Bonding apparatus

Abstract

To replace the air around a junction between a semiconductor chip and a substrate with inert gas at a high level.SOLUTION: The present invention relates to a bonding device 3 provided with gas supply means 17 that injects an inert gas from an injection port provided adjacent to a holding portion 5a of a bonding head 5. The injection port (slit S) is provided so as to surround a holding portion 5a of the bonding head 5, and a portion of the slit S is set as a slit SL having a larger ejection flow rate of the inert gas than the narrow slit SS of the other portion, an air curtain C surrounding the junction between a semiconductor chip 1 and a substrate 2 is formed by the inert gas jetted from the wide slit SL and the narrow slit SS, and a flow circulating between the semiconductor chip 1 and the substrate 2 is formed by the injected inert gas ejected from the wide slit SL.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a bonding apparatus, and more particularly to a bonding apparatus provided with gas supply means for replacing the air around the bonding portion between a semiconductor chip and a substrate with an inert gas when bonding the semiconductor chip to the substrate.

Background Art

[0002] Conventionally, a bonding apparatus is known which includes a bonding head having a holding portion for holding a semiconductor chip and a bonding stage for supporting a substrate, and which bonds the semiconductor chip to the substrate by bringing them into close contact with each other. Here, in the case of a bonding apparatus that heats and bonds a semiconductor chip onto a substrate, in order to prevent poor bonding due to oxidation of the bonding portion between the semiconductor chip and the substrate, the air around the bonding portion is replaced with an inert gas (Patent Documents 1 and 2). In the bonding apparatuses of Patent Documents 1 and 2, an injection port for injecting an inert gas is provided in the bonding head that holds the semiconductor chip, so as to form an air curtain around the bonding portion and fill the inside of the air curtain with an inert gas.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the bonding apparatuses disclosed in Patent Documents 1 and 2, since an inert gas is ejected from the ejection ports surrounding the semiconductor chip at the same ejection flow rate, stagnation of the inert gas occurs in the central portion of the air curtain, and there is a case where the air containing oxygen remaining in this portion cannot be completely removed. In view of such problems, the present invention provides a bonding apparatus capable of replacing the air around the bonding portion between the semiconductor chip and the substrate with an inert gas at a high level.

Means for Solving the Problems

[0005] That is, in claim 1 The invention described in A bonding apparatus comprising: a bonding stage for supporting a substrate; a bonding head having a holding portion for holding a semiconductor chip; an ejection port provided adjacent to the holding portion of the bonding head; and gas supply means for ejecting an inert gas from the ejection port, the ejection port is provided so as to surround the holding portion of the bonding head, and a part of the ejection port is a large ejection port in which the ejection flow rate of the inert gas is set larger than that of the small ejection ports in other portions, an air curtain surrounding the bonding portion between the semiconductor chip and the substrate is formed by the inert gas ejected from the large ejection port and the small ejection ports, and an inert gas ejected from the large ejection port forms a flow that circulates between the semiconductor chip and the substrate 、 the injection port is formed by a slit provided along the holding portion in the bonding head, and the slit constituting the large injection port is set wider than the slit constituting the small injection port characterized thereby. Further, the invention described in claim 3 is a bonding apparatus including a bonding stage for supporting a substrate, a bonding head having a holding portion for holding a semiconductor chip, an injection port provided adjacent to the holding portion of the bonding head, and gas supply means for injecting an inert gas from the injection port. the injection port is provided so as to surround the holding portion of the bonding head, and a part of the injection port is a large injection port in which the injection flow rate of the inert gas is set larger than that of the small injection ports in other parts. An air curtain surrounding the bonding portion between the semiconductor chip and the substrate is formed by the inert gas injected from the large injection port and the small injection port, and an inert gas injected from the large injection port forms a flow flowing between the semiconductor chip and the substrate. It is characterized in that the injection port is formed so as to surround the holding portion of the bonding head in an endless shape.

Advantages of the Invention

[0006] According to the above invention, an air curtain can be formed around the bonding portion between the semiconductor chip and the substrate by the ejection port provided so as to surround the holding portion of the bonding head, and the inflow of air into the inside of the air curtain can be prevented. Furthermore, by making a part of the injection ports into large injection ports with a large injection flow rate, the inert gas flowing out from the large injection ports forms a flow that circulates between the semiconductor chip and the substrate and heads towards the small injection ports. As a result, the air between the semiconductor chip and the substrate can be removed by the flow of the inert gas, and oxidation of the bonding portion can be prevented by replacing the air in the bonding portion with the inert gas at a high level.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Modes for Carrying Out the Invention

[0008] Hereinafter, with reference to the illustrated embodiments, FIG. 1 shows a bonding apparatus 3 for bonding a semiconductor chip 1 to a substrate 2, which includes a bonding stage 4 for supporting the substrate 2, a bonding head 5 having a holding portion 5a for holding the semiconductor chip 1, and a moving means 6 for moving the bonding head 5, and these are controlled by a control means (not shown). As shown in FIG. 2, the semiconductor chip 1 has a substantially square shape, and a plurality of electrodes 1a are provided on the back surface of the semiconductor chip 1, and bumps B made of solder are formed on each electrode 1a. Further, the substrate 2 is formed larger than the semiconductor chip 1, and electrodes 2a are provided at required positions on the surface of the substrate 2 in the same arrangement as the electrodes 1a of the semiconductor chip 1. Bumps B made of solder are formed on each of the electrodes 2a. Then, when the bonding stage 4 holding the semiconductor chip 1 is moved by the moving means 6 and the semiconductor chip 1 is brought into close contact with a required position on the substrate 2 supported by the bonding stage 4, the bumps B are melted to bond the semiconductor chip 1 and the substrate 2.

[0009] The bonding stage 4 has a larger area than the substrate 2 and is configured to adsorb and hold the substrate 2 on its upper surface by an adsorption means (not shown). Note that the moving means 6 may include an X-Y table that moves the bonding stage 4 in the horizontal direction. The bonding head 5 includes laser light irradiation means 11 that irradiates laser light L toward the semiconductor chip 1 inside a housing (not shown). Further, below the housing, there are provided a holding portion 5a that adsorbs and holds the semiconductor chip 1 by negative pressure, an injection portion 5b provided around the holding portion 5a that forms an air curtain C by an inert gas, and a measurement portion 5c that measures the oxygen concentration inside the air curtain C. The laser light irradiation means 11 irradiates the laser light L downward and irradiates the semiconductor chip 1 adsorbed and held on the lower surface of the holding portion 5a with the laser light L, thereby melting the bumps B formed on the electrodes 1a and 1b of the semiconductor chip 1 and the substrate 2. Note that instead of the laser light irradiation means 11, known heating means such as a pulse heater may be used to melt the bumps B formed on the electrodes 1a and 1b of the semiconductor chip 1 and the substrate 2. The moving means 6 is configured to move the bonding head 5 in the horizontal direction (X-Y direction) and to move it up and down in the vertical direction (Z direction), and further includes a rotation mechanism that rotates the semiconductor chip 1 together with the bonding head 5.

[0010] The holding part 5a includes two transparent plates 12 and a holder 13 that holds the outer peripheral portions of the plates 12, and a negative pressure supply means 14 for supplying negative pressure is connected to the holding part 5a. The two plates 12 are made of a transparent material such as quartz or glass that transmits the laser beam L from the laser beam irradiation means 11, and have a substantially square shape with an area larger than that of the semiconductor chip 1 as shown in FIG. 2. A spacer 15 is provided between the two plates 12 in an endless manner along the outer peripheral edge of the plates 12, so that a space is formed between the two plates 12. The holder 13 is provided so as to surround the two plates 12 and the spacer 15, and allows the laser beam L irradiated by the laser beam irradiation means 11 to pass through the two plates 12 from above to below.

[0011] Also, a negative pressure passage 14a communicating with the negative pressure supply means 14 is formed in the holder 13 and the spacer 15, and the negative pressure supplied through the negative pressure passage 14a flows into the space formed between the plates 12. A through hole 12a is formed in the substantially central portion of the lower plate 12 among the two plates 12 in the vertical direction. When the semiconductor chip 1 is located at the position of the through hole 12a, the semiconductor chip 1 is adsorbed to the lower surface of the plate 12 by the negative pressure supplied to the space. The negative pressure supply means 14 is controlled by the control means, and it is possible to adsorb, hold, and release the semiconductor chip 1 by controlling the supply of negative pressure.

[0012] The injection part 5b is constituted by a frame 16 that further surrounds the outer periphery of the holder 13 that constitutes the holding part 5a, and the frame 16 has a substantially U-shaped cross section with an opening facing inward. As a result, a space that endlessly surrounds the holder 13 is formed between the frame 16 and the outer peripheral surface of the holder 13, and a gas supply means 17 is connected to the space via a gas passage 17a formed in the frame 16. When bonding the semiconductor chip 1 and the substrate 2, the gas supply means 17 supplies an inert gas such as nitrogen gas so as to prevent bonding failure due to oxidation. In this embodiment, as shown in FIG. 2, the gas passages 17a are provided at the four corners of the frame 16, and are connected to the respective gas passages 17a from the gas supply means 17 via a branch pipe. A slit S as an injection port is formed between the lower part of the frame 16 and the outer peripheral surface of the holder 13. The slit S communicates with the space formed inside the frame 16, and injects the inert gas supplied to the space downward.

[0013] As shown in FIG. 2, the slit S is provided at a position corresponding to each side of the holding portion 5a having a substantially square shape. More specifically, the slit S is formed in a substantially square shape along the outer peripheral edge of the holder 13 in an endless manner. In the bonding apparatus 3 of this embodiment, one slit S located on the left side in the drawing is a wide slit SL as a large injection port, and the other three slits S are narrow slits SS as small injection ports. In this embodiment, the width of the wide slit SL is set to 5 mm, the width of the narrow slit SS is set to 0.5 mm, and the opening area of the wide slit SL is set to be about 10 times that of the narrow slit SS. With such a configuration, it is possible to inject the inert gas supplied from the gas supply means 17 from the wide slit SL at a larger ejection flow rate than that from the narrow slit SS. Here, in this embodiment, in order to make the ejection flow rate of the inert gas from the wide slit SL larger than the ejection flow rate of the narrow slit SS, among the gas passages 17a formed in the frame 16, two gas passages 17a (located on the left side in the drawing in FIG. 2) provided adjacent to the wide slit SL are provided at positions closer to the wide slit SL.

[0014] The measurement unit 5c measures whether the air around the semiconductor chip 1 held by the holding unit 5a is replaced by an inert gas by using the oxygen concentration measuring means 18. On the plate 12 provided on the lower side in the holding unit 5a, four suction ports 12b are formed around the semiconductor chip 1 to be adsorbed and held, and the suction ports 12b are connected to the oxygen concentration measuring means 18 through the measurement passages 18a formed in the upper plate 12 and the spacer 15. The oxygen concentration measuring means 18 sucks the air in the space below the holding unit 5a from the suction port 12b and measures the oxygen concentration in the sucked air. The control means determines whether the air around the semiconductor chip 1 is replaced by an inert gas based on the measurement result. When the control means determines that the air around the semiconductor chip 1 is not sufficiently replaced by the inert gas, it controls the moving means 6 to narrow the distance between the bonding head 5 and the bonding stage 4, or increases the injection amount of the inert gas by the gas supply means 17. Here, the oxygen concentration measuring means 18 can suck air simultaneously from the four suction ports 12b formed around the semiconductor chip 1 to integrally measure the oxygen concentration around the semiconductor chip 1. However, by using a switching valve or the like, it is possible to suck air individually from each suction port 12b and pinpoint-measure the oxygen concentration around each suction port 12b. In this embodiment, the suction ports 12b are provided at a total of four locations adjacent to each side of the semiconductor chip 1 being adsorbed and held. However, as long as it is within the range where the holding portion 5a is formed and does not interfere with the adsorption of the semiconductor chip 1, the position and number thereof can be appropriately changed.

[0015] Hereinafter, the operation of the bonding apparatus 3 having the above configuration will be described. First, the control means moves the bonding head 5 to a chip supply means (not shown) by the moving means 6, and the bonding head 5 adsorbs and holds the semiconductor chip 1 on the holding portion 5a by the negative pressure from the negative pressure supply means 14. On the other hand, the control means supplies the substrate 2 to a required position of the bonding stage 4 by a substrate supply means (not shown), and the bonding stage 4 adsorbs and holds the substrate 2. Subsequently, the control means uses a photographing means (not shown) to photograph the semiconductor chip 1 adsorbed and held by the bonding head 5 and the substrate 2 held by the bonding stage 4, and recognizes their relative positional relationship. Thereafter, the control means moves the bonding head 5 above the bonding stage 4 by the moving means 6. At this time, fine adjustment of the position of the semiconductor chip 1 in the horizontal direction and rotation in the horizontal plane are performed so that the position of the electrode 1a of the semiconductor chip 1 coincides with the position of the electrode 2a of the substrate 2.

[0016] FIG. 1 shows a state in which the semiconductor chip 1 held by the bonding head 5 is located above the bonding position of the semiconductor chip 1 on the substrate 2 supported by the bonding stage 4 (for example, at a position where the amount of the gap between the bonding head 5 and the bonding stage 4 is 5 mm). When the semiconductor chip 1 is located above the bonding position on the substrate 2, the control means supplies an inert gas by the gas supply means 17, and the inert gas is supplied to the space formed inside the frame 16 through the gas passage 17a and is jetted downward from the slit S as an injection port formed in the gap between the frame 16 and the holder 13. As shown in Fig. 2, when the inert gas ejected from the slit S collides with the surface of the substrate 2 or the bonding stage 4 located below, it flows along the substrate 2 or the bonding stage 4 so as to spread. Since the slit S is provided so as to surround the holding portion 5a, the ejected inert gas forms a laminar air curtain C that surrounds the bonding position between the semiconductor chip 1 adsorbed and held by the holding portion 5a and the substrate 2. In this embodiment, since the slit S is provided so as to surround the holding portion 5a in an endless manner, it is possible to continuously form the air curtain C. By forming the air curtain C, it is possible to prevent the inflow of air from the outside of the air curtain C and prevent the bonding portion from being oxidized when the semiconductor chip 1 and the substrate 2 are bonded. In addition, the inert gas flowing into the space between the bonding head 5 and the bonding stage 4 fills the space between the semiconductor chip 1 and the substrate 2, so as to exclude the oxygen that has existed until then to the outside.

[0017] In the bonding apparatus 3 of this embodiment, out of the four slits S surrounding the holding portion 5a, one is a wide slit SL as a large ejection port, and the others are narrow slits SS as small ejection ports. With such a configuration, as shown in Fig. 1, the inert gas flowing from the wide slit SL with a large ejection flow rate to the inside of the air curtain C flows toward the narrow slit SS with a small ejection flow rate provided at a position facing the wide slit SL across the semiconductor chip 1, and forms a main flow that is a laminar flow crossing the semiconductor chip 1 below the bonding head 5. Particularly, when the semiconductor chip 1 held by the bonding head 5 is located above the substrate 2, since the flow of this inert gas (main flow) passes between the semiconductor chip 1 and the substrate 2, the air containing oxygen that has existed until then can be excluded at a high level. On the other hand, if the ejection flow rates of the inert gas from the four slits S surrounding the holding portion 5a are equal, the inert gas injected inside the air curtain C may stay in the central portion of the air curtain C, that is, between the semiconductor chip 1 and the substrate 2, and the air containing oxygen that had been present may not be excluded.

[0018] In this way, when the space between the semiconductor chip 1 and the substrate 2 is replaced by the inert gas, the control means controls the laser light irradiation means 11 to irradiate the semiconductor chip 1 with the laser light L, melts the bump B of the semiconductor chip 1, and then lowers the bonding head 5 to bring the semiconductor chip 1 into close contact with the substrate 2. When the semiconductor chip 1 is brought into close contact with the substrate 2, the irradiation of the laser light L by the laser light irradiation means 11 is stopped. Then, when the melted bump B is cooled and solidified and the semiconductor chip 1 and the substrate 2 are joined, the control means stops the supply of the negative pressure by the negative pressure supply means 14 and raises the bonding head 5 to separate it from the semiconductor chip 1. Note that while the inert gas is being injected from the injection port to form the air curtain C and the main flow, the laser light irradiation means 11 may irradiate the semiconductor chip 1 with the laser light L to preheat the semiconductor chip 1, or the laser light irradiation means 11 may irradiate the semiconductor chip 1 with the laser light L in a state where the bonding head 5 is lowered and the semiconductor chip 1 is in close contact with the substrate 2.

[0019] Here, when replacing the space between the semiconductor chip 1 and the substrate 2 with the inert gas, it is necessary to appropriately set the gap amount between the bonding head 5 and the bonding stage 4 shown in FIG. 1 and the flow rate of the inert gas that the gas supply means 17 injects from the injection portion 5b. For example, if the gap amount is set too large, although it becomes easier to form the main flow from the wide slit SL toward the narrow slit SS, there is a high possibility that air will enter from the outside of the air curtain C. On the other hand, if the flow rate of the inert gas injected from the injection unit 5b is set too high, although the replacement rate of the inert gas inside the air curtain C can be increased, the semiconductor chip 1 and the substrate 2 will be cooled by the inert gas. Therefore, it is necessary to add a heating means for the inert gas, which leads to an increase in the device cost. Therefore, in the bonding apparatus 3 of the present embodiment, the oxygen concentration measuring device 18 measures the oxygen concentration inside the air curtain C. When the control means determines that the oxygen concentration inside the air curtain C has not reached the desired concentration, it determines that the replacement by the inert gas is insufficient. In that case, the control means performs feedback control to lower the bonding head 5 by the moving means 6 to reduce the gap amount and increase the flow rate of the inert gas by the gas supply means 17. At this time, a suitable setting range for the gap amount and the flow rate of the inert gas may be set in advance, and the control means may perform control to change at least one of the gap amount or the flow rate based on this set value. Alternatively, without performing feedback control, suitable gap amounts and flow rates are registered in advance in the control means for each type of the semiconductor chip 1 and the substrate 2. When bonding the corresponding type by the bonding apparatus 3, the gap amount and the flow rate may be selected by automatic type discrimination via the imaging means or manual selection by the operator.

[0020] Hereinafter, FIGS. 3 to 7 show the bonding apparatus 3 according to the second to sixth embodiments, all of which have different shapes of the injection ports provided in the bonding head 5 with respect to the first embodiment. In each of the following embodiments, the oxygen concentration inside the air curtain C is measured using the suction port 12b, but the description of this configuration will be omitted. Also in the bonding apparatus 3 of the second embodiment shown in FIG. 3, the holding portion 5a of the bonding head 5 has a substantially square shape, and the injection port of the present embodiment is constituted by four slits S provided along the holding portion 5a. Also in this embodiment, one slit S is a wide slit SL, and the other three are narrow slits SS. However, different from the first embodiment, both ends of each slit S are not connected to each other, and they do not surround the holding portion 5a in an endless manner, but are independent of each other. However, the wide slit SL and the narrow slit SS are set according to the width of the semiconductor chip 1 adsorbed and held by the holding portion 5a. Even when the semiconductor chip 1 is held in a rotated state inside the holding portion 5a as shown by the dashed line, a length comparable to both ends thereof is ensured. With such a configuration, similar to the first embodiment, the flow of the inert gas jetted from the wide slit SL can be formed between the semiconductor chip 1 and the substrate 2, and the air between the semiconductor chip 1 and the substrate 2 can be replaced with the inert gas at a high level. In this embodiment, although adjacent slits S are not connected to each other and do not surround the holding portion 5a in an endless manner, since the length of the slit S is provided according to the lengths of both ends of the semiconductor chip 1, the air curtain C can be formed around the semiconductor chip 1.

[0021] The bonding apparatus 3 of the third embodiment shown in FIG. 4 includes four slits S along the holding portion 5a. However, compared with the bonding apparatus 3 in the second embodiment, both ends of the slit S provided along the holding portion 5a are connected to each other, and the holding portion 5a is surrounded in an endless manner. On the other hand, in this embodiment, different from the bonding apparatus 3 in the first embodiment, for the slit S in which the wide slit SL is formed, the range in which the wide slit SL is formed is provided according to the width in which the semiconductor chip 1 is held, and narrow slits SS are formed on both sides of the wide slit SL. By adopting such a configuration, by providing the wide slit SL in the range where the semiconductor chip 1 is held, it becomes possible to concentrate the flow by the inert gas in the range where the semiconductor chip is held, and by connecting the slits to each other, the air curtain C can be formed without interruption.

[0022] The injection ports of the bonding apparatus 3 of the fourth embodiment shown in FIG. 5 are configured by four slits S provided along the holding portion 5a, similar to the second embodiment. In this embodiment, compared with the second embodiment, there are two wide slits SL, and the wide slits SL are provided at positions facing each other with the holding portion 5a interposed therebetween, and the narrow slit SS is provided at a position orthogonal to the wide slit SL. With such a configuration, the inert gas injected from the wide slits SL provided at the facing positions flows between the semiconductor chip 1 and the substrate 2 and then flows toward the narrow slit SS, so that the air between the semiconductor chip 1 and the substrate 2 can be replaced with the inert gas at a high level. Note that also in the fourth embodiment, similar to the third embodiment with respect to the second embodiment, the slits S may be connected in an endless manner to form an air curtain C without interruption.

[0023] The bonding apparatus 3 of the fifth embodiment shown in FIG. 6 is configured by four slits S provided along the holding portion 5a, similar to the second embodiment. In this embodiment, similar to the fourth embodiment, there are two wide slits SL. However, in this embodiment, the wide slits SL are provided on two adjacent sides of the holding portion 5a, and the narrow slit SS is provided on two adjacent sides facing each other with the center of the holding portion 5a interposed therebetween. With such a configuration, the inert gas injected from the wide slits SL provided on two adjacent sides flows between the semiconductor chip 1 and the substrate 2 and then flows toward the narrow slits SS on the two opposing sides, so that the air between the semiconductor chip 1 and the substrate 2 can be replaced with the inert gas at a high level. Note that also in the fifth embodiment, similar to the third embodiment with respect to the second embodiment, the slits S may be connected in an endless manner to form an air curtain C without interruption.

[0024] The bonding apparatus 3 of the sixth embodiment shown in FIG. 7 has the holding portion 5a circular, and the semiconductor chip 1 is adsorbed and held at its central portion. And the injection port is constituted by a circular slit S that endlessly surrounds the holding portion 5a. In this embodiment, a part of the slit is a wide slit SL wider than other parts, and the other parts are narrow slits SS, and the width between the wide slit SL and the narrow slit SS is formed so as to gradually change. The length of the wide slit SL is formed at a ratio of about 20 to 25% with respect to the entire circumference of the slit S. With such a configuration, the inert gas injected from the wide slit SL passes between the semiconductor chip 1 and the substrate 2, and the air intervening between them can be replaced with the inert gas at a high level.

[0025] In each of the above-described embodiments, the injection port is constituted by a slit S formed between the holder 13 constituting the holding portion 5a and the frame 16 constituting the injection portion 5b. By varying the width of the slit S, the wide slit SL is used as a large injection port, and the narrow slit SS is used as a small injection port. On the other hand, even when the widths of the slits S are all set to the same width, if the required slit S and the other slits S inject inert gas at different injection flow rates, a configuration other than the above configuration can be adopted. For example, the gas supply means 17 supplies an inert gas at a large flow rate to the required slit S, uses the slit S as a large injection port, and supplies an inert gas at a smaller flow rate to the other slits S, whereby the slit S can be used as a small injection port. Further, the shape of the injection port is not the slit S, but is constituted by a plurality of injection nozzles provided along the holding portion 5a. By varying the injection flow rate from the inert gas injected from the required injection nozzle, each injection nozzle can be set as the large injection port or the small injection port. Even in this case, by arranging the large injection port and the small injection port as shown in each of the above embodiments, an air curtain C is formed around the joint portion between the semiconductor chip 1 and the substrate 2, and a flow of inert gas is formed between the semiconductor chip 1 and the substrate 2, similar to the above embodiments, and the air located therebetween can be replaced at a high level.

Explanation of Reference Numerals

[0026] 1 Semiconductor chip 2 Substrate 3 Bonding apparatus 4 Bonding stage 5 Bonding head 5a Holding portion 5b Injection portion 11 Laser light irradiation means 12 Plate 13 Holder 14 Negative pressure supply means 16 Frame 17 Gas supply means B Bump L Laser light S Slit (injection port) SL Wide slit (large injection port) SS Narrow slit (small injection port) C Air curtain

Claims

1. In a bonding apparatus comprising a bonding stage for supporting a substrate, a bonding head having a holding portion for holding a semiconductor chip, an injection port provided adjacent to the holding portion of the bonding head, and gas supply means for injecting an inert gas from the injection port, the injection port is provided so as to surround the holding portion of the bonding head, and a part of the injection port is a large injection port in which the injection flow rate of the inert gas is set larger than that of the small injection ports in other parts, an air curtain is formed by the inert gas injected from the large injection port and the small injection ports to surround the bonding portion between the semiconductor chip and the substrate, and an inert gas injected from the large injection port forms a flow that circulates between the semiconductor chip and the substrate, the injection port is formed by a slit provided along the holding portion in the bonding head, and the slit constituting the large injection port is set wider than the slit constituting the small injection port. The bonding apparatus is characterized by this.

2. The adsorption surface for adsorbing and holding the semiconductor chip in the holding portion of the bonding head is formed in a substantially rectangular shape, and the injection port is constituted by four slits provided along the four sides constituting the holding portion, The bonding apparatus according to claim 1, characterized in that one or two of these slits are the large injection ports.

3. In a bonding apparatus comprising a bonding stage for supporting a substrate, a bonding head having a holding portion for holding a semiconductor chip, an injection port provided adjacent to the holding portion of the bonding head, and gas supply means for injecting an inert gas from the injection port, the injection port is provided so as to surround the holding portion of the bonding head, and a part of the injection port is a large injection port in which the injection flow rate of the inert gas is set larger than that of the small injection ports in other parts, An air curtain is formed by the inert gas injected from the large injection port and the small injection port to surround the bonding portion between the semiconductor chip and the substrate, and an inert gas injected from the large injection port forms a flow that circulates between the semiconductor chip and the substrate. A bonding apparatus, characterized in that the injection port is formed so as to surround the holding portion of the bonding head in an endless shape.

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