Mounting table and substrate processing apparatus

Abstract

To enhance the cooling capacity of a mounting base.SOLUTION: A mounting base comprises a mounting part, an annular support part, a gas supply port, a supply passage, a gas exhaust port, and an exhaust passage. The mounting part has a mounting face on which a substrate is mounted. The annular support part is provided on the mounting face around an outer peripheral side of the substrate and supports the substrate. The gas supply port is formed on the mounting face and supplies a heat transfer gas to the space between the substrate and the mounting face. The supply passage is provided within the mounting part and supplies the heat transfer gas to the gas supply port. The gas exhaust port is formed on the mounting face and exhausts the heat transfer gas in the space. The exhaust passage is provided within the mounting part, and the heat transfer gas exhausted from the gas exhaust port flows in the exhaust passage. At least the gas supply port side of the supply passage is provided to be inclined with respect to the mounting face.SELECTED DRAWING: Figure 12

Description

Technical Field

[0001] The present disclosure relates to a mounting table and a substrate processing apparatus.

Background Art

[0002] Patent Document 1 discloses a mounting table configured to partition the space between a substrate placed with a band provided concentrically on the surface of an electrostatic check into concentric spaces and supply a cooling gas to each space.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for enhancing the cooling capacity of a mounting table.

Means for Solving the Problems

[0005] A mounting table according to an aspect of the present disclosure includes a mounting portion, an annular support portion, a gas supply port, a supply flow path, a gas exhaust port, and an exhaust flow path. The mounting portion has a mounting surface on which a substrate is mounted. The annular support portion is provided along the outer peripheral side of the substrate on the mounting surface and supports the substrate. The gas supply port is formed on the mounting surface and supplies a heat transfer gas to the space between the substrate and the mounting surface. The supply flow path is provided in the mounting portion and supplies the heat transfer gas to the gas supply port. The gas exhaust port is formed on the mounting surface and exhausts the heat transfer gas in the space. The exhaust flow path is provided in the mounting portion and the heat transfer gas exhausted from the gas exhaust port flows through it. The supply flow path is provided with at least the gas supply port side inclined with respect to the mounting surface.

Effects of the Invention

[0006] According to the present disclosure, the cooling capacity of the mounting table can be enhanced.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

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Figure 12

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[0008] Hereinafter, embodiments of the mounting table and the substrate processing apparatus disclosed in the present application will be described in detail with reference to the drawings. Note that the mounting table and the substrate processing apparatus disclosed are not limited by the present embodiment.

[0009] A substrate processing apparatus for performing substrate processing such as film formation and etching on a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer") is known. Some substrate processing apparatuses electrostatically adsorb a substrate on a mounting table. Such a mounting table is provided with, for example, an electrostatic chuck for electrostatically adsorbing a substrate. A heat transfer gas is supplied between the electrostatic chuck and the substrate.

[0010] By the way, in recent years, depending on the process, it has been desired to lower the temperature of the substrate. For example, in the HARC (High Aspect Ratio Contact) process for forming high aspect ratio holes, it is desired to lower the temperature of the substrate. The space between the conventional substrate and the electrostatic chuck is a sealed space and is only filled with a heat transfer gas. Therefore, the heat removal from the substrate is limited to the cooling capacity of the filled heat transfer gas.

[0011] Therefore, a technique for enhancing the cooling capacity of the mounting table is expected.

[0012] [Embodiment] [Device Configuration] An example of the substrate processing apparatus of the present disclosure will be described. In the embodiment, a case where the substrate processing apparatus of the present disclosure is a plasma processing system in a system configuration will be described as an example. FIG. 1 is a diagram showing an example of a schematic configuration of a plasma processing system according to the embodiment.

[0013] A configuration example of a plasma processing system will be described below. The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas discharge port for discharging gas from the plasma processing space. The side wall 10a is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the plasma processing chamber 10 housing.

[0014] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. In one embodiment, the main body portion 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has the substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Also, although not shown, the substrate support portion 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. Further, the substrate support portion 11 may include a heat transfer gas supply portion configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0015] For example, in the substrate support portion 11, a flow path 111c for flowing a temperature control medium therein is formed in the main body portion 111. The flow path 111c is formed over the entire surface of the substrate support surface 111a corresponding to the substrate support surface 111a on which the substrate W is placed. A temperature control medium such as a refrigerant or a heat medium flows through the flow path 111c. For example, the flow path 111c is connected to a chiller unit 114 via a pipe 113. The chiller unit 114 is capable of controlling the temperature of the supplied refrigerant. The plasma processing apparatus 1 is configured to be able to control the temperature of the substrate support portion 11 by circulating the refrigerant with controlled temperature from the chiller unit 114 through the flow path 111c.

[0016] Further, a gas supply port 111d for discharging heat transfer gas is formed on the substrate support surface 111a of the substrate support portion 11. A supply flow path 115 such as a pipe for supplying heat transfer gas is provided in the substrate support portion 11. The supply flow path 115 communicates with the gas supply port 111d. A gas supply portion 116 is connected to the supply flow path 115. The gas supply portion 116 supplies heat transfer gas such as He gas to the supply flow path 115. The heat transfer gas supplied through the supply flow path 115 is discharged from the gas supply port 111d and supplied to the space between the substrate W and the substrate support surface 111a.

[0017] Further, a gas exhaust port 111e is formed on the substrate support surface 111a of the substrate support portion 11. An exhaust flow path 117 such as a pipe for exhausting heat transfer gas is provided in the substrate support portion 11. The exhaust flow path 117 communicates with the gas exhaust port 111e. An exhaust system 40 is connected to the exhaust flow path 117. The heat transfer gas supplied to the space between the substrate W and the substrate support surface 111a flows into the gas exhaust port 111e and is exhausted to the exhaust system 40 through the exhaust flow path 117.

[0018] The shower head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. Further, the shower head 13 includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. In addition, the gas introduction portion may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a in addition to the shower head 13.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from the corresponding gas source 21 to the showerhead 13 via the corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply unit 20 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one processing gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member of the substrate support 11 and / or the conductive member of the showerhead 13. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Also, by supplying a bias RF signal to the conductive member of the substrate support 11, a bias potential is generated on the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to the conductive member of the substrate support portion 11 and / or the conductive member of the shower head 13 via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support portion 11 and / or the conductive member of the shower head 13. The second RF generation unit 31b is coupled to the conductive member of the substrate support portion 11 via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to the conductive member of the substrate support portion 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0022] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to the conductive member of the substrate support 11 and configured to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to other electrodes such as the electrodes in the electrostatic chuck. In one embodiment, the second DC generation unit 32b is connected to the conductive member of the shower head 13 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the shower head 13. In various embodiments, at least one of the first and second DC signals may be pulsed. Note that the first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0023] The exhaust system 40 may be connected to, for example, a gas outlet 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0024] The control unit 2 processes computer-executable instructions for causing the plasma processing apparatus 1 to execute various processes described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 so as to execute the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on a program stored in the storage unit 2a2. The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0025] Next, the configuration of the substrate support portion 11 according to the embodiment will be described. FIG. 2 is a diagram showing an example of a schematic configuration of the substrate support portion 11 according to the embodiment. FIG. 2 shows a plan view of the substrate support surface 111a on which the substrate W of the substrate support portion 11 is placed.

[0026] As shown in FIG. 2, the main body portion 111 of the substrate support portion 11 has a substrate support surface 111a for supporting the substrate W. The substrate W is placed on the substrate support surface 111a of the main body portion 111. In the embodiment, the substrate support portion 11 corresponds to the mounting table of the present disclosure. Also, the main body portion 111 corresponds to the mounting portion of the present disclosure.

[0027] An annular band 111f is provided along the outer peripheral side of the substrate W on the substrate support surface 111a. The band 111f supports the outer periphery of the substrate W placed on the substrate support surface 111a. Dots (not shown) for supporting the substrate W are formed on the substrate support surface 111a.

[0028] In addition, a gas supply port 111d and a gas exhaust port 111e are formed on the substrate support surface 111a. The gas supply ports 111d are formed at a plurality of positions concentrically on the substrate support surface 111a. In the example of FIG. 2, a plurality of gas supply ports 111d are formed at intervals on the circumferences of two concentric circles with different radii. The gas supply ports 111d are formed at larger intervals on the circumference of the outer concentric circle than on the circumference of the inner concentric circle. Each gas supply port 111d communicates with the supply flow path 115 respectively, and discharges the heat transfer gas supplied from the supply flow path 115. Note that the arrangement position of the gas supply port 111 shown in FIG. 2 is an example and is not limited thereto.

[0029] FIG. 3 is a diagram showing an example of a cross section of the substrate support portion 11 according to the embodiment taken along line A-A of FIG. 2. FIG. 3 shows a cross section of the gas supply port 111d portion taken along line A-A of FIG. 2. The main body portion 111 includes a base 120 and an electrostatic chuck 121. The base 120 includes a conductive member. For example, the base 120 is formed of a conductive metal such as aluminum. The electrostatic chuck 121 has, for example, an insulating layer such as ceramic and a film-shaped electrode provided in the insulating layer. The electrostatic chuck 121 generates an electrostatic attraction when a DC voltage is applied from a power source (not shown) to the electrode provided inside, and attracts and holds the substrate W. The electrostatic chuck 121 is adhered to the base 120 with an adhesive. An adhesive layer 122 is formed between the electrostatic chuck 121 and the base 120 by the adhesive.

[0030] By the band 111f provided on the substrate support surface 111a and dots (not shown) supporting the substrate W, a space 123 is formed between the substrate W and the substrate support surface 111a. The space 123 is a sealed space whose outer periphery is sealed by the band 111f contacting the outer periphery of the substrate W. The heat transfer gas is supplied to the space 123 from the gas supply port 111d.

[0031] The base 120 is provided with a sleeve 120a that forms a supply channel 115 at the position of each gas supply port 111d. Each gas supply port 111d communicates with the supply channel 115 respectively. Each supply channel 115 is provided with at least the side of the gas supply port 111d inclined with respect to the substrate support surface 111a. In the example of FIG. 2, the supply channel 115 is provided with the side of the gas supply port 111d inclined in one circumferential direction of the concentric circle of the gas supply port 111d with respect to the substrate support surface 111a. In the main body 111 according to the embodiment, the side of the gas supply port 111d of each supply channel 115 is provided inclined in the clockwise direction with respect to the substrate support surface 111a. Thereby, the heat transfer gas is discharged from each gas supply port 111d in the counterclockwise direction of the concentric circle. In FIG. 2, the direction of the heat transfer gas discharged from each gas supply port 111d is indicated by an arrow.

[0032] Also, as shown in FIG. 2, a plurality of gas exhaust ports 111e are formed concentrically on the substrate support surface 111a with a radius different from that of the concentric circle of the gas supply port 111d. In the example of FIG. 2, a gas exhaust port 111e is formed at the center position of the concentric circle. Also, a plurality of gas exhaust ports 111e are formed at intervals on the circumference of a concentric circle having a radius larger than the radius of the inner concentric circle of the gas supply port 111d and smaller than the radius of the outer concentric circle of the gas supply port 111d. Note that the arrangement position of the gas exhaust port 111e shown in FIG. 2 is an example and is not limited thereto.

[0033] FIG. 4 is a diagram showing an example of a cross section of the substrate support portion 11 according to the embodiment taken along the line B-B in FIG. 2. FIG. 4 shows a cross section of the gas exhaust port 111e portion taken along the line B-B in FIG. 2. The base 120 is provided with a sleeve 120b that forms an exhaust channel 117 at the position of each gas exhaust port 111e. Each gas exhaust port 111e communicates with the exhaust channel 117 respectively. In the present embodiment, the exhaust channel 117 is provided perpendicular to the substrate support surface 111a. Note that the exhaust channel 117 may be provided with at least the side of the gas supply port 111d inclined with respect to the substrate support surface 111a. The heat transfer gas supplied to the space 123 is exhausted from the gas exhaust port 111e.

[0034] Further, as shown in FIG. 2, on the substrate support surface 111a, a flow rectifying plate 111g is provided concentrically and at intervals between the concentric circles of the gas supply port 111d and the concentric circles of the gas exhaust port 111e. Note that the arrangement position of the flow rectifying plate 111g shown in FIG. 2 is an example and is not limited thereto.

[0035] FIG. 5 is a diagram showing an example of a cross section of the substrate support portion 11 according to the embodiment taken along line C-C of FIG. 2. FIG. 5 shows a cross section of the flow rectifying plate 111g portion taken along line C-C of FIG. 2. FIG. 5 shows dots 111h provided on the substrate support surface 111a. As described above, the substrate W is supported by the band 111f and the dots 111h provided on the substrate support surface 111a. A space 123 is formed between the substrate W and the substrate support surface 111a. A flow rectifying plate 111g is provided on the substrate support surface 111a. The flow rectifying plate 111g is formed lower than the dots 111h and a gap is provided without contact with the substrate W. Although there is a gap between the flow rectifying plate 111g and the substrate W, it divides the space 123. The direction of the heat transfer gas supplied to the space 123 is controlled by the flow rectifying plate 111g.

[0036] When the plasma processing apparatus 1 according to the embodiment performs plasma processing, the temperature of the substrate support portion 11 is controlled by circulating a refrigerant cooled from the chiller unit 114 through the pipe 113 and flowing it through the flow path 111c. Further, the plasma processing apparatus 1 supplies a heat transfer gas to the space 123 from the gas supply unit 116 through the supply flow path 115 and the gas supply port 111d, and exhausts the heat transfer gas in the space 123 from the gas exhaust port 111e and the exhaust flow path 117 to form a flow of the heat transfer gas in the space 123.

[0037] Here, conventionally, the space 123 between the substrate W and the substrate support surface 111a was a sealed space and was only filled with a heat transfer gas. FIG. 6 is a diagram schematically showing an example of the configuration of the conventional substrate support portion 11. In the conventional substrate support portion 11, the space 123 between the substrate W and the substrate support surface 111a was a sealed space, and the space 123 was only filled with a heat transfer gas through the supply flow path 115 and the gas supply port 111d. For this reason, the heat removal from the substrate W was only by the cooling due to the heat transfer of the filled heat transfer gas. During plasma processing, the heat transmitted from the plasma to the substrate W was transferred to the refrigerant in the flow path 111c through the heat transfer gas and the substrate support portion 11 and removed. During plasma processing, there are transient and steady states in the substrate W and the substrate support portion 11. The transient state is, for example, a state in which the amount of heat input to the substrate W and the substrate support portion 11 is more than the amount of heat output, and the temperatures of the substrate W and the substrate support portion 11 tend to increase with time. The steady state is a state in which the amount of heat input and the amount of heat output of the substrate W and the substrate support portion 11 are equal, the temperatures of the substrate W and the substrate support portion 11 do not tend to increase with time, and the temperature is substantially constant and stable. In the steady state, the amount of heat input from the plasma to the substrate W is equal to the amount of heat output transferred to the refrigerant and removed. For example, when the amount of heat that can be removed by circulating the refrigerant in the flow path 111c is 10 W, the plasma processing apparatus 1 can perform plasma processing with a power that results in an amount of heat input of 10 W to the substrate W. The plasma processing apparatus 1 has a greater amount of heat input to the substrate W as the power of the plasma is greater. For this reason, when the plasma processing apparatus 1 attempts to perform plasma processing with a greater power, it is necessary to enhance the cooling capacity.

[0038] Therefore, the plasma processing apparatus 1 according to the embodiment supplies a heat transfer gas from the gas supply unit 116 to the space 123, exhausts the heat transfer gas in the space 123, and forms a flow of the heat transfer gas in the space 123.

[0039] FIG. 7 is a diagram schematically showing an example of the configuration of the substrate support portion 11 according to the embodiment. In the space 123 between the substrate W and the substrate support surface 111a, the heat transfer gas flows from the supply channel 115 to the exhaust channel 117. During plasma processing, the heat transmitted from the plasma to the substrate W is transferred to the refrigerant in the channel 111c via the heat transfer gas and the substrate support portion 11, and the heat transfer gas to which the heat has been transferred is exhausted to the exhaust channel 117 and removed. The plasma processing apparatus 1 according to the embodiment has a higher cooling capacity because the heat transfer gas to which the heat has been transferred flows into the exhaust channel 117 and is exhausted. Thereby, the plasma processing apparatus 1 according to the embodiment can perform plasma processing with a larger power. For example, when the amount of heat that can be removed by circulating the refrigerant in the channel 111c is 10 W and the amount of heat that can be removed by flowing the heat transfer gas in the space 123 is 5 W, the plasma processing apparatus 1 can perform plasma processing with a power that results in a heat input of 15 W to the substrate W.

[0040] Cooling devices that cool refrigerants such as the chiller unit 114 tend to have a higher cooling capacity as their size increases. In the case of a conventional configuration, in order to increase the cooling capacity, it is necessary to increase the size of the cooling device, which increases the size of the plasma processing apparatus 1 and also increases the installation area. In a factory that manufactures semiconductor devices using the plasma processing apparatus 1, the area where the plasma processing apparatus 1 can be installed is limited. For this reason, in the factory, when the installation area of the plasma processing apparatus 1 increases, the number of plasma processing apparatuses 1 that can be installed decreases, and the production capacity decreases.

[0041] On the other hand, the plasma processing apparatus 1 according to the embodiment can increase the cooling capacity of the substrate support portion 11 without increasing the cooling capacity of the cooling device. Thereby, an increase in the installation area of the plasma processing apparatus 1 can be suppressed. Thereby, since a decrease in the number of plasma processing apparatuses 1 that can be installed in the factory can be suppressed, a decrease in the production capacity can be suppressed.

[0042] Further, as shown in FIG. 2, the substrate support portion 11 according to the embodiment forms a plurality of gas supply ports 111d concentrically at a plurality of positions on the substrate support surface 111a. Also, in the substrate support portion 11, the gas supply port 111d side of the supply flow path 115 communicating with each gas supply port 111d is inclined in the clockwise direction of the concentric circle of the gas supply port 111d. As a result, a counterclockwise flow of heat transfer gas is generated in the space 123. As shown in FIG. 2, the substrate support portion 11 has a plurality of gas exhaust ports 111e formed concentrically with a radius different from that of the concentric circle of the gas supply port 111d. The heat transfer gas discharged from the gas supply port 111d does not immediately flow out from the gas exhaust port 111e as it is, but circulates the heat transfer gas in the space 123. As a result, the heat transfer gas can be circulated in the space 123 for a long period of time, so that the cooling capacity of the substrate support surface 111a can be enhanced. Further, the substrate support surface 111a is provided with a rectifying plate 111g concentrically and at intervals between the concentric circle of the gas supply port 111d and the concentric circle of the gas exhaust port 111e. As a result, the heat transfer gas can be stably circulated in the space 123. Thereby, the entire substrate support surface 111a can be cooled by the heat transfer gas.

[0043] In the substrate support portion 11 according to the embodiment, the gas supply port 111d side of the supply flow path 115 is provided to be inclined with respect to the substrate support surface 111a. FIG. 8 is a diagram for explaining an example of the flow of the heat transfer gas in the vicinity of the gas supply port 111d of the substrate support portion 11 according to the embodiment. The heat transfer gas is discharged obliquely from the gas supply port 111d. As a result, a turbulent flow of the heat transfer gas can be generated in the space 123. Here, for example, when the flow of the heat transfer gas in the space 123 becomes laminar, a boundary layer with a slow flow is formed near the substrate W and the substrate support surface 111a in the space 123, and the heat propagation is suppressed. As a result, in the space 123, the heat transfer property of the heat transfer gas is reduced. As shown in FIG. 8, the substrate support portion 11 according to the embodiment can suppress the formation of a boundary layer in the space 123 by generating a turbulent flow of the heat transfer gas in the space 123. Thereby, a decrease in the heat transfer property of the heat transfer gas in the space 123 can be suppressed.

[0044] The exhaust gas flow path 117 may be provided perpendicular to the substrate support surface 111a, or at least the side of the gas supply port 111d may be provided inclined with respect to the substrate support surface 111a. In FIG. 4 described above, the exhaust gas flow path 117 communicating with the gas exhaust port 111e is provided perpendicular to the substrate support surface 111a. FIG. 9 is a diagram showing an example of the exhaust characteristics of the gas exhaust port 111e according to the embodiment. In the case of FIG. 4, as shown in FIG. 9, the gas exhaust port 111e sucks the heat transfer gas in the same manner over the entire circumference. Therefore, the gas exhaust port 111e has the same exhaust characteristics over the entire circumference. FIG. 10 is a diagram showing an example of a cross section of the substrate support portion 11 according to the embodiment. In FIG. 10, the exhaust gas flow path 117 communicating with the gas exhaust port 111e is provided inclined with respect to the substrate support surface 111a. The heat transfer gas flows more smoothly into the gas exhaust port 111e as the angle change when flowing into the gas exhaust port 111e is smaller. Therefore, the gas exhaust port 111e strongly sucks the heat transfer gas on the side opposite to the inclination. FIG. 11 is a diagram showing an example of the exhaust characteristics of the gas exhaust port 111e according to the embodiment. The gas exhaust port 111e communicates with the exhaust gas flow path 117 inclined to the right with respect to the substrate support surface 111a. Therefore, the gas exhaust port 111e shown in FIG. 11 strongly sucks the heat transfer gas on the left side, which is the side opposite to the inclination of the exhaust gas flow path 117.

[0045] Thus, the exhaust characteristics of the gas exhaust port 111e change depending on the direction in which the exhaust gas flow path 117 is provided. The position of the gas exhaust port 111e and the direction of the exhaust gas flow path 117 are designed according to how the heat transfer gas in the space 123 of the substrate support portion 11 is exhausted.

[0046] FIG. 12 is a diagram showing an example of the flow of the heat transfer gas in the space 123 of the substrate support portion 11 according to the embodiment. In FIG. 12, the exhaust flow path 117 of the gas supply port 111d is provided at an acute angle with respect to the substrate support surface 111a in the flow direction of the heat transfer gas in the space 123. In this case, the heat transfer gas can be smoothly flowed into the gas supply port 111d, and a large amount of the heat transfer gas can be exhausted. FIG. 13 is a diagram showing an example of the flow of the heat transfer gas in the space 123 of the substrate support portion 11 according to the embodiment. In FIG. 13, the exhaust flow path 117 of the gas supply port 111d is provided at an obtuse angle with respect to the substrate support surface 111a in the flow direction of the heat transfer gas in the space 123. In this case, while flowing the heat transfer gas, a part of the heat transfer gas can be inhaled. Further, a turbulent flow can be generated in the vicinity of the gas supply port 111d.

[0047] Incidentally, in the substrate support portion 11, hot spots where the temperature becomes high or cold spots where the temperature becomes low may occur on the substrate support surface 111a. In the substrate support portion 11, for example, positions where other members are provided, such as positions where lifter pins for raising and lowering the substrate W are provided, are likely to become hot spots or cold spots. Since the temperature at the corresponding positions on the placed substrate W changes from the surroundings, hot spots and cold spots are likely to become singular points.

[0048] Therefore, the substrate support portion 11 may be provided with a gas supply port 111d and a supply channel 115 such that the flow rate of the heat transfer gas increases with respect to the hot spot. Further, the substrate support portion 11 may be provided with a gas supply port 111d and a supply channel 115 such that the flow rate of the heat transfer gas decreases with respect to the cold spot. FIG. 14 is a diagram showing an example of the flow of the heat transfer gas on the substrate support surface 111a of the substrate support portion 11 according to the embodiment. Three hot spots HS are generated near the center of the substrate support surface 111a. FIG. 14 shows only some of the gas supply ports 111d and gas exhaust ports 111e provided on the substrate support surface 111a. In FIG. 14, a gas supply port 111d, a supply channel 115, a gas exhaust port 111e, and an exhaust channel 117 are provided such that three arc-shaped flows of the heat transfer gas passing through the hot spot HS are generated. The gas supply ports 111d are formed in a plurality on the substrate support surface 111a along the flow of the heat transfer gas so that a flow of the heat transfer gas is generated toward the hot spot HS. The supply channel 115 is provided to be inclined with respect to the substrate support surface 111a such that the heat transfer gas discharged from the communicating gas supply port 111d becomes a direction along the flow of the heat transfer gas. For example, in FIG. 14, the direction in which the heat transfer gas is discharged from the gas supply port 111d and the direction in which the heat transfer gas is strongly sucked into the gas exhaust port 111e are indicated by arrows, respectively. The gas supply ports 111d are formed side by side on the substrate support surface 111a along the arc-shaped flow of the heat transfer gas. The supply channel 115 is provided to be inclined with respect to the substrate support surface 111a such that the heat transfer gas discharged from the communicating gas supply port 111d becomes a direction along the arc-shaped flow of the heat transfer gas. The gas exhaust ports 111e are formed at the position of the hot spot HS and at the position where the hot spot HS has passed along the arc-shaped flow of the heat transfer gas. The exhaust channel 117 is provided to be inclined with respect to the substrate support surface 111a such that the direction of the arc-shaped flow strongly sucks the heat transfer gas. Thereby, the substrate support portion 11 shown in FIG. 14 allows a large amount of the heat transfer gas to flow with respect to the hot spot HS on the substrate support surface 111a, so that the hot spot HS can be strongly cooled.

[0049] Further, the substrate support portion 11 is provided with a gas supply port 111d and a supply channel 115 so that the flow of the heat transfer gas passes through areas other than the cold spots. For example, in FIG. 14, the portions other than the three arc-shaped heat transfer gas flows are separated from the heat transfer gas flow, and the flow rate of the heat transfer gas relatively decreases, resulting in a relatively low cooling capacity. Thus, these portions can be made into cold spots on the substrate support surface 111a. As a result, in the substrate support portion 11 shown in FIG. 14, the flow rate of the heat transfer gas with respect to the cold spots on the substrate support surface 111a decreases, so the cooling of the cold spots can be weakened.

[0050] Further, the substrate support portion 11 can also change the flow rate of the heat transfer gas by providing a flow rectifying plate 111g on the substrate support surface 111a. The substrate support portion 11 may be provided with a flow rectifying plate 111g such that the flow rate of the heat transfer gas increases with respect to the hot spots. Alternatively, the substrate support portion 11 may be provided with a flow rectifying plate 111g such that the flow rate of the heat transfer gas decreases with respect to the cold spots. FIG. 15 is a diagram showing another example of the flow of the heat transfer gas on the substrate support surface 111a of the substrate support portion 11 according to the embodiment. FIG. 15 shows only some of the gas supply ports 111d and the flow rectifying plates 111g provided on the substrate support surface 111a. In FIG. 15, the heat transfer gas is discharged from two gas supply ports 111d, and the flow rectifying plate 111g gradually narrows the width through which the heat transfer gas flows. In the portion where the width through which the heat transfer gas flows is narrow, the flow velocity of the heat transfer gas increases, and the cooling capacity becomes higher. On the other hand, in the portion where the width through which the heat transfer gas flows is wide, the flow velocity of the heat transfer gas decreases, and the cooling capacity becomes lower.

[0051] In this way, the substrate support portion 11 can partially change the cooling capacity of the substrate support surface 111a by means of the gas supply port 111d, the supply channel 115, the gas exhaust port 111e, the exhaust channel 117, and the flow rectifying plate 111g. The designer of the substrate support portion 11 designs the arrangement of the gas supply port 111d, the supply channel 115, the gas exhaust port 111e, the exhaust channel 117, and the flow rectifying plate 111g according to the desired distribution of the cooling capacity of the substrate support surface 111a.

[0052] Further, the substrate support portion 11 according to the embodiment changes the flow rate of the heat transfer gas in the space 123 by changing the supply amount of the heat transfer gas supplied from the gas supply portion 116 to the supply passage 115 or the exhaust amount from the exhaust passage 117 by the exhaust system 40. The substrate support portion 11 changes the cooling capacity by the heat transfer gas by changing the flow rate of the heat transfer gas in the space 123. The control unit 2 can change the cooling capacity by the heat transfer gas by controlling the gas supply portion 116 and the exhaust system 40. For example, when performing plasma processing with high power, the control unit 2 increases at least one of the supply amount of the heat transfer gas from the gas supply portion 116 to the supply passage 115 and the exhaust amount of the heat transfer gas from the exhaust passage 117 in the exhaust system 40, thereby increasing the cooling capacity. Further, the control unit 2 can also make the state where the space 123 is filled with the heat transfer gas as in the conventional case by controlling the exhaust system 40 to stop the exhaust of the heat transfer gas from the exhaust passage 117.

[0053] In addition, in the embodiment, a plasma processing system having a system configuration including the plasma processing apparatus 1 and the control unit 2 has been described as an example. However, the present invention is not limited to this. As described above, part or all of the control unit 2 may be included in the plasma processing apparatus 1. That is, the configuration including the plasma processing apparatus 1 and the control unit 2 of the embodiment may be regarded as the plasma processing apparatus 1.

[0054] As described above, the substrate support portion 11 (mounting table) according to the embodiment includes a main body portion 111 (mounting portion), a band 111f (support portion), a gas supply port 111d, a supply flow path 115, a gas exhaust port 111e, and an exhaust flow path 117. The substrate support portion 11 has a substrate support surface 111a (mounting surface) on which the substrate W is mounted. The band 111f is provided along the outer peripheral side of the substrate W on the substrate support surface 111a and supports the substrate W. The gas supply port 111d is formed on the substrate support surface 111a and supplies the heat transfer gas to the space 123 between the substrate W and the substrate support surface 111a. The supply flow path 115 is provided in the main body portion 111 and supplies the heat transfer gas to the gas supply port 111d. The gas exhaust port 111e is formed on the substrate support surface 111a and exhausts the heat transfer gas in the space 123. The exhaust flow path 117 is provided in the main body portion 111 and the heat transfer gas exhausted from the gas exhaust port 111e flows therethrough. Further, at least the gas supply port 111d side of the supply flow path 115 is provided to be inclined with respect to the substrate support surface 111a. Thereby, the cooling ability of the substrate support portion 11 can be enhanced.

[0055] Further, a plurality of gas supply ports 111d are formed at a plurality of positions concentrically on the substrate support surface 111a. The supply flow path 115 communicates with each of the plurality of gas supply ports 111d in the main body portion 111, and each gas supply port 111d side is provided to be inclined in one circumferential direction of the concentric circles with respect to the substrate support surface 111a. Thereby, the heat transfer gas can flow through the entire substrate support surface 111a, and the entire substrate support surface 111a can be cooled.

[0056] Further, a plurality of gas exhaust ports 111e are formed concentrically on the substrate support surface 111a at a radius different from the concentric circles of the gas supply ports 111d. The exhaust flow path 117 is provided in the main body portion 111 so as to communicate with each of the plurality of gas exhaust ports 111e. Thereby, since the heat transfer gas can be circulated in the space 123 for a long period of time, the cooling ability of the substrate support surface 111a can be enhanced.

[0057] Further, on the substrate support surface 111a of the main body 111, a flow rectifying plate 111g is provided in concentric circles with a gap therebetween between the concentric circle of the gas supply port 111d and the concentric circle of the gas exhaust port 111e. Thereby, the heat transfer gas can be stably circulated in the space 123. Thereby, the entire substrate support surface 111a can be cooled by the heat transfer gas.

[0058] Further, the main body 111 is provided with a gas supply port 111d, a supply flow path 115, and a flow rectifying plate 111g such that the flow rate of the heat transfer gas increases with respect to a hot spot where the temperature of the substrate support surface 111a becomes high, or the flow rate of the heat transfer gas decreases with respect to a cold spot where the temperature of the substrate support surface 111a becomes low. Thereby, it is possible to suppress the temperature from becoming non-uniform at the hot spots and cold spots on the substrate support surface 111a.

[0059] Further, a plurality of gas supply ports 111d are formed on the substrate support surface 111a along the flow of the heat transfer gas so that a flow of the heat transfer gas is generated toward the hot spot. The supply flow path 115 is provided to be inclined with respect to the substrate support surface 111a such that the heat transfer gas discharged from the communicating gas supply port 111d becomes in the direction along the flow of the heat transfer gas. Thereby, the cooling capacity of the hot spot can be strongly cooled.

[0060] Further, the gas supply port 111d and the supply flow path 115 are provided such that the flow of the heat transfer gas passes through other than the cold spot. Thereby, the cooling of the cold spot can be weakened.

[0061] The plasma processing apparatus 1 also includes a substrate support unit 11 (mounting table), a gas supply unit 116, a gas exhaust unit (exhaust system 40), and a control unit 2. The gas supply unit 116 is connected to the supply channel 115 of the substrate support unit 11 and supplies a heat transfer gas to the supply channel 115. The gas exhaust unit is connected to the exhaust channel 117 of the substrate support unit 11 and exhausts the heat transfer gas through the exhaust channel 117. The control unit 2 controls at least one of the supply amount of the heat transfer gas from the gas supply unit and the exhaust amount of the heat transfer gas by the gas exhaust unit. Thereby, the cooling capacity of the substrate support unit 11 can be enhanced without increasing the size of the plasma processing apparatus 1.

[0062] As described above, the embodiments have been explained. However, the embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. In fact, the above-described embodiments can be embodied in various forms. Also, the above-described embodiments may be omitted, substituted, or changed in various forms without departing from the scope and spirit of the claims.

[0063] For example, in the above embodiment, the case of performing plasma processing on a semiconductor wafer as the substrate W has been described as an example, but it is not limited thereto. The substrate W can be any one.

[0064] In addition, the substrate support unit 11 according to the present disclosure is applicable not only to capacitively coupled plasma (CCP) devices but also to other substrate processing devices. Examples of other substrate processing devices may include inductively coupled plasma (ICP) processing devices, plasma processing devices using a radial line slot antenna, helicon wave plasma (HWP) devices, electron cyclotron resonance plasma (ECR) devices, and the like. Further, the substrate support unit 11 according to the present disclosure may be used in various substrate processing devices such as film forming devices and heat treatment devices in addition to plasma processing devices.

[0065] It should be noted that the embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. In fact, the above-described embodiments can be embodied in various forms. Also, the above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and spirit of the appended claims.

Description of Reference Numerals

[0066] 1 Plasma processing apparatus 2 Control unit 11 Substrate support unit 40 Exhaust system 111 Main body 111a Substrate support surface 111b Annular region 111c Flow path 111d Gas supply port 111e Gas exhaust port 111f Band 111g Rectifying plate 111h Dot 114 Chiller unit 115 Supply flow path 116 Gas supply section 117 Exhaust flow path 123 Space W Substrate

Claims

1. A mounting portion having a mounting surface on which a substrate is mounted; An annular support portion provided along the outer peripheral side of the substrate on the mounting surface for supporting the substrate; A gas supply port formed on the mounting surface for supplying a heat transfer gas to a space between the substrate and the mounting surface; A supply flow path provided in the mounting portion for supplying the heat transfer gas to the gas supply port; A gas exhaust port formed on the mounting surface for exhausting the heat transfer gas in the space; An exhaust flow path provided in the mounting portion through which the heat transfer gas exhausted from the gas exhaust port flows; Comprising: The gas supply ports are formed at a plurality of positions concentrically on the mounting surface; The supply flow path communicates with each of the plurality of gas supply ports in the mounting portion, and each gas supply port side is provided to be inclined in one circumferential direction of the concentric circles with respect to the mounting surface; The gas exhaust ports are formed in a plurality of concentric circles on the mounting surface with a radius different from that of the concentric circles of the gas supply ports; The exhaust flow path is provided to communicate with each of the plurality of gas exhaust ports in the mounting portion; The mounting portion is provided with a flow rectifying plate concentrically and at intervals between the concentric circles of the gas supply ports and the concentric circles of the gas exhaust ports on the mounting surface; Mounting table.

2. A mounting portion having a mounting surface on which a substrate is mounted; An annular support portion provided along the outer peripheral side of the substrate on the mounting surface for supporting the substrate; A gas supply port formed on the mounting surface for supplying a heat transfer gas to a space between the substrate and the mounting surface; A supply flow path provided in the mounting portion for supplying the heat transfer gas to the gas supply port; A gas exhaust port formed on the mounting surface for exhausting the heat transfer gas in the space; An exhaust flow path provided in the mounting portion through which the heat transfer gas exhausted from the gas exhaust port flows; Comprising: At least the gas supply port side of the supply flow path is provided to be inclined with respect to the mounting surface; The mounting portion is provided with the gas supply port, the supply flow path and the flow rectifying plate such that the flow rate of the heat transfer gas increases with respect to a hot spot where the temperature of the mounting surface becomes high, or the flow rate of the heat transfer gas decreases with respect to a cold spot where the temperature of the mounting surface becomes low; Mounting table.

3. The gas supply ports are formed in a plurality on the mounting surface along the flow of the heat transfer gas so that the flow of the heat transfer gas is generated toward the hot spot. The supply flow path is provided to be inclined with respect to the mounting surface such that the heat transfer gas discharged from the communicating gas supply port flows in a direction along the flow of the heat transfer gas. The mounting table according to claim 2. **Claim 4** The gas supply port and the supply flow path are provided such that the flow of the heat transfer gas passes through areas other than the cold spot. The mounting table according to claim 2. **Claim 5** The mounting table according to any one of claims 1 to 4, a gas supply unit connected to the supply flow path of the mounting table and supplying heat transfer gas to the supply flow path, a gas exhaust unit connected to the exhaust flow path of the mounting table and exhausting heat transfer gas through the exhaust flow path, and a control unit that controls at least one of the supply amount of the heat transfer gas from the gas supply unit and the exhaust amount of the heat transfer gas by the gas exhaust unit. A substrate processing apparatus having the above components.

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