Component arrangement body, package and package arrangement body, and manufacturing method

Abstract

The present invention relates to a component arranging device comprising a carrier substrate (1), a spacer (3) arranged on the carrier substrate to surround an installation space (1a) and having an outlet opening on its surface facing away from the carrier substrate, an optical component (2) arranged in the installation space, contact connections for electrically connecting the optical component to external contacts arranged outside the installation space, a cover substrate (4) arranged on the spacer and covering the outlet opening in a light-transmitting manner, and a light-reflecting surface (6) formed on an anisotropically etched silicon part and arranged in the installation space as a surface inclined at an angle of approximately 45° with respect to the surface of the carrier substrate facing the installation space, such that light emitted horizontally onto the light-reflecting surface can be emitted vertically through the opening and the cover substrate and vice versa. The present invention also relates to a method for manufacturing the component arranging device, as well as to a package, a package arranging device and a manufacturing method.

Description

Detailed Description of the Invention

[0001] The present invention relates to a component arrangement body, a package and a package arrangement body, and a manufacturing method.

[0002] 〔Background〕 Regarding a component arrangement body, for example, it is known to arrange an optical component that emits or absorbs light in a housing. The component arrangement body can be used to manufacture a package.

[0003] A manufacturing method of such a component arrangement body is known, for example, from Document WO2011 / 035783 A1. The spacer is arranged on a carrier substrate so that the spacer surrounds the installation space in which the components are arranged. By placing a cover substrate on the spacer, the installation space is closed. The cover substrate can be provided with a light-transmissive outlet opening through which light can be emitted or received. Metallization can be provided on the wall surface of the spacer facing the installation space to provide a light-reflecting mirror coating.

[0004] Document WO2016 / 055520 A1 describes a method for manufacturing a package for a laser component having a housing including a carrier having a cavity with a bottom surface and side walls. The cavity extends from the bottom surface. In the cavity, a laser chip is arranged on the bottom surface and its emission direction is oriented parallel to the bottom surface. A reflecting element is also arranged in the cavity, and this cavity is such that the reflecting element is placed on the edge between the bottom surface and the side wall. The reflecting surface of the reflecting element forms an angle of 45 degrees with the bottom surface of the cavity. Also, the emission direction surrounds the reflecting surface of the reflecting element at an angle of 45 degrees.

[0005] The component arrangement body is also known from Document WO2017 / 149573 A1.

[0006] In Document US7 177 331 B2, a laser diode is attached to what is known as a TO housing.

[0007] 〔Summary〕 The object of the present invention is to provide a component arrangement, a package, as well as a package arrangement and a manufacturing method, in which improved optical conduction or deflection of a light beam is provided within an installation space equipped with optical components.

[0008] This object is solved by the component arrangement, the package, and the package arrangement according to independent claims 1, 11, and 13. Furthermore, a method for manufacturing the component arrangement, the package, and the package arrangement according to independent claims 10, 14, and 15 is provided.

[0009] According to one aspect, the component arrangement comprises the following: a carrier substrate; a spacer disposed on the carrier substrate so as to surround the installation space and having an exit opening on a surface facing away from the carrier substrate; an optical component disposed within the installation space; a contact connection that conductively connects the optical component to an external contact disposed outside the installation space; a cover substrate disposed on the spacer and covering the exit opening in a light-transmissive manner; and a light reflecting surface formed on an anisotropically etched silicon component and disposed within the installation space as an inclined surface at an angle of approximately 45 degrees with respect to the surface of the carrier substrate facing the installation space, such that light radiated horizontally onto the light reflecting surface can be radiated vertically through the opening and the cover substrate and vice versa.

[0010] According to a further aspect, a package having the component arrangement and a housing in which the component arrangement is housed, as well as a package arrangement having a flat arrangement of a plurality of packages are provided.

[0011] Another aspect relates to a method for manufacturing an anisotropically etched silicon component from a silicon single crystal by anisotropic etching, the method comprising the steps of: tilting the silicon single crystal by approximately 9.7 degrees with respect to the 100 crystal orientation such that a 111 crystal plane having an inclination of approximately 45 degrees is formed; and manufacturing a component arrangement using the anisotropically etched silicon component, wherein the light reflecting surface is formed on the component arrangement using the 111 crystal plane having an inclination of approximately 45 degrees.

[0012] According to an additional aspect, a method for manufacturing a package and a method for manufacturing a package arrangement are provided, where the package / package arrangement is manufactured in a panel, for example, by wafer level packaging.

[0013] With the help of the proposed technology, a light beam traveling horizontally within an installation space provided in a component arrangement can be deflected by a light reflecting surface inclined at approximately 45 degrees with respect to the horizontal direction, and vice versa. Thus, the light emitted from the optical component can be deflected from the horizontal direction to the vertical direction in order to emit light rays through an exit opening. Conversely, light incident vertically through the exit opening can be deflected horizontally by the light reflecting surface. The light reflecting surface is provided with a silicon component anisotropically etched as the surface of this silicon component.

[0014] The optical component can be designed as a light emitting component or a light absorbing component, for example, as a light emitting diode or a light absorbing photodiode, such as an avalanche photodiode or a laser diode.

[0015] The light emitting component can be designed to emit a light beam in a directional and focused form, for example, in the form of a substantially directional laser emission with a maximum intensity central emission accompanied by an arbitrary beam divergence angle (beam width).

[0016] The proposed technology enables the optical component to be arranged within the installation space such that the emission of the emitted light beam or the incidence of the received light beam can occur in the vertical direction. In order to emit light rays in the vertical direction (with respect to the surface of the carrier substrate), in contrast to the prior art, it is not necessary to arrange the optical component in a standing position within the installation space as provided in the prior art (see, for example, US 7 177 331 B2). With the help of the proposed technology, the overall height of the component arrangement can be reduced and the assembly can be simplified.

[0017] The contact connection can have a through - connection passing through the carrier substrate, and the external contact can be arranged on the lower side of the carrier substrate.

[0018] A contact connection can be provided laterally from the installation space, for example, on the surface of the carrier substrate facing the installation space. Specifically, the laterally drawn - out contact connection can be formed by passing between the carrier substrate and the spacer. The contact connection can comprise a plurality of individual contact connections.

[0019] The contact surface of the anisotropically etched silicon component can be substantially parallel to the surface of the carrier substrate facing the installation space. In this embodiment, the light - reflecting surface is inclined at an angle of approximately 45 degrees with respect to the contact surface.

[0020] The anisotropically etched silicon component can be arranged within the installation space surrounded by the spacer. Here, the anisotropically etched silicon component has a light - reflecting surface provided thereon and can be arranged separately and at a distance in the installation space away from the spacer. Specifically, it can be arranged such that there is no contact between the anisotropically etched silicon component and the spacer surrounding its installation space.

[0021] The spacer can be at least partially formed by the anisotropically etched silicon component. In this alternative embodiment, the anisotropically etched component forms the spacer partially or completely. In one embodiment, the spacer surrounding the installation space can be completely formed, for example, as a single piece of anisotropically etched silicon component, from the anisotropically etched silicon components around the installation space. In various embodiments, the inner wall surface of the spacer facing the installation space has an inclination of approximately 45 degrees, at least in the region of the light - reflecting surface. In these or other embodiments, the spacer can be formed as an integral frame continuously surrounding the installation space.

[0022] The first wall surface of the spacer disposed outside the region having a light reflecting surface and facing the installation space can be inclined with respect to the vertical direction at a first angle different from 45 degrees. The wall surface of the spacer facing the installation space has an inclination of about 45 degrees in the region of the light reflecting surface, while the first wall surface outside the region having the light reflecting surface is inclined at a different angle, for example, about 64.5 degrees. The first wall surface of the spacer can be disposed on the opposite side of the light reflecting surface.

[0023] The second wall surface of the spacer is different from the first wall surface, faces the installation space, is disposed outside the region having a light reflecting surface, and can be inclined with respect to the vertical direction at a second angle different from the first angle and different from 45 degrees. The first wall surface and / or the second wall surface having an inclination angle different from 45 degrees can be part of the spacer formed by an anisotropically etched silicon component or disposed outside such a part. For example, the second angle can be about 55.3 degrees. The second wall surface can be disposed on a part of the spacer adjacent to the light reflecting surface and / or the first wall surface. The walls facing each other can be formed with an inclination of the second angle. Alternatively, the wall surface different from 45 degrees can also be designed at other angles.

[0024] The spacer can be formed as a one-piece or multi-piece frame using an anisotropically etched silicon component, which continuously and completely surrounds the installation space. In a plan view, the frame can have a substantially trapezoidal shape in either the region of the upper opening and / or the lower opening of the passage surrounded by the frame. When the upper opening or the lower opening has a substantially trapezoidal shape respectively, the edges of the upper and lower openings can extend parallel to each other in pairs on one or more sides, particularly all sides, of the passage. The trapezoidal shape in one embodiment can be formed over a width substantially less than 1 / 3 of the full width of the passage, rather than over the full width of the passage.

[0025] The opening angles on the side with the 45-degree mirror surface (within the corner region of the passage) can each be approximately 83.2 degrees. On the opposite side, the angles are each approximately 96.8 degrees. A design can be provided in which a plurality of openings of this type are provided in the anisotropically etched silicon component, each having a separately formed installation space for accommodating one or more optical components.

[0026] The cover substrate can at least partially fill the installation space. The cover substrate can partially or completely fill the installation space. For example, an epoxy resin or a silicone resin can be introduced into the installation space as the cover substrate. Alternatively, the installation space can be designed as a hollow space without a cover substrate, in which the optical component is arranged. In particular, a part of the hollow space under the exit opening can be made without a cover substrate.

[0027] The light reflecting surface can have a surface-side reflective coating. The surface-side reflective coating can be generated, for example, by metallization or a dielectric mirror.

[0028] The optical component can have a lateral light exit / entrance through which light can enter and exit in the horizontal direction. The incident or exiting light rays are deflected by the light reflecting surface such that a deflection occurs between the horizontal and vertical directions or vice versa. When the optical component is designed as a light-emitting diode, the emitted light beam exits through the lateral light exit. When the optical component is designed as a photodiode, the incident light rays enter horizontally through the lateral light entrance, for example, an incident window.

[0029] The optical component can be arranged on a submount arranged on a carrier substrate. The submount can be made of, for example, silicon carbide or aluminum nitride.

[0030] In a method of manufacturing a component arrangement, anisotropically etched silicon components may be manufactured by wet chemical etching, for example, by etching using a potassium hydroxide solution (KOH). Another suitable etching solution for anisotropic etching of silicon is, for example, tetramethylammonium hydroxide (TMAH).

[0031] For the purpose of manufacturing a package and / or a package arrangement, the package can be used at the panel or wafer level.

[0032] When manufacturing using wafer-level processing, one or more circumferential silicon frames, the entire cap substrate, and / or single or multiple elements having a 45-degree inclined reflective surface can be manufactured at the wafer level. The advantage is that many components / caps can be manufactured simultaneously at the wafer level. Individual caps for packaging are manufactured after separation, for example, by dicing the cap substrate. Components can be packaged by applying the separated cap to a chip or a substrate on which the components are pre-assembled. Components can also be pre-assembled within a panel, i.e., multiple components are already mounted on a carrier substrate, and then packaged by applying a single cap or a cap array (a separated panel having multiple cap structures from a cap substrate manufactured at the wafer level). Wafer-level packaging in the sense used here then means packaging (encapsulating) all components on the wafer in one step using a wafer-shaped cover substrate. For example, this applies when the components are completely pre-assembled on a through-plated substrate, for example, a wafer-shaped silicon substrate, and then all components are simultaneously packaged by bonding on a cap wafer. Subsequently, individual packages are provided by separating the composite.

[0033] Regarding the package, with respect to the housing that houses the component arrangement, as viewed from the top surface of the housing, light may be emitted substantially from the center or may be incident in the region of the exit opening / entrance opening. In this way, substantially centered light emission / light absorption is realized with respect to the package.

[0034] The cover substrate can be made of, for example, borosilicate glass such as Bofofloat33 or Mempax made by Schott AG, quartz glass, sapphire glass, or other glasses such as AF32, D263T, BK7 or B270 made by Schott AG, Eagle XG or Pyrex made by Corning, SD2 made by Hoya, or EN-A1 made by Asahi. However, the cover substrate can also be made of, for example, silicon or germanium for applications in the IR range. The cover substrate can further have a substrate coating, for example, an anti-reflection coating. The coating can be designed for different wavelength ranges and can be provided on one or both sides. It is also possible to provide filter coatings and / or opaque aperture structures for different wavelength ranges.

[0035] Furthermore, in one embodiment, integration of optical elements, for example, a lens on the cover substrate can be provided. Here, for example, a convex lens made of a polymer, a glassy material, silicon, or germanium can be considered. The use of a microstructured Fresnel lens is also possible.

[0036] One or more through contacts are provided on the carrier substrate for electrical contact of the optical components. The contacts on the back surface enable subsequent assembly in an SMD configuration, for example, by tin / silver wave soldering or assembly using a conductive adhesive.

[0037] The carrier substrate can consist of, for example, ceramics such as silicon, aluminum nitride, silicon carbide, aluminum oxide, LTCC ceramic (low temperature co-fired ceramic) or HTCC ceramic (high temperature co-fired ceramic), glass or a DBC (direct bonded copper) substrate. Furthermore, it can be provided using a metal substrate, for example, an IMS (insulated metal substrate) made of copper, aluminum or other metals. The use of a carrier substrate made of plastic such as FR4 is also conceivable.

[0038] The connection between the spacer and the carrier substrate can be made, for example, using a soldering bond, preferably by a eutectic bond. For this purpose, a combination of metals of preferably eutectic composition, for example, gold and tin, copper and tin, gold and germanium, tin and silver, gold and indium, copper and silver, or gold and silicon, is applied to the back surface of the carrier substrate or the spacer to form a eutectic bonding phase in the soldering process and connect the spacer to the carrier substrate. The spacer and the carrier substrate are provided with a suitable base metallization for the soldering process. The combination of metals for the eutectic bond can be provided, for example, as a preform. As another method, the combination of metals can be applied electrically as a paste or to one of the bonding partners.

[0039] What is known as an alloy stop can be provided, for example in the case of a thin metal layer, to be placed under the actual bonding phase. Thus, for example, a layer of platinum or nickel, or an alloy of chromium and nickel, is suitable for the eutectic bond of gold and tin.

[0040] By using a very high surface quality with Ra < 1 nm, a direct bonding method can also be used. This can be a direct fusion bond that is hydrophobic or hydrophilic with respect to the surface properties of the bonding partners. The two bonding partners are first connected to each other by van der Waals bonds via a preliminary bond. In a subsequent annealing process, covalent bonds are formed at the bonding interface. The fusion bond can also be plasma-activated. This makes it possible to significantly reduce the temperature load during annealing. Anodic bonding can be provided as a further direct bonding method.

[0041] As an alternative to the described method, a reactive bonding process can also be used. In reactive bonding, an alternating layer metal stack is applied. This metal stack can be provided, for example, by a vapor deposition method such as sputtering or in the form of a film. Electrical or laser-induced pulses lead to the generation of a short-term high-temperature reaction that "welds" the two bonding partners. The metal layer is, for example, a double-layer period of palladium and aluminum, or copper oxide and aluminum.

[0042] Furthermore, a solid-liquid interdiffusion bond can be used, for example, from combinations of metals such as gold and indium, gold and tin, or copper and tin. In this method, the bonding process is determined by the diffusion of one bonding partner into the other during the annealing process. The actual bonding phase can then withstand higher temperatures. Furthermore, a permanent connection can be made, for example, by thermocompression bonding to bond gold to gold, copper to copper, or aluminum to aluminum. Glass frit bonding can also be provided.

[0043] In the case of a transparent substrate, if the surface quality of the bonding surface is appropriate, the carrier substrate and the spacer can be connected using a laser welding method. The use of an epoxy resin, a silicone resin, or other adhesives can also be considered.

[0044] For example, the spacer and the cover substrate can be connected using a direct bonding method. Such methods include, for example, anodic bonding or fusion bonding. Reactive bonding or adhesive bonding can also be used. Furthermore, here, solid-liquid interdiffusion bonding can also be used. Laser welding is also suitable for joining the spacer and the cover substrate. Here, after the two substrates are "optically contacted", they are welded together using a laser. To join the spacer and the cover substrate, it is conceivable to use all of the above-described bonding methods for the spacer and the carrier substrate.

[0045] Therefore, the embodiments described in relation to the component arrangement can be provided in relation to a method of manufacturing the component arrangement.

[0046] 〔Description of Exemplary Embodiments〕 Hereinafter, with reference to the drawings, further exemplary embodiments will be described in more detail.

[0047] In the drawings, FIG. 1 shows a component arrangement in which optical components are arranged in an installation space and connected to an external contact through a contact connection passing through a carrier substrate.

[0048] FIG. 2 shows a component arrangement in which optical components are arranged in an installation space and connected to an external contact through a laterally drawn-out contact connection.

[0049] FIG. 3 shows a schematic diagram of a component arrangement in which an installation space having optical components is filled with a cover substrate.

[0050] FIG. 4 shows a schematic diagram of a component arrangement in which a clad is formed on a cover substrate, thereby filling an installation space provided with optical components.

[0051] FIG. 5 shows a schematic diagram of a component arrangement in which an anisotropically etched silicon component arranged in an installation space away from a spacer provides a light reflecting surface in the installation space.

[0052] Figure 6 shows a schematic diagram of a spacer formed by an anisotropically etched silicon component and the spacer formed as a frame.

[0053] Figure 7a is a masking aperture selected for an anisotropic wet chemical etching process having a compensation structure and shows a plan view from an optical microscope of the etched frame structure.

[0054] Figure 7b is a masking aperture selected for an anisotropic wet chemical etching process having a compensation structure and shows a plan view from an optical microscope of a further etched frame structure.

[0055] Figure 8 shows a schematic cross - section of a wafer having a plurality of apertures, each aperture being usable to form a component arrangement for manufacturing a cap array.

[0056] Figure 9 shows a schematic diagram of a spacer formed of silicon components each anisotropically etched, and the centering of the mirror surface in the frame shape enables the central emission / incidence of light.

[0057] Figure 10 shows a schematic diagram of an arrangement including a spacer formed by an anisotropically etched silicon component, on which a cover substrate is disposed, and the spacer has a structured bonding surface, for example a metallized back surface, on its back surface.

[0058] Figure 11 shows a schematic diagram of an arrangement in which a part of a glass fiber is disposed on the opposite side of a light - reflecting surface for coupling / separating light.

[0059] Figure 12 shows a schematic diagram of an arrangement in which two individual mirror elements are disposed in a housing.

[0060] Figure 13 shows a schematic diagram of two components manufactured by panel or wafer - level packaging.

[0061] FIG. 14 shows a schematic diagram of an arrangement formed by a spacer element having an installation space with a Frank angle of the mirror surface of approximately 54.7 degrees.

[0062] FIG. 15 shows a schematic diagram of a component in which a spacer element and a carrier substrate are integrally formed and a through contact is provided by a dry etching process.

[0063] FIG. 16 shows a schematic diagram of a component in which a spacer element and a carrier substrate are integrally formed and a through contact is provided by a wet chemical etching process.

[0064] FIG. 17 shows a schematic diagram of a component in which the walls of the installation space are substantially vertical except for the 45-degree mirror surface.

[0065] FIG. 18 shows a schematic diagram of a component arrangement in which a lens is arranged on a cover substrate.

[0066] FIG. 19 shows a schematic diagram of a component arrangement having a circumferential spacer element with a mirror plane combined with a single mirror element.

[0067] FIG. 20 shows a schematic diagram of a component arrangement designed such that the lower opening of a spacer designed as an anisotropically etched silicon component has a chamfer that is substantially vertical.

[0068] FIG. 21 shows a schematic diagram of a component arrangement designed such that the lower opening in a spacer designed as an anisotropically etched silicon component has an undercut with respect to the surface of the spacer.

[0069] FIG. 1 shows a component arrangement in which an optical component 2 is arranged on a carrier substrate 1 within an installation space 1a. The optical component 2 is, for example, a light-emitting diode or a light-receiving diode, such as a laser diode or a photodiode. A spacer 3 made of silicon is provided. A cover substrate 4 is arranged on the spacer 3.

[0070] In an exemplary embodiment, this optical component 2 is mounted on a submount 5 made of, for example, silicon carbide or aluminum nitride. Alternatively, the optical component 2 may be directly disposed on the carrier substrate 1. The optical component 2 is attached onto the submount 5 or directly onto the carrier substrate 1, for example, by eutectic soldering of gold and tin. However, other processes such as gold or indium bonding or sintering bonding can also be used. The chip can be implemented by any of a flip-chip process, contacting with wire bonding, and ground contacting in combination with wire bonding.

[0071] The silicon spacer 3 is manufactured by anisotropic KOH etching from a silicon single crystal tilted by about 9.7 degrees with respect to the 100 crystal orientation (off-orientation). As a result, a 111 crystal plane having a gradient 6 at an angle of about 45 degrees with respect to the surface is formed. And the opposite plane is formed at an angle of about 64.5 degrees. The side crystal planes can have an angle of, for example, about 55.3 degrees.

[0072] The spacer 3 designed as an anisotropically etched silicon component has a metal mirror coating 6a in the illustrated embodiment. Alternatively, another optical (light-reflecting) layer, for example, a dielectric mirror for a specific wavelength, can also be provided. In the case of an optional metal mirror coating 6a, aluminum is used in the UV range, silver in the visible range, and gold in the IR / NIR range. A metal copper mirror coating is advantageous from the "red" wavelength range (wavelengths greater than about 600 nm). Alternatively, different coatings can also be provided on the inclined sidewalls within the cavity. For example, on sidewalls different from 45 degrees, a particularly opaque / light-absorbing layer can be provided for a desired wavelength range to avoid reflection in the installation space.

[0073] The naturally grown single crystal 111 plane (light reflecting surface / mirror surface) is inclined at 45 degrees, is produced by the above-described wet chemical etching process, and is very smooth compared to other manufacturing methods such as machining or dry etching methods. As a result, there is very low scattering and a low-loss beam deflection occurs.

[0074] Also, the optical component 2 mounted on the carrier substrate 1 can be a side-emitting component, for example, a laser diode. The 45-degree gradient 6 enables light emitted horizontally in the lateral direction from the optical component 2 to be radiated vertically by appropriate deflection.

[0075] The cover substrate 4 can consist of, for example, borosilicate glass such as Borofloat33 or Mempax from Schott AG, fused silica, sapphire glass, or other glasses such as AF32, D263T, BK7, or B270 from Schott AG, Eagle XG or Pyrex from Corning, SD2 from Hoya, or EN-A1 from Asahi. The cover substrate 4 can also consist of, for example, silicon or germanium for applications in the IR range. The cover substrate 4 can further have a substrate coating, for example, an anti-reflection coating or a filter coating. The coating can be designed for different wavelength ranges on one or both sides and can be structured as required. An opaque structured coating can also be used in that wavelength range, for example, to form an aperture.

[0076] Furthermore, for the integration of optical elements, in one embodiment, for example, a lens on the cover substrate 4 can be provided. For example, here, a convex lens made of a polymer, glass or other glassy material, silicon or germanium (see FIG. 18) can be considered. The use of a microstructured Fresnel lens is also possible.

[0077] In the carrier substrate 1, the vias 7 connected to one or more bonding connections 2a are provided for the electrical contact of the optical component 2. In addition to the bonding connection 2a of this embodiment, a ground contact 2b is provided, which is also connected to the via 7. The backside contacts 8 enable subsequent mounting in an SMD configuration, for example, by tin-silver wave soldering.

[0078] The carrier substrate 1 can consist of, for example, ceramics such as silicon, aluminum nitride, silicon carbide, aluminum oxide, LTCC ceramic (low-temperature co-fired ceramic) or HTCC ceramic (high-temperature co-fired ceramic), glass or a DBC (direct bonded copper) substrate. Furthermore, the use of a metal substrate, for example, an IMS (insulated metal substrate) made of copper, aluminum or other metals can be provided. The use of a carrier substrate made of plastic such as FR4 is also conceivable.

[0079] The connection 9 between the spacer 3 and the carrier substrate 1 can be made, for example, by a soldering bond, preferably by a eutectic bond. For this purpose, a combination of metals having a suitable eutectic composition such as gold and tin, copper and tin, gold and germanium, tin and silver, gold and indium, copper and silver, tin and silver, silver and copper, or gold and silicon is applied to the backside of the carrier substrate 1 or the spacer 3. Thereby, in a subsequent soldering process, a eutectic bonding phase between the spacer 3 and the carrier substrate 1 is formed. In order to achieve the best possible layer adhesion of the metal combination on the carrier substrate 1 or the spacer 3, a layer of pure titanium, tungsten titanium or tungsten titanium nitride can be placed under the applied metal laminate. The latter has the advantage of providing a diffusion barrier against gold. The bonding partners must be equipped with a counter-metallization for the bonding process in order to ensure good wetting of the bonding phase formed during the soldering process.

[0080] As a rule, for the bonding of the carrier substrate 1 and the spacer 3, solder containing lead can also be used. As a further method for bonding, a sintering process such as silver or gold sintering can be provided.

[0081] Furthermore, for example, a thin metal layer can be provided and placed under the actual bonding phase of what is known as an alloy stop. For example, in the case of a eutectic bond of gold and tin, a layer of platinum, nickel or an alloy of chromium and nickel is suitable for this purpose.

[0082] By using a very high surface quality with Ra < 1 nm, a direct bonding method can also be used. This can be a direct fusion bond that is hydrophobic or hydrophilic with respect to the surface properties of the bonding partners. The two bonding partners are first connected to each other by van der Waals bonds via a preliminary bond. In a subsequent annealing process, covalent bonds are formed at the bonding interface. The fusion bond can also be plasma-activated. This can significantly reduce the temperature load during annealing. Anodic bonding can also be provided as a further direct bonding method. The advantage of the latter method is that the surface quality requirements of the bonding partners are not as strict as those for fusion bonding.

[0083] As an alternative to the described methods, a reactive bonding process can also be used. In reactive bonding, a metal stack of alternating metal layers is applied. Electrical or laser-induced pulses lead to a short-term high-temperature reaction that "welds" the two bonding partners together. The metal layers are, for example, a bilayer period made of palladium and aluminum or made of copper oxide and aluminum. Furthermore, for example, solid-liquid interdiffusion bonding with a metal combination of gold and indium, gold and tin, or copper and tin is also possible. In this method, the bonding process is determined by the diffusion of one bonding partner into the other during an annealing process. The actual connection stage is then more resistant to higher temperatures. Alternatively, glass-frit bonding can also be provided.

[0084] As the connection 10 between the spacer 3 and the cover substrate 4, for example, a direct bonding method can be used. Such methods are, for example, anodic bonding or fusion bonding. In the case of anodic bonding, silicon can be directly bonded to a cover substrate made of alkali glass. Also, it is possible to anodically bond aluminum to a cover substrate made of alkali glass. In this case, the mirror ring on the 45-degree mirror surface is not structured, that is, the upper side of the silicon spacer is completely coated with aluminum.

[0085] Reactive bonding or adhesive bonding can also be used. Furthermore, here, solid-liquid interdiffusion bonding is also possible. Laser welding is more suitable for joining the spacer and the cover substrate. Here, the two substrates are brought to "optical contact" and then welded together using a laser. The joining of the spacer and the cover substrate can also be realized, for example, as a thermocompression bonding of a metal combination of gold and gold, a metal combination of copper and copper, or a metal combination of aluminum and aluminum.

[0086] Depending on the bonding method, the housing is in a sealed state or a quasi-sealed state.

[0087] Figure 2 shows the arrangement of the optical component 2 with laterally realized contacts. Here, the conductor trace 11 is applied to the carrier substrate 1 and led outward below the spacer 3. The spacer 3 and the realized contacts are separated from each other by an electrical insulation layer 12. This layer can be made of, for example, SiOx or silicon nitride. The connection between the cap and the board or the insulation layer is established, for example, by eutectic metal bonding.

[0088] Figure 3 shows a component arrangement without the cover substrate 4. In this case, the installation space 1a is filled with, for example, an epoxy resin or a silicone resin and is in a quasi-sealed state. This arrangement can be used, for example, with a short-pulse laser. The connection to the carrier substrate can also be made by adhesive bonding.

[0089] FIG. 4 also shows a component arrangement without a cover substrate. In this embodiment, not only is the installation space 1a filled, but the entire component is overmolded.

[0090] FIG. 5 shows, for example, the arrangement of side-emitting components within a ceramic package. In this package, a single anisotropically etched silicon component 50 is provided within the installation space 1a for beam deflection and functions as a mirror element. This type of configuration can also be provided for classical TO housings.

[0091] FIG. 6 shows a plan view of the anisotropic etching structure of a mirror frame 60. The passage 61 in silicon resulting from the crystal tilt is trapezoidal in both the region of the upper opening 61a and the region of the lower opening 61b and is axially symmetric in one direction. The corner angles of the long sides with a 45-degree mirror surface are each approximately 83.2 degrees. On the opposite short sides, the angles are each approximately 96.8 degrees. The edges of the upper opening 61a and the lower opening 61b extend in pairs parallel to each other.

[0092] FIG. 7a shows a plan view of the anisotropically etched structure of a mirror frame 70. In this case, the masking openings for the anisotropic etching process are not selected along the trapezoidal 111 crystal plane (see FIG. 6), but are formed with a compensation structure. As a result, in the passage 71, the upper opening 71a of the etching pit is not completely trapezoidal compared to FIG. 6 (in contrast to the lower opening 71b), but is limited in one direction within its range. In this way, the lateral dimension of the passage 71 can be reduced, and thus a larger number of etched structures can be arranged on the silicon substrate. Different compensation structures can be provided depending on the application.

[0093] Figure 7b shows a plan view of another anisotropically etched structure of the mirror frame 70. For the same features, the same reference numerals as in Figure 7a are used in Figure 7b. This depiction is based on the design of an etched silicon component in which the trapezoid formed with respect to the lower opening 71b (similarly for the upper opening 71a) does not extend across the full width of the passage 71, but rather the size and shape of the mask opening are selected such that it extends substantially over at least 2 / 3 of the full width of the passage. In this case, due to the inclined crystal, the etching process cannot produce completely straight side surfaces of the upper opening 71a and the lower opening 71b (i.e., a continuous trapezoidal shape without a buckling region). A post-treatment can be provided to form edges parallel to the regions of the upper opening 71a and the lower opening 71b (see Figure 6). With an appropriate substrate thickness, the number of etched structures on the silicon wafer can be further increased for a specific lateral opening size of the masking.

[0094] Figure 8 shows an arrangement of a plurality of openings in the form of an array 80. As a result of this arrangement, a plurality of components can be encapsulated simultaneously within the panel, thus saving space and, for example, increasing the light collection efficiency of the component arrangement. This is particularly advantageous for systems with high light output. The array 80 can be designed as a panel consisting only of the spacer 3 having a 45-degree mirror surface, or it can be designed in combination with a cover substrate as a panel of encapsulants having a 45-degree mirror surface.

[0095] Figure 9 shows a circumferential spacer 3 designed as an anisotropically etched silicon component having a 45-degree mirror surface. In this embodiment, the spacer 3 is designed such that a light beam can exit or enter from the center of the package ("central emission"). Such a spacer 3 can also be designed with a cover substrate as a capsule encapsulation (see Figure 10).

[0096] FIG. 10 shows a semi-finished product consisting of a spacer 3 designed as an anisotropically etched silicon component having a 45-degree mirror surface and a cover substrate. In order to bond to the carrier substrate 1, a structured bonding surface, for example a metallization, can be provided. Different embodiments of this arrangement, and the associated methods for connecting the spacer 3 and the carrier substrate 1, are described in the embodiment of FIG. 1. This also applies to the bonding of the spacer 3 and the cover substrate.

[0097] FIG. 11 shows an arrangement in which a silicon element having a 45-degree mirror surface is used to couple an optical waveguide, for example an optical fiber. In this way, light can be decoupled from the package or coupled to another optical waveguide (changing the direction of the signal).

[0098] FIG. 12 is a diagram showing the arrangement of a side-emitting component, for example a laser diode or an LED, in a ceramic package. Compared with FIG. 5, in this embodiment, an arrangement of a plurality of silicon elements having a 45-degree mirror surface is provided. This is advantageous when the side-emitting component emits laterally in many directions. A light beam radiating laterally in one direction can also be provided, for example, to calibrate the laser diode via another monitor photodiode installed in the package.

[0099] Figure 13 shows an arrangement in which components 130 and 131 are disposed in separately formed adjacent installation spaces 132 and 133. In this embodiment, components 130 and 131 are packaged at the wafer level. For this purpose, a carrier substrate made of, for example, silicon can be provided. The silicon carrier substrate 1 is provided with through contacts 7. The through contacts 7 can be realized, for example, by dry or wet etching, with subsequent metal filling of the holes by an electroplating process. Also, contacts for the components are provided on the front side of the carrier substrate, and contacts for subsequent mounting by SMD technology are provided on the back side. For electrical insulation of the through contacts, the silicon carrier substrate 1 made of silicon may be passivated by an inorganic layer prior to electroplating and contact formation. For this purpose, thermal oxidation of silicon, for example, deposition of a nitride layer in an LPCVD process for deposition of an insulating layer or other CVD processes (e.g., PECVD, plasma enhanced CVD) can be considered. Prior to electroplating the metal filling of the through contacts, a conductive seed layer must be applied to the previously deposited passivation layer. This can be done, for example, by a sputtering process.

[0100] In this embodiment, first a number of components are mounted in series on the prepared carrier substrate 1, which can exist in the form of a wafer or a rectangular panel, and then, in a further step, are joined by applying a cap wafer or a cap array at the wafer level or as a panel. In this way, a number of encapsulated components are formed simultaneously. Next, when the composite is separated, individual packages are provided.

[0101] Figure 14 shows an arrangement in which the spacer 3 is manufactured by anisotropic wet chemical etching from a single crystal silicon not inclined with respect to the 100 direction. As a result, all the 111 crystal planes are formed at an angle of about 54.7 degrees. In this embodiment, upward emission from the package in many directions is preferred. As described above with reference to Figure 13, the manufacturing can also be represented as packaging by wafer level packaging.

[0102] Figure 15 shows an arrangement in which the spacer 3 and the carrier substrate 1 are made into one piece of silicon. In this method, cavities are etched into the silicon substrate on the surface by anisotropic wet chemical structuring. These cavities are connected on the back surface to dry-etched through contacts. The silicon substrate 1 is electrically insulated as described in Figure 13.

[0103] Figure 16 shows an arrangement in which the spacer 3 and the carrier substrate 1 are made into one piece of silicon. In this approach, cavities are etched into the silicon substrate on the surface by anisotropic wet chemical structuring. These cavities are connected on the back surface to through contacts 7 manufactured by anisotropic wet chemical etching, in contrast to Figure 15. The silicon substrate 1 is electrically insulated as described in Figure 13.

[0104] Figure 17 shows an arrangement in which, using a dry etching method, first an installation space is etched almost vertically. In a subsequent wet chemical anisotropic etching step, a 45-degree surface is formed, which can be used as a mirror surface. The advantage of this design is that by combining different etching methods, the area coverage rate on the substrate can be further increased.

[0105] Figure 18 shows a component in which a lens arrangement 180 is additionally arranged on the cover substrate 4. This embodiment will be described in more detail in relation to Figure 1.

[0106] Figure 19 shows a schematic diagram of a component arrangement with a 45-degree mirror surface provided on a circumferential spacer 3 (silicon frame). A further element 190 designed as an anisotropically etched silicon component, which similarly has a 45-degree inclined surface 191, is arranged on the carrier substrate 1 before a cap is mounted thereon. Together with the inclined surface 191, in the illustrated embodiment, a light-reflecting surface having a mirror coating 191a is provided.

[0107] FIG. 20 shows a schematic diagram of a component arrangement designed such that the lower opening 200 in the spacer 3 designed as an anisotropically etched silicon component has a chamfer 201 oriented substantially vertically in the illustrated example. On the one hand, this has the advantage that the installation space 1a can be reduced, and thus the overall size of the package can be reduced. On the other hand, the side-emitting component can be arranged closer to the light-reflecting mirror surface. This is advantageous for the impact of the light beam expanded by the possible beam divergence occurring on the provided mirror surface. In this way, the light emitted laterally from the component can be more efficiently guided outside the installation space 1a, and the height of the component can be further reduced. In the present embodiment, the chamfer 201 at the lower opening 200 of the spacer 3 is realized, for example, by a dry etching process. However, the chamfer 201 can also be provided by wet chemical over-etching of the spacer 3, because in the anisotropic etching process, the crystal plane substantially perpendicular to the 100 direction is achieved at the convex edge of the silicon spacer 3.

[0108] FIG. 21 shows a schematic diagram of a component arrangement designed such that the lower opening 210 in the spacer 3 designed as an anisotropically etched silicon component has an undercut 211 with respect to the surface of the spacer 3. This provides the same advantages already described in FIG. 20. The undercut 211 can be achieved, on the one hand, by an appropriate dry etching process as designed in FIG. 20, and on the other hand, by wet chemical anisotropic etching of the back surface of the spacer 3, and the opening, and thus the undercut 211, is defined by the corresponding masking.

[0109] The features disclosed in the above description, claims and drawings can be related to the realization of various embodiments individually or in any combination.

Brief Description of the Drawings

[0110]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7a

Figure 7b

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Claims

1. A carrier substrate, A spacer disposed on the carrier substrate so as to surround an installation space, the spacer having an outlet opening on a surface facing away from the carrier substrate, An optical component disposed in the installation space, A contact connection that conductively connects the optical component to an external contact disposed outside the installation space, A cover substrate disposed on the spacer and covering the outlet opening in a light-transmissive manner, A light reflecting surface formed on an anisotropically etched silicon component and disposed in the installation space as an inclined surface at an angle of approximately 45° with respect to the surface of the carrier substrate facing the installation space, wherein light radiated horizontally on the light reflecting surface can be radiated vertically through the opening and the cover substrate and vice versa, the light reflecting surface having a surface-side mirror coating generated by a dielectric mirror, the anisotropically etched silicon component being manufactured from a single crystal of silicon and having a trapezoidal lower opening and a trapezoidal upper opening limited in one direction of its range in a plan view, a light reflecting surface, A component arrangement comprising the above.

2. The component arrangement according to claim 1, wherein the anisotropically etched silicon component is disposed in the installation space surrounded by the spacer.

3. The component arrangement according to claim 1, wherein the spacer is at least partially formed using the anisotropically etched silicon component.

4. The component arrangement according to claim 3, wherein a first wall surface of the spacer faces the installation space, is disposed outside a region having the light reflecting surface, and is inclined with respect to the vertical direction at a first angle different from 45°.

5. The component arrangement according to claim 4, wherein a second wall surface of the spacer, which is different from the first wall surface, faces the installation space, is disposed outside a region having the light reflecting surface, and is inclined with respect to the vertical direction at a second angle different from the first angle and different from 45°.

6. The component arrangement according to any one of claims 1 to 5, wherein the cover substrate at least partially fills the installation space.

7. The component arrangement according to any one of claims 1 to 6, wherein the optical component has a transverse light outlet / entrance through which light can be emitted / incident horizontally.

8. The component arrangement body according to any one of claims 1 to 7, wherein the optical component is arranged on a submount arranged on the carrier substrate.

9. A step of manufacturing a silicon component anisotropically etched from a silicon single crystal by anisotropic etching, A step of manufacturing the component arrangement body according to any one of claims 1 to 8 using the anisotropically etched silicon component, comprising In the step of manufacturing the anisotropically etched silicon component, the silicon single crystal is tilted by about 9.7° with respect to the 100 crystal direction so that a 111 crystal plane having an inclination of about 45° is formed, and is formed with a lower opening having a trapezoidal shape and an upper opening having a trapezoidal shape limited in one direction within its range in a plan view, In the step of manufacturing the component arrangement body, the light reflecting surface has a surface-side mirror coating generated by a dielectric mirror together with the lower opening and the upper opening having the trapezoidal shape in a plan view, the lower opening and the upper opening having the 111 crystal plane having an inclination of about 45°, and is formed on the component arrangement body, a method of manufacturing a component arrangement body.

10. A package having the component arrangement body according to any one of claims 1 to 8 and a housing in which the component arrangement body is accommodated.

11. The package according to claim 10, wherein, when viewed from above the housing, light emission / incidence is formed substantially at the center in the region of the exit opening.

12. A package arrangement body having a flat arrangement of a plurality of packages according to claim 10 or 11.

13. The method of manufacturing a package according to claim 10 or 11, wherein the package is manufactured by wafer-level packaging.

14. The method of manufacturing a package arrangement body according to claim 12, wherein the package arrangement body is manufactured by wafer-level packaging.

Images