Resin composition

Abstract

To provide a resin composition that can give a cured product to resist warping and show good adhesion to a conductor layer.SOLUTION: A resin composition comprises (A) epoxy resin, (B) inorganic filler, and (C) elastomers, the (A) epoxy resin including (A-1) epoxy resin having an epoxy group and a chelate forming capacity.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a resin composition, a cured product using the resin composition, a resin sheet, a circuit board, a semiconductor chip package, and a semiconductor device.

Background Art

[0002] In recent years, the demand for small high-performance electronic devices such as smartphones and tablet devices has been increasing. Along with this, there is a growing demand for further high functionality of encapsulants for semiconductor chip packages used in these small electronic devices. As such an encapsulant, one formed by curing a resin composition is known. On the other hand, as technologies for uses different from encapsulants, there are the technologies of Patent Documents 1 and 2.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] The resin composition used for the encapsulant generally contains an inorganic filler for the purpose of improving insulation and encapsulation properties. A cured product of such a resin composition containing an inorganic filler tends to generate a large warp.

[0005] If the cured product contains a fiber base material like a prepreg, it is considered that the warpage can be suppressed because the rigidity of the entire cured product can be increased or the thermal expansion can be reduced by the action of the fiber base material. However, since the encapsulant usually does not contain a fiber base material, it has been difficult to suppress warpage.

[0006] Therefore, the present inventor attempted to suppress warping by reducing the elastic modulus of the cured product of the resin composition. Specifically, by adopting a resin composition containing an elastomer, an attempt was made to reduce the elastic modulus of the cured product thereof and suppress warping. As a result, warping suppression was achieved. However, the cured product of the resin composition containing an elastomer was inferior in adhesion to the conductor layer.

[0007] Therefore, the present inventor further studied and attempted to improve the adhesion by using an adhesion promoter in combination with the elastomer. However, when the adhesion promoter was used, although the adhesion was improved, the warping increased. Therefore, it was difficult for the conventional encapsulant to achieve both warping suppression and adhesion improvement.

[0008] The present invention was devised in view of the above problems, and an object thereof is to provide a resin composition capable of obtaining a cured product excellent in warping suppression and adhesion to a conductor layer; a cured product of the resin composition; and a resin sheet, a circuit board, a semiconductor chip package, and a semiconductor device using the resin composition.

Means for Solving the Problems

[0009] The present inventor earnestly studied to solve the above problems. As a result, the present inventor found that the above problems can be solved by a resin composition containing (A) an epoxy resin, (B) an inorganic filler, and (C) an elastomer, and (A) the epoxy resin containing an epoxy resin having a structure containing an epoxy group and a chelating ability, and completed the present invention. That is, the present invention includes the following.

[0010] 〔1〕 A resin composition containing (A) an epoxy resin, (B) an inorganic filler, and (C) an elastomer, wherein (A) the epoxy resin contains an epoxy resin having a structure containing an epoxy group and a chelating ability. 〔2〕 The resin composition according to 〔1〕, wherein the chelate modification amount of the component (A-1) is 0.3 mass% to 10 mass%. 〔3〕The resin composition according to 〔1〕or 〔2〕, wherein the ratio W(A-1) / W(C) of the mass W(A-1) of the (A-1) component to the mass W(C) of the (C) component is 0.01 to 1.0. 〔4〕The resin composition according to any one of 〔1〕to 〔3〕, wherein the amount of the (B) component is 40% by mass or more based on 100% by mass of the non-volatile components of the resin composition. 〔5〕The resin composition according to any one of 〔1〕to 〔4〕, wherein the (C) component has a number average molecular weight of 1000 or more. 〔6〕The resin composition according to any one of 〔1〕to 〔5〕, further comprising a (D) curing agent. 〔7〕The resin composition according to any one of 〔1〕to 〔6〕, further comprising an (E) curing accelerator. 〔8〕The resin composition according to any one of 〔1〕to 〔7〕, which is for a sealing layer. 〔9〕A cured product of the resin composition according to any one of 〔1〕to 〔8〕. 〔10〕A resin sheet comprising a support and a resin composition layer formed on the support and containing the resin composition according to any one of 〔1〕to 〔8〕. 〔11〕A circuit board containing a cured product of the resin composition according to any one of 〔1〕to 〔8〕. 〔12〕A semiconductor chip package containing a cured product of the resin composition according to any one of 〔1〕to 〔8〕. 〔13〕A semiconductor device comprising the circuit board according to 〔11〕or the semiconductor chip package according to 〔12〕.

Advantages of the Invention

[0011] According to the present invention, there can be provided a resin composition capable of obtaining a cured product excellent in warpage suppression and adhesion to a conductor layer; a cured product of the resin composition; and a resin sheet, a circuit board, a semiconductor chip package, and a semiconductor device using the resin composition.

Brief Description of the Drawings

[0012]

Figure 1

[0013] Hereinafter, the present invention will be described with reference to embodiments and examples. However, the present invention is not limited to the embodiments and examples shown below, and can be arbitrarily modified and implemented without departing from the scope of the claims and their equivalents.

[0014] [1. Overview of Resin Composition] The resin composition according to an embodiment of the present invention contains, in combination, (A) an epoxy resin, (B) an inorganic filler, and (C) an elastomer. And, the (A) epoxy resin contains an epoxy resin having a structure containing an (A-1) epoxy group and a chelating ability. In the following description, the “epoxy resin having a structure containing an (A-1) epoxy group and a chelating ability” may be referred to as “(A-1) chelate type epoxy resin”. Also, in the following description, the “structure having a chelating ability” may be referred to as “chelating ability structure”.

[0015] The resin composition according to the present embodiment can obtain a cured product by thermosetting. And, the obtained cured product can be excellent in suppressing warpage and adhesion to the conductor layer. Also, the cured product of the resin composition according to the present embodiment can usually be excellent in adhesion to silicon. Further, the resin composition according to the present embodiment preferably has a low minimum melt viscosity, and preferably obtains a cured product having a small tensile elastic modulus.

[0016] The resin composition according to the present embodiment may further contain an arbitrary component in combination with the above-described components. For example, the resin composition may contain (D) a curing agent, (E) a curing accelerator, and the like.

[0017] [2. (A) Epoxy Resin] The resin composition according to this embodiment contains an (A) epoxy resin as the component (A). The (A) epoxy resin is a curable resin having an epoxy group.

[0018] The (A) epoxy resin according to this embodiment contains an (A-1) chelate-type epoxy resin as the component (A-1). The (A-1) chelate-type epoxy resin contains an epoxy group and a chelating ability structure.

[0019] The chelating ability structure represents a structure having a chelating ability. This chelating ability structure usually contains at least one type of atom selected from the group consisting of oxygen and nitrogen. In the following description, an atom selected from the group consisting of oxygen and nitrogen may be referred to as a "specific atom". One chelating ability structure usually contains a plurality of specific atoms. Since the plurality of specific atoms are generally not directly bonded, there is a molecular chain connecting the specific atoms between them. That is, the specific atoms are usually connected by a molecular chain. Here, the atoms contained in the molecular chain do not include oxygen atoms and nitrogen atoms. The number of atoms in the molecular chain is usually 1 or more, preferably 2 or more, and preferably 6 or less. Here, the number of atoms in the molecular chain connecting the specific atoms represents the minimum number of atoms between the specific atoms connected by the molecular chain. Therefore, even when a branched chain branched from the molecular chain is bonded to the molecular chain, the number of atoms contained in the branched chain is not included in the number of atoms in the molecular chain. Therefore, the chelating ability structure can preferably be a structure containing adjacent specific atoms via 1 to 6, more preferably 2 to 6 atoms. In this chelating ability structure, some or all of the specific atoms can function as coordination atoms.

[0020] The chelating ability structure preferably contains an oxygen atom as a specific atom. More preferably, at least one of the oxygen atoms as specific atoms is derived from a hydroxy group. That is, it is more preferable that the chelating ability structure contains a hydroxy group and the oxygen atom contained in the hydroxy group is a specific atom of the chelating ability structure. Furthermore, it is more preferable that at least one of the oxygen atoms as the specific atom is derived from a carbonyl group. That is, it is more preferable that the chelating ability structure contains a carbonyl group, and the oxygen atom contained in the carbonyl group is the specific atom of the chelating ability structure.

[0021] When the chelating ability structure contains a plurality of oxygen atoms, it is preferable that these oxygen atoms include oxygen atoms linked by a molecular chain of two atoms. That is, it is preferable that two certain oxygen atoms contained in the chelating ability structure are adjacent via two atoms. The chelating ability structure may contain only one set or two or more sets of a pair of two oxygen atoms adjacent via two atoms as described above.

[0022] The chelating ability structure usually contains carbon atoms and hydrogen atoms in combination with the specific atom. Further, the chelating ability structure may further contain any heteroatom other than oxygen atoms and nitrogen atoms. Preferred examples of any heteroatom that the chelating ability structure may contain include phosphorus atoms and sulfur atoms. The type of any heteroatom may be one type or two or more types. Also, the number of any heteroatom may be one or two or more.

[0023] Specific examples of preferable chelating ability structures include carboxy groups and phosphate groups. Among them, phosphate groups are more preferable. The chelating ability structure may be present in any of the basic skeleton, side chain, or terminal of the (A-1) chelate-type epoxy resin. The chelating ability structures contained in the (A-1) chelate-type epoxy resin may be one type or two or more types. Also, the number of chelating ability structures contained in one molecule of the (A-1) chelate-type epoxy resin may be one or two or more.

[0024] (A-1) The number of epoxy groups contained in one molecule of the chelate-type epoxy resin may be one or two or more.

[0025] (A-1) Chelating epoxy resins preferably contain an aromatic structure in their molecules. The aromatic structure is a chemical structure generally defined as aromatic, and includes polycyclic aromatics and aromatic heterocycles. When using an (A-1) chelating epoxy resin containing an aromatic ring structure, the heat resistance of the cured product of the resin composition can be improved.

[0026] (A-1) Chelating epoxy resins may include a structure obtained by reacting an epoxy resin not containing a chelating structure with a compound containing a chelating structure. For example, an (A-1) chelating epoxy resin containing a phosphate group may include a structure obtained by reacting an epoxy resin not containing a chelating structure with phosphoric acids. Examples of phosphoric acids include phosphoric acid (H3PO4), phosphonic acid (H3PO3), hypophosphorous acid (H3PO2), diphosphoric acid (H4P2O7), and polyphosphoric acids such as triphosphoric acid.

[0027] (A-1) Chelating epoxy resins can be produced, for example, by a method including glycidyl etherification of the hydroxyl group of a compound having a phenolic or alcoholic hydroxyl group and a chelating structure. Also, (A-1) chelating epoxy resins can be produced, for example, by a method including reacting an epoxy resin not containing a chelating structure with a compound containing a chelating structure. To give a specific example, an (A-1) chelating epoxy resin containing a phosphate group can be produced by the method described in International Publication No. 2021 / 039380.

[0028] The method for producing (A-1) chelate-type epoxy resin, which includes reacting an epoxy resin not containing a chelating ability structure with a compound containing a chelating ability structure, usually involves the reaction of a compound containing a chelating ability structure with the epoxy groups of the epoxy resin to obtain (A-1) chelate-type epoxy resin. At this time, the reaction amount of the compound containing a chelating ability structure is represented by the chelate modification amount. Specifically, the chelate modification amount is represented by the ratio of the compound containing a chelating ability structure that has reacted with the epoxy resin to 100% by mass of the epoxy resin not containing a chelating ability structure. The above chelate modification amount is preferably 0.3% by mass or more, more preferably 0.5% by mass or more, particularly preferably 0.8% by mass or more, and preferably 10% by mass or less, more preferably 5.0% by mass or less, particularly preferably 3.0% by mass or less. When the chelate modification amount is within the above range, the adhesion of the cured product of the resin composition can be effectively increased.

[0029] As the (A-1) chelate-type epoxy resin, commercially available products may be used. Examples of commercially available (A-1) chelate-type epoxy resins include "EP-49-10P" and "EP-49-10P2" (both are reaction products of bisphenol A-type epoxy resin and phosphoric acid) manufactured by ADEKA Corporation; "EP-49-23" manufactured by ADEKA Corporation.

[0030] The (A-1) chelate-type epoxy resin may be used alone or in combination of two or more.

[0031] Epoxy resins include epoxy resins that are liquid at a temperature of 20°C (hereinafter sometimes referred to as "liquid epoxy resins") and epoxy resins that are solid at a temperature of 20°C (hereinafter sometimes referred to as "solid epoxy resins"). The (A-1) chelate-type epoxy resin contained in the resin composition may be only a liquid epoxy resin, only a solid epoxy resin, or a combination of a liquid epoxy resin and a solid epoxy resin. The (A-1) chelate-type epoxy resin preferably contains a liquid epoxy resin, and more preferably contains only a liquid epoxy resin.

[0032] (A-1) The epoxy equivalent of the chelate-type epoxy resin is preferably 50 g / eq. to 5,000 g / eq., more preferably 60 g / eq. to 3,000 g / eq., still more preferably 80 g / eq. to 2,000 g / eq., and particularly preferably 110 g / eq. to 1,000 g / eq. The epoxy equivalent represents the mass of the resin per equivalent of epoxy groups. This epoxy equivalent can be measured in accordance with JIS K7236.

[0033] (A-1) The weight average molecular weight (Mw) of the chelate-type epoxy resin is preferably 100 to 5,000, more preferably 250 to 3,000, and still more preferably 400 to 1,500. Also, the number average molecular weight of the (A-1) chelate-type epoxy resin is usually less than 5,000, preferably less than 3,000. The weight average molecular weight and number average molecular weight of the resin can be measured as values in terms of polystyrene by gel permeation chromatography (GPC) method.

[0034] The amount of the (A-1) chelate-type epoxy resin in the resin composition is preferably 0.01% by mass or more, more preferably 0.1% by mass or more, and particularly preferably 0.5% by mass or more, based on 100% by mass of the non-volatile components of the resin composition, and preferably 20% by mass or less, more preferably 10% by mass or less, and particularly preferably 5% by mass or less. When the amount of the (A-1) chelate-type epoxy resin is within the above range, the adhesiveness can be effectively improved while suppressing warping, and further, usually, the minimum melt viscosity can be effectively lowered.

[0035] The amount of the chelate-type epoxy resin (A-1) in the resin composition is preferably 0.1% by mass or more, more preferably 1% by mass or more, particularly preferably 2% by mass or more, and preferably 40% by mass or less, more preferably 30% by mass or less, particularly preferably 20% by mass or less, based on 100% by mass of the resin components of the resin composition. Unless otherwise specified, the resin components of the resin composition refer to the components excluding the (B) inorganic filler among the non-volatile components of the resin composition. When the amount of the chelate-type epoxy resin (A-1) is within the above range, the adhesiveness can be effectively improved while suppressing warpage, and usually, the minimum melt viscosity can be effectively reduced.

[0036] Based on 100% by mass of the total amount of the epoxy resin (A), the mass of the chelate-type epoxy resin (A-1) is preferably 1% by mass or more, more preferably 3% by mass or more, particularly preferably 5% by mass or more, and preferably 80% by mass or less, more preferably 60% by mass or less, particularly preferably 40% by mass or less. When the amount of the chelate-type epoxy resin (A-1) is within the above range, the adhesiveness can be effectively improved while suppressing warpage, and usually, the minimum melt viscosity can be effectively reduced.

[0037] The ratio W(A-1) / W(C) of the mass W(A-1) of the chelate-type epoxy resin (A-1) to the mass W(C) of the elastomer (C) in the resin composition is preferably within a specific range. Specifically, the ratio W(A-1) / W(C) is preferably 0.01 or more, more preferably 0.02 or more, particularly preferably 0.04 or more, and preferably 1.0 or less, more preferably 0.8 or less, particularly preferably 0.7 or less. When the ratio W(A-1) / W(C) is within the above range, the adhesiveness can be effectively improved while suppressing warpage, and usually, the minimum melt viscosity can be effectively reduced.

[0038] (A) The epoxy resin may contain, as component (A-2), an epoxy resin other than the chelate-type epoxy resin (A-1) in combination with the chelate-type epoxy resin (A-1). In the following description, the "epoxy resin other than the chelate-type epoxy resin (A-1)" may be referred to as "(A-2) any epoxy resin".

[0039] Examples of (A-2) any epoxy resin include novolac epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, dicyclopentadiene type epoxy resin, trisphenol type epoxy resin, naphthol novolac type epoxy resin, phenol novolac type epoxy resin, tert-butyl-catechol type epoxy resin, naphthalene type epoxy resin, naphthol type epoxy resin, anthracene type epoxy resin, glycidylamine type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, linear aliphatic epoxy resin, epoxy resin having a butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, spiro ring-containing epoxy resin, cyclohexane type epoxy resin, cyclohexanedimethanol type epoxy resin, naphthylene ether type epoxy resin, trimethylol type epoxy resin, tetraphenylethane type epoxy resin, isocyanurate type epoxy resin, phenolphthalimide type epoxy resin, and the like. (A-2) Any epoxy resin may be used alone or in combination of two or more.

[0040] (A-2) Any epoxy resin preferably contains an epoxy resin containing an aromatic structure from the viewpoint of obtaining a cured product with excellent heat resistance. Examples of the (A-2) any epoxy resin containing an aromatic structure include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, dicyclopentadiene type epoxy resin, trisphenol type epoxy resin, naphthol novolak type epoxy resin, phenol novolak type epoxy resin, tert-butyl-catechol type epoxy resin, naphthalene type epoxy resin, naphthol type epoxy resin, anthracene type epoxy resin, biscylenol type epoxy resin, glycidylamine type epoxy resin having an aromatic structure, cresol novolak type epoxy resin, biphenyl type epoxy resin, linear aliphatic epoxy resin having an aromatic structure, epoxy resin having a butadiene structure having an aromatic structure, alicyclic epoxy resin having an aromatic structure, heterocyclic epoxy resin, spiro ring-containing epoxy resin having an aromatic structure, cyclohexanedimethanol type epoxy resin having an aromatic structure, naphthylene ether type epoxy resin, trimethylol type epoxy resin having an aromatic structure, tetraphenylethane type epoxy resin having an aromatic structure, and the like.

[0041] (A-2) Any epoxy resin preferably contains an epoxy resin having two or more epoxy groups in one molecule. The ratio of the epoxy resin having two or more epoxy groups in one molecule is preferably 50% by mass or more, more preferably 60% by mass or more, and particularly preferably 70% by mass or more with respect to 100% by mass of the non-volatile component of (A-2) any epoxy resin.

[0042] (A-2) Any epoxy resin may be only a liquid epoxy resin, only a solid epoxy resin, or a combination of a liquid epoxy resin and a solid epoxy resin.

[0043] As the liquid epoxy resin, a liquid epoxy resin having two or more epoxy groups in one molecule is preferable. (A-2) Preferable liquid epoxy resins that can be used as any epoxy resin include, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, naphthalene type epoxy resin, glycidylamine type epoxy resin, phenol novolac type epoxy resin, cyclohexane type epoxy resin, cyclohexanedimethanol type epoxy resin, and epoxy resin having a butadiene structure.

[0044] (A-2) Specific examples of the liquid epoxy resin that can be used as any epoxy resin include "HP4032", "HP4032D", "HP4032SS" (naphthalene type epoxy resin) manufactured by DIC Corporation; "828US", "828EL", "jER828EL", "825", "Epicoat 828EL" (bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER807", "1750" (bisphenol F type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER152" (phenol novolac type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "630", "630LSD", "604" (glycidylamine type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "ED-523T" (glycerol type epoxy resin) manufactured by ADEKA Corporation; "EP-3950L", "EP-3980S" (glycidylamine type epoxy resin) manufactured by ADEKA Corporation; "EP-4088S" (dicyclopentadiene type epoxy resin) manufactured by ADEKA Corporation; "ZX-1059" (a mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin) manufactured by Nippon Steel Chemical & Material Co., Ltd.; "PB-3600" manufactured by Daicel Corporation, "JP-100", "JP-200" (epoxy resin having a butadiene structure) manufactured by Nippon Soda Co., Ltd.; "ZX1658", "ZX1658GS" (liquid 1,4-glycidylcyclohexane type epoxy resin) manufactured by Nippon Steel Chemical & Material Co., Ltd., etc. These may be used alone or in combination of two or more.

[0045] As the solid epoxy resin, a solid epoxy resin having three or more epoxy groups in one molecule is preferable, and an aromatic solid epoxy resin having three or more epoxy groups in one molecule is more preferable. (A-2) Preferable solid epoxy resins that can be used as any epoxy resin include, for example, bixylenol type epoxy resin, naphthalene type epoxy resin, naphthalene type tetrafunctional epoxy resin, naphthol novolak type epoxy resin, cresol novolak type epoxy resin, dicyclopentadiene type epoxy resin, tris-phenol type epoxy resin, naphthol type epoxy resin, biphenyl type epoxy resin, naphthylene ether type epoxy resin, anthracene type epoxy resin, bisphenol A type epoxy resin, bisphenol AF type epoxy resin, phenol aralkyl type epoxy resin, tetraphenylethane type epoxy resin, and phenolphthalimide type epoxy resin.

[0046] (A-2) Specific examples of solid epoxy resins that can be used as any epoxy resin include "HP4032H" (naphthalene-type epoxy resin) manufactured by DIC Corporation; "HP-4700" and "HP-4710" (naphthalene-type tetrafunctional epoxy resins) manufactured by DIC Corporation; "N-690" (cresol novolak-type epoxy resin) manufactured by DIC Corporation; "N-695" (cresol novolak-type epoxy resin) manufactured by DIC Corporation; "HP-7200", "HP-7200HH", "HP-7200H", "HP-7200L" (dicyclopentadiene-type epoxy resins) manufactured by DIC Corporation; "EXA-7311", "EXA-7311-G3", "EXA-7311-G4", "EXA-7311-G4S", "HP6000", "HP6000L" (naphthylene ether-type epoxy resins) manufactured by DIC Corporation; "EPPN-502H" (trisphenol-type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; "NC7000L" (naphthol novolak-type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; "NC3000H", "NC3000", "NC3000L", "NC3000FH", "NC3100" (biphenyl-type epoxy resins) manufactured by Nippon Kayaku Co., Ltd.; "ESN475V", "ESN4100V" (naphthalene-type epoxy resins) manufactured by Nippon Steel Chemical & Material Co., Ltd.; "ESN485" (naphthol-type epoxy resin) manufactured by Nippon Steel Chemical & Material Co., Ltd.; "ESN375" (dihydroxynaphthalene-type epoxy resin) manufactured by Nippon Steel Chemical & Material Co., Ltd.; "YX4000H", "YX4000", "YX4000HK", "YL7890" (bixylenol-type epoxy resins) manufactured by Mitsubishi Chemical Corporation; "YL6121" (biphenyl-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX8800" (anthracene-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX7700" (phenol aralkyl-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "PG-100" and "CG-500" manufactured by Osaka Gas Chemical Co., Ltd.; "YL7760" (bisphenol AF-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YL7800" (fluorene-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER1031S" (tetraphenylethane-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "WHR991S" (phenolphthalimide-type epoxy resin) manufactured by Nippon Kayaku Co., Ltd., etc.These may be used alone or in combination of two or more types.

[0047] (A-2) The range of the epoxy equivalent of any epoxy resin can be the same as the range of the epoxy equivalent of the chelate-type epoxy resin in (A-1).

[0048] (A-2) The range of the weight average molecular weight and number average molecular weight of any epoxy resin can be the same as the range of the weight average molecular weight and number average molecular weight of the chelate-type epoxy resin in (A-1).

[0049] (A) When using a combination of a liquid epoxy resin and a solid epoxy resin as the epoxy resin, their mass ratio (liquid epoxy resin: solid epoxy resin) is preferably 20:1 to 1:5, more preferably 10:1 to 1:2, and particularly preferably 5:1 to 1:1.

[0050] The amount of the (A) epoxy resin in the resin composition is preferably 1% by mass or more, more preferably 2% by mass or more, and particularly preferably 5% by mass or more, and preferably 40% by mass or less, more preferably 30% by mass or less, and particularly preferably 20% by mass or less, based on 100% by mass of the non-volatile components of the resin composition. When the amount of the (A) epoxy resin is within the above range, the effects of suppressing warping and improving adhesion can be significantly obtained, and usually, the minimum melt viscosity can be effectively reduced.

[0051] The amount of the (A) epoxy resin in the resin composition is preferably 10% by mass or more, more preferably 20% by mass or more, and particularly preferably 30% by mass or more, and preferably 70% by mass or less, more preferably 60% by mass or less, and particularly preferably 50% by mass or less, based on 100% by mass of the resin components of the resin composition. When the amount of the (A) epoxy resin is within the above range, the effects of suppressing warping and improving adhesion can be significantly obtained, and usually, the minimum melt viscosity can be effectively reduced.

[0052] [3. (B) Inorganic filler] The resin composition according to this embodiment contains a (B) inorganic filler as the component (B). The (B) inorganic filler is usually contained in the resin composition in the form of particles.

[0053] As the material of the (B) inorganic filler, an inorganic compound is used. Examples of the material of the (B) inorganic filler include silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, boehmite, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, barium titanate, barium zirconate titanate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate. Among these, silica and alumina are preferred, and silica is particularly preferred. Examples of silica include amorphous silica, fused silica, crystalline silica, synthetic silica, and hollow silica. Also, spherical silica is preferred as the silica. The (B) inorganic filler may be used alone or in combination of two or more.

[0054] Examples of commercially available products of the (B) inorganic filler include "UFP-30" manufactured by Denka Chemical Industry Co., Ltd.; "SP60-05" and "SP507-05" manufactured by Nippon Steel & Sumikin Materials Co., Ltd.; "YC100C", "YA050C", "YA050C-MJE", and "YA010C" manufactured by Admatechs Co., Ltd.; "UFP-30" manufactured by Denka Co., Ltd.; "Silfill NSS-3N", "Silfill NSS-4N", and "Silfill NSS-5N" manufactured by Tokuyama Corporation; "SC2500SQ", "SO-C4", "SO-C2", "SO-C1", and "SC2050-SXF" manufactured by Admatechs Co., Ltd.; and the like.

[0055] (B) The average particle diameter of the inorganic filler is preferably 0.01 μm or more, more preferably 0.05 μm or more, particularly preferably 0.1 μm or more, and preferably 10 μm or less, more preferably 7 μm or less, still more preferably 5 μm or less, from the viewpoint of significantly obtaining the desired effects of the present invention.

[0056] (B) The average particle diameter of the inorganic filler can be measured by the laser diffraction / scattering method based on the Mie scattering theory. Specifically, it can be measured by creating a particle size distribution of the inorganic filler on a volume basis with a laser diffraction / scattering type particle size distribution measuring device and taking the median diameter thereof as the average particle diameter. As the measurement sample, 100 mg of the inorganic filler and 10 g of methyl ethyl ketone can be weighed into a vial and dispersed by ultrasonic waves for 10 minutes. The measurement sample can be used to measure the volume-based particle size distribution of the inorganic filler using a laser diffraction type particle size distribution measuring device with the wavelengths of the light sources used being blue and red and in a flow cell method, and the average particle diameter can be calculated as the median diameter from the obtained particle size distribution. Examples of the laser diffraction type particle size distribution measuring device include "LA-960" manufactured by Horiba, Ltd.

[0057] (B) The specific surface area of the inorganic filler is preferably 1 m 2 / g or more, more preferably 2 m 2 / g or more, particularly preferably 3 m 2 / g or more, from the viewpoint of significantly obtaining the desired effects of the present invention. There is no particular limitation on the upper limit, but it is preferably 60 m 2 / g or less, 50 m 2 / g or less, or 40 m 2 / g or less. The specific surface area can be measured by adsorbing nitrogen gas on the sample surface using a specific surface area measuring device (Macsorb HM-1210 manufactured by Mountech Co., Ltd.) in accordance with the BET method and calculating the specific surface area using the BET multi-point method.

[0058] (B) The inorganic filler is preferably treated with a surface treatment agent from the viewpoints of enhancing moisture resistance and dispersibility. Examples of the surface treatment agent include fluorine-containing silane coupling agents, aminosilane-based coupling agents, epoxysilane-based coupling agents, mercaptosilane-based coupling agents, silane-based coupling agents, alkoxysilanes, organosilazane compounds, titanate-based coupling agents, and the like. The surface treatment agent may be used alone or in any combination of two or more kinds.

[0059] Examples of commercially available surface treatment agents include "KBM403" (3-glycidoxypropyltrimethoxysilane), "KBM803" (3-mercaptopropyltrimethoxysilane), "KBE903" (3-aminopropyltriethoxysilane), "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane), "SZ-31" (hexamethyldisilazane), "KBM103" (phenyltrimethoxysilane), "KBM-4803" (long-chain epoxy type silane coupling agent), "KBM-7103" (3,3,3-trifluoropropyltrimethoxysilane), etc., all manufactured by Shin-Etsu Chemical Co., Ltd.

[0060] From the viewpoint of improving the dispersibility of the (B) inorganic filler, the degree of surface treatment with the surface treatment agent preferably falls within a specific range. Specifically, it is preferable that 100% by mass of the inorganic filler is surface-treated with 0.2% to 5% by mass of the surface treatment agent, more preferably 0.2% to 3% by mass of the surface treatment agent, and even more preferably 0.3% to 2% by mass of the surface treatment agent.

[0061] The degree of surface treatment with the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the inorganic filler. From the viewpoint of improving the dispersibility of the inorganic filler, the amount of carbon per unit surface area of the inorganic filler is preferably 0.02 mg / m 2 or more, and preferably 0.1 mg / m 2The above is more preferable, 0.2 mg / m 2 The above is even more preferable. On the other hand, from the viewpoint of suppressing the increase in the melt viscosity of the resin composition, 1.0 mg / m 2 or less is preferable, 0.8 mg / m 2 or less is more preferable, and 0.5 mg / m 2 or less is even more preferable.

[0062] (B) The amount of carbon per unit surface area of the inorganic filler can be measured after washing the surface-treated inorganic filler with a solvent (for example, methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent is added to the inorganic filler surface-treated with a surface treatment agent, and ultrasonic cleaning is performed at 25°C for 5 minutes. After removing the supernatant and drying the solid content, the amount of carbon per unit surface area of the inorganic filler can be measured using a carbon analyzer. As the carbon analyzer, "EMIA-320V" manufactured by Horiba, Ltd. etc. can be used.

[0063] The amount of (B) inorganic filler in the resin composition is preferably 40% by mass or more, more preferably 50% by mass or more, still more preferably 60% by mass or more, particularly preferably 70% by mass or more, and preferably 95% by mass or less, more preferably 90% by mass or less, still more preferably 85% by mass or less, particularly preferably 80% by mass or less, based on 100% by mass of the non-volatile components of the resin composition. Generally, when the amount of the inorganic filler is large as described above, problems such as an increase in the minimum melt viscosity of the resin composition and a decrease in the adhesion of the cured product of the resin composition are likely to occur. On the contrary, according to the resin composition according to the present embodiment, even when the amount of the inorganic filler is large as described above, the adhesion of the cured product can be improved, and more preferably, the minimum melt viscosity can be lowered. Therefore, when a large amount of (B) inorganic filler of the above lower limit value or more is included, the advantages of the resin composition according to the present embodiment can be utilized particularly effectively. Further, when the amount of (B) inorganic filler is below the above upper limit value, the effects of suppressing warping and improving adhesion can be significantly obtained, and usually, the minimum melt viscosity can be effectively lowered.

[0064] [4. (C) Elastomer] The resin composition according to this embodiment contains a (C) elastomer as the component (C). The (C) elastomer does not include those corresponding to the above-described components (A) to (B). The (C) elastomer is a resin having flexibility, and preferably is a resin having rubber elasticity or a resin that polymerizes with other components to exhibit rubber elasticity. Examples of the rubber elasticity include a resin that exhibits an elastic modulus of 1 GPa or less when a tensile test is performed at a temperature of 25°C and a humidity of 40% RH in accordance with Japanese Industrial Standard (JIS K7161). The (C) elastomer is usually an amorphous resin component that can be dissolved in an organic solvent. The (C) elastomer may be used alone or in combination of two or more in any ratio. According to the (C) elastomer, the elastic modulus of the cured product of the resin composition can be lowered.

[0065] The (C) elastomer preferably has a high molecular weight. The number average molecular weight (Mn) of the (C) elastomer is preferably 1,000 or more, more preferably 1,500 or more, still more preferably 2,000 or more, still more preferably 3,000 or more, and particularly preferably 5,000 or more. When the (C) elastomer has a high molecular weight as described above, the effects of suppressing warpage and improving adhesion can be remarkably obtained, and further, usually, the minimum melt viscosity can be effectively lowered. There is no particular limitation on the upper limit of the number average molecular weight, but it is preferably 1,000,000 or less, and more preferably 900,000 or less. The number average molecular weight (Mn) is the number average molecular weight in terms of polystyrene measured using GPC (gel permeation chromatography).

[0066] (C) The elastomer is preferably at least one selected from resins having a glass transition temperature (Tg) of 25°C or lower and resins that are liquid at 25°C or lower. The glass transition temperature of the resin having a glass transition temperature (Tg) of 25°C or lower is preferably 20°C or lower, more preferably 15°C or lower. The lower limit of the glass transition temperature is not particularly limited, but can usually be -15°C or higher. Also, the resin that is liquid at 25°C is preferably a resin that is liquid at 20°C or lower, more preferably a resin that is liquid at 15°C or lower. The glass transition temperature can be measured by DSC (differential scanning calorimetry) at a heating rate of 5°C / min.

[0067] (C) The elastomer is preferably a resin having at least one structure selected from a polybutadiene structure, a polysiloxane structure, a poly(meth)acrylate structure, a polyalkylene structure, a polyalkyleneoxy structure, a polyisoprene structure, a polyisobutylene structure, a polycarbonate structure, and a polystyrene structure in the molecule. The term “(meth)acrylate” is a term encompassing methacrylate, acrylate, and combinations thereof. These structures may be included in the main chain or the side chain of the molecule of the (C) elastomer.

[0068] Examples of the elastomer include resins containing a polybutadiene structure. The polybutadiene structure may be contained in the main chain or in the side chain. Also, part or all of the polybutadiene structure may be hydrogenated. A resin containing a polybutadiene structure may be referred to as a "polybutadiene resin". Specific examples of the polybutadiene resin include "Ricon 130MA8", "Ricon 130MA13", "Ricon 130MA20", "Ricon 131MA5", "Ricon 131MA10", "Ricon 131MA17", "Ricon 131MA20", "Ricon 184MA6" (polybutadiene containing acid anhydride groups) manufactured by Cray Valley Co., Ltd.; "GQ-1000" (polybutadiene with hydroxyl and carboxyl groups introduced), "G-1000", "G-2000", "G-3000" (polybutadiene with hydroxyl groups at both ends), "GI-1000", "GI-2000", "GI-3000" (hydrogenated polybutadiene with hydroxyl groups at both ends) manufactured by Nippon Soda Co., Ltd.; "FCA-061L" (hydrogenated polybutadiene skeleton epoxy resin) manufactured by Nagase ChemteX Corporation, etc. Specific examples of the polybutadiene resin also include phenolic hydroxyl group-containing butadiene resins; polyimide resins having a polybutadiene structure, a urethane structure, and an imide structure in the molecule. The polyimide resin can be produced as a linear polyimide resin (the polyimide described in JP-A-2006-37083 and WO 2008 / 153208) using hydroxyl group-terminated polybutadiene, a diisocyanate compound, and a tetrabasic acid anhydride as raw materials. The content rate of the butadiene structure in the polyimide resin is preferably 60% by mass to 95% by mass, more preferably 75% by mass to 85% by mass. Details of the polyimide resin can be referred to the descriptions in JP-A-2006-37083 and WO 2008 / 153208, and this content is incorporated herein.

[0069] (C) Examples of the elastomer include resins containing a poly(meth)acrylate structure. The resin containing a poly(meth)acrylate structure may be referred to as a "poly(meth)acrylic resin". Specific examples of the poly(meth)acrylic resin include Taisen Resin manufactured by Nagase ChemteX Corporation; "ME-2000", "W-116.3", "W-197C", "KG-25", "KG-3000" manufactured by Negami Industries Co., Ltd.; "ARUFON UH-2000" manufactured by Toagosei Co., Ltd., and the like.

[0070] (C) Examples of the elastomer include resins containing a polycarbonate structure. The resin containing a polycarbonate structure may be referred to as a "polycarbonate resin". Specific examples of the polycarbonate resin include "FPC0220", "FPC2136" manufactured by Mitsubishi Gas Chemical Company, Inc.; "T6002", "T6001" (polycarbonate diol) manufactured by Asahi Kasei Chemicals Corporation; "C-1090", "C-2090", "C-3090" (polycarbonate diol) manufactured by Kuraray Co., Ltd., and the like. Further, specific examples of the polycarbonate resin include polyimide resins having an imide structure, a urethane structure and a polycarbonate structure in the molecule. The polyimide resin can be produced as a linear polyimide resin using a hydroxyl group-terminated polycarbonate, a diisocyanate compound and a tetracarboxylic dianhydride as raw materials. The content of the carbonate structure of the polyimide resin is preferably 60% by mass to 95% by mass, more preferably 75% by mass to 85% by mass. Details of the polyimide resin can be referred to the description in International Publication No. 2016 / 129541, and this content is incorporated herein.

[0071] (C) Examples of the elastomer include resins containing a polysiloxane structure. A resin containing a polysiloxane structure may be referred to as a "siloxane resin". Specific examples of the siloxane resin include "SMP-2006", "SMP-2003PGMEA", "SMP-5005PGMEA" manufactured by Shin-Etsu Silicone Co., Ltd., amine group-terminated polysiloxane, and linear polyimide using tetracarboxylic dianhydride as a raw material (International Publication No. 2010 / 053185, Japanese Patent Application Laid-Open No. 2002-12667, Japanese Patent Application Laid-Open No. 2000-319386, etc.).

[0072] (C) Examples of the elastomer include resins containing a polyalkylene structure or a polyalkyleneoxy structure. A resin containing a polyalkylene structure may be referred to as an "alkylene resin". Also, a resin containing a polyalkyleneoxy structure may be referred to as an "alkyleneoxy resin". The polyalkyleneoxy structure is preferably a polyalkyleneoxy structure having 2 to 15 carbon atoms, more preferably a polyalkyleneoxy structure having 3 to 10 carbon atoms, and particularly preferably a polyalkyleneoxy structure having 5 to 6 carbon atoms. Specific examples of the alkylene resin and the alkyleneoxy resin include "PTXG-1000", "PTXG-1800", etc. manufactured by Asahi Kasei Fibers Corporation.

[0073] (C) Examples of the elastomer include resins containing a polyisoprene structure. A resin containing a polyisoprene structure may be referred to as an "isoprene resin". Specific examples of the isoprene resin include "KL-610", "KL613", etc. manufactured by Kuraray Co., Ltd.

[0074] (C) Examples of the elastomer include resins containing a polyisobutylene structure. A resin containing a polyisobutylene structure may be referred to as an "isobutylene resin". Specific examples of the isobutylene resin include "SIBSTAR-073T" (styrene-isobutylene-styrene triblock copolymer), "SIBSTAR-042D" (styrene-isobutylene diblock copolymer), etc. manufactured by Kaneka Corporation.

[0075] (C) Examples of the elastomer include resins containing a polystyrene structure. A resin containing a polystyrene structure may be referred to as a "polystyrene resin". The polystyrene resin may be a copolymer containing any repeating unit different from the above-mentioned styrene unit in combination with the styrene unit, or may be a hydrogenated polystyrene resin. Examples of the polystyrene resin include styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (SEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer (SEEPS), styrene-butadiene-butylene-styrene block copolymer (SBBS), styrene-butadiene diblock copolymer, hydrogenated styrene-butadiene block copolymer, hydrogenated styrene-isoprene block copolymer, hydrogenated styrene-butadiene random copolymer, styrene-maleic anhydride copolymer, etc. Specific examples of the polystyrene resin include hydrogenated styrene-based thermoplastic elastomers "H1041", "Taftec H1043", "Taftec P2000", "Taftec MP10" (manufactured by Asahi Kasei Corporation); epoxidized styrene-butadiene thermoplastic elastomers "Epofrend AT501", "CT310" (manufactured by Daicel Corporation); modified styrene-based elastomers having a hydroxyl group "Septon HG252" (manufactured by Kuraray Co., Ltd.); modified styrene-based elastomers having a carboxyl group "Taftec N503M", modified styrene-based elastomers having an amino group "Taftec N501", modified styrene-based elastomers having an acid anhydride group "Taftec M1913" (manufactured by Asahi Kasei Chemicals Corporation); unmodified styrene-based elastomers "Septon S8104" (manufactured by Kuraray Co., Ltd.); styrene-ethylene / butylene-styrene block copolymers "FG1924" (manufactured by Kraton Corporation), "EF-40" (manufactured by CRAY VALLEY).

[0076] Among the above, as the (C) elastomer, a resin containing at least one structure selected from the group consisting of a polybutadiene structure, a polycarbonate structure, and a poly(meth)acrylate structure in the molecule is more preferable. Further, as the (C) elastomer, a resin having a polybutadiene structure or a polycarbonate structure in the molecule is particularly preferable. The (C) elastomer having a polybutadiene structure or a polycarbonate structure generally has low compatibility with the (A-1) chelate-type epoxy resin. Therefore, these (C) elastomers are microscopically phase-separated from the (A-1) chelate-type epoxy resin and can form minute domains having excellent flexibility. In the cured product of the resin composition, the flexibility of the domains is exhibited, so that the elastic modulus of the cured product can be effectively lowered, and thus warpage can be particularly effectively suppressed without impairing adhesion.

[0077] (C) The elastomer may have a functional group capable of reacting with the (A) epoxy resin. When the (C) elastomer reacts with the (A) epoxy resin, the mechanical strength of the cured product of the resin composition can be increased. The functional groups capable of reacting with the (A) epoxy resin include functional groups that appear by heating. The functional groups capable of reacting with the (A) epoxy resin can be one or more functional groups selected from the group consisting of a hydroxy group, a carboxy group, an acid anhydride group, a phenolic hydroxy group, an epoxy group, an isocyanate group, and a urethane group. Among them, as the functional group, a hydroxy group, an acid anhydride group, a phenolic hydroxy group, an epoxy group, an isocyanate group, and a urethane group are preferable, a hydroxy group, an acid anhydride group, a phenolic hydroxy group, and an epoxy group are more preferable, and a phenolic hydroxy group is particularly preferable. The number average molecular weight (Mn) of the (C) elastomer containing a functional group is preferably 5,000 or more.

[0078] The amount of the (C) elastomer in the resin composition is preferably 1% by mass or more, more preferably 2% by mass or more, still more preferably 3% by mass or more, and preferably 20% by mass or less, more preferably 15% by mass or less, still more preferably 10% by mass or less, based on 100% by mass of the non-volatile components of the resin composition. When the amount of the (C) elastomer is within the above range, the effects of suppressing warpage and improving adhesion can be remarkably obtained, and usually, the minimum melt viscosity can be effectively lowered.

[0079] The amount of the (C) elastomer in the resin composition is preferably 5% by mass or more, more preferably 10% by mass or more, still more preferably 20% by mass or more, and preferably 80% by mass or less, more preferably 60% by mass or less, still more preferably 50% by mass or less, based on 100% by mass of the resin components of the resin composition. When the amount of the (C) elastomer is within the above range, the effects of suppressing warpage and improving adhesion can be remarkably obtained, and usually, the minimum melt viscosity can be effectively lowered.

[0080] [5. (D) Curing Agent] The resin composition according to the present embodiment may further contain, as an optional component, a (D) curing agent in combination with the above-described components (A) to (C). The (D) curing agent as this (D) component does not include those corresponding to the above-described components (A) to (C). The (D) curing agent may have a function of reacting with the (A) epoxy resin to cure the resin composition.

[0081] Examples of the (D) curing agent include phenolic curing agents, naphtholic curing agents, active ester curing agents, amine curing agents, acid anhydride curing agents, benzoxazine curing agents, cyanate ester curing agents, carbodiimide curing agents, thiol curing agents, etc. Among them, phenolic curing agents, naphtholic curing agents, and active ester curing agents are preferable, and phenolic curing agents and active ester curing agents are particularly preferable. The (D) curing agent may be used alone or in combination of two or more.

[0082] As the phenolic curing agent and the naphtholic curing agent, those having a novolak structure are preferable from the viewpoints of heat resistance and water resistance. Further, from the viewpoint of adhesion, a nitrogen-containing phenolic curing agent is preferable, and a phenolic curing agent containing a triazine skeleton is more preferable.

[0083] Specific examples of the phenolic curing agent and the naphtholic curing agent include, for example, "MEH-7700", "MEH-7810", "MEH-7851", "MEH-8000H" manufactured by Meiwa Kasei Co., Ltd.; "NHN", "CBN", "GPH" manufactured by Nippon Kayaku Co., Ltd.; "SN-170", "SN-180", "SN-190", "SN-475", "SN-485", "SN-495", "SN-495V", "SN-375", "SN-395" manufactured by Nippon Steel Chemical & Material Co., Ltd.; "TD-2090", "TD-2090-60M", "LA-7052", "LA-7054", "LA-1356", "LA-3018", "LA-3018-50P", "EXB-9500", "HPC-9500", "KA-1160", "KA-1163", "KA-1165" manufactured by DIC Corporation; "GDP-6115L", "GDP-6115H", "ELPC75", etc. manufactured by Gunei Chemical Industry Co., Ltd.

[0084] As the active ester curing agent, a compound having one or more active ester groups in one molecule can be used. Among them, as the active ester curing agent, compounds having two or more highly reactive ester groups in one molecule, such as phenolic esters, thiophenolic esters, N-hydroxyamine esters, esters of heterocyclic hydroxy compounds, etc., are preferred. The active ester curing agent is preferably obtained by a condensation reaction of a carboxylic acid compound and / or a thiocarboxylic acid compound with a hydroxy compound and / or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferred, and an active ester curing agent obtained from a carboxylic acid compound and a phenol compound and / or a naphthol compound is more preferred. Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, pyromellitic acid, etc. Examples of the phenol compound or naphthol compound include hydroquinone, resorcinol, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucin, benzenetriol, dicyclopentadiene type diphenol compound, phenol novolak, etc. Here, the "dicyclopentadiene type diphenol compound" refers to a diphenol compound obtained by condensing two molecules of phenol with one molecule of dicyclopentadiene.

[0085] Preferable specific examples of the active ester-based curing agent include an active ester-based curing agent containing a dicyclopentadiene type diphenol structure, an active ester-based curing agent containing a naphthalene structure, an active ester-based curing agent containing an acetylated product of phenol novolak, and an active ester-based curing agent containing a benzoylated product of phenol novolak. Among them, an active ester-based curing agent containing a naphthalene structure and an active ester-based curing agent containing a dicyclopentadiene type diphenol structure are more preferable. The "dicyclopentadiene type diphenol structure" represents a divalent structural unit composed of phenylene-dicyclopentylene-phenylene.

[0086] Commercially available products of the active ester-based curing agent include, as an active ester-based curing agent containing a dicyclopentadiene type diphenol structure, "EXB9451", "EXB9460", "EXB9460S", "HPC-8000-65T", "HPC-8000H-65TM", "EXB-8000L-65TM" (manufactured by DIC Corporation); as an active ester-based curing agent containing a naphthalene structure, "EXB-9416-70BK", "EXB-8150-65T", "EXB-8100L-65T", "EXB-8150L-65T" (manufactured by DIC Corporation); as an active ester-based curing agent containing an acetylated product of phenol novolak, "DC808" (manufactured by Mitsubishi Chemical Corporation); as an active ester-based curing agent containing a benzoylated product of phenol novolak, "YLH1026" (manufactured by Mitsubishi Chemical Corporation); as an active ester-based curing agent which is an acetylated product of phenol novolak, "DC808" (manufactured by Mitsubishi Chemical Corporation); as an active ester-based curing agent which is a benzoylated product of phenol novolak, "YLH1026" (manufactured by Mitsubishi Chemical Corporation), "YLH1030" (manufactured by Mitsubishi Chemical Corporation), "YLH1048" (manufactured by Mitsubishi Chemical Corporation); and the like.

[0087] Examples of amine curing agents include curing agents having one or more amino groups in one molecule, such as aliphatic amines, polyether amines, alicyclic amines, aromatic amines, etc. Among them, aromatic amines are preferred. The amine curing agent is preferably a primary amine or a secondary amine, and more preferably a primary amine. Specific examples of the amine curing agent include 4,4'-methylenebis(2,6-dimethylaniline), diphenyldiaminosulfone, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, m-phenylenediamine, m-xylylenediamine, diethyltoluenediamine, 4,4'-diaminodiphenyl ether, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dihydroxybenzidine, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethanediamine, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-(4-aminophenoxy)phenyl)propane, 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 4,4'-bis(4-aminophenoxy)biphenyl, bis(4-(4-aminophenoxy)phenyl)sulfone, bis(4-(3-aminophenoxy)phenyl)sulfone, etc. The amine curing agent may be a commercially available product, for example, "KAYABOND C-200S", "KAYABOND C-100", "KAYAHARD A-A", "KAYAHARD A-B", "KAYAHARD A-S" manufactured by Nippon Kayaku Co., Ltd., "EPICURE W" manufactured by Mitsubishi Chemical Corporation, etc.

[0088] Examples of the acid anhydride-based curing agent include curing agents having one or more acid anhydride groups in one molecule. Specific examples of the acid anhydride-based curing agent include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyl nadic anhydride, hydrogenated methyl nadic anhydride, trialkyltetrahydrophthalic anhydride, dodecenyl succinic anhydride, 5-(2,5-dioxotetrahydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, biphenyltetracarboxylic dianhydride, naphthalene tetracarboxylic dianhydride, oxydiphthalic dianhydride, 3,3'-4,4'-diphenylsulfone tetracarboxylic dianhydride, 1,3,3a,4,5,9b-hexahydro-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]furan-1,3-dione, ethylene glycol bis(anhydrotrimellitate), and polymer-type acid anhydrides such as a styrene-maleic acid resin obtained by copolymerizing styrene and maleic acid. Commercially available products of the acid anhydride-based curing agent include, for example, "MH-700" manufactured by Shin Nippon Rika Co., Ltd.

[0089] Specific examples of the benzoxazine-based curing agent include "JBZ-OD100" (benzoxazine ring equivalent: 218 g / eq.), "JBZ-OP100D" (benzoxazine ring equivalent: 218 g / eq.), and "ODA-BOZ" (benzoxazine ring equivalent: 218 g / eq.) manufactured by JFE Chemical Corporation; "P-d" (benzoxazine ring equivalent: 217 g / eq.) and "F-a" (benzoxazine ring equivalent: 217 g / eq.) manufactured by Shikoku Kasei Kogyo Co., Ltd.; and "HFB2006M" (benzoxazine ring equivalent: 432 g / eq.) manufactured by Showa Highpolymer Co., Ltd.

[0090] Examples of cyanate ester-based curing agents include bifunctional cyanate resins such as bisphenol A dicyanate, polyphenol cyanate, oligo(3-methylene-1,5-phenylene cyanate), 4,4'-methylenebis(2,6-dimethylphenyl cyanate), 4,4'-ethylidenediphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-bis(4-cyanate)phenylpropane, 1,1-bis(4-cyanatephenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane, 1,3-bis(4-cyanatephenyl-1-(methylethylidene))benzene, bis(4-cyanatephenyl)thioether, and bis(4-cyanatephenyl)ether; polyfunctional cyanate resins derived from phenol novolac and cresol novolac; prepolymers in which part of these cyanate resins is triazine-ized; and the like. Specific examples of cyanate ester-based curing agents include "PT30" and "PT60" (phenol novolac type polyfunctional cyanate ester resins), "ULL-950S" (polyfunctional cyanate ester resin), "BA230", "BA230S75" (prepolymer in which part or all of bisphenol A dicyanate is triazine-ized to form a trimer), etc. manufactured by Lonza Japan Co., Ltd.

[0091] Specific examples of carbodiimide-based curing agents include Carbodilite (registered trademark) V-03 (carbodiimide group equivalent: 216 g / eq.), V-05 (carbodiimide group equivalent: 262 g / eq.), V-07 (carbodiimide group equivalent: 200 g / eq.); V-09 (carbodiimide group equivalent: 200 g / eq.) manufactured by Nisshinbo Chemical Inc.; and Stabaxol (registered trademark) P (carbodiimide group equivalent: 302 g / eq.) manufactured by Rhein Chemie.

[0092] Specific examples of thiol-based curing agents include trimethylolpropane tris(3-mercaptopropionate), pentaerythritol tetrakis(3-mercaptobutyrate), tris(3-mercaptopropyl) isocyanurate, and the like.

[0093] (D) The active group equivalent weight of the curing agent is preferably 50 g / eq. to 3000 g / eq., more preferably 100 g / eq. to 1000 g / eq., still more preferably 100 g / eq. to 500 g / eq., and particularly preferably 100 g / eq. to 300 g / eq. The active group equivalent weight is the mass of the curing agent per equivalent of the active group.

[0094] (A) When the number of epoxy groups of the epoxy resin is taken as 1, the number of active groups of the (D) curing agent is preferably 0.1 or more, more preferably 0.2 or more, still more preferably 0.3 or more, and preferably 5.0 or less, more preferably 2.0 or less, and particularly preferably 1.0 or less. The "number of epoxy groups of the (A) epoxy resin" represents the total value obtained by summing up the values obtained by dividing the mass of the non-volatile component of the (A) epoxy resin present in the resin composition by the epoxy equivalent weight. Also, the "number of active groups of the (D) curing agent" represents the total value obtained by summing up the values obtained by dividing the mass of the non-volatile component of the (D) curing agent present in the resin composition by the active group equivalent weight.

[0095] The amount of the (D) curing agent in the resin composition is preferably 1% by mass or more, more preferably 2% by mass or more, and particularly preferably 4% by mass or more, and preferably 30% by mass or less, more preferably 20% by mass or less, and particularly preferably 10% by mass or less with respect to 100% by mass of the non-volatile component of the resin composition.

[0096] The amount of the curing agent in the resin composition is preferably 5% by mass or more, more preferably 10% by mass or more, and particularly preferably 15% by mass or more, and preferably 50% by mass or less, more preferably 40% by mass or less, and particularly preferably 30% by mass or less with respect to 100% by mass of the resin component of the resin composition.

[0097] [6. (E) Curing accelerator] The resin composition according to this embodiment may further contain an (E) curing accelerator as an optional component in combination with the above-described (A) to (D) components. The (E) curing accelerator as this (E) component does not include those corresponding to the above-described (A) to (D) components. The (E) curing accelerator has a function as a curing catalyst that accelerates the curing of the (A) epoxy resin.

[0098] (E) As the curing accelerator, for example, phosphorus-based curing accelerators, urea-based curing accelerators, guanidine-based curing accelerators, imidazole-based curing accelerators, metal-based curing accelerators, amine-based curing accelerators, etc. can be mentioned. Among them, imidazole-based curing accelerators are preferred. (E) The curing accelerator may be used alone or in combination of two or more.

[0099] Examples of phosphorus-based curing accelerators include aliphatic phosphonium salts such as tetrabutylphosphonium bromide, tetrabutylphosphonium chloride, tetrabutylphosphonium acetate, tetrabutylphosphonium decanoate, tetrabutylphosphonium laurate, bis(tetrabutylphosphonium) pyromellitate, tetrabutylphosphonium hydrogen hexahydrophthalate, tetrabutylphosphonium 2,6-bis[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenolate, di-tert-butyldimethylphosphonium tetraphenylborate; aromatic phosphonium salts such as methyltriphenylphosphonium bromide, ethyltriphenylphosphonium bromide, propyltriphenylphosphonium bromide, butyltriphenylphosphonium bromide, benzyltriphenylphosphonium chloride, tetraphenylphosphonium bromide, p-tolyltriphenylphosphonium tetra-p-tolylborate, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra p-tolylborate, triphenylethylphosphonium tetraphenylborate, tris(3-methylphenyl)ethylphosphonium tetraphenylborate, tris(2-methoxyphenyl)ethylphosphonium tetraphenylborate, (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate; aromatic phosphine-borane complexes such as triphenylphosphine·triphenylborane; aromatic phosphine-quinone addition reactants such as triphenylphosphine·p-benzoquinone addition reactant; aliphatic phosphines such as tributylphosphine, tri-tert-butylphosphine, trioctylphosphine, di-tert-butyl(2-butenyl)phosphine, di-tert-butyl(3-methyl-2-butenyl)phosphine, tricyclohexylphosphine;Aromatic phosphines such as dibutylphenylphosphine, di-tert-butylphenylphosphine, methyldiphenylphosphine, ethyldiphenylphosphine, butyldiphenylphosphine, diphenylcyclohexylphosphine, triphenylphosphine, tri-o-tolylphosphine, tri-m-tolylphosphine, tri-p-tolylphosphine, tris(4-ethylphenyl)phosphine, tris(4-propylphenyl)phosphine, tris(4-isopropylphenyl)phosphine, tris(4-butylphenyl)phosphine, tris(4-tert-butylphenyl)phosphine, tris(2,4-dimethylphenyl)phosphine, tris(2,5-dimethylphenyl)phosphine, tris(2,6-dimethylphenyl)phosphine, tris(3,5-dimethylphenyl)phosphine, tris(2,4,6-trimethylphenyl)phosphine, tris(2,6-dimethyl-4-ethoxyphenyl)phosphine, tris(2-methoxyphenyl)phosphine, tris(4-methoxyphenyl)phosphine, tris(4-ethoxyphenyl)phosphine, tris(4-tert-butoxyphenyl)phosphine, diphenyl-2-pyridylphosphine, 1,2-bis(diphenylphosphino)ethane, 1,3-bis(diphenylphosphino)propane, 1,4-bis(diphenylphosphino)butane, 1,2-bis(diphenylphosphino)acetylene, 2,2'-bis(diphenylphosphino)diphenylether, etc. are mentioned.;

[0100] Examples of urea-based curing accelerators include, for example, 1,1-dimethylurea; aliphatic dimethylureas such as 1,1,3-trimethylurea, 3-ethyl-1,1-dimethylurea, 3-cyclohexyl-1,1-dimethylurea, 3-cyclooctyl-1,1-dimethylurea; aromatic dimethylureas such as 3-phenyl-1,1-dimethylurea, 3-(4-chlorophenyl)-1,1-dimethylurea, 3-(3,4-dichlorophenyl)-1,1-dimethylurea, 3-(3-chloro-4-methylphenyl)-1,1-dimethylurea, 3-(2-methylphenyl)-1,1-dimethylurea, 3-(4-methylphenyl)-1,1-dimethylurea, 3-(3,4-dimethylphenyl)-1,1-dimethylurea, 3-(4-isopropylphenyl)-1,1-dimethylurea, 3-(4-methoxyphenyl)-1,1-dimethylurea, 3-(4-nitrophenyl)-1,1-dimethylurea, 3-[4-(4-methoxyphenoxy)phenyl]-1,1-dimethylurea, 3-[4-(4-chlorophenoxy)phenyl]-1,1-dimethylurea, 3-[3-(trifluoromethyl)phenyl]-1,1-dimethylurea, N,N-(1,4-phenylene)bis(N’,N’-dimethylurea), N,N-(4-methyl-1,3-phenylene)bis(N’,N’-dimethylurea) [toluene bisdimethylurea], and the like.

[0101] Examples of guanidine-based curing accelerators include, for example, dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]dec-5-ene, 7-methyl-1,5,7-triazabicyclo[4.4.0]dec-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-dimethylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, 1-(o-tolyl)biguanide, and the like.

[0102] Examples of imidazole-based curing accelerators include imidazole compounds such as 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, 2-phenylimidazoline, and adducts of imidazole compounds and epoxy resins. Commercially available products of imidazole-based curing accelerators include, for example, "1B2PZ", "2E4MZ", "2MZA-PW", "2MZ-OK", "2MA-OK", "2MA-OK-PW", "2PHZ", "2PHZ-PW", "Cl1Z", "Cl1Z-CN", "Cl1Z-CNS", "C11Z-A" manufactured by Shikoku Kasei Kogyo Co., Ltd.; "P200-H50" manufactured by Mitsubishi Chemical Corporation, etc.

[0103] Examples of the metal-based hardening accelerators include organometallic complexes or organometallic salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of the organometallic complexes include organocobalt complexes such as cobalt(II) acetylacetonate and cobalt(III) acetylacetonate, organocopper complexes such as copper(II) acetylacetonate, organozinc complexes such as zinc(II) acetylacetonate, organoiron complexes such as iron(III) acetylacetonate, organonickel complexes such as nickel(II) acetylacetonate, and organomanganese complexes such as manganese(II) acetylacetonate. Examples of the organometallic salts include zinc octylate, tin octylate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate.

[0104] Examples of the amine-based hardening accelerators include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol, 1,8-diazabicyclo(5,4,0)undecene, etc. As the amine-based hardening accelerator, commercially available products may be used. For example, "MY-25" manufactured by Ajinomoto Fine-Techno Co., Inc. etc. may be mentioned.

[0105] The amount of the hardening accelerator (E) in the resin composition is preferably 0.01% by mass or more, more preferably 0.02% by mass or more, particularly preferably 0.03% by mass or more, and preferably 1.0% by mass or less, more preferably 0.5% by mass or less, particularly preferably 0.1% by mass or less, based on 100% by mass of the non-volatile components of the resin composition.

[0106] The amount of the hardening accelerator (E) in the resin composition is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, particularly preferably 0.10% by mass or more, and preferably 2.0% by mass or less, more preferably 1.0% by mass or less, particularly preferably 0.5% by mass or less, based on 100% by mass of the resin components of the resin composition.

[0107] [7. (F) Optional Additives] The resin composition according to this embodiment may further contain, as an optional non-volatile component in combination with the above-described components (A) to (E), (F) an optional additive. Examples of the (F) optional additive include organometallic compounds such as organic copper compounds, organic zinc compounds, and organic cobalt compounds; leveling agents such as silicone-based leveling agents and acrylic polymer-based leveling agents; thickeners such as bentonite and montmorillonite; defoaming agents such as silicone-based defoaming agents, acrylic-based defoaming agents, fluorine-based defoaming agents, and vinyl resin-based defoaming agents; ultraviolet absorbers such as benzotriazole-based ultraviolet absorbers; adhesion improvers such as urea silane; adhesion imparting agents such as triazole-based adhesion imparting agents, tetrazole-based adhesion imparting agents, and triazine-based adhesion imparting agents; antioxidants such as hindered phenol-based antioxidants; fluorescent brighteners such as stilbene derivatives; surfactants such as fluorine-based surfactants and silicone-based surfactants; flame retardants such as phosphorus-based flame retardants (e.g., phosphate ester compounds, phosphazene compounds, phosphinic acid compounds, red phosphorus), nitrogen-based flame retardants (e.g., melamine sulfate), halogen-based flame retardants, and inorganic flame retardants (e.g., antimony trioxide); dispersants such as phosphate ester-based dispersants, polyoxyalkylene-based dispersants, acetylene-based dispersants, silicone-based dispersants, anionic dispersants, and cationic dispersants; stabilizers such as borate-based stabilizers, titanate-based stabilizers, aluminate-based stabilizers, zirconate-based stabilizers, isocyanate-based stabilizers, carboxylic acid-based stabilizers, and carboxylic anhydride-based stabilizers. The (F) optional additive may be used alone or in combination of two or more.

[0108] [8. (G) Solvent] The resin composition according to this embodiment may further contain, as an optional volatile component, (G) a solvent in combination with the non-volatile components such as the above-described components (A) to (F). Usually, an organic solvent is used as the (G) solvent. Examples of the organic solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; ester solvents such as methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, isoamyl acetate, methyl propionate, ethyl propionate, and γ-butyrolactone; ether solvents such as tetrahydropyran, tetrahydrofuran, 1,4-dioxane, diethyl ether, diisopropyl ether, dibutyl ether, diphenyl ether, and anisole; alcohol solvents such as methanol, ethanol, propanol, butanol, and ethylene glycol; ether ester solvents such as 2-ethoxyethyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl diglycol acetate, γ-butyrolactone, and methyl methoxypropionate; ester alcohol solvents such as methyl lactate, ethyl lactate, and methyl 2-hydroxyisobutyrate; ether alcohol solvents such as 2-methoxypropanol, 2-methoxyethanol, 2-ethoxyethanol, propylene glycol monomethyl ether, and diethylene glycol monobutyl ether (butyl carbitol); amide solvents such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone; sulfoxide solvents such as dimethyl sulfoxide; nitrile solvents such as acetonitrile and propionitrile; aliphatic hydrocarbon solvents such as hexane, cyclopentane, cyclohexane, and methylcyclohexane; aromatic hydrocarbon solvents such as benzene, toluene, xylene, ethylbenzene, and trimethylbenzene. The (G) solvent may be used alone or in combination of two or more.

[0109] (G) The amount of the solvent is not particularly limited. When the total components in the resin composition are 100% by mass, for example, it can be 60% by mass or less, 40% by mass or less, 30% by mass or less, 20% by mass or less, 15% by mass or less, 10% by mass or less, etc., and it may even be 0% by mass.

[0110] [9. Method for manufacturing the resin composition] The resin composition according to this embodiment can be manufactured, for example, by mixing the above-described components. The above-described components may be mixed partially or entirely simultaneously, or may be mixed in sequence. During the process of mixing each component, the temperature may be appropriately set, and thus, heating and / or cooling may be performed temporarily or throughout. Also, during the process of mixing each component, stirring or shaking may be performed.

[0111] [10. Characteristics of the resin composition and its cured product] According to the resin composition of this embodiment, a cured product capable of suppressing warping can be obtained. Therefore, when a layer of the cured product of the resin composition (hereinafter sometimes referred to as the "cured product layer") is formed on a substrate such as a silicon wafer to obtain a laminate, the warpage amount of the laminate can be reduced. For example, when a laminate is manufactured by the method described in the [Warpage evaluation] section of the examples described later and its warpage amount is measured, the warpage amount can be made 1.5 mm or less.

[0112] According to the resin composition of this embodiment, a cured product excellent in adhesion to the conductor layer can be obtained. Therefore, when a cured product layer of the resin composition is formed so as to contact the conductor layer, peeling between the conductor layer and the cured product layer can be suppressed. For example, when the copper foil adhesion strength is measured by the method described in the [Evaluation of copper foil adhesion strength] section of the examples described later, a copper foil adhesion strength of preferably 0.53 kgf / cm or more, more preferably 0.57 kgf / cm or more, and particularly preferably 0.60 kgf / cm or more can be obtained.

[0113] According to the resin composition of this embodiment, a cured product excellent in adhesion to silicon can usually be obtained. Therefore, when a cured product layer of the resin composition is formed so as to contact a member formed of silicon, peeling between the member and the cured product layer can be suppressed. For example, when the Si adhesion strength is measured by the method described in the section [Evaluation of Si Adhesion Strength] of the examples described later, it is preferably 550 kgf / cm 2 or more, preferably 570 kgf / cm 2 or more, and particularly preferably 590 kgf / cm 2 or more of Si adhesion strength can be obtained.

[0114] According to the resin composition of this embodiment, a cured product having a low elastic modulus can usually be obtained. The inventor believes that the cured product having such a low elastic modulus is one of the reasons for obtaining the excellent adhesion and warpage suppression effects as described above. For example, when the tensile elastic modulus of the cured product of the resin composition is measured by the method described in the section [Measurement of Elastic Modulus] of the examples described later, a tensile elastic modulus of preferably 16 GPa or less, more preferably 15 GPa or less, and particularly preferably 14.5 GPa or less can be obtained. The lower limit is not particularly limited, but can be, for example, 5 GPa or more.

[0115] According to the resin composition of this embodiment, it can usually have a low minimum melt viscosity. Therefore, when sealing is performed with the resin composition, formation of a gap unfilled with the resin composition can be suppressed. For example, when the minimum melt viscosity of the resin composition is measured by the method described in the section [Measurement of Melt Viscosity] of the examples described later, a minimum melt viscosity of preferably 9000 poise or less, more preferably 8000 poise or less, and particularly preferably 7500 poise or less can be obtained. The lower limit value is not particularly limited, but is preferably 500 poise or more, more preferably 1000 poise or more, and particularly preferably 2000 poise or more.

[0116] Since the resin composition has the above-described characteristics, it can be suitably used as a resin composition for a sealing layer, and in particular, as a resin composition for sealing a semiconductor (resin composition for semiconductor encapsulation), preferably as a resin composition for sealing a semiconductor chip (resin composition for semiconductor chip encapsulation). Further, the resin composition may be used as a resin composition for an insulating layer in addition to the sealing application. For example, the above resin composition can be suitably used as a resin composition for forming an insulating layer of a semiconductor chip package (resin composition for insulating layer of semiconductor chip package) and a resin composition for forming an insulating layer of a circuit board (including a printed wiring board) (resin composition for insulating layer of circuit board).

[0117] Examples of the semiconductor chip package include FC-CSP, MIS-BGA package, ETS-BGA package, Fan-out type WLP (Wafer Level Package), Fan-in type WLP, Fan-out type PLP (Panel Level Package), and Fan-in type PLP.

[0118] Further, the above resin composition may be used as an underfill material, for example, as a material for MUF (Molding Under Filling) used after connecting a semiconductor chip to a substrate.

[0119] Furthermore, the above resin composition can be used in a wide range of applications where resin compositions are used, such as resin sheets, sheet-like laminated materials such as prepregs, solder resists, die bonding materials, hole filling resins, component embedding resins, and the like.

[0120] [11. Resin Sheet] The resin sheet according to an embodiment of the present invention has a support and a resin composition layer formed on the support. Since the resin composition layer is a layer formed of the resin composition, it usually contains the above-described resin composition and preferably contains only the above-described resin composition.

[0121] From the perspective of thinning, the thickness of the resin composition layer is preferably 600 μm or less, more preferably 550 μm or less, still more preferably 500 μm or less, 400 μm or less, 350 μm or less, 300 μm or less, or 200 μm or less. The lower limit of the thickness of the resin composition layer is not particularly limited and can be, for example, 1 μm or more, 5 μm or more, 10 μm or more, etc.

[0122] Examples of the support include a film made of a plastic material, a metal foil, and a release paper, and a film made of a plastic material and a metal foil are preferred.

[0123] When using a film made of a plastic material as the support, examples of the plastic material include polyesters such as polyethylene terephthalate (hereinafter may be abbreviated as "PET"), polyethylene naphthalate (hereinafter may be abbreviated as "PEN"); polycarbonate (hereinafter may be abbreviated as "PC"); acrylic polymers such as polymethyl methacrylate (hereinafter may be abbreviated as "PMMA"); cyclic polyolefin; triacetyl cellulose (hereinafter may be abbreviated as "TAC"); polyethersulfide (hereinafter may be abbreviated as "PES"); polyether ketone; polyimide; etc. Among them, polyethylene terephthalate and polyethylene naphthalate are preferred, and inexpensive polyethylene terephthalate is particularly preferred.

[0124] When using a metal foil as the support, examples of the metal foil include a copper foil, an aluminum foil, etc. Among them, a copper foil is preferred. As the copper foil, a foil made of single metal copper may be used, or a foil made of an alloy of copper and other metals (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) may be used.

[0125] The support may be subjected to treatments such as a mat treatment, a corona treatment, an antistatic treatment, etc. on the surface that joins the resin composition layer.

[0126] Also, as the support, a support with a release layer having a release layer on the surface that bonds to the resin composition layer may be used. Examples of the release agent used for the release layer of the support with a release layer include one or more release agents selected from the group consisting of alkyd resins, polyolefin resins, urethane resins, and silicone resins. Examples of commercially available release agents include "SK-1", "AL-5", "AL-7", etc. manufactured by Lintec Corporation, which are alkyd resin-based release agents. Examples of supports with a release layer include "Lumirror T60" manufactured by Toray Industries, Inc.; "Purex" manufactured by Teijin Limited; "Unipile" manufactured by Unitika Ltd.; and the like.

[0127] The thickness of the support is preferably in the range of 5 μm to 75 μm, more preferably in the range of 10 μm to 60 μm. When using a support with a release layer, it is preferable that the total thickness of the support with a release layer is within the above range.

[0128] The resin sheet can be produced, for example, by applying a resin composition onto a support using a coating device such as a die coater. Alternatively, if necessary, the resin composition may be dissolved in a solvent to prepare a resin varnish, and this resin varnish may be applied to produce a resin sheet. By using a solvent, the viscosity can be adjusted to improve the coatability. When using a resin varnish, usually, the resin varnish is dried after application to form a resin composition layer.

[0129] As the solvent, for example, those described as solvents that the resin composition may contain can be used. The solvent may be used alone or in combination of two or more in any ratio.

[0130] Drying may be carried out by known methods such as heating and hot air blowing. The drying conditions are such that the solvent content in the resin composition layer is usually 10% by mass or less, preferably 5% by mass or less. Although it varies depending on the boiling point of the solvent, for example, when using a resin varnish containing 30% to 60% by mass of an organic solvent, the resin composition layer can be formed by drying at 50°C to 150°C for 3 to 10 minutes.

[0131] The resin sheet may contain any layer other than the support and the resin composition layer as required. For example, in the resin sheet, a protective film similar to the support may be provided on the surface of the resin composition layer that is not joined to the support (i.e., the surface opposite to the support). The thickness of the protective film is, for example, 1 μm to 40 μm. The protective film can prevent the adhesion of dust and the like and scratches on the surface of the resin composition layer. When the resin sheet has a protective film, the resin sheet can be used by peeling off the protective film. Further, the resin sheet can be wound and stored in a roll shape.

[0132] The resin sheet can be suitably used for sealing a semiconductor chip (resin sheet for semiconductor chip sealing). Examples of applicable semiconductor chip packages include Fan-out type WLP, Fan-in type WLP, Fan-out type PLP, Fan-in type PLP, etc. Further, the resin sheet can be used, for example, for sealing a circuit board (resin sheet for circuit board sealing).

[0133] Also, the resin sheet can be suitably used for forming an insulating layer in the manufacture of a semiconductor chip package (resin sheet for insulating a semiconductor chip package). For example, the resin sheet can be used for forming an insulating layer of a circuit board (resin sheet for insulating layer of a circuit board). Examples of packages using such a substrate include FC-CSP, MIS-BGA package, and ETS-BGA package.

[0134] Furthermore, the resin sheet may be used as a material for MUF used after connecting a semiconductor chip to a substrate.

[0135] Also, the resin sheet can be used in other wide-ranging applications that require high insulation reliability. For example, the resin sheet can be suitably used for forming an insulating layer of a circuit board such as a printed wiring board.

[0136] [12. Circuit board] A circuit board according to an embodiment of the present invention includes a cured product of a resin composition. Usually, the circuit board includes a cured product layer formed of the cured product of the resin composition. This cured product layer can usually function as an insulating layer or a sealing layer, and preferably functions as a sealing layer. This circuit board can be manufactured, for example, by a manufacturing method including the following steps (1) and (2). (1) A step of forming a resin composition layer on a base material. (2) A step of curing the resin composition layer to form a cured product layer.

[0137] In step (1), a base material is prepared. Examples of the base material include substrates such as glass epoxy substrates, metal substrates (such as stainless steel and cold-rolled steel sheets (SPCC)), polyester substrates, polyimide substrates, BT resin substrates, and thermosetting polyphenylene ether substrates. Further, the base material may have a metal layer such as a copper foil on its surface as a part of the base material. For example, a base material having a peelable first metal layer and second metal layer on both surfaces may be used. When such a base material is used, usually, a conductor layer as a wiring layer that can function as circuit wiring is formed on the surface of the second metal layer opposite to the first metal layer. Examples of the material of the metal layer include copper foil, copper foil with a carrier, and the material of the conductor layer described later, and copper foil is preferred. Examples of the base material having a metal layer include the ultra-thin copper foil "Micro Thin" with a carrier copper foil manufactured by Mitsui Mining & Smelting Co., Ltd.

[0138] Also, a conductor layer may be formed on one or both surfaces of the base material. In the following description, a member including the base material and the conductor layer formed on the surface of the base material may be appropriately referred to as a "base material with wiring layer". Examples of the conductor material included in the conductor layer include materials containing one or more metals selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium. As the conductor material, a single metal may be used, or an alloy may be used. Examples of the alloy include alloys of two or more metals selected from the above group (for example, nickel-chromium alloy, copper-nickel alloy, and copper-titanium alloy). Among them, from the viewpoints of versatility, cost, and ease of patterning in forming the conductor layer, chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper as a single metal; and nickel-chromium alloy, copper-nickel alloy, and copper-titanium alloy as alloys; are preferable. Among them, a single metal of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper; and nickel-chromium alloy; are more preferable, and a single metal of copper is particularly preferable.

[0139] The conductor layer may be pattern-processed, for example, to function as a wiring layer. At this time, the line (circuit width) / space (width between circuits) ratio of the conductor layer is not particularly limited, but is preferably 20 / 20 μm or less (that is, the pitch is 40 μm or less), more preferably 10 / 10 μm or less, still more preferably 5 / 5 μm or less, even more preferably 1 / 1 μm or less, and particularly preferably 0.5 / 0.5 μm or more. The pitch may be uniform or non-uniform over the entire conductor layer. The minimum pitch of the conductor layer may be, for example, 40 μm or less, 36 μm or less, or 30 μm or less.

[0140] The thickness of the conductor layer depends on the design of the circuit board, but is preferably 3 μm to 35 μm, more preferably 5 μm to 30 μm, still more preferably 10 μm to 20 μm, and particularly preferably 15 μm to 20 μm.

[0141] After preparing the base material, a resin composition layer is formed on the base material. When a conductor layer is formed on the surface of the base material, it is preferable to form the resin composition layer such that the conductor layer is embedded in the resin composition layer.

[0142] The formation of the resin composition layer is performed, for example, by laminating a resin sheet and the base material. This lamination can be carried out, for example, by heat-pressing the resin sheet onto the base material from the support side to bond the resin composition layer to the base material. Examples of the member for heat-pressing the resin sheet onto the base material (hereinafter sometimes referred to as "heat-pressing member") include a heated metal plate (such as a SUS mirror plate) or a metal roll (such as a SUS roll). Note that it is preferable to press through an elastic material such as heat-resistant rubber so that the resin sheet sufficiently follows the surface unevenness of the base material rather than pressing the heat-pressing member directly against the resin sheet.

[0143] The lamination of the base material and the resin sheet may be carried out, for example, by the vacuum lamination method. The lamination conditions can be, for example, as follows. The heat-pressing temperature is preferably in the range of 60°C to 160°C, more preferably in the range of 80°C to 140°C. The heat-pressing pressure is preferably in the range of 0.098 MPa to 1.77 MPa, more preferably in the range of 0.29 MPa to 1.47 MPa. The heat-pressing time is preferably in the range of 20 seconds to 400 seconds, more preferably in the range of 30 seconds to 300 seconds. The lamination is preferably carried out under reduced pressure conditions of a pressure of 13 hPa or less.

[0144] After the lamination, under normal pressure (atmospheric pressure), for example, the smoothing treatment of the laminated resin sheet may be performed by pressing the heat-pressing member from the support side. The pressing conditions for the smoothing treatment can be the same as the heat-pressing conditions for the above lamination. Note that the lamination and the smoothing treatment may be continuously carried out using a vacuum laminator.

[0145] After forming a resin composition layer on a substrate, the resin composition layer is thermally cured to form a cured product layer. The thermal curing conditions of the resin composition layer may vary depending on the type of the resin composition. However, the curing temperature is usually in the range of 120°C to 240°C (preferably in the range of 150°C to 220°C, more preferably in the range of 170°C to 200°C), and the curing time is in the range of 5 minutes to 120 minutes (preferably in the range of 10 minutes to 100 minutes, more preferably in the range of 15 minutes to 90 minutes).

[0146] Before thermally curing the resin composition layer, a preheating treatment of heating the resin composition layer at a temperature lower than the curing temperature may be performed. For example, prior to thermally curing the resin composition layer, the resin composition layer is usually preheated at a temperature of 50°C or higher and lower than 120°C (preferably 60°C or higher and 110°C or lower, more preferably 70°C or higher and 100°C or lower) for usually 5 minutes or longer (preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes).

[0147] As described above, a circuit board having a cured product layer formed of a cured product of the resin composition can be manufactured. Further, the method for manufacturing the circuit board may further include any process. For example, when manufacturing a circuit board using a resin sheet, the method for manufacturing the circuit board may include a step of peeling the support of the resin sheet. The support may be peeled before the thermal curing of the resin composition layer or after the thermal curing of the resin composition layer.

[0148] The method for manufacturing the circuit board may include, for example, a step of polishing the surface of the cured product layer after forming the cured product layer. The polishing method is not particularly limited. Examples of the polishing method include a chemical mechanical polishing method using a chemical mechanical polishing apparatus, a mechanical polishing method using a buff or the like, a surface grinding method by rotating a grinding wheel, and the like.

[0149] The method for manufacturing a circuit board may include, for example, a step (3) of interlayer connection of conductor layers. Examples of the interlayer connection method include, for example, a method of drilling holes in the cured material layer. By drilling, holes such as via holes and through holes can be formed in the cured material layer. Examples of the method for forming via holes include, for example, laser irradiation, etching, mechanical drilling, etc. The dimensions and shape of the via holes may be appropriately determined according to the design of the circuit board. Note that in step (3), interlayer connection may be performed by polishing or grinding the cured material layer.

[0150] After the formation of the via holes, it is preferable to perform a step of removing smears in the via holes. This step is sometimes called a desmear step. For example, when forming a conductor layer on the cured material layer by an electroplating process, a wet desmear treatment may be performed on the via holes. Also, when forming a conductor layer on the cured material layer by a sputtering process, a dry desmear step such as a plasma treatment step may be performed. Furthermore, the cured material layer may be subjected to a roughening treatment by the desmear step.

[0151] Also, before forming a conductor layer on the cured material layer, a roughening treatment may be performed on the cured material layer. According to this roughening treatment, usually, the surface of the cured material layer including the inside of the via holes is roughened. As the roughening treatment, either dry or wet roughening treatment may be performed. Examples of the dry roughening treatment include plasma treatment, etc. Also, examples of the wet roughening treatment include a swelling treatment with a swelling liquid, a roughening treatment with an oxidizing agent, and a method of performing a neutralization treatment with a neutralizing liquid in this order.

[0152] After forming the via holes, a conductor layer may be formed on the cured material layer. By forming a conductor layer at the position where the via holes are formed, the newly formed conductor layer and the conductor layer on the substrate surface are electrically connected to perform an interlayer connection. Examples of the method for forming the conductor layer include a plating method, a sputtering method, a vapor deposition method, and the like. For example, the surface of the cured material layer may be plated by an appropriate method such as a semi-additive method or a full-additive method to form a conductor layer having a desired wiring pattern. Further, for example, when the support in the resin sheet is a metal foil, a conductor layer having a desired wiring pattern may be formed by a subtractive method. The material of the conductor layer to be formed may be a single metal or an alloy. Further, this conductor layer may have a single-layer structure or may have a multilayer structure including two or more layers of different types of materials.

[0153] Here, an example of an embodiment of forming a conductor layer on the cured material layer will be described in detail. A plating seed layer is formed on the surface of the cured material layer by electroless plating. Next, a mask pattern for exposing a part of the plating seed layer corresponding to a desired wiring pattern is formed on the formed plating seed layer. After forming an electrolytic plating layer by electrolytic plating on the exposed plating seed layer, the mask pattern is removed. Then, an unnecessary plating seed layer is removed by a process such as etching to form a conductor layer having a desired wiring pattern.

[0154] The method for manufacturing a circuit board may include a step (4) of removing the substrate. By removing the substrate, a circuit board having a cured material layer and a conductor layer embedded in the cured material layer can be obtained. This step (4) can be performed, for example, when using a substrate having a peelable metal layer.

[0155] [13. Semiconductor Chip Package] A semiconductor chip package according to an embodiment of the present invention includes a cured product of a resin composition. Examples of this semiconductor chip package include the following.

[0156] The semiconductor chip package according to the first example includes the circuit board described above and a semiconductor chip mounted on this circuit board. This semiconductor chip package can be manufactured by bonding the semiconductor chip to the circuit board.

[0157] As the bonding conditions between the circuit board and the semiconductor chip, any conditions under which the terminal electrodes of the semiconductor chip and the circuit wiring of the circuit board can be conductively connected can be adopted. For example, the conditions used in the flip-chip mounting of the semiconductor chip can be adopted. Also, for example, the semiconductor chip and the circuit board may be bonded via an insulating adhesive.

[0158] As an example of the bonding method, a method of pressing the semiconductor chip onto the circuit board can be mentioned. As the pressing conditions, the pressing temperature is usually in the range of 120°C to 240°C (preferably in the range of 130°C to 200°C, more preferably in the range of 140°C to 180°C), and the pressing time is usually in the range of 1 second to 60 seconds (preferably in the range of 5 seconds to 30 seconds).

[0159] Also, as another example of the bonding method, a method of reflowing and bonding the semiconductor chip to the circuit board can be mentioned. The reflow conditions may be in the range of 120°C to 300°C.

[0160] After bonding the semiconductor chip to the circuit board, the semiconductor chip may be filled with a mold underfill material. As this mold underfill material, it is preferable to use the resin composition according to the above-described embodiment.

[0161] The semiconductor chip package according to the second example includes a semiconductor chip and a cured product of a resin composition that seals this semiconductor chip. In such a semiconductor chip package, usually, the cured product of the resin composition functions as a sealing layer. Examples of the semiconductor chip package according to the second example include, for example, Fan-out type WLP, Fan-out type PLP, etc.

[0162] FIG. 1 is a cross-sectional view schematically showing a Fan-out type WLP as an example of a semiconductor chip package according to an embodiment of the present invention. The semiconductor chip package 100 as a Fan-out type WLP includes, for example, as shown in FIG. 1, a semiconductor chip 110; a sealing layer 120 formed to cover the periphery of the semiconductor chip 110; a rewiring formation layer 130 as an insulating layer provided on a surface of the semiconductor chip 110 opposite to the sealing layer 120; a rewiring layer 140 as a conductor layer; a solder resist layer 150; and bumps 160.

[0163] A method for manufacturing such a semiconductor chip package is (A) a step of laminating a temporary fixing film on a base material, (B) a step of temporarily fixing a semiconductor chip on the temporary fixing film, (C) a step of forming a sealing layer on the semiconductor chip, (D) a step of peeling the base material and the temporary fixing film from the semiconductor chip, (E) a step of forming a rewiring formation layer on a surface of the semiconductor chip from which the base material and the temporary fixing film have been peeled, (F) a step of forming a rewiring layer as a conductor layer on the rewiring formation layer, and (G) a step of forming a solder resist layer on the rewiring layer, and includes. Further, the method for manufacturing the semiconductor chip package is (H) a step of dicing and singulating a plurality of semiconductor chip packages into individual semiconductor chip packages may also be included.

[0164] (Step (A)) Step (A) is a step of laminating a temporary fixing film on a base material. The lamination conditions of the base material and the temporary fixing film may be the same as the lamination conditions of the base material and the resin sheet in the manufacturing method of the circuit board.

[0165] Examples of the base material include silicon wafers; glass wafers; glass substrates; metal substrates such as copper, titanium, stainless steel, cold-rolled steel sheets (SPCC), etc.; substrates obtained by impregnating glass fibers with epoxy resins or the like and subjecting them to heat curing treatment, such as FR-4 substrates; substrates made of bismaleimide triazine resins such as BT resins; and the like.

[0166] The temporary fixing film can be peeled off from the semiconductor chip and can be made of any material that can temporarily fix the semiconductor chip. Examples of commercially available products include "Reveal Alpha" manufactured by Nitto Denko Corporation.

[0167] (Step (B)) Step (B) is a step of temporarily fixing the semiconductor chip on the temporary fixing film. The temporary fixing of the semiconductor chip can be performed, for example, using a device such as a flip chip bonder or a die bonder. The layout and the number of arrangements of the semiconductor chips can be appropriately set according to the shape and size of the temporary fixing film, the production number of the target semiconductor chip package, etc. For example, the semiconductor chips may be aligned and temporarily fixed in a matrix pattern of multiple rows and multiple columns.

[0168] (Step (C)) Step (C) is a step of forming a sealing layer on the semiconductor chip. The sealing layer can be formed by a cured product of the resin composition according to the above-described embodiment. The sealing layer is usually formed by a method including a step of forming a resin composition layer on the semiconductor chip and a step of thermally curing this resin composition layer to form a cured product layer as the sealing layer. The formation of the resin composition layer on the semiconductor chip can be performed in the same manner as the method of forming the resin composition layer on the base material described in the manufacturing method of the circuit board above, except that the semiconductor chip is used instead of the base material.

[0169] After forming a resin composition layer on the semiconductor chip, the resin composition layer is thermally cured to obtain a sealing layer covering the semiconductor chip. Thereby, the semiconductor chip is sealed with the cured product of the resin composition. The thermal curing conditions of the resin composition layer may adopt the same conditions as the thermal curing conditions of the resin composition layer in the manufacturing method of the circuit board. Further, before thermally curing the resin composition layer, a preheating treatment of heating the resin composition layer at a temperature lower than the curing temperature may be performed. The treatment conditions of this preheating treatment may adopt the same conditions as the preheating treatment in the manufacturing method of the circuit board.

[0170] (Step (D)) Step (D) is a step of peeling the base material and the temporary fixing film from the semiconductor chip. It is desirable to adopt an appropriate method according to the material of the temporary fixing film for the peeling method. Examples of the peeling method include a method of peeling by heating, foaming, or expanding the temporary fixing film. Further, examples of the peeling method include a method of irradiating ultraviolet rays to the temporary fixing film through the base material to reduce the adhesive force of the temporary fixing film and then peeling it.

[0171] In the method of peeling by heating, foaming, or expanding the temporary fixing film, the heating conditions are usually 100°C to 250°C for 1 second to 90 seconds or 5 minutes to 15 minutes. Also, in the method of irradiating ultraviolet rays to reduce the adhesive force of the temporary fixing film and then peeling it, the irradiation amount of ultraviolet rays is usually 10 mJ / cm 2 ~1000 mJ / cm 2 is.

[0172] As described above, when the base material and the temporary fixing film are peeled from the semiconductor chip, the surface of the sealing layer is exposed. The manufacturing method of the semiconductor chip package may include polishing the exposed surface of the sealing layer. By polishing, the smoothness of the surface of the sealing layer can be improved. As the polishing method, the same method as described in the manufacturing method of the circuit board can be used.

[0173] (Step (E)) Step (E) is a step of forming a redistribution formation layer as an insulating layer on the substrate of the semiconductor chip and the surface from which the temporary fixing film has been peeled off. Usually, this redistribution formation layer is formed on the semiconductor chip and the encapsulation layer. The redistribution formation layer can be formed, for example, by a photosensitive resin composition or a thermosetting resin composition. Also, after forming the redistribution formation layer, in order to connect the semiconductor chip and the redistribution layer in an interlayer manner, via holes are usually formed in the redistribution formation layer.

[0174] (Step (F)) Step (F) is a step of forming a redistribution layer as a conductor layer on the redistribution formation layer. The method of forming the redistribution layer on the redistribution formation layer can be the same as the method of forming the conductor layer on the cured product layer in the manufacturing method of the circuit board. Also, steps (E) and (F) may be repeated to stack the redistribution layer and the redistribution formation layer alternately (build up).

[0175] (Step (G)) Step (G) is a step of forming a solder resist layer on the redistribution layer. As the material of the solder resist layer, any insulating material can be used. Among them, from the viewpoint of ease of manufacturing the semiconductor chip package, a photosensitive resin composition and a thermosetting resin composition are preferable.

[0176] Also, in step (G), if necessary, bumping processing for forming bumps may be performed. The bumping processing can be performed by methods such as solder balls and solder plating. Also, the formation of via holes in the bumping processing can be performed in the same manner as in step (E).

[0177] (Step (H)) The manufacturing method of the semiconductor chip package may include step (H) in addition to steps (A) to (G). Step (H) is a step of dicing a plurality of semiconductor chip packages into individual semiconductor chip packages and separating them into individual pieces. The method of dicing the semiconductor chip package into individual semiconductor chip packages is not particularly limited.

[0178] As a semiconductor chip package according to the third example, there is a semiconductor chip package 100 shown in FIG. 1 as an example, in which the redistribution formation layer 130 or the solder resist layer 150 is formed of a cured product of the resin composition according to the above-described embodiment.

[0179] [14. Semiconductor Device] A semiconductor device according to an embodiment of the present invention includes the above-described circuit board or semiconductor chip package. Examples of the semiconductor device include various semiconductor devices used in electric products (for example, computers, mobile phones, smartphones, tablet devices, wearable devices, digital cameras, medical devices, and televisions, etc.) and vehicles (for example, motorcycles, automobiles, trains, ships, and airplanes, etc.).

Example

[0180] Hereinafter, the present invention will be specifically described with reference to examples. However, the present invention is not limited to the examples shown below. In the following description, "parts" and "%" representing amounts mean "parts by mass" and "mass%", respectively, unless otherwise specified. Further, the temperature conditions and pressure conditions in the case of no particular designation were room temperature (25°C) and atmospheric pressure (1 atm).

[0181] [Description of Inorganic Filler] The inorganic fillers used in the following examples and comparative examples are as follows. Inorganic filler 1: Spherical silica particles (average particle diameter 1 μm, specific surface area 4.5 m 2 / g) surface-treated with an aminosilane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.). Inorganic filler 2: Spherical alumina particles (average particle diameter 1.5 μm, specific surface area 1.6 m 2 / g) surface-treated with an aminosilane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.).

[0182] [Production Example 1. Production of Elastomer 1] In a reaction vessel, 69 g of bifunctional hydroxyl-terminated polybutadiene (number average molecular weight = 5047 (GPC method), hydroxyl group equivalent = 1800 g / eq., solid content 100% by mass, "G-3000" manufactured by Nippon Soda Co., Ltd.), 40 g of an aromatic hydrocarbon-based mixed solvent ("Ipzol 150" manufactured by Idemitsu Petrochemical Co., Ltd.), and 0.005 g of dibutyltin laurate were mixed and uniformly dissolved. When it became uniform, the temperature was raised to 50 °C, and while further stirring, 8 g of isophorone diisocyanate (manufactured by Evonik Degussa Japan Co., Ltd., IPDI, isocyanate group equivalent = 113 g / eq) was added, and the reaction was carried out for about 3 hours. Next, after cooling this reaction product to room temperature, 23 g of cresol novolak resin ("KA-1160" manufactured by DIC Corporation, hydroxyl group equivalent = 117 g / eq.) and 60 g of ethyl diglycol acetate (manufactured by Daicel Corporation) were added thereto, and the temperature was raised to 80 °C while stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at 2250 cm -1 was confirmed by FT-IR. The disappearance of the NCO peak was regarded as the end point of the reaction, and after cooling the reaction product to room temperature, it was filtered through a 100-mesh filter cloth to obtain Elastomer 1 having a polybutadiene structure and phenolic hydroxyl groups (non-volatile content 50% by mass). The number average molecular weight was 5500.

[0183] [Production Example 2. Production of Elastomer 2] In a reaction vessel, 50 g of a bifunctional hydroxyl-terminated polybutadiene (number average molecular weight = 5047 (GPC method), hydroxyl group equivalent = 1800 g / eq., solid content 100% by mass: "G-3000" manufactured by Nippon Soda Co., Ltd.), 23.5 g of an aromatic hydrocarbon-based mixed solvent ("Ipzol 150" manufactured by Idemitsu Petrochemical Co., Ltd.), and 0.005 g of dibutyltin laurate were mixed and uniformly dissolved. When it became uniform, the temperature was raised to 50 °C, and while further stirring, 4.8 g of toluene-2,4-diisocyanate (isocyanate group equivalent = 87.08 g / eq.) was added, and the reaction was carried out for about 3 hours. Next, after cooling this reaction product to room temperature, 8.96 g of benzophenone tetracarboxylic dianhydride (acid anhydride equivalent = 161.1 g / eq.), 0.07 g of triethylenediamine, and 40.4 g of ethyl diglycol acetate (manufactured by Daicel Corporation) were added thereto, and the temperature was raised to 130 °C while stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at 2250 cm -1 was confirmed by FT-IR. The disappearance of the NCO peak was regarded as the end point of the reaction, and after cooling the reaction product to room temperature, it was filtered through a 100-mesh filter cloth to obtain an elastomer 2 having an imide structure, a urethane structure, and a polybutadiene structure (non-volatile content 50% by mass). The number average molecular weight was 13700.

[0184] [Production Example 3. Production of Elastomer 3] In a reaction vessel, 80 g of polycarbonate diol (number average molecular weight: about 1,000, hydroxyl equivalent weight: 500 g / eq., non-volatile content: 100%, "C-1015N" manufactured by Kuraray Co., Ltd.) and 0.01 g of dibutyltin dilaurate were uniformly dissolved in 37.6 g of diethylene glycol monoethyl ether acetate ("Ethyl diglycol acetate" manufactured by Daicel Corporation). Next, the mixture was heated to 50°C, and while further stirring, 27.8 g of toluene-2,4-diisocyanate (isocyanate group equivalent weight: 87.08) was added, and the reaction was carried out for about 3 hours. After cooling this reaction product to room temperature, 14.3 g of benzophenone tetracarboxylic dianhydride (acid anhydride equivalent weight: 161.1 g / eq.), 0.12 g of triethylenediamine, and 84.0 g of diethylene glycol monoethyl ether acetate ("Ethyl diglycol acetate" manufactured by Daicel Corporation) were added thereto, and while stirring, the temperature was raised to 130°C, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at 2250 cm -1 was confirmed by FT-IR. The disappearance of the NCO peak was regarded as the end point of the reaction. After cooling the reaction product to room temperature, it was filtered through a 100-mesh filter cloth to obtain an elastomer 3 having an imide structure, a urethane structure, and a polycarbonate structure (non-volatile content 50% by mass). The number average molecular weight was 8500.

[0185] [Example 1] 2 parts of a liquid chelate-type epoxy resin ("EP-49-10P" manufactured by ADEKA, epoxy equivalent 240 g / eq., chelate modification amount (phosphoric acid modification amount) 1.0 mass%), 4 parts of a liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., a 1:1 mixture (mass ratio) of bisphenol A-type epoxy resin and bisphenol F-type epoxy resin, epoxy equivalent: 169 g / eq.), and 3 parts of a bixylenol-type epoxy resin ("YX4000H" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 185 g / eq.) were dissolved by heating with stirring in 10 parts of MEK. After cooling to room temperature, 16 parts of elastomer 1 (non-volatile content 50 mass%), 10 parts of a phenolic curing agent having a triazine skeleton and a novolak structure ("LA-3018-50P" manufactured by DIC, active group equivalent about 151 g / eq., 2-methoxypropanol solution with a solid content of 50%), 1 part of an imidazole-based curing accelerator ("1B2PZ" manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-benzyl-2-phenylimidazole, MEK solution with a solid content of 5 mass%), 75 parts of inorganic filler 1, and 10 parts of MEK were mixed and uniformly dispersed with a high-speed rotary mixer, and then filtered through a cartridge filter ("SHP020" manufactured by ROKITECHNO) to produce a resin varnish.

[0186] [Example 2] The amount of the chelate-type epoxy resin ("EP-49-10P" manufactured by ADEKA, epoxy equivalent 240 g / eq.) was changed to 1.5 parts, and the amount of elastomer 1 (non-volatile content 50 mass%) was changed to 18 parts. A resin varnish was produced in the same manner as in Example 1 except for the above matters.

[0187] [Example 3] The amount of the chelate-type epoxy resin ("EP-49-10P" manufactured by ADEKA, epoxy equivalent 240 g / eq.) was changed to 0.7 parts, and the amount of elastomer 1 (non-volatile content 50 mass%) was changed to 19 parts. A resin varnish was produced in the same manner as in Example 1 except for the above matters.

[0188] [Example 4] The amount of the chelate-type epoxy resin ("EP-49-10P" manufactured by ADEKA, epoxy equivalent 240 g / eq.) was changed to 3 parts, and the amount of elastomer 1 (non-volatile content 50% by mass) was changed to 14 parts. A resin varnish was produced in the same manner as in Example 1 except for the above matters.

[0189] [Example 5] The amount of the chelate-type epoxy resin ("EP-49-10P" manufactured by ADEKA, epoxy equivalent 240 g / eq.) was changed to 4 parts, and the amount of elastomer 1 (non-volatile content 50% by mass) was changed to 12 parts. A resin varnish was produced in the same manner as in Example 1 except for the above matters.

[0190] [Example 6] The chelate-type epoxy resin ("EP-49-10P" manufactured by ADEKA, epoxy equivalent 240 g / eq.) was changed to a liquid chelate-modified epoxy resin ("EP-49-10P2" manufactured by ADEKA, epoxy equivalent 300 g / eq., chelate modification amount (phosphoric acid modification amount) 1.5% by mass). A resin varnish was produced in the same manner as in Example 1 except for the above matters.

[0191] [Example 7] The chelate-type epoxy resin ("EP-49-10P" manufactured by ADEKA, epoxy equivalent 240 g / eq.) was changed to a liquid chelate-type epoxy resin ("EP-49-23" manufactured by ADEKA, epoxy equivalent 175 g / eq.). A resin varnish was produced in the same manner as in Example 1 except for the above matters.

[0192] [Example 8] A resin varnish was produced in the same manner as in Example 1 except that 75 parts of inorganic filler 2 was used instead of 75 parts of inorganic filler 1.

[0193] [Example 9] A resin varnish was produced in the same manner as in Example 1 except that 16 parts of elastomer 2 (non-volatile content 50% by mass) was used instead of 16 parts of elastomer 1 (non-volatile content 50% by mass).

[0194] [Example 10] A resin varnish was produced in the same manner as in Example 1, except that 16 parts of Elastomer 3 (non-volatile content: 50% by mass) was used instead of 16 parts of Elastomer 1 (non-volatile content: 50% by mass).

[0195] [Example 11] A resin varnish was produced in the same manner as in Example 1, except that 8 parts of a hydroxyl group-containing acrylic polymer ("ARUFON UH-2000" manufactured by Toagosei Co., Ltd., weight average molecular weight 11,000) was used instead of 16 parts of Elastomer 1 (non-volatile content: 50% by mass).

[0196] [Example 12] A resin varnish was produced in the same manner as in Example 1, except that 7.5 parts of a phenol novolak resin ("TD-2090-60M" manufactured by DIC Corporation, hydroxyl group equivalent: about 105 g / eq., MEK solution with a solid content of 60%) was used instead of 10 parts of a phenolic curing agent having a triazine skeleton and a novolak structure ("LA-3018-50P" manufactured by DIC Corporation, active group equivalent: about 151 g / eq., 2-methoxypropanol solution with a solid content of 50%).

[0197] [Example 13] A resin varnish was produced in the same manner as in Example 1, except that 10 parts of a naphthalene-based phenol resin ("SN485" manufactured by Nippon Steel Chemical & Material Co., Ltd., hydroxyl group equivalent: 215 g / eq., MEK solution with a solid content of 60% by mass) was used instead of 10 parts of a phenolic curing agent having a triazine skeleton and a novolak structure ("LA-3018-50P" manufactured by DIC Corporation, active group equivalent: about 151 g / eq., 2-methoxypropanol solution with a solid content of 50%).

[0198] [Example 14] A resin varnish was produced in the same manner as in Example 1, except that 10 parts of an active ester compound ("HPC-8000-65T" manufactured by DIC Corporation, active group equivalent: about 223 g / eq., toluene solution with a solid content of 65% by mass) was used instead of 10 parts of a phenolic curing agent having a triazine skeleton and a novolak structure ("LA-3018-50P" manufactured by DIC Corporation, active group equivalent: about 151 g / eq., 2-methoxypropanol solution with a solid content of 50%).

[0199] [Comparative Example 1] A resin varnish was produced in the same manner as in Example 1, except that the chelate-type epoxy resin (“EP-49-10P” manufactured by ADEKA, epoxy equivalent 240 g / eq.) was not used.

[0200] [Comparative Example 2] The chelate-type epoxy resin (“EP-49-10P” manufactured by ADEKA, epoxy equivalent 240 g / eq.) was not used. Also, the amount of the liquid epoxy resin (“ZX1059” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., a 1:1 mixture (mass ratio) of bisphenol A-type epoxy resin and bisphenol F-type epoxy resin, epoxy equivalent: 169 g / eq.) was changed to 6 parts. A resin varnish was produced in the same manner as in Example 1, except for the above matters.

[0201] [Comparative Example 3] The chelate-type epoxy resin (“EP-49-10P” manufactured by ADEKA, epoxy equivalent 240 g / eq.) was not used. Also, the amount of Inorganic filler 1 was changed to 82 parts. Further, the amount of the phenolic curing agent having a triazine skeleton and a novolak structure (“LA-3018-50P” manufactured by DIC, active group equivalent of about 151 g / eq., 2-methoxypropanol solution with a solid content of 50%) was changed to 18 parts. A resin varnish was prepared in the same manner as in Example 1, except for the above matters.

[0202] [Comparative Example 4] The chelate-type epoxy resin (“EP-49-10P” manufactured by ADEKA, epoxy equivalent 240 g / eq.) was not used. Also, the amount of the liquid epoxy resin (“ZX1059” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., a 1:1 mixture (mass ratio) of bisphenol A-type epoxy resin and bisphenol F-type epoxy resin, epoxy equivalent: 169 g / eq.) was changed to 6 parts. Further, 0.3 part of a triazine-functional group-containing silane coupling agent (“VD-5” manufactured by Shikoku Kasei Co., Ltd., 2,4-diamino-6-triethoxysilane triazine) was added to the resin varnish as an adhesion promoter. A resin varnish was produced in the same manner as in Example 1, except for the above matters.

[0203] [Manufacture of Resin Sheet] As a support, a polyethylene terephthalate film (Toray Industries, Inc.'s "Lumirror R80", thickness 38 μm, softening point 130 °C) that had been subjected to a release treatment with an alkyd resin-based release agent (AL-5 manufactured by Lintec Corporation) was prepared. On this support, the resin varnishes produced in the examples and comparative examples were applied with a die coater so that the thickness of the resin composition layer after drying would be 50 μm, and dried at 85 °C to 100 °C for 4 minutes to obtain a resin sheet.

[0204] [Evaluation of Copper Foil Adhesion Strength] <Substrate Treatment of Copper-Clad Laminate> A glass cloth base epoxy resin double-sided copper-clad laminate having a copper foil on the surface (copper foil thickness 18 μm, substrate thickness 0.8 mm, "R-1766" manufactured by Panasonic Corporation) was prepared. Using a micro-etching agent (CZ8101 manufactured by Meck), etching was performed so that the copper etching amount would be 2 μm, and roughening treatment was performed on both sides. The copper-clad laminate thus obtained may be referred to as a "roughened copper-clad laminate".

[0205] <Lamination of Resin Sheet> The resin sheets produced in the examples and comparative examples were laminated on one side of the roughened copper-clad laminate using a batch-type vacuum pressure laminator (Nikko Materials Co., Ltd.'s 2-stage build-up laminator "CVP700") so that the resin composition layer would be joined to the roughened copper-clad laminate. The lamination was performed by reducing the pressure for 30 seconds to make the atmospheric pressure 13 hPa or less, and then pressure-bonding at 100 °C and a pressure of 0.74 MPa for 30 seconds.

[0206] <Substrate Treatment of Copper Foil> A copper foil (electrolytic copper foil "3EC-III" manufactured by Mitsui Mining & Smelting Co., Ltd., thickness 35 μm) was immersed in a micro-etching agent (Meck Etch Bond CZ-8100 manufactured by Meck), and roughening treatment (1 μm etching) was performed on the shiny surface of the copper foil.

[0207] <Lamination and Curing of Copper Foil> The support of the resin sheet laminated on the roughened copper-clad laminate was peeled off to expose the resin composition layer. The resin composition layer and the copper foil were laminated so that the roughened glossy surface was joined to the resin composition layer. The lamination was performed by reducing the pressure for 30 seconds to make the atmospheric pressure 13 hPa or less, and then crimping at 100 °C and a pressure of 0.74 MPa for 30 seconds. Next, under atmospheric pressure, heat pressing was performed at 100 °C and a pressure of 0.5 MPa for 60 seconds to smooth the resin composition layer. Further, by curing the resin composition under the curing conditions of 100 °C for 30 minutes and then 190 °C for 90 minutes, a sample having a layer structure of "roughened copper-clad laminate / cured product layer of resin composition / copper foil" was obtained.

[0208] <Measurement and Evaluation of Peel Strength of Copper Foil> An incision was made in the copper foil to surround a portion with a width of 10 mm and a length of 100 mm. One end of this portion was peeled off and grasped with a gripping tool (autocom type tester "AC-50C-SL" manufactured by T.S.E. Co., Ltd.), and the load (kgf / cm) when peeling 20 mm vertically at a speed of 50 mm / min at room temperature was measured to obtain the peel strength as the copper foil adhesion strength.

[0209] [Evaluation of Si Adhesion Strength] <Lamination and Curing on Silicon Wafer> The resin sheets produced in the examples and comparative examples were laminated on one side of a 12-inch silicon wafer (thickness: 775 μm) using a batch type vacuum pressure laminator (two-stage build-up laminator "CVP700" manufactured by Nippon Materials Co., Ltd.) so that the resin composition layer and the silicon wafer were joined. The lamination was performed by reducing the pressure for 30 seconds to make the atmospheric pressure 13 hPa or less, and then crimping at 100 °C and a pressure of 0.74 MPa for 30 seconds. After lamination, the support of the resin sheet was peeled off. The resin composition was cured under the curing conditions of 100 °C for 30 minutes and then 190 °C for 90 minutes to obtain a laminate having a layer structure of "silicon wafer / cured product layer of resin composition".

[0210] <Preparation of Test Specimen> The obtained laminate was cut into 1 cm squares and placed on a ceramic backing plate with epoxy adhesive (11.4 cm square, P / N 901450) such that the cured layer faced upward. Further, stud pins (rivet-shaped tool; diameter of the adhesive surface: 2.7 mm; P / N 901106) were fixed to the cured layer with epoxy adhesive and heated at 150 °C for 1 hour to bond the stud pins to the cured layer.

[0211] <Stud pull test> Using a Stud pull tester (manufactured by ROMULUS, Quad Group Inc.), the stud pins were pulled at a speed of 2 kgf / sec in a direction perpendicular to the main surface of the cured layer, and the load value (kgf / cm 2 ) at the time when the cured layer peeled off was measured as the Si adhesion strength.

[0212] [Warp evaluation] The resin sheets produced in the examples and comparative examples were laminated on the entire one side of a 12-inch silicon wafer (thickness: 775 μm) using a batch-type vacuum pressure laminator (two-stage build-up laminator "CVP700" manufactured by Nippon Materials Co., Ltd.) so that the resin composition layer and the silicon wafer were joined. The support of the resin sheet was peeled off to expose the resin composition layer, and another resin sheet was laminated on the surface of the resin composition layer in the same manner, and the support was peeled off. By the above lamination, two resin composition layers (total thickness: 100 μm) were formed on one side of the 12-inch silicon wafer. The lamination was carried out under the same conditions as in the above [Si adhesion strength evaluation].

[0213] The laminate was heated in an oven at 100 °C for 30 minutes, and then continuously at 190 °C for 90 minutes to cure the resin composition layer, obtaining a laminate having a layer structure of "silicon wafer / resin composition cured layer". The end of the obtained laminate was pressed against a horizontal table. The distance between the end of the wafer on the side opposite to the pressed end and the table was measured as the amount of warp. Then, the warp was evaluated according to the following criteria. Warp evaluation criteria: "○": The amount of warp is 0 mm or more and 1.5 mm (1500 μm) or less. "×": The amount of warp is greater than 1.5 mm.

[0214] [Measurement of Elastic Modulus] The resin sheets produced in the examples and comparative examples were thermally cured under the conditions of 190 °C for 90 minutes, the support was peeled off, and a sheet-like cured product was obtained. In accordance with Japanese Industrial Standard (JIS K7127), a tensile test of the cured product was performed using a tensilon universal testing machine (manufactured by A&D Company Limited), and the elastic modulus (tensile elastic modulus) of the cured product at room temperature was measured.

[0215] [Measurement of Melt Viscosity] The support was peeled off from the resin sheets produced in the examples and comparative examples to obtain a resin composition layer. By compressing this resin composition layer with a mold, measurement pellets (diameter 18 mm, 1.0 g to 1.1 g) were prepared. Then, for this measurement pellet, using a dynamic viscoelasticity measuring device (Rheosol-G3000 manufactured by UBM), the minimum melt viscosity was measured. Specifically, for 1 g of the measurement pellet, using a parallel plate with a diameter of 18 mm, the temperature was raised from an initial temperature of 60 °C to 200 °C, and the dynamic viscoelastic modulus was measured, and the minimum value was obtained. The measurement conditions were a heating rate of 5 °C / min, a measurement temperature interval of 2.5 °C, a frequency of 1 Hz, and a strain of 5 deg.

[0216] [Results] The results of the above-described examples and comparative examples are shown in the following table. In the following table, the meanings of the abbreviations are as follows. (B) Content: The content of (B) inorganic filler. Active group ratio: The number of active groups of (D) curing agent when the number of epoxy groups of (A) epoxy resin is set to 1.

[0217] [Table 1]

[0218] [Table 2] [Explanation of Reference Signs]

[0219] 100 semiconductor chip package 110 semiconductor chip 120 encapsulation layer 130 redistribution formation layer 140 redistribution layer 150 solder resist layer 160 bump

Claims

1. comprising (A) an epoxy resin, (B) an inorganic filler, and (C) an elastomer, wherein (A) the epoxy resin includes (A-1) an epoxy resin containing a structure having an epoxy group and chelating ability, the amount of component (A) is 10% by mass or more and 50% by mass or less based on 100% by mass of the resin components of the resin composition, the amount of component (A-1) is 0.1% by mass or more and 40% by mass or less based on 100% by mass of the resin components of the resin composition, the amount of component (B) is 60% by mass or more and 95% by mass or less based on 100% by mass of the non-volatile components of the resin composition, the amount of component (C) is 1% by mass or more and 10% by mass or less based on 100% by mass of the non-volatile components of the resin composition, and (C) the elastomer is selected from the group consisting of a resin containing a polybutadiene structure and a resin containing a polycarbonate structure (excluding those containing a latent curing agent), the resin composition.

2. The resin composition according to claim 1, wherein the chelate modification amount of component (A-1) is 0.3% by mass to 10% by mass.

3. The resin composition according to claim 1 or 2, wherein the ratio W(A-1) / W(C) of the mass W(A-1) of component (A-1) to the mass W(C) of component (C) is 0.01 to 1.

0.

4. The resin composition according to any one of claims 1 to 3, wherein component (C) has a number average molecular weight of 1000 or more.

5. The resin composition according to any one of claims 1 to 4, further comprising (D) a curing agent.

6. The resin composition according to any one of claims 1 to 5, further comprising (E) a curing accelerator.

7. The resin composition according to any one of claims 1 to 6, which is for a sealing layer.

8. A cured product of the resin composition according to any one of claims 1 to 7.

9. A resin sheet comprising a support and a resin composition layer formed on the support and containing the resin composition according to any one of claims 1 to 7.

10. A circuit board comprising a cured product of the resin composition according to any one of claims 1 to 7.

11. A semiconductor chip package comprising a cured product of the resin composition according to any one of claims 1 to 7.

12. A semiconductor device comprising the circuit board according to claim 10 or the semiconductor chip package according to claim 11.

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