Gallium nitride layer manufacturing apparatus and method for manufacturing gallium nitride layer

Abstract

To restrain deterioration of a quality of a GaN layer.SOLUTION: A changeover part 400 can make a change between a communication state between a generation device 20 and a growth device 10 and a communication state between the generation device 20 and an exhaust piping 410. The generation device 20 comprises: a first space 211, on which metal gallium 200 is arranged, and a second space 212 positioned between the first space 211 and a supply piping 310; a first induction piping 231 for inducing chlorine gas to the first space 211; and a second induction piping 232 for inducing the chlorine gas to the second space 212. After the chlorine gas is induced from the second induction piping 232, the chlorine gas is induced from the first induction piping 231. The changeover part 400 is configured so that the generation device 20 and the exhaust piping 410 communicate with each other before the chlorine gas is induced from the first induction piping 231 and the generation device 29 and the growth device 120 communicate with each other after the chlorine gas is inducted from the first induction piping 231.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a GaN layer manufacturing apparatus and a GaN layer manufacturing method for growing a GaN layer on a seed substrate made of gallium nitride (hereinafter, also simply referred to as GaN). [Background technology]

[0002] Conventionally, a GaN layer manufacturing apparatus and a manufacturing method thereof have been proposed, which use a hydride vapor phase epitaxy to grow a GaN layer on a seed substrate made of GaN (see, for example, Patent Document 1). Specifically, the manufacturing apparatus includes a growth apparatus on which a seed substrate is placed and on which a GaN layer is grown, and a generation apparatus that generates gallium trichloride gas as a raw material gas for growing the GaN layer. The manufacturing apparatus also includes a first supply pipe that connects the growth apparatus and the generation apparatus and supplies the gas generated by the generation apparatus to the growth apparatus, and a second supply pipe that supplies ammonia gas as a raw material gas for growing the GaN layer to the growth apparatus.

[0003] The growth apparatus has a growth vessel in which a seed substrate is placed, and is configured so that gallium trichloride gas generated in the generation device is supplied into the growth vessel through a first supply pipe, and ammonia gas is supplied into the growth vessel through a second supply pipe.

[0004] The generating device includes a generating vessel in which metallic gallium is disposed. The generating vessel includes a first space in which metallic gallium is disposed, and a second space communicating with the first space. The generating vessel also includes a first induction pipe for guiding chlorine gas to the first space, and a second induction pipe for guiding chlorine gas to the second space.

[0005] In the generator, when chlorine gas is introduced from the first induction pipe, the metallic gallium reacts with the chlorine gas to generate gallium monochloride gas, as shown in the reaction of Chemical Formula 1 below.

[0006] (Chemical formula 1) Ga+1 / 2Cl2 → GaCl In addition, in the generation device, when chlorine gas is introduced into the generation vessel from the second induction pipe, the gallium monochloride gas and the chlorine gas react with each other to generate gallium trichloride gas, as shown in the following chemical formula 2.

[0007] (Chemical formula 2)GaCl+Cl2→GaCl3 In such a GaN layer manufacturing apparatus, gallium trichloride gas and ammonia gas are supplied onto the seed substrate, and a GaN layer is grown by the reaction of Chemical Formula 3 below.

[0008] (Chemical formula 3)GaCl3+NH3→GaN+3HCl In this GaN layer manufacturing apparatus, chlorine gas is simultaneously introduced into the generation vessel from the first induction pipe and the second induction pipe. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] Patent No. 5787324 Summary of the Invention [Problem to be solved by the invention]

[0010] However, in the above-mentioned GaN layer manufacturing apparatus, chlorine gas is simultaneously introduced from the first induction pipe and the second induction pipe into the growth vessel. Therefore, in the above-mentioned GaN layer manufacturing apparatus, there is a possibility that unreacted chlorine gas is directly supplied into the growth vessel. In this case, the seed substrate placed in the growth vessel may be scraped by the chlorine gas, and the quality of the GaN layer may be deteriorated.

[0011] In view of the above, an object of the present invention is to provide a GaN layer manufacturing apparatus and a GaN layer manufacturing method that can suppress deterioration in the quality of the GaN layer. [Means for solving the problem]

[0012] In claim 1 for achieving the above object, a GaN layer manufacturing apparatus for growing a GaN layer (122) by supplying a gallium-based gas and an ammonia-based gas onto a seed substrate (121) includes a growth apparatus (10) having a cylindrical growth vessel (100) in which a GaN layer is grown in a hollow portion (101a) constituting a reaction chamber, a base (120) that is disposed in the hollow portion of the growth vessel and on which a seed substrate on which a GaN layer is grown is disposed, a generation apparatus (20) that generates gallium trichloride gas as a gallium-based gas, and a supply pipe (310) that connects the generation apparatus and the growth apparatus and supplies the gallium trichloride gas generated by the generation apparatus to the growth apparatus, the supply pipe being provided with an exhaust pipe (410) via a switching unit (400), and the switching unit switches the generation and the supply and exhaust pipes (410) between the generation and the growth apparatus. The generator includes a first space (211) in which metallic gallium (200) is placed, a second space (212) located between the first space and a supply pipe, a first induction pipe (231) for guiding chlorine gas to the first space, and a second induction pipe (232) for guiding chlorine gas to the second space. After chlorine gas is guided from the second induction pipe, chlorine gas is guided from the first induction pipe. The switching unit is adjusted so that the generator and the exhaust pipe are in communication before chlorine gas is guided from the first induction pipe, and is switched so that the generator and the growth apparatus are in communication after chlorine gas is guided from the first induction pipe.

[0014] this According to the GaN layer manufacturing apparatus, it is possible to prevent chlorine gas from being directly supplied from the generation apparatus to the growth apparatus, and to prevent the seed substrate from being eroded by chlorine gas, etc. Therefore, it is possible to prevent the quality of the GaN layer from being deteriorated.

[0015] In addition, claims 2is a GaN layer manufacturing method using the GaN layer manufacturing apparatus of claim 1, which includes the steps of: placing a seed substrate in a growth vessel; and growing a GaN layer on the seed substrate by supplying gallium trichloride gas generated in a generator to the seed substrate, and the step of supplying gallium trichloride gas includes the steps of: inducing chlorine gas from a second induction pipe while the exhaust pipe is in communication with the generator; inducing chlorine gas from the first induction pipe after inducing chlorine gas from the second induction pipe; and communicating the growth apparatus with the generator after inducing chlorine gas from the first induction pipe.

[0017] this According to the method for producing a GaN layer, it is possible to prevent chlorine gas from being directly supplied from the generation apparatus to the growth apparatus, and to prevent the seed substrate from being eroded by chlorine gas, etc. Therefore, it is possible to prevent the quality of the GaN layer from being deteriorated.

[0018] The reference symbols in parentheses attached to each component indicate an example of the correspondence between the component and specific components described in the embodiments described below. [Brief description of the drawings]

[0019] [Figure 1] 1 is a schematic cross-sectional view of a GaN layer manufacturing apparatus according to a first embodiment. [Diagram 2] 4 is a flowchart showing a manufacturing process of the GaN layer in the first embodiment. [Diagram 3] FIG. 11 is a schematic cross-sectional view of a GaN layer manufacturing apparatus according to a second embodiment. [Figure 4] 10 is a flowchart showing a manufacturing process of a GaN layer in the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be denoted by the same reference numerals.

[0021] (First embodiment) The first embodiment will be described with reference to the drawings. First, the configuration of a GaN layer manufacturing apparatus will be described with reference to Fig. 1. The GaN layer manufacturing apparatus shown in Fig. 1 is installed with the up-down direction of the paper surface of Fig. 1 as the top-to-bottom direction, and grows a GaN layer 122 on a seed substrate 121.

[0022] 1, the GaN layer manufacturing apparatus includes a growth apparatus 10 for growing a GaN layer 122, and a generation apparatus 20 for generating gallium trichloride gas as a source gas for growing the GaN layer 122. The GaN layer manufacturing apparatus also includes first to third supply pipes 310 to 330 for supplying various gases for growing the GaN layer 122 to the growth apparatus 10, and the like.

[0023] The growth apparatus 10 includes a growth vessel 100, a heating vessel 110, a base 120, a shaft 131, a rotation displacement mechanism 132, a heating device 140, and the like.

[0024] The growth vessel 100 has a cylindrical tube portion 101 having a hollow portion 101a that constitutes a reaction chamber, and a first lid portion 102 and a second lid portion 103 that are provided in the tube portion 101 and close the hollow portion 101a. The tube portion 101 is made of quartz glass or the like, and is cylindrical in this embodiment. The first lid portion 102 and the second lid portion 103 are made of SUS or the like, and the first lid portion 102 is provided at an end portion of the tube portion 101 that is the top side, and the second lid portion 103 is provided at an end portion of the tube portion 101 that is the bottom side. The growth vessel 100 has a structure in which other components for growing the GaN layer 122 are arranged in the hollow portion 101a, and the pressure in the hollow portion 101a can be reduced by vacuuming.

[0025] The growth vessel 100 is also provided with first to third supply pipes 310 to 330 for supplying various gases for growing the GaN layer 122. In this embodiment, the first lid 102 is provided with the first to third supply pipes 310 to 330. Specifically, the first lid 102 is provided with a first supply pipe 310 for supplying gallium trichloride gas into the growth vessel 100 as a gallium-based gas for growing the GaN layer 122 generated by the generation device 20. The first lid 102 is provided with a second supply pipe 320 for supplying ammonia gas into the growth vessel 100 as an ammonia-based gas for growing the GaN layer 122 together with the gallium trichloride gas. The first lid 102 is provided with a third supply pipe 330 for supplying nitrogen gas into the growth vessel 100 as a carrier gas.

[0026] In this embodiment, the first supply pipe 310 and the second supply pipe 320 are arranged such that one end is located inside the heating container 110 described below. On the other hand, the third supply pipe 330 is arranged such that one end is located closer to the first lid 102 than one ends of the first supply pipe 310 and the second supply pipe 320. In other words, the first to third supply pipes 310 to 330 are arranged such that the gas supplied from the first and second supply pipes 310 and 320 is easily caused to flow downward (i.e., toward the seed substrate 121 described below) by the gas supplied from the third supply pipe 330.

[0027] The first supply pipe 310 is provided with one end on the growth apparatus 10 side and the other end on the opposite side to the generation apparatus 20. In other words, the first supply pipe 310 is arranged to connect the growth apparatus 10 and the generation apparatus 20. The first supply pipe 310 has a smaller cross-sectional area normal to the gas flow direction than the generation vessel 200 described later. Although not shown, the second supply pipe 320 and the third supply pipe 330 have one end on the growth apparatus 10 and the other end on the opposite side to the respective gas supply sources.

[0028] Furthermore, the growth vessel 100 is provided with an exhaust port 104 for exhausting unreacted gases and the like that have not contributed to the growth of the GaN layer 122. In this embodiment, the exhaust port 104 is provided in the portion of the growth vessel 100 on the second lid 103 side.

[0029] The heating container 110 is made of, for example, alumina, zirconia, pyrolytic carbon, graphite, or the like, and is formed in a cylindrical shape having a hollow portion 110a. The heating container 110 is provided on the first lid portion 102 so that various gases from the first to third supply pipes 310 to 330 are supplied into the hollow portion 110a.

[0030] Pedestal 120 is a member on which seed substrate 121 made of GaN for growing GaN layer 122 is placed, and is placed below heating vessel 110. Pedestal 120 is made of a material that is difficult to thermally etch, such as graphite whose surface is coated with a high-melting point metal carbide such as PbN, SiC, TaC, or NbC. Seed substrate 121 is attached to one surface 120a of pedestal 120 located on the first to third supply pipes 310 to 330 side, and GaN layer 122 is grown on the surface of seed substrate 121.

[0031] In this embodiment, as described later, GaN layer 122 is grown by supplying gallium trichloride gas and ammonia gas onto seed substrate 121. It has been reported that when gallium trichloride gas is used to grow GaN layer 122, GaN layer 122 grows easily when the growth surface of seed substrate 121 is a nitrogen surface, and does not grow easily when the growth surface of seed substrate 121 is a gallium surface. Therefore, in this embodiment, seed substrate 121 is arranged so that the growth surface of GaN layer 122 is a nitrogen surface. In other words, seed substrate 121 is arranged so that the surface opposite to pedestal 120 is a nitrogen surface.

[0032] In addition, the pedestal 120 has a shaft 131 connected to a surface opposite to the surface on which the seed substrate 121 is disposed. The pedestal 120 is rotated with the rotation of the shaft 131, and is displaced together with the shaft 131 as the shaft 131 is displaced along the axial direction of the growth vessel 100 (i.e., the vertical direction in the plane of the paper in FIG. 1). The shaft 131, like the pedestal 120, is made of a material that is difficult to be thermally etched, and is made of, for example, graphite or the like having a surface coated with a high-melting point metal carbide such as PbN, SiC, TaC, or NbC.

[0033] Rotational displacement mechanism 132 is connected to shaft 131, and is a member that rotates and displaces shaft 131. Rotational displacement mechanism 132 adjusts the position of shaft 131 (i.e., seed substrate 121) so that the temperature of the growth surface of GaN layer 122 can be adjusted to a temperature suitable for growth as GaN layer 122 grows. Although not particularly limited, rotational displacement mechanism 132 in this embodiment rotates shaft 131 so that pedestal 120 rotates at least 200 times per minute.

[0034] Heating device 140 heats the inside of heating vessel 110 and growth vessel 100, and is configured with a heating coil such as an induction heating coil or a direct heating coil, and is disposed so as to surround the periphery of growth vessel 100. Heating device 140 of the present embodiment is driven so that the periphery of seed substrate 121 becomes about 1000 to 1300° C. when growing GaN layer 122.

[0035] The generating device 20 includes a generating vessel 200 and a heating device 240. The generating vessel 200 includes a cylindrical tube portion 201 having a hollow portion 201a, and a first lid portion 202 and a second lid portion 203 provided in the tube portion 201 to close the hollow portion 201a. The tube portion 201 is made of quartz glass or the like, and is cylindrical in this embodiment. The first lid portion 202 and the second lid portion 203 are made of SUS or the like. The first lid portion 202 is provided at an end of the tube portion 201 opposite to the side to which the first supply pipe 310 is connected, and the second lid portion 203 is provided at an end of the tube portion 201 to which the first supply pipe 310 is connected. The generating vessel 200 is structured such that the pressure in the hollow portion 201a can be reduced by vacuuming, similar to the growth vessel 100.

[0036] The generating vessel 200 is provided with a partition wall 213 that partitions the hollow portion 201a into a first space 211 on the first lid portion 202 side and a second space 212 on the second lid portion 203 side. However, this partition wall 213 is formed so as to maintain communication between the first space 211 and the second space 212. In other words, the partition wall 213 is provided so as not to completely partition the first space 211 and the second space 212.

[0037] Metallic gallium 220 is disposed in the first space 211. In this embodiment, the second space 212 is provided with a partition wall 214 for increasing the wall surface that comes into contact with the gallium monochloride gas and chlorine gas generated in the first space 211 as described later.

[0038] The generation vessel 200 is also provided with a first induction pipe 231 and a second induction pipe 232 for inducing chlorine gas into the generation vessel 200. In this embodiment, the first induction pipe 231 is provided in the first cover portion 202 so as to be able to induce chlorine gas into the first space 211. The second induction pipe 232 is provided in the tube portion 201 so as to be able to induce chlorine gas into the second space 212.

[0039] The heating device 240 heats the inside of the generating vessel 200, and is, for example, a resistance heater or the like, and is arranged around the generating vessel 200. The heating device 240 of this embodiment is driven by appropriately adjusting the location and density so that the first space 211 is hotter than the second space 212. For example, the heating device 240 of this embodiment is arranged and driven so that the first space 211 is about 800 to 900°C and the temperature of the second lid part 203 side of the second space 212 is about 150°C when the GaN layer 122 is grown. The part of the heating device 240 that heats the second space 212 is arranged and driven so that the temperature is gradually lowered from the part on the first space 211 side toward the second lid part 203 side. More specifically, the second space 212 is heated so that the gallium trichloride gas exists as a gas and has a part at a temperature at which the gallium monochloride gas solidifies. In this embodiment, the second space 212 is heated so that the portion on the second lid portion 203 side where the first supply pipe 310 is provided reaches that temperature, as described below.

[0040] In generation apparatus 20, the other end of first supply pipe 310 is provided on second lid 203. Although not shown, a heating device is also disposed around first supply pipe 310. First supply pipe 310 is heated to, for example, about 150° C. when growing GaN layer 122.

[0041] In addition, the first supply pipe 310 in this embodiment is provided with an exhaust pipe 410 via a switching unit 400 configured with a valve or the like. The generation apparatus 20 is connected to the growth apparatus 10 and one of the exhaust pipes 410 by the switching unit 400.

[0042] The above is the configuration of the GaN layer manufacturing apparatus in this embodiment. Next, a method for manufacturing the GaN layer 122 using the above GaN layer manufacturing apparatus will be described with reference to FIG.

[0043] 2, first, in step S101, seed substrate 121 is placed on one surface 120a of pedestal 120. In this embodiment, seed substrate 121 is placed so that the growth surface of GaN layer 122 is the nitrogen surface, as described above. Then, pedestal 120 is rotated via shaft 131 by rotation displacement mechanism 132, and the position of pedestal 120 is adjusted. Furthermore, when GaN layer 122 (described later) is being grown, the height of the pedestal is adjusted in accordance with the growth rate of GaN layer 122. This keeps the height of the growth surface of GaN layer 122 almost constant, making it possible to effectively control the temperature distribution of the growth surface temperature.

[0044] Next, in step S102, carrier gas is supplied to the growth vessel 100. Then, in step S103, the heating devices 140 and 240 are driven. Specifically, the heating device 140 is driven so that the temperature around the seed substrate 121 arranged in the growth vessel 100 becomes about 1000 to 1300°C. The heating device 240 is driven so that the first space 211 in the generation vessel 200 becomes about 800 to 900°C, and the portion of the second space 212 on the second lid part 203 side becomes about 150°C. Furthermore, although not shown, the heating devices arranged around these are driven so that the first supply pipe 310 is also about 150°C.

[0045] Thereafter, in step S104, ammonia gas is supplied to the growth vessel 100. Note that the supply of ammonia gas is preferably started after the heating device 140 is driven and in a state where the temperature around the seed substrate 121 is 500° C. or lower in order to prevent nitrogen loss.

[0046] Next, in step S105, the switching unit 400 is adjusted to connect the generation device 20 to the exhaust pipe 410 so that the gas from the generation device 20 is exhausted from the exhaust pipe 410.

[0047] Next, in step S106, chlorine gas is guided from second guide pipe 232 to second space 212. At this time, since gas from generation apparatus 20 is exhausted from exhaust pipe 410 by switching unit 400, it is possible to prevent chlorine gas from being directly guided into growth apparatus 10, and it is possible to prevent seed substrate 121 from being etched by chlorine gas.

[0048] Next, in step S107, after a predetermined period of time has elapsed since step S106 (for example, 10 seconds), chlorine gas is guided from the first induction pipe 231 to the first space 211. As a result, in the first space 211, the metal gallium 220 reacts with the chlorine gas to generate gallium monochloride gas. Then, this gallium monochloride gas flows into the second space 212, whereby it reacts with the chlorine gas guided to the second space 212 to generate gallium trichloride gas. In this case, the second space 212 of this embodiment is provided with a partition wall 214. Therefore, the gas guided to the second space 212 is more likely to collide with the partition wall 214 as a high-temperature portion, and the flow distance becomes longer. Therefore, it is possible to suppress the gallium monochloride gas from remaining without reacting with the chlorine gas.

[0049] The predetermined period in step S107 is set to, for example, a period determined by an experiment or the like until step S106 is performed and chlorine gas fills the second space 212. The predetermined period in step S107 is set to, for example, a period until the concentration of chlorine gas exhausted from the exhaust pipe 410 becomes equal to or greater than a predetermined threshold.

[0050] Next, in step S108, after a predetermined period of time has elapsed since step S107 (e.g., 30 seconds), switching unit 400 is adjusted to connect generation apparatus 20 to growth apparatus 10 so that gas from generation apparatus 20 is supplied to growth apparatus 10. As a result, ammonia gas and gallium trichloride gas flow and are supplied to seed substrate 121, and GaN layer 122 is grown on the surface of seed substrate 121.

[0051] The predetermined period in step S108 is set to a period after step S107 is performed and gallium monochloride gas completely reacts with gallium trichloride gas, for example, through experiments. This can prevent clogging and the like from occurring in the portion of the first supply pipe 310 on the growth apparatus 10 side from the switching unit 400. That is, gallium monochloride gas is a material with a higher melting point than gallium trichloride gas and is a material that is more easily solidified than gallium trichloride gas. Therefore, by connecting the generation device 20 and the growth apparatus 10 after gallium monochloride gas completely reacts with gallium trichloride gas, it is possible to prevent clogging and the like from occurring in the portion of the first supply pipe 310 on the growth apparatus 10 side from the switching unit 400.

[0052] In addition, the second space 212 of this embodiment is heated so as to have a portion at a temperature where the gallium trichloride gas exists as a gas and the gallium monochloride gas solidifies. Therefore, if gallium monochloride gas remains in the second space 212, the gallium monochloride gas is likely to solidify in the generation vessel 200. Therefore, it is possible to prevent the first supply pipe 310 from being clogged due to the gallium monochloride gas entering and solidifying in the first supply pipe 310.

[0053] According to the present embodiment described above, the GaN layer 122 is grown as follows. That is, first, the generator 20 and the exhaust pipe 410 are in communication with each other. Next, chlorine gas is introduced from the second induction pipe 232 to the generator 20, and then the chlorine gas is introduced from the first induction pipe 231 to the generator 20. Then, the generator 20 and the growth apparatus 10 are in communication with each other, and gallium trichloride gas is supplied from the generator 20 to the growth apparatus 10. Therefore, it is possible to prevent the chlorine gas from being directly supplied from the generator 20 to the growth apparatus 10, and it is possible to prevent the seed substrate 121 from being scraped by the chlorine gas. Therefore, it is possible to prevent the quality of the GaN layer 122 from being deteriorated.

[0054] In addition, by inducing chlorine gas from the second induction pipe 232 first, it is possible to prevent gallium monochloride gas from entering the first supply pipe 310 from the generator 20. Therefore, it is possible to prevent the first supply pipe 310 from being clogged due to gallium monochloride gas entering the first supply pipe 310 and solidifying.

[0055] (1) In this embodiment, the second space 212 is heated so that it has a portion at a temperature at which the gallium trichloride gas solidifies while the gallium monochloride gas exists as a gas when the GaN layer 122 is grown. For this reason, if gallium monochloride gas remains in the second space 212, the gallium monochloride gas tends to solidify in the generation vessel 200. Therefore, it is possible to prevent the first supply pipe 310 from being clogged due to the gallium monochloride gas entering and solidifying in the first supply pipe 310 having a small cross-sectional area.

[0056] Second embodiment A second embodiment will be described. This embodiment differs from the first embodiment in that it does not include the exhaust pipe 410 and the switching unit 400. As the rest is the same as the first embodiment, a description thereof will be omitted here.

[0057] 3, the GaN layer manufacturing apparatus of this embodiment does not include an exhaust pipe 410 and a switching unit 400. In other words, the growth apparatus 10 is supplied with the gas from the generation apparatus 20 as it is.

[0058] Next, a method for manufacturing the GaN layer 122 using the GaN layer manufacturing apparatus of this embodiment will be described with reference to FIG.

[0059] 4, in steps S201 to S204, the same processes as steps S101 to S104 are performed. Then, in step S205, chlorine gas is guided from the first induction pipe 231 to the first space 211. As a result, in the first space 211, the metal gallium 220 and the chlorine gas react with each other to generate gallium monochloride.

[0060] Next, in step S206, after a predetermined period of time has elapsed since step S205 (for example, 10 seconds), chlorine gas is guided from the second induction pipe 232 to the second space 212. As a result, gallium monochloride reacts with chlorine gas to generate gallium trichloride. Then, by guiding chlorine gas from the second induction pipe 232 to the first space 211 after guiding chlorine gas from the first induction pipe 231 to the first space 211 in this way, it is possible to prevent chlorine gas from being directly guided into the growth apparatus 10. Therefore, it is possible to prevent the seed substrate 121 from being scraped by chlorine gas. Then, gallium trichloride gas is supplied into the growth vessel 100, so that the GaN layer 122 grows on the surface of the seed substrate 121. The predetermined period of time in step S206 is, for example, a time until gallium monochloride flows sufficiently in the second space 212 by performing step S205 through an experiment or the like.

[0061] According to the present embodiment described above, when growing GaN layer 122, chlorine gas is guided from first induction pipe 231 to first space 211, and then chlorine gas is guided from second induction pipe 232 to first space 211. This makes it possible to prevent chlorine gas from being directly guided into growth apparatus 10. This makes it possible to prevent seed substrate 121 from being chipped by chlorine gas, for example.

[0062] (Other embodiments) Although the present disclosure has been described based on the embodiment, it is understood that the present disclosure is not limited to the embodiment or structure. The present disclosure also encompasses various modifications and modifications within the equivalent range. In addition, various combinations and forms, as well as other combinations and forms including only one element, more than one element, or less than one element, are also within the scope and concept of the present disclosure.

[0063] For example, in each of the above-mentioned embodiments, the configuration of the growth device 10 may be appropriately changed. For example, in each of the above-mentioned embodiments, an example is described in which the rotation displacement mechanism 132 that rotates and displaces the pedestal 120 is provided, but the pedestal 120 may be rotated without being displaced. In addition, the outlet 104 may be disposed on the first lid 102 side of the growth container 100.

[0064] In each of the above embodiments, the second space 212 does not necessarily have to be provided with the partition wall 214. [Explanation of symbols]

[0065] 10 Growth equipment 20 Generator 100 growing containers 101a Hollow part 120 Pedestal 120a one side 121 species substrate 122 GaN layer 310 Supply piping 400 Switching section 410 Exhaust piping

Claims

1. A gallium nitride layer manufacturing apparatus for growing a gallium nitride layer (122) on a seed substrate (121) by supplying a gallium-based gas and an ammonia-based gas, comprising: a growth apparatus (10) having a cylindrical growth vessel (100) in which the gallium nitride layer is grown in a hollow portion (101a) constituting a reaction chamber; a pedestal (120) disposed within the hollow portion of the growth chamber, on which the seed substrate on which the gallium nitride layer is grown is disposed; A generator (20) for generating gallium trichloride gas as the gallium-based gas; a supply pipe (310) connecting the generator and the growth apparatus and supplying the gallium trichloride gas generated in the generator to the growth apparatus; an exhaust pipe (410) is provided on the supply pipe via a switching unit (400), and the switching unit switches between a communication state between the generation apparatus and the growth apparatus and a communication state between the generation apparatus and the exhaust pipe; The generation device includes a first space (211) in which metallic gallium (220) is disposed, a second space (212) located between the first space and the supply pipe, a first induction pipe (231) for inducing chlorine gas to the first space, and a second induction pipe (232) for inducing chlorine gas to the second space, and the chlorine gas is introduced from the first induction pipe after being introduced from the second induction pipe; The switching unit is adjusted so that the generation apparatus and the exhaust pipe are in a communication state before the chlorine gas is induced from the first induction pipe, and is switched so that the generation apparatus and the growth apparatus are in a communication state after the chlorine gas is induced from the first induction pipe.

2. A method for producing a gallium nitride layer, comprising growing a gallium nitride layer (122) on a seed substrate (121) by supplying a gallium-based gas and an ammonia-based gas, the method comprising the steps of: a growth apparatus (10) having a cylindrical growth vessel (100) in which the gallium nitride layer is grown in a hollow portion (101a) constituting a reaction chamber; a pedestal (120) disposed within the hollow portion of the growth chamber, on which the seed substrate on which the gallium nitride layer is grown is disposed; A generator (20) for generating gallium trichloride gas as the gallium-based gas; a supply pipe (310) connecting the generator and the growth apparatus and supplying the gallium trichloride gas generated in the generator to the growth apparatus; an exhaust pipe (410) is provided on the supply pipe via a switching unit (400), and the switching unit switches between a communication state between the generation apparatus and the growth apparatus and a communication state between the generation apparatus and the exhaust pipe; The generating apparatus includes a gallium nitride layer manufacturing apparatus having a first space (211) in which metallic gallium (200) is placed, a second space (212) located between the first space and the supply pipe, a first induction pipe (231) for inducing chlorine gas to the first space, and a second induction pipe (232) for inducing chlorine gas to the second space; placing the seed substrate in the growth chamber; supplying the seed substrate with gallium trichloride gas generated in the generator to grow the gallium nitride layer on the seed substrate; The method for manufacturing a gallium nitride layer includes the steps of: deriving the chlorine gas from the second induction pipe while the exhaust pipe and the generation apparatus are in communication with each other; deriving the chlorine gas from the first induction pipe after deriving the chlorine gas from the second induction pipe; and connecting the growth apparatus and the generation apparatus with each other after deriving the chlorine gas from the first induction pipe.

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