Semiconductor Device

Abstract

To provide a semiconductor device in which a gate insulating film of an off-transistor is hard to suffer an electrostatic breakdown.SOLUTION: A semiconductor device includes an off-transistor 10 in which a gate electrode 3 and a source region 6 of an N-type MOS transistor are connected to a ground terminal and a drain region 5 is connected to an external signal terminal 100b, the gate electrode 3 of the off-transistor 10 being extended over part or all of the drain region 5 in addition to a channel region. A capacitance C2 formed between the gate electrode 3 and the drain region 5 is preferably larger than a capacitance C1 generated between the gate electrode 3 and a ground potential.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a semiconductor device. [Background technology]

[0002] 2. Description of the Related Art Some semiconductor devices are provided with an ESD protection element to protect internal elements from various surges and noises, such as electrostatic discharge (ESD).

[0003] Examples of ESD protection elements include diode elements, bipolar elements, and thyristor elements that are formed independently or parasitically. Among these, the so-called "off transistor" is well known, in which the drain of an N-type MOS (Metal-Oxide-Semiconductor) transistor is connected to an external terminal and the gate and source are grounded to be used in the off state. This off transistor has the function of preventing the propagation of electrostatic surges to internal elements and dissipating the surge to the substrate, etc.

[0004] Various proposals have been made for such off-transistors. For example, an off-transistor connected to an RC timer, in which a resistive element and a capacitive element are connected in series, has been proposed for the purpose of improving ESD protection characteristics (see, for example, Patent Document 1).

[0005] Also, well-known models of electrostatic discharge related to the destruction of semiconductor devices include the Human Body Model (HBM) and the Charged Device Model (CDM), which are classified in terms of surge waveform, energy, time, etc.

[0006] The HBM is a model in which an electrically charged human being discharges electricity to a semiconductor device, and a relatively large amount of energy is discharged to the semiconductor device in a period of several tens to several hundreds of nsec. On the other hand, CDM has been attracting more attention than HBM because the automation of manufacturing processes in recent years has reduced the amount of human contact with semiconductor devices. This CDM is a model in which a charged semiconductor device's terminals are discharged by contacting metal parts of the device, jigs, etc., and although the amount of energy is relatively small, it is discharged from the semiconductor device in an extremely short time of several tens to several hundreds of psec.

[0007] This leads to severe transients in CDM, and in off-transistors, a large potential difference between the gate electrode and the drain region can lead to breakdown. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] JP 2012-146899 A Summary of the Invention [Problem to be solved by the invention]

[0009] In view of the above, an object of one aspect of the present invention is to provide a semiconductor device in which the gate insulating film of an off transistor is not easily damaged by electrostatic discharge. [Means for solving the problem]

[0010] The semiconductor device according to an embodiment of the present invention comprises: A semiconductor device having an off-transistor in which a gate electrode and a source region of a MOS transistor are connected to a first power supply terminal or a second power supply terminal and a drain region is connected to an external signal terminal, The off transistor has a gate electrode extending above a channel region and a part or the whole of a drain region, and includes a capacitance forming region between the drain region and the gate electrode extending above the drain region. Effect of the Invention

[0011] According to one aspect of the present invention, it is possible to provide a semiconductor device in which a gate insulating film of an off transistor is not easily damaged by electrostatic discharge. [Brief description of the drawings]

[0012] [Figure 1] FIG. 1 is a circuit diagram showing an off transistor included in the semiconductor device according to the first embodiment. [Diagram 2] FIG. 2 is a schematic plan view showing the off transistor according to the first embodiment. [Diagram 3] FIG. 3 is a schematic plan view of the off transistor shown in FIG. 2 with the gate electrode removed. [Figure 4] FIG. 4 is a schematic cross-sectional view taken along line II shown in FIG. [Diagram 5] FIG. 5 is a schematic plan view showing an off transistor included in the semiconductor device according to the second embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view taken along line II-II in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.

[0014] (First embodiment) FIG. 1 is a circuit diagram showing an off transistor included in the semiconductor device according to the first embodiment. As shown in FIG. 1, the semiconductor device 100 has a first power supply terminal 100a which is a power supply potential, an external signal terminal 100b to which a control signal for turning the semiconductor device 100 on and off is input, a second power supply terminal 100c which is a ground potential, and an off transistor 10. In this embodiment, a control signal for turning on and off the semiconductor device 100 is input to the external signal terminal 100b, but this is not limiting and other signals may be used.

[0015] The off transistor 10 is an N-type MOS transistor in this embodiment, with a drain terminal D connected to an external signal terminal 100b, and a gate terminal G and a source terminal S connected to a second power supply terminal 100c at the ground potential.

[0016] Fig. 2 is a schematic plan view showing an off-transistor according to the first embodiment, Fig. 3 is a schematic plan view showing the off-transistor shown in Fig. 2 with a gate electrode removed, Fig. 4 is a schematic cross-sectional view taken along line II shown in Fig. 2. The semiconductor device is not particularly limited and can be appropriately selected depending on the purpose. For example, a semiconductor device having a function of a regulator, a sensor, a memory, a battery control, or the like can be used.

[0017] As shown in FIG. 4, the off-transistor 10 is formed in an active region A on the surface of a silicon semiconductor substrate, and is formed by structurally combining a well region 1, an isolating oxide film 2, a gate electrode 3, a gate insulating film 4, a drain region 5, a source region 6, and an interlayer insulating film 7. The active region A is electrically isolated from other elements by an element isolation region B.

[0018] The well region 1 is a region in which P-type impurities are implanted into the surface of a silicon semiconductor substrate.

[0019] The isolation oxide film 2 is a LOCOS (LOCal Oxidation of Silicon) film, and is formed on the surface of the silicon semiconductor substrate around the off transistor 10. The element isolation region B is formed by this isolation oxide film 2. The element isolation region B may be formed by using a LOCOS film as the isolation oxide film 2 as in this embodiment, or may be formed by trench isolation (Shallow Trench Isolation: STI).

[0020] The gate electrode 3 is an electrode formed by forming a polysilicon film on a gate insulating film 4 formed on the well region 1 and injecting an N-type impurity into the polysilicon film. The gate electrode 3 is arranged so as to cover not only the well region 1 (so-called channel region) between the drain region 5 and the source region 6, but also a part of the drain region 5 and a part of the source region 6 via the gate insulating film 4. The gate electrode 3 has an opening 3a above the drain region 5 so that the drain region 5 can be electrically connected to a terminal portion arranged on the surface of the semiconductor device via a contact hole by a conductor such as aluminum. An interlayer insulating film 7 is formed on the upper layer of the gate electrode 3.

[0021] The drain region 5 and the source region 6 are regions formed by implanting a high concentration of N-type impurities into the surface of the well region 1 . The N-type impurities in the drain region 5 and the source region 6 are implanted into the periphery of the gate electrode 3 from a direction approximately normal to the surface of the silicon semiconductor substrate by ion implantation or the like, and are diffused to the underside of the gate electrode 3 by heat treatment in the subsequent manufacturing process of the semiconductor device. Therefore, when the silicon semiconductor substrate is viewed in a plan view from the normal direction, the drain region 5 and the source region 6 have portions that are located directly below the outer periphery of the gate electrode 3.

[0022] The drain region 5 is connected to an external signal terminal 100b via a drain terminal D. The source region 6 is connected to a second power supply terminal 100c via a source terminal S and is at the ground potential. The well region 1 is also at the ground potential. As a result, the well region 1, the drain region 5, and the source region 6 are present directly below the gate electrode 3 with the gate insulating film 4 interposed therebetween, and therefore, capacitances are formed respectively.

[0023] Here, since the well region 1 and the source region 6 are at ground potential, the capacitance formed between them and the gate electrode 3 is common. Therefore, as shown in Figures 2 and 3, a capacitance formation region Ca1 having a rectangular shape in a plan view is formed between the gate electrode 3 and the well region 1 and the source region 6. In addition, a capacitance formation region Ca2 having a rectangular shape in a plan view with an opening 3a disposed near the center is formed between the gate electrode 3 and the drain region 5.

[0024] In this way, in the off transistor 10, since the capacitance formation region Ca2 is formed between the gate electrode 3 and the drain region 5, even if a high-speed potential change occurs between the gate and drain due to electrostatic discharge in CDM, the potential of the gate electrode 3 tends to follow the potential of the drain region 5. Therefore, in the off transistor 10, a potential difference is unlikely to occur between the gate electrode 3 and the drain region 5, and the gate insulating film 4 is unlikely to be destroyed.

[0025] Furthermore, if the capacitance C2 due to the capacitance formation region Ca2 is larger than the capacitance C1 due to the capacitance formation region Ca1, that is, if the following equation, C2>C1, is satisfied, the potential of the gate electrode 3 is more likely to follow the potential of the drain region 5 than the ground potential. As a result, in the off transistor 10, a potential difference is less likely to occur between the gate electrode 3 and the drain region 5, and breakdown of the gate insulating film 4 can be further suppressed.

[0026] Specifically, in the case of a general transistor, the length (L1+L1+L1) of the gate electrode 3 is 3 μm, the width W of the gate electrode 3 is 100 μm, the diffusion length of the drain region 5 and the source region 6 below the gate electrode 3 is L1 (i.e., 1 μm), and the gate electrode 3 is not extended. In this case, the area ratio of the capacitance formation region Ca1 to the capacitance formation region Ca2 is (2 μm×100 μm×film thickness of the gate insulating film 4):(1 μm×100 μm×film thickness of the gate insulating film 4), which is found to be 2:1. In this case, the potential of the gate electrode 3 is more likely to follow the ground potential than the potential of the drain region 5.

[0027] Therefore, in the off transistor 10 of this embodiment, as shown in FIG. 2, the area of ​​the capacitance formation region Ca2 is more than twice that of the capacitance formation region Ca1, so that the potential of the gate electrode 3 can easily follow the potential of the drain region 5, making it less likely that a potential difference will occur between the gate electrode 3 and the drain region 5, and thus further suppressing the breakdown of the gate insulating film 4.

[0028] If it is not necessary to extend the drain region 5 to the portion in contact with the element isolation region B, the width of the gate electrode 3 may be increased to separate the element isolation region B and the drain region 5 from each other. Also, a high-voltage structure may be formed by intentionally separating the drain region 5 from a region having a higher P-type impurity concentration than the well region 1 that serves as a channel stopper formed under the element isolation region B so as to avoid contact between the drain region 5. This makes it possible to greatly increase the capacitance formation region Ca2 between the gate electrode 3 and the drain region 5.

[0029] Second Embodiment Fig. 5 is a schematic plan view showing an off-transistor included in the semiconductor device according to the second embodiment, and Fig. 6 is a schematic cross-sectional view taken along line II-II in Fig. 5. 5 and 6, the second embodiment is similar to the first embodiment, except that the shape of the opening 3a in the first embodiment when viewed from above is changed from a rectangular shape to a comb-shaped opening 8a. Therefore, the same components as those in the first embodiment described in FIGS. 2 to 4 are denoted by the same reference numerals and will not be described.

[0030] In the second embodiment, by forming the opening 8a in a comb shape, the area of ​​the capacitance formation region Ca3 formed between the gate electrode 8 and the drain region 5 can be made larger than the area of ​​the capacitance formation region Ca1, as compared to the first embodiment. This makes it easier for the potential of the gate electrode 8 to follow the potential of the drain region 5 than in the first embodiment, making it more difficult for a potential difference to occur between the gate electrode 3 and the drain region 5, and thus making it possible to further suppress breakdown of the gate insulating film 4. Furthermore, the comb-shaped opening 8a is advantageous in that impurities can be easily implanted into the surface of the well region 1 when the drain region 5 and the source region 6 are formed.

[0031] In the second embodiment, the opening has two recesses in the gate electrode in the X direction, but the number, direction, width, etc. of the recesses can be arbitrarily set. That is, the shape of the opening when viewed from above is preferably a rectangular shape with a recess in part from the viewpoint of increasing the area of ​​the capacitance forming region Ca3. The recess may be provided so that the corners of the rectangular opening are chipped.

[0032] As described above, in a semiconductor device having an off transistor in which the gate and source of an N-type MOS transistor are grounded, the gate electrode of the off transistor extends above a part or all of the drain region in addition to the channel region. This makes it easier for the potential of the gate electrode of the off transistor to follow the potential of the drain region 5, making it difficult for a potential difference to occur between the gate electrode and the drain region, and thus making it possible to suppress breakdown of the gate insulating film.

[0033] Although the embodiments of the present invention have been described in detail above, the present invention is not limited to these embodiments, and includes designs within the scope of the present invention that do not depart from the gist of the present invention.

[0034] In the first and second embodiments, an opening is provided in the gate electrode to enable electrical connection from the drain region to a terminal portion located on the surface of the semiconductor device via a contact hole, but an opening does not have to be provided if connection is possible via another path.

[0035] In the first and second embodiments, the off transistor is N-type and the well region is P-type, but the present invention is not limited to this, and the off transistor may be P-type and the well region may be N-type. In this case, the gate electrode and source region of the off transistor are connected to the first power supply terminal, and the gate electrode is extended above the channel region as well as a part or all of the source region.

[0036] Although the external signal terminals described above are terminals to which external signals are input, it goes without saying that the same applies to any terminal to which static electricity is applied. For example, the terminal to which static electricity is applied may be a power supply terminal to which a power supply voltage such as a first power supply or a second power supply is input. [Explanation of symbols]

[0037] 1 Well Area 2 Separation oxide film 3,8 Gate electrode 3a,8a opening 4 Gate insulating film 5 Drain region 6 Source Area 10 Off Transistor 100 Semiconductor device 100a First power terminal 100b External signal terminal 100c Second power terminal A Active Area B Element isolation area Ca1 (between the gate electrode and the well region and source region) Capacitance forming region Ca2 (between the gate electrode and the drain region) Capacitance forming region

Claims

1. A semiconductor device having an off transistor in which a gate electrode and a source region of a MOS transistor are grounded and a drain region is connected to an external signal terminal, The off transistor has the drain region and the source region formed in a well region at a ground potential, and the gate electrode extends above the drain region in addition to the channel region; a capacitance formed between said gate electrode and said drain region being larger than capacitances formed between said gate electrode and said well region and between said gate electrode and said source region;

2. 2. The semiconductor device according to claim 1, wherein the gate electrode has an opening at a location covering the drain region.

3. The semiconductor device according to claim 2 , wherein the opening has a rectangular shape in a plan view.

4. The semiconductor device according to claim 3 , wherein the opening has a rectangular shape in plan view, the opening having a recess in part of the rectangular shape.

5. The semiconductor device according to claim 2 , wherein the opening has a comb-like shape in a plan view.

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