Optoelectronics Semiconductor Components

Abstract

The present invention presents an optoelectronic semiconductor component (100) comprising at least one optoelectronic semiconductor chip (10) in an interior space (29) of a housing (20), the housing having a bottom (21) and a cover part (22), the bottom part being configured as a ceramic support, the cover part being formed from one or more glass materials, a connection layer (23) consisting of a glass solder being arranged between the bottom part and the cover part, the ceramic support having a connection region (210) with a nickel-containing surface (211) that is in direct contact with the glass solder.

Description

[Technical field]

[0001] The present invention presents an optoelectronic semiconductor component. [Background technology]

[0002] This patent application claims priority to US Patent No. 6,399,633, the disclosure of which is incorporated herein by reference.

[0003] In expensive and sensitive microelectronics, airtight housings are usually used to protect electronic components from harmful environmental influences. For example, laser diodes, but also other electronic modules, especially optoelectronic modules, are mounted in airtight housings. Such housings also form connections, especially electronic connections, connecting the components arranged therein to the external environment.

[0004] For example, ceramic housings are known in which a base plate, a frame mounted on the base plate, and a cover mounted on the frame, which may be transparent depending on the type of module to be mounted in the housing, are each connected to one another by means of a metal solder layer. For example, gold-tin solder can be used. However, for such a solder connection, all surfaces to be connected must have a metallization in the connection area, where two of these metallizations must be coated with gold-tin solder. Side-emitting components usually have, for example, a base plate as a housing, to which a metal cap with an integrated glass window is attached by soldering or welding. These known housing solutions are time-consuming and therefore expensive to manufacture. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] German Patent Application No. 102021109968.4 Summary of the Invention [Problem to be solved by the invention]

[0006] At least one objective of certain embodiments is to provide an optoelectronic semiconductor component.

[0007] This problem is solved by the subject matter of the invention as set forth in the independent claims, advantageous embodiments and developments of which are characterized in the respective dependent claims and can be taken further from the following description and the drawings.

[0008] In at least one embodiment, the optoelectronic semiconductor component has at least one optoelectronic semiconductor chip in the interior space of the housing. In particular, the at least one optoelectronic semiconductor chip can be a semiconductor chip that can be sensitive to substances from the surrounding atmosphere, such as moisture and / or oxygen. For example, the at least one optoelectronic semiconductor chip can be a semiconductor laser diode. It should be noted that the following description focuses on the embodiment of the optoelectronic semiconductor chip as a semiconductor laser diode, but other embodiments of the semiconductor chip are possible instead, such as superluminescent diodes (SLEDs), light emitting diodes (LEDs), photodiodes or other optoelectronic semiconductor chips. Furthermore, the following description focuses on an optoelectronic semiconductor component with one optoelectronic semiconductor chip, but the optoelectronic semiconductor component can also have a plurality of the same or different optoelectronic semiconductor chips and / or further electronic components in the housing.

[0009] Particularly preferably, the housing is configured to be airtightly closed. The interior space of the housing can therefore be separated from the environment, preferably airtightly closed, by the housing. "Airtight" or "tightly closed" can mean here and in the following that harmful substances or other harmful influences, in particular from the environment, cannot reach the interior space, for example to such an extent that harmful effects are caused in the course of a normally expected or specified life span.

[0010] In another embodiment, the housing has a bottom and a cover. A connection layer is preferably arranged between the bottom and the cover, by which the cover is attached to the bottom and thus fixed. The interior space of the housing is enclosed by the bottom, the cover and the connection layer. In particular, at least the bottom or the cover or both may have a recess, and when the bottom and the cover are combined and attached to each other by the connection layer, an interior space is formed. Particularly preferably, the interior space can be closed gas-tightly by the bottom, the connection layer and the cover.

[0011] At least one optoelectronic semiconductor chip is mounted on the bottom part and is preferably electrically connected. The arrangement direction of the at least one optoelectronic semiconductor chip on the bottom part is also referred to as the vertical direction in the following. A direction perpendicular to the vertical direction and which may be parallel to the main extension plane of the bottom part, in particular the mounting surface of the bottom part, is referred to as the lateral direction in the following.

[0012] To form an electrical contact to a component arranged in the housing, for example at least one optoelectronic semiconductor chip, the housing, particularly preferably the bottom, has at least one electrical contact element. The at least one electrical contact element can, for example, comprise or be formed by one or more conductor tracks, one or more electrical feedthroughs ("vias"), one or more lead frames or conductor frame parts, one or more electrode surfaces, and any combination of these, on one or more surfaces of the bottom and / or embedded in the bottom. In particular, the housing can have multiple electrical contact elements. For example, the bottom can have at least two vias as contact elements, each of which interconnects an electrode surface in the interior space with an electrode surface on the outer surface of the bottom opposite the interior space.

[0013] In another embodiment, the bottom part is configured as a ceramic support, in other words, the bottom part can have a ceramic material which, for example, has aluminum nitride or consists of aluminum nitride as the main component.

[0014] The ceramic carrier can preferably be a single-layer ceramic carrier or a multi-layer ceramic carrier. The single-layer ceramic carrier can be configured, for example, in the shape of a plate, thereby forming a base plate. The single-layer ceramic carrier can be formed by layers of ceramic material, which can further have contact elements, via which electrical contact connections to the at least one optoelectronic semiconductor chip from the outside can be made in the interior space of the housing. The multi-layer ceramic carrier can be formed from at least two or more layers of the same or different ceramic materials and which are stacked and sintered on top of one another to produce the base. For example, one of the layers forms the base plate on which the at least one optoelectronic semiconductor chip is mounted, and at least one further layer is configured in the shape of a frame and laterally surrounds the at least one optoelectronic semiconductor chip. The base can thus have a recess in which the at least one optoelectronic semiconductor chip is arranged.

[0015] Particularly preferably, the housing can be surface-mountable. The optoelectronic semiconductor component can therefore particularly preferably be a surface-mountable component, i.e. a so-called SMD component ("surface-mounted device"), which can be mounted on a support, for example on a printed circuit board, by soldering. Particularly preferably, the ceramic support can be surface-mountable.

[0016] According to another embodiment, the cover part is made of one or more glass materials. In other words, the cover part can be a glass cover, i.e. completely made of one or more glass materials. Particularly preferably, the cover part can comprise or consist of borosilicate glass.

[0017] Preferably, the base and the cover comprise materials with similar thermal expansion coefficients, for example, the base, particularly the ceramic material of the base, may have a first thermal expansion coefficient C1, and the cover, particularly the glass material or materials of the cover, may have a second thermal expansion coefficient C2, in which case the thermal expansion coefficient C2 is expressed as: |C1-C2| / <C1,C2> ≦0.90 or |C1-C2| / <C1,C2> ≦0.95 or |C1-C2| / <C1,C2> ≦0.99, where<C1,C2> represents the average value of C1 and C2.

[0018] Particularly preferably, the cover part may be completely light-transmitting. In this case, "light-transmitting" may mean at least translucent, preferably optically see-through, i.e. transparent. For example, the cover part may have an optical window arranged in the frame part. The frame part and the optical window may be made of the same glass material and may be, for example, fused to one another. It may furthermore be possible for the optical window to have a first glass material, whereas the frame part has a second glass material different from the first glass material. In this case too, the optical window may be fused to the frame part. Depending on the embodiment of the optoelectronic semiconductor component, the optical window may be arranged laterally next to the optoelectronic semiconductor chip or vertically above the optoelectronic semiconductor chip.

[0019] Furthermore, the cover part can have a recess in which the optoelectronic semiconductor chip is at least partially arranged, so that the cover part can, for example, cover the at least one optoelectronic semiconductor chip in a dome-like manner.

[0020] In another embodiment, the connection layer comprises a glass solder, particularly preferably consists of a glass solder. The glass solder can advantageously make it possible to compensate for roughness and other irregularities on the connection surface of the order of up to 20 μm or even more. In comparison with such glass solders, solder connections typically require significantly smaller roughness and other irregularities, for example in the range of 5 μm or less. Furthermore, the connection layer formed by the glass solder for attaching the cover part to the bottom can be directly adjacent to and in direct contact with the cover part. It is therefore not necessary to provide the cover part with an adhesion-promoting layer, such as a metallization, which is required in the case of a solder connection.

[0021] In another embodiment, the base, in particular the ceramic support, has a connection region. The connection region is a region of the base, in particular the ceramic support, on which a connection layer is applied. Particularly preferably, the base, in particular the ceramic support, has a nickel-containing surface in the connection region, which can be in direct contact with the connection layer, i.e. in particular the glass solder. The nickel-containing surface can achieve a particularly good adhesion of the glass solder. For example, the nickel-containing surface can be formed by a nickel-containing layer. Particularly preferably, the nickel-containing layer can have a relative proportion of nickel of 95% by volume or more, based on the total volume of the nickel-containing layer.

[0022] The optoelectronic semiconductor component described herein has, according to the above-mentioned embodiments and features, preferably as a bottom part, a ceramic support in the form of a single-layer ceramic or multilayer ceramic. In particular, the design of the multilayer ceramic allows the production of fine 3D connection means that allow a very high density of I / O connections in a small form factor for feed-throughs and printed circuit boards alike. Due to the high thermal conductivity and heat resistance, ceramic materials are best suited for use. The ceramic design also allows solderable (SMD) modules. In conjunction with a glass window or a cover part as a glass window, such a structure also represents a housing that is particularly suitable for, for example, a laser emitter. A gas-tight connection between the bottom part and the cover part can be produced at low cost by means of a glass solder, which can be reliably deposited and fixed on the ceramic support by means of the nickel-containing surface of the ceramic support. Further advantages, advantageous embodiments and developments emerge from the exemplary embodiments described below with reference to the figures. [Brief description of the drawings]

[0023] [Figure 1] 1 is a schematic diagram illustrating an optoelectronic semiconductor component according to an embodiment; [Figure 2A] FIG. 11 is a schematic diagram showing a cover part according to another embodiment. [Figure 2B] FIG. 11 is a schematic diagram showing a cover part according to another embodiment. [Figure 2C] FIG. 11 is a schematic diagram showing a cover part according to another embodiment. [Figure 2D] FIG. 11 is a schematic diagram showing a cover part according to another embodiment. [Figure 2E] FIG. 11 is a schematic diagram showing a cover part according to another embodiment. [Figure 2F] FIG. 11 is a schematic diagram showing a cover part according to another embodiment. [Figure 3A] 2 is a schematic diagram showing an optoelectronic semiconductor component according to another embodiment. [Figure 3B]2 is a schematic diagram showing an optoelectronic semiconductor component according to another embodiment. [Figure 3C] 2 is a schematic diagram showing an optoelectronic semiconductor component according to another embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] In the examples and figures, identical, similar or identically functioning elements are respectively provided with the same reference numerals. The illustrated elements and their relative dimensional proportions are not drawn to scale, rather individual elements, such as layers, modules, elements and regions, are intentionally enlarged for better illustration and / or understanding.

[0025] In relation to the following figures, examples of an optoelectronic semiconductor component 100 and elements of this optoelectronic semiconductor component 100 are described. The optoelectronic semiconductor component 100 comprises an optoelectronic semiconductor chip 10 in a housing 20. In the following examples, the optoelectronic semiconductor component 100 is configured as a light-emitting semiconductor component with a semiconductor laser diode as the optoelectronic semiconductor chip 10, purely by way of example. Alternatively, other embodiments of the semiconductor chip are possible, such as superluminescent diodes (SLEDs), light-emitting diodes (LEDs), photodiodes or other optoelectronic semiconductor chips. Furthermore, it is also possible for the optoelectronic semiconductor component 100 to comprise a plurality of the same or different optoelectronic semiconductor chips 10 and / or other electronic components in the housing 20.

[0026] Particularly preferably, the housing 20 has a dimension of 5 cm or less, or 2 cm or less, or 1 cm or less, or 0.5 cm or less, or 0.3 cm or less. In other words, the optoelectronic semiconductor component 100 is preferably realized as a so-called semiconductor package.

[0027] At least one optoelectronic semiconductor chip 10, i.e. in the illustrated embodiment in particular at least one semiconductor laser diode, can have at least one active layer that is configured and arranged to generate light in an active region during operation. The active layer can in particular be part of a semiconductor stack with multiple semiconductor layers and can have a main extension perpendicular to the arrangement direction of the layers of the semiconductor stack. For example, the active layer can have exactly one active region. Furthermore, the semiconductor laser diode can also have multiple active regions in the active layer and / or multiple active layers, which are stacked one above the other in the semiconductor stack and can be connected to one another in series, for example via tunnel junctions.

[0028] The semiconductor layer sequence can be formed in particular as an epitaxial layer sequence, i.e. as an epitaxially grown semiconductor layer sequence. In this case, the semiconductor layer sequence can be formed, for example, based on InAlGaN. InAlGaN-based semiconductor layers are in particular epitaxially produced semiconductor layers which generally have layers of different individual layers and which are based on the InAlGaN-based semiconductor layer sequence of the III-V compound semiconductor material system. x Al y Ga 1-x-y N[0≦x≦1, 0≦y≦1 and x+y≦1]. In particular, the active layer may be based on such a material. A semiconductor layer sequence having at least one active layer based on InAlGaN can emit electromagnetic radiation, for example, preferably in the ultraviolet to green wavelength range.

[0029] Alternatively or additionally, the semiconductor layer sequence may be based on InAlGaP, i.e. the semiconductor layer sequence may have different individual layers, at least one of which, for example the active layer, is based on InAlGaP from the III-V compound semiconductor material system. x Al y Ga 1-x-yP[0≦x≦1, 0≦y≦1 and x+y≦1]. A semiconductor layer sequence having at least one active layer based on InAlGaP can emit electromagnetic radiation having one or more spectral components, preferably in the green to red wavelength range, for example.

[0030] Alternatively or additionally, the semiconductor stack may include other III-V compound semiconductor material systems, for example InAlGaAs-based materials, or may include II-VI compound semiconductor material systems. In particular, an active layer including an InAlGaAs-based material may be suitable for emitting electromagnetic radiation having one or more spectral components in the red to infrared wavelength range. The II-VI compound semiconductor material may include at least one element from group 2, such as Be, Mg, Ca, Sr, and group 6, such as O, S, Se. For example, the II-VI compound semiconductor material includes ZnSe, ZnTe, ZnO, ZnMgO, CdS, ZnCdS, and MgBeO.

[0031] The active layer, in particular the semiconductor layer sequence including this active layer, can be formed on a substrate. For example, the substrate can be formed as a growth substrate on top of which the semiconductor layer sequence is grown. The active layer and in particular the semiconductor layer sequence including this active layer can be produced by an epitaxy process, for example metalorganic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE). This can in particular mean that the semiconductor layer sequence is grown on the growth substrate. Furthermore, the semiconductor layer sequence can be provided with an electrical contact in the form of one or more contact elements. Furthermore, the growth substrate can also be removed after the growth process. In this case, the semiconductor layer sequence can also be transferred, for example after growth, onto a substrate formed as a carrier substrate. The substrate can comprise a semiconductor material, for example the compound semiconductor material system mentioned above or other materials. In particular, the substrate can comprise or consist of sapphire, GaAs, GaP, GaN, InP, SiC, Si, Ge and / or ceramic materials, for example SiN or AlN.

[0032] The active layer can have, for example, a conventional pn junction for light generation, a double heterostructure, a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure). In addition to the active layer, the semiconductor stack can contain other functional layers and regions, such as p-doped or n-doped charge carrier transport layers, i.e. electron transport layers or hole transport layers, undoped or p-doped or n-doped confinement layers, cladding layers or waveguiding layers, barrier layers, planarization layers, buffer layers, protective layers and / or electrode layers and any combinations of these. Furthermore, additional layers, such as buffer layers, barrier layers and / or protective layers, can be arranged perpendicular to the growth direction of the semiconductor stack, for example surrounding the semiconductor stack, i.e., for example on the sides of the semiconductor stack.

[0033] The optoelectronic semiconductor chip 10 can be configured, for example, as an edge-emitting semiconductor laser diode, in which the light generated in at least one active layer during operation is emitted via a side surface configured as a facet that can be formed perpendicular to the at least one active layer. Alternatively, the semiconductor laser diode can also be configured as a vertical-emitting laser diode, for example a VCSEL diode (VCSEL: “vertical-cavity surface-emitting laser”), in which the light generated in at least one active layer during operation is emitted via a surface of the semiconductor layer stack that is arranged parallel to the active layer. Furthermore, vertical-emitting semiconductor laser diodes, for example in the form of edge-emitting semiconductor laser diodes with integrated deflection optics, are also possible. FIG. 1 shows an embodiment in which the optoelectronic semiconductor chip 10 is configured as a vertical-emitting semiconductor laser diode, i.e. as a semiconductor laser diode with an upward emission in the illustrated diagram.

[0034] The housing 20 has a bottom part 21 and a cover part 22, as shown in FIG. 1. A connecting layer 23 is arranged between the bottom part 21 and the cover part 22, by means of which the cover part 22 is attached to the bottom part 21 and thus fixed. An internal space 29 of the housing 20 is enclosed by the bottom part 21, the cover part 22 and the connecting layer 23. In particular, at least the bottom part 21 or the cover part 22 or both may have a recess 28, by which the internal space 29 is formed when the bottom part 21 and the cover part 22 are combined and attached to each other by means of the connecting layer 23. Particularly preferably, the internal space 29 is closed in an airtight manner by the bottom part 21, the cover part 22 and the connecting layer 23.

[0035] In the embodiment shown in FIG. 1 and in the embodiments shown in FIGS. 2A, 2B, 2D-2F, 3A and 3B, the cover portion 22 has the recess 28, whereas in the embodiment of FIG. 3C, the bottom portion 21 is shown to have the recess 28.

[0036] The at least one optoelectronic semiconductor chip 10 is mounted on the base 21 in the interior space 29 and is preferably electrically connected. The arrangement direction of the at least one optoelectronic semiconductor chip 10 on the base 21 corresponds to the vertical direction. A direction perpendicular to the vertical direction and oriented parallel to the main extension plane of the base 21, in particular the mounting surface of the base 21, is referred to as the lateral direction.

[0037] The bottom part 21 is configured as a ceramic support and therefore comprises a ceramic material which, for example, has aluminum nitride as the main component or consists of aluminum nitride. The ceramic support can preferably be a single-layer ceramic support or a multi-layer ceramic support. The single-layer ceramic support can, for example, be formed in the shape of a plate, as shown in Figures 1, 3A and 3B, thereby forming a base plate.

[0038] A multilayer ceramic support, as shown for example in Fig. 3C, can be formed from at least two or more layers of the same or different ceramic materials, which are deposited on top of one another and sintered to produce the bottom part 21. In the embodiment shown in Fig. 3C, one of the layers forms a base plate with at least one optoelectronic semiconductor chip 10 mounted on top of it, while at least one further layer is configured in the form of a frame that laterally surrounds the at least one optoelectronic semiconductor chip 10, thereby forming a recess 28 in which the at least one optoelectronic semiconductor chip 10 is arranged.

[0039] Particularly preferably, the housing 10 can be surface-mountable. The optoelectronic semiconductor component 100 can therefore particularly preferably be a surface-mountable component, i.e. a so-called SMD component (SMD: “surface-mounted device”), which can be mounted on a support, for example on a printed circuit board, by means of soldering. Correspondingly, particularly preferably, the ceramic support can also be surface-mountable.

[0040] For the electrical contacting of components arranged in the housing 20, for example in particular the at least one optoelectronic semiconductor chip 10, the housing 20, particularly preferably the bottom part 21, has at least one electrical contact element 24. The at least one electrical contact element can for example comprise or be formed by one or more conductor tracks, one or more electrical feedthroughs ("vias"), one or more lead frames or conductor frame parts, one or more electrode surfaces and any combination of these on one or more surfaces of the bottom part and / or embedded in the bottom part. In particular, the housing 20 can have a plurality of electrical contact elements 24. For example, the bottom part 21 can have as contact element 24 at least two vias 241, which respectively interconnect an electrode surface 242 in the interior space and an electrode surface 242 on the outer surface of the bottom part 21 opposite the interior space, as shown in Fig. 1 and Figs. 3A-3C. The optoelectronic semiconductor chip 10 can be mounted directly on the electrode surface 242 as shown in Fig. 1, while the other side of the optoelectronic semiconductor chip 10 can be connected via bonding wires. The optoelectronic semiconductor chip 10 can also be mounted on a heat sink 30 as shown in Figs. 3A-3C and electrically connected via suitable bonding wire connections. Furthermore, other forms of electrical connection are also possible. Depending on the embodiment of the optoelectronic semiconductor chip 10 and / or in an optoelectronic semiconductor component with two or more optoelectronic semiconductor chips 10, more than two contact elements 24 can also be provided.

[0041] In the exemplary embodiment of the optoelectronic semiconductor component described in connection with FIG. 1 as a light-emitting semiconductor component with a vertical emission laser diode as the optoelectronic semiconductor chip 10, the cover 22 is configured to be transparent for light, in particular for light generated by the optoelectronic semiconductor chip 10, at least in the region 27 above the optoelectronic semiconductor chip 10. The entire cover 22 may also be light-transmitting. Particularly preferably, the cover 22 can be seen through clearly at least in the region 27 provided for light transmission, i.e. it can have maximum transparency. Alternatively or additionally, the cover 22 can be configured to have certain optical properties, for example light-scattering or light-refractive, at least in the region 27 provided for light transmission. For example, the region 27 can be configured as a lens. The cover portion 22 is formed from one or more glass materials. For example, the cover portion may be formed from a glass material, such as borosilicate glass.

[0042] The connection layer 23 comprises a glass solder, particularly preferably consists of a glass solder. The glass solder can compensate for roughness and other irregularities of the order of up to 20 μm or even more on the connection surface bordering the connection layer 23. The connection layer 23 formed by the glass solder for attaching the cover part 22 to the base part 21 borders directly on the cover part 22 and is therefore in direct contact with the cover part 22. An adhesion-promoting layer, such as a metallization, which is necessary in the case of a solder connection, is not required on the cover part 22. The connection layer can be applied to the base part 21 or to the cover part 22, for example, before the assembly. A permanent, preferably gas-tight connection between the base part 21 and the cover part 22 can be achieved by the action of heat and / or laser irradiation.

[0043] The bottom part 21, i.e. in particular the ceramic support of the bottom part 21, has a connection region 210. The connection region 210 is in particular the region of the ceramic support on which the connection layer 23 is applied. Particularly preferably, the bottom part 21 has a nickel-containing surface 211 in the connection region 210, which is in direct contact with the connection layer 23, i.e. in particular the glass solder. By means of the nickel-containing surface 211, a particularly good adhesion of the glass solder can be achieved. For example, the nickel-containing surface 211 can be formed by a nickel-containing layer 25. Particularly preferably, the nickel-containing layer 25 can have a relative proportion of nickel of 95% by volume or more, based on the total volume of this nickel-containing layer. The nickel-containing layer 25 can be, for example, vapour-deposited on the bottom part 21, in particular the ceramic support, or can be sintered together with the ceramic material of the ceramic support within the scope of the production process of the ceramic support.

[0044] Preferably, the base 21 and cover 22 are made of materials with similar thermal expansion coefficients, which can minimize stresses that may occur between the base 21 and cover 22 due to their different thermal expansion coefficients during temperature changes.

[0045] For example, the cover part 22 can be produced in the form of a composite of a number of successive cover parts in the context of a wafer-based process, which composite is then divided into the individual cover parts after production. For this purpose, for example, a silicon wafer can be provided, which forms a negative mold of the composite of the cover parts. A material can be selected as the glass material for the cover part 22, which has a softening temperature lower than the softening temperature of the negative mold. The glass material can be bonded to the negative mold, for example, in the form of a glass wafer. Structures and recesses in the negative mold can be provided, for example, by etching, which correspond to the three-dimensionally formed areas in the subsequent cover part 22. The three-dimensional forming of the cover part composite can be achieved by the action of heat and pressure.

[0046] The cover part 22 shown in FIG. 1 can be formed, for example, entirely from the same glass material. In FIGS. 2A to 3C, an embodiment is shown for the cover part 22 with an optical window 221 in the frame part 222. The optical window 221 here refers in particular to that part of the cover part 22 that has sufficient optical quality for the intended application of the optoelectronic semiconductor component 100. For example, in a composite-based production, a prefabricated optical window can be inserted into a negative mold and deformed under the action of heat and / or pressure when forming the frame part 222 with the frame material. In this case, a glass material with a lower softening point than the negative mold can be used for the frame part 222, whereas a glass material with a higher softening point than the glass material for the frame part 222 is used for the optical window 221.

[0047] Figures 2A and 2B each show a cover part 22 with a recess 28, which has an optical window 221 arranged above an optoelectronic semiconductor chip in an optoelectronic semiconductor component. As shown in Figure 2B, the above-described manufacturing method allows any shape of the cover part 22. Figure 2C shows, in comparison with the embodiment of Figures 2A and 2B, a cover part 22 formed in the shape of a plate without a recess.

[0048] As shown in Figures 2D-2F, the optical window 221 can also be arranged laterally, i.e. laterally, relative to at least one optoelectronic semiconductor chip in the optoelectronic semiconductor component. Here, as shown in Figure 2D, the optical window 221 can form part of a side wall of the cover part 22, where the cover part 22 contacts a connection layer in the optoelectronic semiconductor component. Furthermore, the optical window 221 can be integrated into a frame-like side wall, as shown in Figures 2E and 2F, in which case the connection region of the cover part 22 can be provided with a flange for connection to the connection layer, as shown in Figure 2F.

[0049] Figures 3A and 3B show an optoelectronic semiconductor component 100 configured as a side emitter with an edge-emitting laser diode as at least one optoelectronic semiconductor chip 10. The optoelectronic semiconductor component 100 of Figures 3A and 3B has, purely by way of example, a cover part 22 according to the embodiment of Figures 2D and 2F.

[0050] In Fig. 3C, an optoelectronic semiconductor component 100 is shown, purely by way of example, configured as a vertical emitter with a cover part 22 according to the embodiment of Fig. 2C. At least one optoelectronic semiconductor chip 10 is configured as an edge-emitting light-emitting semiconductor laser diode, as in the two embodiments described above. In order to deflect the laterally emitted light into the vertical direction, the optoelectronic semiconductor component 100 has a deflection element 40, for example in the form of a prism, which is attached to the base 21 in the illustrated embodiment.

[0051] The described optoelectronic semiconductor component 100 can be characterized by low cost, low requirements for the tolerances of the connected modules, low heat input during the manufacturing process, the use of known sub-processes with proven reliability for the most part, and good thermal conductivity, especially due to the use of AlN ceramic.

[0052] The features and embodiments described in connection with the figures may be combined with each other in other embodiments, even if not all combinations are explicitly described, and each embodiment described in connection with the figures may additionally or alternatively include other features throughout the specification.

[0053] The invention is not limited to the embodiments described herein, but rather includes all novel features and all combinations of features, including in particular combinations of features in the claims, even if not explicitly stated in the claims or examples by themselves. [Explanation of symbols]

[0054] 10 Optoelectronics Semiconductor Chips 20. Housing 21 Bottom 22 Cover part 23 Connection Layer 24 Contact element 25 layers 27 areas 28 Recess 29 Interior Space 30 Heat sink 40 Deflection element 100 Optoelectronics Semiconductor Components 210 Connection Area 211 Surface 221 Optical window 222 Frame section 241 Beer 242 Electrode surface

Claims

1. An optoelectronic semiconductor component (100), comprising: At least one optoelectronic semiconductor chip (10) is provided within an interior space (29) of a housing (20); - the housing has a bottom part (21) and a cover part (22), said bottom is constructed as a ceramic support, - said cover part is made from one or more glass materials; - between said bottom part and said cover part a connection layer (23) made of glass solder is arranged, - the ceramic support has a connection area (210) with a nickel-containing surface (211) in direct contact with the glass solder, The cover portion has an optical window (221) disposed within a frame portion (222). An optoelectronic semiconductor component (100).

2. 2. The optoelectronic semiconductor component according to claim 1, wherein the base has a recess (28) in which the optoelectronic semiconductor chip is arranged.

3. 3. The optoelectronic semiconductor component according to claim 2, wherein the bottom part is configured as a multilayer ceramic support.

4. 2. The optoelectronic semiconductor component according to claim 1, wherein the cover part has a recess in which the optoelectronic semiconductor chip is arranged.

5. 2. An optoelectronic semiconductor component as claimed in claim 1, wherein the cover part is completely light-transmitting.

6. 2. An optoelectronic semiconductor component as claimed in claim 1, wherein the optical window comprises a first glass material and the frame portion comprises a second glass material different from the first glass material.

7. 7. The optoelectronic semiconductor component according to claim 1 or 6, wherein the optical window is arranged laterally next to the optoelectronic semiconductor chip.

8. 7. An optoelectronic semiconductor component as claimed in claim 1 or 6, wherein the optical window is arranged vertically above the optoelectronic semiconductor chip.

9. 2. An optoelectronic semiconductor component as claimed in claim 1, wherein the cover part comprises at least a portion made of a glass material having a lower softening point than silicon.

10. 2. An optoelectronic semiconductor component according to claim 1, wherein the nickel-containing surface is formed by a nickel-containing layer (25).

11. 11. An optoelectronic semiconductor component according to claim 10, wherein the nickel-containing layer has a relative proportion of nickel of 95 volume % or more, based on the total volume of the nickel-containing layer.

12. 2. The optoelectronic semiconductor component according to claim 1, wherein the connection layer is in direct contact with the cover part.

13. 2. The optoelectronic semiconductor component according to claim 1, wherein the internal space is hermetically closed by the base, the connection layer and the cover part.

14. 2. An optoelectronic semiconductor component as claimed in claim 1, wherein said optoelectronic semiconductor chip is a semiconductor laser diode.

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