Array sensor protection circuit, and array sensor

Abstract

To provide an array sensor protection circuit capable of protecting an output side circuit from failures of a sensor element.SOLUTION: An array sensor protection circuit arranged between a sensor element and a sensor drive circuit driving the sensor element, has: a fuse connected with an output of the sensor element and blown by a predetermined current; and a clamp diode connected with the fuse. The clamp diode includes a first diode and a second diode connected in series with each other. An output of the fuse is connected between the first diode and the second diode.SELECTED DRAWING: Figure 2B

Description

Technical Field

[0001] The present disclosure relates to an array sensor protection circuit and an array sensor.

Background Art

[0002] In an array sensor such as an image sensor in which a plurality of sensor elements are arranged, when a high voltage is used to drive the sensor elements, there is a risk that a high voltage will be applied to the drive circuit side in the event of a failure of the sensor elements. If a high voltage is applied to the drive circuit side due to a failure of the sensor elements, not only the drive circuit cell that drives the failed sensor element but also the surrounding drive circuit cells may be destroyed. A failure of an individual sensor element may cause a problem in the entire imaging system.

[0003] A configuration is known in which a photoelectric conversion film that generates and accumulates signal charges in response to incident light and a scanning means that controls the reading of the signal charges are connected via a current fusing means (for example, Patent Document 1). FIG. 1A is a diagram reconstructing a known structure. A sensor element and an accumulation diode CSD are connected in series, and a reverse bias is applied to the accumulation diode CSD. When a fuse connected in series between the sensor element and the accumulation diode CSD blows, a high voltage is instantaneously applied to the sensor drive circuit.

[0004] As a general overvoltage protection circuit, there is a diode clamp circuit. As shown in FIG. 1B, the diode clamp circuit is composed of a resistor and two diodes. When the voltage applied to either diode exceeds the forward voltage of the diode, the current flows to the power supply voltage side or the ground side according to the positive or negative of the input voltage.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] In the configuration of FIG. 1A, when the micro fuse blows, a momentary high voltage is applied to the sensor drive circuit side, making it difficult to sufficiently protect the sensor drive circuit. When the configuration of FIG. 1B is provided between the sensor element and the sensor drive circuit, since the voltage divided by the resistance element and the diode flows into the sensor drive circuit, it is necessary to set a high resistance value to withstand the high voltage. However, in order to make the most of the performance of the sensor, generally, a lower resistance value is desirable. In an array sensor in particular, since a plurality of sensor elements and a plurality of drive circuit cells are arranged, it is desirable that the protection circuit be small.

[0007] One aspect of the present disclosure aims to provide an array sensor protection circuit capable of protecting a circuit on the output side from a failure of a sensor element.

Means for Solving the Problems

[0008] In one embodiment of the present disclosure, an array sensor protection circuit disposed between a sensor element and a sensor drive circuit for driving the sensor element includes a fuse connected to the output of the sensor element and blowing with a predetermined current, and a clamp diode connected to the fuse, wherein the clamp diode includes a first diode and a second diode connected in series, and the output of the fuse is connected between the first diode and the second diode.

Advantages of the Invention

[0009] It is possible to protect a circuit on the output side from a failure of a sensor element.

Brief Description of the Drawings

[0010]

Figure 1A

Figure 1B

Figure 2A

Figure 2B

Figure 3

Figure 4

Figure 5

Figure 6A

Figure 6B

Figure 7A

Figure 7B

Figure 7C

Figure 7D

Figure 7E

Figure 7F

Figure 7G

Figure 8

Figure 9A

Figure 9B

Figure 9C

Embodiments for Carrying Out the Invention

[0011] In the embodiment, instead of the resistor used in a normal diode clamp circuit, a fuse element that blows at a constant current is used to form an array sensor protection circuit. The fuse element is formed of a low melting point metal, a thin metal wire disposed in a place where heat dissipation is poor (such as in an interlayer insulating film), and the like.

[0012] Figure 2A is a schematic diagram of the array sensor protection circuit 10 of the embodiment. The array sensor protection circuit 10 is provided between the sensor element 31 and the sensor drive circuit 21 in this example. The array sensor protection circuit 10 has a fuse 11 and a clamp diode 13. The fuse 11 is a fine element that blows when the current input from the sensor element exceeds a predetermined level. The clamp diode 13 is formed of two diodes D1 and D2 and controls the input voltage to the sensor drive circuit 21.

[0013] The diodes D1 and D2 of the clamp diode 13 are connected in series, and the output of the fuse 11 is connected to the node between the diodes D1 and D2. The cathode of the diode D1 is connected to the power supply voltage, and the anode of the diode D2 is connected to the ground.

[0014] When the sensor output is below a predetermined current level, the fuse 11 does not blow, and the sensor output passes through the clamp diode 13 and is connected to the sensor drive circuit 21. The predetermined current level is, for example, a level that does not exceed the forward voltage of the diodes D1 and D2. Since the voltages applied to the diodes D1 and D2 do not exceed the forward voltage, the diodes D1 and D2 do not conduct, and the sensor output is directly supplied to the sensor drive circuit 21.

[0015] Figure 2B is a diagram for explaining the operation of the clamp diode 13 during overvoltage. When the sensor output increases, for example, on the positive side and exceeds a predetermined current level, the fuse 11 blows, and a large voltage is applied to the clamp diode 13. When the voltage applied to the diode D1 exceeds the forward voltage, the diode D1 conducts, and the current output from the sensor element 31 flows to the power supply voltage side. Thereby, a situation where a high voltage is applied to the sensor drive circuit 21 can be prevented.

[0016] FIG. 3 is a schematic diagram of an array sensor 100 provided with an array sensor protection circuit 10. The array sensor 100 includes a sensor element array 30 in which a plurality of sensor elements 31 are arranged in an array, and an array drive circuit 20 that drives the sensor element array 30. The array drive circuit 20 has an array of individual sensor drive circuits 21 provided corresponding to each sensor element 31.

[0017] Each sensor element 31 is connected to a high-voltage source in order to accelerate the movement of carriers under a high electric field. Without a protection circuit, if any of the sensor elements 31 operating under high voltage fails, a high voltage will flow into the array drive circuit 20. In that case, not only the individual sensor drive circuit 21 corresponding to the failed sensor element 31 but also the surrounding sensor drive circuits 21 are likely to be damaged.

[0018] In the array sensor 100 of the embodiment, since the array sensor protection circuit 10 is provided between the sensor element 31 and the sensor drive circuit 21, even if any of the sensor elements 31 fails, the application of a high voltage to the array drive circuit 20 is interrupted. For example, in the case of an image sensor, the failed sensor element 31 becomes a missing pixel, but a calculation processing circuit that processes the output of the array drive circuit 20 can compensate for the missing pixel by correction processing or the like. Even if a sensor element 31 fails, there is almost no impact on the operation and function of the entire array sensor 100.

[0019] FIG. 4 shows a configuration example of the sensor drive circuit 21A used in the array sensor 100. During normal operation, that is, when the fuse 11 is not blown, when a predetermined bias is applied from the bias transistor BIAS to the sensor element 31, the current read out from the sensor element 31 passes through the fuse 11, passes through the non-conducting clamp diode 13, and is input to the sensor drive circuit 21A.

[0020] In this example, the sensor drive circuit 21A is a direct injection type drive circuit. In the direct injection type sensor drive circuit 21A, an element forming a resistor (i.e., the sensor element 31), a bias transistor BIAS, and an integration capacitor Cint are connected in series. By applying a bias voltage determined by the gate voltage of the bias transistor BIAS to the sensor element 31, the charge accumulated in the sensor element 31 is directly injected into the integration capacitor Cint.

[0021] By turning off the bias transistor BIAS and turning on the selection transistor SLCT, the charge accumulated in the integration capacitor Cint is output from the sensor drive circuit 21A via the drive transistor DRV. Thereafter, the integration capacitor Cint is reset by the reset transistor RST.

[0022] When the sensor element 31 is destroyed by a high voltage, the fuse 11 is blown by a large current. The high voltage is instantaneously applied to the clamp diode 13. For example, the diode D1 conducts and the high voltage flows to the power supply voltage side. Since no high voltage is applied to the sensor drive circuit 21A, the entire drive circuit having an array of a plurality of sensor drive circuits 21A is protected.

[0023] <Device Structure> FIG. 5 is a diagram showing a planar configuration example of the array sensor 100, FIG. 6A is a cross-sectional configuration example taken along the line I-I' of FIG. 5, and FIG. 6B is another cross-sectional configuration example. In FIG. 5, the array sensor 100 includes a plurality of sensor elements 31 included in the sensor element array 30 and fuses 11 connected to the respective sensor elements 31. The fuses 11 are connected to a lower layer clamp diode via wirings 315. In the sensor element array 30, one pixel 35 is formed by the sensor element 31, the fuses 11, and the wirings 315.

[0024] In the cross-sectional configuration example of FIG. 6A, the fuse 11A is formed in the same layer as the sensor element 31A and is connected to the clamp diode 13 in the lower layer via the wiring 315. The fuse 11A and the clamp diode 13 form the array sensor protection circuit 10A.

[0025] In the configuration example of FIG. 6B, the fuse 11B is formed in the same layer as the clamp diode 13 and is connected to the sensor element 31B by the individual electrode 313B. The fuse 11B and the clamp diode 13 form the array sensor protection circuit 10B.

[0026] The array drive circuits 20A and 20B (collectively referred to as the "array drive circuit 20" as appropriate) are formed, for example, as an integrated circuit on a silicon substrate and have an array of a plurality of sensor drive circuits 21. In FIGS. 6A and 6B, the individual sensor drive circuits included in the array drive circuits 20A and 20B are omitted. A sensor element array 30 including an array of sensor elements 31 is formed via an insulating film 23 covering the array drive circuit 20.

[0027] Returning to FIG. 5, each sensor element 31 of the sensor element array 30 uses graphene as the light absorption layer. A graphene layer 311 is connected between the common electrode 312 and the individual electrode 313. A high-voltage bias gate 24 is disposed below the graphene layer 311. The high-voltage bias gate 24 overlaps at least a part of the graphene layer 311. In this example, the high-voltage bias gate 24 is provided in a direction orthogonal to the direction in which the graphene layer 311 of each sensor element 31 extends between the electrodes.

[0028] The high-voltage bias gate 24 applies a high electric field to a part of the graphene layer 311. When no dielectric breakdown occurs, the high-voltage bias gate 24 forms a Fermi level gradient inside the graphene layer 311. An electromotive force corresponding to the amount of light incident on the graphene layer 311 is generated at both terminals (common electrode 312 and individual electrode 313) of the graphene layer 311. Due to this electromotive force, carriers move, and current flows through the individual electrode 313, fuse 11, and clamp diode 13 to the corresponding sensor drive circuit 21.

[0029] When dielectric breakdown occurs in the insulating film 23 between the high-voltage bias gate 24 and the graphene layer 311 in a specific pixel 35, the voltage of the high-voltage bias gate 24 flows into the clamp diode 13 through the graphene layer 311 and the fuse 11. Since a large amount of current flows instantaneously, the fuse 11 melts due to Joule heat. The current flows from the clamp diode 13 to the power supply voltage side (or ground side), so the entire array drive circuit 20 is not affected by a high voltage. In the sensor element array 30, operation continues normally except for the pixel 35 where dielectric breakdown has occurred.

[0030] As the material of the fuse 11, a low melting point material is desirable, and indium, tin, bismuth, alloys thereof, etc. can be used. A thin line of graphene can also be used for the fuse 11. The limiting current for melting can be adjusted by the thickness and width of the material constituting the fuse 11.

[0031] <Device Fabrication Process> Figs. 7A to 7G are process diagrams for manufacturing the array sensor 100A shown in Fig. 6A. In Fig. 7A, elements on the array driving circuit 20 side are formed on the silicon substrate 201. In this example, on the silicon substrate 201 and the silicon layer 202, field-effect transistors 210 and 220, and a bipolar transistor 130 for a clamp circuit are formed. Transistors 210 and 220 are, for example, transistors for bias setting and constitute CMOS (Complementary Metal Oxide Semiconductor). Since transistors 210 and 220, and bipolar transistor 130 are formed by known methods, detailed descriptions thereof are omitted.

[0032] At necessary locations on the silicon substrate 201, mask pattern formation, ion implantation, and annealing are repeated at necessary timings to form a p region, an n+ region, a p well, and an n well. For example, Sb is ion-implanted as an n-type impurity, B is ion-implanted as a p-type impurity, and then the silicon layer 202 is epitaxially grown. Thereafter, Sb is ion-implanted into the n-type region, an oxide film is formed, and B is implanted. The substrate is planarized to form element isolation, and transistors 210, 220, and bipolar transistor 130 are formed.

[0033] The gates of transistors 210 and 220, and the electrodes of bipolar transistor 130 may be formed of polysilicon. An emitter contact is formed at the interface between the electrode of bipolar transistor 130 and the p-type diffusion layer in the n well. In the example of Fig. 7A, bipolar transistor 130 is of the pnp type and has a structure in which two diodes are connected in reverse without application of a bias.

[0034] In FIG. 7B, an interlayer insulating film 206 and multilayer wiring 240 are formed on a silicon substrate 201 on which transistors 210 and 220 and bipolar transistor 130 are formed. The multilayer wiring 240 includes wiring connected to the gates of transistors 210 and 220 and wiring connected to bipolar transistor 130. On the surface of the interlayer insulating film 206, wirings 241, 242, and 243 are formed.

[0035] In FIG. 7C, a thick interlayer insulating film 207 is formed to cover the interlayer insulating film 206 and wirings 241, 242, and 243, and a high-voltage bias gate 24 is formed on the interlayer insulating film 207.

[0036] In FIG. 7D, an interlayer insulating film 208 is formed to cover the interlayer insulating film 207 and the high-voltage bias gate 24, and holes 245 and 247 for wiring extraction are formed. Hole 245 penetrates the interlayer insulating films 208 and 207 and reaches wiring 241. Hole 247 penetrates the interlayer insulating films 208 and 207 and reaches wiring 243. Note that wiring 242 is connected to a hole that penetrates the interlayer insulating films 208 and 207 at a position not appearing in this cross section.

[0037] In FIG. 7E, holes 245 and 247 are filled with a conductor to form wirings 211 and 212, and a common electrode 312, individual electrodes 313, and wiring 315 are formed on the surface of the interlayer insulating film 208. Wiring 212 becomes part of wiring 315.

[0038] In FIG. 7F, a low melting point metal 110 is formed between the individual electrode 313 and the wiring 315. The low melting point metal 110 is formed by vapor deposition, lift-off, or the like. This low melting point metal 110 functions as a fuse 11.

[0039] In FIG. 7G, a graphene layer 311 is connected between the common electrode 312 and the individual electrode 313. The graphene layer 311 may be patterned into a predetermined pattern after the graphene layer is attached by a transfer method. Thereby, a sensor element 31 is formed. Also, a low melting point metal 110 serving as a fuse and a lower bipolar transistor 130 form an array sensor protection circuit 10A (see FIG. 6A).

[0040] During normal operation, due to the action of the high-voltage bias gate 24, the light incident on the graphene layer 311 generates a photovoltaic power between the common electrode 312 and the individual electrode 313. The photovoltaic power is transmitted to the wiring layer 315 via the low-melting-point metal 110. The wiring layer 315 connected to each sensor becomes an input signal to the sensor driving circuit 21 composed of transistors 210, 220, etc. via a clamp circuit composed of bipolar transistors 130. On the other hand, when breakdown occurs between the graphene layer 311 and the high-voltage bias gate 24, a high voltage is applied to the individual electrode 313 and the common electrode 312. Since the common electrode 312 is usually connected to a GND potential or the like, it has resistance to high-voltage application. On the side of the individual electrode 313, when current flows through the clamp circuit composed of bipolar transistors 130, the low-melting-point metal 110 melts, so that the subsequent sensor driving circuit 21 composed of transistors 210, 220 is protected from the high voltage.

[0041] When fabricating the structure of FIG. 6B, in the same process as forming the gates of transistors 210 and 220 and the electrodes of bipolar transistor 130 in FIG. 7A, fuses 11B are formed with polysilicon fine wires or silicide fine wires. By designing the width of the polysilicon fine wire or the silicide fine wire, the current to be blown can be set.

[0042] <Other Modifications> FIG. 8 shows another configuration example of the sensor drive circuit. Instead of the sensor drive circuit 21A in FIG. 4, the sensor drive circuit 21B in FIG. 8 may be used. This circuit configuration corresponds to a circuit configuration called CTIA (Capacitive Transimpedance Amplifier). It is effective in the case of a sensor whose characteristics vary greatly with the bias voltage. The sensor drive circuit 21B converts the charge generated by the sensor element 31 and stored in the integration capacitor Cint into a voltage and outputs it. During normal operation, the current flowing from the sensor element 31 through the fuse 11 and the clamp diode 13 to the sensor drive circuit 21B is connected to one input of the operational amplifier 26. The other input terminal of the operational amplifier 26 is connected to the ground potential. The reset transistor RST functions as a negative feedback resistor and determines the gain of the operational amplifier 26.

[0043] FIGS. 9A to 9C show a flip-chip bonded array sensor 200 as another configuration example. FIG. 9A is a cross-sectional view of the array sensor 200, FIG. 9B is a plan view of the substrate 150 on which the sensor element array 30 is formed, and FIG. 9C is a plan view of the substrate 250 on which the array drive circuit 20 is provided.

[0044] As shown in FIG. 9A, the substrate 250 including the array drive circuit 20 (see FIG. 3) and the substrate 150 including the array of sensor elements 31 may be prepared separately and bonded with the protruding electrodes 152, 152a, 152b. The substrate 150 and the substrate 250 are, for example, silicon substrates.

[0045] A plurality of sensor elements 31 are formed on the substrate 150 via the interlayer insulating film 154. The sensor element 31 has a graphene layer 311 as a light absorption layer. Graphene has a high resistance value, and a fusible fuse 11C is formed in a fine element shape. Each sensor element 31 is connected to the graphene fuse 11C via an individual electrode 313. The graphene fuse 11C is connected to a clamp diode 13 (see FIG. 6A) formed on the substrate 250 by a wiring 315 penetrating the substrate 150 and a protruding electrode 152b.

[0046] The circuit scale of the array sensor protection circuit 10 formed by the graphene fuse 11C and the clamp diode (for example, a bipolar transistor on the substrate 250) is small, and when viewed in plan view, the planar area occupied by one array sensor protection circuit 10 is small.

[0047] The common electrode 312 of the sensor element 31 is connected to the array drive circuit 20 formed on the substrate 250 by the wiring 248 penetrating the substrate 150 and the protruding electrode 152a. The high-voltage bias gate 24 embedded in the interlayer insulating film 154 is connected to the high-voltage source (see FIG. 3) formed on the substrate 250 by the wiring 249 penetrating the substrate 150 and the protruding electrode 152c.

[0048] In the sensor element array 30, the graphene layer 311 and the graphene fuse 11C are formed simultaneously. A graphene film is arranged on the entire element surface of the substrate 150 by a transfer method or the like, and may be processed into the pattern of the graphene layer 311 and the pattern of the graphene fuse 11C in one step.

[0049] FIG. 9B shows an example of the pixel arrangement of the sensor element array 30 formed on the substrate 150. On the substrate 150, the graphene layer 311 is connected between the common electrode 312 and the individual electrode 313 to form the sensor element 31. The sensor element 31 is connected to the graphene fuse 11C via the individual electrode 313.

[0050] The pixel 35 is formed by the sensor element 31, the graphene fuse 11C, and the wiring 315. The graphene fuse 11C is connected to the clamp diode on the substrate 250 side by the wiring 315 to form the array sensor protection circuit 10 (see FIG. 6A).

[0051] FIG. 9C shows an example of a planar layout of a substrate 250 on which an array driving circuit 20 is provided. On the substrate 250, a sensor driving circuit 21 is formed at a position corresponding to the pixel 35 of the substrate 150. Corresponding to each sensor driving circuit 21, a protruding electrode 152b is arranged. A protruding electrode 152a connected to the common electrode 312 on the substrate 150 and a protruding electrode 152c connected to the high-voltage bias gate 24 are provided at the outer peripheral portion of the array of the sensor driving circuits 21.

[0052] The configurations of FIGS. 9A to 9C can ensure heat dissipation on the array driving circuit 20 side while enabling the graphene fuse 11C to be blown.

[0053] As described above, according to the configuration of the embodiment, in an array sensor that uses a high voltage to drive the sensor element 31, when dielectric breakdown occurs in a specific pixel 35, the fuse 11 of this pixel blows, disconnecting the faulty pixel from the array driving circuit 20. At that time, the high voltage from the faulty pixel escapes to the power supply voltage side or the ground side through the clamp diode of the array sensor protection circuit 10, so that the entire array driving circuit 20 is not affected. All pixels other than the faulty pixel can be used as they are. As a result, an array sensor with high fault tolerance is realized. Also, the entire array driving circuit can be protected from high voltage without increasing the input resistance of the sensor driving circuit 21 in a small-scale circuit.

[0054] The array sensor protection circuit and the array sensor of the present disclosure are not limited to the above-described configuration examples. The light absorption layer of the sensor element 31 is not limited to the graphene layer 311, and may be a light absorption layer of a multiple quantum well, a light absorption layer of a type-II superlattice, etc. The graphene film for forming the graphene layer 311 and the graphene fuse 11C is not limited to the transfer method, and may be directly grown by CVD or the like on a wafer on which wiring is formed. In any case, the entire array driving circuit 20 is protected by the array sensor protection circuit 10.

Description of Reference Numerals

[0055] 10, 10A, 10B Array sensor protection circuit 11, 11A, 11B Fuses 11C Graphene Fuse 13 Clamp Diode 20, 20A, 20B Array Drive Circuit (Drive Circuit) 21, 21A, 21B Sensor Drive Circuit 24 High-Voltage Bias Gate (Bias Gate) 30 Sensor Element Array 31, 31A, 31B Sensor Elements 100, 100A, 100B, 200 Array Sensors 311 Graphene Layer (Light Absorption Layer) 312 Common Electrode (First Electrode) 313 Individual Electrode (Second Electrode)

Claims

1. In an array sensor protection circuit disposed between a sensor element and a sensor drive circuit for driving the sensor element, a fuse connected to the output of the sensor element and blown by a predetermined current; a clamp diode connected to the fuse; having the clamp diode includes a first diode and a second diode connected in series, and the output of the fuse is connected between the first diode and the second diode; when the sensor element fails and the sensor element outputs a high voltage, the fuse blows; an array sensor protection circuit.

2. The fuse and the clamp diode are provided in different layers and are connected by wiring penetrating the layers. The array sensor protection circuit according to claim 1.

3. In an array sensor protection circuit disposed between a sensor element and a sensor drive circuit for driving the sensor element, a fuse connected to the output of the sensor element and blown by a predetermined current; a clamp diode connected to the fuse; having, the clamp diode includes a first diode and a second diode connected in series, and the output of the fuse is connected between the first diode and the second diode; the fuse and the clamp diode are provided in the same layer, and the fuse is connected to the sensor element by wiring penetrating the layers. an array sensor protection circuit.

4. The first diode is connected to a power supply voltage, the second diode is connected to a ground potential, and when the fuse blows, the current flowing into the clamp diode flows to the power supply voltage side or the ground side. The array sensor protection circuit according to any one of claims 1 to 3.

5. The fuse is formed of a low melting point metal or graphene. The array sensor protection circuit according to any one of claims 1 to 4.

6. A sensor element array including an array of a plurality of sensor elements, A drive circuit including a plurality of sensor drive circuits for driving the plurality of sensor elements, A protection circuit connected between the sensor element and the sensor drive circuit, having The protection circuit has a fuse connected to the output of the sensor element and blown by a predetermined current, and a clamp diode connected to the fuse, The clamp diode has a first diode and a second diode connected in series between a power supply voltage and a ground potential, and prevents the inflow of voltage into the drive circuit when the fuse blows, When the sensor element fails and the sensor element outputs a high voltage, the fuse blows. Array sensor.

7. A sensor element array including an array of a plurality of sensor elements, A drive circuit including a plurality of sensor drive circuits for driving the plurality of sensor elements, A protection circuit connected between the sensor element and the sensor drive circuit, having The protection circuit has a fuse connected to the output of the sensor element and blown by a predetermined current, and a clamp diode connected to the fuse, The clamp diode has a first diode and a second diode connected in series between a power supply voltage and a ground potential, and prevents the inflow of voltage into the drive circuit when the fuse blows, The sensor element has a bias gate connected to a high voltage source, When dielectric breakdown occurs between the sensor element and the bias gate, the fuse blows. Array sensor. Claim 8 The sensor element has a first electrode, a second electrode, and an optical absorption layer connected between the first electrode and the second electrode, and the bias gate is arranged to overlap at least a part of the optical absorption layer. The array sensor according to claim 7. Claim 9 The optical absorption layer and the fuse are formed of graphene. The array sensor according to claim 8. Claim 10 The clamping diode is a bipolar transistor formed in the same layer as the drive circuit. The array sensor according to any one of claims 6 to 9.

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