Gallium nitride layer manufacturing apparatus and method for manufacturing gallium nitride layer

Abstract

To restrain deterioration of a quality of a GaN layer.SOLUTION: The gallium nitride layer manufacturing device comprises: a growth device 10 growing a GaN layer 122 at a hollow part 101a constituting a reaction chamber and having a tubular growing container 100; a pedestal 120, which is arranged in the hollow part 101a of the growing container 100 and on which a seed substrate 121 for growing the GaN layer 122 is arranged; a first supply piping 310 for supplying first raw material gas containing gallium trichloride gas as gallium-base gas for growing the GaN layer 122 to the growth device 10; and a second supply piping 320 for supplying second raw material gas containing ammonia-base gas for growing the GaN layer to the growth device 10. The growing container 10 is provided with a collision part 111 heated and caused to collide with the first raw material gas. After the first raw material gas collides with the collision part 111, it reacts with the second raw material gas, so as to grow the GaN layer 122.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a GaN layer manufacturing apparatus and a GaN layer manufacturing method for growing a GaN layer on a seed substrate made of gallium nitride (hereinafter, also simply referred to as GaN). [Background technology]

[0002] Conventionally, a GaN layer manufacturing apparatus and a manufacturing method thereof have been proposed, which use a hydride vapor phase epitaxy to grow a GaN layer on a seed substrate made of GaN (see, for example, Patent Document 1). Specifically, the manufacturing apparatus includes a growth apparatus on which a seed substrate is placed and on which a GaN layer is grown, and a generation apparatus that generates gallium trichloride gas as a raw material gas for growing the GaN layer. The manufacturing apparatus also includes a first supply pipe that connects the growth apparatus and the generation apparatus and supplies the gas generated by the generation apparatus to the growth apparatus, and a second supply pipe that supplies ammonia gas as a raw material gas for growing the GaN layer to the growth apparatus.

[0003] The growth apparatus has a growth vessel in which a seed substrate is placed, and is configured so that gallium trichloride gas generated in the generation device is supplied into the growth vessel through a first supply pipe, and ammonia gas is supplied into the growth vessel through a second supply pipe.

[0004] The generating device includes a generating vessel in which metallic gallium is disposed. The generating vessel includes a first space in which metallic gallium is disposed, and a second space communicating with the first space. The generating vessel also includes a first induction pipe for guiding chlorine gas to the first space, and a second induction pipe for guiding chlorine gas to the second space.

[0005] In the generator, when chlorine gas is introduced from the first induction pipe, the metallic gallium reacts with the chlorine gas to generate gallium monochloride gas, as shown in the reaction of Chemical Formula 1 below.

[0006] (Chemical formula 1) Ga+1 / 2Cl 2 →GaCl In addition, in the generation device, when chlorine gas is introduced into the generation vessel from the second induction pipe, the gallium monochloride gas and the chlorine gas react with each other to generate gallium trichloride gas, as shown in the following chemical formula 2.

[0007] (Chemical formula 2) GaCl + Cl 2 →GaCl 3 In such a GaN layer manufacturing apparatus, gallium trichloride gas and ammonia gas are supplied onto the seed substrate, and a GaN layer is grown by the reaction of Chemical Formula 3 below.

[0008] (C3)GaCl 3 +NH 3 →GaN+3HCl [Prior art documents] [Patent documents]

[0009] [Patent Document 1] Patent No. 5787324 Summary of the Invention [Problem to be solved by the invention]

[0010] However, the inventors have confirmed that polymers may be generated when gallium trichloride gas and ammonia gas meet at low temperatures, and the quality of the GaN layer may be degraded if the GaN layer is grown in the presence of polymers.

[0011] In view of the above, an object of the present invention is to provide a GaN layer manufacturing apparatus and a GaN layer manufacturing method that can suppress deterioration in the quality of the GaN layer. [Means for solving the problem]

[0012] In order to achieve the above object, claim 1 provides a GaN layer manufacturing apparatus for growing a GaN layer (122) by supplying a gallium-based gas and an ammonia-based gas onto a seed substrate (121), the apparatus comprising: a growth apparatus (10) having a cylindrical growth vessel (100) in which a GaN layer is grown in a hollow portion (101a) constituting a reaction chamber; a base (120) disposed within the hollow portion of the growth vessel and on which a seed substrate on which a GaN layer is grown is disposed; a first supply pipe (310) for supplying a first source gas containing gallium trichloride gas as a gallium-based gas for growing the GaN layer to the growth apparatus; and a second supply pipe (320) for supplying a second source gas containing an ammonia-based gas for growing the GaN layer to the growth apparatus, the growth vessel being provided with a collision portion (111) which is heated and against which the first source gas is collided, the first source gas is made to react with the second source gas after colliding with the collision portion to grow a GaN layer, The growth vessel is supplied with hydrogen gas that collides with the collision section together with the first source gas, and the first source gas and the hydrogen gas are reacted to generate gallium monochloride gas, and then the gallium monochloride gas is reacted with the second source gas to grow a GaN layer. .

[0013] According to this, the first source gas containing gallium trichloride gas reacts with the second source gas after colliding with the heated collision part, which prevents the first source gas and the second source gas from joining together at a low temperature, thereby preventing the quality of the GaN layer from deteriorating due to the formation of polymers.

[0014] In addition, claims 4 A method for producing a GaN layer using the GaN layer production apparatus of claim 1, comprising the steps of: supplying a first source gas from a first supply pipe to a growth vessel, and simultaneously supplying a second source gas from a second supply pipe to the growth vessel; causing the first source gas to collide with a collision section, and then reacting the first source gas with the second source gas to grow a GaN layer. In growing the GaN layer, hydrogen gas is supplied to collide with the collision section, the first source gas and the hydrogen gas are reacted to generate gallium monochloride gas, and the gallium monochloride gas is then reacted with the second source gas to grow the GaN layer. .

[0015] According to this, the first source gas containing gallium trichloride gas reacts with the second source gas after colliding with the heated collision part, which prevents the first source gas and the second source gas from joining together at a low temperature, thereby preventing the quality of the GaN layer from deteriorating due to the formation of polymers.

[0016] The reference symbols in parentheses attached to each component indicate an example of the correspondence between the component and specific components described in the embodiments described below. [Brief description of the drawings]

[0017] [Figure 1] 1 is a schematic cross-sectional view of a GaN layer manufacturing apparatus according to a first embodiment. [Diagram 2] FIG. 11 is a schematic cross-sectional view of a GaN layer manufacturing apparatus according to a second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be denoted by the same reference numerals.

[0019] (First embodiment) The first embodiment will be described with reference to the drawings. First, the configuration of a GaN layer manufacturing apparatus will be described with reference to Fig. 1. The GaN layer manufacturing apparatus shown in Fig. 1 is installed with the up-down direction of the paper surface of Fig. 1 as the top-to-bottom direction, and grows a GaN layer 122 on a seed substrate 121.

[0020] 1, the GaN layer manufacturing apparatus includes a growth apparatus 10 for growing a GaN layer 122, and a generation apparatus 20 for generating gallium trichloride gas as a source gas for growing the GaN layer 122. The GaN layer manufacturing apparatus also includes first to third supply pipes 310 to 330 for supplying various gases for growing the GaN layer 122 to the growth apparatus 10, and the like.

[0021] The growth apparatus 10 includes a growth vessel 100, a heating vessel 110, a base 120, a shaft 131, a rotation displacement mechanism 132, a heating device 140, and the like.

[0022] The growth vessel 100 has a cylindrical tube portion 101 having a hollow portion 101a that constitutes a reaction chamber, and a first lid portion 102 and a second lid portion 103 that are provided in the tube portion 101 and close the hollow portion 101a. The tube portion 101 is made of quartz glass or the like, and is cylindrical in this embodiment. The first lid portion 102 and the second lid portion 103 are made of SUS or the like, and the first lid portion 102 is provided at an end portion of the tube portion 101 that is the top side, and the second lid portion 103 is provided at an end portion of the tube portion 101 that is the bottom side. The growth vessel 100 has a structure in which other components for growing the GaN layer 122 are arranged in the hollow portion 101a, and the pressure in the hollow portion 101a can be reduced by vacuuming.

[0023] The growth vessel 100 is also provided with first to third supply pipes 310 to 330 for supplying various gases for growing the GaN layer 122. In this embodiment, the first lid 102 is provided with the first to third supply pipes 310 to 330. Specifically, the first lid 102 is provided with a first supply pipe 310 for supplying gallium trichloride gas into the growth vessel 100 as a gallium-based gas for growing the GaN layer 122 generated by the generation device 20. The first lid 102 is provided with a second supply pipe 320 for supplying ammonia gas into the growth vessel 100 as an ammonia-based gas for growing the GaN layer 122 together with the gallium trichloride gas. The first lid 102 is provided with a third supply pipe 330 for supplying nitrogen gas into the growth vessel 100 as a carrier gas.

[0024] In this embodiment, the gas supplied from the first supply pipe 310 into the growth vessel 100 corresponds to the first source gas, and the gas supplied from the second supply pipe 320 into the growth vessel 100 corresponds to the second source gas.

[0025] The first supply pipe 310 of this embodiment is arranged so that one end is located inside the heating container 110 described below. On the other hand, the second supply pipe 320 of this embodiment is arranged so as to protrude from a bottom 111 of the heating container 110 described below. In other words, the second supply pipe 320 is arranged so as to supply ammonia gas to the outside of the heating container 110. Moreover, the third supply pipe 330 is arranged so that one end is located closer to the first lid 102 than one ends of the first supply pipe 310 and the second supply pipe 320.

[0026] The first supply pipe 310 is provided with one end on the growth apparatus 10 side and the other end on the opposite side to the generation apparatus 20. In other words, the first supply pipe 310 is arranged to connect the growth apparatus 10 and the generation apparatus 20. The first supply pipe 310 has a smaller cross-sectional area normal to the gas flow direction than the generation vessel 200 described later. Although not shown, the second supply pipe 320 and the third supply pipe 330 have one end on the growth apparatus 10 and the other end on the opposite side to the respective gas supply sources.

[0027] Furthermore, the growth vessel 100 is provided with an exhaust port 104 for exhausting unreacted gases and the like that have not contributed to the growth of the GaN layer 122. In this embodiment, the exhaust port 104 is provided in the portion of the growth vessel 100 on the second lid 103 side.

[0028] The heating container 110 is made of, for example, alumina, zirconia, pyrolytic carbon, graphite, or the like, and is formed in a cylindrical shape having a hollow portion 110a. The heating container 110 is provided on the first lid portion 102 so that various gases from the first to third supply pipes 310 to 330 are supplied into the hollow portion 110a.

[0029] Here, the heating container 110 of this embodiment is in the shape of a bottomed cylinder having a bottom 111, and a through hole 112 is formed in approximately the center of the bottom 111. In other words, the heating container 110 of this embodiment has a flange portion protruding toward the central axis of the heating container 110 at the tip portion on the side opposite to the first lid portion 102. In this embodiment, the bottom 111 corresponds to the collision portion.

[0030] The first supply pipe 310 is disposed so that one end is located on the bottom 111. In other words, the first supply pipe 310 is disposed so that the gas supplied from the first supply pipe 310 collides with the bottom 111. Therefore, the gas supplied from the first supply pipe 310 is discharged from the heating container 110 through the through hole 112 after colliding with the bottom 111. In addition, in the heating container 110 of this embodiment, the gas from the first supply pipe 310 is supplied to the hollow portion 110a, and the through hole 112 is formed in the bottom 111. Therefore, it can be said that the through hole 112 is formed in the bottom 111, the cross-sectional area of ​​which is reduced when the flow direction of the gas supplied from the first supply pipe 310 is the normal direction.

[0031] On the other hand, as described above, the second supply pipe 320 is arranged such that one end protrudes from the bottom 111. In other words, the second supply pipe 320 is arranged such that the gas supplied from the second supply pipe 320 is less likely to collide with the bottom 111 of the heating container 110 (described later) than the gas supplied from the first supply pipe 310. This makes it possible to suppress the generation of hydrogen gas due to the ammonia gas colliding with the heated portion and being thermally decomposed.

[0032] Pedestal 120 is a member on which seed substrate 121 made of GaN for growing GaN layer 122 is placed, and is placed below heating vessel 110. Pedestal 120 is made of a material that is difficult to thermally etch, such as graphite whose surface is coated with a high-melting point metal carbide such as PbN, SiC, TaC, or NbC. Seed substrate 121 is attached to one surface 120a of pedestal 120 located on the first to third supply pipes 310 to 330 side, and GaN layer 122 is grown on the surface of seed substrate 121.

[0033] In this embodiment, as described later, GaN layer 122 is grown by supplying gallium trichloride gas and ammonia gas onto seed substrate 121. It has been reported that when gallium trichloride gas is used to grow GaN layer 122, GaN layer 122 grows easily when the growth surface of seed substrate 121 is a nitrogen surface, and does not grow easily when the growth surface of seed substrate 121 is a gallium surface. Therefore, in this embodiment, seed substrate 121 is arranged so that the growth surface of GaN layer 122 is a nitrogen surface. In other words, seed substrate 121 is arranged so that the surface opposite to pedestal 120 is a nitrogen surface.

[0034] In addition, the pedestal 120 has a shaft 131 connected to a surface opposite to the surface on which the seed substrate 121 is disposed. The pedestal 120 is rotated with the rotation of the shaft 131, and is displaced together with the shaft 131 as the shaft 131 is displaced along the axial direction of the growth vessel 100 (i.e., the vertical direction in the plane of the paper in FIG. 1). The shaft 131, like the pedestal 120, is made of a material that is difficult to be thermally etched, and is made of, for example, graphite or the like having a surface coated with a high-melting point metal carbide such as PbN, SiC, TaC, or NbC.

[0035] Rotational displacement mechanism 132 is connected to shaft 131, and is a member that rotates and displaces shaft 131. Rotational displacement mechanism 132 adjusts the position of shaft 131 (i.e., seed substrate 121) so that the temperature of the growth surface of GaN layer 122 can be adjusted to a temperature suitable for growth as GaN layer 122 grows. Although not particularly limited, rotational displacement mechanism 132 in this embodiment rotates shaft 131 so that pedestal 120 rotates at least 200 times per minute.

[0036] Heating device 140 heats the inside of heating vessel 110 and growth vessel 100, and is configured with a heating coil such as an induction heating coil or a direct heating coil, and is disposed so as to surround the periphery of growth vessel 100. Heating device 140 of the present embodiment is driven so that the periphery of seed substrate 121 becomes about 1000 to 1300° C. when growing GaN layer 122.

[0037] The generating device 20 includes a generating vessel 200 and a heating device 240. The generating vessel 200 includes a cylindrical tube portion 201 having a hollow portion 201a, and a first lid portion 202 and a second lid portion 203 provided in the tube portion 201 to close the hollow portion 201a. The tube portion 201 is made of quartz glass or the like, and is cylindrical in this embodiment. The first lid portion 202 and the second lid portion 203 are made of SUS or the like. The first lid portion 202 is provided at an end of the tube portion 201 opposite to the side to which the first supply pipe 310 is connected, and the second lid portion 203 is provided at an end of the tube portion 201 to which the first supply pipe 310 is connected. The generating vessel 200 is structured such that the pressure in the hollow portion 201a can be reduced by vacuuming, similar to the growth vessel 100.

[0038] The generating vessel 200 is provided with a partition wall 213 that partitions the hollow portion 201a into a first space 211 on the first lid portion 202 side and a second space 212 on the second lid portion 203 side. However, this partition wall 213 is formed so as to maintain communication between the first space 211 and the second space 212. In other words, the partition wall 213 is provided so as not to completely partition the first space 211 and the second space 212.

[0039] Metallic gallium 220 is disposed in the first space 211. In this embodiment, the second space 212 is provided with a partition wall 214 for increasing the wall surface that comes into contact with the gallium monochloride gas and chlorine gas generated in the first space 211 as described later.

[0040] The generation vessel 200 is also provided with a first induction pipe 231 and a second induction pipe 232 for inducing chlorine gas into the generation vessel 200. In this embodiment, the first induction pipe 231 is provided in the first cover portion 202 so as to be able to induce chlorine gas into the first space 211. The second induction pipe 232 is provided in the tube portion 201 so as to be able to induce chlorine gas into the second space 212.

[0041] The heating device 240 heats the inside of the generating vessel 200, and is, for example, a resistance heater or the like, and is arranged around the generating vessel 200. The heating device 240 of this embodiment is driven by appropriately adjusting the location and density so that the first space 211 is hotter than the second space 212. For example, the heating device 240 of this embodiment is arranged and driven so that the first space 211 is about 800 to 900°C and the temperature of the second lid part 203 side of the second space 212 is about 150°C when the GaN layer 122 is grown. The part of the heating device 240 that heats the second space 212 is arranged and driven so that the temperature is gradually lowered from the part on the first space 211 side toward the second lid part 203 side. More specifically, the second space 212 is heated so that the gallium trichloride gas exists as a gas and has a part at a temperature at which the gallium monochloride gas solidifies. In this embodiment, the second space 212 is heated so that the portion on the second lid portion 203 side where the first supply pipe 310 is provided reaches that temperature, as described below.

[0042] In generation apparatus 20, the other end of first supply pipe 310 is provided on second lid 203. Although not shown, a heating device is also disposed around first supply pipe 310. First supply pipe 310 is heated to, for example, about 150° C. when growing GaN layer 122.

[0043] The above is the configuration of the GaN layer manufacturing apparatus in this embodiment. Next, a method for manufacturing the GaN layer 122 using the above GaN layer manufacturing apparatus will be described.

[0044] First, the above-mentioned GaN layer manufacturing apparatus is prepared, and seed substrate 121 is placed on one surface 120a of pedestal 120. In this embodiment, seed substrate 121 is placed so that the growth surface of GaN layer 122 is the nitrogen surface, as described above. Then, pedestal 120 is rotated via shaft 131 by rotary displacement mechanism 132, and the position of pedestal 120 is adjusted. Also, while GaN layer 122 is being grown, the height of the pedestal is adjusted in accordance with the growth rate of GaN layer 122. This keeps the height of the growth surface of the GaN layer almost constant, making it possible to effectively control the temperature distribution of the growth surface temperature.

[0045] Next, the heating devices 140 and 240 are driven. Specifically, the heating device 140 is driven so that the temperature around the seed substrate 121 arranged in the growth vessel 100 becomes about 1000 to 1300°C. The heating device 240 is driven so that the first space 211 in the generation vessel 200 becomes about 800 to 900°C, and the portion of the second space 212 on the second lid part 203 side becomes about 150°C. Furthermore, although not shown, the heating devices arranged around these are driven so that the first supply pipe 310 also becomes about 150°C.

[0046] Next, chlorine gas is introduced from the first induction pipe 231 and the second induction pipe 232 into the generation device 20. As a result, in the first space 211, the metal gallium 220 reacts with the chlorine gas to generate gallium monochloride gas. In addition, as the gallium monochloride gas flows into the second space 212, the gallium monochloride gas reacts with the chlorine gas introduced into the second space 212 to generate gallium trichloride gas. Then, the gallium trichloride gas is supplied to the growth device 10 through the first supply pipe 310. In this case, the second space 212 of this embodiment is provided with a partition wall 214. Therefore, the gas introduced into the second space 212 is more likely to collide with the partition wall 214 as a high-temperature portion and the flow distance becomes longer. Therefore, it is possible to suppress the gallium monochloride gas from remaining without reacting with the chlorine gas.

[0047] Ammonia gas is supplied to growth vessel 100 from second supply pipe 320, and carrier gas is supplied to growth vessel 100 from third supply pipe 330. The supply of ammonia gas is preferably started after heating device 140 is driven, when the temperature around seed substrate 121 is 500° C. or lower to prevent nitrogen loss. As a result, ammonia gas and gallium trichloride gas flow and are supplied to seed substrate 121, and GaN layer 122 is grown on the surface of seed substrate 121.

[0048] At this time, the gallium trichloride gas supplied from first supply pipe 310 collides with bottom 111 of heated heating container 110, and then flows onto seed substrate 121 through through holes 112. Therefore, the gallium trichloride gas is supplied onto seed substrate 121 in a heated state. This prevents ammonia gas and gallium trichloride gas from joining together in a low-temperature state, and prevents deterioration in the quality of GaN layer 122 due to the formation of a polymer.

[0049] In addition, in this embodiment, the gas in the heating container 110 is supplied onto the seed substrate 121 through the through-hole 112. That is, the gas in the heating container 110 is supplied onto the seed substrate 121 through the through-hole 112 having a small cross-sectional area normal to the gas flow direction. Therefore, the gallium trichloride gas supplied into the heating container 110 is supplied onto the seed substrate 121 with a high flow rate. Therefore, even if a polymer is generated outside the heating container 110, the polymer is prevented from flowing back into the heating container 110. This can prevent the gallium trichloride gas in the heating container 110 from being difficult to be supplied onto the seed substrate 121 through the through-hole 112.

[0050] Furthermore, the second space 212 of this embodiment is heated so as to have a portion at a temperature where the gallium trichloride gas exists as a gas and the gallium monochloride gas solidifies. Therefore, if gallium monochloride gas remains in the second space 212, the gallium monochloride gas tends to solidify in the generation vessel 200. Therefore, it is possible to prevent the first supply pipe 310 from being clogged by the gallium monochloride gas entering and solidifying in the first supply pipe 310.

[0051] According to the present embodiment described above, the gallium trichloride gas generated in the generation device 20 collides with the bottom 111 of the heated heating container 110, and is then supplied onto the seed substrate 121. This prevents the ammonia gas and the gallium trichloride gas from joining together at a low temperature, and prevents the quality of the GaN layer 122 from deteriorating due to the formation of a polymer.

[0052] (1) In this embodiment, the heating vessel 110 is formed with a through hole 112 having a smaller cross-sectional area normal to the gas flow direction than the portion to which the gallium trichloride gas is supplied. The gallium trichloride gas is then supplied onto the seed substrate 121 through the through hole 112. Therefore, the gallium trichloride gas supplied into the heating vessel 110 is supplied onto the seed substrate 121 with a high flow rate. Therefore, even if a polymer is generated outside the heating vessel 110, the polymer is prevented from flowing back into the heating vessel 110. This makes it possible to prevent the gallium trichloride gas in the heating vessel 110 from being difficult to supply onto the seed substrate 121 through the through hole 112, and further to prevent the quality of the GaN layer 122 from deteriorating.

[0053] (2) In this embodiment, second supply pipe 320 is disposed so that ammonia gas is less likely to collide with bottom 111 than gallium trichloride gas. Therefore, compared to the case where ammonia gas collides with bottom 111 in the same manner as gallium trichloride gas, ammonia gas is prevented from being thermally decomposed before reacting with gallium trichloride gas, and the growth of GaN layer 122 is prevented from being hindered.

[0054] (3) In this embodiment, the second space 212 is heated so that it has a portion at a temperature at which the gallium trichloride gas solidifies while the gallium monochloride gas exists as a gas when the GaN layer 122 is grown. For this reason, if gallium monochloride gas remains in the second space 212, the gallium monochloride gas tends to solidify in the generation vessel 200. Therefore, it is possible to prevent the first supply pipe 310 from being clogged due to the gallium monochloride gas entering and solidifying in the first supply pipe 310 having a small cross-sectional area.

[0055] Second embodiment The second embodiment will be described. In this embodiment, a hydrogen gas supply pipe is connected to the first supply pipe 310 in comparison with the first embodiment. As the rest is the same as the first embodiment, a description thereof will be omitted here.

[0056] In the GaN layer manufacturing apparatus of this embodiment, as shown in FIG. 2, a hydrogen gas supply pipe 340 is connected to a first supply pipe 310. The hydrogen gas supply pipe 340 is connected to a hydrogen gas generation source (not shown), and hydrogen gas is supplied from the hydrogen gas generation source. A mixed gas of gallium trichloride gas and hydrogen gas generated in the generator 20 is supplied from the first supply pipe 310 to the growth apparatus 10. Although not shown, a backflow prevention safety valve is provided on the first supply pipe 310 at a portion closer to the generator 20 than the portion connected to the hydrogen gas supply pipe 340 in order to prevent hydrogen gas from flowing back to the generator 20.

[0057] Next, a method for manufacturing the GaN layer 122 in this embodiment will be described.

[0058] In this embodiment, when the GaN layer 122 is grown, hydrogen gas is supplied to the hydrogen gas supply pipe 340. Therefore, the gas supplied from the first supply pipe 310 into the heating vessel 110 is a mixed gas of gallium trichloride gas and hydrogen gas. In this embodiment, in order to suppress the reaction between the hydrogen gas and the gallium trichloride gas in the first supply pipe 310, the first supply pipe 310 is maintained at a temperature lower than that in the growth vessel 100, that is, about 150 to 750° C. Then, when the gallium trichloride gas and the hydrogen gas collide with the bottom 111 in the growth apparatus 10, they become gallium monochloride gas by the reaction of the following chemical formula 4.

[0059] (C4)GaCl 3 +H 2 →GaCl+2HCl In this embodiment, the GaN layer 122 is grown by the reaction of Chemical Formula 5 below.

[0060] (C5)GaCl+NH 3 →GaN+HCl+2H 2 In this embodiment, as described above, GaN layer 122 is grown using gallium monochloride gas and ammonia gas. Therefore, GaN layer 122 can be grown on the gallium surface of seed substrate 121, and the selectivity of the growth surface of seed substrate 121 can be improved.

[0061] According to the present embodiment described above, gallium monochloride gas is generated by colliding hydrogen gas with bottom 111 together with gallium trichloride gas. Then, GaN layer 122 is grown on seed substrate 121 by gallium monochloride gas and ammonia gas. Therefore, GaN layer 122 can be grown on the gallium surface of seed substrate 121, and the selectivity of the growth surface of seed substrate 121 can be improved.

[0062] (Other embodiments) Although the present disclosure has been described based on the embodiment, it is understood that the present disclosure is not limited to the embodiment or structure. The present disclosure also encompasses various modifications and modifications within the equivalent range. In addition, various combinations and forms, as well as other combinations and forms including only one element, more than one element, or less than one element, are also within the scope and concept of the present disclosure.

[0063] For example, in each of the above-mentioned embodiments, the configuration of the growth device 10 may be appropriately changed. For example, in each of the above-mentioned embodiments, an example is described in which the rotation displacement mechanism 132 that rotates and displaces the pedestal 120 is provided, but the pedestal 120 may be rotated without being displaced. In addition, the outlet 104 may be disposed on the first lid 102 side of the growth container 100.

[0064] In each of the above embodiments, the second space 212 does not necessarily have to be provided with the partition wall 214. Furthermore, in each of the above embodiments, the configuration of the generation device 20 can be appropriately changed.

[0065] In each of the above embodiments, the heating container 110 may not be provided with the bottom 111, and the first supply pipe 310 may be provided so that the gallium trichloride gas collides with the side surface of the heating container 110. In this case, the side surface of the heating container 110 corresponds to the collision portion.

[0066] Furthermore, in the second embodiment, if gallium trichloride gas and hydrogen gas collide with the collision part to generate gallium monochloride gas, the growth vessel 100 may be provided with the hydrogen gas supply pipe 340 as it is. In other words, gallium trichloride gas and hydrogen gas may be supplied separately to the growth vessel 100. [Explanation of symbols]

[0067] 10 Growth equipment 20 Generator 100 growing containers 101a Hollow part 111 Collision part 120 Pedestal One side of 120a 121 types of substrates 122 GaN layer

Claims

1. A gallium nitride layer manufacturing apparatus for growing a gallium nitride layer (122) on a seed substrate (121) by supplying a gallium-based gas and an ammonia-based gas, comprising: a growth apparatus (10) having a cylindrical growth vessel (100) in which the gallium nitride layer is grown in a hollow portion (101a) constituting a reaction chamber; a pedestal (120) disposed within the hollow portion of the growth chamber, on which the seed substrate on which the gallium nitride layer is grown is disposed; a first supply pipe (310) for supplying a first source gas containing gallium trichloride gas as a gallium-based gas for growing the gallium nitride layer to the growth apparatus; a second supply pipe (320) for supplying a second source gas containing an ammonia-based gas for growing the gallium nitride layer to the growth apparatus; The growth vessel is provided with a collision section (111) which is heated and against which the first source gas is collided, the first source gas is caused to collide with the collision portion and then reacted with the second source gas to grow the gallium nitride layer; a hydrogen gas that collides with the collision section together with the first source gas is supplied to the growth vessel, a gallium nitride layer manufacturing apparatus that reacts the first source gas with the hydrogen gas to generate gallium monochloride gas, and then reacts the gallium monochloride gas with the second source gas to grow the gallium nitride layer.

2. the growth vessel is provided with a heating vessel (110) to which the first source gas is supplied from the first supply pipe, the heating vessel (110) has the collision part (111), and has a through hole (112) formed therein, the through hole having a cross-sectional area smaller than that of a part to which the first source gas is supplied, The gallium nitride layer manufacturing apparatus according to claim 1 , wherein the first source gas is caused to collide with the first source gas in the collision section and then supplied onto the seed substrate through the through hole.

3. 3 . The gallium nitride layer manufacturing apparatus according to claim 1 , wherein the second supply pipe is disposed at a position where the second source gas is less likely to collide with the collision portion than the first source gas.

4. A method for producing a gallium nitride layer, comprising growing a gallium nitride layer (122) on a seed substrate (121) by supplying a gallium-based gas and an ammonia-based gas, the method comprising the steps of: a growth apparatus (10) having a cylindrical growth vessel (100) in which the gallium nitride layer is grown in a hollow portion (101a) constituting a reaction chamber; a pedestal (120) disposed within the hollow portion of the growth chamber, on which the seed substrate on which the gallium nitride layer is grown is disposed; a first supply pipe (310) for supplying a first source gas containing gallium trichloride gas as a gallium-based gas for growing the gallium nitride layer to the growth apparatus; a second supply pipe (320) for supplying a second source gas containing an ammonia-based gas for growing the gallium nitride layer to the growth apparatus; preparing a gallium nitride layer manufacturing apparatus in which the growth chamber is provided with a collision unit (111) that is heated and against which the first raw material gas is collided; supplying the first source gas from the first supply pipe to the growth vessel and the second source gas from the second supply pipe to the growth vessel, causing the first source gas to collide with the collision part and then reacting with the second source gas to grow the gallium nitride layer; A method for manufacturing a gallium nitride layer, in which the gallium nitride layer is grown by supplying hydrogen gas that collides with the collision section, reacting the first raw material gas with the hydrogen gas to generate gallium monochloride gas, and then reacting the gallium monochloride gas with the second raw material gas to grow the gallium nitride layer.

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