comprise upper ends of the pin bodies, and the lift pins and the susceptor are configured to move relative to one another such that the upper ends of the lift pin bodies can protrude from a substrate support surface of the susceptor.

10. A lift pin configured to be disposed within a susceptor included within a reactor system, the lift pin comprising: a pin body defined by an outer pin surface and a pin head disposed at an upper end of the pin body; A lift pin, the lift pin comprising a pin channel defined by pin channel surfaces disposed on an outer circumferential surface of the pin body and an outer circumferential surface of the pin head and extending along a length of the pin body and the pin head.

11. The lift pin of claim 10 , wherein the pin channel extends linearly and parallel to an axis along which the pin body extends.

12. The lift pin of claim 10 , wherein the pin exterior surface defines a cross-sectional shape that includes a missing geometric shape, the pin channel being the missing portion.

13. creating a pressure differential in the reaction chamber of a reactor between a reaction space of the reaction chamber and a lower chamber space of the reaction chamber, the reaction space and the lower chamber space being separated by a susceptor disposed in the reaction chamber; creating a pressure differential such that a lower chamber space pressure is lower than a reaction space pressure; in response to generating the pressure differential, flowing a fluid through a pin hole disposed in the susceptor into the lower chamber volume and extending between the reaction volume and the lower chamber volume; a lift pin is disposed within the pin hole, the lift pin having a pin body and a pin head provided at an upper end of the pin body, the lift pin being disposed on an outer peripheral surface of the pin body and an outer peripheral surface of the pin head, the pin channel extending along the length of the pin body and the pin head, and flowing a fluid to extend therethrough, such that when the lift pin is disposed within the pin hole, the reaction space is fluidly connected to the lower chamber space via the pin channel.

14. a substrate is disposed on a substrate support surface of the susceptor, the substrate support surface facing the reaction space, and the pin hole is disposed through the substrate support surface; generating a suction force on the substrate toward the substrate support surface in response to the generating the pressure differential and forcing the fluid to flow from the reaction space through the pinhole into the lower chamber space; The method of claim 13 , further comprising: in response to said generating said suction force on said substrate, placing said substrate flat on said substrate support surface.

15. The method of claim 13 , wherein the creating the pressure differential is accomplished by a vacuum source fluidly connected to the lower chamber volume.

16. The method of claim 13 , wherein the pin body includes a cross-sectional shape that is missing a portion, and the pin channel is the missing portion.

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