Method for adjusting components of a semiconductor processing chamber

Abstract

A method for manufacturing a component for use in a semiconductor processing chamber is provided. -6 A component body is formed from a conductive material having a conductivity of less than 1 / K. A metal oxide layer is then deposited over the surface of the component body.

Description

Background Art

[0001] [Cross - Reference to Related Applications] This application claims priority to U.S. Provisional Patent Application No. 62 / 978,610, filed on February 19, 2020, and incorporates the same herein by reference for all purposes.

[0002] The present disclosure generally relates to the manufacture of semiconductor devices. More particularly, the present disclosure relates to components of a semiconductor processing chamber and manufacturing / adjusting methods used when processing a substrate or wafer. In the process of processing a semiconductor wafer, a plasma processing chamber is used to process semiconductor devices. The plasma processing chamber is exposed to plasma, halogen, and / or oxygen, which may deteriorate the components within the plasma processing chamber. Some plasma processing chambers have silicon components such as electrodes, showerheads, and edge rings.

[0003] The background description provided herein is intended to present the overall context of the present disclosure. To the extent described in this background section, aspects of the current inventors' research and descriptions that may not be eligible as prior art at the time of filing are not to be regarded as prior art that explicitly or implicitly opposes the present disclosure.

Summary of the Invention

[0004] To achieve the above, in accordance with the objectives of the present disclosure, a method of manufacturing a component for use within a semiconductor processing chamber is provided. A component body is formed from a conductive material having a low coefficient of thermal expansion, for example, a coefficient of thermal expansion less than 10.0×10 -6 / K. Thereafter, a metal oxide layer is deposited over the surface of the component body.

[0005] In another aspect, a component for use within a plasma processing chamber is provided. The component has a component body. The component body has a low coefficient of thermal expansion (for example, a coefficient of thermal expansion less than 10.0×10 -6It includes a conductive material (less than / K). The metal oxide layer is deposited on the surface of the component body.

[0006] These features and other features of the present disclosure will be described in more detail in the following detailed description of the present disclosure in conjunction with the following figures.

Brief Description of the Drawings

[0007] The present disclosure is shown by way of example and not limitation in the figures of the accompanying drawings, in which like reference numerals generally refer to like elements.

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[0016] Next, the present disclosure will be described in detail with reference to some preferred embodiments of the present disclosure shown in the accompanying drawings. In the following description, many specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to those skilled in the art that the present disclosure may be practiced without some or all of these specific details. In other instances, well-known processing steps and / or structures have not been described in detail so as not to unnecessarily obscure the present disclosure.

[0017] In various embodiments described herein, components of a semiconductor processing chamber are provided that are resistant to damage due to arc discharge and / or erosion by processes such as plasma etching, and thus suppress or minimize the consumption of components that may result from plasma and etching processes associated with semiconductor processing systems such as plasma processing chambers.

[0018] For ease of understanding, FIG. 1 is a high-level flowchart of a process of manufacturing and using components of a semiconductor processing chamber, such as a plasma processing chamber. A component body is provided (step 104). The component body includes a conductive material having a low and linear coefficient of thermal expansion (CTE). In one embodiment, a "low CTE" material is defined as a material having a CTE of less than 10.0×10 -6 / K. In yet another embodiment, a "low CTE" material is defined as a material having a CTE of less than 5.0×10 -6 / K). As will be described in more detail below, the electrical conductivity and low CTE of the component body are particularly beneficial attributes for use in components of a semiconductor processing chamber, such as a plasma processing chamber. In one embodiment, the component body is formed by casting a conductive semiconductor or a low CTE metal, for example, by pouring or injecting molten semiconductor or metal into a mold to form the shape of the specified component. In embodiments where a conductive semiconductor material is cast, the molten semiconductor is cooled and hardened within the mold to form a polycrystalline structure with large grain size. In another embodiment, the component body is formed by sintering conductive semiconductor powder to form a conductive ceramic component. FIG. 2A is a schematic cross-sectional view of the component body 204. In this example, the component body 204 forms an edge ring. In this embodiment, the component body 204 is formed from a conductive semiconductor of silicon, silicon carbide, or graphite. Conductive silicon or silicon carbide is prepared by doping silicon or silicon carbide. In another embodiment, the component body 204 is formed from an electrically conductive low CTE metal such as titanium or molybdenum.

[0019] Deposit an aluminum barrier layer on the component body 204 (step 108). In this embodiment, electroplating is used to prepare an aluminum layer that is 99.9% pure in terms of mass conversion. In the electroplating process, a standard electrochemical cell is required in which the part to be plated is the cathode, the anode is ultra-high purity aluminum, and both components are immersed in the electrolyte. To prepare an aluminum barrier layer with a sufficiently high purity, a conductive organic-based solution rather than a water-based solution is desired. FIG. 2B is a schematic cross-sectional view of the component body 204 after depositing the aluminum barrier layer 208. In this example, the aluminum barrier layer 208 encloses the component body 204. In other embodiments, the aluminum barrier layer 208 may be on one surface of the component body 204.

[0020] Form a metal oxide layer by anodization (step 112). In this embodiment, the surface of the aluminum barrier layer 208 is hard anodized (also called hard coating or type III anodization), so the metal oxide layer is aluminum oxide (Al2O3). The hard anodization process forms a very hard and wear-resistant porous oxide on the surface of the aluminum barrier layer 208 with a high Al purity. The anodization setup is also a typical electrochemical cell, and the part coated with pure Al is the anode in an acid bath (usually sulfuric acid). When an electric current flows through the electrochemical cell, hydrogen is released at the cathode and oxygen is released at the surface of the aluminum anode, so the accumulation of aluminum oxide occurs. FIG. 2C is a cross-sectional view of the component body after hard anodizing the surface of the aluminum barrier layer 208 to form the metal oxide layer 212. Because of the high purity of the aluminum barrier layer 208, a high-purity metal oxide layer 212 can also be formed in the anodization process.

[0021] Attach the component body to a semiconductor processing chamber such as a plasma processing chamber (step 116). In this example, the component body is used as an edge ring. FIG. 3 is a schematic diagram of a plasma processing chamber 300 for processing a substrate, and in one embodiment, the component is installed. In some embodiments, the plasma processing chamber 300 includes a gas distribution plate 306 that provides a gas inlet and an electrostatic chuck (ESC) 316 within a plasma processing chamber 304 surrounded by a chamber wall 350. Within the plasma processing chamber 304, a substrate 307 is placed on the ESC 316. The ESC 316 may be supplied with a bias from an ESC power supply 348. A gas source 310 is connected to the plasma processing chamber 304 via the gas distribution plate 306. An ESC temperature controller 351 is connected to the ESC 316 to control the temperature of the ESC 316. A radio frequency (RF) power supply 330 supplies RF power to the ESC 316 and the upper electrode. In this embodiment, the upper electrode is the gas distribution plate 306. In a preferred embodiment, power supplies of 13.56 megahertz (MHz), 2 MHz, 60 MHz, and / or optionally 27 MHz serve as the RF power supply 330 and the ESC power supply 348. The RF power supply 330, the ESC power supply 348, an exhaust pump 320, and the gas source 310 are connected in a controllable manner to a controller 335. A high-flow liner 360 is a liner within the plasma processing chamber 304. The high-flow liner confines the gas from the gas source and has slots 362. The slots 362 maintain a controlled gas flow that passes from the gas source 310 to the exhaust pump 320. The edge ring 364 surrounds the substrate 307 and is mostly shielded from the plasma by a quartz ring 368. An example of such a plasma processing chamber is the Flex® etching system manufactured by Lam Research Corporation of Fremont, California. The processing chamber can be a CCP (capacitively coupled plasma) reactor or an ICP (inductively coupled plasma) reactor.

[0022] The plasma processing chamber 304 uses an edge ring 364 to plasma process the substrate 307 (step 120). The plasma processing may be one or more of etching, deposition, passivation, or another plasma process. The plasma processing may be performed in combination with a process other than plasma. Such a process may expose the edge ring 364 to a plasma-containing halogen and / or oxygen.

[0023] Edge rings are generally consumables in terms of their position and function within a semiconductor processing chamber. It is desirable for the upper surface of the edge ring to be at the same height as the upper surface of the substrate. Therefore, various mechanisms for moving the etching ring as the edge ring wears may be provided to keep the upper surface of the edge ring the same as the upper surface of the substrate. Moreover, if the edge ring wears out sufficiently, the edge ring must be replaced, causing downtime in the plasma processing chamber. In other embodiments, such components may be placed in a location shielded from the plasma. The edge ring ideally has a low coefficient of thermal expansion and excellent electrical and thermal conductivity.

[0024] In this embodiment, since the hard anodized metal oxide layer 212 has sufficient etching resistance against plasma erosion, the edge ring is no longer a consumable or is a minimal consumable, and thus does not need to be replaced frequently. The electroplating of aluminum to form the high-purity aluminum barrier layer 208 removes alloys or other impurities from the aluminum to be hard anodized. When the high-purity aluminum barrier layer 208 is oxidized, it becomes an aluminum oxide layer with even better etching resistance, preventing the generation of impurities during the plasma treatment process. Also, the electroplating of the aluminum barrier layer 208 forms a thin, uniform, and conformal aluminum layer. Hard anodizing may only slightly increase the thickness of the resulting hard anodized layer. As a result, no machining is required to smooth and / or thin the hard anodized layer to fit the edge ring within the plasma processing chamber 300. Also, the thin protective layer of the hard anodized layer is not overly affected by the problem of thermal expansion. The electroplating of the aluminum barrier layer 208 and the hard anodizing of the aluminum barrier layer 208 are relatively inexpensive processes that can result in the metal oxide layer 212. In this embodiment, the thickness of the aluminum barrier layer 208 deposited by electroplating is in the range of 1 micron to 100 microns. The metal oxide layer 212 formed by hard anodizing is highly pure and has a thickness of 5 microns to 100 microns. The high-purity metal oxide layer 212 has even better etching resistance than a low-purity metal oxide layer.

[0025] In various plasma processing chambers 300, other components having aluminum or a metal oxide layer or coating may be used. Such components include, among others, the ESC 316, Pinnacle (registered trademark), High Flow Liner 360, and gas distribution plate 306. Aluminum or metal oxide coatings are most useful for plasma processing chamber components that are consumed.

[0026] It is important for the dielectric coating to be complete in order to maintain both electrical isolation and chemical resistance. The thicker the dielectric coating, the more likely it is to crack. If the dielectric coating is too thin, it will not provide sufficient insulation to prevent damage caused by the voltage used in the plasma processing chamber 300.

[0027] In various embodiments, the surface of the aluminum barrier layer 208 may be anodized using plasma electrolytic oxidation (PEO) or type I, II, or III anodization to form the metal oxide layer 212. In other embodiments, the metal oxide layer 212 is spray-coated over the aluminum barrier layer 208. The spray coating may be a thermal spray coating or a plasma spray coating. Thermal spray / plasma spray is the best method for building thick coatings. In some embodiments, aerosol deposition may be used to apply a high-density coating. However, aerosol deposition may be more difficult for 3D shapes. Spray coatings may form thicker and non-uniform coatings. As a result, when using spray coatings, machining may be required to smooth the metal oxide layer 212. In some embodiments, a thicker metal oxide layer 212 may be desirable to achieve good conformity. If a thinner metal oxide layer 212 is desired, machining may be used to thin the metal oxide layer 212. In various embodiments, chemical vapor deposition or various spray processes or other deposition processes may be used to deposit the aluminum barrier layer 208. The thermal spray metal oxide coating process involves a heat source (flame or plasma) that melts the feedstock (in powder form) into tiny droplets and sprays them onto the substrate at high speed. In such a process, thick coatings can be deposited at a high deposition rate on complex shapes compared to other coating techniques.

[0028] In other embodiments, other metal oxides may be deposited on the aluminum barrier layer 208 by thermal spraying. Such other metal oxides include yttria (Y2O3), ternary yttria-alumina oxides (yttrium aluminum garnet (Y3Al5O12 (YAG)), yttrium aluminum monoclinic (Y4Al2O9 (YAM)), or yttrium aluminum perovskite (YAlO3 (YAP)), etc.), or YSZ (yttria-stabilized zirconia).

[0029] In another embodiment, instead of depositing the aluminum barrier layer 208 (step 108), a metal oxide layer is sprayed directly onto the surface of the component body 204. FIG. 4 is a schematic cross-sectional view of a component 400 showing a metal oxide layer 412 sprayed directly onto the component body 404. The thickness of the metal oxide layer 412 deposited by spraying may be in the range of 0.5 to 2 mm.

[0030] FIG. 5 shows an advanced flowchart of a second embodiment of a method for manufacturing and using components of a semiconductor processing chamber, such as a plasma processing chamber. Prepare a substrate body (step 504). Referring to FIGS. 6A - 6C, the prepared substrate body 604 may be formed into the shape of a component used in a plasma processing chamber, such as an edge ring having a central hole 608 that at least partially surrounds an electrostatic chuck (ESC). FIG. 6A is a top view of the substrate body, FIG. 6B is a cross-sectional view of the substrate body, and FIG. 6C shows an enlarged view of cross-section A - A of the surface 612 of the substrate body. It is understood that the images shown in FIGS. 6A - 8 are for illustrative purposes only and may differ in scale, shape, and feature parts. The substrate body 604 may be formed through many different manufacturing processes, such as machining, forming, sintering, polishing, chemical etching, etc.

[0031] According to one embodiment, the substrate body 604 has a low coefficient of thermal expansion (e.g., 10.0×10 -6less than / K). In yet another embodiment, the substrate body 604 includes an electrically conductive semiconductor, and in particular an electrically conductive polycrystalline doped silicon or silicon carbide semiconductor material. In an alternative embodiment, the substrate body may include other conductive semiconductors (such as germanium, graphite, etc.) or other low CTE metals such as titanium, molybdenum. In various embodiments, the semiconductor may be polycrystalline. Polycrystalline silicon has particles that are on average 1 larger than the particles of polycrystalline silicon. The average particle size of polycrystalline silicon exceeds 1 mm. A low coefficient of thermal expansion generally results in less stress, wear, and better compatibility between components. Especially during the processing in the chamber, the edge ring and other adjacent parts (especially the ESC base plate) have different temperatures. Due to the heating caused by the plasma, the edge ring is generally much hotter (in the range of 150 °C to 250 °C) than the ESC base plate whose temperature is actively controlled (in the range of -40 °C to 50 °C). Selecting an edge ring material with a small coefficient of thermal expansion effectively reduces the variation in the gap size between the edge ring and the adjacent part (ESC), so that a more consistent capacitance can be achieved between the two conductors. As a result, more electrically consistent performance is obtained.

[0032] Referring to FIGS. 5 and 6D, after preparing the substrate body 604, a high-purity aluminum layer 616 (FIG. 6D) is formed on the surface 612 of the substrate body 604 (step 508). According to some embodiments, the aluminum layer 616 is deposited using an electroplating deposition method, in which a substantially uniform and defect-free aluminum layer 616 with high purity of aluminum and high bonding strength with the underlying substrate body 604 is prepared. In alternative embodiments, deposition methods such as atomic layer deposition (ALD) or plasma electrolytic oxidation (PEO) may be used. In one embodiment, the silicon substrate is treated to remove or substantially remove oxides (such as silicon oxide) and surface damage generated during the manufacturing process from the surface before aluminum deposition. This is to ensure good adhesion between the aluminum layer 616 and the substrate BodyAn electroplating process may also be performed to ensure that there are no or very few oxides, oxidations, or free particles between 604.

[0033] Aluminum layer 616 helps to form an anodized layer 624 that is more uniform, has minimal porosity, and has fewer trace contaminants compared to anodizing an aluminum alloy (such as Al6061) (described below). The combined aluminum layer 616 / Anodized layer 624 serves as a corrosion barrier against a harsh plasma environment and also provides protection by isolating the voltage from a high-voltage plasma environment. According to one embodiment, aluminum layer 616 is at least 99% pure aluminum by mass. According to another embodiment, aluminum layer 616 is at least 99.5% pure aluminum by mass. According to yet another embodiment, aluminum layer 616 is at least 99.9% pure aluminum by mass. In one embodiment, electroplating step 508 is performed by the AlumiPlate process (AlumiPlate, Coon Rapids, Minnesota), and the purity of the electroplated aluminum layer 616 contains more than 99.99% pure aluminum by mass.

[0034] The thickness of aluminum layer 616 may vary depending on one or more factors including the type of component, the location of the component, the shape of the component, the properties of the substrate material, cost, etc. According to one embodiment, the thickness of aluminum layer 616 is about 20 micrometers (μm) to 150 μm. In another embodiment, the thickness of aluminum layer 616 is about 25 μm to 125 μm. According to another embodiment, the thickness of aluminum layer 616 is about 25 μm to 50 μm. In yet another embodiment, the thickness of aluminum layer 616 is about 25 μm to 35 μm.

[0035] Referring to FIGS. 5 and 6E, after the aluminum layer 616 is formed, the surface 620 of the aluminum layer 616 is anodized (step 512) to form a plasma processing component 600 having an anodic oxidation layer 624. FIG. 6E shows a cross-sectional view of an embodiment of a portion of the silicon substrate 604 after anodization. As shown in FIG. 6E, at least a part of the aluminum layer 616 remains between the anodic oxidation layer 624 and the substrate 604, and a part of the aluminum layer 616 is penetrated to generate the anodic oxidation layer 624. Since the depth of the additional layer of the anodic oxidation layer 624 is added on top of the original surface 620 of the aluminum layer 616, the overall thickness of the component increases. In one embodiment, the depth of the anodic oxidation layer 624 penetrates approximately 50% below the surface 620 and an additional 50% is deposited on top of the surface 620. It is desirable to leave at least a part of the aluminum layer 616 as it is (i.e., not anodized). This is because it provides a significant advantage in joining the boundary between the anodic oxidation layer 624 and the substrate 604. Since the anodic oxidation layer 624 and the silicon substrate body 604 are relatively hard surfaces, the flexible and malleable aluminum layer acts as a buffer to relieve the thermal stress applied to the layer during the plasma etching process in the chamber. If the thermal stress is not relieved, the anodic oxidation layer may separate from the silicon substrate body 604 when subjected to temperature changes. In various embodiments, the aluminum layer 616 prevents separation when the anodic oxidation layer 624 and the silicon substrate body 604 are subjected to several extreme thermal cycles. Also, the formation of silicon oxide causes thermal cracking at the boundary between the silicon substrate body 604 and the anodic oxidation layer 624. The thermal crack creates an exposed portion on the silicon substrate body 604. The exposed portion of the silicon substrate body 604 is eroded.

[0036] In one embodiment, anodization step 512 includes a hard coating or a type III anodization process (also referred to as hard anodization or hard coating anodization), and the aluminum-plated silicon substrate 604 is exposed to a sulfuric acid bath at a temperature of 0 °C to 3 °C and a high voltage (starting from a direct current of 25 V and increasing to 60 - 100 V as the process progresses) to create an oxide or "anodized" layer. In the type III anodization process, an anodized layer 624 with a thickness of up to about 50 μm or greater was created. In this embodiment, no water sealing or other hot water means or precipitation means are performed after anodization. This is because such sealing has a high potential for cracking or deterioration from the plasma process. In the anodization process, a spaced column is created. This space allows the column to expand without cracking. Since sealing eliminates or reduces the space, when the column expands due to heating by heat, the anodized layer is likely to crack. Cracks reduce the protection provided by the layer. Since sealing may form boehmite, the surface wear resistance may be reduced. Also, other anodization processes such as type II or mixed acid or oxalic acid can be used to convert the Al plating into an anodized protective layer.

[0037] In some embodiments, the anodized layer 614 has a thickness of at least 10 μm and can be made 50 μm or more thick. In other embodiments, the thickness of the anodized layer 614 is in the range of 5 μm to 50 μm. In other embodiments, the thickness of the anodized layer 614 is in the range of 12 μm to 38 μm. In yet another embodiment, the thickness of the anodized layer 614 is in the range of 25 μm to 35 μm. In various embodiments, the thickness of the non-anodized aluminum layer 616 portion is in the range of 7 μm to 113 μm. In various embodiments, the thickness of the non-anodized aluminum layer 616 portion is in the range of 12 μm to 32 μm.

[0038] According to one embodiment, the anodized layer 624 is an aluminum oxide layer with a purity of at least 99% by mass of aluminum oxide. According to another embodiment, the anodized oxide layer 614 is an aluminum oxide layer with a purity of at least 99.5% by mass of aluminum oxide. According to still another embodiment, the anodized layer 624 is an aluminum oxide layer with a purity of at least 99.9% by mass of aluminum oxide.

[0039] The aluminum / Anodization layers 616 / 624, as detailed above, minimize contaminants (e.g., a zinc content of 5 ppm compared to a typical 180 ppm found in 6061 aluminum alloy) and have improved corrosion resistance (the resistance tested in a hydrochloric acid (HCl) bubble test was 140 hours long compared to 5 - 13 hours for 6061 aluminum anodized with either mixed acid or oxalic acid). Further, for the aluminum / Anodization layer 6 16 / 6 24, a high dielectric breakdown voltage of 2500 V per 0.001 inch was measured.

[0040] After appropriately processing the component 600 through the steps 504 - 512 of FIG. 5, it is placed in a semiconductor processing chamber such as a plasma processing chamber (step 516 of FIG. 5). The manufacturing process shown in FIG. 5 is particularly useful for manufacturing consumable dielectric plasma processing chamber components. More specifically, the component 600 formed from the processes shown in FIGS. 5 and 6A - 6E forms and / or conditions one or more components of a plasma processing chamber to suppress or minimize component consumption via plasma, reactive halogen species, or other energetic ions and etching processes specific to the plasma processing chamber.

[0041] In the following embodiments, the component 600 formed from the processes shown in FIGS. 5 and 6A - 6E is targeted for a specific use as an edge ring or similar component within an electrostatic chuck (ESC) assembly or system (e.g., the ESC assembly 700 of FIG. 7) for use in a plasma processing chamber (e.g., the plasma processing chamber 804 shown in FIG. 8). However, it is understood that the component 600 formed from the processes shown in FIGS. 5 and 6A - 6E may be implemented as any number of components such as pinnacles and electrostatic chucks (ESCs) within the ESC assembly 700 or the plasma processing chamber 804, in addition to, among other parts, high - flow liners, gas distribution plates, etc., to the extent that properties such as high corrosion resistance, excellent electrical conductivity, and low coefficient of thermal expansion are desired.

[0042] FIG. 7 shows a cross - sectional view of a portion (defined by cross - section B - B shown in FIG. 8) of an ESC assembly 700 having a movable edge - ring configuration for use in a plasma processing system. The ESC assembly 700 includes an upper edge ring 724 configured to surround an electrostatic chuck (ESC) 704. The ESC 704, which may also be referred to as a substrate support, functions as a support for processing a wafer 866 during a processing operation. The upper edge ring 724 has an annular lower recess 726 supported by a movable edge ring 708. The movable edge ring 708 is arranged to move vertically in a cavity defined by a radially inner side having the ESC 704, a heating plate 752, and an intermediate inner edge ring 728, and a radially outer side having a stationary edge ring 716, an outer edge ring 712, and a cover edge ring 720. The cover edge ring 720 has a radially inner protrusion 722 that partially covers the upper edge ring 724.

[0043] The upper edge ring 724 is necessarily worn because it is exposed to erosive plasma and etchant when processing the processing wafer 866, and thus its thickness decreases in height as the exposure increases. Therefore, the movable edge ring 708 is used to lift the upper edge ring 724 to restore the height relationship between the upper surface of the upper edge ring 724 and the processing wafer / substrate 866. To affect such height adjustment, one or more lift pins 740 operate vertically (through the opening 748 of the ESC 704 and the opening 718 of the stationary edge ring 716) to push up the movable edge ring 708, and then the movable edge ring adjusts the vertical orientation of the upper edge ring 724. A sleeve 744 is disposed along the periphery of the lift pin 740 to seal the opening 748 of the ESC 704.

[0044] According to one embodiment, the component 600 is manufactured according to the processes of FIGS. 5 and 6A-6E to form a movable edge ring 708 for attachment to the ESC assembly 700. The location of the movable edge ring is near the plasma and exposed to the plasma when processing the processing wafer 866 within the chamber (i.e., having one or more "plasma-facing surfaces"), so the movable edge ring 708 greatly benefits from the corrosion-resistant properties of 616 / 624 of the component 600. Aluminum / anodized layer In one example, the plasma may move from between the upper edge ring 724, the outer edge ring 712, and the cover edge ring 720 to the outer surface of the movable edge ring 708 and the inner surface of the stationary edge ring 716. The amount of plasma that moves varies depending on the position of the upper edge ring 724. Also, at the position shown in FIG. 8, the upper edge ring 724 may prevent the plasma from moving from between the upper edge ring 724 and the intermediate inner edge ring 728 to the inner surface of the movable edge ring 708. When the movable edge ring 708 lifts the upper edge ring 724, a gap is created between the upper edge ring 724 and the intermediate inner edge ring 728, allowing the plasma to reach the inner surface of the movable edge ring 708.

[0045] In one embodiment, the entire outer surface of the movable edge ring 708 may be processed to include Aluminum / anodized layer 616 / 624 as provided in component 600. However, it is understood that only a portion of the outer surface of the component may need to be processed. For example, the outer surface or the radially outer surface of the movable edge ring 708 may be excluded from aluminum plating and / or anodization (e.g., by processing using a mask or the like), whereby only the plasma-facing surface (e.g., Aluminum / anodized layer refer to 608, FIG. 6B) has Central hole 616 / 624. In such partial coating processes, masking portions that are not coated may be required. The plasma-facing surface is the surface that is exposed to the plasma during the plasma processing or exposed to reactive halogen species at high temperature and low pressure. The reactive halogen species may be formed from remote plasma or thermal reactive fluorine. In some embodiments, the contacts on the movable edge ring 708 are not coated. This is because such contacts may be used to connect to the electrodes during the electroplating process. Aluminum / anodized layer Furthermore, the movable edge ring 708, together with the stationary edge ring 716, forms an RF conduction (alternating current) path to the ESC 704, achieving a more uniform plasma during the processing in the chamber, improving the uniformity of the proximal wafer processing, and thereby benefiting from the electrical conductivity of the substrate body 604 of the component 600. Therefore, the stationary edge ring 716 and the upper edge ring 724 may be formed of the aluminum electroplating and anodization layers 616 / 624 of the component 600 using the processes shown in FIGS. 5 and 6A - 6E, particularly among the other components of the ESC assembly 700 and the plasma processing chamber system 800.

[0046] Referring back to the process disclosed in FIG. 5, the component 600 is used in a plasma processing chamber (step 520) to facilitate semiconductor manufacturing on the processing wafer 866. The plasma processing may be one or more of etching, deposition, passivation, or another plasma processing. The plasma processing may be performed in combination with processes other than plasma.

[0047] ​

[0048] For ease of understanding, FIG. 8 schematically shows an example of a plasma processing chamber system 800 that may be used in one embodiment. The plasma processing chamber system 800 includes a plasma reactor 802 having a plasma processing chamber 804 therein. A plasma power supply 806 adjusted by a power matching network 808 supplies power to a transformer-coupled plasma (TCP) coil 810 located near a dielectric and inductive power window 812 by supplying inductive coupling power, to generate a plasma 814 within the plasma processing chamber 804. A pinnacle 872 extends from a chamber wall 876 of the plasma processing chamber 804 to the dielectric and inductive power window 812, forming a pinnacle ring. The pinnacle 872 is angled with respect to the chamber wall 876 and the dielectric and inductive power window 812. For example, the interior angles between the pinnacle 872 and the chamber wall 876, and between the pinnacle 872 and the dielectric and inductive power window 812, may each be greater than 90° and less than 180°. As shown, the pinnacle 872 forms an angled ring near the top of the plasma processing chamber 804. The TCP coil (upper power supply) 810 may be configured to create a profile that is uniformly distributed within the plasma processing chamber 804. For example, the TCP coil 810 may be configured to create a toroidal power distribution in the plasma 814. The dielectric and inductive power window 812 is provided to allow energy to flow from the TCP coil 810 to the plasma processing chamber 804 while separating the TCP coil 810 from the plasma processing chamber 804. A wafer bias voltage power supply 816 adjusted by a bias matching network 818 supplies power to the ESC assembly 700 to set a bias voltage when a processing wafer 866 is placed on the ESC assembly 700. A controller 824 controls the plasma power supply 806 and the wafer bias voltage power supply 816.

[0049] The plasma power supply 806 and the wafer bias voltage power supply 816 may be configured to operate at a specific radio frequency, such as, for example, 13.56 megahertz (MHz), 27 MHz, 2 MHz, 60 MHz, 400 kilohertz (kHz), 2.54 gigahertz (GHz), or a combination thereof. The plasma power supply 806 and the wafer bias voltage power supply 816 may be appropriately sized to supply a range of power to achieve the desired processing performance. For example, in one embodiment, the plasma power supply 806 may supply power in the range of 50 to 5000 watts, and the wafer bias voltage power supply 816 may supply a bias voltage in the range of 20 to 3000 volts (V). Also, the TCP coil 810 and / or the ESC assembly 700 may be composed of two or more sub-coils or sub-electrodes. The sub-coils or sub-electrodes may be powered by a single power supply or by a plurality of power supplies.

[0050] As shown in FIG. 8, the plasma processing chamber system 800 further includes a gas source / gas supply mechanism 830. The gas source 830 is in fluid connection with the plasma processing chamber 804 through a gas inlet such as a gas injector 840. The gas injector 840 has at least one borehole 841 such that gas flows through the gas injector 840 into the plasma processing chamber 804. The gas injector 840 may be located at any advantageous location in the plasma processing chamber 804 and may be in any form for injecting gas. However, it is preferred that the gas inlet may be configured to provide an "adjustable" gas injection profile. The adjustable gas injection profile enables independent adjustment of the flow of each gas to multiple regions of the plasma processing chamber 804. More preferably, the gas injector is attached to the dielectric and inductive power window 812. The gas injector may be attached to the outside of the power window, attached inside the power window, or form part of the power window. The process gas and by-products are removed from the plasma processing chamber 804 via a pressure control valve 842 and a pump 844. The pressure control valve 842 and the pump 844 also serve to maintain a specific pressure inside the plasma processing chamber 804. The pressure control valve 842 can maintain the pressure below 1 torr during processing. One or more edge rings may be installed around the upper part of the ESC assembly 700. The gas source / gas supply mechanism 830 is controlled by a controller 8 24. One embodiment may be implemented using Kiyo (registered trademark), Strata (registered trademark), or Vector (registered trademark) by Lam Research Corporation (registered trademark) of Fremont, California.

[0051] FIG 8 As shown in, the processing wafer 866 is in the plasma processing chamber 8It is disposed within 04, particularly above or within the ESC assembly 700. Plasma treatment is applied to the processing wafer 866 (e.g., step 120 in FIG. 1). In this example, the plasma treatment of the processing wafer 866 is used to etch a part of the stack on the processing wafer 866, such as for etching the tungsten-containing layer of the stack. In this embodiment, in the plasma treatment, heating is performed up to a temperature exceeding 550°C. Also, in the plasma treatment, residues are deposited inside the plasma treatment chamber 804. After the processing wafer 866 is plasma-treated, the processing wafer 866 is removed from the plasma treatment chamber 804. The plasma treatment chamber 804 is cleaned to remove the deposited residues. In this embodiment, the inside of the plasma treatment chamber 804 is cleaned using reactive fluorine from a remote fluorine plasma. A pressure within the range of 1 millitorr (mTorr) to 10 torr is applied. The ESC assembly 700 is not sufficiently cooled and remains at a temperature exceeding 500°C. After the cleaning is completed, a new processing wafer 866 may be placed in the plasma treatment chamber 804 to start a new cycle. In another example, etching including a carbon layer, a polysilicon layer, or an oxide / nitride layer is performed using plasma treatment. In such an example, after the wafer is treated with in-situ O2 and NF3 plasmas, the temperature of the wafer is controlled within the range of 0°C to 150°C, and the chamber is cleaned.

[0052] In various embodiments, the aluminum electroplating and anodized layer 616 / 624 and the features of component 600 may be implemented on various components of plasma processing chamber 804, such as a confinement ring, an edge ring, an electrostatic chuck, a ground ring, a chamber liner, a door liner, a pinnacle, a showerhead, a dielectric power window, a gas injector, an edge ring, a ceramic transfer arm, or other components. For example, the aluminum electroplating and anodized layer may be formed on upper edge ring 724. Component 600 and ESC assembly 700 are shown in the embodiment of FIG. 8 with respect to use in an inductively coupled plasma (ICP) reactor of plasma processing chamber system 800, but it is understood that other components and / or other types of plasma processing chambers may be used. Examples of other types of plasma processing chambers in which component 600 may be used are processing chambers such as capacitively coupled plasma processing chambers (CCP), bevel plasma processing chambers. In another example, the plasma processing chamber may be a dielectric processing chamber or a conductor processing chamber. An example of such a plasma processing chamber is the Exelan Flex® etching system manufactured by Lam Research Corporation® of Fremont, California.

[0053] Unlike metal alloys, substantially pure aluminum that is anodized (at least 99% pure aluminum in mass conversion) reduces the inherent contamination risk. The substantially pure aluminum results in no defects and voids in the subsequent anodization of aluminum oxide layer 614. The high-purity aluminum material also provides the additional advantage of significantly reducing contamination of the plasma etching chamber within the substrate or anodized layer. This superior structure improves performance against corrosion, dielectric, and wear compared to a stand-alone standard acidic anodization for metal matrix composites.

[0054] While the present disclosure has been described with respect to several preferred embodiments, there are changes, substitutions, modifications, and various alternative equivalents that fall within the scope of the present disclosure. It should also be noted that there are many alternative ways to implement the methods and apparatuses of the present disclosure. Therefore, the following appended claims are intended to be construed to include any changes, substitutions, and various alternative equivalents that fall within the true spirit and scope of the present disclosure. The present disclosure includes the following application examples. [Application Example 1] A method for manufacturing a component to be used in a semiconductor processing chamber, comprising:[ forming a component body from a conductive material having a coefficient of thermal expansion of less than 10.0×10 -6 / K, and depositing a coating of a metal oxide on the component body. A method. [Application Example 2] The method according to Application Example 1, wherein depositing the coating of the metal oxide includes confining the component body with the coating of the metal oxide. [Application Example 3] The method according to Application Example 1, wherein depositing the coating of the metal oxide includes depositing an aluminum barrier layer, and anodizing the aluminum barrier layer to form a coating of aluminum oxide. A method. [Application Example 4] The method according to Application Example 3, wherein depositing the aluminum barrier layer is by electroplating. [Application Example 5] The method according to Application Example 1, wherein the component body includes an electrically conductive semiconductor, a molybdenum or titanium object, and depositing the coating of the metal oxide includes electroplating a layer of aluminum having a specific thickness on the surface of the component body, and anodizing a part of the thickness of the aluminum layer to form an anodized layer, wherein a part of the thickness of the aluminum layer is not anodized to form a barrier between the anodized layer and the component body. [Application Example 6] The method according to Application Example 5, wherein electroplating the aluminum layer forms an aluminum layer having a thickness of about 20 micrometers (μm) to 150 μm. [Application Example 7] The method according to Application Example 5, wherein electroplating the aluminum layer forms an aluminum layer having a thickness of about 25 μm to 50 μm. [Application Example 8] The method according to Application Example 5, wherein the thickness of the anodized layer is about 5 μm to 50 μm, and a part of the aluminum layer that is not anodized forms an aluminum layer having a thickness of about 7 μm to 113 μm. [Application Example 9] The method according to Application Example 5, wherein anodizing a part of the thickness of the aluminum layer includes exposing the aluminum layer to a sulfuric acid bath at a temperature of 0°C to 3°C and a voltage exceeding 60 V to form the anodic oxide layer without water sealing. [Application Example 10] The method according to Application Example 5, wherein the aluminum layer is disposed directly adjacent to the component body without sandwiching an oxide layer. [Application Example 11] The method according to Application Example 3, wherein the aluminum barrier layer is at least 99% pure aluminum in terms of mass conversion. [Application Example 12] The method according to Application Example 1, wherein the conductive material includes at least one of silicon, silicon carbide, and graphite. [Application Example 13] The method according to Application Example 1, wherein the thermal expansion coefficient of the conductive material is less than 5.0×10 -6 / K. [Application Example 14] A component for use in a semiconductor processing chamber, comprising: a component body made of a conductive material having a thermal expansion coefficient of less than 10.0×10 -6 / K, and a metal oxide layer deposited on the surface of the component body. [Application Example 15] The component according to Application Example 14, wherein the conductive material includes an electrically conductive semiconductor, molybdenum, or titanium. [Application Example 16] The component according to Application Example 14, wherein the conductive material includes at least one of silicon, silicon carbide, and graphite. [Application Example 17] The component according to Application Example 14, wherein the thermal expansion coefficient of the conductive material is less than 5.0×10 / K. -6 [Application Example 18] The component according to Application Example 14, further comprising an aluminum barrier layer between the component body and the aluminum oxide layer forming the metal oxide layer. [Application Example 19] The component according to Application Example 18, wherein the thickness of the aluminum barrier layer is about 20 micrometers (μm) to 150 μm. [Application Example 20] The component according to Application Example 18, wherein the thickness of the aluminum oxide layer is about 5 μm to 50 μm. [Application Example 21] The component according to Application Example 20, wherein a part of the non-anodized aluminum layer forms an aluminum layer having a thickness of about 7 μm to 113 μm. [Application Example 22] The component according to Application Example 18, ​ The aluminum barrier layer is a component that is at least 99.9% pure aluminum in terms of mass conversion. [Application Example 23] It is a component described in Application Example 14, wherein the component is at least one of an electrode, a shower head, an edge ring, or a high flow liner used in the plasma processing chamber. [Application Example 24] It is a component described in Application Example 23, wherein the component forms an edge ring around an electrostatic chuck in the plasma processing chamber, and the electrostatic chuck supports a wafer for processing.

Claims

1. A method of manufacturing a component for use in a semiconductor processing chamber, comprising: Forming the component body from an electrically conductive silicon-containing material having a coefficient of thermal expansion of less than 10.0×10 -6 / K, and depositing a conformal aluminum barrier layer on a surface of the component body by electroplating a conformal aluminum barrier layer on a surface of the electrically conductive silicon-containing material; depositing an aluminum oxide coating on the aluminum barrier layer, the aluminum oxide coating having a thickness between about 12 μm and about 38 μm; and depositing the aluminum oxide coating comprises: anodizing the aluminum barrier layer to form an aluminum oxide coating, wherein a portion of the thickness of the aluminum barrier layer is not anodized to form an aluminum barrier between the anodized layer and the component body; a method.

2. The method according to claim 1, wherein depositing the aluminum oxide coating comprises confining the component body with the aluminum oxide coating.

3. The method according to claim 1, wherein depositing the aluminum barrier layer comprises forming a layer of aluminum having a thickness of about 20 micrometers (μm) to 150 μm.

4. The method according to claim 1, wherein depositing the aluminum barrier layer comprises forming a layer of aluminum having a thickness of about 25 μm to 50 μm.

5. The method according to claim 1, wherein anodizing the aluminum barrier layer comprises exposing the aluminum barrier layer to a sulfuric acid bath at a temperature of 0°C to 3°C and a voltage exceeding 60 V to form the anodized layer without water sealing.

6. The method according to claim 1, wherein the aluminum barrier layer is disposed directly adjacent to the component body without sandwiching an oxide layer.

7. The method according to claim 1, wherein the aluminum barrier layer is at least 99% pure aluminum by mass.

8. The method according to claim 1, wherein the electrically conductive silicon-containing material comprises at least one of silicon and silicon carbide.

9. The method according to claim 1, wherein The coefficient of thermal expansion of the electrically conductive silicon-containing material is less than 5.0×10 -6 / K, method.

10. A component for use in a semiconductor processing chamber, A component body made of an electrically conductive silicon-containing material having a coefficient of thermal expansion of less than 10.0×10 -6 / K, and A conformal aluminum barrier layer on the surface of the component body, An aluminum oxide layer deposited on the surface of the aluminum barrier layer, Comprising, The aluminum oxide layer has a thickness between about 12 μm and about 38 μm, The aluminum oxide layer is an anodized layer, The component is an edge ring, The anodized layer is formed on the plasma-facing surface of the radially inner surface of the edge ring and is not formed on the radially outer side of the edge ring, Component.

11. The component according to claim 10, Wherein the electrically conductive silicon comprises doped silicon. Component.

12. The component according to claim 10, The coefficient of thermal expansion of the electrically conductive silicon-containing material is less than 5.0×10 -6 / K, a component.

13. The component according to claim 10, The thickness of the conformal aluminum barrier layer is about 20 micrometers (μm) to 150 μm. Component.

14. The component according to claim 10, The conformal aluminum barrier layer is at least 99.9% pure aluminum in mass conversion. Component.

15. The component according to claim 10, The edge ring is located around an electrostatic chuck in the semiconductor processing chamber, and the electrostatic chuck supports a wafer for processing. Component.

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