Contactor

Abstract

To provide a contactor and a semiconductor inspection device for improving inspection efficiency of a semiconductor device while preventing deterioration in inspection accuracy of the semiconductor device.SOLUTION: An inspection device A10 includes: a stage 21 having a mounting surface 211; a body 11 having a base surface 111 facing the mounting surface 211; and a probe 12 projecting from the base surface 111 toward the mounting surface 211. The inspection device A10 further includes a bulkhead 13 that is annular when viewed along a direction perpendicular to the base surface 111. When the stage 21 and the body 11 relatively approach to each other, an airtight space S is formed by the stage 21, the body 11 and the bulkhead 13, and the probe 12 is accommodated in the airtight space.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] The present disclosure relates to a contactor used in testing a semiconductor device. To Regarding. [Background technology]

[0002] An example of a semiconductor inspection device is disclosed in Patent Document 1. The inspection device is used to screen out non-conforming products by inspecting semiconductor chips through electrical tests.

[0003] The semiconductor chip targeted by the inspection device disclosed in Patent Document 1 is an IGBT. A relatively large voltage is applied to the IGBT when it is used. For this reason, when the inspection device is used to inspect a semiconductor chip, discharge occurs at the boundary between the top and side surfaces of the semiconductor chip. If such a discharge occurs, the inspection accuracy of the semiconductor chip may decrease, or the semiconductor chip may be destroyed. In recent years, such discharges tend to increase further due to further miniaturization of semiconductor chips. For this reason, in order to suppress such discharges, pressurized gas is filled in the inspection device, and the semiconductor chip is inspected under the atmosphere of the pressurized gas. However, if the volume of the space filled with the pressurized gas is relatively large, the time required for pressurizing the gas and the time required for discharging the gas are both long, leading to a decrease in inspection efficiency. Therefore, improvements in this regard are desired. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2019-132718 A Summary of the Invention [Problem to be solved by the invention]

[0005] In view of the above circumstances, an object of the present disclosure is to provide a contactor and a semiconductor inspection apparatus that can improve the efficiency of inspecting semiconductor elements while preventing a decrease in the inspection accuracy of the semiconductor elements. [Means for solving the problem]

[0006] A contactor provided by a first aspect of the present disclosure comprises a body having a base surface and a probe protruding from the base surface, and further comprises a partition body having an end surface facing in the same direction as the base surface and attached to the body, the partition body surrounding the probe, and in a direction perpendicular to the base surface, the probe is located between the base surface and the end surface.

[0007] A semiconductor inspection apparatus provided by a second aspect of the present disclosure comprises a stage having a mounting surface, a main body having a base surface opposite the mounting surface, and a probe protruding from the base surface toward the mounting surface, and further comprises a partition body that is annular when viewed along a direction perpendicular to the base surface, and when the stage and the main body come relatively close to each other, an airtight space is formed by the stage, the main body and the partition body, and the probe is accommodated in the airtight space. Effect of the Invention

[0008] According to the contactor and semiconductor inspection apparatus of the present disclosure, it is possible to improve the efficiency of inspecting semiconductor elements while preventing a decrease in the inspection accuracy of the semiconductor elements.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a front view of a contactor of a semiconductor inspection device according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a right side view of the contactor shown in FIG. [Diagram 3] FIG. 3 is a plan view of the contactor shown in FIG. [Figure 4] FIG. 4 is a bottom view of the contactor shown in FIG. [Diagram 5] FIG. 5 is a cross-sectional view taken along line VV in FIG. [Figure 6] FIG. 6 is a cross-sectional view of a main part of the semiconductor inspection apparatus according to the first embodiment of the present disclosure, showing a state in which the contactor is separated from the semiconductor element. [Figure 7] FIG. 7 is a cross-sectional view of a main part of the semiconductor inspection apparatus shown in FIG. 6, showing a state in which the contactor is in contact with the semiconductor element. [Figure 8] FIG. 8 is a partially enlarged view of FIG. [Figure 9] FIG. 9 is a partially enlarged cross-sectional view of the state of the semiconductor inspection device shown in FIG. [Figure 10] FIG. 10 is an enlarged cross-sectional view of a main portion of a semiconductor inspection device according to the second embodiment of the present disclosure. [Figure 11] FIG. 11 is an enlarged cross-sectional view of a main portion of a semiconductor inspection device according to the third embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] The embodiments for carrying out the present disclosure will be described with reference to the accompanying drawings. Each of the drawings is drawn in a schematic manner. Furthermore, each of the drawings may include omitted and exaggerated parts.

[0012] [First embodiment] A semiconductor inspection device (hereinafter referred to as "inspection device A10") according to a first embodiment of the present disclosure will be described with reference to Figs. 1 to 9. The inspection device A10 is used to check the operation of a semiconductor element 50 before the semiconductor element 50 is mounted on a package or the like. The semiconductor element 50 that is the subject of the inspection device A10 is a vertical structure element such as an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and an FRD (Fast Recovery Diode). The inspection device A10 includes a contactor 10, a stage 21, a support 22, a base 23, a block 31, a wiring board 32, a hanging body 33, a gate terminal 41, a first sense terminal 42, a force terminal 43, and a second sense terminal 45.

[0013] In the description of the inspection device A10, for convenience, the direction perpendicular to a base surface 111 of the main body 11 described later is called the "z direction", the direction perpendicular to the z direction is called the "x direction", and the direction perpendicular to both the z direction and the x direction is called the "y direction".

[0014] First, the semiconductor element 50 that is the target of the inspection device A10 will be described. In the description of the inspection device A10, the target semiconductor element 50 is an n-channel MOSFET with a vertical structure. As described above, the semiconductor element 50 is not limited to a MOSFET as long as it has a vertical structure. The semiconductor element 50 includes a compound semiconductor substrate. The main material of the compound semiconductor substrate is silicon carbide (SiC). Alternatively, silicon (Si) may be used as the main material of the compound semiconductor substrate.

[0015] 3, 8 and 9, the semiconductor element 50 has a plurality of electrodes 51. The plurality of electrodes 51 include a first electrode 511, a second electrode 512, a gate electrode 513 and an inspection electrode 514.

[0016] 8 and 9, when the semiconductor element 50 is placed on the inspection apparatus A10, the first electrode 511 contacts the stage 21. A current corresponding to the power before being converted by the semiconductor element 50 flows through the first electrode 511. In other words, the first electrode 511 corresponds to a drain electrode.

[0017] 8, when the semiconductor element 50 is placed in the inspection apparatus A10, the second electrode 512 faces a probe 12, which will be described later. A current corresponding to the power converted by the semiconductor element 50 flows through the second electrode 512. In other words, the second electrode 512 corresponds to a source electrode.

[0018] 8 and 9, when the semiconductor element 50 is placed in the inspection device A10, the gate electrode 513 faces the main body 11 described below. The gate electrode 513 is located away from the first electrode 511. A gate voltage for driving the semiconductor element 50 is applied to the gate electrode 513. As shown in FIG. 3, the area of ​​the gate electrode 513 is smaller than the area of ​​the second electrode 512 when viewed along the z direction.

[0019] 9, when the semiconductor element 50 is placed in the inspection device A10, the inspection electrode 514 faces the main body 11, which will be described later. In the inspection device A10, the inspection electrode 514 includes two areas spaced apart from each other. However, the configuration of the inspection electrode 514 is not limited to this. The inspection electrode 514 is electrically connected to the second electrode 512.

[0020] Next, the configuration of each part of the inspection device A10 will be described.

[0021] As shown in Fig. 6 and Fig. 7, the contactor 10 is supported by a block 31 and a wiring board 32. Furthermore, the contactor 10 is electrically connected to a power source and a control device arranged outside the inspection device A10. As shown in Figs. 1 to 5, the contactor 10 includes a main body 11, a probe 12, and a partition body 13.

[0022] As shown in Fig. 6 and Fig. 7, the main body 11 is supported by a block 31 and a wiring board 32. The main body 11 is conductive. In the inspection device A10, the main body 11 has a rectangular parallelepiped shape. However, the shape of the main body 11 is not limited to this. As shown in Figs. 1, 2 and 5, the main body 11 has a base surface 111 facing the z direction.

[0023] As shown in FIGS. 1 to 5, a gas flow passage 112 is provided in the main body 11. Both ends of the gas flow passage 112 are exposed from the main body 11. The gas flow passage 112 has an outlet 112A provided in the base surface 111. The outlet 112A corresponds to one of the two ends of the gas flow passage 112. As shown in FIG. 4, the outlet 112A is surrounded by a partition body 13. As long as both ends of the gas flow passage 112 are exposed from the main body 11 and the outlet 112A is provided in the base surface 111, the path of the gas flow passage 112 is not limited to the path indicated by the inspection device A10.

[0024] As shown in FIGS. 2 to 4, the main body 11 is provided with a plurality of support holes 113. The plurality of support holes 113 penetrate the main body 11 in the z direction. In the inspection device A10, any of the plurality of support holes 113 is connected to the gas flow passage 112. Alternatively, in the inspection device A10, all of the plurality of support holes 113 may be located away from the gas flow passage 112. As shown in FIG. 3, when the probe 12 contacts the second electrode 512, two support holes 113 overlap two regions of the inspection electrode 514 of the semiconductor element 50, respectively, as viewed along the z direction, and the remaining support hole 113 overlaps the gate electrode 513 of the semiconductor element 50.

[0025] As shown in Figs. 6 and 7, the probe 12 protrudes from the base surface 111 toward a mounting surface 211 of the stage 21, which will be described later. The probe 12 is electrically connected to the main body 11. The probe 12 is configured to be able to contact a first electrode 511 of the semiconductor element 50. The probe 12 includes a plurality of pins. As shown in Figs. 3 and 4, the plurality of pins constituting the probe 12 are arranged in a lattice pattern along each of the x direction and the y direction. As shown in Fig. 3, when the probe 12 contacts the second electrode 512, the outlet 112A of the gas flow passage 112 overlaps with the gate electrode 513 when viewed along the z direction.

[0026] The partition 13 is attached to the main body 11 as shown in Figs. 1 to 5. In the inspection device A10, the partition 13 is attached to a base surface 111 of the main body 11. The partition 13 protrudes from the base surface 111. As shown in Fig. 4, the partition 13 is annular when viewed along the z direction, and surrounds the probe 12. The partition 13 is an elastic body having electrical insulation properties. Furthermore, the partition 13 preferably has excellent heat resistance. An example of a material for the partition 13 having such properties is a fluororesin.

[0027] As shown in FIGS. 1 to 5, the partition 13 has an outer peripheral surface 131, an inner peripheral surface 132, and an end surface 133. The outer peripheral surface 131 faces outward from the contactor 10 in a direction perpendicular to the z direction. When viewed along the z direction, the outer peripheral surface 131 is located inward from the periphery of the base surface 111. The inner peripheral surface 132 faces the opposite side to the outer peripheral surface 131 in a direction perpendicular to the z direction. The inner peripheral surface 132 faces the probe 12. The end surface 133 faces the same direction as the base surface 111 in the z direction. The end surface 133 is connected to the outer peripheral surface 131 and the inner peripheral surface 132. As shown in FIGS. 1, 2, and 5, the probe 12 is located between the base surface 111 and the end surface 133 in the z direction.

[0028] As shown in FIG. 6 and FIG. 7, the semiconductor element 50 is placed on the stage 21. The stage 21 is conductive. The material of the stage 21 preferably has a relatively high thermal conductivity. The stage 21 has a mounting surface 211 and an opening 212. The mounting surface 211 faces the base surface 111 of the main body 11. The semiconductor element 50 is placed on the mounting surface 211. The opening 212 is provided on the mounting surface 211. The opening 212 penetrates the stage 21 in the z direction. When viewed along the z direction, the size of the opening 212 is smaller than the size of the semiconductor element 50. As shown in FIG. 8, when the semiconductor element 50 is placed on the mounting surface 211, the first electrode 511 of the semiconductor element 50 contacts the mounting surface 211, and the opening 212 is blocked by the first electrode 511.

[0029] 6 and 7, the support 22 supports the stage 21. The support 22 may or may not be conductive. The material of the support 22 preferably has a relatively high thermal conductivity.

[0030] 6 and 7, the base 23 is located on the opposite side of the support 22 from the stage 21 in the z direction. The base 23 supports the support 22. The base 23 has electrical insulation properties.

[0031] 6 and 7, a passage 24 is provided in the support 22 and the base 23. The passage 24 is connected to an opening 212 in the stage 21. The passage 24 is exposed from the base 23. The path of the passage 24 is not limited to the path indicated by the inspection device A10.

[0032] As shown in FIGS. 6 and 7, the block 31 is located on the opposite side of the stage 21 with respect to the probe 12 in the z direction. The block 31 supports the main body 11. The block 31 has electrical insulation. In the inspection device A10, the block 31 is a laminated body of multiple blocks stacked in the z direction. The block 31 is provided with a gas flow passage 311. One end of the gas flow passage 311 is an inlet 311A ​​through which the pressurized gas flows in. The other end of the gas flow passage 311 is connected to the gas flow passage 112 of the main body 11. As long as the inlet 311A ​​is provided and the gas flow passage 311 is connected to the gas flow passage 112, the path of the gas flow passage 311 is not limited to the path shown in the inspection device A10.

[0033] 6 and 7, the wiring board 32 is located on the opposite side of the block 31 from the probe 12 in the z direction. The wiring board 32 is attached to the block 31. The wiring board 32, together with the contactor 10, is electrically connected to a power supply and a control device that are arranged outside the inspection apparatus A10.

[0034] 6 and 7, the hanging body 33 is located on the opposite side of the wiring board 32 from the block 31 in the z direction. The wiring board 32 is supported by the hanging body 33. As a result, the contactor 10 and the block 31 are suspended and supported by the hanging body 33 via the wiring board 32.

[0035] As shown in Figs. 6, 7 and 9, the gate terminal 41 is supported in one of a plurality of support holes 113 in the main body 11. In this case, an insulating layer (not shown) is interposed between the gate terminal 41 and the support hole 113. This allows the gate terminal 41 to be electrically insulated from the main body 11. Alternatively, the gate terminal 41 may be supported by the block 31. In this case, the gate terminal 41 is located away from the main body 11. The gate terminal 41 is electrically connected to the wiring board 32. When the probe 12 contacts the first electrode 511 of the semiconductor element 50, the gate terminal 41 contacts the gate electrode 513 of the semiconductor element 50. The gate terminal 41 applies a gate voltage to the gate electrode 513 for driving the semiconductor element 50.

[0036] 8, the gate terminal 41 is surrounded by the outlet 112A of the gas flow passage 112 of the main body 11. Therefore, in the inspection device A10, at least a part of the gate terminal 41 is housed in the gas flow passage 112 of the main body 11.

[0037] 6 and 7, the first sense terminal 42 is housed in the opening 212 and the passage 24 of the stage 21. The first sense terminal 42 is surrounded by the opening 212. When the semiconductor element 50 is placed on the mounting surface 211 of the stage 21, the first sense terminal 42 comes into contact with the first electrode 511 of the semiconductor element 50. The first sense terminal 42 is electrically connected to the wiring board 32 via a first wiring 441 and a second wiring 442. The first sense terminal 42 is housed in the passage 24.

[0038] 6 and 7, the force terminal 43 is in contact with the stage 21. The force terminal 43 is electrically connected to the first electrode 511 of the semiconductor element 50 via the stage 21. The force terminal 43 is further electrically connected to a power source and a control device arranged outside the inspection apparatus A10.

[0039] As shown in FIG. 9, the second sense terminal 45 is supported in one of the support holes 113 of the main body 11. In this case, an insulating layer (not shown) is interposed between the second sense terminal 45 and the support hole 113. As a result, the second sense terminal 45 is electrically insulated from the main body 11. Alternatively, the second sense terminal 45 may be supported by the block 31. In this case, the second sense terminal 45 is located away from the main body 11. In the inspection device A10, the second sense terminal 45 includes two parts located away from each other. However, the configuration of the second sense terminal 45 is not limited to this. The second sense terminal 45 is electrically connected to the wiring board 32. When the probe 12 contacts the second electrode 512 of the semiconductor element 50, the second sense terminal 45 contacts the inspection electrode 514 of the semiconductor element 50.

[0040] Next, the operation of the inspection device A10 will be described.

[0041] First, as shown in FIG. 6, the semiconductor element 50 is placed on the mounting surface 211 of the stage 21. At this time, although the first sense terminal 42 contacts the first electrode 511 (see FIG. 8) of the semiconductor element 50, the probe 12, the gate terminal 41, and the second sense terminal 45 are located away from the semiconductor element 50. Furthermore, the first wiring 441 is not connected to the second wiring 442, and the third wiring 443 is not connected to the fourth wiring 444. Therefore, the first sense terminal 42 is not electrically connected to the wiring board 32. In addition, the force terminal 43 is not electrically connected to the power supply and the control device arranged outside the inspection device A10. The semiconductor element 50 is sucked through the passage 24 and the opening 212 of the stage 21 so as to be in close contact with the mounting surface 211.

[0042] Next, as shown in FIG. 7, at least one of the stage 21 and the suspending body 33 is moved in the z direction to bring the stage 21 and the main body 11 relatively close to each other. At this time, as shown in FIG. 8, the probe 12 contacts the second electrode 512 of the semiconductor element 50. At the same time, as shown in FIG. 9, the gate terminal 41 contacts the gate electrode 513 of the semiconductor element 50, and the second sense terminal 45 contacts the inspection electrode 514 of the semiconductor element 50. Furthermore, the first wiring 441 is connected to the second wiring 442, and the third wiring 443 is connected to the fourth wiring 444. As a result, the first sense terminal 42 is conducted to the wiring board 32, and the force terminal 43 is conducted to the power supply and the control device arranged outside the inspection device A10. The connection means of the first wiring 441 and the second wiring 442 and the connection means of the third wiring 443 and the fourth wiring 444 can be freely set.

[0043] As shown in FIG. 8, when the probe 12 contacts the first electrode 511 of the semiconductor element 50, an airtight space S is formed by the stage 21, the main body 11, and the partition 13. The semiconductor element 50 and the probe 12 are stored in the airtight space S. In the inspection device A10, the end face 133 of the partition 13 contacts the mounting surface 211 of the stage 21. In this state, gas is pumped from the inlet 311A ​​of the gas flow passage 311 of the block 31. An example of the gas is dry air or sulfur hexafluoride. The gas is filled into the airtight space S from the outlet 112A of the gas flow passage 112 of the main body 11. The gas is gradually pressurized in the airtight space S. After the airtight space S is filled with gas, a voltage is applied to the first electrode 511 of the semiconductor element 50 via the stage 21 by supplying power to the force terminal 43. At the same time, a gate voltage is applied to the gate electrode 513 of the semiconductor element 50 from the gate terminal 41. As a result, when the switching operation of the semiconductor element 50 is turned on, a current flows from the first electrode 511 through the second electrode 512 of the semiconductor element 50 to the probe 12. Under this condition, an inspection of the semiconductor element 50 is performed, such as measuring the voltage between the first electrode 511 and the second electrode 512 using the first sense terminal 42 and the second sense terminal 45.

[0044] Next, the function and effect of the inspection device A10 will be described.

[0045] The inspection device A10 includes a stage 21 having a mounting surface 211 on which a semiconductor element 50 is mounted, a main body 11 having a base surface 111, and a probe 12 protruding from the base surface 111 toward the mounting surface 211. The inspection device A10 further includes a partition 13 that is annular when viewed along the z direction. As shown in FIG. 8, when the stage 21 and the main body 11 are brought relatively close to each other so that the probe 12 comes into contact with the second electrode 512 of the semiconductor element 50, an airtight space S is formed by the stage 21, the main body 11, and the partition 13, and the semiconductor element 50 and the probe 12 are accommodated in the airtight space S. This configuration can reduce the volume of the airtight space S filled with gas. Therefore, the volume of the pressurized gas required to suppress the discharge of the semiconductor element 50 can be reduced, while the time required to pressurize the gas can be shortened. Therefore, according to the inspection device A10, it is possible to improve the inspection efficiency of the semiconductor element 50 while preventing a decrease in the inspection accuracy of the semiconductor element 50.

[0046] The effects of such an inspection device A10 can also be obtained by a contactor 10 including a main body 11, a probe 12, and a partition 13. The contactor 10 is configured such that, in the z direction, the probe 12 is located between a base surface 111 of the main body 11 and an end surface 133 of the partition 13. As a result, a space for accommodating the semiconductor element 50 is secured between the tip of the probe 12 and the end surface 133 in the z direction, so that when the airtight space S is formed, the semiconductor element 50 is accommodated in the airtight space S together with the probe 12.

[0047] The main body 11 is provided with a gas flow passage 112. The gas flow passage 112 has an outlet 112A provided in the base surface 111 of the main body 11. The outlet 112A is surrounded by the partition body 13. This results in a configuration in which the gas flow passage 112 is connected to the airtight space S. Furthermore, when the probe 12 contacts the second electrode 512 of the semiconductor element 50, the outlet 112A overlaps with the gate electrode 513 of the semiconductor element 50 when viewed along the z direction. This brings the position of the outlet 112A closer to the semiconductor element 50, thereby making it possible to further reduce the volume of the airtight space S.

[0048] The inspection device A10 further includes a gate terminal 41 that comes into contact with a gate electrode 513 of the semiconductor element 50 when the probe 12 comes into contact with a second electrode 512 of the semiconductor element 50. The gate terminal 41 is surrounded by an outlet 112A of the gas flow passage 112. This allows at least a portion of the gate terminal 41 to be stored in the gas flow passage 112, thereby making it possible to reduce the size of the inspection device A10.

[0049] The stage 21 has an opening 212 provided in the mounting surface 211. The inspection device A10 further includes a first sense terminal 42 surrounded by the opening 212. The first sense terminal 42 comes into contact with a first electrode 511 of the semiconductor element 50. This allows the semiconductor element 50 to be sucked through the opening 212 while the first sense terminal 42 is stored in the passage 24 connected to the opening 212. Therefore, the semiconductor element 50 is in close contact with the mounting surface 211, and thus it is possible to prevent the semiconductor element 50 from being misaligned with the probe 12.

[0050] Furthermore, the stage 21 is conductive, which allows a voltage to be applied to the first electrode 511 of the semiconductor element 50 through the stage 21 as a conductive path.

[0051] The partition body 13 protrudes from the base surface 111 of the main body 11. As a result, when the probe 12 is brought into contact with the first electrode 511 of the semiconductor element 50, the partition body 13 is compressed in the z direction by the stage 21 and the main body 11. This makes it possible to improve the airtightness of the airtight space S. In this case, if the partition body 13 is an elastic body, the partition body 13 is compressed and deformed in the z direction. This increases the density of the partition body 13, making it possible to further improve the airtightness of the airtight space S.

[0052] The partition 13 is preferably an electrical insulator, which can prevent a decrease in the accuracy of inspection of the semiconductor element 50 caused by leakage current from the main body 11 and the stage 21, etc.

[0053] Second Embodiment A semiconductor inspection device according to a second embodiment of the present disclosure (hereinafter referred to as "inspection device A20") will be described with reference to Fig. 10. In this figure, elements that are the same as or similar to those of the inspection device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. Fig. 10 shows a state in which the probe 12 contacts the second electrode 512 of the semiconductor element 50 and an airtight space S is formed.

[0054] In the inspection apparatus A20, the configuration of the contactor 10 is different from that of the inspection apparatus A10 described above.

[0055] 10, the main body 11 is provided with a recess 114 recessed in the z direction from a base surface 111. The recess 114 is annular and surrounds the probe 12 when viewed along the z direction. The partition 13 is fitted into the recess 114. In the inspection device A20 as well, the partition 13 is configured to protrude from the base surface 111.

[0056] Next, the function and effect of the inspection device A20 will be described.

[0057] The inspection device A20 includes a stage 21 having a mounting surface 211 on which a semiconductor element 50 is mounted, a main body 11 having a base surface 111, and a probe 12 protruding from the base surface 111 toward the mounting surface 211. The inspection device A20 further includes a partition 13 having an annular shape when viewed along the z direction. As shown in FIG. 10, when the stage 21 and the main body 11 are brought relatively close to each other so that the probe 12 comes into contact with the second electrode 512 of the semiconductor element 50, an airtight space S is formed by the stage 21, the main body 11, and the partition 13, and the semiconductor element 50 and the probe 12 are accommodated in the airtight space S. Therefore, the inspection device A20 can also improve the inspection efficiency of the semiconductor element 50 while preventing a decrease in the inspection accuracy of the semiconductor element 50. Furthermore, the inspection device A20 has a configuration similar to that of the inspection device A10, and thus the inspection device A20 also achieves the effects of the configuration.

[0058] In the inspection device A20, the partition 13 is fitted into a recess 114 provided in the main body 11. This increases the contact area of ​​the partition 13 with the main body 11, so that the partition 13 can be attached to the main body 11 more firmly. This increases the degree of sealing in the airtight space S shown in FIG. 10.

[0059] Third Embodiment A semiconductor inspection device according to a third embodiment of the present disclosure (hereinafter referred to as "inspection device A30") will be described with reference to Fig. 11. In this figure, elements that are the same as or similar to those of the inspection device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. Fig. 11 shows a state in which the probe 12 contacts the second electrode 512 of the semiconductor element 50 and an airtight space S is formed.

[0060] In the inspection apparatus A30, the configuration of the stage 21 is different from that of the inspection apparatus A10 described above.

[0061] 11, the stage 21 has a main surface 213. The main surface 213 faces the same direction as the mounting surface 211 in the z direction and is located farther away from the main body 11 than the mounting surface 211. Furthermore, the stage 21 is provided with a convex portion 214. The convex portion 214 protrudes from the main surface 213 toward the main body 11. The mounting surface 211 is included in the convex portion 214. Therefore, in the inspection device A30, the semiconductor element 50 is configured to be disposed on the convex portion 214. Furthermore, in the inspection device A30, when the airtight space S is formed, the end surface 133 of the partition body 13 comes into contact with the main surface 213.

[0062] Next, the function and effect of the inspection device A30 will be described.

[0063] The inspection device A30 includes a stage 21 having a mounting surface 211 on which a semiconductor element 50 is mounted, a main body 11 having a base surface 111, and a probe 12 protruding from the base surface 111 toward the mounting surface 211. The inspection device A30 further includes a partition 13 having an annular shape when viewed along the z direction. As shown in FIG. 11, when the stage 21 and the main body 11 are brought relatively close to each other so that the probe 12 comes into contact with the second electrode 512 of the semiconductor element 50, an airtight space S is formed by the stage 21, the main body 11, and the partition 13, and the semiconductor element 50 and the probe 12 are accommodated in the airtight space S. Therefore, the inspection device A30 can also improve the inspection efficiency of the semiconductor element 50 while preventing a decrease in the inspection accuracy of the semiconductor element 50. Furthermore, the inspection device A30 has a configuration similar to that of the inspection device A10, and thus the inspection device A30 also achieves the effects of the configuration.

[0064] In the inspection device A30, the stage 21 is provided with a convex portion 214 that protrudes from the main surface 213 and includes the mounting surface 211. This shortens the distance from the base surface 111 of the main body 11 to the mounting surface 211, and therefore the length of the probe 12 protruding from the base surface 111 in the z direction can be made shorter. This reduces the electrical resistance value of the probe 12, and therefore the inspection accuracy of the semiconductor element 50 can be improved.

[0065] The present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the present disclosure can be freely designed in various ways.

[0066] The technical configurations of the contactor and semiconductor inspection device provided by the present disclosure are described below.

[0067] [Appendix 1] a body having a base surface; a probe protruding from the base surface; a partition body having an end surface facing the same direction as the base surface and attached to the main body; The partition surrounds the probe, A contactor, wherein the probe is located between the base surface and the end surface in a direction perpendicular to the base surface. [Appendix 2] 2. The contactor of claim 1, wherein the partition body protrudes from the base surface. [Appendix 3] 3. The contactor according to claim 2, wherein the partition body is an elastic body. [Appendix 4] The body is provided with a gas flow passage, the gas flow passage has an outlet provided in the base surface, 4. The contactor according to claim 1, wherein the outlet is surrounded by the partition body. [Appendix 5] 5. The contactor according to claim 1, wherein the partition has electrical insulation properties. [Appendix 6] 6. The contactor of claim 1, wherein the probe includes a plurality of pins. [Appendix 7] a stage having a mounting surface; a main body having a base surface facing the mounting surface; a probe protruding from the base surface toward the mounting surface, A partition body having an annular shape when viewed in a direction perpendicular to the base surface, When the stage and the main body approach each other relatively, an airtight space is formed by the stage, the main body and the partition body, and the probe is accommodated in the airtight space. [Appendix 8] the bulkhead is attached to the body and surrounds the probe; The partition body has an end surface facing in the same direction as the base surface, 8. The semiconductor inspection apparatus of claim 7, wherein when the stage and the probe approach each other, the end face comes into contact with the mounting surface. [Appendix 9] 9. The semiconductor inspection device according to claim 8, wherein the partition body protrudes from the base surface. [Appendix 10] 10. The semiconductor inspection device according to claim 9, wherein the partition is an elastic body. [Appendix 11] Further comprising an electrically insulating block; 11. The semiconductor inspection device according to claim 7, wherein the main body is supported by the block. [Appendix 12] The body and the block are provided with a gas flow passage, the gas flow passage has an outlet provided in the base surface, 12. The semiconductor inspection device according to claim 11, wherein the outlet is surrounded by the partition body. [Appendix 13] 13. The semiconductor inspection apparatus of claim 12, further comprising a gate terminal surrounded by the outlet. [Appendix 14] 14. The semiconductor inspection device according to claim 7, wherein the partition has electrical insulation properties. [Appendix 15] 15. The semiconductor inspection apparatus of claim 14, wherein the probe includes a plurality of pins. [Appendix 16] 16. The semiconductor inspection apparatus according to claim 14, wherein the stage is conductive. [Appendix 17] the stage has an opening provided in the mounting surface, 17. The semiconductor inspection device according to claim 16, further comprising a first sense terminal surrounded by the opening. [Explanation of symbols]

[0068] A10, A20, A30: Inspection equipment 10: Contactor 11: Main body 111: Base 112: Gas flow passage 112A: Outlet 113: Support hole 114: Recess 12: Probe 13: Partition body 131: Outer surface 132: Inner surface 133: End face 21: Stage 211: Mounting surface 212:Aperture 213: Main surface 214: Convex 22:Support 23: Pedestal 24: Passage 31: Block 311: Gas flow passage 311A: Inlet 32: Wiring board 33: Hanging body 41: Gate terminal 42: First sense terminal 43: Force terminal 441: 1st wiring 442:Second wiring 443: 3rd wiring 444: 4th wiring 45: Second sense terminal 50: Semiconductor elements 51: Electrode 511: 1st electrode 512:Second electrode 513: Gate electrode 514: Test electrode z,x,y: direction

Claims

1. A body having a base surface facing a first direction; a probe protruding from the base surface; a partition body having an end surface facing the same side as the base surface in the first direction and attached to the main body, The partition surrounds the probe, the probe includes a plurality of pins and is located between the base surface and the end surface in the first direction; The body is provided with a gas flow passage, the gas flow passage has an outlet provided in the base surface, The outlet is surrounded by the partition body, When a semiconductor element having a second electrode and a gate electrode located on the same side in the first direction is disposed facing the base surface, the semiconductor element is located between the probe and the end surface in the first direction with the second electrode in contact with the probe, When viewed in the first direction, the outlet overlaps with the gate electrode.

2. The contactor according to claim 1 , wherein the partition body protrudes from the base surface.

3. The contactor according to claim 2 , wherein the partition body is an elastic body.

4. A contactor as described in any one of claims 1 to 3, wherein the partition body has electrical insulation properties.

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