Modular Wafer Chuck System

Abstract

The present invention relates to a modular wafer chuck system for mounting or clamping and temperature control of a wafer, comprising a chuck for temperature control of a wafer, and a sensor module comprising at least one temperature measurement means for measuring a temperature of a wafer mounted or clamped by the sensor module and / or the chuck and / or the wafer chuck system, wherein the chuck has a mating surface configured to removably couple the sensor module, and the sensor module has a mating surface configured to mount or clamp a wafer and a second mating surface for mating with the mating surface of the chuck.

Description

[Technical field]

[0001] The present invention relates to a modular chuck wafer system for wafer mounting or clamping and temperature control, a sensor module for the modular chuck wafer system, and a method for arranging modules of the modular wafer chuck system. [Background technology]

[0002] Chucks are used, for example in the semiconductor industry, and in particular in microelectronics and microsystems technology, to present wafers for example for inspecting their geometric parameters. Also, structures (electrical components such as diodes, transistors, integrated circuits, etc.) arranged on the wafer can be contacted with a testing means (prober) and various functional tests can be performed. The functional tests include, for example, applying a voltage and / or a current to the structures and measuring certain parameters. In such functional tests, it is particularly advantageous that the wafer or structures of the wafer to be tested have a certain temperature at the start of the test. This has the particular advantage that influences interfering with the test can be reduced or substantially avoided. Also, the temperature of the structure or wafer usually changes due to the interaction with the testing means (prober), in particular at the time of contact of the structure with the prober, and due to the flow of current during the execution of the functional test. It is therefore advantageous to continuously temperature-control the structure or wafer or to control or regulate its temperature so that preferably substantially identical test conditions prevail during the functional test. The temperature range in which the functional tests are performed usually ranges from about -75°C to about 400°C.

[0003] In principle, a number of temperature control elements are provided for heating and / or cooling the chuck or the wafer, the temperature being controlled or regulated by temperature sensors. In particular, the temperature of the chuck or the temperature of the wafer is monitored and, in case of deviation from a target temperature, the corresponding temperature control element is controlled so that the temperature of the wafer or the chuck is always substantially the same and substantially corresponds to the target temperature.

[0004] The chuck preferably has a contact surface that is matched to the structure to be tested on the wafer. In particular, an array of temperature measurements matched to the structure to be tested is advantageous, for example, for obtaining improved temperature monitoring and / or control during functional testing.

[0005] However, the manufacture of different chucks to accommodate the different structures to be tested is very costly and is associated with increased expenditure of time and resources. Summary of the Invention [Problem to be solved by the invention]

[0006] It is therefore an object of the present invention to provide a modular chuck wafer system, a sensor module, and a method for arranging modules of a modular wafer chuck system so that improved functional tests can be performed on wafers having various structures to be tested in a cost and resource saving manner.

[0007] This object is achieved by the subject matter of the independent claims. Advantageous embodiments are the subject matter of the dependent claims. [Means for solving the problem]

[0008] One aspect of the invention relates to a modular wafer chuck system for mounting or clamping and temperature control of a wafer, comprising: a chuck for temperature control of the wafer; and a sensor module comprising at least one temperature measurement means for measuring a temperature of a wafer mounted or clamped by the sensor module and / or the chuck and / or the wafer chuck system, wherein the chuck has a bonding surface configured to releasably bond to the sensor module, and the sensor module has a first bonding surface configured to mount or clamp the wafer and a second bonding surface for bonding with the bonding surface of the chuck.

[0009] In particular, the chuck and / or sensor module are self-contained units and can be used individually and / or independently of one another. In particular, a chuck of a modular wafer chuck system is configured to mate and / or temperature control a wafer without an associated sensor module. Alternatively and / or additionally, a sensor module of the wafer chuck system is configured to mate to any chuck and / or wafer and measure the temperature of the associated wafer.

[0010] Such a modular wafer chuck system has the particular advantage that a sensor module adapted and / or customized to the structure of the wafer being tested can be coupled to a standard chuck. Only the sensor module can be advantageously exchanged or replaced with another for testing the wafer or structure on the wafer. This eliminates the need to manufacture additional chucks to control the wafer temperature for the various wafers or structures being tested, since the sensor module can be combined and / or coupled with any chuck. This further allows for an optimized arrangement of test environments, since a permanently installed chuck can be used to test multiple different wafers and / or structures.

[0011] In particular, the modular wafer chuck system does not have a direct link for transmitting electrical signals between the chuck and the sensor module, in other words, the chuck and the sensor module of the wafer chuck system are self-contained units and can be used individually and / or independently of one another.

[0012] The modularity of the wafer chuck system is characterized in particular by the fact that the chuck and the sensor module are preferably coupled to each other substantially exclusively via their respective coupling surfaces. In intended operation, the coupling surface of the chuck is directed upwards. The second coupling surface of the sensor module for coupling to the chuck is preferably aligned downwards in intended operation, and the first coupling surface of the sensor module for coupling to the wafer is preferably aligned upwards in operation. When the sensor module is arranged on the chuck, the coupling surface of the chuck and the second coupling surface of the sensor module are placed against and / or on top of each other.

[0013] The bonding surface of the chuck and / or the second bonding surface of the sensor module are preferably substantially flat and / or planar and preferably have a substantially circular or rectangular shape. Preferably, the bonding surface of the chuck and the second bonding surface of the sensor module have substantially the same shape and / or size. Through these bonding surfaces, substantially only thermal energy can be transferred from the chuck to the sensor module.

[0014] The chuck of the modular wafer chuck system is preferably coupled to and / or usable with a number of different sensor modules. Alternatively and / or additionally, the chuck may be suitable for temperature control and / or testing of the wafer without a sensor module.

[0015] The modular wafer chuck system also has the advantage that one or more temperature measurement sensors can be positioned in the sensor module and thus close to the wafer or structure to be tested. The design of the sensor module can also be individually adapted to the desired requirements. This also offers advantages, especially with regard to the arrangement of one or more temperature measurement sensors, since there are no components for temperature control of the system, for example, in the sensor module. The modular wafer chuck system therefore allows an increased number and / or optimized distribution of temperature measurement sensors, whereby improved temperature monitoring and / or control, especially during functional testing, can be achieved.

[0016] Preferably, the chuck and / or the sensor module of the modular wafer chuck system comprises at least one vacuum chamber for mounting or clamping the wafer, and more preferably, the chuck and / or the sensor module comprises at least one connection device for connecting a vacuum line.

[0017] To couple the replaceable sensor module to the chuck, the chuck preferably has one or more vacuum chambers on the coupling surface of the chuck, which are connected to a connection device for connection to a vacuum line. In this way, a negative pressure can be generated in the one or more vacuum chambers, which allows the sensor module to be detachably coupled to the coupling surface of the chuck. Advantageously, the sensor module also has one or more vacuum chambers on a second coupling surface of the sensor module, so that the wafer can be mounted or clamped on or by the sensor module. Here, the sensor module can have a connection device for connection to a vacuum line. Alternatively and / or additionally, the sensor module comprises one or more continuous vias, i.e. channels and / or holes, which allow the transfer of negative pressure from the one or more vacuum chambers of the chuck to the wafer. In this way, the wafer can be mounted or clamped to the sensor module without the sensor module needing a connection device for connection to a vacuum line. This configuration is particularly advantageous, since a simplified design and / or simplified manufacture of the sensor module is thus achieved.

[0018] Preferably, the modular wafer chuck system comprises an insulating layer for detachably coupling to the chuck and / or the sensor module. Providing an insulating layer is particularly advantageous in the field of high voltage testing to prevent damage to the chuck and / or the sensor module and the electronics and / or control / measurement devices connected thereto. The insulating layer can be arranged between the chuck and the sensor module and / or between the sensor module and the wafer. The insulating layer is preferably made at least in part from a material with a high resistivity, such as aluminum oxide ceramic, boron nitride, steatite, porcelain, glass, (glass fiber reinforced) plastic, silicone rubber, Teflon and / or epoxy resin. Preferably, the insulating layer has a high thermal conductivity coefficient, so that the insulating layer has little or no effect on the temperature measurement and / or temperature control of the wafer chuck system.

[0019] Further preferably, the replaceable sensor module has a first communication interface for communicating with a temperature measurement unit, the first communication interface being suitable for transmitting an electrical signal from the at least one temperature measurement means and the temperature measurement unit being suitable for receiving an electrical signal from the at least one temperature measurement means of the sensor module. The temperature measurement unit is preferably configured for processing, in particular for combining and / or merging, the measurements from the one or more temperature measurement means. Particularly preferably, the temperature measurement unit is configured at least in part for performing a method for temperature control or regulation according to an aspect of the present application.

[0020] Advantageously, the chuck and / or the sensor module and / or the chuck for temperature control of the mounted or clamped wafer comprises a second communication interface for supplying and / or draining a temperature control medium to and / or from the chuck and / or a third communication interface for communicating with at least one electrical-thermal converter of the chuck.More preferably, the modular wafer chuck system comprises a control unit of the temperature controller connecting to the temperature measurement unit and the second and / or third communication interface for controlling or regulating the temperature of the chuck and / or the sensor module and / or the wafer based on the measured temperature of the sensor module and / or the chuck and / or the wafer.

[0021] The temperature of the chuck is controlled, for example, by control and / or regulation by a temperature control device or control unit, as described later in this application.

[0022] Additionally, the chuck may optionally have one or more temperature measurement means which may also be provided for temperature monitoring and / or temperature control and / or regulation of the chuck by a temperature control device and / or a control unit and / or a temperature measurement unit.

[0023] A further aspect of the invention relates to a sensor module for coupling to a chuck of a modular wafer chuck system, comprising at least one temperature measurement means for measuring a temperature of the sensor module and / or the coupled chuck and / or a wafer mounted or clamped by the sensor module and / or the chuck, a first bonding surface for mounting or clamping the wafer, and a second bonding surface for coupling to the chuck.

[0024] Advantageously, the sensor module further comprises a first communication interface for communicating with a plurality of temperature measuring means, and / or at least one vacuum chamber for mounting or clamping the wafer, and / or a connection device for connecting a vacuum line, and / or a temperature measuring unit for controlling the temperature of the chuck, the first communication interface being suitable for transmitting electrical signals from the at least one temperature measuring means and the temperature measuring unit being suitable for receiving electrical signals from the at least one temperature measuring means of the sensor module.

[0025] The sensor module is a self-contained unit that may have one or more of the above-mentioned features of the sensor module of the modular wafer chuck system. In particular, the sensor module is suitable for being coupled to different chucks and forming therewith a modular wafer chuck system.

[0026] Advantageously, the sensor module is a self-contained and independently usable unit for coupling to a wafer and measuring the temperature of the coupled wafer. The sensor module is preferably not configured to control the temperature of the sensor module and / or the coupled wafer and / or does not have a device for temperature control, in particular does not have an electrical-thermal converter.

[0027] A further aspect of the invention relates to a method for arranging modules of a modular wafer chuck system, comprising the steps of providing a chuck for temperature control of a wafer and coupling a sensor module to a coupling surface of the chuck, the sensor module comprising a first coupling surface configured to mount or clamp a wafer and at least one temperature measurement means for measuring a temperature of a wafer mounted or clamped by the sensor module and / or the chuck and / or the wafer chuck system.

[0028] Preferably, the method further comprises the steps of mounting or clamping a wafer using the first bonding surface of the sensor module, and preferably, temperature control of the chuck, the sensor module, and / or the mounted or clamped wafer.

[0029] Advantageously, the replaceable sensor module is arranged on a bonding surface of the chuck and is mounted or clamped thereon, preferably with the aid of negative pressure and / or vacuum and / or an applied magnetic field. The wafer can be mounted or clamped on a first bonding surface of the sensor module, in particular as described in the present application, where the first bonding surface of the sensor module is preferably arranged on the sensor module on the side opposite the chuck.

[0030] The method may further include arranging an insulating layer between the chuck and the sensor module and / or between the sensor module and the wafer.

[0031] The method is particularly used to prepare a wafer or a structure to be tested disposed thereon for testing. Additionally, the method may include a test process and method steps for controlling or regulating the temperature of a chuck for the wafer according to an aspect of the present application.

[0032] The aspects of the invention described in this process are also suitable for carrying out the methods as described below and / or for having the features of the temperature control apparatus and / or wafer test system as described below.

[0033] A further aspect relates to a method for temperature control or adjustment of a chuck of a modular wafer chuck system for a wafer, the method including steps of detecting a position of a testing means for testing the wafer, determining respective spatial distances between the testing means and a sensor module and / or a chuck and / or a plurality of temperature measurement means of a sensor module for measuring temperatures of a wafer mounted or clamped by the wafer chuck system, selecting at least one temperature measurement means of the plurality of temperature measurement means as a reference temperature measurement means, and controlling or adjusting the temperature of the chuck based on the temperature of the sensor module and / or the chuck and / or the wafer measured by the selected reference temperature measurement means.

[0034] In particular, such a method allows for simplified and advantageous temperature control of the wafer chuck system or the wafer, since the temperature control of the entire chuck is performed substantially uniformly, for example by controlling all means for temperature control of the chuck. The method therefore has low requirements with respect to process handling and / or control or regulation electronics. Also, there is no unnecessary heating and / or cooling of areas of the chuck or wafer that are not critical for the functional tests to be performed.

[0035] Preferably, the sensor module has a platform for clamping the wafer, and the wafer is mounted or clamped by the sensor module, for example by generating a magnetic field or a vacuum.

[0036] Preferably, the sensor module and / or chuck comprises a plurality of temperature measuring means arranged in or on the sensor module and / or chuck for measuring the temperature of the sensor module and / or chuck and / or wafer, preferably at several different positions.

[0037] The wafer is mounted or clamped by the sensor module such that a test means, e.g., probe needles or a probe card, can contact different locations on the wafer surface and test structures located in or on the surface of the wafer, where a number of probe needles or probe fingers are preferably aligned to contact contact surfaces of the structures to be tested and can inspect properties of the structures, e.g., by introducing a current or applying a voltage.

[0038] The temperature of the chuck is preferably controlled or regulated substantially uniformly, i.e. substantially the same or consistently, and particularly preferably by uniform control of one or more means for controlling the temperature of the chuck, such as several electro-thermal converters arranged within or on the chuck.

[0039] Preferably, the step of selecting a temperature measurement means as the reference temperature measurement means comprises the step of selecting the temperature measurement means which has the smallest spatial distance from the test means.

[0040] Preferably, the temperature of the chuck, and also the temperature of the sensor module and / or the wafer, is controlled or regulated based on the measured temperatures of the individual temperature measuring means of the plurality of temperature measuring means. Preferably, the measured temperature of the temperature measuring means or the temperature measuring means that is the smallest spatial distance from the testing means or that is closest to the current location of the testing means is used. Thus, advantageously, the temperature measuring means that potentially detects or records the temperature changes in the area of ​​the wafer where the structure to be tested is most accurately and / or first in time is selected as the reference temperature measuring means for controlling or regulating the temperature of the chuck and / or the associated sensor module and / or the wafer.

[0041] Preferably, if the determined spatial distances of two or more temperature measuring means are within a certain tolerance T± and / or are substantially the same size, the step of selecting the reference temperature measuring means comprises a step of selecting, among the two or more temperature measuring means, the temperature measuring means having the maximum amount of temperature difference Tdiff and / or temperature change per time Tgrad, or a step of selecting two or more temperature measuring means as the reference temperature measuring means, wherein the control or regulation of the temperature of the chuck is based on the arithmetic mean or average of the temperatures measured by the reference temperature measuring means. Here, the tolerance T± may correspond, for example, to an equivalent of preferably less than about 10 cm, more preferably less than about 1 cm, more preferably less than about 0.1 cm. The substantially same size preferably corresponds, for example, to a difference in distance of less than about 10%, more preferably less than about 1%, more preferably less than about 0.1%. The value may be selected according to the structural conditions, in particular the number and / or arrangement of the multiple temperature measuring means, and / or the desired behavior of the temperature control or regulation. Alternatively, two or more temperature measurement means may be selected as reference temperature measurement means, and the temperatures measured by the two or more reference temperature measurement means, e.g., preferably an average of the measured temperatures, may be used to adjust or control the temperature of the chuck.

[0042] Here, the temperature difference Tdiff is the measured temperature T(t) and The amount of difference between the chuck or wafer target temperature Tsoll: Tdiff = |T(t)-Tsoll| or The amount of difference from a previously measured temperature T(tx) of the same temperature measurement means: Tdiff = |T(t)-T(tx)| or The amount of difference between the average temperature Tavg of multiple temperature measurement means: Tdiff=|T(t)-Tavg|=|T(t)-(T1+T2+T3+···+TX) / X| Corresponds to.

[0043] Preferably, the temperature change per hour Tgrad is compared within a certain period t1: Tgrad = |(T(x)-T(x+t1)) / t1|.

[0044] In this manner, the temperature measurement means that detects the maximum temperature decrease or increase within a period t1 can be preferably selected as the reference temperature measurement means, the period t1 being preferably less than about 5 seconds, more preferably less than about 1 second.

[0045] Particularly preferably, the spatial distance between the test means and the temperature measuring means is determined on the basis of vector coordinates. Here, it is preferred to project the positions of the test means and the temperature measuring means into a coordinate system and calculate the connection vector and also its quantity (length) in order to determine the respective distance between the test means and the temperature measuring means. To determine the distance, 2D and / or 3D coordinates of the test means and the temperature measuring means can be used, the 2D coordinates of the test means and / or the temperature measuring means preferably relating to a plane parallel to the wafer surface. An exemplary preferred determination of the distance on the basis of vector coordinates is explained in more detail in the detailed description of the drawings.

[0046] A further aspect relates to a temperature control device for controlling the temperature of a chuck and / or a sensor module and / or a wafer positioned or clamped by a modular wafer chuck system, comprising: a first communication interface suitable for transmitting electrical signals for communicating with the sensor module and / or chuck; and a control unit connected to the first communication interface for receiving electrical signals from a plurality of temperature measurement means for measuring the temperature of the chuck and / or the sensor module and / or the wafer, selecting one of the temperature measurement means as a reference temperature measurement means, and controlling or adjusting the temperature of the chuck based on the temperature of the chuck and / or the sensor module and / or the wafer measured by the selected reference temperature measurement means.

[0047] Preferably, the temperature control device is further adapted to select as the reference temperature measurement means the temperature measurement means having the smallest spatial distance from the testing means for testing the wafer.

[0048] Further preferably, the control unit of the temperature control device is adapted to select the temperature measuring means having the greatest amount of temperature difference Tdiff and / or temperature change per time Tgrad as the reference temperature measuring means if the determined spatial distances of two or more temperature measuring means are within a certain tolerance T± and / or are substantially the same size.

[0049] Particularly preferably, the temperature control device comprises: a second communication interface for supplying and / or discharging a temperature control medium into and out of the chuck for controlling the temperature of the chuck; and / or a third communication interface for communicating with at least one electrical-thermal converter for controlling the temperature of the chuck; It further comprises:

[0050] A further aspect relates to a modular wafer chuck system for testing a wafer comprising a chuck, a sensor module coupled to the chuck for providing or clamping and temperature controlling a wafer, the sensor module comprising a plurality of temperature measuring means for measuring the temperature of the chuck and / or the sensor module and / or the mounted or clamped wafer, at least one testing means for testing the wafer, position detection means for detecting the position of the testing means relative to the wafer chuck system and / or the wafer, and a temperature control device as described in the process.

[0051] Hereinafter, with reference to the drawings, individual embodiments for solving the purpose will be described as examples. Some of the described individual embodiments have features that are not absolutely necessary to carry out the claimed subject matter, but provide desired properties in a particular application. Therefore, an embodiment that does not include all the features of the embodiments described below should also be considered as disclosed as falling under the described technical teachings. Furthermore, in order to avoid unnecessary repetition, certain features are only mentioned in relation to the individual embodiments described below. Therefore, it should be noted that the individual embodiments should be viewed as a whole, not just individually. Based on this summary, a person skilled in the art will recognize that the individual embodiments can be modified by including individual or multiple features of other embodiments. It is pointed out that a systematic combination of the individual embodiments with one or more features described in relation to other embodiments may be desirable and practical, and therefore should be considered and considered to be included in this description. [Brief description of the drawings]

[0052] [Figure 1] FIG. 1 illustrates an exemplary embodiment of a modular wafer chuck system having a wafer mounted on a sensor module, a testing means for testing the wafer, and a temperature controller that allows for temperature control of the chuck by a number of electro-thermal converters. [Diagram 2] FIG. 1 illustrates an alternative exemplary embodiment of a modular wafer chuck system including a chuck, a testing means for testing a wafer, and a temperature control device for controlling the temperature of the chuck by introducing a temperature control medium to the chuck. [Diagram 3] A plan view of a modular wafer chuck system, a mounted wafer having multiple structures to be tested, a testing means for testing the multiple structures to be tested, and multiple temperature measuring means of a sensor module is shown. [Figure 4]1A-1C show exemplary profiles of temperature of the sensor module, the chuck and / or the wafer measured by multiple temperature measuring means of the sensor module. [Diagram 5] FIG. 1 illustrates an alternative exemplary embodiment of a modular wafer chuck system including two separate temperature control circuits for different temperature control mediums. [Figure 6] FIG. 1 illustrates a further exemplary embodiment of a modular wafer chuck system. [Figure 7] FIG. 1 illustrates an exemplary embodiment of a sensor module for a modular wafer chuck system. [Figure 8] FIG. 1 illustrates an exemplary arrangement of temperature measurement means in a sensor module for a modular wafer chuck system. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0053] 1 shows a cross-sectional view of a modular wafer chuck system 40 according to an exemplary and particularly preferred embodiment. The illustrated modular wafer chuck system 40 comprises a chuck 1 or holding or clamping device and a sensor module 42 removably coupled thereto for mounting or clamping a wafer 2. The wafer 2 is preferably mounted parallel to a substantially flat surface of the chuck 1 and / or the sensor module 42 by an applied magnetic field. Alternatively, the chuck 1 and / or the sensor module 42 may have a number of suction grooves (not shown) through which the wafer may be sucked by negative pressure and thus clamped or positioned by the modular wafer chuck system 40.

[0054] As a result of the suction, the wafer 2 is pressed against or arranged on the sensor module 42, thereby ensuring good heat transfer between the sensor module 42 and the wafer 2. The same applies to the coupling of the sensor module 42 to the chuck 1.

[0055] The chuck 1 and / or the sensor module 42 preferably comprise a ceramic body comprising, for example, aluminum oxide or aluminum nitride, and more preferably comprise a conductive shielding layer on a surface of the chuck 1 and / or a surface of the sensor module 42 facing the wafer 2. The wafer 2 is preferably in substantial surface contact with the shielding layer of the sensor module 42.

[0056] The wafer 2 preferably further has a wafer surface 3 including one or more structures 4 to be tested. The structures 4 to be tested are, for example, integrated circuits or electrical components (diodes, transistors, etc.). Here, the wafer 2 may have different numbers and / or arrangements of structures 4 to be tested depending on the size of the wafer surface 3 and the structures 4 to be tested.

[0057] In this connection, reference is made to particularly preferred embodiments of the chuck as described in patent specifications DE 10 2005 014 513 A2 and DE Utility Model 20 2005 014 918 A2, the contents of which are incorporated into the present disclosure by reference.

[0058] The illustrated preferred embodiment of the modular wafer chuck system 40 further comprises at least one testing means 22 capable of testing the structure 4 of the wafer 2 to be tested. Particularly preferably, a suitable testing means 22 has one or more probe needles 23, each of which contacts a contact point of the structure 4 to be tested. Properties of the structure 4 can thus be inspected or tested, for example, by introducing a current or applying a voltage and / or measuring the voltage / current by means of the probe needles 23. Control of the testing means 22, in particular the positioning of the testing means 22 relative to the wafer 2 or the structure 4, is performed, for example, by a (preferably separate) control device.

[0059] In a preferred embodiment of the illustrated modular wafer chuck system 40, the testing means 22 moves over the wafer 2 according to the position of the structure 4 to be tested and is aligned on the wafer surface 3. Also preferably, position detection means 28 are provided for detecting and / or verifying the position of the testing means 22. Preferably, such position detection means 28 receives the position of the testing means 22 from, for example, an actuation or positioning device for moving the testing means 22.

[0060] Alternatively and / or additionally, the position detection means 28 may detect the position of the testing means 22 by means of a sensor (e.g. an infrared sensor, a resistive sensor and / or a magnetic sensor). The position of the testing means 22 is detected or determined by means of the position detection means 28, preferably with respect to a reference element / point of the wafer 2 and / or the chuck 1 and / or the sensor module 42 (e.g. the wafer surface 3, the structure 4 on the wafer, the temperature detection means 6 of the chuck 1 and / or the sensor module 42).

[0061] As an alternative to the test means 22 described in the process, a test means 22 suitable for testing a wafer 2 may comprise a so-called probe card 24, such a probe card 24 preferably comprising a circuit board 25 having a plurality of contact elements 26 capable of contacting contact points of a plurality of structures 4 to be tested. The use of such a probe card 24 has the particular advantage that a plurality of structures 4 can be instantly tested substantially simultaneously or one after the other without realigning the test means 22. Figure 2 shows a further exemplary and preferred embodiment of a modular wafer chuck system 40 having such a probe card 24 as test means 22 for testing structures 4 on a wafer 2.

[0062] In the illustrated preferred embodiment, the sensor module 42 of the modular wafer chuck system 40 includes a plurality of temperature measurement means 6 (e.g., temperature sensors: PT100, PT500, PT1000, NTC, PTC, etc.) suitable for measuring the temperature of the wafer 2 and / or the temperature of the sensor module 42 and / or the chuck 1 in a range close to or substantially adjacent to the wafer 2.

[0063] In the illustrated embodiment, a plurality of temperature measuring means 6 (preferably five) are provided adjacent to one another at substantially regular intervals in a plane substantially parallel to the wafer surface 3. Preferably, the temperature measuring means 6 are arranged in the sensor module 42 close to the surface of the sensor module 42 on which the wafer 2 is clamped / mounted, so that the temperature of the wafer 2 can be advantageously transmitted to the sensor module 42. The chuck 1 of the modular wafer chuck system 40 according to the illustrated exemplary embodiment preferably comprises one or more electrothermal converters 9 (e.g. electric heating elements and / or Peltier elements) in order to be able to control the temperature of the chuck 1 and subsequently the temperature of the associated sensor module 42 and / or the wafer 2. Preferably, the chuck 1 comprises more than five, more preferably more than ten, electrothermal converters 9 arranged in a substantially uniform distribution in the chuck 1, so that the temperature of the chuck 1 can be advantageously controlled, in particular cooled and / or heated. The chuck 1 of the modular wafer chuck system 40 preferably comprises one or more temperature measuring means 6 in order to be able to measure the temperature applied to the chuck 1.

[0064] As an alternative to the exemplary embodiment of the chuck 1 described in the process, other means or mechanisms for temperature control or regulation of the chuck 1 may be mounted. A further preferred embodiment of the chuck 1 for the modular wafer chuck system 40 has a line 8 suitable for the flow of a temperature control medium 18, in particular temperature-controlled air and / or a temperature-controlled liquid. Preferably, the medium line 8 of the chuck 1 is designed such that preferably a large part of the chuck 1 can be substantially uniformly temperature-controlled by the temperature-controlled medium 18 flowing through the medium line 8. Particularly preferably, the medium line 8 has a substantially serpentine-shaped course at least partially inside the chuck 1. FIG. 2 is a further exemplary and preferred embodiment of the modular wafer chuck system 40 with a chuck 1, the temperature of which can be controlled or regulated by the temperature-controlled medium 18.

[0065] The exemplary and preferred embodiment of the modular wafer chuck system 40 shown in FIG. 1 preferably further comprises a temperature control device 10 for controlling or regulating the temperature control of the chuck 1 and / or the sensor module 42 and / or the wafer 2. Preferably, the temperature control device 10 comprises means for communicating with the sensor module 42 and / or the chuck 1 of the modular wafer chuck system 40, for example in the form of one or more communication interfaces 12 by which the temperature control device 10 can be connected to the chuck 1. Particularly preferably, the temperature control device 10 has at least one first communication interface 12a which is particularly suitable for transmitting electrical signals, in particular electrical signals from one or more temperature measuring means 6 of the sensor module 42, to the temperature control device 10. Further preferably, the temperature control device 10 according to the exemplary and preferred embodiment has at least one further communication interface 12c which in particular enables communication with one or more electrothermal converters 9 of the chuck 1, in particular the control of the electrothermal converters 9.

[0066] The illustrated exemplary temperature control device 10 preferably further comprises a control unit 14 (e.g., a (micro)controller, FPGA, etc.) connected to one or more communication interfaces 12 and able to communicate with the sensor module 42 and / or the chuck 1 via these interfaces. In particular, the control unit 14 is suitable for receiving, processing and / or evaluating signals from the temperature measuring means / temperature sensors 6 of the sensor module 42 and / or the chuck 1. Furthermore, the exemplary and preferred embodiment of the control unit 14 of FIG. 1 is suitable for influencing or controlling / regulating the temperature of the chuck 1 and / or the sensor module 42 and / or the wafer 2. In particular, the control unit 14 is suitable for controlling the electrothermal converter 9 of the chuck 1 in order to increase, decrease and / or keep the temperature of the chuck 1 substantially constant. Further preferably, the control unit 14 is designed to obtain the position of the testing means 22 from the position detection means 28. Alternatively and / or additionally, the control unit 14 is preferably suitable for controlling or regulating the supply and / or discharge of the temperature control medium 18 for temperature control of the chuck 1 and / or the temperature of the temperature control medium 18, as will be explained in more detail with reference to FIG.

[0067] Furthermore, a particularly preferred embodiment of the control unit 14 shown in FIG. 1 is a method for controlling or regulating the temperature of the chuck 1 and / or a removably coupled sensor module 42 and / or a wafer 2 mounted or clamped by the chuck 1, the method comprising: determining the respective spatial distances between the test means 22 and a plurality of temperature measuring means 6 for measuring the temperature of the sensor module 42 and / or the chuck 1 or the wafer 2 clamped by the modular wafer chuck system 40; The present invention enables a method to be carried out, including

[0068] The control unit 14 in the illustrated preferred embodiment is capable of determining the respective spatial distances between the testing means 22 and the plurality of temperature measuring means 6 of the modular wafer chuck system 40 .

[0069] An exemplary and preferred method suitable for this step comprises a step of defining the position of the testing means 22 and the plurality of temperature measuring means 6 in a (preferably Cartesian) coordinate system. The position of the testing means 22 is preferably approximated to a point or a substantially point-like infinitesimal area, more preferably in a plane substantially parallel to the wafer surface 3. Particularly preferably, this point substantially corresponds to the geometrical center of gravity of the testing means 22 or the geometrical center of gravity of its projection onto the plane defined by the temperature measuring means 6 of the modular wafer chuck system 40.

[0070] More preferably, the reference point is determined as a coordinate origin or pole / zero point of a two-dimensional coordinate system, preferably located in the plane of the plurality of temperature measuring means 6. Further preferably, the positions of the individual temperature measuring means 6 and the testing means 22 are approximated to a substantially point-like, infinitesimal area (preferably corresponding to the geometric centroid) and assigned to coordinates in the coordinate system. Furthermore, the control unit 14 determines the distance of the individual temperature measuring means 6 from the testing means 22, preferably by calculating the length (quantity) of the connection vector between the respective coordinates of the testing means 22 and the temperature measuring means 6.

[0071] The methods described in the process for determining the spatial distance between the testing means 22 and the respective temperature measuring means 6 represent exemplary and preferred embodiments only. For example, the position of the testing means 22 or the temperature measuring means 6 can also be assigned to coordinates in a three-dimensional coordinate system (without projection onto a specific plane, see FIG. 2). Also, any alternative method for determining the distance of the testing means 22 from the temperature measuring means 6 may be used.

[0072] Further, an exemplary and preferred method for temperature control or regulation of the chuck 1, the sensor module 42 removably coupled to the chuck 1, and / or the wafer 2 clamped by the modular wafer chuck system 40 includes: A step of selecting a temperature measuring means 6 from among the plurality of temperature measuring means 6 as a reference temperature measuring means. Preferably, the temperature measuring means 6 with the smallest spatial distance from the testing means 22 is selected.

[0073] For this purpose, the control unit 14 preferably compares the determined spatial distances Ai of the individual temperature measuring means 6 from the test means 22 and selects the temperature measuring means 6 with the smallest distance Ai as the reference temperature measuring means. Particularly preferably, if two or more temperature measuring means 6 have substantially the same distances with a difference of less than a certain tolerance T± (preferably less than about 1 cm, more preferably less than about 0.1 cm), the (further) selection of the relevant temperature measuring means 6 is performed by selecting the temperature measuring means 6 with the largest amount of temperature difference Tdiff and / or temperature change per time Tgrad among the two or more temperature measuring means 6 (whose determined spatial distances from the test means 22 are within a certain tolerance T± and / or are substantially the same).

[0074] Alternatively, two or more temperature measurement means 6 may be selected as reference temperature measurement means, and, for example, an average value of the temperatures measured by the reference temperature measurement means may be used as a reference temperature for controlling the temperature of the modular wafer chuck system 40.

[0075] In the case where two or more temperature measuring means 6 are at substantially the same distance from the testing means 22 as described in the process, the temperatures or temperature profiles measured by the temperature measuring means 6 which are related, i.e. have substantially the same distance from the testing means, are further preferably compared.

[0076] Here, the individual temperature difference Tdiff of the temperature measuring means 6 is the temperature T(t) measured by the temperature measuring means 6 at time t, and The amount of difference between the chuck or wafer target temperature Tsoll, Tdiff = |T(t)-Tsoll| or The amount of difference from a previously measured temperature T(tx) of the same temperature measuring means 6: Tdiff = |T(t)-T(tx)| (This temperature difference based selection process is shown as an example in Figures 3 and 4.) or The amount of difference from the average temperature Tavg of a plurality of X temperature measuring means 6 (preferably all temperature measuring means 6 of the chuck 1): Tdiff=|T(t)-Tavg|=|T(t)-(T1+T2+T3+···+TX) / X| It is.

[0077] The temperature change per hour Tgrad within a particular period t1 preferably corresponds to the amount of change in temperature measured by the temperature measuring means 6 over a certain duration or period t1: Tgrad = |T(x)-T(x+t1)|

[0078] As a result, the temperature measurement means 6 which detects the greatest temperature loss or greatest temperature increase within the time period t1 may then be selected as the reference temperature measurement means. The time period t1 over which the temperature profile is determined is preferably less than about 5 seconds, more preferably less than about 1 second, more preferably less than about 0.1 seconds.

[0079] The parameters described in the process of (further) selecting one temperature measurement means 6 from the relevant temperature measurement means 6 can be used for the step of selecting the reference temperature measurement means, both alone and in any combination, possibly with different weightings. The same applies to the determined distances of the relevant temperature measurement means. Also further alternative parameters may be used for selecting the reference temperature measurement means.

[0080] Further, an exemplary and preferred method for controlling or regulating the temperature of the chuck 1 or the wafer 2 clamped by the chuck 1 includes controlling or regulating the temperature of the chuck 1 based on the temperature of the chuck 1 or the wafer 2 measured by a selected reference temperature measurement means.

[0081] Preferably, the temperature of the entire chuck 1, i.e. preferably all means for temperature control of the chuck 1 (e.g., electrothermal converter, temperature control medium / medium lines) are controlled to be substantially uniform / identical so that the temperature of the chuck 1 is controlled substantially uniformly.

[0082] Preferably, only the measured temperature of the selected reference temperature measuring means is used to control or regulate the temperature of the chuck 1. Preferably, the temperature measured by the reference temperature measuring means is compared with a specified target temperature of the chuck 1 and / or the sensor module 42 and / or the wafer 2 and is substantially adapted to the target temperature of the chuck 1 and / or the sensor module 42 and / or the wafer 2, for example by correspondingly controlling the temperature control means (e.g. the electrothermal converter 9) (see also FIG. 4). As a result, different areas of the chuck 1 and / or the sensor module 42 can be at different temperatures, which influences the temperature of the wafer 2.

[0083] FIG. 2 shows a cross-sectional view of a modular wafer chuck system 40 according to a further exemplary and particularly preferred embodiment (similar to the embodiment of FIG. 1). The illustrated modular wafer chuck system 40 comprises a chuck 1, which preferably clamps the wafer 2 by application of a magnetic field or negative pressure, and a sensor module 42. The sensor module 42, like the sensor module 42 of FIG. 1, preferably has a number of temperature measuring means 6 (e.g. PT100, PT500, PT1000, NTC, PTC) for measuring the temperature of the chuck 1 and / or the sensor module 42 and / or the wafer 2, which are connected to the control unit 14 via the first communication interface 12a. The modular wafer chuck system 40, like the system of FIG. 1, is suitable for carrying out the method described in the process for controlling the temperature of the chuck 1 and / or the sensor module 42 and / or the wafer 2. The chuck 1 of the modular wafer chuck system 40 preferably has one or more temperature measuring means 6.

[0084] However, as an alternative to the modular wafer chuck system 40 shown in Fig. 1, in the system shown in Fig. 2 a so-called probe card 24 is provided as testing means 22 for testing the wafer 2 or structures 4 on the wafer 2. Such a probe card 24 preferably comprises a circuit board 25 with a number of contact elements 26, which are arranged in such a way that they can contact contact points of several structures 4 to be tested on the wafer 2. Thus, by aligning or positioning the testing means 22 or the probe card 24 once, several structures can advantageously be tested substantially simultaneously and / or successively, which allows accelerating the testing method.

[0085] A different determination of the respective spatial distance between the temperature measuring means 6 and the testing means 22 or the probe card 24 is also shown. In contrast to FIG. 1, the position of the probe card 24 is not projected onto a plane formed by the position of the temperature measuring means 6, but is determined according to an alternative method. This exemplary and preferred method assigns coordinates in a three-dimensional (preferably Cartesian) coordinate system to the testing means 22 (probe card 24) and the temperature measuring means 6 and determines the length or amount of the connection vector in the three-dimensional space. As explained with respect to FIG. 1, the positions of the individual temperature measuring means 6 and the testing means 22 are preferably approximated to a substantially point-like infinitesimal area (preferably corresponding to the respective geometrical correspondence). The distance Ai corresponds to the length (amount) of the connection vector between the coordinates of the temperature measuring means 6 and the testing means 22.

[0086] Also, different from the embodiment shown in FIG. 1, the temperature control or the means for controlling or regulating the temperature of the chuck 1 comprises a temperature control medium 18 and a medium line 8 arranged in the chuck 1 for conducting the temperature control medium 18. For example, the temperature control medium comprises temperature controlled air and / or a temperature controlled liquid and flows through the medium line 8 of the chuck to achieve temperature control (increasing / decreasing / maintaining the temperature of the chuck 1). Preferably, the medium line 8 of the chuck 1 is designed at least partially to have a substantially serpentine shape so that an advantageous temperature control of the chuck 1 can be achieved by the temperature control medium 18. According to the illustrated preferred embodiment, the temperature control device 10 has a corresponding communication interface 12b suitable for example to supply the temperature control medium into the chuck 1 and / or to discharge it out of the chuck 1.

[0087] Preferably, the correspondingly configured control unit 14 is suitable for influencing or adapting the flow parameters, the temperature and / or the composition of the temperature control medium 18, if necessary. Heptane as well as various alcohols such as amyl alcohol (pentanol) and methanol are particularly suitable as temperature control medium. Thermal oils based on silicone oils are more suitable. Temperature control fluids containing perfluorinated polyethers (e.g. available from Solvay Solexis SpA under the trade name Galden HT), poly(oxyperfluoro-n-alkylenes) (e.g. available from Solvay Solexis SpA under the trade name Galden ZT) and / or mixtures of triethoxyalkylsilanes (e.g. available from DWS Synthesetechnik under the trade name DW-Therm) are preferably used. However, other substances known to those skilled in the art can also be used. Further preferably, the chuck 1 may have several (independent) medium lines 8, preferably suitable for temperature control of most of the chuck 1, which further preferably allows for substantially uniform control of the chuck 1, and allows for substantially uniform temperature control of the entire chuck 1 or of all temperature control elements of the chuck.

[0088] FIG. 3 shows a top view of the chuck 1 and / or sensor module 42 according to a preferred embodiment having a mounted or clamped wafer 2 with a substantially circular wafer surface 3. The wafer has a plurality (preferably 1 to about 1000, more preferably about 5 to about 200, more preferably about 10 to about 100, e.g., 14 as shown in FIG. 3) of structures to be tested 4 arranged in a substantially uniform pattern in or on the wafer 2 (wafer surface 3). In the illustrated exemplary embodiment, the sensor module 42 has a plurality (preferably about 3 to about 20, e.g., 5 as shown in FIG. 3) of temperature measuring means 6a, 6b, 6c, 6d, 6e, preferably PT-100 temperature sensors, preferably arranged below the wafer 2. Alternatively and / or additionally, other temperature sensors, such as PT series, PT500, PT1000, HTC and / or NTC, may be provided to measure the temperature of the chuck 1 and / or sensor module 42 and / or wafer 2.

[0089] The temperature measuring means 6a-6e are preferably arranged according to a pattern as shown, and more preferably are substantially uniformly distributed across the wafer surface 3. Figure 3 also shows a testing means 22 having a plurality (preferably four) probe needles 23 (not identified), which are suitable for contacting a contact surface of the structure 4 to be tested in order to test the structure 4 to be tested.

[0090] In the state of the test means 22 shown in Fig. 3, it is substantially positioned above one of the structures 4 to be tested, and its probe needle 23 is in contact with the contact surface of the structure 4, respectively. In this state, the test means 22 has a position (preferably approximated, substantially point-like, and substantially corresponding to the geometric center of gravity) at which the distance from the positions (preferably approximated, substantially point-like, and substantially corresponding to the geometric center of gravity) of the temperature measuring means 6a, 6b, and 6c is approximately the same (or the distance between the test means 22 and one of the temperature measuring means A6a, A6b, or A6c, respectively, has a difference within a specified tolerance T±). In such a case, when using the method described in the process of temperature control or adjustment of the chuck 1 and / or the modular wafer chuck system 40, it is preferable to select a reference temperature measuring means from among the temperature measuring means 6a, 6b, and 6c, taking into account the temperature difference Tdiff and / or temperature gradient Tgrad of the temperature measuring means 6a, 6b, and 6c.

[0091] FIG. 4 shows an exemplary temperature profile of the arrangement shown in FIG. 3 and described in the process. Shown here are the profiles of temperatures T6a, T6b, T6c, T6d and T6e measured by the temperature measuring means 6a-6e. As described in the process, among the temperature measuring means 6a, 6b and 6c, a reference temperature measuring means is selected based on which the temperature of the chuck 1 and / or the sensor module 42 and / or the wafer 2 is regulated or controlled. For this purpose, in the present preferred example, the temperature difference Tdiff of the temperature measuring means 6a-6c measured at time t is compared with the temperature of the respective temperature measuring means 6a-6c measured at time tx (i.e., duration x before time t). Tdiff6a = |T6a(t) - T6a(tx)| Tdiff6b = |T6b(t) - T6b(tx)| Tdiff6c = |T6c(t) - T6c(tx)|

[0092] In FIG. 3, the temperature difference Tdiff6a of the temperature measuring means 6a is shown as an example or representative, this exemplary scenario also corresponding to the maximum temperature difference of the temperature measuring means 6a-6c.

[0093] The temperature differences Tdiff6a, Tdiff6b, and Tdiff6c are compared to one another to determine the highest value of the temperature difference. In an exemplary method, the temperature measurement means 6 associated with the highest value of the temperature difference is selected as the reference temperature measurement means. As a result, in the present exemplary and preferred method, the temperature measurement means 6a is selected as the reference temperature measurement means and used to control the temperature of the chuck 1 and / or the sensor module 42 and / or the wafer 2.

[0094] More preferably, the temperature control (control or regulation of temperature) is performed by substantially adjusting the temperature measured by the temperature measuring means 6a. As can be seen in Fig. 4, the temperature control affects each of the plurality of temperature measuring means 6 and thus preferably substantially all or at least most of the area of ​​the sensor module 42 and / or the chuck 1. In this example, the temperature measuring means 6b-6e measure values ​​that are (clearly) below the target temperature of the wafer 1 and / or the sensor module 42 and / or the chuck 1.

[0095] The method described with respect to Fig. 3 and Fig. 4 is only an exemplary and preferred embodiment of a method for temperature control of the chuck and / or the sensor module and / or the wafer. In particular, the parameters used for selecting the reference temperature measurement means may be changed according to requirements and / or desires. Here, for example, the temperature gradient of the temperature measurement means may be selected or used as a decision parameter. The measured temperatures of two or more temperature measurement means 6 may also be used as reference values ​​for the temperature control, for example, by averaging the measured temperatures. The method of temperature control may also be performed in an alternative manner, for example, by substantially halving the difference between the temperature of the reference temperature measurement means and the target temperature of the chuck 1 and / or the sensor module 42 and / or the wafer 2.

[0096] FIG. 5 shows a further preferred embodiment of a chuck 1 for a modular wafer chuck system 40, in which the temperature control of the chuck 1 is made possible by preferably different temperature control media 18a, 18b in a first temperature control circuit 30 and a second temperature control circuit 32. More preferably, the two temperature control circuits 30, 32 each have a medium line 8a, 8b that extends substantially serpentinely at least in certain regions. In this exemplary and preferred embodiment, advantageous temperature control of the chuck 1 is made possible, since preferably different temperature control media 18 can be used for temperature control in different temperature ranges. For example, the first temperature control medium 18a is used for a first temperature range, for example from about -75°C to about 100°C, and the second temperature control medium 18b is used for a second temperature range, for example from about 50°C to about 400°C. Heptane as well as various alcohols such as amyl alcohol (pentanol) and methanol are particularly suitable as temperature control media 18. Thermal oils based on silicone oil are more suitably used. Temperature control fluids containing perfluorinated polyethers (e.g. available from Solvay Solexis SpA under the trade name Galden HT), poly(oxyperfluoro-n-alkylenes) (e.g. available from Solvay Solexis SpA under the trade name Galden ZT) and / or mixtures of triethoxyalkylsilanes (e.g. available from DWS Synthesetechnik under the trade name DW-Therm) are preferably used. However, other materials known to those skilled in the art can also be used.

[0097] 5 preferably comprises one or more electrothermal converters 9 to allow for further advantageous temperature control of the chuck 1 and / or the sensor module 42. The electrothermal converters 9 are preferably particularly suitable for a temperature control that can be adjusted accurately and quickly in a relatively low temperature range of about +-50° C. The chuck 1 may comprise one or more temperature measuring means 6 that can be connected to a temperature control device 10.

[0098] In this connection, reference is made to a preferred embodiment of a chuck particularly suitable for this purpose, which is described in patent specification DE 10 2005 049 598 D, the content of which is incorporated into the present disclosure by reference.

[0099] 6 shows a further preferred embodiment of a modular wafer chuck system 40 having a chuck 1 and a sensor module 42 coupled to the chuck 1. The illustrated example of the modular wafer chuck system 40 further comprises at least one optional replaceable insulating layer 46 arranged between the chuck 1 and the sensor module 42. The insulating layer 46 is particularly advantageous in high voltage and / or low noise applications to electrically insulate the chuck 1 from the sensor module 42 and / or the wafer 2. According to an alternative embodiment, the modular wafer chuck system 40 does not include the insulating layer 46 or does not include the insulating layer 46 between the sensor module 42 and the wafer 2.

[0100] The sensor module 42 is detachably and / or exchangeably coupled to the chuck 1. This is done, for example, by one or more vacuum chambers 44 connected via a connection device 50 to a vacuum line 52, via which a vacuum pump 54 can apply a vacuum and / or negative pressure to the vacuum chambers 44. As a result, the sensor module 42 is sucked and / or coupled to the chuck 1. Alternatively and / or additionally, the sensor module 42 may be coupled to the chuck 1 by applying a magnetic field. A mechanical coupling, for example by one or more clamps, is also possible.

[0101] The coupling of the sensor module 42 to the chuck 1 is preferably such that substantially only the second coupling surface 42a of the sensor module 42 rests on and / or abuts the coupling surface 1a of the chuck 1. As a result, advantageously and preferably only a coupling for temperature control and / or transfer of heat and / or cold between the chuck 1 and the sensor module 42 is present. In particular, the chuck 1 and the sensor module 42 represent a self-contained unit, such that the chuck 1 is configured for coupling and temperature control also individually of a wafer, without a coupled sensor module, and the sensor module is configured for coupling to a (different) chuck and / or a wafer and for measuring the temperature of the wafer.

[0102] At least one optional insulating layer 46, if present, is preferably designed to have openings and / or recesses in the area of ​​one or more vacuum chambers 44 of the chuck 1 so that the vacuum and / or negative pressure in the vacuum chambers 44 can suck the sensor module 42 to the chuck 1. The insulating layer 46 preferably comprises a material having a high resistivity, such as aluminum oxide ceramic, steatite, porcelain, glass, (fiberglass reinforced) plastic, silicone rubber, Teflon, boron nitride and / or epoxy resin. The insulating layer 46 preferably has a high coefficient of thermal conductivity such that the insulating layer 46 has little or no effect on the temperature measurement and / or temperature control of the wafer chuck system 40.

[0103] 2, the exemplary embodiment of the modular wafer chuck system 40 of FIG. 6 has a second communication interface 12b that can achieve temperature control of the chuck 1 by a temperature control medium 18. The chuck 1 further has a media line 8 arranged within the chuck 1 for conducting the temperature control medium 18. The temperature control medium may include, for example, temperature controlled air and / or a temperature controlled liquid or fluid, and may flow through the chuck's media line 8 to achieve temperature control (raise / lower / maintain the temperature of the chuck 1 and / or the sensor module 42 and / or the wafer 2).

[0104] Alternatively and / or additionally, the chuck 1 may have a third communication interface 12c for communicating with one or more electro-thermal converters 9 (e.g. electric heating elements and / or Peltier elements) arranged within the chuck 1, in particular to allow temperature control of the chuck 1 and subsequently the wafer 2. The chuck 1 preferably has more than five, more preferably more than ten, electro-thermal converters 9, preferably arranged substantially uniformly distributed within the chuck 1, so that the chuck 1 can be advantageously temperature controlled, in particular cooled and / or heated.

[0105] The temperature control of the chuck-wafer system 40 may be controlled and / or regulated by the temperature control device 10 and / or the control unit 14. For example, the temperature control may be performed according to the methods described in the process.

[0106] The sensor module 42 may preferably have one or more vias 48, i.e. holes and / or channels, extending from the first bonding surface 42a to the second bonding surface 42b of the sensor module 42. The vias 48 are configured to transfer negative pressure and / or vacuum applied to one or more vacuum chambers 44 of the chuck 1 through the sensor module 42 to the wafer 2 attached to the first bonding surface 42a of the sensor module 42. Alternatively and / or additionally, the sensor module 42 may have one or more vacuum chambers 44 on the first bonding surface 42a and at least one connecting device 50 connected to the one or more vacuum chambers 44. The wafer 2 may be attached or clamped to the first bonding surface 42a of the sensor module 42 by applying negative pressure and / or vacuum to the connecting device 50. Alternatively and / or additionally, the sensor module 42 may be configured to generate a magnetic field that couples the wafer 2 to the bonding surface 42a.

[0107] The illustrated example sensor module 42 also has one or more, e.g., four, temperature measurement means 6 for measuring the temperature of the sensor module 42 and / or the wafer 2 and / or the chuck 1. As described with respect to Figures 1 and 2, such temperature measurement means 6 may comprise, for example, one or more PT100 temperature sensors. Alternatively and / or additionally, one or more NTC or PTC resistors or other suitable sensors may be used to measure the temperature.

[0108] According to a particularly preferred embodiment, the sensor module 42 has one or more recesses, in particular one or more channels and / or grooves and / or holes, in which the circuit board 56 with one or more temperature sensors (temperature measuring means 6) can be at least partially arranged and / or set. Advantageously, the sensor module 42 has one or more recesses on the second mating surface 42b, i.e. the mating surface of the sensor module 42 facing the chuck 1. This allows for a simple mounting or integration of one or more temperature measuring means 6 in and / or on the sensor module 42. Alternatively and / or additionally, the sensor module 42 may consist of two or more individual parts between which one or more temperature measuring means 6 are arranged. This is particularly advantageous, since both mating surfaces 42a, 42b thus have a substantially closed surface that protects the one or more temperature measuring means 6 from external influences.

[0109] The sensor module 42 preferably comprises one or more printed circuit boards 56 or circuit boards or PCBs, on which the one or more temperature measuring means 6 are mounted. This allows, on the one hand, a simple mounting of the temperature measuring means 6 to or within the sensor module 42, and, on the other hand, the possibility of using temperature sensors (temperature measuring means 6) in SMD (Surface Mounted Device) format. As a result, the manufacture of the sensor module 42 and / or the wafer chuck system 40 can be simplified.

[0110] The layout of the circuit board(s) 56 and / or the arrangement of the temperature measurement means(s) may vary depending on requirements. A particularly preferred arrangement is shown in FIG.

[0111] The chuck 1 may have one or more temperature measuring means 6, which may preferably also be used for temperature regulation or control. In particular, an electrical signal may be provided from the one or more temperature measuring means 6 of the chuck 1 to the temperature measurement unit 43 and / or the temperature control device 10 and / or the control unit 14.

[0112] The material from which the sensor module 42 and / or the chuck 1 are made preferably comprises one or more of aluminum, aluminum alloys, copper, copper alloys, ceramics such as SiC, SiSiC, AlN, Si3N4, Al2O3 or cordierite, and / or glasses and glass ceramics such as borosilicate glass or quartz glass. The sensor module 42 and / or the chuck 1 advantageously have a coating comprising gold and / or nickel. In this way, in particular a reduction in contact resistance, an increase in thermal conductivity or temperature coupling, and / or an increase in dimensional stability can be achieved.

[0113] Additionally, one or more structures such as knobs may be attached to the bonding surface of chuck 1 and / or the first and / or second bonding surfaces of sensor module 42 to reduce and / or define and / or increase, as desired, the contact area between chuck 1 and sensor module 42 or between sensor module 42 and wafer 2.

[0114] Preferably, the chuck 1 and / or the sensor module 42 and / or their bonding surfaces have a diameter of about 100 mm to about 305 mm, preferably about 150 mm to about 205 mm. The sensor module 42 preferably has a height of about 5 mm to about 30 mm, preferably about 7 mm to about 13 mm. However, the chuck 1 and / or the sensor module 42 and / or their bonding surfaces can also take any shape (deviation from circular) depending on the shape and / or dimensions of the wafer to be mounted. In special applications, for example, substantially rectangular / square chucks can be used.

[0115] 7 shows an exemplary embodiment of a sensor module 42 for a modular wafer chuck system 40 having a different vacuum structure or pattern, i.e., a configuration and / or arrangement of one or more vacuum chambers 44, in particular recesses and / or holes and / or grooves and / or notches in the first mating surface 42a of the sensor module 42. For secure mounting or clamping of the wafer, a substantially uniform distribution of the vacuum chambers 44 across the first mating surface 42a of the sensor module 42 is particularly advantageous to ensure secure holding of the wafer without concentrated or band-like overloading of the wafer 2. Alternatively and / or additionally, the wafer 2 may be mounted or clamped by an applied magnetic field.

[0116] The sensor module 42 of embodiments A) and B) comprises, for example, a plurality of substantially point-like vacuum chambers 44 on the first bonding surface 42a. The illustrated exemplary embodiments A) and B) also have at least one, for example three, vias 48 that can conduct negative pressure from the chuck 1 through the sensor module 42 to the wafer 2. By providing one or more vias 48, the wafer can be mounted or clamped on the sensor module 42 without the need to connect the sensor module 42 to, for example, a vacuum pump 54 or without the need to generate a magnetic field.

[0117] Embodiment D) also has two vacuum chambers, each in the form of a substantially circular groove and / or notch.

[0118] The sensor modules 42 of the embodiments A), B), C), D), F) and G) present one or more first communication interfaces 12a configured for transmitting electrical signals from at least one temperature measuring means 6 of the respective sensor module 42 to the temperature measuring unit 43. Depending on the number and / or arrangement of the temperature measuring means 6, e.g. corresponding to different sectors, the sensor module 42 can have multiple first communication interfaces 12a. Alternatively and / or additionally, the one or more first communication interfaces 12a have multiple electrical connections, e.g. cable lines.

[0119] The sensor module 42 can have several, for example four, sectors, each of which can be designed substantially identical or different. Advantageously, one wafer 2 in each case can be arranged or mounted or clamped on one sector of the sensor module 42. The embodiment C) comprises a substantially identical vacuum pattern on four symmetrically distributed sectors on the first coupling surface 42a of the sensor module 42. The sensor module 42C) thus comprises four first communication interfaces 12a, one communication interface 12a assigned to a sector and connected to one or more temperature measuring means 6 of the respective sector.

[0120] According to a preferred embodiment, the sensor module 42C) comprises several, for example two, connection devices 50, so that the loading or clamping of the wafer in one or more sectors can be performed independently of one or more other sectors. Alternatively, certain parts or parts of the vacuum structure can be connected to different connection devices 50, so that negative pressure and / or vacuum can be applied only to a part of the vacuum structure.

[0121] Exemplary embodiment E) comprises a single connection device 50 for connection to a vacuum line 52 and a vacuum pattern having a number of substantially linear, orthogonally arranged and intersecting grooves or notches. Embodiment F) comprises a number of substantially concentrically arranged circular grooves or notches and several linear radially extending grooves or notches connecting them.

[0122] The sensor module 42 according to embodiment G) has a plurality of substantially point-like vacuum chambers 44 and does not have vias 48 .

[0123] The exemplary sensor module 42 shown in Fig. 7 may have one or more temperature measuring means 6 (not shown) in different arrangements. Depending on the requirements, in particular the size and / or number of the wafer 2 to be mounted or clamped and / or the layout of the structures to be tested on the wafer 2, arrangements of different complexity may be provided, with different number and / or positioning and / or alignment of the temperature measuring means. Exemplary arrangements are shown in Figs. 3 and 8.

[0124] The embodiments shown in FIGS. 6 and 7 may further have one or more features of the embodiments of FIGS.

[0125] 8 shows an exemplary arrangement of temperature measuring means 6 in or on a sensor module 42 for a modular wafer chuck system 40. In the illustrated example, a plurality of temperature measuring means 6 are mounted on a circuit board 56 and are preferably substantially symmetrically and / or evenly distributed across the first mating surface 42a of the sensor module 42. The sensor module 42 advantageously has one or more recesses in which the circuit board 56 and the temperature measuring means 6 are at least partially installed and / or embedded and / or set.

[0126] The circuit board 56 with the temperature sensors is also advantageous since it simplifies replacement if one or more sensors are defective. Similarly, only the circuit board can be adapted to a modified structure to be tested, without the need to replace the chuck 1 and / or the sensor module 42. Furthermore, the partially and / or fully automated manufacture of the circuit board 56 is cost-saving and time-efficient.

[0127] The present disclosure also relates to the following examples.

[0128] Example 1. A method for temperature control or regulation of a chuck (1) for a wafer (2), comprising the steps of: detecting the position of a testing means (22) for testing the wafer (2); determining respective spatial distances between the test means (22) and the chuck (1) or the sensor module (42) or a plurality of temperature measuring means (6) for measuring the temperature of a wafer (2) mounted or clamped by the chuck (1); selecting at least one temperature measurement means (6) from the plurality of temperature measurement means (6) as a reference temperature measurement means; controlling or adjusting the temperature of the chuck (1) based on the temperature of the chuck (1), or the sensor module (42), or the wafer (2) measured by the selected reference temperature measuring means; A method comprising:

[0129] Example 2. The step of selecting the temperature measuring means (6) as the reference temperature measuring means includes: Selecting the temperature measuring means (6) with the smallest spatial distance from the test means (22). The method of Example 1, comprising:

[0130] Example 3. The step of selecting at least one reference temperature measuring means comprises: if the determined spatial distances of two or more temperature measuring means (6) are within a certain tolerance T± and / or are substantially the same; selecting, from among two or more temperature measuring means (6), the temperature measuring means (6) having the largest amount of temperature difference Tdiff and / or temperature change per time Tgrad; or selecting two or more temperature measuring means (6) as reference temperature measuring means, and controlling or regulating the temperature of the chuck (1) is based on an arithmetic mean or average of the temperatures measured by the reference temperature measuring means; The method as described above, comprising:

[0131] Example 4. The temperature difference Tdiff is the amount of difference between the measured temperature T(t) and the target temperature Tsoll of the chuck (1) or wafer (2), or the amount of difference between the measured temperature T(t) and a previously measured temperature T(tx) of the same temperature measuring means, or The method according to embodiment 3, wherein the difference between the measured temperature T(t) and the average temperature Tavg of the plurality of temperature measuring means (6) is an amount of difference.

[0132] Example 5. The method according to example 3, wherein the temperature change per time Tgrad is compared within a certain time period t1.

[0133] Example 6. The method as described above, wherein the spatial distance between the testing means (22) and the temperature measuring means (6) is determined based on vector coordinates.

[0134] Example 7. A temperature control device (10) for controlling the temperature of a chuck (1) and / or a wafer (2) mounted or clamped by the chuck (1), comprising: a first communication interface (12a) for communicating with the chuck (1), the first communication interface (12a) being adapted to transmit an electrical signal; Connected to the first communication interface (12a), receiving electrical signals from a plurality of temperature measuring means (6) for measuring the temperature of the chuck (1), the sensor module (42), or the wafer (2); Selecting at least one of the temperature measurement means (6) as a reference temperature measurement means; Controlling or adjusting the temperature of the chuck (1) based on the temperature of the chuck (1) or the sensor module (42) or the wafer (2) measured by a selected reference temperature measuring means. A control unit (14) for A temperature control device (10).

[0135] Example 8. The temperature control device according to embodiment 7, wherein the control unit (14) is adapted to select the temperature measurement means (6) that is the shortest spatial distance from the testing means (22) for testing the wafer (2) as the reference temperature measurement means.

[0136] Example 9. The temperature control device (10) according to Example 7 or 8, wherein the control unit (14) is adapted to select the temperature measurement means (6) having the greatest amount of temperature difference Tdiff and / or temperature change per time Tgrad as the reference temperature measurement means when the determined spatial distances of two or more temperature measurement means (6) are within a certain tolerance T± and / or are substantially the same magnitude.

[0137] Example 10. a second communication interface (12b) for supplying and / or discharging a temperature control medium (18) into and / or out of the chuck (1) for controlling the temperature of the chuck (1); and / or a third communication interface (12c) for communicating with at least one electrothermal converter (9) for controlling the temperature of the chuck (1); The temperature control device (10) according to any one of Examples 7 to 9, further comprising:

[0138] Example 11. A wafer testing system (20) for testing a wafer, comprising: A chuck (1) for mounting or clamping and temperature controlling a wafer (2), the chuck (1) comprising a plurality of temperature measuring means (6) for measuring the temperature of the chuck (1) or the wafer (2) mounted or clamped by the chuck (1) or a sensor module (42); at least one testing means (22) for testing the wafer (2); a position detection means (24) for detecting the position of the testing means (22) relative to the chuck (1), the sensor module (42), or the wafer (2); A temperature control device (10) according to any one of Examples 7 to 10; A wafer testing system (20). [Explanation of symbols]

[0139] 1 Chuck 2 Wafer 3. Wafer surface 4 Structure to be tested 6 Temperature measuring device 8 Media Line 9 Electrical-thermal converter 10 Temperature control device 12 Communication Interface 14 Control unit 18 Temperature Control Medium 20 Wafer Test System 22 Testing methods 23 Probe needle 24 Probe Card 25 Circuit Board 26 Contact Elements 28 Position detection means 30 First temperature control circuit 32 Second temperature control circuit 40 Wafer chuck system 42 Sensor Module 43 Temperature measuring unit 44 Vacuum Chamber 46 Insulating Layer 48 Via 50 Connection Device 52 Vacuum Line 54 Vacuum Pump 56 Circuit Board

Claims

1. A modular wafer chuck system (40) for mounting or clamping and temperature control of a wafer (2), comprising: A chuck (1) for controlling the temperature of a wafer (2); a sensor module (42) comprising at least one temperature measuring means (6) for measuring a temperature of said sensor module (42) and / or said chuck (1) and / or a wafer (2) mounted or clamped by said wafer chucking system; The chuck (1) has a coupling surface (1 a) configured to detachably couple the sensor module (40); and the sensor module (42) having a first mating surface (42a) configured to mount or clamp a wafer (2) and a second mating surface (42b) for mating with the mating surface (1a) of the chuck (1); the sensor module (42) is not configured to control the temperature of the sensor module (42) and / or the mounted or clamped wafer (2); A modular wafer chuck system (40).

2. the chuck (1) and / or the sensor module (42) are self-contained units and can be used individually and / or independently of each other; The modular wafer chuck system (40) of claim 1.

3. The chuck and / or the sensor module (42) comprises at least one vacuum chamber (44) for mounting or clamping a wafer; The modular wafer chuck system (40) of claim 1 or 2.

4. the chuck and / or the sensor module (42) have at least one connection device (50) for connecting a vacuum line (52); The modular wafer chuck system (40) of claim 3.

5. further comprising an insulating layer (46) for removably coupling with the chuck (1) and / or the sensor module (42); The modular wafer chuck system (40) of any one of claims 1 to 4.

6. said sensor module (42) comprises a first communication interface (12a) for communicating with a temperature measurement unit (43), said first communication interface (12a) being suitable for transmitting electrical signals from said at least one temperature measurement means (6) and said temperature measurement unit (43) being suitable for receiving electrical signals from said at least one temperature measurement means (6) of said sensor module (42); The modular wafer chuck system (40) of any one of claims 1 to 5.

7. The chuck (1) may include a sensor module (42) and / or a wafer (2) mounted or clamped thereon for temperature control of the chuck (1) and / or the sensor module (42) and / or a wafer (2) mounted or clamped thereon. a second communication interface (12b) for supplying and / or discharging a temperature control medium (18) into and / or out of the chuck (1); and / or a third communication interface (12c) for communicating with at least one electrothermal converter (9) of said chuck (1); The modular wafer chuck system (40) of claim 6.

8. connected to the temperature measurement unit (43) and the second and / or third communication interfaces (12b, 12c), a control unit (14) of the temperature control device (10) for controlling or regulating the temperature of the chuck (1) and / or the sensor module (42) and / or the wafer (2) based on the measured temperatures of the sensor module (42) and / or the chuck (1) and / or the wafer (2), The modular wafer chuck system (40) of claim 7.

9. a first communication interface (12a) suitable for transmitting electrical signals for communicating with said chuck (1); Connected to the first communication interface (12a), receiving electrical signals from a plurality of temperature measuring means (6) in the sensor module (42); Selecting at least one of the temperature measuring means (6) as a reference temperature measuring means; and a control unit (14) for controlling or regulating the temperature of the chuck (1) based on the temperature of the sensor module (42) or the chuck (1) or the wafer (2) measured by the selected reference temperature measuring means. The modular wafer chuck system (40) of any one of claims 1 to 8.

10. A sensor module (42) for coupling to a chuck (1) of a modular wafer chuck system (40), comprising: at least one temperature measuring means (6) for measuring the temperature of said sensor module (42) and / or the associated chuck (1) and / or a wafer (2) mounted or clamped by said sensor module (40) and / or said chuck (1); a first bonding surface (42a) for mounting or clamping a wafer (2); a second coupling surface (42b) for coupling with the chuck (1); the sensor module (42) is not configured to control the temperature of the sensor module (42) and / or the mounted or clamped wafer (2); A sensor module (42).

11. a plurality of temperature measuring means (6), and / or At least one vacuum chamber (44) for mounting or clamping the wafer (2), and / or a connection device (50) for connecting a vacuum line (52), and / or a first communication interface (12a) suitable for transmitting electrical signals from said at least one temperature measuring means (6) for communicating with a temperature measuring unit (43) for controlling the temperature of the chuck (1), said temperature measuring unit (43) being suitable for receiving an electrical signal from said at least one temperature measuring means (6) of said sensor module (42); The sensor module (40) of claim 10.

12. A method for arranging modules of a modular wafer chuck system (40), comprising: Providing a chuck (1) for temperature control of a wafer (2); and coupling a sensor module (42) to the coupling surface (1a) of the chuck (1); The sensor module (42) a first bonding surface (42a) configured to mount or clamp a wafer (2); at least one temperature measuring means (6) for measuring the temperature of the sensor module (42) and / or the chuck (1) and / or a wafer (2) mounted or clamped by the wafer chuck system, the sensor module (42) is not configured to control the temperature of the sensor module (42) and / or the mounted or clamped wafer (2); method.

13. further comprising the step of mounting or clamping a wafer (2) using a first bonding surface (42a) of the sensor module. The method of claim 12.

14. further comprising the step of temperature control of the chuck (1), the sensor module (42), and / or the mounted or clamped wafer (2). The method of claim 13.

15. detecting the position of a testing means (22) for testing the wafer (2); determining respective spatial distances between said testing means (22) and a plurality of temperature measuring means (6) for measuring the temperature of said chuck (1) or said sensor module (42) or a wafer (2) mounted or clamped by said chuck (1); selecting at least one temperature measurement means (6) from the plurality of temperature measurement means (6) as a reference temperature measurement means; and controlling or adjusting the temperature of the chuck (1) based on the temperature of the chuck (1), or the sensor module (42), or the wafer (2) measured by the selected reference temperature measurement means.

15. The method of claim 12, 13 or 14.

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