Wafer placement table

Abstract

A wafer placement stand 10 is equipped with a ceramic substrate 20 which has a wafer placement surface 22a on the top surface thereof and integrally houses an electrode 26 therein, a cooling substrate 30 which has a coolant channel 32 formed therein and is formed from a metal-ceramic composite material, and a metal joining layer 40 which joins the bottom surface of the ceramic substrate 20 to the top surface of the cooling substrate 30. The thickness of the portion of the cooling substrate 30 which is below the coolant channel 32 thereof is at least 13mm, or is at least 43% of the thickness of the cooling substrate 30 overall.

Description

[Technical field]

[0001] The present invention relates to a wafer stage. [Background technology]

[0002] Conventionally, a wafer mounting table is known in which a ceramic base material such as alumina in which an electrostatic adsorption electrode is embedded and a cooling base material made of a metal such as aluminum are bonded via a resin layer (see, for example, Patent Document 1). With such a wafer mounting table, the effect of the thermal expansion difference between the ceramic base material and the cooling base material can be alleviated by the resin layer. A wafer mounting table is also known in which a ceramic base material and a cooling base material having a coolant flow path are bonded using a metal bonding layer instead of a resin layer (see, for example, Patent Documents 2 and 3). Since the metal bonding layer has a higher thermal conductivity than the resin layer, it can realize the heat extraction ability required when processing a wafer with high-power plasma. On the other hand, since the metal bonding layer has a larger Young's modulus and a lower stress relaxation property than the resin layer, it is almost impossible to alleviate the effect of the thermal expansion difference between the ceramic base material and the cooling base material. Therefore, in Patent Documents 2 and 3, a metal matrix composite material (MMC) having a small difference in thermal expansion coefficient from the ceramic base material is used as the material of the cooling base material. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 4-287344 [Patent Document 2] Patent No. 5666748 [Patent Document 3] Patent No. 5666749 Summary of the Invention [Problem to be solved by the invention]

[0004] However, because MMC does not have the ductility of metals, if a large temperature difference occurs in the vertical direction in the part of the cooling substrate above the refrigerant flow path, stress may be generated in that part, causing it to break.

[0005] The present invention has been made to solve these problems, and its main object is to prevent damage due to stress in a wafer mounting table in which a ceramic base and a cooling base are bonded with a metal bonding layer. [Means for solving the problem]

[0006] [1] The wafer mounting table of the present invention comprises: a ceramic substrate having a wafer mounting surface on an upper surface thereof and incorporating an electrode; A cooling substrate made of a metal ceramic composite material having a coolant flow path formed therein; a metal bonding layer bonding the lower surface of the ceramic substrate and the upper surface of the cooling substrate; A wafer mounting table comprising: The thickness of the cooling substrate below the refrigerant flow path is 13 mm or more, or is 43% or more of the total thickness of the cooling substrate. It is of the following.

[0007] In this wafer mounting table, the thickness of the cooling substrate below the refrigerant flow path is 13 mm or more, or 43% or more of the total thickness of the cooling substrate. This makes the thickness of the cooling substrate above the refrigerant flow path relatively thin. Therefore, a large temperature difference is unlikely to occur in the vertical direction in the portion of the cooling substrate above the refrigerant flow path, and stress is unlikely to occur in that portion. Therefore, it is possible to prevent the portion of the cooling substrate above the refrigerant flow path from being damaged by stress.

[0008] In this specification, the present invention may be described using terms such as up / down, left / right, front / back, etc., but these terms are merely relative positional relationships. Therefore, when the orientation of the wafer mounting table is changed, up / down may become left / right and left / right may become up / down, but such cases are also included in the technical scope of the present invention.

[0009] [2] In the above-mentioned wafer mounting table (the wafer mounting table described in [1] above), it is preferable that the thickness of the cooling substrate below the refrigerant flow path is 15 mm or more or 49% or more of the total thickness of the cooling substrate. In this way, the thickness of the cooling substrate above the refrigerant flow path becomes relatively thinner, which makes it easier to prevent the portion of the cooling substrate above the refrigerant flow path from being damaged by stress.

[0010] [3] In the above-mentioned wafer stage (the wafer stage described in the above [1] or [2]), the thickness of the cooling base material above the refrigerant flow path is preferably 5 mm or less. In this way, the effect of the present invention can be significantly achieved.

[0011] [4] In another aspect, the wafer mounting table of the present invention comprises: a ceramic substrate having a wafer mounting surface on an upper surface thereof and incorporating an electrode; A cooling substrate made of a metal ceramic composite material having a coolant flow path formed therein; a metal bonding layer bonding the lower surface of the ceramic substrate and the upper surface of the cooling substrate; A wafer mounting table comprising: The thickness of the cooling substrate above the refrigerant flow path is 5 mm or less. It is of the following.

[0012] In this wafer mounting table, the thickness of the cooling base material above the refrigerant flow path is thin, so that a large temperature difference is unlikely to occur in the upper part of the cooling base material above the refrigerant flow path, and stress is unlikely to occur in that part. Therefore, it is possible to prevent the part of the cooling base material above the refrigerant flow path from being damaged by stress.

[0013] [5] In the above-mentioned wafer stage (the wafer stage described in the above [3] or [4]), the thickness of the cooling base material above the refrigerant flow path may be 3 mm or less. In this way, the effect of the present invention can be significantly obtained.

[0014] [6] In the above-mentioned wafer mounting table (the wafer mounting table described in any one of [1] to [5] above), the cooling base may have a flange portion on the underside thereof used for clamping the wafer mounting table, and it is preferable that the width of the flange portion is 3 mm or more or the outer diameter of the flange portion is 101.8% or more of the outer diameter of the ceramic base. In this way, when the flange portion of the wafer mounting table is clamped, the risk of warping or the like occurring in the wafer mounting table is reduced, the risk of damage to the product is reduced, and improved thermal uniformity can be expected.

[0015] [7] In the above-mentioned wafer stage (the wafer stage described in [6] above), it is more preferable that the width of the flange portion is 10 mm or more, or the outer diameter of the flange portion is 106% or more of the outer diameter of the ceramic base. This reduces the risk of warping and other defects, further reducing the risk of damage to the product, and further improving thermal uniformity.

[0016] [8] In the above-mentioned wafer mounting table (the wafer mounting table according to any one of the above [1] to [7]), the upper corners of the cross section of the coolant flow path may be rounded. This makes it possible to prevent cracks from occurring starting from the upper corners of the cross section of the coolant flow path.

[0017] [9] In the above-mentioned wafer mounting table (the wafer mounting table according to any one of the above [1] to [8]), the ceramic base may be an alumina base, and the metal ceramic composite material has an absolute value of a linear thermal expansion coefficient difference between the metal ceramic composite material and alumina at 40 to 570°C of 1×10 -6 / K or less. Examples of such metal ceramic composite materials include AlSiC and SiSiCTi. [Brief description of the drawings]

[0018] [Figure 1] FIG. 2 is a vertical cross-sectional view of the wafer mounting table 10 installed in the chamber 94. [Diagram 2] FIG. [Diagram 3]FIG. 2 is an explanatory diagram of symbols representing the dimensions of the wafer mounting table 10. [Figure 4] 5A to 5C are diagrams showing the manufacturing process of the wafer mounting table 10. [Diagram 5] FIG. 4 is a vertical cross-sectional view of another embodiment of the wafer mounting table 10. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] A preferred embodiment of the present invention will be described below with reference to the drawings. Fig. 1 is a vertical cross-sectional view of a wafer mounting table 10 installed in a chamber 94 (a cross-sectional view when cut along a plane including the central axis of the wafer mounting table 10), Fig. 2 is a plan view of the wafer mounting table 10, and Fig. 3 is an explanatory diagram of symbols representing the dimensions of the wafer mounting table 10. In this specification, "~" indicating a range of numerical values ​​is used to mean that the numerical values ​​before and after it are included as the lower limit and upper limit.

[0020] The wafer mounting table 10 is used for performing CVD, etching, and the like on a wafer W using plasma, and is fixed to a mounting plate 96 provided inside a semiconductor process chamber 94. The wafer mounting table 10 includes a ceramic base 20, a cooling base 30, and a metal bonding layer 40.

[0021] The ceramic base 20 has a central portion 22 having a circular wafer mounting surface 22a, and an outer peripheral portion 24 having an annular focus ring mounting surface 24a on the outer periphery of the central portion 22. Hereinafter, the focus ring may be abbreviated as "FR." A wafer W is mounted on the wafer mounting surface 22a, and a focus ring 78 is mounted on the FR mounting surface 24a. The ceramic base 20 is made of a ceramic material such as alumina or aluminum nitride. The FR mounting surface 24a is one step lower than the wafer mounting surface 22a.

[0022] The center portion 22 of the ceramic base material 20 incorporates a wafer adsorption electrode 26 on the side close to the wafer placement surface 22a. The wafer adsorption electrode 26 is formed of a material containing, for example, W, Mo, WC, MoC, etc. The wafer adsorption electrode 26 is a disk-shaped or mesh-shaped monopolar electrostatic adsorption electrode. The layer of the ceramic base material 20 above the wafer adsorption electrode 26 functions as a dielectric layer. A wafer adsorption DC power source 52 is connected to the wafer adsorption electrode 26 via a power supply terminal 54. The power supply terminal 54 is provided so as to pass through an insulating tube 55 disposed in a through hole that vertically penetrates the cooling base material 30 and the metal bonding layer 40, and reach the wafer adsorption electrode 26 from the lower surface of the ceramic base material 20. A low pass filter (LPF) 53 is provided between the wafer adsorption DC power source 52 and the wafer adsorption electrode 26.

[0023] The cooling substrate 30 is a disk member. A metal ceramic composite material is preferable as the material of the cooling substrate 30. Examples of the metal ceramic composite material include a metal matrix composite material (metal matrix composite, MMC) and a ceramic matrix composite material (ceramic matrix composite, CMC). The cooling substrate 30 has a coolant flow path 32 in which a coolant can circulate. The coolant flow path 32 is connected to a coolant supply path and a coolant discharge path (not shown), and the coolant discharged from the coolant discharge path is returned to the coolant supply path after being temperature-adjusted. The coolant flowing through the coolant flow path 32 is preferably a liquid, and is preferably electrically insulating. Examples of electrically insulating liquids include fluorine-based inert liquids. An upper corner 32a of the cross section of the coolant flow path 32 has an R-surface. The radius of curvature of the R-surface is preferably, for example, 0.5 to 2 mm. The composite material used for the cooling substrate 30 has an absolute value of 1×10 between the linear thermal expansion coefficient at 40 to 570°C and the ceramic material used for the ceramic substrate 20. -6 / K or less, and preferably 0.5×10 -6 / K or less is more preferable, and 0.2×10 -6 / K or less. Specific examples of metal ceramic composite materials include materials containing Si, SiC, and Ti, materials in which a porous SiC body is impregnated with Al and / or Si, and composite materials of Al2O3 and TiC. A material containing Si, SiC, and Ti is called SiSiCTi, a material in which a porous SiC body is impregnated with Al is called AlSiC, and a material in which a porous SiC body is impregnated with Si is called SiSiC. When the ceramic substrate 20 is an alumina substrate, AlSiC, SiSiCTi, and the like are preferable as composite materials used for the cooling substrate 30. The linear thermal expansion coefficient at 40 to 570°C for alumina is 7.7×10 -6 / K, and AlSiC is 7.5×10 -6 / K, and SiSiCTi is 7.8×10 -6 / K. The cooling base 30 is connected to an RF power supply 62 via a power supply terminal 64. A high-pass filter (HPF) 63 is disposed between the cooling base 30 and the RF power supply 62. The cooling base 30 has a flange portion 34 on the lower surface side, which is used to clamp the wafer stage 10 to a mounting plate 96.

[0024] As shown in FIG. 3, the thickness t1 of the cooling substrate 30 below the refrigerant flow passage 32 is 13 mm or more, or 43% or more of the total thickness B of the cooling substrate 30. This thickness t1 is preferably 15 mm or more, or 49% or more of the thickness B. The thickness t2 of the cooling substrate 30 above the refrigerant flow passage 32 is preferably 5 mm or less, and more preferably 3 mm or less. In addition, the thickness t2 is preferably 1 mm or more in consideration of processability. The width w of the flange portion 34 is preferably 3 mm or more, and more preferably 10 mm or more. The outer diameter C of the flange portion 34 is preferably 101.8% or more of the outer diameter A of the ceramic substrate 20, and more preferably 106% or more.

[0025] The metal bonding layer 40 bonds the lower surface of the ceramic base material 20 and the upper surface of the cooling base material 30. The metal bonding layer 40 may be, for example, a layer formed of solder or a metal brazing material. The metal bonding layer 40 is formed, for example, by TCB (thermal compression bonding). TCB refers to a known method in which a metal bonding material is sandwiched between two members to be bonded, and the two members are pressure-bonded while being heated to a temperature equal to or lower than the solidus temperature of the metal bonding material.

[0026] The side surface of the outer periphery 24 of the ceramic substrate 20, the outer periphery of the metal bonding layer 40, and the side surface of the cooling substrate 30 are covered with an insulating film 42. The insulating film 42 may be, for example, a sprayed film of alumina, yttria, or the like.

[0027] The wafer mounting table 10 is attached to a mounting plate 96 provided inside a chamber 94 by using a clamp member 70. The clamp member 70 is an annular member having a cross section in a substantially inverted L-shape, and has an inner peripheral step surface 70a. The wafer mounting table 10 and the mounting plate 96 are integrated by the clamp member 70. With the inner peripheral step surface 70a of the clamp member 70 placed on the flange portion 34 of the cooling substrate 30 of the wafer mounting table 10, a bolt 72 is inserted from the upper surface of the clamp member 70 and screwed into a screw hole provided on the upper surface of the mounting plate 96. The bolt 72 is attached to a plurality of locations (e.g., 8 locations or 12 locations) that are provided at equal intervals along the circumferential direction of the clamp member 70. The clamp member 70 and the bolt 72 may be made of an insulating material or a conductive material (metal, etc.).

[0028] Next, a manufacturing example of the wafer mounting table 10 will be described with reference to Fig. 4. Fig. 4 is a manufacturing process diagram of the wafer mounting table 10. First, a disk-shaped ceramic sintered body 120, which is the base of the ceramic substrate 20, is produced by hot-pressing and firing a ceramic powder compact (Fig. 4A). The ceramic sintered body 120 has a built-in wafer adsorption electrode 26. Next, a hole 27 is made from the bottom surface of the ceramic sintered body 120 to the wafer adsorption electrode 26 (Fig. 4B), and a power supply terminal 54 is inserted into the hole 27 to join the power supply terminal 54 and the wafer adsorption electrode 26 (Fig. 4C).

[0029] In parallel with this, two disk members 131, 136 are produced (FIG. 4D), and a groove 132 that will eventually become the refrigerant flow path 32 is formed on the lower surface of the upper disk member 131, while through holes 134, 138 that penetrate vertically are formed in both disk members 131, 136 (FIG. 4E). The disk members 131, 136 are made of a metal ceramic composite material. When the ceramic sintered body 120 is made of alumina, the disk members 131, 136 are preferably made of SiSiCTi or AlSiC. This is because the thermal expansion coefficient of alumina is roughly the same as that of SiSiCTi or AlSiC.

[0030] The disk member made of SiSiCTi can be produced, for example, as follows. That is, first, a powder mixture is produced that contains 39-51 mass% silicon carbide raw material particles having an average particle size of 10 μm or more and 25 μm or less, and contains one or more raw materials selected to contain Ti and Si, and has a mass ratio of Si / (Si+Ti) of 0.26-0.54 for Si and Ti derived from the raw materials other than silicon carbide. For example, silicon carbide, metal Si, and metal Ti can be used as the raw materials. In this case, it is preferable to mix silicon carbide at 39-51 mass%, metal Si at 16-24 mass%, and metal Ti at 26-43 mass%. Next, the obtained powder mixture is uniaxially pressed to produce a disk-shaped molded body, and the molded body is sintered at 1370-1460°C by hot pressing in an inert atmosphere to obtain a disk member made of SiSiCTi.

[0031] Next, a metal bonding material is placed between the lower surface of the upper disc member 131 and the upper surface of the lower disc member 136, and a metal bonding material is placed on the upper surface of the upper disc member 131. Each metal bonding material is provided with a through hole communicating with the through holes 134, 138. The power supply terminal 54 of the ceramic sintered body 120 is inserted into the through holes 134, 138 of the disc members 131, 136, and the ceramic sintered body 120 is placed on the metal bonding material placed on the upper surface of the upper disc member 131. This results in a laminate in which the lower disc member 136, the metal bonding material, the upper disc member 131, the metal bonding material, and the ceramic sintered body 120 are laminated in this order from below. The laminate is heated and pressurized (TCB) to obtain the bonded body 110 (FIG. 4F). The bonded body 110 is formed by bonding the ceramic sintered body 120 to the upper surface of the block 130 that is the base of the cooling substrate 30 via the metal bonding layer 40. The block 130 is formed by joining an upper disk member 131 and a lower disk member 136 via a metal joining layer 135. The block 130 has a coolant flow path 32 therein.

[0032] TCB is carried out, for example, as follows. That is, the laminate is pressed and bonded at a temperature equal to or lower than the solidus temperature of the metal bonding material (for example, at a temperature equal to or higher than the solidus temperature minus 20°C and equal to or lower than the solidus temperature), and then returned to room temperature. As a result, the metal bonding material becomes a metal bonding layer. As the metal bonding material, an Al-Mg based bonding material or an Al-Si-Mg based bonding material can be used. For example, when TCB is carried out using an Al-Si-Mg based bonding material (containing 88.5% by weight of Al, 10% by weight of Si, and 1.5% by weight of Mg, and having a solidus temperature of about 560°C), the laminate is pressed at 0.5 to 2.0 kg / mm ​​in a vacuum atmosphere while heated to 540 to 560°C. 2 It is preferable to use a metal bonding material with a thickness of about 100 μm.

[0033] Next, the outer periphery of the ceramic sintered body 120 is cut to form a step, thereby forming the ceramic base material 20 having the central portion 22 and the outer periphery portion 24. The outer periphery of the block 130 is cut to form a step, thereby forming the cooling base material 30 having the flange portion 34. An insulating tube 55 through which the power supply terminal 54 is inserted is placed in the through holes 134, 138 and the hole in the metal bonding material. Furthermore, the insulating film 42 is formed by spraying the side surface of the outer periphery portion 24 of the ceramic base material 20, the periphery of the metal bonding layer 40, and the side surface of the cooling base material 30 with ceramic powder (FIG. 4G). In this way, the wafer mounting table 10 is obtained.

[0034] Although the cooling substrate 30 in FIG. 1 is shown as an integrated component, it may have a structure in which two components are joined by a metal joining layer as shown in FIG. 4G, or a structure in which three or more components are joined by a metal joining layer.

[0035] Next, an example of use of the wafer stage 10 will be described with reference to Fig. 1. As described above, the wafer stage 10 is fixed to the mounting plate 96 of the chamber 94 by the clamp members 70. A shower head 98 is disposed on the ceiling surface of the chamber 94, which ejects process gas into the chamber 94 from a number of gas injection holes.

[0036] A focus ring 78 is placed on the FR mounting surface 24a of the wafer mounting table 10, and a disk-shaped wafer W is placed on the wafer mounting surface 22a. The focus ring 78 has a step along the inner circumference of the upper end so as not to interfere with the wafer W. In this state, a DC voltage from the wafer suction DC power supply 52 is applied to the wafer suction electrode 26 to suction the wafer W onto the wafer mounting surface 22a. Then, the interior of the chamber 94 is set to a predetermined vacuum atmosphere (or reduced pressure atmosphere), and an RF voltage from the RF power supply 62 is applied to the cooling substrate 30 while a process gas is supplied from the shower head 98. Then, plasma is generated between the wafer W and the shower head 98. Then, the plasma is used to perform CVD film formation or etching on the wafer W. The focus ring 78 is also worn out as the wafer W is plasma-processed, but since the focus ring 78 is thicker than the wafer W, the focus ring 78 is replaced after processing a plurality of wafers W.

[0037] When processing the wafer W with high-power plasma, it is necessary to efficiently cool the wafer W. In the wafer mounting table 10, a metal bonding layer 40 with high thermal conductivity is used as a bonding layer between the ceramic base material 20 and the cooling base material 30, instead of a resin layer with low thermal conductivity. Therefore, the ability to draw heat from the wafer W (heat extraction ability) is high. In addition, since the difference in thermal expansion between the ceramic base material 20 and the cooling base material 30 is small, even if the stress relaxation property of the metal bonding layer 40 is low, problems are unlikely to occur. Furthermore, in this embodiment, the arrangement of the refrigerant flow path 32 in the cooling base material 30 made of a metal ceramic composite material is devised to suppress the generation of stress in the part of the cooling base material 30 above the refrigerant flow path 32.

[0038] In the wafer mounting table 10 described above, the thickness t1 of the cooling substrate 30 below the refrigerant flow path 32 is 13 mm or more, or 43% or more of the total thickness B of the cooling substrate 30. As a result, the thickness t2 of the cooling substrate 30 above the refrigerant flow path 32 is relatively thin. Therefore, a large temperature difference is unlikely to occur in the vertical direction in the portion of the cooling substrate 30 above the refrigerant flow path 32, and stress is unlikely to occur in that portion. Therefore, it is possible to prevent the portion of the cooling substrate 30 above the refrigerant flow path 32 from being damaged by stress. In addition, the rigidity of the portion of the cooling substrate 30 below the refrigerant flow path 32 is improved.

[0039] Furthermore, it is preferable that the thickness t1 of the cooling substrate 30 below the refrigerant flow path 32 is 15 mm or more, or 49% or more of the overall thickness B of the cooling substrate 30. In this way, the thickness t2 of the cooling substrate 30 above the refrigerant flow path 32 becomes relatively thinner, which makes it easier to prevent the portion of the cooling substrate 30 above the refrigerant flow path 32 from being damaged by stress.

[0040] Furthermore, the thickness t2 of the cooling substrate 30 above the coolant flow path 32 is preferably 5 mm or less. This makes it possible to obtain the above-mentioned effects more significantly. If the thickness t2 is 3 mm or less, the above-mentioned effects can be obtained even more significantly.

[0041] Furthermore, it is preferable that the width w of the flange portion 34 is 3 mm or more, or the outer diameter C of the flange portion 34 is 101.8% or more of the outer diameter A of the ceramic substrate 20. In this way, when the flange portion 34 of the wafer stage 10 is clamped by the clamp member 70, the risk of warping or the like occurring in the wafer stage 10 is reduced, the risk of damage to the product is reduced, and improved thermal uniformity can be expected. In this case, it is more preferable that the width w of the flange portion 34 is 10 mm or more, or the outer diameter C of the flange portion 34 is 106% or more of the outer diameter A of the ceramic substrate 20. In this way, the risk of warping or the like occurring is further reduced, the risk of damage to the product is further reduced, and improved thermal uniformity can be expected.

[0042] Furthermore, upper corners 32a of the cross section of the coolant flow path 32 are rounded, which makes it possible to prevent cracks from occurring starting from the corners 32a.

[0043] Furthermore, when the ceramic substrate 20 is an alumina substrate, the metal ceramic composite material is preferably AlSiC or SiSiCTi, because the absolute value of the difference in linear thermal expansion coefficient between AlSiC and alumina at 40 to 570° C. is small.

[0044] It goes without saying that the present invention is not limited to the above-described embodiment, and can be embodied in various forms within the technical scope of the present invention.

[0045] For example, in the wafer mounting table 10 of the above-described embodiment, holes may be provided penetrating the wafer mounting table 10 from the lower surface of the cooling substrate 30 to the wafer mounting surface 22a. Examples of such holes include gas supply holes for supplying a thermally conductive gas (e.g., He gas) to the rear surface of the wafer W, and lift pin holes for inserting lift pins for moving the wafer W up and down relative to the wafer mounting surface 22a. The thermally conductive gas is supplied to a space formed by the wafer W and a large number of small protrusions (not shown) provided on the wafer mounting surface 22a. When the wafer W is supported by, for example, three lift pins, the lift pin holes are provided in three locations.

[0046] In the wafer mounting table 10 of the embodiment described above, the height of the flange portion 34 of the cooling substrate 30 is lower than the bottom surface of the coolant flow path 32, but as shown in Fig. 5, the height of the flange portion 34 of the cooling substrate 30 may be higher than the bottom surface of the coolant flow path 32. This increases the rigidity of the cooling substrate 30, making it easier to prevent the wafer mounting table 10 clamped to the installation plate 96 by the clamp members 70 from warping.

[0047] In the above-described embodiment, the wafer attracting electrode 26 is built into the center portion 22 of the ceramic base material 20. Instead of or in addition to this, an RF electrode for generating plasma may be built into the ceramic base material 20. In this case, a high-frequency power source is connected to the RF electrode. Also, a focus ring (FR) attracting electrode may be built into the outer circumferential portion 24 of the ceramic base material 20. In this case, a DC power source is connected to the FR attracting electrode.

[0048] In the above-described embodiment, the ceramic sintered body 120 in FIG. 4A was produced by hot-press sintering a ceramic powder compact. However, the compact may be produced by stacking a plurality of tape compacts, by a mold casting method, or by compressing ceramic powder. EXAMPLES

[0049] EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to the following examples in any way.

[0050] [Experimental Examples 1-5] As Experimental Examples 1 to 5, the above-mentioned wafer mounting table 10 was analyzed by FEM (finite element method) with different dimensions. Experimental Examples 1 to 5 had the following in common. The ceramic base material 20 was an alumina base material, with the diameter of the central portion 22 being 296 [mm], the overall outer diameter A being 335.8 [mm], and the overall thickness being 4.6 [mm]. The cooling base material 30 was made of SiSiCTi, with the overall thickness B being 30.12 [mm], and the distance from the upper surface of the cooling base material 30 to the upper surface of the flange portion 34 being 7.6 [mm]. The cross section of the coolant flow path 32 was 12.12 [mm] in length (height), 8 [mm] in width (width), and the radius of curvature of the upper corner portion 32a was 1 [mm]. The metal bonding layer 40 was made of an Al-containing bonding material, and had a thickness of 0.12 [mm].

[0051] For the thickness t1 of the cooling substrate 30 below the refrigerant flow path 32, the thickness t2 of the cooling substrate 30 above the refrigerant flow path 32, and the width w of the flange portion 34, the values ​​shown in Table 1 were used for each experimental example. Table 1 also shows the ratio t1 / B [%] of the thickness t1 to the overall thickness B of the cooling substrate 30, the ratio w / A [%] of the width w of the flange portion 34 to the outer diameter A of the ceramic substrate 20, and the ratio C / A [%] of the outer diameter C of the flange portion 34 to the outer diameter A of the ceramic substrate 20.

[0052] In the experimental examples 1 to 5, the heat input to the wafer mounting surface 22a was set to 210 [kW / m 2 The maximum stress [MPa] in the cross section of the coolant flow path 32 was calculated by FEM when the temperature of the coolant flowing through the coolant flow path 32 was 55 [°C], the target temperature of the wafer mounting surface 22a was 100 [°C], and the pressing load of the clamp member 70 on the flange portion 34 was 90,000 [N], and the evaluation was based on the maximum stress [MPa]. The results are shown in Table 1.

[0053] [Table 1]

[0054] In Experimental Examples 1 to 3, the width w of the flange portion 34 is the same at 3 mm, but the thickness t1 is different. From the results in Table 1, Experimental Examples 2 and 3, in which t1 is 13 mm or more (t1 / B is 43.2% or more), have a maximum stress that is 10% or more smaller than that of Experimental Example 1, in which t1 is 8 mm (t1 / B is 26.6%). Also, Experimental Example 3, in which t1 is 15 mm, has a maximum stress that is smaller than that of Experimental Example 2, in which t1 is 13 mm. When Experimental Examples 1 and 2 were actually manufactured and used under the above-mentioned conditions, cracks occurred in Experimental Example 1, whereas no cracks occurred in Experimental Example 2.

[0055] The temperature of the wafer placement surface of the ceramic substrate 20, the temperature of the upper surface of the cooling substrate 30, and the upper and lower temperature difference of the upper part of the cooling substrate 30 above the refrigerant flow path 32 are as shown in Table 1. The upper surface temperature of the cooling substrate 30 is the temperature of the bonding interface between the cooling substrate 30 and the metal bonding layer 40. The upper and lower temperature difference of the upper part of the cooling substrate 30 above the refrigerant flow path 32 is the difference between the temperature of the bonding interface between the cooling substrate 30 and the metal bonding layer 40 and the temperature of the ceiling surface of the cooling substrate 30 above the refrigerant flow path 32. From these results, it can be seen that the thicker t1 (in other words, the thinner t2) is, the smaller the upper and lower temperature difference of the upper part of the cooling substrate 30 above the refrigerant flow path 32 is. Therefore, the reason why the maximum stress is smaller as t1 is thicker is considered to be partly because the thicker t1 is, the smaller the upper and lower temperature difference of the upper part of the cooling substrate 30 above the refrigerant flow path 32 is, and stress is less likely to occur in that part.

[0056] Experimental Examples 2 and 4 have the same thickness t1 of 13 mm, but differ in the width w of the flange portion 34. From the results in Table 1, the maximum stress was smaller in Experimental Example 4, in which the width w of the flange portion 34 was 10 mm (w / A was 3.0%, C / A was 106.0%), than in Experimental Example 2, in which the width w of the flange portion 34 was 3 mm (w / A was 0.9%, C / A was 101.8%).

[0057] Experimental Examples 3 and 5 have the same thickness t1 of 15 mm, but differ in the width w of flange portion 34. The results in Table 1 show that Experimental Example 5, in which the width w of flange portion 34 is 10 mm (w / A is 3.0%, C / A is 106.0%), has a smaller maximum stress than Experimental Example 3, in which the width w of flange portion 34 is 3 mm (w / A is 0.9%, C / A is 101.8%). Experimental Example 5 had the lowest maximum stress among Experimental Examples 1 to 5.

[0058] [Experimental Examples 6 and 7] Experimental Example 6 was the same as Experimental Example 1 except that AlSiC was used instead of SiSiCTi as the metal ceramic composite material of the cooling substrate 30, and Experimental Example 7 was the same as Experimental Example 5 except that AlSiC was used instead of SiSiCTi as the metal ceramic composite material of the cooling substrate 30. For Experimental Examples 6 and 7, the maximum stress was calculated and evaluated in the same manner as Experimental Examples 1 to 5, and the temperature of the wafer mounting surface of the ceramic substrate 20, the temperature of the upper surface of the cooling substrate 30, and the temperature difference between the top and bottom of the upper part of the refrigerant flow path 32 of the cooling substrate 30 were calculated. The results are shown in Table 1. The maximum stress of Experimental Example 7 was significantly smaller than that of Experimental Example 6.

[0059] As shown in Table 1, Experimental Examples 1 and 6 were evaluated as "poor," Experimental Examples 2 to 4 were evaluated as "good," and Experimental Examples 5 and 7 were evaluated as "particularly good." Experimental Examples 1 and 6 correspond to comparative examples, and Experimental Examples 2 to 5 and 7 correspond to examples of the present invention.

[0060] This application claims priority from Japanese Patent Application No. 2021-146681, filed on September 9, 2021, the entire contents of which are incorporated herein by reference. [Industrial Applicability]

[0061] The present invention can be used in, for example, semiconductor manufacturing equipment. [Explanation of symbols]

[0062] 10 wafer mounting table, 20 ceramic substrate, 22 center portion, 22a wafer mounting surface, 24 outer periphery, 24a focus ring mounting surface, 26 wafer adsorption electrode, 27 hole, 30 cooling substrate, 32 coolant flow path, 32a corner portion, 34 flange portion, 40 metal bonding layer, 42 insulating film, 52 wafer adsorption DC power source, 53 low pass filter, 54 power supply terminal, 55 insulating tube, 62 RF power source, 63 high pass filter, 64 power supply terminal, 70 clamp member, 70a inner peripheral step surface, 72 bolt, 78 focus ring, 94 chamber, 96 installation plate, 98 shower head, 110 joint, 120 ceramic sintered body, 130 block, 131, 136 disk member, 132 groove, 134, 138 through hole, 135 metal bonding layer.

Claims

1. a ceramic substrate having a wafer mounting surface on an upper surface thereof and incorporating an electrode; A cooling substrate made of a metal ceramic composite material having a coolant flow path formed therein; a metal bonding layer bonding the lower surface of the ceramic substrate and the upper surface of the cooling substrate; A wafer mounting table comprising: The thickness of the cooling substrate below the refrigerant flow path is constant and is 13 mm or more or 43% or more of the entire thickness of the cooling substrate; The thickness of the cooling substrate above the refrigerant flow path is constant and is 5 mm or less or 16.6% or less of the total thickness of the cooling substrate. Wafer placement stage.

2. The thickness of the cooling substrate below the refrigerant flow path is 15 mm or more or 49% or more of the entire thickness of the cooling substrate. The wafer stage according to claim 1 .

3. The thickness of the cooling substrate above the refrigerant flow path is 3 mm or less. The wafer stage according to claim 1 .

4. the cooling base has a flange portion on a lower surface thereof for clamping the wafer stage, the flange portion having a width of 3 mm or more, or an outer diameter of the flange portion being 101.8% or more of an outer diameter of the ceramic base; The wafer stage according to claim 1 .

5. The width of the flange portion is 10 mm or more, or the outer diameter of the flange portion is 106% or more of the outer diameter of the ceramic base material. The wafer stage according to claim 4 .

6. The upper corner of the cross section of the refrigerant flow path is rounded. The wafer stage according to claim 1 .

7. The metal ceramic composite material has an absolute value of 1×10 difference in linear thermal expansion coefficient at 40 to 570° C. from the ceramic material constituting the ceramic substrate. -6 / K or less, The wafer stage according to claim 1 .

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