Substrate Processing Equipment

The substrate processing apparatus uses a block body with metal and heat-insulating components to block processing gas from entering the motor housing, ensuring motor integrity and substrate temperature uniformity.

JP7725307B2Active Publication Date: 2025-08-19TOKYO ELECTRON LTD
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Patent Information

Application Number
JP2021149725
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-09-14
Publication Date
2025-08-19
Estimated Expiration
2041-09-14

AI Technical Summary

Technical Problem

The challenge is to prevent processing gas from entering the housing box that houses the motor for rotating the substrate in a substrate processing apparatus.

Method used

A substrate processing apparatus is designed with a block body comprising a lower member made of a metal material and an upper member made of a heat-insulating material, positioned between the rotary table and the housing box, which integrates with the rotary shafts to prevent processing gas intrusion.

Benefits of technology

This configuration effectively prevents processing gas from entering the housing box, maintaining the integrity of the motor's environment and enhancing temperature uniformity on the substrate.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

To provide a technology that can suppress intrusion of a process gas into a housing box which accommodates a motor rotating a substrate in a substrate processing apparatus rotating and revolving the substrate.SOLUTION: A substrate processing apparatus according to an aspect of the present disclosure comprises: a processing container; a rotary table that is provided to be rotatable in the processing container; mounting tables that are provided in plurality along a circumferential direction of the rotary table at positions being apart from the rotation center of the rotary table, each of the mounting tables mounting the substrate; rotation shafts that support the mounting tables relatively rotatable to the rotary table; and a block body that is provided on the same circumference as the plurality of rotation shafts, and rotates as one body together with the plurality of rotation shafts.SELECTED DRAWING: Figure 1
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Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] An apparatus is known that forms various films on wafers by rotating a turntable on which multiple wafers are placed, causing each wafer to revolve and repeatedly pass through multiple processing gas supply regions arranged along the radial direction of the turntable (see, for example, Patent Document 1). In this apparatus, while the wafers revolve on the turntable, the wafer mounting table is rotated so that the wafers rotate on their own axis, thereby achieving uniformity of the film in the circumferential direction of the wafers. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-111758 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for preventing intrusion of processing gas into a housing box that houses a motor for rotating a substrate on its axis in a substrate processing apparatus that rotates a substrate on its axis. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a processing vessel, a rotary table rotatably disposed within the processing vessel, and a plurality of mounting tables disposed along a circumferential direction of the rotary table at positions spaced apart from a rotation center of the rotary table, each mounting table on which a substrate is placed, a rotary shaft supporting the mounting tables rotatably relative to the rotary table, and a block body disposed on the same circumference as the plurality of rotary shafts and rotating integrally with the plurality of rotary shafts. a storage box provided below the rotary table and rotatable integrally with the rotary table; With death , The housing box houses a motor that rotates the rotary shaft, and the block body is provided between the rotary table and the housing box, and the block body includes a lower member that is placed on the housing box and made of a metal material, and an upper member that is placed on the lower member and made of a heat insulating material having a lower thermal conductivity than the metal material.. [Effects of the Invention]

[0006] According to the present disclosure, in a substrate processing apparatus that rotates and revolves a substrate, it is possible to prevent processing gas from entering a housing box that houses a motor that rotates the substrate. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view illustrating an example of a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 1 is a plan view showing an example of an internal structure of a substrate processing apparatus according to an embodiment; [Figure 3] FIG. 1 is a cross-sectional perspective view showing an example of an internal structure of a substrate processing apparatus according to an embodiment; [Figure 4] FIG. 1 is a perspective view showing an example of a block body; [Figure 5] Cross-sectional view showing an example of a storage box [Figure 6] Figure (1) showing the simulation results [Figure 7] Figure (2) showing the simulation results DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] [Substrate Processing Apparatus] An example of a substrate processing apparatus according to an embodiment will be described with reference to FIGS. 1 to 5. FIG. 1 is a cross-sectional view showing an example of a substrate processing apparatus according to an embodiment. FIG. 2 is a plan view showing an example of the internal structure of the substrate processing apparatus according to an embodiment, showing the substrate processing apparatus in a state where the top plate has been removed. FIG. 3 is a cross-sectional perspective view showing an example of the internal structure of the substrate processing apparatus according to an embodiment, showing the substrate processing apparatus in a state where the top plate and turntable have been removed. FIG. 4 is a perspective view showing an example of a block body of the substrate processing apparatus according to an embodiment. FIG. 5 is a cross-sectional view showing an example of a storage box of the substrate processing apparatus according to an embodiment.

[0010] The substrate processing apparatus 300 includes a processing section 310 , a rotation driving device 320 , and a control section 390 .

[0011] The processing unit 310 is configured to perform a film formation process for forming a film on a substrate, and includes a processing vessel 311, a gas inlet 312, a gas outlet 313, a transfer port 314, a heating unit 315, and a cooling unit 316.

[0012] The processing vessel 311 is a vacuum vessel whose interior can be depressurized. The processing vessel 311 has a flat shape with a substantially circular planar shape. The processing vessel 311 accommodates a plurality of substrates W therein. The substrates W may be, for example, semiconductor wafers. The processing vessel 311 includes a main body 311a, a top plate 311b, a sidewall 311c, and a bottom plate 311d (FIG. 1). The main body 311a has a substantially cylindrical shape. The top plate 311b is airtightly and detachably disposed on the upper surface of the main body 311a via a seal portion 311e. The sidewall 311c is connected to the lower surface of the main body 311a and has a substantially cylindrical shape. The bottom plate 311d is airtightly disposed on the bottom surface of the sidewall 311c.

[0013] The gas inlet 312 includes a source gas nozzle 312a, a reaction gas nozzle 312b, separation gas nozzles 312c and 312d, and a purge gas inlet 312e (FIGS. 1 and 2).

[0014] The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are arranged above the turntable 321 at intervals in the circumferential direction of the processing vessel 311 (the direction indicated by arrow A in FIG. 2). In the illustrated example, the separation gas nozzle 312c, the source gas nozzle 312a, the separation gas nozzle 312d, and the reaction gas nozzle 312b are arranged in this order clockwise (the rotation direction of the turntable 321) from the transfer port 314. Gas introduction ports 312a1, 312b1, 312c1, and 312d1 (FIG. 2), which are the base ends of the source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d, are fixed to the outer peripheral wall of the main body 311a. The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are introduced into the processing vessel 311 from the outer peripheral wall of the processing vessel 311 and are attached to extend horizontally along the radial direction of the main body 311a relative to the rotary table 321. The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are made of, for example, quartz.

[0015] The raw material gas nozzle 312a is connected to a raw material gas supply source (not shown) via piping, a flow rate controller, etc. (neither of which are shown). The raw material gas nozzle 312a is provided with a plurality of discharge holes (not shown) that open toward the turntable 321. The plurality of discharge holes are arranged at intervals along the length of the raw material gas nozzle 312a. The raw material gas nozzle 312a discharges the raw material gas from the plurality of discharge holes toward the upper surface of the turntable 321. The region below the raw material gas nozzle 312a becomes a raw material gas adsorption region P1 for adsorbing the raw material gas onto the substrate W. Examples of the raw material gas include a silicon-containing gas and a metal-containing gas.

[0016] The reactive gas nozzle 312b is connected to a reactive gas supply source (not shown) via piping, a flow rate controller, and the like (neither of which are shown). The reactive gas nozzle 312b is provided with a plurality of discharge holes (not shown) that open toward the turntable 321. The plurality of discharge holes are arranged at intervals along the length of the reactive gas nozzle 312b. The reactive gas nozzle 312b discharges the reactive gas from the plurality of discharge holes toward the upper surface of the turntable 321. The region below the reactive gas nozzle 312b becomes a reactive gas supply region P2 that oxidizes or nitrides the source gas adsorbed on the substrate W in the source gas adsorption region P1. Examples of the reactive gas include an oxidizing gas and a nitriding gas.

[0017] The separation gas nozzles 312c and 312d are both connected to a separation gas supply source (not shown) via piping and flow control valves (neither of which are shown). The separation gas nozzles 312c and 312d are provided with a plurality of discharge holes (not shown) that open toward the rotary table 321. The plurality of discharge holes are arranged at intervals along the length of the separation gas nozzles 312c and 312d. The separation gas nozzles 312c and 312d discharge the separation gas from the plurality of discharge holes toward the upper surface of the rotary table 321. Examples of the separation gas include inert gases such as argon (Ar) gas and N2 gas.

[0018] 2, two convex portions 317 are provided in the processing vessel 311. The convex portions 317, together with the separation gas nozzles 312c and 312d, form a separation region D, and are attached to the underside of the top plate 311b so as to protrude toward the turntable 321. The convex portions 317 have a fan-shaped planar shape with an arc-shaped top, and are disposed so that the inner arc is connected to the protruding portion 318 and the outer arc is aligned along the inner circumferential wall of the main body 311a of the processing vessel 311.

[0019] The purge gas inlet 312e introduces purge gas into an area A1 surrounded by the main body 311a, the sidewall 311c, the bottom plate 311d, the fixed shaft 315a, and the heater support 315b (FIG. 1). The purge gas inlet 312e is provided, for example, below the bottom plate 311d. However, the purge gas inlet 312e may be provided, for example, penetrating the sidewall 311c or the bottom plate 311d. Furthermore, for example, multiple purge gas inlets 312e may be provided. By introducing the purge gas into the area A1, the area A1 is maintained in a purge gas atmosphere. Furthermore, the purge gas introduced into the area A1 flows into the underside of the turntable 321 through a gap G1 between the main body 311a and the heater support 315b. This prevents the source gas and the reaction gas discharged from the source gas nozzle 312a and the reaction gas nozzle 312b, respectively, from flowing into the lower surface of the turntable 321 through the gap G1 and into the region A1. The purge gas is an inert gas such as Ar gas or N2 gas.

[0020] The gas exhaust port 313 includes a first exhaust port 313a and a second exhaust port 313b (FIG. 2). The first exhaust port 313a is formed in the bottom of the first exhaust region E1, which is in communication with the source gas adsorption region P1. The second exhaust port 313b is formed in the bottom of the second exhaust region E2, which is in communication with the reaction gas supply region P2. The first exhaust port 313a and the second exhaust port 313b are connected to an exhaust device (not shown) via exhaust piping (not shown).

[0021] The transfer port 314 is provided in a sidewall of the processing vessel 311 (FIG. 2). Through the transfer port 314, the substrate W is transferred between the rotary table 321 in the processing vessel 311 and a transfer arm 314a outside the processing vessel 311. The transfer port 314 is opened and closed by a gate valve (not shown).

[0022] The heating unit 315 includes a fixed shaft 315a, a heater support unit 315b, a heater 315c, a seal unit 315d, and cover members 315e and 315f (FIGS. 1 and 3).

[0023] The fixed shaft 315a has a cylindrical shape centered on the central axis AX of the processing vessel 311. The fixed shaft 315a is provided inside an orbital axis 323 (described later) and penetrates a bottom plate 311d of the processing vessel 311.

[0024] The heater support part 315b is installed on the fixed shaft 315a. The heater support part 315b has a disk shape and supports the heater 315c. The heater support part 315b is provided closer to the central axis AX of the processing vessel 311 than the main body 311a, with a gap G1 between it and the main body 311a. The gap G1 has an annular shape in a plan view and forms an orbit around which the rotation shaft 321b and the connection part 321d (described later) rotate. The width of the gap G1 is set so that the rotation shaft 321b and the connection part 321d do not come into contact with the main body 311a and the heater support part 315b when they rotate.

[0025] The heater 315c is provided on the main body 311a and the heater support portion 315b. The heater 315c generates heat when power is supplied from a power supply (not shown), and heats the substrate W.

[0026] The seal portion 315d is provided between the outer peripheral wall of the fixed shaft 315a and the inner peripheral wall of the revolution shaft 323. This allows the revolution shaft 323 to rotate relative to the fixed shaft 315a while maintaining an airtight state inside the processing vessel 311. The seal portion 315d includes, for example, a magnetic fluid seal.

[0027] The covering member 315e includes a side portion 315e1 and a lid portion 315e2. The side portion 315e1 is installed on and along the outer edge of the heater support portion 315b, straddling the source gas adsorption region P1, the reaction gas supply region P2, and the separation region D. The side portion 315e1 has a cylindrical shape with approximately the same outer diameter as the heater support portion 315b. The lid portion 315e2 is installed on the side portion 315e1. The lid portion 315e2 has a disk shape with approximately the same outer diameter as the side portion 315e1. The covering member 315e covers the heater 315c on the heater support portion 315b with the side portion 315e1 and the lid portion 315e2. This prevents the heater 315c on the heater support portion 315b from being exposed to the source gas and the reactive gas discharged from the source gas nozzle 312a and the reactive gas nozzle 312b, respectively, and flowing below the turntable 321.

[0028] The covering member 315f includes an inner portion 315f1, an outer portion 315f2, and a lid portion 315f3. The inner portion 315f1 is installed on the inner edge of the main body 311a, along the inner edge, straddling the source gas adsorption region P1, the reactive gas supply region P2, and the separation region D. The inner portion 315f1 has a cylindrical shape. The outer portion 315f2 is installed on the main body 311a outside the position where the inner portion 315f1 is installed, straddling the source gas adsorption region P1, the reactive gas supply region P2, and the separation region D. The outer portion 315f2 has a cylindrical shape with an inner diameter larger than the outer diameter of the inner portion 315f1. The lid portion 315f3 is installed on the inner portion 315f1 and the outer portion 315f2. The lid portion 315f3 has an annular plate shape with an inner diameter substantially the same as that of the inner portion 315f1 and an outer diameter larger than that of the outer portion 315f2. The covering member 315f covers the heater 315c on the main body 311a with the inner portion 315f1, the outer portion 315f2, and the lid portion 315f3. This prevents the heater 315c on the main body 311a from being exposed to the source gas and the reactive gas discharged from the source gas nozzle 312a and the reactive gas nozzle 312b, respectively, and flowing below the turntable 321.

[0029] Cooling section 316 includes fluid flow paths 316a1-316a4, chiller units 316b1-316b4, inlet pipes 316c1-316c4, and outlet pipes 316d1-316d4. Fluid flow paths 316a1-316a4 are formed inside main body 311a, top plate 311b, bottom plate 311d, and heater support section 315b, respectively. Chiller units 316b1-316b4 output temperature-adjusted fluid. The temperature-adjusted fluid output from chiller units 316b1-316b4 circulates through inlet pipes 316c1-316c4, fluid flow paths 316a1-316a4, and outlet pipes 316d1-316d4 in this order. This adjusts the temperatures of main body 311a, top plate 311b, bottom plate 311d, and heater support section 315b. Examples of the temperature control fluid include water and fluorine-based fluids such as Galden (registered trademark).

[0030] The rotary drive device 320 includes a rotary table 321 , a housing box 322 , a revolution shaft 323 , a motor 324 , and a block body 325 .

[0031] The rotary table 321 is provided in the processing vessel 311. The rotary table 321 rotates around the central axis AX of the processing vessel 311. The rotary table 321 has, for example, a disk shape and is made of quartz. On the upper surface of the rotary table 321, a plurality of (six in the illustrated example) mounting tables 321a are provided along the rotation direction (circumferential direction) at positions spaced apart from the rotation center of the rotary table 321. The rotary table 321 is connected to the storage box 322 via a connection portion 321d.

[0032] Each mounting table 321a has a disk shape slightly larger than the substrate W and is made of, for example, quartz. The substrate W is placed on each mounting table 321a. Each mounting table 321a is connected to a motor 321c via a rotation shaft 321b and a drive transmission mechanism 321e.

[0033] The rotation shaft 321b extends upward from within the storage box 322, penetrating the ceiling 322b, and then extends through the gap G1 to the underside of the mounting table 321a. The upper end of the rotation shaft 321b is connected to the underside of the mounting table 321a, and the lower end is connected to the motor 321c via the drive transmission mechanism 321e. This allows the rotation shaft 321b to transmit the power of the motor 321c to the mounting table 321a. When the motor 321c rotates, the rotation shaft 321b rotates via the drive transmission mechanism 321e, and the mounting table 321a rotates relative to the turntable 321 in response to the rotation of the rotation shaft 321b, causing the substrate W to rotate. When the mounting table 321a rotates relative to the turntable 321 in this manner, the turntable 321 and the mounting table 321a may come into contact with each other as the mounting table 321a rotates, generating particles. Therefore, in order to suppress the generation of particles, a gap G2 is provided between the rotary table 321 and the mounting table 321a.

[0034] A plurality of rotation shafts 321b are provided along the circumferential direction of the turntable 321, corresponding to the mounting tables 321a. Each rotation shaft 321b rotates the corresponding mounting table 321a relative to the turntable 321. The plurality of rotation shafts 321b are arranged on the same circumference centered on the central axis AX of the processing vessel 311. A seal 326c is provided in a through-hole in the ceiling 322b of the storage box 322, thereby maintaining an airtight state inside the storage box 322. The seal 326c includes, for example, a magnetic fluid seal.

[0035] The motor 321c rotates the mounting table 321a via the rotation shaft 321b relative to the rotary table 321. The motor 321c may be, for example, a servo motor.

[0036] The connection portion 321d connects the lower surface of the turntable 321 and the upper surface of the storage box 322. A plurality of connection portions 321d are provided along the circumferential direction of the turntable 321. For example, the number of connection portions 321d is the same as the number of rotation shafts 321b (six in the illustrated example). In the illustrated example, the plurality of rotation shafts 321b and the plurality of connection portions 321d are alternately arranged on the same circumference centered on the central axis AX of the processing vessel 311.

[0037] The drive transmission mechanism 321e transmits the power of the motor 321c to the rotation shaft 321b. The drive transmission mechanism 321e includes, for example, a plurality of gears.

[0038] The storage box 322 is provided below the turntable 321 in the processing vessel 311. The storage box 322 is connected to the turntable 321 via a connection part 321d and is configured to be rotatable integrally with the turntable 321. The storage box 322 may be configured to be movable up and down within the processing vessel 311 by a lifting mechanism (not shown). When the storage box 322 is raised and lowered, the turntable 321 and the mounting table 321a are raised and lowered integrally with the storage box 322. This adjusts the distance between the substrate W placed on the mounting table 321a and the source gas nozzle 312a and the reaction gas nozzle 312b. The storage box 322 has a main body part 322a and a ceiling part 322b.

[0039] The main body portion 322a is formed in a concave shape in cross section, and is formed in a ring shape along the rotation direction of the rotary table 321.

[0040] The ceiling portion 322b is provided on the main body portion 322a so as to cover an opening of the main body portion 322a which is formed in a concave shape in cross section. As a result, the main body portion 322a and the ceiling portion 322b form a container portion 322c which is isolated from the inside of the processing vessel 311.

[0041] The accommodation unit 322c is formed in a rectangular shape in a vertical cross section, and is formed in a ring shape along the rotation direction of the turntable 321. The accommodation unit 322c accommodates a motor 321c and a drive transmission mechanism 321e. The main body 322a is formed with a communication unit 322d that communicates the accommodation unit 322c with the outside of the substrate processing apparatus 300. This allows air to be introduced into the accommodation unit 322c from the outside of the substrate processing apparatus 300, cooling the inside of the accommodation unit 322c and maintaining it at atmospheric pressure.

[0042] The revolution shaft 323 is fixed to the bottom of the storage box 322. The revolution shaft 323 is installed to penetrate a bottom plate 311d of the processing vessel 311. The revolution shaft 323 transmits the power of the motor 324 to the turntable 321 and the storage box 322, causing the turntable 321 and the storage box 322 to rotate together. A seal 311f is installed in a through-hole in the bottom plate 311d of the processing vessel 311, thereby maintaining an airtight state inside the processing vessel 311. The seal 311f includes, for example, a magnetic fluid seal.

[0043] A through hole 323a is formed inside the revolution shaft 323. The through hole 323a is connected to the communication part 322d of the housing box 322, and functions as a fluid flow path for introducing air into the housing box 322. The through hole 323a also functions as a wiring duct for introducing power lines and signal lines for driving the motor 321c into the housing box 322. The number of through holes 323a provided is, for example, the same as the number of motors 321c.

[0044] The motor 324 rotates the rotary table 321 and the storage box 322 together with respect to the fixed shaft 315a via the revolution shaft 323. The motor 324 may be, for example, a servo motor.

[0045] A plurality of block bodies 325 (12 in the illustrated example) are provided along the circumferential direction of the turntable 321 on the same circumference (on the orbit of the rotation shaft 321b) as the plurality of rotation shafts 321b and the plurality of connection portions 321d (FIG. 4). In other words, a plurality of block bodies 325 are provided along the gap G1. In the illustrated example, the block bodies 325 are provided between the rotation shaft 321b and the connection portions 321d on the orbit of the rotation shaft 321b. Each block body 325 includes a lower member 325a and an upper member 325b. However, each block body 325 may be formed from a single member.

[0046] The lower member 325a is installed on the ceiling portion 322b of the storage box 322 (FIG. 4). The lower member 325a has a divided cylindrical shape, formed, for example, by dividing a cylinder in the circumferential direction. The upper surface of the lower member 325a is located, for example, higher than the lower surface of the heater support portion 315b. The gap between the outer peripheral wall of the lower member 325a and the inner peripheral wall of the main body 311a, and the gap between the inner peripheral wall of the lower member 325a and the outer peripheral wall of the heater support portion 315b are, for example, 3 mm or less. Fastening holes (not shown) are formed in the lower member 325a, and the lower member 325a is fixed to the ceiling portion 322b through the fastening holes with fastening members (not shown) such as screws. This allows the lower member 325a to rotate integrally with the storage box 322. The lower member 325a is preferably formed from a metal material that is heat-resistant and corrosion-resistant. This prevents the lower member 325a from being corroded by the source gas or reaction gas flowing under the turntable 321. It also prevents the block body 325 from being damaged by thermal shock or sudden stopping of the turntable 321. Examples of metal materials include stainless steel and nickel alloy.

[0047] The upper member 325b is placed on the lower member 325a (FIG. 4). Like the lower member 325a, the upper member 325b has a divided cylindrical shape formed by dividing a cylinder in the circumferential direction. The upper surface of the upper member 325b is located higher than the upper surfaces of the lid portions 315e2 and 315f3. The gap between the outer peripheral wall of the upper member 325b and the inner peripheral wall of the inner portion 315f1, and the gap between the inner peripheral wall of the upper member 325b and the outer peripheral wall of the side portion 315e1 are, for example, 3 mm or less. Fastening holes 325b1 are formed in the upper member 325b, and the upper member 325b is fixed to the lower member 325a through the fastening holes 325b1 with fastening members (not shown) such as screws. This allows the upper member 325b to rotate integrally with the lower member 325a and the storage box 322. The upper member 325b is preferably formed of a heat insulating material having a lower thermal conductivity than the metal material constituting the lower member 325a. This prevents heat from the heater 315c from being transferred to the storage box 322 via the block 325 by thermal conduction. As a result, the motor 321c in the storage box 322 is prevented from being exposed to high temperatures. Furthermore, heat from the substrate W placed on the mounting table 321a is prevented from being dissipated from the center of the wafer via the block 325, improving temperature uniformity within the surface of the substrate W. Examples of heat insulating materials include quartz and ceramics.

[0048] As described above, the block body 325 is disposed along the gap G1 and is configured to rotate integrally with the rotation shaft 321b and the connection portion 321d. This blocks most of the gap G1, regardless of whether the rotation shaft 321b and the connection portion 321d are rotating. Therefore, the source gas and the reaction gas discharged from the source gas nozzle 312a and the reaction gas nozzle 312b, respectively, and flowing below the turntable 321, are prevented from entering the region A1 through the gap G1. Furthermore, by forming the gap G1 as a narrow space, the pressure of the purge gas introduced from the purge gas inlet 312e can be increased in the gap G1. As a result, the source gas and the reaction gas are prevented from mixing in the region A1, thereby preventing the generation of particles in the region A1 due to the reaction between the source gas and the reaction gas. However, if the source gas and the reaction gas enter the region A1, the source gas and the reaction gas may react with each other in the region A1, generating particles.

[0049] The control unit 390 controls each unit of the substrate processing apparatus 300. The control unit 390 may be, for example, a computer. A computer program that controls the operation of each unit of the substrate processing apparatus 300 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0050] [Evaluation results] In the substrate processing apparatus 300 of the embodiment, the concentration distributions of the source gas and the reactive gas on the upper and lower surfaces of the turntable 321 were calculated by simulation when a plurality of block bodies 325 were positioned along the gap G1. In this evaluation, the concentration distribution of the source gas was calculated when the source gas was supplied from the source gas nozzle 312a, the separation gas was supplied from the separation gas nozzle 312d, and the purge gas was supplied from the purge gas inlet 312e (hereinafter referred to as "Evaluation 1"). In addition, the concentration distribution of the reactive gas was calculated when the reactive gas was supplied from the reactive gas nozzle 312b, the separation gas was supplied from the separation gas nozzle 312d, and the purge gas was supplied from the purge gas inlet 312e (hereinafter referred to as "Evaluation 2").

[0051] 6A and 6B are diagrams showing the analysis results of Evaluation 1, illustrating the concentration distribution of the source gas in the space including the source gas adsorption region P1, the reaction gas supply region P2, and the separation region D, when the turntable 321 is viewed obliquely from below. Fig. 6A shows the results when the flow rate of the purge gas introduced from the purge gas inlet 312e is 5 L / min, and Fig. 6B shows the results when the flow rate of the purge gas introduced from the purge gas inlet 312e is 10 L / min.

[0052] 6(a) and 6(b), it can be seen that when the flow rate of the purge gas introduced from the purge gas inlet 312e is either 5 L / min or 10 L / min, the source gas does not penetrate below the block body 325. This result shows that by providing a plurality of block bodies 325 along the gap G1, it is possible to prevent the source gas from penetrating into the region A1 through the gap G1.

[0053] 7A and 7B are diagrams showing the analysis results of Evaluation 2, illustrating the concentration distribution of the reactant gas in the space including the source gas adsorption region P1, the reactant gas supply region P2, and the separation region D when the turntable 321 is viewed obliquely from below. Fig. 7A shows the results when the flow rate of the purge gas introduced from the purge gas inlet 312e is 5 L / min, and Fig. 7B shows the results when the flow rate of the purge gas introduced from the purge gas inlet 312e is 10 L / min.

[0054] 7(a) and 7(b), it can be seen that when the flow rate of the purge gas introduced from the purge gas inlet 312e is either 5 L / min or 10 L / min, the source gas does not penetrate below the block body 325. This result shows that by providing a plurality of block bodies 325 along the gap G1, it is possible to prevent the source gas from penetrating into the region A1 through the gap G1.

[0055] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0056] In the above embodiment, the case where six mounting tables 321a are provided on the turntable 321 is described, but the present disclosure is not limited to this. For example, the number of mounting tables 321a may be five or less, or seven or more.

[0057] In the above embodiment, the processing unit 310 includes the processing vessel 311, the gas inlet 312, the gas outlet 313, the transfer port 314, the heating unit 315, and the cooling unit 316. However, the present disclosure is not limited to this. For example, the processing unit 310 may further include a plasma generating unit that generates plasma for activating various gases supplied into the processing vessel 311. [Explanation of symbols]

[0058] 300 Substrate processing equipment 311 Processing vessel 321 Rotary Table 321a Mounting table 321b rotation axis 325 Block Letters

Claims

1. A processing vessel; a rotary table rotatably provided within the processing vessel; a plurality of mounting tables provided along a circumferential direction of the turntable at positions spaced apart from a rotation center of the turntable, each mounting table being adapted to mount a substrate thereon; a rotation shaft that supports the mounting table so that the mounting table can rotate relatively with respect to the rotary table; a block body that is provided on the same circumference as the plurality of rotary shafts and rotates integrally with the plurality of rotary shafts; a storage box provided below the rotary table and rotatable integrally with the rotary table; and the housing box houses a motor that rotates the rotation shaft; the block body is provided between the rotary table and the storage box, The block body is a lower member that is placed on the storage box and is made of a metal material; an upper member disposed on the lower member and made of a heat insulating material having a lower thermal conductivity than the metal material; Including, Substrate processing equipment.

2. The block body is placed on the storage box. The substrate processing apparatus according to claim 1 .

3. the lower member is formed of stainless steel or a nickel alloy, The upper member is made of quartz or ceramics. The substrate processing apparatus according to claim 1 or 2.

4. Further, a purge gas inlet is provided for introducing a purge gas into the area where the storage box is provided. The substrate processing apparatus according to claim 1 .

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