Semiconductor device and method of manufacturing the same

The semiconductor device configuration addresses the high manufacturing cost issue by simplifying photolithography processes and integrating masks, achieving cost reduction without compromising performance.

JP7689930B2Active Publication Date: 2025-06-09MITSUBISHI ELECTRIC CORP
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Patent Information

Application Number
JP2022040353
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-03-15
Publication Date
2025-06-09
Estimated Expiration
2042-03-15

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Abstract

To provide a semiconductor device capable of suppressing a manufacturing cost and a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor substrate of a first conductivity type in which a cell region, a ballast resistance region being an outer edge region of the cell region, and a termination region surrounding the ballast resistance region are defined; a first insulation film arranged on a surface of the semiconductor substrate and including a first opening in the cell region and at least one second opening in the ballast resistance region; a second insulation film filled in the second opening; a first impurity layer of a second conductivity type arranged on a surface below the first opening in the semiconductor substrate; a second impurity layer of the second conductivity type arranged on a surface below the second opening in the semiconductor substrate; and a conductive film arranged over the termination region from the surface of the first opening of the semiconductor substrate.SELECTED DRAWING: Figure 14
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Citation Information

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