Bonding device

Abstract

To prevent a bonding target from being damaged in a bonding technique using laser beams.SOLUTION: A bonding device is configured to bond a first bonding target and a second bonding target using laser beams and comprises a first stage, a pressurization mechanism, a second stage and a laser beam source. The first stage is a stage having transmissivity with respect to laser beams and is positioned at a back face side of the first bonding target. The pressurization mechanism is a mechanism for applying a pressure to a back face of the first bonding target. The second stage includes a pressure receiving plane where the pressure of the pressurization mechanism is received at a back face side of the second bonding target. The laser beam source irradiates a bonding location of the first bonding target and the second bonding target with laser beams via the first stage. The pressurization mechanism is a mechanism of which a transmission medium of the pressure consists of a gas or a liquid, and applies the pressure to the back face of the first bonding target in a state where the transmission medium is in contact with the back face.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a bonding technique using a laser beam.

Background Art

[0002] As one of the manufacturing techniques for semiconductor devices (such as MEMS), there is a technique for bonding two wafers by utilizing the eutectic reaction of two types of metals. In this technique, a metal layer containing one of the two metals (for example, aluminum (Al) and germanium (Ge)) that cause the eutectic reaction as a main component and a metal layer containing the other metal as a main component are respectively formed on the bonding surfaces of the two wafers. Then, the two wafers are bonded by causing a eutectic reaction at the contact portions of those metal layers. As an example, this technique is used to seal sensors (such as gyro sensors and biosensors) and waveguides in a device.

[0003] In order to cause a eutectic reaction in such a bonding technique, it is necessary to bring the two metal layers into contact without a gap, and it is also necessary to heat the contact portions of those metal layers to the temperature at which the eutectic reaction occurs. Conventionally, the two metal layers have been brought into contact by sandwiching the two wafers, and the contact portions of the two metal layers have been heated by heating the entire two wafers together with the sensor to be sealed (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in the conventional bonding techniques described above, since even the sensor to be sealed is heated, there is a risk that the sensor may be damaged by heat. For this reason, the sensors that can be sealed within the device are limited to those with high heat resistance. In addition, a long time is required for the temperature rise at the bonding location (temperature rise up to the temperature at which the eutectic reaction occurs), and further, after bonding, since it is necessary to gradually relieve the thermal stress of the wafer, a long time is also required for the temperature drop. For this reason, there has been a problem that the time required for one bonding process becomes long.

[0006] As another problem, when the two types of metals described above have different values of the coefficient of linear expansion, there is a risk of distortion occurring at the bonding location of the two metal layers during temperature rise (heating) or temperature drop (cooling). For this reason, in the conventional bonding techniques described above, in order to suppress the occurrence of such distortion, when selecting two types of metals, it is necessary to select those with similar values of the coefficient of linear expansion, and the degree of freedom in selection is significantly limited.

[0007] Therefore, in recent years, a technique of performing local heating targeting the contact location of two metal layers using laser light has been proposed (see Patent Document 2). Specifically, two wafers are sandwiched between a quartz plate having permeability to laser light and another member (such as a chuck), and in that state, laser light is irradiated to the contact location of the two metal layers through the quartz plate.

[0008] According to such a bonding technique using laser light, since the contact location of the two metal layers is locally heated, the thermal influence on the sensor is reduced, and as a result, it becomes possible to seal a sensor with low heat resistance within the device. In addition, since the bonding location of the two metal layers can be intensively heated with laser light, the temperature of the bonding location can be quickly raised to the temperature at which the eutectic reaction occurs, and as a result, it becomes possible to shorten the time required for the bonding process. Such a bonding technique using laser light is effective not only for bonding using the eutectic reaction (eutectic bonding) but also for various bondings that require local heating, such as solder bonding and welding bonding.

[0009] Furthermore, even if the two types of metals described above have different values of linear expansion coefficient and distortion occurs during heating or cooling, the distortion occurs only in the local portion irradiated with the laser light, so it becomes extremely small. As a result, the influence of the distortion on the joint portion of the two metal layers becomes extremely small. Therefore, when selecting two types of metals, it is possible to select those with different values of linear expansion coefficient, increasing the degree of freedom in selection.

[0010] On the other hand, in the bonding technique using laser light, there is a problem that the wafer to be bonded adheres to the quartz plate due to the above-described clamping and heating, making it difficult to peel off from the quartz plate. If the wafer adheres to the quartz plate in this way, there is a risk of the wafer being damaged when peeled off from the quartz plate.

[0011] Therefore, an object of the present invention is to prevent damage to the bonding target in the bonding technique using laser light.

Means for Solving the Problems

[0012] The bonding device according to the present invention is a device for bonding a first bonding target and a second bonding target using laser light, and includes a first stage, a pressurizing mechanism, a second stage, and a laser light source. The first stage is a stage having transparency to laser light and is located on the back side of the first bonding target. The pressurizing mechanism is a mechanism for applying pressure to the back surface of the first bonding target. The second stage has a pressure receiving surface for receiving the pressure of the pressurizing mechanism on the back side of the second bonding target. The laser light source irradiates laser light to the bonding portion of the first bonding target and the second bonding target through the first stage. And the pressurizing mechanism is a mechanism in which the pressure transmission medium is composed of a gas or a liquid, and applies pressure to the back surface in a state where the transmission medium is in contact with the back surface of the first bonding target.

[0013] According to the above bonding device, it becomes possible to directly apply pressure to the back surface of the first bonding target by a pressure transmission medium (gas or liquid). As a result, it becomes possible to apply pressure to the back surface of the first bonding target in a state of being non-contact with the first stage. Therefore, even in the case of laser light irradiation, a situation where the first bonding target adheres to the first stage is avoided.

Effects of the Invention

[0014] According to the present invention, breakage of a bonding target is prevented in a bonding technique using laser light.

Brief Description of the Drawings

[0015]

Figure 1

Figure 2

Figure 3

Figure 4

Modes for Carrying Out the Invention

[0016] [1] Bonding Target FIG. 1 is a conceptual diagram illustrating two objects to be joined 101 and 102 joined by a joining device described later. The objects to be joined 101 and 102 are, for example, semiconductor wafers, and a first metal layer 201 and a second metal layer 202 are respectively formed on their joining surfaces 101a and 102a. Here, the first metal layer 201 is a layer containing one of two types of metals that cause a eutectic reaction as a main component, and the second metal layer 202 is a layer containing the other metal as a main component. Examples of combinations of two types of metals include a combination of aluminum (Al) and germanium (Ge), a combination of copper (Cu) and tin (Sn), a combination of silver (Ag) and tin (Sn), and a combination of indium (In) and tin (Sn). Further, these layers are not particularly limited, but are formed by vacuum deposition (including sputtering and evaporation) or coating of metal on the joining surfaces 101a and 102a.

[0017] FIG. 1 schematically shows a case where the first metal layer 201 is formed over the entire area of the joining surface 101a and the second metal layer 202 is formed over the entire area of the joining surface 102a. However, in the manufacturing process of an actual semiconductor device (such as MEMS), the first metal layer 201 and the second metal layer 202 are patterned into various shapes according to the shape and use of the device. FIGS. 2(A) and (B) are a cross-sectional view and a plan view showing an example of the pattern shapes of the first metal layer 201 and the second metal layer 202. Note that FIG. 2(B) is a plan view of only the second metal layer 202 out of the first metal layer 201 and the second metal layer 202. In this example, the first metal layer 201 and the second metal layer 202 are formed in a rectangular frame shape surrounding each sensor 103 so that each sensor 103 can be sealed within the device. Note that the pattern shapes of the first metal layer 201 and the second metal layer 202 are not limited to the rectangular frame shape, and can be appropriately changed according to the shape and use of the device.

[0018] The bonding device described below bonds these metal layers by utilizing the eutectic reaction (i.e., eutectic bonding using laser light) generated by heating the contact portion between the first metal layer 201 and the second metal layer 202 (the bonding portion between the bonding targets 101 and 102) with laser light, thereby bonding the bonding surfaces 101a and 102a of the two bonding targets 101 and 102 to each other.

[0019] [2] Bonding Device [2-1] First Embodiment FIGS. 3(A) and 3(B) are conceptual diagrams showing the bonding device according to the first embodiment. As shown in these figures, the bonding device of this embodiment includes a chamber mechanism 1, a sealing mechanism 2, a pressurizing mechanism 3, a laser light source 4, and a control unit 5. Hereinafter, the configuration of each part will be specifically described.

[0020] <Chamber Mechanism 1> The chamber mechanism 1 includes a first chamber component 11, a second chamber component 12, and a drive unit 13 that drives at least one of these.

[0021] The first chamber component 11 and the second chamber component 12 are parts that form a sealed space (hereinafter referred to as "chamber 10") for performing the bonding process, and are configured to selectively realize the formation and opening of the chamber 10 by approaching and separating relatively in the vertical direction. More specifically, it is as follows.

[0022] The first chamber component 11 is composed of a first cylindrical portion 111 and a first stage 112 supported without a gap inside the first cylindrical portion 111. The first cylindrical portion 111 is arranged with its central axis direction coinciding with the vertical direction, and the first stage 112 is horizontally supported by the first cylindrical portion 111. Here, the first stage 112 is a stage having transmissivity to laser light and is formed of, for example, quartz.

[0023] The second chamber component 12 includes a second cylindrical portion 121 arranged coaxially with the first cylindrical portion 111 above the first cylindrical portion 111, a second stage 122 supported inside the second cylindrical portion 121 without a gap and capable of moving up and down, and a drive unit 123 for moving the second stage 122 up and down. The upper end of the first cylindrical portion 111 and the lower end of the second cylindrical portion 121 are in contact without a gap, thereby forming a chamber 10 between the first stage 112 and the second stage 122. In FIG. 3(A), a state where the second stage 122 is raised is shown, and in FIG. 3(B), a state where the second stage 122 is lowered is shown.

[0024] In this way, the chamber mechanism 1 is a mechanism capable of forming a chamber 10 between the first stage 112 and the second stage 122.

[0025] The second stage 122 is a stage having a function of chucking the bonding target. Specifically, the second stage 122 is a stage having a suction surface 122a for sucking the back surface 101b of the bonding target 101 or the back surface 102b of the bonding target 102. As an example, the suction surface 122a is constituted by a flat surface in which suction grooves capable of reducing the internal pressure by vacuum suction or the like are formed over the entire area.

[0026] In this embodiment, the two bonding targets 101 and 102 are temporarily bonded, and by sucking the back surface of either one of the bonding targets to the suction surface 122a, they are chucked by the second stage 122. In this embodiment, hereinafter, among the bonding targets 101 and 102 chucked by the second stage 122, the bonding target farther from the second stage 122 is referred to as the "first bonding target", and the bonding target closer to the second stage 122 is referred to as the "second bonding target". In the examples of FIGS. 3(A) and 3(B), since the bonding targets 101 and 102 are chucked by the second stage 122 with the bonding target 102 facing down, the bonding target 102 corresponds to the "first bonding target", and the bonding target 101 corresponds to the "second bonding target". Therefore, the first stage 112 is located on the back side of the first bonding target, and the second stage 122 is located on the back side of the second bonding target.

[0027] Furthermore, when pressure is applied to the back surface of the first object to be joined (in the examples of FIGS. 3(A) and 3(B), the back surface 102b of the object to be joined 102) by the pressing mechanism 3 described later, the second stage 122 receives that pressure on the back surface side of the second object to be joined (in the examples of FIGS. 3(A) and 3(B), the back surface 101b of the object to be joined 101). Specifically, the adsorption surface 122a of the second stage 122 also functions as a pressure receiving surface for receiving the pressure of the pressing mechanism 3.

[0028] The drive unit 13 is a part that relatively approaches and separates the first chamber component 11 and the second chamber component 12 by moving at least one of them in the vertical direction.

[0029] <Sealing mechanism 2> The sealing mechanism 2 is a mechanism that partitions the space in the chamber 10 into a plurality of regions and seals between adjacent regions (see FIG. 3(B)). Specifically, the sealing mechanism 2 partitions the space in the chamber 10 into a first region R1 facing the back surface 102b (the back surface of the first object to be joined) of the object to be joined 102 and a second region R2 adjacent to the first region R1, and seals between these regions. More specifically, it is as follows.

[0030] The sealing mechanism 2 is composed of a flange portion 21 and a sealing portion 22. Here, the flange portion 21 is an annular portion that protrudes from a position above the first stage 112 on the inner surface of the first cylindrical portion 111 (i.e., a position close to the second cylindrical portion 121) toward the central axis of the first cylindrical portion 111, and extends to a position overlapping the peripheral edges of the objects to be joined 101 and 102 chucked by the second stage 122 when viewed from vertically below. And the sealing portion 22 is an annular sealing member (such as an O-ring), and is installed on the upper surface of the tip of the flange portion 21 so as to face the peripheral edges of the objects to be joined 101 and 102 chucked by the second stage 122 over the entire circumference.

[0031] According to such a sealing mechanism 2, when the second stage 122 is lowered, the sealing portion 22 abuts against the peripheral edges of the joining objects 101 and 102 chucked by the second stage 122 from below over the entire circumference. As a result, the peripheral edges of the joining objects 101 and 102 are sandwiched between the suction surface 122a (pressure receiving surface) of the second stage 122 and the sealing portion 22 over the entire circumference. As a result, the space between the back surface 102b (the back surface of the first joining object) of the joining object 102 and the first stage 112 is defined as the first region R1, and the space between the first region R1 and the second region R2 is sealed by the sealing mechanism 2.

[0032] In this embodiment, the vertical width of the first region R1 (that is, the width between the back surface 102b (the back surface of the first joining object) of the joining object 102 and the first stage 112) is set to be larger than the wavelength of the laser light used for joining, and preferably, it is set to be about 10 times or more of that wavelength. The reason for setting it in this way will be described later.

[0033] <Pressurizing mechanism 3> The pressurizing mechanism 3 is a mechanism that applies pressure to the back surface of the first joining object (in the examples of FIGS. 3(A) and 3(B), the back surface 102b of the joining object 102). Specifically, the pressurizing mechanism 3 is a mechanism in which the pressure transmission medium 31 is composed of a gas or a liquid, and pressure is applied to the back surface in a state where the pressure transmission medium 31 is in contact with the back surface of the first joining object. More specifically, it is as follows.

[0034] The pressurizing mechanism 3 can adjust the internal pressure for each region formed by partitioning the inside of the chamber 10 by the sealing mechanism 2, can decompress the inside of each region, and can further pressurize the first region R1 by the pressure transmission medium 31. The pressurization of the first region R1 is realized, for example, by supplying the pressure transmission medium 31 (gas or liquid) to the first region R1 by a compression pump. Then, the pressurizing mechanism 3 applies pressure to the back surface of the first joining object by making the internal pressure of the first region R1 higher than the internal pressure of the second region R2 and utilizing the difference therebetween.

[0035] <Laser light source 4> The laser light source 4 is a part that emits laser light and is disposed below the first stage 112 having transparency to the laser light. Further, the laser light source 4 irradiates the laser light through the first stage 112 toward the bonding targets 101 and 102 held with the first region R1 separated above the first stage 112, and can scan the laser light in the horizontal plane along the pattern shapes of the first metal layer 201 and the second metal layer 202. Furthermore, the laser light source 4 can focus the laser light on the contact portion between the first metal layer 201 and the second metal layer 202 (the bonding portion between the bonding targets 101 and 102).

[0036] <Control unit 5> The control unit 5 is composed of a processing device such as a CPU or a microcomputer, and controls various operating parts (the chamber mechanism 1, the pressurizing mechanism 3, the laser light source 4, etc.) provided in the bonding device. Specifically, it is as follows.

[0037] At the time of executing the bonding process, the control unit 5 first chucks the temporarily bonded bonding targets 101 and 102 to the suction surface 122a of the second stage 122 in a state where the first chamber component 11 and the second chamber component 12 are separated and the chamber 10 is opened. Then, the control unit 5 forms the chamber 10 by bringing the first chamber component 11 and the second chamber component 12 close to each other and combining them (see Fig. 3(A)). At this time, the control unit 5 raises the second stage 122 so that the bonding targets 101 and 102 are in a state of being separated from the seal portion 22 (that is, the seal between the first region R1 and the second region R2 is released).

[0038] Next, the control unit 5 controls the pressurizing mechanism 3 to reduce the internal pressure of the entire chamber 10 until the inside of the chamber 10 becomes a vacuum state. At this time, since the peripheral portions of the joining targets 101 and 102 are not sandwiched between the adsorption surface 122a (pressure receiving surface) of the second stage 122 and the seal portion 22 and are open (that is, open from the seal), the gas flow passing between the joining targets 101 and 102 at the peripheral portion is not blocked. Therefore, if there is a gap between the joining target 101 and the joining target 102, the internal pressure of the gap can be reduced. On the other hand, if the peripheral portions of the joining targets 101 and 102 are sandwiched between the adsorption surface 122a (pressure receiving surface) of the second stage 122 and the seal portion 22 (that is, sealed), the gas flow is blocked there, so even if there is a gap between the joining target 101 and the joining target 102, it becomes difficult to reduce the internal pressure of the gap.

[0039] Thereafter, the control unit 5 lowers the second stage 122 to bring the seal portion 22 into contact with the peripheral portions of the joining targets 101 and 102 chucked by the second stage 122 from below over the entire circumference (see FIG. 3(B)). As a result, the peripheral portions of the joining targets 101 and 102 are sandwiched between the adsorption surface 122a (pressure receiving surface) of the second stage 122 and the seal portion 22 over the entire circumference. As a result, the first region R1 and the second region R2 are formed and sealed between them.

[0040] In this state, the control unit 5 controls the pressurizing mechanism 3 to increase the internal pressure of the first region R1 while maintaining the second region R2 in a vacuum state. As a result, the internal pressure of the first region R1 becomes higher than the internal pressure of the second region R2, and a pressure corresponding to the difference between them is applied to the back surface 102b (the back surface of the first joining target) of the joining target 102. At this time, by changing the internal pressure of the first region R1, the pressure applied to the back surface 102b of the joining target 102 can be changed to a desired value. Note that the internal pressure of the first region R1 may be set to a value lower than the atmospheric pressure, a value approximately equal to the atmospheric pressure, or a value higher than the atmospheric pressure as long as it is higher than the internal pressure of the second region R2.

[0041] After the pressure mechanism 3 pressurizes the back surface 102b (the back surface of the first joining target) of the joining target 102, while maintaining that state, the control unit 5 controls the laser light source 4 to irradiate the contact portion between the first metal layer 201 and the second metal layer 202 (the joining portion between the joining target 101 and the joining target 102) with laser light via the first stage 112. Further, the control unit 5 scans the laser light in the horizontal plane along the pattern shapes of the first metal layer 201 and the second metal layer 202. Thereby, the first metal layer 201 and the second metal layer 202 can be joined by eutectic bonding over the entire regions of the joining targets 101 and 102. In this way, the joining surfaces 101a and 102a of the two joining targets 101 and 102 are joined to each other.

[0042] In such a joining apparatus, the first region R1 is a region filled with the pressure transmission medium 31 (gas or liquid), and the back surface 102b (the back surface of the first joining target) of the joining target 102 is exposed in the first region R1. For this reason, the back surface 102b (the back surface of the first joining target) of the joining target 102 directly contacts the pressure transmission medium 31 (gas or liquid), and thus, it is directly pressed by the transmission medium 31 during pressurization. In this way, according to the above-described joining apparatus, it becomes possible to directly pressurize the back surface 102b (the back surface of the first joining target) of the joining target 102 with the pressure transmission medium 31 (gas or liquid), and as a result, it becomes possible to pressurize the back surface 102b (the back surface of the first joining target) of the joining target 102 in a state of being non-contact with the first stage 112. Therefore, even after the irradiation of the laser light, a situation where the joining target 102 (the first joining target) adheres to the first stage 112 is avoided. Thus, breakage of the joining target is prevented in the joining technique using laser light.

[0043] Also, according to direct pressurization by the pressure transmission medium 31 (gas or liquid), a uniform pressure can always be applied to the back surface 102b (the back surface of the first joining target) of the joining target 102. Therefore, even if the pressure is relatively small, while deforming the joining target 102 (the first joining target) so that there is no gap between the first metal layer 201 and the second metal layer 202, that state can be maintained. Thus, even with a relatively small pressure, the first metal layer 201 and the second metal layer 202 can be brought into contact without a gap over a wide range. Also, since the pressure required for joining thus becomes smaller, the strength required for the first stage 112 accordingly (the strength that can withstand the pressurization during joining) also becomes smaller, and as a result, it becomes possible to make the thickness of the first stage 112 relatively small.

[0044] Furthermore, when using a liquid as the transmission medium 31 and filling the first region R1 with the liquid, it becomes possible to remove the heat generated during the joining process (irradiation with laser light) with the liquid, or to reduce the energy loss of the laser light by reducing the difference in refractive index between the first stage 112 and the first region R1.

[0045] Also, in the present embodiment, as described above, the size of the vertical width of the first region R1 (that is, the width of the space in which the transmission medium 31 is interposed between the back surface 102b (the back surface of the first joining target) of the joining target 102 and the first stage 112) is set to be larger than the wavelength of the laser light used for joining. Therefore, even if there is a foreign object between the back surface 102b (the back surface of the first joining target) of the joining target 102 and the first stage 112 and the size of the foreign object is about the same as or less than the wavelength of the laser light, a gap corresponding to the vertical width of the first region R1 (that is, a gap wider than the wavelength of the laser light used for joining) is secured between the back surface 102b of the joining target 102 and the first stage 112. Thus, during irradiation with the laser light, the generation of interference fringes of the laser light caused by foreign objects and the deformation of the joining target 102 (the first joining target) are prevented.

[0046] Furthermore, the above-described bonding apparatus may further include an alignment mechanism (not shown) that adjusts the positions of the bonding targets 101 and 102 chucked on the second stage 122. As an example, the alignment mechanism can adjust the position of the second stage 122 by adjusting the position of at least one of the first chamber component 11 and the second chamber component 12 in the horizontal plane.

[0047] In the above-described bonding apparatus, the positional relationship between the first stage 112 and the second stage 122 may be appropriately changed to a positional relationship with the top and bottom reversed, and accordingly, the positions of other parts (such as the pressurizing mechanism 3 and the laser light source 4) may also be appropriately changed.

[0048] Also, the configuration of applying pressure to the back surface 102b (the back surface of the first bonding target) of the bonding target 102 using a pressure difference is not limited to the case where the bonding portion between the bonding targets 101 and 102 is heated by laser light, but can also be applied to the case where the bonding portion is heated by another heating means (for example, when heating the entire bonding targets 101 and 102). Therefore, from this embodiment, the above-described configuration using a pressure difference can be extracted as an invention.

[0049] In the above-described bonding apparatus, the pressurizing mechanism 3 is not limited to a mechanism that applies pressure to the back surface of the first bonding target in a state where a gas or a liquid (pressure transmission medium 31) is in contact with the back surface, and may be appropriately changed to one that applies pressure to the back surface of the first bonding target with a diaphragm having permeability to laser light.

[0050] Also, the above-described bonding apparatus is not limited to the main bonding in which all the contact portions between the first metal layer 201 and the second metal layer 202 are bonded by laser light, and may be used for temporary bonding in which only several of the contact portions between the first metal layer 201 and the second metal layer 202 are bonded by laser light. Here, the temporary bonding is a bonding process performed to maintain the positional relationship between the bonding targets 101 and 102 adjusted by an alignment mechanism (not shown) so as not to be disrupted by vibrations generated during transportation.

[0051] [2-2] Second Embodiment Figure 4 is a conceptual diagram showing the bonding apparatus according to the second embodiment. The bonding apparatus of this embodiment is a modification of the bonding apparatus of the first embodiment in which the configurations of the chamber mechanism 1 and the laser light source 4 are as follows.

[0052] In the chamber mechanism 1, the first chamber component 11 does not include the first stage 112. Instead, the first cylindrical portion 111 is formed in a bottomed cylindrical shape. And in this embodiment, the space between the back surface 102b (the back surface of the first bonding target) of the bonding target 102 and the bottom portion 111a of the first cylindrical portion 111 is used as the first region R1.

[0053] Also, the laser light source 4 is provided in the first region R1. For this reason, in this embodiment, the laser light can be directly irradiated onto the bonding portions of the bonding targets 101 and 102 without using a stage such as a quartz plate. Therefore, in this embodiment, energy loss can be reduced.

[0054] The description of the above embodiments should be considered illustrative in all respects and not restrictive. The scope of the present invention is indicated by the claims rather than the above embodiments. Further, the scope of the present invention is intended to include all modifications within the meaning and scope equivalent to the claims.

[0055] For example, the above-described bonding apparatus can be applied not only to bonding using a eutectic reaction (eutectic bonding), but also to various bondings that require local heating, such as soldering, welding, and further diffusion bonding.

[0056] Also, from the above embodiments, as the subject of the invention, not only the above-described bonding apparatus but also a part of the configuration of the bonding apparatus or a bonding method performed using the bonding apparatus may be extracted.

Description of Reference Numerals

[0057] 1 Chamber mechanism 2 Sealing mechanism 3 Pressurizing mechanism 4 Laser light source 5 Control Unit 10 Chamber 11 First Chamber Component 12 Second Chamber Component 13 Driving Unit 21 Flange 22 Sealing Part 31 Transmission Medium R1 First Region R2 Second Region 101, 102 Objects to be Joined 101a, 102a Joining Surfaces 101b, 102b Back Surfaces 103 Sensor 111 First Cylindrical Part 111a Bottom 112 First Stage 121 Second Cylindrical Part 122 Second Stage 122a Adsorbing Surface (Pressure-Receiving Surface) 123 Driving Unit 201 First Metal Layer 202 Second Metal Layer

Claims

1. An apparatus for joining a first joining target and a second joining target using a laser beam, comprising: a stage having permeability to the laser beam, a first stage positioned on the back side of the first joining target; a pressurizing mechanism for applying pressure to the back surface of the first joining target; a second stage having a pressure receiving surface for receiving the pressure of the pressurizing mechanism on the back side of the second joining target; a laser light source for irradiating the joining portion of the first joining target and the second joining target with the laser beam via the first stage; wherein the pressurizing mechanism is a mechanism in which a pressure transmission medium is composed of a gas or a liquid, and the pressure is applied to the back surface of the first joining target while the transmission medium is in contact with the back surface, the joining apparatus.

2. a chamber mechanism capable of forming a chamber between the first stage and the second stage; a sealing mechanism for partitioning the space in the chamber into a plurality of regions and sealing between adjacent regions; wherein further comprising the plurality of regions include a first region facing the back surface of the first joining target and a second region adjacent to the first region; the sealing mechanism has a sealing portion capable of sealing between the first region and the second region, and by sandwiching the peripheral portions of the first joining target and the second joining target between the pressure receiving surface of the second stage, the space between the back surface of the first joining target and the first stage is defined as the first region, and the space between the first region and the second region is sealed; the pressurizing mechanism is capable of adjusting the internal pressure for each region, and by making the internal pressure of the first region higher than the internal pressure of the second region, the difference is utilized to apply pressure to the back surface of the first joining target, the joining apparatus according to claim 1.

3. further comprising a control unit, wherein the control unit lowers the internal pressure of the chamber before sealing between the first region and the second region; then, by controlling the sealing mechanism, seals between the first region and the second region; then, by controlling the pressurizing mechanism, raises the internal pressure of the first region, the joining apparatus according to claim 2.

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