Lid of Heat Treatment Chamber Using Inner Pumping

Abstract

To provide a lid assembly of a processing chamber and a process chamber including the same for improving the uniformity of deposited films.SOLUTION: A lid assembly 500 has a housing 375 with a gas dispersion channel 134 in fluid communication with a lid plate 170. A contoured bottom surface 160 of the lid plate defines a gap to a top surface of a gas distribution plate 125. A pumping channel 530 is formed between an upper outer peripheral contour 520 of the gas distribution plate and the lid plate.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure relate to the field of electronic device manufacturing. In particular, embodiments of the present disclosure are directed to an apparatus for delivering reaction gases in semiconductor device manufacturing.

Background Art

[0002]

[0002] Reliably producing sub-micron and below features is one of the key technologies for next-generation very large scale integration (VLSI) and ultra-large scale integration circuits (ULSI) of semiconductor devices. However, as the limits of circuit technology are pushed, the reduction in the dimensions of interconnects in VLSI and ULSI technologies has increased the requirements for processing power. The multi-level interconnects located at the heart of VLSI and ULSI technologies use precise processing of high aspect ratio features such as vias and other interconnects. The reliable formation of these interconnects is extremely important for the success of VLSI and ULSI and for the continuous efforts to increase the circuit density and quality of individual substrates.

[0003]

[0003] As circuit density increases, the widths of interconnects such as vias, trenches, contacts, and other features, as well as the dielectric material between them, decrease, while the thickness of the dielectric layer remains substantially constant, resulting in an increase in the aspect ratio of the height to width of the features. Many traditional deposition processes have difficulty filling sub-micron structures and providing good step coverage for surface features.

[0004]

[0004] Atomic layer deposition (ALD) is a deposition technique being explored for the deposition of material layers on features having a high aspect ratio. An example of an ALD process involves the sequential introduction of pulses of gases. For example, one cycle for the sequential introduction of pulses of gases can include a pulse of a first reactant gas, followed by a pulse of a purge gas and / or a pump exhaust, followed by a pulse of a second reactant gas, followed by a pulse of a purge gas and / or a pump exhaust. As used herein, the term "gas" is defined to include a single gas or a plurality of gases. The sequential introduction of separate pulses of a first reactant and a second reactant can result in the self-limiting alternate adsorption of monolayers of reactants on the surface of the substrate, and thus, form a monolayer of material for each cycle. Repeating this cycle can form a film of a predetermined thickness. The pulse of purge gas and / or pump exhaust between the pulse of the first reactant gas and the pulse of the second reactant gas serves to reduce the likelihood of gas-phase reactions of reactants due to excess amounts of reactants remaining in the chamber.

[0005]

[0005] In some chamber designs for ALD processing, precursors and gases are delivered using a funnel lid, and the precursor is dispensed through this lid to a plurality of injectors or distributors above the funnel-shaped lid. The injectors generate a circular motion of the injection gas, and the gas is dispersed through a funnel shape at the center of the lid. The rotational inertia of the gas / ALD precursor molecules disperses the molecules from the center to the edge, improving uniform deposition.

[0006]

[0006] It has been observed that the deposited film becomes non-uniform when the reactant gas is trapped between the lid plate and the showerhead during processing. Accordingly, there is a continuing need in the art for methods and apparatus for improving the uniformity of the deposited film.

Summary of the Invention

[0007]

[0007] One or more embodiments of the present disclosure are directed to a lid assembly of a processing chamber. The housing surrounds a gas dispersion channel that extends along a central axis of the housing. The gas dispersion channel has an upper portion and a lower portion. The lid plate is connected to the housing and has a contoured bottom surface that extends downwardly and outwardly from a central opening connected to the lower portion of the gas dispersion channel to a peripheral portion of the lid plate. The gas distribution plate is disposed below the lid plate and has an upper outer peripheral contour configured to form a pumping channel between the gas distribution plate and the lid plate. The gas distribution plate has an upper surface and a lower surface, and a plurality of apertures are disposed through the gas distribution plate from the upper surface to the lower surface. A gap is defined between the contoured bottom surface of the lid plate and the upper surface of the gas distribution plate.

Brief Description of the Drawings

[0008]

[0008] To enable a more detailed understanding of the above-described features of the present disclosure, a more detailed description of the present disclosure, briefly summarized above, is obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the present disclosure may admit other equally effective embodiments, and the accompanying drawings illustrate only typical embodiments of the present disclosure and should not be considered as limiting the scope of the present disclosure. The embodiments described herein are shown by way of example and not limitation in the accompanying drawings, and like reference numerals in the drawings indicate like elements.

[0009]

Figure 1

[0009] A schematic view of a processing chamber according to some embodiments of the present disclosure.

Figure 2

[0010] A schematic cross-sectional view of a processing chamber according to some embodiments of the present disclosure.

Figure 3

[0011] A schematic cross-sectional view of a lid assembly according to some embodiments of the present disclosure.

Figure 4

[0012] A - C are schematic views of apertures penetrating a gas distribution plate according to an embodiment of the present disclosure.

Figure 5

[0013] It is a schematic cross - sectional view of a lid assembly according to one or more embodiments of the present disclosure.

Figure 6

[0014] A is a schematic cross - sectional view of a lid plate according to one or more embodiments of the present disclosure.

[0015] B is a schematic cross - sectional view of a lid assembly according to one or more embodiments of the present disclosure.

Figure 7

[0016] It is a schematic cross - sectional view of a lid assembly according to one or more embodiments of the present disclosure.

Figure 8

[0017] It is a schematic cross - sectional view of a lid assembly according to one or more embodiments of the present disclosure.

[0010]

[0018] For ease of understanding, where possible, the same reference numbers are used to indicate the same elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation.

Mode for Carrying Out the Invention

[0011]

[0019] Before describing some exemplary embodiments of the present disclosure, it should be understood that the present disclosure is not limited to the details of the configurations or processing steps presented in the following description. The present disclosure allows for other embodiments and can be implemented or executed in various ways.

[0012]

[0020] As used herein, the term "substrate" refers to any substrate on which film processing is performed during a manufacturing process or the surface of a material formed on a substrate. For example, the substrate surface on which processing can be performed may be made of materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. The substrate includes, but is not limited to, semiconductor wafers. The substrate can be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal, and / or bake the substrate surface. In the present disclosure, in addition to the direct film processing on the surface of the substrate itself, any of the disclosed film processing steps can be performed on a lower layer formed on the substrate, which will be disclosed in more detail hereinafter, and the term "substrate surface" is intended to include such a lower layer as the context indicates. Thus, for example, when a film / layer or a partial film / layer is deposited on the substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0013]

[0021] The terms "precursor", "reactant", "reaction gas", etc., as used in this specification and the claims, are used interchangeably and refer to any gas species capable of reacting with the substrate surface.

[0014]

[0022] Embodiments of the present disclosure provide an apparatus and method for cleaning a substrate processing chamber, such as an atomic layer deposition (ALD) chamber, and for depositing materials, for example, during an ALD process. Embodiments include a substrate processing chamber and a gas supply system that may include a remote plasma source and a gas distribution plate. The following description of the processing chamber is provided for context and illustrative purposes and should not be construed or understood as limiting the scope of the present disclosure.

[0015]

[0023] FIG. 1 is a schematic view of a substrate processing chamber (processing chamber 100) including a gas supply system 130 adapted for an ALD process, according to some embodiments of the present disclosure. FIG. 2 is a cross-sectional view of the processing chamber 100. The processing chamber 100 includes a chamber body 102, and the chamber body 102 has a processing volume under an internal chamber lid assembly 132. The slit valve 108 of the processing chamber 100 provides access for a robot (not shown) to deliver and remove a substrate 110, such as a 200 mm or 300 mm semiconductor wafer or glass substrate, between the processing chamber 100. The chamber liner 177 is disposed along the walls of the processing chamber 100 to protect the chamber from corrosive gases used during processing / washing.

[0016]

[0024] The substrate support 112 supports the substrate 110 on the substrate receiving surface 111 of the processing chamber 100. The substrate support 112 is attached to a lift motor 114 for raising and lowering the substrate support 112 and the substrate 110 disposed on the substrate support. The lift plate 116 (shown in FIG. 2) is connected to a lift motor 118 and is attached to the processing chamber 100 to move a lift pin 120 movably disposed through the substrate support 112 up and down. The lift pin 120 raises and lowers the substrate 110 above the surface of the substrate support 112. The substrate support 112 may include a vacuum chuck (not shown), an electrostatic chuck (not shown), or a clamp ring (not shown) for fixing the substrate 110 to the substrate support 112 during the deposition process.

[0017]

[0025] The temperature of the substrate support 112 can be adjusted to control the temperature of the substrate 110. For example, the substrate support 112 may be heated using an embedded heating element, such as a resistive heater (not shown), or using radiant heat, such as a heating lamp (not shown) disposed above the substrate support 112. A purge ring 122 can be disposed on the substrate support 112 to define a purge channel 124 that provides a purge gas to the peripheral portion of the substrate 110 to prevent deposition on the peripheral portion of the substrate 110.

[0018]

[0026] The gas supply system 130 is disposed on the upper portion of the chamber body 102 to provide a gas such as a processing gas and / or a purge gas to the chamber 100. A vacuum system (not shown) communicates with the pumping channel 179 to evacuate any desired gas from the processing chamber 100 and to help maintain a desired pressure or pressure range inside the processing chamber 100.

[0019]

[0027] In some embodiments, the chamber lid assembly 132 includes a gas dispersion channel 134 that extends through a central portion of the chamber lid assembly 132. As shown in FIGS. 1 and 2, the gas dispersion channel 134 extends vertically toward the substrate receiving surface 111 and also extends from the lid plate 170 to the bottom surface 160 along the central axis 133 of the gas dispersion channel 134. In some embodiments, the upper portion of the gas dispersion channel 134 is substantially cylindrical along the central axis 133, and the lower portion of the gas dispersion channel 134 is tapered away from the central axis 133. The bottom surface 160 is sized and shaped to substantially cover the substrate 110 disposed on the substrate receiving surface 111 of the substrate support 112. The bottom surface 160 is tapered from the outer edge of the lid plate 170 toward the gas dispersion channel 134. The gas supply system 130 can provide one or more gases to the gas dispersion channel 134 to process the substrate 110. In some embodiments, the gas supply system 130 may be connected to the gas dispersion channel 134 through one gas inlet. In some embodiments, for example, as shown in FIG. 3, the gas supply system may be connected to the gas dispersion channel 134 through a plurality of inlets.

[0020]

[0028] As shown in FIG. 3, the circular gas flow 174 showing the flow of the processing gas through the gas dispersion channel 134 can include various types of flow patterns. In some embodiments, the processing gas can be rotated around the central axis 133 of the gas dispersion channel 134 while passing through the dispersion channel. In such embodiments, the circular gas flow 174 can include various types of circular flow patterns such as a vortex pattern, a three-dimensional spiral pattern, a spiral pattern, or derivatives thereof.

[0021]

[0029] Providing a circular gas flow 174 is beneficial for many applications, but the inventors have discovered that in some applications, a circular gas flow can lead to non-uniform processing results. The inventors have observed that the gas flow can result in a donut-shaped deposition profile near the center of the substrate 110 being processed. The donut-shaped profile can be caused by the funnel shape of the gas dispersion channel 134. Thus, in some embodiments, the processing chamber 100 further includes a gas distribution plate 125 having a plurality of apertures 126 therethrough. The gas distribution plate 125 extends to the surface of the gas dispersion channel 134 such that the only path for the gas from the gas dispersion channel 134 to the substrate is through the plurality of apertures 126 of the gas distribution plate 125. The gas distribution plate 125 advantageously creates a choked flow of gas through the gas distribution plate 125, resulting in a more uniform deposition onto the substrate 110 and thus substantially eliminating the donut-shaped deposition caused by the rotational flow of the gas.

[0022]

[0030] In some embodiments, the gas distribution plate 125 is formed of a non-corrosive ceramic material such as, for example, aluminum oxide or aluminum nitride. In some embodiments, each of the plurality of apertures 126 may have an equivalent fluid conductance. In some embodiments, the density of the plurality of apertures 126 (e.g., the number of apertures per unit area or the size of the aperture openings) may vary across the gas distribution plate 125 to achieve a desired deposition profile on the substrate 110. For example, by disposing a higher density of apertures 126 at the center of the gas distribution plate 125 and increasing the deposition rate at the center of the substrate relative to the edges of the substrate, the deposition uniformity can be further improved.

[0023]

[0031] The plurality of apertures 126 are shown as cylindrical through-holes, but may have different profiles. FIGS. 4A - C show different non-limiting embodiments of the profiles of the plurality of apertures 126. In the embodiment shown in FIG. 4A, the aperture 126 is a cylindrical through-hole having a curved edge 402 surrounding the aperture. In the embodiment shown in FIG. 4B, the aperture 126 has an upper portion 404 that tapers inwardly towards the center of the aperture, a cylindrical central portion 405 that extends perpendicular to the upper surface 127 of the gas distribution plate 125, and a lower portion 406 that tapers outwardly from the center of the aperture. In the embodiment shown in FIG. 4C, the aperture 126 has an upper portion 408 having a dish-shaped hole, a cylindrical central portion 409 that extends perpendicular to the upper surface 127 of the gas distribution plate 125, and a lower portion 410 that tapers outwardly from the center of the aperture. Alternatively, other profiles of the plurality of apertures 126 may be used to achieve optimal deposition uniformity during processing of the substrate 110.

[0024]

[0032] Although not wishing to be bound by theory, the inventors believe that by having the diameter of the gas dispersion channel 134 be constant from the top of the gas dispersion channel 134 to a first point along the central axis 133 and increase from the first point of the gas dispersion channel 134 to the bottom 135, the adiabatic expansion of the gas passing through the gas dispersion channel 134 can be reduced, which can help control the temperature of the process gas included in the circular gas flow 174. For example, a rapid adiabatic expansion of the gas delivered into the gas dispersion channel 134 can result in a decrease in the temperature of the gas and can cause condensation of the gas and formation of droplets. On the other hand, the tapered gas dispersion channel 134 is thought to provide a smaller adiabatic expansion of the gas. Thus, more heat can be transferred to or from the gas, and by doing so, the temperature of the gas can be more easily controlled by controlling the temperature of the chamber lid assembly 132. The gas dispersion channel 134 can be tapered and can include one or more tapered inner surfaces such as a tapered plane, concave surface, convex surface, or a combination thereof, or can include sections of one or more tapered inner surfaces (i.e., a tapered portion and a non-tapered portion).

[0025]

[0033] As shown in FIG. 3, the upper part of the gas dispersion channel 134 is defined by an insert 300 disposed in the inner region of the housing 375. The insert 300 includes a cap 302 at the upper part of the insert 300 and a central passage that at least partially defines the gas dispersion channel 134. The cap 302 extends over the housing 375 to hold the insert 300 in a predetermined position. The insert 300 and the cap 302 include a plurality of O-rings 385 disposed between the insert 300 and the housing 375 to ensure a proper seal. The insert 300 includes a plurality of circumferential openings that, when the insert 300 is inserted into the housing 375, form a corresponding plurality of circumferential channels 360, 365, 370. The plurality of circumferential channels 360, 365, 370 are fluidly connected to the gas dispersion channel 134 via a corresponding plurality of holes 340, 345, 350. In the embodiment shown in FIG. 3, the gas supply system 130 is connected to the gas dispersion channel 134 via a plurality of gas supply lines 310, 315, 320. The gas supply lines 310, 315, 320 are fluidly connected to the plurality of circumferential channels 360, 365, 370 to provide one or more gases to the gas dispersion channel 134.

[0026]

[0034] Returning to FIGS. 1 and 2, the processing chamber 100 further includes a chamber cleaning system that includes a remote plasma source (RPS) 190, a separation collar 192 having one end connected to the RPS 190 and the opposite end connected to the cap 302, a heater plate 198 connected to the upper surface of the lid plate 170, and a cleaning gas (i.e., purge gas) source 197 fluidly connected to the RPS 190. The cleaning gas source can include any gas suitable for forming a plasma for cleaning the processing chamber 100. In some embodiments, for example, the cleaning gas may be nitrogen trifluoride (NF3). The separation collar 192 includes an inner channel 193 fluidly connected to the gas dispersion channel 134 through a plurality of holes 285 disposed in the central portion of the cap 302, and flows the plasma from the RPS 190 through the gas dispersion channel 134 into the reaction zone 164. The heater plate 198 can be formed of stainless steel and can include a plurality of resistive heating elements dispersed throughout the plate.

[0027]

[0035] Typically, to rapidly purge the first gas from the gas dispersion channel 134 and the reaction zone 164, after the first gas is supplied to the gas dispersion channel 134 by the gas supply system 130, a cleaning gas is flowed through the gas dispersion channel 134 and the reaction zone 164. Subsequently, a second gas is provided to the gas dispersion channel 134 by the gas supply system 130, the cleaning gas is flowed again through the gas dispersion channel 134 into the reaction zone 164, and the second gas is rapidly purged from the gas dispersion channel 134 and the reaction zone 164. However, the addition of the gas distribution plate 125 chokes the flow of the cleaning gas into the pumping channel 179 and prolongs the cleaning process. Therefore, the inventors incorporated an exhaust system 180 having an exhaust duct 184 with a first end 186 connected to the separation collar 192 and a second end 188 connected to the pumping channel 179, respectively. A valve 182 is disposed in the exhaust duct 184 to selectively fluidly connect the exhaust duct 184 to the internal channel 193. In some embodiments, for example, the valve 182 may be a plunger type valve having a plunger 202 movable between a first position (shown in FIG. 2) that fluidly connects the exhaust duct 184 to the internal channel 193 and a second position that seals the exhaust duct 184 from the internal channel 193. Each time the cleaning gas flows through the gas dispersion channel 134 and the reaction zone 164, the valve 182 opens and the cleaning gas is rapidly discharged into the pumping channel 179.

[0028]

[0036] If the pressure inside the processing chamber 100 exceeds the pressure inside the RPS 190, the processing gas may flow up to the RPS 190 and potentially damage the RPS 190. The plurality of holes 285 function as choke points to prevent the backflow of the processing gas from flowing upward into the RPS 190 through the inner channel 193. The separation collar 192 can be formed of any material that does not react with the cleaning gas being used. In some embodiments, the separation collar 192 may be formed of aluminum when the cleaning gas is NF3. In some embodiments, the separation collar 192 and the insert 300 may be formed of aluminum and coated with a coating to prevent corrosion of the separation collar 192 and the insert 300 by the corrosive gas during use. For example, the coating may be formed of nickel or aluminum oxide.

[0029] As shown in FIG. 3, the RPS 190 operates at a temperature of about 40° C. or less. To advantageously insulate the RPS 190 from the heat generated within the processing chamber 100, a thermal separation ring 394 is disposed between the separation collar 192 and the cap 302. The thermal separation ring 394 is formed of a metal having a low thermal conductivity (e.g., lower than the thermal conductivity of the separation collar 192 and the cap 302). Additionally, an O-ring 385 can be disposed between the separation collar 192 and the cap 302 to further reduce the contact area between the separation collar 192 and the cap 302. The combination of the thermal separation ring 394 and the O-ring 385 acts as a thermal choke to ensure that the heat generated within the processing chamber 100 does not adversely affect the RPS 190.

[0030]

[0038] In some embodiments, when the lid plate 170 is heated above 100° C., the processing chamber 100 may include a differential pumping line 250 to ensure that process gases or by-products trapped between the O-rings 385 are exhausted into the pumping channel 179. The differential pumping line 250 is connected to the lid plate 170 at a first end and to the housing 375 at a second end opposite the first end. The differential pumping line is fluidly connected to the gas dispersion channel 134 and to one or more channels 260 formed in the region between two or more O-rings 385. When the valve 182 opens to exhaust the gas dispersion channel 134, the differential pumping line exhausts the gas trapped between the O-rings 385.

[0031]

[0039] Returning to FIG. 3, a portion of the bottom surface 160 of the chamber lid assembly 132 has a contour that slopes downward and outward or is angled downward and outward from a central opening connected to the gas dispersion channel 134 to the peripheral portion of the chamber lid assembly 132, and can help improve the velocity profile of the gas flow from the gas dispersion channel 134 across the surface of the substrate 110 (i.e., from the center of the substrate to the edge of the substrate). The bottom surface 160 can include one or more surfaces such as a flat surface, a concave surface, a convex surface, or combinations thereof. In one embodiment, the bottom surface 160 is a convex funnel shape.

[0032]

[0040] In one embodiment, the bottom surface 160 is inclined downward and outward toward the edge of the substrate receiving surface 111, which helps reduce fluctuations in the velocity of the processing gas moving between the bottom surface 160 of the chamber lid assembly 132 and the substrate 110 and helps provide uniform exposure of the surface of the substrate 110 to the reaction gas. The components and parts of the chamber lid assembly 132 can include materials such as stainless steel, aluminum, nickel-plated aluminum, nickel, their alloys, or other suitable materials. In one embodiment, the lid plate 170 can be independently fabricated from a metal such as aluminum, aluminum alloy, steel, stainless steel, their alloys, or combinations thereof by manufacturing, machining, forging, or other methods.

[0033]

[0041] In some embodiments, the inner surface 131 of the gas dispersion channel 134 and the bottom surface 160 of the chamber lid assembly 132 can include a mirror-polished surface that aids the flow of gas along the bottom surface 160 of the gas dispersion channel 134 and the chamber lid assembly 132.

[0034]

[0042] As shown in FIGS. 1-3, during the processing operation, the substrate 110 is delivered into the processing chamber 100 through the slit valve 108 by a robot (not shown). The substrate 110 is positioned on the substrate support 112 by the cooperation of the lift pins 120 and the robot. The substrate support 112 raises the substrate 110 to closely oppose the lower surface of the gas distribution plate 125. The first gas flow can be injected into the gas dispersion channel 134 of the processing chamber 100 by the gas supply system 130 together with or separately from (i.e., pulsed) the second gas flow. The first gas flow can include a continuous flow of purge gas from a purge gas source and a pulse of reaction gas from a reaction gas source, or a pulse of reaction gas from a reaction gas source and a pulse of purge gas from a purge gas source. The second gas flow can include a continuous flow of purge gas from a purge gas source and a pulse of reaction gas from a reaction gas source, or a pulse of reaction gas from a reaction gas source and a pulse of purge gas from a purge gas source.

[0035]

[0043] The circular gas flow 174 proceeds through the gas dispersion channel 134 and then through the plurality of apertures 126 of the gas distribution plate 125. The gas is then deposited on the surface of the substrate 110. The bottom surface 160 of the chamber lid assembly 132 that slopes downward helps to reduce fluctuations in the velocity of the gas flow across the surface of the gas distribution plate 125. Excess gas, by-products, etc. flow into the pumping channel 179 and are then exhausted from the processing chamber 100. Throughout the processing operation, the heater plate 198 can heat the chamber lid assembly 132 to a predetermined temperature to heat the solid by-products accumulated on the walls of the processing chamber 100 (or the processing kit disposed within the chamber). As a result, the accumulated solid by-products vaporize. The vaporized by-products are exhausted by a vacuum system (not shown) and the pumping channel 179. In some embodiments, the predetermined air temperature is 150 °C or higher.

[0036]

[0044] Some process conditions can cause step coverage problems, for example, due to residual precursors in the gas supply system that enable gas-phase reactions. In a typical ALD process, gas-phase reactions are usually avoided. Thus, some embodiments of the present disclosure provide backside pumping capabilities to the processing chamber lid and the processing chamber to the chamber lid. The apparatus of some embodiments is a thermal chamber lid to which a plasma source is not connected. In some embodiments, the chamber lid is configured to have a remote plasma source that provides a remote plasma to the processing chamber.

[0037]

[0045] One or more embodiments of the present disclosure advantageously provide an apparatus that improves the step coverage of a film on a surface feature. One or more embodiments of the present disclosure advantageously provide an apparatus that adds backside pumping to remove residual reaction gases. In some embodiments, the apparatus helps to more efficiently pump the chemicals trapped between the lid plate and the shower head.

[0038]

[0046] Figure 5 shows a lid assembly 500 of a processing chamber according to one or more embodiments of the present disclosure. The housing 375 surrounds a gas dispersion channel 134 that extends along a central axis 133 of the housing 375. The gas dispersion channel 134 has an upper portion 134a and a lower portion 134b.

[0039]

[0047] The lid plate 170 is connected to the housing 375 and has a contoured bottom surface 160. The contoured bottom surface 160 extends downwardly and outwardly from a central opening 136 connected to the lower portion 134b of the gas dispersion channel 134 to an outer peripheral portion 138 of the lid plate 170. In the illustrated embodiment, the outer peripheral portion 138 refers to an outer portion of the contoured bottom surface 160 adjacent to the outer peripheral edge 137.

[0040]

[0048] The lid assembly 500 includes a gas distribution plate 125 disposed below the lid plate 170. The gas distribution plate 125 has an upper surface 128 and a bottom surface 129, and a plurality of apertures 126 penetrate the gas distribution plate 125 from the upper surface 128 to the bottom surface 129.

[0041]

[0049] The gas distribution plate 125 has an upper outer peripheral contour 520 configured to form a pumping channel 530 between the gas distribution plate 125 and the lid plate 170. The pumping channel 530 shown in the embodiment of FIG. 5 is defined between an outer peripheral bottom surface 532 of the lid plate 170 and an upper outer peripheral contour 520 of the gas distribution plate 125. In some embodiments, the outer peripheral bottom surface 532 of the lid plate 170 is farther from the central axis 133 than the outer peripheral portion 138 of the contoured bottom surface 160. In other words, in some embodiments, the outer peripheral bottom surface 532 surrounds the contoured bottom surface 160.

[0042]

[0050] The contoured bottom surface 160 of the lid plate 170 and the upper surface 128 of the gas distribution plate 125 define a gap G. Since the bottom surface 160 is contoured, the gap G is variable as a function of the distance from the central axis 133. In some embodiments, the inner zone Z I is the intermediate zone Z Mhas a larger gap and an intermediate zone Z M is the outer zone Z O and has a larger gap than. FIG. 6A shows a schematic cross-sectional view of a lid plate 170 having a contour bottom surface 160 similar to that shown in FIG. 5. FIG. 6B is a schematic cross-sectional view of the lid plate 170 and the gas distribution plate 125 of FIG. 5, showing the relationship of the gap G with respect to the radial distance from the central axis 133. In FIG. 6A, the contour bottom surface 160 of the lid plate 170 is the inner zone Z I , the intermediate zone Z M , and the outer zone Z O are separated into three zones. In this embodiment, in the intermediate zone Z M , the contour bottom surface 160 is flat so that the gap G M is uniform. In the partial cross-sectional view of FIG. 6B, the gap G M in the intermediate zone Z M is uniform from the left edge to the right edge of the intermediate zone Z M . In the inner zone Z I , the gap G I is a function of the distance x measured from the central axis 133. FIG. 6B shows two measured values of the gap G I dx in the inner zone Z I . In the outer zone Z O , the gap G O is a function of the distance x measured from the central axis 133. FIG. 6B shows one measured value of the gap G O dx in the outer zone Z O . Those skilled in the art will understand that the illustrated measured values are for illustrative purposes only. In FIG. 6B, the apertures 126 of the gas distribution plate 125 are omitted for clarity.

[0043]

[0051] Referring again to FIG. 6B, in some embodiments, the inner zone Z I is defined from the central axis 133 of the lid plate 170 to an inner zone radial distance RI from the central axis 133. The intermediate zone Z M is from the inner zone radial distance R I to an intermediate zone radial distance R from the central axis 133 Mis defined up to the outer zone Z O is the intermediate zone radial distance Z M from the outer zone radial distance R at the outer peripheral edge 137 of the bottom surface 160 of the contour O up to.

[0044]

[0052] The intermediate zone Z M can be any suitable size measured with respect to the total radial distance from the central axis 133 to the outer peripheral edge 137. In some embodiments, the distance from the central axis 133 to the outer peripheral edge 137 is about 50 mm, 100 mm, 150 mm, or 200 mm or more. In some embodiments, the distance from the central axis 133 to the outer peripheral edge 137 is greater than the radius of the substrate being processed. For example, in an embodiment where a 300 mm substrate is being processed, the radial distance from the central axis to the edge of the substrate is 150 mm assuming the substrate is centered. In this example, the distance from the central axis 133 to the outer peripheral edge 137 is 150 mm or more.

[0045]

[0053] In some embodiments, the distance from the central axis 133 to the intermediate zone radial distance Z M is about 50 mm, 100 mm, 150 mm, or 200 mm or more. In some embodiments, the distance from the central axis 133 to the intermediate zone radial distance Z M is greater than the radius of the substrate being processed. For example, in an embodiment where a 300 mm substrate is being processed, the radial distance from the central axis to the edge of the substrate is 150 mm assuming the substrate is centered. In this example, the distance from the central axis 133 to the intermediate zone radial distance Z M is, for example, 150 mm or more.

[0046]

[0054] In some embodiments, the size of the intermediate zone Z M of the lid plate 170 is in the range of about 10% to about 90% of the distance from the central axis to the outer zone radial distance R O up to. In some embodiments, the intermediate zone Z MThe size of is in the range of about 20% to about 80%, or about 30% to about 70%, or about 40% to about 60% of the distance from the central axis 133 to the outer zone radial distance R O up to.

[0047]

[0055] In some embodiments, the substantially uniform gap in the intermediate zone Z M is in the range of about 0.1 inch to about 2 inches (about 2.5 mm to about 51 mm). When used in this way, the term "substantially uniform gap" means that the gap at any radial distance within the intermediate zone Z M is within 5%, 2%, 1% or 0.5% of the average gap in the intermediate zone Z M .

[0048]

[0056] In some embodiments, the outer zone Z O is inclined from the intermediate zone Z M to the front surface 161 of the lid plate 170. In some embodiments, the outer zone Z O is inclined from the intermediate zone Z M to the upper surface 128 of the gas distribution plate 125. The inclination of the outer zone Z M with respect to the flat intermediate zone Z O forms an outer zone angle θ as shown in FIG. 7. In some embodiments, the outer zone angle is in the range of about 15° to about 75°, or about 30° to about 60°, or about 40° to about 50°.

[0049]

[0057] As shown in FIGS. 5 and 7, in some embodiments, the outer zone Z O of the contour bottom surface 160 is connected to the pumping channel 530 through the pumping holes 525 formed in the lid plate 170. In some embodiments, the pumping holes 525 are formed in the outer zone Z O of the contour bottom surface 160. The number of pumping holes 525 can be varied, for example, based on the size of the lid plate 170. In some embodiments, there are about 24 to about 144 pumping holes 525.

[0050]

[0058] As shown in FIG. 7, the pumping holes are located in the outer zone Z of the contoured bottom surface 160. O at an angle φ. In some embodiments, the angle φ is in the range of about 75° to about 105°, or in the range of about 80° to about 100°, or in the range of about 85° to about 95°, or in the range of about 88° to about 92°.

[0051]

[0059] The lid assembly 500 in some embodiments includes at least one pump port 560 in fluid communication with the pumping channel 530, as shown in FIG. 5. The pump port 560 can be a separate component connected to the lid plate 170. In some embodiments, there are two or more pump ports 560 connected to the pumping channel 530 at different radial locations. In some embodiments, each of the pump ports is connected to a separate vacuum source for evacuation purposes. In some embodiments, the pump ports are in fluid communication with a single vacuum source. In some embodiments, the pump ports are in fluid communication with the pumping channel 179 (see FIG. 1).

[0052]

[0060] 8 illustrates a lid assembly 600 according to one or more embodiments of the present disclosure. The contoured bottom surface 160 of the lid plate 170 slopes from an inner edge 610 of the contoured bottom surface 160 to the outer perimeter edge 137.

[0053]

[0061] The slope of contoured bottom surface 160 creates a gap G that decreases until it is at a minimum at peripheral edge 137. In some embodiments, the minimum gap G is in the range of about 0.01 inches to about 1 inch (about 0.25 mm to about 25.4 mm), or in the range of about 0.05 inches to about 0.5 inches (about 1.25 mm to about 12.7 mm).

[0054]

[0062] Further embodiments of the present disclosure are directed to a processing chamber incorporating lid assembly 500 or lid assembly 600.

[0055]

[0063] In the foregoing specification, embodiments of the present disclosure have been described with reference to specific exemplary embodiments. It will be apparent that various modifications may be made without departing from the broader spirit and scope of the embodiments of the present disclosure as set forth in the claims. Accordingly, the specification and drawings are to be regarded as illustrative rather than restrictive.

Claims

1. A housing surrounding a gas dispersion channel extending along a central axis, the housing having an upper and a lower part of the gas dispersion channel; A lid plate connected to the housing, the lid plate having a contoured bottom surface extending downwardly and outwardly from a central opening connected to the lower part of the gas dispersion channel to a peripheral portion of the lid plate; and A gas distribution plate disposed below the lid plate, the gas distribution plate having an upper outer peripheral contour configured to form a pumping channel between the gas distribution plate and the lid plate, and having a top surface and a bottom surface having a plurality of apertures penetrating the gas distribution plate from the top surface to the bottom surface, the contoured bottom surface of the lid plate and the top surface of the gas distribution plate defining a gap, the gas distribution plate comprising, The contoured bottom surface of the lid plate includes an inner zone, an intermediate zone and an outer zone, The inner zone is defined from the central axis of the lid plate to an inner zone radial distance from the central axis, the intermediate zone is defined from the inner zone radial distance to an intermediate zone radial distance from the central axis, and the outer zone is defined from the intermediate zone radial distance to an outer zone radial distance at the outer peripheral edge of the contoured bottom surface, The inner zone of the contoured bottom surface of the lid plate has a larger gap than the intermediate zone of the contoured bottom surface of the lid plate, and the intermediate zone of the contoured bottom surface of the lid plate has a larger gap than the outer zone of the contoured bottom surface of the lid plate, The outer zone is inclined from the intermediate zone to the top surface of the gas distribution plate to form an outer zone angle, The outer zone of the contoured bottom surface is connected to the pumping channel through a pumping hole formed in the lid plate, A lid assembly of a processing chamber.

2. The lid assembly according to claim 1, wherein the intermediate zone of the contoured bottom surface forms a substantially uniform gap.

3. The lid assembly according to claim 2, wherein the substantially uniform gap ranges from 2.54 mm (0.1 inch) to 50.8 mm (2 inches).

4. The lid assembly according to claim 1, wherein the middle zone occupies a range from 10% to 90% of the distance from the central axis to the radial distance of the outer zone.

5. The lid assembly according to claim 1, wherein the pumping holes are formed in the outer zone of the bottom surface of the contour.

6. A housing surrounding a gas dispersion channel extending along a central axis, the gas dispersion channel having an upper part and a lower part; A lid plate connected to the housing, the lid plate having a bottom surface of the contour extending downward and outward from a central opening connected to the lower part of the gas dispersion channel to a peripheral portion of the lid plate; and A gas distribution plate disposed below the lid plate, the gas distribution plate having an upper outer peripheral contour configured to form a pumping channel between the gas distribution plate and the lid plate, and having an upper surface and a bottom surface having a plurality of openings penetrating the gas distribution plate from the upper surface to the bottom surface, and a gap is defined between the bottom surface of the contour of the lid plate and the upper surface of the gas distribution plate, the gas distribution plate comprising the bottom surface of the contour of the lid plate includes an inner zone, a middle zone and an outer zone, the inner zone is defined from the central axis of the lid plate to a radial distance of the inner zone from the central axis, the middle zone is defined from the radial distance of the inner zone to a radial distance of the middle zone from the central axis, and the outer zone is defined from the radial distance of the middle zone to a radial distance of the outer zone at the outer peripheral edge of the bottom surface of the contour, the inner zone of the bottom surface of the contour of the lid plate has a larger gap than the middle zone of the bottom surface of the lid plate, and the middle zone of the bottom surface of the contour of the lid plate has a larger gap than the outer zone of the bottom surface of the lid plate, the outer zone is inclined from the middle zone to the front surface of the lid plate to form an outer zone angle, the outer zone of the bottom surface of the contour is connected to the pumping channel through pumping holes formed in the lid plate A lid assembly for a processing chamber, wherein the pumping holes intersect the outer zone of the bottom surface of the contour at an angle in the range of 85° to 95°. **Claim 7** The lid assembly according to claim 1, wherein there are from 24 to 144 pumping holes in the outer zone. **Claim 8** The lid assembly according to claim 1, further comprising at least one pump port in fluid connection with the pumping channel. **Claim 9** A processing chamber comprising the lid assembly according to claim 1. **Claim 10** The processing chamber according to claim 9, further comprising a remote plasma source fluidly connected to the gas dispersion channel.

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