Processing equipment

Abstract

To provide a processing device, which processes a wafer while automatically changing settings of a plurality of processing elements.SOLUTION: A processing device 1 comprises: a mechanism 61 that processes a wafer held on a table holding surface 300 while fitting a processing tool 614 to a tip of a spindle and rotating the tool; a mechanism 60 that moves the processing mechanism 61 in a direction perpendicular to the holding surface 300; a processing element setting part 80 that sets a plurality of processing elements for processing the wafer; a stage 150 on which a cassette 157 storing the plurality of wafers is placed; a wafer conveying mechanism 4; and a processing element selecting part 81 that selects an arbitrary processing element from the plurality of processing elements set by the processing element setting part 80. The processing element setting part 80 comprises a range setting portion 802 that sets a range of a lower limit value and an upper limit value, on one processing element selected by the processing element selecting part 81, and a partition-number setting part 804 that sets partition numbers of the range. The device changes a setting of the selected one processing element, on the basis of a value for each partition including the lower limit value and the upper limit value by which the range is partitioned and performs processing for each wafer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a processing apparatus for processing a workpiece such as a semiconductor wafer. [Background technology]

[0002] As disclosed in Patent Document 1, for example, a grinding device for grinding wafers sets processing elements (processing conditions) in a control means that controls the entire device, places a cassette containing multiple wafers on a cassette stage, carries the wafers removed from the cassette onto a chuck table, and grinds the wafers held by the chuck table one after another with a grinding wheel. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-091035 Summary of the Invention [Problem to be solved by the invention]

[0004] When grinding wafers by changing the settings of the processing elements, after the grinding process is completed, the operator selects the processing element to be changed, inputs the settings of the selected processing element into the control means using a touch panel or the like, and performs the grinding process. Therefore, it is necessary to repeatedly perform the grinding process and change the settings of the processing elements, and for example, to find the processing element that will maximize the bending strength of the wafer after grinding, it is necessary to carry out multiple processing elements, which places a heavy burden on the operator.

[0005] Therefore, in a processing device such as a grinding device, there is a problem in that it is possible to automatically change the settings of a plurality of processing elements and process wafers without an operator present. [Means for solving the problem]

[0006] In order to solve the above problems, the present invention provides a wafer processing mechanism including a chuck table that holds a wafer on a holding surface, a processing mechanism that rotates a spindle having a processing tool attached to the tip of the spindle to process the wafer held on the holding surface, a moving mechanism that moves the processing mechanism in a direction perpendicular to the holding surface, and a wafer processing mechanism. of processing in Multiple Processing The conditions are stored A processing device including a processing element setting unit, a cassette stage for placing a cassette containing a plurality of wafers, and a transport mechanism for transporting wafers between the cassette and the holding surface, wherein the plurality of processing elements set in the processing element setting unit are conditions Any processing from conditions The processing element setting unit is provided with a processing element selection unit that selects one of the processing elements selected by the processing element selection unit. conditions The present invention provides a range setting unit that sets a range by a lower limit value and an upper limit value, and a division number setting unit that sets the number of divisions by which the range is divided, and performs the processing of the selected one of the processed images by dividing the range by the number of divisions and using values for each division including the lower limit value and the upper limit value. conditions This is a processing device that processes each wafer by changing the settings.

[0007] For example, the processing device according to the present invention may Entered by the operator, The cassette is provided with a number setting unit that sets the number of wafers stored in the cassette, or a number recognition unit that recognizes the number of wafers stored in the cassette, and when the number set in the number setting unit or the number recognized by the number recognition unit is divided by the division number plus 1 and the number is equal to or greater than 1, the processing element setting unit rounds down the decimal point of the divided number to an integer and performs the selected processing for each integer. conditions Change the settings and process the wafer.

[0008] For example, the processing device according to the present invention includes a notification unit that notifies a wafer request when the divisor calculated by the processing element setting unit is less than one.

[0009] For example, the processing device according to the present invention sets a first range of the speed at which the processing mechanism approaches the holding surface by the moving mechanism in the range setting unit, sets a first division number in the division number setting unit, and changes the first setting for the speed at which the processing mechanism approaches the holding surface by the value for each division obtained by dividing the first range by the first division number.

[0010] For example, the processing device of the present invention moves the processing mechanism closer to the holding surface using the moving mechanism, processes the wafer held on the holding surface, and then sets a second range of speed at which the processing tool is moved away from the wafer held on the holding surface by the moving mechanism in the range setting unit, sets a second division number in the division number setting unit, and changes the second setting for the speed at which the processing tool is moved away from the wafer held on the holding surface by values for each division obtained by dividing the second range by the second division number.

[0011] For example, the processing device of the present invention moves the processing mechanism closer to the holding surface using the moving mechanism, processes the wafer held on the holding surface, and then sets a third range of distance for moving the processing tool away from the wafer held on the holding surface by the moving mechanism in the range setting unit, sets a third division number in the division number setting unit, and changes the third setting of the distance for moving the processing tool away from the wafer held on the holding surface by values for each division obtained by dividing the third range by the third division number.

[0012] For example, the processing device of the present invention uses the moving mechanism to bring the processing mechanism closer to the holding surface, stops the approach of the processing mechanism once a predetermined amount of wafer held on the holding surface has been processed, sets a fourth range of the time for processing the wafer with the processing tool after the approach has been stopped in the range setting unit, sets a fourth division number in the division number setting unit, and changes the fourth setting for the time for processing the wafer with the processing tool after the approach has been stopped by values for each division obtained by dividing the fourth range by the fourth division number.

[0013] For example, a processing device according to the present invention includes a table rotation mechanism that rotates the chuck table, sets a fifth range of the rotation speed of the chuck table in the range setting unit, sets a fifth division number in the division number setting unit, and changes the fifth setting for the rotation speed of the chuck table using values for each division obtained by dividing the fifth range by the fifth division number.

[0014] For example, the processing device according to the present invention sets a sixth range of the rotational speed of the spindle in the range setting unit, sets a sixth division number in the division number setting unit, and changes the sixth setting for the rotational speed of the spindle by values for each division obtained by dividing the sixth range by the sixth division number.

[0015] For example, the processing apparatus according to the present invention processes a wafer using processing elements that combine the first setting, the second setting, the third setting, the fourth setting, the fifth setting, and the sixth setting. [Effects of the Invention]

[0016] The processing device of the present invention stores multiple wafers in a cassette, sets the range of processing elements using a range setting unit, divides the processing elements in the set range into a predetermined number of equal divisions using a division number setting unit, and processes each wafer by switching the processing elements using the processing element setting unit.This makes it possible to process wafers for each division unit using multiple processing elements even without human intervention, and for example, when setting conditions for processing elements (finding appropriate processing elements), there is no need for an operator to change the processing elements, thereby reducing the burden on the operator. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 1 is a perspective view of a grinding device, which is an example of a processing device. [Figure 2]FIG. 10 is an explanatory diagram showing the types of processing elements, and showing, as processing elements, the Z-axis feed speed of the grinding mechanism, the escape cut movement speed of the grinding mechanism, the escape cut movement distance of the grinding mechanism, the spark out execution time by the grinding mechanism, the spindle rotation speed in the grinding mechanism, and the rotation speed of the chuck table. [Figure 3] These are three graphs showing the relationship between the grinding time and the height of the grinding mechanism when grinding a wafer, where the Z-axis feed rate, which is one of the selected processing elements, is set to 0.3 μm / sec, 0.4 μm / sec, and 0.5 μm / sec, respectively. DETAILED DESCRIPTION OF THE INVENTION

[0018] The wafer 90 shown in Fig. 1 is a circular semiconductor wafer made of, for example, a silicon base material, and a front surface 900 of the wafer 90, which faces downward in Fig. 1, has a plurality of devices formed thereon and is protected by a protective tape (not shown). The rear surface 903 of the wafer 90, which faces upward, is the processing surface on which grinding is performed. Note that the wafer 90 is not limited to a silicon wafer, and may be made of gallium arsenide, sapphire, ceramics, resin, gallium nitride, silicon carbide, or the like, or may be a wafer on which no devices are formed.

[0019] 1 is an apparatus that grinds a wafer 90 held on a chuck table 30 using a processing mechanism 61. The front (-Y direction side) of a base 10 of the processing apparatus 1 (hereinafter referred to as the grinding apparatus 1) is a loading / unloading area where the wafer 90 is loaded / unloaded onto the chuck table 30, and the rear (+Y direction side) of the base 10 is a processing area where the wafer 90 held on the chuck table 30 is ground by a processing mechanism 61 (hereinafter referred to as the grinding mechanism 61). The processing apparatus 1 is a so-called fully automatic grinder. The processing apparatus according to the present invention is not limited to a single-axis type processing mechanism 61 such as the grinding apparatus 1, but may be a two-axis or more grinding apparatus that includes a rough grinding mechanism and a finish grinding mechanism and that can position the wafer 90, which is suction-held on the chuck table 30 by a rotating turntable, below the rough grinding mechanism or the finish grinding mechanism. Also, the processing apparatus 1 may be a polishing apparatus that polishes the wafer 90 with a polishing pad, a cutting tool cutting apparatus that cuts the wafer 90 with a rotating cutting tool, or a cutting apparatus that dices the wafer 90 with a cutting blade.

[0020] A first cassette stage 150 and a second cassette stage 151 are provided on the front side (-Y direction side) of the base 10. A first cassette 157, which stores a plurality of unprocessed wafers 90 in a shelf-like manner, is placed on the first cassette stage 150, and a second cassette 158, which stores a plurality of processed wafers 90 in a shelf-like manner, is placed on the second cassette stage 151. For example, the first cassette 157 stores 25 wafers 90, one on each shelf inside.

[0021] A robot 40 is disposed behind the opening on the +Y direction side of the first cassette 157, which carries out unprocessed wafers 90 from the first cassette 157 and carries processed wafers 90 into the second cassette 158. The robot 40 is equipped with a robot hand 400 capable of suction-holding the wafers 90, and an articulated arm 401 which can move the robot hand 400 up and down in the Z-axis direction and can pivot and move linearly within a horizontal plane (within the X-axis and Y-axis plane).

[0022] A number recognition unit 49 is provided on the articulated arm 401 of the robot 40 to recognize the number of wafers 90 stored in, for example, the first cassette 157. The number recognition unit 49 is a reflective optical sensor including a light-emitting unit 490 that horizontally irradiates inspection light toward the tip of the robot hand 400 and a light-receiving unit 491. The unprocessed wafers 90 carried out from the first cassette 157 are carried out in order, for example, from the top (or bottom) shelf of the first cassette 157 to the bottom (or top) shelf. Therefore, the number recognition unit 49 detects that the reflected light from the wafers 90 disappears and the amount of light received by the light-receiving unit 491 decreases on an empty shelf after the wafers 90 have been carried out, and can recognize the number of wafers 90 stored in the first cassette 157 from the number of shelves on that shelf. The number recognition unit 49 transmits information about the recognized number of wafers 90 in the first cassette 157 to the processing element setting unit 80 shown in FIG.

[0023] Even if the order of use of the multiple wafers 90 stored in the first cassette 157 is not from the top to the bottom, the number recognition unit 49 can recognize the number of wafers 90 in the first cassette 157 from the number of shelves at which the amount of light received by the light receiving unit 491 has decreased, for example, by repeatedly irradiating / receiving detection light while descending in the Z-axis direction from the top to the bottom of the first cassette 157 at intervals between shelves. The number recognition unit 49 may be configured to recognize the number of wafers 90 stored inside the first cassette 157 from an image of the inside of the first cassette 157 captured by a camera or the like.

[0024] A temporary placement area 152 is provided adjacent to the robot 40, and an alignment unit 153 is disposed in the temporary placement area 152. The alignment unit 153 aligns (centers) the unprocessed wafer 90, which is carried out from the first cassette 157 and placed in the temporary placement area 152, to a predetermined position using a diameter-reducing alignment pin.

[0025] An optical wafer ID reader 159 including a camera or the like is disposed above the temporary placement area 152. The wafer ID reader 159 reads the wafer ID (recognition mark), which is an individual identification number formed on the wafer 90, and transmits the information to the control unit 8, which controls the entire apparatus. In addition, the wafer ID formed on the wafer 90 may be printed on the outer peripheral portion of the front surface 900 of the wafer 90 where no devices are formed so that it can be read even after grinding.Therefore, when the back surface 903 of the wafer 90 is facing upward in the temporary placement area 152, the wafer ID reading unit 159 may read the wafer ID of the wafer 90 by passing through the wafer 90 from above using an infrared camera or the like.

[0026] For example, if the plurality of wafers 90 stored in the first cassette 157 are all of the same type, the controller 8 recognizes the shelf number of the first cassette 157 on which the wafer 90 was stored when it was carried out of the first cassette 157 and processed, and therefore it becomes possible to ultimately recognize the processing elements in the grinding process performed on the wafer 90 by linking them to the shelf number. In this case, the wafer ID reader 159 does not need to be provided in the grinding apparatus 1.

[0027] On the other hand, if the first cassette 157 contains a mixture of different types of wafers 90, the wafer 90 that is removed from the first cassette 157 and processed has its wafer ID read by the wafer ID reading unit 159 before being subjected to grinding, and the processing elements in the grinding process performed on the wafer 90 can be linked to the wafer ID and ultimately recognized by the control unit 8. Furthermore, even if the multiple wafers 90 stored in the first cassette 157 are all of the same type, the wafer ID is read by the wafer ID reading unit 159 before grinding, and the processing elements in the grinding process performed on the wafer 90 are linked to the wafer ID and ultimately recognized by the control unit 8.As a result, when an operator removes the processed wafer 90 from the second cassette 158 and checks it, he or she can refer to the wafer ID of the wafer 90 being checked, recognize the processing conditions for that wafer 90 displayed on a monitor (not shown) of the grinding device 1, and check whether the grinding process of the wafer 90 is going well or not.

[0028] 1, a carry-in arm 41, which is configured with a suction pad or the like and which carries the wafer 90 onto the chuck table 30, is disposed near the temporary placement area 152. Next to the carry-in arm 41, a carry-out arm 42 is disposed which carries the wafer 90 out of the chuck table 30. In this embodiment, the robot 40, the carry-in arm 41, and the carry-out arm 42 form a transfer mechanism 4 which transfers the wafer 90 between the first cassette 157 (second cassette 158) and the holding surface 300 of the chuck table 30.

[0029] As shown in FIG. 1, a single-wafer spinner cleaning mechanism 156 is disposed in a position close to the unloading arm 42, for cleaning the processed wafers 90 transported by the unloading arm 42. The spinner cleaning mechanism 156 holds the wafers 90 on a spinner table and sprays cleaning water onto the upper surface (rear surface 903) of the wafers 90 from a swivel nozzle that can swivel above the held wafers 90 to clean them. The wafers 90 are then dried, for example, by spraying air from the swivel nozzle. The wafers 90 that have been cleaned and dried by the spinner cleaning mechanism 156 are transported into a second cassette 158 by the robot 40.

[0030] 1, the chuck table 30, which holds by suction the unprocessed wafer 90 transported by the carry-in arm 41, has, for example, a circular outer shape and an upper surface made of a porous material as a holding surface 300. The holding surface 300 is connected to a suction source such as a vacuum generator (not shown).

[0031] 1, the chuck table 30 is surrounded by a cover, and can be moved back and forth in the Y-axis direction on the base 10 by a table feed mechanism 37 disposed under the cover and a bellows cover connected to the cover and extending and contracting in the Y-axis direction. Specifically, in the table feed mechanism 37, when a motor 372 rotates a ball screw 370, a movable plate 373 is guided by a guide rail 371 and moves linearly in the Y-axis direction, thereby allowing the chuck table 30 disposed on the movable plate 373 via a table rotation mechanism 35 to move linearly in the Y-axis direction.

[0032] The table rotation mechanism 35 includes a spindle 350 whose axial direction is the Z-axis direction perpendicular to the holding surface 300 , a motor 351 that rotates the spindle 350 , and an encoder 353 that detects the rotation speed of the motor 351 .

[0033] 1, a column 100 is erected on the rear side of the base 10, and a moving mechanism 60 is disposed in front of the column 100 to move the grinding mechanism 61 in the Z-axis direction, which is a direction perpendicular to the holding surface 300 of the chuck table 30. The moving mechanism 60 is composed of a ball screw 600 whose axial direction is the Z-axis direction, a pair of guide rails 601 extending parallel to the ball screw 600, a motor 602 connected to the ball screw 600 to rotate the ball screw 600, a lift plate 603 whose internal nut is threaded onto the ball screw 600 and whose sides are in sliding contact with the pair of guide rails 601, and an encoder 604 that detects the number of rotations (rotational speed) of the motor 602. When the motor 602 rotates the ball screw 600, the lift plate 603 is guided by the guide rails 601 and moves back and forth in the Z-axis direction, and the grinding mechanism 61 attached to the lift plate 603 also moves back and forth in the Z-axis direction.

[0034] The grinding mechanism 61 (processing mechanism 61) that grinds the wafer 90 held by suction on the chuck table 30 includes a spindle 610 whose axial direction is the Z-axis direction perpendicular to the holding surface 300, a housing 611 that rotatably supports the spindle 610, a motor 612 that rotates and drives the spindle 610, a mount 613 attached to the lower end of the spindle 610, a grinding wheel 614 that is a processing tool detachably connected to the mount 613, and an encoder 615 that detects the rotational speed of the motor 612.

[0035] The grinding wheel 614 includes an annular wheel base and grinding stones 616 having a substantially rectangular parallelepiped outer shape and arranged in a plurality of annular segments on the underside of the wheel base. The grinding stones 616 may be arranged in a continuous manner with no gaps between the grinding stone chips.

[0036] For example, a grinding water flow path extending in the Z-axis direction is formed inside the spindle 610, and the grinding water supplied to the spindle 610 from a grinding water supply means (not shown) is sprayed out diagonally downward and outward from the opening at the lower end of the grinding water flow path toward the grinding wheel 614, reaches the contact point between the grinding stone 616 and the wafer 90, and cools and cleans the contact point.

[0037] As shown in FIG. 1, a thickness measurement gauge 38 is disposed in the vicinity of the grinding mechanism 61 that has been lowered to the height position for grinding the wafer 90, for example, to measure the thickness of the wafer 90 in a contact manner during grinding.

[0038] The grinding apparatus 1 according to the present invention includes a control unit 8 that controls the entire apparatus. The control unit 8 is composed of a CPU that performs arithmetic processing according to a control program, a storage medium such as a memory, and the like. The control unit 8 is electrically connected to a motor 602 (e.g., a servo motor 602) of the moving mechanism 60 via, for example, a wired or wireless communication path. That is, an operation signal is supplied to the servo motor 602 from an output interface of the control unit 8, which also functions as a servo amplifier, and the rotation speed of the servo motor 602 detected by an encoder 604 is output as an encoder signal to an input interface of the control unit 8. The control unit 8 then receives the rotation speed of the servo motor 602 as an encoder signal, feedback-controls the Z-axis feed speed of the grinding mechanism 61 and the movement distance of the grinding mechanism 61, which are controlled by the moving mechanism 60, and also controls the positioning of the grinding mechanism 61 at a desired height.

[0039] Using a technique similar to that described above, the control unit 8 performs feedback control of the table rotation mechanism 35 that rotates the chuck table 30, thereby controlling the rotation speed of the chuck table 30, and can also perform feedback control of the rotation speed of the spindle 610 in the grinding mechanism 61.

[0040] 1, the grinding apparatus 1 includes a processing element setting unit 80 that sets a plurality of processing elements for processing a wafer 90, and a processing element selection unit 81 that selects any processing element (one or more) from the plurality of processing elements set in the processing element setting unit 80. The processing element setting unit 80 also includes a range setting unit 802 that sets a range using a lower limit value and an upper limit value for one processing element selected by the processing element selection unit 81, and a division number setting unit 804 that sets the number of divisions that divides the range equally. In this embodiment, the processing element setting unit 80 and the processing element selection unit 81 are incorporated in the control unit 8 and execute a predetermined program.

[0041] A plurality of processing elements (processing conditions for processing the wafer 90) are input and set in advance by an operator via a touch panel (not shown) or the like provided on the grinding device 1, and are stored in the memory area of the processing element setting unit 80. In this embodiment, there are, for example, six processing elements described below. When grinding the wafer 90, the processing element selection unit 81 selects one or more changeable processing elements set in the processing element setting unit 80 from the six processing elements.

[0042] For example, when the processing element selected by the processing element selection unit 81 is the speed at which the moving mechanism 60 moves the grinding mechanism 61 toward the holding surface 300 of the chuck table 30 (the Z-axis feed speed shown in FIG. 2), the grinding device 1 sets a first range (lower and upper limits) of the Z-axis feed speed, which is the processing element, in the range setting unit 802, sets a first division number in the division number setting unit 804, and changes the first setting of the processing element setting unit 80 for the speed at which the grinding mechanism 61 moves toward the holding surface 300 of the chuck table 30, using values for each division including the lower and upper limits obtained by dividing the first range by the first division number. When the first setting is changed, the operating signal supplied to the servo motor 602 of the moving mechanism 60 from the output interface of the control unit 8, which also functions as a servo amplifier, is increased or decreased. The first range may be set in the range setting unit 802 by the range setting unit 802 itself, or may be input by an operator via input means such as a touch panel (not shown) provided in the grinding apparatus 1. The first division number may be set in the division number setting unit 804 by the division number setting unit 804 itself, or may be input by an operator via input means such as a touch panel (not shown) provided in the grinding apparatus 1.

[0043] For example, in the grinding apparatus 1, when the processing element selected by the processing element selection unit 81 is a speed at which the moving mechanism 60 lowers the grinding mechanism 61 to approach the holding surface 300 of the chuck table 30, processes the wafer 90 held on the holding surface 300, and then the moving mechanism 60 raises the grinding wheel 614 away from the wafer 90 held on the holding surface 300 (the so-called escape cut movement speed shown in FIG. 2 ), the grinding apparatus 1 sets a second range (lower and upper limits) of the escape cut movement speed, which is the processing element, in the range setting unit 802, sets a second division number in the division number setting unit 804, and changes the second setting of the processing element setting unit 80 for the escape cut movement speed by a value for each division including the lower limit and the upper limit obtained by dividing the second range by the second division number. When the second setting is changed, the operating signal supplied from the control unit 8, which also functions as a servo amplifier, to the servo motor 602 of the moving mechanism 60 during the escape cut is increased or decreased. The escape cut is a process in which the grinding wheel 614 slowly moves upward away from the wafer 90 after a spark out, which will be described later.

[0044] For example, in the grinding apparatus 1, when the processing element selected by the processing element selection unit 81 is a distance (so-called escape cut travel distance shown in FIG. 2 ) obtained by lowering the grinding mechanism 61 by the moving mechanism 60 to approach the holding surface 300 of the chuck table 30, processing the wafer 90 held on the holding surface 300, and then raising the grinding wheel 614 away from the wafer 90 held on the holding surface 300 by the moving mechanism 60, the grinding device 1 sets a third range (lower and upper limits) of the escape cut travel distance, which is a processing element, in the range setting unit 802, sets a third division number in the division number setting unit 804, and changes the third setting of the processing element setting unit 80 for the escape cut travel distance by values for each division including the lower limit and upper limit obtained by dividing the third range by the third division number. When the third setting is changed, the timing of increasing the operating signal supplied from the control unit 8 to the servo motor 602 of the moving mechanism 60 after the escape cut starts is changed.

[0045] For example, in the grinding device 1, when the processing element selected by the processing element selection unit 81 is the time for processing the wafer 90 with the grinding wheel 614 after the grinding mechanism 61 is stopped from descending toward the holding surface 300 of the chuck table 30 by the moving mechanism 60 and the wafer 90 held on the holding surface 300 has been processed a predetermined amount (in this embodiment, when the wafer 90 is thinned to reach the specified finishing thickness), the grinding device 1 sets a fourth range (lower limit value and upper limit value) of the spark-out execution time, which is the processing element, in the range setting unit 802, sets a fourth division number in the division number setting unit 804, and changes the fourth setting of the processing element setting unit 80 for the spark-out execution time for processing the wafer 90 with the grinding wheel 614 to values for each division including the lower limit value and the upper limit value obtained by dividing the fourth range by the fourth division number. When the fourth setting is changed, the timing at which the grinding mechanism 61 rises after the spark-out starts is changed. Spark-out is a process in which, after the wafer 90 has been thinned to a specified thickness, the Z-axis height of the grinding wheel 614 is fixed, no new cuts are made in the Z-axis direction, and elastic deflection is used to remove and smooth out any remaining material on the back surface 903, which is the surface to be ground, of the wafer 90.

[0046] For example, when the processing element selected by the processing element selection unit 81 is the rotational speed at which the table rotation mechanism 35 rotates the chuck table 30, the grinding device 1 sets a fifth range (lower limit and upper limit) of the rotational speed of the chuck table 30, which is the processing element, in the range setting unit 802, sets a fifth division number in the division number setting unit 804, and changes the fifth setting of the processing element setting unit 80 for the rotational speed of the chuck table 30 by values for each division including the lower limit and upper limit obtained by dividing the fifth range by the fifth division number. That is, the amount of the operating signal supplied from the control unit 8 to the motor 351 of the table rotation mechanism 35 increases or decreases.

[0047] For example, when the processing element selected by the processing element selection unit 81 is the rotational speed of the spindle 610 in the grinding mechanism 61, the grinding device 1 sets a sixth range (lower limit value and upper limit value) of the rotational speed of the spindle 610, which is the processing element, in the range setting unit 802, sets a sixth division number in the division number setting unit 804, and changes the sixth setting of the processing element setting unit 80 for the rotational speed of the spindle 610 with values for each division including the lower limit value and the upper limit value obtained by dividing the sixth range by the sixth division number. That is, the amount of the operating signal supplied from the control unit 8 to the motor 602 of the grinding mechanism 61 increases or decreases.

[0048] The grinding apparatus 1 includes, for example, a number setting unit 83 that sets the number of wafers 90 stored in the first cassette 157, or the number recognition unit 49 described above that recognizes the number of wafers 90 stored in the first cassette 157. The number setting unit 83 in this embodiment is incorporated into the control unit 8. For example, an operator can input the number of wafers 90 stored in the first cassette 157 to the number setting unit 83, which is configured as a recording medium such as a memory, using a touch panel (not shown) provided in the grinding apparatus 1.

[0049] The operation of the grinding apparatus 1 shown in FIG. 1 when grinding the wafer 90 held on the chuck table 30 will be described below. 1, one wafer 90 is stored on each shelf of the first cassette 157, and a total of 25 wafers 90 are stored in the first cassette 157. That is, the number of wafers 90 set in the number setting unit 83 is 25.

[0050] In this embodiment, the processing element selection unit 81 selects, for example, the Z-axis feed rate (first setting), which is one of the processing elements, from among the six processing elements set in the processing element setting unit 80. The processing element selected by the processing element selection unit 81 may be the escape cut movement rate shown in Fig. 2, or may select three of the Z-axis feed rate, the escape cut movement rate, and the escape cut movement distance, or may select all six processing elements.

[0051] The range setting unit 802 sets a range (first range) using a lower limit value and an upper limit value for the Z-axis feed rate, which is one of the machining elements selected by the machining element selecting unit 81. The first range is, for example, 0.3 μm / sec to 0.5 μm / sec as shown in FIG. 2, but is not limited to this numerical range.

[0052] 1 sets the number of divisions (first number of divisions) for equally dividing the first range of 0.3 μm / sec to 0.5 μm / sec to, for example, 2. Note that the number of divisions is not limited to 2. Then, the processing element setting unit 80 sets values for each division obtained by equally dividing the first range of 0.3 μm / sec to 0.5 μm / sec by the first number of divisions, 2. That is, one division is made between 0.3 μm / sec and 0.4 μm / sec, and another division is made between 0.4 μm / sec and 0.5 μm / sec, and the values for each division are as follows:

[0053] Furthermore, since the number of wafers set in the number setting unit 83 divided by 3 (the division number = 2 plus 1) is 25 ÷ 3 = 8.3 (i.e., 1 or more), the processing element setting unit 80 rounds down the decimal point of the divided number 8.3 to the nearest integer, i.e., for every eight wafers 90 described later, the processing element selected by the processing element selection unit 81, i.e., in this embodiment, the setting of the Z-axis feed speed, is changed to 0.3 μm / sec, 0.4 μm / sec, or 0.5 μm / sec.

[0054] First, the robot 40 pulls out the first wafer 90 from the first cassette 157 and moves the wafer 90 to the temporary placement area 152. Next, the alignment unit 153 centers the wafer 90 on the temporary placement area 152. In addition, the wafer ID of the wafer 90 is read by the wafer ID reading unit 159, and the read data is sent to the control unit 8 and stored for association with the processing elements in the grinding process of the first wafer 90.

[0055] The carry-in arm 41 holds the back surface 903 of the wafer 90 by suction and transports it onto the chuck table 30, where it is aligned so that the center of the holding surface 300 of the chuck table 30 and the center of the wafer 90 approximately coincide with each other. After the first wafer 90 is placed on the chuck table 30, a suction source (not shown) is activated, generating a suction force which is transmitted to the holding surface 300, causing the chuck table 30 to hold the wafer 90 by suction on the holding surface 300. Thereafter, the chuck table 30 holding the wafer 90 moves in the +Y direction to below the grinding mechanism 61. The grinding wheel 616 is then positioned so that the rotational path passes through the center of rotation of the wafer 90.

[0056] Next, to start grinding the wafers 90, the motor 612 rotates the spindle 610 at a predetermined rotational speed, and the grinding wheel 614 also rotates in accordance with this. In this embodiment, when the 25 wafers 90 in the first cassette 157 are sequentially ground, the processing element selecting unit 81 does not select the rotation speed of the spindle 610 (sixth setting) as a processing element that is set in the processing element setting unit 80 and that is to be changed in units of eight wafers 90. Therefore, when grinding each of the 25 wafers 90 initially stored in the first cassette 157, the rotational speed of the spindle 610 during grinding is not changed.

[0057] Next, the grinding mechanism 61 is lowered by the moving mechanism 60 at a predetermined Z-axis feed rate in the -Z direction so that the grinding wheel 614 approaches the holding surface 300. Specifically, as shown by the dashed line graph G1 in Fig. 3, the grinding mechanism 61, which is located at the origin height position Z0, is lowered at high speed. In addition, the height position of the grinding mechanism 61, which has started to descend from the origin height position Z0, is constantly tracked by the control unit 8 shown in Fig. 1. Then, as shown in graph G1, the grinding mechanism 61 reaches the air cut start position Z1. In graph G1, the horizontal axis represents the grinding time T, and the vertical axis represents the height position H of the grinding mechanism 61.

[0058] When the grinding mechanism 61 reaches the air-cutting start position Z1, the moving mechanism 60 performs air-cutting from the air-cutting start position Z1 until the grinding surface (lower surface) of the grinding wheel 616 contacts the rear surface 903 of the wafer 90 (air-cutting from time T1 to time T2 shown in graph G1 in FIG. 3), under the control of the control unit 8, so that the air-cutting feed rate is slower than the descent rate before reaching the air-cutting start position Z1 and is the same as the Z-axis feed rate during grinding (for example, 0.3 μm / sec). By performing air-cutting, the grinding wheel 614 does not plunge into the wafer 90 at a descent rate that would damage the wafer 90.

[0059] 1 comes into contact with the back surface 903 of the wafer 90, and grinding of the back surface 903 begins. As the chuck table 30 rotates at a predetermined rotation speed, the wafer 90 held on the holding surface 300 also rotates, and the grinding wheel 614 grinds the entire back surface 903 of the wafer 90. During the grinding process, grinding water is supplied to the contact area between the grinding stone 616 and the back surface 903 of the wafer 90 to cool and clean the contact area. In this embodiment, the processing element selecting unit 81 selects only the processing element, namely, the speed at which the grinding mechanism 61 is lowered, and therefore changes the first setting of the processing element setting unit 80 for every eight wafers 90 when grinding the 25 wafers 90 in the first cassette 157. Since the rotation speed of the chuck table 30 by the table rotation mechanism 35 (fifth setting) is not selected as a processing element, the rotation speed of the chuck table 30 during grinding is not changed by the processing element setting unit 80 when grinding each of the 25 wafers 90 initially stored in the first cassette 157. Furthermore, since the rotation speed of the spindle 610 is not selected as a processing element, the rotation speed of the spindle 610 is not changed.

[0060] While the thickness of the wafer 90 is successively measured by the thickness measuring gauge 38, the wafer 90 is ground to a finish thickness preset in the control unit 8 (grinding from time T2 to time T3 shown in graph G1), and the grinding mechanism 61 descends to height position Z3 shown in graph G1. Thereafter, a process known as spark-out is carried out.

[0061] During the spark-out from time T3 to time T4 shown in graph G1, the moving mechanism 60 stops approaching (lowering) the wafer 90 on the holding surface 300 of the grinding mechanism 61, and the height position of the grinding mechanism 61 is held at height position Z3, for example, for a predetermined time, while the rotating grinding wheel 614 removes any remaining grinding residue from the back surface 903 of the rotating wafer 90, smoothing the back surface 903. In this embodiment, when grinding the 25 wafers 90 in the first cassette 157, the processing element selection unit 81 does not select the spark-out execution time (fourth setting) described above as a processing element set in the processing element setting unit 80 to be changed for every eight wafers 90, so the spark-out execution time is not changed when grinding each of the 25 wafers 90 initially stored in the first cassette 157.

[0062] After the spark-out is performed, the moving mechanism 60 causes the grinding mechanism 61 to perform an escape cut (the escape cut from time T4 to time T5 shown in graph G1). During the escape cut, the grinding mechanism 61 slowly ascends at a predetermined ascending speed (the escape cut movement speed shown in FIG. 2) to suppress adverse effects on the back surface 903 of the wafer 90. Then, after the grinding mechanism 61 has performed the escape cut to a predetermined height position Z4, it ascends at high speed to the origin height position Z0. The distance from height position Z3 to height position Z4 is the escape cut movement distance. Here, in this embodiment, when grinding the 25 wafers 90 in the first cassette 157, the processing element selection unit 81 does not select the escape cut movement speed and escape cut movement distance as processing elements that are set in the processing element setting unit 80 and are changed in units of eight wafers 90, so the escape cut movement speed and escape cut movement distance are not changed when grinding each of the 25 wafers 90 that were initially stored in the first cassette 157.

[0063] Next, the chuck table 30, which holds the wafer 90 by suction after grinding, is moved in the -Y direction and positioned near the carry-out arm 42. The wafer 90 held by suction by the carry-out arm 42 is then transported to the spinner cleaning mechanism 156, where the back surface 903 of the wafer 90 is spin-cleaned, and the wafer 90 is then air-dried or spin-dried. Thereafter, the wafer 90 is carried into the second cassette 158 by the robot 40.

[0064] As described above, the first to eighth wafers 90 in the first cassette 157 are successively ground with the Z-axis feed rate, which is a processing element, set to 0.3 μm / sec. Next, when grinding of the ninth wafer 90 in the first cassette 157 begins, the Z-axis feed rate is changed from 0.3 μm / sec to 0.4 μm / sec by the processing element setting unit 80. Then, the ninth to sixteenth wafers 90 are ground with the Z-axis feed rate, which is a processing element, set to 0.4 μm / sec.

[0065] Because the Z-axis feed rate was changed from 0.3 μm / sec to 0.4 μm / sec, as shown in the dashed-dotted line graph G2 in FIG. 3 , which represents the grinding of the ninth to sixteenth wafers 90, the time T61 from the start of air cutting to grinding the wafers 90 to the finishing thickness is shorter than the time from the start of air cutting to grinding the wafers 90 to the finishing thickness, which is shown in graph G1, which represents the grinding of the first to eighth wafers 90.

[0066] The ninth to sixteenth wafers 90 in the first cassette 157 are successively ground with the Z-axis feed speed, which is a processing element, set to 0.4 μm / sec. Then, when grinding of the seventeenth wafer 90 in the first cassette 157 begins, the Z-axis feed speed is changed from 0.4 μm / sec to 0.5 μm / sec by the processing element setting unit 80. Then, the seventeenth to twenty-fourth wafers 90 are ground with the Z-axis feed speed, which is a processing element, set to 0.5 μm / sec.

[0067] As shown in the solid line graph G3 representing the grinding of the 17th to 24th wafers 90, the time T62 from the start of air cutting to grinding the wafers 90 to the finished thickness is shorter than the time from the start of air cutting to grinding the wafers 90 to the finished thickness shown in graph G2 representing the grinding of the 9th to 16th wafers 90.

[0068] For example, the above-described grinding process is performed successively on the plurality of wafers 90 stored in the first cassette 157 one by one, and the Z-axis feed speed, which is a processing element, is changed in three stages by the processing element setting unit 80 every time eight wafers 90 are ground. Then, consider a case where the number of wafers 90 stored in the first cassette 157 decreases, and the number of wafers 90 remaining in the first cassette 157 recognized by the wafer number recognition unit 49, which can operate together with the robot 40 that carries out the wafers 90 from the first cassette 157, becomes, for example, two wafers.

[0069] The grinding apparatus 1 in this embodiment includes a notification unit 19 that notifies, for example, an operator of a request for wafers 90 when, for example, the number of wafers 90 stored in the first cassette 157 is two and the number of wafers 90 (2) recognized by the number recognition unit 49 divided by the predetermined division number (2) plus 1 (3) is less than 1. For example, if the number of wafers 90 in the first cassette 157 recognized by the number recognition unit 49 is two and the division number set by the division number setting unit 804 is 2 as in this embodiment, the division number calculated by the processing element setting unit 80 is 2 / 3, which is less than 1. In other words, at least three unprocessed wafers 90 are required in the first cassette 157. It should be noted that even if the first cassette 157 contains, for example, 25 wafers 90, it is possible to set the processing element settings to be changed every time one wafer 90 is ground. It is also possible to set the processing element settings to be changed every time two wafers 90 are ground. In other words, it is possible to set the number of wafers 90 to be ground for which the processing element settings are changed.

[0070] The notification unit 19 may, for example, display on a monitor (not shown) a message to place a new first cassette 157 containing a plurality of unprocessed wafers 90 on the first cassette stage 150, or may issue a warning from a speaker (not shown) to place a new first cassette 157 containing a plurality of unprocessed wafers 90 on the first cassette stage 150. In addition, when the wafers 90 stored in the first cassette 157 are transported to each of the multiple grinding machines 1 using, for example, an OHT (Overhead Hoist Transport) arranged above multiple grinding machines 1 arranged side by side, an AGV (Automated Guided Vehicle), or an RGV (Rail Guided Vehicle) arranged between each grinding machine 1, the notification unit 19 may send information to the OHT or the like requesting the transport of the first cassette 157 containing multiple unprocessed wafers 90.

[0071] As described above, the processing apparatus 1 (grinding apparatus 1) according to the present invention stores a plurality of wafers 90 (e.g., 25 wafers) in the first cassette 157, and sets the range (first range) of an arbitrary processing element (in the above embodiment, the Z-axis feed rate) selected by the processing element selection unit 81 using the range setting unit 802. Then, the division number setting unit 804 equally divides the Z-axis feed rate, which is the processing element of the set range, into a predetermined division number (e.g., 2), and switches the Z-axis feed rate, which is the processing element set in the processing element setting unit 80, for every eight wafers to process them. Therefore, even in an unmanned operation, it is possible to process, for example, every eight wafers at three stages of Z-axis feed rate. For example, when determining the conditions for the Z-axis feed rate (finding an appropriate Z-axis feed rate), the operator does not need to change the Z-axis feed rate, which reduces the burden on the operator.

[0072] The processing apparatus 1 (grinding apparatus 1) according to the present invention is not limited to the above embodiment, and may be embodied in various different forms within the scope of its technical concept. Furthermore, the process of grinding the wafer 90 using the grinding apparatus 1 can also be modified as appropriate within the scope of the effects of the present invention.

[0073] For example, we will explain a case where the processing element selection unit 81 selects the processing elements spark out execution time (fourth setting), escape cut movement speed (second setting), and escape cut movement distance (third setting) in addition to the Z-axis feed speed (first setting) described above from the six processing elements shown in Figure 2 set in the processing element setting unit 80.

[0074] The range setting unit 802 sets a first range of 0.3 μm / sec to 0.5 μm / sec for the Z-axis feed rate, which is the machining element selected by the machining element selection unit 81, as shown in FIG. 2, as described above, and the division number setting unit 804 equally divides the first range by a division number of 2, and sets the values for each division as a lower limit of 0.3 μm / sec, 0.4 μm / sec, and an upper limit of 0.5 μm / sec. Similarly, the range setting unit 802 sets a fourth range of 0.5 sec to 3 sec for the spark-out execution time, which is the selected machining element, as shown in FIG. 2, and the division number setting unit 804 equally divides the fourth range by a division number of 2, and sets the values for each division as a lower limit of 0.5 sec, 1.75 sec, and an upper limit of 3 sec. Note that the range setting of the spark-out execution time performed by the range setting unit 802 may be set by the number of rotations of the chuck table 30 shown in FIG. 1. That is, for example, 1 rotation to 5 rotations may be set as the fourth range, and the division number setting unit 804 may equally divide the fourth range by the division number of 2 and set the values for each division as 1 rotation, 3 rotations, and 5 rotations. In this case, for example, when grinding the first to eighth wafers 90, the spark out execution time is the time it takes for the chuck table 30 to make one rotation.

[0075] Similarly, the range setting unit 802 sets a second range of 0.05 μm / sec to 1.0 μm / sec for the escape cut movement speed, which is the selected processing element, as shown in Fig. 2, and the division number setting unit 804 divides the second range equally by the division number of 2 and sets the values for each division to 0.05 μm / sec, 0.525 μm / sec, and 1.0 μm / sec. Furthermore, the range setting unit 802 sets a third range of 1.0 μm to 3.0 μm for the escape cut movement distance, which is the selected processing element, as shown in Fig. 2, and the division number setting unit 804 divides the third range equally by the division number of 2 and sets the values for each division to 1.0 μm, 2.0 μm, and 3.0 μm.

[0076] In this way, the four processing elements, namely, the Z-axis feed rate, the spark-out execution time, the escape cut movement rate, and the escape cut movement distance, selected from the processing elements set in the processing element setting unit 80 may be combined, and the four processing elements may be switched to the values for each interval after grinding of eight wafers 90 is completed, to perform the grinding process. For example, the Z-axis feed rate, spark-out time, escape cut movement rate, and escape cut movement distance are changed to, for example, 0.3 μm / sec, 0.5 sec, 0.05 μm / sec, and 1.0 μm when grinding the first to eighth wafers 90; to, for example, 0.4 μm / sec, 1.75 sec, 0.525 μm / sec, and 2.0 μm when grinding the ninth to sixteenth wafers 90; and to, for example, 0.5 μm / sec, 3 sec, 1.0 μm / sec, and 3.0 μm when grinding the seventeenth to twenty-fourth wafers 90. That is, in the above embodiment, four processing elements are used, and each processing element has three different settings (values for each division), so that grinding experiments for 81 types of wafers 90 can be performed by combining them. [Explanation of symbols]

[0077] 1: Grinding device (processing device) 10: Base 100: Column 150: First cassette stage 151: Second cassette stage 152: Temporary placement area 153: Alignment unit 156: Spinner cleaning mechanism 157: First cassette 158: Second cassette 19: Notification Department 30: Chuck table 300: Holding surface 35: Table rotation mechanism 350: Spindle 351: Motor 353: Encoder 37: Table feed mechanism 38: Thickness measurement gauge 4: Transport mechanism 40: Robot 400: Robot hand 401: Articulated arm 41: Loading arm 42: Loading arm 49: Number recognition unit 490: Light emitting unit 491: Light receiving unit 60: Moving mechanism 600: Ball screw 602: Motor 604: Encoder 61: Grinding mechanism 610: Spindle 612: Motor 614: Grinding wheel 8: Control unit 80: Machining element setting unit 802: Range setting unit 804: Division number setting unit 81: Processing element selection section 83: Number setting section 90: Wafer 900: Front surface of wafer 903: Back surface of wafer

Claims

1. A processing apparatus comprising: a chuck table that holds a wafer on a holding surface; a processing mechanism that has a processing tool attached to the tip of a spindle and rotates the spindle to process the wafer held on the holding surface; a movement mechanism that moves the processing mechanism in a direction perpendicular to the holding surface; a processing element setting unit that stores a plurality of processing conditions for wafer processing; a cassette stage that places a cassette containing a plurality of wafers thereon; a transport mechanism that transports wafers between the cassette and the holding surface; and a control unit that controls the entire apparatus, a processing element selection unit that selects an arbitrary processing condition selected by an input by an operator from a plurality of processing conditions stored in the processing element setting unit; The processing element setting unit includes a range setting unit that sets a range by a lower limit value and an upper limit value input by an operator for one processing condition selected by the processing element selecting unit, and a division number setting unit that sets a division number input by the operator to divide the range, The control unit changes the range to a value for each division including the lower limit value and the upper limit value obtained by dividing the range by the division number, and changes the setting of the selected one processing condition to process each wafer.

2. A wafer count setting unit that sets the number of wafers stored in the cassette input by an operator, or a wafer count recognition unit that recognizes the number of wafers stored in the cassette, 2. The processing device according to claim 1, wherein when the number set in the number setting unit or the number recognized by the number recognition unit divided by the division number plus 1 is 1 or greater, the processing element setting unit changes the settings of the selected processing conditions for each integer obtained by rounding down the decimal point of the divided number and processes the wafers.

3. 3. The processing apparatus according to claim 2, further comprising a notification unit that notifies a wafer request when the divisor calculated by the processing element setting unit is less than 1.

4. A processing device as described in claim 1, claim 2, or claim 3, wherein a first range of the speed at which the processing mechanism approaches the holding surface by the moving mechanism is set in the range setting unit, a first division number is set in the division number setting unit, and a first setting for the speed at which the processing mechanism approaches the holding surface is changed using values for each division obtained by dividing the first range by the first division number.

5. 5. The processing device according to claim 1, 2, 3, or 4, wherein after the moving mechanism moves the processing mechanism closer to the holding surface and processes the wafer held on the holding surface, a second range of speed at which the moving mechanism moves the processing tool away from the wafer held on the holding surface is set in the range setting unit, a second division number is set in the division number setting unit, and the second setting for the speed at which the processing tool is moved away from the wafer held on the holding surface is changed by values for each division obtained by dividing the second range by the second division number.

6. A processing device as described in claim 1, claim 2, claim 3, claim 4, or claim 5, wherein after the moving mechanism moves the processing mechanism closer to the holding surface and processes the wafer held on the holding surface, a third range of distance for moving the processing tool away from the wafer held on the holding surface by the moving mechanism is set in the range setting unit, a third division number is set in the division number setting unit, and the third setting for the distance for moving the processing tool away from the wafer held on the holding surface is changed by values for each division obtained by dividing the third range by the third division number.

7. 7. The processing device according to claim 1, wherein the moving mechanism brings the processing mechanism closer to the holding surface, stops the approach of the processing mechanism after processing a predetermined amount of the wafer held on the holding surface, sets a fourth range of time for processing the wafer with the processing tool after the approach is stopped in the range setting unit, sets a fourth division number in the division number setting unit, and changes the fourth setting for the time for processing the wafer with the processing tool after the approach is stopped by values for each division obtained by dividing the fourth range by the fourth division number.

8. 8. The machining apparatus according to claim 1, further comprising: a table rotation mechanism that rotates the chuck table; a fifth range of the rotation speed of the chuck table is set in the range setting unit; a fifth division number is set in the division number setting unit; and a fifth setting for the rotation speed of the chuck table is changed using values for each division obtained by dividing the fifth range by the fifth division number.

9. 9. The machining device according to claim 1, wherein a sixth range of the rotational speed of the spindle is set in the range setting unit, a sixth division number is set in the division number setting unit, and the sixth setting for the rotational speed of the spindle is changed by values for each division obtained by dividing the sixth range by the sixth division number.

10. A first range of speed at which the moving mechanism approaches the processing mechanism to the holding surface is set in the range setting unit, a first division number is set in the division number setting unit, and a first setting for the speed at which the processing mechanism approaches the holding surface is changed using values for each division obtained by dividing the first range by the first division number; the processing mechanism is moved closer to the holding surface by the moving mechanism, and after processing the wafer held on the holding surface, a second range of speed for moving the processing tool away from the wafer held on the holding surface by the moving mechanism is set in the range setting unit, a second division number is set in the division number setting unit, and the second setting for the speed for moving the processing tool away from the wafer held on the holding surface is changed by values for each division obtained by dividing the second range by the second division number; the processing mechanism is moved closer to the holding surface by the moving mechanism, and after processing the wafer held on the holding surface, a third range of distance for moving the processing tool away from the wafer held on the holding surface by the moving mechanism is set in the range setting unit, a third division number is set in the division number setting unit, and the third setting for the distance for moving the processing tool away from the wafer held on the holding surface is changed by values for each division obtained by dividing the third range by the third division number; the moving mechanism moves the processing mechanism closer to the holding surface, and when a predetermined amount of the wafer held on the holding surface has been processed, the processing mechanism stops the approach; a fourth range of time for processing the wafer with the processing tool after the approach has been stopped is set in the range setting unit; a fourth division number is set in the division number setting unit; and a fourth setting for time for processing the wafer with the processing tool after the approach has been stopped is changed using values for each division obtained by dividing the fourth range by the fourth division number; a table rotation mechanism that rotates the chuck table, wherein a fifth range of the rotation speed of the chuck table is set in the range setting unit, a fifth division number is set in the division number setting unit, and a fifth setting of the rotation speed of the chuck table is changed using values for each division obtained by dividing the fifth range by the fifth division number; A sixth range of the rotation speed of the spindle is set in the range setting unit, a sixth division number is set in the division number setting unit, and the sixth setting of the rotation speed of the spindle is changed by a value for each division obtained by dividing the sixth range by the sixth division number. The processing device according to claim 1, claim 2, or claim 3.

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