Substrate Selection Method, Multilayer Substrate Manufacturing Method, Substrate Selection Apparatus, and Multilayer Substrate Manufacturing System

Abstract

To provide a method for manufacturing a laminated substrate by bonding two substrates together, a substrate selection method, a substrate selection device, and a laminated substrate manufacturing system.SOLUTION: A method includes the steps of determining whether a first substrate and a second substrate satisfy a predetermined condition on the basis of information regarding the respective curvatures of the first substrate and the second substrate, bonding the first substrate and the second substrate when the predetermined condition is satisfied, and estimating the amount of positional deviation after bonding the first substrate to the second substrate on the basis of the information, and the predetermined condition is that the amount of positional deviation is less than or equal to a threshold value.SELECTED DRAWING: Figure 14

Description

Technical Field

[0001] The present invention relates to a substrate selection method, a laminated substrate manufacturing method, a substrate selection device, and a laminated substrate manufacturing system.

Background Art

[0002] There is a method of manufacturing a laminated substrate by laminating two substrates (see, for example, Patent Document 1).

[0003] Patent Document 1 Japanese Patent Application Laid-Open No. 2013-098186

[0004] Even when two substrates are aligned and then overlapped, misalignment may occur between the substrates.

Summary of the Invention

[0005] In a first aspect of the present invention, there is provided a method of manufacturing a laminated substrate by bonding a first substrate and a second substrate, the method including: obtaining information regarding the curvature of the first substrate; and determining, based on the information, conditions for bonding the first substrate and the second substrate.

[0006] In a second aspect of the present invention, there is provided an apparatus for manufacturing a laminated substrate by bonding a first substrate and a second substrate, the apparatus including: an acquisition unit that acquires information regarding the curvature of the first substrate; and a determination unit that determines, based on the information, conditions for bonding the first substrate and the second substrate.

[0007] The above summary of the invention does not list all the features of the present invention. Sub-combinations of these feature groups may also be inventions.

Brief Description of the Drawings

[0008]

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Embodiments for Carrying Out the Invention

[0009] Hereinafter, embodiments of the invention will be described. The following embodiments do not limit the invention according to the claims. Not all combinations of features described in the embodiments are essential for the solution means of the invention.

[0010] FIG. 1 is a schematic plan view of a laminated substrate manufacturing apparatus 100. The laminated substrate manufacturing apparatus 100 includes a housing 110, a substrate cassette 120 that houses substrates 210 to be overlapped, a substrate cassette 130 that houses a laminated substrate 230 produced by overlapping substrates 210, a control unit 150, a transport unit 140, a lamination unit 300, a holder stocker 400 that houses a substrate holder 220 for holding the substrates 210, and a pre-aligner 500. The interior of the housing 110 is temperature-controlled and, for example, maintained at room temperature.

[0011] The transfer unit 140 transfers a single substrate 210, a substrate holder 220, a substrate holder 220 holding the substrate 210, a stacked substrate 230 formed by stacking a plurality of substrates 210, and the like. The control unit 150 comprehensively controls each part of the stacked substrate manufacturing apparatus 100 in cooperation with each other. Further, the control unit 150 receives an instruction from a user from the outside and sets manufacturing conditions when manufacturing the stacked substrate 230. Furthermore, the control unit 150 also has a user interface that displays the operating state of the stacked substrate manufacturing apparatus 100 to the outside.

[0012] The lamination unit 300 has a pair of stages that each hold a substrate 210 and face each other. After aligning the substrates 210 held on the stages with each other, the stacked substrate 230 is formed by bringing them into contact with each other and laminating them.

[0013] The pre-aligner 500 aligns the substrate 210 with the substrate holder 220 and holds the substrate 210 on the substrate holder 220. The substrate holder 220 is formed of a hard material such as alumina ceramics and adsorbs and holds the substrate 210 by an electrostatic chuck, a vacuum chuck, or the like.

[0014] In the stacked substrate manufacturing apparatus 100 as described above, in addition to the substrate 210 on which elements, circuits, terminals, etc. are formed, an unprocessed silicon wafer, a SiGe substrate added with Ge, a Ge single crystal substrate, a compound semiconductor wafer such as a group III-V or II-VI compound, and a glass substrate can also be joined. The objects to be joined may be a circuit board and an unprocessed substrate, or unprocessed substrates themselves. The substrate 210 to be joined may itself be a stacked substrate 230 having a plurality of substrates already stacked.

[0015] FIG. 2 is a schematic plan view of the substrates 210 to be laminated in the stacked substrate manufacturing apparatus 100. The substrate 210 has a notch 214, a plurality of circuit regions 216, and a plurality of alignment marks 218.

[0016] The circuit regions 216 are arranged periodically in the plane direction of the substrate 210 on the surface of the substrate 210. Each of the circuit regions 216 is provided with structures such as wirings and protective films formed by photolithography technology or the like. The circuit regions 216 are also provided with connection portions such as pads and bumps that serve as connection terminals when connecting the substrate 210 to other substrates 210, lead frames, etc. The connection portions are also an example of the structures formed on the surface of the substrate 210.

[0017] The alignment marks 218 are an example of the structures formed on the surface of the substrate 210 and are arranged on the scribe lines 212 arranged between the circuit regions 216. The alignment marks 218 are indicators when aligning the substrate 210 with other substrates 210.

[0018] FIG. 3 is a flowchart showing the procedure for manufacturing the stacked substrate 230 by stacking two substrates 210 in the stacked substrate manufacturing apparatus 100. First, a combination of substrates 211 and 213 to be overlapped and joined is determined from among the plurality of substrates 210 (step S101). Since a plurality of examples of methods for determining the combination of substrates 211 and 213 can be exemplified, after explaining the overlapping procedure of the substrates 210, it will be described with reference to FIGS. 14 and later.

[0019] Next, in the pre-aligner 500, the substrates 211 and 213 to be overlapped are respectively held by the substrate holders 221 and 223 (step S102). Thereafter, the substrate holders 221 and 223 holding the substrates 211 and 213 individually are sequentially carried into the overlapping portion 300 as shown in FIG. 5 (step S103). In the example shown in FIG. 4, the substrate holder 223 has a flat and smooth holding surface 225.

[0020] The overlapping portion 300 includes a frame body 310, an upper stage 322, and a lower stage 332. The upper stage 322 is fixedly disposed downward on the top plate 316 of the frame body 310. The upper stage 322 has a holding function such as a vacuum chuck or an electrostatic chuck.

[0021] In the illustrated state, the substrate 213 held by the substrate holder 223 having a flat holding surface 225 is held by the upper stage 322 located on the upper side in the figure, and the substrate holder 221 having a curved holding surface 225 is held by the lower stage 332 located on the lower side in the figure. However, the combination of the upper stage 322 and the lower stage 332 with the substrate holders 221 and 223 is not limited to this. Also, the flat substrate holder 223 or the substrate holder 221 with a curved holding surface may be carried into both the upper stage 322 and the lower stage 332.

[0022] On the top plate 316, the microscope 324 and the activation device 326 are fixed to the side of the upper stage 322. The microscope 324 can observe the upper surface of the substrate 211 held by the lower stage 332. The activation device 326 generates plasma for cleaning the upper surface of the substrate 211 held by the lower stage 332.

[0023] The lower stage 332 is mounted on the upper surface in the figure of the Y-direction drive unit 333 stacked on the X-direction drive unit 331 arranged on the bottom plate 312 of the frame body 310. The X-direction drive unit 331 moves in the direction indicated by the arrow X in the figure parallel to the bottom plate 312. The Y-direction drive unit 333 moves on the X-direction drive unit 331 in the direction indicated by the arrow Y in the figure parallel to the bottom plate 312. By combining the operations of the X-direction drive unit 331 and the Y-direction drive unit 333, the lower stage 332 moves two-dimensionally parallel to the bottom plate 312.

[0024] Also, the lower stage 332 is supported by an elevating drive unit 338 that moves up and down in the direction indicated by the arrow Z perpendicular to the bottom plate 312. Thereby, the lower stage 332 can move up and down with respect to the Y-direction drive unit 333.

[0025] The amount of movement of the lower stage 332 by the X-direction drive unit 331, the Y-direction drive unit 333, and the elevating drive unit 338 is precisely measured using an interferometer or the like.

[0026] In the Y-direction driving unit 333, a microscope 334 and an activation device 336 are mounted on the sides of the lower stage 332, respectively. The microscope 334 can observe the lower surface of the downward substrate 213 held by the upper stage 322. The activation device 336 generates plasma for cleaning the lower surface of the substrate 213 held by the upper stage 322. Incidentally, the activation devices 326 and 336 may be provided in a device different from the superposition unit 300, and the substrate and the substrate holder with the upper surface activated may be transported from the activation devices 326 and 336 to the superposition unit 300 by a robot.

[0027] In addition, the superposition unit 300 may further include a rotation driving unit that rotates the lower stage 332 around a rotation axis perpendicular to the bottom plate 312, and a swing driving unit that swings the lower stage 332. Thereby, the lower stage 332 can be made parallel to the upper stage 322, and the substrate 211 held by the lower stage 332 can be rotated to improve the alignment accuracy of the substrates 211 and 213.

[0028] The microscopes 324 and 334 are calibrated by the control unit 150 by aligning the focal points with each other or observing a common index. Thereby, the relative positions of the pair of microscopes 324 and 334 in the superposition unit 300 are measured.

[0029] Subsequent to the state shown in FIG. 5, as shown in FIG. 6, the control unit 150 operates the X-direction driving unit 331 and the Y-direction driving unit 333 to detect the alignment marks 218 provided on the substrates 211 and 213 by the microscopes 324 and 334 (step S104 in FIG. 3).

[0030] Thus, by detecting the positions of the alignment marks 218 on the substrates 211 and 213 using the microscopes 324 and 334 with known relative positions, the relative positions of the substrates 211 and 213 can be determined (step S105). Accordingly, when aligning the substrates 211 and 213, the relative movement amount of the substrates 211 and 213 may be calculated such that the displacement between the corresponding alignment marks 218 on the substrates 211 and 213 is equal to or less than a threshold value, or the displacement between the corresponding circuit regions 216 or connection portions between the substrates 211 and 213 is equal to or less than a threshold value. The displacement refers to the displacement between the corresponding alignment marks 218 and the displacement between the corresponding connection portions between the stacked substrates 211 and 213, and includes the displacement caused by the difference in the amount of distortion generated in each of the two substrates 211 and 213. The distortion will be described later.

[0031] Subsequent to the state shown in FIG. 6, as shown in FIG. 7, the control unit 150 records the relative positions of the pair of substrates 211 and 213 and chemically activates the bonding surfaces of each of the pair of substrates 211 and 213 (step S106 in FIG. 3). First, the control unit 150 resets the position of the lower stage 332 to the initial position and then moves it horizontally to scan the surfaces of the substrates 211 and 213 with the plasma generated by the activation devices 326 and 336. As a result, the surfaces of the substrates 211 and 213 are each cleaned and the chemical activity is increased.

[0032] In addition to the method of exposing to plasma, the surfaces of the substrates 211 and 213 can also be activated by sputter etching using an inert gas, an ion beam, or a high-speed atomic beam. When using an ion beam or a high-speed atomic beam, it is possible to generate the overlapping portion 300 under reduced pressure. Furthermore, the substrates 211 and 213 can also be activated by ultraviolet irradiation, an ozone asher, or the like. Further, for example, the surfaces of the substrates 211 and 213 may be activated by chemically cleaning the surfaces of the substrates 211 and 213 using a liquid or gaseous etchant. After the surfaces of the substrates 210 are activated, the surfaces of the substrates 211 and 213 may be hydrophilized by a hydrophilizing device.

[0033] Subsequent to the state shown in FIG. 7, as shown in FIG. 8, the control unit 150 aligns the substrates 211 and 213 with each other (step S107 in FIG. 3). First, the control unit 150 moves the lower stage 332 so that the positions of the corresponding circuit regions 216 of the substrates 211 and 213 coincide based on the relative positions of the microscopes 324 and 334 detected first and the positions of the alignment marks 218 of the substrates 211 and 213 detected in step S104.

[0034] Subsequent to the state shown in FIG. 8, as shown in FIG. 9, the control unit 150 operates the lifting drive unit 338 to raise the lower stage 332 and bring the substrates 211 and 213 into contact with each other. As a result, a part of the substrates 211 and 213 comes into contact and joins (step S108).

[0035] Since the surfaces of the substrates 211 and 213 are activated, when a part comes into contact, adjacent regions are automatically adsorbed and joined to each other by the intermolecular force between the substrates 211 and 213. Thus, for example, by releasing the holding of the substrate 213 to the substrate holder 223 held by the upper stage 322, the joined region of the substrates 211 and 213 sequentially expands from the contacted part to adjacent regions. As a result, a bonding wave in which the contacted region sequentially expands is generated, and the joining of the substrates 211 and 213 proceeds. Eventually, the substrates 211 and 213 come into contact over the entire surface and are joined (step S108). Thereby, the substrates 211 and 213 form the laminated substrate 230.

[0036] During the process in which the contact region of the substrates 211 and 213 expands as described above, the control unit 150 may release the holding of the substrate 213 by the substrate holder 223. Further, the holding of the substrate holder 223 by the upper stage 322 may be released.

[0037] Furthermore, without releasing the substrate 213 on the upper stage 322, by releasing the substrate 211 on the lower stage 332, the bonding of the substrates 211 and 213 may proceed, or both of the two substrates 211 and 213 may be released. Further, while holding the substrates 213 and 211 on both the upper stage 322 and the lower stage 332, the substrates 211 and 213 may be bonded by bringing the upper stage 322 and the lower stage 332 closer to each other.

[0038] The stacked substrate 230 thus formed is carried out from the overlapping portion 300 together with the substrate holder 221 by the transport unit 140 (step S109). Thereafter, in the pre-aligner 500, the stacked substrate 230 and the substrate holder 221 are separated, and the stacked substrate 230 is transported to the substrate cassette 130.

[0039] If the amounts of distortion generated in each of the two substrates 210 are different from each other, in the overlapping portion 300, even if alignment is performed in the plane direction of the substrate 210 based on the alignment mark 218 or the like, the amount of relative movement and relative rotation for which the amount of misalignment between the substrates 211 and 213 becomes equal to or less than the threshold value cannot be calculated, and the misalignment between the substrates 211 and 213 may not be eliminated. Therefore, in step S101 shown in FIG. 3, the combination of the substrates 211 and 213 to be overlapped is determined so that the misalignment due to the difference in the final magnification as a result of bonding the substrates 211 and 213 to each other becomes equal to or less than the threshold value.

[0040] Here, the distortion generated in the substrate 211 (213) is the displacement of the design coordinates of the structure in the substrate 211 (213), that is, the displacement from the design position. The distortion generated in the substrate 211 (213) includes planar distortion and three-dimensional distortion.

[0041] The planar distortion is the distortion generated in the direction along the bonding surface of the substrates 211 and 213, and includes the linear distortion in which the displaced positions with respect to the design positions of the structures of the substrates 211 and 213 are represented by linear transformation, and non-linear distortion other than the linear distortion that cannot be represented by linear transformation.

[0042] Linear distortion includes a magnification rate at which the displacement amount increases at a constant rate along the radial direction from the center. The magnification rate is a value obtained by dividing the deviation amount from the design value at the distance X from the centers of the substrates 211 and 213 by X, and the unit is ppm. The magnification rate includes an isotropic magnification rate in which the displacement vector from the design position has the same amount of X component and Y component, and an anisotropic magnification rate in which the displacement vector from the design position has components of different amounts from each other.

[0043] In this embodiment, the design positions of the structures in each of the two substrates 211 and 213 to be bonded are common, and the difference in the magnification rate based on the design positions in each of the two substrates 211 and 213 becomes the amount of misalignment between the two substrates 211 and 213.

[0044] Also, linear distortion includes orthogonal distortion. Orthogonal distortion is a distortion in which when the X-axis and Y-axis orthogonal to each other are set with the center of the substrate as the origin, the structure is displaced parallel to the X-axis direction from the design position by a larger amount as it moves farther from the origin in the Y-axis direction. The displacement amount is equal in each of a plurality of regions crossing the Y-axis parallel to the X-axis, and the absolute value of the displacement amount increases as it moves away from the X-axis. Furthermore, in orthogonal distortion, the displacement directions on the positive side and negative side of the Y-axis are opposite to each other.

[0045] The three-dimensional distortion of the substrates 211 and 213 is displacement in a direction other than the direction along the bonding surface of the substrates 211 and 213, that is, a direction intersecting the bonding surface. The three-dimensional distortion includes curvature generated in the whole or a part of the substrates 211 and 213 due to the whole or partial bending of the substrates 211 and 213. Here, "the substrate bends" means that the surfaces of the substrates 211 and 213 change to a shape that includes points not existing on the plane specified by three points on the substrates 211 and 213.

[0046] Also, curvature refers to the distortion in which the surface of the substrate forms a curved surface, and includes, for example, the warping and bending of substrates 211 and 213. In this embodiment, warping refers to the distortion remaining in substrates 211 and 213 with the influence of gravity excluded. The distortion of substrates 211 and 213 with the influence of gravity added to the warping is called bending. Note that the warping of substrates 211 and 213 includes global warping in which the entire substrates 211 and 213 are bent with a generally uniform curvature, and local warping in which local curvature changes occur in a part of substrates 211 and 213.

[0047] Here, the magnification is classified into an initial magnification, a planarization magnification, and a bonding process magnification according to the cause of occurrence.

[0048] The initial magnification occurs from a stage before superposing substrates 211 and 213 as a deviation from the design specifications of substrates 211 and 213 due to stress generated in the process of forming alignment marks 218, circuit regions 216, etc. on substrates 211 and 213, anisotropy due to the crystal orientation of substrates 211 and 213, periodic rigidity changes due to the arrangement of scribe lines 212, circuit regions 216, etc. Therefore, the initial magnification of substrates 211 and 213 can be known before starting the lamination of substrates 211 and 213. For example, the control unit 150 may acquire information regarding the initial magnification from the process equipment that manufactured substrates 211 and 213.

[0049] The planarization magnification corresponds to the change in magnification that occurs when substrates 211 and 213 with distortions such as warping are planarized by bonding or by adsorption to a flat holding member. That is, when a warped substrate 210 is adsorbed and held on a flat substrate holder 223 shown in FIG. 4, for example, the substrate 210 becomes flat following the shape of the holding surface 225. Here, when the substrate 210 changes from a warped state to a flat state, the amount of distortion of the substrate 210 changes compared to before being held.

[0050] As a result, the amount of displacement with respect to the design specification of the circuit region 216 on the surface of the substrate 210 changes as compared to before being held. The change in the amount of distortion of the substrate 210 varies depending on the structure of structures such as the circuit region 216 formed on the substrate 210, the process for forming the structures, the magnitude of the warp of the substrate 210 before holding, and the like. Similar to the bonding process magnification, when the substrates 211 and 213 have distortions such as warps, the state of the distortion including the amount and shape of the warps of the substrates 211 and 213 can be calculated by examining in advance the correlation between the distortion and the magnification.

[0051] The bonding process magnification is a newly generated change in magnification due to the distortion that occurs in the substrates 211 and 213 during the bonding process. FIGS. 10, 11, 12, and 13 are diagrams for explaining the bonding process magnification. In FIGS. 10, 11, and 12, an enlarged view of a region Q near a boundary K between a contact region where the substrates 211 and 213 are in contact with each other and a non-contact region where the substrates 211 and 213 are separated from each other and are to be overlapped in the substrates 211 and 213 in the process of being bonded at the overlapping portion 300 is shown.

[0052] As shown in FIG. 10, in the process in which the contact area of the two overlapped substrates 211 and 213 expands in area from the center toward the outer periphery, the boundary K moves from the center side toward the outer periphery side of the substrates 211 and 213. In the vicinity of the boundary K, elongation occurs in the substrate 213 released from the holding by the substrate holder 223. Specifically, at the boundary K, with respect to the central plane in the thickness direction of the substrate 213, the substrate 213 elongates on the lower surface side in the drawing of the substrate 213 and contracts on the upper surface side in the drawing of the substrate 213.

[0053] As a result, as shown by the dotted line in the figure, on the substrate 213, at the outer end of the region joined to the substrate 211, it is distorted as if the magnification with respect to the design specification of the circuit region 216 on the surface of the substrate 213 is enlarged relative to the substrate 211. For this reason, as appears as a deviation of the dotted line in the figure, a displacement occurs between the lower substrate 211 held by the substrate holder 222 and the upper substrate 213 released from the substrate holder 223 due to the amount of elongation of the substrate 213, that is, the difference in magnification.

[0054] Furthermore, as shown in FIG. 11, when the substrates 211 and 213 are brought into contact and joined in the above state, the enlarged magnification of the substrate 213 is fixed. Further, as shown in FIG. 12, the amount of elongation of the substrate 213 fixed by the joining is accumulated as the boundary K moves to the outer periphery of the substrates 211 and 213.

[0055] The amount of the joining process magnification as described above can be calculated based on physical quantities such as the rigidity of the substrates 211 and 213 to be overlapped and the viscosity of the atmosphere sandwiched between the substrates 211 and 213. Also, the amount of displacement generated by overlapping substrates manufactured in the same lot as the substrates 211 and 213 to be overlapped may be measured and recorded in advance, and the control unit 150 may acquire the recorded measured value as information regarding the joining process magnification that occurs in the joining of the substrates 211 and 213 of the lot.

[0056] FIG. 13 is a diagram showing the distribution of displacement due to the magnification difference between the two substrates 211 and 213 constituting the laminated substrate 230. The shown displacement has a displacement amount that gradually increases radially in the plane direction from the center point of the laminated substrate 230. Note that the shown magnification includes the initial magnification and the flattening magnification generated before the substrates 211 and 213 are overlapped and the joining process magnification generated during the process of overlapping the substrates 211 and 213.

[0057] When bonding the substrates 211 and 213, release the other substrate 213 while holding one substrate, for example, substrate 211. Therefore, at the time when the substrates 211 and 213 are bonded, the held substrate 211 has its shape fixed, while the released substrate 213 is bonded while being distorted. Thus, it is not necessary to consider the bonding process magnification for the substrate 211 that is bonded while fixed, but it is desirable to consider the bonding process magnification for the substrate 213 that is released.

[0058] When the fixed substrate 211 is held in a distorted state due to the shape of the substrate holder 221 or the like, it is desirable to consider both the bonding process magnification and the flattening magnification for the released substrate 213. Further, when there is distortion such as warping in the substrate 213, it is desirable to consider the bonding process magnification and the flattening magnification that take this distortion into account.

[0059] In this way, the final magnification difference after lamination of the superposed substrates 211 and 213 is formed by the difference in the initial magnifications that the substrates 211 and 213 originally have, the difference in the flattening magnification that occurs when the substrates 211 and 213 are held by the substrate holders 221, 223, etc., and the bonding process magnification of the substrate 213 whose holding is released during the bonding process overlapping each other.

[0060] As described above, the misalignment that occurs in the laminated substrate 230 formed by laminating the substrates 211 and 213 is related to the initial magnification difference, the flattening magnification difference, and the magnitude of the bonding process magnification. Also, the magnification that occurs in the substrates 211 and 213 is related to the distortion of the substrate such as warping.

[0061] Furthermore, as described above, these initial magnification difference, flattening magnification difference, and bonding process magnification can be predicted by measurement, calculation, etc. before bonding. Therefore, by determining and corresponding to the combination of the substrates 211 and 213 to be bonded based on the magnification predicted for the substrates 211 and 213 before bonding, it is possible to suppress the misalignment in the laminated substrate 230 manufactured by bonding from becoming excessive.

[0062] FIG. 14 shows the content of the procedure for determining the combination of substrates 211 and 213 to be superposed in step S101 shown in FIG. 3.

[0063] When determining the combination of substrates 211 and 213 to be superposed, the control unit 150 of the laminated substrate manufacturing apparatus 100 first collects information on the curvature of substrates 211 and 213 for each of one substrate cassette 120, or a group of substrates 211 and 213 such as a plurality of substrates 210 belonging to the same lot (step S201).

[0064] The control unit 150 forms an acquisition unit that acquires information on the curvature including the warpage of substrates 211 and 213 to be superposed.

[0065] The information on the curvature of substrates 211 and 213 includes information obtained by measuring substrate 210, such as the magnitude, direction, warped part, and internal stress of the warpage of substrates 211 and 213, information on the cause of the warpage of substrates 211 and 213, and information such as the magnitude and direction of the warpage of substrates 211 and 213 estimated from the cause.

[0066] When measuring the warpage of substrates 211 and 213, while supporting the centers of substrates 211 and 213 in the plane direction and rotating them around the center, the surface or back surface of substrates 211 and 213 is observed with a non-contact distance meter such as a microscope provided in the superposition part 300, for example, and the position of the surface or back surface is measured based on the distribution of the distance information obtained from the automatic focusing function of the optical system of the microscope.

[0067] As a result, the magnitudes, directions, etc. of the bending of substrates 211 and 213 can be measured. The magnitudes and directions of the bending of substrates 211 and 213 are obtained from the displacements of a plurality of positions on the front or back surfaces in the thickness direction of substrates 211 and 213 with respect to the supported center. In this embodiment, the average value of the displacements at a plurality of positions of each of substrates 211 and 213 is the magnitude of the global warpage. The difference between the bending and warpage in substrates 211 and 213 can be known based on the results of measuring substrates 211 and 213 without warpage under the same conditions. Therefore, after measuring the bending of substrates 211 and 213 with warpage, the amount of warpage of substrates 211 and 213 can be calculated by subtracting the difference.

[0068] Furthermore, with substrates 211 and 213 adsorbed by a substrate holder 221 or the like and forced to be flat, the residual stress of substrates 211 and 213 may be measured by Raman scattering or the like, and this residual stress may be used as information regarding the warpage of the substrate. Furthermore, information regarding the warpage of substrates 211 and 213 may be measured in a pretreatment apparatus such as an exposure apparatus or a film forming apparatus that is used in a process performed before the laminate substrate manufacturing apparatus 100. Also, the measurement of the warpage of substrates 211 and 213 may be performed before substrates 211 and 213 are carried into the overlapping portion 300. For example, in the laminate substrate manufacturing apparatus 100, a measuring device for measuring the warpage of substrates 211 and 213 may be provided in the pre-aligner 500.

[0069] On the other hand, when obtaining information regarding the warpage of substrates 211 and 213 analytically without measuring the warpage of substrates 211 and 213, the magnitude, direction, etc. of the warpage generated in substrates 211 and 213 may be estimated based on information regarding the structure and material of structures such as the circuit region 216 formed in substrates 211 and 213. Also, the processing process for substrates 211 and 213 that occurred during the process of forming the above structures, that is, information regarding the thermal history associated with film formation or the like, chemical processes such as etching, etc. may be used as information causing warpage, and the warpage generated in substrates 211 and 213 may be estimated based on this information.

[0070] Also, when estimating the warpage occurring in substrates 211 and 213, peripheral information such as the surface structure of substrates 211 and 213 that may cause the warpage, the film thickness of the thin films laminated on substrate 210, the tendencies, variations, film-forming procedures, and conditions of film-forming apparatuses such as the CVD apparatus used for film formation may also be referred to. These peripheral information may be measured again for the purpose of estimating warpage.

[0071] Furthermore, to estimate the warpage of substrates 211 and 213 as described above, past data obtained by processing equivalent substrates may be referred to, or experiments on processes assumed for substrates equivalent to substrates 211 and 213 to be laminated may be conducted to prepare in advance data on the relationship between the warpage amount and the magnification, the relationship between the difference in warpage amounts and the magnification difference, or the combination of warpage amounts for which the difference in magnification, that is, the amount of misalignment, is equal to or less than the threshold value. Furthermore, based on the film-forming structure and film-forming conditions of substrates 211 and 213 to be laminated, the warpage amount may be analytically obtained by the finite element method or the like to prepare data.

[0072] Note that the measurement of the amount of strain on substrates 211 and 213 may be performed outside the laminated substrate manufacturing apparatus 100, or a device for measuring the strain of substrates 211 and 213 may be incorporated inside the laminated substrate manufacturing apparatus 100 or a system including the laminated substrate manufacturing apparatus 100. Furthermore, the internal and external measuring devices may be used in combination to increase the measurement items.

[0073] Next, the control unit 150 selects an arbitrary first substrate 213 from the plurality of substrates 210 for which information regarding curvature has been acquired in step S201 (step S202), and calculates the magnification that will finally remain for each when the first substrate 213 selected and a second substrate 211 that is temporarily combined with the first substrate 213 are laminated (step S203). In the following description, the magnification that finally remains for the two substrates 211 and 213 is referred to as the final magnification. Furthermore, the control unit 150 compares the difference in the calculated final magnifications with a predetermined threshold value to determine whether the temporary combination of the first substrate 213 and the second substrate 211 satisfies predetermined conditions for the laminated substrate 230 (step S204).

[0074] In this embodiment, the predetermined condition is, for example, a threshold value corresponding to the maximum displacement amount that enables electrical conduction between substrates 211 and 213 as a result of bonding substrates 211 and 213 to each other. When structures such as connection portions are provided on substrates 211 and 213, respectively, it is a value corresponding to the displacement amount between substrates 211 and 213 when the structures come into contact with each other at least partially. The threshold value is, for example, 1.0 μm or less, and more preferably 0.5 μm or less. When the displacement amount is greater than the threshold value, the connection portions do not contact each other, or appropriate electrical conduction cannot be obtained, or a predetermined bonding strength cannot be obtained between the bonding portions. The threshold value may be set according to the correction amount by a correction unit such as a substrate holder or a correction mechanism for distortion correction, which will be described later.

[0075] In step S204, when the control unit 150 determines that the provisional combination of substrates 211 and 213 satisfies the predetermined condition (step S204: YES), the control unit 150 causes the bonding process after step S102 (FIG. 3) to be executed for this combination of substrates 211 and 213. On the other hand, in step S204, when the control unit 150 determines that the combination of substrates 211 and 213 does not satisfy the predetermined condition (step S204: NO), the control unit 150 executes a countermeasure so that these substrates 211 and 213 can satisfy the condition without performing the bonding of the provisionally combined substrates 211 and 213 (step S205).

[0076] FIG. 15 is a flowchart for explaining one of the procedures of the countermeasure executed in step S205 described above. First, the control unit 150 determines a first substrate 213 for which the countermeasure is to be executed (step S301). Next, the control unit 150 acquires information regarding the curvature measured in step S201 (FIG. 14) for the selected first substrate 213 (step S302).

[0077] Next, the control unit 150 calculates, from the information obtained for the selected first substrate 213 and the value of the difference in the final magnification that satisfies a predetermined condition when the first substrate 213 is bonded to form the laminated substrate 230, the allowable magnification range for the second substrate 211 that can be combined with the first substrate 213, that is, the magnification range that will finally occur in the second substrate 211 as a result of bonding to the first substrate 213. At this time, the control unit 150 calculates, for example, a magnification that can cancel out the bonding process magnification that occurs in the first substrate 213 during the lamination process, and sets a numerical range centered on that value as the allowable range.

[0078] Next, a second substrate 211 having a state of distortion such as warping corresponding to the magnification within the above range is selected from among the plurality of substrates for which information regarding curvature has already been obtained in step S201 (FIG. 14) and combined with the first substrate 213 (step S303). At this time, the control unit 150 estimates the final magnification of the second substrate 211 based on the information regarding curvature such as warping, and determines a second substrate whose final magnification falls within the above range (step S303). In this way, a combination of substrates that can form a laminated substrate 230 satisfying predetermined conditions is formed when bonded.

[0079] In step S303 described above, when the substrates 211 and 213 are superposed in a flat state, it is preferable to combine the first substrate 213 and the second substrate 211 so that the difference in magnification in the state held by the substrate holders 221 and 213, that is, the difference between the sum of the initial magnification and the flattening magnification of the substrates 211 and 213, is small. The magnification of each of the substrates 211 and 213 in the state held by the substrate holders 223 and 221 can be calculated from the information regarding warping or estimated from the relationship between the warping amount and the magnification.

[0080] Also, in step S303, when the first substrate 213 held by the substrate holder 223 having a convex holding surface and the second substrate 211 held by the substrate holder 221 having a flat holding surface are overlapped by releasing the holding of the first substrate 213, the magnification in the state of being held by the substrate holder 221 having a flat holding surface, that is, the sum of the initial magnification and the flattening magnification, and the sum of the initial magnification and the joining process magnification, which is the final magnification of the first substrate 213, are combined with the second substrate 211 in which the difference from the magnification with a small difference is equal to or less than the threshold value. In this case, the relationship between the final magnification and the warpage state of the substrates 211 and 213 may be experimentally obtained in advance.

[0081] Also, the magnification of the second substrate 211 in the state of being held by the substrate holder 221 and the final magnification of the first substrate 213 can be calculated from the relationship between the information regarding the curvature or the warpage amount and the magnification, respectively.

[0082] In this way, at the stage of determining the combination of the substrates 211 and 213, by estimating the magnification at the stage of overlapping the substrates 211 and 213 based on the distortion such as the warpage of the substrates 211 and 213 or the final magnification after overlapping, the misalignment caused by the difference in magnification can be prevented or suppressed. Further, by combining the substrates 210 in which the difference in magnification at the overlapping stage is equal to or less than the threshold value, the joining failure due to the difference in magnification is prevented.

[0083] Also, by combining the substrates 210 with a small difference in magnification at the overlapping stage, at least the misalignment can be reduced. Further, even when some correction is made to the substrate 210 as described later, the misalignment can be eliminated with a small amount of correction. Further, by determining the combination of the substrates before the stage of aligning in the overlapping portion 300 or before detecting the alignment mark, the difference in magnification is suppressed, so that the alignment in the overlapping portion 300 can be speeded up and the throughput of the multilayer substrate manufacturing apparatus 100 can be improved.

[0084] Note that, as described above, the determination of the combination based on the information regarding the curvature of the substrate 210 is preferably made before the step of overlapping the substrates 211 and 213 (step S103 shown in FIG. 3), and at the same time, preferably before the activation of the surfaces of the substrates 211 and 213 to be overlapped (step S106 shown in FIG. 3). Thereby, it is possible to avoid the activation of the substrates 211 and 213 being wasted when the combination to be overlapped cannot be determined even though the substrates 211 and 213 have been activated.

[0085] In the above embodiment, for the substrate 210 for which a combination with a magnification difference within an allowable range cannot be determined within one lot or cassette, the range of the combination may be extended to other lots or other substrate cassettes 120. In this case, a cassette for accommodating the substrate 210 for which the combination is not determined may be provided, and the cassette may be made to wait until the substrate 210 to be combined is found.

[0086] In the above embodiment, the combination of the first substrate 213 and the second substrate 211 was determined based on the amount of displacement and magnification estimated from the information regarding the curvature of the first substrate 213 and the second substrate 211. Instead, the combination may be determined based on the type and amount of strain and other strain states of the first substrate 213, and the strain state of the second substrate 211. The strain state is one of the information regarding the curvature and includes the warping state such as the warping shape and the warping amount. In this case, the conditions to be satisfied for the combination include that the combination of the strain state of the first substrate 213 and the strain state of the second substrate 211 corresponds to a predetermined combination of strain states. Thus, the combination can be determined based on the shape, such as the strain states of the first substrate 213 and the second substrate 211.

[0087] Further, in the above-described embodiments, the combination of the substrates 211 and 213 may be determined in consideration of the local warpage of the substrates 211 and 213. The warpage state of the warped regions of the substrates 211 and 213 can be measured and estimated in the same manner as the above-described global warpage, and information regarding local warpage and strain can be correlated. In this case, substrates having a mirror image relationship with respect to a plane along the surfaces of the two substrates 211 and 213 are combined in a state where the two substrates 211 and 213 face each other. When joining the two combined substrates 211 and 213, it is preferable to release both substrates 211 and 213 from the substrate holders 221 and 213. Thereby, since equivalent strain can be generated in the regions where the local warpage of both substrates 211 and 213 occurs, displacement due to the difference in strain in the local warpage region is suppressed.

[0088] The substrate 210 to be used for lamination initially has various warpage states randomly as shown on the left side in the figure of FIG. 16. Therefore, when the control unit 150 of the laminate substrate manufacturing apparatus 100 acquires information regarding the curvature of each of the substrates 210 in step S201, based on the acquired information, after acquiring information regarding the curvature of the substrates 210 included in one lot or the substrate cassette 120, the substrates 210 are arranged according to the magnitude of warpage.

[0089] Here, for the arrangement of the substrates 210, without moving the substrates 210, the control unit 150 processes by associating the code for identifying the substrates 210 with the accommodation positions in the substrate cassette 120. For example, a plurality of substrates 210 accommodated in one substrate cassette 120 may be numbered. Thereby, by sequentially combining and laminating the numbered substrates 210, the magnification difference becomes uniform within the cassette or lot, and a high-quality laminate substrate 230 is manufactured as a whole.

[0090] On the one hand, by using a sorter or the like to accommodate the substrates 210 in the substrate cassette 120 such that pairs of substrates 210 with misalignment below a threshold value are adjacent to each other, the control unit 150 of the stacked substrate manufacturing apparatus 100 can perform bonding in an appropriate combination by simply sequentially processing the substrates 210 in the substrate cassette 120. Thereby, the load on the control unit 150 can be reduced and the throughput can be improved.

[0091] Further, as described below, instead of determining the combination of the substrates 210 within the stacked substrate manufacturing apparatus 100, the combination may be determined by an apparatus separate from the stacked substrate manufacturing apparatus 100.

[0092] In this case, an apparatus separate from the stacked substrate manufacturing apparatus 100 measures the shape including the warpage of the substrates 210. The separate apparatus includes a substrate processing apparatus that processes the substrates 210 to be bonded at a pre-bonding stage, such as an exposure apparatus, a film forming apparatus, and a polishing apparatus.

[0093] Based on the information on the shape of the warped substrates 210, the plurality of substrates 210 are sorted into individual substrate cassettes 120, for example, according to the amount of warpage. Alternatively, the identification information for identifying each substrate 210 within one substrate cassette 120 is associated with the information regarding the curvature of each substrate 210 and stored. This sorting may be performed using a sorter. When sorting within the same lot, it is not necessary to transfer the substrates 210 from the cassette in which they were originally accommodated to a dedicated substrate cassette, but when sorting between lots, they may be transferred to a dedicated substrate cassette, or a plurality of substrate cassettes may be arranged and set in the stacked substrate manufacturing apparatus.

[0094] The control unit of the substrate processing apparatus reads data from a data server storing data associating a plurality of substrates 210 with information regarding curvature, determines a combination, or outputs an instruction signal to a combination processing unit that determines a combination, causing the combination processing unit to perform the combination. The control unit of the substrate processing apparatus outputs a signal indicating an instruction to bond a set of combined substrates 210 to the stacked substrate manufacturing apparatus 100. The stacked substrate manufacturing apparatus 100 bonds the substrates in the set substrate cassette according to the instruction of the control unit of the substrate processing apparatus based on the signal received from the control unit of the substrate processing unit.

[0095] FIG. 17 is a flowchart for explaining one of the countermeasure procedures executed in step S205 (FIG. 14). First, the control unit 150 selects a combination of an arbitrary first substrate 213 and a second substrate 211 from a group of substrates 210 for which information regarding the curvature of the substrates has been collected (step S401). That is, the control unit 150 functions as a selection unit that selects a combination of a first substrate 213 and a second substrate 211 that satisfy a predetermined condition from among the plurality of substrates 210. However, the combination selected here is a combination that has already been determined not to satisfy the condition in step S204 (FIG. 14).

[0096] Next, the control unit 150 acquires information regarding the curvature measured in step S201 (FIG. 14) for the selected pair of substrates 211 and 213 (step S402). Thereby, the control unit 150 can grasp the deviation between the final magnification and a given condition in the combination of the first substrate 213 and the second substrate 211, and calculate the correction amount to be executed to satisfy the condition. That is, the control unit 150 functions as an estimation unit that estimates the amount of displacement when the two substrates 211 and 213 are bonded together. Here, the correction amount is the amount of distortion caused in at least one of the two substrates 210 so that the displacement between the two substrates 211 and 213 to be bonded to each other is equal to or less than a threshold value.

[0097] Therefore, by changing the distortion state of at least one of the substrates 211 and 213 by the substrate holder 223 and a correction unit 602 to be described later, the estimated magnification is changed (step S403), and the final magnification of the selected first substrate 213 is made closer to the magnification of the design specification.

[0098] Note that the amount of distortion of the substrates 211 and 213 may be changed by changing the shape of at least one of the substrates 211 and 213 in a state where the substrates 211 and 213 are not overlapped. Also, the shape of each of the substrates 211 and 213 may be changed so as to conform to the design specification, but the shape of either one of the substrates 211 and 213 may be changed so as to match the other. Further, the non-linear distortion of the substrate recorded as information regarding the above-described substrates 211 and 213 may also be corrected together.

[0099] Furthermore, the control unit 150 may calculate an initial magnification corresponding to the magnification generated during the overlapping process such as the joining process magnification, and determine a second substrate 211 having a magnification such that the difference from the calculated initial magnification is equal to or less than a threshold value.

[0100] Furthermore, the control unit 150 corrects the magnification of the determined second substrate 211 by the correction units 601, 602, 603, etc., so that the magnification difference between the substrates 211 and 213 after overlapping becomes equal to or less than a threshold value. In this way, the magnification difference between the substrates 211 and 213 in the laminated substrate 230 can be made extremely small.

[0101] Note that if it is found that the predetermined conditions cannot be satisfied even if any of the substrates 211 and 213 is corrected in step S403, the combination of the substrates 211 and 213 may be changed according to the procedure shown in FIG. 14. Also, if no combination is found for the substrates 211 and 213, they may be temporarily removed from the process and waited until substrates that can be combined are generated.

[0102] Furthermore, in the above example, the substrates 211 and 213 to be bonded were processed on the condition that they satisfied the initial conditions. However, for example, when a combination of substrates 211 and 213 that cannot satisfy the conditions occurs and another substrate 211 is selected, the range that can satisfy the conditions may be expanded by adding another predetermined value to the initial threshold value. Thereby, a decrease in accuracy can be suppressed within a preset range, and the yield of the substrates 211 and 213 can be improved.

[0103] FIG. 18 is a diagram for explaining a method of correcting the initial magnification of the substrate 210 as one of the methods of correcting the distortion of the substrate 210 in step S403 (FIG. 16). The figure shows a state in which the substrate 211 is held by the substrate holder 221.

[0104] Here, the substrate holder 221 has a cross-sectional shape in which the thickness gradually increases from the peripheral portion toward the central portion. Thereby, it has a curved holding surface 225. The substrate 211 adsorbed and held by the substrate holder 221 is in close contact with the holding surface 225 and curves following the shape of the holding surface 225. Therefore, when the surface of the holding surface is a curved surface, for example, a cylindrical surface, a spherical surface, a parabolic surface, etc., the shape of the adsorbed substrate 213 also changes to form such a curved surface.

[0105] When the substrate 211 is adsorbed on the holding surface 225 having such a shape, in the case where the substrate 211 is curved, compared with the central portion A in the thickness direction of the substrate 213 indicated by the one-dot chain line in the figure, on the surface which is the upper surface of the substrate 211 in the figure, the surface of the substrate 211 changes in shape so as to expand in the plane direction from the center toward the peripheral portion. Also, on the back surface which is the lower surface of the substrate 211 in the figure, the surface of the substrate 211 changes in shape so as to shrink in the plane direction from the center toward the peripheral portion.

[0106] In this way, by holding the substrate 211 in the substrate holder 221, the upper surface of the substrate 211 in the figure is enlarged compared to the case where the substrate 211 is in a flat state. Due to such a shape change, positional deviation due to the magnification difference with another substrate 213 can be corrected. If a plurality of substrate holders 221 with different curvatures of the curved holding surface 225 are prepared, the correction amount for magnification can also be adjusted.

[0107] FIG. 19 is a schematic cross-sectional view of a correction unit 601 that can be incorporated into the overlapping unit 300 as an example of a curved portion. In the illustrated example, the correction unit 601 is provided on the lower stage 332 of the overlapping unit 300 and is used when changing the shape of the substrate 211 to be curved for correction in the above-described step S403 (see FIG. 17).

[0108] The correction unit 601 includes a base portion 411, a plurality of actuators 412, and a suction portion 413. The base portion 411 supports the suction portion 413 via the actuator 412.

[0109] The suction portion 413 has a suction mechanism such as a vacuum chuck or an electrostatic chuck and forms the upper surface of the lower stage 332. The suction portion 413 sucks and holds the loaded substrate holder 221.

[0110] The actuators 412 are arranged in a plurality along the lower surface of the suction portion 413 below the suction portion 413. Further, the plurality of actuators 412 are individually driven by the supply of the working fluid through the pump 415 and the valve 416 from the outside under the control of the control unit 150. As a result, the plurality of actuators 412 expand and contract with individually different amounts of expansion and contraction in the thickness direction of the lower stage 332, that is, in the overlapping direction of the substrates 211 and 213, to raise or lower the region where the suction portion 413 is coupled.

[0111] Further, the plurality of actuators 412 are each coupled to the suction portion 413 via a link. The central portion of the suction portion 413 is coupled to the base portion 411 by a support column 414. When the actuator 412 operates in the correction unit 601, the surface of the suction portion 413 is displaced in the thickness direction for each region to which the actuator 412 is coupled.

[0112] FIG. 20 is a schematic plan view of the correction unit 601 and shows the layout of the actuators 412 in the correction unit 601. In the correction unit 601, the actuators 412 are arranged radially around the support column 414. Also, the arrangement of the actuators 412 can be regarded as concentric circles centered on the support column 414. The arrangement of the actuators 412 is not limited to that shown in the figure, and for example, they may be arranged in a grid pattern, a spiral pattern, or the like. Thereby, the substrate 211 can also be corrected by changing its shape into a concentric circle shape, a radial shape, a spiral shape, or the like.

[0113] FIG. 21 is a diagram for explaining the operation of the correction unit 601. As shown in the figure, by individually opening and closing the valve 416, the actuator 412 can be expanded and contracted to change the shape of the suction portion 413. Therefore, if the suction portion 413 is adsorbing the substrate holder 221 and the substrate holder 221 is holding the substrate 211, by changing the shape of the suction portion 413, the shapes of the substrate holder 221 and the substrate 211 can be changed and curved.

[0114] As shown in FIG. 20, the actuators 412 can be regarded as being arranged concentrically, that is, in the circumferential direction of the lower stage 332. Therefore, as shown by the dotted line M in FIG. 21, by grouping the actuators 412 for each circumference and increasing the driving amount as approaching the periphery, the center can be raised on the surface of the suction portion 413, and the shape can be changed into a spherical surface, a parabolic surface, a cylindrical surface, or the like.

[0115] As a result, in the same way as when the substrate 211 is held by the curved substrate holder 221, the substrate 211 can be curved by changing its shape following a spherical surface, a parabolic surface, or the like. Therefore, in the correction unit 601, compared with the central portion B in the thickness direction of the substrate 213 indicated by the dashed-dotted line in the figure, on the upper surface of the substrate 211 in the figure, the shape of the surface of the substrate 211 is changed so as to expand in the plane direction. Also, on the lower surface of the substrate 211 in the figure, the shape of the surface of the substrate 211 is changed so as to contract in the plane direction. Furthermore, by individually controlling the expansion and contraction amounts of the plurality of actuators 412, in addition to other shapes such as a cylindrical surface, the shape of the substrate 211 can be changed to a shape including a plurality of uneven portions and curved, thereby correcting non-linear distortion as well.

[0116] Therefore, by individually operating the actuators 412 of the correction unit 601 through the control unit 150, the deviation of the circuit region 216 on the surface of the substrate 211 from the design specification can be adjusted partially or entirely. Also, the amount of shape change can be adjusted according to the operation amount of the actuator 412.

[0117] In the above example, the suction portion 413 had a shape that bulged in the center. However, by increasing the operation amount of the actuator 412 at the peripheral portion of the suction portion 413 and causing the central portion to sink with respect to the peripheral portion of the suction portion 413, the magnification of the circuit region 216 on the surface of the substrate 211 can also be reduced.

[0118] Also, in the above example, the correction unit 601 was incorporated into the lower stage 332 in the overlapping portion 300, but the correction unit 601 may be incorporated into the upper stage 322 to correct the substrate 213 in the upper stage 322. Furthermore, the correction unit 601 may be incorporated into both the upper stage 322 and the lower stage 332. Moreover, the correction may be shared between the upper stage 322 and the lower stage 332. The correction of the magnification of the substrates 211 and 213 is not limited to the above method, and other correction methods such as thermal expansion or thermal contraction by temperature adjustment may be further introduced.

[0119] FIG. 22 is a diagram for explaining a method of correcting the magnification during the bonding process of the substrate 210 as one method of correcting the distortion of the substrate 210 in step S403 (FIG. 16). In the figure, the lower substrate 211 is held by a substrate holder 221 with a protruding center, so that the magnification is enlarged. The magnification of the substrate 211 corrected here is what is expected for the bonding process magnification of the substrate 213. Therefore, the deviation caused by the difference in magnification between the substrates 211 and 213 is reduced.

[0120] The holding surface 225 of the substrate holder 221 had a shape that bulged in the center. However, by preparing a substrate holder 223 in which the central portion is sunken with respect to the peripheral edge portion of the holding surface 225 and holding the substrate 211, the magnification on the surface of the substrate 211 can be reduced, and the positional deviation with respect to the design specification of the circuit region 216 can also be adjusted.

[0121] FIG. 23 is a schematic cross-sectional view of another correction unit 602 that can correct the bonding process magnification of the substrates 211 and 213 when incorporated into the overlapping portion 300. The correction unit 602 is incorporated into the substrate holders 221 and 223 used in the overlapping portion 300. This correction unit 602 can also be used in combination with a substrate holder 221 having a curved holding surface 225, the above-described correction unit 601, etc. Further, the correction unit 602 can also be used in combination with an electrostatic chuck used when the substrate holder 221 adsorbs the substrate 211.

[0122] The correction unit 602 includes a switch 434, an electrostatic chuck 436, and a voltage source 432. The electrostatic chucks 436 are embedded in the substrate holders 221 and 223. Each of the electrostatic chucks 436 is coupled to a common voltage source 432 via an individual switch 434. Thereby, each of the electrostatic chucks 436 generates an adsorption force on the surfaces of the substrate holders 221 and 223 when the switch 434 that opens and closes under the control of the control unit 150 is closed, and adsorbs the substrates 211 and 213.

[0123] The electrostatic chuck 436 in the correction unit 602 is disposed over the entire holding surface that holds the substrate 213 in the substrate holders 221 and 223. As a result, the substrate holders 221 and 223 each have a plurality of adsorption regions. Therefore, when any one of the switches 434 is closed, the corresponding electrostatic chuck 436 generates an adsorption force and applies the adsorption force to the substrates 211 and 213 at an arbitrary position on the holding surface of the substrate holder 223. When all the switches 434 are closed, all the electrostatic chucks 436 generate an adsorption force and firmly hold the substrates 211 and 213 to the substrate holders 221 and 223.

[0124] FIG. 24 is a diagram for explaining the correction operation of the correction unit 602. In FIG. 24, as in FIG. 22, a part of the substrates 211 and 213 in the process of being overlapped is shown.

[0125] In the process of being overlapped, when an adsorption force is applied to the substrate 213 from above in the drawing by the correction unit 602 to a region near the boundary K where the shape of the substrate 213 has changed, a larger change in shape occurs in the substrate 213 compared to the change in shape when no correction is performed. As a result, correction can be made to increase the amount of elongation of the substrate 213 at the location where the electrostatic chuck 436 is operated.

[0126] Also, in the process of being overlapped, when the holding of the substrate 211 by the substrate holder 221 is partially released, in that region, the lower substrate 211 floats up and bends due to the pulling force from the upper substrate 213. As a result, the shape changes so that the surface of the lower substrate 211 extends, and thus the difference from the amount of extension of the surface of the upper substrate 213 is reduced by this amount of extension. Therefore, by adjusting the amount of bending, i.e., the amount of elongation, of the substrate 211, the positional deviation due to the magnification difference between the substrates 211 and 213 can be reduced.

[0127] In addition, when releasing the holding of the substrate 211 for correction purposes on the lower stage 332, instead of completely eliminating the holding force, the holding force may be weakened. In this way, by adjusting the holding force of the substrate 211 by the substrate holder 221, the magnification of the substrate 211 can also be adjusted, and the positional deviation due to the magnification difference from the substrate 213 can be corrected.

[0128] In this way, by the operation of the correction unit 602, the difference in magnification between the substrates 211 and 213 can be suppressed. Further, the electrostatic chucks 436 arranged on the entire substrate holders 221 and 223 can individually generate or block the adsorption force. Therefore, even when the non-uniform elongation amounts in the substrates 211 and 213 are distributed in a complicated manner, they can be corrected by the correction unit 602.

[0129] In the above example, with respect to the substrate 211 held by the lower stage 332, the substrate 213 held by the upper stage 322 was released all at once, and the substrates 211 and 213 were overlapped by the self-alignment bonding of the substrate 213. However, by sequentially eliminating the adsorption force of the electrostatic chuck 436 from the center of the substrate toward the outside in the plane direction of the upper stage 322, the self-alignment bonding of the substrate 213 can be suppressed, and the expansion of the contact area between the substrates 211 and 213, that is, the movement speed, movement time, movement direction, etc. of the boundary K can be controlled. Thereby, it is possible to suppress the magnification change being accumulated closer to the outer periphery and the magnification difference increasing closer to the outer periphery.

[0130] FIG. 25 is a schematic cross-sectional view of another correction unit 603 that can correct the bonding process magnification of the substrates 211 and 213 when incorporated into the overlapping unit 300. The correction unit 603 is incorporated into the substrate holder 223 used in the upper stage 322 of the overlapping unit 300.

[0131] The correction unit 603 is provided in the substrate holder 223 and includes a plurality of openings 426 that open toward the substrate 213 held by the substrate holder 223. One end of each of the openings 426 communicates with a pressure source via a valve 424 through the upper stage 322. The pressure source 422 is a pressurized fluid such as compressed dry air, for example. The valve 424 is individually opened and closed under the control of the control unit 150. When the valve 424 is opened, the pressurized fluid is ejected from the corresponding opening 426.

[0132] FIG. 26 is a diagram showing the layout of the openings 426 in the correction unit 603. The openings 426 are arranged over the entire holding surface of the substrate 213 in the substrate holder 223. Therefore, by opening any one of the valves 424, the pressurized fluid can be ejected downward in the drawing at an arbitrary position on the holding surface of the substrate holder 223.

[0133] The substrate holder 223 holds the substrate 213 by, for example, an electrostatic chuck. The electrostatic chuck can eliminate the adsorption force by cutting off the power supply, but there is a time lag until the substrate 213 held by residual charges or the like is released. Therefore, immediately after cutting off the power supply to the electrostatic chuck, the pressurized fluid is ejected from the openings 426 of the entire substrate holder 223, and the substrate 213 can be immediately released.

[0134] FIG. 27 is a schematic diagram showing the correction operation of the correction unit 603. In FIG. 27, as in FIG. 24, a part of the substrates 211 and 213 in the process of superposition is shown.

[0135] In the process of superposition, when the pressurized fluid 427 is ejected from above in the drawing by the correction unit 603 in the region near the boundary K where the shape of the substrate 213 is changing, the substrate 213 is pushed toward the other substrate 211 and the amount of shape change decreases. As a result, correction can be made to make the elongation amount of the substrate 213 smaller at the location where the pressurized fluid is sprayed.

[0136] In this way, by operating the correction unit 603, the elongation of the substrate 213 can be suppressed, so that the positional deviation due to the magnification difference between the substrates 211 and 213 can be corrected. In the correction unit 603, the opening 426 can individually inject pressurized fluid. Therefore, even when the distribution of the elongation amount of the substrate 213 to be corrected is non-uniform, correction can be performed with different correction amounts for each region of the substrate 213.

[0137] In the above example, the case where the correction unit 603 is provided on the upper stage 322 has been described. However, in the lamination unit 300 having a structure in which the substrate 211 held on the lower stage 332 is released and bonded to the substrate 213, the correction unit 603 may be provided on the lower stage 332 to correct the elongation amount of the lower substrate 211 in the figure. Further, the correction unit 603 may be provided on both the lower stage 332 and the upper stage 322 to perform correction on both substrates 211 and 213.

[0138] In addition to suppressing the magnification difference by the combination of the substrates 211 and 213 described with reference to FIG. 15, magnification correction using the substrate holder 221 having the curved holding surface 225 shown in FIG. 18, the correction unit 601 shown in FIG. 19, etc., the correction unit 602 shown in FIG. 23, and the correction unit 603 shown in FIG. 25, etc. may be used in combination.

[0139] In this case, when determining a combination of two substrates 211 and 213 that meets predetermined conditions, a combination is determined in which the amount of positional deviation between the two substrates 211 and 213 has a magnitude that can be corrected by the above-described correction means. That is, a combination of the substrates 211 and 213 is determined in which the difference between the amount of positional deviation between the substrates 211 and 213 and the threshold value of the amount of positional deviation, i.e., the required correction amount, is smaller than the maximum correction amount of the above-described correction means.

[0140] Thereby, since the positional deviation due to the strain difference that could not be eliminated when determining the second substrate 211 in accordance with the first substrate 213 based on the information regarding the curvature can be reduced, even when a combination in which the amount of positional deviation is equal to or less than the threshold value cannot be determined, the number of combinations can be increased by using the correction means.

[0141] Note that by changing the shape of the substrate holder 221 having the curved holding surface 225 with a correction mechanism including the actuator 412 or the like, the convex amount of the substrate holder 221 can be continuously changed, so that the correction amount by the substrate holder 221 can be adjusted. Further, with a correction mechanism using the temperature difference between the substrates 211 and 213, the adsorption force on the substrates 211 and 213, etc., the correction amount for warping, distortion, etc. of the substrates 211 and 213 can be adjusted. Thereby, the correction range can be expanded and the utilization efficiency of the substrate 210 can be further improved.

[0142] Also, when correcting the positional deviation between substrates by a correction mechanism based on information regarding the curvature of the substrates as in the above-described example, the information acquired by the acquisition unit may be information such as the correction method and correction amount when correcting distortion. Further, the information acquired by the acquisition unit may be information other than the correction amount for calculating the correction amount. Here, examples of the information other than the correction amount include the lot number of the substrate 210, the ID of the equipment used when processing the substrate 210 in the previous process, the history of the processing performed on the substrate 210 until lamination, the specifications of the substrate 210, and the like.

[0143] Also, when correcting the positional deviation using the above-described correction means according to the procedure shown in FIG. 17, in S204 of FIG. 14, whether the amount of positional deviation between the two substrates 211 and 213 calculated or estimated from the information regarding the curvature of the two substrates 211 and 213, or the difference between the amount of positional deviation and the threshold value of the amount of positional deviation, that is, the required correction amount, is equal to or less than the size that can be corrected by the above-described correction means may be set as a predetermined condition. When this condition is satisfied, correction is performed by the above-described correction means, and when the condition is not satisfied, a combination of substrates that satisfies the condition is determined according to the steps shown in FIG. 15.

[0144] In this way, by acquiring in advance information regarding the curvature of substrates 211 and 213 and inferring distortion or misalignment including the magnification after superposition, substrates 211 and 213 with good compatibility regarding lamination can be combined. As a result, a laminated substrate 230 in which misalignment due to magnification or the like is equal to or less than a threshold value can be efficiently manufactured. Further, even if there are differences such as magnification between the substrates 211 and 213 to be superposed, correction for suppressing the magnification difference can be efficiently executed, and the productivity and yield of the laminated substrate 230 with less misalignment can be improved.

[0145] Also, in the above-described embodiment, the difference between the magnification predicted from the information regarding the curvature of substrates 211 and 213, the magnification before bonding measured by global alignment or enhanced global alignment based on the alignment marks 218 on substrates 211 and 213, or the magnification after bonding is obtained. When the difference is larger than a predetermined threshold value, this difference may be reflected in the measurement and determination threshold values from the next time. Thereby, the alignment accuracy of substrates 211 and 213 can be further improved.

[0146] In this case, the control unit 150 may calculate and record the distortion state of substrates 211 and 213 from the position information of the alignment marks 218 as information regarding substrates 211 and 213 for each of substrates 211 and 213, or for each combination when the combination of substrates 211 and 213 to be superposed is determined.

[0147] Also, in the above-described embodiment, an example in which the suitability of the combination is determined based on the state of magnification distortion generated in substrates 211 and 213 is shown. Instead of this, or in addition to this, the suitability of the combination may be determined based on the state of orthogonal distortion generated in each of substrates 211 and 213. When orthogonal distortion has occurred in each of the two substrates 211 and 213, it is detected whether or not the amount of misalignment between the two substrates 211 and 213 becomes equal to or less than a threshold value by rotating one of the substrates. When it becomes equal to or less than the threshold value, it may be determined that it is an appropriate combination.

[0148] FIG. 28 is a flowchart for explaining another procedure of the countermeasure executed in step S205 (FIG. 14). First, the control unit 150 selects an arbitrary first substrate 213 from a group of substrates 210 that have collected information regarding curvature (step S501). However, the combination selected here is the substrate 213 taken out from the combinations that were determined not to satisfy the conditions in step S204 (FIG. 14).

[0149] Next, the control unit 150 acquires the information regarding the curvature measured in step S201 (FIG. 14) for the selected first substrate 213 (step S502). Thereby, the control unit 150 can calculate the magnification of the second substrate 211 that satisfies the predetermined conditions when combined with this first substrate 213. Therefore, the control unit 150 outputs information indicating the required specifications of the second substrate 211 to the manufacturing equipment of the substrates 211 and 213, and causes the second substrate 211 that can satisfy the conditions to be manufactured when combined with the selected first substrate 213 to form the laminated substrate 230 (step S503).

[0150] In this way, by manufacturing the second substrate 211 on the premise of combining it with the first substrate 213, a laminated substrate 230 that surely satisfies the conditions can be produced using the first substrate 213. In step S503, in addition to manufacturing the second substrate 211 to be combined with the first substrate 213, if there is a substrate 210 that has been stocked without finding a combination in another lot or another line and is suitable for the first substrate 213, it may be used.

[0151] Furthermore, when the substrate 210 to be combined cannot be determined, a substrate 210 having an appropriate magnification for combining with the substrate 210 may be produced.

[0152] For example, even if a second substrate 211 is manufactured later for an existing first substrate 213 such that the difference in the final magnification is equal to or less than a threshold value, the warpage amount of the substrate 211 for which the final magnification difference becomes equal to or less than the threshold value may be calculated backward, and information regarding the warpage of the first substrate 213 may be fed back to the film forming apparatus during the manufacturing process of the substrate 211 including film formation from the wafer manufacturing, so that the substrate 211 may be intentionally warped.

[0153] In this way, by preparing substrates with no magnification difference, the throughput of the overlay of the substrates 211 and 213 can be improved. In this case, the warpage amount at which the magnification difference between the two substrates 211 and 213 becomes zero may be set as a target value, and the error from the target value may be eliminated using the combination of the substrates 211 and 213 and the correction mechanism as described above.

[0154] Also, for the substrates manufactured as described above, after determining the second substrate 211 to be combined with the first substrate 213, a substrate with a magnification difference equal to or less than the threshold value may be manufactured for the remaining substrates. Thereby, the yield of the substrates 211 and 213 can be improved.

[0155] In addition, in the present embodiment, an example is shown in which it is determined whether the combination of the first substrate 213 and the second substrate 211 satisfies predetermined conditions for the laminated substrate 230. Instead, it may be determined individually whether each of the first substrate 213 and the second substrate 211 satisfies a predetermined condition. In this case, the predetermined condition is that the amount of strain predicted to occur during the bonding process from when the first substrate 213 and the second substrate 211 are loaded into the laminated substrate manufacturing apparatus 100 until the bonding is completed is equal to or less than half of the width dimension of the connection terminals provided on each of the first substrate 213 and the second substrate 211. Alternatively, the curved states of the first substrate 213 and the second substrate 211 when this condition is satisfied may be stored in advance, and it may be determined whether the measured curved state satisfies the condition.

[0156] As described above, the present invention has been explained using embodiments. However, the technical scope of the present invention is not limited to the scope described in the above embodiments. It is obvious to those skilled in the art that various changes or improvements can be made to the above embodiments. It is clear from the description of the claims that forms with such changes or improvements can also be included in the technical scope of the present invention.

[0157] In the claims, the specification, and the drawings, for the operations, procedures, steps, stages, and other processes in the apparatus, system, program, and method shown, the execution order of each process is not explicitly indicated as "earlier" or "preceding" etc. in particular, and it should be noted that it can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the specification, and the drawings, even if it is described using "first," "next," etc. for convenience, it does not mean that it is essential to implement in this order.

Explanation of Reference Numerals

[0158] 100 Laminated substrate manufacturing apparatus, 110 Housing, 120, 130 Substrate cassettes, 140 Conveying unit, 150 Control unit, 210, 211, 213 Substrates, 212 Scribe line, 214 Notch, 216 Circuit region, 218 Alignment mark, 220, 221, 222, 223 Substrate holders, 225 Holding surface, 426 Opening, 230 Laminated substrate, 300 Overlay unit, 310 Frame body, 312 Bottom plate, 316 Top plate, 322 Upper stage, 324, 334 Microscopes, 326, 336 Activation devices, 331 X-direction driving unit, 332 Lower stage, 333 Y-direction driving unit, 338 Lifting driving unit, 400 Holder stocker, 411 Base, 412 Actuator, 413 Suction part, 414 Support column, 415 Pump, 416, 424 Valves, 422 Pressure source, 427 Pressurized fluid, 432 Voltage source, 434 Switch, 436 Electrostatic chuck, 500 Pre-aligner, 601, 603, 602 Correction parts

Claims

1. Obtaining information indicating deformation in a direction intersecting the bonding surface of each of a plurality of substrates, wherein the information indicating the deformation includes information on the magnitude and direction of warpage of each of the plurality of substrates; Selecting two substrates to be bonded to each other from among the plurality of substrates based on the obtained information indicating the deformation; A substrate selection method including the above steps.

2. The substrate selection method according to claim 1, further including calculating at least one of the amount of deformation that occurs in at least one of the two substrates when the two substrates are bonded to each other, and the amount of displacement between the two substrates when the two substrates are bonded to each other.

3. Further including determining whether at least one of the calculated amount of deformation and the amount of displacement satisfies a predetermined condition, wherein the step of selecting includes selecting the two substrates when it is determined that the predetermined condition is satisfied. The substrate selection method according to claim 2.

4. The substrate selection method according to claim 3, wherein the predetermined condition is a condition that the amount of displacement between the two substrates when the two substrates are bonded to each other is equal to or less than a threshold value.

5. The substrate selection method according to claim 3, wherein the predetermined condition is a threshold value corresponding to the maximum amount of displacement at which electrical conduction is possible between the two substrates when the two substrates are bonded.

6. The substrate selection method according to claim 3, wherein the predetermined condition is a threshold value corresponding to the amount of displacement between the two substrates when structures provided on each of the two substrates come into contact with each other at least partially.

7. The substrate selection method according to any one of claims 1 to 6, wherein the information indicating the deformation includes displacement from the designed position of structures provided on each of the two substrates.

8. The substrate selection method according to any one of claims 1 to 7, wherein the information indicating the deformation includes information regarding curvature in which at least one of the two substrates is bent as a whole or partially.

9. The substrate selection method according to claim 8, wherein the curvature includes warpage or deflection in at least one of the two substrates.

10. The warpage according to claim 9 includes at least one of a global warpage in which at least one of the two substrates is bent with a uniform curvature throughout, and a local warpage in which a local curvature change occurs in part.

11. The step of obtaining the information indicating the deformation includes measuring the warpage and deflection of the two substrates by measuring the positions of the front or back surfaces of the two substrates while supporting the center in the plane direction of each of the two substrates and rotating them around the center. The substrate selection method according to any one of claims 1 to 10.

12. The step of obtaining the information indicating the deformation includes measuring the residual stress of the two substrates by Raman scattering in a state where the two substrates are adsorbed to substrate holders and flattened. The substrate selection method according to any one of claims 1 to 10.

13. The step of obtaining the information indicating the deformation includes estimating the magnitude and direction of the warpage occurring in the two substrates based on information regarding the structure and material of the structures provided on each of the two substrates. The substrate selection method according to any one of claims 1 to 12.

14. The step of obtaining the information indicating the deformation includes estimating the magnitude and direction of the warpage occurring in the two substrates based on information regarding the processing process performed on the two substrates during the process of forming the structures provided on each of the two substrates. The substrate selection method according to any one of claims 1 to 12.

15. The step of obtaining the information indicating the deformation includes estimating the magnitude and direction of the warpage occurring in the two substrates based on information regarding at least one of the film formation structure, film formation conditions, and thickness of the film formed on the surfaces of the two substrates. The substrate selection method according to any one of claims 1 to 14.

16. having a step of estimating the amount of misalignment when the second substrate is temporarily combined with the first substrate among the plurality of substrates, The step of selecting includes selecting, as the two substrates, a combination of the first substrate and the second substrate for which the estimated amount of misalignment falls within the allowable range. The substrate selection method according to any one of claims 1 to 15.

17. including a step of determining whether or not the amount of misalignment falls within the allowable range, When it is determined in the determination step that the amount of misalignment does not fall within the allowable range, another second substrate is selected from the plurality of substrates, In the estimation step, the amount of misalignment when the other second substrate is combined with the first substrate is estimated. The substrate selection method according to claim 16.

18. A step of obtaining information indicating deformation in a direction intersecting the bonding surface of each of a plurality of substrates, A step of estimating the amount of misalignment when a second substrate is temporarily combined with a first substrate among the plurality of substrates, Based on the obtained information indicating the deformation, selecting two substrates to be bonded to each other from among the plurality of substrates, and selecting, as the two substrates, a combination of the first substrate and the second substrate for which the estimated amount of misalignment falls within the allowable range; step, A substrate selection method including.

19. A method for manufacturing a laminated substrate, comprising a step of manufacturing a laminated substrate by bonding together the two substrates selected by the substrate selection method according to any one of claims 1 to 18.

20. An acquisition unit that acquires information indicating deformation in a direction intersecting the bonding surface of each of a plurality of substrates, wherein the information indicating the deformation includes information on the magnitude and direction of warpage of each of the plurality of substrates, the acquisition unit, A selection unit that selects two substrates to be bonded to each other from among the plurality of substrates based on the information indicating the deformation acquired by the acquisition unit A substrate selection device comprising.

21. The substrate selection device according to claim 20, further comprising a calculation unit that calculates at least one of the amount of deformation that occurs in at least one of the two substrates when the two substrates are bonded to each other and the amount of misalignment between the two substrates when the two substrates are bonded to each other.

22. A determination unit that determines whether or not at least one of the amount of deformation and the amount of misalignment calculated by the calculation unit satisfies a predetermined condition, The selection unit selects the two substrates based on the determination result of the determination unit. The substrate selection device according to claim 21.

23. The substrate selection device according to claim 22, wherein the predetermined condition is a condition that the amount of misalignment between the two substrates when the two substrates are bonded to each other is equal to or less than a threshold value.

24. The substrate selection device according to claim 22, wherein the predetermined condition is a threshold value corresponding to a maximum displacement amount that enables electrical conduction between the two substrates when the two substrates are bonded together.

25. The substrate selection device according to claim 22, wherein the predetermined condition is a threshold value corresponding to a displacement amount between the two substrates when the structures provided on each of the two substrates come into contact with each other at least partially.

26. The substrate selection device according to any one of claims 20 to 25, wherein the information indicating the deformation includes a displacement from the designed position of the structures provided on each of the two substrates.

27. The substrate selection device according to any one of claims 20 to 26, wherein the information indicating the deformation includes information regarding a curvature in which at least one of the two substrates is bent entirely or partially.

28. The substrate selection device according to claim 27, wherein the curvature includes warping or bending in at least one of the two substrates.

29. The substrate selection device according to claim 28, wherein the warping includes at least one of a global warping in which the whole of at least one of the two substrates bends with a uniform curvature and a local warping in which a local change in curvature occurs in a part.

30. The substrate selection device according to any one of claims 20 to 29, including a measurement unit that measures warping and bending of the two substrates by measuring the positions of the front or back surfaces of the two substrates while supporting the center in the plane direction of each of the two substrates and rotating them around the center.

31. The substrate selection device according to any one of claims 20 to 29, including a measurement unit that measures the residual stress of the two substrates by Raman scattering in a state where the two substrates are adsorbed to substrate holders and flattened.

32. The substrate selection device according to any one of claims 20 to 31, including an estimation unit that estimates the magnitude and direction of warping occurring in the two substrates based on information regarding the structure and material of the structures provided on each of the two substrates.

33. The substrate selection device according to any one of claims 20 to 32, including an estimation unit that estimates the magnitude and direction of warping occurring in the two substrates based on information regarding the processing process performed on the two substrates in the process of forming the structures provided on each of the two substrates.

34. A substrate selection device according to any one of claims 20 to 33, comprising an estimation unit that estimates the magnitude and direction of warpage occurring in the two substrates based on information regarding at least one of the film formation structure, film formation conditions, and thickness of the films formed on the surfaces of the two substrates.

35. having an estimation unit that estimates the amount of misalignment when the second substrate is temporarily combined with the first substrate among the plurality of substrates, The selection unit selects, as the two substrates, a combination of the first substrate and the second substrate for which the estimated amount of misalignment falls within an allowable range. A substrate selection device according to any one of claims 20 to 34.

36. having a determination unit that determines whether or not the amount of misalignment falls within the allowable range, When the determination unit determines that the amount of misalignment does not fall within the allowable range, the determination unit selects another second substrate from among the plurality of substrates, The estimation unit estimates the amount of misalignment when the other second substrate is combined with the first substrate. The substrate selection device according to claim 35.

37. A substrate selection device comprising: an acquisition unit that acquires information indicating deformation in a direction intersecting the bonding surface of each of the plurality of substrates; an estimation unit that estimates the amount of misalignment when the second substrate is temporarily combined with the first substrate among the plurality of substrates; a selection unit that selects, from among the plurality of substrates, two substrates to be bonded to each other based on the information indicating deformation acquired by the acquisition unit, and the selection unit selects, as the two substrates, a combination of the first substrate and the second substrate for which the estimated amount of misalignment falls within an allowable range;

38. A substrate selection device according to any one of claims 20 to 37; a bonding device that bonds the two substrates selected by the substrate selection device; A laminated substrate manufacturing system comprising:

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