Inspection probe head

Abstract

To provide an inspection probe for easily inspecting a semiconductor element in a non-contact manner. 【Solution means】The inspection probe head is an inspection probe head provided with a radiation antenna, which is attached to the main surface side of the substrate and connected to the power supply terminal of the semiconductor element to supply power to the semiconductor element. A power supply connector, and a receiving antenna that is attached to the main surface side of the substrate and receives the electromagnetic wave signal radiated from the radiation antenna of the semiconductor element by connecting the power supply connector and the power supply terminal. Further, the receiving antenna is formed on the main surface of the substrate.

Description

Technical Field

[0001] The present invention relates to an inspection connection device for receiving an electromagnetic wave signal emitted from a semiconductor element, and particularly relates to a method of receiving an electromagnetic wave signal in addition to the conventional inspection of a semiconductor element by an electrical signal, and relates to a method of transmitting and receiving an electromagnetic wave signal between semiconductor elements, between chiplets, or inside a chiplet.

Background Art

[0002] Recently, with the miniaturization and high-speed operation of electronic devices, the wiring pitch of semiconductor elements used therein has also been miniaturized, and the clock speed and other speeds have increased.

[0003] In particular, in logic devices and the like, the process technology is approaching 2 nm (nanometers), but the pitch of a multi-pin probe card is 40 μm (micrometers), resulting in a large gap.

[0004] Furthermore, the clock speed of microprocessors has reached 28 GHz (gigahertz), but it has become difficult to evaluate semiconductor elements to be inspected with current testers as inspection devices and multi-pin probe cards.

[0005] Therefore, there are problems such as the inspection device for semiconductor elements becoming a bottleneck in the progress of semiconductor elements, the development cost of the inspection device increasing, and the preparation for inspection taking a long time.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] In the above-mentioned Patent Document 1, the probe includes a coil, but it is not for inspecting an electromagnetic wave signal, and the inspection method thereof is not described.

[0008] The present invention relates to an inspection connection device for receiving an electromagnetic wave signal emitted from a semiconductor element, and particularly relates to a method for inspecting an electromagnetic wave signal in addition to the conventional inspection of an electrical signal of a semiconductor element, and relates to a method for transmitting and receiving an electromagnetic wave signal between semiconductor elements, between chiplets, and inside a chiplet.

Means for Solving the Problems

[0009] The inspection probe head according to the present invention is an inspection probe head provided with a first radiation antenna, and includes a substrate having a main surface, and a power supply connector attached to the main surface side of the substrate and connected to a power supply terminal of the semiconductor element to supply power to the semiconductor element, and a first receiving antenna attached to the main surface side of the substrate and receiving an electromagnetic wave signal radiated from the first radiation antenna of the semiconductor element by connecting the power supply connector and the power supply terminal. Further, the first receiving antenna is characterized in that it is formed on the main surface of the substrate.

[0010] In the inspection probe head according to the present invention, an electromagnetic wave signal from a semiconductor element can be effectively received.

[0011] Further, in the inspection probe head according to the present invention, the first receiving antenna may include a first loop antenna having a first radius and a second loop antenna having a second radius different from the first radius, and the second loop antenna may be arranged inside the first loop antenna.

[0012] In the inspection probe head according to the present invention, electromagnetic wave signals of two types of frequencies from a semiconductor element can be effectively received.

[0013] In the probe head for inspection according to the present invention, the first receiving antenna may include a first receiving antenna and a second receiving antenna disposed laterally of the first receiving antenna.

[0014] In the probe head for inspection according to the present invention, electromagnetic wave signals of two types of frequencies from a semiconductor element can be effectively received.

[0015] In the probe head for inspection according to the present invention, the first receiving antenna may have a first loop antenna and a second loop antenna laminated via an insulating layer in a direction intersecting the extending direction of the main surface.

[0016] In the probe head for inspection according to the present invention, the reception of electromagnetic wave signals from a semiconductor element can be enhanced.

[0017] The probe head for inspection according to the present invention is a probe head for inspection provided with a first radiation antenna, formed on a substrate having a main surface, and including a plurality of inspection units capable of simultaneously measuring a plurality of the semiconductor elements formed on a semiconductor wafer. The inspection unit is attached to the main surface side of the substrate, and includes a power supply connector for supplying power to the semiconductor element by connecting to a power supply terminal of the semiconductor element, and a receiving antenna attached to the main surface side of the substrate and receiving an electromagnetic wave signal radiated from the radiation antenna of the semiconductor element by connecting the power supply connector and the power supply terminal.

[0018] In the probe head for inspection according to the present invention, electromagnetic wave signals from a plurality of semiconductor elements can be simultaneously received.

[0019] In the probe head for inspection according to the present invention, there is provided a probe head for inspection including a radiation antenna and a reception antenna, the probe head including a substrate having a main surface, a power supply connector attached to the main surface side of the substrate and connected to a power supply terminal of the semiconductor element for supplying power to the semiconductor element, a probe reception antenna and a probe radiation antenna attached to the main surface side of the substrate, the probe reception antenna being configured to be able to receive a first electromagnetic wave signal radiated from the radiation antenna of the semiconductor element by connecting the power supply connector and the power supply terminal, and the probe radiation antenna being configured to radiate a second electromagnetic wave signal that can be received by the reception antenna provided in the semiconductor element by connecting the power supply connector and the power supply terminal.

[0020] In the probe head for inspection according to the present invention, bidirectional communication can be performed with a semiconductor element by an electromagnetic wave signal.

Effects of the Invention

[0021] The probe head for inspection according to the present invention is a probe head for inspection including a first radiation antenna, the probe head including a substrate having a main surface, a power supply connector attached to the main surface side of the substrate and connected to a power supply terminal of the semiconductor element for supplying power to the semiconductor element, and a first reception antenna attached to the main surface side of the substrate and configured to receive an electromagnetic wave signal radiated from the first radiation antenna of the semiconductor element by connecting the power supply connector and the power supply terminal. Further, the first reception antenna is formed on the main surface of the substrate, and thus, an electromagnetic wave signal from the semiconductor element can be effectively received.

[0022] In this way, when performing inspection by receiving an electromagnetic wave signal from a semiconductor element, it becomes possible to supply power by a power connector and at the same time receive an electromagnetic wave signal by a loop antenna. In addition to the inspection of a conventional semiconductor element by an electrical signal, it also becomes possible to inspect an electromagnetic wave signal, simplifying the inspection of the complicated semiconductor element. Since the signal pins of the semiconductor element, which were required for the electrical inspection of the conventional semiconductor element, were many and thus the expensive probe card and the high-performance and expensive tester with many pins are no longer necessary, the cost is reduced. The long time such as the delivery time and the setup time for preparing the inspection apparatus is greatly shortened. Furthermore, since it becomes possible to enable the transmission and reception method of electromagnetic wave signals between semiconductor elements, between chiplets, and inside a chiplet, there is an effect that it can contribute to the SDGs.

Brief Description of the Drawings

[0023]

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Mode for Carrying Out the Invention

[0024] Hereinafter, embodiments will be described with reference to the drawings.

[0025] In the description of the drawings, the same reference numerals are given to the same elements, and redundant descriptions are omitted. Also, the drawings are for the purpose of understanding, and the actual dimensional ratios do not necessarily match the actual ones. Also, it goes without saying that there are parts where the dimensional relationships and ratios are different between the drawings. The embodiments shown below illustrate devices and methods for embodying the technical idea of the present invention, and the embodiments of the present invention do not specify the materials, shapes, structures, arrangements, etc. of the components as follows.

[0026] FIG. 1 is a front view and a bottom view in one embodiment of the present invention. FIG. 1(a) is a front view, and FIG. 1(b) is a bottom view.

[0027] FIG. 2 is a front view in one embodiment of the present invention and an enlarged view of FIG. 1(a).

[0028] Figure 3 is a bottom view in one embodiment of the present invention and is an enlarged view of FIG. 1(b).

[0029] In the front view and bottom view of FIG. 1, the inspection connection device according to the embodiment of the present invention is an inspection probe head, and is used for inspection by an electromagnetic wave signal radiated from a semiconductor element having a power supply terminal for receiving power and a first radiation antenna for radiating an electromagnetic wave signal.

[0030] In FIG. 1, a semiconductor element to be inspected (not shown) is arranged with the surface on which the power supply terminal and the first radiation antenna are formed facing the inspection connection device.

[0031] The inspection connection device shown in FIG. 1 includes a power supply connector 2, a first loop antenna 3, and a probe head 1 that holds the power supply connector 2 and the first loop antenna 3 in a state where the tip of the power supply connector 2 and the loop portion of the first loop antenna 3 are exposed on the bottom surface.

[0032] Note that the probe head 1 has a function of holding the power supply connector 2 and the first loop antenna 3, and the shape of the probe head 1 in the bottom view can have various shapes such as circular, square, and polygonal according to the situation.

[0033] In FIG. 2, the substrate 4 has a main surface 5 of the substrate which is the bottom surface and a back surface 6 of the substrate which is the top surface. The power supply connector 2 is preferably a probe made of a conductive material, and any type of probe such as a vertical type probe, a cantilever type probe, or a MEMS type can be used for the power supply connector 2. Here, the description will proceed with a cantilever type probe.

[0034] The power connector 2 extends obliquely downward from the lower surface of the probe head 1 and further has a bent portion, thus having a cantilever type probe shape. The tip portion is electrically connected to the power terminal with elasticity. A wiring member that penetrates from the main surface of the substrate to the back surface of the substrate facing the main surface of the substrate forms a base end portion. Further, the base end portion is exposed on the back surface of the probe head 1. The base end portion is connected to the power connector, and external power can be supplied to the power terminal of the semiconductor element through the base end portion and the power connector attached to the main surface of the substrate.

[0035] Also, the first loop antenna 3 includes two wiring members that penetrate from the main surface of the substrate to the back surface of the substrate facing the main surface of the substrate. The two wiring members form a base end portion of the first loop antenna 3. Further, the first loop antenna 3 is connected, and the signal received by the first loop antenna 3 can be taken out to the outside from the back surface through the base end portion.

[0036] Furthermore, the loop portion of the first loop antenna is exposed on the main surface of the substrate of the probe head 1. An example is shown in which the two base end portions are in the same extending direction with respect to the normal direction from the plane formed by the loop portion, but they do not necessarily have to be in the same normal direction.

[0037] In FIG. 3, the relative positional relationship between the tip portion of the power connector 2 and the loop portion of the first loop antenna 3 in the probe head 1 corresponds to the relative positional relationship between the power terminal of the semiconductor element to be inspected and the first radiation antenna.

[0038] Furthermore, the power connector 2 and the loop portion of the first loop antenna 3 are each held by the probe head 1 with a predetermined positional accuracy so that electrical connection to the power terminal of the semiconductor element to be inspected during inspection and reception of an electromagnetic wave signal from the first radiation antenna can be achieved, that is, accurate connection and reception can be achieved.

[0039] Here, "accurately connect and receive" means that the power connector 2 is electrically connected to the power terminal of the semiconductor element so as to obtain a predetermined measurement accuracy, and the first loop antenna 3 is installed in the vicinity where it can receive an electromagnetic wave signal from the first radiation antenna of the semiconductor element.

[0040] Also, FIG. 4 is a perspective view of the first loop antenna in one embodiment of the present invention, showing a situation where surrounding power connectors and probe heads are omitted.

[0041] When the first loop antenna 3 in FIG. 4 is incorporated into the probe head, as shown in FIG. 2, the two base end portions of the first loop antenna are exposed on the back surface of the probe head 1, and the loop portion of the first loop antenna is exposed on the main surface of the probe head 1.

[0042] Next, FIG. 5 shows a top view of an example of the semiconductor element to be inspected according to the present invention.

[0043] In FIG. 5, the semiconductor element 7 has a power terminal 8 and a first radiation antenna 9.

[0044] At this time, the power terminal 8 has a function of receiving power, and the first radiation antenna 9 has a function of radiating an electromagnetic wave signal.

[0045] Here, consider the function flow of the semiconductor element 7.

[0046] FIG. 6 is an example of an internal inspection flow in the semiconductor element to be inspected according to the present invention. The description will proceed with an example of a total of five stages of flow: power reception 10 as the first stage flow, BIST 11 as the second stage flow, frequency generation 12 as the third stage flow, power amplification 13 as the fourth stage flow, and electromagnetic wave signal radiation 14 as the fifth stage flow. However, the power amplification 13 is not necessarily required in the internal inspection flow.

[0047] In power supply reception 10 which is the first-stage flow of FIG. 6, power is received for the semiconductor element 7 from the power supply terminal 8 of the semiconductor element 7 shown in FIG. 5.

[0048] Next, in the second-stage flow after power is received for the semiconductor element 7 in the first-stage flow of FIG. 6, inside the semiconductor element, the semiconductor element itself automatically performs an inspection of whether the semiconductor element itself is a good product or a defective product by an embedded self-test such as BIST (Built in self test). As a determination result, for example, a good product is output as a HIGH signal and a defective product is output as a LOW signal, and it is possible to input this signal to frequency generation 12.

[0049] Also, here, FIG. 7 shows an example of frequency generation 12 which is the third-stage flow in FIG. 6, and constitutes a ring oscillator.

[0050] A ring oscillator can be cited as a circuit for generating a frequency. A normal ring oscillator has a configuration in which three or more odd numbers of inverters are connected in series and can generate a frequency.

[0051] At this time, consider a ring oscillator that applies NAND 15 as a replacement for the inverter to the first-stage gate as shown in FIG. 7.

[0052] Here, as shown in FIG. 7, the ring oscillator is composed of three stages of gates. The first-stage gate is NAND 15, the second-stage gate is the first inverter 16, and the third-stage gate is the second inverter 17.

[0053] Here, consider the operation of the ring oscillator in FIG. 7.

[0054] Considering the operation of NAND 15 in FIG. 7, when a HIGH signal which is a good product result by BIST 11 is input to one input terminal 18 of NAND 15, NAND 15 has a function as an inverter that inverts the signal of the other input terminal 20 of NAND 15.

[0055] At this time, since NAND15 functions as an inverter, it functions as a ring oscillator composed of an odd number, that is, three stages of inverters, including the first inverter 16 and the second inverter 17. Therefore, a frequency f is output from the output terminal 19 of the ring oscillator in FIG. 7.

[0056] Here, assuming that the delay of NAND15 is τ1, the delay of the first inverter 16 is τ2, and the delay of the second inverter 17 is τ3, generally, the output frequency f can be expressed as f = 1 / ((2x(τ1 + τ2 + τ3)).

[0057] Also, when a LOW signal, which is a defective product result as the determination result by BIST11, is input to one input terminal 18 of NAND, NAND15 does not operate, and no frequency is output from the output terminal 19 of the ring oscillator in FIG. 7.

[0058] Therefore, when the determination result by BIST11 is a non-defective product, the frequency f is output from the output terminal 19 of the ring oscillator. When the determination result by BIST11 is a defective product, no frequency is output from the output terminal 19 of the ring oscillator.

[0059] Also, at this time, in order to divide one semiconductor element into two or more areas and automatically inspect whether each divided area is a non-defective product or a defective product for each divided area, BISTs can be provided individually for each area. As the determination result for each area, for example, a non-defective product can be output as a HIGH signal and a defective product can be output as a LOW signal.

[0060] Here, assume that one semiconductor element is divided into two areas, and one of the divided areas is the first area and the other area is the second area.

[0061] Consider the case where the first area has the first BIST and the second area has the second BIST.

[0062] At this time, by shifting the timing at which the result of the first BIST and the result of the second BIST are output, it is possible to output the first BIST result and the second BIST result individually with the timing shifted.

[0063] Alternatively, a first ring oscillator can be provided for the first BIST, a second ring oscillator can be provided for the second BIST, and the frequencies output by the first ring oscillator and the second ring oscillator can be changed.

[0064] For example, if the number of inverter stages of the first ring oscillator is three and the number of inverter stages of the second ring oscillator is five, the frequency output from the second ring oscillator will be lower than that from the first ring oscillator.

[0065] Also, if the number of inverter stages of the first ring oscillator is three and the number of inverter stages of the second ring oscillator is also three, and a capacitor for the purpose of time delay is added between the inverters of the second ring oscillator, the frequency output from the second ring oscillator will be lower than that from the first ring oscillator.

[0066] Next, consider the fourth flow after the third flow in FIG. 6.

[0067] In FIG. 6, as the power amplification 13 of the fourth flow, a general trunk type clock circuit or the like is used, and the gates of the final stage of the trunk type clock circuit are bundled and connected, so that the power of the signal obtained from the third stage frequency generation can be amplified. Furthermore, it is also possible to reduce the impedance of the final stage of the trunk type clock circuit, and the signal obtained by bundling and connecting the gates of the final stage of the trunk type clock circuit can be sent to the fifth stage electromagnetic wave signal radiation.

[0068] Also, at this time, it is possible to divide the semiconductor element into two or more areas and individually provide a power amplification unit having a power amplification function for each of the divided areas, but the power amplification unit is not necessarily required.

[0069] Next, consider the fifth flow after the fourth flow.

[0070] As the electromagnetic wave signal radiation 14 which is the fifth flow in FIG. 6, for example, by connecting the signal obtained by bundling and connecting the gates of the final stage of the trunk type clock circuit in the power amplification 13 to the first radiation antenna 9 included in the semiconductor element 7, etc., it becomes possible to radiate the electromagnetic wave signal from the first radiation antenna 9.

[0071] At this time, considering the shapes such as a loop antenna, a monopole antenna, or a dipole antenna as the first radiation antenna 9 for the electromagnetic wave signal radiation 14, when forming the antenna of each shape on the upper surface of the semiconductor element, since it is affected to some extent by the GND plane etc. in the semiconductor element, the directivity does not need to be particularly considered, and it is possible to use the antenna of each shape judging as having no directivity.

[0072] Also, at this time, it is possible to divide the semiconductor element into two or more areas and individually provide the first radiation antenna having the function of electromagnetic wave signal radiation for each of the divided areas.

[0073] As the shape of the first radiation antenna at this time, it is possible to select a monopole antenna, a dipole antenna, a loop antenna, etc., and it is further possible to select a plurality of sizes.

[0074] Furthermore, even when the semiconductor element is divided into two or more areas, it is possible to provide one first radiation antenna having the function of electromagnetic wave signal radiation, and the divided areas share and use the one first radiation antenna.

[0075] As described above, in FIG. 6, an example of the internal inspection flow in the semiconductor device to be inspected according to the present invention has been described. Next, a specific method for receiving an electromagnetic wave signal from the semiconductor device by the inspection connection device will be described.

[0076] Normally, when the first radiation antenna 9 of the semiconductor device and the first loop antenna 3 of the inspection connection device are in proximity, the electromagnetic wave signal radiated from the first radiation antenna 9 is received by the first loop antenna 3.

[0077] In the inspection connection device shown in FIG. 1, when receiving the electromagnetic wave signal radiated from the first radiation antenna 9 of the semiconductor device 7, the tip of the power connector 2 is electrically connected to the power terminal 8, and the first loop antenna 3 can simultaneously receive the electromagnetic wave signal from the first radiation antenna 9.

[0078] As a result, for example, when the tip of the power connector 2 is electrically connected to the power terminal, power is received by the semiconductor device 7, and as shown in the electromagnetic wave signal radiation, which is the fifth stage of the internal inspection flow in the semiconductor device to be inspected according to the present invention shown in FIG. 6, the electromagnetic wave signal radiated from the first radiation antenna 9 of the semiconductor device is received by the loop portion of the first loop antenna 3, and the electromagnetic wave signal is detected by the inspection connection device.

[0079] Here, the first loop antenna is described as an antenna having a function of receiving an electromagnetic wave signal, but it is also possible to give it a function as an antenna having a function of radiating an electromagnetic wave signal, and it is also possible to give it a function as both a receiving antenna and a radiating antenna.

[0080] In this way, the inspection connection device functions as a probe card that connects to the semiconductor device to be inspected.

[0081] In addition, although the loop portion of the first loop antenna 3 is intended to receive an electromagnetic wave signal, when using a conductive material forming the loop portion or a coating material for protection or prevention of electrical short circuit around it, characteristics such as the dielectric constant of the coating material and characteristics such as the frequency band and gain as an antenna when receiving the electromagnetic wave signal will differ depending on the radius of the loop portion and the like.

[0082] Also, by connecting the two base ends of the first loop antenna 3 to an amplifier (amp) or the like, the electromagnetic wave signal received from the loop portion of the first loop antenna 3 can be amplified by the amplifier.

[0083] Furthermore, by connecting the electromagnetic wave signal amplified by the amplifier to a spectrum analyzer or the like, it is possible to obtain frequency information and the like of the electromagnetic wave signal with the spectrum analyzer.

[0084] At this time, as described with reference to FIGS. 6 and 7, for example, when the determination result by BIST11 is a non-defective product, an electromagnetic wave signal is radiated from the first radiation antenna 9, and the electromagnetic wave signal can be received by the first loop antenna 3. Furthermore, by connecting the two base ends of the first loop antenna 3 to an amplifier or the like and further connecting to a spectrum analyzer or the like, frequency information and the like of the electromagnetic wave signal can be obtained. Therefore, it is possible to obtain inspection result information indicating that the semiconductor element to be inspected is a non-defective product by the inspection connection device.

[0085] Similarly, for example, when the determination result by BIST11 is a defective product, no electromagnetic wave signal is radiated from the first radiation antenna 9. Therefore, no electromagnetic wave signal can be received by the first loop antenna 3. Furthermore, even if the two base ends of the first loop antenna 3 are connected to an amplifier or the like and further connected to a spectrum analyzer or the like, no electromagnetic wave signal itself can be obtained. Therefore, no frequency information and the like of the electromagnetic wave signal can be obtained, and it is possible to obtain inspection result information indicating that the semiconductor element to be inspected is a defective product by the inspection connection device.

[0086] FIG. 8 is a bottom view of a probe head for incorporating a plurality of loop antennas.

[0087] When installing a plurality of loop antennas on a probe head, instead of separately preparing through guide holes for the two base ends of each of the plurality of loop antennas to be exposed on the upper surface of the probe head, it is also possible to make them common with the two base ends of adjacent plurality of loop antennas.

[0088] FIG. 8 shows a situation where the two base ends of each of a plurality of loop antennas of the same size are exposed on the upper surface of the probe head by the common guide hole 21. However, the concept is the same even when installing a plurality of loop antennas with different loop portion radius sizes on the probe head.

[0089] Next, FIG. 9 is a diagram showing the positional relationship between the loop antenna and the power supply connector in the front view of the present invention.

[0090] Consider an inspection connection device configured such that the tip of the power supply connector 2 extends by a length of H1 from the lower surface of the loop portion of the first loop antenna 3 of the probe head 1 as shown in FIG. 9.

[0091] Here, when considering alignment when assuming that H1 is 300 μm, for example, the stage on which the semiconductor element is mounted is moved in a direction parallel to the mounting surface, or rotated about the normal direction of the mounting surface as the central axis for alignment. However, it is also possible to perform the alignment while photographing an alignment mark provided on the inspection connection device with an imaging device such as a CCD camera arranged on the stage.

[0092] At this time, when a photographed image of the alignment mark provided on the inspection connection device is obtained by the imaging device arranged on the stage, relative position information between the stage on which the semiconductor element is mounted and the inspection connection device can be obtained by image processing of the photographed image.

[0093] Based on this relative position information, the position and orientation of the stage will be adjusted so that the tip of the power connector 2 can be electrically contacted with the power terminal of the semiconductor element.

[0094] Furthermore, when the tip of the power connector 2 and the power terminal of the semiconductor element are brought into contact with each other in a state where their positions coincide in a plan view, since the positional relationship between the tip of the power connector 2 and the loop portion of the first loop antenna 3 corresponds to the positional relationship between the power terminal of the semiconductor element and the first radiation antenna, the loop portion of the first loop antenna 3 is arranged at a position where it can receive the electromagnetic wave signal from the first radiation antenna of the semiconductor element.

[0095] Next, FIG. 10 shows a front view when the power connector of the present invention is connected to the power terminal.

[0096] In FIG. 10, when the semiconductor element and the inspection connection device are brought close to each other such that the power connector is pressed against the power terminal of the semiconductor element with a predetermined needle pressure, for example, an overdrive is applied so as to press the tip of the power connector against the semiconductor element.

[0097] In this case, the semiconductor element and the inspection connection device are brought close to each other such that H2 is the distance at which the loop portion of the first loop antenna can receive the electromagnetic wave signal from the first radiation antenna of the semiconductor element, as the distance between the loop portion of the first loop antenna and the first radiation antenna of the semiconductor element.

[0098] Here, the distance between the loop portion of the first loop antenna and the first radiation antenna of the semiconductor element can be controlled within a certain range by the setting of H1 and the setting of the overdrive in FIG. 9.

[0099] As an example, when H1 in FIG. 9 is 300 μm and the application of the overdrive is 100 μm, the distance H2 is about 200 μm.

[0100] At this time, the loop portion of the first loop antenna will be close to the semiconductor element by about 200 μm. However, if the loop portion of the first loop antenna is separated from the probe head due to deformation or the like, the loop portion will come into contact with the semiconductor element, which may damage the semiconductor element.

[0101] Therefore, ideally, the loop portion of the first loop antenna should be fixed so that it does not move away from the lower surface of the probe head, such as being connected to the lower surface of the probe head and remaining stationary.

[0102] In this case, it is also possible to adhere the loop portion of the first loop antenna to the lower surface of the probe head with an adhesive material or the like to prevent peeling, or to directly form the loop portion of the first loop antenna with a conductive material or the like on the lower surface of the probe head by a technique such as photolithography.

[0103] Also, here, in the inspection connection device shown in FIG. 1, the power supply connector and the first loop antenna are each arranged on the probe head with a predetermined positional accuracy.

[0104] In this case, by aligning the power supply connector with the power supply terminal of the semiconductor element, the first loop antenna will also be simultaneously aligned with the first radiation antenna of the semiconductor element.

[0105] Therefore, it is easy to align the inspection connection device with the semiconductor element.

[0106] Next, an inspection connection device corresponding to the semiconductor element shown in FIG. 5 will be described.

[0107] The semiconductor element 7 shown in FIG. 5 has a power supply terminal 8 and a first radiation antenna 9. The power supply terminal 8 has a function of receiving power for the semiconductor element 7, and the first radiation antenna 9 has a function of radiating an electromagnetic wave signal.

[0108] At this time, in the wafer state, usually a plurality of semiconductor elements are arranged.

[0109] FIG. 11 is a top view of an example of a plurality of semiconductor elements to be inspected according to the present invention.

[0110] In FIG. 11, each of the plurality of arranged semiconductor elements 7 has one power terminal 8 and one first radiation antenna 9, respectively.

[0111] Here, FIG. 12 is a bottom view of an embodiment for simultaneously inspecting a plurality of semiconductor elements according to the present invention and is an inspection connection device.

[0112] In FIG. 12, the probe head 1 has a plurality of inspection units 22, and each of the plurality of inspection units 22 has one power connector 2 and a first loop antenna 3. The positional relationship between the plurality of power connectors 2 and the plurality of first loop antennas 3 in FIG. 12 corresponds to the positions of the plurality of power terminals 8 and the plurality of first radiation antennas 9 in the plurality of semiconductor elements 7 in FIG. 11.

[0113] That is, in FIG. 12, the probe head 1 has a configuration in which a plurality of inspection units 22 are arranged such that the tip of the power connector 2 and the loop portion of the first loop antenna 3 correspond to the power terminal 8 and the first radiation antenna 9 of each semiconductor element 7 in FIG. 11, respectively, and it is possible to simultaneously inspect a plurality of semiconductor elements.

[0114] Also, in the wafer state, there are cases where semiconductor elements are arranged in a lattice pattern. In this case as well, it is possible to cope by incorporating the inspection units 22 into the probe head 1 in a lattice pattern.

[0115] Furthermore, FIG. 12 shows an example in which a first loop antenna having the same shape and the same size is incorporated in each inspection unit 22. However, as another example, a monopole antenna, a dipole antenna, or another loop antenna having a different radius of the loop portion can also be used as an alternative to the first loop antenna. In this case, depending on the characteristics of the antenna installed in each inspection unit, it is possible to receive a plurality of electromagnetic wave signals having different frequency characteristics from the semiconductor element.

[0116] Next, FIG. 13 is a bottom view of an embodiment for simultaneously inspecting a plurality of semiconductor elements of the present invention, and a GND pattern 23 is provided for partitioning a plurality of inspection units 22.

[0117] Since the GND pattern 23 can prevent the intrusion of electromagnetic wave signals from other semiconductor elements adjacent to each semiconductor element 7 to be measured, which are measured by each inspection unit 22, each inspection unit 22 can appropriately receive the electromagnetic wave signals from each semiconductor element 7 to be measured. Therefore, false reception and interference can be prevented, and a plurality of semiconductor elements can be measured simultaneously.

[0118] Next, FIG. 14 is a bottom view of an embodiment having a plurality of loop antennas of the present invention.

[0119] In FIG. 14, the probe head 1 has a power connector 2, a first loop antenna 3, and a second loop antenna 24.

[0120] Here, as shown in FIG. 15, consider a case where a first radiation antenna 9 and a second radiation antenna 25 are incorporated in a semiconductor element 7 to be inspected.

[0121] Assume that in the semiconductor element 7, the first radiation antenna 9 has a first resonance frequency and radiates an electromagnetic wave signal of the first frequency, and the second radiation antenna 25 has a second resonance frequency and radiates an electromagnetic wave signal of the second frequency.

[0122] At this time, when the first loop antenna uses a conductive material forming the loop portion of the first loop antenna and a coating material for protection or prevention of electrical short circuit around it, due to characteristics such as the dielectric constant of the coating material and factors such as the radius of the loop portion, the electromagnetic wave signal from the first radiating antenna can be received, but it is assumed that the electromagnetic wave signal radiated from the second radiating antenna cannot be received.

[0123] Therefore, by providing a second loop antenna having characteristics such that the electromagnetic wave signal radiated from the second radiating antenna can be received, for example, when using a conductive material forming the loop portion and a coating material for protection or prevention of electrical short circuit around it, characteristics such as the dielectric constant of the coating material and characteristics such as the radius of the loop portion, on the probe head 1, it becomes possible to receive the electromagnetic wave signal radiated from the second radiating antenna by the second loop antenna.

[0124] Furthermore, it is also known that in a loop antenna, by changing the radius of the loop portion, the reception sensitivity and the resolution change. With a first loop antenna having a loop portion with a first radius and a second loop antenna having a loop portion with a second radius, it is possible to selectively receive electromagnetic wave signals of different types of frequencies.

[0125] Next, FIG. 16 is a bottom view in an embodiment having a plurality of loop antennas of the present invention.

[0126] In FIG. 16, the probe head 1 has a power supply connector 2, a first loop antenna 3, and a third loop antenna 26.

[0127] Also, FIG. 17 shows a top view of an example of a semiconductor element to be inspected according to the present invention.

[0128] In FIG. 17, the semiconductor element 7 has a power supply terminal 8, a first radiating antenna 9, and a third radiating antenna 27.

[0129] At this time, it is assumed that the power supply terminal 8 has a function of receiving power, the first radiation antenna 9 has a first resonance frequency and radiates an electromagnetic wave signal of the first frequency, and the third radiation antenna 27 has a third resonance frequency and radiates an electromagnetic wave signal of the third frequency.

[0130] At this time, for the first loop antenna, when using a conductive material forming the loop portion of the first loop antenna and a coating material for protection or prevention of electrical short circuit around it, the characteristics such as the dielectric constant of the coating material and factors such as the radius of the loop portion are set so that the electromagnetic wave signal from the first radiation antenna can be received. Further, it is arranged on the probe head so that the electromagnetic wave signal from the first radiation antenna can be properly received.

[0131] Also, a third loop antenna having characteristics such that it can receive the electromagnetic wave signal radiated from the third radiation antenna, for example, when using a conductive material forming the loop portion and a coating material for protection or prevention of electrical short circuit around it, the characteristics such as the dielectric constant of the coating material and the characteristics such as the radius of the loop portion are arranged on the probe head.

[0132] As a result, it becomes possible to receive the respective electromagnetic wave signals radiated from the first radiation antenna 9 and the third radiation antenna 27 of the semiconductor element 7 by the first loop antenna 3 and the third loop antenna 26.

[0133] Also, at this time, it is also possible to make the radius of the loop portion of the first loop antenna 3 the same as the characteristics of the third loop antenna 26, for example, when using a conductive material forming the loop portion and a coating material for protection or prevention of electrical short circuit around it, the characteristics such as the dielectric constant of the coating material and the characteristics such as the radius of the loop portion.

[0134] Next, FIG. 18 is a bottom view of an embodiment having a plurality of loop antennas according to the present invention, and a GND pattern 23 is provided to partition the first loop antenna 3 and the third loop antenna 26.

[0135] Since the GND pattern 23 can prevent the intrusion of electromagnetic wave signals from the third radiation antenna 27 adjacent to the first radiation antenna 9 of each semiconductor element 7, which is the object to be measured, measured by the first loop antenna 3, the first loop antenna 3 can appropriately receive the electromagnetic wave signals from the first radiation antenna 9 of each semiconductor element 7, which is the object to be measured, and thus false reception and interference can be prevented.

[0136] Similarly, since the GND pattern 23 can prevent the intrusion of electromagnetic wave signals from the first radiation antenna 9 adjacent to the third radiation antenna 27 of each semiconductor element 7, which is the object to be measured, measured by the third loop antenna 26, the third loop antenna 26 can appropriately receive the electromagnetic wave signals from the third radiation antenna 27 of each semiconductor element 7, which is the object to be measured, and thus false reception and interference can be prevented.

[0137] Furthermore, although the description here is specialized for loop antennas, as an alternative to the third loop antenna, other shaped antennas such as a monopole antenna or a dipole antenna with a different shape from the loop antenna can also be used, and furthermore, in addition to the third loop antenna, it is also possible to incorporate a fourth loop antenna or a fifth loop antenna.

[0138] At this time, in FIG. 18, the first loop antenna 3 and the third loop antenna 26 are each used as a function for receiving electromagnetic wave signals, but it is also possible to use the first loop antenna 3 as a function for receiving electromagnetic wave signals and the third loop antenna 26 as a function for radiating electromagnetic wave signals, and in that case, it can be used as a means for two-way communication.

[0139] For example, in FIG. 17, assuming that in the semiconductor element 7, the first radiation antenna 9 has the function of a radiation antenna, and the third radiation antenna 27 has the function of reception rather than radiation, the electromagnetic wave signal radiated from the first radiation antenna 9 of the semiconductor element 7 is received by the first loop antenna 3, it becomes possible to receive the electromagnetic wave signal radiated from the third loop antenna 26 by the third radiation antenna 27 of the semiconductor element 7.

[0140] Furthermore, at this time, it is also possible to change the shapes of the first radiation antenna 9, the third radiation antenna 27, the first loop antenna 3, and the third loop antenna 26 in the semiconductor element 7 into shapes such as loop antennas, monopole antennas, and dipole antennas to provide the radiation function and reception function of electromagnetic wave signals.

[0141] Next, FIG. 19 shows the layer structure of the substrate in one embodiment of the present invention and constitutes a probe head.

[0142] In FIG. 19, as the layer structure of the substrate 4, the substrate has a first metal layer 28 of the substrate on the main surface 5 of the substrate, the adjacent layer via an insulating layer has a second metal layer 29 of the substrate, and the further adjacent layer via an insulating layer has a third metal layer 30 of the substrate, and the back surface of the substrate has a fourth metal layer 31 of the substrate.

[0143] At this time, a loop antenna is formed by the first metal layer 28 of the substrate and the adjacent second metal layer 29 of the substrate.

[0144] Next, FIG. 20 is a perspective view of the loop antenna in the adjacent layers of the present invention, and is a view in which the surrounding insulating layer, wirings other than the components of the loop antenna, and solid layers are deleted.

[0145] In FIG. 20, A loop portion 32 of a loop antenna of the first metal layer is formed on the first metal layer 28 of the substrate, and one terminal of the loop portion 32 of the loop antenna of the first metal layer is connected to one terminal of a lead wire 35 in the first metal layer. The other terminal of the loop portion 32 of the loop antenna of the first metal layer is connected to one terminal of a VIA 34 that connects the first metal layer and the second metal layer. The other terminal of the VIA 34 that connects the first metal layer and the second metal layer is connected to one terminal of a loop portion 33 of a loop antenna of the second metal layer formed on the second metal layer 29. The other terminal of the lead wire 35 and the other terminal of the loop portion 33 of the loop antenna of the second metal layer are connected to a base end portion 36 of the loop antenna, and the structure is exposed on the back surface of the substrate.

[0146] At this time, if the radius of the loop portion 32 of the loop antenna of the first metal layer is the same as the radius of the loop portion 33 of the loop antenna of the second metal layer, and the reception characteristics of the loop portion 32 of the loop antenna of the first metal layer and the loop portion 33 of the loop antenna of the second metal layer are the same, then in the probe head in which the loop portion 32 of the loop antenna of the first metal layer and the loop portion 33 of the loop antenna of the second metal layer are incorporated, it is possible to receive more electromagnetic wave signals from the semiconductor element which is the object to be measured.

[0147] Also at this time, in the same manner, it is also possible to form loop portions of loop antennas on the third metal layer 30 of the substrate and the fourth metal layer 31 of the substrate on the back surface, and electrically connect the loop portions in each metal layer by VIA or the like.

[0148] Furthermore, here, in FIG. 19, the number of metal layers of the substrate is set to 4 layers, but it is also possible to increase the number of layers to 6 layers, 8 layers, or even more, and form a plurality of loop portions in the vertical and horizontal directions when viewed from the main surface of the substrate in each layer. Also, as for the type of printed wiring board serving as the substrate, it is also possible to use a rigid substrate, a ceramic substrate, a flexible substrate, or the like.

[0149] Next, in FIG. 5, the case where the semiconductor element 7 has a power supply terminal 8 is considered. However, depending on the semiconductor element, there are semiconductor elements that can receive power by means such as photovoltaic power generation (PV), ultraviolet irradiation, and wireless power supply as a power reception mechanism. As a power supply terminal, instead of receiving power with a metal terminal, there are also those that have a power supply terminal as a light receiving terminal for photovoltaic power generation (PV), a power supply terminal as a light receiving terminal for power generation by ultraviolet rays, and a power supply terminal for power generation by wireless power supply, and substitution is possible.

[0150] For power reception of a semiconductor element capable of receiving power by means such as photovoltaic power generation (PV), ultraviolet irradiation, and wireless power supply as described above, as an alternative to voltage supply by the power connector of the present invention, a test connection device having a function of irradiating visible light for photovoltaic power generation (PV), a function of irradiating ultraviolet rays, or a function of irradiating electromagnetic waves for wireless power supply can also be used.

[0151] As still another example, by having the first loop antenna inside the first semiconductor element, an electromagnetic wave signal radiated from a second semiconductor element having a function of radiating an electromagnetic wave signal by the first radiating antenna can be received by the first loop antenna of the first semiconductor element.

[0152] In that case, an electromagnetic wave signal is radiated from the second semiconductor element and received by the first semiconductor element. Conversely, an electromagnetic wave signal from the first radiating antenna of the first semiconductor element can also be received by the loop antenna of the second semiconductor element. Since the two semiconductor elements exchange electromagnetic wave signals with each other, signal communication without wire connection between the semiconductor elements becomes possible.

[0153] As another example by the same method, by having the first loop antenna inside the first chiplet, an electromagnetic wave signal radiated from a second chiplet having a function of radiating an electromagnetic wave signal by the first radiating antenna can be received by the first loop antenna of the first chiplet.

[0154] In that case, an electromagnetic wave signal is radiated from the second chiplet and received by the first chiplet. Conversely, an electromagnetic wave signal from the first radiation antenna of the first chiplet can also be received by the loop antenna of the second chiplet. Since the two chiplets exchange electromagnetic wave signals with each other, signal communication without wire connection between the chiplets becomes possible.

[0155] Furthermore, considering the situation inside the same chiplet, there are multiple semiconductor elements inside the same chiplet. By providing a loop antenna having a function of receiving an electromagnetic wave signal radiated from the chiplet in the third semiconductor element in the chiplet, it is also possible to acquire an electromagnetic wave signal from the fourth semiconductor element in the same chiplet having a function of radiating an electromagnetic wave signal by the first radiation antenna.

[0156] In that case, an electromagnetic wave signal is radiated from the fourth semiconductor element in the chiplet and received by the third semiconductor element in the same chiplet. Conversely, an electromagnetic wave signal from the first radiation antenna of the third semiconductor element can also be received by the loop antenna of the fourth semiconductor element. Since the two semiconductor elements can exchange electromagnetic wave signals with each other, wire connection within the chiplet becomes unnecessary.

[0157] Furthermore, since a chiplet usually includes an interposer for connecting semiconductor elements, it is also possible to install a first radiation antenna for radiating an electromagnetic wave signal, a loop antenna for receiving an electromagnetic wave signal, etc. in the interposer.

[0158] As another example, in FIG. 1, only a power connector is described as an electrical-related connector. However, in addition to the power connector, it is also possible to install other power connectors having a function of supplying power at the same potential or different potentials on the probe head.

[0159] As another embodiment with a similar concept, it is also possible to install a GND connector having a function of supplying a potential at the GND level on the probe head in addition to the power connector.

[0160] In addition to the power connector, it is also possible to install an electrical connector having a function of transmitting, receiving, or both transmitting and receiving electrical signals on the probe head.

[0161] As described above, regarding the inspection connection device for receiving an electromagnetic wave signal from the semiconductor element of the present invention, examples have been given and the description has proceeded. An inspection probe head including a first radiation antenna, a substrate having a main surface, and a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element to supply power to the semiconductor element, a first receiving antenna attached to the main surface side of the substrate and having a function of receiving an electromagnetic wave signal radiated from the first radiation antenna of the semiconductor element by connecting the power connector and the power terminal, The inspection probe head, wherein the first receiving antenna is formed on the main surface of the substrate. By being this, it becomes possible to effectively receive an electromagnetic wave signal from a semiconductor element.

[0162] In this way, when inspecting by receiving an electromagnetic wave signal from a semiconductor element, it becomes possible to supply power by a power connector and at the same time receive an electromagnetic wave signal by a loop antenna. In addition to the inspection of a conventional semiconductor element by an electrical signal, it also becomes possible to perform an inspection by receiving an electromagnetic wave signal. The inspection of the complicated semiconductor element becomes simple, and the expensive probe card and the high-performance and expensive tester, which have many signal pins of the semiconductor element and have been multi-pin due to this, are no longer required, resulting in cost reduction. A great deal of time such as the delivery time and setup time for preparing the inspection apparatus is greatly shortened. Furthermore, since it becomes possible to enable the transmission and reception method of electromagnetic wave signals between semiconductor elements, between chiplets, and inside a chiplet, there is an effect that it can contribute to the SDGs.

Industrial Applicability

[0163] In the inspection connection device for receiving an electromagnetic wave signal from a semiconductor element of the present invention, When inspecting by receiving an electromagnetic wave signal from a semiconductor element, it becomes possible to supply power by a power connector and at the same time receive an electromagnetic wave signal by a loop antenna. In addition to the inspection of a conventional semiconductor element by an electrical signal, it also becomes possible to perform an inspection by receiving an electromagnetic wave signal. The inspection of the complicated semiconductor element becomes simple, and the expensive probe card and the high-performance and expensive tester, which have many signal pins of the semiconductor element and have been multi-pin due to this, are no longer required, resulting in cost reduction. A great deal of time such as the delivery time and setup time for preparing the inspection apparatus is greatly shortened. Furthermore, since it becomes possible to enable the transmission and reception method of electromagnetic wave signals between semiconductor elements, between chiplets, and inside a chiplet, there is an effect that it can contribute to the SDGs.

Explanation of Signs

[0164] 1 ··· Probe head 2 ··· Power connector 3 ··· First loop antenna 4 ··· Substrate 5... Main surface of the substrate 6... Back surface of the substrate 7... Semiconductor element 8... Power supply terminal 9... First radiation antenna 10... Power reception 11... BIST 12... Frequency generation 13... Power amplification 14... Electromagnetic wave signal radiation 15... NAND 16... First inverter 17... Second inverter 18... One input terminal of NAND 19... Output terminal of the ring oscillator 20... The other input terminal of NAND 21... Common guide hole 22... Inspection unit 23... GND pattern 24... Second loop antenna 25... Second radiation antenna 26... Third loop antenna 27... Third radiation antenna 28... First metal layer of the substrate 29... Second metal layer of the substrate 30... Third metal layer of the substrate 31... Fourth metal layer of the substrate 32... Loop part of the loop antenna in the first metal layer 33... Loop part of the loop antenna in the second metal layer 34... VIA connecting the first metal layer and the second metal layer 35... Lead wire in the first metal layer 36... Base end part of the loop antenna

Claims

1. A probe head for inspecting a semiconductor device having a first radiation antenna, comprising: a substrate having a main surface; a power connector attached to the main surface side of the substrate, connected to a power terminal of the semiconductor device, and configured to supply power to the semiconductor device; a first receiving antenna attached to the main surface side of the substrate, having an annular coil for receiving an electromagnetic wave signal radiated from the first radiation antenna of the semiconductor device by connecting the power connector and the power terminal; and, when the power connector is electrically connected to the power terminal of the semiconductor device to be inspected, the annular coil is arranged on the main surface so as to be positioned corresponding to the first radiation antenna of the semiconductor device, whereby the radiation pattern radiated from the first radiation antenna is designed to enter the inside of the annulus of the annular coil; the power connector has a bending structure such that when it contacts the power terminal of the semiconductor device, the distance between the surface of the semiconductor device and the first receiving antenna can be made close. The probe head for inspection is characterized by this.

2. The first receiving antenna includes a first loop antenna having a first radius and a second loop antenna having a second radius different from the first radius, The inspection probe head according to claim 1, wherein the second loop antenna is arranged inside the first loop antenna.

3. The first receiving antenna includes a first loop antenna and a second loop antenna arranged laterally to the first loop antenna. The inspection probe head according to claim 1 is characterized by this.

4. The first receiving antenna has a first loop antenna and a second loop antenna laminated via an insulating layer in a direction intersecting the extending direction of the main surface. The inspection probe head according to claim 1 is characterized by this.

5. A probe head for inspecting a semiconductor device having a first radiation antenna, comprising: formed on a substrate having a main surface and having a size corresponding to the size of the semiconductor device, including a plurality of inspection units capable of simultaneously measuring a plurality of the semiconductor devices formed on a semiconductor wafer; each of the inspection units is attached to the main surface side of the substrate, and includes a power connector connected to a power terminal of the semiconductor device and configured to supply power to the semiconductor device; A receiving antenna having an annular coil, which is attached to the main surface side of the substrate and receives an electromagnetic wave signal radiated from the first radiation antenna of the semiconductor element by connecting the power connector and the power terminal. When the power connector is electrically connected to the power terminal of the semiconductor element to be inspected, the annular coil is arranged on the main surface so as to be at a position corresponding to the first radiation antenna of the semiconductor element, whereby the radiation pattern radiated from the first radiation antenna is designed to enter the inside of the annulus of the annular coil. The inspection probe head is characterized in that the power connector has a bending structure such that the distance between the surface of the semiconductor element and the receiving antenna can be approximated when the power connector contacts the power terminal of the semiconductor element.

6. An inspection probe head for a semiconductor element provided with a radiation antenna and a receiving antenna, A substrate having a main surface, A power connector attached to the main surface side of the substrate, connected to the power terminal of the semiconductor element, and configured to supply power to the semiconductor element, A probe receiving antenna having an annular coil attached to the main surface side of the substrate, and a probe radiation antenna, The probe receiving antenna is configured to receive a first electromagnetic wave signal radiated from the radiation antenna of the semiconductor element by connecting the power connector and the power terminal. The probe radiation antenna is configured to radiate a second electromagnetic wave signal that can be received by the receiving antenna provided in the semiconductor element by connecting the power connector and the power terminal. The inspection probe head is disposed above the semiconductor element to be inspected. When the power connector is electrically connected to the power terminal of the semiconductor element to be inspected, the annular coil is arranged on the main surface so as to be at a position corresponding to the radiation antenna of the semiconductor element, whereby the radiation pattern radiated from the radiation antenna is designed to enter the inside of the annulus of the annular coil. The inspection probe head is characterized in that the power connector has a bending structure such that the distance between the surface of the semiconductor element and the probe receiving antenna and the probe radiation antenna can be approximated when the power connector contacts the power terminal of the semiconductor element.

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