Substrate processing apparatus

Abstract

A substrate processing apparatus (1) according to an embodiment of the present disclosure comprises a substrate rotating unit (20) and a cup. The substrate rotating unit (20) holds and rotates a substrate. The cup annularly covers around the substrate being held by the substrate rotating unit (20). The cup includes a cup base portion (53), a first member (55), and a second member (56). The cup base portion (53) surrounds the entire circumference of the substrate rotating unit (20). The first member (55) is detachably attached to an upper end portion of the cup base portion (53), and annularly surrounds the periphery of the substrate. The second member (56) is detachably attached to at least an inner peripheral end of the first member (55), and has a hydrophobic surface (56a).

Description

Technical Field

[0001] The disclosed embodiments relate to a substrate processing apparatus.

Background Art

[0002] Conventionally, a technique for performing liquid processing while rotating a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) is known (see Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of suppressing splashing of a processing liquid from a cup regardless of the surface state of a substrate and the type of the processing liquid.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a substrate rotating unit and a cup. The substrate rotating unit holds and rotates a substrate. The cup annularly covers the periphery of the substrate held by the substrate rotating unit. The cup also has a cup base, a first member, and a second member. The cup base surrounds the entire circumference of the substrate rotating unit. The first member is detachably attached to the upper end of the cup base and annularly surrounds the outer periphery of the substrate. The second member is detachably attached to at least the inner peripheral end of the first member and has a hydrophobic surface.

Effects of the Invention

[0006] According to the present disclosure, splashing of a processing liquid from a cup can be suppressed regardless of the surface state of a substrate and the type of the processing liquid.

Brief Description of the Drawings

[0007]

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DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the substrate processing apparatus disclosed in the present application will be described in detail with reference to the accompanying drawings. It should be noted that the present disclosure is not limited by the following embodiments. Also, the drawings are schematic, and it is necessary to note that the dimensional relationships between elements, the ratios of the elements, etc. may be different from reality. Furthermore, there may be parts where the dimensional relationships and ratios between the drawings are different from each other.

[0009] In addition, in each of the following embodiments, the same parts are denoted by the same reference numerals, and redundant descriptions are omitted. In each of the drawings referred to below, in order to make the description easier to understand, there may be shown a rectangular coordinate system that defines the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other, with the positive Z-axis direction being the vertically upward direction.

[0010] Conventionally, a technique of performing liquid processing while rotating a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) is known. In such liquid processing, the processing liquid scattered from the substrate can be recovered by a cup disposed so as to surround the rotating substrate.

[0011] On the other hand, in the above-described conventional technique, there is room for further improvement in suppressing the splash of the processing liquid from the cup. In particular, when using a specific substrate surface condition or a specific processing liquid, the splash of the processing liquid can be suppressed. However, when the surface condition of the substrate and the type of the processing liquid are variously changed, it has been difficult to suppress the splash of the processing liquid from the cup.

[0012] Therefore, a technique is expected that can solve the above-described problems and suppress the splash of the processing liquid from the cup regardless of the surface condition of the substrate and the type of the processing liquid.

[0013] <Overall Configuration of Substrate Processing Apparatus> First, the configuration of the substrate processing apparatus 1 according to the embodiment will be described with reference to FIGS. 1 and 2. FIGS. 1 and 2 are schematic views showing the configuration of the substrate processing apparatus 1 according to the embodiment.

[0014] As shown in FIGS. 1 and 2, the substrate processing apparatus 1 according to the embodiment includes a processing container 10, a substrate rotating unit 20, an upper surface supply unit 30, a lower surface supply unit 40, a recovery unit 50, and a heating mechanism 70.

[0015] The processing container 10 houses the substrate rotating unit 20, the upper surface supply unit 30, the lower surface supply unit 40, the recovery unit 50, and the heating mechanism 70.

[0016] The substrate rotating unit 20 rotatably holds the wafer W. Specifically, as shown in FIG. 2, the substrate rotating unit 20 includes a vacuum chuck 21, a shaft portion 22, and a driving unit 23. The vacuum chuck 21 adsorbs and holds the wafer W by vacuum suction. The vacuum chuck 21 has a smaller diameter than the wafer W and adsorbs and holds the central portion of the lower surface of the wafer W.

[0017] The shaft portion 22 horizontally supports the vacuum chuck 21 at its tip. The driving unit 23 is connected to the base end portion of the shaft portion 22. The driving unit 23 rotates the shaft portion 22 about the vertical axis and raises and lowers the shaft portion 22 and the vacuum chuck 21 supported by such a shaft portion 22.

[0018] As shown in FIG. 1, the upper surface supply unit 30 etches the peripheral portion of the upper surface of the wafer W by supplying a processing liquid to the peripheral portion of the upper surface of the wafer W. Thereby, for example, a film formed on the peripheral portion of the upper surface of the wafer W can be removed, or the peripheral portion of the upper surface of the wafer W can be cleaned.

[0019] Note that the peripheral portion of the upper surface of the wafer W refers to an annular region on the upper surface of the wafer W having a width of, for example, about 1 to 5 mm from the end face.

[0020] The upper surface supply unit 30 includes a nozzle arm 31, a nozzle 32, and a moving mechanism 33. The nozzle arm 31 extends in the horizontal direction (here, the Y-axis direction) and supports the nozzle 32 at its tip.

[0021] The nozzle 32 is disposed above the wafer W with its discharge port facing downward and discharges a processing liquid such as a chemical solution or a rinse liquid onto the upper surface of the wafer W. As the chemical solution, for example, hydrofluoric acid (HF), diluted hydrofluoric acid (DHF), fluonitric acid, etc. can be used. Note that fluonitric acid is a mixed solution of hydrofluoric acid (HF) and nitric acid (HNO3). Also, as the rinse liquid, for example, DIW (deionized water) can be used.

[0022] The moving mechanism 33 is connected to the base end portion of the nozzle arm 31. The moving mechanism 33 moves the nozzle arm 31 along, for example, the horizontal direction (here, the X-axis direction). Thereby, the moving mechanism 33 can move the nozzle 32 between the processing position above the peripheral edge of the wafer W and the standby position outside such a processing position.

[0023] The lower surface supply unit 40 etches the lower surface peripheral edge of the wafer W by supplying a processing liquid to the lower surface peripheral edge of the wafer W. Thereby, for example, a film formed on the lower surface peripheral edge of the wafer W can be removed, or the lower surface peripheral edge of the wafer W can be cleaned.

[0024] Note that the lower surface peripheral edge of the wafer W is an annular region having a width of, for example, about 1 to 5 mm from the end face on the lower surface of the wafer W.

[0025] As shown in FIG. 2, the lower surface supply unit 40 includes a lower surface nozzle 41, a pipe 42, a valve 43, a flow rate adjuster 44, and a processing liquid supply source 45. The lower surface nozzle 41 is disposed below the wafer W and discharges the processing liquid upward toward the lower surface peripheral edge of the wafer W.

[0026] The pipe 42 connects the lower surface nozzle 41 and the processing liquid supply source 45. The valve 43 is provided in the middle of the pipe 42 and opens and closes the pipe 42. The flow rate adjuster 44 is provided in the middle of the pipe 42 and adjusts the flow rate of the processing liquid flowing through the pipe 42. The processing liquid supply source 45 is, for example, a tank for storing the processing liquid.

[0027] Note that the lower surface supply unit 40 may include a moving mechanism that moves the lower surface nozzle 41 in the horizontal direction. In this case, the lower surface supply unit 40 can move the lower surface nozzle 41 between the processing position below the wafer W and the standby position outside the wafer W.

[0028] The recovery unit 50 is provided so as to surround the outer side of the wafer W, and recovers the droplets of the processing liquid scattered from the wafer W. In the embodiment, in order to receive the droplets scattered from the wafer W without leakage, the outer cup 51 and the inner cup 52 are provided in the recovery unit 50. The outer cup 51 is an example of a cup.

[0029] The outer cup 51 annularly covers the periphery of the wafer W held by the substrate rotation unit 20. The outer cup 51 is provided so as to surround, for example, the side of the wafer W and also so as to surround the upper part outside the wafer W.

[0030] The inner cup 52 is disposed inside the outer cup 51 and below the wafer W held by the substrate rotation unit 20. The inner cup 52 is disposed, for example, outside the heating mechanism 70.

[0031] The outer cup 51 and the inner cup 52 are formed of members with high chemical resistance such as fluororesins such as PTFE (polytetrafluoroethylene) and PFA (perfluoroalkoxyalkane).

[0032] Further, the substrate processing apparatus 1 efficiently recovers the droplets scattered from around the wafer W by sucking the gas around the wafer W from the recovery unit 50 using a pump 80 (see FIG. 3). Details of such a gas suction mechanism will be described later.

[0033] The heating mechanism 70 is disposed below the wafer W and outside the substrate rotation unit 20. Specifically, the heating mechanism 70 is disposed between the substrate rotation unit 20 and the inner cup 52.

[0034] The heating mechanism 70 heats the peripheral edge of the lower surface of the wafer W by supplying a heated fluid to the lower surface of the wafer W held by the substrate rotation unit 20. Specifically, as shown in FIG. 1, the heating mechanism 70 includes a plurality of discharge ports 71 arranged in the circumferential direction of the wafer W, and supplies the heated fluid to the lower surface of the wafer W from these plurality of discharge ports 71.

[0035] Further, the substrate processing apparatus 1 according to the embodiment includes a control device 11. The control device 11 is, for example, a computer and includes a control unit 12 and a storage unit 13.

[0036] The storage unit 13 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk, and stores a program for controlling various processes executed in the substrate processing apparatus 1.

[0037] The control unit 12 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, etc., and various circuits. The control unit 12 controls the operation of the substrate processing apparatus 1 by reading and executing the program stored in the storage unit 13.

[0038] Note that such a program may be recorded on a computer-readable storage medium and installed from the storage medium into the storage unit 13 of the control device 11. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

[0039] <Embodiment> Next, the detailed configuration and operation of the substrate processing apparatus 1 according to the embodiment will be described with reference to FIGS. 3 to 10. FIG. 3 is a cross-sectional view showing the configuration of the recovery unit 50 according to the embodiment, specifically, a cross-sectional view taken along the line A-A shown in FIG. 1.

[0040] As shown in FIG. 3, the recovery unit 50 includes an outer cup 51, an inner cup 52, a liquid receiving space 60, an exhaust hole 61, an exhaust passage 62, an exhaust port 63, and an annular drain 64. Further, a pump 80 is connected to the exhaust port 63.

[0041] Then, the substrate processing apparatus 1 operates such a pump 80 to exhaust the liquid receiving space 60 formed by the outer cup 51 and the inner cup 52 through the exhaust hole 61, the exhaust passage 62, and the exhaust port 63. Thereby, the substrate processing apparatus 1 can exhaust the periphery of the wafer W through the liquid receiving space 60 formed by the outer cup 51 and the inner cup 52.

[0042] The outer cup 51 is provided so as to surround the lateral side outside the wafer W and the upper side outside the wafer W. The outer cup 51 has a cup base portion 53, an upper annular member 54, and an O-ring 57.

[0043] The cup base portion 53 surrounds the entire circumference of the substrate rotating portion 20 at the outermost circumference of the recovery portion 50. The cup base portion 53 rises substantially vertically to a height approximately equal to the upper end portion of the inner cup 52.

[0044] The upper annular member 54 is provided so as to surround the upper side outside the wafer W. The upper annular member 54 is inclined so as to be higher as it goes inward (that is, as it approaches the wafer W) from the upper end portion of the cup base portion 53.

[0045] The O-ring 57 is provided between the upper annular member 54 and the cup base portion 53 and seals the space between the upper annular member 54 and the cup base portion 53. In the present disclosure, the space between the upper annular member 54 and the cup base portion 53 may be sealed by a member other than the O-ring.

[0046] Further, the upper annular member 54 has a first member 55 and a second member 56. The first member 55 is detachably attached to the upper end portion of the cup base portion 53 and annularly surrounds the outer circumference of the wafer W. The inner surface 55a of the first member 55 has hydrophilicity and is inclined along the inclined portion 52a of the inner cup 52 described later. That is, the inner surface 55a of the first member 55 is a hydrophilic surface.

[0047] In the present disclosure, "the surface has hydrophilicity" means that the contact angle of the treatment liquid adhering to such a surface is 90° or less, and "the surface has hydrophobicity" means that the contact angle of the treatment liquid adhering to such a surface is 90° or more.

[0048] The second member 56 is detachably attached to at least the inner peripheral end of the first member 55, and the surface 56a is hydrophobic. That is, the surface 56a of the second member 56 is a hydrophobic surface. Further, the second member 56 has a support portion 56b and a return portion 56c.

[0049] The support portion 56b is a portion supported by the first member 55. For example, it is supported at the upper end portion of the first member 55. The return portion 56c bends downward from the inner peripheral end of the support portion 56b with a given width (for example, about 3 (mm)) and extends in a direction approaching the peripheral edge of the wafer W.

[0050] The lower end portion of the return portion 56c is provided at a position that is a given height (for example, about 2 (mm)) higher than the height at which the wafer W is located. Further, the lower end portion of the return portion 56c is provided on the outer peripheral side by a given distance (for example, about 5 (mm)) in the horizontal direction with respect to the peripheral edge of the wafer W.

[0051] In this way, by providing a gap of a given size between the peripheral edge of the wafer W and the lower end portion of the return portion 56c, the space where the upper surface of the wafer W is exposed can be connected to the liquid receiving space 60 formed by the outer cup 51 and the inner cup 52.

[0052] Here, in the embodiment, the surface 56a of the second member 56, which is located on the side of the wafer W and to which the treatment liquid scattered from the wafer W directly hits, has hydrophobicity. Thereby, it is possible to suppress the droplets of the treatment liquid adhering to the second member 56 from gathering and growing larger. Therefore, according to the embodiment, it is possible to suppress the treatment liquid from rebounding off the wafer W when the treatment liquid newly scattered from the wafer W collides with this large droplet.

[0053] Furthermore, in the embodiment, the first member 55 and the second member 56 that directly receive the processing liquid scattered from the wafer W are each configured to be detachable from any other adjacent member.

[0054] Thereby, even when the surface state of the wafer W and the type of the processing liquid are variously changed in the substrate processing apparatus 1, by optimizing the surface states of the first member 55 and the second member 56 with respect to the changed various parameters, it is possible to suppress the splashing of the processing liquid onto the wafer W.

[0055] Therefore, according to the embodiment, it is possible to suppress the splashing of the processing liquid from the outer cup 51 regardless of the surface state of the wafer W and the type of the processing liquid.

[0056] Also, in the embodiment, the inner surface 55a of the first member 55 which is an inclined surface is preferably hydrophilic. Thereby, it is possible to suppress the processing liquid scattered from the wafer W and adhering to the inner surface 55a of the first member 55 from remaining on the inner surface 55a to which the processing liquid adheres.

[0057] Therefore, according to the embodiment, since it is possible to suppress the processing liquid remaining on the inner surface 55a from flowing back to the wafer W, it is possible to suppress the contamination of the wafer W by the processing liquid that has flowed back.

[0058] Also, in the embodiment, the inner surface 53a of the cup base 53 is preferably hydrophobic. Thereby, the processing liquid that has reached the inner surface 53a of the cup base 53 can be smoothly flowed to the annular drain 64 located below the inner surface 53a.

[0059] Also, in the embodiment, the second member 56 closest to the wafer W in the outer cup 51 preferably has a return portion 56c. Thereby, since a gap of a given size can be formed between the peripheral edge portion of the wafer W and the outer cup 51, it is possible to smoothly exhaust the periphery of the wafer W through the liquid receiving space 60.

[0060] Furthermore, in the embodiment, since the second member 56 has the return portion 56c, the areas of the first member 55 and the second member 56 close to the peripheral portion of the wafer W can be reduced. Thereby, the amount of the processing liquid adhering to the first member 55 and the second member 56 can be decreased.

[0061] Therefore, according to the embodiment, since it is possible to suppress the processing liquid remaining on the inner surface 55a of the first member 55 and the surface 56a of the second member 56 from flowing back to the wafer W, it is possible to suppress contamination of the wafer W by the flowing-back processing liquid.

[0062] FIG. 4 is a perspective view showing the configuration of the second member 56 according to the embodiment. As shown in FIG. 4, the return portion 56c of the second member 56 according to the embodiment is provided in an annular shape along the peripheral portion of the wafer W.

[0063] And the return portion 56c according to the embodiment has an opening 56d for flowing the processing liquid supplied from the nozzle 32 and scattered toward the first member 55.

[0064] Thereby, it is possible to suppress the processing liquid supplied from the nozzle 32 and scattered from directly hitting the return portion 56c. Therefore, according to the embodiment, it is possible to suppress the splashing back of the processing liquid from the return portion 56c.

[0065] Such an opening 56d may be formed, for example, from the vicinity of the nozzle 32 in the second member 56 to a position where the processing liquid supplied from the nozzle 32 and scattered does not directly hit. Thereby, it is possible to suppress the splashing back of the processing liquid from the return portion 56c and to suppress the backflow of the processing liquid from the inner surface 55a of the first member 55.

[0066] Therefore, according to the embodiment, it is possible to further suppress contamination of the wafer W by the processing liquid scattered from the wafer W.

[0067] FIG. 5 is a perspective view showing the configuration of the first member 55 according to the embodiment. As shown in FIG. 5, a plurality of grooves 55b are provided on the inner surface 55a of the first member 55 according to the embodiment. Such grooves 55b are formed along the direction of the flow in which the processing liquid supplied to the rotating wafer W scatters outward.

[0068] Thereby, the processing liquid adhering to the inner surface 55a of the first member 55 can be smoothly guided into the annular drain 64 by using the swirling flow of the wafer W.

[0069] Furthermore, by providing a plurality of grooves 55b on the inner surface 55a, it is possible to suppress the droplets of the processing liquid adhering to the inner surface 55a from gathering and growing larger. Therefore, according to the embodiment, it is possible to suppress the processing liquid from splashing back onto the wafer W due to the collision of the newly scattered processing liquid from the wafer W against such large droplets.

[0070] Returning to the description of FIG. 3. The inner cup 52 is provided along the inner surface of the outer cup 51 (the inner surface 53a of the cup base 53 and the inner surface 55a of the first member 55) inside the outer cup 51.

[0071] That is, the inner cup 52 has an inclined portion 52a provided along the inner surface 55a of the first member 55 which is an inclined surface, and a vertical portion 52b provided along the inner surface 53a of the cup base 53 which is a vertical surface.

[0072] The inclined portion 52a gradually descends as it goes outward from the vicinity of the peripheral edge of the wafer W. The vertical portion 52b extends in a substantially vertical direction downward from the outer peripheral end of the inclined portion 52a.

[0073] The liquid receiving space 60 is formed between the outer cup 51 and the inner cup 52. The exhaust hole 61 is formed so as to penetrate the inner cup 52. The exhaust passage 62 is formed inside the inner cup 52.

[0074] The exhaust passage 62 is formed, for example, between the inner cup 52 and the wall portion 58 located inside and below the inner cup 52. The exhaust passage 62 and the liquid receiving space 60 are connected by an exhaust hole 61.

[0075] The exhaust port 63 is connected to the exhaust passage 62. The exhaust port 63 is provided, for example, at a predetermined position on the wall portion 58. Note that the exhaust port 63 may be provided at one location on the wall portion 58 or at a plurality of locations. Details of the exhaust duct 100 (see FIG. 10) on the downstream side of the exhaust port 63 will be described later.

[0076] The annular drain 64 is formed between the outer cup 51 and the inner cup 52 (for example, between the lower end of the outer cup 51 and the lower end of the inner cup 52). The annular drain 64 discharges the processing liquid supplied to the wafer W to the outside. Details of the annular drain 64 will be described later.

[0077] Here, in the embodiment, the exhaust hole 61 is formed obliquely downward from the outer surface 52c to the inner surface 52d of the inner cup 52. Thereby, since the flow of the gas from the liquid receiving space 60 toward the exhaust passage 62 can be made smooth, the periphery of the wafer W can be efficiently exhausted.

[0078] Therefore, according to the embodiment, it is possible to suppress the wafer W from being contaminated by mist or the like of the processing liquid staying around the wafer W.

[0079] Also, in the embodiment, the exhaust hole 61 is preferably disposed in the vertical portion 52b of the inner cup 52. Thereby, it is possible to suppress the processing liquid flowing down along the outer surface 52c of the inner cup 52 from flowing into the exhaust hole 61 instead of the annular drain 64.

[0080] Therefore, according to the embodiment, the processing liquid flowing down along the inner cup 52 can be satisfactorily separated.

[0081] FIG. 6 is a cross-sectional view showing the configuration of the annular drain 64 according to the embodiment, and FIG. 7 is a plan view showing the configuration of the annular drain 64 according to the embodiment. As shown in FIG. 7, the annular drain 64 is annular (for example, circular) in plan view.

[0082] Further, a drain port 64a is provided at the bottom surface of a given position in the annular drain 64. Such a drain port 64a is connected to the drain part DR via a drain passage 90.

[0083] Also, in the embodiment, as shown in FIG. 6 and the like, a cleaning liquid nozzle 46 is provided in the lower surface supply part 40. Such a cleaning liquid nozzle 46 is provided near the lower surface nozzle 41 and discharges the cleaning liquid CL downward.

[0084] The cleaning liquid CL discharged from the cleaning liquid nozzle 46 is supplied to the cleaning liquid supply part 64b of the annular drain 64 through a groove part 47 formed in the inner cup 52. The cleaning liquid CL according to the embodiment is, for example, DIW or the like.

[0085] Also, as shown in FIG. 7, since the cleaning liquid nozzle 46 is provided at a position facing the drain port 64a, the cleaning liquid supply part 64b is provided at a position facing the drain port 64a.

[0086] Here, in the embodiment, the drain port 64a is provided at the lowest position in the annular drain 64, and the cleaning liquid supply part 64b is provided at the highest position. And the annular drain 64 is formed so as to gradually become lower as it goes from the cleaning liquid supply part 64b toward the drain port 64a.

[0087] Thereby, the cleaning liquid CL supplied from the cleaning liquid nozzle 46 to the cleaning liquid supply part 64b flows through the entire annular drain 64 and is discharged from the drain port 64a as shown in FIG. 7. That is, in the embodiment, by supplying the cleaning liquid CL from the cleaning liquid nozzle 46 provided at a position facing the drain port 64a toward the cleaning liquid supply part 64b, the entire annular drain 64 can be cleaned well.

[0088] In the embodiment, by operating the cleaning liquid nozzle 46 to clean the annular drain 64, the amount of mist of the processing liquid staying in the liquid receiving space 60 can be reduced. Therefore, according to the embodiment, it is possible to suppress the mist staying in the liquid receiving space 60 from flowing backward and contaminating the wafer W.

[0089] FIG. 8 is a timing chart showing an example of the cleaning process of the annular drain 64 according to the embodiment. As shown in FIG. 8, in the substrate processing apparatus 1 (see FIG. 1), various processes are performed on one wafer W.

[0090] For example, the control unit 12 (see FIG. 1) first performs a transfer process of carrying out the wafer W on which various processes have been completed from the processing container 10 (see FIG. 1) and carrying the next wafer W into the processing container 10 (step S101).

[0091] Next, the control unit 12 performs various liquid processes on the peripheral portion of the wafer W carried into the processing container 10 (step S102). Then, the control unit 12 performs a rinse process on the wafer W subjected to various liquid processes (step S103). Such a rinse process is performed, for example, by supplying DIW to the wafer W from the nozzle 32 and the lower surface nozzle 41.

[0092] Next, the control unit 12 performs a drying process on the wafer W subjected to the rinse process (step S104). Such a drying process is performed, for example, by rotating the wafer W at high speed.

[0093] Finally, the control unit 12 performs a transfer process of carrying out the wafer W on which the above-described processes have been completed from the processing container 10 and carrying the next wafer W into the processing container 10 (step S105).

[0094] Here, in the example of FIG. 8, the control unit 12 performs a cleaning process of the annular drain 64 (step S111) in parallel with the transfer process of the wafer W (steps S101, S105).

[0095] Thus, by performing the cleaning process of the annular drain 64 in parallel with the transfer process of the wafer W, even if the amount of mist of the processing liquid staying in the liquid receiving space 60 temporarily increases during the drain cleaning process, it is possible to suppress the wafer W from being contaminated.

[0096] FIG. 9 is a timing chart showing another example of the cleaning process of the annular drain 64 according to the embodiment. In the example of FIG. 9, the control unit 12 performs the cleaning process of the annular drain 64 (step S121) in parallel with the rinse process of the wafer W (step S103). In the example of FIG. 9, for example, DIW is simultaneously discharged from the nozzle 32, the lower surface nozzle 41, and the cleaning liquid nozzle 46.

[0097] Thus, by performing the cleaning process of the annular drain 64 in parallel with the rinse process of the wafer W, it is not necessary to wait for various processes of the wafer W until the drain cleaning process is completed, so that the overall processing time of the wafer W can be shortened.

[0098] FIG. 10 is a perspective view showing the configuration of the exhaust duct 100 according to the embodiment. In FIG. 10, parts other than the substrate rotating unit 20, the recovery unit 50, the heating mechanism 70, and the exhaust duct 100 are not shown.

[0099] As shown in FIG. 10, the exhaust duct 100 is connected to the exhaust port 63 (see FIG. 3) of the recovery unit 50 and discharges the exhaust in the exhaust passage 62 to the pump 80 (see FIG. 3). The exhaust duct 100 has, in order from the upstream side, a descending portion 101, a horizontal portion 102, and an ascending portion 103.

[0100] The cylindrical descending portion 101 is a portion that is connected to the exhaust port 63 of the recovery unit 50 and extends downward. The box-shaped horizontal portion 102 is connected to the downstream side of the descending portion 101 and is a portion that extends in the horizontal direction and away from the recovery unit 50.

[0101] The cylindrical rising portion 103 is connected to the downstream side of the horizontal portion 102 and extends upward. Further, the rising portion 103 extends above the recovery portion 50. Note that in a plan view, since the downstream side of the horizontal portion 102 extends outside the recovery portion 50, even if the rising portion 103 extends above the recovery portion 50, it does not interfere with the recovery portion 50.

[0102] As described so far, the exhaust duct 100 according to the embodiment may be connected to the lower side of the recovery portion 50 and extend above the recovery portion 50. Thereby, it is possible to suppress the droplets that have reached the exhaust passage 62 from being discharged to the outside through the exhaust duct 100 from the exhaust port 63.

[0103] That is, in the embodiment, the droplets that have reached the exhaust passage 62 can be satisfactorily separated by the exhaust duct 100.

[0104] Further, in the embodiment, a drain passage 104 connected to the drain portion DR may be connected to the bottom surface of the horizontal portion 102. Thereby, since the droplets that have reached the horizontal portion 102 can be discharged to the drain portion DR, the droplets that have reached the horizontal portion 102 can be more satisfactorily separated by the exhaust duct 100.

[0105] Further, in the embodiment, the horizontal portion 102 of the exhaust duct 100 may be box-shaped. Thereby, the exhaust duct 100 can be configured by connecting the descending portion 101 and the rising portion 103, which are linear pipes, to the box-shaped horizontal portion 102. Therefore, according to the embodiment, the manufacturing cost of the exhaust duct 100 can be reduced.

[0106] Further, in the embodiment, an inclined portion 102a may be provided below the portion where the descending portion 101 is connected in the box-shaped horizontal portion 102. Thereby, it is possible to suppress the generation of vortices that occur when the exhaust direction changes from downward to horizontal at the portion where the descending portion 101 is connected.

[0107] Therefore, according to the embodiment, since the pressure loss in the exhaust duct 100 can be further reduced, the flow path resistance of the entire exhaust path connecting from around the wafer W to the pump 80 can be further reduced.

[0108] Further, in the embodiment, in the box-shaped horizontal portion 102, an inclined portion 102b may be provided below the portion connected to the rising portion 103. Thereby, generation of vortex flow generated when the exhaust direction changes from the horizontal direction to the upward direction can be suppressed at the portion connected to the rising portion 103.

[0109] Therefore, according to the embodiment, since the pressure loss in the exhaust duct 100 can be further reduced, the flow path resistance of the entire exhaust path connecting from around the wafer W to the pump 80 can be further reduced.

[0110] In the embodiment, the inner diameter of the rising portion 103 may be substantially equal to the inner diameter of the descending portion 101, or may be larger than the inner diameter of the descending portion 101. In the embodiment, by making the inner diameter of the rising portion 103 larger than the inner diameter of the descending portion 101, the pressure loss in the exhaust duct 100 can be further reduced.

[0111] Further, in the embodiment, the inner dimension of the box-shaped horizontal portion 102 is preferably larger than the inner diameters of the cylindrical descending portion 101 and the rising portion 103. Thereby, the descending portion 101 and the rising portion 103 can be connected to the horizontal portion 102 without problems.

[0112] On the other hand, when the inner dimension of the horizontal portion 102 is too large compared to the inner diameters of the descending portion 101 and the rising portion 103, a large amount of vortex flow is generated due to the sudden expansion and contraction of the cross-sectional area of the flow path at the connection portion between the descending portion 101 and the horizontal portion 102 and at the connection portion between the horizontal portion 102 and the rising portion 103. Therefore, in the embodiment, the cross-sectional area of the horizontal portion 102 is preferably 2 times or less the cross-sectional areas of the descending portion 101 and the rising portion 103.

[0113] <Modification 1> Next, various modifications of the substrate processing apparatus 1 according to the embodiment will be described with reference to FIGS. 11 to 17. FIG. 11 is a cross-sectional view showing the configuration of the upper annular member 54 according to Modification 1 of the embodiment.

[0114] As shown in FIG. 11, in the upper annular member 54 according to Modification 1, the configuration of the second member 56 is different from that of the above-described embodiment. Specifically, in Modification 1, the tip of the return portion 56c in the second member 56 bends further outward.

[0115] Thereby, in Modification 1, droplets of the processing liquid adhering to the tip of the return portion 56c can be moved away from the wafer W. Therefore, according to Modification 1, it is possible to suppress the wafer W from being contaminated by the droplets adhering to the tip of the return portion 56c.

[0116] Further, in Modification 1, the tip of the return portion 56c may cover the inner peripheral end of the first member 55 from below. Since this is the boundary between the inner surface 55a which is a hydrophilic surface and the surface 56a which is a hydrophobic surface, it is possible to suppress the droplets of the processing liquid from scattering to the inner peripheral end of the first member 55 where droplets tend to gather.

[0117] Therefore, according to Modification 1, it is possible to suppress the wafer W from being contaminated by the droplets adhering to the inner peripheral end of the first member 55.

[0118] <Modification 2> FIG. 12 is a cross-sectional view showing the configuration of the upper annular member 54 according to Modification 2 of the embodiment. As shown in FIG. 12, in the upper annular member 54 according to Modification 2, the configuration of the first member 55 is different from that of the above-described embodiment.

[0119] Specifically, in Modification 2, the inner surface 55a of the first member 55 includes a horizontal portion 55a1 and an inclined portion 55a2. The horizontal portion 55a1 is a surface that extends substantially horizontally from the inner surface of the second member 56.

[0120] The inclined portion 55a2 inclines from the outermost periphery of the horizontal portion 55a1 so as to become lower toward the outside. Note that the inclination angle of the inclined portion 55a2 in the second modification is substantially equal to the inclination angle of the inner surface 55a in the embodiment.

[0121] As a result, in the second modification, droplets of the processing liquid adhering to the inner surface 55a of the first member 55 can be moved away from the wafer W. Therefore, according to the second modification, contamination of the wafer W by the droplets adhering to the inner surface 55a can be suppressed.

[0122] <Second Modification> FIG. 13 is a cross-sectional view showing the configuration of the upper annular member 54 according to the third modification of the embodiment. As shown in FIG. 13, the upper annular member 54 according to the third modification is different from that of the second modification in the configuration of the first member 55.

[0123] The horizontal portion 55a1 of the third modification extends further to the outer peripheral side than the horizontal portion of the second modification. Also, the inclination angle of the inclined portion 55a2 in the third modification is larger than the inclination angle of the inclined portion 55a2 in the second modification.

[0124] As a result, in the third modification, droplets of the processing liquid adhering to the inner surface 55a of the first member 55 can be moved further away from the wafer W. Therefore, according to the third modification, contamination of the wafer W by the droplets adhering to the inner surface 55a can be further suppressed.

[0125] <Fourth Modification> FIG. 14 is a cross-sectional view showing the configuration of the recovery portion 50 according to the fourth modification of the embodiment. As shown in FIG. 14, the recovery portion 50 according to the fourth modification is different from that of the above embodiment in the configuration of the upper annular member 54.

[0126] Specifically, in the fourth modification, the protruding length of the return portion 56c of the second member 56 is shorter than that in the embodiment. For example, in the fourth modification, the protruding length of the return portion 56c (see FIG. 3) downward is about 3 (mm).

[0127] As a result, in Modification 4, it is possible to suppress the formation of an excessive liquid receiving space 60 on the back side of the return portion 56c. Therefore, the size of the vortex flow generated in such an excessive liquid receiving space 60 can be reduced. Thus, according to Modification 4, the flow of the gas from the wafer W toward the exhaust hole 61 can be smoothed.

[0128] <Modification 5> FIG. 15 is a cross-sectional view showing the configuration of the recovery portion 50 according to Modification 5 of the embodiment. As shown in FIG. 15, the recovery portion 50 according to Modification 5 is different from the above-described embodiment in the configuration of the upper annular member 54.

[0129] Specifically, in Modification 5, the return portion 56c of the second member 56 does not protrude downward, and the inner surface 55a of the first member 55 extends outward directly from the lower end portion of the return portion 56c.

[0130] As a result, in Modification 5, it is possible to further suppress the formation of an excessive liquid receiving space 60 on the back side of the return portion 56c. Therefore, the size of the vortex flow generated in such an excessive liquid receiving space 60 can be further reduced. Thus, according to Modification 5, the flow of the gas from the wafer W toward the exhaust hole 61 can be further smoothed.

[0131] <Modification 6> FIG. 16 is a cross-sectional view showing the configuration of the recovery portion 50 according to Modification 6 of the embodiment. In the embodiments and various modifications described so far, an example in which the exhaust hole 61 connecting between the liquid receiving space 60 and the exhaust passage 62 is provided in the inner cup 52 has been shown, but the present disclosure is not limited to such an example.

[0132] For example, as shown in FIG. 16, the exhaust hole 61 may be provided in the outer cup 51. Such an exhaust hole 61 has a rising portion 61a, a bent portion 61b, and a descending portion 61c. The rising portion 61a extends upward between the cup base 53 and the upper annular member 54 from the uppermost end of the outermost circumference in the liquid receiving space 60.

[0133] The bent portion 61b bends downward between the cup base 53 and the upper annular member 54 from the downstream end of the rising portion 61a. The descending portion 61c extends downward inside the cup base 53 from the downstream end of the bent portion 61b. Also, the downstream side of the descending portion 61c is connected to the exhaust passage 62.

[0134] Even if the exhaust hole 61 has such a configuration, since both the first member 55 and the second member 56 are configured to be detachable from other members, the surface states of the first member 55 and the second member 56 can be optimized even when the surface state of the wafer W and the type of the processing liquid are variously changed.

[0135] Therefore, according to the sixth modification, regardless of the surface state of the wafer W and the type of the processing liquid, the splashing of the processing liquid from the outer cup 51 can be suppressed.

[0136] Also, in the sixth modification, since the rising portion 61a is provided on the upstream side of the exhaust hole 61, it is possible to suppress the droplets of the processing liquid from entering the exhaust hole 61. Therefore, according to the embodiment, the droplets that have reached the exhaust hole 61 can be well separated by the rising portion 61a.

[0137] <Modification 7> FIG. 17 is a cross-sectional view showing the configuration of the recovery portion 50 according to the seventh modification of the embodiment. In the embodiments and various modifications described so far, an example in which the upper annular member 54 of the outer cup 51 is configured to be detachable has been shown, but the present disclosure is not limited to such an example.

[0138] For example, as shown in FIG. 17, the outer cup 51 may be integrally formed. Such an outer cup 51 has a base portion 51a, an upper annular portion 51b, and a return portion 51c.

[0139] The base portion 51a surrounds the entire circumference of the substrate rotating portion 20 at the outermost circumference of the recovery portion 50. The base portion 51a rises vertically to about the same height as the upper end portion of the inner cup 52.

[0140] The upper annular portion 51b is provided so as to surround the upper outer side of the wafer W. The upper annular portion 51b is inclined so as to be higher from the upper end portion of the base portion 51a as it goes inward (that is, as it approaches the wafer W).

[0141] The return portion 51c bends from the inner peripheral end of the upper annular portion 51b with a given width (for example, about 3 (mm)) and extends in a direction approaching the peripheral edge of the wafer W.

[0142] Even if the outer cup 51 has such a configuration, since the exhaust hole 61 is formed obliquely downward from the outer surface 52c to the inner surface 52d of the inner cup 52, the flow of gas from the liquid receiving space 60 to the exhaust passage 62 can be smoothed.

[0143] Therefore, according to the seventh modification, since the periphery of the wafer W can be efficiently exhausted, it is possible to suppress the wafer W from being contaminated by mist of the processing liquid staying around the wafer W.

[0144] Further, in the seventh modification, similarly to the above-described embodiment, the exhaust hole 61 may be disposed in the vertical portion 52b of the inner cup 52. Thereby, it is possible to suppress the processing liquid flowing down along the outer surface 52c of the inner cup 52 from flowing into the exhaust hole 61 instead of the annular drain 64.

[0145] Therefore, according to the seventh modification, the processing liquid flowing down along the inner cup 52 can be satisfactorily separated.

[0146] <Modification 8> FIG. 18 is a cross-sectional view showing the configuration of the recovery portion 50 according to the eighth modification of the embodiment. In the embodiments and various modifications described so far, an example in which the return portion 56c or the return portion 51c is provided in the outer cup 51 has been shown, but the present disclosure is not limited to such an example.

[0147] For example, as shown in FIG. 18, in the outer cup 51 configured integrally, such an outer cup 51 may be composed of a base portion 51a and an upper annular portion 51b.

[0148] In Modification 8, the inner surface 51d of the outer cup 51 has a horizontal portion 51d1 that extends horizontally outward from the location closest to the wafer W (for example, the inner peripheral edge of the outer cup 51).

[0149] As a result, the swirling flow of the wafer W directed outward from the wafer W can be guided along the horizontal portion 51d1. Therefore, the processing liquid adhering to such a horizontal portion 51d1 can be smoothly induced into the annular drain 64 using the swirling flow of the wafer W.

[0150] Therefore, according to Modification 8, since it is possible to suppress the backflow of the processing liquid remaining on the horizontal portion 51d1 to the wafer W, it is possible to suppress the contamination of the wafer W by the backflowed processing liquid.

[0151] FIGS. 19 and 20 are perspective views showing the configuration of the cover 59 according to Modification 8 of the embodiment. Note that FIG. 19 is a perspective view when the nozzle 32 is viewed from the inside, and FIG. 20 is a perspective view when the nozzle 32 is viewed from above. FIGS. 19 and 20 show the case where the nozzle 32 is at the processing position above the peripheral edge of the wafer W.

[0152] As shown in FIGS. 19 and 20, in Modification 8, the nozzle 32 has a cover 59. The cover 59 is disposed around the nozzle 32. The cover 59 has side wall portions 59a, 59b, 59c, an upper wall portion 59d, and a protruding portion 59e.

[0153] The side wall portions 59a, 59b, 59c are respectively disposed close to the side portions of the nozzle 32 and extend in the vertical direction. The side wall portion 59a is disposed inside the nozzle 32 when viewed from the center of the substrate rotating portion 20. The side wall portion 59b is disposed outside the nozzle 32 when viewed from the center of the substrate rotating portion 20. The side wall portion 59c is provided at a position connecting the side wall portion 59a and the side wall portion 59b.

[0154] The upper wall portion 59d is disposed close to the upper side of the nozzle 32 and extends in the horizontal direction. The upper wall portion 59d is disposed at a position connecting the side wall portion 59a and the side wall portion 59b above the nozzle 32. The protruding portion 59e is disposed outside the side wall portion 59b and extends in the horizontal direction. That is, the protruding portion 59e protrudes horizontally outward from the outer surface of the side wall portion 59b.

[0155] Also, in Modification 8, the upper annular portion 51b of the outer cup 51 has openings 51e and 51f. The opening 51e allows the processing liquid supplied from the nozzle 32 and scattered to flow toward the liquid receiving space 60 (see FIG. 18).

[0156] Thereby, it is possible to suppress the processing liquid supplied from the nozzle 32 and scattered from directly hitting the inner peripheral end of the outer cup 51. Therefore, according to Modification 8, it is possible to suppress the splashing back of the processing liquid from the inner peripheral end of the outer cup 51.

[0157] Such an opening 51e may be formed, for example, from the vicinity of the nozzle 32 at the inner peripheral end of the outer cup 51 to a position where the processing liquid supplied from the nozzle 32 and scattered does not directly hit. Thereby, it is possible to suppress the splashing back of the processing liquid from the inner peripheral end of the outer cup 51 and to suppress the backflow of the processing liquid from the inner surface 51d (see FIG. 18) of the outer cup 51.

[0158] Therefore, according to Modification 8, it is possible to further suppress the contamination of the wafer W by the processing liquid scattered from the wafer W.

[0159] The opening 51f is formed to enable the nozzle 32 to move between the processing position and the standby position. That is, when the nozzle 32 is in the standby position, the nozzle 32 is accommodated in the opening 51f. On the other hand, when the nozzle 32 is in the processing position, the nozzle 32 is located inside the opening 51f.

[0160] Here, in Modification 8, as shown in FIG. 19, when the nozzle 32 is at the processing position, at least a part of the opening 51f may be blocked by the side wall portion 59b. Thereby, when the nozzle 32 is at the processing position, since the opening area of the opening 51f can be reduced, the gap area between the wafer W and the outer cup 51 can be reduced.

[0161] That is, in Modification 8, during the liquid treatment of the wafer W, since the flow velocity of the swirling flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, it is possible to suppress the mist of the processing liquid remaining on the inner surface 51d or the processing liquid staying in the liquid receiving space 60 from flowing back to the wafer W. Therefore, according to Modification 8, it is possible to suppress the contamination of the wafer W by the flowing-back processing liquid.

[0162] Also, in Modification 8, as shown in FIG. 20, when the nozzle 32 is at the processing position, at least a part of the opening 51f may be blocked by the protruding portion 59e. Thereby, when the nozzle 32 is at the processing position, since the opening area of the opening 51f can be reduced, the gap area between the wafer W and the outer cup 51 can be reduced.

[0163] That is, in Modification 8, during the liquid treatment of the wafer W, since the flow velocity of the swirling flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, it is possible to suppress the mist of the processing liquid remaining on the inner surface 51d or the processing liquid staying in the liquid receiving space 60 from flowing back to the wafer W. Therefore, according to Modification 8, it is possible to suppress the contamination of the wafer W by the flowing-back processing liquid.

[0164] Also, in Modification 8, as shown in FIG. 20, a slit 59f may be provided between the protruding portion 59e and the side wall portion 59b. Thereby, a downward flow from the slit 59f can be formed in the space formed below the protruding portion 59e.

[0165] Therefore, according to Modification 8, since it is possible to suppress the stagnation of the space formed below the protruding portion 59e, it is possible to suppress the contamination of the wafer W by the mist of the processing liquid staying in such a space.

[0166] <Modification 9> FIGS. 21 and 22 are perspective views showing the configuration of the cover 59 according to Modification 9 of the embodiment. Note that FIG. 21 is a perspective view when the nozzle 32 is viewed from the inside, and FIG. 22 is a perspective view when the nozzle 32 is viewed from above. Further, FIGS. 21 and 22 show the case where the nozzle 32 is at the processing position above the peripheral portion of the wafer W.

[0167] As shown in FIGS. 21 and 22, in Modification 9, compared with Modification 8 described above, the areas of the side wall portion 59a and the side wall portion 59c are smaller. Even in this case, as in Modification 8 described above, when the nozzle 32 is at the processing position, at least a part of the opening 51f is blocked by the side wall portion 59b, so that the gap area between the wafer W and the outer cup 51 can be reduced.

[0168] That is, in Modification 9, during the liquid processing of the wafer W, the flow velocity of the swirling flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, so that the processing liquid remaining on the inner surface 51d and the mist of the processing liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to Modification 9, it is possible to suppress the contamination of the wafer W by the flowing-back processing liquid.

[0169] Further, in Modification 9, as in Modification 8 described above, when the nozzle 32 is at the processing position, at least a part of the opening 51f may be blocked by the protruding portion 59e. Thereby, when the nozzle 32 is at the processing position, the opening area of the opening 51f can be reduced, so that the gap area between the wafer W and the outer cup 51 can be reduced.

[0170] That is, in Modification 9, during the liquid treatment of the wafer W, the flow velocity of the swirling flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51. Therefore, it is possible to suppress the backflow of the processing liquid remaining on the inner surface 51d or the mist of the processing liquid staying in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 9, it is possible to suppress the contamination of the wafer W by the backflowed processing liquid.

[0171] Further, in Modification 9, similar to Modification 8 described above, it is preferable that a slit 59f is provided between the protruding portion 59e and the side wall portion 59b. Thereby, a downward flow from the slit 59f can be formed in the space formed below the protruding portion 59e.

[0172] Therefore, according to Modification 9, it is possible to suppress the stagnation of the space formed below the protruding portion 59e, and thus it is possible to suppress the contamination of the wafer W by the mist of the processing liquid staying in such a space.

[0173] <Modification 10> FIGS. 23 and 24 are perspective views showing the configuration of the cover 59 according to Modification 10 of the embodiment. Note that FIG. 23 is a perspective view when the nozzle 32 is viewed from the inside, and FIG. 24 is a perspective view when the nozzle 32 is viewed from above. Further, FIGS. 23 and 24 show the case where the nozzle 32 is at the processing position above the peripheral edge of the wafer W.

[0174] As shown in FIGS. 23 and 24, in Modification 10, the configurations of the side wall portion 59a and the side wall portion 59b are different from those in Modification 8 described above. Specifically, in Modification 10, when the nozzle 32 is in the standby position instead of the processing position, at least a part of the opening 51f is blocked by the side wall portion 59a.

[0175] Thereby, when the nozzle 32 is in the standby position, the opening area of the opening 51f can be reduced, so that the gap area between the wafer W and the outer cup 51 can be reduced.

[0176] That is, in Modification 10, during the standby of the nozzle 32, the flow velocity of the swirling flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, so that it is possible to suppress the backflow of the processing liquid remaining on the inner surface 51d or the mist of the processing liquid staying in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 10, it is possible to suppress the contamination of the wafer W by the backflowed processing liquid.

[0177] Further, in Modification 10, similar to Modification 8 described above, when the nozzle 32 is at the processing position, at least a part of the opening 51f may be blocked by the protruding portion 59e. Thereby, when the nozzle 32 is at the processing position, the opening area of the opening 51f can be reduced, so that the gap area between the wafer W and the outer cup 51 can be reduced.

[0178] That is, in Modification 10, during the liquid processing of the wafer W, the flow velocity of the swirling flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, so that it is possible to suppress the backflow of the processing liquid remaining on the inner surface 51d or the mist of the processing liquid staying in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 10, it is possible to suppress the contamination of the wafer W by the backflowed processing liquid.

[0179] Further, in Modification 10, similar to Modification 8 described above, a slit 59f may be provided between the protruding portion 59e and the side wall portion 59b. Thereby, a downward flow from the slit 59f can be formed in the space formed below the protruding portion 59e.

[0180] Therefore, according to Modification 10, it is possible to suppress the stagnation of the space formed below the protruding portion 59e, so that it is possible to suppress the contamination of the wafer W by the mist of the processing liquid staying in such a space.

[0181] <Modification 11> FIG. 25 and FIG. 26 are perspective views showing the configuration of the cover 59 according to Modification 11 of the embodiment. Note that FIG. 25 is a perspective view when the nozzle 32 is viewed from the inside, and FIG. 26 is a perspective view when the nozzle 32 is viewed from above. Also, FIGS. 25 and 26 show the case where the nozzle 32 is at the processing position above the peripheral portion of the wafer W.

[0182] As shown in FIGS. 25 and 26, in Modification 11, the configurations of the side wall portion 59a and the side wall portion 59b are different from those of Modification 8 and Modification 10 described above. Specifically, in Modification 11, since the areas of the side wall portion 59a and the side wall portion 59b are small, the side wall portions 59a and 59b cannot entirely block the opening 51f.

[0183] Even with this, when the nozzle 32 is at the processing position or the standby position, the opening area of the opening 51f can be reduced to some extent, so that the gap area between the wafer W and the outer cup 51 can be reduced.

[0184] That is, in Modification 11, in the gap between the wafer W and the outer cup 51, the flow velocity of the swirling flow of the wafer W can be increased to some extent, so that it is possible to suppress the mist of the processing liquid remaining on the inner surface 51d or the processing liquid staying in the liquid receiving space 60 from flowing back to the wafer W. Therefore, according to Modification 11, it is possible to suppress contamination of the wafer W by the flowing-back processing liquid.

[0185] Also, in Modification 11, similar to Modification 8 described above, when the nozzle 32 is at the processing position, at least a part of the opening 51f may be blocked by the protruding portion 59e. Thereby, when the nozzle 32 is at the processing position, the opening area of the opening 51f can be reduced, so that the gap area between the wafer W and the outer cup 51 can be reduced.

[0186] That is, in Modification 11, during the liquid treatment of the wafer W, the flow velocity of the swirling flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51. Therefore, it is possible to suppress the backflow of the treatment liquid remaining on the inner surface 51d or the mist of the treatment liquid staying in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 11, it is possible to suppress the contamination of the wafer W by the backflowed treatment liquid.

[0187] Further, in Modification 11, similar to Modification 8 described above, it is preferable that a slit 59f is provided between the protruding portion 59e and the side wall portion 59b. Thereby, a downward flow from the slit 59f can be formed in the space formed below the protruding portion 59e.

[0188] Therefore, according to Modification 11, it is possible to suppress the stagnation of the space formed below the protruding portion 59e, and thus it is possible to suppress the contamination of the wafer W by the mist of the treatment liquid staying in such a space.

[0189] <Modification 12> FIG. 27 is a perspective view showing the configuration of the cover 59 according to Modification 12 of the embodiment. Note that FIG. 27 is a perspective view when the nozzle 32 is viewed from above, and shows the case where the nozzle 32 is at the treatment position above the peripheral edge of the wafer W.

[0190] As shown in FIG. 27, Modification 12 is different from Modification 11 described above in that the cover 59 is not provided with the slit 59f. Also by this, since the side wall portions 59a and 59b are provided on the cover 59, the gap area between the wafer W and the outer cup 51 can be reduced.

[0191] That is, in Modification 12, in the gap between the wafer W and the outer cup 51, the flow velocity of the swirling flow of the wafer W can be increased to some extent. Therefore, it is possible to suppress the backflow of the treatment liquid remaining on the inner surface 51d or the mist of the treatment liquid staying in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 12, it is possible to suppress the contamination of the wafer W by the backflowed treatment liquid.

[0192] Also, in Modification 12, similar to Modification 11 described above, when the nozzle 32 is at the processing position, at least a part of the opening 51f may be blocked by the protruding portion 59e. Thereby, when the nozzle 32 is at the processing position, the opening area of the opening 51f can be reduced, so that the gap area between the wafer W and the outer cup 51 can be reduced.

[0193] That is, in Modification 12, during the liquid processing of the wafer W, the flow velocity of the swirling flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, so that it is possible to suppress the mist of the processing liquid remaining on the inner surface 51d or staying in the liquid receiving space 60 from flowing back to the wafer W. Therefore, according to Modification 12, contamination of the wafer W by the flowing-back processing liquid can be suppressed.

[0194] The substrate processing apparatus 1 according to the embodiment includes a substrate rotating unit 20 and a cup (outer cup 51). The substrate rotating unit 20 holds and rotates a substrate (wafer W). The cup (outer cup 51) annularly covers the periphery of the substrate (wafer W) held by the substrate rotating unit 20. Further, the cup (outer cup 51) has a cup base 53, a first member 55, and a second member 56. The cup base 53 surrounds the entire circumference of the substrate rotating unit 20. The first member 55 is detachably attached to the upper end of the cup base 53 and annularly surrounds the outer periphery of the substrate (wafer W). The second member 56 is detachably attached to at least the inner peripheral end of the first member 55, and the surface 56a is hydrophobic. Thereby, regardless of the surface state of the wafer W or the type of the processing liquid, the splashing of the processing liquid from the outer cup 51 can be suppressed.

[0195] Further, the substrate processing apparatus 1 according to the embodiment is movable in the horizontal direction and further includes a processing liquid nozzle (nozzle 32) that supplies a processing liquid to a substrate (wafer W) held by the substrate rotating unit 20. Further, the cup (outer cup 51) has an opening 51f formed to enable the movement of the processing liquid nozzle (nozzle 32) between a processing position above the peripheral edge of the substrate (wafer W) and a standby position outside the processing position. Further, the processing liquid nozzle (nozzle 32) has a cover 59 that closes at least a part of the opening 51f. Thereby, contamination of the wafer W by the backflowed processing liquid can be suppressed.

[0196] Further, in the substrate processing apparatus 1 according to the embodiment, the cover 59 has side wall portions 59a, 59b, 59c and an upper wall portion 59d. The side wall portions 59a, 59b, 59c are arranged close to the side portions of the processing liquid nozzle (nozzle 32). The upper wall portion 59d is arranged above the processing liquid nozzle (nozzle 32). Thereby, contamination of the wafer W by the backflowed processing liquid can be suppressed.

[0197] Further, in the substrate processing apparatus 1 according to the embodiment, the side wall portion 59b is arranged outside the processing liquid nozzle (nozzle 32) when viewed from the center of the substrate rotating unit 20, and closes at least a part of the opening 51f when the processing liquid nozzle (nozzle 32) is at the processing position. Thereby, contamination of the wafer W by the backflowed processing liquid can be suppressed.

[0198] Further, in the substrate processing apparatus 1 according to the embodiment, the side wall portion 59a is arranged inside the processing liquid nozzle (nozzle 32) when viewed from the center of the substrate rotating unit 20, and closes at least a part of the opening 51f when the processing liquid nozzle (nozzle 32) is at the standby position. Thereby, contamination of the wafer W by the backflowed processing liquid can be suppressed.

[0199] Further, in the substrate processing apparatus 1 according to the embodiment, the inner surface 51d of the cup (outer cup 51) has a horizontal portion 51d1 that extends horizontally outward from the location closest to the substrate (wafer W). Thereby, contamination of the wafer W by the backflowed processing liquid can be suppressed.

[0200] Further, in the substrate processing apparatus 1 according to the embodiment, the inner surface 55a of the first member 55 is hydrophilic, and the inner surface 53a of the cup base portion 53 is hydrophobic. Thereby, since it is possible to suppress the processing liquid remaining on the inner surface 55a from flowing back to the wafer W, it is possible to suppress contamination of the wafer W by the flowing-back processing liquid.

[0201] Further, in the substrate processing apparatus 1 according to the embodiment, the second member 56 has a support portion 56b supported by the first member 55, and a return portion 56c that bends from the inner peripheral end of the support portion 56b and extends in a direction approaching the peripheral edge of the substrate (wafer W). Thereby, it is possible to suppress contamination of the wafer W by the flowing-back processing liquid.

[0202] Further, in the substrate processing apparatus 1 according to the embodiment, the return portion 56c bends horizontally inward from the inner peripheral end of the first member 55 with a given width. Thereby, it is possible to suppress contamination of the wafer W by the flowing-back processing liquid.

[0203] Further, in the substrate processing apparatus 1 according to the embodiment, the tip of the return portion 56c further bends outward. Thereby, it is possible to suppress the wafer W from being contaminated by the droplets adhering to the tip of the return portion 56c.

[0204] Further, in the substrate processing apparatus 1 according to the embodiment, the tip of the return portion 56c covers the inner peripheral end of the first member 55 from below. Thereby, it is possible to suppress the wafer W from being contaminated by the droplets adhering to the inner peripheral end of the first member 55.

[0205] Further, in the substrate processing apparatus 1 according to the embodiment, an opening 56d for allowing the processing liquid scattered from the nozzle 32 to flow toward the first member 55 is provided in a part of the return portion 56c. Thereby, it is possible to further suppress contamination of the wafer W by the processing liquid scattered from the wafer W.

[0206] Also, in the substrate processing apparatus 1 according to the embodiment, the inner surface 55a of the first member 55 has a groove 55b formed along the direction of the flow in which the processing liquid supplied to the rotating substrate (wafer W) scatters outward. Thereby, the processing liquid adhering to the inner surface 55a of the first member 55 can be smoothly induced into the annular drain 64 using the swirling flow of the wafer W.

[0207] As described above, each embodiment of the present disclosure has been described. However, the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit thereof.

[0208] Each embodiment disclosed this time should be considered to be illustrative in all respects and not restrictive. Indeed, the above-described embodiments can be embodied in various forms. Also, the above-described embodiments may be omitted, replaced, or changed in various forms without departing from the scope of the appended claims and their spirit.

Explanation of Reference Numerals

[0209] W Wafer (an example of a substrate) 1 Substrate processing apparatus 12 Control unit 20 Substrate rotation unit 32 Nozzle 46 Cleaning liquid nozzle 50 Recovery unit 51 Outer cup 51d Inner surface 51d1 Horizontal portion 51f Opening 52 Inner cup 52a Inclined portion 52b Vertical portion 52c Outer surface 52d Inner surface 53 Cup base 53a Inner surface 54 Upper annular member 55 First member 55a Inner surface (an example of a hydrophilic surface) 56 Second member 56a Surface (an example of a hydrophobic surface) 56b Support portion 56c Return part 59 Cover 59a, 59b, 59c Side wall parts 59d Upper wall part 59e Protrusion 60 Liquid receiving space 61 Exhaust hole 62 Exhaust passage 63 Exhaust port 64 Annular drain 64a Drain port 64b Cleaning liquid supply part CL Cleaning liquid

Claims

1. a substrate rotating unit that holds and rotates a substrate; a cup that annularly covers the periphery of the substrate held by the substrate rotating unit; a processing liquid nozzle that is movable in the horizontal direction and supplies a processing liquid to the substrate held by the substrate rotating unit; and comprising the cup a cup base portion that surrounds the entire circumference of the substrate rotating unit; a first member that is detachably attached to the upper end portion of the cup base portion and annularly surrounds the outer periphery of the substrate; a second member that is detachably attached to at least the inner peripheral end of the first member and has a hydrophobic surface; an opening formed to enable the processing liquid nozzle to move between a processing position above the peripheral edge portion of the substrate and a standby position outside the processing position; and having the processing liquid nozzle has a cover that closes at least a part of the opening a substrate processing apparatus.

2. the inner surface of the first member is hydrophilic, the inner surface of the cup base portion is hydrophobic The substrate processing apparatus according to claim 1.

3. the cover has a side wall portion and an upper wall portion, the side wall portion is disposed close to the side portion of the processing liquid nozzle, the upper wall portion is disposed above the processing liquid nozzle The substrate processing apparatus according to claim 1 or 2.

4. the side wall portion is disposed outside the processing liquid nozzle when viewed from the center of the substrate rotating unit, and closes at least a part of the opening when the processing liquid nozzle is at the processing position The substrate processing apparatus according to claim 3.

5. The side wall portion is disposed inside the processing liquid nozzle when viewed from the center of the substrate rotating portion, and closes at least a part of the opening when the processing liquid nozzle is in the standby position. The substrate processing apparatus according to claim 3.

6. The inner surface of the cup has a horizontal portion that extends horizontally outward from the location closest to the substrate. The substrate processing apparatus according to claim 1 or 2.

7. The second member has a support portion supported by the first member, and a return portion that bends from the inner peripheral end of the support portion and extends in a direction approaching the peripheral edge of the substrate. and has The substrate processing apparatus according to claim 1 or 2.

8. The return portion bends horizontally inward from the inner peripheral end of the first member with a given width. The substrate processing apparatus according to claim 7.

9. The tip of the return portion further bends outward. The substrate processing apparatus according to claim 7.

10. The tip of the return portion covers the inner peripheral end of the first member from below. The substrate processing apparatus according to claim 9.

11. An opening is provided in a part of the return portion to allow the processing liquid scattered from the nozzle to flow toward the first member. The substrate processing apparatus according to claim 7.

12. The inner surface of the first member has a groove formed along the direction of the flow in which the processing liquid supplied to the rotating substrate scatters outward. The substrate processing apparatus according to claim 1 or 2.

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