integrated circuit device

Abstract

To provide an integrated circuit device capable of preventing the occurrence of defects caused by uneven heat distribution of a heating element.SOLUTION: An integrated circuit device 20 includes a heating element 30 and a control circuit 50 that controls current flow through the heating element 30. The heating element 30 has a short side SS and a long side LS, and the outline of the integrated circuit device 20 has a first side SD1 and a second side SD2 intersecting with the first side SD1. A distance DL between the long side LS of the heating element 30 and the first side SD1 of the integrated circuit device 20 is greater than a distance DS between the short side SS of the heating element 30 and the second side SD2 of the integrated circuit device 20.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an integrated circuit device and the like. [Background technology]

[0002] Patent Document 1 discloses a bridge circuit arrangement method that improves the time and accuracy of detecting an overheating state in a circuit device that drives a DC motor or the like. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-077040 Summary of the Invention [Problem to be solved by the invention]

[0004] Patent Document 1 does not take into consideration the shape of the transistors that generate heat or the orientation when placing them in specific areas on the chip, which results in an issue of uneven heat distribution within the chip. [Means for solving the problem]

[0005] One aspect of the present disclosure relates to an integrated circuit device that includes a heating element and a control circuit that controls the flow of current to the heating element, wherein the heating element has an outer shape with a short side and a long side, and the integrated circuit device has an outer shape with a first side and a second side that intersects with the first side, and the distance between the long side of the heating element and the first side of the integrated circuit device is greater than the distance between the short side of the heating element and the second side of the integrated circuit device.

[0006] Another aspect of the present disclosure relates to an integrated circuit device including a charge transistor that charges a load, a discharge transistor that discharges the load, and a control circuit that controls the current flowing through the charge transistor and the current flowing through the discharge transistor, wherein the outer shape of the charge transistor has a first short side and a first long side, the outer shape of the discharge transistor has a second short side and a second long side, and the outer shape of the integrated circuit device has a first side, a second side intersecting with the first side, and a third side that is the opposite side to the first side, wherein the distance between the first long side of the charge transistor and the first side of the integrated circuit device is greater than the distance between the first short side of the charge transistor and the second side of the integrated circuit device, and the distance between the second long side of the discharge transistor and the third side of the integrated circuit device is greater than the distance between the second short side of the discharge transistor and the second side of the integrated circuit device. [Brief explanation of the drawings]

[0007] [Figure 1] 1 shows an example of the configuration of an integrated circuit device according to the present embodiment. [Figure 2] FIG. 10 is a schematic diagram showing heat diffusion within the plane of an integrated circuit device when the method of the present embodiment is not applied. [Figure 3] 10A and 10B are schematic diagrams showing heat diffusion within a plane of an integrated circuit device when the method of the present embodiment is applied; [Figure 4] FIG. 10 is a schematic diagram showing heat diffusion within the plane of an integrated circuit device when the method of the present embodiment is not applied. [Figure 5] 1 shows a detailed first configuration example of an integrated circuit device. [Figure 6] FIG. 10 is a schematic diagram showing heat distribution within a plane of an integrated circuit device when the method of the present embodiment is applied. [Figure 7] FIG. 10 is a schematic diagram showing heat diffusion within the plane of an integrated circuit device when the method of the present embodiment is not applied. [Figure 8] 10 shows a second detailed configuration example of an integrated circuit device. [Figure 9] 10 shows a detailed third configuration example of an integrated circuit device. [Figure 10] 10 shows a detailed fourth configuration example of an integrated circuit device. [Figure 11] 5 shows a detailed fifth example configuration of an integrated circuit device. [Figure 12] 13 is a configuration example that is a comparative example of the fifth configuration example. [Figure 13] Specific circuit configuration examples of integrated circuit devices and electronic devices. [Figure 14] 6 shows a detailed sixth example configuration of an integrated circuit device. DETAILED DESCRIPTION OF THE INVENTION

[0008] Preferred embodiments of the present disclosure will be described in detail below. Note that the embodiments described below do not unduly limit the scope of the claims, and not all of the configurations described in the embodiments are necessarily essential components.

[0009] 1. Integrated circuit devices FIG. 1 shows a basic configuration example of an integrated circuit device 20 of this embodiment. The integrated circuit device 20 includes a heating element 30 and a control circuit 50. FIG. 1 and FIGS. 8, 9, 10, and 14, which will be described later, show the layout arrangement of the integrated circuit device 20 in a plan view. The plan view is, for example, a plan view in a direction perpendicular to the substrate of the integrated circuit device 20. The integrated circuit device 20 of this embodiment can also be used in a heater circuit. Furthermore, the integrated circuit device 20 of this embodiment can be used as a heater circuit used in, for example, an oven-controlled crystal oscillator.

[0010] The integrated circuit device 20 is, for example, an integrated circuit (IC) manufactured by a semiconductor process, and is a semiconductor chip in which circuit elements are formed on a semiconductor substrate. The integrated circuit device 20 has an outer shape including a first side SD1 and a second side SD2 intersecting the first side SD1. The integrated circuit device 20 also has a third side SD3 opposite the first side SD1 and a fourth side SD4 opposite the second side SD2. The outer shape of the integrated circuit device 20 is, for example, the outer shape of a rectangular semiconductor chip. For example, the first side SD1, the second side SD2, the third side SD3, and the fourth side SD4 are sides of the semiconductor chip substrate. A semiconductor chip is also called a silicon die. In this embodiment, the direction along the first side SD1 of the integrated circuit device 20 is defined as the X direction, and the direction along the second side SD2 is defined as the Y direction. The direction perpendicular to the X and Y directions is defined as the Z direction. The Z direction is perpendicular to the semiconductor substrate of the integrated circuit device 20. The X direction, Y direction, and Z direction are the X-axis direction, the Y-axis direction, and the Z-axis direction, respectively.

[0011] The heating element 30 is an element that generates heat. The heating element 30 can be realized by a transistor such as a MOS transistor or a bipolar transistor, or a resistor element. When the heating element 30 is realized by a MOS transistor, the MOS transistor may be an N-type transistor or a P-type transistor.

[0012] The outer shape of the heating element 30 has a short side SS and a long side LS. In FIG. 1, the long side LS of the heating element 30 is along the X direction, and the short side SS is along the Y direction. Specifically, the outer shape of the heating element 30 is a rectangle having a short side SS and a long side LS. The outer shape of the heating element 30 is, for example, the outer shape of the area in which the heating element 30 is arranged. Note that the outer shape of the heating element 30 only needs to have at least a short side SS and a long side LS, and may be a polygonal shape other than a rectangle.

[0013] The control circuit 50 is a circuit that controls the flow of current to the heating element 30. The control circuit 50 is realized, for example, by a logic circuit. For example, if the heating element 30 is a MOS transistor, the control circuit 50 controls the current flowing through the MOS transistor, which is the heating element 30, by controlling the gate of the MOS transistor. If the heating element 30 is a bipolar transistor, the control circuit 50 controls the collector current flowing through the bipolar transistor, for example, by controlling the base-emitter voltage of the bipolar transistor. If the heating element 30 is a resistive element, the control circuit 50 controls the current flowing through the resistive element by controlling the voltage applied to the resistive element or by controlling a current source connected to the resistive element.

[0014] In this embodiment, as shown in FIG. 1 , the distance DL between the long side LS of the heating element 30 and the first side SD1 of the integrated circuit device 20 is greater than the distance DS between the short side SS of the heating element 30 and the second side SD2 of the integrated circuit device 20. That is, the relationship DL > DS holds. Specifically, the distance DL is the distance between the long side LS of the heating element 30 and the first side SD1 of the integrated circuit device 20 facing the long side LS. For example, the distance DL is the distance between the first side SD1 and the long side LS of the two long sides of the heating element 30, which is the shorter side to the first side SD1 of the integrated circuit device 20. The distance DS is the distance between the short side SS of the heating element 30 and the second side SD2 of the integrated circuit device 20 facing the short side SS. For example, the distance DS is the distance between the short side SS of the heating element 30, which is the shorter side to the second side SD2 of the integrated circuit device 20, and the second side SD2.

[0015] As described above, the integrated circuit device 20 of this embodiment has the heating element 30 and the control circuit 50, and the distance DL between the long side LS of the heating element 30 and the first side SD1 of the integrated circuit device 20 is greater than the distance DS between the short side SS of the heating element 30 and the second side SD2 of the integrated circuit device 20. The reason for DL>DS in this way will be explained in detail below.

[0016] For example, Fig. 2 is a schematic diagram showing heat diffusion within a plane of an integrated circuit device 20 when the method of this embodiment is not applied, and Fig. 3 is a schematic diagram showing heat diffusion within the same plane when the method of this embodiment is applied. Specifically, in Fig. 2, arrows indicate how heat diffuses when the heating element 30 is arranged so that DL = DS, and in Fig. 3, arrows indicate how heat diffuses when the heating element 30 is arranged so that DL > DS.

[0017] The main materials constituting the integrated circuit device 20 are, for example, a silicon substrate, metal wiring such as aluminum, and an insulating film such as silicon oxide. The outside of the integrated circuit device 20 is covered with, for example, a mold resin.

[0018] Here, the thermal conductivity of each material is approximately 220 (W / m / K) for aluminum wiring, 120 to 150 (W / m / K) for impurity-doped silicon substrate, 1.3 to 1.4 (W / m / K) for silicon oxide, approximately 0.2 (W / m / K) or less for mold resin, and 0.02 to 0.03 (W / m / K) for air.

[0019] Therefore, in Figures 2 and 3, of the heat emitted from the heating element 30, the heat that diffuses toward the third side SD3 and the fourth side SD4 of the integrated circuit device 20 is separated from the opposing third side SD3 and fourth side SD4 by a sufficient distance via metal wiring such as silicon or aluminum, which has a higher thermal conductivity than the mold resin, and diffuses without stagnation.

[0020] On the other hand, the heat released toward the first side SD1 or the second side SD2 easily reaches the end of the integrated circuit device 20, and beyond that there is a molded resin with very low thermal conductivity, so the heat stagnates in the narrow area between the heating element 30 and the first side SD1 or the second side SD2 of the integrated circuit device 20, causing localized heat imbalances inside the integrated circuit device 20.

[0021] 2 where DL=DS, the arrangement of Fig. 3 where DL>DS has a longer distance from the long side LS to the opposing first side SD1 of the integrated circuit device 20, making it less likely for heat to stagnate and causing localized heat imbalances inside the integrated circuit device 20. Therefore, according to the method of this embodiment where DL>DS, it is possible to prevent problems caused by imbalances in the distribution of heat generated inside the integrated circuit device 20.

[0022] FIG. 4 is a schematic diagram showing the diffusion of heat when the outer shape of the heating element 30 is square, using arrows. Considering the relationship between the outer shape of the heating element 30 and the heat dissipated from the heating element 30, the longer the outer perimeter of the heating element 30 in plan view relative to the area of the heating element 30 in plan view, the larger the area of the heating element 30 that comes into contact with the outside. Specifically, for a heating element 30 with the same area in plan view, the outer perimeter of the outer shape increases and the area of the heating element 30 that comes into contact with the outside increases in the order of circle, square, and rectangle. In other words, for heating elements 30 with the same area in plan view, the heat dissipation performance to the outside improves in the order of circle, square, and rectangle. Generally, the outer shape of an element region formed on a semiconductor chip is rectangular in plan view. Therefore, if the outer shape of the heating element 30 is square, the area of contact with the outside is smaller than if it were rectangular, and heat is more likely to remain inside the heating element 30.

[0023] 4, where the method of this embodiment is not applied, the outer shape of the heating element 30 in plan view has no long or short sides, and is specifically a square. In this case, as shown by the arrow inside the heating element 30 in FIG. 4, part of the heat generated by the heating element 30 remains inside the heating element 30.

[0024] In contrast to this, in the example of Fig. 3 where the method of this embodiment is applied, the outer shape of the heating element 30 has long sides LS and short sides SS, and is specifically rectangular, as shown in Fig. 1. Therefore, compared to the case where the outer shape of the heating element 30 is square as shown in Fig. 4, in Fig. 3, the area of the heating element 30 that comes into contact with the outside increases by the amount of the longer outer periphery, making it easier for heat to diffuse to the outside via the long sides LS, and as a result, less heat remains inside the heating element 30.

[0025] Furthermore, when the length of the long side LS is approximately twice or more the length of the short side SS, there is a significant improvement in the heat dissipation properties of the heat generating element 30. For this reason, in this embodiment, it is desirable that the length of the long side LS of the heat generating element 30 is twice or more the length of the short side SS.

[0026] From the above explanation, it can be seen that in order to improve the heat dissipation properties of the heating element 30 and to alleviate uneven heat distribution inside the integrated circuit device 20, it is optimal to place the heating element 30 near the center of the XY plane inside the integrated circuit device 20.

[0027] However, other elements are usually placed near the center of the integrated circuit device 20, and placing the heating element 30 near the center would result in longer wire bonding, making assembly difficult. For these reasons, it is often necessary to place the heating element 30 at the edge of the integrated circuit device 20. The method of this embodiment is useful in such cases when considering the shape and placement direction of the heating element 30.

[0028] 2. Detailed configuration example of integrated circuit device 5 shows a detailed first configuration example of the integrated circuit device 20. In FIG. 5, the integrated circuit device 20 includes a heating element 30, a temperature sensor 40 that detects the temperature of the heating element 30, and a control circuit 50.

[0029] The heating element 30 includes a first heating element 31 and a second heating element 32. Specifically, the heating element 30 is composed of the first heating element 31 and the second heating element 32, which are arranged alongside the first heating element 31 in the Y direction across an area AR. The first heating element 31 and the second heating element 32 are arranged a predetermined distance apart in the Y direction. The predetermined distance is, for example, approximately 20 μm. The first heating element 31 has a long side LS1 and a short side SS1. The second heating element 32 has a long side LS2 and a short side SS2. The short sides SS1 and SS2 are, for example, approximately 180 μm. In the first heating element 31, the long side LS1 is preferably at least twice the length of the short side SS1. In the second heating element 32, the long side LS2 is preferably at least twice the length of the short side SS2. As in FIG. 1, the distance DL is greater than the distance DS.

[0030] The first heating element 31 and the second heating element 32 are electrically connected in parallel, and the current flowing through the parallel-connected first heating element 31 and second heating element 32 is controlled by an output signal from the control circuit 50. For example, a first current flows through the first heating element 31, and a second current flows through the second heating element 32, so that a current equal to the sum of the first current and the second current flows through the heating element 30.

[0031] The temperature sensor 40 is a sensor circuit that detects temperature. Specifically, the temperature sensor 40 outputs a temperature-dependent voltage that changes according to the environmental temperature as a temperature detection voltage. For example, the temperature sensor 40 generates the temperature detection voltage using a circuit element that has temperature dependency. Specifically, the temperature sensor 40 outputs a temperature detection voltage whose voltage value changes depending on temperature by using the temperature dependency of the forward voltage of a PN junction. For example, the forward voltage of a PN junction can be the base-emitter voltage of a bipolar transistor. When performing digital temperature compensation processing, the temperature sensor 40 measures a temperature such as the environmental temperature and outputs the result as temperature detection data.

[0032] The temperature sensor 40 is provided to detect the temperature of the first heating element 31, the second heating element 32, and their surroundings. The temperature sensor 40 is arranged at a position where the position in the X direction is between the center of the region AR and the second side SD2, and the position in the Y direction is between the first heating element 31 and the second heating element 32. For example, let the X coordinate of the arrangement position of the temperature sensor 40 be XT, the X coordinate of the center of the region AR be XC, and the X coordinate of the second side SD2 be XS. In this case, for example, the relational expression XC < XT < XS holds. Also, let the Y coordinate of the arrangement position of the temperature sensor 40 be YT, the Y coordinate of the opposite side of the long side LS1 of the first heating element 31 be Y1, and the Y coordinate of the opposite side of the long side LS2 of the second heating element 32 be Y2. In this case, for example, the relational expression Y2 < YT < Y1 holds.

[0033] Here, the region AR is the region existing between the first heating element 31 and the second heating element 32. Specifically, the region AR is a region surrounded by the first region side ASD1, the second region side ASD2, the opposite side of the long side LS1 of the first heating element 31, and the opposite side of the long side LS2 of the second heating element 32. The center of the region AR is, for example, the position where the center line of the first region side ASD1 and the second region side ASD2 passes, and it may be substantially in the center of the region AR. The first region side ASD1 is a region side of the outer shape of the region AR, and among the region sides parallel to the Y direction, it is the side with a shorter distance from the side of the opposing integrated circuit device 20. The second region side ASD2 is the opposite side of the first region side ASD1 in the outer shape of the region AR.

[0034] As in the first configuration example of FIG. 5, by dividing the heating element 30 into the first heating element 31 and the second heating element 32, the area where the heating element 30 contacts the outside increases, so the heat dissipation performance is improved. Also, by dividing the heating element 30 into the first heating element 31 and the second heating element 32, the region AR can be secured between the first heating element 31 and the second heating element 32, and it becomes possible to arrange the temperature sensor 40 in this region AR. In FIG. 5, an example of dividing the heating element 30 into two heating elements is shown, but the heating element 30 may be divided into three or more heating elements.

[0035] FIG. 6 is a diagram showing the heat distribution in the XY plane after the heating element 30 starts generating heat when the method of this embodiment is applied. In FIG. 6, the heat distribution after a certain time has elapsed since the heating element 30 started emitting heat is simulated, and the regions R1, R2, R3, and R4 are displayed in order of temperature. As shown in FIG. 6, R1, where the temperature is highest, is located closer to the second side SD2 than the center of the region AR. Therefore, as shown in the first configuration example in FIG. 5, by placing the temperature sensor 40 closer to the second side SD2 than the center of the region AR in the X direction, it is possible to properly detect an overheated state of the heating element 30.

[0036] To quickly detect an overheated state, it is necessary to consider the temporal change in the location of the highest temperature in the integrated circuit device 20. After heat generation begins, the location where the temperature first reaches the highest appears in the center of the region AR. Because the outside of the second side SD2 is covered with molded resin and there is no way for heat to escape, after a certain amount of time has passed, the highest temperature location extends from the center of the region AR in the X direction to the second side SD2. Therefore, to quickly detect an overheated state of the heating element 30 using the temperature sensor 40, it is desirable to position the temperature sensor 40 between the center of the region AR in the X direction and the first side ASD1. This is because if the temperature sensor 40 is positioned between the first side ASD1 and the second side SD2 in the X direction, it may take longer to detect an overheated state than if it is positioned between the center of the region AR and the first side ASD1.

[0037] Fig. 7 is a diagram showing the heat distribution in the XY plane after a certain time has passed since the heating element 30 started to generate heat when the method of this embodiment is not applied. In Fig. 7, the regions are labeled R1, R2, R3, R4, R5, and R6, in order of temperature. Compared to Fig. 6, in which the method of this embodiment is applied, in Fig. 7, R1 appears in the region between the first heating element 31 and the second heating element 32 and in the region between the first heating element 31 and the first side SD1, indicating that heat is distributed unevenly around the heating elements.

[0038] Fig. 8 shows a detailed second configuration example of the integrated circuit device 20. The second configuration example of Fig. 8 is a configuration example in which the heating element 30 of Fig. 1 is a transistor TR.

[0039] The transistor TR is controlled by the control circuit 50, and a current flows between the drain D and the source S, generating heat. The transistor TR is, for example, a MOS transistor. The transistor TR may be an N-type MOS transistor or a P-type MOS transistor. Here, the transistor TR is arranged so that the longitudinal direction of the gate G is aligned, for example, along the X direction.

[0040] As with the basic configuration example shown in FIG. 1, the distance DL in FIG. 8 is greater than the distance DS. That is, the relationship DL>DS holds. The distance DL is the distance between the long side LS of the transistor TR and the first side SD1 of the integrated circuit device 20 facing the long side LS. The distance DS is the distance between the short side SS of the transistor TR and the second side SD2 of the integrated circuit device 20 facing the short side SS.

[0041] The transistor TR is electrically connected to a control circuit 50. An output signal from the control circuit 50 is input to the gate G of the transistor TR. A source S of the transistor TR is connected to, for example, a ground node. A drain D of the transistor TR is connected to, for example, a power supply voltage node. A well of the transistor TR is connected to, for example, the ground node. When the voltage of the output signal from the control circuit 50 is greater than the threshold voltage, a current flows from the drain D to the source S of the transistor TR.

[0042] As mentioned above, in the integrated circuit device 20, the arrangement of FIG. 3 where DL>DS has a longer distance DL from the long side LS to the opposing first side SD1 than the arrangement of FIG. 2 where DL=DS, making it less likely for heat to stagnate. Also, in FIGS. 2 and 3, where the heating element has a rectangular outer shape in plan view, the perimeter is longer than in FIG. 4, where the heating element has a square outer shape, improving the heat dissipation of the heating element. These effects are similarly obtained when the heating element 30 is a transistor TR, as in the second configuration example of FIG. 8.

[0043] The transistor TR is used, for example, to charge or discharge the load 300 described below. For this reason, it is expected that the amount of current flowing through the transistor TR will be large, and that the amount of heat generated will also be large. Therefore, when a transistor TR is provided as the heating element 30, by setting the shape and arrangement direction of the transistor TR as in the second configuration example, it is possible to prevent uneven distribution of heat within the integrated circuit device 20.

[0044] FIG. 9 shows a detailed third configuration example of the integrated circuit device 20. In FIG. 9, the transistor TR shown in the second configuration example is composed of multiple unit transistors. For example, the transistor TR is composed of multiple unit transistors arranged in parallel between the drain and source of the transistor TR. The multiple unit transistors are arranged side by side in the X direction, for example, so that the longitudinal direction of the gate G of each unit transistor is parallel to the Y direction. In this case, the source of each unit transistor is shared with the source S of an adjacent unit transistor. Furthermore, the drain of each unit transistor is shared with the drain D of an adjacent unit transistor. Note that the arrangement and configuration of the unit transistors are not limited to those described above.

[0045] As with the basic configuration example shown in FIG. 1, the distance DL in FIG. 9 is greater than the distance DS. That is, the relationship DL>DS holds. The distance DL is the distance between the long side LS of the transistor TR and the first side SD1 of the integrated circuit device 20 that faces the long side LS. The distance DS is the distance between the short side SS of the transistor TR and the second side SD2 of the integrated circuit device 20 that faces the short side SS.

[0046] As mentioned above, in the integrated circuit device 20, the arrangement of FIG. 3 where DL > DS has a longer distance from the long side LS to the opposing first side SD1 than the arrangement of FIG. 2 where DL = DS, making it less likely for heat to stagnate. Also, in FIGS. 2 and 3 where the outer shape of the heating element 30 is rectangular in plan view, the perimeter is longer than in FIG. 4 where the outer shape of the heating element 30 is square, thereby improving the heat dissipation performance of the heating element 30. These effects can be similarly obtained even when the heating element 30 is a transistor TR composed of multiple unit transistors, as in the third configuration example of FIG. 9.

[0047] By configuring the transistor TR from multiple unit transistors as in the third configuration example of FIG. 9, it is possible to increase the amount of current of the transistor TR per unit area compared to the second configuration example of FIG. 8. In other words, current supply capability can be improved. Furthermore, this increase in current amount also increases the amount of heat generated per unit area. Therefore, when the transistor TR is configured from multiple unit transistors, setting the arrangement direction and shape of the unit transistors as in the third configuration example makes it possible to effectively prevent uneven heat distribution within the integrated circuit device 20. Furthermore, by configuring the transistor TR from multiple unit transistors, the gate width W of each unit transistor can be shortened, thereby improving reliability, etc.

[0048] 10 shows a detailed fourth configuration example of the integrated circuit device 20. In FIG. 10, the integrated circuit device 20 includes a transistor TR, a temperature sensor 40, and a control circuit 50.

[0049] The transistor TR is composed of a first transistor TR1 and a second transistor TR2. Specifically, the transistor TR is composed of the first transistor TR1 and a second transistor TR2 arranged alongside the first transistor TR1 in the Y direction with an area AR sandwiched therebetween. The first transistor TR1 and the second transistor TR2 are arranged a predetermined distance apart in the Y direction. The first transistor TR1 has a long side LS1 and a short side SS1. The second transistor TR2 has a long side LS2 and a short side SS2. In the first transistor TR1, the long side LS1 is preferably at least twice the length of the short side SS1. In the second transistor TR2, the long side LS2 is preferably at least twice the length of the short side SS2.

[0050] As in the basic configuration example shown in FIG. 1, the distance DL in FIG. 10 is greater than the distance DS. The distance DL is the shorter of the distances between the long side of the transistor TR and the side of the integrated circuit device 20 facing the long side. In FIG. 10, the distance DL is the distance between the long side LS1 and the first side SD1. The distance DS is the shorter of the distances between the short side of the transistor TR and the side of the integrated circuit device 20 facing the short side. In FIG. 10, the distance DS is the distance between the short sides SS1 and SS2 and the second side SD2.

[0051] The first transistor TR1 and the second transistor TR2 are electrically connected in parallel. For example, the sources of the first transistor TR1 and the second transistor TR2 are connected to each other and the drains are connected to each other. The first transistor TR1 and the second transistor TR2 are controlled by an output signal from the control circuit 50. The first transistor TR1 may be composed of multiple unit transistors. The second transistor TR2 may also be composed of multiple unit transistors.

[0052] The temperature sensor 40 is provided to detect the temperatures of the first transistor TR1, the second transistor TR2, and their surroundings. The temperature sensor 40 is disposed at a position between the center of the area AR and the second side SD2 in the X direction, and between the first transistor TR1 and the second transistor TR2 in the Y direction.

[0053] Here, the region AR is a region existing between the first transistor TR1 and the second transistor TR2, and is a region surrounded by a first region side ASD1, a second region side ASD2, the side opposite to the long side LS1 of the first transistor TR1, and the side opposite to the long side LS2 of the second transistor TR2. The first region side ASD1 is a side of the outline of the region AR, and is the side parallel to the Y direction that is closer to the opposing side of the integrated circuit device 20. The second region side ASD2 is the side opposite to the first region side ASD1 in the outline of the region AR.

[0054] In the fourth configuration example, dividing the transistor TR into a first transistor TR1 and a second transistor TR2 increases the area of the transistor TR that comes into contact with the outside, improving heat dissipation. Also, dividing the transistor TR secures an area AR, which allows the temperature sensor 40 to be placed in the area AR.

[0055] The heat distribution in the XY plane after the transistor TR starts to generate heat can be considered by replacing the first heating element 31 and the second heating element 32 with the first transistor TR1 and the second transistor TR2, respectively, in Figure 6. That is, in the fourth configuration example, to detect an overheated state of the transistor TR, the temperature sensor 40 needs to be placed at least closer to the second side SD2 than the center of the region AR in the X direction, and to quickly detect an overheated state of the transistor TR, it is desirable to place the temperature sensor 40 in the region AR between the center of the long side LS in the X direction and the first region side ASD1.

[0056] Fig. 11 shows a detailed fifth configuration example of the integrated circuit device 20. In the integrated circuit device 20 of the fifth configuration example, dummy metal wiring or dummy pads are provided in the upper layer of the heating element 30 or the transistor TR in the integrated circuit devices 20 of the first to fourth configuration examples. Note that 120 in Fig. 11 represents a terminal, which corresponds to the PIN in Figs. 6 and 7.

[0057] The metal wiring 110 is provided as a dummy. The metal wiring 110 can be realized by, for example, but not limited to, a metal such as aluminum or an aluminum alloy. The metal wiring 110 can be realized by a method of forming a wiring pattern by etching after forming a solid metal film, or by a method of processing the base of the wiring pattern and then embedding metal. Note that the metal wiring 110 may be used for purposes such as driving an actual circuit.

[0058] The pads 108 are provided as dummy pads. The pads 108 can be made of, for example, but not limited to, a metal such as aluminum or an aluminum alloy. The pads 108 can be made by forming a wiring pattern by etching a solid metal film after it has been formed, or by processing the base of the wiring pattern and then embedding metal therein. The pads 108 may also be used for purposes such as driving an actual circuit.

[0059] 1 is a schematic diagram of the integrated circuit device 20 in FIG. 1, viewed from a cross section in the XZ plane. In the +Z direction as viewed from the heating element 30, there are metal wiring, polycrystalline silicon doped with impurities, insulating films such as silicon oxide, etc. In the -Z direction as viewed from the heating element 30, there is basically single-crystalline silicon doped with impurities.

[0060] An insulating film such as silicon oxide in the +Z direction viewed from the heating element 30 generally has a lower thermal conductivity than metal wiring or polycrystalline silicon, so in a structure without metal wiring in the +Z direction as shown in Fig. 12, which is a comparative example of the fifth configuration example, heat from the heating element 30 or transistor TR will stagnate. For this reason, by arranging metal wiring or pads with high thermal conductivity as in the fifth configuration example shown in Fig. 11, it is possible to eliminate the situation where heat stagnates in the +Z direction.

[0061] In this embodiment, the heat generating element 30 may be divided into three or more pieces. For example, if the heat generating element 30 is a transistor TR, the transistor TR may be divided into three or more pieces. As the number of divisions of the heat generating element increases, the area in contact with the outside increases, improving the heat dissipation performance from the heat generating element 30 and the transistor TR.

[0062] 13 is a diagram showing a specific example of the circuit configuration of an integrated circuit device 20 and an electronic device 10 including the integrated circuit device 20. The electronic device 10 includes an external transistor 11, a load 300, and the integrated circuit device 20. Below, an example in which the external transistor 11 is an N-type transistor will be mainly described, but the present invention is not limited to this, and the external transistor 11 may also be a P-type transistor.

[0063] The electronic device 10 may be, for example, a printing device, a video projection device, a wearable device, an information processing device, a display device, a television receiver, or a portable information terminal, but is not limited to these and may be various devices that use a DC power supply voltage VCC.

[0064] The external transistor 11 is provided between the power supply node NVCC and the load 300. Specifically, the drain of the external transistor 11 is connected to the power supply node NVCC, and the source is connected to a node NLOAD of the load 300. The external transistor 11 is a so-called power transistor, which supplies the power supply voltage VCC to the load 300 when it is on, and cuts off the supply of the power supply voltage VCC to the load 300 when it is off.

[0065] A power supply voltage VCC is supplied to the power supply node NVCC from a DC power supply. The DC power supply may be, for example, an AC-DC converter, a DC-DC converter, or a battery. Although not shown in FIG. 13, these DC power supplies may also be included in the electronic device 10.

[0066] The load 300 is a circuit that operates on a power supply voltage VCC supplied to a node NLOAD via an external transistor 11. The node NLOAD is a power supply node for the load 300. The load 300 is, for example, a power supply stabilization capacitor provided between the node NLOAD and a ground voltage GND, a processing device that executes processing in the electronic device 10, or a motor driver that drives a motor. However, the load 300 is not limited to these and may be a circuit that realizes various functions in the electronic device 10.

[0067] The integrated circuit device 20 controls the supply of the power supply voltage VCC to the load 300 by outputting a gate control voltage DRV to the gate of the external transistor 11. The integrated circuit device 20 includes a regulator 165, a charge pump circuit 200, a charging circuit 180, a discharging circuit 190, and terminals TCHP1, TCHP, TVCC, TDRV, TVCO, and TDIS. The integrated circuit device 20 is, for example, an integrated circuit device in which a plurality of circuit elements are integrated on a semiconductor substrate. Each terminal is, for example, a pad of the integrated circuit device or a terminal of a package that houses the integrated circuit device.

[0068] The regulator 165 outputs a regulated voltage VRG by regulating the power supply voltage VCC from the power supply node NVCC. A terminal TVCC is connected to the power supply node NVCC, and the power supply voltage VCC is supplied to the regulator 165 via the terminal TVCC. The regulator 165 is a step-down regulator that outputs a regulated voltage VRG that is lower than the power supply voltage VCC. The regulator 165 is, for example, a linear regulator, but is not limited to this and may be any of various types of DC-DC converters.

[0069] The charge pump circuit 200 outputs a gate control voltage DRV=VCO+VRG that is higher than the source voltage VCO by boosting the voltage based on the regulated voltage VRG with the source voltage VCO of the external transistor 11 as a reference. As a result, the external transistor 11 is turned on when the charge pump circuit 200 is operating, and the power supply voltage VCC is supplied to the load 300 via the external transistor 11.

[0070] Specifically, one end of the boost capacitor 12 is connected to the terminal TCHP1, the other end of the boost capacitor 12 is connected to the terminal TCHP2, and the gate of the external transistor 11 is connected to the terminal TDRV. The charge pump circuit 200 includes a drive circuit 160 and a gate control circuit 170. The drive circuit 160 outputs a drive signal CHP1 to one end of the boost capacitor 12 based on a regulated voltage VRG. A signal CHP2 from the other end of the boost capacitor 12 is input to the gate control circuit 170. The gate control circuit 170 outputs a gate control voltage DRV=VCO+VRG based on the signal CHP2 and the source voltage VCO of the external transistor 11. The gate control voltage DRV is output to the gate of the external transistor 11 via the terminal TDRV.

[0071] If the external transistor 11 is a P-type transistor, the source voltage of the external transistor 11 is the power supply voltage VCC. The charge pump circuit 200 may output a gate control voltage DRV=VCC-VRG that is lower than the power supply voltage VCC by stepping down the power supply voltage VCC based on the regulated voltage VRG.

[0072] The transistor 189 is provided between the power supply node NVCC and the node NLOAD. Specifically, the transistor 189 is a P-type transistor, with its source connected to the terminal TVVCC and its drain connected to the terminal TVCO. The terminal TVCO is a terminal connected to the source of the external transistor 11 and the node NLOAD. Note that while FIG. 13 illustrates an example in which the transistor 189 is a P-type transistor, the transistor 189 may also be an N-type transistor. The transistor 189 in FIG. 13 corresponds to the charging transistor TRC in FIG. 14, which will be described later.

[0073] Temperature sensor 188 detects the temperature of transistor 189 and outputs a temperature detection voltage VTA whose voltage value changes according to the detected temperature. Temperature sensor 188 is disposed near transistor 189 so as to be able to detect the temperature of transistor 189. Temperature sensor 188 is, for example, a temperature sensor that utilizes the temperature dependency of the forward voltage of a PN junction, but is not limited to this and various types of temperature sensors may be used.

[0074] The control circuit 185 controls the transistor current by controlling the gate voltage GTA of the transistor 189. The transistor current in the charging circuit 180 is the current that flows through the transistor 189. The control circuit 185 controls the transistor current based on the temperature detection voltage VTA to prevent breakdowns due to heat generation in the transistor 189. The control circuit 185 also controls the transistor current to flow as much as possible within a range that allows the transistor 189 to be kept at or below the allowable temperature.

[0075] The discharge circuit 190 discharges the capacitance of the node NLOAD of the load 300 after the external transistor 11 is turned off. This prevents problems caused by the voltage held in the capacitance of the node NLOAD or the charge accumulated in the capacitance of the node NLOAD after the external transistor 11 is turned off. The discharge circuit 190 includes a transistor 199, a temperature sensor 198, and a control circuit 195.

[0076] The transistor 199 is provided between the node NLOAD and the ground node. Specifically, the transistor 199 is an N-type transistor, and has a source connected to the ground node and a drain connected to the terminal TDIS. The terminal TDIS is a terminal connected to the node NLOAD of the load 300. The transistor 199 in FIG. 13 corresponds to a discharge transistor TRD in FIG. 14, which will be described later.

[0077] Temperature sensor 198 detects the temperature of transistor 199 and outputs a temperature detection voltage VTB whose voltage value changes in response to the detected temperature. Temperature sensor 198 is disposed near transistor 199 so as to be able to detect the temperature of transistor 199. Temperature sensor 198 is, for example, a temperature sensor that utilizes the temperature dependency of the forward voltage of a PN junction, but is not limited to this and may be any of various types of temperature sensors. Temperature sensors 188 and 198 in FIG. 13 correspond to temperature sensor 40 in FIGS. 5 and 10 and first temperature sensor 41 and second temperature sensor 42 in FIG. 14.

[0078] The control circuit 195 controls the transistor current by controlling the gate voltage GTB of the transistor 199. The transistor current in the discharge circuit 190 is the current flowing through the transistor 199. The control circuit 195 controls the transistor current based on the temperature detection voltage VTB to prevent breakdowns due to heat generation in the transistor 199. The control circuit 195 also controls the transistor current to flow as much as possible within a range that keeps the transistor 199 at or below an allowable temperature. Details of this control will be described later. The control circuits 185 and 195 in FIG. 13 correspond to the control circuit 50 in FIGS. 1, 5, 8, 9, 10, and 14.

[0079] Fig. 14 shows a detailed sixth configuration example of the integrated circuit device 20. Fig. 14 corresponds to the configuration example of Fig. 13. The integrated circuit device 20 includes a charge transistor TRC, a discharge transistor TRD, a first temperature sensor 41, a second temperature sensor 42, and a control circuit 50.

[0080] The charging transistor TRC passes a current to charge, for example, the load 300. Heat is generated when a current flows through the charging transistor TRC. The charging transistor TRC includes a first charging transistor TRC1 and a second charging transistor TRC2.

[0081] Specifically, the charging transistor TRC includes a first charging transistor TRC1 and a second charging transistor TRC2 arranged alongside the first charging transistor TRC1 in the Y direction with a first area AR1 sandwiched therebetween. The first charging transistor TRC1 and the second charging transistor TRC2 are arranged a predetermined distance apart in the Y direction. The first charging transistor TRC1 has a first long side LSC1 and a first short side SSC1. The second charging transistor TRC2 has a first long side LSC2 and a first short side SSC2. In the first charging transistor TRC1, the length of the first long side LSC1 is preferably at least twice the length of the first short side SSC1. In the second charging transistor TRC2, the length of the first long side LSC2 is preferably at least twice the length of the first short side SSC2. The distance DL is greater than the distance DS.

[0082] The first charging transistor TRC1 and the second charging transistor TRC2 are realized by, for example, P-type or N-type MOS transistors. Each of the first charging transistor TRC1 and the second charging transistor TRC2 is composed of a plurality of unit transistors arranged so that the longitudinal direction of the gates G1, G2 of each unit transistor is aligned, for example, along the Y direction.

[0083] The first charging transistor TRC1 and the second charging transistor TRC2 are, for example, electrically connected in parallel. The output signal of the control circuit 50 is input to the gate G1 of the first charging transistor TRC1 and the gate G2 of the second charging transistor TRC2. The source S1 of the first charging transistor TRC1 and the source S2 of the second charging transistor TRC2 are, for example, connected to a ground node. The drain D1 of the first charging transistor TRC1 and the drain D2 of the second charging transistor TRC2 are, for example, connected to a power supply voltage node.

[0084] The discharge transistor TRD passes a current to discharge, for example, the load 300. Heat is generated when a current flows through the discharge transistor TRD. The discharge transistor TRD includes a first discharge transistor TRD1 and a second discharge transistor TRD2.

[0085] Specifically, the discharge transistor TRD includes a first discharge transistor TRD1 and a second discharge transistor TRD2 arranged alongside the first discharge transistor TRD1 in the Y direction with a second region AR2 sandwiched therebetween. The first discharge transistor TRD1 and the second discharge transistor TRD2 are arranged a predetermined distance apart in the Y direction. The first discharge transistor TRD1 has a second long side LSD1 and a second short side SSD1. The second discharge transistor TRD2 has a second long side LSD2 and a second short side SSD2. In the first discharge transistor TRD1, the length of the second long side LSD1 is preferably at least twice the length of the second short side SSD1. In the second discharge transistor TRD2, the length of the second long side LSD2 is preferably at least twice the length of the second short side SSD2. The distance DL is greater than the distance DS.

[0086] The first discharge transistor TRD1 and the second discharge transistor TRD2 are realized by, for example, P-type or N-type MOS transistors. Each of the first discharge transistor TRD1 and the second discharge transistor TRD2 is composed of a plurality of unit transistors arranged such that the longitudinal direction of the gates G3 and G4 of each unit transistor is aligned, for example, along the Y direction.

[0087] The first discharge transistor TRD1 and the second discharge transistor TRD2 are electrically connected in parallel, for example. The output signal of the control circuit 50 is input to the gate G3 of the first discharge transistor TRD1 and the gate G4 of the second discharge transistor TRD2. The source S3 of the first discharge transistor TRD1 and the source S4 of the second discharge transistor TRD2 are connected to, for example, a ground node. The drain D3 of the first discharge transistor TRD1 and the drain D4 of the second discharge transistor TRD2 are connected to, for example, a power supply voltage node.

[0088] 5 and 10, and are sensor circuits that detect temperature. The first temperature sensor 41 is provided to detect the temperatures of the first charging transistor TRC1 and the second charging transistor TRC2 and their surroundings. The first temperature sensor 41 is positioned between the center of the first area AR1 and the second side SD2 in the X direction, and is positioned between the first charging transistor TRC1 and the second charging transistor TRC2 in the Y direction.

[0089] Specifically, the outline of the first area AR1 between the first charging transistor TRC1 and the second charging transistor TRC2 has a first area side ASDC1 that is close to the second side SD2 and a second area side ASDC2 that is farther from the second side SD2 than the first area side ASDC1. The first temperature sensor 41 is disposed between the center of the first area AR1 and the first area side ASDC1.

[0090] Here, the first region AR1 refers to the region existing between the first charging transistor TRC1 and the second charging transistor TRC2. The first region side ASDC1 is a side of the outline of the first region AR1, and is the side parallel to the Y direction that is closer to the opposing side of the integrated circuit device 20. The second region side ASDC2 is the side opposite the first region side ASDC1 in the outline of the first region AR1.

[0091] The second temperature sensor 42 is provided to detect the temperatures of the first discharge transistor TRD1, the second discharge transistor TRD2, and their surroundings. The second temperature sensor 42 is located between the center of the second area AR2 and the second side SD2 in the X direction, and between the first discharge transistor TRD1 and the second discharge transistor TRD2 in the Y direction.

[0092] Specifically, the outer shape of the second region AR2 between the first discharge transistor TRD1 and the second discharge transistor TRD2 has a third region side ASDD1 that is close to the second side SD2 and a fourth region side ASDD2 that is farther from the second side SD2 than the third region side ASDD1. The second temperature sensor 42 is disposed between the center of the second region AR2 and the third region side ASDD1.

[0093] Here, the second region AR2 refers to the region existing between the first discharge transistor TRD1 and the second discharge transistor TRD2. The third region side ASDD1 is a side of the outline of the second region AR2, and is the side parallel to the Y direction that is closer to the opposing side of the integrated circuit device 20. The fourth region side ASDD2 is the side opposite the third region side ASDD1 in the outline of the second region AR2.

[0094] The control circuit 50 is a circuit that controls the flow of current through, for example, the charge transistor TRC and the discharge transistor TRD. The control circuit 50 is realized by, for example, a logic circuit. The control circuit 50 controls the gates of the charge transistor TRC and the discharge transistor TRD, which are MOS transistors, to control the current flowing through the charge transistor TRC and the discharge transistor TRD.

[0095] In the first charging transistor TRC1, the length of the first long side LSC1 is approximately twice or more the length of the first short side SSC1. In the second charging transistor TRC2, the length of the first long side LSC2 is approximately twice or more the length of the first short side SSC2.

[0096] In the first discharge transistor TRD1, the length of the second long side LSD1 is approximately twice or more the length of the second short side SSD1. In the second discharge transistor TRD2, the length of the second long side LSD2 is approximately twice or more the length of the second short side SSD2.

[0097] The charge transistor TRC and the discharge transistor TRD are disposed at positions where DL>DS, i.e., in the charge transistor TRC, the distance between the first side SD1 and the first long side LSC1 is longer than the distance between the second side SD2 and the first short sides SSC1 and SSC2, and in the discharge transistor TRD, the distance between the third side SD3 and the second long side LSD2 is longer than the distance between the second side SD2 and the second short sides SSD1 and SSD2.

[0098] Here, as mentioned above, the charge transistor TRC and the discharge transistor TRD each have a long side and a short side, thereby improving heat dissipation, and by arranging the charge transistor TRC and the discharge transistor TRD so that DL>DS, it is possible to reduce heat imbalance inside the integrated circuit device 20.

[0099] The position where the temperature is highest shifts over time from the center of the first area AR1 toward the second side SD2. Therefore, if the position of the first temperature sensor 41 in the X direction is limited to between the center of the first area AR1 and the first area side ASDC1, an overheating state can be detected at an early stage, and performance degradation or malfunction of peripheral elements including the charging transistor TRC can be avoided.

[0100] Similarly, if the position of the second temperature sensor 42 in the X direction is limited to between the center of the second region AR2 and the side ASDD1 of the third region, an overheating state can be detected at an early stage, and performance degradation or malfunction of peripheral elements including the discharge transistor TRD can be avoided.

[0101] As described above, the integrated circuit device of this embodiment includes a heating element and a control circuit that controls the flow of current through the heating element, the heating element having a short side and a long side, and the integrated circuit device having a first side and a second side intersecting the first side, and the distance between the long side of the heating element and the first side of the integrated circuit device is greater than the distance between the short side of the heating element and the second side of the integrated circuit device.

[0102] According to this embodiment, by forming the outer shape of the heating element to have long and short sides, the area of the heating element that comes into contact with the outside is increased, thereby improving heat dissipation. Also, by arranging the heating element so that the distance between the long side of the heating element and the first side of the integrated circuit device is greater than the distance between the short side of the heating element and the second side of the integrated circuit device, it is possible to prevent heat from accumulating in the narrow area between the heating element and the side of the integrated circuit device that is closest to it, thereby preventing heat from being unevenly distributed inside the integrated circuit device.

[0103] In this embodiment, the length of the long side of the heat generating element may be at least twice the length of the short side.

[0104] In this way, if the ratio of the long side length to the short side length of the outer shape of the heat generating element is set to approximately 2 or more, the effect of improving the heat dissipation performance of the heat generating element becomes noticeable.

[0105] Furthermore, in this embodiment, a temperature sensor for detecting the temperature of the heating element may be included, and when the direction along a first side of the integrated circuit device is defined as the X direction and the direction along a second side is defined as the Y direction, the heating element may be composed of a first heating element and a second heating element arranged alongside the first heating element in the Y direction with an area between them. The temperature sensor may be arranged at a position between the center of the area and the second side in the X direction and between the first heating element and the second heating element in the Y direction.

[0106] In this way, the temperature sensor is positioned closer to the second edge than the center of the area where the temperature is highest, making it possible to reliably detect an overheated state and prevent problems caused by overheating of the heating element.

[0107] In addition, in this embodiment, the outline of the area between the first heating element and the second heating element has a first area side that is closer to the second side and a second area side that is farther from the second side than the first area side, and the temperature sensor may be positioned between the center of the area between the first heating element and the second heating element and the first area side.

[0108] For example, the position where the temperature is highest changes over time from the center of the area toward the second edge, so by placing a temperature sensor between the center of the area and the edge of the first area, it is possible to detect an overheating condition at an early stage and prevent malfunctions caused by overheating of the heating element.

[0109] In this embodiment, the heating element may be a transistor whose gate voltage is controlled by a control circuit.

[0110] This improves heat dissipation from the transistor even in a configuration in which the heat generating element is a transistor whose gate voltage is controlled by a control circuit, and also prevents heat from accumulating in the narrow area between the transistor and the closest edge of the integrated circuit device facing it, resulting in uneven distribution of heat within the integrated circuit device.

[0111] In this embodiment, the transistor may be configured by a plurality of unit transistors, each of which has a gate whose longitudinal direction is aligned with the short side.

[0112] This improves the heat dissipation of the transistor even when the transistor is composed of multiple unit transistors whose gate voltages are controlled by a control circuit, and also prevents heat from accumulating in the narrow region between the unit transistor and the closest opposing edge of the integrated circuit device, causing uneven distribution of heat within the integrated circuit device.

[0113] Furthermore, in this embodiment, the integrated circuit device may include a temperature sensor for detecting the temperature of the transistor, and when the direction along a first side of the integrated circuit device is defined as the X direction and the direction along a second side is defined as the Y direction, the transistor may be configured with a first transistor and a second transistor connected in parallel to the first transistor and arranged alongside the first transistor in the Y direction with an area in between. The temperature sensor may be arranged at a position between the center of the area and the second side in the X direction and between the first transistor and the second transistor in the Y direction.

[0114] In this way, by dividing the transistor into a first transistor and a second transistor, the area of the heat-generating element that comes into contact with the outside is increased, improving the heat dissipation performance of the heat-generating element and making it possible to place a temperature sensor in the area between the first transistor and the second transistor.

[0115] In this embodiment, the outline of the region between the first transistor and the second transistor has a first region side that is closer to the second side and a second region side that is farther from the second side than the first region side, and the temperature sensor may be positioned between the center of the region and the first region side.

[0116] For example, after heat generation begins, the location where the temperature becomes highest is the region between the first and second transistors, and this location shifts over time from the center of the region toward the second edge. Therefore, by placing a temperature sensor between the center of the region and the edge of the first region, it is possible to detect an overheating state at an early stage and prevent malfunctions caused by overheating.

[0117] The integrated circuit device of this embodiment includes a charge transistor that charges a load, a discharge transistor that discharges the load, and a control circuit that controls the current flowing through the charge transistor and the current flowing through the discharge transistor. The charge transistor has a first short side and a first long side, the discharge transistor has a second short side and a second long side, and the integrated circuit device has a first side, a second side intersecting the first side, and a third side opposite the first side. The distance between the first long side of the charge transistor and the first side of the integrated circuit device is greater than the distance between the first short side of the charge transistor and the second side of the integrated circuit device. The distance between the second long side of the discharge transistor and the third side of the integrated circuit device is greater than the distance between the second short side of the discharge transistor and the second side of the integrated circuit device.

[0118] According to this embodiment, by giving the charge transistor and discharge transistor an outer shape with long and short sides, the area of contact between the charge transistor and discharge transistor and the outside is increased, thereby improving heat dissipation. Furthermore, by arranging the charge transistor and discharge transistor as in this embodiment, it is possible to prevent heat from accumulating in the narrow area between the charge transistor or discharge transistor and the opposite side of the closest integrated circuit device, which would otherwise cause heat imbalance.

[0119] In this embodiment, the length of the first long side of the charging transistor may be at least twice the length of the first short side, and the length of the second long side of the discharging transistor may be at least twice the length of the second short side.

[0120] In this way, the greater the ratio of the length of the long side to the short side of the charging transistor to the length of the long side to the short side of the discharging transistor, the greater the area of contact between the charging transistor and the discharging transistor and the outside, thereby improving heat dissipation.

[0121] This embodiment also includes a first temperature sensor that detects the temperature of the charging transistor and a second temperature sensor that detects the temperature of the discharging transistor. When the direction along the first edge of the integrated circuit device is defined as the X direction and the direction along the second edge is defined as the Y direction, the charging transistor may be composed of a first charging transistor and a second charging transistor arranged alongside the first charging transistor in the Y direction with a first region sandwiched between them. The discharging transistor may be composed of a first discharging transistor and a second discharging transistor arranged alongside the first discharging transistor in the Y direction with a second region sandwiched between them. The first temperature sensor may be arranged at a first position between the center of the first region and the second edge in the X direction and between the first charging transistor and the second charging transistor in the Y direction. The second temperature sensor may be arranged at a second position between the center of the second region and the second edge in the X direction and between the first discharging transistor and the second discharging transistor in the Y direction.

[0122] In this way, by arranging the first temperature sensor in the charge transistor closer to the second side than the center of the first region where the temperature is highest, it is possible to reliably detect an overheated state and prevent malfunctions caused by overheating of the charge transistor. Also, by arranging the second temperature sensor in the discharge transistor closer to the second side than the center of the second region where the temperature is highest, it is possible to reliably detect an overheated state and prevent malfunctions caused by overheating of the discharge transistor.

[0123] In this embodiment, the outer shape of the first region between the first charging transistor and the second charging transistor may have a first region side close to the second side and a second region side farther from the second side than the first region side, and the outer shape of the second region between the first discharging transistor and the second discharging transistor may have a third region side close to the second side and a fourth region side farther from the second side than the third region side. The first temperature sensor may be disposed between the center of the first region and the first region side, and the second temperature sensor may be disposed between the center of the second region and the third region side.

[0124] For example, after heat generation begins, the position where the temperature becomes highest shifts over time in the charge transistor from the center of the first region toward the second edge, and in the discharge transistor, it shifts over time from the center of the second region toward the second edge. Therefore, by placing a first temperature sensor between the center of the first region and the edge of the first region in the charge transistor and a second temperature sensor between the center of the second region and the edge of the third region in the discharge transistor, it is possible to detect an overheating state at an early stage and prevent malfunctions caused by overheating.

[0125] Although the present embodiment has been described in detail above, those skilled in the art will readily understand that many modifications are possible without substantially departing from the novel features and advantages of the present disclosure. Therefore, all such modifications are intended to be included within the scope of the present disclosure. For example, a term described at least once in the specification or drawings with a different term having a broader or equivalent meaning may be replaced with that different term anywhere in the specification or drawings. Furthermore, all combinations of the present embodiment and modifications are also included within the scope of the present disclosure. Furthermore, the configurations and operations of the integrated circuit device, heating element, transistor, charge transistor, discharge transistor, control circuit, temperature sensor, etc. are not limited to those described in the present embodiment, and various modifications are possible. [Explanation of symbols]

[0126] 10...electronic device, 11...external transistor, 12...boosting capacitor, 20...integrated circuit device, 30...heating element, 31...first heating element, 32...second heating element, 40...temperature sensor, 41...first temperature sensor, 42...second temperature sensor, 50...control circuit, 108...pad, 110...metal wiring, 120...terminal, 160...drive circuit, 165...regulator, 170...gate control circuit, 180...charging circuit, 185...control circuit, 188...temperature sensor, 189...transistor, 190...discharging circuit, 195...control circuit, 198...temperature sensor, 199... Transistor, 200... charge pump circuit, 300... load, AR... region, AR1... first region, AR2... second region, ASD1... first region side, ASD2... second region side, ASDC1... first region side, ASDC2... second region side, ASDD1... third region side, ASDD2... fourth region side, CHP1... drive signal, CHP2... signal, D... drain, D1... drain, D2... drain, D3... drain, D4... drain, DL... distance, DRV... gate control voltage, DS... distance, G... gate, G1... gate, G2... gate, G3... gate, G4... gate, GND... ground Input voltage, GTA...gate voltage, GTB...gate voltage, LS...long side, LS1...long side, LS2...long side, LSC1...first long side, LSC2...first long side, LSD1...second long side, LSD2...second long side, NLOAD...node, NVCC...power supply node, S...source, S1...source, S2...source, S3...source, S4...source, SD1...first side, SD2...second side, SD3...third side, SD4...fourth side, SS...short side, SS1...short side, SS2...short side, SSC1...first short side, SSC2...first short side, SSD1...second short side, SSD2...second short side, TCHP...pin, T CHP1... terminal, TCHP2... terminal, TDIS... terminal, TDRV... terminal, TR... transistor, TR1... first transistor, TR2... second transistor, TRC... charge transistor, TRC1... first charge transistor, TRC2... second charge transistor, TRD... discharge transistor, TRD1... first discharge transistor, TRD2... second discharge transistor, TVCC... terminal, TVCO... terminal, VCC... power supply voltage, VCO... source voltage, VRG... regulated voltage, VTA... temperature detection voltage, VTB... temperature detection voltage, W... gate width

Claims

1. a semiconductor substrate; a heating element provided as a circuit element on the semiconductor substrate; a control circuit provided as a circuit on the semiconductor substrate for controlling current flow to the heating element; A temperature sensor; Including, The outer shape of the heating element has short sides and long sides, the outer shape of the semiconductor substrate has a first side and a second side intersecting the first side, a distance between the long side of the heating element and the first side of the semiconductor substrate is greater than a distance between the short side of the heating element and the second side of the semiconductor substrate; the heating element is a transistor whose gate voltage is controlled by the control circuit, When a direction along the first side of the semiconductor substrate is defined as an X direction and a direction along the second side is defined as a Y direction, the transistor includes a first transistor and a second transistor connected in parallel to the first transistor and arranged side by side with the first transistor along the Y direction across a region; The temperature sensor a temperature sensor for detecting a temperature of the transistor; an integrated circuit device, characterized in that the integrated circuit device is disposed at a position where the position in the X direction is between the center of the region and the second side, and the position in the Y direction is between the first transistor and the second transistor.

2. 2. The integrated circuit device according to claim 1, An integrated circuit device, wherein the length of the long side of the heating element is at least twice the length of the short side.

3. 2. The integrated circuit device according to claim 1, The integrated circuit device is characterized in that the transistor is composed of a plurality of unit transistors, each of which has a gate whose longitudinal direction is aligned with the short side.

4. 2. The integrated circuit device according to claim 1, an outer shape of the region between the first transistor and the second transistor has a first region side that is close to the second side and a second region side that is farther from the second side than the first region side; The integrated circuit device is characterized in that the temperature sensor is disposed between the center of the region and the side of the first region.

5. a semiconductor substrate; a charging transistor provided as a circuit element on the semiconductor substrate for charging a load; a discharge transistor provided as a circuit element on the semiconductor substrate, the discharge transistor discharging the load; a control circuit provided as a circuit on the semiconductor substrate, for controlling a current flowing through the charge transistor and a current flowing through the discharge transistor; a first temperature sensor for detecting the temperature of the charging transistor; a second temperature sensor for detecting the temperature of the discharge transistor; Including, The outer shape of the charging transistor has a first short side and a first long side, The discharge transistor has an outer shape having a second short side and a second long side, the outer shape of the semiconductor substrate has a first side, a second side intersecting the first side, and a third side opposite the first side; a distance between the first long side of the charging transistor and the first side of the semiconductor substrate is greater than a distance between the first short side of the charging transistor and the second side of the semiconductor substrate; a distance between the second long side of the discharge transistor and the third side of the semiconductor substrate is greater than a distance between the second short side of the discharge transistor and the second side of the semiconductor substrate; When a direction along the first side of the semiconductor substrate is defined as an X direction and a direction along the second side is defined as a Y direction, the charging transistor includes a first charging transistor and a second charging transistor arranged alongside the first charging transistor along the Y direction with a first region interposed therebetween, the discharge transistor is composed of a first discharge transistor and a second discharge transistor arranged alongside the first discharge transistor along the Y direction with a second region interposed therebetween, The first temperature sensor the first region is disposed at a first position in the X direction between the center of the first region and the second side, and the second region is disposed at a first position in the Y direction between the first charging transistor and the second charging transistor; The second temperature sensor is an integrated circuit device, characterized in that it is arranged at a second arrangement position whose position in the X direction is a position between the center of the second region and the second edge, and whose position in the Y direction is a position between the first discharge transistor and the second discharge transistor.

6. 6. The integrated circuit device according to claim 5, an integrated circuit device, characterized in that the length of the first long side of the charging transistor is at least twice the length of the first short side, and the length of the second long side of the discharging transistor is at least twice the length of the second short side.

7. 6. The integrated circuit device according to claim 5, an outer shape of the first region between the first charging transistor and the second charging transistor has a first region side that is close to the second side and a second region side that is farther from the second side than the first region side; an outer shape of the second region between the first discharge transistor and the second discharge transistor has a third region side that is close to the second side and a fourth region side that is farther from the second side than the third region side; the first temperature sensor is disposed between the center of the first region and a side of the first region; The integrated circuit device is characterized in that the second temperature sensor is disposed between the center of the second region and a side of the third region.

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