Negative-type i-line photoresist composition for improving the step between Center and Edge and improving LER, and negative-type i-line photoresist composition for improving process margin

Abstract

The present invention provides a negative I-line photoresist composition that exhibits superior process margins compared to conventional negative I-line photoresists, and aims to improve the problem of central recession during pattern formation in the case of contact hole patterns. The present invention relates to a negative I-line photoresist composition comprising a polymer resin; a compound represented by the following Chemical Formula 1; a crosslinking agent; a photoacid generator; an acid diffusion inhibitor; and a solvent, which improves the step between the center and edge, which is the central recession during the pattern formation process in semiconductor processes, and improves LER (Line and Edge Roughness).

Description

Technical Field

[0001] The present invention relates to a negative-type photoresist composition for I-line with excellent process margin. More specifically, it relates to a negative-type photoresist composition for I-line for improving the step between Center and Edge in the process margin and improving LER (Line and Edge Roughness).

Background Art

[0002] In recent years, with the development of semiconductor manufacturing process technology, as miniaturization and high integration of semiconductor devices are required, technologies for realizing ultra-fine patterns having a line width of several tens of nm or less have been demanded. The progress of technologies for forming such ultra-fine patterns has been made by light sources having a smaller wavelength, development of process technologies using the light sources, development of photoresists suitable for the light sources, and the like. In photolithography for forming various patterns, a photoresist is used. A photoresist means a photosensitive resin whose solubility in a developer changes by the action of light and an image corresponding to an exposure pattern can be obtained. As the photoresist pattern forming method, there are a method using a negative-type developer (NTD, Negative Tone Development) and a method using a positive-type developer (PTD, Positive Tone Development). The pattern forming method using the negative-type developer is a method of forming a pattern by selectively dissolving and removing a non-exposed area with the negative-type developer, and the pattern forming method using the positive-type developer is a method of forming a pattern by selectively dissolving and removing an exposed area with the positive-type developer. When comparing the pattern formation method using the negative-type developer with the pattern formation method using the positive-type developer, in contact hole patterns and trench patterns that are difficult to form due to insufficient exposure dose, by realizing an inverted pattern, it is easier to form a pattern when realizing the same pattern. Since an organic solvent is used as the developer for removing the unexposed portion, a photoresist pattern can be formed more effectively. Also, in the case of a contact hole pattern using a negative-type photoresist, a problem occurs in that there is insufficient margin when applying it to some CIS Devices and other processes due to the phenomenon that the central portion is recessed during pattern formation, which also affects the yield. On the other hand, generally, a photolithography process using a photoresist composition includes a process of coating a photoresist on a wafer, a soft baking process of heating the coated photoresist to evaporate the solvent, an imaging process using a light source that has passed through a photomask, a process of forming a pattern by the difference in solubility between the exposed portion and the unexposed portion using a developer, and a process of etching this to complete a circuit. The photoresist composition is composed of a photosensitizer (Photo Acid Generator) that generates an acid upon irradiation with an excimer laser, a base resin, and other additives. The base resin has a structure with a hydroxyl group in a phenol structure, and a polystyrene polymer, a cresol polymer, and a novolak polymer are basically used. Any photosensitizer can be used as long as it can generate an acid (H + ) at a specific wavelength, and mainly organic acids and inorganic acids such as sulfonium salt-based, sulfonyldiazo-based, benzosulfonyl-based, iodine-based, chlorine-based, and carboxylic acid-based are mainly used. However, the negative-type photoresist manufactured using the above-described composition has drawbacks such as the photosensitizer located at the lower part not generating a sufficient amount of acid (H + ), making it impossible to form a desired shape. In the case of a process of forming a finer pattern, there is a problem that a worse profile is produced. The light sources mainly used in the above-described processes are in the wavelength range of 365 nm to 193 nm using I-line, KrF excimer laser, and ArF excimer laser light sources, and it is known that finer patterns can be formed with shorter wavelengths. Among them, as conventional patents for I-line negative photoresist technology, there are "I-line photoresist composition and fine pattern forming method using the same" in Korean Patent Publication No. 2013-0032071, and "Negative I-line photoresist composition excellent in etching resistance" in Korean Registered Patent Publication No. 10-1598826, etc.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present invention is to provide a negative I-line photoresist composition showing an excellent process margin compared to conventional negative I-line photoresists, and in particular, to provide a negative I-line photoresist composition for improving the step difference between Center and Edge and improving LER (Line and Edge Roughness) among the process margins.

Means for Solving the Problems

[0005] In order to achieve the above object, the present invention provides a negative I-line photoresist composition characterized by containing a compound represented by the following Chemical Formula 1.

Chem.

[0006] In a preferred embodiment of the present invention, the composition is a composition comprising a polymer resin, a compound represented by chemical formula 1, a crosslinking agent, a photoacid generator, an acid diffusion inhibitor, and a solvent. When based on 100 parts by weight of the polymer resin, the specific composition ratio is 5 to 100 parts by weight of the compound represented by chemical formula 1, 7 to 13 parts by weight of the crosslinking agent, 1 to 7 parts by weight of the photoacid generator, 0.3 to 0.9 parts by weight of the acid diffusion inhibitor, and 700 to 1,000 parts by weight of the solvent. In a preferred embodiment of the present invention, the polymer resin is one or more selected from the group consisting of a phenolic polymer resin containing a hydroxyl group, characterized by a weight average molecular weight of 2,000 to 25,000, and a cresol polymer resin, characterized by a weight average molecular weight of 2,000 to 25,000. In a preferred embodiment of the present invention, the monomer of the phenolic polymer resin can be one or more selected from the group consisting of 4-Hydroxy-3-methyl benzoic acid, 4-Hydroxy-2-methyl benzoic acid, 5-Hydroxy-2-methyl benzoic acid, 3,5-Di-tert-butyl-4-hydroxy benzoic acid, 4-Hydroxy-3,5-dimethyl benzoic acid, 4-Hydroxy isophthalic acid, 2,4,6-Hydroxy toluene, 2,4,6-Trihydroxy benzoic acid monohydrate, and 2,4,6-Trihydroxy benzaldehyde, and the monomer of the cresol polymer resin can be one or more selected from the group consisting of o-cresol, p-cresol, m-cresol, Epoxy o-cresol, Epoxy p-cresol, and Epoxy m-cresol.

[0007] In a preferred embodiment of the present invention, the crosslinking agent includes one or more selected from the group consisting of Tris(2,3-epoxypropyl)isocyanurate, Trimethylolmetanetriglycydyleter, Trimethylolpropanetriglycidylether, Hexamethylolmelamine, Trimethylolethanetriglycidylether, Hexamethoxymethylmelamine, Hexamethoxyethylmelamine, Tetramethylol 2,4-diamino-1,3,5-triazine, Tetraethoxymethyl-2,4-diamino-1,3,5-triazine, Tetramethylolglycoluril, Tetramethoxymethylglycoluril, Tetramethoxyethylglycoluril, Tetramethylolurea, Tetramethoxymethylurea, Tetramethoxyethylurea, and Tetramethoxyethyl-2,4-diamino-1,3,5-troazine.

[0008] In a preferred embodiment of the present invention, the photoacid generator is selected from the group consisting of tris(trichloromethyl)triazine, 1,1-bis(p-chlorophenyl)-2,2,2-trichloroethane, tris(methanesulfonyl)benzene, 1,1-bis(chlorophenyl)-2,2,2-trichloroethanol, 2,4,6-tris(tribromomethyl)-s-triazine, 2-methyl-4,6-bis(tribromomethyl)-s-triazine, 2-phenyl-4,6-bis(tribromomethyl)-s-triazine, 2-(4-methoxy-phenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2,4,6-tris(chloromethyl)1,3,5-triazine, triphenylsulfonium triflate, and tribromophenylsulfone, and is characterized by being one or more selected from the group.

[0009] In a preferred embodiment of the present invention, the acid diffusion inhibitor comprises one or more selected from the group consisting of Methyltriamine, ethyltriamine, Dimethylamine, Diethylamine, Trimethylamine, Triethylamine, Tributhylamine, Methanoltriamine, Ethanoltriamine, Dimethanolamine, Diethanolamine, Trimethanolamaine, Triethanolamine, and Tributanolamine.

Advantages of the Invention

[0010] The present invention provides an I-line negative photoresist composition that exhibits an excellent process margin compared to conventional I-line negative photoresists. In particular, it improves the step difference between the Center and the Edge in the process margin and provides an I-line negative photoresist composition for improving LER (Line and Edge Roughness).

Modes for Carrying Out the Invention

[0011] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this invention belongs. In general, the nomenclature used herein is well known and commonly used in the relevant technical field. Throughout this specification, when a part "comprises" a certain component, this means that it can further include other components without excluding other components, unless otherwise stated to the contrary. In the present invention, "Photoresist" is a mixture of a polymer and a photosensitizer. When exposed to light, its chemical properties change, and when exposed to light of a certain wavelength, its solubility in a specific solvent changes. Since there is a difference in the dissolution rate between the exposed part and the unexposed part in the solvent, after a certain dissolution time, the undissolved part remains and a pattern is formed. The "phtolithographic process" in the present invention means that, by utilizing the properties of the above-mentioned photoresist, a mask engraved with a design drawing of a semiconductor is placed between a light source and a photoresist film coated on a silicon wafer. When the light source is turned on, the circuit engraved on the mask is transferred to the photoresist as it is. In the present invention, "line" means a light source having a wavelength range of 365 nm.

[0012] One embodiment of the present invention provides a negative-type photoresist composition for I-line, which is characterized by containing a compound represented by the following Chemical Formula 1.

Chemical formula

[0013] The following Reaction Formula 1 shows, as an example, a substitution reaction between a structure based on 1,1,1-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene and a monomer. [Chemical Formula] In the above Reaction Formula 1, X-R represents a reactive monomer, where X is one or more selected from the group consisting of Cl, NH 2 , Br, OH, and OCH 3 , and R may be one or more selected from the group consisting of acryloyl, allyl, 3-ethoxyacryloyl, dimethysilaneallyl, methylacryl, trans-3-(benzoyl)acryl, 3-(2furyl)acryl, 4-(benzyloxy)benzyl, and 1,4-bisacryloylpiperazine.

[0014] Specific examples of the reactive monomer include acryloyl chloride, aryl chloride, acryloyl bromide, aryl chloride dimethyl silane, acrylic acid, bromoacetophenone, anthraquinone carbonyl chloride, aryl bromide dimethyl silane, chloroacetophenone, chloroanthracene, bromoanthracene, and the like. The compound represented by Chemical Formula 1 obtained by the substitution reaction as described above may have a weight average molecular weight of 550 to 600. The negative photoresist composition for i-line according to the present invention is a composition comprising a polymer resin, a compound represented by Chemical Formula 1, a crosslinking agent, a photoacid generator, an acid diffusion inhibitor, and a solvent. When based on 100 parts by weight of the polymer resin, the specific composition ratio may be 5 to 100 parts by weight of the compound represented by Chemical Formula 1, 7 to 13 parts by weight of the crosslinking agent, 1 to 7 parts by weight of the photoacid generator, 0.3 to 0.9 parts by weight of the acid diffusion inhibitor, and 700 to 1,000 parts by weight of the solvent.

[0015] When based on 100 parts by weight of the polymer resin, the compound represented by Chemical Formula 1 preferably contains 5 to 100 parts by weight. If the compound is used in an amount less than 5 parts by weight, in the case of a contact hole pattern, the improvement of the phenomenon that the central part is recessed during pattern formation (the step between the pattern edge and the center) is insufficient and ineffective, and it is difficult to confirm improvement points in terms of performance aspects such as profile. If the compound is used in an amount exceeding 100 parts by weight, although the improvement of the phenomenon that the central part is recessed during pattern formation (the step between the pattern edge and the center) is possible, it may cause problems such as pattern LER (Line and Edge Roughness) defects and insufficient resolution, so it is not preferable. The polymer resin may be at least one selected from the group consisting of a phenol polymer resin and a cresol polymer resin containing a hydroxyl group.

[0016] More specifically, the monomers of the phenol polymer resin can be one or more selected from the group consisting of 4-hydroxy-3-methyl benzoic acid, 4-hydroxy-2-methyl benzoic acid, 5-hydroxy-2-methyl benzoic acid, 3,5-di-tert-butyl-4-hydroxy benzoic acid, 4-hydroxy-3,5-dimethyl benzoic acid, 4-hydroxy isophthalic acid, 2,4,6-hydroxy toluene, 2,4,6-trihydroxy benzoic acid monohydrate, and 2,4,6-trihydroxy benzaldehyde. The monomers of the cresol polymer resin can be one or more selected from the group consisting of o-cresol, p-cresol, m-cresol, epoxy o-cresol, epoxy p-cresol, and epoxy m-cresol. The polymer resin is a reference for the composition and preferably contains 100 parts by weight. If the polymer resin is used in an amount less than 100 parts by weight, which is the reference amount, there is a problem that high exposure energy is required during patterning and development. If the polymer resin is used in an amount exceeding 100 parts by weight, which is the reference amount, there may be a problem that it is difficult to form a uniform pattern, resulting in residues.

[0017] The crosslinking agent can include one or more selected from the group consisting of Tris(2,3-epoxypropyl)isocyanurate, Trimethylolmetanetriglycydyleter, Trimethyllolphopantriglysideleter, Hexamethylolmelamine, Trimethylolethanetriglycidylether, Hexamethoxymethylmelamine, Hexamethoxyethylmelamine, Tetramethylol 2,4-diamino-1,3,5-triazine, Tetramethoxymethyl-2,4-diamino-1,3,5-triazine, Tetramethylolglycoluril, Tetramethoxymethylglycoluril, Tetramethoxyethylglycoluril, Tetramethylolurea, Tetramethoxymethylurea, Tetramethoxyethylurea, and Tetramethoxyethyl-2,4-diamino-1,3,5-triazine.

[0018] When based on 100 parts by weight of the polymer resin, it is preferable that the crosslinking agent contains 7 to 13 parts by weight of the crosslinking agent. If the crosslinking agent is used in an amount less than 7 parts by weight, pattern formation may become impossible due to insufficient residual film rate or the like. If the crosslinking agent is used in an amount exceeding 13 parts by weight, defects may appear due to the bridge phenomenon between patterns caused by excessive crosslinking. The photoacid generator can include one or more selected from the group consisting of tris(trichloromethyl)triazine, 1,1-bis(p-chlorophenyl)-2,2,2-trichloroethane, tris(methanesulfonyl)benzene, 1,1-bis(chlorophenyl)-2,2,2-trichloroethanol, 2,4,6-tris(tribromomethyl)-s-triazine, 2-methyl-4,6-bis(tribromomethyl)-s-triazine, 2-phenyl-4,6-bis(tribromomethyl)-s-triazine, 2-(4-methoxy-phenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2,4,6-tris(chloromethyl)1,3,5-triazine, triphenylsulfonium triflate, and tribromophenylsulfone.

[0019] When based on 100 parts by weight of the polymer resin, it is preferable that the photoacid generator contains 1 to 7 parts by weight of the photoacid generator. If the photoacid generator is used in an amount less than 1 part by weight, pattern formation becomes impossible due to insufficient crosslinking density. If the photoacid generator is used in an amount exceeding 7 parts by weight, pattern defects such as poor patterns (LWR, LER) on the pattern walls or edge portions may occur due to excessive acid generation. As the acid diffusion inhibitor, it can include one or more selected from the group consisting of methyltriamine, ethyltriamine, dimethylamine, diethylamine, trimethylamine, triethylamine, tributhylamine, methanoltriamine, ethanoltriamine, dimethanolamine, diethanolamine, trimethanolamine, triethanolamine, and tributhanolamine.

[0020] When based on 100 parts by weight of the polymer resin, it is preferably contained in an amount of 0.3 to 0.9 parts by weight. If the acid diffusion inhibitor is used in an amount less than 0.3 parts by weight, pattern defects such as poor patterns (LWR, LER) on the pattern walls or edge portions may occur due to excessive acid generation. If the acid diffusion inhibitor is used in an amount exceeding 0.9 parts by weight, there is a problem that pattern formation may become impossible in some cases. On the one hand, the negative-type photoresist composition for I-line of the present invention can be used at 1,000 Å to 100,000 Å depending on the type and amount of the solvent used. The solvent in the negative-type photoresist composition for I-line can be used after adding 700 to 1,000 parts by weight of the solvent to other composition components and dissolving them based on 100 parts by weight of the polymer resin. As the solvent, one or more selected from the group consisting of Ethyleneglycolmonomethylether, Ethyleneglycolmonoethylether, Methylcellosolveacetate, Ethylcellosolveacetate, Diethyleneglycolmonomethylether, Diethyleneglycolmonoethylether, Propyleneglycolmethyletheracetate, Propyleneglycolpropyletheracetate, Diethyleneglycoldimethylether, Ethyllactate, Toluene, Xylene, Methylethylketone, Cyclohexanone, 2-heptanone, 3-heptanone and 4-heptanone can be used.

[0021] As described above, the negative-type photoresist composition for I-line provided by the present invention comprises a compound represented by Chemical Formula 1, thereby providing a photoresist composition suitable for use in semiconductor manufacturing processes. Even with an I-line (365 nm) exposure light source, the margin is improved by minimizing the step difference between the Pattern Edge and the Center, and a more vertical profile can be achieved.

[0022] [Examples] Hereinafter, the present invention will be described in more detail by way of examples. These examples are merely for illustrative purposes of the present invention, and it will be apparent to those with ordinary knowledge in the art that the scope of the present invention is not to be construed as being limited by these examples. Replacement Reaction Example 1 61.2 g of 1,1,1-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene, 74.5 g of triethylamine, and 250 ml of anhydrous tetrahydrofuran were added to a 500-ml three-necked round-bottom flask equipped with an argon reflux apparatus, and stirred using a magnetic bar. After stirring for 10 minutes under an argon atmosphere, 36.2 g of acryloyl chloride was slowly added dropwise over 10 minutes using a dropping funnel, and after stirring at room temperature for 2 hours, the resulting reaction product was filtered and then washed twice with water. The filtered product was completely dissolved in 150 ml of chloroform and then purified 5 times using a 500-ml separatory funnel. Finally, the product dissolved in chloroform was further purified by column chromatography using a solvent with a 1:1 ratio of methylene chloride to hexane to remove unreacted substances. Finally, a white solid product having a structure represented by Chemical Formula 1 (R: acryloyl) with a weight average molecular weight of 586 was obtained. As a result of gel chromatographic analysis, no unreacted substances were confirmed.

[0023] Example 1 100 g of a phenolic polymer resin having a basic structure of 4-hydroxy-3-methylbenzoic acid with an average molecular weight of 5,000 as a base resin, 5.0 g of the compound presented in Substitution Reaction Example 1, 10 g of tetramethoxymethyl glycoluril as a crosslinking agent, 4 g of 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine as a photoacid generator, and 0.6 g of tributylamine as an acid diffusion inhibitor were used. As a solvent, a mixed solution of 150 g of ethyl lactate and 700 g of propylene glycol methyl ether acetate was used to produce a negative-type photoresist composition for I-line. The produced composition was filtered using a 0.1-μm Teflon syringe filter, and then coated onto a silicon wafer with a Contact Hole Pattern (hole size: 5.0 μm) using a spin coater. After soft baking at 90°C for 90 seconds, an exposure process was performed using a 365-nm light source. After completing the exposure process, a baking process was performed at 110°C for 90 seconds, and then a development process was performed with 2.38% tetramethylammonium hydroxide to form a pattern. Example 2 An experiment was conducted in the same manner as in Example 1, except that 10.0 g of the compound presented in Substitution Reaction Example 1 was used. Example 3 An experiment was conducted in the same manner as in Example 1, except that 20.0 g of the compound presented in Substitution Reaction Example 1 was used. Example 4 An experiment was conducted in the same manner as in Example 1, except that 30.0 g of the compound presented in Substitution Reaction Example 1 was used. Example 5 An experiment was conducted in the same manner as in Example 1, except that 40.0 g of the compound presented in Substitution Reaction Example 1 was used. Example 6 An experiment was conducted in the same manner as in Example 1, except that 50.0 g of the compound presented in Substitution Reaction Example 1 was used. Example 7 An experiment was conducted in the same manner as in Example 1, except that 60.0 g of the compound presented in Substitution Reaction Example 1 was used. Example 8 An experiment was conducted in the same manner as in Example 1, except that 70.0 g of the compound presented in Substitution Reaction Example 1 was used. Example 9 An experiment was conducted in the same manner as in Example 1, except that 80.0 g of the compound presented in Substitution Reaction Example 1 was used. Example 10 An experiment was conducted in the same manner as in Example 1, except that 90.0 g of the compound presented in Substitution Reaction Example 1 was used. Example 11 An experiment was conducted in the same manner as in Example 1, except that 100.0 g of the compound presented in Substitution Reaction Example 1 was used.

[0024] Comparative Example 1 An experiment was conducted in the same manner as in Example 1, except that the compound obtained from Substitution Reaction Example 1 was not added. Comparative Example 2 An experiment was conducted in the same manner as in Example 1, except that 2.5 g of the compound presented in Substitution Reaction Example 1 was used. Comparative Example 3 An experiment was conducted in the same manner as in Example 1, except that 110.0 g of the compound presented in Substitution Reaction Example 1 was used.

[0025] Characteristic Measurement The properties of the negative photoresist composition for i-line manufactured as in the above Examples 1 to 11 and Comparative Examples 1 to 3 were measured. For the Profile characteristics, LER (Line and Edge Roughness) was observed using a CD-SEM (Critical Dimension-Scanning Electron Microscope) capable of observing the pattern linewidth (Critical Dimension) of the wafers obtained in Examples 1 to 11 and Comparative Examples 1 to 3. The height between the Edge and Center of the C / H (Contact Hole) Pattern was used as a reference, and the degree of the step (Gap*?* = Center height - Edge height) was observed and confirmed using an FE-SEM (Field Emission-Scanning Electron Microscope) capable of observing the pattern cross-section (Cross Profile). The results measured in this way are shown in Table 1 below.

Table 1

[0026] Also, as can be seen from the results of Comparative Example 1, when the compound represented by Chemical Formula 1 was not included, there was no improvement effect on the step between the Center and the Edge, and the LER characteristics were also confirmed to be 4 points or less than the normal level, so it could not be adopted. Also, as can be seen from the results of Comparative Example 2, when the compound represented by Chemical Formula 1 was included in an amount of 2.5 g or less, not only was the improvement effect on the step between the Center and the Edge extremely low and thus it could not be adopted, but the LER characteristics were also confirmed to be 4 points or less than the normal level, so it could not be selected. Also, as can be seen from the results of Comparative Example 3, when the compound represented by Chemical Formula 1 was included in an amount of 110 g or more, although it was effective in improving the step between the Center and the Edge, it was confirmed that the LER characteristics were at a poor level of 1 point, so it could not be adopted. As a result, when the compound represented by Chemical Formula 1 was included in the optimal content range presented in Examples 1 to 11, the improvement of the phenomenon that the central portion was recessed during pattern formation (improvement of the step between the Center and the Edge) and the LER characteristics also showed good results. Therefore, it was confirmed that an excellent negative-type photoresist composition for i-line with improved margin during process application could be provided. Any simple modification or change of the present invention can be easily implemented by those having ordinary knowledge in the art, and those modifications or changes can also be regarded as being included in the scope of the present invention.

Claims

【Claim 1】 1) 100 parts by weight of a phenolic polymer resin having a basic structure of 4-hydroxy-3-methylbenzoic acid with an average molecular weight of 5000 as a base resin, 2) 5 to 100 parts by weight of a compound represented by the following Chemical Formula 1 with a molecular weight of 586, 3) 10 parts by weight of tetramethoxymethyl glycoluril as a crosslinking agent, 4) 4 parts by weight of 2-(4-methoxy-phenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine as a photoacid generator, 5) 0.6 parts by weight of tributylamine as an acid diffusion inhibitor, and 6) A composition comprising a mixed solution of 150 parts by weight of ethyl lactate and 700 parts by weight of propylene glycol methyl ether acetate as a solvent, for improving the step difference between Center and Edge during the pattern formation process in the semiconductor process and for improving LER (Line and Edge Roughness). A negative-type photoresist composition for I-line. 【Chemical 1】 (In the formula, R is acryloyl.)

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